TW515024B

TW515024B - Wafer sucking device

Info

Publication number: TW515024B
Application number: TW90130332A
Authority: TW
Inventors: David Hsieh
Original assignee: Taiwan Semiconductor Mfg
Priority date: 2001-12-07
Filing date: 2001-12-07
Publication date: 2002-12-21

Abstract

A wafer-sucking device comprises: (1) an isolation ring has a first round opening and a second groove surrounding the said first round opening. (2) An electrostatic chuck has a first base, a placing plane opposite to the said base and a declined outer peri-plane that declines and expands from the placing plane to the base. The said base is put in the first round opening of the said isolation ring. The said placing plane area is smaller than that of the wafer and is used to place the wafer. (3) An insertion ring that has an end plane and inner peri-plane is put in the said second groove. The end plane is exposed. The inner peri-plane corresponds to the said declined outer peri-plane and combines with the said electrostatic chuck. There is a fixed spacing between the said end plane and the placing plane of the said electrostatic chuck. Via the tight combination of the electrostatic chuck and the insertion ring, the electrostatic chuck clean time is shortened and the uniformity of the wafer dry etching is increased.

Description

515024 五、發明說明（1) 餘刻ίΓΓ系有關於一種晶圓吸附裝4，特別有關於電漿中，半導體晶片能與上述***環充分地密合會造成晶圓餘刻不均句的情；兄，並減短靜電汉庄之h洗時間及加大清洗週期，減少時能之晶圓吸附裝置。才η成本，增加產電襞製程設備在半導體製程中是一個非常普遍使用的 '通《是用於化學氣象沉積製程或是乾蝕刻製程等。 ^般的電㈣程設備中，半導體晶片是放置於一靜及座上而進行電漿製程。直=閱第1圖，第1圖為習知的真空艙之簡易***圖。 =艙Η的前端有-個開口12，作為半導體晶片的入口。 321罟8Ϊ在一個真空搶1〇中的基座“上。且於上述基及隔H閱第2圖’第2圖為習知電聚設備之陶究靜電吸座組件之剖面圖。晶圓20係放置於一super_E陶瓷了吸座(Ceramic electr〇static chunk，E —以⑽㈧ Μ 之豆且隔組裱組件2 4係放置於上述靜電吸座及基座丨4， Ϊ導二I =止電漿侵#上述靜電吸座18及基座14中沒有被 ^日日片20遮蔽之部分，所以上述靜電吸座18及基座14 路的部分便必須用上述隔絕環組件24蓋住。上述隔絕 I、必須旎抗侵蝕，於上述設備中之隔絕環組件24具有一核22及一外隔絕環16所組成，一般來說上述外隔絕 ==以石英所構成，上述内隔絕環22，—般來說是以石夕斤構成’並且上述内隔絕環22之内周面221，與上述515024 V. Description of the invention (1) In the last moment, ΓΓ is related to a wafer suction package 4, especially about the plasma, the semiconductor wafer can be fully adhered to the insertion ring, which will cause the wafer to be uneven. Brother, and shorten the h washing time of electrostatic Hanzhuang and increase the cleaning cycle, reduce the wafer adsorption device when the energy can be reduced. In order to increase the cost, it is a very common process equipment to increase the production of electricity. In the semiconductor process, it is commonly used in chemical meteorological deposition processes or dry etching processes. In a typical electric process equipment, the semiconductor wafer is placed on a stand and a base to perform a plasma process. Straight = read Figure 1, Figure 1 is a simplified explosion diagram of the conventional vacuum chamber. = There is an opening 12 at the front end of the hatch, which serves as the entrance to the semiconductor wafer. 321 罟 8Ϊ on a base "in a vacuum grab 10". And see the figure 2 'on the above base and the second figure. The second figure is a cross-sectional view of a conventional electrostatic chuck assembly of a conventional electropolymerization device. Wafer 20 series placed on a super_E ceramic suction block (Ceramic electr0 static chunk, E — with 之且 beans and interval mounting components 2 4 series placed on the above-mentioned electrostatic suction base and base Plasma invasion #The above-mentioned electrostatic suction seat 18 and the base 14 are not covered by the Japanese-Japanese film 20, so the electrostatic suction seat 18 and the base 14 must be covered by the above-mentioned isolation ring assembly 24. The above Insulation I must be resistant to erosion. The insulation ring assembly 24 in the above equipment is composed of a core 22 and an outer insulation ring 16. Generally speaking, the above outer insulation == is composed of quartz, and the above inner insulation ring 22,- Generally speaking, it is composed of Shi Xijin ', and the inner peripheral surface 221 of the inner insulation ring 22 is the same as the above.

