TW492018B - Formation of thin film resistors - Google Patents

Abstract

The invention is directed to thin film resistors which may be imbedded in multi-layer printed circuit boards. The invention is also directed to structures for forming such thin film resistors and to methods for forming such structures, including the use of combustion chemical vapor deposition. The invention is also directed to chemical precursor solutions by which resistive materials can be deposited on a substrate by combustion chemical vapor deposition techniques.

Description

492018 A7 B7 五、發明説明（彳） (請先閲讀背面之注意事項再填寫本頁) 本發明係關於製造薄層電阻器，較佳地用於印刷電路 ’該薄層可包理於印刷電路板內。尤其是，本發明係關於 形成薄層電阻器’使用薄層的抵抗材料（resistive material) 其可由燃燒化學蒸汽沉積法作沉積。 發明背景 燃燒化學蒸汽沉積（C C V D 〃 ）爲新近發明的 C V D技術，可用以在開放大氣下作薄膜沉積。相較於其 它薄膜技術（包括傳統的C V D ) ，C C V D方法提供數 個優點。C C V D之關鍵優點爲其在開放大氣下沉積薄膜 的能力，無須任何昂貴的爐子、真空、或反應室。結果， 起始系統投資需求相較於真空系統可降低達9 0 %。不同 於須要特殊環境的其它技術，燃燒火焰可提供元素成分自 溶液、蒸汽、或氣體來源沉積所必須的環境。前驅物通常 溶於也作爲可燃燃料之溶劑。可在抽氣通風橱中、戶外、 或在控制環境氣體或壓力之小室中的氣壓及溫度下執行沉 積。 經濟部智慧財產局員工消費合作社印製 因爲C C V D通常使用溶液，此技術之重要的優點爲 可允許快速且簡單的摻雜物及化學計量的改變而減輕複雜 的薄膜之沉積。C C V D技術通常使用不貴的，可溶的前 驅物。此外，前驅物蒸汽壓力在C C V D不扮演角色，.因 爲溶解程序提供能量產生必須的離子成分。由調整溶液濃 度及成分，寬廣範圍的化學計量可快速且容易地沉積。此 外，C C V D方法允許沉積薄膜之化學組成與物理結構兩 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " ' ' 492018 JJ' 附件二：第88104509號專利申請案 中文說明書修正頁民國90年1月呈 五、發明說明（2 ) 者可爲特定的用途需求所訂做。 (請先閱讀背面之注意事項再填寫本頁) 不似傳統的C V D，C C V D方法不受限制於昂貴的 ’不可改變的低壓力反應室。因此，可將沉積火焰、火焰 排移動過基質而容易地塗佈大及/或複雜的表面面積。因 爲C C V D方法不限制於特定環境，使用者可連續地送材 料入塗層區而不須中斷，從而可用作批式程序。此外，使 用者可由簡單地控制火焰在該面積之存在時間，而將沉積 限制於基質特定的面積。最後，C C V D技術通常使用無 鹵素化學前驅物其可大幅地降低對環境的負面衝擊。 許多材料已經由C C V D技術沉積，以燃燒預調混合 之前驅物溶液作爲單獨熱源。此不貴的且有彈性的薄膜沉 積技術允許薄膜技術廣泛地使用。C C V D方法具有許多 相同彈性如熱噴霧，而能造成品質，如同傳統C V D的保 形薄膜。使用C C V D程序，在幾天內可沉積出所須之相 且成本相對較低。 經濟部智慧財產局員工消費合作社印製 C C V D方法之較佳體系詳細敘述於U.S. Application No · 08/691 ，853 登記於 1996 年 8 月 2 日 ，其講授倂入本文作爲„資料。依據該文件，C C V D 由近似超臨界液體及超臨界液體製造蒸汽形成薄膜、粉末 及奈米相塗層。較佳地，形成液體或似液體溶液液體其含 有中化學前驅物。溶液液體經調整至接近或高於臨界壓力 ，且之後恰在自經> 由約束管或噴嘴釋放前加熱至接近超臨 界溫度，造成氣體乘載於非常細微霧化或汽化的溶液液體 之中。將此溶液液體蒸汽燃燒形成火焰或送入火焰或電炬 -5- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明説明（3 ) (請先閲讀背面之注意事項再填寫本頁) 、電漿，且在火焰或電漿中或在基質表面之上將前驅物反 應於所欲相。由於電漿之高溫許多前驅物將在到達基質表 面之前反應。將基質置於近於或在火焰或電漿其中，且使 塗層作沉積。供選擇地，所形成材料可以奈米相粉末收集 〇 將溶液液體控制在近於或高於臨界壓力且近於臨界溫 度，可達成非常細微霧化、霧化、汽化或氣化。此溶解的 化學前驅物不須具有高蒸汽壓力，但高蒸汽壓力前驅物可 工作良好或優於較低蒸汽壓力前驅物。由加熱溶液液體恰 在噴嘴或約束管（霧化裝置）之前或其末端，在霧化之前 將該前驅物化學反應或溶解可用的時間降至最低。此方法 中各種有機金屬及無機前驅物可用以沉積塗層。該液體溶 液溶劑可選自任何液體或超臨界液體其中前驅物可形成溶 液。該液體或流體溶劑其本身可由不同的化合物之混合物 組成。， 經濟部智慧財產局員工消費合作社印製 降低含試藥液體之超臨界溫度可製造較好的塗層。許 多這些液體在S T P下不如液體穩定，且必須伴隨以壓力 瓶或低溫。爲便於製造液體或流體溶液其可僅可於高於周 遭之壓力下存在者，化學前驅物係選擇性地首先溶於初級 溶劑其係在常壓力穩定者。將此溶液置於一壓力容器’再 加入第二（或主要）液體或流體（其可與初級溶液互溶） 。此主要液體或流體具有較低超臨界溫度，且降低了達成 所欲氣化度所須的最高溫度。由形成高濃度初級溶液’許 多形成的較低濃度溶液係由第二及可能的額外溶液化合物 -6 - 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公釐） 492018 A7 ______B7_ 五、發明説明（4 ) (請先閲讀背面之注意事項再填寫本頁) 構成。通常，化合物在溶液中之比例愈高，則溶液性質愈 像化合物。這些外加液體與流體係作選擇以幫助化學前驅 物含有溶液作非常細微霧化，汽化或氣化。選擇最終溶液 混合物其具有低超臨界溫度可額外地使化學前驅物在霧化 裝置內反應之可能減到最少，也降低或除去在釋放區加熱 溶液之需要。在某些案例中溶液可在釋放區之前冷卻以保 持溶解度與液體穩定性。一個熟於超臨界液體溶液技藝之 人士可決定各種可能的溶液混合物而不須不適當的實驗。 選擇性地，壓力容器具有玻璃窗，或具有光學纖維及監控 器，允許目視測定可溶混性及溶質-溶劑相容性。相反地 若線上的濾光器阻塞或發現沈澱餘留在主要容器中，在此 情況下可能發生不相容。 經濟部智慧財產局員工消費合作社印製 另一優點係近於或高於其超臨界點的液體釋放，造成 快速膜而形成筒速氣體-蒸汽流。局速度氣體流有效地 降低在沉積表面前的氣體擴散邊界層，從而改良薄膜品質 及沉積效率。當流速高於火焰速度，必須用引導火或其它 點火方式以形成穩定態火焰。在某些案例中可能須要二或 更多個引導火以確保完全燃燒。在使用電漿炬時則不須引 導火’且熟於此技藝之人士可由下列操作條件容易地達成 高速。 含溶質流體不須使用燃料以燃燒。非可燃液體如水 N 2 ◦或C〇2，或難以燃燒之流體如氨，可用於溶解前驅 物或可作爲第二溶液化合物。這些將膨脹入火焰或電漿炬 ，該火焰或電漿炬係提供前驅物反應環境。此沉積可在高 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " ' 492018 A7 B7__ 五、發明説明（5 ) (請先閱讀背面之注意事項再填寫本頁) 於、低於或在常壓下執行。電漿炬在減壓力下作用良好。 火焰可在低到1 0陶爾穩定，且在高壓下操作良好。在較 低壓力下可形成冷火焰，甚至低於5 0 0°c。當兩者可在 開放大氣中操作，可優勢地在一反應室中於控制氣壓下執 行本發明方法，以保持空中的雜質不會進入生成的塗層。 許多電氣與光學塗層用途須要沒有該雜質存在於塗層。這 些用途通常須要薄膜，但也可沉積較厚之薄膜以用於熱障 礙，腐飽及耐磨用途。 經由進一步延長沉積時間另外可成長大塊材料，包括 單晶。由較高的沉積溫度可提供較快的定向附生沉積速率 ，由於較高的擴散速率係單晶厚膜或大塊材料沉積所必須 的。 C C V D爲一使用氧的火焰方法。當其可能使用 C C V D以沉積氧反應性材料，以C C V D沉積在火焰之 還原部分，一項較佳沉積氧反應性材料技術。如鎳爲相關 方法敘述於 U.S. Patent Application N 〇 . 經濟部智慧財產局員工消費合作社印製 09/067 ，975 ，登記於 1998 年 4 月 29 日， 其內容倂入本文作爲產考資料。 本發明敘述參考 U.S. Patent Application No . 〇9/0 6 7，9 7 5提供化學蒸汽沉積裝置及方法其中 塗層沉積區氣壓係由謹慎地控制並防護送入形成塗層之材 料而建立，且造成氣體自沉積區移除通過障礙區（在其中 該氣體流出該沉積區之平均速度高於每分鐘5 0英尺，且 較佳爲高於每分鐘1 0 0英尺）。此快速氣體流經障礙區 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐) " " 492018 A7 B7____ 五、發明説明（6 ) (請先閱讀背面之注意事項再填寫本頁) 本質上排除了氣體自大氣中向沉積區移動，在沉積區中其 可與塗層或塗層起源材料反應。對用於形成塗層之材料的 小心控制，可由塗層前驅物以固定比例加入液體介質而達 成。將液體介質送入反應區中而將其霧化，在其中將該液 體介質汽化並將塗層前驅物反應而形成反應的塗層前驅物 。供選擇地，將此塗層前驅物送入時可以是氣體，或其本 身或如其在載運氣體中之混合物。反應的塗層前驅物時常 部分地，全部地及少量地由反應的成分構成，其可以電漿 流入沉積區。此反應的塗層前驅物在沉積區接觸並沉積於 基質表面上形成塗層。一圍繞反應區的隋性氣流幕可防護 在該區的反應性塗層材料/電漿不被環境裝置材料所污染 ，或被大氣成分所污染。 在反應區中汽化該液體介質並使塗層前驅物反應須要 輸入能量。所須的能量可由不同的來源提供，如電阻加熱 、感應加熱、微波加熱、R F加熱、熱表面加熱及/或混 合以熱隋性氣體。 經濟部智慧財產局員工消費合作社印製 在此，非燃燒方法將引用作 ''控制氣壓燃燒化學蒸汽 沉積〃（CACCVD)。此技術提供相對的控制能量輸入速率， 賦予高的塗層沉積速率。在某些較佳的案例中，該液體介 質及/或第二氣體用於霧化該液體介質可以是用於 CACCVD的可燃燃料。特別重要者在於在或高於大氣壓力 下CACCVD可形成高品質黏著的沉積之能力，從而避免須 要在精巧的真空或類似的隔絕外罩內執行。爲這些原因， 在許多案例中，CACCVD薄膜塗層可在基質所在位置作原 本i氏張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） "I ' 492018 A7 B7 五、發明説明（ 處或''現場〃之實施。 (請先閱讀背面之注意事項再填寫本頁) 燃燒化學蒸汽沉積（CCVD)不適於須要無氧環境用途之 塗層。在該用途中，CACCVD ，其適合使用非燃燒能量來 源如熱氣體、加熱管、白熾能量、微波及供能質子如紅外 光或雷射來源。在這些用途中重要處爲所有使用之該液體 及氣爲無氧。將塗層前驅物送入時可以是溶液或懸浮於液 體中如氨或丙烷其各自地適合於氮化物或碳化物之沉積。 CACCVD方法及裝置提供在沉積區氣壓之控制，從而 在對溫度敏感或真空敏感基質上生產敏感塗層，其基質可 大於其它由傳統的真空室沉積技術所加工者。 經濟部智慧財產局員工消費合作社印製 另一項CACCVD之優點在其可塗佈基質而不CAC須要 額外的能量供給予基質。因此，此系統允許基質在其先前 不可承受溫度（其係大部分先前的系統中基質所遭遇到的情 況）作塗佈。例如鎳塗層可提供在聚醯亞胺板基質上而不會 造成基質變形。先前在大氣壓下沉積技術所不能提供化學 蒸汽之沉積金屬鎳，因爲其對氧有強的親和力，而聚醯亞 胺板基質的真空程序有問題，由於其加熱除去水氣且及當 在加熱及真空中傾向於尺寸不穩定。 圖示簡要敘沭 圖1展示本發明裝置之說明圖。 圖2展示薄膜及粉末之沉積的裝置說明圖，其係使用 近於^界及超臨界霧化。 用於本發明的氣化的詳細的圖示 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） _川_ 492018492018 A7 B7 V. Description of the invention (彳) (Please read the precautions on the back before filling out this page) This invention relates to the manufacture of thin layer resistors, preferably used in printed circuits. 'The thin layer can be used to encapsulate printed circuits. Inside the board. In particular, the present invention relates to the formation of thin layer resistors' using a thin layer of resistive material which can be deposited by a combustion chemical vapor deposition method. BACKGROUND OF THE INVENTION Combustion chemical vapor deposition (C C V D 〃) is a recently invented C V D technology that can be used for thin film deposition in an open atmosphere. Compared to other thin-film technologies (including traditional C V D), the C C V D method offers several advantages. The key advantage of C C V D is its ability to deposit thin films in an open atmosphere, without the need for any expensive furnace, vacuum, or reaction chamber. As a result, initial system investment requirements can be reduced by up to 90% compared to vacuum systems. Unlike other technologies that require special environments, a combustion flame provides the environment necessary for the deposition of elemental components from a solution, vapor, or gas source. The precursor is usually soluble in a solvent that is also used as a combustible fuel. Deposition can be performed in an exhaust fume hood, outdoors, or at atmospheric pressure and temperature in a chamber that controls ambient gas or pressure. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Because C C V D usually uses solutions, an important advantage of this technology is that it allows rapid and simple dopant and stoichiometric changes to reduce the deposition of complex thin films. C C V D technology usually uses inexpensive, soluble precursors. In addition, the precursor vapor pressure does not play a role in CCVD because the dissolution process provides energy to generate the necessary ionic components. By adjusting the solution concentration and composition, a wide range of stoichiometry can be deposited quickly and easily. In addition, the CCVD method allows the chemical composition and physical structure of the deposited film to be adapted to the Chinese National Standard (CNS) A4 specification (210X297 mm) " '492018 JJ' Annex II: Amendment to the Chinese specification of Patent Application No. 88104509 The Republic of China was published in January 1990. Fifth, the invention description (2) can be customized for specific needs. (Please read the notes on the back before filling this page.) Unlike the traditional C V D, the C C V D method is not limited to the expensive 'immutable low pressure reaction chamber'. Therefore, large and / or complex surface areas can be easily coated by moving the deposition flames and flame rows across the substrate. Because the C C V D method is not limited to a specific environment, users can continuously feed material into the coating area without interruption, which can be used as a batch process. In addition, the user can simply control the age of the flame in that area, while limiting deposition to a specific area of the substrate. Finally, C C V D technology typically uses halogen-free chemical precursors, which can significantly reduce the negative impact on the environment. Many materials have been deposited by CCVD technology, using a combustion pre-mixed precursor solution as a separate heat source. This inexpensive and flexible film deposition technology allows the widespread use of film technology. The C C V D method has many of the same resilience as thermal spray, which can result in quality, just like the traditional C V D conformal film. With the C C V D program, the required phase can be deposited in a few days at a relatively low cost. The preferred system for printing CCVD methods by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics is described in detail in US Application No. 08/691, 853, which was registered on August 2, 1996, and its lectures are incorporated into this document as "data. According to this document, CCVD manufactures vapors from approximately supercritical liquids and supercritical liquids to form films, powders, and nanophase coatings. Preferably, liquid or liquid-like solution liquids are formed containing chemical precursors. The solution liquid is adjusted to be close to or higher than Critical pressure, and then heated to near supercritical temperature just before release from the confinement tube or nozzle, causing gas to be carried in a very finely atomized or vaporized solution liquid. This solution liquid vapor is burned to form a flame Or send the flame or torch-5- This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Description of the invention (3) (Please read the precautions on the back before filling in this Page), plasma, and react the precursor to the desired phase in a flame or plasma or on the surface of the substrate. Due to the high temperature of the plasma, many precursors will reach React before reaching the surface of the substrate. Place the substrate near or in the flame or plasma, and deposit the coating. Alternatively, the formed material can be collected as a nanophase powder. The solution liquid is controlled near or high At the critical pressure and near the critical temperature, very fine atomization, atomization, vaporization or gasification can be achieved. The dissolved chemical precursor need not have a high vapor pressure, but the high vapor pressure precursor can work well or better than Low vapor pressure precursor. By heating the solution liquid just before the nozzle or confinement tube (atomization device) or at its end, the time available for chemical reaction or dissolution of the precursor before atomization is minimized. Various organics in this method Metal and inorganic precursors can be used to deposit the coating. The liquid solution solvent can be selected from any liquid or supercritical liquid where the precursor can form a solution. The liquid or fluid solvent itself can be composed of a mixture of different compounds. Ministry of Economic Affairs The property bureau employee consumer cooperative prints lowering the supercritical temperature of test-containing liquids to produce better coatings. Many of these liquids are used in STP is less stable than liquids and must be accompanied by a pressure bottle or low temperature. To facilitate the manufacture of liquids or fluid solutions that can exist only at higher pressures than surroundings, chemical precursors are selectively soluble first in the primary solvent. Those who are stable at normal pressure. Place this solution in a pressure vessel and then add a second (or main) liquid or fluid (which is miscible with the primary solution). This main liquid or fluid has a lower supercritical temperature and reduces The highest temperature required to achieve the desired degree of gasification. The formation of high-concentration primary solutions' many of the lower-concentration solutions are from the second and possible additional solution compounds-6-This paper applies Chinese National Standards (CNS) 4 Specifications (210X297 mm) 492018 A7 ______B7_ V. Description of Invention (4) (Please read the precautions on the back before filling this page). Generally, the higher the proportion of compound in solution, the more the solution behaves like a compound. These additional liquid and flow systems are chosen to help chemical precursors contain solutions for very fine atomization, vaporization or gasification. Choosing a final solution mixture with a low supercritical temperature can additionally minimize the possibility of chemical precursors reacting in the atomizing device, and also reduce or eliminate the need to heat the solution in the release zone. In some cases the solution may be cooled before the release zone to maintain solubility and liquid stability. A person skilled in the art of supercritical liquid solutions can determine the various possible solution mixtures without undue experimentation. Optionally, the pressure vessel has a glass window, or an optical fiber and a monitor, allowing visual determination of miscibility and solute-solvent compatibility. Conversely, if the filters on the line are blocked or if sediment is found in the main container, incompatibilities may occur in this case. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Another advantage is the release of liquid near or above its supercritical point, which causes a rapid film to form a barrel-speed gas-vapor stream. The local velocity gas flow effectively reduces the gas diffusion boundary layer before the deposition surface, thereby improving the film quality and deposition efficiency. When the flow velocity is higher than the flame speed, a pilot fire or other ignition method must be used to form a steady-state flame. In some cases two or more pilot fires may be required to ensure complete combustion. When using a plasma torch, it is not necessary to ignite a fire 'and a person skilled in the art can easily achieve high speed by the following operating conditions. Solute-containing fluids do not require fuel for combustion. Non-combustible liquids such as water N 2 or Co 2, or difficult-to-combustible fluids such as ammonia, can be used to dissolve precursors or as second solution compounds. These will expand into a flame or plasma torch, which provides a precursor reaction environment. This deposit can apply Chinese National Standard (CNS) A4 specification (210X297 mm) at high paper size. &Quot; '492018 A7 B7__ V. Description of the invention (5) (Please read the precautions on the back before filling this page). Perform below or under atmospheric pressure. Plasma torch works well under reduced pressure. The flames are stable down to 10 Taoer and operate well under high pressure. Cold flames can form at lower pressures, even below 500 ° C. When both can be operated in an open atmosphere, the method of the present invention can be advantageously performed in a reaction chamber under controlled air pressure to keep airborne impurities from entering the resulting coating. Many electrical and optical coating applications require this impurity to be absent from the coating. These applications usually require thin films, but thicker films can also be deposited for thermal barrier, saturating, and abrasion resistant applications. Larger materials, including single crystals, can be grown by further extending the deposition time. Higher deposition temperatures provide faster directional epitaxial deposition rates, as higher diffusion rates are necessary for single crystal thick film or bulk material deposition. C C V D is a flame method using oxygen. When it is possible to use C C V D to deposit oxygen-reactive materials, and C C V D to deposit in the reducing part of the flame, a preferred technique for depositing oxygen-reactive materials. For example, nickel is described in U.S. Patent Application No. 0. Printed on 09/067, 975 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, and registered on April 29, 1998. The description of the present invention provides a chemical vapor deposition device and method with reference to US Patent Application No. 〇9 / 0 6 7, 9 7 5 wherein the pressure of the coating deposition zone is established by carefully controlling and guarding the material sent into the coating, and Causes the gas to be removed from the deposition zone through the obstacle zone (where the average velocity of the gas flowing out of the deposition zone is above 50 feet per minute, and preferably above 100 feet per minute). This fast gas flows through the obstacle area. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) " " 492018 A7 B7____ V. Description of the invention (6) (Please read the precautions on the back before filling in this (Page) Essentially excludes the movement of gas from the atmosphere to the deposition zone where it can react with the coating or the material from which the coating originated. Careful control of the materials used to form the coating can be achieved by adding a coating precursor to the liquid medium in a fixed ratio. The liquid medium is fed into the reaction zone to be atomized, in which the liquid medium is vaporized and the coating precursor is reacted to form a reactive coating precursor. Alternatively, the coating precursor may be delivered as a gas, or as such, or as a mixture thereof in a carrier gas. The reactive coating precursors are often partially, wholly and in small amounts composed of reactive components, which can flow into the deposition zone in a plasma. This reactive coating precursor contacts the deposition zone and deposits on the surface of the substrate to form a coating. An inert gas curtain surrounding the reaction zone protects the reactive coating material / plasma in the zone from contamination by environmental device materials or by atmospheric constituents. Energy is required to vaporize the liquid medium in the reaction zone and react the coating precursor. The required energy can be provided by different sources, such as resistance heating, induction heating, microwave heating, RF heating, hot surface heating and / or mixing with hot inert gas. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Here, the non-combustion method will be cited as '' Controlled Pressure Combustion Chemical Vapor Deposition (CACCVD). This technology provides a relatively controlled rate of energy input, giving a high coating deposition rate. In some preferred cases, the liquid medium and / or the second gas used to atomize the liquid medium may be a combustible fuel for CACCVD. Of particular importance is the ability of CACCVD to form high-quality cohesive deposits at or above atmospheric pressure, thus avoiding the need to perform it in a delicate vacuum or similar insulating enclosure. For these reasons, in many cases, the CACCVD thin film coating can be used at the location of the substrate as the original i-scale standard applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) " I '492018 A7 B7 V. Description of the invention ( (Please read the notes on the back before filling out this page) Combustion chemical vapor deposition (CCVD) is not suitable for coatings that require an oxygen-free environment. In this application, CACCVD is suitable for use Non-combustion energy sources such as hot gases, heating tubes, incandescent energy, microwaves and energy supply protons such as infrared light or laser sources. The important point in these uses is that all the liquids and gases used are oxygen-free. Coating precursors The feed can be a solution or suspended in a liquid such as ammonia or propane, which are each suitable for the deposition of nitrides or carbides. CACCVD methods and devices provide control of the air pressure in the deposition zone, thus on a temperature- or vacuum-sensitive substrate Production of sensitive coatings with substrates larger than those processed by traditional vacuum chamber deposition techniques. Another CA printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The advantage of CCVD is that it can coat the substrate without requiring CAC to apply additional energy to the substrate. Therefore, this system allows the substrate to be coated at its previously unsustainable temperature, which is the situation encountered by the substrate in most previous systems. Cloth. For example, a nickel coating can be provided on a polyimide board substrate without causing substrate deformation. Previously, atmospheric metal deposition technology could not provide chemical vapor deposition of metallic nickel because of its strong affinity for oxygen, and the There is a problem with the vacuum procedure of the imine plate substrate, because it removes water vapor when heated and tends to be dimensionally unstable when heated and under vacuum. Brief description of the figure: Figure 1 shows an illustration of the device of the present invention. Figure 2 shows a film And device illustration of powder deposition, which uses near-world and supercritical atomization. Detailed illustration of the gasification used in the present invention This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ) _ 川 _ 492018

A7 B7 五、發明說明（8 ) 圖4 a - 4 c展示斷面圖，依據本發明形成薄層電阻 器的步驟；圖4 d爲圖4 c薄層電阻器之平面圖。 圖5 a - 5 c爲類似的斷面圖，說明依據本發明另一 方法形成薄層電阻器的步驟。 圖6爲圖4 c之電阻器的斷面，其係包埋於絕緣材料 中。 圖7爲依據本發明塗敷塗層裝置的局部斷面圖示。 圖8爲用於圖7的裝置塗敷頭的局部斷面特寫圖。 圖9 a — 9 g爲結構斷面其展現由自立式（free -standing)箔其經施塗以抗電抵抗材料製造電阻器之方法 圖1 0 a ，b及c說明在金屬箔上製備電阻器圖樣之 方法’其開始係由三層積層物，包括一導電性箱層、中間 可蝕刻層、及一層多孔抵抗材料。 主要元件對照 100 較佳的裝置 110 壓力調節方法 112 運送溶液貯存器 120 液體導管 122 輸入端 124 輸出端 126 出口站 128 方法 1 3 0 該區 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公餐） · 11 - -------------------丨訂---------線^一^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 492018 A7 B7 經濟部智慧財產局員工消費合作社印製 五、 發明說明4 ) 140 基 質 150 溫 度 調 節 方 法 152 接 觸 .160 氣 體 供 應 方 式 170 能 量 源 172 j巳巳 擇 供 能 點 180 點 火 輔 助 方 法 190 基 質 冷 卻 方 法 200 裝 置 4 霧 化 器 5 線 6 濾 器 2 溶 液 3 溶 液 容 器 1 J-^-r 疋 速 或 可 變 速 唧筒 7 電 阻 器 8 連 接 9 桿 10 外 罩 11 氧 體 A 供 輝 人匕、 線 12 小 的 出 □ 14 氧 體 A 燃 料 成 份 15 氧 化 成 份 16 混 △ \\ T // (請先閱讀背面之注意事項再填寫本頁) -線' 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- 492018 A7 B7 五、發明說明<0 ) 經濟部智慧財產局員工消費合作社印製 17 進 料 線 18 氧 體 B 供 應 線 19 進 料 線 20 供 m hUi、 孔 眼 13 流 動 控 制 器 21 氣 體 B 貯 存 容器 22 刖 馬區 物 供 應 器 23 電 源 供 應 器 24 基 質 400 電 阻 器 401 貼 片 或 薄 層 402 絕 緣 基 質 403 銅 貼 片 409 二 層 結 構 420 絕 緣 材料 層 710 塗 層 刖 馬區 物 712 液 體 介 質 714 形 成 716 混 合 或 保持 槽 718 啷 筒 720 過 濾 器 722 導 管 724 霧 化 1^ 726 反 應 (請先閱讀背面之注意事項再填寫本頁) _% 訂： •線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13- 492018 A7 B7 經濟部智慧財產局員工消費合作社印製 五、 發明說明<1 ) 728 沉積區 730 障礙區 732 氫氣瓶 734 調節閥 736 流量計 738 導管 740 基質 742 流量計 744 導管 746 氧氣瓶 748 調節閥 750 流量計 752 導管 754 惰性氣體瓶 756 調節閥 758 流量5十 760 導管 762 塗層 764 項圈 768 塗層頭 900 導電性箔 905 抵抗材料層 910 光罩 915 光罩 (請先閱讀背面之注意事項再填寫本頁) ;% . |線_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 14- 492018A7 B7 V. Description of the invention (8) Figures 4a-4c show cross-sectional views and the steps of forming a thin-layer resistor according to the present invention; Figure 4d is a plan view of the thin-layer resistor of Figure 4c. Figures 5a-5c are similar cross-sectional views illustrating the steps of forming a thin layer resistor according to another method of the present invention. Figure 6 is a section of the resistor of Figure 4c, which is embedded in an insulating material. FIG. 7 is a partial cross-sectional view of a coating device according to the present invention. FIG. 8 is a partial cross-sectional close-up view of the coating head used in the apparatus of FIG. 7. FIG. Figures 9a-9g are structural cross-sections showing a method of making a resistor from a free-standing foil which is coated with an electrically resistive material. Figures 10a, b and c illustrate the preparation of a resistor on a metal foil. The method of the device pattern starts with three layers of laminates, including a conductive box layer, an etchable layer in the middle, and a layer of porous resistive material. The main components are compared to 100. The better device 110. The pressure adjustment method 112. The solution storage tank 120. The liquid conduit 122. The input end 124. The output end 126. The exit station 128. The method 1 3 0 The paper size in this area applies to China National Standard (CNS) A4 (210 x 297 公 餐） · 11-------------------- 丨 Order --------- line ^ 一 ^ (Please read the notes on the back first Refill this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 492018 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description 4) 140 Substrate 150 Temperature adjustment method 152 Contact. 160 Gas supply method 170 Energy source 172 j 巳 巳 Energy point 180 Ignition assist method 190 Substrate cooling method 200 Device 4 Atomizer 5 Wire 6 Filter 2 Solution 3 Solution container 1 J-^-r High-speed or variable-speed drum 7 Resistor 8 Connection 9 rod 10 Outer cover 11 Oxygen A for dagger, wire 12 Small outlet □ 14 Oxygen A fuel 15 oxidizing ingredients 16 mixed △ \\ T // (Please read the precautions on the back before filling this page)-Thread 'This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -12- 492018 A7 B7 V. Description of the invention < 0) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 17 Feeding line 18 Oxygen B supply line 19 Feeding line 20 mhUi, eyelet 13 Flow controller 21 Gas B storage container 22 Submarine supply 23 Power supply 24 Matrix 400 Resistor 401 SMD or thin layer 402 Insulation matrix 403 Copper patch 409 Two-layer structure 420 Layer of insulating material 710 Coating of horses 712 Liquid medium 714 Form 716 Mix Or hold the groove 718 啷 tube 720 filter 722 tube 724 atomize 1 ^ 726 reaction (please read the precautions on the back before filling this page) _% Order: • line · This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) -13- 492018 A7 B7 Intellectual Property of the Ministry of Economic Affairs Printed by Employee Consumer Cooperatives 5. Description of the invention < 1) 728 Deposition zone 730 Obstacle zone 732 Hydrogen cylinder 734 Regulator valve 736 Flow meter 738 Pipe 740 Matrix 742 Flow meter 744 Pipe 746 Oxygen cylinder 748 Regulator valve 750 Flow meter 752 Pipe 754 Inert Gas bottle 756 regulating valve 758 flow 5 ten 760 conduit 762 coating 764 collar 768 coating head 900 conductive foil 905 resistive material layer 910 photomask 915 photomask (please read the precautions on the back before filling this page);%. | Line _ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 14- 492018

A7 B7 五、發明說明（12 ) 920 有機積層物 925 光罩層 !〇〇〇 導電性層 1 002 可蝕刻層/中間層 1 004 多孔層 10〇6 具圖案的保護層 主發明槪要 依據本發明薄層電阻器係形成於基質上，其電阻器可 刷電路板中。在基質上形成一薄層的抵抗材料。 形成薄層較佳的抵抗材料爲均質的金屬混合物，如鉑，及 介電材料，如氧化矽或氧化鋁。即使少量的介電材料混合 以金屬可大幅地增加金屬電阻。較佳地，由燃燒化學蒸汽 沉積（C C V D )將抵抗材料沉積在基質之上。在零原子 價金屬與介電材料之案例中，可由C C V D作金屬與介電 材料共沉積而達成均質的混合物。形成分離的抵抗材料的 貼片’將抵抗材料層的選擇部分蝕刻除去。如此，一層的 抵抗材料可覆蓋以一具圖案的抵抗（resist)，例如一曝光且 顯影的之光抵抗（光罩），且將抵抗材料下面層曝光部分以蝕 刻除去。此外本發明提供形成薄層、一層的抵抗材料的分 離的貼片、及導電性材料其與在抵抗材料層貼片之上空間 分隔位置作電氣接觸，該導電性材料提供抵抗材料貼片與 電子電路之電氣連接。可由選擇蝕刻方法形成該絕緣材料 、抵抗材料，及導電性材料之結構。 表紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐）-15 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 492018 A7 ______ B7 五、發明說明<3 ) (請先閱讀背面之注意事項再填寫本頁) 某些依據本發明由C C VD沉積之屋·材料爲，::、多孔僅、 。該多孔性可促進鈾刻，該蝕刻係由蝕刻劑侵襲下面基質 。多孔抵抗材料層之選擇部分經暴露於飩刻劑（其滲過保 ’護層中微孔並侵襲下面基質材料），從而破壞基質與抵抗 材料層間之黏著。由於抵抗材料層之薄度，當黏著破壞， 在暴露於蝕刻劑之區域的抵抗材料之薄層被破壞且被帶入 蝕刻劑，例如噴霧蝕刻劑。暴露於蝕刻劑係限制在一段時 間充分地除去（剝離）抵抗材料但不至長到足以引起基質 重要的破壞。 在本發明一個體系中，抵抗材料層係沉積於金屬箔上 ’特別是銅泊’ g亥范係用於形成導電性電路線條而與本發 明薄層電阻器作電氣接觸。分離的抵抗材料貼片其係由使 用光成像（photo imaging)及剝離鈾刻而形成。之後在箔上抵 抗材料層一邊包理介電材料，例如預浸帶。之後，使用光 成像，將此箔蝕刻成電路線條圖形。此電路線條圖形同樣 地包理於介電材料中。 經濟部智慧財產局員工消費合作社印製 因爲銅及/或氧化銅在沉積中可與抵抗材料層反應，在 本發明一個體系中，於抵抗材料層沉積之前，在銅表面之 上沉積了障礙層。此障礙層可爲金屬如鎳，或一層介電材 料如氧化矽，其很薄而不會中斷銅箔與沉積在其上的抵抗 材料間的電氣接觸。當抵抗材料層爲多孔性，剝離蝕刻可 由使用侵襲障礙層之飩刻劑完成。 較佳體系的詳細敘述 -16- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018A7 B7 V. Description of the invention (12) 920 Organic laminate 925 Photomask layer! 00 conductive layer 1 002 etchable layer / intermediate layer 1 004 porous layer 10 06 patterned protective layer The main invention should be based on this The invented thin layer resistor is formed on the substrate, and the resistor can be brushed into the circuit board. A thin layer of resistive material is formed on the substrate. The preferred materials for forming thin layers are homogeneous metal mixtures, such as platinum, and dielectric materials, such as silicon oxide or aluminum oxide. Even small amounts of dielectric materials mixed with metal can greatly increase metal resistance. Preferably, a resistive material is deposited on the substrate by combustion chemical vapor deposition (C C V D). In the case of a zero atomic metal and a dielectric material, a homogeneous mixture can be achieved by co-depositing C C V D as a metal and a dielectric material. A patch ' forming a separate resist material will etch away selected portions of the resist material layer. In this way, a layer of resistive material can be covered with a patterned resist, such as an exposed and developed light resist (reticle), and the exposed portion of the resistive material layer can be removed by etching. In addition, the present invention provides a thin layer, a separated patch of a resistive material, and a conductive material that is in electrical contact with a spaced apart position above the resistive material layer patch. The conductive material provides a resistive material patch and an electron. Electrical connection of the circuit. The structure of the insulating material, the resistive material, and the conductive material can be formed by a selective etching method. The paper size of the table is applicable to China National Standard (CNS) A4 (21 × 297 mm) -15 -------------------- Order ------- --Line (Please read the notes on the back before filling this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 492018 A7 ______ B7 V. Invention Description < 3) (Please read the notes on the back before filling this page ) Some of the houses and materials deposited by CC VD according to the present invention are ::, porous only,. This porosity promotes uranium engraving, which is caused by the etchant attacking the underlying substrate. Selected portions of the porous resist material layer are exposed to an etchant (which penetrates the micropores in the protective layer and invades the underlying matrix material), thereby destroying the adhesion between the matrix and the resist material layer. Due to the thinness of the resist material layer, when the adhesive is destroyed, the thin layer of resist material in the area exposed to the etchant is destroyed and brought into the etchant, such as spray etchant. Exposure to the etchant is limited to sufficient time to remove (peel off) the resist material but not long enough to cause significant damage to the substrate. In one system of the present invention, a layer of resistive material is deposited on a metal foil, in particular a copper layer, and is used to form conductive circuit lines for making electrical contact with the thin-layer resistor of the present invention. Separate resist material patches are formed by using photo imaging and stripping of uranium. A dielectric material, such as a prepreg tape, is then wrapped on the foil against the material layer. This foil is then etched into a circuit line pattern using light imaging. This circuit line pattern is similarly encapsulated in a dielectric material. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs because copper and / or copper oxide can react with the resistive material layer during deposition. In one system of the present invention, a barrier layer is deposited on the copper surface before the resistive material layer is deposited. . This barrier layer can be a metal such as nickel, or a layer of dielectric material such as silicon oxide, which is thin without interrupting the electrical contact between the copper foil and the resist material deposited thereon. When the resist material layer is porous, peel etching can be performed by using an etchant that invades the barrier layer. Detailed description of the better system -16- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 492018

