經濟部智慧財產局員工消費合作社印製 494424 A7 ___B7___ 五、發明說明（1 ) 本發明係有關場發射材料及裝置，且特別有關，但不 限於製造可定址場電子發射陰極行列之方法。本發明之較 宜實施例目的在提供用以製造多電極控制及聚焦結構之低 製造成本方法。 精於本藝之人士明瞭實際場發射裝置，尤其是顯示器 之關鍵在於可由低電壓控制發射電流之安排。目前，此方 面之工藝大部份係有關尖端基礎之射極，即使用原子尖銳 之微尖端作爲場發射源之結構。 有相當之先行技藝與尖端基礎之射極有關。本藝中之 主要工作者置具有孔（閘）小於一微米之一電極於離開每 一單個發射尖端之處，俾可由使用所施加之1 〇 〇 V或以 下之電位達成所需之高電場（此等射極稱爲閘控行列）。 第一實際達成此點由工作於加州Stanford硏究院之C.A Spindt說明（應用物理雜誌，3 9，7，3 5 0 4 — 3505頁（1968)) °Spindt之行列使用鉬 發射尖端，此使用自我蔽罩技術由真空蒸發金屬於S i基 體上之一 S i〇2層之圓筒形凹口中製成。Spmdt技術之許 多改變及改進說明於科學及專利文件中。 另一重要方法爲製造閘控行列，使用矽微工程。目前 有使用此技術製造場電子發射顯示器，引起世界許多機構 興趣。亦有許多改變說明。 所有尖端基礎之發射系統之一主要問題爲其易受離子 轟擊，高電流上歐姆熱，及由裝置中之電崩潰所產生之大 災害所損壞。製造大面積裝置因難且昂貴。而且，爲獲得 本紙遣犬度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^ --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 494424 A7 B7 五、發明說明（2 ) 低控制電壓，由尖端及其所屬之閘孔所構成之基本發射元 件需約爲一微米或以下之直徑。此結構之製造需要半導體 式製造技術，其所屬之成本結構高。而且’當需要大面積 時’需使用昂貴及緩k之步驟及重覆裝備。 在約1 9 8 5 ’發現磧石薄膜可由氫一甲烷大氣生長 於加熱之基體上’以提供大面積之場射極。 在1 9 8 8，S Ba」ic及R V Latham ( ”物理雜誌，應 用物理”，卷 2 1 ，2 0 0 — 2 0 4 ( 1 9 8 8 ))說明 一低成本複合物’此產生高密度金屬-絕緣體-金屬-絕 緣體-真空（MIMIV )發射地點。該複合物具有導電性微 粒分散於環氧樹脂中。該塗層由標準旋塗技術施敷於表面 上。 遠較以後（1 9 9 5 )，Tuck，Taylor，及 Latham ( G B 2 3 0 4 9 8 9 )改善以上射極，以無機絕緣體取 代環氧樹脂，此提高穩定性，並能操作於密封之真空裝置 中〇 此大面積射極之最佳之例能在低於1 0 V V I □ m - 1 之電場上產生有用之電流。在本說明之範圍中，一^大面積 場射極爲由其組成，微結構，工函數，其他性質，在可合 理產生於平面或***面表面處之微電場上（即不使用原子 銳利之微尖端作爲發射地點）發射有用之電子流之任何材 料。 電子光學分析顯示控制大面積射極所需之特色大小幾 乎較之尖端基礎之系統幾乎大一幅階。Zhu等（美專利 本紙尺度適用中國國家標準（CNS)A4規格(210 X 297公釐) ^ ' -------------------訂---------線 ill*· (請先閱讀背面之注意ί項再填寫本頁) 494424 經濟部智慧財產局員工消費合作社印製 A7 B7 _ 五、發明說明f ) 5，283，501)說明此種結構，具有磧石基礎之射 極。Moyer (美專利5，473，218)申請一電子光 學改善之專利，其中，一導電性層置於大面積射極上，以 防止發射通過閘孔而進入閘絕緣體及聚焦電極。此並非新 結構之構想，且在光電上等於多世紀以來熱離子裝置中所 用之裝置。例如，Winsor (美專利3,500，1 10 )說明在陰極 電位上之一陰影柵極，用以防止不需要之電子截交於較陰 極爲正之電位上之一柵極組。較後一些，Miram (美專利 4，09 6，40 6)對此改善，以產生一黏合之柵極結 構，其中，陰影柵極及控制柵極由一固體絕緣體隔開，並 與陰極接觸設置。Moyer之安排僅以等效之大面積場發射 器取代Miram結構中之熱離子陰極。然而，此結構有用， 其主要挑戰爲在低成本及大面積上之構造方法。本發明之 較佳實施例在此方面對本藝有貢獻。 申請者之專利GB2 330 687B說明一種製造 場發射顯示器（F E D )陰極平面之低製造成本方法，使 用一大面積場射極。附圖之圖1 a及1 b顯不由本法所製 造之陰極平面之結構，其中，一基體1 0 (通常爲玻璃） 由陰極軌跡1 1 ，射極層1 2，聚焦柵極軌跡1 3，閘絕 緣體1 4，及閘極軌跡1 5覆蓋。所有此等軌跡及層由低 解像裝置，例如印刷沉積。上表面然後塗以光阻層，此經 曝光及顯影，以打開孔1 6於光阻層上，界定射極胞之直 徑。然後使用不同蝕刻之一自我對齊方法，以製造射極胞 ，並露出射極層1 2。設定閘電極1 7較射極層1 2爲正 本紙痕尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝-------—訂--------- {請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 494424 A7 B7 五、發明說明（4 ) ，導致發射電子17進入裝置中。 雖本發明較之先行技藝具有許多優點，但此最適用於 具有表面粗糙度遠小於閘絕緣層之厚度之射極層。 許多所謂大面積射極包含微粒，此構成射極本身或爲 複合射極之一部份，在此，其一角色在集中微電場。此式 射極之例說明於申請者之說明書G B 2 3 3 2 0 8 9及 G B 2 3 3 0 687。附圖之圖2 a顯示GB2 33 2089中 所述之此一射極之一典型結構，其中，一基體2 1 0 (通 常爲玻璃）具有一導電性層2 1 1塗以置於絕緣媒體 2 1 3內之導電性微粒2 1 2。在施加電場時，導電性通 道2 1 4形成，此輸送並”加熱”通過其中之電子，俾電 子在2 1 5處發射至真空中。就”通道”或”導電性通道 ”一辭，吾人意指絕緣體之一區域，在此，其性質普通由 某形成過程，包括電荷注射或熱局部修改，此修改方便電 子自導電性背部接觸點注射進入絕緣體中，俾電子可經由 其獲得能量移動，並發射通過表面位能障壁而進入真空中 。在結晶固體中，該注射可直接進入傳導帶，或在非晶質 材料之情形，在可跳躍傳導之能階上。爲獲得最佳性能， 在微粒上下之絕緣層之厚度應較之微粒之幅度爲薄。在此 需求下，射極表面傾向於具有與微粒幅度相同階層之粗糙 度。普通微粒幅度在數微米範圍。 附圖之圖2 b顯示一示範之情形，在此，使用具有2 微米微粒之一射極於一 8微米直徑之射極胞中，構製於一 標稱4微米厚之閘絕緣體中。該層狀結構如下：基體 本紙择尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^ -------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 494424 A7 B7___ 五、發明說明f ) 2 1 0 (通常爲玻璃），導電性陰極軌跡2 1 1 ，導電性 (請先閱讀背面之注意事項再填寫本頁) 微粒227在絕緣媒體228中，聚焦柵極軌跡222， 閘絕緣層2 2 3，及閘極軌跡2 2 4。射極胞開口 2 2 5 剛露出一可能之射極2 2 6。自裝置作用之遠景觀之，此 例可滿意使用於例如一 F E D中，因爲顯示器之閘極及陽 極間之高電場傾於拉直電子軌道。 附圖之圖2 c顯示發生遠低之滿意，其中，一大微粒 及其所屬之絕緣塗層2 3 0中斷閘極結構，以形成二可能 發射地點。發射地點2 3 1良好，因爲僅當閘電極2 2 4 在”通”情形時方發射電子2 3· 2。可能之發射地點 2 3 3出現一重大問題，因爲此在閘極及陽極間之d C電 場之影響下，會發射連續及無控制之電流。在一顯示器中 ，此會產生一永久亮點及一刮傷之板。 吾人想到，如可先製造由可產生光滑薄膜之材料所製 之電極及閘極結構，並加上含有微粒之射極層，作爲最後 操作，則爲此等裝置所非常需要。 經濟部智慧財產局員工消費合作社印製 現移至附圖之圖3 a，Geis等（真空科學技術雜誌， 814 (3)五月/六月1996)說明一技術，此包括 製造一閘控結構，具有一閘電極3 〇 3置於一二氧化矽層 3 0 2上’此生長於一^導電性基體3 0 0上。射極胞 3 0 1由標準半導體製造方法構製。含有磧石微粒之一漿 體3 0 5使用一橡皮刷帚3 0 6壓進空射極胞3 0 4中。 經裝塡之組件在還原大氣中燒製至1 〇 8 0 °C，以蒸發黏 合劑，並形成一緊湊體3 2 0，如顯示於附圖之圖3 b， 本紙请尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） ^- 494424 A7 B7 五、發明說明（6 ) 磧石及矽間具有良好之電及機械接觸。可加鎳於漿體中， 以方便電接觸。最後組件經電漿處理，及然後處理，以降 低親電子性。Ge1S說明雖該結構發射良好，但有非常大之 閘極電流。附圖之圖3 c顯示此可能當電壓3 3 2及 3 3 1分別施加於閘極3 0 3及陽極3 3 0上時，由流過 該緊湊體及直接發射至閘極3 3 4之二電流所產生。此雜 散電流可較所需之發射電流3 3 3爲大。吾人之觀點爲此 結果爲此方法所不可避免，因爲磺石微粒傾於抓住射極胞 之側壁。另一問題爲發射碎屑3 3 5留於閘極頂上，在此 產生無控制之電流3 3 6。過去提及使用噴濺或電泳沉積 法，但無詳細提出。 〇anroc (美專利5 ，8 3 6 ，7 9 6 )說明使用電泳 法，以細磧石微粒射極塗敷微尖端射極，俾加強發射。使 用由電鍍沉積一金屬添加劑，以提供磺石及金屬微尖端間 之良好電接觸。Danroc僅有關微尖端射極。Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 494424 A7 ___B7___ V. Description of the Invention (1) The present invention is related to field emission materials and devices, and is particularly relevant, but not limited to the method of manufacturing addressable field electron emission cathodes. A preferred embodiment of the present invention is to provide a low manufacturing cost method for manufacturing a multi-electrode control and focusing structure. Those skilled in the art understand that the key to actual field emission devices, especially displays, is that the emission current can be controlled by low voltage. At present, most of the processes in this area are related to the emitter of the sharp foundation, that is, the structure that uses the sharp microtip of the atom as the field emission source. There are quite a few advanced skills related to cutting-edge emitters. The main worker in the art places an electrode with a hole (gate) less than one micron away from each single emitting tip, and the required high electric field can be achieved by using an applied potential of 1000V or less ( These emitters are called gated ranks). The first to achieve this was explained by CA Spindt working at the Stanford Research Institute in California (Journal of Applied Physics, 39, 7, 3 5 0 4-3505 pages (1968)) ° Spindt uses molybdenum emission tips, this use The self-shielding technology is made by vacuum evaporating metal in a cylindrical recess in a Si02 layer on the Si substrate. Many changes and improvements to Spmdt technology are described in scientific and patent documents. Another important method is to manufacture gated ranks, using silicon micro-engineering. This technology is currently used to manufacture field electron-emitting displays and has attracted interest from many institutions around the world. There are also many changes explained. One of the main problems of all cutting-edge-based launch systems is their vulnerability to ion bombardment, ohmic heat at high currents, and damage caused by major disasters caused by electrical collapse in the device. Manufacturing large-area devices is difficult and expensive. In addition, in order to obtain the degree of dog dispatch, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable. ^ -------------------- Order ---- ----- Line (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 494424 A7 B7 V. Description of the invention (2) Low control voltage, by the tip and its gate The basic emitting element formed by the hole needs to have a diameter of about one micrometer or less. The manufacture of this structure requires semiconductor manufacturing technology, and its cost structure is high. And 'when a large area is needed', expensive and slow steps and repeated equipment are required. It was found at about 198 5 'that the vermiculite film can be grown from a hydrogen-methane atmosphere on a heated substrate' to provide a large area field