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==:;:r_係互相平行…直上述外隔絕接著參閱第3圖，為上述内隔絕環22及上述靜電吸座 8之剖面圖，由於上述内隔絕環22及上述靜電吸座“之上表面間之間距dl及d3，和上述内隔絕環22之内徑及上述靜 =吸座18之外徑的間距d2及d4，可能會因為組裝問種不同的因素，造成dl不等於d3，或是d2不等於义個情形將產生以下的情況。 …、請參照第4及第5圖，第4圖為一晶圓20置於上述内隔及上述靜電吸座18之剖面圖，第5圖為一靜電吸 8置=上述内、外隔絕環22、16中之上視圖。由於上述内 '絕裱22及上述靜電吸座18之上表面間之間距以及心，和力内隔絕環22之内徑及上述靜電吸座18之外徑的間距心 :“的不一致’將使得電漿製程中，蝕刻副產品以容易進上述靜電吸座18與内隔絕環22之接面中，且吸附於其上冷：=rj產品2曰6將容易導致以氦氣於晶圓背部散熱 / 佳所以曰曰圓之蝕刻就會因為晶圓溫度之不一，(backside heliuin)，產生晶圓银刻的均勻性 -需=期地清洗上述靜電吸座，造成時間成本的浪費。艮康上述目的，本發明係提供一種晶圓吸附裝置，用及環繞上述第一=開具有：第-圓型開口’以古^ ^ 開口之一第二凹槽；一靜電吸座，且有一第一底座、相對於上沭麻袖嬰二八外因品，於丄乂如一.边底座之一放置面，以及一傾斜上述底座係設外周面’係由放置面向上述底座擴大傾斜==:;: r_ are parallel to each other ... Straight to the above external isolation and then refer to FIG. 3, which are cross-sectional views of the above-mentioned internal insulation ring 22 and the above-mentioned electrostatic suction seat 8. The distances d1 and d3 between the upper surfaces, and the distances d2 and d4 between the inner diameter of the inner insulation ring 22 and the outer diameter of the static = suction seat 18 may be caused by different factors in the assembly, causing dl not to be equal to d3. Or if d2 is not equal to the above case, the following situations will occur.…, Please refer to Figs. 4 and 5, which is a cross-sectional view of a wafer 20 placed on the inner compartment and the electrostatic suction seat 18. The picture shows an electrostatic suction 8 set = the upper view of the above inner and outer insulation rings 22, 16. Because of the distance between the inner surface of the inner insulation board 22 and the above electrostatic suction seat 18 and the center, and the inner insulation ring 22 The internal diameter of the inner diameter and the outer diameter of the electrostatic suction seat 18: "the inconsistency" will make the by-products in the plasma process easy to etch into the interface between the electrostatic suction seat 18 and the inner insulation ring 22, and adsorb on On the cold: = rj product 2 to 6 will easily lead to heat dissipation with helium on the back of the wafer Etching the wafer will vary because of the temperature, (backside heliuin), uniformity of the wafer to produce a silver engraved - = required cleaning of the electrostatic suction seats, resulting in a waste of time cost. For the above purpose of the invention, the present invention provides a wafer adsorption device, which is used to surround the first first opening, and has: a second groove with a first opening of the first round shape; an electrostatic suction seat; and an electrostatic suction seat. The first base, relative to the upper ramie sleeve baby, two or eight external factors, is placed on one of the side bases, and one of the bases is tilted. The base is provided with an outer peripheral surface.

