TW499607B - Thin film transistor and liquid display device - Google Patents
Thin film transistor and liquid display device Download PDFInfo
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- TW499607B TW499607B TW088104407A TW88104407A TW499607B TW 499607 B TW499607 B TW 499607B TW 088104407 A TW088104407 A TW 088104407A TW 88104407 A TW88104407 A TW 88104407A TW 499607 B TW499607 B TW 499607B
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- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 239000007788 liquid Substances 0.000 title 1
- 239000010408 film Substances 0.000 claims abstract description 81
- 239000011229 interlayer Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 abstract description 7
- 230000010287 polarization Effects 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 5
- 239000012945 sealing adhesive Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000219422 Urtica Species 0.000 description 1
- 235000009108 Urtica dioica Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
修正
499607 _者號 8810MQ7 五、發明說明(1) [發明技術領域] 本發明係有關平坦化膜薄膜電晶體(Thin Fi lm Transistor簡稱TFT)及以TFT使用為切換元件之液晶顯示 裝置(Liquid Crystal Display 簡稱LCD)。 [習用技術] 近來,正在開發以使用多晶矽膜為能動層之TFT做為主 動矩陣(active ma tr i x )方式LCD之驅動元件,或晝素驅動 元件。 以下就習用TFT之LCD加以說明。 第6圖所示為習用畫素部TFT之平面圖。第7圖所示 使用TFT之LCD,沿第6圖C-C線之剖面圖。 如第6圖所示,晝素部TFT設在供給閘極信號之閘極作 號線G,與供給影像信號之汲極信號線j)的交差點附近。^ 源極連接顯示電極。 /、 兹依據第7圖說明TFT之構造。 在由石英破璃,無鹼,(alkali)玻璃等所形成之絕緣 =1上,依次形成鉻(Cr),鉬(M〇)等之高融點金屬所形土 甲極2,閑極絕緣膜3,及多晶石夕膜所形成之能動層4。 、在該能動層4,設有在閘極2上之通道7,及在通道7 在通道7上之停止層8予以罩幕並植入離子所形成t 源極5及汲極6。 K 次籍閘極絕緣膜3,能動層4及停止層8上之全面 將對二二、、2膜9,S1 N膜1 0及S 1 〇2膜11,以形成廣間膜1 2。並 、、w ;汲極6所設接觸孔以鋁A1等金屬予以填充,而形j
499607 修· _案號 88104407 五、發明說明(2) 曰 修正 汲極電極1 3。再全面以例如由有機樹脂等形成能使表面平 坦之平坦化膜15。然後,在對應於該平坦化膜15之源極5之 位置,形成以接觸孔並在平坦膜15上,形成以介經該接觸孔 而由沒極5及接觸ITO(Indium Tin Oxide)所成兼做;:及極電 極14的透明電極16。 在裝有如此製成之TFT之絕緣基板,及在裝有對向於該 基板1之電極(圖省略)等的對向基板17,其周邊以密封接着 劑1 8黏着,而在所形成之空隙充填以液晶1 9。 [本發明欲解決之問題]
然而在上述習用之TFT構造,由於在硬化時產生密封接 着劑之不純物或不純物離子,或與平坦化膜1 5相接之液晶 1 9中的水份或不純物離子,或介經密封部之剝落而浮起處 20而由外部進入水份,或平坦化膜丨5因接觸大氣而附着於 大氣中之水份荨附着於平坦化膜15表面,而使平坦化膜15 表面帶有電荷,因而使平坦化膜丨5或層間膜丨2,分別在其膜 之上下產生分極。
如此,即在TFT形成反通道(back channel),而有使TFT
之臨界電壓變化之缺點D
又,在將TFT使用於LCD時,如TFT之臨界電壓向增加之 方向變化,則TFT之導通(on)電流降低,產生使晝素常時輝 焭的輝點缺點。反之,如果向臨界電壓減少之方向變化,則 切離(〇 f f )電流增加,產生不能使畫素充份輝亮之滅點缺 陷。而不能獲得良好顯示。又,如果各τί?τ之臨界電壓參差 不均時,則有不能在顯示面上獲得均一之明亮顯示之缺