emitter. In 1898, S Ba "ic and RV Latham (" Journal of Physics, Applied Physics ", Vol. 21, 2 0 — 2 0 4 (1 9 8 8)) illustrates a low cost complex 'this produces high Density metal-insulator-metal-insulator-vacuum (MIMIV) emission site. The composite has conductive particles dispersed in an epoxy resin. The coating is applied to the surface by standard spin coating techniques. Much better than the future (1 995), Tuck, Taylor, and Latham (GB 2 3 0 4 9 8 9) to improve the above emitter, replace the epoxy resin with an inorganic insulator, which improves stability and can be used in sealing The best example of this large-area emitter in a vacuum device is that it can produce a useful current in an electric field below 10 VVI □ m-1. In the scope of this description, a large-area field emission is composed of its microstructure, work function, and other properties in a micro-electric field that can reasonably be generated on a plane or near-plane surface (that is, without using atomic sharp The tip acts as the launch site) any material that emits a useful electron stream. Electro-optical analysis shows that the characteristic size required to control large-area emitters is almost an order of magnitude larger than that of cutting-edge systems. Zhu et al. (U.S. patent paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^ ------------------- Order ----- ---- Line ill * (Please read the note on the back first and then fill out this page) 494424 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 _ V. Description of Invention f) 5,283,501) Explain this This kind of structure has a vermiculite-based emitter. Moyer (U.S. Patent No. 5,473,218) filed a patent for improved electronic optics, in which a conductive layer was placed on a large area emitter to prevent emissions from entering the gate insulator and focusing electrode through the gate hole. This is not an idea of a new structure and is optoelectronically equivalent to the devices used in thermionic devices for centuries. For example, Winsor (U.S. Patent 3,500, 1 10) describes a shadow grid on the cathode potential to prevent unwanted electrons from intercepting a grid set on a more positive and more positive potential. Later, Miram (U.S. Patent No. 4,09 6,40 6) improved this to produce a bonded gate structure, in which the shadow gate and the control gate are separated by a solid insulator and arranged in contact with the cathode. . Moyer's arrangement replaced the thermionic cathodes in the Miram structure with equivalent large-area field emitters only. However, this structure is useful, and its main challenge is the construction method in low cost and large area. The preferred embodiments of the present invention contribute to the art in this regard. The applicant's patent GB2 330 687B describes a low-cost manufacturing method for manufacturing the cathode plane of a field emission display (FED) using a large area field emitter. Figures 1a and 1b of the accompanying drawings show the structure of a cathode plane manufactured by this method, in which a substrate 10 (usually glass) consists of a cathode track 1 1, an emitter layer 12, and a focusing grid track 1 3 , Gate insulators 14 and gate track 15 are covered. All these tracks and layers are deposited by low-resolution devices, such as printing. The upper surface is then coated with a photoresist layer, which is exposed and developed to open holes 16 in the photoresist layer to define the diameter of the emitter cell. A self-alignment method using one of different etches is then used to fabricate the emitter cell and expose the emitter layer 12. Set the gate electrode 1 7 to the emitter layer 12 as the original paper mark. Applicable to China National Standard (CNS) A4 (210 X 297 mm) ----------- install ------ -—Order --------- {Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 494424 A7 B7 V. Description of the invention (4), which causes the emission of electrons 17 Into the device. Although the present invention has many advantages over the prior art, it is most suitable for an emitter layer having a surface roughness much smaller than the thickness of the gate insulating layer. Many so-called large-area emitters contain particles, which constitute the emitter itself or are part of a composite emitter. Here, one of its roles is to concentrate the micro-electric field. Examples of this type of emitter are described in the applicant's instructions G B 2 3 3 2 0 8 9 and G B 2 3 3 0 687. Figure 2a of the accompanying drawings shows a typical structure of such an emitter described in GB2 33 2089, wherein a substrate 2 1 0 (usually glass) has a conductive layer 2 1 1 coated on an insulating medium 2 Conductive particles in 1 3 2 1 2. When an electric field is applied, a conductive channel 2 1 4 is formed, which transports and "heats" the electrons passing through it, and the plutonium electrons are emitted into the vacuum at 2 1 5. In terms of "channel" or "conducting channel", I mean an area of an insulator. Here, its properties are generally modified by a formation process, including charge injection or local thermal modification. This modification facilitates electrons from the conductive back contact point. Injected into the insulator, the plutonium electrons can gain energy to move through it and emit through the surface energy barrier into the vacuum. In crystalline solids, the injection can go directly into the conduction band, or in the case of amorphous materials, at energy levels that can jump through conduction. For best performance, the thickness of the insulating layer above and below the particles should be thinner than that of the particles. With this requirement, the emitter surface tends to have the same level of roughness as the particle amplitude. Normal particles have amplitudes in the range of a few microns. Figure 2b of the accompanying drawings shows an exemplary case where an emitter electrode having one micrometer of 2 micron particles in an 8 micrometer diameter emitter cell is constructed in a nominal 4 micrometer thick gate insulator. The layered structure is as follows: The size of the base paper is selected according to the Chinese National Standard (CNS) A4 (210 X 297 mm) ^ ------------------- Order --- ------ Line (Please read the precautions on the back before filling this page) 494424 A7 B7___ V. Description of the invention f) 2 1 0 (usually glass), conductive cathode track 2 1 1, conductive (please Read the notes on the back before filling this page.) In the insulating medium 228, the particles 227 focus on the gate track 222, the gate insulating layer 2 2 3, and the gate track 2 2 4. Emitter cell opening 2 2 5 Just exposed a possible emitter 2 2 6. This device can be used satisfactorily in, for example, an F E D device, since the high electric field between the display's gate and anode is inclined to straighten the electron orbit. Figure 2c of the accompanying drawings shows that the occurrence of far lower satisfaction, in which a large particle and its associated insulating coating 230 break the gate structure to form two possible emission sites. The emission point 2 3 1 is good because the electrons 2 3 · 2 are emitted only when the gate electrode 2 2 4 is in the "on" condition. A possible problem arises at the possible emission location 2 3 3, because under the influence of the d C electric field between the gate and anode, a continuous and uncontrolled current is emitted. In a display, this creates a permanent bright spot and a scratched board. I think that if the electrode and gate structure made of a material that can produce a smooth film can be manufactured first, and an emitter layer containing particles is added as a final operation, it is very necessary for these devices. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, Figure 3a of the attached drawings, Geis et al. (Journal of Vacuum Science and Technology, 814 (3) May / June 1996) illustrate a technique, which includes manufacturing a gated structure A gate electrode 3 03 is placed on a silicon dioxide layer 3 02 'this is grown on a conductive substrate 300. The emitter cell 3 0 1 is constructed by a standard semiconductor manufacturing method. A slurry containing one of the vermiculite particles 3 0 5 was pressed into the air emitter cell 3 0 4 using a rubber broom 3 0 6. The assembled components are fired in a reducing atmosphere to 1080 ° C to evaporate the adhesive and form a compact body 3 2 0, as shown in Figure 3b of the attached drawing. (CNS) A4 specification (210 X 297 meals) ^-494424 A7 B7 V. Description of the invention (6) There is good electrical and mechanical contact between vermiculite and silicon. Nickel can be added to the slurry to facilitate electrical contact. The final assembly is plasma treated and then processed to reduce electrophilicity. Ge1S shows that although the structure emits well, it has a very large gate current. Figure 3c of the accompanying drawings shows that when voltages 3 3 2 and 3 3 1 are applied to the gates 3 0 3 and 3 3 0 respectively, they flow through the compact and directly emit to the gates 3 3 4 Two currents are generated. This stray current may be larger than the required emission current 3 3 3. My opinion is that this result is unavoidable for this method, because the sulfonite particles are inclined to grasp the side wall of the emitter cell. Another problem is that the emission debris 3 3 5 remains on the top of the gate, where an uncontrolled current 3 3 6 is generated. The use of sputtering or electrophoretic deposition methods has been mentioned in the past but has not been proposed in detail. 〇anroc (U.S. Patent Nos. 5, 8 36, 7 9 6) describes the use of electrophoresis to coat micro-tip emitters with fine vermiculite particulate emitters to enhance emission. A metal additive is deposited by electroplating to provide good electrical contact between the sulphite and the metal microtips. Danroc is only concerned with microtip emitters.
Jin (美專利5，8 1 1，9 1 6 )係有關場發射顯示 器，使用非常特定型式之磧石材料。]in在過去提及使用電 泳法，以沉積此材料（此本身爲發射材料）之微粒於基體 上，但無詳細提出。 本發明之較宜實施例之目的在提供改良之場發射結構 ，其中，含有微粒之複合場電子射極當場構製於先行製造 之電極構造內。該方法宜包含使用電泳法，以最佳置微粒 於電極結構內。射極結構可使用於裝置中，此包含：場電 子發射顯示板；高功率脈波裝置，諸如電子MASERS及掁 本紙泉尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---------線 ι 經濟部智慧財產局員工消費合作社印製 494424 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（7 ) 動陀螺儀；交叉場微波管，諸如C F A ;線性束管，諸如 閘流管；快閃X射線管；觸發火花隙及有關之裝置；消毒 用之大面積X射線源；真空計；太空航具用之離子推進器 ;粒子加速器；電燈：臭氧化器；及電漿反應器。 依據本發明之一方面，提供一種製造複合大面積場電 子射極於至少部份穿孔之一電極結構內之方法，該方法包 括步驟： a )設置一蔽罩層於該電極結構之所選區域上，以界 定該電極結構之蔽罩區域及無蔽罩區域； b )在步驟a )之後，施敷至少一第一微粒構成部份 及一第二構成部份於電極結構之無蔽罩區域中，俾第一構 成部份之微粒選擇受引導至無蔽罩區域之所需位置；及 在步驟b )後： c)移去所選區域上之蔽罩層連同蔽罩層上之該構成 部份之任何逸散量；及 d )處理該等構成部份，以製造大面積場電子發射地 點於電子結構之所需位置中。 步驟d )宜在步驟c )之後實施。 材料微粒可在步驟b )中施加，成爲在電絕緣材料或 其化學先質中之溶液或膠態分散體中之多個導電性微粒， 及步驟d )之程序導致導電性微粒被塗覆於電絕緣材料中 0 步驟d )之程序可包括移去溶液或分散體之短效構成 部份。 本紙禮S:度適用中國國家標準（CNS)A4規格（210 X 297公釐） :10 - ---------------------訂---------線 C請先閱讀背面之注意事項再填寫本頁) 494424 A7 B7 8 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 該溶液或分散體之液體構成部份中可溶解電絕 之一化學先質，及該方法可包含由熱，紫外光，或 施分解該先質，以形成該電絕緣材料。 該先質可爲凝膠之形態。 該先質可包含一可溶聚合物。 微粒可包含導電性微粒，預先塗以電絕緣材料。 電絕緣材料可包含二氧化矽。 步驟（b)可包含經由孔噴濺施敷該第一及第 部份於電極結構之所選區域上，該等孔設置於電極 ，且引導第一構成部份之微粒選擇至所需之位置。 該等孔可由電極結構之部份界定，此等覆蓋電 中所構製之凹口上，俾第一及第二構成部份受選擇 凹口之底部而非其壁上。 該等凹口可具有側壁，向內朝向凹口底部傾斜。 每一凹口宜由濕蝕刻法構製，此在覆蓋各別凹 極結構之各別部份下方形成一下切。 電絕緣材料可爲膠態或細微粒分散體之形狀， 後由熱作用燒結一起，以形成固體相。 以上方法可包括步驟：施敷一金屬於微粒上， 氧化該金屬，以形成電絕緣材料。 該金屬亦可施敷於陰極軌跡上。 該金屬可由電鍍法施敷。 微粒宜爲導電性微粒，此可包含石墨。 步驟d )之程序可導致導電性微粒各具有一層 緣材料 其他措 二構成 結構上 極結構 引導至 口之電 此等其 且其後 電絕緣 ---------------------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 本紙奋楚度適用中國國家標準（CNS)A4規格（210 X 297公釐） 494424 A7 B7 五、發明說明（9 ) (請先閱讀背面之注意事項再填寫本頁> 材材沉積於導電性表面及微粒間之一第一位置中，及/或 微粒及電極結構所置之環境間之一第二位置中，俾至少一 些微粒在第一及/或第二位置處形成電子發射地點。 以上方法可包括步驟：加另外之層於導電性微粒及/ 或電絕緣材料層上，以加強電子發射。 以上方法可包括在步驟b )及c )間之固化或部份.固 化之另外步驟。 該處理步驟d )可包含固化。 該電極結構宜具有預先製造之射極胞，及所需之位置 在射極胞內。 所需之位置宜各包含一孔之底部。 所需之位置各宜在一導電性表面處。 微粒可在步驟b )中施加於一載體中，及該方法可包 括其後移去電極結構中多餘之載體之步驟。 多餘之載體可由橡皮刷帚或類似裝置移去。 微粒之選擇施放宜由電泳法達成。 該蔽罩層宜在步驟（a )中設置，作爲構製該電極結 構之至少一部份之程序之一部份，在實施步驟（b )之前 經濟部智慧財產局員工消費合作社印製 〇 該第二構成部份宜爲電絕緣體之先質，此在步驟（d )中構製。 本發明延伸至依本發明之任一先前層面之方法製造一 場電子射極，。 在另一方面·本發明提供一種場電子發射裝置’包含 本紙摄於度適用中國國家標準（CNS)A4規格（210 X 297公餐i 經濟部智慧財產局員工消費合作社印製 494424 A7 B7___ 五、·發明說明（1〇 ) 此一場電子射極，及用以使射極接受電場，以導致射極發 射電子之裝置。 此一裝置可包含一基體具有場電子射極之一行列之射 極小塊，及控制電極具有對齊之孔行列，電極由絕緣層支 持於射極小塊上。 該等孔宜爲槽形。 以上裝置可包含一電漿反應器，電冕放電裝置，靜音 放電裝置，臭氧化器，電子源，電子槍，電子裝置，X射 線管，真空計，充氣裝置，或離子推進器。 場電子射極可供應該裝置操作之總電流。 場電子射極可供應該裝置之開動，觸發，或準備電流 〇 以上裝置可包含一顯示裝置。 以上裝置可包含一電燈。 電燈大致爲平板形。 射極可經一鎭流電阻器連接至電驅動裝置，以限制電 流。 鎭流電阻器可用作每一發射塊下之電阻墊。 發射材料及/或磷質可塗敷於導電性軌跡之一或多於 一度空間行列上，該等軌跡安排由電子驅動裝置定址，以 產生一掃描發光之線。 此一裝置可包含該電子驅動裝置。 場射極可置於氣體，液體，固體，或真空之環境中。 以上裝置可包含一陰極，此爲光半透明，且與一陽極 --------------------1--------- (請先閱讀背面之注意事項再填寫本頁) 本紙嚷决：度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13 - 494424 經濟部智慧財產局員工消費合作社印製 A7 _ _ _ B7_ 五、發明説明（1) 對安排，俾由陰極所發射之電子撞擊於陽極上，導致陽極 上電發光，此電發光可透過光半透明陰極看見。 應明暸”導電性”及”絕緣性”可爲相對之電氣術言吾 ’視其量度基礎而定。半導體具有有用之導電性質，且實 則，可在本發明中用作導體。在本說明書中，一絕緣材料 具有電阻至少爲導電性材料之1 0 2倍（且宜至少1 〇 3或 I 〇 4 倍）。 圖式之簡要說明 爲更佳明瞭本發明，及如何實施其實施例，現參考以 實例提出之附圖，其中： 圖1 a及至1 b係展示習知方法所製造之陰極平面結 構； 圖2 a至2 c係展示發射器之習知結構； 圖3 a至3 c係展示習知形成閘極結構之技術； 圖4 a至4 e顯示製造一大面積場電子射極之方法之 一例； 圖5 a至5 c顯示製造一大面積場電子射極之方法之 另一例； 圖6 a至6 c顯示製造一大面積場電子射極之方法之 又另一例；及 圖7 a至7 c顯示使用大面積場電子射極之裝置之例 〇 主要元件對照 10 基體 II 陰極軌跡 12 射極層 13 聚焦柵極軌跡 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14- 494424 A7 B7五、1發明說明（12 ) 經濟部智慧財產局員工消費合作社印製 14 閘 絕 緣 體 15 閘 極 軌 跡 16 孔 17 電 子 21 1 導 電 性 層 212 導 電 性 微 粒 213 絕 緣 媒 體 214 導 電 通 道 226 射 極 402 陰 極 導 電 性 層 404 閘 電 極 405 光 阻 層 406 橡 皮 刷 帚 409 絕 緣 先 質 410 射 極 胞 413 縣 浮 體 432 超 "jwjl 波 淸 潔 器 435 碎 屑 523 陽 極 板 525 磷 質 層 603 絕 緣 先 質 溶 液 808 印 刷 頭 81 1 不 需 要 之 材 料 ----------1 --------^-------11 (請先閱讀背面之注意事項再填寫本頁) 本發明之實施例可有許多應用，其中一些由以下實例 本紙禮度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 494424 A7 B7 __ _ 五、發明說明（13 ) 說明。應明瞭以下說明僅圖解本發明之一些實施例。精於 本藝之人士可設計出各種替代及修改。 實例1 例如，吾人以實例說明一種使用Μ I Μ I V射極系統 之射極結構，如說明於吾人之G Β 2 3 0 4 9 8 9 Β。在 本例中，一射極複合層由其構成部份組合於一射極胞中， 例如在一顯示器中。如說明於吾人之G Β 2 3 0 4 9 8 9 Β，射極使用墨水由旋塗法正規沉積於平面表面上。此等 墨水包含一絕緣先質，諸如聚合物或凝膠；先質之一溶劑 ;分散劑及表面活化劑加導電性微粒。在旋塗後，該層經 熱處理，以形成最後層。此種之一墨水由二氧化矽凝膠溶 解於丙烷2醇所構成，具有分散之石墨微粒，以形成懸浮 體。在旋塗後，使用在空氣中熱處理輪廓至4 5 °C，以固 化該層。讀者參考吾人之同待核定之申請書 PCT/GB00/02537，該說明書及其附圖之栲貝隨附於本申請 書。 該墨水之一適當處方爲： 1)凝膠製備 正矽酸四乙酯（1 Om 1 )及MOS級之丙烷2醇（ 4 7 m 1 )混合，並冷卻至5 — 1 0 °C，以1 0 0 0 r p m攪拌。然後加在去離子水（2 · 5 g )中之濃硝酸 (0 · 1 0 g )之溶液於此攪拌之混合物中。在2小時後 本紙度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------Φ 裝--------訂---------^9— (請先閱讀背面之注意事項再填寫本頁) 494424 A7 B7 五、發明說明（14 ) ’混合物轉移至一密封容器，並儲存於4 °C之冰箱中，直 至需要。 