A7 B7 五、發明說明（14 ) 由參照下列本發明較佳體系詳細的敘述及圖，可更直 接地瞭解本發明。 (請先閱讀背面之注意事項再填寫本頁) 在此所用術語係僅爲敘述特別的體系之目的，且並非 要限制。必須註明的是，當用於本發明及申請專利範圍， 單數型式'' a 〃 、 '' a η 〃及'' t h e 〃包含複數，除非 文中另外淸楚地指定。 貫穿此專利，其中引用文獻，這些文獻之揭示係以其 全體倂入本文作爲f考資料，以更完整地敘述本發明有關 此技藝之現況。 經濟部智慧財彥局員工消費合作社印製 本發明提供之方法係以選擇材料塗佈一基質。此方法 包含，在第一選擇之溫度及第一選擇之壓力下，溶入適合 的載體從而形成運送溶液，其中一個或更多試藥可反應（ 其中，就單一前驅物試藥而言，試藥由溶液沉澱或改變其 化學鍵係在此稱爲''反應〃）形成選擇材料。在實際沉積 的某些時間之前，將基質置於一區其具有第二選擇之壓力 。此第二選擇之壓力可常壓下且通常高於2 0陶爾。之後 使用壓力調節方法，將運送溶液加壓至第三選擇壓力（其 高此第二選擇壓力）。熟於此技藝之人士將承認有許多適 合的壓力調節方法，包括，但不限於壓縮機等。接著，將 此加壓的運送溶液導入液體導管其帶有一輸入端，且相應 的輸出端（其帶有溫度調節方法置於其上以調節在輸出端 溶液溫度）。導管之輸出末端另包含出口站以導引導管中 之該液體進入此區於基質方向。當用於其它噴霧及霧化用 途，該出口站形狀可類似於噴嘴或拘束管。之後使用溫度 -17- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _B7_ 五、發明說明<5 ) 請 先 閱 讀 背 面 之 注 意 事 項 再 填 本 頁 調節方法將溶液加熱至第二選擇溫度，在高於或低於溶液 之臨界溫度T。的5 0 °C之內；同時在第二選擇溫度使用壓 力調節方法，保持第三選擇之壓力高於第二選擇之壓力且 高於溶液相應液相曲線或臨界壓力P。。之後，將此加壓的 、加熱溶液導經導管之出口站進入此區，以在基質方向上 製造霧化溶液噴霧。當將溶液導入此區一或更多的選擇氣 將混合入霧化溶液而噴霧形成可反應噴霧，且之後，在選 擇的供能點將此可反應噴霧暴露於能量源。此能量源提供 充分地能量以使此可反應噴霧反應（其中包含一或更多的 運送溶液試藥）從而形成材料並以之塗佈基質。 在此方法另一體系中，此能量源包含火焰源且選擇供 能點包含點火點。在一供選擇的體系中此能量源包含電漿 炬。 在此方法另一體系中，此區第二選擇之壓力爲常壓。 在另一體系中，霧化溶液噴霧爲蒸汽或氣溶膠其最大 滴徑低於2 // m。 經濟部智慧財產局員工消費合作社印製 在另一體系中，將此區第二選擇之壓力降低以製造溫 度低於1 0 0 0 °C之燃燒火焰。 在另一體系中，載體爲丙烷且運送溶液包含至少5〇 %體積的丙烷。在另一體系中，運送溶液更包含丁醇、甲 醇、異丙醇、甲苯，或其組合。在另一體系中，載體係選 擇使運送溶液其在標準溫度及壓力一段時間內充分地執行 此方法而基本上不沉澱。 在本方法一供選擇的體系中，在加壓階段之前、前中 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -18- 492018 A7 B7 五、發明說明1(6 ) 、之後使用一加壓的容器，將一在標準溫度與壓力之氣體 也與運送溶液接觸，在選擇之壓力其充分地形成液體或超 臨界液體（取決於溫度）。在一較佳體系中，含有標準溫 度與壓力之氣體運送溶液，可在選擇之壓力下一段時間內 基本上不沉殿，以充分地執彳了此方法。在另一體系中’運 送溶液之試藥濃度係介於0 · 〇 〇 〇 5 Μ與0 · 0 5 Μ。 在另一體系中，導管出口之末端更包含一液體引進站 口站之前， 液。該引導 ，且在導引此加壓的、加熱溶液經過導管之出 經該液體引進站將流體加入此加壓的、加熱溶 形成合倂的溶液其帶有降低的超臨界溫度。 在另一體系中，各個一或更多試藥具有蒸汽壓力不低 於約2 5 %的載體蒸汽壓力。 在一更佳體 在另一體系中，導管出口之末端包含管道其內徑爲2 至100〇//m，更佳地1〇至25〇//m。 5 // m之管 道。而在另一項較佳體系中，導管出口之末端包含內徑爲 請 先 閱 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 系中，導管出口之末端包含內徑爲2 5至1 2 5 0至1〇0 //m之管道。 熱其導管之 體系中，電 阻加熱導管 經濟部智慧財產局員工消費合作社印製 在另一體系中，溫度調節方法包含電阻加 方法，由電源施以選擇電壓之電流。在一較佳 壓低於1 1 5伏特。而在另一較佳體系中，電 之方法包含接觸位置在出口站的4 m m之內。 此外，本發明也提供上述方法，其中載體與一或更多 試藥係選擇使此第二選擇溫度爲常溫。 上述方法之執行中，對基質作塗佈之材料包含金屬， -19- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^2〇18 經濟部智慧財產局員工消費合作社印製 A7 B7 i、發明說明（17 ) 金屬或準金屬氧化物，或金屬與金屬或準金屬氧化物之混 合物。 在另一體系中，可反應噴霧包含可燃噴霧其帶有可燃 噴霧速度，且其中可燃噴霧速度大於火焰源在點火點之火 炮速度，且更包含一或更多點火輔助方法以點燃此可燃噴 _。在一較佳體系中，各個一或更多點火輔助方法包含引 導火。在另一體系中，可燃噴霧速度大於一馬赫。 在另一體系中，點火點或火焰正面係保持在出口站2 c m以內。 本發明也提供方法，其中在曝光階段使用基質冷卻方 '法以冷卻基質。在一較佳體系中，基質冷卻方法包含引水 入基質之方法。然而，一個熟於此技藝之人士將承認可使 用許多其它適合的冷卻方法。 在另一體系中，材料塗佈之基質其厚度低於1 0 0 n m。在另一體系中，材料塗佈基質包含分類組成物。在 3 —體系中，材料塗佈基質包含無定形材料。在另一體系 中’材料塗佈基質包含氮化物、碳化物、硼化物、金屬或 其匕非含氧材料。 本發明也提供方法更包含將可反應噴霧環繞以流動選 擇鞘氣體，從而減少進入之雜質並保持較佳的沉積環境。 在一較佳體系中，此第二選擇之壓力係高於2 0陶爾 〇 #照圖1，較佳的裝置1 〇 〇包含壓力調節方法 1 1 〇 ’如啷筒，以加壓至第一選擇之壓力於運送溶液τ --------------------訂---------線 ^n· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -20- 492018 A7 B7 五、發明說明<8 ) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 (也稱爲 ''前驅物溶液〃）在運送溶液貯存器1 1 2中， 其中運送溶液T包含適合的載體其帶有溶解在其中的一或 更多試藥（其可反應形成選擇的材料），且在其中加壓 •1 1 0方式可保持第一選擇之壓力高於相應液相曲線（若 溫度低於T。）或運送溶液T之臨界壓力P。，在運送溶液 T之溫度，液體導管120其帶有輸入端122 ’而與運 送溶液貯存器1 1 2作液體連接，且相對的輸出端1 2 4 帶有出口站1 2 6定向係將在導管1 2 0中之該液體導引 至該區1 3 0其第二選擇之壓力低於第一選擇之壓力，且 對基質方向140 ，其中出口站126更包含方法128 (見圖2及3，霧化器4 )以霧化溶液而形成霧化溶液噴 霧N，將溫度調節方法1 5 0置於與該液體導管1 2 0之 輸出端1 2 4作熱連接以調節在輸出端1 2 4之溶液溫度 在高於或低於溶液之超臨界溫度T。的5 0 °C，用氣體供應 方式1 6 0以混合一或更多氣體（例如氧）（未展示）而 注入霧化溶液噴霧N，而形成可反應噴霧’能量源1 7〇 在選擇供能點1 7 2可與反應噴霧反應，其中由此能量源 1 7 0提供充分地能量以與可反應噴霧在此區1 3 0反應 ，在此第二選擇壓力從而塗佈基質1 4 0 ° 在此裝置之另一體系中，此能量源1 7 〇包含火焰源 及選擇供能點1 7 2，其包含一點火點。在一供選擇的體 系中，此能量源1 7 0包含電漿炬。在另一體系中’出口 站126更包含壓力約束管（見圖3’電阻器7)。 在此裝置之另一體系中，此區第二選擇之壓力係常壓 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 21 - 492018 Α7 _ Β7 五、發明說明《9 ) 下。 在另一體系中’霧化溶液噴霧N係蒸汽或氣溶膠，其 最大液滴徑低於2 // m。 在另一體系中，將此區第二選擇之壓力降低以製造溫 度低於1 0 0 0 °C之燃燒火焰。 在另一體系中，載體爲丙烷且運送溶液包含至少5〇 %體積的丙院。在另一'體系中’運送溶液更包含丁醇、甲 醇、異丙醇、甲苯，或其組合。在另一體系中，載體係選 擇使運送溶液在標準溫度及壓力一段時間內充分地執行此 方法而基本上不沉澱。 在此裝置一供選擇的體系中，假設一加壓的容器（未 展示）且標準溫度與壓力之氣體也與運送溶液接觸，在選 擇之壓力下充分地形成液體或超臨界液體。在一較佳體系 中，運送溶液其含有標準溫度與壓力之氣體，係在選擇之 壓力下一段時間充分地執行此方法而基本上不沉澱。在另 一體系中，運送溶液之試藥濃度係介於0 · 0 0 0 5 Μ與 〇·〇5 Μ之間。 經濟部智慧財產局員工消費合作社印製 在另一體系中，導管1 2 0之出口端1 2 4更包含液 體引進站（見圖2，進料線1 7或1 9 )，且在經導管 1 2 0之出口站1 2 6引入此加壓的、加熱溶液之前，經 該液體引進站將液體加入此加壓的、加熱溶液。該導引形 成合倂的溶液其帶有降低的超臨界溫度。 在另一體系中，各個一或更多試藥之蒸汽壓力不低於 約載體蒸汽壓力的2 5 %。 -22- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明釦) 在另一體系中，導管出口之末端包含管道其內徑爲2 至1 00 0//m，更佳爲1 〇至2 5 Oem。在一更佳體 (請先閱讀背面之注意事項再填寫本頁) 系中，導管出口之末端包含內徑爲2 5至1 2 5 //m之管 道。而在另一項較佳體系中，導管出口之末端包含內徑爲 5〇至1 〇〇#πι之管道。 在另一體系中，溫度調節方法1 5 0係包含電阻方法 ’其係由電源施以選擇電壓之電流加熱導管。在一較佳體 系中’電壓低於1 1 5伏特。而在另一較佳體系中，以電 阻方法加熱導管，包含將接觸1 5 2置於出口站1 2 6的 4 m m之內。 此外，上述裝置之應用中載體及一或更多試藥係選擇 使此第二選擇溫度爲常溫。 前述裝置之使用中材料塗佈基質1 4 0包含金屬。供 選擇地，材料塗佈基質1 4 0包含一或更多金屬氧化物。 而在另一體系中，材料塗佈基質1 4 0包含至少9 0%的 氧化矽。 經濟部智慧財產局員工消費合作社印製 在另一體系中，可反應噴霧包含可燃噴霧其帶有可燃 噴霧速度，且其中可燃噴霧速度大於火焰源在點火點 1 7 2之火焰速度，且更包含一或更多點火輔助方法 1 8 0以點燃可燃噴霧。在一較佳體系中各個一或更多點 火輔助方法1 8 0包含引導火。在另一體系中，可燃噴霧 速度大於一*馬赫。 在另一體系中，點火點1 7 2或火焰正面係保持在出 口站2 c m之內。 -23- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明如 ) (請先閱讀背面之注意事項再填寫本頁) 本發明也提供基質冷卻方法1 9 0以冷卻基質1 4 0 。在一較佳體系中，基質冷卻方法1 9 0包含引入水至基 質1 4 0上之方法。然而，一個熟於此技藝之人士將承認 可使用許多其它適合的冷卻方法。 在另一體系中，材料塗佈基質1 4 0具有低於1 〇 〇 n m之厚度。在另一體系中，材料塗佈基質1 4 0包含分 類組成物。 更有一裝置，提供包含將環繞可反應噴霧之選擇鞘氣 體作流動之方法（見圖2及3，進料線1 7或1 9 )，從 而減少吸入雜質並保持較佳的沉積環境。 在一較佳體系中，此第二選擇之壓力係高於2 0陶爾 〇 在此方法另一體系中，此能量源包含火焰源與包含點 火點之選擇供能點。在一供選擇的體系中，此能量源包含 電槳炬，熱氣體等。 在另一項粉末形成方法的較佳體系中，運送溶液濃度 係介於〇·005M與5M。 經濟部智慧財產局員工消費合作社印製 爲簡化操作，宜在室溫下將前驅物/溶劑溶液加壓注 入霧化裝置。溶液之加熱應在最終階段，恰在溶液釋放入 較低壓力區之前。該後階段加熱可將較高的溫度下發生的 反應及不互溶性降至最低發生。保持溶液低於此超臨界溫 度直到霧化，可保持前驅物在此區之溶解量在正常溶解度 ，且降低在溶液中發展出嚴重的溶劑-前驅物濃度梯度的 可能性。這些溶解度梯度係超臨界溶劑在壓力下溶液強度 -24- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明ί2 ) (請先閱讀背面之注意事項再填寫本頁) 敏感性。小的壓力梯度（其可沿前驅物溶劑系統傳送而發 展）已發現可導致溶解度重要的改變。例如在3 0 8。Κ， 將壓力由7 5 a tm增加至8 5 a tm，π定在二氧化碳中 之溶解度可增加1 0 0 0倍。見 V.Krukoms ， vvA7 B7 V. Description of the invention (14) By referring to the following detailed description and drawings of the preferred system of the present invention, the present invention can be understood more directly. (Please read the notes on the back before filling out this page.) The terminology used here is for the purpose of describing a particular system and is not intended to be limiting. It must be noted that when used in the scope of the present invention and patent application, the singular forms `` a 〃, '' a η 〃, and `` t h e 〃 '' include plurals unless otherwise specified in the text. Throughout this patent, references are cited, and the disclosure of these documents is incorporated herein by reference as a reference material to more fully describe the present state of the art regarding this technology. Printed by the Consumer Finance Cooperative of the Smart Finance and Economics Bureau of the Ministry of Economics The method provided by the present invention is to coat a substrate with selected materials. This method includes dissolving a suitable carrier at a first selected temperature and a first selected pressure to form a transport solution, in which one or more reagents can react (wherein for a single precursor reagent, the test A drug is precipitated from a solution or its chemical bond system is changed (herein referred to as `` reaction '') to form a selected material. Before some time of actual deposition, the substrate is placed in a zone where it has a second pressure of choice. The pressure of this second option may be at atmospheric pressure and is usually higher than 20 Tao. Thereafter, using a pressure adjustment method, the transport solution is pressurized to a third selection pressure (which is higher than the second selection pressure). Those skilled in the art will recognize that there are many suitable pressure regulation methods, including, but not limited to, compressors. This pressurized transport solution is then introduced into the liquid conduit with an input end and a corresponding output end (which is placed thereon with a temperature adjustment method to adjust the solution temperature at the output end). The output end of the catheter also includes an exit station to guide the liquid in the catheter into this area in the direction of the matrix. When used for other spraying and atomizing applications, the exit station can be shaped like a nozzle or restraint tube. After use temperature -17- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 _B7_ V. Description of the invention < 5) Please read the precautions on the back before filling this page The solution is heated to a second selected temperature, above or below the critical temperature T of the solution. Within 50 ° C of the temperature; at the same time, use the pressure adjustment method at the second selection temperature to keep the pressure of the third selection higher than the pressure of the second selection and higher than the corresponding liquid phase curve or critical pressure P of the solution. . Afterwards, this pressurized, heated solution is guided through the exit station of the catheter into this area to make a nebulizing solution spray in the direction of the substrate. When the solution is introduced into this zone, one or more selection gases are mixed into the atomized solution to be sprayed to form a reactive spray, and thereafter, the reactive spray is exposed to an energy source at a selected energy supply point. This energy source provides sufficient energy to cause the reactive spray reaction (which contains one or more transport solution reagents) to form a material and coat the substrate therewith. In another system of this method, the energy source includes a flame source and the selected energy point includes an ignition point. In an alternative system this energy source includes a plasma torch. In another system of this method, the second selected pressure in this zone is normal pressure. In another system, the atomized solution is sprayed as steam or aerosol with a maximum droplet diameter of less than 2 // m. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In another system, the pressure of the second option in this area is reduced to create a combustion flame with a temperature below 1000 ° C. In another system, the carrier is propane and the shipping solution contains at least 50% by volume of propane. In another system, the shipping solution further comprises butanol, methanol, isopropanol, toluene, or a combination thereof. In another system, the carrier is selected such that the transport solution performs the process adequately for a period of time at standard temperature and pressure without substantial precipitation. In the alternative system of this method, before the pressurization stage, the paper size of the Chinese paper applies the Chinese National Standard (CNS) A4 (210 X 297 mm) -18- 492018 A7 B7 V. Description of the invention 1 (6 ) After that, a pressurized container is used, and a gas at a standard temperature and pressure is also contacted with the transport solution, and at a selected pressure, it fully forms a liquid or a supercritical liquid (depending on the temperature). In a preferred system, a gas transport solution containing a standard temperature and pressure can be substantially unsinkable for a period of time at a selected pressure to fully perform this method. In another system, the reagent concentration of the 'transport solution is between 0.005 OM and 0.5 M. In another system, the end of the outlet of the catheter further contains a liquid before the liquid introduction station. The guide, and while directing the pressurized, heated solution out of the conduit, fluid is added to the pressurized, heated solution to form a compound solution through the liquid introduction station with a reduced supercritical temperature. In another system, each of the one or more reagents has a carrier vapor pressure of not less than about 25%. In a better system, in another system, the end of the catheter outlet comprises a pipe having an inner diameter of 2 to 100 // m, more preferably 10 to 25 // m. 5 // m pipe. In another preferred system, the end of the catheter exit contains an inner diameter. Please read the precautions on the back before filling out this page. The end of the catheter exit contains an inner diameter of 25 to 125. 0 // m of pipes. In the system that heats its conduits, resistance-heated conduits are printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In another system, the temperature adjustment method includes a resistance plus method in which a current of a selected voltage is applied by a power source. At a preferred voltage below 115 volts. In another preferred system, the electrical method includes a contact location within 4 mm of the exit station. In addition, the present invention also provides the above method, wherein the carrier and one or more reagents are selected so that the second selected temperature is normal temperature. In the implementation of the above method, the material for coating the substrate contains metal. -19- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ^ 2018 Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printing A7 B7 i, Description of the invention (17) Metal or metalloid oxide, or a mixture of metal and metal or metalloid oxide. In another system, the combustible spray includes a combustible spray with a combustible spray velocity, and the combustible spray velocity is greater than the gun speed of the flame source at the ignition point, and further includes one or more ignition assist methods to ignite the combustible spray_ . In a preferred system, each of the one or more ignition assist methods includes a pilot. In another system, the flammable spray velocity is greater than one Mach. In another system, the ignition point or the flame front is kept within 2 cm of the exit station. The invention also provides a method in which a substrate cooling method is used during the exposure phase to cool the substrate. In a preferred system, the substrate cooling method includes a method of introducing water into the substrate. However, one skilled in the art will recognize that many other suitable cooling methods can be used. In another system, the thickness of the material-coated substrate is less than 100 nm. In another system, the material coating substrate comprises a classified composition. In the 3-system, the material coating matrix comprises an amorphous material. In another system, the ' material coating substrate comprises nitrides, carbides, borides, metals, or non-oxygen-containing materials thereof. The present invention also provides a method which further comprises orienting a reactive spray to flow a selective sheath gas, thereby reducing incoming impurities and maintaining a better deposition environment. In a preferred system, the pressure of this second option is higher than 20 Taoer ## As shown in FIG. 1, the preferred device 100 includes a pressure adjustment method 1 1 0 ′, such as a drum, to pressurize to the first The pressure of a choice is to transport the solution τ -------------------- Order --------- line ^ n · (Please read the precautions on the back first (Fill in this page again) This paper size is in accordance with China National Standard (CNS) A4 (210 x 297 mm) -20- 492018 A7 B7 V. Invention Description < 8) (Please read the precautions on the back before filling this page ) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (also known as `` precursor solution '') in the transport solution reservoir 1 12 where transport solution T contains a suitable carrier with one or more dissolved in it Multiple reagents (which can react to form the selected material) and pressurize them in the • 1 10 mode to maintain the first selected pressure above the corresponding liquid phase curve (if the temperature is below T.) or the criticality of transporting the solution T Pressure P. At the temperature of the transport solution T, the liquid conduit 120 has an input end 122 'and is in liquid connection with the transport solution reservoir 1 1 2 and the opposite output end 1 2 4 with an exit station 1 2 6 orientation system will be at The liquid in the conduit 1 2 0 is guided to the zone 1 3 0. The pressure of the second choice is lower than the pressure of the first choice and is 140 to the matrix direction. The exit station 126 further includes the method 128 (see Figures 2 and 3). Atomizer 4) Atomized solution spray N is formed by atomizing the solution, and the temperature adjustment method 1 50 is placed in thermal connection with the output end 1 2 4 of the liquid duct 1 2 0 to adjust the output end 1 2 The solution temperature of 4 is above or below the supercritical temperature T of the solution. 50 ° C, using a gas supply method 160 to mix one or more gases (such as oxygen) (not shown) and inject the atomizing solution spray N to form a reactive spray 'energy source 1 70. The energy point 1 7 2 can react with the reactive spray, wherein the energy source 1 70 provides sufficient energy to react with the reactive spray in this zone 1 3 0, and here the second selective pressure is used to coat the substrate 1 40 ° In another system of the device, the energy source 170 includes a flame source and a selective energy point 170, which includes an ignition point. In an alternative system, the energy source 170 comprises a plasma torch. In another system, the 'exit station 126 further includes a pressure confinement tube (see Figure 3' resistor 7). In another system of this device, the pressure of the second choice in this area is atmospheric pressure. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) _ 21-492018 Α7 _ B7 V. Description of the invention " 9). In another system, the atomizing solution sprays N-based steam or aerosol, and the maximum droplet diameter is less than 2 // m. In another system, the pressure of the second option in this zone is reduced to produce a combustion flame at a temperature below 1000 ° C. In another system, the carrier is propane and the shipping solution contains at least 50% by volume of Propane. In another 'system' the delivery solution further comprises butanol, methanol, isopropanol, toluene, or a combination thereof. In another system, the carrier is selected so that the transport solution performs the method adequately for a period of time at standard temperature and pressure without substantial precipitation. In an alternative system of this device, it is assumed that a pressurized container (not shown) and a gas of standard temperature and pressure are also in contact with the transport solution to form a liquid or supercritical liquid sufficiently under the selected pressure. In a preferred system, the transport solution contains a gas at a standard temperature and pressure, and the method is performed adequately for a period of time at a selected pressure without substantial precipitation. In another system, the test solution concentration of the transport solution is between 0. 0 0 05 M and 0. 05 M. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed in another system. The outlet end 1 2 4 of the duct 120 also contains a liquid introduction station (see Figure 2, the feed line 17 or 19), and Before introducing the pressurized, heated solution at the exit station 1 2 6 of 1, 20, the liquid was added to the pressurized, heated solution through the liquid introduction station. The guide forms a hydrazone solution with a reduced supercritical temperature. In another system, the vapor pressure of each of the one or more reagents is not less than about 25% of the vapor pressure of the carrier. -22- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 _ B7 V. Description of the invention) In another system, the end of the duct exit contains a pipe whose inner diameter is 2 to 1 00 0 // m, more preferably 10 to 2 5 Oem. In a better body (please read the precautions on the back before filling out this page), the end of the catheter exit contains a pipe with an inner diameter of 2 5 to 1 2 5 // m. In another preferred system, the end of the outlet of the catheter comprises a pipe having an inner diameter of 50 to 100 # πι. In another system, the temperature adjustment method 150 includes a resistance method ′ which heats the duct by applying a current of a selected voltage from a power source. In a preferred system, the voltage is below 115 volts. In another preferred system, the conduit is heated in a resistive manner, which includes placing the contacts 152 within 4 mm of the exit station 126. In addition, in the application of the above device, the carrier and one or more reagents are selected so that this second selected temperature is normal temperature. The material-coated substrate 14 in use of the aforementioned device contains a metal. Alternatively, the material coating substrate 140 comprises one or more metal oxides. In another system, the material-coated substrate 140 contains at least 90% silica. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed in another system, the reactive spray contains a combustible spray with a combustible spray velocity, and the combustible spray velocity is greater than the flame velocity of the flame source at the ignition point 172, and more One or more ignition assist methods 180 to ignite a flammable spray. In a preferred system, each of the one or more ignition assistance methods 180 includes a pilot fire. In another system, the flammable spray velocity is greater than one Mach. In another system, the ignition point 172 or the flame front is kept within 2 cm of the exit station. -23- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Description of the invention (such as) (Please read the notes on the back before filling this page) The invention also provides substrate cooling Method 190 to cool the substrate 1400. In a preferred system, the substrate cooling method 190 includes a method of introducing water to the substrate 140. However, a person skilled in the art will recognize that many other suitable cooling methods can be used. In another system, the material coated substrate 14 has a thickness of less than 1000 nm. In another system, the material coating substrate 140 comprises a classified composition. There is also a device that provides a method comprising flowing a selected sheath gas surrounding a reactive spray (see Figures 2 and 3, feed lines 17 or 19), thereby reducing inhaled impurities and maintaining a better deposition environment. In a preferred system, the pressure of the second option is higher than 20 Tao. In another system of this method, the energy source includes a flame source and a selected energy point including an ignition point. In an alternative system, the energy source includes an electric torch, hot gas, and so on. In another preferred system of the powder forming method, the transport solution concentration is between 0.005M and 5M. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs To simplify the operation, it is advisable to inject the precursor / solvent solution into the atomizer under pressure at room temperature. The heating of the solution should be in the final stage, just before the solution is released into the lower pressure zone. This post-stage heating can minimize the reactions and immiscibility that occur at higher temperatures. Keeping the solution below this supercritical temperature until atomization can keep the dissolved amount of the precursor in this zone at normal solubility, and reduce the possibility of developing a serious solvent-precursor concentration gradient in the solution. These solubility gradients are solutions of supercritical solvents under pressure. -24- This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Description of the invention 2) (Please read the note on the back first) Matters need to be completed on this page) Sensitivity. Small pressure gradients, which can be developed along transport of the precursor solvent system, have been found to cause significant changes in solubility. For example at 3 0 8. K, increasing the pressure from 7 5 a tm to 8 5 a tm, the solubility of π in carbon dioxide can be increased by a factor of 100. See V.Krukoms, vv

Supercritical Fluid nucleation of Difficult to Comminute Solids ，發表於AIChE會議，舊金山，1984年11月 2 5 - 3 0日。該溶解度改變係潛在性有害的，因爲它們 可引起前驅物自溶液中排出且沉澱或反應過早，阻塞管線 及濾器。 經濟部智慧財產局員工消費合作社印製 噴嘴壓力及高速度之快速下降將引起溶液膨賬且霧化 。當溶質濃度於正常溶解度範圍內，宜於近於超臨界而操 作本發明之霧化系統，當射入低壓力後前驅物係有效地停 留於溶液中區。術語 ''有效地在溶液中〃必須合倂發生方 法，當將溶液（其中溶質濃度高於正常溶劑強度）射入低 壓力區。在此案例中，突然壓力下降造成高過飽和比（其 係關於激變的溶質成核條件）。若激變的成核快速地自所 有溶解前驅物耗盡所有溶劑，將增強小前驅物粒子的激增 。見 D.W. Matson ，J.L. Fulton ，R.C. Petersen and R. D. Smith ， 、' Rapid Expansion of Supercritical Fluid Solutions :Solute Formation Powders，Thin Films，and Fibers ， Ind. Eng. Chem. Res.，26，2 2 9 8( 1 987) ; H. Anderson，T. T. Kodas and D. M. Smith ， '、 Vapor Phase Processing ofSupercritical Fluid nucleation of Difficult to Comminute Solids, presented at the AIChE conference, San Francisco, November 25-30, 1984. Such solubility changes are potentially harmful because they can cause precursors to drain from the solution and precipitate or react prematurely, clogging the lines and filters. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The rapid decrease in nozzle pressure and high speed will cause the solution to swell and atomize. When the solute concentration is within the normal solubility range, it is appropriate to operate the atomization system of the present invention near the supercritical state. When the low pressure is injected, the precursor system effectively stays in the solution zone. The term '' effectively in solution must be combined to generate a method when a solution (where the concentration of solute is higher than the strength of a normal solvent) is injected into a low pressure zone. In this case, a sudden pressure drop resulted in a high supersaturation ratio (which is a condition of solute nucleation with regard to shock). If the radical nucleation rapidly depletes all solvents from all dissolved precursors, it will enhance the surge of small precursor particles. See DW Matson, JL Fulton, RC Petersen and RD Smith, 'Rapid Expansion of Supercritical Fluid Solutions: Solute Formation Powders, Thin Films, and Fibers, Ind. Eng. Chem. Res., 26, 2 2 9 8 (1 987 ); H. Anderson, TT Kodas and DM Smith, ', Vapor Phase Processing of

Powders ： Plasma Synthesis and Aerosol Decomposition 〃 ，Powders: Plasma Synthesis and Aerosol Decomposition 〃,

Am. Ceram. Soc. Bull.，68，996(1989) ; C. J Chang and A D 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -25- 492018 A7 B7 五、發明說明ί3 )Am. Ceram. Soc. Bull., 68, 996 (1989); C. J Chang and AD This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -25- 492018 A7 B7 V. Invention Description ί3)

Randolph ， 、' Precipitation of Microsize Organic Particles from Supercritical Fluid 。 AlChE Journal ， 35， (請先閱讀背面之注意事項再填寫本頁) 1876(1989); T. T. Kodas， 、、Generarion of Complex MetalRandolph, 'Precipitation of Microsize Organic Particles from Supercritical Fluid. AlChE Journal, 35, (Please read the notes on the back before filling out this page) 1876 (1989); T. T. Kodas, ,, Generarion of Complex Metal

Oxides by Aerosol Processes : Superconducting CeramicOxides by Aerosol Processes: Superconducting Ceramic

Particles and Films 。Adv. Mater.，6，18 0(1989); E. Matijevic， '、Fine Particles : Science ad Technology ，MRS Bulletin ，14，1 8 ( 1 9 89) ; E. Nlatijevic ， FineParticles and Films. Adv. Mater., 6, 18 0 (1989); E. Matijevic, ', Fine Particles: Science ad Technology, MRS Bulletin, 14, 1 8 (1 9 89); E. Nlatijevic, Fine

Particles Part II · Formation Mechanics and Applications 〃 ，MRS Bulletin ，15，1 6 ( 1 9 9 0) ; R · S . M oh am e d ， D . S · Haverson ， P. G. Debenedetti and R. K. Prud'homme ， vv Solid Formation After Expansion of Supercritical Mixtures ， 〃 in Supercritical Fludes Science and Technology，edited by K.P. Johnston and J.M.L. Penniger ， p. 355， American Chemical Society ， Washington j DC( 1 989) » R.S. Mohamed ? P.G. Debenedetti and R. K. Prud'homme ， 、、 Effect of ProcessParticles Part II · Formation Mechanics and Applications 〃, MRS Bulletin, 15, 16 (19 9 0); R · S. Moh amed, D. S. Haverson, PG Debenedetti and RK Prud'homme, vv Solid Formation After Expansion of Supercritical Mixtures, 〃 in Supercritical Fludes Science and Technology, edited by KP Johnston and JML Penniger, p. 355, American Chemical Society, Washington j DC (1 989) »RS Mohamed? PG Debenedetti and RK Prud'homme,, , Effect of Process

Conditions on Crystals Obtained from Supercritical Mixtures /r ， AIChE J.，35，325 ( 1 989) ; J.W. Tom and P.G. 經濟部智慧財產局員工消費合作社印製Conditions on Crystals Obtained from Supercritical Mixtures / r, AIChE J., 35, 325 (1 989); J.W. Tom and P.G.

Debenedetti ， 、、 Formation Bioerodible PoltmericDebenedetti, Formation Bioerodible Poltmeric

Microspheres and Microparticle by Rapid Expansion of Supercritical Solutions ，Biotechnol. Prog.，7，403(1991) 。粒子係製造薄塗層所不欲的，但在製造粉末中爲有利的 〇 因此加熱霧化器提供更較好的優點，相較於一未加熱 裝置其在專門地高於超臨界溫度下操作於溶劑快速膨脹， -26- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明ί4 ) (請先閱讀背面之注音？事項再填寫本頁) 其中（1 )溫度允許良好控制前驅物-溶劑混合物之霧化 度且（2 )可省略前驅物激變的成核，而仍享有超臨界霧 化之利益。超音速速度可形成馬赫盤其額外有益霧化。力口 ’氣體入釋放霧化材料中有助於引導流動且可以確保所欲之 燃燒混合。 由調整輸入霧化裝置之熱量，該液體溶液可汽化至各 種程度。未輸熱於霧化裝置，較高的超臨界溫度液體之液 體溶液，其係液體在S Τ Ρ下，可以液體流形式存在，係 其淸楚地遠離超臨界條件。此造成拙劣地形成火焰，且可 能地，令人不快地使液體與基質接觸。減少該液體溶液至 在噴嘴的超臨界溫度之溫度差別，造成該液體溶液破成小 滴，而形成薄霧其係自霧化裝置釋放。將此小滴蒸汽化， 且因此變成在一短距離內呈看不見的。當在霧化裝置中達 到超臨界溫度，該液體溶液小滴尺寸減小，且液汽化距離 溶減短。使用此霧化器，此蒸汽液滴徑係使用氣溶膠汽化 測試器而測試且所得到液滴徑係低於1 . 8 // m的儀器測 試限制。 經濟部智慧財產局員工消費合作社印製 再增加熱量輸入將造成在頂端的無霧狀態或完全的汽 化。不受限於理論，此項溶液行爲可歸因於試藥與溶劑的 合倂超臨界性質。前驅物溶液在較低超臨界溫度溶劑中， 其在S T P下爲氣體，其行爲類似，但自頂端（也參考作 、'噴嘴〃或、、電阻器〃）出現之溶液不會形成液體流，即 使未輸入熱量。得到最理想的溶液汽化所須之加熱量’大 部分取決於溶液之熱容量，及溶劑超臨界溫度與環繞於噴 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -27- 492018 Α7 Β7 五、發明說明ί5 ) 嘴之常溫兩者間之差異。 (請先閱讀背面之注意事項再填寫本頁) 宜保持系統壓力及溫度（在汽化之前）高於沸點及溶 液超臨界點。若壓力降到低於該液相曲線或臨界壓力，同 •時發生溫度高於沸點，溶劑汽化將發生在在頂端之前的管 子內。這將遺留下溶質其可累積且阻塞霧化裝置。同樣地 於超臨界區壓力較佳地充分地高在以使該流體更像是液體 。相較於更似氣體之超臨界流體，似液體超臨界流體爲較 佳溶劑，進一步降低溶質阻塞霧化裝置之可能性。若前驅 物對前驅物相互作用高於溶劑與前驅物間之強度，溶劑-前驅物鍵結可斷裂且有效地自溶液除去前驅物。之後前驅 物分子形成串簇而黏於霧化裝置並阻塞電阻器。此問題在 大部分案例中可解決，可將汽化點由頂端之內部轉至頂端 之末端，其係由減少輸入霧化裝置之熱而完成。另一解決 方案係用一溶劑其可與前驅物形成較強的鍵結故可形成較 穩定之溶液。在頂端小量的薄霧通常造成最好品質的薄膜 。若溶液溫度太高或太低，將形成材料的奈米級或微米級 球。若須要厚塗層則這些球係有害的。 經濟部智慧財產局員工消費合作社印製 若達到無薄霧條件，將在上述溫度執行沉積。經火焰 加熱並混合以外部氣體，可保持S Τ Ρ液體溶劑不凝結且 形成小滴。在無薄霧案例中，霧化且內部混合非常良好但 降低了流動穩定性’造成火焰可由一邊跳至另一邊，相對 於頂端方向。以該火焰性能，沉積仍是可能的，但難以沉 積成須要嚴格厚度均勻性者。此外，在釋放之前，必須保 持溶液溫度低於溶質沉澱或反應及沉澱之溫度。當使用溶 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -28- 492018 A7 B7 % V%修Microspheres and Microparticles by Rapid Expansion of Supercritical Solutions, Biotechnol. Prog., 7, 403 (1991). Particle systems are not desirable for making thin coatings, but are advantageous in making powders. Therefore, heating the atomizer provides better advantages, compared to an unheated device that operates at a temperature specifically above the supercritical temperature. Due to the rapid expansion of solvents, -26- This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Description of the invention ί 4) (Please read the note on the back? Matters before filling out this page) Among them, (1) the temperature allows the atomization degree of the precursor-solvent mixture to be well controlled and (2) the nucleation of precursors can be omitted, while still enjoying the benefits of supercritical atomization. Supersonic speeds can form Mach disks for their additional beneficial atomization. Orifice gas into the release atomizing material helps to direct the flow and ensures the desired combustion mix. By adjusting the heat input to the atomizing device, the liquid solution can be vaporized to various degrees. A liquid solution of a liquid with a higher supercritical temperature that is not heat-transferred to the atomizing device. The liquid is in the form of a liquid stream under STP, and it is far away from supercritical conditions. This results in poorly formed flames and, possibly, unpleasantly contacting the liquid with the substrate. Reducing the temperature difference of the liquid solution to the supercritical temperature of the nozzle causes the liquid solution to break into droplets and form a mist which is released from the atomizing device. This droplet is vaporized and therefore becomes invisible over a short distance. When the supercritical temperature is reached in the atomizing device, the droplet size of the liquid solution decreases and the liquid vaporization distance decreases. Using this atomizer, the droplet diameter of this vapor is tested using an aerosol vaporization tester and the resulting droplet diameter is below the instrument test limit of 1.8 m. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Increasing heat input will result in a fog-free state or complete vaporization at the top. Without being bound by theory, this solution behavior can be attributed to the combined supercritical nature of the reagent and the solvent. The precursor solution is in a lower supercritical temperature solvent, it is a gas under STP, and its behavior is similar, but the solution appearing from the top (also referred to as, 'nozzle〃, or, resistor〃) will not form a liquid flow, Even if no heat is input. The amount of heating required to obtain the optimal solution vaporization depends largely on the heat capacity of the solution, and the supercritical temperature of the solvent and the size of the paper surrounding the sprayed paper. Applicable to China National Standard (CNS) A4 (210 X 297 mm) -27 -492018 Α7 Β7 V. Description of the invention ί5) The difference between the normal temperature of the mouth. (Please read the precautions on the back before filling out this page) It is recommended to keep the system pressure and temperature (before vaporization) above the boiling point and the supercritical point of the solution. If the pressure drops below the liquidus curve or critical pressure, and a temperature above the boiling point occurs at the same time, solvent evaporation will occur in the tube before the tip. This will leave solutes that can build up and block the atomizing device. Similarly, the pressure in the supercritical region is preferably sufficiently high to make the fluid more like a liquid. Compared with a more gas-like supercritical fluid, a liquid-like supercritical fluid is a better solvent, which further reduces the possibility that the solute will block the atomizing device. If the precursor-to-precursor interaction is stronger than the solvent-precursor strength, the solvent-precursor bond can break and effectively remove the precursor from the solution. The precursor molecules then form clusters that stick to the atomizing device and block the resistor. This problem can be solved in most cases. The vaporization point can be changed from the inside of the top to the end of the top, which is accomplished by reducing the heat input to the atomizing device. Another solution is to use a solvent which can form a stronger bond with the precursor and thus form a more stable solution. A small amount of mist at the top usually results in the best quality film. If the solution temperature is too high or too low, nano- or micron-sized balls of the material will form. These balls are harmful if a thick coating is required. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs If the mist-free condition is reached, the deposition will be performed at the above temperature. The flame is heated and mixed with an external gas to keep the STP liquid solvent from condensing and forming droplets. In the case of no mist, the atomization and internal mixing are very good but the flow stability is reduced ', causing the flame to jump from one side to the other, relative to the top direction. With this flame performance, deposition is still possible, but it is difficult to deposit to those requiring strict thickness uniformity. In addition, the temperature of the solution must be kept below the temperature at which the solute precipitates or reacts and precipitates before release. When using solvent, the paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -28- 492018 A7 B7% V%

