TW508652B

TW508652B - Device and method for wafer drying

Info

Publication number: TW508652B
Application number: TW90124418A
Authority: TW
Inventors: Wen-Jang Guo; Sz-Yau Wang
Original assignee: Taiwan Semiconductor Mfg
Priority date: 2001-10-03
Filing date: 2001-10-03
Publication date: 2002-11-01

Abstract

A wafer drying device, which comprises a microwave drying room, a top cover, a wafer accommodation tank, a gas input, a gas output, a liquid output and a supersonic spray, and the assembly of the supersonic spray comprises a solution pipe, a supersonic agitator, and a spray head. The solution is agitated by the supersonic agitator, and the spray head is to nebulize the solution and spray onto the wafer surface, so as to dissolve the solution in the water on the wafer surface. After being heated by microwave, the solution is nebulized and vaporized, and the dried inert gas is sent from the gas output and diluted, and exhausted from the gas output, so as to get a clear and dry wafer surface.

Description

508652 五、發明說明（1) 發明領域：本發明與一種晶圓乾燥裝置與方法有關，特別是利用溶液噴霧和微波加熱，達到晶圓乾燥的裝置與方法。發明背景：半導體技術在積體電路製造技術上已有相當程度之進展。半導體元件與電路之設計不斷朝向節省元件空間提高積集度（Packing density)發展，例如早期之動態隨機存取記憶胞（DRAM memory cell)需要六個電晶體，而現在的動態隨機存取記憶胞只需要一個電晶體一個電容。半導體製造過程中包含製程如氧化、擴散、化學氣相沈積以及熱處J里均在爐管或反應室（Chamber)中進行。 u LS I製程上，矽晶圓在進入高溫爐管進行擴散或氧牝熱^ =如、化學氣相及薄膜沉積前或蝕刻後，晶圓均需鏐化學清洗，高純度的去離子純水（Deionize water而洗濯及最後除濕乾燥化’使晶圓常潔二。主要清除晶圓表面的污染物Π ;。尤其是度，已低於一百埃以下，尚需極（fate oxide)的厚斜糙度和自然氧化物的清除，以：η曰曰圓表面的微建到+ V體兀件超薄閘極508652 V. Description of the invention (1) Field of the invention: The present invention relates to a wafer drying device and method, especially a device and method for achieving wafer drying using solution spraying and microwave heating. BACKGROUND OF THE INVENTION: Semiconductor technology has made considerable progress in integrated circuit manufacturing technology. The design of semiconductor components and circuits is continually moving towards saving component space and increasing packing density. For example, early dynamic random access memory cells (DRAM memory cells) required six transistors, and now dynamic random access memory cells Only one transistor and one capacitor are needed. Semiconductor manufacturing processes including processes such as oxidation, diffusion, chemical vapor deposition, and heat treatment are all performed in furnace tubes or chambers. u In the LS I process, silicon wafers enter the high temperature furnace tube for diffusion or oxygen heat treatment. For example, before chemical vapor phase and thin film deposition or after etching, the wafers need to be chemically cleaned and high-purity deionized pure water. (Deionize water and wash and finally dehumidify and dry the wafer to make it clean. 2. It mainly removes pollutants on the wafer surface; especially the degree, which is below 100 angstroms, and the thickness of fate oxide is still required. Roughness and removal of natural oxides: η said that the surface of the round surface is micro-built to + V body ultra-thin gate