Μ 0 S級之丙烷2醇之比例在測試上調整，俾微粒數 及其與絕緣固體之比率在使用之射極胞中正確。 2)分散體製備 標稱6微米石墨微粒（〇· 150g)及先通過 〇 · 2微米過濾器過濾之以上（1 )之凝膠分散體（ 9 · 8 5 0 g )混合’及使用局功率超音波探針執行超音 波激動1 0分鐘。使樣品冷卻至室溫，並另以超音波激動 1 0分鐘。此產生所需之墨水，成爲黑色懸浮體。該混合 物轉移至一密封容器，並儲存於4 °C之冰箱中。 圖4a顯示顯示一基體（通常爲玻璃401); —陰 極導電性軌跡4 0 2 (普通爲金）；一絕緣層4 0 3 (通 常爲玻璃）；及一閘極導體4 0 4 (通常爲金）。在使用 自我對齊法，以構製射極胞4 1 0後，一光阻層4 0 5保 留。此一構造可由使用參考圖1 a及1 b在構想上所述之 方法製造，但除去射極層1 2及聚焦柵極層1 3。此法之 整個詳細說明於吾人之專利G B 2 3 3 0 6 8 7 B，讀者 注意參考此。精於本藝之人士明瞭如何採用其中之方法來 製造圖4 a所述之結構。然而，本發明並不限於使用此法 所製之結構。其他方法，諸如標準半導體製造方法可使用 〇 再參考圖4a ，然後使用橡皮刷帚406 ，塗敷包含 本紙禮天：度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---------線- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 494424 A7 B7 五、發明說明（15 ) 微粒4 0 8及絕緣體先質之溶液之墨水4 0 7 ’以充塡於 空射極胞中。在刷掃過程中’ 一些不需要之微粒聯同所屬 之絕緣先質4 0 9不可避免地沉積於覆蓋閘電極之光阻層 4 0 5 上。 在該程序之此際，吾人具有計量體積之墨水在每一射 極胞中。墨水之處方使該體積之墨水中含有充足之微粒.， 薄薄覆蓋該胞之底部’及充足之絕緣先質一旦固化後’形 成所需厚度之一絕緣層。如現執行固化程序’則由於表面 張力，則有高度可能許多微粒會在胞底形成堆，或固定於 其壁上。 圖4 b顯示可如何避免此問題。在橡皮刷帚程序之後 或其開始之前，施加一電位於陰極軌跡4 0 2及閘電極 4 0 4之間。在懸浮體中之微粒4 1 3故被掃出懸浮體， 並直接電泳塗覆於陰極軌跡4 0 2上。使用絕緣溶劑，此 需要施加較閘極軌跡爲正之偏壓於陰極軌跡上。需要數十 至數百伏/ c m範圍之電場。附著於胞壁上且其後固化之 任何絕緣先質應無微粒，且故此不形成發射地點。 橡皮刷帚以外之方法可用以施塗懸浮體，諸如K塗敷 器（線滾子），如，由英國 Hertforshire，Royston，Litlington 之 R K印塗工具公司所供應者。同樣，可使用例如以通過槽 孔擠出懸浮體爲基礎之特意設計之分配器。 在電泳沉積步驟後，基體在以下條件下轉移至熱板： 1)在50 °C上10分鐘一量度熱板之表面溫度；2)在 1 2 0°C上1 0分鐘一量度熱板之表面溫度。 本紙嚷後:度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 494424 A7 B7 五、發明說明（16 ) 吾人現在圖4 c所示之階段，具有部份固化之射極層 4 2 1在胞底部，及不需要之可能射極4 0 9在閘極 4 0 5之表面上。 現移至圖4 d，組件4 3 1轉移至一超音波淸潔器 43 2，充以M 0S級丙酮。該淸潔器操作10 — 2 0秒 ，同時攪動該組件。在此期間中，光阻層4 3 4連同不需 要之碎屑4 3 5由升去法除去，以提供閘極導體4 0 4之 大致平面形之外表面4 3 6。 該組件然後在二面上由Μ 0 S級丙酮沖洗，並再以 Μ〇S級丙2醇沖洗。 在電泳沉積步驟後，基體轉移至在以下條件下之熱板 :1)在50 °C上10分鐘一量度熱板之表面溫度；2) 在1 2 0°C上1 0分鐘一量度熱板之表面溫度。 基體然後轉移至一爐（空氣大氣），依據以下輪廓： 以lCTC/mi η周圍至45°C ;等熱於450°C上 1 2 0分鐘；隨後自然冷卻至室溫。 製成之射極結構顯示於圖4 e。 實例2 現移至圖5，使用一種更普通之電泳方法。一池 6 0 2包含微粒6 0 5在絕緣先質溶液6 0 3中之懸浮體 。可使用與實例1相似之處方，但微粒之濃度大爲降低。 欲塗覆之基體6 0 0 (連同以上參考圖4大體所述之軌跡 ，層，及射極胞）懸吊於池中，及電連接線6 0 8自電源 本紙痕块：度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Jin (U.S. Patent No. 5,8 1 1,9 1 6) is a field emission display using a very specific type of vermiculite material. ] in the past mentioned the use of electrophoresis to deposit particles of this material (which itself is an emissive material) on the substrate, but did not mention it in detail. The object of a more preferred embodiment of the present invention is to provide an improved field emission structure in which a composite field electron emitter containing microparticles is constructed on the spot in a previously manufactured electrode structure. This method should preferably include the use of electrophoresis to optimally place particles within the electrode structure. The emitter structure can be used in the device, which includes: field electron emission display panels; high-power pulse wave devices such as electronic MASERS and transcript paper spring scales applicable to China National Standard (CNS) A4 (210 X 297 mm) (please (Please read the notes on the back before filling this page) -------- Order --------- Line ι Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 494424 Employee Cooperative Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed A7 B7 V. Description of the invention (7) Moving gyroscope; Cross-field microwave tube, such as CFA; Linear beam tube, such as thyratron; Flash X-ray tube; Trigger spark gap and related devices; Area X-ray sources; vacuum gauges; ion thrusters for space vehicles; particle accelerators; electric lights: ozonizers; and plasma reactors. According to an aspect of the present invention, a method for manufacturing a composite large-area field electron emitter in an electrode structure with at least a part of perforation is provided. The method includes the steps of: a) setting a mask layer in a selected area of the electrode structure; To define the masked area and the unmasked area of the electrode structure; b) after step a), apply at least one first particle constituent part and a second constituent part to the maskless area of the electrode structure The particles of the first component are selected to be guided to the desired position of the unmasked area; and after step b): c) the mask layer on the selected area is removed together with the composition on the mask layer Any fugitive amount of the part; and d) processing the constituent parts to create a large-area field electron emission site in a desired position of the electronic structure. Step d) should preferably be performed after step c). Material particles can be applied in step b) to become a plurality of conductive particles in a solution or colloidal dispersion in an electrically insulating material or its chemical precursor, and the procedure of step d) results in the conductive particles being coated on The procedure of 0 step d) in the electrically insulating material may include removing the short-acting constituents of the solution or dispersion. This paper gift S: Degree applies to China National Standard (CNS) A4 specification (210 X 297 mm): 10---------------------- Order ---- ----- Line C, please read the notes on the back before filling in this page) 494424 A7 B7 8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (may be included in the liquid component of the solution or dispersion Dissolving one of the chemical precursors, and the method may include decomposing the precursor by heat, ultraviolet light, or applying to form the electrical insulation material. The precursor may be in the form of a gel. The precursor may include a Soluble polymer. The particles may include conductive particles, pre-coated with an electrically insulating material. The electrically insulating material may include silicon dioxide. Step (b) may include applying the first and second portions to the electrode structure via hole spraying. In the selected area, the holes are arranged on the electrode, and the particles of the first component are guided to the desired position. The holes can be defined by the part of the electrode structure, which covers the recesses formed in the electricity On the mouth, the first and second components are selected by the bottom of the notch instead of on its wall. These notches may have side walls, The inside is inclined toward the bottom of the notch. Each notch should be constructed by wet etching, which forms a cut under the respective part covering the respective concave pole structure. The electrically insulating material can be a colloidal or fine particle dispersion Shape, and then sintered together by heat to form a solid phase. The above method may include the steps of: applying a metal to the particles, and oxidizing the metal to form an electrically insulating material. The metal may also be applied to the cathode track. The The metal can be applied by electroplating. The particles should be conductive particles, which can include graphite. The procedure of step d) can result in each of the conductive particles having a layer of edge material, and other measures. And then the electrical insulation --------------------- order --------- line · (Please read the precautions on the back before filling this page ) This paper's dedication applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 494424 A7 B7 V. Description of Invention (9) In a first position between the surface and the particles, and / or the particles and the electrode junction In one of the second positions of the environment between the structures, at least some particles form electron emission sites at the first and / or second positions. The above method may include the step of adding another layer to the conductive particles and / or electricity. Layer of insulating material to enhance electron emission. The above method may include another step of curing or partial curing between steps b) and c). The processing step d) may include curing. The electrode structure should preferably have a pre-manufactured emitter cell and the desired location within the emitter cell. The required positions should each include the bottom of a hole. The desired locations should each be at a conductive surface. The microparticles can be applied to a carrier in step b), and the method can include a step of removing the excess carrier from the electrode structure thereafter. The excess carrier can be removed by a rubber broom or similar device. The selection of particles should be achieved by electrophoresis. The mask layer should be provided in step (a) as part of the procedure for constructing at least a part of the electrode structure, and printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs before step (b). The second component is preferably the precursor of the electrical insulator, which is constructed in step (d). The invention extends to the fabrication of a field electron emitter according to the method of any of the previous aspects of the invention. In another aspect, the present invention provides a field electron emission device, which includes a paper photographed in accordance with Chinese National Standards (CNS) A4 specifications (210 X 297 public meals). Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. 494424 A7 B7___ V. · Explanation of the invention (10) This field of electron emitters, and a device for making the emitters receive an electric field to cause the emitters to emit electrons. This device may include a small block of emitters with a matrix having a row of field electron emitters. The control electrode has aligned rows of holes, and the electrode is supported on the small piece of emitter by an insulating layer. The holes should be slot-shaped. The above device may include a plasma reactor, a corona discharge device, a silent discharge device, and ozonation. Device, electron source, electron gun, electronic device, X-ray tube, vacuum gauge, inflatable device, or ion thruster. The field electron emitter can be used to operate the total current of the device. The field electron emitter can be used to activate and trigger the device. , Or prepare a current above 0. The device may include a display device. The above device may include an electric lamp. The electric lamp is generally flat. The emitter can pass through a ballast resistor Connected to an electric drive device to limit the current. A galvanic resistor can be used as a resistance pad under each emitting block. The emitting material and / or phosphor can be applied to one or more spatial rows of conductive tracks, These trajectory arrangements are addressed by an electronic drive to produce a scanning luminous line. This device may include the electronic drive. The field emitter can be placed in a gas, liquid, solid, or vacuum environment. The above devices may include A cathode, which is translucent, and an anode -------------------- 1 --------- (Please read the note on the back first Please fill in this page for further details.) This paper is decisive: the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable. -13-494424 Printed by A7 of the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs _ _ _ B7_ V. Description of the invention (1) For the arrangement, the electrons emitted from the cathode impinge on the anode, resulting in electroluminescence on the anode. This electroluminescence can be seen through the light translucent cathode. It should be understood that "conductivity" and "insulation" can be opposite Electrical theory depends on its measurement basis. Semiconductors have useful electrical conductivity Nature, and in fact, can be used as a conductor in the present invention. In this specification, an insulating material has a resistance that is at least 102 times (and preferably at least 103 or 104 times) the resistance of a conductive material. The brief description is to better understand the present invention and how to implement its embodiments, and reference is made to the drawings, which are presented by way of example, in which: Figures 1a and 1b show the planar structure of a cathode manufactured by a conventional method; Figures 2a through 2c shows the conventional structure of the emitter; Figures 3a to 3c show the conventional technology for forming a gate structure; Figures 4a to 4e show an example of a method for manufacturing a large-area field electron emitter; Figure 5 a to 5c show another example of a method of manufacturing a large-area field electron emitter; Figures 6a to 6c show another example of a method of manufacturing a large-area field electron emitter; and Figures 7a to 7c show use Example of a large-area field electron emitter device 〇 Comparison of main components 10 Base body II Cathode track 12 Emitter layer 13 Focusing grid track (please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS ) A4 size (210X297 mm) -14- 494424 A7 B7 V.1 Description of the invention (12) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 14 Gate insulator 15 Gate track 16 Hole 17 Electron 21 1 Conductive layer 212 Conductive particle 213 Insulating medium 214 Conductive channel 226 Emitter 402 Cathode conductive layer 404 Gate electrode 405 Photoresist layer 406 Eraser brush broom 409 Insulation precursor 410 Emitter cell 413 County floating body 432 Super " jwjl wave cleaner 435 Debris 523 Anode plate 525 Phosphorous layer 603 Insulation first Solution 808 Print head 81 1 Unwanted materials ---------- 1 -------- ^ ------- 11 (Please read the precautions on the back before filling in this Pages) The embodiments of the present invention can have many applications, some of which are shown in the following examples. This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. _ 5. Description of the invention (13) Description. It should be understood that the following description illustrates only some embodiments of the invention. Those skilled in the art can design various alternatives and modifications. Example 1 For example, I will use an example to illustrate an emitter structure using the MIV IV emitter system, as illustrated in my GB 2 3 0 4 9 8 9 B. In this example, an emitter composite layer is composed of its constituent parts in an emitter cell, such as in a display. As explained in my G Β 2 3 0 4 9 8 9 Β, the emitter electrode is regularly deposited on the flat surface by the spin coating method using ink. These inks contain an insulating precursor such as a polymer or gel; a solvent for the precursor; a dispersant and a surfactant plus conductive