JPH09283609A - Electrostatic clamping device - Google Patents
Electrostatic clamping deviceInfo
- Publication number
- JPH09283609A JPH09283609A JP11578196A JP11578196A JPH09283609A JP H09283609 A JPH09283609 A JP H09283609A JP 11578196 A JP11578196 A JP 11578196A JP 11578196 A JP11578196 A JP 11578196A JP H09283609 A JPH09283609 A JP H09283609A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- chuck plate
- base member
- electrostatic
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコンウエハな
どを保持するための静電吸着装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic attraction device for holding a silicon wafer or the like.
【０００２】[0002]
【従来の技術】従来から、例えば半導体装置製造用のド
ライエッチング装置、プラズマＣＶＤ装置、イオン注入
装置、スパッタリング装置等にてシリコンウエハの固
定、搬送に静電吸着装置が用いられている。この静電吸
着装置は、ウエハの冷却または加熱機構が組み込まれた
ベース部材と、このベース部材の表面に取り付けられた
静電チャック板とを有している。この静電チャック板
は、セラミックス基板の上に金属の電極を形成し、その
上にガラス、セラミックス等の無機材料で絶縁層を形成
してなる。ここで、静電吸着装置は、単にシリコンウエ
ハを固定するだけでなく、上記各種装置内でシリコンウ
エハを冷却、加熱するための媒体にもなっている。2. Description of the Related Art Conventionally, an electrostatic adsorption device has been used for fixing and carrying a silicon wafer in, for example, a dry etching device for manufacturing a semiconductor device, a plasma CVD device, an ion implantation device, and a sputtering device. This electrostatic adsorption device has a base member in which a cooling or heating mechanism for a wafer is incorporated, and an electrostatic chuck plate attached to the surface of the base member. In this electrostatic chuck plate, a metal electrode is formed on a ceramic substrate, and an insulating layer made of an inorganic material such as glass or ceramics is formed on the metal electrode. Here, the electrostatic adsorption device serves not only as a medium for fixing the silicon wafer, but also as a medium for cooling and heating the silicon wafer in the various devices.
【０００３】上記した静電チャック板をベース部材に取
り付ける方法としては、静電チャック板の裏面側に孔を
開け、その孔にナットを埋め込み、ベース部材にボルト
締結したり静電チャック板の外周部をリング状部材で押
さえる機械的締結や、接着剤による接着があった。As a method for attaching the above-mentioned electrostatic chuck plate to the base member, a hole is made in the back surface side of the electrostatic chuck plate, a nut is embedded in the hole, and bolts are fastened to the base member or the outer periphery of the electrostatic chuck plate. There were mechanical fastening in which a ring-shaped member was pressed against the portion and bonding with an adhesive.
【０００４】[0004]
【発明が解決しようとする課題】上記機械的締結方式
は、取り付け作業は容易であるものの、ベース部材と静
電チャック部材とが点若しくは線でしか接触していない
ため、冷却または加熱時の熱伝達効率が悪いと云う問題
がある。Although the mechanical fastening method is easy to install, the base member and the electrostatic chuck member are in contact with each other only at a point or a line, so that the heat at the time of cooling or heating is increased. There is a problem that the transmission efficiency is poor.
【０００５】また、接着方式は、一般に接着剤の熱伝導
率が小さいことから上記同様冷却または加熱時の熱伝達
効率が悪いと云う問題がある。また、上記半導体製造装
置などは、各種腐食性のあるガスを使用するため、接着
剤によってはガスが発生したり耐久性が低下するという
問題もある。In addition, the adhesive method has a problem that the heat transfer efficiency during cooling or heating is poor, as in the above, because the heat conductivity of the adhesive is generally small. Further, since the semiconductor manufacturing apparatus and the like use various corrosive gases, there is a problem in that gas is generated or durability is reduced depending on the adhesive.
【０００６】本発明は上記したような従来技術の問題点
に鑑みなされたものであり、その主な目的は、冷却また
は加熱時の熱伝達効率が高い静電吸着装置を提供するこ
とにある。The present invention has been made in view of the above-mentioned problems of the prior art, and its main object is to provide an electrostatic adsorption device having high heat transfer efficiency during cooling or heating.