經濟部智慧財產局員工消費合作社印製 五、發明說明（26 ) 劑混合物，可能的在加熱中越過靜止（s p i η 〇 i d a)不互溶之線 。此造成製造二個分離的相，並可能造成兩相中濃度差異 (其係由於溶質不同的溶解度）。此可影響在高霧化溫度 下製造前驅物及產物球。所有這些因素展示其可取處在於 將溶液暴露於熱減縮到最小（若必須）直到頂端以使可能 的不希望的平衡條件狀態無充分時間發生。因此可精確地 控制薄膜沉積之結構。 由於此項控制，可能得到許多薄膜顯微結構。由增加 溶液濃度而可能增加沉積速率，且隨著增加溶液濃度，可 改變下列顯微結構；密集爲多孔，由反射的至晦J霞„韵_，平 滑的至粗糙的，圓柱的至小丘狀的，及薄的至厚的。也可 製造分類的及複合層的塗層。複合層之形成可由供給不同 的前驅物其含有個別火焰溶液。連續的複合沉積火焰可用 於增加生產用途之生產率。其可控制沉積參數的額外因素 包含；可控制表面擴散及成核的基質表面溫度；可控制邊 界層厚度且因此可控制沉積速率之壓力，溶液組成物及混 合氣體將改變沉積材料且因而改變此塗層成長習性，可影 響其中反應發生及蒸汽穩定性之火焰及電漿能量水準，以 及到基質之距離其可影響由霧化至反應到沉積之時間其可 導致粒子形成或對較大串簇增加的擴散時間。此外，電場 及磁場影響某些材料成長習性，或增加沉積效率。一個熟 於此技藝之人士將承認該電場及磁場將影響某些蒸汽沉積 材料之成長習性，及改變特別的沉積速率及效率。 因爲輸入溶液加熱霧化器所須的能量，就不同的前驅 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -29- ------------------丨訂·丨丨丨丨—丨線 (請先閱讀背面之注意事項再填寫本頁) 492018 A7 ____ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明合 ) 物/初級溶劑/第二溶劑溶液將有所不同，宜由具有固定 初級對第二溶劑比例之溶液而沉積複合層薄膜。如此當由 一溶液轉換至另一溶液，不必改變輸入霧化器之能量。此 裝配之簡化可製造較高的性能及可靠度並可降低成本。交 替地，基質可通過火焰，該火焰含有不同的試藥，以建立 所欲之複合層。 當溶液提供燃料以燃燒，取決於材料，濃度可高達 〇· 1克分子而造成稠密塗層。大部分材料具有較佳的濃 度高達0 · 0 1克分子。具有較低擴散及流動性之材料須 要低於0 · 0 0 2之溶液濃度。就大部分材料而言，溶液 濃度低於0 · 0 0 0 1克分子將造成非常慢的沉積速率。 加入可燃材料可使火焰沉積具有較高的濃度，即使超過1 Μ，但就前驅物形成較佳的蒸汽而言，高濃度係不宜的， 除非前驅物具有高蒸汽壓力。低蒸汽壓力前驅物溶液濃度 係以低於0 · 0 0 2克分子爲較佳。 不受限於理論，宜瞭解本發明沉積技術基礎包含發現 CVD不限於在表面反應。見Hunt ， Α.Τ. ’ Combusition Chemical Vapor Deposition ， a Novel Thin Film Deposition technology ， Ph.D. Thesis Georgia Inst, of Tech. Atlanta ，GA.，（ 1 993) ; Hunt ， A.T. ’ 、、Presubstrute Reaction CVD，and a Definition for Vapor” ’ 發表於 13th Int· Conf. on C V D，Los Angles，CA(1996)’其內谷併入本文作爲產 考資料。反應可優勢地發生在氣體流中，但生成的材料其 沉積尺寸必須爲次臨界以獲得具有蒸汽沉積顯微結構之塗 (請先閱讀背面之注意事項再填寫本頁) 獻 -線_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 3〇 _ 492018 A7 _ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明佥 ) 層。這些觀察展示蒸汽係由個別的原子、分子或奈米串簇（ 其可吸附於基質且可立即地擴散至較低能量處或組態）所構 成。因此隨較低基質溫度，最大串簇尺寸必須減小且臨界 核尺寸亦須減小。如一個熟於此技藝之人士所知，在溶劑 汽化之後試藥串簇將留下，且串簇尺寸係相關於試藥蒸汽 壓力，起始液滴徑及溶液濃度。因此，低蒸汽壓力試藥（將 不會在火焰中氣化）在霧化中，必須非常細微形成蒸汽。 較佳的液體溶劑係低成本溶劑其包含，但不限於，乙 醇、甲醇、水、異丙醇及甲苯。水溶液必須送入一預存在 之火焰，當可燃溶劑可本身用於形成火焰。其係較佳，但 不須要，使用溶液形成火焰，而非將溶液送入火焰。較低 試藥濃度可產生如此效果，其可有助於製造次臨界核尺寸 之材料。 一較佳的溶劑及第二溶液液體係丙烷，其在STP下爲 氣體。然而，必須注意·許多其它溶劑系統亦可操作。見， ^[列如 CRC Handbook of Chemistry and Physics ， CRC Press ， Boca Raton ，Florida。丙烷爲較佳的因爲其低成本，其商 場上可獲得性，及其安全性。許多低成本有機金屬可優勢 地使用於丙烷溶液中。爲便於操作處理，起始前驅物可溶 於甲醇、異丙醇、甲苯或其它與丙烷相容之溶劑。之後將 此起始溶液置入其中已加入液體丙烷之容器。在室溫下達 僅高約1 0 0 P S 1之壓力下丙烷爲液體。生成的溶液比 起始溶液具有大幅較低超臨界點，其由降低輸入霧化器所 須的能量而有助於霧化。此外，初級溶劑作用以增加丙烷 (請先閱讀背面之注意事項再填寫本頁) _% _線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -31 - 492018 A7 _ B7 五、發明說明金) (請先閱讀背面之注音2事項再填寫本頁) 之極性溶解度，因此度比由丙院獨自達成者，可允許許多 試藥較高的溶液濃。一般而言，初級溶劑極性應隨溶質（ 前驅物）極性之增加而增加。因此就協助極性溶質之溶解 度而言異丙醇較甲苯爲佳◦在某些案例中初級溶劑作爲介 於此第二溶劑與溶質上配基之間的防護。實例之一爲鈾-乙醯基丙酮化物[Pt(CH3C〇CHC〇CH3)2 ]溶解於丙烷。其中介 於前驅物/初級溶劑與初級溶劑/第二溶劑之重量比可高 於其它系統所須。 經濟部智慧財產局員工消費合作社印製 氨已被考慮並試驗作爲塗層及粉末沉積之第二溶劑。 氨係不貴的溶劑其與某些硝酸鹽基料的前驅物相容，但不 容易與其它第二溶劑使用，且純氨一般侵蝕性造成問題。 未加入前驅物之氨的霧化性質經試驗，且實驗後所用壓力 容器被大幅地侵蝕，即使所使用者爲隋性型- 3 1 6不鏽鋼容 器。對比於碳氫化合物爲基礎的溶劑，氨也使得布納 N(Buna - N)and凡通（Viton)襯墊僅幾分鐘後即無用。即使 用適合的襯墊材料這仍是問題，因爲所欲塗層或粉末通常 必須不含微量的自壓力容器壁濾出之鐵或其它元素。然而 ，可用如E P D Μ彈性體材料。 其它已試驗且可使用之似氣體第二溶劑包含乙烷、乙 烯、乙烷/乙烯混合物、丙烷/乙烯混合物、及丙烷/乙 院混合物。鋁溥膜係由超臨界之混合物乙院與金屬有機鉛 而沉積。 一項有用的溶劑及第二溶液液體爲丙烷，在s Τ Ρ下 爲氣體。然而’必須注意許多其它溶劑系統亦可操作。見 本紙張尺度適用中國國豕標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明;ίο ) ，例如 CRC Handbook of Chemistry and Physics，CRC Press ，Boca Raton，Florida。丙烷爲較佳的因爲其低成本，其 商場上可獲得性，及其安全性。許多低成本有機金屬可優 ’勢地使用於丙烷溶液中。爲便於操作處理，起始前驅物可 溶於曱醇、異丙醇、甲苯或其它與丙烷相容之溶劑。之後 將此起始溶液置入其中已加入液體丙烷之容器。在室溫下 達僅高約1 0 0 P s 1之壓力下丙烷爲液體。生成的溶液 比起始溶液具有大幅較低的超臨界點，其由降低輸入霧化 器所須的能量而有助於霧化。此外，初級溶劑係用以增加 丙烷之極性溶解度，因此比由丙烷獨自達成者，可允許許 多試藥較高的溶液濃度。一般而言，初級溶劑極性應隨溶 質（前驅物）極性之增加而增加。因此就協助極性溶質之 溶解度而言異丙醇較甲苯爲佳。在某些案例中初級溶劑作 爲介於此第二溶劑與溶質上配基之間的防護。實例之一爲 鉛—乙醯基丙酮化物[Pt(CH3C〇CHC〇CH3)2 ]溶解於丙烷。其 中介於前驅物/初級溶劑與初級溶劑/第二溶劑之重量比 可高於其它系統所須。 氨已被考慮並試驗作爲塗層及粉末沉積之第二溶劑。 氨係不貴的溶劑其與某些硝酸鹽基料的前驅物相容，但不 容易與其它第二溶劑使用，且純氨一般侵蝕性造成問題。 未加入前驅物之氨的霧化性質經試驗，且實驗後所用壓力 容器被大幅地侵蝕，即使所使用者爲隋性型- 3 1 6不鏽 鋼容器。對比於碳氫化合物爲基礎的溶劑，氨也使得布納 N(Buna — N)及凡通（VUon)襯墊僅幾分鐘後即無用。即使用 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 請 先 閱 讀 背 面 之 注 意 事 項 再Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (26) The agent mixture may cross the stationary (spi i η 〇 i d a) immiscible line during heating. This results in the creation of two separate phases and may cause a difference in concentration between the two phases (which is due to the different solubility of the solutes). This can affect the production of precursors and product spheres at high atomization temperatures. All of these factors demonstrate the desirability of minimizing, if necessary, the exposure of the solution to heat to the top so that there may not be sufficient time for possible undesired equilibrium conditions to occur. Therefore, the structure of the thin film deposition can be precisely controlled. Due to this control, many thin film microstructures are possible. It is possible to increase the deposition rate by increasing the concentration of the solution, and the following microstructures can be changed as the concentration of the solution is increased; dense and porous, from reflective to opaque, and smooth to rough, cylindrical to hillocks It is thin and thick. It can also produce classified and composite coatings. Composite layers can be formed by supplying different precursors which contain individual flame solutions. Continuous composite deposition flames can be used to increase productivity in production applications Additional factors that can control the deposition parameters include; the surface temperature of the substrate that can control the surface diffusion and nucleation; the pressure that can control the thickness of the boundary layer and therefore the deposition rate; the solution composition and the mixed gas will change the deposition material and therefore change The growth habit of this coating can affect the flame and plasma energy levels of reaction occurrence and steam stability, and the distance from the substrate can affect the time from atomization to reaction to deposition. It can lead to particle formation or large clusters. Increased diffusion time. In addition, electric and magnetic fields affect the growth habit of certain materials, or increase deposition efficiency. Those skilled in the art will recognize that the electric and magnetic fields will affect the growth habits of certain vapor deposition materials, and change the special deposition rate and efficiency. Because the energy required to heat the atomizer by the input solution is different from the precursor paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) -29- ------------------ 丨 Ordering | 丨 丨 丨 丨-丨 Line (please first Read the notes on the back and fill out this page) 492018 A7 ____ B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of invention) The substance / primary solvent / second solvent solution will be different, and should be fixed The solution of the second solvent ratio is used to deposit the composite layer film. In this way, when changing from one solution to another solution, it is not necessary to change the energy input to the atomizer. The simplification of this assembly can produce higher performance and reliability and reduce costs. Alternately, the matrix can pass through a flame, which contains different reagents to build the desired composite layer. When the solution provides fuel for combustion, depending on the material, the concentration can be as high as 0.1 gram molecules resulting in a dense coating. Large Sub-materials have a better concentration of up to 0.1 mol. Materials with lower diffusion and fluidity need to have a solution concentration lower than 0 · 0 0 2. For most materials, the solution concentration is lower than 0 · 0 0 0 1 gram molecule will cause a very slow deposition rate. Adding flammable materials can make flame deposition have a higher concentration, even if it exceeds 1 M, but high concentration is not suitable for precursors to form better steam, unless The precursor has a high vapor pressure. The concentration of the precursor solution with a low vapor pressure is preferably less than 0. 0 2 mol. Without being limited to theory, it should be understood that the basis of the deposition technology of the present invention includes the discovery that CVD is not limited to surface reactions. See Hunt, Α.Τ. 'Combusition Chemical Vapor Deposition, a Novel Thin Film Deposition technology, Ph.D. Thesis Georgia Inst, of Tech. Atlanta, GA., (1 993); Hunt, AT', Presubstrute Reaction "CVD, and a Definition for Vapor" was published on 13th Int · Conf. On CVD, Los Angles, CA (1996). The reaction can take place preferentially in a gas flow, but the deposition size of the resulting material must be subcritical to obtain a coating with a vapor deposition microstructure (please read the precautions on the back before filling this page) The scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) _ 3〇_ 492018 A7 _ B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of invention 佥) These observations show that the steam system consists of individual clusters of atoms, molecules, or nanoclusters that can be adsorbed on the matrix and can immediately diffuse to a lower energy or configuration. Therefore, with lower matrix temperatures, the maximum cluster size must be reduced and the critical nucleus size must also be reduced. As one skilled in the art knows, clusters of reagents will remain after solvent evaporation, and cluster cluster size is related to reagent vapor pressure, initial droplet diameter, and solution concentration. Therefore, the low vapor pressure reagent (which will not be vaporized in the flame) must form very fine vapor during atomization. Preferred liquid solvents are low cost solvents which include, but are not limited to, ethanol, methanol, water, isopropanol and toluene. The aqueous solution must be fed into a pre-existing flame, when a flammable solvent can be used to form the flame itself. This is preferred, but it is not required to use a solution to form a flame instead of sending the solution into a flame. Lower reagent concentrations can produce this effect, which can help make materials of subcritical core size. A preferred solvent and a second solution-liquid system, propane, are gases under STP. However, it must be noted that many other solvent systems can also be operated. See, ^ [Listed as CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, Florida. Propane is preferred because of its low cost, its commercial availability, and its safety. Many low cost organometals can be used with advantage in propane solutions. For ease of handling, the starting precursor is soluble in methanol, isopropanol, toluene, or other solvents compatible with propane. This starting solution was then placed in a container into which liquid propane had been added. Propane is liquid at a pressure of only about 100 P S 1 at room temperature. The resulting solution has a significantly lower supercritical point than the starting solution, which helps atomization by reducing the energy required to enter the atomizer. In addition, the primary solvent acts to increase propane (please read the precautions on the back before filling this page) _% _ Line · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -31-492018 A7 _ B7 V. Invention Description Gold) (Please read the note 2 on the back before filling out this page), the polar solubility, so the degree of concentration is higher than those achieved by the C-house alone, which can allow many reagents to be higher in solution concentration. In general, the polarity of the primary solvent should increase as the polarity of the solute (precursor) increases. Therefore, isopropyl alcohol is better than toluene in terms of assisting the solubility of polar solutes. In some cases, the primary solvent acts as a shield between this second solvent and the ligand on the solute. One example is the dissolution of uranium-acetamidoacetonate [Pt (CH3COCHCOCO3) 2] in propane. The weight ratio of precursor / primary solvent to primary solvent / secondary solvent can be higher than required by other systems. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Ammonia has been considered and tested as a secondary solvent for coatings and powder deposition. Ammonia-based inexpensive solvents are compatible with some nitrate-based precursors, but are not easy to use with other secondary solvents, and pure ammonia is generally corrosive and causes problems. The atomization properties of ammonia without the precursor were tested, and the pressure vessel used after the experiment was greatly eroded, even if the user was an inert type-3 1 6 stainless steel container. Compared to hydrocarbon-based solvents, ammonia also makes Buna-N and Viton pads useless after just a few minutes. This is a problem even with a suitable gasket material, as the desired coating or powder must generally be free of traces of iron or other elements filtered from the pressure vessel wall. However, elastomeric materials such as EPDM can be used. Other tested and usable gas-like second solvents include ethane, ethylene, ethane / ethylene mixtures, propane / ethylene mixtures, and propane / ethyl mixtures. The aluminum hafnium film is deposited from a supercritical mixture of Yiyuan and metal organic lead. One useful solvent and second solution liquid is propane, which is a gas at sTP. However, it must be noted that many other solvent systems can also be operated. See this paper standard applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 B7 V. Description of the invention; ί)), such as CRC Handbook of Chemistry and Physics, CRC Press, Boca Raton, Florida. Propane is preferred because of its low cost, its availability in the mall, and its safety. Many low cost organometals can be advantageously used in propane solutions. To facilitate handling, the starting precursor is soluble in methanol, isopropanol, toluene, or other solvents compatible with propane. This starting solution was then placed in a container into which liquid propane had been added. Propane is liquid at a pressure of only about 100 P s 1 at room temperature. The resulting solution has a significantly lower supercritical point than the starting solution, which helps atomization by reducing the energy required to enter the atomizer. In addition, the primary solvent is used to increase the polar solubility of propane, and therefore allows higher concentrations of many reagents than those achieved by propane alone. In general, the polarity of the primary solvent should increase as the polarity of the solute (precursor) increases. Therefore, isopropyl alcohol is better than toluene in terms of assisting the solubility of polar solutes. In some cases the primary solvent acts as a shield between this second solvent and the ligand on the solute. One example is the dissolution of lead-acetamidoacetonate [Pt (CH3C0CHC0CH3) 2] in propane. The weight ratio between the precursor / primary solvent and the primary solvent / secondary solvent may be higher than required by other systems. Ammonia has been considered and tested as a secondary solvent for coatings and powder deposition. Ammonia-based inexpensive solvents are compatible with some nitrate-based precursors, but are not easy to use with other secondary solvents, and pure ammonia is generally aggressive and causes problems. The atomization properties of ammonia without the precursor were tested, and the pressure vessel used after the experiment was greatly eroded, even if the user was an inert-type stainless steel vessel. Compared to hydrocarbon-based solvents, ammonia also makes Buna N and VUon pads useless after just a few minutes. Even if this paper is used, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) applies. Please read the notes on the back first

頁 經濟部智慧財產局員工消費合作社印製 -33- 492018 Α7 Β7 五、發明說明A ) (請先閱讀背面之注意事項再填寫本頁) 適合的襯墊材料這仍是問題，因爲所欲塗層或粉末通常必 須不含微量的自壓力容器壁濾出之鐵或其它元素。然而， 可用如E P D Μ彈性體材料。 ’其它試驗的溶劑與溶劑混合物造成類似的品質，但其 操作更爲複雜因爲其沸點大幅較低，須要冷卻溶液或非常 高的壓力。易於處理使丙烷成爲較佳的溶劑，但當丙烷不 能使用時，如當前驅物不可溶於丙烷時，其它超臨界溶劑 被考慮作爲丙烷之替代品。若須要，其它液體可用於更降 低超臨界溫度。 經濟部智慧財產局員工消費合作社印製 一項加熱方法係在噴嘴端之間施以電流，其中將前驅 物溶液射入低壓力區，及約束管後面。由於其短的反應時 間’此直接加熱約束管方法允許快速改變霧化。大部分強 烈加熱位置可移到頂端，由增加介於頂端與連於頂端之電 線間的連接電阻。薄壁的約束管比厚壁的管具有較大的電 阻，且可減少響應時間。可使用其它加熱方法且有些已被 硏究。包括但不限於遙控電阻加熱、前導火焰加熱、感應 加熱及雷射加熱。一個熟於此技藝之人士可立即地決定其 它適合的加熱方法以調節在霧化器出口站之溫度。 遙控電阻加熱使用非導電性約束管，其係位於內部電 熱管。此非導電性管將緊密地配入導電性管。將電流通至 導電型管以加熱此管且能量係轉換至內部非導電性約束管 。相較於直接加熱約束管方法，此方法須要較大的加熱電 流且展示較長的響應時間，在某些條件下其係有利的’因 爲所增加之響應時間造成高度之熱穩定性。另方面’前導 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -34- 492018 A7 B7 五、發明說明佥 ) 火焰及雷射加熱各自地使用 以加熱此約束管。此可在一 束管頂端係承受前導火焰或 中將較大的外管加熱。因爲 大，加熱管，比在直接電氣 ，較佳地，將具有較厚的壁 光可允許使用薄壁約束管。 參照圖2及3 ，展示了 之沉積裝置200。裝置2 速度啷筒1 ，其自溶液容器 爲 > 前驅物溶液〃）而注入 "或、、蒸汽器〃 ）4。圖3 氣化器4。前驅物溶液2係 經線5及濾器6而進入霧化 入固定或可變式溫度控制電 成，包括但不限於’電阻電 、或火焰加熱。就電阻電氣 。電氣連接8至電阻器7宜 。在由D C電源加熱之案例 負極。另一*其它桿9可接於 1〇之內部或外部。就特殊 全霧化器尺寸是有利的’宜 後面，或連接外罩1 0內部 展示線上配置，但可置於任 前導火焰能量或雷射光能量， 直接加熱裝配中完成，其中約 雷射光或在間接加熱組態，其 傳送入溶液之能量之須要量很 加熱或遙控電氣加熱之案例中 。將外管施以前導火焰或雷射 請 先 閱 讀 背 面 之 注 意 事 項 再Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs-33- 492018 Α7 Β7 V. Description of Invention A) (Please read the precautions on the back before filling this page) Suitable gasket material This is still a problem, because the coating The layer or powder must generally be free of trace amounts of iron or other elements filtered from the pressure vessel wall. However, elastomeric materials such as EPDM can be used. ’Solvents and solvent mixtures of other tests resulted in similar qualities, but their operation was more complicated because their boiling points were significantly lower and required cooling of the solution or very high pressures. Ease of handling makes propane a preferred solvent, but when propane is unusable, such as when the current precursor is insoluble in propane, other supercritical solvents are considered as alternatives to propane. If required, other liquids can be used to lower the supercritical temperature. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A heating method is to apply an electric current between the nozzle ends, in which the precursor solution is injected into the low pressure area and behind the restraint tube. Due to its short reaction time ' this direct heating confinement tube method allows rapid changes in atomization. Most of the strong heating positions can be moved to the top by increasing the connection resistance between the top and the wires connected to the top. Thin-walled constrained tubes have greater resistance than thick-walled tubes and can reduce response time. Other heating methods can be used and some have been investigated. Including but not limited to remote resistance heating, pilot flame heating, induction heating and laser heating. A person skilled in the art can immediately determine other suitable heating methods to adjust the temperature at the nebulizer exit station. The remote resistance heating uses a non-conductive confinement tube, which is located inside the electric heating tube. This non-conductive tube will fit tightly into the conductive tube. A current is passed to a conductive tube to heat the tube and the energy system is converted to an internal non-conductive confinement tube. Compared with the direct heating confinement tube method, this method requires a larger heating current and exhibits a longer response time, which is advantageous under certain conditions because the increased response time results in high thermal stability. On the other side, the “leader” of this paper applies Chinese National Standard (CNS) A4 (210 X 297 mm) -34- 492018 A7 B7 V. Description of the Invention 佥) Flame and laser heating are used separately to heat the confinement tube. This can withstand the pilot flame at the top of a tube or heat a larger outer tube. Because the heating tube is larger than the direct one, it will preferably have a thicker wall of light and allow the use of thin walled constrained tubes. 2 and 3, a deposition apparatus 200 is shown. Device 2 speed drum 1, which is injected from the solution container > precursor solution 〃) " or, steamer）) 4. Figure 3 Gasifier 4. The precursor solution 2 is atomized through the wires 5 and the filter 6 into a fixed or variable temperature control circuit, including but not limited to 'resistance circuit' or flame heating. On resistance electrical. Electrical connection 8 to resistor 7 should be used. In the case of heating by DC power source negative. The other * other rod 9 can be connected to the inside or outside of the 10. The size of the special full atomizer is advantageous. It should be configured at the rear, or connected to the inside of the outer cover 10, but it can be placed in any leading flame energy or laser light energy, which can be directly heated and assembled. In the case of indirect heating configuration, the amount of energy transferred into the solution is very high or in the case of remote electric heating. Apply the outer tube to a pilot flame or laser. Please read the notes on the back first.

頁 經濟部智慧財產局員工消費合作社印製 就薄膜 〇0其 3抽取 霧化器 爲*** 自前驅 器4。 阻器7 氣加熱 加熱， 置於非 中，此 沿電阻 用途如 連接於 。氣體 何其它 及粉末 組成包 試藥運 中（也 圖其展 物溶液 之後將 。力口熱 、雷射 可使用 常接近 連接8 器7任 管內部 電阻器 連接在 配置而 使用超 括一固 送溶液 參考作 示更詳 容器3 前驅物 可由許 加熱、 A C或 電阻器 或桿可 何其它 塗層， 7其在 外罩1 不會干 臨界霧化 定或可變 2 (也稱 ”噴霧器 細的圖示 中抽取， 溶液2抽 多方法完 感應加熱 D C電流 7之頂端 爲正極或 點，外罩 其中小的 外罩1 0 〇後面係 擾此裝置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -35- 492018 A7 B7 五、發明說明:) 2〇〇之功能。 在大部分案例中薄的氣體A供應線爲1 1 ， 請 先 閱 讀 背 之 注 意 事 項 再 1« 頁 1/16〃 I D，載運可燃氣體混合至小的出口 χ 2 (其 ’中它可作爲一穩定前導火焰），較佳地在電阻器7的 2 · 5 c m之內，以燃燒經由電阻器7供應之前驅物溶液 。氣體A之供應係由流動控制器1 3加以監控，控制個別 氣體A混合成分1 4及1 5之流動。氣體A燃料成分1 4 經混合以氧化成分1 5，其係在混合'' T 〃 1 6中混合， 接近霧化器4或在霧化器4內部。此後混合係有利於安全 性考量，因爲其可降低可能的回沖。外罩1 0內部之分配 管道連接氣體供應線1 1至氣體A進料1 7。氣體B供應 線1 8係用於由供應1 9運送氣體B，以完成良好的混合 以使霧化溶液可噴霧。在大部分案例中使用高速度氣體流 。許多氣體B供應孔眼2 0 (大部分案例中有6個，多或 經濟部智慧財產局員工消費合作社印製 少的孔眼可取決於特別的用途而使用）置於環繞電阻器7 而供應氣體B使得到所欲流動模式。氣體B流之流動性質 由下列因素影響如：在氣體B貯存容器2 1中之氣體B壓 力，流動速率如由流動控制器1 3所決定者，管線直徑5 ，及供應孔眼2 0之數目。供選擇地，氣體B可送入經一 較大管同軸於且環繞電阻器7。一旦前驅物溶液2被抽取 到前驅物供應2 2其溫度係經電阻器7由電流控制（在電 氣加熱之案例中），如由電源供應2 3決定。之後可調整 此加熱電流使發生適當量的霧化（氣化，汽化）。之後穩 定前導火焰可點燃霧化反應性噴霧且在基質2 4上沉積粉 -36- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明心) 末或薄膜。 請 先 閱 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 許多不同的塗層已使用在此敘述之方法及裝置作沉積 。當丙烷使用在大部分案例中作爲超臨界第二溶劑（即小 ‘量高前驅物濃度的初級溶劑混合以大量的第二溶劑），其 它溶劑已被使用。其它可能的第二溶劑包含，但不限於 N 2〇、乙烯、乙烷、及氨。 一個熟於此技藝之人士將承認幾乎任何基質上可由本 發明方法及裝置作塗佈。一基質若可承受在此方法中溫度 及生成的熱氣之條件，即可作塗佈。基質可使用冷卻方法 (在此敘述於它處）加以冷卻，如噴水，但在低的基質表 面溫度，在此的稠密或結晶狀塗層因爲其低擴散速率而不 可能的。此外，基質在熱氣中之穩定性可更說明由使用低 溫，低壓力火焰，以及須用或不用額外的基質冷卻。 經濟部智慧財產局員工消費合作社印製 種種化學前驅物已被建議用於C C V D薄膜及粉末之 沉積，且額外的化學前驅物在此被建議。在提供金屬或準 金屬元素之外，也須要任何化學前驅物C C V D其可溶於 適合的載體溶劑，大部分須要可溶於丙烷。此外，若前驅 物溶液係包含前驅物多於一種金屬及/或準金屬，化學前 驅物必須相互可溶於適合的載體溶劑且相互間化學上相容 。若前驅物不是高度可溶於初級溶劑，如丙烷，可起先溶 第 接 於一項第二溶劑 溶劑中之溶液，假設當該溶液加入初級溶劑時化學前驅物 不沉澱。此外，化學前驅物之選擇須加入成本考量。 若使用化學前驅物之混合物作特別的組成物的層狀或 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -37- 492018 A7 一 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明紅 ) 粉末之沉積，宜使該前驅物混合成均質的、、預溶液〃而不 須加入任何額外的溶劑。若否，宜使所有化學前驅物相互 可溶於共同溶劑，作爲、、預溶液〃，愈少溶劑愈佳。這些 欲性質，當然’可促進運送及處理，特別當所用之初級 溶劑爲丙烷或另一其在室溫下爲氣體之材料。雖然將要提 供預溶液〃，亦可接受化學前驅物爲互相可溶於沉積溶 液其中使用一或更多溶劑，且可將該溶液製備及販賣，或 現場製備爲沉積溶液。 就沉積而言’在載體溶劑中前驅物化合物之總濃度通 常在約0 · 0 0 1至約2 · 5 w t %，較佳地在約 〇.05 至約 1 . Owt%。 就大部分C C V D沉積而言，宜將前驅物溶於有機溶 劑。然而，就本發明中電氣抵抗材料而言，宜將碳與抵抗 材料共丨几積。某些材料，例如鎳，對碳具有高親和力。因 此，該材料之前驅物可較佳地溶於水性及/或氨溶液，在 此案例中，水性及/或氨及/或N 2〇溶液將吸入氫/氧火 焰以作C C V D。 C C V D優點之一，當以較佳的霧化裝置執行時，相 對於其它沉積方法，在含有一或更多溶解化學前驅物之前 驅物溶液經霧化成近於超臨界液體，或在某些案例中，霧 化成超臨界液體。因此，前驅物之量或將燃燒且沉積於基 質或以粉末形式沉積的前驅物之量，取決於個別化學前驅 物及載體溶劑或溶劑之相對蒸汽壓力。此對比於傳統 C V D方法其中必須就提供各個汽化的化學前驅物提供個 (請先閱讀背面之注意事項再填寫本頁) - •線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -38- 492018 Α7 ____Β7 五、發明說明έ6 ) (請先閱讀背面之注意事項再填寫本頁) 別供應線，通常在載運氣體中，以供應C V D爐子。同時 某些傳統的C V D前驅物係不均衡的，使難以均勻地供應 該化學前驅物一可由C C V D技術立即地對付的另一項問 .題。 控制氣壓燃燒化學蒸汽沉積（C A C C V D )裝置說 明於圖7及8。將塗層前驅物7 1 0經混合以液體介質 7 1 2，在一形成區7 1 4中，包含混合或保持槽7 1 6 。將前驅物7 1 0與液體介質7 1 2形成流動液流其係由 啷筒7 1 8加壓.，由過濾器7 2 0過濾並經導管7 2 2送 入霧化區7 2 4，自其中連續地流經反應區7 2 6 ，沉積 區7 2 8及障礙區7 3 0。假設塗層前驅物充分地細微分 散在該液體介質中，不須由混合塗層前驅物7 1 0與該液 體介質7 1 2形成真溶液。然而，形成溶液係較佳的，因 爲通常如此可製造更均質的塗層。 經濟部智慧財產局員工消費合作社印製 當通入霧化區7 2 4此流動液流將霧化。霧化之完成 可使用認可的霧化流動液體流之技術。在此說明裝置中’ 霧化之執行係由排出高速度霧化氣體流其環繞且直接相接 於流動液流，當此流動液流自導管7 2 2排出。霧化氣體 流係由氣體瓶或其它高壓力氣體源提供。在此說明體系中 ，高壓氫（Η 2 )係用作霧化氣體且作爲燃料◦將霧化氣體 自氫氣瓶7 3 2送入，經調節閥7 3 4，流量計7 3 6並 進入導管738。導管738與導管722共中心而延伸 至霧化區其中兩者導管末端允許高速氫霧化氣體接觸流動 液體流，從而使其霧化成細微粒子流懸浮於周圍氣體/蒸 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 39 _ 492018 A7 ________ B7 五、發明說明i7 ) 汽。此液流流入反應區7 2 6而在其中使該液體介質汽化 且塗層前驅物反應而形成反應的塗層前驅物，其時常包含 塗層前驅物解離成其成分之離子且造成離粒子之流動液流 或電漿。將此流動液流/電漿通入沉積區7 2 8在其中反 應的塗層則驅物接觸基質7 4 0而在其上沉積爲塗層。 此流動液流之霧化可由直接射出霧化氣體流到液體介 質/塗層前驅物液流（當其離開導管7 2 2 )。供選擇地 ’霧化之完成可將超音波或類似的能量引入該液體流中（ 當其離開導管7 2 2 )。 經濟部智慧財產局員工消費合作社印製 該液體介質之汽化與塗層前驅物之反應基本上須要將 能量輸入流動液流中，在其離開反應區之前。此能量輸入 之發生可以是當其通過導管7 2 2 ，或在霧化及/或反應 區中。此能量輸入可由種種已知加熱技術完成，如電阻加 熱、微波或R F加熱，電氣感應加熱，白熾加熱，將流動 液流混合以速方加熱液體或氣體，光子加熱如雷射等。在 說明的較佳體系中，此能量輸入之完成係由燃料之燃燒， 以及當流動液流經反應區時與氧化劑直接接觸。此相對新 的技術，參考作燃燒化學蒸汽沉積（C C V D )，係更完 全地敘述於U.S. Patent No. 5,652,02 1。在此說體系中，燃 料氫係由氫氣瓶7 3 2，經調節閥，流量計7 4 2送入導 管7 4 4。氧化劑氧，係由氧氣瓶7 4 6，經調節閥 748及流量計7 5〇送入導管7 5 2。導管7 5 2延伸 且與導管7 44同心，其延伸且與導管7 2 2及7 3 8同 心。於離開其相對導管時，氫及氧燃燒而產生燃燒產物其 -40- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明（38 ) 與霧化液體介質及塗層前驅物在反應區中7 2 6中混合， 從而加熱並造成該液體介質之汽化與塗層前驅物之反應。 (請先閱讀背面之注意事項再填寫本頁} 至少起始部分反應區提供的某些流動J育性氣體，自存 在於反應區近旁裝置中之材料隔絕了反應性氣體。」育性氣 體如氬，自惰性氣瓶7 5 4，經調節閥7 5 6及流量計 758送入導管760。導管760延伸及與導管752 同心。導管760延伸出其它導管722，738， 7 4 4及7 5 2之末端，延伸接近於基質，其中它與基質 7 4 0作用而定義出沉積區7 2 8，其中塗層7 6 2係沉 積在基質之上，其形狀通常爲導管7 6 0之截面。當惰性 V… 1 r ——-丨-------------------- 氣體流過氧導管7 5 2之末端，起先形成液流其延伸至反 應區，在其中防護反應性成分不使接觸導管7 6 0。當其 流入導管7 6 0，惰性氣_體與反應區中氣體/電漿混合且 ，，一 _ 11.1 _ 變成流動液流之一部分而導入沉積區7 2 8。 經濟部智慧財產局員工消費合作社印製 起始點火氫及氧時須要點火源。分離的手控點火或點 火裝置係充分適用於許多用途，然而使用時可能須要臨時 的減少j宣..煙氣體流動直到建立穩定火焰正面。在某些用途 中，氣體總流量可非常大以建立獨立的穩定火焰正面。在 此案例中，必須提供點火裝置其可連續地或半連續地點燃 可燃氣，當它們進入反應區。前導火焰或火花製作裝置係 不範的點火來源。 在沉積區7 2 8，反應的塗層前驅物將塗層7 6 2沉 積在基質7 4 0之上。剩下的流動液流自沉積區經障礙區 7 3 0流過而排放入周遭大氣中。障礙區7 3 0作用在防 -41 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 492018 A7 _ B7 五、發明說明纟9 ) 止沉積區被周遭大氣成分所污染。當流動液流通經障礙區 7 3 〇時此區特色在其高速度之流動液流。當其通經障礙 區’須要流動液流達到至少每分鐘五十英尺之速度’在大 •部分塗層用途中，由大氣中成分污染沉積區之可能性基本 上已消除。在更高污染敏感之塗層操作中，如生產T i N 或W C，，當其通經障礙區，須要流動液流達到至少每分 鐘一百英尺之速度，由大氣中成分污染沉積區之可能性基 本上已消除。 在圖7之體系中，項圈7 6 4接於導管7 6 0之末端 ，且由導管7 6 0之末端垂直地延伸而鄰近於沉積區 728。障礙區730係定義介於項圈764與基質 7 4 0之間。此項圏係成形以提供順應表面7 6 6展開接 近基質之表面，其中由相對小的間隙提供沉積區排氣通入 周遭大氣。所建立之間隙介於項圈順應表面7 6 4且基質 之間係充分地小而排氣須達到障礙區中所須速度其至少部 分通過項圏與基質之間。在此末端，項圈7 6 2之順應表 面7 6 4係成形以使本質上平行於基質7 4 0表面。當基 質7 4 0表面係本質上平的，當其在此說體系中，基質順 應表面基本上也是平的。 邊界效應，如高溫及剩餘的反應性成分，其發生鄰近 於導管7 6 0之末端，可延伸沉積區越過基質區而直接在 導管7 6 0之末端之前。項圈7 6 4應向外延伸出其對導 管7 6 0之接合點一充分的距離，以排除周遭氣體向後混 合入沉積區（由於可能的凡圖瑞（Venturi)效應），並確保沉 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -42- (請先閱讀背面之注意事項再填寫本頁) 訂_· --線- 492018 A7 B7 五、發明說明4〇 ) (請先閱讀背面之注意事項再填寫本頁) 積區全區（當其由先前指出的邊界效應延伸），經保護而勿 使周遭氣由高速度排氣向後流動而掃經此介於項圈與基質 之間之區域◦此延伸項圈保證防止遍佈延伸沉積區之污染 。項圈直徑應至少爲導管7 6 0內徑之兩倍，且較佳地， 應至少導管7 6 0內徑五倍。導管7 6 0內徑典型地在 1 ◦至3 0公釐之範圍，且較佳地係介於1 2與2 0公釐 〇 在操作上，項圈7 6 4基本上係平行於塗佈基質表面 7 4 0，且距離上在1公分或更少。較佳地，項圈面向之 表面與基質間係介於2與5公釐遠。調節間隔裝置，如三 個固定或可調式腿（未展示），可提供在項圈之上以協助 保持適當距離介於項圈與基質之間。 經濟部智慧財產局員工消費合作社印製 圖7說明體系係特別有利於塗敷塗層至太大之基質， 或不便於在特別控制環境下如真空室或淸潔室中處理者。 此說明塗層技術係有利地因爲其可在在大氣壓條件下完成 ，且更方便”在戶外”位置。一系列同中心的導管7 2 2 、738、744、752及760形成塗層頭768其 可由相對的小的有彈性的管供應且可充分地小而便於攜帶 ◦大的基質塗佈可由其帶有塗層頭反覆地越過基質光柵或 類似的圖樣，或由越過基質以一列塗層頭其排列以累積地 提供均勻的塗層，或由光柵一列塗層頭。此外爲便於薄膜 塗佈先前太大而不便作塗佈之物件，此技術允許塗層較大 的單元其基質先前係在真空條件下作者。可由塗佈這些基 質較大的單元而達成製造經濟’尤其是當大量生產基質時 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_犯 492018Page Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs on the thin film 〇0 3 extraction atomizer is inserted from the front drive 4. The resistor 7 is heated by gas, and placed in the neutral state. This edge resistor is used to connect to. The gas and other materials and powders are included in the test drug shipment (also shown after the solution of the exhibits will be. Likou heat, laser can be used often close to the connection 8 tube 7 internal tube resistors are connected in the configuration and use a super package The solution reference is shown in more detail. Container 3 The precursor can be heated, AC or resistor or rod or other coatings. 7 It will not dry on the outer cover. Critical atomization will be fixed or variable. 2 Extraction is shown in the illustration. The solution 2 is pumped in multiple ways. The top end of the induction heating DC current 7 is the positive electrode or the point. The small outer cover of the outer cover 1 0 〇 the back disturbs the device. 297 mm) -35- 492018 A7 B7 V. Description of the invention :) The function of 2000. In most cases, the thin gas A supply line is 1 1, please read the precautions on the back before 1 «page 1 16〃 ID, carrying a combustible gas mixed to a small outlet χ 2 (wherein it can serve as a stable leading flame), preferably within 2 · 5 cm of the resistor 7 to burn before being supplied via the resistor 7 Flooding solution The supply of gas A is monitored by the flow controller 13 to control the flow of individual gas A mixed components 14 and 15. The gas A fuel component 14 is mixed to oxidize the component 15 and it is mixed in the mixture. T 〃 16 is mixed in, close to or inside the atomizer 4. After this, mixing is beneficial for safety considerations because it can reduce possible backlash. The distribution pipe inside the outer cover 10 is connected to the gas supply line 1 1 Feed 17 to Gas A. Gas B Supply Line 18 is used to transport Gas B from Supply 19 to complete a good mix to make the atomized solution sprayable. In most cases a high velocity gas stream is used. Many Gas B supply eyelet 20 (6 in most cases, more or less printed by the Intellectual Property Bureau employee ’s consumer cooperative in the Ministry of Economic Affairs may be used depending on the special purpose) placed around the resistor 7 while gas B is supplied so that To the desired flow mode. The flow characteristics of the gas B flow are affected by the following factors such as: the pressure of the gas B in the gas B storage container 21, the flow rate as determined by the flow controller 13, the pipeline diameter 5 and the supply Number of eyelets 2 0. Alternatively, the gas B can be fed coaxially around the resistor 7 via a larger tube. Once the precursor solution 2 is drawn to the precursor supply 2 2 its temperature is controlled by the current via the resistor 7 (in the case of electrical heating) Middle), as determined by the power supply 2 3. After that, the heating current can be adjusted so that an appropriate amount of atomization (gasification, vaporization) occurs. After that, the leading flame can be stabilized to ignite the atomizing reactive spray and deposit powder on the substrate 24 -36- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 492018 A7 _ B7 V. Inventive Note) or film. Please read the notes on the back before completing this page. Many different coatings have been deposited using the methods and apparatus described here. When propane is used in most cases as a supercritical second solvent (ie, a small amount of primary solvent with high precursor concentration is mixed with a large amount of second solvent), other solvents have been used. Other possible second solvents include, but are not limited to, N20, ethylene, ethane, and ammonia. One skilled in the art will recognize that almost any substrate can be coated by the method and apparatus of the present invention. A substrate can be coated if it can withstand the conditions of temperature and heat generated in this method. The substrate can be cooled using a cooling method (described elsewhere herein), such as water spray, but at low substrate surface temperatures, dense or crystalline coatings here are not possible due to its low diffusion rate. In addition, the stability of the substrate in hot gas can be further explained by the use of low temperature, low pressure flames, and the need to cool with or without additional substrates. Various chemical precursors printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs have been suggested for the deposition of CCVD films and powders, and additional chemical precursors are suggested here. In addition to providing metal or metalloid elements, any chemical precursor C C V D is also required which is soluble in a suitable carrier solvent, most of which need to be soluble in propane. In addition, if the precursor solution contains more than one metal and / or metalloid, the chemical precursors must be mutually soluble in a suitable carrier solvent and chemically compatible with each other. If the precursor is not highly soluble in a primary solvent, such as propane, it can be dissolved first in a second solvent. It is assumed that the chemical precursor does not precipitate when the solution is added to the primary solvent. In addition, the choice of chemical precursors must take into account cost considerations. If a mixture of chemical precursors is used as a special composition layer or the paper size is subject to Chinese National Standard (CNS) A4 (210 X 297 mm) -37- 492018 A7-B7 Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printing 5. Description of the invention Red) The deposition of powder, the precursor should be mixed into a homogeneous, pre-solution, without adding any additional solvent. If not, it is advisable to make all chemical precursors mutually soluble in a common solvent. As a pre-solution, the less solvent the better. These desirable properties, of course, 'can facilitate shipping and handling, especially when the primary solvent used is propane or another material that is gaseous at room temperature. Although a pre-solution will be provided, it is also acceptable that the chemical precursors are mutually soluble in the deposition solution using one or more solvents, and the solution may be prepared and sold, or prepared on-site as a deposition solution. In terms of deposition, the total concentration of the precursor compound in the carrier solvent is generally from about 0.0001 to about 2.5 wt%, preferably from about 0.05 to about 1.0 wt%. For most C C V D deposition, the precursor should be dissolved in an organic solvent. However, as far as the electrical resistance material in the present invention is concerned, it is desirable to add carbon and the resistance material together. Certain materials, such as nickel, have a high affinity for carbon. Therefore, the precursor of the material is preferably soluble in an aqueous and / or ammonia solution. In this case, the aqueous and / or ammonia and / or N 2O solution will inhale the hydrogen / oxygen flame for C C V D. One of the advantages of CCVD, when performed with a better atomization device, compared to other deposition methods, the precursor solution is atomized into a near supercritical liquid before containing one or more dissolved chemical precursors, or in some cases Medium, atomized into a supercritical liquid. Therefore, the amount of precursor or the amount of precursor that will burn and be deposited on the substrate or deposited in powder form depends on the relative vapor pressure of the individual chemical precursor and the carrier solvent or solvent. This is in contrast to the traditional CVD method, which must provide one for each vaporized chemical precursor (please read the precautions on the back before filling out this page)-• Line · This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) -38- 492018 Α7 ____ Β7 V. Description of Invention 6) (Please read the notes on the back before filling this page) Do not supply line, usually in the carrier gas, to supply the CVD furnace. At the same time, some traditional CVD precursors are not balanced, making it difficult to supply the chemical precursors uniformly. Another problem that can be dealt with immediately by CCVD technology. A controlled-pressure combustion chemical vapor deposition (C A C C V D) device is illustrated in FIGS. 7 and 8. The coating precursor 7 1 0 is mixed with a liquid medium 7 1 2, and a forming area 7 1 4 includes a mixing or holding tank 7 1 6. The precursor 7 1 0 and the liquid medium 7 1 2 form a flowing liquid stream, which is pressurized by the drum 7 1 8. It is filtered by the filter 7 2 0 and sent to the atomizing zone 7 2 4 through the duct 7 2 2. It flows continuously through the reaction zone 7 2 6, the deposition zone 7 2 8 and the obstacle zone 7 3 0. Assuming that the coating precursor is sufficiently finely dispersed in the liquid medium, it is not necessary to form a true solution by mixing the coating precursor 7 1 0 and the liquid medium 7 1 2. However, forming a solution is preferred because it is generally possible to make a more homogeneous coating. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. When entering the atomizing zone 7 2 4 this flowing liquid stream will be atomized. Atomization can be accomplished using approved techniques for atomizing flowing liquid streams. In this description device, the atomization is performed by discharging a high-speed atomizing gas stream which is directly connected to the flowing liquid stream, and when the flowing liquid stream is discharged from the duct 7 2 2. The atomizing gas flow is provided by a gas bottle or other high pressure gas source. In this description system, high-pressure hydrogen (2) is used as the atomizing gas and as fuel. The atomizing gas is sent from the hydrogen cylinder 7 3 2, through the regulating valve 7 3 4, the flow meter 7 3 6 and enters the conduit. 738. The duct 738 and the duct 722 are co-centered and extend to the atomization area. The ends of the two ducts allow high-speed hydrogen atomized gas to contact the flowing liquid stream, so that it is atomized into a stream of fine particles suspended in the surrounding gas. (CNS) A4 specifications (210 X 297 mm) _ 39 _ 492018 A7 ________ B7 V. Description of the invention i7) Steam. This liquid flow flows into the reaction zone 7 2 6 where the liquid medium is vaporized and the coating precursor reacts to form a reactive coating precursor, which often includes the coating precursor dissociating into ions of its constituents and causing ionization. Flowing fluid or plasma. This flowing liquid stream / plasma is passed into the deposition zone 7 2 8 where the reactive coating contacts the substrate 7 4 0 and deposits as a coating thereon. The atomization of this flowing liquid stream can be directed from the atomizing gas stream to the liquid medium / coating precursor liquid stream (when it leaves the conduit 7 2 2). Alternatively, the completion of the atomization can introduce ultrasound or similar energy into the liquid stream (when it leaves the conduit 7 2 2). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The vaporization of the liquid medium and the reaction of the coating precursors basically require energy to be input into the flowing liquid stream before it leaves the reaction zone. This energy input can occur as it passes through the catheter 7 2 2 or in the atomization and / or reaction zone. This energy input can be accomplished by a variety of known heating techniques, such as resistance heating, microwave or RF heating, electrical induction heating, incandescent heating, mixing flowing liquid flows to heat liquids or gases at a fast speed, and photon heating such as lasers. In the illustrated preferred system, this energy input is accomplished by the combustion of the fuel and by direct contact with the oxidant as the flowing fluid flows through the reaction zone. This relatively new technology, referred to as Combustion Chemical Vapor Deposition (C C V D), is more fully described in U.S. Patent No. 5,652,02 1. In this system, the fuel hydrogen is sent from the hydrogen cylinder 7 3 2 to the guide pipe 7 4 4 through the regulating valve and the flow meter 7 4 2. The oxidant oxygen is sent from the oxygen cylinder 7 4 6 to the conduit 7 5 2 through the regulating valve 748 and the flow meter 7 50. The catheter 7 5 2 extends and is concentric with the catheter 7 44 and it extends and is concentric with the catheters 7 2 2 and 7 3 8. When leaving its opposite duct, hydrogen and oxygen burn to produce combustion products. -40- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Description of the invention (38) and fog The vaporized liquid medium and the coating precursor are mixed in the reaction zone 7 2 6, thereby heating and causing the vaporization of the liquid medium to react with the coating precursor. (Please read the precautions on the back before filling out this page} At least some of the flowing J-fertility gas provided in the reaction zone at the beginning, the reactive gas is isolated from the material existing in the device near the reaction zone. "Fertility gas such as Argon from the inert gas cylinder 7 5 4 through the regulating valve 7 5 6 and the flow meter 758 into the conduit 760. The conduit 760 extends and is concentric with the conduit 752. The conduit 760 extends out of the other conduits 722, 738, 7 4 4 and 7 5 The end of 2 extends close to the substrate, where it interacts with the substrate 7 4 0 to define a deposition area 7 2 8. The coating 7 6 2 is deposited on the substrate, and its shape is usually the cross section of the duct 7 6 0. When the inert V… 1 r ——- 丨 -------------------- gas flows through the end of the oxygen conduit 7 5 2, a liquid flow is initially formed and extends to the reaction zone In it, the reactive components are prevented from contacting the duct 7 6 0. When it flows into the duct 7 6 0, the inert gas _ is mixed with the gas / plasma in the reaction zone and, _ 11.1 _ becomes part of the flowing liquid stream and Introduced into the sedimentary area 7 2 8. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs needs an ignition source when printing the initial ignition hydrogen and oxygen. The isolated manual ignition or ignition device is fully suitable for many uses, however, it may be necessary to temporarily reduce the amount of smoke during use until the stable flame front is established. In some applications, the total gas flow can be very large to establish Independent stabilized flame front. In this case, an ignition device must be provided which can ignite the combustible gas continuously or semi-continuously as they enter the reaction zone. The pilot flame or spark making device is an unusual ignition source. In the deposition zone 7 28. The reactive coating precursor deposits the coating 7 6 2 on the substrate 7 4 0. The remaining flowing liquid flows from the deposition area through the obstacle area 7 3 0 and is discharged into the surrounding atmosphere. The obstacle area 7 3 0 Acting on anti-41-This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 492018 A7 _ B7 V. Description of Invention 纟 9) The sedimentary area is polluted by the surrounding atmospheric components. When the flowing fluid flows through the obstacle zone 730, this zone is characterized by its high velocity flowing fluid flow. When passing through an obstacle zone, ‘it requires a flow of fluid at a speed of at least fifty feet per minute’. In most coating applications, the possibility of contaminating the deposition zone with atmospheric constituents has been largely eliminated. In higher pollution-sensitive coating operations, such as the production of T i N or WC, when passing through obstacles, it is necessary that the flowing liquid flow reaches a speed of at least one hundred feet per minute, and the deposition area may be polluted by atmospheric constituents. Sex has basically been eliminated. In the system of FIG. 7, the collar 746 is connected to the end of the duct 760 and extends vertically from the end of the duct 760 adjacent to the deposition area 728. Obstacle zone 730 is defined between collar 764 and matrix 740. This item is shaped to provide a conformable surface 7 6 6 unfolded close to the surface of the substrate, where relatively small gaps provide venting of the deposition zone to the surrounding atmosphere. The established gap is between the collar-compliant surface 7 6 4 and the matrix is sufficiently small that the exhaust must reach the speed required in the obstacle zone, at least part of which passes between the collar and the matrix. At this end, the conformable surface 7 6 4 of the collar 7 6 2 is shaped so as to be substantially parallel to the surface of the substrate 7 4 0. When the surface of the substrate 740 is essentially flat, when it is referred to herein, the compliant surface of the substrate is also substantially flat. Boundary effects, such as high temperature and the remaining reactive components, occur near the end of the duct 760, and the extendable deposition area passes over the matrix area directly before the end of the duct 760. The collar 7 6 4 should extend outward a sufficient distance from the junction of the duct 7 600 to exclude the surrounding gas from mixing backwards into the deposition area (due to the possible Venturi effect) and ensure that the paper is sunk Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) -42- (Please read the precautions on the back before filling this page) Order _ · --- line-492018 A7 B7 V. Description of Invention 4) (Please read the notes on the back before filling out this page) The entire area of the plot (when it extends from the previously mentioned boundary effect), protected from the surrounding air flowing from the high-speed exhaust back to sweep through the collar The area between the substrate and the extension collar guarantees protection against contamination throughout the extended sedimentary area. The collar diameter should be at least twice the inner diameter of the catheter 760, and preferably it should be at least five times the inner diameter of the catheter 760. The inner diameter of the catheter 7 60 is typically in the range of 1 to 30 mm, and is preferably between 12 and 20 mm. In operation, the collar 7 6 4 is substantially parallel to the coating substrate. The surface is 7 4 0, and the distance is 1 cm or less. Preferably, the surface facing the collar and the matrix are between 2 and 5 mm away. Adjusting spacers, such as three fixed or adjustable legs (not shown), can be provided over the collar to help maintain the proper distance between the collar and the matrix. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 7 illustrates that the system is particularly advantageous for coatings to substrates that are too large, or for handling in a specially controlled environment such as a vacuum or clean room. This shows that the coating technology is advantageous because it can be done under atmospheric pressure and is more convenient in the "outdoor" position. A series of concentric catheters 7 2 2, 738, 744, 752 and 760 form a coating head 768 which can be supplied from a relatively small flexible tube and can be sufficiently small and easy to carry. Large substrate coatings can be carried by it. The coated head is passed over the substrate grating or similar pattern repeatedly, or arranged in a row of coating heads across the substrate to cumulatively provide a uniform coating, or a column of coating heads is formed by a grating. In addition, in order to facilitate thin film coating of objects that were previously too large to be coated, this technique allows larger coated cells to have their substrates previously authored under vacuum. The manufacturing economy can be achieved by coating these larger units. Especially when mass-producing substrates. This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) ._ Guilty 492018

