經濟部智慧財產局員工消費合作社印製 475989 A7 ___ B7 五、發明說明（1 ) 〔相關申請案〕 本申請案與1 9 9 6年8月6日提申之日本H1 -2 2 4 4 7 9號專利申請案之標的相關，本申請案依巴黎 公約請求優先權且其在此倂入以供參考。 〔發明背景〕 發明領域 本發明關於探針接觸偵測方法及探針接觸偵測設備， 用來偵測與各晶片端子接觸的探針之接觸，以測量晶片端 子之間的絕緣電阻，或是覆蓋多個晶片元件的一陣列晶片 的一晶片之電阻。 相關技術 在節省重量和尺寸方面，一陣列晶片覆蓋多個晶片元 件，例如同一封裝中的電阻器或電容器。由於陣列晶片在 一窄小空間內覆蓋多個晶片元件，易生問題，例如絕緣缺 陷，因此在生產陣列晶片之後要測量陣列晶片的晶片之間 之絕緣電阻來檢查是否有絕緣缺陷。 一絕緣電阻量測設備用來測量絕緣電阻，其有一探針 接觸待測物，例如陣列晶片，一直流電源和一電流計。絕 緣電阻測量設備在探針接觸待測物端子狀態下供應電壓給 待測物來測量流經探針之漏電流，以偵測絕緣電阻。 若探針與待測物端子未確實接觸，無法精確測量絕緣 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） -----------^--· I I I l· I I I ^ ·111!1111 — I1JIIIJ· (請先閱讀背面之注意事項再填寫本頁) -4- 475989 A7 B7 五、發明說明（2 ) 電阻，因此，在測量絕緣電阻之前，一般先偵測探針之接 觸。 (請先閱讀背面之注意事項再填寫本頁) 以下爲習用一種偵測接觸之方法（1 )和（2 )。 (1 )待測物爲電容器時，由於探針接觸會改變探針 之間的電容，利用電容器電容變化來偵測接觸。 (2 )利用當探針接觸和不接觸時其絕緣電阻有差異 (或電流差異）來偵測接觸。 由於上述方法（1 )測量在各晶片元件二端子之間的 電容，其不可能精確地偵測小電容之晶片元件的接觸。 上述方法（2 )中，當晶片之間的絕緣電阻很大時， 探針有接觸時的絕緣電阻與未接觸時幾乎相同，因而無法 偵測接觸。 由是無法精確地偵測接觸。另一方面，圖1中所示之 方法能精確地.測量電阻。 經濟部智慧財產局員工消費合作社印製 圖1爲測量覆蓋四個晶片電阻器的陣列晶片之端子a 和b之間的絕緣電阻之例子。絕緣電阻測量設備的探針 6 a和6 b接在端子a和b之間，一接觸偵測電路1 1連 接具有端子a之晶片電阻器之另一端子c以及具有端子b 之晶片電阻器的端子d。 絕緣電阻測量設備2有串連之一直流電源4和一電流 計5，接觸偵測電路1 1有串連的一電阻器1 2和一切換 開關1 3。 首先打開切換開關1 3，因此由絕緣電阻測量設備2 和接觸偵測電路1 1形成一封閉迴路。若探針6 a和6 b 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ~ 475989 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（3 ) 與端子a和b確實接觸，與直流電源4和電阻器1 2 —致 的電流通過電流計5。另一方面，若探針6 a和6 b分別 未與端子a和b確實接觸，在接觸區產生接觸電阻，電流 計5測得的電流變小。 因此圖1中的電路能依據電流計5測得的電流値來偵 測接觸。 在圖1電路中，當判定探針6 a，6 b接觸良好，切 換開關1 3關閉。因此接觸偵測電路1 1被切斷，依據絕 緣電阻測量設備2的電流計5測得的電流計來測量端子a 和b之間的絕緣電阻。 圖1中的電路比上述方法（1 )或（2 )更能偵測探 針6 a和6 b之接觸，但是在偵測接觸和測量絕緣電阻時 得切換開關1 3，控制不便。 另一方面，在測量晶片電阻器的電阻時，即使探針與 各晶片端子接觸不完全，其無法精確地測量晶片電阻器之 電阻。 