【０００７】[0007]
【課題を解決するための手段】上記した目的は本発明に
よれば、基板を保持するための静電吸着装置であって、
前記基板の冷却または加熱機構が組み込まれたベース部
材の表面に、セラミックスを基板とする静電チャック板
を全面に亘りろう付したことを特徴とする静電吸着装置
を提供することにより達成される。特に、前記ベース部
材と前記静電チャック板との間に、該両者の中間若しく
は静電チャック板と同等の熱膨張係数を有するインサー
ト材を介在させると良い。このため、前記静電チャック
板がセラミックスを基板とし、前記ベース部材がアルミ
ニウム及び／またはアルミニウム合金からなる場合、前
記インサート材に６×１０-6／Ｋ乃至１０×１０-6／Ｋ
の熱膨張係数を有する低熱膨張金属及び／または金属と
無機材料との複合材料を用いると良い。According to the present invention, there is provided an electrostatic chucking device for holding a substrate, comprising:
This is achieved by providing an electrostatic chucking device characterized in that an electrostatic chuck plate having a ceramic substrate is brazed over the entire surface of a base member in which the substrate cooling or heating mechanism is incorporated. . In particular, an insert material having a thermal expansion coefficient similar to that of the intermediate or the electrostatic chuck plate may be interposed between the base member and the electrostatic chuck plate. Therefore, when the electrostatic chuck plate is made of ceramics and the base member is made of aluminum and / or aluminum alloy, 6 × 10 −6 / K to 10 × 10 −6 / K is added to the insert material.
It is preferable to use a low thermal expansion metal having a coefficient of thermal expansion of and / or a composite material of a metal and an inorganic material.
【０００８】[0008]
【発明の実施の形態】以下に、本発明の好適な実施形態
について添付の図面を参照して詳しく説明する。Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
【０００９】図１は、本発明が適用された静電吸着装置
の要部構成を示す断面図、図２はその拡大図である。ベ
ース部材１は円盤状をなし外周にフランジ部を有するア
ルミニウム合金からなり、その内部には複数の冷却水通
路１ａが画定されている。また、その上面にはろう材２
を介して円盤状のアルミニウム合金と炭化珪素との複合
材料（Ａｌ−ＳｉＣ）からなる厚さ１ｍｍ〜２ｍｍのイ
ンサート材３がろう付されている。更にインサート材３
の上面にはろう材４を介して円盤状の静電チャック板５
がろう付されている。この静電チャック板５は、アルミ
ナベースのセラミックス基板５ａと、金属導体層５ｂ
と、ガラス絶縁層５ｃとを積層してなる。FIG. 1 is a sectional view showing the structure of the main part of an electrostatic attraction device to which the present invention is applied, and FIG. 2 is an enlarged view thereof. The base member 1 is made of an aluminum alloy having a disc shape and a flange portion on the outer periphery, and a plurality of cooling water passages 1a are defined inside the base member 1. Moreover, the brazing material 2 is provided on the upper surface thereof.
The insert material 3 having a thickness of 1 mm to 2 mm made of a composite material (Al—SiC) of a disc-shaped aluminum alloy and silicon carbide is brazed via the. Further insert material 3
A disk-shaped electrostatic chuck plate 5 is provided on the upper surface of the plate through a brazing material 4.
Is brazed. The electrostatic chuck plate 5 includes an alumina-based ceramic substrate 5a and a metal conductor layer 5b.
And a glass insulating layer 5c.
【００１０】ここで、アルミナベースのセラミックスの
熱膨張係数は７×１０-6／Ｋ〜８×１０-6／Ｋ、アルミ
ニウム及びアルミニウム合金の熱膨張係数は２４×１０
-6／Ｋ〜２７×１０-6／Ｋであり、静電チャック板５が
直径φ６インチ未満の比較的小型な装置の場合、ベース
部材１に直接静電チャック板５をろう付しても良いが、
直径φ６インチ以上の比較的大型な装置の場合、ろう付
後の冷却時の熱応力により静電チャック板５が割れる。
そこで、両者間に熱膨張係数が６１０×１０-6／Ｋ〜１
０×１０-6／Ｋのインサート材３を介在させて熱応力を
緩和させることにより、静電チャック板５が保護され
る。これは実際のウエハ処理時などに於ける温度変化時
にも同様である。このとき、静電チャック板のセラミッ
クス基板５ａの厚さを、直径φ６インチタイプで０．７
ｍｍ〜３．０ｍｍ、好ましくは１．０ｍｍ〜３．０ｍｍ
とし、直径φ８インチ〜φ１２インチタイプで１．０〜
２．５mm程度に薄くする必要がある。[0010] Here, the thermal expansion coefficient of the alumina-based ceramics 7 × 10 -6 / K~8 × 10 -6 / K, the thermal expansion coefficient of 24 × 10 aluminum and aluminum alloy
-6 / K to 27 × 10 -6 / K, and when the electrostatic chuck plate 5 is a relatively small device having a diameter of less than 6 inches, even if the electrostatic chuck plate 5 is directly brazed to the base member 1. Good but
In the case of a relatively large apparatus having a diameter of 6 inches or more, the electrostatic chuck plate 5 is cracked by the thermal stress during cooling after brazing.