2002. 04.16. 005 第5頁
、發明說明(3) 本發明有鑑於上述習用缺點,而以可抑制TF T上平坦化 膜,或層間膜產生分極,而提供穩定之臨界電壓之TFT,減低 輝點等之缺陷,以獲得顯示面均勻明亮顯示之LCI)為目的。 [解決課題之手段] 本發明之TFT係在絕緣基板上,具備閘極電極;閘極絕 緣膜;具有通道之多晶矽膜;設在該通道上之停止絕緣膜; 層間膜;源極電極及汲極電極,平坦化膜以及透明電極之順 次裝備的薄膜電晶體。而於源極電極或汲極電極中之任一 電極延伸於通道上方之層間膜上,以及/或透明電極延伸至 通道上方而設於平坦化膜上。 本發明之LCD即係具備上述之薄膜電晶體。 [本發明之實施形態] 以下說明本發明之TFT。 第1圖表示本發明TFT之平面圖。第2圖表示沿第1圖中 A-A線之剖面圖。 如第1圖所示,在閘極信號線G與汲極信號線D交差點附 近,設有連接顯示電極16之TFT。 如第2圖所示,在石英玻璃,無鹼玻璃案所形成之絕緣 基板1上,依次形成由Cr,Mo等高融點金屬形成之閘極電極 2 ; Si N膜及Si 02膜形成之閘極絕緣膜3;以及多晶矽膜形成 之能動層4。 該能動層4,在閘極電極2上方之通道7,設有在其通道7 , 之兩侧植入離子所形成之源極5及汲極6。
C:\Program Files\Patent\310433. ptd 第 6 頁 499607 五、發明說明(4) 在通道7上,在植入離子以形成源極5及汲極6時,為使 離子不致進入通道7,設有由Si 〇2膜所形成之停止層8,做為 覆蓋通道7罩幕。 然後,在閘極絕緣膜3,能動層4及停止層8上之全面,依 次積層Si 〇2膜9, Si N膜10及Si〇2膜11,以形成層間膜12 〇又 於對應於汲極6而設在其層間膜12之接觸孔,以鋁A1等金屬 充填,形成汲極電極13。然後,在全面以例如有機樹脂,形 成平坦化膜1 5。在該平坦化膜1 5之對應於源極5位置形成 接觸孔,並形成以與源極5接觸之ιτο的透明導電材料所成 兼做源極電極14的透明電極之顯示電極16。 此時,顯示電極16如第1圖及第2圖所示,只少能將通、蓄 7予以覆蓋而形成之。 、 以上述方式,液晶中之水份或由密封接着劑之間隙渗 入之水份,即不會附着於通道上之平坦化膜丨5表面,可防^止 分極並抑制產生反通道。亦即,可穩定TFT之臨界電壓,減 少液晶顯示板顯示面内的輝度之參差不勻。 又,因為各顯示電極所供給電壓之顯示領域相同,即使 在顯示領域内某特定處(例如顯示板周圍)因為71^分極而 產生反通道,因各顯示領域在通道上方所設顯示電壓係 加相同電壓,在各顯示領域產生相同程度之反通道,所以 顯示領域之輝度可保均勻。 ’ 各 上述TFT使用於LCD時,如第3圖所示,TFT之構造係如 述第2圖所述,在通道上方之平坦化膜上配置顯示電極上 TFT構造。而LCD之構造,係將該含TFT之絕緣基板丨,及與該
499607 五、發明說明(5) 基板1對向之對向基板17之周圍,以密封接着劑18黏着,而 於兩基板1,1 7所形成之空隙,充填以液晶19。 於是,可防止在層間膜,平坦化膜表面之蓄積電荷,或 於平坦化膜之上下分極。因使用臨界電壓穩定之TFT,可減 低輝點等之缺陷,而得顯示面可均勻明亮顯示之LCD。 [第2實施形態] 以下說明本發明第2實施形態。 第4圖表示本發明第2實施形態之TFT平面圖。第5圖表 示沿第4圖中B-B線之剖面圖。 如第5圖所示,第2實施形態TFT之構造與第1實施形態 所示至層間膜12為止之構造相同。 其與第1實施形態不同之點,係在第丨實施形態之顯示 電極16至少覆蓋通道7,而本實施形態則為至少沒極電極13 覆蓋通道7。 汲極電極13係在源極6上之接觸孔,以A1充填形成時, 使之覆蓋通道7而延伸以形成之。 如此,再依序形成平坦化膜15及顯示電極16,以完成 TFT ° 如上所述,則即使液晶中之水份或密封接着劑之間隙 滲入水份附着於通道上之平坦化膜15表面而產生分極,因 為由覆盡通道7而形成之波極電極13,可防止層間膜12產生 分極,並抑制反通道之產生。 又,在顯示領域,因各汲極電極所供給之電壓相同,即 使顯示領域内某特定處(例如顯示板周圍)因TFT分極而產
499607 五、發明說明(6) 生反通道,因為各顯示領域可由設置於通道上方之汲極電 極印加以相同電壓,產生相同程度之反通道,所以也可在顯 示領域内看見均勻明亮之顯示。 亦即,可減少液晶顯示板顯示面輝度之參差不齊,使 TFT之臨界電壓穩定。 又,在本實施形態,汲極電極13,係在通道7上以覆蓋通 道情形而形成。所以,使源極電極1 4與沒極電極1 3,同時以 A1形成。亦可在通道7上延伸形成源極電極14。此時,顯示 電極16與鋁A1所形成之源極電極14係相接觸。 又,本實施形態TFT應用於LCD時之構造,為例如將第3 圖構成LCD之TFT,以第4圖所示TFT置換之構造。 上述各實施形態係就LCD顯不領域之晝素部之tft予以 說明,但本發明並非以此為限定,亦可適用於對顯示領域供 給掃描信號或影像信號的顯示領域周邊驅動電路中之 八 TFT。此時,I T0膜設在驅動電路中TFT上之層間膜上。此 時,ΙΤ0膜之電位可為浮動(floating),亦可與對向基板上 之對向電極相同電位。 在此情形下,與畫素部之TFT同樣,TFT之臨界 會變化,可穩定供給各信號至顯示領域,獲得良好 ^不 前面各實施形態係就,TFT含有2個閘極的雔4不。 (double gate)構造做說明。但只扪個閘極的所^雙^閘極 (single gate)構造,亦可得相同之本發明效明早閘極 [發明效果] ° 依本發明可防止層間膜之上下分極, 4抑制反通