515024515024

置於上述隔絕環之第一圓型開口中，上述放置曰曰Q之表面積’用以放置上述晶圓；一***環，且有一端面以及一内周面，上述***環設置於上述第:凹槽中盥匕出上述端面，上述内周面係對應上述傾斜外“而 /、上迹带電吸座契合，且上述端面與上述靜電吸座之面有一既定落差。置四透過本發明之吸附裝置，因為上述靜電吸座及上述插入環可以更緊密地結合，所以於電漿蝕刻製程中，半導體晶片能與上述***環充分地密合，使蝕刻副產品不會輕易地進入上述靜電吸座及上述***環間的接面，因此戶^ ^成之晶圓餘刻不均勻的情況可以大大地改善。此外，也因此靜電吸座之清洗時間可減短，且真空艙的清洗週期可加大 ’減少時間成本，增加產能。It is placed in the first circular opening of the above-mentioned isolation ring, and the above-mentioned surface area of Q is used to place the above-mentioned wafer; an insertion ring, and an end surface and an inner peripheral surface, the insertion ring is arranged at the first: concave The above-mentioned end surface is formed in the tank, the above-mentioned inner peripheral surface corresponds to the above-mentioned inclined outer side, and / or the upper track electric suction seat fits, and there is a predetermined gap between the above-mentioned end surface and the surface of the electrostatic suction seat. Device, because the electrostatic chuck and the insertion ring can be more tightly combined, during the plasma etching process, the semiconductor wafer can be fully adhered to the insertion ring, so that etching by-products will not easily enter the electrostatic chuck and The interface between the inserted rings can greatly improve the unevenness of the wafers. In addition, the cleaning time of the electrostatic suction seat can be shortened, and the cleaning cycle of the vacuum chamber can be increased. 'Reduce time costs and increase production capacity.

此外’本發明的特色及優點將於以下描述中提出，因此，部分將出現於描述中，或透過實施本發明而學得。本發明的目的及其他優點，將透過其描述、專利申請範圍及所附圖示中所仔細指之的結構及方法而了解、獲得。圖式簡單說明 X 第1圖為習知的真空擒之簡易***圖。第2圖為習知電漿設備之陶瓷靜電吸座及其隔絕環組件之剖面圖。 ' 第3圖為第2圖中上述内隔絕環及靜電吸座之剖面示音圖。〜第4圖為第2圖中上述晶圓置於上述内隔絕環及靜電吸In addition, the features and advantages of the present invention will be presented in the following description. Therefore, some of them will appear in the description or be learned through the implementation of the present invention. The purpose and other advantages of the present invention will be understood and obtained through the description, the scope of the patent application, and the structures and methods carefully referred to in the accompanying drawings. Brief description of the drawing X Figure 1 is a simplified explosion diagram of the conventional vacuum trap. Fig. 2 is a cross-sectional view of a ceramic electrostatic susceptor and a spacer ring assembly of a conventional plasma device. 'Figure 3 is a cross-sectional sound diagram of the above-mentioned inner insulation ring and electrostatic suction seat in Figure 2. ~ Figure 4 shows the above wafer placed in the inner insulation ring and electrostatic attraction in Figure 2.