508652 五、發明說明（2) 氧化層的電性參數及特性，並達到元件的品質與可靠度矽晶圓經一連串化學槽的洗淨及DI超純水洗濯，最後的過程’即是將沾水潮濕的矽晶圓，除濕乾燥。使用異丙醇（IPA，isopropyl alcohol)蒸氣乾燥法，此乾燥技術準靜悲的力疋乾技術’因洗淨後潮濕的晶圓傳送至i A蒸气' 室内，IPA由高純度的氮氣（N2)作為傳輸氣體（Carrie= α g a s ) ’ ‘入洛氣乾無至内經由底部的加熱器，使ι p a受熱蒸發為蒸汽，潮濕的晶圓置放在I P A蒸汽乾燥室内，沉浸於I P A蒸汽中，接著調整排氣壓力，使丨p a蒸汽室内達到&穩定的平行流，I P A的高揮發性將晶圓表面的水份脫水乾μ 化，並去除表面的水痕、微粒及金屬雜質。整個脫水乾化過程中，除了機械手臂傳送晶圓進出 I ρ Α蒸汽室外，沒有其他活動的機會會產生微粒造成污染。因此整座IPA蒸汽乾燥室，經超低貫穿空氣過濾器 (Ultra l〇w penetration air-filter， ULPA filter)過遽的潔淨空氣平行流，維持超潔淨的丨PA乾燥蒸汽室。工pa 的、、、屯度有阻值測試儀（R e s i s t i v i t y m e t e r)來偵測其純度及水份含量，整座I PA蒸汽乾燥室是用高等級的不銹鋼& 6 L材貝，表面經由機械拋光及化學處理製作完成為無塵的超潔淨I PA蒸汽乾燥室。 …、洛汽室的侧壁裝置有加熱器，溫度設定為2 〇〇，以508652 V. Description of the invention (2) Electrical parameters and characteristics of the oxide layer, and achieve the quality and reliability of the element Silicon wafers are washed with a series of chemical tanks and DI ultrapure water. Water-wet silicon wafers, desiccated and dried. Isopropyl alcohol (IPA) vapor drying method is used. This drying technology is a quasi-quiet and forceful drying technology. ) As a transport gas (Carrie = α gas) '' In Luoqi dry without passing through the heater at the bottom, ιpa is heated to evaporate into steam, wet wafers are placed in the IPA steam drying chamber, immersed in IPA steam, Next, the exhaust pressure was adjusted to achieve & stable parallel flow in the steam chamber. The high volatility of IPA dehydrated and dried the water on the wafer surface, and removed water marks, particles and metal impurities on the surface. During the entire dehydration and drying process, except for the robotic arm to transport wafers into and out of the I ρ Α steam room, there is no chance of other activities to generate particles to cause pollution. Therefore, the entire IPA steam drying chamber passes parallel clean air passing through ultra-low penetration air-filter (ULPA filter) to maintain an ultra-clean PA drying steam chamber. There are resistance testers (Resistivitymeter) to detect its purity and moisture content. The entire I PA steam drying chamber is made of high-grade stainless steel & 6 L material, the surface is mechanically The polishing and chemical treatment are completed into a dust-free ultra-clean I PA steam drying chamber. …, The side wall device of the Luo steam room has a heater, the temperature is set to 2000, and

第5頁 508652 五、發明說明（3) 避免I P A及水汽凝結在側壁，同時底部加熱器也不能過熱，避免IP A沸騰，太強的蒸汽，也會污染晶圓表面。蒸汽室的上端裝有冷卻器，使之除濕脫水乾燥後，含有水份的I P A蒸汽凝結為液體，流入乾燥室下端的液體排出端回收淨化後再使用。影響I PA蒸汽乾燥的主要因素有三種，分別為I PA的純度及水含量、I P A蒸汽的流量及流速和I P A蒸汽室内的潔淨度，因此超潔淨的I P A的蒸汽乾燥技術，需要調適這些因素，來達到最完美的條件，使脫水乾燥後的晶圓表面無微粒、水痕及金屬雜質的污染。I P A乾燥法，主要是I p a的高揮發性，將表面水份脫水乾燥，達到無水痕、無微粒的污染，且易燃性的I P A應特別注意排氣及防火的安全。而上述之氣體進入乾燥裝置巾，在具有t p A蒸汽乾燥法下（a)需要花很長的時間進行晶圓乾燥；（b)且心某汽乾燥法需要使用大量的ίΡΑ溶液，即耗損較高成本；（；；）必須在高溫下進行，將IΡΑ溫度加埶和、粒尽1 ；成ΙΡΑ起火燃燒。因此如何針對:，# f容易造供一晶圓乾燥裝置及方法，縮^制之問題加以改善，提和避免IPA燃燒，以減少製程之程時間、降低IpA用量 <損失，將相當重要。發明目的及概述：Page 5 508652 V. Description of the invention (3) Avoid IPA and water vapor from condensing on the side wall. At the same time, the bottom heater must not overheat, avoid IP A boiling, too strong steam, and also contaminate the surface of the wafer. The upper end of the steam room is equipped with a cooler. After dehumidifying, dehydrating and drying, the I PA vapor containing moisture condenses into a liquid, and the liquid discharged into the lower end of the drying room is recovered and purified before reuse. There are three main factors affecting I PA steam drying, namely the purity and water content of I PA, the flow and velocity of IPA steam, and the cleanliness of the IPA steam chamber. Therefore, the ultra-clean IPA steam drying technology needs to be adjusted. In order to achieve the most perfect conditions, the surface of the wafer after dehydration and drying is free of contamination by particles, water marks and metal impurities. The I PA drying method is mainly due to the high volatility of I PA. The surface moisture is dehydrated and dried to achieve no water marks and no particulate pollution, and the flammable I PA should pay special attention to the safety of exhaust and fire prevention. When the above-mentioned gas enters the drying device towel, with the tp A steam drying method (a) it takes a long time to dry the wafer; (b) and a certain steam drying method requires the use of a large amount of ίΑΑ solution, that is High cost; (;;) must be carried out at high temperature, the IPA temperature is increased, and the grains are made 1; the IPA is set on fire. Therefore, how to make it easy to provide a wafer drying device and method, to reduce the problem of reduction, and to avoid IPA combustion, in order to reduce the process time, reduce the amount of IpA < loss, will be very important. Purpose and summary of the invention:

508652 五、發明說明（4) 本發明之主要目的為提供一種去除晶圓表面水份之乾燥裝置。本發明之另一目的為提供一種去除晶圓表面水份之乾燥方法。本發明之晶圓乾燥裝置包括一徵波乾燥室、頂蓋，兩 ·· 者結合可形成一密閉腔室，供做晶圓存放和乾燥用之空間，且微波乾燥室可發射微波能量，用以乾燥晶圓片用。微波乾燥室内並設有一晶圓容置槽。微波乾燥室一端設有一氣體輸入端，做為輸入稀釋微波乾燥室氣體用；微波乾燥室另一端設有一氣體排出端，作為排出氣體用；該晶圓乾燥裝置之微波乾燥室又另一端設有一液體排出端，可將滴落之.液體排出微波乾燥室。該晶圓乾燥裝置並設有至少一個超童波喷霧器，該超音波喷霧器之組成包含一組溶液輸送管、超音波震盪器和喷灑頭，且超音波喷霧器之運作並不限定於微波乾燥室内運作，也可移動至微波乾燥室外進行運作。溶液輸送管可輸送晶圓乾燥之溶液，溶液經由超音波震盪器震盪，而喷灑頭則將溶液霧化並喷灑至晶圓表面。發明詳細說明：508652 V. Description of the invention (4) The main purpose of the present invention is to provide a drying device for removing moisture from the surface of a wafer. Another object of the present invention is to provide a drying method for removing moisture from the surface of a wafer. The wafer drying device of the present invention includes an eigenwave drying chamber and a top cover. The combination of the two can form a closed chamber for space for wafer storage and drying, and the microwave drying chamber can emit microwave energy. For drying wafers. The microwave drying chamber is also provided with a wafer receiving tank. A gas input end is provided at one end of the microwave drying chamber for inputting diluted microwave drying chamber gas; a gas exhaust end is provided at the other end of the microwave drying chamber for exhaust gas; another end of the microwave drying chamber of the wafer drying device is provided with a The liquid discharge end can drop the liquid. The liquid is discharged out of the microwave drying chamber. The wafer drying device is also provided with at least one ultrasonic sprayer. The composition of the ultrasonic sprayer includes a set of solution delivery tubes, an ultrasonic oscillator and a spray head. The operation of the ultrasonic sprayer and The operation is not limited to the microwave drying room, and can also be moved to the microwave drying room for operation. The solution transfer tube can transport the dried wafer solution. The solution is oscillated by the ultrasonic oscillator, and the spray head atomizes and sprays the solution onto the wafer surface. Detailed description of the invention:

508652 五、發明說明（5) 石夕晶圓經一連串化學槽的洗淨及去離子（DI water)超純水洗濯，最後的過程，即是將沾水潮濕的矽晶圓，除濕乾燥。使用異丙醇（IPA， iSOpropyl alcohol)蒸氣乾燥法，將洗淨後潮濕的晶圓傳送至I p A蒸汽室内，丨pa由高純度的氮氣（)作為傳輸氣體（c a r r i e r g a s )，導入蒸氣乾燥室内經由底部的加熱器，使IPA受熱蒸發為蒸汽，潮濕的晶圓置放在I PA蒸汽乾燥室内，沉浸於！ pa蒸汽中，丨pA 的咼揮發性將晶圓表面的水份脫水乾化，並去除表面的水痕、微粒及金屬雜質。本發明揭露一種新式晶圓乾燥裝置及方法’詳細說明如下，所述之較佳實施例只做一說明，非用以限定本發明。圖一為本發明之晶圓乾燥裝置剖面 5青蒼閱圖一所示不意圖，該裝置包括一微波乾燥室（Micr〇wave drying c^mber)l〇0及頂蓋（T〇p c〇ve〇1〇2，兩者結合可形成一山閉I至，供做晶圓存放和乾燥用之空間，且微波乾燥室 =0可發射微波能量，後續用以乾燥晶圓片用。在該微波 ^ =至1 0 0内並设有一晶圓容置槽丨〇 4，可供放置或固定圓1 06用。妒在该晶圓乾燥裝置之微波乾燥室⑽—端並設有一氣 ’做為輸入稀釋微波乾燥室1〇〇氣體$，輸入圓Ϊ體，如氮氣(N2)、氬氣(紅)等；並於該晶圓乾無裝置之微波乾燥室100另一端設有一氣體排出端508652 V. Description of the invention (5) Shi Xi wafers are washed with a series of chemical tanks and washed with DI water. The final process is to dehumidify and dry the silicon wafers that are moistened with water. Isopropyl alcohol (IPA, iSOpropyl alcohol) steam drying method is used to transfer the cleaned wet wafer to the I p A steam chamber. The high-purity nitrogen () is used as the carrier gas to introduce the cleaned wafer into the steam drying chamber. Through the heater at the bottom, the IPA is heated to evaporate into steam. The wet wafer is placed in the I PA steam drying chamber and immersed in it! In the pa steam, the volatility of pA dehydrates the water on the wafer surface and removes water marks, particles and metal impurities on the surface. The present invention discloses a new type of wafer drying device and method ', which are described in detail below. The preferred embodiment described is only described, and is not intended to limit the present invention. Figure 1 is a cross-sectional view of a wafer drying device according to the present invention. Figure 5 is a schematic view of the figure. The device includes a microwave drying chamber (Micrwave drying c ^ mber) 100 and a top cover (T〇pc〇ve). 〇1〇2, the two can be combined to form a closed space for wafer storage and drying space, and the microwave drying chamber = 0 can emit microwave energy for subsequent use to dry wafers. In this microwave ^ = Up to 100 and a wafer receiving slot 丨〇4, which can be used to place or fix a circle 10 06. I am jealous in the microwave drying chamber of the wafer drying device and set up a gas' as Enter 100 micrometers of diluted microwave drying chamber, enter round body, such as nitrogen (N2), argon (red), etc .; and set a gas exhaust port at the other end of the wafer drying chamber 100 without microwave drying chamber