Therefore, the coefficient of thermal expansion between them is 610 × 10 −6 / K to 1
The electrostatic chuck plate 5 is protected by interposing the insert material 3 of 0 × 10 −6 / K to relax the thermal stress. This also applies when the temperature changes during the actual wafer processing. At this time, the thickness of the ceramic substrate 5a of the electrostatic chuck plate is 0.7 for the 6-inch diameter type.
mm-3.0 mm, preferably 1.0 mm-3.0 mm
And the diameter is φ8 inch ~ φ12 inch type 1.0 ~
It needs to be thinned to about 2.5 mm.
【００１１】尚、実際にはインサート材３の材質として
は、銅及び／または銅合金と炭化珪素の複合材料、銅及
び／または銅合金とタングステンの合金、ニオブ、タン
タルなどの低熱膨張金属などを用いることができる。ま
た、本実施形態に於ける構成では、ベース部材１の内部
に画定された通路を冷却水通路としたが、用途に応じて
加熱ヒータ等を埋め込んでウエハを加熱するようにして
も良い。Actually, as the material of the insert material 3, a composite material of copper and / or a copper alloy and silicon carbide, an alloy of copper and / or a copper alloy and tungsten, a low thermal expansion metal such as niobium, tantalum, or the like is used. Can be used. Further, in the configuration of this embodiment, the passage defined inside the base member 1 is used as the cooling water passage, but a heater or the like may be embedded to heat the wafer according to the application.
【００１２】[0012]
【発明の効果】上記した説明により明らかなように、本
発明による静電吸着装置によれば、冷却または加熱機構
が組み込まれたベース部材の表面に、セラミックスを基
板とする静電チャック板を全面に亘りろう付することに
より、静電チャック板の裏面全面から放熱または吸熱で
き、機械的締結方式や接着方式に比較して冷却または加
熱時の熱伝達効率が著しく向上する。また、ベース部材
と静電チャック板との間に、該両者の中間若しくは静電
チャック板と同等の熱膨張係数を有するインサート材を
介在させることにより、ろう付の冷却時、その他温度変
化時の熱応力が緩和され、静電チャック板が好適に保護
され、その耐久性も向上する。As is apparent from the above description, according to the electrostatic adsorption device of the present invention, the entire surface of the electrostatic chuck plate having the ceramic substrate is provided on the surface of the base member in which the cooling or heating mechanism is incorporated. By brazing for a long time, heat can be dissipated or absorbed from the entire back surface of the electrostatic chuck plate, and the heat transfer efficiency during cooling or heating can be remarkably improved as compared with the mechanical fastening system or the adhesive system. Further, by interposing an insert material having a coefficient of thermal expansion equivalent to that of the electrostatic chuck plate or between the base member and the electrostatic chuck plate, it is possible to cool the brazing or to change the temperature. Thermal stress is relieved, the electrostatic chuck plate is suitably protected, and its durability is also improved.
【図１】本発明が適用された静電吸着装置の要部構成を
示す断面図。FIG. 1 is a cross-sectional view showing a configuration of a main part of an electrostatic attraction device to which the present invention is applied.