particles. After spin coating, this layer is heat treated to form the final layer. One such ink is composed of silica dioxide dissolved in propane 2 alcohol, and has dispersed graphite particles to form a suspension. After spin coating, heat treat the profile to 45 ° C in air to cure the layer. The reader refers to my co-pending application PCT / GB00 / 02537, and a copy of the specification and accompanying drawings is attached to this application. One of the appropriate prescriptions for this ink is: 1) Gel-prepared tetraethyl orthosilicate (1 Om 1) and MOS grade propane 2 alcohol (4 7 m 1) are mixed, and cooled to 5-1 0 ° C to Stir at 1 0 0 0 rpm. Then, a solution of concentrated nitric acid (0.10 g) in deionized water (2.5 g) was added to the stirred mixture. After 2 hours, this paper will comply with China National Standard (CNS) A4 (210 X 297 mm) ----------- Φ Packing -------- Order ------ --- ^ 9— (Please read the notes on the back before filling this page) 494424 A7 B7 V. Description of the invention (14) 'The mixture is transferred to a sealed container and stored in a refrigerator at 4 ° C until needed. The ratio of M 0 S grade propane-2 alcohol was adjusted during testing. The number of tritium particles and the ratio to the insulating solid are correct in the emitter cell used. 2) Dispersion preparation Nominal 6 micron graphite particles (0 · 150g) and gel dispersion (9 · 850 g) above (1) filtered through a 0.2 micron filter before mixing and using local power The ultrasound probe performs ultrasound excitation for 10 minutes. Allow the sample to cool to room temperature and excite with ultrasound for another 10 minutes. This produces the required ink and becomes a black suspension. The mixture was transferred to a sealed container and stored in a refrigerator at 4 ° C. Figure 4a shows a substrate (usually glass 401);-the cathode conductive track 4 0 2 (usually gold); an insulating layer 4 0 3 (usually glass); and a gate conductor 4 0 4 (usually gold). After using the self-alignment method to construct the emitter cell 410, a photoresist layer 405 remains. This structure can be manufactured using the method described in the conception with reference to Figs. 1a and 1b, except that the emitter layer 12 and the focusing gate layer 13 are removed. The entire details of this method are described in my patent G B 2 3 3 0 6 8 7 B. Readers should refer to it. Those skilled in the art know how to use these methods to make the structure described in Figure 4a. However, the present invention is not limited to the structure made by this method. Other methods, such as standard semiconductor manufacturing methods, can be used. Then refer to Figure 4a, and then use a rubber broom 406 to apply the paper containing the paper. (Please read the notes on the back and fill in this page) -------- Order --------- Line-Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 494424 A7 B7 V. Description of the invention (15) Ink 4 0 7 'of solution of particles 408 and insulator precursor is used to fill air emitter cells. During the brushing process, some undesired particles are inevitably deposited on the photoresist layer 4 0 5 covering the gate electrode together with the corresponding insulating precursor 4 0 9. At the time of this procedure, we have a metered volume of ink in each emitter cell. The ink is made so that sufficient ink is contained in the volume of ink, and the bottom of the cell is thinly covered and the sufficient insulating precursor is once cured, to form an insulating layer of a desired thickness. If the curing process is performed now, there is a high possibility that many particles may form a pile at the bottom of the cell or be fixed to the wall due to surface tension. Figure 4b shows how this can be avoided. After or before the eraser broom program, an electric charge is applied between the cathode track 4 02 and the gate electrode 4 04. The particles 4 1 3 in the suspension are thus swept out of the suspension and directly coated on the cathode track 4 2 by electrophoresis. With an insulating solvent, this requires applying a positive bias to the cathode track than the gate track. An electric field in the range of tens to hundreds of volts / cm is required. Any insulating precursor that adheres to the cell wall and cures thereafter should be free of particles and therefore should not form a launch site. Methods other than squeegee brooms can be used to apply suspensions, such as K applicators (line rollers), for example, supplied by R K Printing Co., Ltd., Hertforshire, Royston, Litington, UK. Likewise, purposely designed dispensers, such as those based on extruding suspensions through slots, can be used. After the electrophoretic deposition step, the substrate was transferred to the hot plate under the following conditions: 1) the surface temperature of the hot plate was measured at 50 ° C for 10 minutes; 2) the temperature of the hot plate was measured at 120 ° C for 10 minutes surface temperature. Back of this paper: Degree applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) ------------------- Order --------- (Please read the precautions on the back before filling in this page) 494424 A7 B7 V. Description of the invention (16) I am now at the stage shown in Figure 4c, with a partially cured emitter layer 4 2 1 at the bottom of the cell, and not The possible emitter 4 0 9 is on the surface of the gate 4 5. Now move to Figure 4d, the component 4 3 1 is transferred to an ultrasonic cleaner 43 2 and filled with M 0S grade acetone. The cleaner operates for 10-20 seconds while agitating the assembly. During this period, the photoresist layer 4 3 4 and the unnecessary debris 4 3 5 are removed by lift-off to provide a substantially planar outer surface 4 3 6 of the gate conductor 4 0 4. The assembly was then rinsed on both sides with MOS grade acetone and again with MOS grade propanol. After the electrophoretic deposition step, the substrate was transferred to a hot plate under the following conditions: 1) the surface temperature of the hot plate was measured at 50 ° C for 10 minutes; 2) the hot plate was measured at 120 ° C for 10 minutes The surface temperature. The substrate is then transferred to a furnace (air atmosphere) according to the following contour: around 1CTC / mi η to 45 ° C; isothermally heated at 450 ° C for 120 minutes; then naturally cooled to room temperature. The fabricated emitter structure is shown in Figure 4e. Example 2 Moving to Figure 5, a more general electrophoresis method is used. A pool of 602 contains a suspension of particles 605 in an insulating precursor solution 603. Similar to Example 1 can be used, but the concentration of particles is greatly reduced. The substrate to be coated 6 0 0 (together with the trajectories, layers, and emitter cells generally described above with reference to FIG. 4) is suspended in the pool, and the electrical connection wire 6 0 8 is from the power supply. Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page)