第8頁 508652 五、發明說明（6) 11 0，作為排出微波乾燥室丨〇〇内之氣體用；並於該晶圓乾燥裝置之微波乾燥室1〇〇又另一端設有—液體排出端112，可供作排出水（或溶液）之用。。亥a日圓乾無裝置並設有一個以上的超音波喷霧哭 (Ultrasonic Nebulizer) 144，該超音波噴霧器；[14之組成包含一組溶液輸送管1 1 6、超音波震盪器1 1 8和喷丨麗頭 1 2 0，且超音波喷霧器丨丨4之運作並不限定於微波乾燥室 1 0 0内運作’也可移動至微波乾燥室1 〇〇外進行運作，如圖二所示。溶液輸送管丨丨6可輸送晶圓1 0 6乾燥之溶液，如 IPA和去離子水等；溶液在輸送過程，經由喷灑頭12〇和超音波震盪器1 1 8震盪，將溶液霧化並喷灑至晶圓丨〇 6表面。 5月.參閱圖二’圖三為本發明晶圓乾燥之喷霧程序示意圖。將晶圓106置於晶圓容置槽104上，並關閉氣體輸入端 1 0 8與氣體排出端11 〇的閥門，以杜絕外界氣體干擾，及防止I P A喷霧在此時排出。接著開始啟動超音波喷霧器1 1 *，由超音波喷霧器11 4之溶液輸送管1 1 6輸入I p A溶液，其輸入之溶液不限定為I PA，可為丨PA加去離子水之混合溶液等’接著溶液經由超音波震盪器118震盪，將乂上A签液霧也，產^ΙΡΑ溶液噴霧122，並喷灑至晶圓1〇6表面，使其微波乾煉室100充滿ΙΡΑ溶液嘴霧122，喷霧122時間約為3〇秒至3 0 0秒，最佳之實施例為6 〇秒。超音波震盪頻率範圍約為1·0ΜΗζ至5·〇ΜΗζ，最佳之實施例為163〇2。Page 8 508652 V. Description of the invention (6) 11 0 for exhausting the gas in the microwave drying chamber 丨 00; and the microwave drying chamber 100 and the other end of the wafer drying device is provided with a liquid discharge end 112, can be used for draining water (or solution). . The Japanese Yen has no device and is equipped with more than one Ultrasonic Nebulizer 144, the ultrasonic sprayer; [14 consists of a set of solution delivery tubes 1 1 6 and ultrasonic oscillators 1 1 8 and Spraying 丨 head 1 2 0, and the operation of the ultrasonic sprayer 丨 4 is not limited to the operation within the microwave drying chamber 100, it can also be moved to the microwave drying chamber 1000, as shown in Figure 2. Show. Solution transfer tube 丨 6 can transport wafer 106 dried solutions, such as IPA and deionized water; during the solution transfer, the solution is oscillated through the spray head 120 and the ultrasonic oscillator 1 1 8 to atomize the solution And sprayed onto the wafer surface. May. Please refer to Fig. 2 'and Fig. 3 for a schematic diagram of the spraying process of wafer drying according to the present invention. The wafer 106 is placed on the wafer accommodating tank 104, and the valves of the gas input terminal 108 and the gas discharge terminal 110 are closed to prevent external gas interference and prevent the IPA spray from being discharged at this time. Then start to start the ultrasonic sprayer 1 1 *, input the I p A solution from the solution delivery pipe 1 1 6 of the ultrasonic sprayer 11 4, the input solution is not limited to I PA, and deionization can be added to PA The mixed solution of water, etc. Then the solution was oscillated through the ultrasonic oscillator 118, and the A-label liquid mist was also applied to produce ^ ΙΡΑ solution spray 122, and sprayed on the surface of the wafer 106 to make the microwave drying chamber 100 Fill the mouth spray 122 of the IPA solution. The spraying time is about 30 seconds to 300 seconds, and the preferred embodiment is 60 seconds. The ultrasonic oscillation frequency ranges from about 1.0 MHz to 5.0 MHz, and the preferred embodiment is 16302.