0503-6793TW1 ；TSMC2001-0670;dennis .ptc 第 6 頁之剖面示意圖。，5圖為第2圖中上述之上視圖。电及座置於上述内、外隔絕環第6圖為本發明曰第7圖為第6圖中上曰曰i/:及附裝置之剖面圖。部分剖面圖。· 述#電吸座118及上述***環112之 [符號說明] 1 0〜真空艙； 1 2〜開口· 1 4〜基座； 1 η ， 1 〇 1 1 6〜外隔絕環； 2 4〜隔絕環組件 11 6〜隔絕環； 161〜上端面； 11 62〜第二凹槽 1182〜放置面；、-18〜靜電吸座；2〇、12〇晶圓； 2 2〜内隔絕環； 11 2〜***環； 1161〜第一開口； 11 81〜底座； 11 8 3〜傾斜外周面； 1122〜内周面。匕 4 〜. ^ 1121〜端面；貫施例附^先請參考第6圖及第7圖，第6圖為本發明之晶圓吸 11 _之剖面圖，本發明之晶圓吸附裝置包括一靜電吸座、。―隔絕環116以及一***環112。第7圖為第6圖中上 f電吸座11 8及上述***環丨1 2之部分剖面圖。繞上述隔絕環11 6，具有一第一圓型開口 11 61，以及環、、凡上述第一圓型開口 1161之一第二凹槽1162。第底座1181、相對於上述上述靜電吸座118具有0503-6793TW1; TSMC2001-0670; dennis .ptc Sectional schematic on page 6. Figure 5 is the above top view of Figure 2. The electricity and the seat are placed on the inner and outer isolation rings. Fig. 6 is a cross-sectional view of the present invention. Partial sectional view. · ## Electric suction seat 118 and the above-mentioned insertion ring 112 [Symbol description] 1 0 ~ vacuum chamber; 1 2 ~ opening; 1 4 ~ base; 1 η, 1 〇1 16 ~ outer insulation ring; 2 4 ~ Isolation ring assembly 11 6 ~ Isolation ring; 161 ~ Upper end face; 11 62 ~ Second groove 1182 ~ Placement surface; -18 ~ Electrostatic suction seat; 20, 120 wafers; 2 2 ~ Inner insulation ring; 11 2 ~ insertion ring; 1161 ~ first opening; 11 81 ~ base; 11 8 3 ~ inclined outer peripheral surface; 1122 ~ inner peripheral surface. ^ 4121. End surface; Example attached ^ Please refer to Figures 6 and 7 first. Figure 6 is a cross-sectional view of the wafer suction 11 _ of the present invention. The wafer suction device of the present invention includes a Static suction seat ,. ―Isolating ring 116 and an insertion ring 112. FIG. 7 is a partial cross-sectional view of the upper f electric suction base 11 8 and the above-mentioned insertion ring 12 in FIG. 6. Around the above-mentioned isolation ring 116, there is a first circular opening 1161, and a ring and a second groove 1162, which is one of the first circular openings 1161. The first base 1181 has

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底座1181之一放置面1182，以及一傾斜外周面1183，係由放置面1 182向上述底座Π81擴大傾斜，上述底座1181係# 置於上述隔絕環116之第一圓型開口1161中，上述放置面& 11 8 2係小於一晶圓1 2 〇之表面積，用以放置上述晶圓丨2 〇。另外，上述***環112具有一端面1121以及一内周面 1122，上述***環112設置於上述第二凹槽丨162中，且露出上述端面1121，上述内周面1122係對應上述傾斜外周面 1183而與上述靜電吸座118契合，且上述端面1121與上述靜電吸座之放置面1182有一既定落差dl 3。One of the placement surfaces 1182 of the base 1181, and an inclined outer peripheral surface 1183, are enlarged and inclined from the placement surface 1 182 to the base Π81. The base 1181 series is placed in the first round opening 1161 of the isolation ring 116. The surface & 11 8 2 is a surface area smaller than 1 2 0 of a wafer, and is used to place the above wafer 2 0 2. In addition, the insertion ring 112 has an end surface 1121 and an inner peripheral surface 1122. The insertion ring 112 is disposed in the second groove 162 and exposes the end surface 1121. The inner peripheral surface 1122 corresponds to the inclined outer peripheral surface 1183. It fits with the electrostatic suction seat 118, and the end surface 1121 and the placement surface 1182 of the electrostatic suction seat have a predetermined drop dl3.

此外，上述靜電吸118座係為—super_E陶瓷靜電吸座 (ceramic electrostatic chunk，E-chunk)，舉例來說為In addition, the aforementioned electrostatic suction 118 seat is-super_E ceramic electrostatic chunk (E-chunk), for example,