【図２】図１の要部拡大図FIG. 2 is an enlarged view of a main part of FIG. 1;
１ ベース部材 １ａ 冷却水通路 ２ ろう材 ３ インサート材 ４ ろう材 ５ 静電チャック板 ５ａ セラミックス基板 ５ｂ 金属導体層 ５ｃ ガラス絶縁層 1 base member 1a cooling water passage 2 brazing material 3 insert material 4 brazing material 5 electrostatic chuck plate 5a ceramics substrate 5b metal conductor layer 5c glass insulating layer
Claims (3)
あって、 前記基板の冷却または加熱機構が組み込まれたベース部
材の表面に、セラミックスを基板とする静電チャック板
を全面に亘りろう付したことを特徴とする静電吸着装
置。1. An electrostatic chucking device for holding a substrate, wherein an electrostatic chuck plate made of ceramics is provided over the entire surface of a base member in which a cooling or heating mechanism for the substrate is incorporated. An electrostatic adsorption device characterized by being attached.
との間に、該両者の中間若しくは前記静電チャック板と
同等の熱膨張係数を有するインサート材を介在させたこ
とを特徴とする請求項１に記載の静電吸着装置。2. An insert material having a thermal expansion coefficient intermediate between the base member and the electrostatic chuck plate or having the same coefficient of thermal expansion as that of the electrostatic chuck plate is interposed between the base member and the electrostatic chuck plate. 1. The electrostatic adsorption device according to 1.
基板とし、 前記ベース部材がアルミニウム及び／またはアルミニウ
ム合金からなり、 前記インサート材が６×１０-6／Ｋ乃至１０×１０-6／
Ｋの熱膨張係数を有する低熱膨張金属及び／または金属
と無機材料との複合材料からなることを特徴とする請求
項１若しくは請求項２に記載の静電吸着装置。3. The electrostatic chuck plate uses ceramics as a substrate, the base member is made of aluminum and / or aluminum alloy, and the insert material is 6 × 10 −6 / K to 10 × 10 −6 /
3. The electrostatic adsorption device according to claim 1, which is made of a low thermal expansion metal having a coefficient of thermal expansion of K and / or a composite material of a metal and an inorganic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11578196A JPH09283609A (en) | 1996-04-12 | 1996-04-12 | Electrostatic clamping device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11578196A JPH09283609A (en) | 1996-04-12 | 1996-04-12 | Electrostatic clamping device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09283609A true JPH09283609A (en) | 1997-10-31 |
Family
ID=14670910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11578196A Pending JPH09283609A (en) | 1996-04-12 | 1996-04-12 | Electrostatic clamping device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09283609A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1132948A2 (en) * | 2000-03-10 | 2001-09-12 | Canon Kabushiki Kaisha | Substrate holding device, semiconductor manufacturing apparatus and device manufacturing device |
| JP2004312025A (en) * | 2004-04-23 | 2004-11-04 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor manufacturing system |
| CN102719895A (en) * | 2011-03-29 | 2012-10-10 | 中国科学院微电子研究所 | Wafer transfer apparatus and wafer transfer method |
| CN105448796A (en) * | 2014-09-29 | 2016-03-30 | 盛美半导体设备（上海）有限公司 | Chuck |
| JP2017126640A (en) * | 2016-01-13 | 2017-07-20 | 日本特殊陶業株式会社 | Holding device |
| JP2017126641A (en) * | 2016-01-13 | 2017-07-20 | 日本特殊陶業株式会社 | Holding device |
-
1996
- 1996-04-12 JP JP11578196A patent/JPH09283609A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1132948A2 (en) * | 2000-03-10 | 2001-09-12 | Canon Kabushiki Kaisha | Substrate holding device, semiconductor manufacturing apparatus and device manufacturing device |
| EP1132948A3 (en) * | 2000-03-10 | 2006-04-26 | Canon Kabushiki Kaisha | Substrate holding device, semiconductor manufacturing apparatus and device manufacturing device |
| US7102735B2 (en) | 2000-03-10 | 2006-09-05 | Canon Kabushiki Kaisha | Substrate holding device, semiconductor manufacturing apparatus and device manufacturing method |
| JP2004312025A (en) * | 2004-04-23 | 2004-11-04 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor manufacturing system |
| CN102719895A (en) * | 2011-03-29 | 2012-10-10 | 中国科学院微电子研究所 | Wafer transfer apparatus and wafer transfer method |
| CN105448796A (en) * | 2014-09-29 | 2016-03-30 | 盛美半导体设备（上海）有限公司 | Chuck |
| JP2017126640A (en) * | 2016-01-13 | 2017-07-20 | 日本特殊陶業株式会社 | Holding device |
| JP2017126641A (en) * | 2016-01-13 | 2017-07-20 | 日本特殊陶業株式会社 | Holding device |
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