508652 、發明說明（7) 習知技藝之I PA蒸汽乾燥法，需將I pa加熱至2 〇〇 °C，而整個乾燥室的溫度動辄在80 以上，而本發明之ίρ·Α不 %加熱’可使微波乾燥室1 Q 〇的溫度始終維持在1 〇。〇至6 〇 c ’、避免I ρ Α的起火燃燒。ί Ρ Α喷霧丨2 2凝結為微粒後，微粒或晶圓上的溶液流入微波乾燥室丨〇〇下端的液體排出端 11 2排出。。請f閱圖四所示，圖四為本發明晶圓乾燥之微波加熱，序不意圖。接著，停止喷霧1 2 2，開啟氣體輸入端1 〇 8與氣體排出端11〇的閥門，由氣體輸入端1〇8持續導入氮氣 (^ )，作為稀釋微波乾燥室丨〇〇内之氣體，並由氣體排出端110排出，接著微波加熱124晶圓1〇β，微波加熱124之溫 5約在2〒至9 〇。。，微波加熱1 2 4時間約為3 0秒至3 0 0秒，最佳之貝知例為β 〇秒，微波加熱1 2 4頻率範圍約為 2· 45GHZ ’微波加熱功率範圍約為1 00W至2 0 0 0W，最佳之實施例為1 0 0 0 w。508652, Description of the invention (7) The I PA steam drying method of the conventional technique needs to heat I pa to 2000 ° C, and the temperature of the entire drying chamber is more than 80, and the ρρ of the present invention is not%. Heating 'can keep the temperature of the microwave drying chamber 1 Q 〇 at 10 ℃ all the time. 〇 to 6 〇 c ', to avoid I ρ A fire. ί Α spray A 2 2 condenses into particles, and the solution on the particles or wafer flows into the liquid discharge end 11 2 at the lower end of the microwave drying chamber. . Please refer to Figure 4, which is a microwave heating method for drying wafers according to the present invention. Next, stop spraying 1 2 2 and open the valve of the gas input terminal 108 and the gas discharge terminal 110. Nitrogen (^) is continuously introduced from the gas input terminal 108 to serve as a gas for diluting the microwave drying chamber. Then, it is discharged from the gas discharge end 110, and then the wafer 10 is heated by microwave heating 124, and the temperature 5 of the microwave heating 124 is about 2 ° to 90 °. . The microwave heating time is about 30 seconds to 300 seconds. The best example is β 0 seconds. The microwave heating frequency range is about 2.4 GHz. The microwave heating power range is about 100W. To 2 0 0 0W, the best embodiment is 1 0 0 0 w.

—准上述之程序僅作一最佳實施例之說明，非用以 1本 '明、亦可同時進行超音波霧化晶圓和微波加熱 μ & P'啟氣體輪入端10 8與氣體排出端11 〇的閥門，由素體輸入端108持續道入 > 尸“、 ^ 、，導入虱氣（N2)，作為稀釋微波乾燥室1 0 1 1 /1 之氣^並由氣體排出端1 1 〇排出，啟動超音波喷霧| 114，由超音波噴霧器114之溶液輸送管116輸入IPA溶液—The above procedure is only for the description of a preferred embodiment. It is not necessary to use 1 book, but also to carry out ultrasonic atomization wafer and microwave heating at the same time. The valve at the discharge end 11 〇 is continuously introduced from the body input end 108 > corpse ", ^, and the lice gas (N2) is introduced as the gas for diluting the microwave drying chamber 1 0 1 1/1 and discharged from the gas discharge end 1 1 〇 discharge, start the ultrasonic spray | 114, the IPA solution is input from the solution delivery pipe 116 of the ultrasonic sprayer 114