— — — — — — — ^ 1111111 I 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 494424 A7 B7____ 五、發明說明（17 ) 6 0 4之一端連接至陰極軌跡。閘電極6 0 7可電浮動， 且宜由一光阻層6 0 9覆蓋。一反電極6 0 1連接至電源 6 0 4之另一端。在施加在數十至數百伏/c m範圍之普 通電場之電壓時，微粒6 0 5選擇電泳塗覆於射極胞 6 0 6之底部上。 基體現移出該池，並瀝乾，故如圖5 b所示。雖此方 法可產生可接受之結果，但可見懸浮體6 1 1之微粒可保 留於射極胞之空間中，且如顯示於圖5 c ，在固化後，保 留於不需要之位置6 2 0。如光阻層6 0 9不使用或其後 不移去，可能之發射碎屑6 1 0·保留於閘極表面上。 實例3 現移至圖6 a至6 c ，說明引導射極材料至所需位置 之另一方法。此方法利用下切，此在使用濕蝕刻法時自然 發生。 圖6 a顯示通過一部份處理之閘控場發射結構之斷面 圖’其中，標籤4 0 1至4 0 5具有與先前之例相同之意 義。射極胞8 0 0具有斜邊8 0 1 ，此等普通由濕蝕刻法 形成。閘電極4 0 4具有孔8 0 2對齊陰極軌跡4 0 2， 並懸空於由濕蝕刻法所下切之斜邊8 0 1。其目的在沉積 射極材料8 1 0於陰極軌跡8 0 3上，同時避免塗覆於射 極胞之側邊處所出之閘絕緣體8 0 1上。如射極材料噴擺 於閘極之上表面上，則宜由準直噴濺8 0 9 ，諸如可由噴 墨印刷頭8 0 8獲得，懸空之閘電極4 0 4作用如蔽罩， 本紙？^处：度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 494424 A7 B7 五、發明說明（18 ) 保持閘絕緣體之斜邊淸淨。當印刷頭8 0 8橫過該結構時 ，噴散於閘極4 0 4之表面上之不需要之材料8 1 1落於 光阻層4 0 5上。此其後可由諸如前述之升離法移去，以 留下圖6 b所示之完成之結構。 本例中所述之方法可用於如前實例1所述之複合射極 ，由一起沉積導電性微粒及由液相先質所構成之絕緣體， 以形成射極材料8 1 0，如顯示於圖6 b。或且，如顯示 於圖6 c ，可選擇沉積完全製成之微粒基礎之射極（例如 ，已塗以薄層之絕緣體之導電性微粒，如說明於 G B 2 3 0 4 9 8 9 )，懸浮於液體媒體，或由噴濺乾微 粒。一旦放妥，微粒8 2 0可由諸如硬焊或燒結固定。 此處有關複合射極之當場組合之述說可適用於廣大範 圍之情況。例如，除凝膠及可溶之絕緣先質（例如聚合物 )外，可使用膠態及細微粒懸浮體。 可由施敷一金屬於陰極軌跡及微粒（例如由電鍍）上 ，此然後加以氧化，以形成絕緣構成部份。 微粒亦可由電泳沉積，使用先行及/或其後方法步驟 沉積之惰性液體媒體及絕緣體。可引進額外之方法步驟， 以加上電子發射加強介面及表面層，如吾人同待核定之申 請書GB2340299所述。 如此，在本發明之上述實施例中，由一蔽罩層界定電 極結構之所選區域，及然後施敷一第一特定構成部份及一 第二構成部份於所選之區域。由選擇引導微粒於此等所選 之區域內之所需位置，獲得優點，即微粒豎立於需發射之 本紙嫫欠―度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 494424 A7 B7 五、番明說明（19 ) 處，而不在無需發射之處。可由使用蔽罩層獲得另一有用 之製造優點，此在再用於施敷第一及第二構成部份於所選 之區域中之前，已在部份製造電極結構中使用過。 可由諸如上述之改善之射極材料提供之場電子發射電 流可使用於廣大範圍之裝置中，包括（在其他中）：場電 子發射顯示板；電燈；高功率脈波裝置，諸如電子MASERS 及掁動陀螺儀；交叉場微波管，諸如C F A ;線性束管， 諸如閘流管；快閃X射線管；觸發火花隙及有關裝置；消 毒用之大面積X光線源；真空計；太空航具用之離子推進 器及粒子加速器。 此等裝置之一些實例顯示於圖7a，7b，及7c。 圖7 a顯示一可定址之閘控陰極，如可用於場發射顯 示器中。該結構由一絕緣基體5 0 0，陰極軌跡5 0 1 ， 射極層5 0 2，聚焦柵極層5 0 3電連接至陰極軌跡，閘 絕緣體5 0 4，及閘極軌跡5 0 5構成。閘極軌跡及閘絕 緣體由射極胞5 0 6穿孔。在所選陰極軌跡上之一負偏壓 及在閘極軌跡上之相關正偏壓使電子5 0 7發射向一陽極 (未顯示）。 有關場效裝置之更詳構造，讀者可參考吾人專利G B 2 3 3 0 687B。 每層之電極軌跡可會合，以形成一可控制但不可定址 之電子源，此可應用於許多裝置上。 圖7顯示上述可定址結構5 1 0可如何與一玻璃燒結 密封5 1 3連接至一透明陽極板5 1 1 ，其上具有一磷質 本紙福泛度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) • * I .1 n ϋ a— n I · am— eamw I ϋ a···· ·ϋ I · 494424 經濟部智慧財產局員工消費合作社印製 本紙禊史度適用中國國家標準（CNS)A4規格（210 X 297公釐) A7 B7 五、發明說明（2C)) 螢幕5 1 2。板間之空間5 1 4真空，以形成一顯示器。 雖已說明一單色顯示器，俾易於圖解及說明，但精於 本藝之人士容易明暸可使用具有三部像素之對應安排，以 製造一彩色顯示器。 圖7 c顯示一平板電燈，使用上述材料之一。此燈可 用以提供源晶顯示器之背光，唯此並不排除其他用途，諸 如室內照明。 該電燈包含一陰極板5 2 0，其上沉積一導電性層 5 2 1及一發射層5 2 2。如上述（以及此處所提之吾人 其他專利申請書中所述）之鎭流層可用以提高發射之均勻 性。一透明陽極板5 2 3上具有一導電性層5 2 4及一磷 質層5 2 5。一玻璃料燒結環5 2 6密封並分開二板。中 間空間5 2 7真空。 精於本藝之人士容易明瞭此等裝罝之作用及構造，此 等僅爲本發明之實施例之許多應用之實例。本發明之較宜 實施例之一重要特色爲能能在當場組合射極層之前，印刷 一電極圖案，從而使複雜之多射極圖案，諸如顯示器所需 者可在中度之成本上製造。而且，此印刷能力能使用低成 本之基體材料，諸如玻璃；而微工程結構普通建造於高成 本之單晶基體上。在本說明書之內容中，印刷意爲一種設 置或構製一射極材料成訂定之圖案之方法。適當方法之例 (在其他中）爲網印，靜電複印，照相製版’靜電沉積， 噴濺，噴墨印刷，及凸版。 本發明具體之裝置可製成所有尺寸’大及小。此特別 ---------------------訂--------- 4 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 494424 A7 ___ B7 五、發明說明（21 ) 適用於顯示器，此可自單像素裝置至多像素裝置，自小型 至大型顯示器。 射極構成部份之暫時載具可使用於許多實例中。 在本說明書中，動詞”包含”具有其正常之字典意義 ，以表示不排他之包含。即是，包含一特色更多之”包含 ’’（或其衍生物）一字之使用並不排除亦包含其他特色之 可能性。 讀者注意與有關本申請書之本說明書同時或在先提出 ’及與本說明書公開供眾閱覽之所有文件，且所有文件之 內容例作參考。 本說明書中所發表之所有特色（包括任何附帶之申請 專利範圍，摘要，及附圖），及/或如此所發表之任何方 法之所有步驟可作任何合倂，唯至少一些此等特色及/或 步驟之合倂相互排斥者除外。 除非另有說明，本說明書（包括任何附帶之申請專利 範圍，摘要，及附圖）中所發表之每一特色可由同樣，同 等，及相似用途之其他特色取代。故此，除非另有說明， 所發表之每一特色僅爲一系列相等或相似特色之一例。 本發明不限於以上實施例之細節。本發明延伸至本說 明書（包括任何附帶之申請專利範圍，摘要，及附圖）中 所發表之特色之任一創新或任一創新組合，或所發表之方 法步驟之任一創新或任一創新組合。 本紙禮失度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)— — — — — — — ^ 1111111 I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employee Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 494424 A7 B7____ V. Description of Invention (17) One end of 6 0 4 is connected to the cathode track. The gate electrode 607 can be electrically floated and should be covered by a photoresist layer 609. A counter electrode 601 is connected to the other end of the power source 604. When a voltage of a general electric field in the range of several tens to several hundreds of volts / cm is applied, the particles 605 are electrophoretically coated on the bottom of the emitter cell 606. The base is removed from the pond and drained, so it is shown in Figure 5b. Although this method can produce acceptable results, it can be seen that the particles of the suspension 6 1 1 can remain in the space of the emitter cell, and as shown in FIG. 5 c, after curing, it remains in the unwanted position 6 2 0 . If the photoresist layer 6 0 9 is not used or removed thereafter, possible emission debris 6 1 0 · remains on the gate surface. Example 3 Moving to Figures 6a to 6c, another method of guiding the emitter material to the desired position is illustrated. This method uses undercutting, which occurs naturally when wet etching is used. Fig. 6a shows a sectional view of the gated field emission structure processed through a part of the process, wherein the labels 401 to 405 have the same meaning as the previous example. The emitter cell 8 0 0 has a hypotenuse 8 0 1, which is generally formed by a wet etching method. The gate electrode 4 0 4 has a hole 8 0 2 aligned with the cathode track 4 2 2 and is suspended on a hypotenuse 8 0 1 cut by a wet etching method. The purpose is to deposit the emitter material 8 1 0 on the cathode track 8 0 3 while avoiding coating on the gate insulator 8 0 1 on the side of the emitter cell. If the emitter material is sprayed on the upper surface of the gate, it should be sprayed by collimation 8 0 9. For example, it can be obtained by the inkjet print head 8 8. The suspended gate electrode 4 0 4 acts as a shield. ^ Place: Degree applies to China National Standard (CNS) A4 specification (210 X 297 mm) -------------------- Order --------- (Please read the precautions on the back before filling out this page) Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 494424 A7 B7 V. Description of the invention (18) Keep the hypotenuse of the gate insulators clean. When the printing head 8 0 8 traverses the structure, the unnecessary material 8 1 1 scattered on the surface of the gate 4 4 falls on the photoresist layer 4 05. Thereafter, it can be removed by a lift-off method such as that described above to leave the completed structure shown in Fig. 6b. The method described in this example can be used for the composite emitter as described in the previous example 1. The conductive material and the insulator composed of the liquid precursor are deposited together to form the emitter material 8 1 0, as shown in the figure. 