五、發明說明（41 ) 〇 (請先閱讀背面之注意事項再填寫本頁) 圖7與8之說明體系也特別適合於生產對氧化敏感之 塗層係’如大部分金屬塗層。爲提供該塗層故燃料經導管 7 4 4 (其近於霧化液體介質及塗層前驅物）送入，而氧 化劑經導管7 5 2送入。霧化氣體經導管7 3 8送入及/ 或該液體介質經導管7 2 2送入，其可爲帶有燃料價値之 材料’其可爲與塗層前驅物反應之材料或它們可惰性材料 °當所製作之塗層或塗層前驅物材料係對氧敏感，則須在 反應及沉積區保持減壓，以確保送入氧化劑之總量限制在 低於提供反應區所須的全部燃燒燃料之量，即氧化劑之提 供量低於化學計量。通常，須限制燃料過剩以限制任何火 焰區在殘留的熱氣與混合氧發展。當所製作之塗層與前驅 物材料爲耐氧性或由氧存在而增強，如在大部分氧化物塗 層之生產中，氧化或天然大氣可提供於反應及沉積區，由 送入一化學計量的或過多量的氧化劑。此外，對耐氧性試 藥及產物，氧化劑可經內部導管7 4 4送入而燃料經外部 導管752送入。 經濟部智慧財產局員工消費合作社印製 經導管7 6 0供應之惰性氣體必須充分以防護導管內 _一一一·- 部表面不與導管產生之反應性氣反應，當由反應區加入其 它氣體必須充分，以提供障礙區所須的氣體速度。 除燃燒方法之外，能量輸入可由機械裝置達成，其說 明如圖7及8。例如可經導管7 2 2通過電流而完成，於 導管中產生電阻加熱，之後轉移予該液體媒介及塗層前驅 物（當其通經導管）。當能量輸入係由燃燒以外之方法完 -44 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明42 ) (請先閱讀背面之注意事項再填寫本頁) 成，明顯地所有導管722 ，738，744，752及 7 6 0係不須要的。通常導管7 4 4及7 5 2中一或兩個 可省略，當能量輸入係由一個電動的能量輸入機構所提供 〇 沉積塗層之多孔性或密度可由變化火焰區與基質表面 沉積區間之距離而改良。一般而言，縮短此距離將提供塗 層密度增加，而增加距離則將提供較多的多孔塗層。 在說明C A C C V D技術中，反應區通常與燃燃燒料 之火焰共同擴張。當然，火焰區與基質必須保持充分地遠 離基質使基質不被高溫損傷（當火焰區愈接近基質表面將 產生愈高溫度）。基質溫度敏感性隨基質材料而改變，在 沉積區中基質表面之溫度，典型地，較最高火焰溫度至少 低6〇〇°C 。 經濟部智慧財產局員工消費合作社印製 當某些供選擇的方法用於供應能量輸入，如當主要能 量輸入爲預熱液體其經混合以流動液流中，或在到達反應 區之前，在反應區中製造的最高溫度基本上較低於燃燒能 量輸入所製造的最高溫度。在該案例中，可由變化介於反 應區與基質表面之間的距離而調整塗層性質，而不太須要 考慮基質過熱。因此，術語反應區及沉積區係用以定義此 裝置之機能區，而不是要定義互相排除區。即在某些用途 中塗層前驅物之反應可發生在沉積區的基質表面。 當主要能量輸入不是燃燒火焰，生成較低最高溫度將 可適用於溫度敏感塗層材料，如某些有機材料。尤其是， 聚合物可沉積作爲保護塗層或作爲介電夾層材料以用於電 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） - 45- 492018 A7 _ B7 五、發明說明43 ) (請先閱讀背—^本頁) 容器’積體電路或微處理器。例如聚醯亞胺塗層可由其聚 醯fee酸前驅物提供。類似地，聚四氟乙烯塗層可由低分子 量前驅物提供。 • 在離開反應區之前，將能量輸入流動液流，通常不須 由加熱基質提供能量予沉積區，而這是其它塗層技術時常 所須要的。在本文的沉積系統中，因爲基質作爲加熱井以 冷卻存在沉積區中之氣體，而非加熱它們，基質所受之溫 度基本上低於系統所承受的溫度，其須要將能量經基質傳 送至沉積區◦因此，CACCVD塗層方法可用於許多溫度敏 感基質材料其無法由其它技術（包含經基質加熱）塗佈者。 寬廣範圍的前驅物可使用作氣體，蒸汽或溶液◦宜使 用最低成本前驅物而產生所欲之形態。對沉積各種金屬或 準金屬適合的化學前驅物（不限於）如下： P t 鉑一乙醯基丙酮化物[Pt(CH3C〇CHC〇CH3)2](在甲苯 /甲醇中），鋁一（HFAC2)，二苯基一（1， 5 —環辛二燏）鉑（I I ) [Pt(C〇D)在甲苯一丙院 中〕鉑硝酸鹽（在水性氫氧化銨溶液中） 經濟部智慧財產局員工消費合作社印製V. Description of the invention (41) 〇 (Please read the notes on the back before filling out this page) The description system of Figs. 7 and 8 is also particularly suitable for the production of oxidation-sensitive coatings such as most metal coatings. To provide this coating, the fuel is fed through a conduit 7 4 4 (which is close to the atomized liquid medium and the coating precursor), and the oxidant is fed through a conduit 7 5 2. The atomizing gas is fed through the conduit 7 3 8 and / or the liquid medium is fed through the conduit 7 2 2 and it may be a material with a fuel price ′ it may be a material that reacts with the coating precursor or they may be inert materials ° When the coating or coating precursor material is sensitive to oxygen, the pressure in the reaction and deposition zone must be maintained to ensure that the total amount of oxidant sent is limited to less than the total combustion fuel required to provide the reaction zone The amount, that is, the amount of oxidant provided is less than stoichiometric. In general, excess fuel must be restricted to limit the development of any hot zone with residual hot gas and mixed oxygen. When the produced coating and precursor materials are resistant to oxygen or enhanced by the presence of oxygen, such as in the production of most oxide coatings, oxidized or natural atmospheres can be provided in the reaction and deposition area by feeding a chemical A metered or excessive amount of oxidant. In addition, for oxygen-resistant reagents and products, the oxidant can be fed through the internal conduit 7 4 4 and the fuel can be fed through the external conduit 752. The inert gas supplied by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed through the duct 7 60 must be fully protected from the inside of the duct. One-on-one surface does not react with the reactive gas generated by the duct. It must be sufficient to provide the gas velocity required in the obstacle area. In addition to the combustion method, the energy input can be achieved by a mechanical device, which is illustrated in Figures 7 and 8. For example, it can be accomplished by passing electric current through the conduit 7 2 2, generating resistance heating in the conduit, and then transferring to the liquid medium and the coating precursor (when it passes through the conduit). When the energy input is completed by methods other than combustion -44-This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Invention Description 42) (Please read the precautions on the back before Fill out this page), obviously all ducts 722, 738, 744, 752 and 760 are unnecessary. Usually one or two of the tubes 7 4 4 and 7 5 2 can be omitted. When the energy input is provided by an electric energy input mechanism, the porosity or density of the deposited coating can be changed by changing the distance between the flame zone and the deposition interval on the substrate surface. And improved. In general, shortening this distance will provide increased coating density, while increasing distance will provide more porous coatings. In explaining the C A C C V D technology, the reaction zone usually expands together with the flame of the combustion fuel. Of course, the flame zone and the substrate must be kept sufficiently far from the substrate to prevent the substrate from being damaged by high temperatures (the closer the flame zone is to the surface of the substrate, the higher the temperature will be). The substrate temperature sensitivity varies with the substrate material. The temperature of the substrate surface in the deposition zone is typically at least 600 ° C lower than the maximum flame temperature. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs when certain alternative methods are used to supply energy input, such as when the main energy input is a preheated liquid which is mixed to flow in a liquid stream, or The highest temperature produced in the zone is substantially lower than the highest temperature produced by the combustion energy input. In this case, the coating properties can be adjusted by varying the distance between the reaction zone and the surface of the substrate without having to consider the substrate overheating. Therefore, the terms reaction zone and deposition zone are used to define the functional area of the device, not to define mutually exclusive areas. That is, in some applications, the reaction of the coating precursor may occur on the surface of the substrate in the deposition zone. When the main energy input is not a combustion flame, generating a lower maximum temperature will be suitable for temperature-sensitive coating materials, such as certain organic materials. In particular, the polymer can be deposited as a protective coating or as a dielectric interlayer material for electrical paper sizes. Applicable to China National Standard (CNS) A4 (210 X 297 mm)-45- 492018 A7 _ B7 V. Invention Note 43) (Please read back-^ this page first) Container 'Integrated Circuit or Microprocessor. For example, polyimide coatings can be provided by their poly (fee acid) precursors. Similarly, the polytetrafluoroethylene coating may be provided by a low molecular weight precursor. • Before leaving the reaction zone, the energy is input into the flowing fluid stream. It is usually not necessary to provide energy to the deposition zone by a heated substrate, which is often required by other coating technologies. In the deposition system of this article, because the substrate acts as a heating well to cool the gases stored in the deposition zone, rather than heating them, the temperature to which the substrate is subjected is substantially lower than the temperature to which the system is subjected. Therefore, CACCVD coating methods can be used for many temperature-sensitive substrate materials that cannot be coated by other techniques, including substrate heating. A wide range of precursors can be used as gas, steam or solution. It is best to use the lowest cost precursor to produce the desired form. Suitable chemical precursors (not limited to) for the deposition of various metals or metalloids are as follows: Pt platinum-acetamidoacetone [Pt (CH3C〇CHC〇CH3) 2] (in toluene / methanol), aluminum (HFAC2 ), Diphenyl mono (1,5-cyclooctanedifluorene) platinum (II) [Pt (COD) in toluene-C-alumina] platinum nitrate (in aqueous ammonium hydroxide solution) Intellectual property of the Ministry of Economic Affairs Printed by Bureau Consumers Cooperative

Mg 環烷鎂，2 —乙基己酸鎂[Ma(〇〇CCH(C2H5)C4Hh)2] ，環烷酸鎂，Mg — TMHD，Mg — a c a c， Mg —硝酸鹽，Mg — 2，4 —戊二酸鹽 Si 四乙氧基矽烷〔Si (〇C2H5)4〕，四甲基矽 院，二砂酸，偏砂酸 P 三乙基磷酸鹽〔C2H5〇）3P〇4〕，三乙基亞磷 酸鹽，三苯基亞磷酸鹽 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 46 _ κι Β7 五、發明說明44 ) L a 2 —乙基己酸鑭[La(〇〇CCH(C2H5)C4H9)3]硝酸鑭 (請先閱讀背面之注音？事項再填寫本頁) [La(N〇3)3]，La — acac，La —異丙氧化物，三（ 2，2，6，6 —四甲基一 3，5 —庚二酸鹽）， 鑭 La(CllHl9〇2)3] C r 硝酸鉻〔C r ( N〇3 ) 3〕 ，2 —乙基己酸鉻 [Cr(0 0CCH(C2H5)C4H9)3]，C r —硫酸鹽，羰基鉻， 鉻（I I I )乙醯基丙酮化物 N i 硝酸鎳N i ( N〇3 ) 2 ·〕（在水性氫氧化銨中） ，N 1 -乙醯基丙酮化物，N 1 — 2 —乙基己酸鹽 ，N : -環烷烴醇，N i -二羰基 A 1 硝酸鋁〔A 1 ( N 0 3 ) 3〕，乙醯基丙酮化鋁 --線· [A1(CH3C〇CHC〇CH3)3]，三乙基銘，A 1 — s — 丁氧 化物，A 1 —異丙氧化物，A 1 — 2 —乙基己酸鹽 p b 2 —乙基己酸鉛[Pb(〇〇CCH(C2H5)C4H9)2]，環烷酸鉛 ，Pb— TMHD，Pb —硝酸鹽 Z r 2 —乙基己酸锆[Zr(〇OCCH(C2H5)C4H9)4]，正丁氧化 锆，锆（HFAC，），Zr -乙醯基丙酮化物， 經濟部智慧財產局員工消費合作社印製 Z r -正丙醇，Z r -硝酸鹽 B a 2 —乙基己酸鈹[Ba(〇〇CCH(C2H5)C，H9)2]，B a 一硝酸鹽，B a -乙醯基丙酮化物，B a —Mg magnesium naphthenate, magnesium 2-ethylhexanoate [Ma (〇〇CHCH (C2H5) C4Hh) 2], magnesium naphthenate, Mg — TMHD, Mg — acac, Mg — nitrate, Mg — 2, 4 — Glutamate Si Tetraethoxysilane [Si (〇C2H5) 4], Tetramethylsilicon, disarsonic acid, metasarnic acid P triethyl phosphate [C2H5〇) 3P〇4], triethyl Phosphite, triphenylphosphite This paper is dimensioned to the Chinese National Standard (CNS) A4 (210 X 297 mm) _ 46 _ κ Β7 V. Description of the invention 44) L a 2 —Ethylhexanoate lanthanum [ La (〇〇CCH (C2H5) C4H9) 3] Lanthanum nitrate (Please read the note on the back? Matters before filling out this page) [La (N〇3) 3], La — acac, La — isopropoxide, three (2,2,6,6-tetramethyl-3,5-pimelic acid salt), lanthanum La (CllH19O2) 3] C r chromium nitrate [C r (N〇3) 3], 2-B Chromium hexanoate [Cr (0 0CCH (C2H5) C4H9) 3], C r —sulfate, chromium carbonyl, chromium (III) ethionyl acetonate N i nickel nitrate N i (N〇 3) 2 ·] ( In aqueous ammonium hydroxide), N 1 -acetamidoacetone, N 1-2 -ethylhexanoate, N: -cycloalkanol , N i -dicarbonyl A 1 aluminum nitrate [A 1 (N 0 3) 3], ethyl acetoacetonate--line · [A1 (CH3C0CHC〇CH3) 3], triethylamine, A 1 — S —butoxide, A 1 —isopropoxide, A 1 —2 —ethylhexanoate pb 2 —lead ethylethylhexanoate [Pb (〇〇CCH (C2H5) C4H9) 2], naphthenic acid Lead, Pb—TMHD, Pb—nitrate Zr 2 —zirconium ethylhexanoate [Zr (〇OCCH (C2H5) C4H9) 4], n-butoxide, zirconium (HFAC,), Zr-acetamidoacetone Printed by Zr-n-propanol, Z r-nitrate B a 2 -ethylhexanoate beryllium [Ba (〇〇CCH (C2H5) C, H9) 2], B a Mononitrate, B a -Ethylacetone, B a —

TMHD N b 乙氧化鈮，四（2,2,6,6 —四甲基—3,5 —庚烷二翁特 (d i ο n a t 〇))鈹 Τι 鈦（I V )異丙氧化物[Ti(〇CH(CH3)2)4]，鈦（I V 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐）~\ " 492018 A7 ____Β7_ 五、發明說明45 ) (請先閱讀背面之注音？事項再填寫本頁) )乙醯基丙酮化物，鈦-二異丙氧化物一二乙醯基 丙酮化物，T 1 一正丁氧化物，T i 一 2 —乙基己 酸鹽，T 1 一氧化物二（乙醯基丙酮化物） Y 2 —乙基己酸釔[Y(〇OCCH(C2H5)C4H9)3]，Y —硝酸 鹽，Y -異丙氧化物，Y -環烷酸鹽 Sr 硝酸緦[Sr(N〇3)2]，2 —乙基己酸緦，Sr(TMHD)TMHD N b Niobium ethoxide, tetrakis (2,2,6,6-tetramethyl-3,5-heptane diont (di ο nat 〇)) beryllium Titanium (IV) isopropoxide [Ti ( 〇CH (CH3) 2) 4], titanium (IV This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) ~ \ 492018 A7 ____ Β7_ V. Description of the invention 45) Note to note? Please fill in this page again for matters))) Ethyl acetonate, titanium-diisopropoxide-diethyl acetonate, T 1 -n-butoxide, T i -2-ethylhexanoate, T 1 bis (ethyridylacetone) Y 2 —yttrium ethylhexanoate [Y (〇OCCH (C2H5) C4H9) 3], Y—nitrate, Y—isopropoxide, Y—naphthene Sr Sm (III) nitrate [Sr (N03) 2], S (2-ethylhexanoate), Sr (TMHD)

Co 鈷環烷，C 〇 -羰基，C 〇 -硝酸鹽， A u 氯三乙基膦金（I)，氯三苯基膦金（I) B t r 1甲基硼酸鹽，B —三甲氧基硼（boroxine) K 鉀乙氧化物，鉀三級丁氧化物，2，2，6，6 一四甲基庚烷一 3 ，5 —二酸鉀 N a 2，2，6 ，6 —四甲基庚烷—3，5 —二酸鈉 ，乙氧化鈉，三級丁氧化鈉 L 1 2，2，6，6 —四甲基庚烷一3，5 —二酸鋰 ，乙氧化鋰，三級丁氧化鋰 C u Cu (2 —乙基己酸鹽）2，Cu —硝酸鹽，Cu -乙醯基丙酮化物 經濟部智慧財產局員工消費合作社印製 P d 硝酸鈀（在水性氫氧化銨溶液中）（NH4)2Pd(N〇2)2， ，P d —乙醯基丙酮化物，六氯鈀銨 I r Η 2 I r C I 6 (在5 0 %乙醇水溶液中），I r — 一乙醯基丙酮化物，I r 一羰基 A g 銀硝酸鹽（在水中），硝酸銀，氟乙酸銀，乙酸銀 Ag —環己烷丁酸鹽，Ag - 2 —乙基己酸鹽 C d 鎘硝酸鹽（在水中），C d — 2 -乙基己酸鹽 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）~~ 48 492018 A7 B7 五、發明說明46 )Co Cobalt naphthene, Co-carbonyl, Co-nitrate, Au Chlorotriethylphosphine gold (I), Chlorotriphenylphosphine gold (I) B tr 1 methyl borate, B-trimethoxy Boroxine K potassium ethoxide, potassium tertiary butoxide, 2,2,6,6 tetramethylheptane-3,5-diacid potassium N a 2,2,6,6-tetramethyl Heptane-3,5-sodium dioxoate, sodium ethoxide, tertiary butoxide L 1 2,2,6,6-tetramethylheptane-lithium 3,5-diacid, lithium ethoxide Lithium butoxide Cu Cu (2-ethylhexanoate) 2, Cu-nitrate, Cu-acetamylacetone Printed by Pd Palladium Nitrate (in aqueous ammonium hydroxide) (In solution) (NH4) 2Pd (N〇2) 2,, P d-acetamidoacetone, hexachloropalladium ammonium I r Η 2 I r CI 6 (in 50% ethanol aqueous solution), I r-a Ethyl acetonate, I r monocarbonyl A g silver nitrate (in water), silver nitrate, silver fluoroacetate, silver acetate Ag-cyclohexanebutyrate, Ag-2-ethylhexanoate C d cadmium nitrate Salt (in water), C d — 2-ethylhexanoate Degree of Chinese National Standard (CNS) A4 size (210 X 297 mm) ~~ 48 492018 A7 B7 V. invention is described in 46)

Nb 鈮（2 —乙基己酸鹽） M 0 (NH4)6M〇7〇24，Mo (C〇）6 ，Mo —二氧化物二 ( 乙 醯 基丙酮化物） F e F e ( N〇3) 39H2〇， F e —乙醯基丙酮化物 S η S η C I22H2C)，Sn — 2—乙基己酸鹽，Sn — 四 — 正丁基錫，Sn —四 甲基 I η I η ( N〇3) 3XH2〇， I η -乙醯基丙酮化物 B i 硝 酸 鉍 ，2 —乙基己酸鉍 R u R U — 乙醯基丙酮化物 Z n Z η — 2—乙基己酸鹽，Z η硝酸鹽，Ζ η乙酸 W W — —f一 /\ 羰基，W -六氟化物 ，鎢酸 在 大 部 分 混合物金屬前驅物及 或準金屬前驅物沉 之 案 例 中 沉 積係通常以化學計量 :對於相對部分的金屬 / 或 準 金 屬 其係由反應混合物中 1前驅物提供。然而， 關 係 並 非 準 確 亦非完全可預頂期。 然而，此在達成所欲: 成 物 塗 佈 層 或 粉末並不存在任何重 :要的問題，因爲得到. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 欲組成物的塗佈層或粉末所須的前驅物的化學計量相對量 ，可立即地決定而不須不適當的實驗以得到任何組塗層參 數。一旦當一組塗層參數下的化學前驅物之比例被決定（ 以得到所欲組成物之塗層或粉末），可以高度可頂期結果 之方式複製塗層。如此，若所欲塗層或粉末將包含二種金 屬其具有特別的預定比例，可由含有此二種金屬預定化學 計量比例的二種化學前驅物開始。若決定此二種金屬不以 預定比例作沉積’將調整二種前驅物相對量直到達成沉積 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公董）-49 - ^018 A7 B7 i、發明說明47 ) 年才料所欲之金屬比例。之後此實驗測定將有助於未來之沉 積。 (請先閱讀背面之注意事項再填寫本頁) c C V D之優點在可沉積非常薄的均勻層其可作爲包 '埋於電容器及電阻器之介電層。就包理於電阻器而言’沉 積層係典型地至少約4 Ο A厚。材料可沉積成爲任何所欲 厚度；然而，就由C C V D形成抵抗材料層，厚度很少超 過5〇，〇〇〇A (5微米）。通常薄膜厚度在1〇〇一 1〇，000A範圍，大部分通常在300 — 50〇〇入 範圍。因爲層愈薄，電阻愈高且材料愈少，例如使用鉑時 ’ C C V D方法有利者在可以沉積非常薄的膜。塗層薄度 也可促進在程序中快速鈾刻，其可形成分離的電阻器。 由C C V D製作塗層之實施例包含二氧化矽塗層其由 四乙氧基矽烷在異丙醇及丙烷中之溶液所製造 •，鈾塗層係由鈾一乙醯基丙酮化物[pt(CH3COCHCOCH3)2] 在甲苯及甲醇中之溶液所製造；且鎳一攙添L a C r〇3塗 層之製造係由硝酸鑭在乙醇中之溶液，硝酸鉻在乙醇中之 溶液及硝酸鎳在乙醇中之溶液。 經濟部智慧財產局員工消費合作社印制衣 電阻器之電阻係決定於材料之電阻，及電阻器之長度 與截面積。當由材料效率觀點而須要非常薄的膜，其中電 源負載（電流）高，須要較厚的膜。就較高的電源負載需 求其須要較厚的膜，須較高的材料之電阻，例如使用更重 攙添金屬作爲抵抗材料。 新穎的抵抗材料可由C C V D及CACCVD沉積，其中 由CCVD及CACCVD方法結合傳統的或改良印刷電路板技 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -50- 492018 A7 ---B7 五、發明說明如) 術’可形成非常小的，分離的電阻器。新穎的抵抗材料係 由CCVD及CACCVD將導電性材料，特別是金屬如鉑及鎳 ，與高電阻（介電）材料如氧化矽共沉積而形成。已發現非常 小量的高度抵抗材料，例如約〇 · 1 ^ t %至約2 0 w t % ’可非常深切地降低導電性材料之導電性質。例如 鉛雖然爲極佳導體，當與〇 · 1至約5 w t %的氧化矽共 沉積’可作爲電阻器，其電阻爲氧化矽共沉積程度之函數 。當不受限於理論，相信當導體與少量的非導體由 C CVD或CA C CVD共沉積，此非導體通常均質地以 單分子或奈米級分子串簇沉積於導體上。 經濟部智慧財產局員工消費合作社印製 對導電性金屬與少量的介電材料之混合物由C C V D 或C A C C V D沉積的抵抗材料而言，若抵抗材料由 C CVD或CA C CVD作沉積，金屬必須能夠由含氧系 統沉積爲零原子價金屬。使用火焰沉積零原子價狀態之準 則在於，在沉積溫度下，金屬之氧化電位必須低於二氧化 碳或水之氧化電位。（在室溫下，水具有較低之氧化電位 ;在其它溫度下二氧化碳具有較低之氧化電位）。零原子 價金屬其可立即地由C C V D沉積者，爲帶有氧化電位約 等於銀或較低者。如此，A g、A u、P t 、及I r可由 正統C C VD沉積。零原子價金屬其帶有某些較高氧化電 位者可由C A C C V D沉積，其中可提供較多的減壓。Nb Niobium (2-ethylhexanoate) M 0 (NH4) 6M0704, Mo (C0) 6, Mo-dioxide di (ethylamidoacetone) F e F e (N〇3 ) 39H2〇, F e —Ethyl acetonate S η S η C I22H2C), Sn — 2-ethylhexanoate, Sn — tetra-n-butyltin, Sn — tetramethyl I η I η (N〇3 ) 3XH2〇, I η-acetamidoacetonate B i bismuth nitrate, 2-Ethylbismuthrulate Ru RU-Ethylacetone Zn Z η-2-Ethylhexanoate, Z η Nitrate , Z η acetic acid WW — —f- / carbonyl, W-hexafluoride, tungstic acid in most cases of metal precursors and or metalloid precursors deposit deposition case is usually stoichiometric: for the opposite part of the metal It may be provided by a precursor in the reaction mixture. However, the relationship is neither exact nor fully predictable. However, here is what I want: the coating or powder of the product does not have any important: important problems, because you get. (Please read the precautions on the back before filling out this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The stoichiometric relative amount of precursors required to make the coating or powder of the composition can be determined immediately without undue experimentation to obtain any set of coating parameters. Once the ratio of chemical precursors under a set of coating parameters is determined (to obtain the coating or powder of the desired composition), the coating can be replicated in a highly predictable manner. Thus, if the desired coating or powder will contain two metals with a particular predetermined ratio, it may begin with two chemical precursors containing a predetermined stoichiometric ratio of the two metals. If it is decided that the two metals are not deposited at a predetermined ratio, the relative amounts of the two precursors will be adjusted until the deposition is achieved. The paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 GD) -49-^ 018 A7 B7 i. Description of the invention 47) The proportion of the metal that is expected only after years. This experimental determination will then contribute to future accumulation. (Please read the precautions on the back before filling out this page.) The advantage of C C V D is that it can deposit a very thin uniform layer, which can be used as a dielectric layer embedded in capacitors and resistors. In terms of resistors, the 'sedimentation layer is typically at least about 4 OA thick. The material can be deposited to any desired thickness; however, a layer of resistive material is formed from C C V D and rarely exceeds 50,000 A (5 microns) in thickness. The film thickness is usually in the range of 10,000 to 10,000 A, and most of them are usually in the range of 300 to 50,000. Because the thinner the layer, the higher the resistance and the less material, such as when using platinum, the 'C C V D method is advantageous in that very thin films can be deposited. The thinness of the coating can also facilitate rapid uranium engraving during the procedure, which can form a separate resistor. Examples of coatings made by CCVD include a silicon dioxide coating made of a solution of tetraethoxysilane in isopropanol and propane. The uranium coating is made of uranium-acetamidoacetone [pt (CH3COCHCOCH3 ) 2] Manufactured in toluene and methanol solutions; and nickel-added LaCrO3 coatings are made from a solution of lanthanum nitrate in ethanol, a solution of chromium nitrate in ethanol, and nickel nitrate in ethanol In solution. The clothing printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, consumer cooperatives. The resistance of a resistor is determined by the resistance of the material, and the length and cross-sectional area of the resistor. When a very thin film is required from the viewpoint of material efficiency, in which the power supply load (current) is high, a thicker film is required. Higher power loads require thicker films and higher resistance of materials, such as the use of heavier additive metals as resistance materials. Novel resistive materials can be deposited by CCVD and CACCVD, in which CCVD and CACCVD methods are combined with traditional or improved printed circuit board technology. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -50- 492018 A7- --B7 V. Description of the invention Such as) operation can form very small, separated resistors. Novel resistive materials are formed by co-deposition of conductive materials, especially metals such as platinum and nickel, with high resistance (dielectric) materials such as silicon oxide by CCVD and CACCVD. It has been found that very small amounts of highly resistant materials, such as about 0.1 to about 20 wt% ', can very deeply reduce the conductive properties of conductive materials. For example, although lead is an excellent conductor, it can be used as a resistor when co-deposited with silicon oxide of 0.1 to about 5 wt%, and its resistance is a function of the degree of silicon oxide co-deposition. While not being limited by theory, it is believed that when a conductor and a small amount of non-conductor are co-deposited by C CVD or CA C CVD, this non-conductor is usually deposited homogeneously on the conductor as a single molecule or a cluster of nanoscale molecules. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs on resistive materials deposited by CCVD or CACCVD for a mixture of conductive metals and a small amount of dielectric materials, if the resistive materials are deposited by C CVD or CA C CVD, the metal must Oxygen-containing systems are deposited as zero atomic valence metals. The principle of zero atomic state using flame deposition is that at the deposition temperature, the oxidation potential of the metal must be lower than the oxidation potential of carbon dioxide or water. (At room temperature, water has a lower oxidation potential; carbon dioxide has a lower oxidation potential at other temperatures). Zero atomic valence metals which can be deposited immediately by C C V D are those with an oxidation potential approximately equal to silver or lower. As such, Ag, Au, Pt, and Ir can be deposited from the orthodox CCVD. Zero atomic valence metals with certain higher oxidation potentials can be deposited by C A C C V D, which can provide more decompression.

Ni、Cu、In、Pd、Sn、Fe、Mo、C〇& P b最佳由CA C CVD沉積。在此，金屬也包含合金其 係該零原子價金屬之混合物。可與零原子價金屬共沉積之 -51 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明49 ) (請先閱讀背面之注意事項再填寫本頁) 較佳的介電材料爲金屬氧化物或準金屬氧化物，如氧化砂 、氧化錫、氧化鉻、氧化駄、氧化鈽、氧化鋅、氧化錯、 磷氧化物、鉍氧化物、稀土族金屬一般氧化物，及其混合 物。砂、銘、絡、鈦、鈽、鋅、銷、鎂、鉍，稀土族金屬 ，及磷各自具有相對的高氧化電位，使前述任何金屬與建 議之電氣抵抗材料前驅物共沉積時，金屬將以零原子價狀 態沉積且摻雜物將沉積爲氧化物。如此，即使未使用火焰 ，介電物須具有較高的氧化態，磷化，碳化，氮化，或硼 化電位以形成所須的兩相。 再次，就更具氧反應性之金屬與金屬合金而言， C A C C V D可以是選擇方法之一。即使若由正統 C C VD可將金屬沉積爲零原子價金屬，宜提供控制氣壓 ，即C A C C V D，若其上作沉積之基質材料將氧化。例 如銅及鎳基質會立即地氧化，且可由C A C C V D沉積於 這些基質上。 經濟部智慧財產局員工消費合作社印製 另一型的抵抗材料其在基質上由C C V D沉積爲薄層 者爲 ''導電性氧化物〃。尤其是，B 1 2 R u 2〇7及 S r R u 0 3爲導電性氧化物其可由C C V D沉積◦雖然這 些材料爲 ''導電性〃，當沉積爲無定形態其傳導係相對的 低；如此，一薄層的該混合氧化物可用於形成分離的電阻 器◦如同導電性金屬，該 ''導電性氧化物〃可攙添以介電 材料，如金屬或準金屬氧化物，以增加其電阻。該混合氧 化物可沉積爲無定形層或結晶狀層，無定形層傾向於在低 沉積溫度沉積，且結晶狀層傾向於在較高的沉積溫度沉積 -52- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明鈿) 。作 有較 爲'、 ，可 1〇 A u 準金 性材 加強 w t 充分 銅氧 =〇 有超 種抵 達成 爲電阻器，無定形層通常較佳的，其較結晶狀材料帶 高的電阻。如此，當這些材料以其正常結晶狀態分類 導電性氧化物〃 ’此無疋形氧化物即使在未攙添形熊 製造良好的電阻。在某些案例中宜形成低電阻，1 一 0 Ω，可加入電阻器及加強導電性摻雜物如p t、 、Ag、Cu或F。若攙添以介電材料，例如金屬或 屬氧化物，以增加導電性氧化物之電阻，或加強導電 料以降低導電性氧化物之電阻，該均質混合的介電或 導電性材料通常佔抵抗材料約0 · 1 w t %至約2 0 %，較佳地至少約〇 · 5 w t %。 還有種種其它”導電性材料”其雖然爲導電性，具有 地電阻以形成依據本發明之電阻器。實施例包含釔鈹 化物及 La!- xSrxCo〇3，〇$x€l ，例如 X • 5。通常，任何混合氧化物其在低於一臨界溫度具 導電性質，在高於該臨界溫度可作爲電阻材料。該種 抗材料之沉積，可能由對前述前驅物作適當之選擇而 (請先閱讀背面之注音？事項再填寫本頁) . -·線· 經濟部智慧財產局員工消費合作社印製 爲製造金屬/氧化物抵抗材料薄膜，所用之前驅物溶 液包含金屬前驅物及金屬或準金屬氧化物前驅物。例如爲 製造鉑/氧化矽薄膜，沉積溶液包含鈾前驅物，如鉑（ I I ) 一乙醯基丙酮化物或二苯基一（1 ，5 -環辛二烯 )鋁（I I ) 〔 P t ( C〇D )〕及含矽前驅物，如四乙 氧基矽烷。前驅物之混合通常依據金屬對金屬或準金屬（ 將形成氧化物）沉積爲薄 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 492018 A7 _ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明h ) 屬對氧化物之精確的比例必須由實驗法決定。因此，依據 本發明形成電阻薄膜之前驅物溶液包含前驅物其可形成金 屬及另一前驅物其可形成氧化物，兩者重量之比例介於約 1〇〇:〇·2至約100:20。 類似地，當導電性氧化物沉積以形成抵抗材料層，各 金屬之前驅物，例如Β 1及R u，及S r及R u，係採適 當比以提供正確的導電性氧化物之化學計量。此外，針對 任何特別的沉積條件，須作某些實驗以提供精確的前驅物 比例，以製造所欲混合氧化物的化學計量。此外，將以介 電金屬氧化物或準金屬氧化物對導電性氧化物作攙添，以 增加沉積材料之電阻，或以加強導電性材料作攙添以降低 沉積材料之電阻，提供額外的前驅物以製造少量的金屬氧 化物或準金屬氧化物，例如佔沉積攙添導電性金屬氧化物 的介於0 · 1與2 0 w t %，較佳爲至少約〇 · 5 w t % 〇 則述鋁前驅物爲可溶於甲苯。由音波振邊（s ο n i f i c a t i ◦ η) 可促進鉛前驅物之溶解。在鉑前驅物溶液中，便於加入四 乙基氧基矽烷其係溶於甲醇、異丙醇或甲苯而形成前驅物 溶液。之後可將前驅物溶液再以丙烷或其它有機溶劑稀釋 爲所欲濃度。 通常，爲運送，貯存，及處理，前驅物化學藥品係溶 於一般 仪體有機溶劑，如甲苯、異丙醇、甲醇、二甲苯、 及其混合物，其濃度（總前驅物化學藥品）介於約 〇 · 2 5與約2 0 w t %，較佳地至少約〇 . 5 w t %且 (請先閱讀背面之注意事項再填寫本頁) % . --線- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018Ni, Cu, In, Pd, Sn, Fe, Mo, Co and Pb are best deposited by CA C CVD. Here, the metal also includes an alloy and a mixture of the zero atomic valence metals. -51 which can be co-deposited with zero atomic valence metals-This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Description of Invention 49) (Please read the notes on the back before filling (This page) Preferred dielectric materials are metal oxides or metalloid oxides, such as sand oxide, tin oxide, chromium oxide, hafnium oxide, hafnium oxide, zinc oxide, oxide oxide, phosphorus oxide, bismuth oxide, rare earth Group metals are generally oxides, and mixtures thereof. Sand, metal, metal, titanium, hafnium, zinc, pins, magnesium, bismuth, rare earth metals, and phosphorus each have a relatively high oxidation potential. When any of the foregoing metals are co-deposited with the precursors of the proposed electrical resistance material, the metal Deposited in a zero atomic state and the dopants will be deposited as oxides. As such, even if no flame is used, the dielectric must have a higher oxidation state, phosphating, carbonizing, nitriding, or boronizing potential to form the required two phases. Third, for more oxygen-reactive metals and metal alloys, C A C C V D can be one of the selection methods. Even if the metal can be deposited as zero atomic valence metal by orthodox C C VD, it should be provided with a controlled gas pressure, that is, C A C C V D, if the substrate material deposited thereon will be oxidized. For example, copper and nickel substrates oxidize immediately and can be deposited on these substrates by C A C C V D. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Another type of resistance material is deposited on the substrate by C C V D as a thin layer. In particular, B 1 2 R u 207 and S r R u 0 3 are conductive oxides that can be deposited by CCVD. Although these materials are `` conductive '', when deposited in an amorphous state, their conductivity is relatively low. In this way, a thin layer of the mixed oxide can be used to form a separate resistor. Like a conductive metal, the `` conductive oxide '' can be supplemented with a dielectric material such as a metal or metalloid oxide to increase Its resistance. The mixed oxide can be deposited as an amorphous layer or a crystalline layer. The amorphous layer tends to be deposited at a low deposition temperature, and the crystalline layer tends to be deposited at a higher deposition temperature. CNS) A4 specification (210 X 297 mm) 492018 A7 B7 V. Description of the invention 钿). For comparison, 10 Au quasi-gold material can be strengthened w t sufficient copper-oxygen = 〇 There are more than one to achieve as a resistor, the amorphous layer is usually better, which has a higher resistance than crystalline materials. In this way, when these materials are classified in their normal crystalline state, the conductive oxide 〃 ′ This non- 疋 shaped oxide makes a good resistance even when it is not added. In some cases, it is desirable to form a low resistance, 1 to 0 Ω. Resistors can be added and conductive dopants such as p t,, Ag, Cu, or F can be added. If a dielectric material, such as a metal or an oxide, is added to increase the resistance of the conductive oxide, or the conductive material is strengthened to reduce the resistance of the conductive oxide, the homogeneous mixed dielectric or conductive material usually accounts for the resistance The material is about 0.1 wt% to about 20%, preferably at least about 0.5 wt%. There are various other "conductive materials" which, although conductive, have a ground resistance to form a resistor according to the present invention. Examples include yttrium beryllium and La! -XSrxCo03, 0 $ x € l, such as X • 5. In general, any mixed oxide is conductive below a critical temperature and can be used as a resistive material above this critical temperature. The deposition of this kind of anti-material may be made by making appropriate choices of the aforementioned precursors (please read the note on the back? Matters before filling out this page).-· Line · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy as a manufacturing metal / Oxide resist material thin film, the precursor solution used comprises a metal precursor and a metal or metalloid oxide precursor. For example, to make a platinum / silicon oxide film, the deposition solution contains a uranium precursor, such as platinum (II) -acetamidoacetone or diphenyl- (1,5-cyclooctadiene) aluminum (II) [P t ( CoD)] and silicon-containing precursors, such as tetraethoxysilane. The mixing of precursors is usually based on metal-to-metal or metalloid (which will form oxides) deposited as thin paper. The size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 public love) 492018 A7 _ B7 Employees of Intellectual Property Bureau Printed by the Consumer Cooperative V. Description of the Invention h) The exact ratio of oxide to oxide must be determined experimentally. Therefore, the precursor solution for forming a resistive film according to the present invention includes a precursor that can form a metal and another precursor that can form an oxide, and the weight ratio of the two is between about 100: 0.2 to about 100: 20 . Similarly, when conductive oxides are deposited to form a layer of resistive material, the precursors of each metal, such as B 1 and Ru, and S r and Ru, are appropriately ratioed to provide the correct stoichiometry of the conductive oxide. . In addition, for any particular deposition conditions, certain experiments must be performed to provide accurate precursor ratios to produce the stoichiometry of the desired mixed oxide. In addition, dielectric oxides or metalloid oxides are added to conductive oxides to increase the resistance of the deposited material, or reinforced conductive materials are added to reduce the resistance of the deposited material to provide additional precursors. Materials to produce small amounts of metal oxides or metalloid oxides, such as between 0.1 · 2 and 20 wt%, preferably at least about 0.5 wt% of the conductive metal oxide deposited. The precursor was soluble in toluene. Sonic edge (s ο n i f i c a t i ◦ η) can promote the dissolution of lead precursors. In the platinum precursor solution, it is convenient to add tetraethyloxysilane which is dissolved in methanol, isopropanol or toluene to form a precursor solution. The precursor solution can then be diluted to the desired concentration with propane or other organic solvents. Generally, for transportation, storage, and handling, precursor chemicals are dissolved in common organic solvents such as toluene, isopropanol, methanol, xylene, and mixtures thereof, and their concentrations (total precursor chemicals) are between About 0.25 and about 20 wt%, preferably at least about 0.5 wt% and (please read the notes on the back before filling this page) CNS) A4 size (210 X 297 mm) 492018