4 508652 五、發明說明（8) =超音波震盪器震盪IPA溶液，喷灑頭120則利用氣體將尸a溶液霧化，產生IPA溶液喷霧122，並喷灑至晶圓ι〇6表面’使其微波乾燥室100充滿IPA溶液噴霧122，喑霖卑間約為3◦秒至_秒，最佳之實施例為二，超頻率乾圍約為1· 0MHz至5· 0MHz，最佳之實施例為 ^63ΜΗζ。。。同時，微波加熱124晶圓1(?6，微波加熱124之度，在50 °C至90 t，微波加熱124時間約為3〇秒至3〇〇秒，最佳之實施例為60秒，微波加熱124頻率範圍約為 Φ # 2.45GHz ’微波加熱功率範圍約為1〇(^至2〇〇〇%，最佳之實施例為1 0 〇〇 W。、本兔明為一嶄新之晶圓乾燥裝置與方法，有別於習知技藝所衍生之缺失，本發明具有下列優點，（a)可縮短晶圓乾燥.的製程時間；（b)可節省IPA的用量；（c)可在低溫下進行，避免IPA起火燃燒。本發明以較佳實施例說明如上，而熟悉此領域技藝者在不脫離本發明之精神範圍内’當可作些許更動潤4 508652 V. Description of the invention (8) = Ultrasonic oscillator oscillates the IPA solution, and the spray head 120 uses gas to atomize the corpse a solution to generate an IPA solution spray 122 and spray it onto the surface of the wafer ι〇6 ' The microwave drying chamber 100 is filled with the IPA solution spray 122, and the Lin Linbei interval is about 3 seconds to _ seconds. The best embodiment is two. The super-frequency dry range is about 1.0 MHz to 5.0 MHz, and the best is The example is ^ 63MΗζ. . . At the same time, microwave heating 124 wafer 1 (? 6, microwave heating 124 degrees, at 50 ° C to 90 t, microwave heating 124 time is about 30 seconds to 300 seconds, the best embodiment is 60 seconds, The microwave heating 124 frequency range is about Φ # 2.45GHz 'The microwave heating power range is about 10% to 2000%, and the best embodiment is 100W. The rabbit is a brand new crystal The circular drying device and method are different from the defects derived from the conventional technology. The present invention has the following advantages: (a) it can shorten the process time of wafer drying; (b) it can save the amount of IPA; (c) it can be used in It is carried out at a low temperature to prevent IPA from burning. The present invention is described above with reference to the preferred embodiments, and those skilled in the art can make some changes without departing from the spirit of the present invention.

飾’其專利保護範圍更當視後附之申請專利範圍及其等同領域而定。The scope of its patent protection depends on the scope of the attached patent application and its equivalent fields.

第11頁 508652 圖式簡單說明圖一為本發明之裝置第一例。圖二為本發明之裝置第二例。圖三為本發明晶圓乾燥之噴霧程序示意圖。圖四為本發明晶圓乾燥之微波加熱程序示意圖。圖式圖號說明：微波乾燥室1 0 0 頂蓋1 0 2 晶圓容置槽1 0 4 晶圓1 0 6 氣體輸入端1 0 8 氣體排出端11 0 液體排.出端112 超音波喷霧器1 1 4 溶液輸送管11 6 超音波震盪器11 8 喷灑頭1 2 0 喷霧122 微波加熱1 2 4Page 11 508652 Brief description of drawings Figure 1 shows the first example of the device of the present invention. Figure 2 is a second example of the device of the present invention. FIG. 3 is a schematic diagram of a spraying process for wafer drying according to the present invention. FIG. 4 is a schematic diagram of a microwave heating procedure for wafer drying according to the present invention. Description of drawings and figures: Microwave drying chamber 1 0 0 Top cover 1 0 2 Wafer receiving tank 1 0 4 Wafer 1 0 6 Gas input 1 0 8 Gas exhaust 11 1 Liquid exhaust. Out 112 Ultrasonic spray Nebulizer 1 1 4 Solution delivery tube 11 6 Ultrasonic oscillator 11 8 Spray head 1 2 0 Spray 122 Microwave heating 1 2 4