氮化鋁材料所構成，亦或可為含鎢？或錳M〇、碳化鈦Tic、氮化鈦TiN之化合物，且其上具有複數個小圓凸點，用以於蝕刻進行時，根據一直流電壓而於靜電吸座118表面產生Johnsen-Renbeck Force以握持住晶圓，且上述靜電吸座11 8中更具有氣體流路及一液體流路，分別供以氦氣及冷卻水，用以對因蝕刻而變熱之晶圓，提供降溫的冷卻效果。而上述隔絕環116及***環112，舉例來說，係分別由石英（quartz)及矽化物所構成，其中上述靜電吸座ιΐ8更 :包括一凸緣，設置於上述底座下方，用以承接上述隔絕其中本發明吸附裝置的設計重點有：上述傾斜外周面1183由放置面1182向大傾斜’且上述内周面11 22係對應上述傾上述底座1181擴斜外周面11 8 3而Made of aluminum nitride, or can it be tungsten-containing? Or a compound of manganese M0, titanium carbide Tic, titanium nitride TiN, and has a plurality of small round bumps, which are used to generate a Johnsen-Renbeck Force on the surface of the electrostatic susceptor 118 according to the DC voltage during the etching process. The wafer is held by holding, and the electrostatic suction seat 118 further has a gas flow path and a liquid flow path, which are respectively provided with helium gas and cooling water to provide a temperature-reduced wafer that is heated by etching. Cooling effect. The above-mentioned isolation ring 116 and insertion ring 112 are, for example, composed of quartz and silicide, among which the electrostatic suction seat 8 includes a flange, which is arranged below the base to receive the above. The design focus of the adsorption device of the present invention is as follows: The inclined outer peripheral surface 1183 is inclined greatly from the placement surface 1182, and the inner peripheral surface 11 22 corresponds to the inclined outer peripheral surface 11 8 3 which is inclined to the base 1181.

與^述及座"8契☆，舉例來說，上述傾斜係為依據厂2至1〇〇,間的斜率，而最好為5至2〇。並且上述端面〃上述烀電吸座之放置面11 82具有之上述既定落差川，大約為um毫米，最好為〇〇5至〇·3。如-此，插入ί哀Π 2於進行蝕刻時可與上述靜電吸座緊密地契合，使钱刻副產品不會輕易地進入上述靜電吸座及上述*** 的接面。透過本發明之晶圓吸附裝置，藉由靜電吸座及***環依據一斜率，互相對應地緊密結合，因而可以大大地改善蝕刻副產品容易進入上述靜電吸座與***環之接面中且二附於靜電吸座上，又上述蝕刻副產品將容易導致以氦氣於晶圓背部散熱冷卻效果不佳，所以晶圓之蝕刻就會因為晶圓溫度之不一致（backside he 1 ium)，產生晶圓蝕刻的均勻性降低，提高良率。此外，也因此靜電吸座之清洗時間可減短，且清洗週期可加大，減少時間成本，增加產 /王月匕° 雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。With reference to 及 8 契 ☆, for example, the above-mentioned inclination is based on a slope between 2 and 100, and preferably 5 to 20. In addition, the above-mentioned end surface 〃 the above-mentioned electric suction base placement surface 11 82 has the above-mentioned predetermined drop distance, which is about um millimeter, and preferably from 0.05 to 0.3. If this is the case, the insertion insert 2 can be closely fitted with the above-mentioned electrostatic suction seat during the etching, so that the by-products of money carving will not easily enter the above-mentioned electrostatic suction seat and the inserted interface. Through the wafer adsorption device of the present invention, the electrostatic suction seat and the insertion ring are closely coupled to each other according to a slope, so that the etching by-products can be greatly improved and easily enter the interface between the electrostatic suction seat and the insertion ring. On the electrostatic suction seat, the above-mentioned etching by-products will easily lead to poor cooling and cooling effect of the back of the wafer with helium gas, so the wafer etching will cause wafer etching due to the inconsistent wafer temperature (backside he 1 ium). The uniformity is reduced and the yield is improved. In addition, the cleaning time of the electrostatic suction seat can be shortened, and the cleaning cycle can be increased, reducing the time cost, and increasing the production rate. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Anyone who is familiar with this technique can make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the scope of the attached patent application.

0503-6793TWF » TSMC2001 »0670 ； dennis.ptd0503-6793TWF »TSMC2001» 0670; dennis.ptd