五、發明說明έ2 ) C請先閱讀背面Μ涑意事頊再填寫本貢) 典型地達到約5 w t %。通常，宜採用濃度濃縮形式蓮透 及處理以將成本減至最低，且將易燃液體之量減至最低° 同時，穩定性，特別低溫穩定性，例如必須考量低至 •- 2 0 °C，以免過度濃縮溶液發生沉澱。在沉積時，前驅 物溶液係典型地更加稀釋，例如在丙烷中，稀釋至濃度（ 總前驅物化學藥品）介於約0 · 〇 〇 5與約1 · 0 W t % ，較佳地介於約0 · 0 5與約1 · 0 w t %，更佳地不超 過約 0 · 6 w t %。 經濟部智慧財產局員工消費合作社印製 可由CAC CVD沉積的一項最重要金屬爲鎳，其$ 沉積爲攙添或未攙添形式。相對於導電性金屬如銅，線是 不貴的且可選擇性地蝕刻。由C A C C V D沉積零原孑價 鎳之重要前驅物爲硝酸鎳。鎳可自硝酸鎳的水性氨溶液ψ 沉積。然而，如前述，宜在近於超臨界條件自液體作沉積 。爲達此目的，硝酸鎳有利的載體包含液化氨或液化氮# 化物（Ν2〇）。氮氧化物可由加壓至700 — 8〇〇 p s 1而液化。氨可由加壓及/或低溫液化。無論載體爲 液化氨或液化氮氧化物，已發現有利地可加入少部分的7jC ，即高達約4 0 w t %，較佳地介於約2至約2 0 w t % ，（此液化氨或液化氮氧化物包含平衡，介於約6 0與，約 1 0 0 W t % )。水將升高超液化氨或液化氮氧化物之臨 界點。此可使易於在充分地低於超臨界點而操作’而不會 發生黏度與密度之變化。此外，所加入之水可降低溶液之 不穩定性。（然而，須知在某些案例中沉積可能係在未加 水的液化氨或液化氮氧化物中執行）。在該項鎳沉積溶液 -55- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明如) (請先閱讀背面之注音？事項再填寫本頁) 中’鎳前驅物與任何鎳摻雜物之前驅物係典型地以低濃度 存在，即自約〇 · OOlwt%至約2 · 5wt%。一般 較佳的鎳摻雜物爲鎳磷及/或鎳磷氧化物，例如磷酸鎳。 ’相信當使用含磷前驅物，如磷酸，主要摻雜物種類爲磷酸 鎳。其中水與液化氨或N 2 0係載體共溶劑之前驅物溶液， 其優勢在沒有可造成碳沉積的碳之存在。 當在液化氨中製備硝酸鎳前驅物溶液，硝酸鎳可以（ 與任何摻雜物前驅物）合宜地預溶於氫氧化銨溶液，且之 後將此溶液混合以液化氨。 經濟部智慧財產局員工消費合作社印製 在此敘述之抵抗材料可製造爲電阻器，其係包理於電 阻器中，或作爲積體電路中印刷電路板的表面上之電阻， 或其它電子用途。此係通常完成使用光罩其係用於在抵抗 材料層上形成抵抗圖樣，並使用適當蝕刻劑除去抵抗材料 上未由抗蝕劑覆蓋的面積。對金屬/氧化物抵抗材料層， 蝕刻劑之選擇係針對抵抗材料的金屬成分。典型地該蝕刻 劑爲酸或路易士酸，例如對銅的F e C I 3或C u C I 2。 硝酸及其它無機酸（例如硫酸、鹽酸、及磷酸）可用於蝕 刻鎳，種種其它金屬可如同導電性氧化物作沉積。 王水可用於蝕刻貴金屬，如鉑。王水爲極度侵蝕性酸 混合物，在此，其係用以飩刻金屬，特別是貴金屬，如鉛 及金。A u也可在碘化鉀/碘（K I / I 2 )溶液中蝕刻。 因爲C C V D使用火焰，從而傾向於產生氧化物，僅低反 應性金屬，即帶有低氧電位者，易於沉積爲金屬，而非沉 積爲氧化物。最容易沉積者爲貴金屬，如鋁與金◦當然這 -56- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _____B7 五、發明說明k ) (請先閱讀背面之注意事項再填寫本頁) 些金屬很貴，c C VD優勢地可用於沉積非常薄而且均勻 的薄膜。因此由C CVD沉積貴金屬薄層在許多案例中是 實用的。此外，貴金屬爲非氧化性，其應用於高品質電子 用途可容易地證明其合於經濟效果。 此外，雖然貴金屬爲導體’已發現將貴金屬與相對的 少量的氧化物作沉積時，如氧化矽或氧化鋁，沉積材料變 得高度不導電。因此，金屬如鉛，其含有較少量，例如 〇 · 1 % - 5 %的氧化物，可作爲印刷電路板之電阻器。 該材料可在印刷電路板之上沉積爲一層，且之後由印刷電 路板技術加工爲分離的電阻器。 然而由其非反應本性’貴金屬難以作鈾刻，該鈾刻係 許多印刷電路板生產方法中所須。故在印刷電路板方法中 以王水作爲金屬蝕刻劑，特別是貴金屬，。 王水係由二種已知酸製作：3份濃（1 2 Μ )鹽酸（ H C 1 )與1份濃（1 6 Μ )硝酸Η Ν 0 3。如此，鹽酸對 硝酸之克分子之比例爲9 : 4，雖然由此比例作少許變化 經濟部智慧財產局員工消費合作社印製 被不以刻當方料電 可水可触。另材刷 將王，加間。之印 中，性增時刻銅作 的制飩將刻鈾刻製 目限侵然蝕水蝕在 刻之其當鉛王於而 飩命低釋的由合從 明壽降稀好地適 ， 發用爲水良易多刻 本使。以到容許蝕 據上備。達將由作 依架製水可，以 } 在與場王液銅能12 ， 質現釋溶如不C1 4 本須稀水，則 U : 性必水王屬 ，C 2 鈾但的%金鉛或 1 侵 ，例 3 性如" 至其賣比 3 應 ，1 4 爲販之以反屬 C : 因上 1 但高金 e 6 。 業：，較貴 F 即受商 3 間，，如 ， 接在約時然面{ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明έ5 ) 路板中允許種種不同選擇的蝕刻。 (請先閱讀背面之注音？事項再填寫本頁) 蝕刻速度將取決於幾項因素，包括王水強度及溫度。 王水係以新鮮製備較佳。典型地，王水鈾刻在5 5 一 6〇 •°C範圍執行，雖然此可由其用途而作改變。 下列就形成分離的電阻器之討論假設使用鉑一爲基礎 的抵抗材料，因爲鉛/氧化矽係目前一般較佳的C C V D -沉積抵抗材料。然而，已知可用其它抵抗材料取代，包 括如即述之金屬/氧化物與導電性氧化物薄膜。同樣地， 在以下敘述的技術中銅與鉑爲基礎的保護層係選擇性地鈾 刻’已知針對種種依據本發明的導體/抵抗材料組合，有 具選擇性的鈾刻劑。 經濟部智慧財產局員工消費合作社印製 以其最簡單的形式，依據本發明之電阻器4 〇 〇僅爲 一貼片或薄層抵抗材料的細長片4 〇 1 (圖4 C及4 d ) ’在絕緣基質4 0 2上，使用之方法如將銅貼片4 〇 3接 觸在各端點以提供電阻器對電子電路之電氣連接。基質 4〇2可爲有彈性的板，如聚醯亞胺板，堅硬的環氧/纖 維玻璃板’或即使是液晶板材料。適合用於許多用途的的 基質爲有機聚合物薄膜，如聚醯亞胺，其帶有厚度約1 〇 微米或較低。於最佳化沉積參數之後，在此發現， C C V D可使用抵抗材料層以絕緣基質，如聚醯亞胺，不 須燒掉或使基質變形。直接將抵抗材料層沉積於絕緣基質 之上通常提供抵抗材料層對絕緣基質良好的黏著。通常， 該黏著係優於先前技藝之技術其使用接著劑以黏著抵抗材 料於基質上。爲形成分離的電阻器4 0 0，由C C V D將 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 --- B7 五、發明說明鈿) 一薄層的抵抗材料4 〇 1 ( 4 a )沉積在絕緣基質4 〇 2 I (請先閱讀背面之注咅？事項再填寫本頁) 上’形成圖4 a之結構。耐化學性光罩，如由摩騰（ Morton)電子材料公司以商品名Lam inar 5 0 3 8出售者， •其可抵抗王水（在鉛蝕刻之案例中），係用於抵抗材料之 暴露表面及由傳統的光成像技術作圖樣之曝光表面。通常 ’抗触劑可承受非常高酸性條件，如鍍金條件，將適合於 抵ί几王水蝕刻。暴露邰分的抵抗材料層係在由王水飩刻之 後除去’在以貴金屬爲基礎的抵抗材料之案例中，留下抵 抗材料的貼片或細長片4 〇 1 ( 4 b )以形成圖4 b之結 構。之後銅連接貼片4 〇 3可用於細長片4 0 1末端形成 圖4 c之電阻器4 〇〇。 然而較佳地，參照圖5 a - 5 c ，薄層抵抗材料貼片 4 0 1與電氣連接導電性貼片4 〇 3兩者係由光成像技術 形成°展示於圖5 a爲三層結構4 〇 9其包含絕緣基質 4 0 2 ’ 一層的抵抗材料4 〇 1 ( 5 a )，例如P t /氧 化砂’依據本發明由C C V D形成，及導電性層4 0 3 ( 5a) ’例如銅，由C C V D或另一技術（如電解電鍍） 經濟部智慧財產局員工消費合作社印製 形成。 圖5 a中結構4 〇 9可由光成像技術的二階段方法作 圖樣。在一方法中（參照圖5 b )，將以抗飩劑覆蓋導電 性材料層4 0 3 ( 5 a )，由光成像技術作抵抗圖案，且 在抗餓劑暴露面上’導電性材料層與下面抵抗材料層兩者 均作餓刻除去’（例如使用王水）以形成圖5 b之結構， 其帶有具圖案的抵抗材料貼片（4 〇 1 ( 5 b ))與具圖 -59- 本紙張尺度適用中國國家標準(CNS)^^21〇 x 297公釐) ^2018 A7 B7 五、發明說明鈐) 案的導電性材料貼片（4 〇 3 ( 5 b ))。接著，將施以 (請先閱讀背面之注意事項再填寫本頁) 第二抵抗將，作光成像，且顯影。此時，僅曝光部分的導 電性材料貼片4 0 3 ( 5 b )將由鈾刻劑蝕刻除去，鈾刻 劑將選擇性地蝕刻導電性層，但不蝕刻抵抗材料貼片，即 F e C 1 3或C u C 1 2 (在C u作爲導電性材料層且p t /氧化矽作爲電氣抵抗材料之案例中），從而製作圖4 c 之電阻器結構4 0 0。在另一供選擇的方法中（參照圖 5c)，具圖案的抵抗層將被形成，將暴露部分的導電性 材料層4 0 3 ( 5 a )蝕刻除去（例如以f e C 1 3 )，形 成另一項具圖案的抵抗層，且之後將抵抗材料層（4〇1 (5 b ))暴露面以王水蝕刻除去，以形成電氣接觸 4 0 3並形成圖4 c的電阻器結構4 0 0。由任一方法， 可用一般印刷電路的傳統光成像技術，形成分離的薄層電 阻器4 0 0。 經濟部智慧財產局員工消費合作社印製 而另一形成分離的電阻器之方法係由二層結構開始， 如展不於圖4 a ，其在絕緣基質上帶有一層的抵抗材料， 例如P t /氧化砂。使用光罩方法，抵抗材料分離的貼片 或細長片係形成在基質之上，造成如展示於圖4 b之結構 。接者，將一層導電性材料（例如銅），形成在電阻貼片 或細長片之上（例如由電解電鍍），造成如展示於圖5 b 之結構。使用另一項光罩成像，且之後將曝光部分的導電 性材料鈾刻除去，以留下導電性電氣連接貼片4 〇 3並提 供如展示於圖4 c之電阻器結構4 0 0。 當圖4 c之電阻器4 0 0可置於印刷電路板裝置表面 60 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明έ8 ) (請先閱讀背面之注咅？事項再填寫本頁) 上’在大部分案例中，電阻器將包理於複合層印刷電路板 之中（展示於圖6 )，其中電阻器4 0 0形成在絕緣基質 4 0 2 (如聚醯亞胺）上，係包理於額外的絕緣材料層 4 2 0之中’該材料如環氧/纖維玻璃預浸帶材料。 在圖9 a - g中說明者爲截面其展現電路方法，由導 電性范9 0 0 (如銅箔）開始，在其上已由c c V D或 C A C C V D沉積一層電氣抵抗材料9 〇 5，此兩層結構 展現於圖9 a。此方法所用銅箔典型地在約3至約5 〇微 米厚。 之後將光罩層9 1 〇及9 1 5用於此兩層結構之兩邊 。覆蓋抵抗材料層9 0 5之光罩9 1 0係曝光於圖樣化光 化性照射，而覆蓋導電性箔9 0 0之光罩9 1 5係毯狀一 曝光於光化性光化性。之後將光罩顯影，造成圖9 b之結 構其具圖樣化光罩層覆蓋抵抗材料層9 0 5與毯狀-曝光 光罩層9 1 5保護導電性箔。 經濟部智慧財產局員工消費合作社印製 展示如圖9 c，之後將抵抗材料層9 0 5由光罩 9 1 0已除去之面作選擇性地蝕刻。接著，剝除餘留光罩 9 1 0，9 1 5 ° 接著，如展示於圖9 d，有機積層物9 2 0係用於結 構之抵抗材料邊。積層物在後續程序保護已具圖案的抵抗 材料層9 0 5 ，且當部分的導電性箔後續被由抵抗材料層 另一邊移除時，接著支撐抵抗材料的貼片層9 0 5。 接著，將光罩層9 2 5用於導電性箔9 0 0上。此係 以具圖案的光化性照射成像並顯影，造成如展示圖9 e之 -61 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^υΐ8 Α7 i、發明說明紅 ) (請先閱讀背面之注意事項再填寫本頁) 結構。接著，將導電性箔9 Ο 0以鈾刻劑蝕刻，該蝕刻劑 可選擇性地飩刻導電性箔9 0 〇，但其不會蝕刻抵抗材料 層9 〇 5 ，留下如展示圖9 ί之結構。剝除光罩9 2 5留 下電阻器結構如圖9 g所展示。此結構可接著包理於介電 材料（未展示）中。 變化此方法時應注意，若使用之蝕刻劑係選擇性地蝕 刻電氣抵抗材料層9 0 5但不會蝕刻或僅部分鈾刻導電性 箱9〇〇，則不須使用抵抗層9 1 5 (圖9 b及9 c )。 當在此參照、蝕刻〃，此術語不僅用於此技藝一般用 途其中強的化學溶解一層材料，例如硝酸溶解鎳，但也用 方々物理除去’如雷射除去及由缺乏黏著而除去。依此，且 依據本發明觀點，相信抵抗材料，如經攙添的鎳及攙添鉛 ’由C C V D或C A C C V D沉積係爲多孔性。相信此多 孔性允許液體蝕刻劑擴散經電氣抵抗材料層，且由物理方 法破壞介於抵抗材料層與下面層之黏著。 經濟部智慧財產局員工消費合作社印製 例如參照圖9 b及9 c ，若導電性箔層9 〇 0爲銅且 抵抗材料層9 0 5爲經攙添之鉛，例如p t /氧化矽，或 經攙添之鎳，例如N 1 / P 〇 4，氯化銅可用於除去抵抗材 料層的曝光部分。氯化銅不會溶解p t或N i ，但抵抗材 料層之多孔性允許氯化銅達到下面銅。小部分的銅溶解且 電氣保護層9 0 5的曝光部分由物理脫落。此物理脫落發 生在氯化銅蝕刻下面銅層9 0 〇至任何重要的程度之前。 由相同方式，依據本發明沉積的抵抗材料之多孔性， 可由剝離飩刻除去。例如在聚醯亞胺基質上之鈾層可使用 -62- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明έο ) (請先閱讀背面之注意事項再填寫本頁) 蝕刻劑作飩刻，如前述自導電性銅基質上除去保護層’特 別是無機酸如鹽酸，硫酸及酸性氯化銅。如此，在一些方 法中，如在這以前敘述的使用一般光罩技術，在絕緣基質 ‘（如聚醯亞胺薄膜）上，可由蝕刻抵抗材料薄膜而形成分 離的電阻器。 若銅爲導電性材料層9 0 0 ，有時可有利地使用已氧 化之銅箔；氧化銅箔係商業上可獲得的。氧化銅箔之一項 優點爲稀H C 1溶液，例如1 / 2 %，可溶解氧化銅而不 會溶解零原子價銅。如此，若電氣抵抗材料層爲多孔性’ 使稀H C 1溶液可擴散通過，則可使用H C 1以作剝離飩 刻。溶解表面氧化銅將破壞介於銅箔與電氣抵抗材料層之 間的黏著。當注意展示於圖9 a — 9 g之方法，使用不會 侵襲箔的該鈾刻劑，將不再須要保護光罩層9 1 5 (圖 9 b 及 9 c )。 經濟部智慧財產局員工消費合作社印製 爲將程序階段減至最低，所用之光罩可包埋於材料中 ，如Μ 〇 r t ο η I n t e r n a t i ο n a 1' s公司的永久鈾刻抗鈾劑。之後， 若蝕刻劑不會鈾刻導體或僅部分蝕刻導體，可同時加工兩 邊。尤其是，僅電阻器材料邊光罩須要包埋且導體邊可在 最終程序階段移除。供選擇地，可選擇將光罩使用在導體 材料邊之上，以使不會被特定的用於除去電阻器材料邊光 罩的淸除劑所移除。由於特別的電阻器材料切除，可包埋 的光罩可降低容差之減低，一旦除去光罩其切除材料將剝 離。 此可由使用多孔電氣抵抗材料層而說明，如對攙添鉑 -63- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明心) 1111¾本頁) 與攙添矽，使用某些蝕刻劑，蝕刻方法爲物理脫落方法。 此係因爲電氣抵抗材料層簿片被發現於蝕刻劑缸中。因爲 這樣’可由物理方法，如過濾、沈澱、離心等，將剝離的 祗抗材料自蝕刻劑缸中分離出。這對回收昂貴的材料（如鋁） 特別方便。 爲了使抵抗材料層可由剝離技術除去由，抵抗材料層 必須通常充分多孔，使得不會溶解電氣抵抗材料之蝕刻劑 可充分地侵襲下面材料之表面，以促使界面黏著失效，且 在約2至5 分鐘之內使導電性材料脫落◦同時，在蝕刻 期間，該蝕刻劑必須基本上不侵襲下面材料例如銅箔，以 免引起過度的切除或失去機械強度（即降低可操作性）。 經濟部智慧財產局員工消費合作社印製 如此，關於前述結構，說明如圖1 0 a之導電性層 1 0 0 0 ’例如銅；中間可飩刻層1 0 0 2，例如氧化銅 ;及抵抗材料多孔層1 0 0 4，蝕刻劑可經其滲出並溶解 中間層而不須大幅地劣化的導電性層。關於圖1 〇 b係具 圖案的保護層1 0 0 6係由曝光及顯影而形成；之後，關 於圖1 0 c ，具圖案的保護層之形成，係由將保護層 1 0 0 4暴露於飩刻劑而作剝離蝕刻，其中蝕刻劑滲過多 孔保護層並侵襲中間層1 0 0 2，藉以將上面的保護層作 機械剝離。 相對於下面銅導電性層1 0 0 0，雖然由此作爲選擇 性地可蝕刻觀點而言氧化銅適合爲中間層1 0 0 2 ，其並 非中間層1 0 0 2較佳的材料。已發現抵抗材料如矽一攙 添鉛當直接沉積於銅或氧化銅上，有傾向使銅及/或氧化 -64- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7__ 五、發明說明幻) (請先閱讀背面之注意事項再填寫本頁) 銅將與抵抗材料反應而使抵抗材料之電阻不可預測。因此 較佳地，在將c C V D或C A C C V D用於抵抗材料之前 ’將中間層1 〇 〇 2塗佈於導電性箔層1 0 0 0之上，如 •此使該材料不會允許導電性材料自箔層1 〇 〇 〇擴散至抵 抗材料層1 〇 〇 4。 經濟部智慧財產局員工消費合作社印製 中間層1 0 0 2材料之需求必須使材料可由蝕刻劑作 蝕刻，該蝕刻劑可充分地劣化中間層而剝離抵抗材料層 1〇〇 4。宜使蝕刻劑對導電性層1 〇 〇 〇作最小程度之 劣化或不會劣化。例如，可能存在一化學藥品其可鈾刻中 間層但不會與導電性層1 〇 〇 〇反應。然而，即使若化學 藥品可同時劣化中間層1 〇 〇 2形成材料與導電性層 1〇0 0形成材料，通常仍可能由控制鈾刻條件包括時間 而使用該蝕刻劑，使中間層1 0 0 2劣化而基本上不會劣 化導電性層1 0 0 0。例如若導電性層1 0 0 0爲銅且中 間層1 0 0 2爲鎳、氯化銅，其爲可對鎳與銅作適當地劣 化的蝕刻劑，假設可控制蝕刻條件使非常薄的鎳層基本上 劣化但相對的較厚的銅層不會大幅地劣化。此外，中間層 1〇0 2之材料必須容許在介於導電性層1 〇 〇 0與抵抗 材料層間保持良好的電氣接觸。 中間層1 0 0 2材料之一項選擇爲金屬’如鎳’其可 藉由在導電性層之間提供障礙（例如銅），防止介於銅•與 抵抗材料層1 0 0 4之間的相互作用。鎳可沉積於銅1上’ 例如由電鍍。典型地，鎳中間層將介於約2與約6微米’ 雖然厚度並不被認爲是特別緊要的。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ - 492018 Α7 Β7 五、發明說明έ3 ) (請先閱讀背面之注意事項再填寫本頁) 中間層1 0 0 2材料之另一項選擇爲陶瓷，如氧化砂 或另一金屬或準金屬氧化物。該中間層可如前述由 C C V D沉積，在沉積抵抗材料層1 〇 〇 4之前。當大部 ’分陶瓷材料，如氧化矽，爲電氣絕緣（介電），若沉積充 分地薄層，例如平均介於約1 5與約5 0奈米，介電材料 仍可作爲中間障礙層1 0 0 2而不大幅地中斷介於導電性 層1 0 0 0與保護層1 0 0 4間之電氣接觸。（當討論中 間層厚度，所討論者爲中數厚度或平均厚度。而厚度典型 地由不同位置而變化，該變化係取決於如基質粗糙度與沉 積條件因素）。淨效果爲可蝕刻，具電氣洩漏之中間層可 作爲有效的組成緩衝。 若使用氧化矽作爲中間層，其適合的鈾刻劑包含二氟 化氫銨，氟硼酸及其混合物。若使用氧化矽作爲中間層， 其特別適合的鈾刻劑爲1 · 7 w t %二氟化氫銨之水性溶 液，及1 · 0 5 w t %氟硼酸之水性溶液。可將其它材料 加入此二成分之混合物。 經濟部智慧財產局員工消費合作社印製 在氧化矽之案例中，宜有介於電阻器與導體間奈米級 點的直接接觸，其係由充分地奈米級-多孔或有缺陷的塗 層所賦予。該接觸之尺寸可以是1 一 1 Ο Ο η η且佔面積 的0 · 0 5 %至1 0 %，因此允許電阻器具有即使低至微 米級之尺寸解析度而仍提供極佳電傳達。此仍可充分地降 低材料相互作用。供選擇地，可使用差的絕緣體，半導電 性或導電性複合陶瓷或聚合物材料，在此案例中這些須用 較厚之厚度。此外，據此，基質表面愈粗糙，中間層愈厚 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 66- 492018 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明“) ’可能因爲較粗f造基質表面傾向於製造較多孔的中間層塗 層。即，相信基質表面愈粗糙，中間物塗層可製造愈高數 量的針孔眼，而經由針孔眼可保持電氣接觸。 ' 其它可使用作爲中間層之氧化物包含氧化鋅、氧化緦 、及氧化鎢。各個這些氧化物由c c V D作沉積可使用前 述鋅，緦及鎢前驅物。各個這些氧化物可由C C V D沉積 於銅基質上，在充分地低溫下而使銅不會氧化。各個這些 氧化物可使用相對低的成本。 氧化鋅尤其是可靠的中間層材料電性半導體。因此， 可在介於導電性金屬（例如銅）與電阻器之間提供較佳電 氣連續。可將氧化鋅（及其它氧化物）作攙添以增加電氣 連續。此外，可以鹽酸鈾刻氧化鋅。 可用強鹼，如K〇Η，鈾刻氧化緦與氧化鎢。 本發明將由特定的實施例作較詳細的敘述。nmjti 以CCVD在聚醯亞胺上沉積一層的P t/S i〇2抵 抗材料，使用之沉積條件如下： 溶液製備·· 1 · 2 3 g P t (COD) 2 5 0 m 1甲苯 0 · 4 3 g TE0S(l*5wt% S i在甲苯中） 1 5 0 g丙烷 沉積條件： 溶液流量：3 ml/min (請先閱讀背面之注音3事項再填寫本頁) - -線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -67- 492018 A7 B7 五、發明說明鈿 ) 請 先 閱 讀 背 之 注 意 事 項 再 填 寫 本 頁V. Description of the invention 2) C. Please read the back of the page first, and then fill in the tribute) Typically, it reaches about 5 wt%. In general, it is better to use the concentrated and concentrated form of lotus root and treatment to minimize the cost and minimize the amount of flammable liquid. At the same time, stability, especially low temperature stability, for example, you must consider as low as •-2 0 ° C In order to avoid precipitation of excessively concentrated solution. During deposition, the precursor solution is typically more diluted, for example in propane, diluted to a concentration (total precursor chemicals) of between about 0. 005 and about 1.0 Wt%, preferably between About 0.5 · 0.5 and about 1.0 wt%, and more preferably not more than about 0.6 wt%. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. One of the most important metals that can be deposited by CAC CVD is nickel, which is deposited in additive or non-additive form. Relative to conductive metals such as copper, wires are inexpensive and can be selectively etched. An important precursor for the deposition of zero primary nickel from C A C C V D is nickel nitrate. Nickel can be deposited from an aqueous ammonia solution ψ of nickel nitrate. However, as mentioned earlier, it is advisable to deposit from liquids at near supercritical conditions. To this end, advantageous carriers of nickel nitrate include liquefied ammonia or liquefied nitrogen compounds (N2O). Nitrogen oxides can be liquefied by pressurizing to 700-800 p s 1. Ammonia can be liquefied by pressurization and / or low temperature. Regardless of whether the carrier is liquefied ammonia or liquefied nitrogen oxides, it has been found to be advantageous to add a small portion of 7jC, ie up to about 40 wt%, preferably between about 2 to about 20 wt%, (this liquefied ammonia or liquefied Nitrogen oxides include equilibrium, between about 60 and about 100 W t%). Water will raise the critical point of super liquefied ammonia or liquefied nitrogen oxides. This makes it easy to operate 'sufficiently below the supercritical point without changes in viscosity and density. In addition, the added water reduces the instability of the solution. (However, it is important to note that in some cases deposition may be performed in liquefied ammonia or liquefied nitrogen oxides without water). The nickel deposit solution-55- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 _ B7 V. Description of the invention such as) (Please read the note on the back? Matters before filling in this Page) The nickel precursor and any nickel dopant precursor systems are typically present at low concentrations, ie, from about 0.0001 wt% to about 2.5 wt%. Generally preferred nickel dopants are nickel phosphorus and / or nickel phosphorus oxides, such as nickel phosphate. It is believed that when a phosphorus-containing precursor such as phosphoric acid is used, the main dopant species is nickel phosphate. The precursor solution of water co-solvent with liquefied ammonia or N 2 0 carrier has the advantage that there is no carbon that can cause carbon deposition. When a nickel nitrate precursor solution is prepared in liquefied ammonia, nickel nitrate can be suitably pre-dissolved (with any dopant precursor) in an ammonium hydroxide solution, and this solution is then mixed to liquefy the ammonia. The resistive materials printed here by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs can be manufactured as resistors, which are packaged in resistors, or as the resistance on the surface of printed circuit boards in integrated circuits, or for other electronic purposes . This system is usually completed by using a photomask which is used to form a resist pattern on the resist material layer and use an appropriate etchant to remove the area of the resist material that is not covered by the resist. For the metal / oxide resist material layer, the etchant is selected based on the metal composition of the resist material. Typically the etchant is an acid or a Lewis acid, such as FeCI3 or CuCI2 to copper. Nitric acid and other inorganic acids (such as sulfuric acid, hydrochloric acid, and phosphoric acid) can be used to etch nickel. Various other metals can be deposited like conductive oxides. Aqua regia can be used to etch precious metals such as platinum. Aqua regia is a mixture of extremely aggressive acids. Here it is used to etch metals, especially precious metals such as lead and gold. Au can also be etched in a potassium iodide / iodine (K I / I 2) solution. Because C C V D uses flames, it tends to produce oxides. Only low-reactive metals, that is, those with a low oxygen potential, are easily deposited as metals, rather than deposited as oxides. Precious metals such as aluminum and gold are the easiest to deposit. Of course this -56- This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 _____B7 V. Description of invention k) (Please read the back first (Please note before filling out this page) These metals are very expensive and c C VD can be advantageously used to deposit very thin and uniform films. Therefore depositing a thin layer of precious metal by C CVD is practical in many cases. In addition, precious metals are non-oxidizing, and their use in high-quality electronic applications can easily prove their economic benefits. In addition, although the noble metal is a conductor ', it has been found that when the noble metal is deposited with a relatively small amount of an oxide, such as silicon oxide or aluminum oxide, the deposition material becomes highly non-conductive. Therefore, metals such as lead, which contain a relatively small amount, such as 0.1 to 5% of oxides, can be used as resistors for printed circuit boards. This material can be deposited as a layer on a printed circuit board and later processed into discrete resistors by printed circuit board technology. However, its non-reactive nature 'precious metals are difficult to make uranium engraving, which is required in many printed circuit board production methods. Therefore, in the printed circuit board method, aqua regia is used as the metal etchant, especially the precious metal. The aqua regia system is made from two known acids: 3 parts concentrated (12 M) hydrochloric acid (HC1) and 1 part concentrated (16 M) nitrate nitrate Ν 03. In this way, the molar ratio of hydrochloric acid to nitric acid is 9: 4, although this ratio has changed slightly. It is printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and is not touched by electricity. Another material brush will be king, plus time. In the seal, the copper made of plutonium at the time of sexual increase will be engraved with uranium. The limit of erosion will be eroded. The water will be etched when the lead is king. Make a lot of books for Shui Liangyi. To allow for corrosion. Tat will be made of water according to the frame, with} in the field king liquid copper energy12, if the quality is released, if C1 4 must be dilute in water, then U: the king of water, C 2 uranium but the gold and lead Or 1 invasion, such as 3, such as " to its selling ratio of 3 should be, 1 4 is the opposite of the seller C: Because of 1 but high gold e 6. Industry :, the more expensive F is the business 3, such as, when you meet the contract {This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 492018 A7 _ B7 V. Description of the invention 5 ) Various etchings are allowed in the board. (Please read the note on the back? Matters before filling out this page) The etching speed will depend on several factors, including aqua regia strength and temperature. Aqua regia is better prepared fresh. Typically, aqua regia engraving is performed in the range of 5 5 to 60 ° C, although this can be changed by its use. The following discussion of forming discrete resistors assumes the use of a platinum-based resistance material because lead / silicon oxide systems are currently generally the better C C V D -deposition resistance materials. However, it is known that it can be replaced with other resistant materials, including metal / oxide and conductive oxide films as mentioned. Similarly, in the technology described below, copper and platinum-based protective layer systems for selective uranium etching 'are known to have selective uranium etchants for various conductor / resistance material combinations according to the present invention. Printed in its simplest form by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the resistor 400 according to the present invention is only an elongated sheet of a patch or a thin layer of resistant material 401 (Figures 4C and 4d) 'On the insulating substrate 402, use a method such as contacting copper patches 403 at each end to provide a resistor-to-electronic circuit electrical connection. The substrate 40 may be a flexible sheet such as a polyimide sheet, a rigid epoxy / fiber glass sheet 'or even a liquid crystal panel material. Suitable substrates for many applications are organic polymer films, such as polyimide, with a thickness of about 10 microns or less. After optimizing the deposition parameters, it was found here that C C V D can use a layer of resistive material to insulate the substrate, such as polyimide, without burning or deforming the substrate. Depositing a layer of resistive material directly on top of the insulating substrate generally provides good adhesion of the layer of resistive material to the insulating substrate. In general, this adhesion system is superior to the prior art technique in that it uses an adhesive to adhere the resistant material to the substrate. In order to form a separate resistor 400, the paper size is adapted to Chinese National Standard (CNS) A4 (210 X 297 mm) by CCVD. 492018 A7 --- B7 V. Description of the invention 钿) A thin layer of resistive material 4 〇1 (4 a) is deposited on the insulating substrate 4 〇 2 I (please read the note on the back? Matters before filling out this page) to form the structure of Figure 4 a. Chemically resistant photomasks, as sold by Morton Electronic Materials under the trade name Lam inar 5 0 3 8 • are resistant to aqua regia (in the case of lead etching) and are used to resist material exposure Surfaces and exposed surfaces patterned by conventional light imaging techniques. Generally, the anti-contact agent can withstand very high acidic conditions, such as gold plating conditions, and it will be suitable for etching with several aqua regias. The exposed layer of resistive material is removed after being engraved by aqua regia. In the case of a noble metal-based resistive material, a patch or elongated sheet of resistive material is left 401 (4 b) to form FIG. 4 b structure. The copper connection patch 403 can then be used to form the end of the elongated chip 401. The resistor 4 in FIG. 4c. However, preferably, referring to FIGS. 5 a-5 c, the thin-layer resistive material patch 401 and the electrically-connected conductive patch 403 are both formed by photoimaging technology. Illustrated in FIG. 5a is a three-layer structure 4 009 includes an insulating matrix 4 0 2 'a layer of resistive material 4 0 1 (5 a), such as P t / sand oxide' according to the present invention, formed by CCVD, and a conductive layer 4 0 3 (5a) 'such as copper Printed by CCVD or another technology (such as electrolytic plating) printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The structure 409 in Fig. 5a can be patterned by a two-stage method of light imaging technology. In one method (refer to FIG. 5 b), a conductive material layer 4 0 3 (5 a) is covered with an anti-magnetizing agent, a resist pattern is formed by a photoimaging technique, and a conductive material layer is exposed on the anti-hungry agent exposed surface. Both the lower layer of resistive material and the lower resistive layer are removed (for example, using aqua regia) to form the structure of FIG. 5b, which is provided with a patterned resistive material patch (4 〇1 (5b)) and a pattern- 59- This paper size applies the Chinese National Standard (CNS) ^^ 21〇x 297 mm) ^ 2018 A7 B7 V. Description of the Invention 钤) The conductive material patch (4 0 3 (5 b)). Next, you will apply (please read the precautions on the back before filling out this page) the second resistance will be used for light imaging and development. At this time, only the exposed part of the conductive material patch 4 0 3 (5 b) will be etched away by the uranium etchant. The uranium etchant will selectively etch the conductive layer, but it will not etch the resist material patch, that is, F e C 1 3 or Cu C 1 2 (in the case of Cu as the conductive material layer and pt / silicon oxide as the electrical resistance material), thereby making the resistor structure of FIG. 4 c 4 0 0. In another alternative method (refer to FIG. 5c), a patterned resistive layer is formed, and the exposed conductive material layer 4 0 3 (5 a) is etched away (eg, fe C 1 3) to form Another patterned resistive layer, and then the exposed surface of the resistive material layer (4〇1 (5b)) was removed by aqua regia to form electrical contact 4 0 3 and form the resistor structure 4 c of FIG. 4 c 0. By either method, a conventional thin-film resistor 400 can be formed using conventional photo-imaging techniques of a general printed circuit. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and another method of forming a separate resistor starts with a two-layer structure, as shown in Figure 4a, which has a layer of resistive material on the insulating substrate, such as P t / Oxidized sand. Using the photomask method, a patch or elongated sheet that resists material separation is formed on the substrate, resulting in the structure as shown in Figure 4b. Then, a layer of conductive material (such as copper) is formed on the resistive patch or elongated sheet (such as by electrolytic plating), resulting in the structure as shown in Fig. 5b. Imaging was performed using another photomask, and then the exposed portion of the conductive material, uranium, was etched away to leave a conductive electrical connection patch 4 03 and provide a resistor structure 4 0 0 as shown in FIG. 4 c. When the resistor 4 0 0 in Figure 4c can be placed on the surface of the printed circuit board device 60, the paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 _ B7 V. Description of the invention 8) (Please First read the note on the back? Matters before filling out this page) On 'In most cases, the resistor will be packaged in a composite printed circuit board (shown in Figure 6), where the resistor 4 0 0 is formed in the insulation The substrate 4 02 (such as polyimide) is encapsulated in an additional layer of insulating material 4 2 0 'this material is an epoxy / fiberglass prepreg material. Illustrated in Figures 9a-g are cross-sections showing the circuit method, starting with a conductivity range of 900 (such as copper foil), on which a layer of electrical resistance material 905 has been deposited by cc VD or CACCVD. The two The layer structure is shown in Figure 9a. The copper foil used in this method is typically about 3 to about 50 microns thick. Photomask layers 9 10 and 9 1 5 are then used on both sides of the two-layer structure. The mask 9 1 0 covering the resist material layer 9 0 5 is exposed to patterned actinic radiation, and the mask 9 1 5 covering the conductive foil 9 0 5 is blanket-shaped. 1 is exposed to actinic actinicity. Thereafter, the photomask is developed, so that the patterned photomask layer of FIG. 9b is covered with a resist material layer 905 and a blanket-exposure photomask layer 9 1 5 to protect the conductive foil. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The display is shown in Figure 9c. After that, the resist material layer 9 05 is selectively etched from the removed surface of the mask 9 10. Next, the remaining photomask 9 1 0, 9 1 5 ° is peeled off. Then, as shown in FIG. 9 d, the organic laminate 9 2 0 is used as the structure's resist material edge. The laminate protects the patterned resistive material layer 905 in a subsequent procedure, and when a portion of the conductive foil is subsequently removed from the other side of the resistive material layer, the patch layer 905 of the resistive material is then supported. Next, a photomask layer 9 2 5 is applied on the conductive foil 900. This is a patterned actinic illumination for imaging and development, as shown in Figure 9 e-61-This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) ^ υΐ 8 Α7 i. Description of the invention Red) (Please read the notes on the back before filling out this page) Structure. Next, the conductive foil 9 0 0 is etched with a uranium etchant, which can selectively etch the conductive foil 9 0 0, but it will not etch the resistive material layer 9 0 5, leaving as shown in FIG. 9 ί The structure. Strip the photomask 9 2 5 and leave the resistor structure as shown in Figure 9g. This structure can then be encapsulated in a dielectric material (not shown). When changing this method, it should be noted that if the etchant used is to selectively etch the electrically resistive material layer 905 but does not etch or only partially etch the conductive box 900, then the resistive layer 9 1 5 ( Figures 9b and 9c). When referring to etched rhenium, the term is not only used in this technique in general for the strong chemical dissolution of a layer of material, such as nitric acid to dissolve nickel, but also physical removal 'such as laser removal and removal by lack of adhesion. Accordingly, and in accordance with the viewpoint of the present invention, it is believed that resistive materials, such as nickel and tin lead, are made porous by C C V D or C A C C V D. It is believed that this porosity allows the liquid etchant to diffuse through the electrically resistive material layer and physically destroys the adhesion between the resistive material layer and the underlying layer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, for example, referring to Figures 9b and 9c. If the conductive foil layer 900 is copper and the resistive material layer 905 is added lead, such as pt / silicon oxide, or With the addition of nickel, such as N1 / P04, copper chloride can be used to remove the exposed portions of the resist material layer. Copper chloride does not dissolve p t or Ni, but the porosity of the resistance material layer allows copper chloride to reach the underlying copper. A small part of the copper was dissolved and the exposed part of the electrical protective layer 905 was physically peeled off. This physical exfoliation occurred before the copper layer under the copper chloride etch was 900 to any significant extent. In the same way, the porosity of the resist material deposited according to the present invention can be removed by peeling and engraving. For example, a uranium layer on a polyimide substrate can be used. -62- This paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7 V. Description of the invention (Please read the Note: Please fill in this page again.) Etchant is used for engraving, and the protective layer is removed from the conductive copper substrate as described above, especially inorganic acids such as hydrochloric acid, sulfuric acid and acid copper chloride. Thus, in some methods, as described previously, using a general photomask technique, a separate resistor can be formed on an insulating substrate ′ (such as a polyimide film) by etching a thin film of a resist material. If copper is a conductive material layer 900, it is sometimes advantageous to use an oxidized copper foil; copper oxide foils are commercially available. One advantage of copper oxide foil is that a dilute H C 1 solution, such as 1/2%, can dissolve copper oxide without dissolving zero atomic valence copper. In this way, if the electrically resistive material layer is porous' so that the dilute H C 1 solution can diffuse through, then H C 1 can be used for peeling engraving. Dissolving the surface copper oxide will break the adhesion between the copper foil and the layer of electrical resistance material. When paying attention to the method shown in Figs. 9a-9g, using the uranium etching agent that will not invade the foil, it is no longer necessary to protect the mask layer 9 1 5 (Figs. 9b and 9c). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to minimize the process stage, the photomask used can be embedded in the material, such as M 〇 rt ο η I nternati ο na 1's company ’s permanent uranium engraving anti-uranium agent . Later, if the etchant does not etch the conductor or only partially etch the conductor, both sides can be processed simultaneously. In particular, only the resistor material edge mask needs to be embedded and the conductor edge can be removed at the final process stage. Alternatively, a photomask may be used over the edge of the conductive material so that it is not removed by a specific scavenger used to remove the photomask of the resistor material. Due to the special resistor material removal, the embeddable photomask can reduce the tolerance and the cut-off material will be peeled off once the photomask is removed. This can be explained by the use of a layer of porous electrical resistance material, such as Titian Platinum-63- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 _ B7 V. Inventive Notes) 1111 ¾ Page) and Si-Si, using some etchants, the etching method is a physical exfoliation method. This is because a sheet of electrically resistive material was found in the etchant tank. Because in this way, the peeled anti-refractory material can be separated from the etchant tank by physical methods such as filtration, sedimentation, centrifugation, and the like. This is especially convenient for recycling expensive materials such as aluminum. In order for the resistive material layer to be removed by a lift-off technique, the resistive material layer must usually be sufficiently porous so that the etchant that does not dissolve the electrically resistive material can sufficiently attack the surface of the underlying material to promote interfacial adhesion failure, and at about 2 to 5 The conductive material is peeled off within minutes. At the same time, during the etching, the etchant must not substantially attack the underlying materials such as copper foil, so as not to cause excessive ablation or loss of mechanical strength (that is, reduced operability). This is printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Regarding the aforementioned structure, the conductive layer 1 0 0 0 'such as copper; as shown in Fig. 10 a; the middle etchable layer 1 02 2 such as copper oxide; and resistance The porous layer of material 104 is an electrically conductive layer through which an etchant can ooze and dissolve the intermediate layer without significant degradation. With regard to FIG. 10b, the patterned protective layer 1006 is formed by exposure and development. After that, with regard to FIG. 10c, the patterned protective layer is formed by exposing the protective layer 1104 to The etchant is used for peeling etching, wherein the etchant penetrates through the porous protective layer and invades the intermediate layer 1002, thereby mechanically peeling the upper protective layer. Relative to the underlying copper conductive layer 100, although copper oxide is suitable as the intermediate layer 1002 from the viewpoint of selective etchability, it is not a preferable material for the intermediate layer 1002. It has been found that resistant materials such as silicon and lead, when deposited directly on copper or copper oxide, tend to make copper and / or oxidize -64- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 492018 A7 B7__ V. Invention Description (Please read the notes on the back before filling out this page) Copper will react with the resistive material and make the resistance of the resistive material unpredictable. It is therefore preferred to 'coat the intermediate layer 1000 on top of the conductive foil layer 1000 before applying c CVD or CACCVD to the resistive material, as this will prevent the material from allowing conductive materials Diffusion from foil layer 1000 to resist material layer 1000. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the material of the intermediate layer 1002 needs to be able to be etched by an etchant, which can sufficiently degrade the intermediate layer and peel off the resistant material layer 104. It is desirable that the etchant should minimize or not deteriorate the conductive layer 1000. For example, there may be a chemical that can etch the interlayer but does not react with the conductive layer 1000. However, even if chemicals can simultaneously degrade the intermediate layer 1000 forming material and the conductive layer 1000 forming material at the same time, it is still possible to use the etchant by controlling the uranium etching conditions including time to make the intermediate layer 100 2 Degrades without substantially degrading the conductive layer 1 0 0 0. For example, if the conductive layer 100 is copper and the intermediate layer 100 2 is nickel or copper chloride, it is an etchant that can appropriately degrade nickel and copper. It is assumed that the etching conditions can be controlled to make very thin nickel. The layer is substantially degraded but the relatively thicker copper layer is not significantly degraded. In addition, the material of the intermediate layer 1002 must allow good electrical contact to be maintained between the conductive layer 1000 and the resist material layer. One option for the material of the intermediate layer 1 0 0 2 is a metal such as nickel, which can provide a barrier (such as copper) between the conductive layers to prevent the interaction. Nickel can be deposited on the copper 1 ', for example by electroplating. Typically, the nickel intermediate layer will be between about 2 and about 6 microns ' although the thickness is not considered particularly critical. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) _-492018 Α7 Β7 V. Description of invention 3) (Please read the precautions on the back before filling this page) Middle layer 1 0 0 2 Material Another option is ceramic, such as oxidized sand or another metal or metalloid oxide. This intermediate layer may be deposited from C C V D as before, before the resist material layer 1 0 4 is deposited. When most of the ceramic materials, such as silicon oxide, are electrically insulating (dielectric), if a sufficiently thin layer is deposited, for example between about 15 and about 50 nanometers on average, the dielectric material can still serve as an intermediate barrier layer 1 0 0 2 without significantly interrupting the electrical contact between the conductive layer 1 0 0 0 and the protective layer 1 0 4. (When discussing interlayer thickness, the person in question is the median or average thickness. The thickness typically varies from location to location, depending on factors such as substrate roughness and deposition conditions). The net effect is etchable, and the intermediate layer with electrical leakage serves as an effective composition buffer. If silicon oxide is used as the intermediate layer, suitable etchants for uranium include ammonium difluoride, fluoboric acid, and mixtures thereof. If silicon oxide is used as the intermediate layer, its particularly suitable uranium engraving agent is an aqueous solution of 1.7 wt% ammonium bifluoride and an aqueous solution of 1.05 wt% fluoboric acid. Other materials can be added to the mixture of these two ingredients. In the case of silicon oxide, the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs should have direct contact between the nanometer point between the resistor and the conductor, which is composed of a sufficiently nanometer-porous or defective coating. Given by. The size of the contact can be 1 to 100 η η and 0. 05% to 10% of the area, thus allowing the resistor to provide excellent electrical communication even with dimensional resolution down to the micrometer level. This still sufficiently reduces material interactions. Alternatively, poor insulators, semi-conductive or conductive composite ceramic or polymer materials can be used, in which case thicker thicknesses are required. In addition, according to this, the rougher the surface of the substrate and the thicker the middle layer, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 66- 492018 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The description of the invention ") may be because the rougher surface of the substrate tends to make a more porous interlayer coating. That is, it is believed that the rougher the surface of the substrate, the higher the number of pinholes that the intermediate coating can produce, and via the pinhole Eyes can maintain electrical contact. 'Other oxides that can be used as intermediate layers include zinc oxide, hafnium oxide, and tungsten oxide. Each of these oxides is deposited by cc VD. The foregoing zinc, hafnium, and tungsten precursors can be used. Each of these oxides Materials can be deposited on a copper substrate by CCVD, so that copper does not oxidize at a sufficiently low temperature. Each of these oxides can be used at a relatively low cost. Zinc oxide is particularly a reliable interlayer material for electrical semiconductors. Therefore, it can be used in dielectrics Provide better electrical continuity between conductive metals (such as copper) and resistors. Zinc oxide (and other oxides) can be added to increase electrical continuity In addition, zinc oxide can be etched with uranium hydrochloride. Strong bases such as K〇Η, uranium oxide can be etched with tungsten and tungsten oxide. The present invention will be described in more detail by specific examples. Nmjti deposits a layer of polyimide by CCVD P t / S i〇2 resistive material, the deposition conditions used are as follows: Solution preparation ·· 1 · 2 3 g P t (COD) 2 5 0 m 1 toluene 0 · 4 3 g TE0S (l * 5wt% S i In toluene) 150 g of propane deposition conditions: solution flow rate: 3 ml / min (please read the note 3 on the back before filling out this page)--line · This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) -67- 492018 A7 B7 V. Description of Invention 钿) Please read the precautions on the back before filling in this page