第12頁Page 12

Claims

508652 # JL· 六、申請專利範圍 1. 一種晶圓乾燥之裝置，至少包括：一乾燥室，其内部設有容置槽可容置晶圓，且在其一面係形成一開口可供晶圓的輸出/入；以及一個以上的喷霧器；其特徵在於：該贺霧器產生溶液嘴霧’嘴擺晶圓’並由該乾無室產生微波加熱，使晶圓表面水份揮發，獲得潔淨的晶圓表面。 2. 如申請專利範圍第1項之裝置，其中該乾燥室設有 _ 一微波加熱之功能裝置。 3. 如申請專利範圍第1項之裝置，其中該乾燥室之一端設有一氣體輸入端。 4. 如申請專利範圍第3項之裝置，其中該氣體可為惰性氣體。 5. 如申請專利範圍第3項之裝置，其中該氣體可為氮氣（N2)。 · 6 .如申請專利範圍第3項之裝置，其中該氣體可為氬氣（Ar )。 in 第13頁 508652 六、申請專利範圍 - 7.如申請專利範圍第1項之裝置，其中該乾燥室設有一氣體排出端。 8 ·如申請專利範圍第1項之裝置，其中該乾燥室設有一液體排出端。 9 .如申請專利範圍第1項之裝置，其中該喷霧器為超音波喷霧器，可產生超音波喷霧。 1 〇 ·如申請專利範圍第1項之裝置，其中該喷霧器更包 4 括溶液輸送管、超音波震盪器和喷灑頭。 1 1 ·如申請專利範圍第1項之裝置，其中該溶液為異丙醇（IPA)，或異丙醇與去離子水（DI water)混合之組成。 1 2. —種晶圓乾燥之裝置，至少包括：一微波乾燥室，其内部設有容置槽可容置晶圓，且在其一面係形成一開口可供晶圓的輸出/入；以及一個以上的超音波喷霧器； · 其特徵在於：〇該超音波喷霧器產生溶液喷霧，喷灑晶圓，並由該微波乾燥室產生微波加熱，使晶圓表面水份揮發，獲得潔淨的晶圓表面。508652 # JL · VI. Patent application scope 1. A device for drying wafers, at least including: a drying chamber, which is provided with an accommodating slot for accommodating the wafer, and an opening is formed on one side for the wafer Input / output; and more than one sprayer; characterized in that: the sprayer generates a solution nozzle mist 'mouth swings the wafer' and generates microwave heating by the dry chamber to make the wafer surface water volatilize, and obtain Clean wafer surface. 2. For the device in the scope of patent application, the drying chamber is provided with a microwave heating function device. 3. The device according to item 1 of the patent application scope, wherein one end of the drying chamber is provided with a gas input end. 4. For the device in the scope of patent application item 3, the gas may be an inert gas. 5. For the device in the scope of patent application, the gas can be nitrogen (N2). 6. The device according to item 3 of the scope of patent application, wherein the gas may be argon (Ar). in Page 13 508652 6. Scope of patent application-7. The device of scope 1 of the patent application, wherein the drying chamber is provided with a gas exhaust end. 8. The device according to item 1 of the patent application range, wherein the drying chamber is provided with a liquid discharge end. 9. The device according to item 1 of the scope of patent application, wherein the sprayer is an ultrasonic sprayer, which can generate an ultrasonic spray. 10. The device according to item 1 of the scope of patent application, wherein the sprayer further includes a solution delivery pipe, an ultrasonic oscillator, and a spray head. 1 1 · The device according to item 1 of the patent application range, wherein the solution is isopropyl alcohol (IPA), or a mixture of isopropyl alcohol and DI water. 1 2. A device for wafer drying, including at least: a microwave drying chamber, which is provided with an accommodating slot for accommodating the wafer, and an opening is formed on one side for wafer input / output; and More than one ultrasonic sprayer; Features: 〇 The ultrasonic sprayer generates a solution spray, sprays the wafer, and generates microwave heating from the microwave drying chamber to volatilize the water on the wafer surface to obtain Clean wafer surface.