499607 案號 88104407 -91 啤 7曰 修正 五、發明說明 (7) 4 ?::ί: 道之產生, 獲 得 穩 定臨界電 壓· 之TFT 及 減 低輝點 等 之 缺 獲得顯示面内均勻明亮顯示之LCD ( 3 [圖 式簡 單 說 明 ] 第1 圖 為 表 示 本發明實 施形態之TFT 之平面 圖 〇 第2 圖 為 本發 明實施形 態TFT之 剖 面 圖 〇 第3 圖 為 本 發 明實施形 態LCD之 剖 面 圖 〇 第4 圖 為 本 發 明實施形 態TFT之 平 面 圖 〇 第5 圖 為 本發 明實施形 態TFT之 剖 面 圖 〇 第6 圖 為 習 用 TFT之平面圖 〇 第7 圖 為 習 用LCD之剖面圖 〇 [符 號說 明 ] 1 絕 緣 基板 2 閘 極 3 閘 極 絕緣膜 4 能 動 層 5 源 極 6 汲 極 7 通 道 8 停 止 層 9、 11 Si 〇2 ) m 10 Si N ) m 12 層 間 膜 13 汲 極 電 極 14 源 極 電極 15 平 坦 化 膜 16 顯 示 電極 17 對 向 基 板 18 密 封 接著劑 19 液 晶 20 浮 起 處
310433.ptc 第10頁 2002. 04.16.010
Claims (1)
- 一種薄膜電晶體,其係 極,閘極絕緣膜,具有、、f 、、/板上,依次具備閘極電 ^ β μ t、之多晶矽膜,設於該通道上之 切,源極電極錢 ^ 的任—電極W前述源極電極或汲極電極中 上為特徵者。 、、上方延伸而故置於前述層間膜 3· 極Η薄屯曰曰體,其係在絕緣基板上’依次具備閘極電 ,/,絕緣膜,具有通道之多晶矽膜,設在該通道上之 :絶緣膜,層間膜,源極電極及汲極電極,平坦化膜及 、月%極之薄膜電晶體;而前述透明電極係向前述通道 上方延伸而設置在前述平坦化膜上為特徵者。 一種薄膜電晶體,其係在絕緣基板上,依次具備閘極電 ,,閘極絕緣膜,具有通道之多晶矽膜,設在該通道上之 如止絕緣膜,層間膜,源極電極及汲極電極,平坦化膜及 透明電極之薄膜電晶體;而前述源極電極之 任-電極係向前料道上方延伸㈣於前膜上, 同時前述透明電極係向前述通道上方延伸而設於前述 平坦化膜上為特徵者。 4· 一種液晶顯示裝置,其特徵為具備申請專利範圍第丨至_3 項中任/項所述之薄膜電晶體者。310433.ptc 第1頁 2002. 04.16· 012
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JP10078771A JPH11274509A (ja) | 1998-03-26 | 1998-03-26 | 薄膜トランジスタ及び液晶表示装置 |
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JP (1) | JPH11274509A (zh) |
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US6583471B1 (en) | 1999-06-02 | 2003-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having first and second insulating films |
JP4677654B2 (ja) * | 2000-04-19 | 2011-04-27 | 日本電気株式会社 | 透過型液晶表示装置及びその製造方法 |
EP1187220A3 (en) * | 2000-09-11 | 2007-10-10 | Kabushiki Kaisha Toshiba | MOS field effect transistor with reduced on-resistance |
US7440980B2 (en) * | 2001-04-03 | 2008-10-21 | Qnx Software Systems Gmbh & Co. Kg | Computer file management system |
US7433900B2 (en) * | 2001-04-03 | 2008-10-07 | Qnx Software Systems Gmbh & Co. Kg | Custom filesystem having file mappings to files of a real filesystem |
US7047257B2 (en) * | 2001-04-03 | 2006-05-16 | Qnx Software Systems | Computer file management system |
TWI246197B (en) * | 2001-09-27 | 2005-12-21 | Prime View Int Corp Ltd | TFT LCD structure containing conductive balls and the manufacturing method thereof |