Claims

w月Xr畛一； w月Xr畛一；曰 -fa; I —種晶圓吸附裝置，用以吸一隔絕環，呈右一钕 m , 日日圓，包括·· 圓型開口之-第1凹槽；一”開口 ’以及環繞上述第- 月夢電吸座，且有一繁危贪放置面，以及_傾斜：周工=、相對於上述底座之一傾斜，上述底座俜^ f ^ 放置面向上述底座擴大二迷放置面’係小於上述晶圓之表=弟：圓型開口中’ ® ;以及 ^ ^ 用以放置上述晶置於上ϊΐΉ一端面以及一内周面’上述***環設上述靜雷:广述靜電吸座契合，且上述端面與砍静電及座之放置面有一既定落差。、、2]如申請專利範圍第1項所述之晶圓吸附裝置，其中上述靜電吸座更包括一凸緣，設置於上述底座下方。 3.如申凊專利範圍第1項所述之晶圓吸附裝置，其中上述放置面向上述底座擴大傾斜係具有一斜率範圍為2至 100 〇 4 ·如申請專利範圍第3項所述之晶圓吸附裝置，其中上述放置面向上述底座擴大傾斜係具有一斜率範圍為5至 20 〇 5·如申請專利範圍第1項所述之晶圓吸附裝置，其中上述端面與上述靜電吸座之放f面之既定落差在〇· 01至1 毫米之間 6 ·如申請專利範圍第4頊所 ^述端面與上述靜電吸座之·' t g无定落差在0. 05至0 述之晶圓吸附裝置，其中农篆面 I1M 0503-6793TWF1；TSMC2001 -0670;denn i s.p t c 第 l〇 t 515024w 月 Xr 畛一; w 月 Xr 畛一; ； -fa; I — a kind of wafer adsorption device for sucking an isolation ring, which is right-neodymium m, Japanese yen, including ... A groove; an "opening" and surrounding the first-month dream electric suction seat, and there is a cumbersome placement surface, and _ tilt: Zhou Gong =, inclined relative to one of the above bases, the above base 俜 ^ f ^ placement face The mounting surface of the above-mentioned enlarged base is smaller than the surface of the above-mentioned wafer = younger brother: in a round opening; ®; and ^ ^ is used to place the above-mentioned crystal on an end surface and an inner peripheral surface of the wafer. Jing Lei: The electrostatic suction seat fits the general description, and there is a predetermined gap between the above-mentioned end surface and the surface on which the static electricity is cut. 2) The wafer adsorption device according to item 1 of the patent application scope, wherein the electrostatic suction seat A flange is further provided below the base. 3. The wafer adsorption device according to item 1 of the patent application scope of the claim, wherein the above-mentioned placement is inclined toward the base and has an inclination range of 2 to 100 〇 · As described in item 3 of the scope of patent application The wafer adsorption device, in which the above-mentioned placing surface is enlarged and inclined to the base, and has a slope range of 5 to 20. The wafer adsorption device according to item 1 of the patent application range, wherein the end surface and the electrostatic suction seat are placed. The predetermined drop of the f-plane is between 0.01 and 1 mm. 6 As described in the scope of the patent application No. 4 顼, the end face and the electrostatic suction seat are described above. The tg has a fixed drop of 0.05 to 0. The wafer adsorption Device, in which the agricultural surface I1M 0503-6793TWF1; TSMC2001 -0670; denn i sp tc 10th 515024

mk 90130332 曰修正六、申請專利範ffi 3毫米之間。其中 7. 如申請專利範圍第1項所述之晶圓吸附裝置上述靜電吸座之放置面上具有複數小圓凸點。其中 8. 如申請專利範圍第1項所述之晶圓吸附裝置上述靜電吸座係由氮化銘所構成。 9. 如申請專利範圍第1項所述之晶圓吸附裝置，其中上述隔絕環係由石英（q u a r t z )所構成。其中 1 0.如申請專利範圍第1項所述之晶圓吸附裝置上述***環係由矽化物所構成。其中 1 1.如申請專利範圍第1項所述之晶圓吸附裝置上述晶圓吸附裝置係適用於半導體之蝕刻設備中。mk 90130332 said to amend the patent application patent between 3 mm. Among them, the wafer adsorption device described in item 1 of the scope of the patent application has a plurality of small round bumps on the placement surface of the electrostatic suction seat. Among them, the wafer adsorption device described in item 1 of the scope of the patent application. The above electrostatic suction seat is made of nitride. 9. The wafer adsorption device according to item 1 of the scope of patent application, wherein the above-mentioned isolation ring is composed of quartz (q u a r t z). Among them, 10. The wafer adsorption device described in item 1 of the scope of the patent application. The insertion ring is composed of silicide. Among them 1. 1. The wafer adsorption device described in item 1 of the scope of patent application The above wafer adsorption device is suitable for semiconductor etching equipment.

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