第14頁 508652 六、申請專利範圍 1 3 ·如申請專利範圍第1 2項之裝置，其中該微波乾燥室設有一·氣體輸入端，可輸入稀釋微波乾燥室氣體用之氣體。 1 4 ·如申請專利範圍第1 3項之裝置，其中該氣體可為惰性氣體。 1 5 ·如申請專利範圍第1 3項之裝置，其中該氣體可為氮氣（N 2)。 1 6 ·如申請專利範圍第1 3項之裝置，其中該氣體可為氬氣（Ar )。 1 7 ·如申請專利範圍第1 2項之裝置，其中該微波乾燥室設有一氣體排出端。 1 8 .如申請專利範圍第1 2項之裝置，其中該微波乾燥室設有一液體排出端，可用以回收凝結之溶液。 1 9 ·如申請專利範圍第1 2項之裝置，其中該超音波喷霧器更包括溶液輸送管、超音波震盪器和喷灑頭。 2 0 .如申請專利範圍第1 2項之裝置，其中該溶液為異丙醇（IPA)，或異丙醇與去離子水（DI water)混合之組 mm 第15頁 508652 六、申請專利範圍 * 成。 2 1 · —種晶圓乾燥之方法，該方法至少包含以下步驟·· 提供晶圓；喷灑超音波溶液喷霧至該晶圓表面；微波加熱該晶圓，以獲得潔淨的乾燥晶圓表面。 2 2 ·如申請專利範圍第2 1項之方法，其中該溶液之選用為異丙醇（IPA)，或異丙醇與去離子水（DI water)混合 ‘ 之組成。 2 3 ·如申請專利範圍第2 1項之方法，其中該溶液喷霧可利用超音波喷霧器產生。 2 4 .如申請專利範圍第2 1項之方法，其中該喷霧工作溫度為1 0°C至6 0°C。 2 5 ·如申請專利範圍第2 1項之方法，其中該喷霧時間約為3 0秒至3 0 0秒。 ® 2 6 .如申請專利範圍第2 5項之方法，其中該喷霧時間最佳之實施例為6 0秒。Page 14 508652 VI. Application scope of patent 1 3 · If the device of the scope of patent application No. 12 is applied, the microwave drying chamber is provided with a gas input port, which can input the gas used to dilute the microwave drying chamber gas. 1 4 · The device according to item 13 of the scope of patent application, wherein the gas may be an inert gas. 15 · The device according to item 13 of the patent application scope, wherein the gas may be nitrogen (N 2). 16 · The device according to item 13 of the patent application range, wherein the gas may be argon (Ar). 17 · The device according to item 12 of the scope of patent application, wherein the microwave drying chamber is provided with a gas exhaust end. 18. The device according to item 12 of the patent application range, wherein the microwave drying chamber is provided with a liquid discharge end, which can be used to recover the condensed solution. 19 · The device according to item 12 of the patent application scope, wherein the ultrasonic sprayer further comprises a solution delivery pipe, an ultrasonic oscillator and a spray head. 2 0. The device according to item 12 of the scope of patent application, wherein the solution is isopropyl alcohol (IPA), or a group of isopropyl alcohol mixed with deionized water (DI water) mm Page 15 508652 6. Scope of patent application * to make. 2 1 — A method of wafer drying, the method includes at least the following steps: providing a wafer; spraying an ultrasonic solution onto the surface of the wafer; microwave heating the wafer to obtain a clean and dry wafer surface . 2 2 · The method according to item 21 of the scope of patent application, wherein the solution is selected from the group consisting of isopropyl alcohol (IPA) or a mixture of isopropyl alcohol and DI water. 2 3 · The method according to item 21 of the patent application range, wherein the solution spray can be generated by an ultrasonic sprayer. 24. The method according to item 21 of the patent application range, wherein the spraying working temperature is 10 ° C to 60 ° C. 25. The method of claim 21, wherein the spraying time is about 30 seconds to 300 seconds. ® 26. The method according to item 25 of the patent application range, wherein the preferred embodiment of the spray time is 60 seconds.

第16頁 508652 六、申請專利範圍 - 2 7 .如申請專利範圍第2 1項之方法，其中該微波加熱工作溫度約為5 0°C至9 0°C。 2 8 ·如申請專利範圍第2 1項之方法，其中該微波加熱時間約為3 0秒至3 0 0秒。 2 9 .如申請專利範圍第2 8項之方法，其中該微波加熱時間最佳之實施例為6 0秒。 3 (K如申請專利範圍第2 1項之方法，其中該超音波震 4 盪頻率範圍約為1. 0MHz至5. 0MHz。 3 1.如申請專利範圍第3 0項之方法，其中該超音波震盪頻率最佳之實施例為1. 63MHz。 3 2 .如申請專利範圍第2 1項之方法，其中該微波加熱頻率最佳之實施例為2. 45GHz。 3 3 .如申請專利範圍第2 1項之方法，其中該微波加熱功率範圍約為1 0 0 W至2 0 0 0 W。 ❶ 3 4 .如申請專利範圍第3 3項之方法，其中該微波加熱功率最佳之實施例為1 0 0 0 W 6Page 16 508652 VI. Patent Application Range-27. The method of item 21 of the patent application range, wherein the microwave heating working temperature is about 50 ° C to 90 ° C. 28. The method of claim 21, wherein the microwave heating time is about 30 seconds to 300 seconds. 29. The method according to item 28 of the scope of patent application, wherein the microwave heating time is the best in the embodiment of 60 seconds. 3 (K as the method of the 21st scope of the patent application, wherein the ultrasonic vibration 4 oscillating frequency range is about 1.0MHz to 5.0MHz. 3 1. As the method of the 30th scope of the patent application, the ultrasound The embodiment with the best sonic oscillation frequency is 1. 63 MHz. 3 2. The method according to item 21 of the patent application range, wherein the embodiment with the microwave heating frequency is 2. 45 GHz. The method according to item 21, wherein the microwave heating power ranges from about 100 W to 2000 W. ❶ 3 4. The method according to item 33 of the patent application range, wherein the microwave heating power is the best embodiment 1 0 0 0 W 6

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