6 b. Or, as shown in Figure 6c, it is optional to deposit a completely made particle-based emitter (for example, conductive particles coated with a thin layer of insulator, as described in GB 2 3 0 4 9 8 9), Suspend in liquid media or spray dry particles. Once placed, the particles 8 2 0 can be fixed by, for example, brazing or sintering. The description on the spot combination of the composite emitter here can be applied to a wide range of situations. For example, in addition to gels and soluble insulating precursors (such as polymers), colloidal and fine particle suspensions can be used. A metal can be applied to the cathode track and particles (for example, by electroplating), and then oxidized to form an insulating component. Particles can also be deposited by electrophoresis using inert liquid media and insulators deposited prior to and / or following method steps. Additional method steps can be introduced to add electron emission to strengthen the interface and surface layer, as described in our application GB2340299 to be approved. Thus, in the above embodiment of the present invention, a selected area of the electrode structure is defined by a mask layer, and then a first specific component and a second component are applied to the selected area. By choosing to guide the particles in the desired position in these selected areas, the advantage is obtained that the particles stand on the paper to be launched-the degree is applicable to China National Standard (CNS) A4 (210 X 297 mm)- ------------------ Order --------- line (please read the notes on the back before filling out this page) Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printing 494424 A7 B7 V. Fanming instructions (19), not where no launch is needed. Another useful manufacturing advantage can be obtained by using a mask layer, which has been used in some manufactured electrode structures before being reused to apply the first and second component parts in selected areas. Field electron emission currents that can be provided by improved emitter materials such as those described above can be used in a wide range of devices, including (among others): field electron emission display panels; electric lamps; high power pulse wave devices such as electronic MASERS and 掁Moving gyroscope; Cross-field microwave tube, such as CFA; Linear beam tube, such as thyratron; Flash X-ray tube; Trigger spark gap and related devices; Large area X-ray source for disinfection; Vacuum gauge; Spacecraft Ion accelerator and particle accelerator. Some examples of these devices are shown in Figures 7a, 7b, and 7c. Figure 7a shows an addressable gated cathode, such as can be used in a field emission display. The structure is composed of an insulating substrate 5 0 0, a cathode track 5 0 1, an emitter layer 5 0 2, a focusing gate layer 5 0 3 electrically connected to the cathode track, a gate insulator 5 0 4, and a gate track 5 0 5 . The gate trajectory and the gate insulator are perforated by the emitter cell 506. One of the negative biases on the selected cathode track and the associated positive bias on the gate track causes electrons 507 to be emitted toward an anode (not shown). For more detailed structure of the field effect device, the reader can refer to our patent G B 2 3 3 0 687B. The electrode trajectories of each layer can meet to form a controllable but non-addressable electron source, which can be applied to many devices. Figure 7 shows how the above addressable structure 5 1 0 can be connected with a glass sintered seal 5 1 3 to a transparent anode plate 5 1 1 with a phosphorous paper on it. The degree of applicability of the Chinese National Standard (CNS) A4 ( 210 X 297 mm) (Please read the notes on the back before filling this page) • * I .1 n ϋ a— n I · am— eamw I ϋ a ····· ϋ I · 494424 Intellectual Property of the Ministry of Economic Affairs The printed history of the paper printed by the Bureau ’s Consumer Cooperative is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) A7 B7 V. Description of Invention (2C)) Screen 5 1 2 The space 5 1 4 between the boards is vacuumed to form a display. Although a monochrome display has been described, it is easy to illustrate and explain, but those skilled in the art will readily understand that a corresponding arrangement with three pixels can be used to make a color display. Figure 7c shows a flat electric lamp using one of the above materials. This lamp can be used to provide the backlight of the source crystal display, but it does not exclude other uses, such as indoor lighting. The electric lamp includes a cathode plate 5 2 0 on which a conductive layer 5 2 1 and an emission layer 5 2 2 are deposited. As mentioned above (and described in our other patent applications mentioned here), the stratosphere can be used to improve the uniformity of the emission. A transparent anode plate 5 2 3 has a conductive layer 5 2 4 and a phosphorous layer 5 2 5. A frit sintered ring 5 2 6 seals and separates the two plates. Intermediate space 5 2 7 vacuum. Those skilled in the art can easily understand the function and structure of these devices, and these are just examples of many applications of the embodiments of the present invention. An important feature of the preferred embodiment of the present invention is the ability to print an electrode pattern before combining the emitter layers on the spot, so that complex multi-emitter patterns, such as those required for displays, can be manufactured at a moderate cost. Moreover, this printing capability can use low cost substrate materials, such as glass; and micro-engineered structures are typically built on high cost single crystal substrates. In this specification, printing means a method of setting or constructing an emitter material into a predetermined pattern. Examples of suitable methods (among others) are screen printing, xerography, photoengraving 'electrostatic deposition, splatter, inkjet printing, and letterpress. The specific device of the present invention can be made in all sizes' large and small. This special --------------------- Order --------- 4 (Please read the precautions on the back before filling this page) Ministry of Economy Wisdom Printed by the Consumer Cooperative of the Property Bureau 494424 A7 ___ B7 5. Description of the invention (21) Applicable to display, this can be from single pixel device to multi-pixel device, from small to large display. Temporary vehicles for the emitter component can be used in many instances. In this specification, the verb "to include" has its normal dictionary meaning to indicate non-exclusive inclusion. That is, the use of the word "comprising" (or its derivatives) that includes more features does not exclude the possibility that other features are also included. Readers are cautioned to submit at the same time or in advance as the description of this application ' And all documents disclosed in this specification for public viewing, and the contents of all documents as examples for reference. All features published in this specification (including any accompanying patent application scope, abstract, and drawings), and / or so All steps in any method published may be combined in any way, except where at least some of these features and / or steps are mutually exclusive. Unless otherwise stated, this specification (including any accompanying patent application scope, abstract, and Each feature published in the figure) may be replaced by another feature of the same, equivalent, and similar use. Therefore, unless otherwise stated, each feature published is only an example of a series of equal or similar features. Limited to the details of the above embodiments. The present invention extends to this specification (including any accompanying patent application scope, abstract, and drawings) Any innovation or combination of innovations of the published features, or any innovation or combination of innovations of the published method steps. The paper loss degree applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling this page)
— — — — — — — ^ ·1111111 I— — — — — — — ^ · 1111111 I