沉積時間：就5〃 X 6〃基質爲〜18 min 通過數：6 沉積溫度 500°CDeposition time: For 5〃 X 6〃 substrate is ~ 18 min Passes: 6 Deposition temperature 500 ° C

• 凡瑞克（Variac) 3.0A 頂端氧流量：〜2900 ml/mm 由上述沉積條件所得之試樣產生之電阻値約1 7歐姆 每平方。 此係含有2 · 5 w t % S i〇2的6 5 %濃縮溶液之實 施例。可改變的變因包括成比例地加入P t ( C 0 D )及 T E〇S之量其可使達到濃度1 0 0 %溶液（例如 1.89gPt (C〇D)及〇.65gTE〇S( 1 . 5 W t % S i ))，及加入TE〇S之量其可改變生 成的S i〇2重量％ (在此典型地爲〇 . 5 — 5wt%)。 實施例2 敏感基質 完成，且 之上。此 罩內而此 此加外罩 質，如展 流過經針 氫流流經 如9 0 — 沉積於氧化 V D技術而 沉積於N i 嘴置於一外 焰。之後將 空氣到達基 將可燃溶液 經頂端，且 或還原氣（ 經濟部智慧財產局員工消費合作社印製 在某些案例中。須要將某些材料 上而不氧化基質。此可使用CA C C 一實施例係將介電化合物S r T i〇2 沉積使用傳統的C C V D噴嘴，該噴 外罩可供應隋性或還原氣體環繞此火 的噴嘴覆蓋以石英管以防止在沉積中 示於圖8。就此C A C C V D火焰， (如在C C V D方法中），氧氣流流 前導管。高流量的隋性（如氬或氮） 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -68- 492018• Variac 3.0A tip oxygen flow: ~ 2900 ml / mm The resistance generated by the sample obtained from the above deposition conditions is approximately 17 ohms per square. This is an example of a 65% concentrated solution containing 2.5 wt% Si02. Modifiable variables include the proportional addition of P t (C 0 D) and TE〇S which can reach a concentration of 100% solution (such as 1.89 g Pt (CO) and 0.65 g TE〇S (1 5 W t% S i)), and the amount of TE 0S added can change the Si 2 wt% (typically 0.5-5 wt% here). Example 2 Sensitive substrate is complete, and on. Inside this hood and then with additional lining materials, such as flowing through the needle, hydrogen flowing through, such as 90 — deposited on the oxidized VD technology and deposited on the Ni mouth and placed in an external flame. After that, the air reaches the base and the flammable solution passes through the top, or the reducing gas (printed in some cases by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy. Some materials need to be on without oxidizing the substrate. This can be implemented using CA CC For example, the dielectric compound S r T i〇2 is deposited using a conventional CCVD nozzle, the spray cover can supply inert or reducing gas around the fire nozzle is covered with a quartz tube to prevent the deposition shown in Figure 8. CACCVD for this Flame, (as in the CCVD method), oxygen flow before the duct. High flow inertness (such as argon or nitrogen) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -68- 492018

五、發明說明釦) 9 9 · 5 %氬/ 1 0 - 〇 · 5 %氫）流經外罩而環繞火焰 。針對非常小的s式樣，通以隋性或還原氣體之旁臂爲石英 管之一邰分，以允許加熱試樣於沉積後在控制氣壓下冷卻 ，且因此防止在此點氧化。此方法已可將s r τ i〇3沉積 於N 1上而不會形成N i 0或不會沉積碳（就E D χ及 X R D分析所顯示）。早期實驗已顯示使用具低碳沉積可 能的溶劑如甲醇，比使用甲苯爲佳。當使用甲苯，碳將沉 積於基質上。理想的程序參數如下。 溶液製備：0.82g Sr 2 —乙基己酸鹽（1.5 wt % Sr在甲 苯中） 〇.73g Τι - di - 1 苯中） 17 ml甲醇 l〇〇g丙烷 acac(0.94 wt % Τι 在甲 (請先閱讀背面之注意事項再填寫本頁) 訂 沉積條件 溶液流量： 沉積時間： 沉積溫度 2ml/min 15 min。（已變化 10 — 15 min) 〜950°C (已變化 800 — 1〇50°C ) 經濟部智慧財產局員工消費合作社印製 凡瑞克（Variac)1.9 A(已變化 1.9 — 2.25 A) 前導氫流量：〜1926 ml/min(已低至550ml/m) 頂端氧流量：〜Π00 ml/min(已變化500 — 2322 ml/m) 混合還原氣體：0.5 - 10%氫/平衡氬 還原氣體流量：58 1/ηπη 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_的- 492018 A7 B7 五 使用敘述於圖7之裝置，使用〇.760g N 1 1^〇3)112〇與〇.3〇2 113?〇4在4〇〇1111 M N Η 4〇Η中之溶液，將磷酸鹽一攙添鎳薄膜沉積於 2 0 0 T A Β - Ε聚醯亞胺基質之上。將溶液流經2 2 經濟部智慧財產局員工消費合作社印製 g a ·不鏽鋼針頭 0 D )熔合氧化石夕 流動速率爲〇 . 5 ’速率爲1 · 2 0 ’速率爲7 5 6 s 速率爲1 . 4〇1 爲 2 8 · 1 1 p m 開始。通常，必須 。之後將Μ氣流恢 燃燒前導火源或點 度爲 5 0 0 °C。一 m m作光柵2〇〃 區域爲3 . 5 〃乘 1 2分鐘。 沉積磷酸鹽- ，使用 2 2 // m I D 毛細插管（3 m m長 〇sccm。將氫氣 1 p m。將氫氣通經 ccm。將氧氣體通 P m。將氬氣體通經 。所有流體均在對火 降低火焰正面之氬氣 復其起始設定。一旦 火源。高於沉積點約 旦作水平掃瞄，將基 / m i η且階段爲〇 3.5〃 。此光柵動 〔0.0 0 6 〃 )在頂端7 2 通經環繞管7 環繞管7 4 4 經環繞管7 5 外管7 6 8， 焰作人工點火 流以對內噴嘴 點火，不須再 1 πι m處之热 質於噴嘴項圈 •0 6 2 5 〃 作所須的總時 3 8 运境 2， 速率 之前 點火 保持 體溫 前2 越過 間爲 (請先閱讀背面之注意事項再填寫本頁} ·_% 線 攙添鎳層之直線型電阻丨i 5 Ω 爲作比較，以不含磷酸之溶液重覆作沉積。鎳層之電 阻爲5 Ω / 1 η。Fifth, the invention description buckle) 9 95% argon / 10-0 · 5% hydrogen) flowed through the cover and surrounded the flame. For very small s patterns, the side arms of inert or reducing gas are used as a part of the quartz tube to allow the heated sample to cool under controlled air pressure after deposition, and thus prevent oxidation at this point. This method has been able to deposit s r τ i〇3 on N 1 without forming N i 0 or carbon (as shown by E D χ and X R D analysis). Early experiments have shown that the use of solvents with a low carbon deposition potential, such as methanol, is better than the use of toluene. When toluene is used, carbon will deposit on the substrate. The ideal program parameters are as follows. Solution preparation: 0.82g Sr 2 -ethylhexanoate (1.5 wt% Sr in toluene) 0.73g Ti-di-1 benzene) 17 ml methanol 100g propane acac (0.94 wt% Ti in a ( Please read the precautions on the back before filling this page) Set the deposition conditions Solution flow rate: Deposition time: Deposition temperature 2ml / min 15 min. (Changed 10 — 15 min) ~ 950 ° C (Changed 800 — 1050 ° C) Printed Variac 1.9 A (changed 1.9 — 2.25 A) by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Π00 ml / min (already changed 500 — 2322 ml / m) Mixed reducing gas: 0.5-10% hydrogen / equilibrium argon reducing gas flow: 58 1 / ηπη This paper size applies to China National Standard (CNS) A4 (210 X 297) (Mm) _'s-492018 A7 B7 Five uses the device described in Figure 7, using 0.760g N 1 1 ^ 〇3) 112〇 and 0.32 02 113-〇4 at 4〇01111 MN Η 4〇 The solution was mixed with a phosphate-added nickel film on a 200 TA Β-Ε polyimide substrate. Flow the solution through 2 2 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs · Stainless steel needles 0 D) The flow rate of fused oxide stone is 0.5 '1 is 2 · 2 0' is 7 5 6 s is 1 4〇1 starts at 2 8 · 1 1 pm. Usually, you must. Afterwards, the M gas flow was restored to a leading ignition source or point of 500 ° C. A 20 m area of a grating is 3.5 mm by 12 minutes. To deposit phosphate, use a 2 2 // m ID capillary cannula (3 mm long 0 sccm. Pass hydrogen 1 pm. Pass hydrogen through ccm. Pass oxygen gas through P m. Pass argon gas. All fluids are in Reduce the initial setting of argon on the front of the fire to the fire. Once the fire source. Horizontal scan of Jordan above the deposition point, set the base / mi η and the stage to 03.5〃. This grating moves [0.0 0 6 〃] at The top 7 2 passes through the surrounding pipe 7 The surrounding pipe 7 4 4 passes through the surrounding pipe 7 5 The outer pipe 7 6 8 and the flame is artificially ignited to ignite the inner nozzle, and it is no longer necessary for the heat of 1 π m to be in the nozzle collar 6 2 5 〃 Total time required for operation 3 8 Fortune 2 For ignition, keep the body temperature before the speed 2 For the time to pass (Please read the precautions on the back before filling in this page} · _% Line Straight type with nickel layer Resistance 丨 i 5 Ω For comparison, the solution is repeatedly deposited with phosphoric acid-free solution. The resistance of the nickel layer is 5 Ω / 1 η.

本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）_ 7Q 492018 Α7 --- Β7 五、發明說明έ8 ) KMJ&L4 (請先閱讀背面之注意事項再填寫本頁) 使用下列化學藥品藥品及製程參數沉積 Bi2Ru2〇7: 前驅物溶液： 〇· 0254wt%的B i在2 —乙基己酸鹽中 + 0 · 0 0 8 6wt%的Ru在乙醯基丙酮化物中 + 1 · 8026wt% 甲醇 +15 · 0724wt% 的甲苯+83 · 0910wt%的丙烷。 參數： 前驅物溶液之流動速率爲：3 mil min。 頂端氧流動速率：4 1/mint 凡瑞克（Variac) : 2.30A。 無背後冷卻。 沉積溫度：250 — 65(TC。 經濟部智慧財產局員工消費合作社印製 在400°C氣體溫度及電阻低於7200//Ω· cm 塗佈無定形B i 2 R u 2〇7 ;此爲目前最好的模式。以丙 烷及甲苯作爲溶劑。製備濃縮或稀釋沉積溶液，甲苯可使 用範圍在1至3 5wt%。丙烷範圍在9 9至6 5wt% 也可使用。由改變溶劑重量百分比，（二一 2 —乙基己酸 鹽及R u乙醯基丙酮化物）可相應地調整溶質濃度。前驅 物溶液之流動速率爲範圍可在1 一 5 m 1 / m i η。 -71 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明έ9 ) 實施例5 使用下列化學藥品及製程參數沉積S r R u 0 3 : (請先閱讀背面之注意事項再填寫本頁) 前驅物溶液： 〇· 0〇78wt%的Sr在2 —乙基己酸鹽之中 +〇· 0 0 9 0wt%的Ru在乙醯基丙酮化物之中 + 12 · 792〇wt%的甲苯 +87 · 1912 w t %的丙院。 參數： 前驅物溶液之流動速率爲：3 ml/min 頂端氧流動速率：41/min 凡瑞克（Variac) : 2.75A. 無背後冷卻。 沉積溫度：300 — 650°C。 經濟部智慧財產局員工消費合作社印製 在400°C氣體溫度及低於5400//Ω· cm之電 阻塗佈無定形S r R u〇3 ;此爲目前最好的模式。以丙院 及甲苯作爲溶劑。製備濃縮或稀釋沉積溶液，甲苯可使用 範圍在1至3 5wt% ◦丙烷範圍在9 9至6 5w t%也 可使用。由改變溶劑重量百分比，（二一 2 -乙基己酸鹽 及S r乙醯基丙酮化物）可相應地調整溶質濃度。前驅物 溶彳仪之流動速率爲範圍可在1 一 5 m 1 /m i η。 實施例6 方法一：形成單一分離的電m器 -72- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 -- B7 五、發明說明允) (請先閱讀背面之注咅？事項再填寫本頁) 依據（實施例1 )之方法，在一厚2 5微米之聚醯亞 月安板上，沉積2 0 0奈米厚之鈾/氧化矽層（P t : Sl〇2，97 · S : 2 · 5)。在鈾層上積層光抵抗物， 溥片 5 〇 〇 〇 系歹[J (Laminar 5000Series)，由 Morton International Electronics Materials 公司所售。將抵抗層覆蓋 以光工具，且將抵抗層的未覆蓋部分以7 0毫焦耳的U V 光作曝光。之後由顯影除去未曝光的抵抗層，顯影係在 8 〇 °F於1 %的一水合碳酸鈉溶液中，使用運輸噴霧顯影 劑’在約2 5 p s i之壓力，調整駐在時間以使破壞點發 生在4 〇%至5 0%的室長度，接著使用自來水及去離子 水作幾次噴霧沖洗。 接著，於5 0 °C將此板暴露於5 0 %的王水溶液（ 5 0 0 ml Η 2 0 + 1 2 5 m 1 HN〇3+3 75m 1 H C。）暴露充分地時間以除去（其上已移除抵抗的）該 區所有P t / S 1〇2材料，因此形成分離的電阻器。 實施例7 經濟部智慧財產局員工消費合作社印製 方法二：形成附以銅連接電路之單一分離的電阻器 依據（實施例1 )之方法，在一厚2 5微米之聚醯亞 胺板上，沉積2 0 0奈米厚之鈾/氧化矽層（P t : S 1〇2，9 7 · S : 2 · 5 )。之後將銅直接電鍍於 P t/S 1〇2層之表面其厚度爲1 2微米，使用商場販賣 者供應之酸性銅電鍍缸，使用販賣者供應之標準電鍍參數 。在鍍銅層上積層光抵抗物，薄片5 0 0 0系列（Laminar -73- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明ih ) 5000Senes)，由 Morton International Electronics Materials 公 (請先閱讀背面之注意事項再填寫本頁) 司所售。將抵抗層覆蓋以光工具，且將抵抗層的未覆蓋部 分以7 0毫焦耳的U V光作曝光。之後由顯影除去未曝光 •的抵抗層，顯影係在中8 0 °F於1 %的一水合碳酸鈉溶液 ，使用運輸噴霧顯影劑，在約2 5 p s i之壓力，調整駐 在時間以使破壞點發生在4 0 %至5 0 %的室長度，接著 使用自來水及去離子水作幾次噴霧沖洗。 接著，於5 0 °C將此板暴露於5 0 %的王水溶液（ 5 0 0 ml Η 2 0 + 1 2 5 m 1 HN〇3+375ml H C。）暴露充分地時間以除去（其上已移除抵抗的）該 區所有的鍍銅層及P t / S i 0 2材料，因此形成電子電路 圖樣。於1 3 0 °F在3 %之氫氧化鈉溶液中將光抵抗材料 移除，使用運輸噴霧型抵抗物剝除劑，在約2 5 p s 1之 壓力，調整駐在時間以使破壞點發生在4 0 %至5 0 %的 室長度，接著使用自來水及去離子水作幾次噴霧沖洗。 經濟部智慧財產局員工消費合作社印製 將電路化電子圖樣積層爲光抵抗物，薄片5 0 0 0系 列（Laminar 5000Series)，由 Morton International Electronics Materials公司所售。將抵抗層覆蓋以光工具，且將抵抗層 的未覆蓋部分（所有分離的電阻器以外的面積）以7 0毫 焦耳的U V光作曝光◦之後由顯影除去未曝光的抵抗層， 顯影係在中8 0 °F於1 %的一水合碳酸鈉溶液，使用運輸 噴霧顯影劑，在約2 5 P s 1之壓力，調整駐在時間以使 破壞點發生在4 0 %至5 0 %的室長度，接著使用自來水 及去離子水作幾次噴霧沖洗。之後將暴露的銅區蝕刻用商 -74- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 B7 五、發明說明) (請先閱讀背面之注意事項再填寫本頁) 場販賣者所供應之氯化銅鈾刻劑作蝕刻而僅除去銅’留下 曝光且未蝕刻的p t / S i〇2。因此形成電阻器其由銅電 路線條連接各端點。於1 3 0 °F在3 %之氫氧化鈉溶液中 黹光抵抗移除，使用運輸噴霧型抵抗物剝除劑’在約2 5 P s i之壓力，調整駐在時間以使破壞點發生在4 0 %至 5〇％的室長度，接著使用自來水及去離子水作幾次噴霧 沖洗。 實施例8 方法三：形成Singular Discreet電阻器其具有銅連接電 路。 依據（實施例1 )之方法，在一厚2 5微米之聚醯亞 胺板上，沉積2 0 0奈米厚之鋁/氧化矽層（P t : S 1〇2，9 7 · S : 2 . 5 )。之後將銅直接電鍍於 P t / S 1 0 2 層之表面其厚度爲12微米，使用商場販 賣者供應之酸性銅電鍍缸與電鍍參數。在鍍銅層上積層光 抵抗物，薄片5 0〇0系列（Laminar 5000Series)，由 經濟部智慧財產局員工消費合作社印製This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) _ 7Q 492018 Α7 --- Β7 V. Description of invention 8) KMJ & L4 (Please read the precautions on the back before filling this page) Use The following chemicals and process parameters are used to deposit Bi2Ru2〇7: precursor solution: 0. 0254wt% of Bi in 2-ethylhexanoate + 0. 0 0 8 6wt% of Ru in acetamidoacetone + 1 · 8026 wt% methanol + 15 · 0724 wt% toluene + 83 · 0910 wt% propane. Parameters: The flow rate of the precursor solution is: 3 mil min. Tip oxygen flow rate: 4 1 / min Variac: 2.30A. No cooling behind. Deposition temperature: 250 — 65 (TC. Printed at 400 ° C with a gas temperature and resistance lower than 7200 // Ω · cm coated with amorphous B i 2 R u 207; this is The best mode at present. Propane and toluene are used as solvents. To prepare concentrated or diluted deposition solution, toluene can be used in the range of 1 to 35% by weight. Propane can be used in the range of 9 to 65% by weight. By changing the solvent weight percentage, (212-Ethylhexanoate and Ru ethylacetone) The solute concentration can be adjusted accordingly. The flow rate of the precursor solution can range from 1 to 5 m 1 / mi η. -71-This paper The scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 B7 V. Description of Invention 9) Example 5 Use the following chemicals and process parameters to deposit S r R u 0 3: (Please read the back Note: Please fill in this page again.) Precursor solution: 〇.〇〇78wt% Sr in 2-ethylhexanoate + 〇 0 0 0 0wt% Ru in acetamidoacetone + 12 · 792〇wt% toluene +87 · 1912 wt% Cingyuan. Parameters: The flow rate of the precursor solution is: 3 ml / min. The top oxygen flow rate: 41 / min. Variac: 2.75A. No back cooling. Deposition temperature: 300-650 ° C. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs at 400 ° C gas temperature and a resistive coating of less than 5400 // Ω · cm. Amorphous S r R u〇3; this is currently the best mode. C solvent and toluene were used as solvents. For the preparation of concentrated or diluted deposition solutions, toluene can be used in the range of 1 to 35 wt%. ◦ Propane can be used in the range of 9 to 65 wt%. The solute concentration can be adjusted accordingly by changing the weight percentage of the solvent (di-2-ethylhexanoate and S r acetamidoacetone). The flow rate of the precursor dissolution apparatus can range from 1 to 5 m 1 / m i η. Example 6 Method 1: Forming a Single Separate Electrical Device-72- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 492018 A7-B7 V. Explanation of the invention) (Please read first) Note on the back? Please fill in this page again.) According to the method of (Example 1), deposit a uranium / silicon oxide layer of 200 nanometers thick on a 25 μm polyfluorene sub-monthly board. t: Sl〇2, 97 · S: 2 · 5). Laminated on the uranium layer is a photoresist, a ytterbium sheet 5000 [J (Laminar 5000 Series), sold by Morton International Electronics Materials. The resist layer was covered with a light tool, and the uncovered portion of the resist layer was exposed with 70 V of UV light. The unexposed resist was then removed by development. The development was performed at 80 ° F in a 1% sodium carbonate monohydrate solution, using a transport spray developer, at a pressure of about 2 5 psi, and the residence time was adjusted so that the failure point occurred. At 40% to 50% of the chamber length, a few spray rinses were followed using tap water and deionized water. Next, this plate was exposed to 50% aqua regia solution (500 ml Η 2 0 + 1 2 5 m 1 HN〇3 + 3 75 m 1 HC.) At 50 ° C for a sufficient time to remove (the All P t / S 102 materials in this area have been removed), thus forming a separate resistor. Example 7 Printing method for employee cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: Form a single discrete resistor with a copper connection circuit in accordance with the method of Example 1 on a polyimide board with a thickness of 25 micrometers , Depositing a uranium / silicon oxide layer with a thickness of 200 nanometers (P t: S 102, 97 · S: 2 · 5). Copper was then directly plated on the surface of the P t / S 102 layer with a thickness of 12 microns. An acid copper plating tank supplied by the vendor was used, and standard plating parameters supplied by the vendor were used. Laminated with light resistance on copper plating layer, thin sheet 5000 series (Laminar -73- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 B7 V. Description of invention ih) 5000Senes ), Sold by Morton International Electronics Materials (please read the notes on the back before filling out this page). The resist layer was covered with a light tool, and the uncovered portion of the resist layer was exposed with 70 V of UV light. After that, the unexposed resist layer was removed by development. The development system was at 80 ° F in 1% sodium carbonate monohydrate solution. Using a transport spray developer, the residence time was adjusted at a pressure of about 25 psi to make the damage point. Occurs at 40% to 50% of the chamber length, followed by several spray rinses with tap water and deionized water. Next, the plate was exposed to 50% aqua regia solution (500 ml Η 2 0 + 1 2 5 m 1 HN〇3 + 375 ml HC) at 50 ° C for a sufficient period of time to remove (on which Remove all resistive) copper plating and P t / S i 0 2 material in the area, thus forming an electronic circuit pattern. Remove the light-resistant material at 3 0 ° F in a 3% sodium hydroxide solution. Use a transport spray-type resist stripper at a pressure of about 2 5 ps 1 to adjust the dwell time so that the failure point occurs at 40% to 50% of the chamber length, followed by several spray rinses with tap water and deionized water. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The circuitized electronic pattern is laminated into a photoresistor, a sheet of 5000 series (Laminar 5000 Series), sold by Morton International Electronics Materials. Cover the resist layer with a light tool, and expose the uncovered part of the resist layer (the area other than the separated resistors) with 70 millijoules of UV light. After that, the unexposed resist layer is removed by development. The development system is Medium 80 ° F in 1% sodium carbonate monohydrate solution, using a transport spray developer, at a pressure of about 2 5 P s 1, adjust the residence time so that the failure point occurs at 40% to 50% of the chamber length , Then use tap water and deionized water for several spray rinses. The copper area that will be exposed later will be used for etching -74- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 B7 V. Description of the invention) (Please read the precautions on the back before filling in this Page) The copper uranium chloride etchant supplied by the field seller is used for etching and only copper is removed, leaving exposed and unetched pt / Sio2. A resistor is thus formed which is connected to the terminals by a copper electrical strip. Remove the photoresist at 3 0 ° F in a 3% sodium hydroxide solution. Use a transport spray type resist stripper 'at a pressure of about 2 5 P si. Adjust the residence time so that the failure point occurs at 4 0% to 50% of chamber length, followed by several spray rinses with tap water and deionized water. Embodiment 8 Method 3: Form a Singular Discreet resistor with a copper connection circuit. According to the method of (Example 1), a 200 nm aluminum / silicon oxide layer (P t: S 102, 97 · S: 2. 5). After that, copper was directly plated on the surface of the P t / S 102 layer with a thickness of 12 micrometers, using an acid copper plating tank and plating parameters supplied by the mall vendor. Laminar 5000 Series laminated on a copper-plated layer, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

Morton International Electronics Materials 公司所售。將抵抗 層覆蓋以光工具，且將抵抗層的未覆蓋部分以7 0毫焦耳 的U V光作曝光。之後由顯影除去未曝光的抵抗層，顯影 係在中8 0 °F於1 %的一水合碳酸鈉溶液，使用運輸噴霧 顯影劑，在約2 5 p s 1之壓力，調整駐在時間以使破壞 點發生在4 0%至5 0%的室長度，接著使用自來水及去 離子水作幾次噴霧沖洗。 -75- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明h ) (請先閱讀背面之注音2事項再填寫本頁) 之後將P t / S i〇2暴露在販賣者供應之氯化銅飩刻 劑中以對銅作蝕刻。剝除此抵抗層且使用工業上標準真空 疊層方法形成新的光抵抗層（Laminar 5000Series)。將線寬寬 ’於原來圖樣二絲（mils)之第二光罩用於曝光此第二圖樣，使 用相同於原來抵抗曝光操作所用的曝光參數。 接著，於5 0 °C將此板暴露於5 0 %的王水溶液（ 5 0 0 ml Η 2 0 + 1 2 5 m 1 HN〇3+375ml H C。）暴露充分地時間以除去（其上已移除抵抗的）該 區所有的已曝光P t / S i〇2材料，因此形成電子電路圖 樣。於1 3 0 °F在3 %之氫氧化鈉溶液中將光抵抗移除， 使用運輸噴霧型抵抗物剝除劑，在約2 5 p s i之壓力， 調整駐在時間以使破壞點發生在4 0 %至5 0 %的室長度 ，接著使用自來水及去離子水作幾次噴霧沖洗。 經濟部智慧財產局員工消費合作社印製 在板上疊以新的第三光抵抗層，薄片5 0 0 〇系列 (Laminar 5000Series)，由 Morton International Electronics Materials公司所售。將抵抗層覆蓋以光工具，且將抵抗層 的未覆蓋部分（所有分離的電阻器以外的面積）以7 0毫 焦耳的U V光作曝光。之後由顯影除去未曝光的抵抗層， 顯影係在中8 0 °F於1 %的一水合碳酸鈉溶液，使用運輸 噴霧顯影劑，在約2 5 p s 1之壓力，調整駐在時間以使 破壞點發生在4 0 %至5 0 %的室長度，接著使用自來水 及去離子水作幾次噴霧沖洗。之後將暴露的銅區蝕刻用商 場販賣者所供應之氯化銅飩刻劑作飩刻而僅除去銅，留下 曝光且未鈾刻的P t / S 1 0 2。因此形成電阻器其由銅電 -76- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _ B7 五、發明說明f4 ) (請先閱讀背面之注咅3事項再填寫本頁) 路線條連接各端點。於1 3 0 °F在3 %之氫氧化鈉溶液中 將光抵抗移除，使用運輸噴霧型抵抗物剝除劑，在約2 5 P s 1之壓力，調整駐在時間以使破壞點發生在4 0 %至 ’ 5 0 %的室長度，接著使用自來水及去離子水作幾次噴霧 沖洗。 實施例9 具氧化矽障礙層之電阻器 此係使用S 1 0 2障礙而製造包理電阻器之實施例。 由具有所欲完成的電路線條厚度之銅箔開始，由 C C V D沉積法將厚約2 0至5 0奈米之S i〇2障礙層沉 積在銅箔之上。此可完成由在一箔單板沉積或由使用一捲 (軸至軸）方法。 在障礙層沉積程序之後，使用C C V D方法，將電阻 器材料（例如P t金屬攙添以2 · 5 % S i〇2 )沉積爲厚 度約1 0 0至1 5 0奈米。在此沉積材料之試驗品質包括 厚度、組成物及總體電阻。 經濟部智慧財產局員工消費合作社印製 實際電阻器材料試樣係由作爲障礙層之無定形氧化砂 塗層與上面鈾氧化矽複合材料電阻器層所組成。基質爲尺 寸2 4 〃 X 3 0 〃之銅箔其塗佈區爲1 8 〃 X 2 4 〃 。 電阻器前驅物之溶液包含0 · 5 1 2 w t %的二苯基 (1 ，5 —環辛二烯鉑（I I ) ，〇 · 〇 2 8 w t % 的四 乙氧基矽烷，58 · 62wt%的甲苯及4〇· 69 w t %的丙烷之溶液氧化矽前驅物包含〇 · 8 7 w t %的 -77- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 492018 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明始) 四乙氧基矽烷，8 · 16wt%的異丙醇及90 . 96 w t %的丙院。具氧化砂障礙層電阻器塗層之沉積也使用 P t ( S 1〇2 )前驅物之溶液，其較低濃度如以上濃度的 •80%，75%，65%及 5 0%。 使用四噴嘴C C V D系統執行沉積，在6 5 0 t：作首 層氧化矽，在7 5 0 °C作第二層氧化矽且在7 〇 〇 °C於上 面作三層的Pt (Si〇2)電阻器塗層之沉積。 自此組合（package)除去不希望的電阻器材料，而在電 阻器材料上塗佈光可成像的蝕刻抵抗（例如薄層5 〇 0〇 )。光抵抗材料係使用標準光程序技術（例如經光罩作 U V光曝光）作曝光，且使用適當溶劑（例如2 %的碳酸 鈉溶液，在8 0 °C )移除未聚合的光抵抗層，以揭開將在 後續脫落蝕刻方法中移除之電阻器材料。之後經噴霧蝕刻 機器將此組合（其中有玻璃蝕刻劑溶液（例如1 · 7 w t %的二氟化氫銨及1 · 〇 5 w t %的在水中的氟硼酸 作處理）），經充分時間加工而化學侵襲S i〇2障礙層並 剝離不希望的電阻器材料。此方法之原理爲蝕刻劑穿過電 阻器材料中微孔而侵襲下層的S 1〇2層。當S i〇2層由 玻璃蝕刻劑溶解，電阻器材料失去黏著且由於薄度破斷爲 小片且以固體被噴霧蝕刻劑材料帶走。須限制暴露於鈾刻 劑之期間使可充分地除去電阻器材料，但不至於長到（約 1 5至6 0秒）引起由光抵抗物覆蓋的所欲材料之切除。 之後將電阻器材料傳送至一層的標準環氧積層物材料 上，此係使用商業上積層方法，將一片7 6 2 8 9預浸帶 (請先閱讀背面之注意事項再填寫本頁) ·% · -線- 本紙張尺度適用中國國豕標準（CNS)A4規格（21〇 X 297公羞） -78- 492018 A7 _____B7 五、發明說明) (請先閱讀背面之注意事項再填寫本頁) 置於蝕刻電阻器組邊上的電阻器材料，接著放上有機離型 板。將此組合置於標準p w B積層熱壓機並使用標準積層 條件作硬化。積層後將離型板自積層物組合撕除並移除銅 ’而暴露電阻器且形成連接電路線條。除去銅之方法係使用 標準光程序技術並以氯化銅作鈾刻。電阻器之形成係由自 表面除去銅而留下連接於電阻器兩端點之銅。 實施例1 0 具鎳障礙層之電阻器 此係使用鎳障礙而製造包理電阻器之實施例。 由具有所欲完成的電路線條厚度之銅箔開始，由電鍍 或由C C V D沉積法將厚約2 0至5 0奈米之鎳金屬障礙 層沉積在銅箔之上。此可完成由在一箔單板沉積或由使用 一捲（軸至軸）方法。 經濟部智慧財產局員工消費合作社印製 在障礙層沉積程序之後，使用C C V D方法，將電阻 器材料（例如P t金屬攙添以2 · 5 % S 1〇2 )沉積爲厚 度約1 0 0至1 5 0奈米。在此沉積材料之試驗品質包括 厚度，組成物及總體電阻。 實際具鎳障礙層具鎳障礙層之電阻器試樣。此試樣係 由三層1 8 〃 x 2 4 〃銅板所組成，其已使用商業上的鎳電 鍍缸作鎳電鍍。將三種鎳的厚度沉積爲厚約3 · 5， 7 · 0，及10 · 5微米。基質係商業上用於生產標準 P W B (印刷線路板）之銅范。 沉積電阻器材料係使用電阻器前驅物之溶液，其中包 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐了 492018 A7 B7 五、發明說明女7 含0 · 512wt%的二苯基（1 ，5 -環辛二烯鉑（ 1 1 ) ，〇 · 〇28wt%的四乙氧基矽烷，58 · 62 w t %的甲苯及4 0 · 6 9 w t %的丙烷之溶液。具鎳障 礙層電阻器塗層之沉積也使用P t ( S i〇2 )前驅物之溶 液，其較低濃度如以上濃度的8 0 %，7 5 %，6 5 %及 5 0%。 使用四噴嘴C C V D系統執行沉積，在7 〇 〇 ac於上 面作三層的P t ( S i〇2)電阻器塗層之沉積。 自此組合除去不希望的電阻器材料，而將光可成像的 倉虫4抵ί/L (例如溥層5 0 0 0 )，塗佈於電阻器材料組合 之兩邊（右是選擇性餓刻劑材料其僅餓刻鎮而不触刻銅， 將被抹用於剝離性地鈾刻電阻器，僅電阻器材料邊須施塗 以光抵抗材料）。光抵抗材料係使用標準光程序技術（例 如經光罩作U V光曝光）作曝光，且使用適當溶劑（例如 2 %的碳酸鈉溶液’在8 〇 〇C )移除未聚合的光抵抗層， 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 以揭開將在後續脫落蝕刻方法中移除之電阻器材料。之後 經噴霧蝕刻機器將此組合處理，其中商業上氯化銅蝕刻溶 液噴霧在零件之上造成電阻器材料之剝離蝕刻。此方法之 原理爲蝕刻劑穿過電阻器材料中微孔而侵襲下層的鎳層。 當鎳層由氯化銅溶解，電阻器材料失去黏著，且由於薄度 破斷爲小片且以固體被噴霧蝕刻劑材料帶走。須限制暴露 於餓刻劑之期間使可充分地除去電阻器材料，但不至於長 到（約1 5至6 0秒）蝕刻穿銅箔載體。 之後將電阻器材料傳送至一層的標準環氧積層物材料 -80- 492018 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明知) 上，此係使用商業上積層方法，將一片7 6 2 8 9預浸帶 置於蝕刻電阻器組邊上的電阻器材料，接著放上有機離型 板。將此組合置於標準P W B積層熱壓機並使用標準積層 滌件作硬化。積層後將離型板自積層物組合撕除，並移除 銅而暴露電阻器且形成連接電路線條。除去銅之方法係使 用標準光程序技術並以氯化銅作蝕刻。電阻器之形成係由 自表面除去銅而留下連接於電阻器兩端點之銅。 實施例1 1 氧化緦障礙層之沉積 使用C C V D方法將氧化緦塗層沉積於c U上。保持 固定的沉積溶液流動速率，氧流動速率及冷卻空氣流動速 率。氧化緦前驅物之溶液包含0 · 7 1 w t %的2 -乙基 己酸緦，12 · 75wt%的甲苯，及86 · 54wt% 的丙烷。在6 5 p s 1 ，溶液之流動速率爲3 .〇 m 1 / m 1 η ，且氧之流動速率爲3 5 0 0 m 1 / m 1 η 。冷卻空氣係在常溫，且在8 0 p s :流動速率爲2 5 1 / m i η。冷卻空氣係以銅管通向在基質背後，銅管之 末端置於距基質背後2英寸。在7 0 0 °C的火焰溫度執行 沉積，該火焰溫度係以K型熱電偶在基質表面量測。冷卻 空氣流動速率可在1 5至4 4 1/m 1 η之範圍。沉積溫 度可在500至8〇〇°C之間。 1 2 (請先閱讀背面之注意事項再填寫本頁) _% 訂： --線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -81 - 492018 A7 _ B7 五、發明說明知) 氧化鋅障礙層之沉積 (請先閱讀背面之注咅？事項再填寫本頁) 使用C C V D方法將氧化鋅塗層沉積於C u上。保持 固定的沉積溶液流動速率，氧流動速率及冷卻空氣流動速 宰。氧化鋅前驅物之溶液包含2 · 3 5 w t %的2 -乙基 己酸鋅，7 · 79wt%的甲苯，及89 · 86wt%的 丙烷。在6 5 p s i ，溶液之流動速率爲3 ·〇 ml/min ，且氧之流動速率爲4000ml/min 。冷卻空氣係在常溫，且在8 0 p s 1流動速率爲2 5 1 / m i η。冷卻空氣係以銅管通向在基質背後，銅管之 末端置於距基質背後2英寸。在7 0 0 °C的火焰溫度執行 沉積，該火焰溫度係以K型熱電偶在基質表面量測。冷卻 空氣流動速率可在9至2 5 1/m i η之範圍。沉積溫度 可在625至8〇0t：之間。 實施例1 3 氧化鎢障礙層之沉積 經濟部智慧財產局員工消費合作社印製 使用C C V D方法將氧化鎢塗層沉積於C u上。保持 固定的沉積溶液流動速率，氧流動速率及冷卻空氣流動速 率。氧化鎢前驅物之溶液包含2 · 0 6 w t %的六羰基鎢 ，26 · 52wt%的甲苯，及73 · 28wt%的丙院 。在65ps i ，溶液之流動速率爲3 · Oml/mi η ，且氧之流動速率爲3 50〇ml/mi η。在3 5〇°C 的沉積溫度不使用冷卻空氣。基質表面溫度係以K型熱電 偶量測。在沉積中可引入冷卻空氣且係係導向基質背後， -82 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 492018 A7 _B7 五、發明說明έο ) 〇 r—Η ο 至 C ο 7〇 在 ο 可 8 率至 速 ο 動 5 流 3 其在 可 度 溫 積 沉 圍 箪 之 η 1 m (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -83-Sold by Morton International Electronics Materials. The resist layer was covered with a light tool, and the uncovered portion of the resist layer was exposed with 70 V of UV light. The unexposed resist is then removed by development. The development is performed at 80 ° F in a 1% sodium carbonate monohydrate solution, using a transport spray developer, at a pressure of about 2 5 ps 1 to adjust the residence time to the point of failure. Occurs at 40% to 50% of the chamber length, followed by several spray rinses with tap water and deionized water. -75- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 _ B7 V. Description of the invention h) (Please read the note 2 on the back before filling this page) and then P t / Sio2 was exposed to copper chloride etchant supplied by the vendor to etch the copper. Strip this resist and use the industry standard vacuum lamination method to form a new light resist (Laminar 5000Series). A second mask using the line width and the second pattern (mils) of the original pattern is used to expose this second pattern, using the same exposure parameters as the original resistive exposure operation. Next, this plate was exposed to 50% aqua regia solution (500 ml Η 2 0 + 1 2 5 m 1 HN〇3 + 375 ml HC) at 50 ° C for a sufficient period of time to remove (on which Remove all exposed Pt / Sio2 materials from this area, thus forming an electronic circuit pattern. Remove the light resistance in a 3% sodium hydroxide solution at 130 ° F. Use a transport spray resist stripper at a pressure of about 25 psi. Adjust the dwell time so that the failure point occurs at 40 % To 50% of the chamber length, followed by several spray rinses with tap water and deionized water. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A new third light-resistant layer, Laminar 5000 Series, is laminated on the board and sold by Morton International Electronics Materials. The resist layer was covered with a light tool, and the uncovered portion of the resist layer (the area other than all the separated resistors) was exposed with 70 V of UV light. The unexposed resist is then removed by development. The development is performed at 80 ° F in a 1% sodium carbonate monohydrate solution, using a transport spray developer, at a pressure of about 2 5 ps 1 to adjust the residence time to the point of failure. Occurs at 40% to 50% of the chamber length, followed by several spray rinses with tap water and deionized water. Thereafter, the exposed copper area was etched with a copper chloride etchant supplied by a commercial vendor to remove only copper, leaving P t / S 102 which was exposed and not etched with uranium. Therefore, the resistor is formed by copper electricity -76- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 492018 A7 _ B7 V. Description of the invention f4) (Please read Note 3 on the back first (Fill on this page again) The route bar connects the endpoints. Remove the light resistance in a 3% sodium hydroxide solution at 130 ° F. Use a transport spray type resist stripper at a pressure of about 2 5 P s 1 to adjust the dwell time so that the failure point occurs at 40% to '50% of chamber length, followed by several spray rinses with tap water and deionized water. Example 9 Resistor with Silicon Oxide Barrier Layer This is an example of manufacturing a packaged resistor using a S 102 barrier. Starting with a copper foil having the thickness of the circuit line to be completed, a S i02 barrier layer with a thickness of about 20 to 50 nanometers is deposited on the copper foil by the CCVD deposition method. This can be done by depositing on a foil veneer or by using a roll (axis-to-axis) method. After the barrier layer deposition procedure, a CCVD method is used to deposit a resistor material (for example, Pt metal with 2.5% Sio2) to a thickness of about 100 to 150 nm. The test qualities of the material deposited here include thickness, composition, and overall resistance. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The actual resistor material sample consists of an amorphous oxide sand coating as a barrier layer and a uranium-silicon oxide composite resistor layer above. The substrate is a copper foil with a size of 2 4 〃 X 3 0 其 and its coating area is 1 8 〃 X 2 4 〃. The resistor precursor solution contains 0.51 2 wt% of diphenyl (1,5-cyclooctadiene platinum (II), 0.82 wt% of tetraethoxysilane, 58.62 wt% A solution of toluene and 4 · 69 wt% propane in silicon oxide precursor containing 0.87 wt% -77- This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) 492018 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention) Tetraethoxysilane, 8.16 wt% isopropanol and 90. 96 wt% C-Yuan. The deposition of resistor coatings with oxidized sand barrier layers also uses a solution of the P t (S 10 2) precursor. Its lower concentrations are as above: 80%, 75%, 65%, and 50%. A four-nozzle CCVD system was used to perform the deposition at 650 t: as the first layer of silicon oxide, at 750 ° C as the second layer of silicon oxide, and three layers of Pt (Si〇2) at 700 ° C. ) Deposition of resistor coating. From this package, the unwanted resistor material is removed, and a photoimageable etch resistance (such as a thin layer of 50000) is applied to the resistor material. The light-resistant material is exposed using standard photo-programming techniques (such as UV exposure through a reticle), and the unpolymerized light-resistant layer is removed using a suitable solvent (for example, 2% sodium carbonate solution at 80 ° C). To expose the resistor material that will be removed in a subsequent peel-off etch method. This combination is then processed by a spray etching machine (including a glass etchant solution (such as 1.7 wt% ammonium bifluoride and 1.05 wt% fluoroboric acid in water)), and chemically processed after sufficient time Attacks the Si02 barrier layer and strips off unwanted resistor material. The principle of this method is that the etchant penetrates the micropores in the resistor material and attacks the underlying S 102 layer. When the Sio2 layer is dissolved by the glass etchant, the resistor material loses adhesion and breaks into small pieces due to thinness and is taken away by the spray etchant material as a solid. The period of exposure to the uranium etch must be limited so that the resistor material can be removed sufficiently, but not so long as to cause (approximately 15 to 60 seconds) the removal of the desired material covered by the photoresist. The resistor material is then transferred to a layer of standard epoxy laminate material, which uses a commercial lamination method to apply a piece of 7 6 2 8 9 prepreg tape (please read the precautions on the back before filling this page) ·% · -Line-This paper size is in accordance with China National Standard (CNS) A4 specification (21〇X 297 public shame) -78- 492018 A7 _____B7 V. Description of invention) (Please read the notes on the back before filling this page) The resistor material is etched on the side of the resistor group, and then an organic release plate is placed. This combination was placed in a standard pw B laminated hot press and hardened using standard laminated conditions. After the lamination, the release board is peeled off from the laminate and the copper is removed to expose the resistor and form the connecting circuit lines. The method of removing copper is to use standard optical programming techniques and use copper chloride for uranium engraving. The resistor is formed by removing copper from the surface and leaving copper connected to the two ends of the resistor. Example 10 A resistor with a nickel barrier layer This is an example of manufacturing a packaged resistor using a nickel barrier. Starting with a copper foil having the desired thickness of the circuit lines, a nickel metal barrier layer having a thickness of about 20 to 50 nanometers is deposited on the copper foil by electroplating or by a CCVD deposition method. This can be done by depositing on a single veneer or by using a roll (axis-to-axis) method. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs after the barrier layer deposition process, the CCVD method is used to deposit the resistor material (such as Pt metal with 2.5% S 102) to a thickness of about 100 to 150 nanometers. The test qualities of the material deposited here include thickness, composition and overall resistance. A resistor sample with an actual nickel barrier layer. This sample consists of three layers of 1 8〃 x 2 4〃 copper plates, which have been nickel plated using a commercial nickel electroplating cylinder. Three kinds of nickel were deposited to a thickness of about 3, 5, 7 and 0, and 10,5 microns. Substrates are copper grades commercially used to produce standard PWBs (printed wiring boards). The material of the deposited resistor is a solution using a resistor precursor, in which the paper size of the package is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm 492018 A7 B7 V. Description of the invention. Female 7 contains 0 · 512wt% A solution of phenyl (1,5-cyclooctadiene platinum (1 1), 0.028 wt% tetraethoxysilane, 58.62 wt% toluene and 40.6.9 wt% propane. With The deposition of the nickel barrier layer resistor coating also uses a solution of the P t (Sio2) precursor, with lower concentrations such as 80%, 75%, 65%, and 50% of the above concentrations. Use four The nozzle CCVD system performs deposition, depositing three layers of Pt (Sio2) resistor coating on 700ac. From this combination, the unwanted resistor material is removed, and the photoimageable bin is Insect 4 arrived at ί / L (for example, 溥 layer 5 0 0 0), coated on both sides of the resistor material combination (the right is selective engraving material, which only engraved without touching copper, will be wiped with Penetrating uranium-etched resistors, only the material of the resistor must be coated with a light-resistant material. The light-resistant material uses standard light-programming techniques (such as Cover for UV light exposure) and use an appropriate solvent (for example, 2% sodium carbonate solution at 800 ° C) to remove the unpolymerized photoresist layer, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to uncover The resistor material will be removed in a subsequent peeling etching method. This combination is then processed by a spray etching machine, where a commercial copper chloride etching solution is sprayed on the part to cause the peeling etching of the resistor material. The principle of this method is The etchant penetrates the micro-holes in the resistor material and invades the underlying nickel layer. When the nickel layer is dissolved by copper chloride, the resistor material loses adhesion and breaks into small pieces due to thinness and is taken away by the spray etchant material as a solid The duration of exposure to the etch resist must be limited so that the resistor material can be removed sufficiently, but not so long as to (about 15 to 60 seconds) to etch through the copper foil carrier. The resistor material is then transferred to a standard ring Oxygen laminate material-80- 492018 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (5. Description of the invention) This is a commercial layering method. 7 6 2 8 9 The prepreg tape is placed on the resistor material on the side of the etched resistor group, and then the organic release plate is placed. This combination is placed in a standard PWB laminated hot press and hardened using a standard laminated polyester. Laminated After that, the self-laminating layer combination of the release plate is torn off, and the copper is removed to expose the resistor and form the connecting circuit lines. The method of removing copper is to use standard optical programming technology and etching with copper chloride. The resistor is formed by Copper was removed from the surface, leaving copper connected to the two ends of the resistor. Example 1 1 Deposition of a hafnium oxide barrier layer A hafnium oxide coating was deposited on c U using a CCVD method. Maintain a constant deposition solution flow rate, oxygen flow rate, and cooling air flow rate. The solution of the hafnium oxide precursor contained 0.71 wt% of europium 2-ethylhexanoate, 12.75 wt% toluene, and 86.54 wt% propane. At 65 p s 1, the flow rate of the solution was 3.0 m 1 / m 1 η, and the flow rate of oxygen was 3 500 m 1 / m 1 η. The cooling air is at normal temperature and at 80 ps: the flow rate is 2 5 1 / m i η. The cooling air is directed to the back of the substrate by a copper tube, and the end of the copper tube is placed 2 inches behind the substrate. Deposition was performed at a flame temperature of 700 ° C, which was measured on a substrate surface with a K-type thermocouple. The cooling air flow rate may range from 15 to 4 4 1 / m 1 η. The deposition temperature can be between 500 and 800 ° C. 1 2 (Please read the notes on the back before filling out this page) _% Order: --Line · This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -81-492018 A7 _ B7 5 (Description of the invention) Zinc oxide barrier layer deposition (Please read the note on the back? Matters before filling out this page) Use the CCVD method to deposit the zinc oxide coating on Cu. Maintain a constant deposition solution flow rate, oxygen flow rate, and cooling air flow rate. The zinc oxide precursor solution contained 2.35 wt% zinc 2-ethylhexanoate, 7.79 wt% toluene, and 89.86 wt% propane. At 65 p s i, the flow rate of the solution was 3.0 ml / min, and the flow rate of oxygen was 4000 ml / min. The cooling air is at normal temperature and has a flow rate of 2 5 1 / m i η at 80 p s 1. The cooling air is directed to the back of the substrate by a copper tube, and the end of the copper tube is placed 2 inches behind the substrate. Deposition was performed at a flame temperature of 700 ° C, which was measured on a substrate surface with a K-type thermocouple. The cooling air flow rate can range from 9 to 2 5 1 / m i η. The deposition temperature can be between 625 and 800 t :. Example 1 3 Tungsten oxide barrier layer deposition Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The tungsten oxide coating was deposited on Cu using the C C V D method. Maintain a constant deposition solution flow rate, oxygen flow rate, and cooling air flow rate. The tungsten oxide precursor solution contained 2.06 wt% tungsten hexacarbonyl tungsten, 26.52 wt% toluene, and 73.28 wt% Cingyuan. At 65 psi, the flow rate of the solution was 3.0 ml / mi η and the flow rate of oxygen was 350 ml / mi η. No cooling air is used at a deposition temperature of 350 ° C. The substrate surface temperature was measured with a K-type thermocouple. Cooling air can be introduced in the deposition and it is behind the guide matrix. -82-This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 492018 A7 _B7 V. Description of the invention ο) 〇r—Η ο To C ο 7〇 at ο 8 rate to speed ο move 5 streams 3 η 1 m in the measurable temperature accumulation (please read the precautions on the back before filling out this page) Staff Consumption of Intellectual Property Bureau of the Ministry of Economic Affairs The paper size printed by the cooperative is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) -83-