US20040252191A1 (en) * | 2003-06-13 | 2004-12-16 | Davis J. Roger | Automobile entertainment apparatus display with integrated antenna |
KR101080356B1 (ko) * | 2003-10-13 | 2011-11-04 | 삼성전자주식회사 | 박막 트랜지스터, 박막 트랜지스터 표시판 및 표시 장치 |
WO2007091191A1 (en) * | 2006-02-10 | 2007-08-16 | Koninklijke Philips Electronics N.V. | Large area thin film circuits |
TW200741383A (en) * | 2006-03-29 | 2007-11-01 | Koninkl Philips Electronics Nv | Setup for storing data in a holographic storage medium |
CN104122721B (zh) * | 2013-06-28 | 2017-02-08 | 深超光电(深圳)有限公司 | 像素结构 |
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JPS5599762A (en) * | 1979-01-26 | 1980-07-30 | Hitachi Ltd | Semiconductor memory device |
EP0499979A3 (en) * | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
JPH0572562A (ja) * | 1991-09-18 | 1993-03-26 | Seiko Epson Corp | アクテイブマトリクス型表示装置 |
JP2924506B2 (ja) * | 1992-10-27 | 1999-07-26 | 日本電気株式会社 | アクティブマトリックス型液晶表示装置の画素構造 |
JP3281700B2 (ja) | 1993-12-22 | 2002-05-13 | 三菱電機株式会社 | 半導体装置 |
JP3377853B2 (ja) | 1994-03-23 | 2003-02-17 | ティーディーケイ株式会社 | 薄膜トランジスタの作製方法 |
JPH07302912A (ja) * | 1994-04-29 | 1995-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
JPH08122768A (ja) * | 1994-10-19 | 1996-05-17 | Sony Corp | 表示装置 |
KR100204071B1 (ko) * | 1995-08-29 | 1999-06-15 | 구자홍 | 박막트랜지스터-액정표시장치 및 제조방법 |
JP3604106B2 (ja) | 1995-09-27 | 2004-12-22 | シャープ株式会社 | 液晶表示装置 |
JP3409542B2 (ja) | 1995-11-21 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
JP3784478B2 (ja) * | 1995-11-24 | 2006-06-14 | 株式会社半導体エネルギー研究所 | 表示装置及び表示装置の作製方法 |
KR100186548B1 (ko) | 1996-01-15 | 1999-05-01 | 구자홍 | 액정표시장치의 구조 |
JP3439014B2 (ja) * | 1996-02-29 | 2003-08-25 | 三洋電機株式会社 | 液晶表示装置 |
JP3535307B2 (ja) | 1996-03-15 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3708637B2 (ja) | 1996-07-15 | 2005-10-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3669082B2 (ja) * | 1996-10-17 | 2005-07-06 | ソニー株式会社 | 液晶表示素子用薄膜トランジスタアレイ |
US5879959A (en) | 1997-01-17 | 1999-03-09 | Industrial Technology Research Institute | Thin-film transistor structure for liquid crystal display |
-
1998
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US6365915B1 (en) | 2002-04-02 |
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