Claims (1)

492018 A8 B8 C8 D8 六、申請專利範圍 附件一： 第881 04509號專利申請案 中文申請專利範圍修正本 民國90年12月修正 1 · 一種電阻器，其包含在絕緣基質上的一層電阻器 材料，與在該電阻器材料層上成空間分隔位置的裝置，該 裝置係用於與該電阻器材料層之電氣連接，該電阻器包含 一均質的混合物，該混合物係介於約9 5與約9 9 . 5 wt%之零原子價金屬與介於約5與約0 . 5wt%_之介 電材料的混合物。 2 ·如申請專利範圍第1項之電阻器，其中該金屬或 準金屬氧化物爲選自由鋁，矽，鎂，緦，稀土族元素，及 其混合物所組成之群組中元素的氧化物。 3 .如申請專利範圍第1項之電阻器，其中該金屬爲· 鉑且該介電材料爲金屬氧化物或準金屬氧化物。 4 .如申請專利範圍第2項之電阻器，其中該準金屬 氧化物爲氧化矽。 5 ·如申請專利範圍第2項之電阻器，其中該金屬氧 化物爲氧化鋁。 6 ·如申請專利範圍第1項之電阻器，其中該金屬爲 金且該介電材料爲金屬氧化物或準金屬氧化物。. 7 ·如申請專利範圍第6項之電阻器，.其中該準金屬 氧化物爲氧化矽。 8 .如申請專利範圍第6項之電阻器，其中該金屬氧 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、v 一口492018 A8 B8 C8 D8 VI. Scope of Patent Application Annex I: Patent Application No. 881 04509 Chinese Application for Patent Scope Amendment Dec. 1990 Republic of China 1. A resistor, which contains a layer of resistor material on an insulating substrate, And a device spaced apart from the resistor material layer, the device is used for electrical connection with the resistor material layer, the resistor comprises a homogeneous mixture, the mixture is between about 9 5 and about 9 A mixture of 9.5 wt% zero atomic valent metal and a dielectric material between about 5 and about 0.5 wt%. 2. The resistor according to item 1 of the patent application range, wherein the metal or metalloid oxide is an oxide of an element selected from the group consisting of aluminum, silicon, magnesium, scandium, a rare earth element, and a mixture thereof. 3. The resistor according to item 1 of the patent application scope, wherein the metal is platinum and the dielectric material is a metal oxide or a metalloid oxide. 4. The resistor according to item 2 of the patent application, wherein the metalloid oxide is silicon oxide. 5. The resistor according to item 2 of the patent application, wherein the metal oxide is alumina. 6. The resistor according to item 1 of the patent application scope, wherein the metal is gold and the dielectric material is a metal oxide or a metalloid oxide. 7 · The resistor according to item 6 of the patent application, wherein the metalloid oxide is silicon oxide. 8. If the resistor in the scope of the patent application is No. 6, the metal oxygen paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page), v One bite 經濟部智慧財產局员工消費合作社印製 492018 A8B8C8D8 六、申請專利範圍 化物爲氧化銘。 9 ·如申請專利範圍第1項之電阻器，其中該金屬爲 鎳且該介電材料爲金屬氧化物或準金屬氧化物。 1 〇 ·如申請專利範圍第9項之電阻器，其中該準金 屬氧化物爲氧化矽。 1 1 ·如申請專利範圍第9項之電阻器，其.中該金屬 氧化物爲氧化鋁。 1 2 ·如申請專利範圍第1項之電阻器，其中該層電 阻器材料係介於約4 0與約5 0，0 0 〇 A厚。 1 3 ·如申請專利範圍第1項之電阻器，其中該層電 阻器材料爲由燃燒化學蒸汽沉積法作沉積之材料。 1 4 ·如申請專利範圍第1項之電阻器，其係包埋於 絕緣材料中。 1 5 ·如申請專利範圍第1項之電阻器，其中該絕緣 基質爲有機材料。 ^ 1 6 ·如申請專利範圍第1項之電阻器，其中該絕緣 基質厚約10微米或較低。 i 7 ·如申請專利範圍第1項之電阻器，其中該,絕，緣 基質厚約1 〇微米至約1 0 〇微米。 1 8 · —種電氣抵抗材料，其包含一均質混合物，該 混合物係介於約8 0與約9 9 · 5 w t %的零原子價金屬 或零原子價金屬合金’與介於約0 · 1與約2 〇w to/^ L %的 介電材料之混合物。 1 9 ·如申請專利範圍第1 8項之電氣抵抗材料， (請先閱讀背面之注意事項再填寫本頁) I I ^ «II 濤 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -2 - 492018 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 該介電材料爲金屬氧化物或準金屬氧化物。 2 〇 ·如申請專利範圍第1 9項之電氣抵抗材料，其中 該金屬或準金屬氧化物爲選自由氧化矽、氧化鋁、氧化鉻、 氧化鈦、氧化鈽、氧化鋅、磷氧化物、氧化鉍、稀土族氧化 物，氧化鉻，及其混合物所組成之群組。 2 1 ·如申請專利範圍第1 8項之電氣抵抗材料，其中 該金屬或合金係選自由Pt、Ni、Ag、Cu、Au、I n、Pd、I r、Sn、Fe、Mo、Co、Pb 及其混合 物所組成之群組。 · 2 2 · —種電氣用結構，其特徵在於包含一層的絕緣材 料與一層如申請專利範圍第1 8項之電氣抵抗材料。 2 3 ·如申請專利範圍第2 2項之結構，其中該層的電 氣抵抗材料爲具圖案的以提供至少一個分離的電氣抵抗材料 貼片。 2 4 ·如申請專利範圍第2 3項之結構，其中該結構更 包含在該貼片成空間分隔位置的裝置，以將電氣抵抗材料的 該貼片連接於電子電路。 2 5 ·如申請專利範圍第2 4項之結構，其更包含包埋 該電氣抵抗材料貼片與該連接裝置之絕緣材料。 2 6 ·如申請專利範圍第2 2項之結構，其中該電氣抵 抗材料層爲至少約4 〇 A厚。 2 7 .如申請專利範圍第2 2項之結構，其中該電氣抵 抗材料層係介於約4〇與約5 0，000A厚。 2 8 ·如申請專利範圍第2 2項之結構，其中該電氣抵 (請先閱讀背面之注意事項再填寫本頁) .裝‘ 訂 絲- 本紙張尺度適用中關家標準（CNS )八4胁（21QX297公羡） -3- 厶 A8 B8 C8 D8 、申請專利範圍 抵抗材料層係介於約1〇〇與約ι〇，〇〇〇A厚。 2 9 .如申請專利範圍第2 2項之結構，其中該電氣 抵抗材料層係介於約3 0 〇與約5 ◦ 〇 〇 A厚。 3 0 .如申請專利範圍第2 2項之結構，其係包埋於 絕緣材料中。 3 1 ·如申請專利範圍第2 2項之結構，其中該層絕 緣材料爲有機聚合物材料。 3 2 ·如申請專利範圍第2 2項之結構，其中該層絕 緣材料具有厚度約1〇微米或較低。 3 3·種兩層結構，其包含在金屬基質上的一層如 申請專利範圍第1 8項之抵抗材料。 3 4 ·如申請專利範圍第3 3項之二層結構，其中該 金屬基質爲金屬箔。 3 5 ·如申請專利範圍第3 3項之二層結構，其中該 金屬基質爲銅。 3 6 ·如申請專利範圍第3 5項之二層結構，其中該 金屬基質爲銅箔。 3 7 · —種電氣抵抗材料，其包含無定形氧化物，該 氧化物係選自由 B i 2 R u 2〇7及S r R u〇3所組成之群組。 3 8 · —種電氣抵抗材料組成物，其包含均質的混合 物，其中含有介於約80與約99·5wt%的申請專利 範圍第3 7項之無定形氧化物，及介於約〇 · 1與約2〇 w t %的介電材料或加強導電性材料。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ：4 - ------------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂·丨 經濟部智慧財產局員工消費合作社印製 492018 A8 B8 C8 D8 六、申請專利範圍 3 9 ·如申請專利範圍第3 8項之抵抗材料，其中該介 電材料爲金屬氧化物或準金屬氧化物。 4〇.如申請專利範圍第3 9項之抵抗材料，其中該金 屬氧化物或準金屬氧化物爲選自由氧化矽、氧化鋁、氧化鉻 、氧化鈦、及氧化鉻、磷氧化物、氧化鉍、稀土族氧化物及 其混合物所組成之群組。 4 1 _ 一種電氣用結構，其特徵在於包含一層的絕緣材 料與一層的如申請專利範圍第3 7項之電氣抵抗材料。 4 2 ·如申請專利範.圍第4 1項之結構’其中該層的電 氣抵抗材料爲具圖案的以提供至少一個分離的電氣抵抗材料 .貼片。 4 3 ·如申請專利範圍第4 2項之結構’其中該結構更 包含在該貼片上成空間分隔位置的裝置，以將電氣抵抗材料 的該貼片連接於電子電路。 4 4 .如申請專利範圍第4 3項之結構’其更包含包埋 該電氣抵抗材料貼片與該連接裝置的絕緣材料。 4 5 ..如申請專利範圍第4 1項之結構’其中該電氣抵 抗材料層爲至少約4 0 A厚。 4 6 .如申請專利範圍第4 1項之結構’其中該抵抗材 料層係介於約4 0與約5 0，0 0 0 A厚。 4 7 .如申請專利範圍第4 1項之結構’其中該抵抗材 料層係介於約1 0 0與約1 0，0 0 0 A厚。 4 8 .如申請專利範圍第4 1項之結構，其中該抵抗材 料層係介於約3 0 0及約5 0 0 0 A厚。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） --------裝— (請先閱讀背面之注意事項再填寫本頁) 、言 絲 經濟部智慧財產局員工消費合作社印製 10 A8 B8 C8 D8 六、申請專利範圍 4 9 ·如申請專利範圍第4 1項之結構，其係包埋於 絕緣材料中。 5 0 ·如申請專利範圍第4 1項之結構，其中該層絕 緣材料爲有機聚合物材料。 5 1 ·如申請專利範圍第4 1項之結構，其中該層絕 緣材料具有厚度約1 0微米或較低。 5 2 · —種包埋的電阻器結構，其包含一層的電氣抵 抗材料的貼片，其中包含導電性氧化物；在該貼片上成空 間分隔位置之裝置，.以將該抵抗材料之貼片連接於電子電 路’以及包埋該抵抗材料之貼片之絕緣材料與該連接方法 5 3 ·如申請專利範圍第5 2項之電阻器結構，其中 該抵抗材料包含均質的混合物，其中含有介於約8 Q與約 9 9 · 5 w t %的該導電性氧化物，及介於約〇 . 1 與約2 0 w t %的介電材料或加強導電性材料。 5 4 ·如申請專利範圍第5 2項之電阻器結構，其中 該介·電材料爲金屬氧化物或準金屬氧化物。 5 5 ·如申請專利範圍第5 2項之電阻器結構，其中 該導電性氧化物爲選自由B i2Ru2〇7、及S rRu〇3 所組成之群組。 5 6 ·如申請專利範圍第5 2項之電阻益結構，其中 該抵抗材料層爲至少約4 Ο A厚。 5 ‘ 7 ·如申請專利範圍第5 2項之電阻器結構，其中 該抵抗材料層係介於約4 0與約5 0 ’ 〇 〇 〇 A厚。 (請先閲讀背面之注意事項再填寫本頁) 訂--- 舞 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 6 492018 A8 B8 C8 D8 々、申請專利範圍 5 8 ·如申請專利範圍第5 2項之電阻器結構，其中 該抵抗材料層係介於約1 0 〇與約1 〇，〇 〇 〇 A厚。 5 9 ·如申請專利範圍第5 2項之電阻器結構，其中 該抵抗材料層係介於約3 0 0與約5 0 0 0A厚。 6 0 · —種電氣用結構，其特徵在於包含 a )—層的導電性材料，及 b ) —層黏附其上的電氣抵抗材料，該電氣抵抗材料 係帶有充分地多孔性以供液體蝕刻劑可擴散通過並破壞介 於該層a )與b )間之黏著。 6 1 ·如申請專利範圍第6 0項之結構，其係自立式 〇 6 2 ·如申請專利範圍第6 0項之結構，其中該層a )爲金屬箔。 6 3 ·如申請專利範圍第6 〇項之結構，其中該.導電 性材料層爲銅箔。 6 4 _如申請專利範圍第6 〇項之結構，其中該電氣 抵抗材料爲金屬攙添以介電材料。 6 5 .如申請專利範圍第6 4項之結構，其中該電氣 抵抗材料爲經攙添的鉑。 6 6 ·如申請專利範圍第6 4項之結構，其中該電氣 抵抗材料爲經攙添的鎳。 6 7 ·如申請專利範圍第6 〇項之結構，其中該電氣 抵抗材料爲導電性氧化物。 6 8 ·如申請專利範圍第6 〇項之結構，其中該電氣 本纸張尺度適用中國國家標準（CNS )八4現格（210X297公釐了 41-.裝— (靖先閑讀背面之注意事項再填寫本頁) 、tT 絲 經濟部智慧財產局員工消費合作社印製 492U18 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 抵抗材料係介於約4 〇與約5 〇，〇 6 9 · —種形成分離的電阻器之三層結構’其包含 金屬導電性層， 中間層形成材料其係可由化學蝕刻劑劣化的，及 -® S抗材·料其具有充分地多孔性，使用於蝕刻中間 ® @ ft ^ _刻劑可經該抵抗材料滲出且使該中間層化學劣 化’以使該抵抗材料可自該導電性層（該中間層被化學劣 化之導電性層）剝離。 7 0 ·如申請專利範圍第6 9項之三層結構，其中該 中間層係作爲障礙層，以防止材料自該導電性層擴散入該 抵抗材料層。 7 1 ·如申請專利範圍第6 9項之三層結構，其中該 中間層爲金屬。 了 2 ·如申請專利範圍第6 9項之三層結構’其中該 中間層爲鎳。 7 3 ·如申請專利範圍第6 9項之三層結構’其中該 中間·層係爲平均厚度介於約1 5與約5 0奈米之介電材料 0 7 4 ·如申請專利範圍第6 9項之三層結構’其中該 中間層爲氧化矽。 7 5 ·如申請專利範圍第6 9項之三層結構’其中該 中間層爲氧化緦。 7 6 ·如申請專利範圍第6 9項之三層結構’其中該 中間層爲氧化鎢。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱^ ^ 〇 0 A厚 (請先閱讀背面之注意事項再填寫本頁) 訂----- 秦 492018 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 7 7 ·如申請專利範圍第6 9項之三層結構，其中該 中間層爲氧化鋅。 7 8 · —種形成具圖案的抵抗材料層的方法，該抵抗 材料層係與一層的導電性材料作電性接觸，此方法包含， 提供一個三層結構其包含金屬導電性層；中間層其係 由化學餘刻劑可劣化的材料所形成；及一層抵抗·材料其具 充分地多孔性使該化學蝕刻劑（其係針對該中間層作用的 )可經該抵抗材料滲出且將該中間層作化學劣化，以使得 當該中間層被化學劣化時，該抵抗材料可自該導電性層剝 離， 在該抵抗材料層上形成具圖案的光罩層， 將該抵抗材料層暴露於該中間層所適用之該化學蝕刻 劑，以使該蝕刻劑滲過該多孔抵抗材料層並劣化該中間層 ，且 當該中間物層時劣化將部分的該抵抗材料層的剝離。 7 9 .如申請專利範圍第7 8項之方法，其中在該^ 層結構中，該中間層作爲障礙層以防止該導電性層之材料 擴散入該抵抗材料層。 8 0 ·如申請專利範圍第7 8項之方法，其中在該^ 層結構中，該中間層爲金屬。 8 1 ·如申請專利範圍第7 8項之方法，其中在該s 層結構中，該中間層爲鎳。 8 2 ·如申請專利範圍第7 8項之方法，其中在該^ 層結構中，該中間層爲陶瓷材料其平均厚度介於約1 5與 -------------------訂----------ί· (請先閱讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -9- 492018Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 492018 A8B8C8D8 VI. Scope of patent application 9. The resistor according to item 1 of the patent application range, wherein the metal is nickel and the dielectric material is a metal oxide or a metalloid oxide. 1 0. The resistor of item 9 in the scope of patent application, wherein the quasi-metal oxide is silicon oxide. 1 1 · The resistor according to item 9 of the patent application, wherein the metal oxide is alumina. 1 2. The resistor according to item 1 of the patent application range, wherein the resistor material of the layer is between about 40 and about 50,000 A thick. 1 3 · The resistor according to item 1 of the patent application range, wherein the resistor material is a material deposited by a combustion chemical vapor deposition method. 1 4 · The resistor in the scope of patent application No. 1 is embedded in an insulating material. 15 · The resistor according to item 1 of the patent application range, wherein the insulating substrate is an organic material. ^ 16 · The resistor according to item 1 of the patent application range, wherein the insulating substrate is about 10 microns or less thick. i 7 The resistor according to item 1 of the patent application range, wherein the insulating substrate has a thickness of about 10 micrometers to about 100 micrometers. 1 8 · An electrical resistance material comprising a homogeneous mixture, the mixture being between about 80 and about 9 9 · 5 wt% of a zero atomic metal or zero atomic metal alloy 'and between about 0 · 1 With about 200w to / ^ L% of the dielectric material. 1 9 · If you apply for electrical resistance materials in the scope of patent application No. 18, (please read the precautions on the back before filling this page) II ^ «II Tao printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Consumption Cooperative, this paper is suitable for China Standard (CNS) A4 specification (210 x 297 mm) -2-492018 A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application The dielectric material is metal oxide or metalloid oxide. 2 0. The electrical resistance material according to item 19 of the application, wherein the metal or metalloid oxide is selected from the group consisting of silicon oxide, aluminum oxide, chromium oxide, titanium oxide, hafnium oxide, zinc oxide, phosphorus oxide, and oxide. A group of bismuth, rare earth oxides, chromium oxide, and mixtures thereof. 2 1 · The electrical resistance material according to item 18 of the scope of patent application, wherein the metal or alloy is selected from the group consisting of Pt, Ni, Ag, Cu, Au, In, Pd, Ir, Sn, Fe, Mo, Co, A group of Pb and its mixtures. · 2 2 ·-An electrical structure, which is characterized by comprising a layer of insulating material and a layer of electrical resistance material such as the scope of patent application No. 18. 2 3 · The structure according to item 22 of the scope of the patent application, wherein the electrical resistance material of the layer is patterned to provide at least one discrete electrical resistance material patch. 2 4 · The structure according to item 23 of the scope of patent application, wherein the structure further includes a device in which the patch is spaced apart to connect the patch of the electrically resistive material to an electronic circuit. 25. If the structure of item 24 of the scope of patent application, it further includes an insulating material embedding the electrically resistive material patch and the connection device. 26. The structure according to item 22 of the scope of patent application, wherein the electrically resistive material layer is at least about 40 A thick. 27. The structure according to item 22 of the scope of patent application, wherein the electrically resistive material layer is between about 40 and about 50,000 A thick. 2 8 · If you apply for the structure of item 22 in the scope of patent application, where the electrical delivery (please read the precautions on the back before filling out this page). Packing 'Staple-This paper size applies the Zhongguanjia Standard (CNS) 8 4 Threat (21QX297 public envy) -3- 8 A8 B8 C8 D8, the patent application range resistance material layer is between about 100 and about 100,000 A thick. 29. The structure according to item 22 of the scope of patent application, wherein the electrically resistive material layer is between about 300 and about 5 A thick. 30. The structure according to item 22 of the scope of patent application is embedded in an insulating material. 3 1 · The structure according to item 22 of the scope of patent application, wherein the insulating material of the layer is an organic polymer material. 3 2 · The structure according to item 22 of the scope of patent application, wherein the layer of insulating material has a thickness of about 10 microns or less. 33. A two-layer structure comprising a layer on a metal substrate such as a resistive material in the 18th scope of the patent application. 3 4 · The two-layer structure according to item 33 of the patent application scope, wherein the metal substrate is a metal foil. 3 5 · The two-layer structure according to item 33 of the patent application scope, wherein the metal matrix is copper. 36. The two-layer structure according to item 35 of the patent application scope, wherein the metal substrate is a copper foil. 37. An electrical resistance material comprising an amorphous oxide selected from the group consisting of B i 2 R u 2 07 and S r R u 03. 38. An electrical resistive material composition comprising a homogeneous mixture containing an amorphous oxide between about 80 and about 99.5% by weight of the patented scope of item 37, and between about 0.1 With about 20wt% of dielectric material or reinforced conductive material. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm): 4------------- install --- (Please read the precautions on the back before filling this page ) 丨 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 492018 A8 B8 C8 D8 VI. Application for patent scope 39 9 If the patent application scope of the 38th resistance material, the dielectric material is metal oxide or standard Metal oxide. 40. The resistance material according to item 39 of the scope of patent application, wherein the metal oxide or metalloid oxide is selected from the group consisting of silicon oxide, aluminum oxide, chromium oxide, titanium oxide, and chromium oxide, phosphorus oxide, and bismuth oxide. , A group of rare earth oxides and their mixtures. 4 1 _ An electrical structure, which is characterized by comprising a layer of insulating material and a layer of electrical resistance material such as the item 37 in the scope of patent application. 4 2 · The structure surrounding item 41 as claimed in the patent application, wherein the electrical resistance material of the layer is patterned to provide at least one separate electrical resistance material. The patch. 4 3 · The structure according to item 42 of the scope of the patent application, wherein the structure further includes a device spaced apart on the patch to connect the patch of the electrically resistive material to an electronic circuit. 4 4. The structure according to item 43 of the scope of patent application, which further includes an insulating material embedding the electrically resistive material patch and the connection device. 4 5 .. The structure according to item 41 of the scope of patent application, wherein the electrically resistive material layer is at least about 40 A thick. 46. The structure according to item 41 of the scope of patent application, wherein the resistance material layer is between about 40 and about 50, 0 0 A thick. 47. The structure according to item 41 of the scope of the patent application, wherein the layer of resistive material is between about 100 and about 10, 0 0 A thick. 48. The structure according to item 41 of the scope of patent application, wherein the layer of resistive material is between about 300 and about 5000 A thick. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -------- install— (Please read the precautions on the back before filling this page), staff of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives 10 A8 B8 C8 D8 VI. Application scope of patent 4 9 · If the structure of the scope of patent application No. 41 is applied, it is embedded in insulating material. 50. The structure according to item 41 of the scope of patent application, wherein the insulating material of the layer is an organic polymer material. 5 1 · The structure according to item 41 of the scope of patent application, wherein the layer of insulating material has a thickness of about 10 microns or less. 5 2 · — An embedded resistor structure comprising a layer of a patch of electrically resistive material, which contains a conductive oxide; means for forming a spaced apart location on the patch to paste the resistive material The chip is connected to the electronic circuit, and the insulating material of the patch that embeds the resistance material and the connection method 5 3 · The resistor structure according to item 52 of the patent application scope, wherein the resistance material comprises a homogeneous mixture containing a dielectric At about 8 Q and about 99. 5 wt% of the conductive oxide, and between about 0.1 and about 20 wt% of the dielectric material or reinforced conductive material. 5 4 · The resistor structure according to item 52 of the patent application range, wherein the dielectric material is a metal oxide or a metalloid oxide. 5 5 · The resistor structure according to item 52 of the patent application range, wherein the conductive oxide is selected from the group consisting of B i2Ru2 07 and S rRu0 3. 56. The resistive structure as claimed in claim 52, wherein the resistive material layer is at least about 4 OA thick. 5 ‘7. The resistor structure according to item 52 of the patent application scope, wherein the resistive material layer is between about 40 and about 50 ′ 〇 〇 〇 A thick. (Please read the precautions on the back before filling this page) Order --- Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is applicable to China National Standard (CNS) A4 (210 X 297 public love) 6 492018 A8 B8 C8 D8 々, patent application scope 5 8 · The resistor structure of the patent application scope item 52, wherein the resistance material layer is between about 100 and about 10,000 A thick. 5 9 · The resistor structure according to item 52 of the patent application scope, wherein the resistive material layer is between about 300 and about 500 A thick. 6 0 · An electrical structure characterized by comprising a) a layer of conductive material, and b) a layer of electrically resistive material adhered thereto, the electrically resistive material having sufficient porosity for liquid etching The agent can diffuse through and break the adhesion between the layers a) and b). 6 1 · Structure according to item 60 of the scope of patent application, which is a free-standing structure 602 · Structure such as item 60 in the scope of patent application, wherein the layer a) is a metal foil. 63. The structure according to item 60 of the scope of patent application, wherein the conductive material layer is copper foil. 6 4 _ The structure according to item 60 of the scope of patent application, wherein the electrical resistance material is a metal with a dielectric material. 65. The structure according to item 64 of the scope of patent application, wherein the electrical resistance material is platinum which has been added. 6 6 · The structure according to item 64 of the scope of patent application, wherein the electrical resistance material is added nickel. 67. The structure as claimed in claim 60, wherein the electrically resistive material is a conductive oxide. 6 8 · If the structure of the scope of patent application No. 60, in which the paper size of the electrical paper is applicable to the Chinese National Standard (CNS) 8 (4) (210X297 mm 41-. Equipment-(Jing Xian leisurely read the attention on the back) Please fill in this page for further information), tT printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 492U18 A8 B8 C8 D8 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 〇, 〇6 9 · —Three-layer structure forming separate resistors' which includes a metal conductive layer, an intermediate layer forming material which can be degraded by a chemical etchant, and -S resist material which has sufficient Porosity, used in etching intermediate ® @ ft ^ _ can be exuded through the resist material and chemically degrade the intermediate layer 'so that the resist material can be from the conductive layer (the intermediate layer is chemically degraded conductive layer ) Peeling. 7 0. If the three-layer structure of item 69 of the patent application scope, wherein the intermediate layer is used as a barrier layer to prevent the material from diffusing from the conductive layer into the resistive material layer. 7 1 The three-layer structure surrounding item 6 9 in which the intermediate layer is a metal. 2 · If the three-layer structure in item 69 of the patent application 'wherein the intermediate layer is nickel. 7 3 · As in the scope of patent application 6 9 The three-layer structure of item 'wherein the intermediate layer is a dielectric material having an average thickness between about 15 and about 50 nm 0 7 4 The layer is silicon oxide. 7 5 · As the three-layer structure of the scope of the patent application No. 6 9 'wherein the intermediate layer is hafnium oxide. 7 6 · The three-layer structure of the scope of the patent application No. 6 9' where the intermediate layer is Tungsten oxide. This paper size is in accordance with Chinese National Standard (CNS) A4 specifications (210 X 297 public love ^ ^ 0 0 A thick (please read the precautions on the back before filling this page) Order ----- Qin 492018 Ministry of Economic Affairs Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau VI. Patent application scope 7 7 · For the three-layer structure of the patent application scope item 6 9, the intermediate layer is zinc oxide. 7 8 · — a kind of patterned Method of resistive material layer, the resistive material layer is conductive with one layer The material is electrically contacted. This method includes providing a three-layer structure including a metal conductive layer; an intermediate layer formed of a material that can be degraded by a chemical finish; and a layer of resistive material that is sufficiently porous so that The chemical etchant (which acts on the intermediate layer) can ooze out through the resistive material and chemically degrade the intermediate layer, so that when the intermediate layer is chemically deteriorated, the resistive material can be peeled from the conductive layer Forming a patterned photomask layer on the resist material layer, exposing the resist material layer to the chemical etchant suitable for the intermediate layer, so that the etchant penetrates the porous resist material layer and deteriorates the intermediate layer And, when the intermediate layer is deteriorated, part of the resist material layer is peeled off. 79. The method of claim 78, wherein in the layer structure, the intermediate layer serves as a barrier layer to prevent the material of the conductive layer from diffusing into the resist material layer. 80. The method of claim 78, wherein in the layer structure, the intermediate layer is a metal. 8 1 · The method according to item 78 of the scope of patent application, wherein in the s-layer structure, the intermediate layer is nickel. 8 2 · The method according to item 78 of the scope of patent application, wherein in the ^ layer structure, the intermediate layer is a ceramic material and the average thickness is between about 15 and ------------- ------ Order ---------- ί · (Please read the notes on the back before filling out this page} This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ) -9- 492018 劑爲鹽酸 A8 B8 C8 D8 請專利範 間層爲氧 請專利範 二贏化氫 請專利範 間層爲氧 請專利範 間層爲氧 請專利範 間層爲氧 請專利範 圍第7 8項之方法，其中 化砂。 圍第8 3 銨、氟硼 在該 項之方法，其中該蝕刻 酸、及其混合物所組成 圍第7 8項之方法，其中在該三 化緦。 圍第7 8項之方法，其中在·該三 化鶴。 圍第7 8項之方法，其中在該三 化鋅。 圍第8 7 (請先閲讀背面之注意事項再填寫本頁) 0, 裝 訂 經濟部智慧財產局員工消費合作社印製 8 9 _ —種形成一電阻器的方 基質，在該絕緣材料之上有一層電 電氣抵抗材料包含零原子價金屬或 介電材料之均質混合物，且一層的 間分隔位置之方式與該抵抗材料之 法包含， 在絕緣基質上，形成 在該抵抗材料層上，形成一層 層結構’該導電性材料係經選擇， 蝕刻該抵抗材料的該零原子價金屬 項之方法，其中該蝕刻 法’該電阻器包含絕緣 氣抵抗材料貼片，其中 零原子價金屬之合金與 導電性材料貼片係以空 貼片作電熱接觸，此方 一層該電氣抵抗材料， 的導電性材料以形成三 使存在第一蝕刻劑其可 及該導電性材料，與第 絲 -10 492018 A8 B8 C8 D8 々、申請專利範圍 二蝕刻劑其可選擇性地蝕刻該導電性材料而不會蝕刻該抵 抗材料之該零原子價金屬， (請先閱讀背面之注意事項再填寫本頁) 以光罩覆蓋該導電性材料層的選擇部分， 以該第一蝕刻劑蝕刻該三層結構以除去該導電性材料 層的暴露部分及該抵抗材料層的下面部分，以形成部分蝕 刻結構， 除去餘留光罩， 以光罩覆蓋該部分蝕刻結構的選擇部分，且 以該第二蝕刻劑蝕刻該部分蝕刻結構的該導電性之材 料層的暴露部分。 9〇· 一種形成一電阻器的方法，該電阻器包含絕緣 基質，在該絕緣材料之上有一層電氣抵抗材料貼片，其中 電氣抵抗材料包含零原子價金屬與介電材料之均質混合物 ’與一層的導電性材料貼片係以空間分隔位置之方式與該 抵抗材料之貼片作電氣接觸，此方法包含， 在絕緣基質上，形成一層該電氣抵抗材料， 經濟部智慧財產局員工消費合作社印製 •在該抵抗材料層上，形成一層的導電性材料以形成三 層結構，該導電性材料係經選擇，使存在第一蝕刻劑其可 蝕刻該抵抗材料的該零原子價金屬及該導電性材料，與第 二蝕刻劑其可選擇性地蝕刻該導電性材料而不會蝕刻該抵 抗材料之該零原子價金屬， 以光罩覆蓋該導電性材料層的選擇部分， 以該第一蝕刻劑蝕刻該三層結構以形成部分蝕刻結構 -11 - 本紙張尺度適用中國國家榇準（CNS ) A4規格（2ΐ〇χ297公釐） 492018 A8 B8 C8 D8 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 以光罩覆蓋該部分蝕刻結構的選擇部分，且 以該第一蝕刻劑蝕刻該部分蝕刻結構的該抵抗材料層 的暴露部分，以除去該抵抗材料層的暴露部分。 9 1 · 一種在絕緣基質上形成薄層電阻器的方法，其 包含， 提供一結構其包含絕緣基質與其上的一薄層的電氣抵 抗材料， 以光罩覆蓋該抵抗材料層的選擇部分， 以蝕刻除去該抵抗材料層的未覆蓋部分，以留下該絕 緣材料上的抵抗材料貼片， 除去餘留光罩， 在該抵抗材料之貼片上形成一層導電性材料， 覆蓋該導電性材料層的選擇空間分隔部分，及 使用不會蝕刻該抵抗材料之蝕刻劑，以蝕刻該導電性 層。 經濟部智慧財產局員工消費合作社印製 9 2 · —種形成一電阻器的方法，該電阻器包含絕緣 基質·，在該絕緣材料之上有一層電氣抵抗材料貼片，其中 電氣抵抗材料爲選自由B i2Ru2〇7及S rRu〇3所組 成之群組，與一層的導電性材料貼片係以空間分隔位置之 方式與該抵抗材料之貼片作電氣接觸，此方法包含， 在絕緣基質上，形成一層該電氣抵抗材料， 在該抵抗材料層上，形成一層的導電性材料以形成三 層結構’該導電性材料係經選擇，使存在第一蝕刻劑其可 蝕刻該抵抗材料及該導電性材料，與第二蝕刻劑其可選擇 -12- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部智慧財產局工消費合作社印製 492018 A8 B8 C8 D8 六、申請專利範圍 性地蝕刻該導電性材料而不會鈾刻該抵抗材料， 以光罩覆蓋該導電性材料層的選擇部分，. 使用該第一蝕刻劑蝕刻該三層結構，以除去該層導電 性材料的曝光部分與該抵抗材料層的下面部分以形成部分 蝕刻結構， 除去餘留光罩， 以光罩覆蓋該部分蝕刻結構的選擇部分，及 以該第二蝕刻劑蝕刻該部分蝕刻結構的該導電性材料 層曝光部分。 · 9 3 · —種形成一電阻器的方法，該電阻器包含絕緣 基質，在該絕緣材料之上有一層電氣抵抗材料貼片，其中 電氣抵抗材料爲選自由B i 2Ru2〇7及S r Ru〇3所 組成之群組，與一層的導電性材料貼片係以空間分隔位置 之方式與該抵抗材料之貼片作電氣接觸，此方法包含， 在絕緣基質上，形成一層該電氣抵抗材料， 在該抵抗材料層上，形成一層的導電性材料以形成三 層結構，該導電性材料係經選擇，使存在第一蝕刻劑其可 鈾刻該抵抗材料及該導電性材料，與第二蝕刻劑其可選擇 性地蝕刻該導電性材料而不會蝕刻該抵抗材料， 以光罩覆蓋該導電性材料層的選擇部分， 除去餘留光罩， 以光罩覆蓋該部分蝕刻結構的選擇部分，且 以該第一蝕刻劑蝕刻該部分蝕刻結構的該抵抗材料層^ 的暴露部分’以除去該抵抗材料層的暴露部分。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^ ho . 一 〜^^ (請先閱讀背面之注意事項再填寫本頁)The agent is hydrochloric acid A8, B8, C8, D8, please apply the patent interlayer for oxygen, apply for the patent, win two patents, hydrogen, apply for the patent interlayer, for oxygen, apply for the patent interlayer, and apply for patent. Method in which sand is removed. The method according to item 83, in which the ammonium and boron fluoride are in the item, wherein the method according to item 78 is in the hafnium trioxide. The method around item 78, in which the three cranes. The method surrounding item 78, wherein the zinc trioxide is used. Section 8 7 (Please read the precautions on the back before filling out this page) 0, bound by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives 9 9 _ — a square matrix forming a resistor, on top of the insulating material A layer of electrical and electrical resistance material includes a homogeneous mixture of zero atomic valence metals or dielectric materials, and the method of separating the layers and the method of the resistance material include forming on the insulating substrate on the layer of the resistance material to form a layer Structure 'The conductive material is a method selected to etch the zero atomic valent metal term of the resistive material, wherein the etching method' The resistor includes an insulating gas resistive material patch, in which the alloy of zero atomic valence metal is conductive The material patch is an empty patch for electrical and thermal contact. This layer is a layer of the electrically resistive material and a conductive material to form a third etching agent so that it can reach the conductive material, and the wire-10 492018 A8 B8 C8 D8. Patent application scope 2. Etchant that can selectively etch the conductive material without etching the zero atomic value of the resistive material Metal, (please read the precautions on the back before filling this page) cover the selected part of the conductive material layer with a photomask, and etch the three-layer structure with the first etchant to remove the exposed part of the conductive material layer and A lower portion of the resist material layer to form a partially etched structure, removing a remaining mask, covering a selected portion of the partially etched structure with a mask, and etching the conductive material of the partially etched structure with the second etchant The exposed part of the layer. 90. A method of forming a resistor, the resistor comprising an insulating matrix, a layer of electrically resistive material patches on the insulating material, wherein the electrically resistive material comprises a homogeneous mixture of a zero atomic valence metal and a dielectric material 'and A layer of conductive material patch is in electrical contact with the resistive material patch in a spaced-apart manner. This method includes forming a layer of the electrical resistive material on an insulating substrate, printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. • On the resist material layer, a layer of conductive material is formed to form a three-layer structure. The conductive material is selected so that a first etchant is present which can etch the zero atomic valence metal of the resist material and the conductivity. And a second etchant that can selectively etch the conductive material without etching the zero atomic valence metal of the resistive material, cover a selected portion of the conductive material layer with a photomask, and use the first etch Agent to etch the three-layer structure to form a partially etched structure-11-This paper size is applicable to China National Standard (CNS) A4 specification (2 ΐ〇χ297mm) 492018 A8 B8 C8 D8 6. Scope of patent application (please read the precautions on the back before filling this page) Cover the selected part of the etching structure with a photomask, and etch the part with the first etchant The exposed portion of the resist material layer is partially etched to remove the exposed portion of the resist material layer. 9 1 · A method for forming a thin-layer resistor on an insulating substrate, comprising: providing a structure including an insulating substrate and a thin layer of an electrically resistive material thereon; covering a selected portion of the resistive material layer with a photomask; The uncovered part of the resistive material layer is removed by etching to leave a resistive material patch on the insulating material, a remaining photomask is removed, and a conductive material is formed on the resistive material patch to cover the conductive material layer. The space is separated, and an etchant that does not etch the resist material is used to etch the conductive layer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 9 2-A method of forming a resistor, the resistor includes an insulating matrix, and there is a layer of electrically resistive material patch on the insulating material, of which the electrically resistive material is selected The group consisting of B i2Ru2〇7 and S rRu〇3 makes electrical contact with a layer of conductive material in a spaced-apart manner with a layer of conductive material patch. This method includes, on an insulating substrate, To form a layer of the electrical resistance material, and on the resistance material layer, form a layer of conductive material to form a three-layer structure. The conductive material is selected so that the presence of a first etchant can etch the resistance material and the conductive material Materials, and the second etchant can be selected -12- This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) Printed by the Industrial and Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 492018 A8 B8 C8 D8 Scopely etch the conductive material without uranium etch the resist material, cover a selected portion of the conductive material layer with a photomask, use the An etchant etches the three-layer structure to remove the exposed portion of the conductive material layer and the lower portion of the resist material layer to form a partially etched structure, removes the remaining photomask, and covers a selected portion of the partially etched structure with a photomask. And etching the exposed portion of the conductive material layer of the partially etched structure with the second etchant. · 9 3 · —A method for forming a resistor, the resistor includes an insulating substrate, and a layer of an electrically resistive material patch is placed on the insulating material, wherein the electrically resistive material is selected from the group consisting of B i 2Ru 2 07 and S r Ru The group of 〇3 and the layer of conductive material patch are in electrical contact with the patch of the resistive material in a spaced apart manner. This method includes forming a layer of the electrical resistive material on an insulating substrate. On the resist material layer, a layer of conductive material is formed to form a three-layer structure. The conductive material is selected so that the presence of a first etchant can etch the resist material and the conductive material, and a second etch. It can selectively etch the conductive material without etching the resistive material, cover a selected portion of the conductive material layer with a photomask, remove the remaining photomask, and cover a selected portion of the etched structure with a photomask. The exposed portion of the resist material layer ^ of the partially etched structure is etched with the first etchant to remove the exposed portion of the resist material layer. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) ^ ho. 1 ~ ^^ (Please read the precautions on the back before filling this page) 492018 8 8 8 8 ABCD 六、申請專利範圍 (請先閎讀背面之注意事項再填寫本頁) 9 4 · 一種形成一電阻器的方法，該電阻器包含電氣 抵抗材料貼片，與一層的導電性材料貼片係以空間分隔位 置之方式與該抵抗材料之貼片作電氣接觸，此方法包含， a)提供金屬箔層， b )提供一層的電氣抵抗材料其黏著於該金屬箔 c) 以光罩覆蓋該電氣抵抗材料層的選擇部分， d) 自該金屬箔層蝕刻該電氣抵抗材料層的末覆蓋部 分， e )除去餘留光罩， f )在該結構抵抗材料邊積層一片聚合物支撐材料 g )以光罩覆蓋該金屬箔層的選擇部分，及 h )蝕刻該箔層的未覆蓋部分。 9 5 ·如申請專利範圍第9 4項之方法，其中在階段 d )之前，·對該金屬箔層曝光表面提供一保護層，且在階 段g )之前某些點將該保護層移除。 經濟部智慧財產局員工消費合作社印製 •9 6 ·如申請專利範圍第9 4項之方法，其中該金屬 箱層爲銅。 9 7 ·如申請專利範圍第9 4項之方法，其中該電氣 保護層爲金屬攙添以介電材料。 9 8 ·如申請專利範圍第9 4項之方法，其中該抵抗 材料層爲經攙添之鉑。 9 9 ·如申請專利範圍第9 4項之方法，其中該抵抗 材料層爲經攙添之鎳。 -14- 本紙張尺度適用中國國家標準（CNS ) M規格（2ι〇Χ297公釐） 492018 A8 B8 C8 Ό6 六、申請專利範圍 1〇0 ·如申請專利範圍第9 4項之方法，其中該抵 抗材料層爲導電性氧化物。 (請先閎讀背面之注意事項再填寫本頁) 1 0 1 ·如申請專利範圍第9 4項之方法，其中該抵 抗材料層爲充分地多孔使蝕刻劑可擴散經該抵抗材料層， 並充分地損傷該金屬箔層與該電氣抵抗材料層之黏著，自 該金屬箔剝離該抵抗材料層的蝕刻暴露部分。 1 0 2 ·如申請專利範圍第1 0 1項之方法，其中該 抵抗材料層爲經攙添之鉑。 1〇3 ·如申請專利範圍第1 0 1項之方法，其中該 抵抗材料層爲經攙添之鎳。 1 0 4 ·如申請專利範圍第1 〇 1項之方法，其中該 金屬范層爲銅。 1〇5 ·如申請專利範圍第1 0 4項之方法，其中該 銅金屬箔層之表面係經氧化。 1 0 6 · —種在絕緣基質上形成抵抗材料圖樣的方法 ，其包含， 經濟部智慧財產局員工消費合作社印製 在該絕緣基質上提供一層抵抗材料，該抵抗材料係充 分地多孔使蝕刻劑可擴散經該抵抗材料層且損傷該抵抗材 料對該絕緣基質之黏著， 以光罩覆蓋該抵抗材料層的選擇部分，並將該抵抗材 料層的未覆蓋部分施以蝕刻劑，該蝕刻劑將損傷介於該抵 抗材料與該絕緣基質間之黏著。 1〇7 .如申請專利範圍第1 0 6項之方法，其中該 抵抗材料爲經攙添之鉑。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X：297公釐） -15- 492018 8 8 8 8 ABCD 六、申請專利範圍 1 0 8 ·如申請專利範圍第1 〇 6項之方法，其中該 抵抗材料爲經攙添之鎳。 1〇9 · 一種形成電氣抵抗材料（其中包含均質導電 性金屬與金屬氧化物或準金屬氧化物之混合物）之前驅物 溶液’該溶液包含第一前驅物化學藥品，當施以火焰燃燒 控制氣壓燃燒化學蒸汽沉積時其可產生零原子價金屬，第 二前驅物化學藥品，當施以火焰燃燒其可產生金屬氧化物 與準金屬氧化物；及一或更多溶劑，其中該第一與第二前 驅物化學藥品係互相可溶的，將該第一與第二前驅物化學 藥品以介於約〇 · 〇 〇 5與約2 0 w t %之濃度溶於該溶 液中。 1 1 0 ·如申請專利範圍第1 〇 9項之前驅物溶液， 其中該第一前驅物化學藥品爲沉積鉑且該第二含氧化矽前 驅物化學藥品沉積二氧化矽。 1 1 1 ·如申請專利範圍第1 1 〇項之前驅物溶液， 其中該含鉑前驅物爲選自由鉑（I I )—乙醯基丙酮化物及 二苯·基一（1，5 —環辛二燃）鉑（I I )所組成之群組 〇 1 1 2 ·如申請專利範圍第1 〇 9項之前驅物溶液， 其中該含矽前驅物爲四乙氧基矽烷。 1 1 3 ·如申請專利範圍第1 〇 9項之前驅物溶液， 其中總該前驅物溶液之濃度係介於約0 . 0 0 5 w t %與 約5 %。 1 1 4 .如申請專利範圍第1 0 9項之前驅物溶液， 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、νά. 經濟部智慧財產局員工消費合作社印製 -16- 492018 8 8 8 8 ABCD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 其中則驅物化學藥品係溶於一溶劑，該溶劑係選擇自甲苯 、異丙醇、甲醇、二甲苯、及其混合物由所組成之群組， 且其中則驅物化學藥品之總濃度係介於約q . 2 5與約5 w t % 〇 1 1 5 ·如申請專利範圍第1 1 4項之前驅物溶液， 其係經以丙烷稀釋至介於約0 · 〇 〇 5及約1 . 〇 w t % 之濃度。 1 1 6 · —種形成電氣抵抗材料之前驅物溶液，當施 以火焰燃燒或控制氣壓燃燒化學蒸汽沉積時產生導電性金 屬氧化物其帶有充分的電阻用作電阻器，該溶液包含提供 該導電性氧化物之非氧元素的前驅物化學化合物，所提供 之該前驅物化學化合物係採一相對比例，以在火焰燃燒條 件下形成導電性氧化物。 1 1 7 ·如申請專利範圍第1 1 6項之前驅物溶液， 其更提供額外的前驅物化學化合物溶於該溶液，其額外的 則驅物化學化合物虽施以火焰燃燒時可產生介電金屬氧化 物或準金屬氧化物，該第三前驅物化學化合物所提供之量 係使沉積抵抗材料包含介於約8 0與約9 9 . 9 w t %的 該導電性氧化物及介於約0 · 1與約2 0 w t %的該介電 金屬氧化物或準金屬氧化物。 1 1 8 ·如申請專利範圍第1 1 7項之前驅物溶液， 其更提供第三前驅物化學化合物溶於該溶液，其第三前驅 物化學化合物當施以火焰燃燒時可產生加強導電性材料， 該第三前驅物化學化合物所提供之量係使沉積抵抗材料包 本紙浪尺度適用中國國家標準（CNS ) A4規格（2[0X297公釐） ~~ (請先閱讀背面之注意事項再填寫本頁)492018 8 8 8 8 ABCD 6. Scope of patent application (please read the precautions on the back before filling out this page) 9 4 · A method of forming a resistor, which includes a patch of electrically resistant material and a layer of conductive The conductive material patch is in electrical contact with the resistive material patch in a spaced apart manner. This method includes: a) providing a metal foil layer, b) providing a layer of electrical resistive material that adheres to the metal foil c) to A photomask covers a selected portion of the electrically resistive material layer, d) etches the last covered portion of the electrically resistive material layer from the metal foil layer, e) removes the remaining photomask, and f) laminates a polymer on the structure resistive material The supporting material g) covers a selected portion of the metal foil layer with a photomask, and h) etches the uncovered portion of the foil layer. 95. The method according to item 94 of the scope of patent application, wherein before the phase d), a protective layer is provided on the exposed surface of the metal foil layer, and the protective layer is removed at some points before the phase g). Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs • 9 6 • If the method in the scope of patent application No. 94 is applied, the metal box layer is copper. 97. The method according to item 94 of the patent application scope, wherein the electrical protection layer is made of a metal with a dielectric material. 98. The method according to item 94 of the patent application scope, wherein the resistive material layer is a platinum added. 9 9 · The method according to item 94 of the scope of patent application, wherein the resist material layer is added nickel. -14- The size of this paper is applicable to Chinese National Standard (CNS) M specification (2 × 297mm) 492018 A8 B8 C8 6 6. Application for Patent Scope 100: If the method for the application of Item 94 of the patent scope, where the resistance The material layer is a conductive oxide. (Please read the precautions on the reverse side before filling out this page) 1 0 1 · If the method of the scope of patent application No. 94, the resist material layer is sufficiently porous so that the etchant can diffuse through the resist material layer, and Adhesion of the metal foil layer and the electrical resistance material layer is sufficiently damaged, and the etch-exposed portion of the resistance material layer is peeled from the metal foil. 1 0 2 · The method according to item 101 of the patent application range, wherein the resistance material layer is platinum added with a tin. 101. The method according to item 101 of the patent application range, wherein the resist material layer is nickel added. 104. The method of claim 101, wherein the metal layer is copper. 105. The method of claim 104, wherein the surface of the copper metal foil layer is oxidized. 1 0 6 · A method of forming a resist material pattern on an insulating substrate, comprising: printing on the insulating substrate by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to provide a layer of resist material, the resist material is sufficiently porous to make an etchant It can diffuse through the resist material layer and damage the adhesion of the resist material to the insulating substrate, cover a selected portion of the resist material layer with a photomask, and apply an etchant to the uncovered portion of the resist material layer. The etchant will The damage is between the resistance material and the insulating matrix. 107. The method according to item 106 of the patent application range, wherein the resistive material is platinum added by way of addition. This paper size applies to China National Standard (CNS) A4 specification (210X: 297 mm) -15- 492018 8 8 8 8 ABCD VI. Application scope of patent 1 0 8 · If the method of the scope of patent application No. 106, among which The resistant material is nickel. 109 · A precursor solution that forms an electrically resistant material containing a mixture of homogeneous conductive metals and metal oxides or metalloid oxides. The solution contains the first precursor chemical, which is controlled by flame combustion It can produce zero atomic valence metal when it is burnt by chemical vapor deposition, and a second precursor chemical, which can produce metal oxides and metalloid metal oxides when flame is applied; and one or more solvents, wherein the first and the first The two precursor chemicals are mutually soluble, and the first and second precursor chemicals are dissolved in the solution at a concentration between about 0.0005 and about 20 wt%. 1 1 0. The precursor solution according to item 109 of the patent application scope, wherein the first precursor chemical deposits platinum and the second silicon oxide precursor chemical deposits silicon dioxide. 1 1 1 · The precursor solution according to item 110 of the scope of patent application, wherein the platinum-containing precursor is selected from the group consisting of platinum (II) -acetamidoacetone and diphenyl · yl-1 (1,5-cyclooctane Group II composed of platinum (II) 〇 1 12 · For example, the precursor solution of the scope of application for patent No. 109, wherein the silicon-containing precursor is tetraethoxysilane. 1 1 3. As described in the patent application scope of the precursor solution, the total concentration of the precursor solution is between about 0.05% and about 5%. 1 1 4. For the precursor solution of item 109 in the scope of patent application, the size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling this page), νά Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-16- 492018 8 8 8 8 ABCD Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs It is selected from the group consisting of toluene, isopropanol, methanol, xylene, and mixtures thereof, and the total concentration of the flooding chemicals is between about q. 2 5 and about 5 wt% 〇 1 1 5 · For example, the precursor solution No. 114 in the scope of patent application, which is diluted with propane to a concentration between about 0.005 and about 1.0 wt%. 1 1 6 · — A precursor solution for forming an electrically resistive material that produces a conductive metal oxide when chemically deposited by flame combustion or controlled pressure combustion. It has sufficient resistance to act as a resistor. Non-oxygen precursor chemical compounds of conductive oxides. The precursor chemical compounds are provided in a relative proportion to form conductive oxides under flame combustion conditions. 1 1 7 · If the precursor solution of item 116 of the patent application scope, it also provides additional precursor chemical compounds dissolved in the solution, while the additional precursor chemical compounds can generate dielectric properties when flame is applied. Metal oxide or metalloid oxide, the third precursor chemical compound is provided in an amount such that the deposition resistant material comprises between about 80 and about 9.9 wt% of the conductive oxide and between about 0 1 and about 20 wt% of the dielectric metal oxide or metalloid oxide. 1 1 8 · If the precursor solution of item 11 of the scope of the application for a patent, it also provides a third precursor chemical compound dissolved in the solution, and the third precursor chemical compound can enhance the conductivity when applied by flame combustion Material, the amount of the third precursor chemical compound is provided so that the paper size of the deposition resistance material package applies the Chinese National Standard (CNS) A4 specification (2 [0X297 mm) ~~ (Please read the precautions on the back before filling (This page) 經濟部智慧財產局員工消費合作社印製 492018 A8 B8 C8 ___ D8 六、申請專利範圍 含介於約8 0與約9 9 · 9 w t %的該導電性氧化物及介 於約0 · 1與約2 0 w t %的該加強導電性材料。 1 1 9 ·如申請專利範圍第1 1 了項之前驅物溶液， 其中前驅物化學藥品之總濃度係介於約〇 · 2 5與約5 w t % 〇 1 2 0 ·如申請專利範圍第1 1 9項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於約〇·〇〇5與約1 . 0 w t %。 1 2 1 ·如申請專利範圍第1 1 7項之前驅物溶液， 其中前驅物化學藥品之總濃度係介於約〇 . 〇 〇 1與約 0 · 2 5 w t %。 1 2 2 ·如申請專利範圍第1 2 1項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於約〇· 0 0 5與約1 · 0 w t %。 1 2 3 .如申請專利範圍第1 1 8項之前驅物溶液， 其中前驅物化學藥品之總濃度係介於約0 . 2 5與約5 w t ·% 〇 1 2 4 .如申請專利範圍第1 2 3項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度係於〇·〇〇5及與約1 · 0 w t %。 1 2 5 . —種形成電氣抵抗材料之前驅物溶液，當施 以火焰燃燒或控制氣壓燃燒化學蒸汽沉積時產生 B 1 2 R u 2〇7，該溶液包含提供第一含81化學前驅物 化合物與第二含R u化學前驅物化合物；及一或更多溶劑 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _ 18 · (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 492018 A8 B8 C8 ___ D8 VI. The scope of patent application includes the conductive oxide between approximately 80 and approximately 9 · 9 wt% and between approximately 0.1 and approximately 20 wt% of this reinforced conductive material. 1 1 9 · As for the precursor solution of item 11 in the scope of patent application, wherein the total concentration of precursor chemicals is between about 0.25 and about 5 wt% 〇 1 2 0 · as in the scope of patent application No. 1 19. The precursor solution, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemicals is between about 0.005 and about 1.0 wt%. 1 2 1 · The precursor solution according to item 11 of the scope of patent application, wherein the total concentration of the precursor chemicals is between about 0.001 and about 0.25 wt%. 1 2 2 · The precursor solution according to item 121 of the scope of patent application, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemicals is between about 0.005 and about 1.0 wt% . 1 2 3. For the precursor solution of item 118 in the scope of the patent application, wherein the total concentration of the precursor chemicals is between about 0.25 and about 5 wt.% 〇1 24. 1 2 3 precursor solution, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemicals is 0.005 and about 1.0 wt%. 1 2 5. — A precursor solution for forming an electrically resistive material that produces B 1 2 R u 2 07 when chemical vapor deposition is applied by flame combustion or controlled pressure combustion. The solution contains a first chemical compound containing 81 precursors. And the second Ru-containing chemical precursor compound; and one or more solvents. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 18 · (Please read the precautions on the back before filling this page) 492018 ABCD 六、申請專利範圍 其中該第一與第二前驅物化學化合物係互相可溶的，所提 供該第一與第二前驅物化學化合物其相對比例係使在火焰 燃燒條件下可形成B i 2 R u ‘2〇7。 1 2 6 .如申請專利範圍第1 2 5項之前驅物溶液， 其更提供第三前驅物化學化合物溶於該溶液，其第三前驅 物化學化合物當施以火焰燃燒時可產生介電金屬氧化物或 準金屬氧化物，該第三前驅物化學化合物所提供之量係使 沉積抵抗材料包含介於約8 0與約9 9 · 9 w t %的 B i2Ru2〇7及介於約〇 · 1與約2〇wt%的該介電 金屬氧化物或準金屬氧化物。 1 2 7 ·如申請專利範圍第1 2 5項之前驅物溶液， 其更提供第三前驅物化學化合物溶於該溶液，其第三前驅 物化學化合物當施以火焰燃燒時可產生加強導電性材料， 該第三前驅物化學化合物所提供之量係使沉積抵抗材料包 含介於約80與約99 · 的B i2RU2〇7及介 於約0 · 1與約2 0 w t %的該加強導電性材料。 •1 2 8 .如申請專利範圍桌1 2 5項之前驅物溶液， 其中前驅物化學藥品之總濃度介於約〇 . 2 5與約5 w t %。 1 2 9 ·如申請專利範圍桌1 2 8項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於約0 . 〇 〇 5與約1 · 〇 w t %。 1 3 0 ·如申請專利範圍第1 2 6項之前驅物溶液， 其中前驅物化學藥品之總濃度係介於約〇 . 2 5與約 本紙張尺度適用中國國家標隼（CNS ) A4規格（210 X 297公釐） (請先閎讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消f合作社印製 •19- 492018 A8 B8 C8 D8 六、申請專利範圍 · 〇.5 w t % 〇 1 3 1 ·如申請專利範圍第1 3 〇項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於約〇·〇〇5與約1 ·〇w t %。 1 3 2 ·如申請專利範圍第1 2 7項之前驅物溶液， 其中前驅物化學藥品.之總濃度係介於約0 · 2 5與約5 w t %。 1 3 3 ·如申請專利範圍第1 3 2項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於0 · 0〇5與約1 · 〇wt%。 1 3 4 . —種形成電氣抵抗材料之前驅物溶液，當施 以火焰燃燒或控制氣壓燃燒化學蒸汽沉積時產生S r R u 〇3，該溶液包含提供第一含S r化學前驅物化合物與第二 含R u化學前驅物化合物；及一或更多溶劑其中該第一與 第二前驅物化學化合物係互相可溶的，所提供該第一與第 二前驅物化學化合物其相對比例係使在火焰燃燒條件下可 形成· S r R u〇3。 1 3 5 .如申請專利範圍第1 3 4項之前驅物溶液， 其更提供第三前驅物化學化合物溶於該溶液，其第三前驅 物化學化合物當施以火焰燃燒時可產生介電金屬氧化物或 準金屬氧化物，該第三前驅物化學化合物所提供之量係使 沉積抵抗材料包含介於約8 0與約9 9 . 9 w t %的 3]：1111〇3及介於約0.1與約2 0〜1%的該介電金屬 氧化物或準金屬氧化物。 本紙張尺度適用中國國家揉準（匸奶）八4規格（210父297公|) (請先閱讀背面之注意事項再填寫本頁) 、言· 經濟部智慧財產局員工消費合作社印製 -20- 492018 A8 B8 C8 D8 六、申請專利範圍 1 3 6 ·如申請專利範圍第1 3 4項之前驅物溶液， (請先閣讀背面之注意事項再填寫本頁) 其更提供第三前驅物化學化合物溶於該溶液’其第三前驅 物化學化合物當施以火焰燃燒時可產生加強導電性材料’ 該第三前驅物化學化合物所提供之量係使沉積抵抗材料包 含介於約80與約99 ·9wt%的SrRu〇3及介於約 〇.1與約2 0 w t · %的該加強導電性材料。 1 3 7 ·如申請專利範圍第1 3 4項之前驅物溶液， 其中前驅物化學藥品之總濃度係介於約0 · 2 5與約5 w t %。 1 3 8 ·如申請專利範圍第1 3 7項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於約0 ·〇〇5與約1 ·〇w t %。 1 3 9 ·如申請專利範圍第1 3 5項之前驅物溶液’ 其中前驅物化學藥品之總濃度介於約0 · 2 5與約5 w t %。 1 4 0 ·如申請專利範圍第1 3 9項之前驅物溶液， 經濟部智慧財產局員工消費合作社印製 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於約0 · 0〇5與約1 . 0 w t %。 1 4 1 ·如申請專利範圍第1 3 6項之前驅物溶液， 其中前驅物化學藥品之總濃度係介於約0 · 2 5與約5 w t %。 1 4 2 ·如申請專利範圍第1 4 1項之前驅物溶液， 其中該前驅物溶液經以丙烷稀釋使前驅物化學藥品之總濃 度介於約0 · 0 0 5與約1 . 0 w t %。 -21 - 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 492018 A8 B8 C8 D8 十、、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 1 4 3 . —種前驅物溶液，其在施以火焰燃燒或控制 氣壓燃燒化學蒸汽沉積時，可產生鎳或經攙添的鎳沉積， 該溶液包含 高達約4 0 w t %水， 至少約6 0 w t %高達約1 〇 0 w t %液化氨或液化 N 2〇作爲溶劑， 及介於約0 · 0 0 1與約0 . 1 W t %化學前驅物總 量的鎳或鎳加摻雜物。 1 4 4 ·如申請專利範圍第1 4 3項之前驅物溶液， 其含有至少約2 w t %的水。 1 4 5 ·如申請專利範圍第1 4 3項之前驅物溶液， 其含有介於約2與約2 0 w t %的水。 1 4 6 ·如申請專利範圍第1 4 3項之前驅物溶液， 其中該溶劑爲液化氨。 1 4 7 ·如申請專利範圍第1 4 3項之前驅物溶液’ 其中該溶劑爲液化N 2〇。 •1 4 8 .如申請專利範圍第1 4 3項之前驅物溶液’ 經濟部智慧財產局員工消費合作社印製 其中鎳的化學前驅物爲硝酸鎳。 1 4 9 .如申請專利範圍第1 4 3項之前驅物溶液， 其含有磷酸作爲磷化合物摻雜物之化學前驅物。 1 5 0 .如申請專利範圍第1 4 3項之前驅物溶液， 其含有元素之硝酸鹽（該元素係由S r、B i 、A1 、 M g、稀土族元素、及其混合物所組成）作爲攙添該鎳沉 積之化學前驅物。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董）-22 - 492018 A8 B8 C8 D8 ^、申請專利範圍 151·—種形成分離的電阻器的方法，其包含 提供一絕緣基質， 在該基質上提供一層電氣抵抗材料，該抵抗材料包含 貴金屬與介電材料之均質混合物， 以光罩覆盖該抵抗材料層的選擇部分，該光罩係對王 水具化學惰性’而使該抵抗材料層的選擇部分暴露於王水 ， 以王水蝕刻該抵抗材料層的暴露部分以在該基質上留 下一貼片的該抵抗材料層，且 提供連接該貼片於電子電路之方法。 1 5 2 ·如申請專利範圍第1 5 1項之方法，其中該 貴金屬爲i白。 1 5 3 ·如申請專利範圍第1 5 1項之方法，其中該 介電材料爲金屬氧化物或準金屬氧化物。 1 5 4 ·如申請專利範圍第1 5 3項之方法，其中該 介電材料爲氧化砂。 • 1 5 5 ·如申請專利範圍第1 5 3項之方法，其中該 介電材料爲氧化銘。 1 5 6 ·如申請專利範圍第1 5 1項之方法’其中·該 抵抗材料層由燃燒化學蒸汽沉積而形成° 1 5 7 ·如申請專利範圍第1 5 1項之方法’其更將 該層抵抗材料貼片包埋在一絕緣材料中° 15 8 ·如申請專利範圍第1 5 1項之方法’其中該 絕緣基質爲有機聚合物。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -23- (請先閱讀背面之注意事項再填寫本頁) 、-° 經濟部智慧財產局員工消費合作社印製 I 492018 A8 B8 C8 D8 六、申請專利範圍 1 5 9 ·如申請專利範圍第1 5 1項之方法，其中該 絕緣基質爲有機聚合物薄膜其厚度約1 〇微米或較低。 (請先閲讀背面之注意事項再填寫本頁) 1 6 0 •—種形成電阻器的方法，該電阻器包含絕緣 基質’在該絕緣材料上有一層的抵抗材料之貼片，（該抵 抗材料包含貴金屬與介電材料之均質的混合物），及一層 的導電性材料貼片（.其係與該抵抗材料之貼片以空間分隔 位置作電氣接觸），此方法包含.， 在絕緣基質上，形成一層的抵抗材料， 在該抵抗材料層上，形成一層的導電性材料以形成三 層結構， 以光罩覆蓋該導電性材料層的選擇部分， 以王水蝕刻該三層結構以除去該導電性材料層的暴露 部分及該抵抗材料層的下面部分，以形成部分蝕刻結構， 除去餘留光罩， 經濟部智慧財產局員工消費合作社印製 以光罩覆蓋該部分蝕刻結構的選擇部分，且 使用可選擇性地蝕刻該導電性材料層但不蝕刻該抵抗 材料層之蝕刻劑，蝕刻該部分飩刻結構之該導電性材料層 的暴露部分。 1 6 1 . —種形成電阻器的方法，該電阻器包含絕緣 基質，在該絕緣材料上有一層的抵抗材料之貼片，其中抵 抗材料包含貴金屬與介電材料之均質的混合物，及一層的 導電性材料貼片其係與該抵抗材料之貼片以空間分隔位置 作電氣接觸，此方法包含， 在絕緣基質上，形成一層的抵抗材料， 本紙張又度適用中國國家標準（CNS ) A4規格（210X297公釐1 ~ A8 B8 C8 D8 六、申請專利範圍 * 在該抵抗材料層上，形成一層的導電性材料以形成三 層結構， 以光罩覆蓋該導電性材料層的選擇部分， 使用可選擇性地蝕刻該導電性材料層但不蝕刻該抵抗 材料層之蝕刻劑，蝕刻該三層結構以形成部分蝕刻結構， 以光罩覆蓋該部分蝕刻結構的選擇部分，且 以王水蝕刻該部分蝕刻結構之該導電性材料層的暴露 部分，以除去該抵抗材料層的暴露部分。 ----------¢1.------、玎 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張·尺度適用中國國家標準（CNS ) A4規格（210X297公釐） · 25 .492018 ABCD 6. Scope of patent application Where the first and second precursor chemical compounds are mutually soluble, the relative proportions of the first and second precursor chemical compounds provided are such that B i can be formed under flame combustion conditions 2 R u '207. 1 2 6. If the precursor solution No. 125 of the scope of patent application, it also provides a third precursor chemical compound dissolved in the solution, and the third precursor chemical compound can generate a dielectric metal when the flame is applied. Oxide or metalloid oxide, the third precursor chemical compound is provided in an amount such that the deposition resistant material contains between about 80 and about 9.9 wt% B i2Ru207 and between about 0.1 With about 20 wt% of the dielectric metal oxide or metalloid oxide. 1 2 7 · If the solution of the precursor of item No. 125 in the scope of the application for a patent, it further provides a third precursor chemical compound dissolved in the solution, and the third precursor chemical compound can produce enhanced conductivity when applied by flame combustion Material, the third precursor chemical compound is provided in an amount such that the deposition resistance material comprises Bi 802 207 between about 80 and about 99 · and the enhanced conductivity between about 0.1 and about 20 wt% material. • 1 2 8. As in the patent application scope table 1 25 precursor solution, the total concentration of precursor chemicals is between about 0.25 and about 5 wt%. 1 2 9 · Precursor solution according to item 128 of the patent application table, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemical is between about 0.05 and about 1.0 wt% . 1 3 0 • If the precursor solution of item No. 126 in the scope of the patent application, the total concentration of precursor chemicals is between about 0.25 and about this paper size Applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) (Please read the notes on the back before filling this page) Order printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the cooperative • 19- 492018 A8 B8 C8 D8 VI. Patent Application Scope · 0.5 wt. % 〇 1 3 1 · As for the precursor solution No. 130 in the scope of patent application, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemicals is between about 0.005 and about 1.0 wt%. 1 3 2 · The precursor solution according to item 1 27 of the scope of patent application, wherein the total concentration of the precursor chemicals is between about 0.25 and about 5 wt%. 1 3 3. The precursor solution according to item 132 of the scope of the patent application, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemicals is between 0.0005 and about 1.0 wt%. 1 3 4. A precursor solution for forming an electrically resistive material, which produces S r R u 〇3 when flame combustion or controlled pressure combustion is applied to chemical vapor deposition. The solution contains a first S r -containing chemical precursor compound and A second Ru-containing chemical precursor compound; and one or more solvents wherein the first and second precursor chemical compounds are mutually soluble, and the relative proportions of the first and second precursor chemical compounds provided are such that Under flame conditions, S r R uO3 can be formed. 1 3 5. If the precursor solution of item No. 134 of the scope of patent application, it also provides a third precursor chemical compound dissolved in the solution, and the third precursor chemical compound can generate a dielectric metal when the flame is applied. Oxide or metalloid oxide, the third precursor chemical compound is provided in an amount such that the deposition resistance material comprises between about 80 and about 9.9 wt% 3]: 1111〇3 and between about 0.1 With about 20 to 1% of the dielectric metal oxide or metalloid oxide. This paper size is applicable to China National Standard (Milk) 8-4 (210 father 297 male |) (Please read the precautions on the back before filling this page), printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Consumption Cooperatives-20 -492018 A8 B8 C8 D8 VI. Patent Application Range 1 3 6 · If you apply for the precursor solution of item 1 34 in the patent application scope, (please read the precautions on the back before filling this page) It also provides the third precursor The chemical compound is dissolved in the solution 'the third precursor chemical compound can produce an enhanced conductive material when flame is applied' The amount of the third precursor chemical compound provided is such that the deposition resistant material contains between about 80 and about 99 · 9 wt% of SrRu03 and the reinforced conductive material between about 0.1 and about 20 wt ·%. 1 3 7 · If the precursor solution of item No. 134 of the scope of patent application, the total concentration of the precursor chemicals is between about 0.25 and about 5 wt%. 1 3 8 · The precursor solution according to item 137 of the scope of patent application, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemicals is between about 0.005 and about 1.0 wt% . 1 3 9 · If the scope of patent application is No. 135 Precursor Solution ’, wherein the total concentration of the precursor chemicals is between about 0.25 and about 5 wt%. 1 4 0 · If the precursor solution of item 139 in the scope of patent application is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, where the precursor solution is diluted with propane so that the total concentration of precursor chemicals is about 0 · 0〇5 和约 1.0 wt%. 1 4 1 · If the precursor solution of item 136 of the scope of the patent application, the total concentration of the precursor chemicals is between about 0.25 and about 5 wt%. 1 4 2 · The precursor solution according to item 41 of the scope of patent application, wherein the precursor solution is diluted with propane so that the total concentration of the precursor chemicals is between about 0. 0 0 5 and about 1.0 wt% . -21-This paper size is applicable to China National Standards (CNS) A4 (210X297 mm) 492018 A8 B8 C8 D8 X. Scope of patent application (Please read the precautions on the back before filling this page) 1 4 3. — A precursor solution that can produce nickel or additive nickel deposition when flame combustion or controlled pressure combustion chemical vapor deposition is applied. The solution contains up to about 40 wt% water, at least about 60 wt% up to about 1000 wt% liquefied ammonia or liquefied N 2 0 as a solvent, and nickel or nickel plus dopants between about 0.01 and about 0.1 W t% of the total amount of chemical precursors. 1 4 4 · The precursor solution according to item 143 of the scope of patent application, which contains at least about 2 wt% of water. 1 4 5 · The precursor solution according to item 143 of the scope of patent application, which contains water between about 2 and about 20 wt%. 1 4 6 · The precursor solution according to item 143 of the scope of patent application, wherein the solvent is liquefied ammonia. 1 4 7 · The precursor solution of item No. 143 of the scope of the patent application, wherein the solvent is liquefied N 2 0. • 1 4 8. For example, the precursor solution of item 143 in the scope of patent application is printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. The chemical precursor of nickel is nickel nitrate. 149. The precursor solution according to item 143 of the patent application scope, which contains phosphoric acid as a chemical precursor of a phosphorus compound dopant. 150. For example, the precursor solution of item No. 143 in the scope of patent application, which contains the nitrate of the element (the element is composed of Sr, Bi, A1, Mg, rare earth elements, and mixtures thereof) As a chemical precursor for the nickel deposition. This paper scale is applicable to Chinese National Standard (CNS) A4 specification (210X297 public director) -22-492018 A8 B8 C8 D8 ^, application for patent scope 151 · —a method for forming a separate resistor, which includes providing an insulating substrate, in A layer of electrical resistive material is provided on the substrate. The resistive material contains a homogeneous mixture of precious metal and dielectric material. A selective portion of the resistive material layer is covered with a photomask, which is chemically inert to aqua regia and makes the resistive material. A selected portion of the layer is exposed to aqua regia, the exposed portion of the resist material layer is etched with aqua regia to leave a patch of the resist material layer on the substrate, and a method for connecting the patch to an electronic circuit is provided. 1 5 2 · The method according to item 151 of the scope of patent application, wherein the precious metal is i white. 1 5 3 · The method according to item 151 of the scope of patent application, wherein the dielectric material is a metal oxide or a metalloid oxide. 1 5 4 · The method according to item 153 of the patent application scope, wherein the dielectric material is oxidized sand. • 1 5 5 • The method according to item 153 of the patent application scope, wherein the dielectric material is an oxide inscription. 1 5 6 · If the method of applying for the scope of patent application No. 151 'in which · the layer of resistance material is formed by combustion chemical vapor deposition ° 1 5 7 · If the method of applying for the scope of patent application No. 151' The layer resistive material patch is embedded in an insulating material. 15 8 · The method according to item 151 of the scope of patent application 'wherein the insulating matrix is an organic polymer. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) -23- (Please read the precautions on the back before filling this page),-° Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives I 492018 A8 B8 C8 D8 6. Application scope of patent 159 · The method according to item 151 of the scope of patent application, wherein the insulating matrix is an organic polymer film with a thickness of about 10 microns or less. (Please read the precautions on the back before filling out this page) 1 6 0 • —A method for forming a resistor, which includes an insulating substrate 'a patch of a resistive material on the insulating material, (the resistive material It includes a homogeneous mixture of precious metal and dielectric material), and a layer of patch of conductive material (which is in electrical contact with the patch of the resistive material at a spaced apart position). This method includes, on an insulating substrate, A layer of resistive material is formed. On the resistive material layer, a layer of conductive material is formed to form a three-layer structure, a selected portion of the conductive material layer is covered with a photomask, and the three-layer structure is etched with aqua regia to remove the conductive material. Exposed part of the material layer and the lower part of the resistive material layer to form a part of the etched structure, the remaining photomask is removed, and the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy printed a photomask to cover the selected part of the part of the etched structure, and Using an etchant that selectively etches the conductive material layer but does not etch the resistive material layer, the conductive pattern of the partially etched structure is etched. Material layer exposed portions. 1 6 1. A method of forming a resistor, the resistor comprising an insulating matrix, a layer of a resistive material patch on the insulating material, wherein the resistive material comprises a homogeneous mixture of a precious metal and a dielectric material, and a layer of The conductive material patch is in electrical contact with the patch of the resistive material at a spaced apart position. This method includes forming a layer of resistive material on an insulating substrate, and this paper is again applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm 1 ~ A8 B8 C8 D8 VI. Patent application scope * On the resistive material layer, a layer of conductive material is formed to form a three-layer structure, and a selected portion of the conductive material layer is covered with a photomask. An etchant that selectively etches the conductive material layer but does not etch the resistive material layer, etches the three-layer structure to form a partially etched structure, covers a selected portion of the partially etched structure with a photomask, and etches the portion with aqua regia The exposed portion of the conductive material layer of the structure is etched to remove the exposed portion of the resistive material layer. ---------- ¢ 1 .------ 、 (Please read the back of the precautions to fill out this page) Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printed in this paper · scale applicable Chinese National Standard (CNS) A4 size (210X297 mm) · 25.