〔發明槪述〕 本發明之目的在於提供探針接觸偵測方法及探針接觸 偵測設備，其能利用簡化結構和程序來偵測探針之接觸。 爲達成上述目的，偵測流經與覆蓋多個晶片元件的一 陣列晶片中彼此不同的各晶片元件的晶片端子接觸的第一 及第二探針之電流，以及於偵測晶片端子之間絕緣電阻時 在第一及第二探針連接下依據所測電流而偵測第一，第二 ---I I ----ί I · I I I l·--I ^ « — — — — — — I— (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6 - 475989 A7 B7 五、發明說明（4 ) 探針與晶片端子（絕緣電阻待測物）之間是否接觸良好β 探針接觸偵測方法包括下列步驟： (請先閱讀背面之注意事項再填寫本頁) 使第一及第二探針分別與絕緣電阻待測物的第一及第 二晶片端子接觸，並以連接在與第一及第二晶片端子相關 的第三及第四晶片端子之間的一電容器來測量第一及第二 探針之間的電路；以及 依據所測電容大小來偵測對應第一及第二探針的第一 及第二晶片端子之間是否接觸良好。 此外偵測流經與覆蓋多個晶片元件的一陣列晶片中彼 此不同的各晶片元件的晶片端子接觸的第一及第二探針之 電流，以及於偵測晶片端子之間絕緣電阻時在第一及第二 探針連接下依據所測電流而偵測第一，第二探針與晶片端 子（絕緣電阻待測物）之間是否接觸良好之探針接觸偵測 設.備包括·· 經濟部智慧財產局員工消費合作社印製 電容測量裝置，其結構使第一及第二探針分別與絕緣 電阻待測物的第一及第二晶片端子接觸，並在一電容器連 接在與第一及第二晶片端子相關的第三及第四晶片端子之 間的狀態之下來測量第一及第二探針之間的電容，以及 接觸偵測裝置，其結構能依據所測電容大小來偵測對 應第一及第二探針的第一及第二晶片端子之間是否接觸良 好。 依據本發明，在一電容器接在與第一及第二晶片端子 (絕緣電阻待測物）相關的第一及第二端子之間的狀態下 來測量第一與第二探針之間的電容，因而偵測探針之接觸 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475989 Α7 _ Β7 五、發明說明（5 ) 。由此，其可利用測量結果來精確地偵測探針之接觸，不 需參考晶片元件等之電容。 (請先閱讀背面之注意事項再填寫本頁) 此&在偵測探針接觸之後，在測量絕緣電阻之時不 需移去，由此，其可省略切換開關等等，亦可減少 .元件數目> 類似地4即使在測量晶片電阻器電阻時，電容器接在 晶片電阻器兩端，以測量第一及第二探針之間的電容，並 依據測量結果偵測接觸，因此可精確地偵測探針之接觸。 〔圖式之簡單說明〕 圖1爲傳統探針接觸偵測設備一例槪示圖。 圖2爲本發明探針接觸偵測設備一實施例電路圖。 圖3爲一陣列晶片一例槪不圖。 圖4爲將探針和電容器接到同一晶片端子一例槪示圖 〇 經濟部智慧財產局員工消費合作社印製 圖5爲本發明探針接觸偵測設備第二實施例電路圖。 元件對照表 1 陣 列 晶 片 2 絕 緣 電 阻測量設備 3 電 容 器 4 直 流 電 源 5 電 流 計 6 a 探 針 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8- 475989 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（6 ) 6 b 探針 7 a 探針 7 b 探針 11 接觸偵測電路 12 電阻器 13 切換開關 2 1 晶片電阻器 2 2 電阻測量設備 2 2a 探針 2 2b 探針 a 晶片端子 b 晶片端子 c 晶片端子 d 晶片端子。 〔較佳實施例說明〕 以下參閱圖式介紹本發明探針接觸偵測方法及探針接 觸偵測設備。 (第一實施例） 圖2爲本發明探針接觸偵測設備第一實施例電路圖， 圖2的探針接觸偵測設備是用來測量覆蓋多個晶片元件（ 例如晶片電阻器、晶片電容器及，亞鐵鹽晶片）之晶片端 子之間的絕緣電阻。 — — — — — J-III1I · I I I l· I I I ^ 11 - — — — — — I !. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -9- 475989 A7 B7 五、發明說明（7 ) (請先閱讀背面之注意事項再填寫本頁) 圖3爲陣列晶片1 一例槪示圖，陣列晶片1覆蓋四個 亞鐵鹽晶片。接著說明測量晶片端子a和b之間的絕緣電 阻例子。 圖2的探針接觸偵測裝置有一絕緣電阻測量設備2和 一電容器3。絕緣電阻測量設備2有一直流電源4和一電 流計5 (電流偵測裝置），測量探針6 a和6 b分別連接 直流電源4和電流計5。絕緣電阻測量設備2在探針6 a 和6 b接觸陣列晶片1 (待測物）的晶片端子之狀態下偵 測流經電流計5之電流，並依據所測電流測量絕緣電阻。 圖2中的絕緣電阻測量設備亦可測量探針6 a ，6 b之間 的電容。 絕緣電阻測量設備的探針6 a，6 b接觸陣列晶片1 之晶片端子a和b，接到電容器3 —端的探針7 a與具有 晶片端子I 元件另一端子c接觸。 有需要將3的電容設定到最低値（例如在2 p F左右），使絕#霍阻測量設備2可偵測探針6 a和6 b 之接觸，此外可以絕緣性能高的易得材料形成電容器3。 經濟部智慧財產局員工消費合作社印製 接著說明圖2中探針接觸偵測設備之操作，在測量陣 列晶片1的晶片端子a和b之間的絕緣電阻時，首先進行 偵測絕緣電阻測量設備2的探針6 a和6 b是否確實接觸 〇 特別言之，絕緣電阻測量設備2的探針6 a，6 b接 觸晶片端子a，b，接到電容器3 —端的探針7 a接觸具 有晶片端子a的晶片元件另一晶片端子c，而接到電容器 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 475989 A7 B7 五、發明說明（8 ) 3另一端的探針7 b接觸具有晶片端子b的晶片元件另一 晶片端子d。 (請先閱讀背面之注意事項再填寫本頁) 因此在絕緣電阻測量設備2和電容器3之間形成一封 閉迴路，電流由絕緣電阻測量設備2的直流電源4流經電 容器3而將電荷充入電容器。 在此狀態下，絕緣電阻測量設備2測量探針6 a，6 b之間的電容，依據電容大小，絕緣電阻測量設備2測量 探針6a，6b之接觸。特別言之，當探針6a ，6b與 晶片端子a，b不完全接觸，絕緣電阻測量設備2測得的 電容變小。如此，若所測電容大於一預定値，絕緣電阻測 量設備2判定接觸良好，若所測電容小於預定値則爲不佳 (失敗）。 在判定接觸良好之後，於與圖2相同的連接狀態下， 依據電流計5.偵測的電流來計算絕緣電阻，絕緣電阻等於 直流電源4電壓除以電流計5測得電流値。 經濟部智慧財產局員工消費合作社印製 由是，本實施例允許絕緣電阻測量設備2的探針6 a ，6 b與晶片端子（待測物）接觸’並在電容器3連接在 對應待測物晶片端子的其他晶片側的晶片端子之間的狀態 下測量待測物晶片端子之間的電容。由此可依據電容大小 精確地判定探針6 a，6 b之接觸。 此外，判定探針6 a ’ 6 b接觸良好之後’可在不移 去電容器3下來測量晶片端子之間的絕緣電阻’因此不需 圖1中的切換開關，所以能節省元件成本並簡化測量程序 -11 - 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） 475989 A7 B7 五、發明說明（9) 圖2中所示爲將電容器3接到晶片端子（待測物）另 一側的晶片端子一例，本發明可用於不同型式的陣列晶片 1 ，陣列晶片形狀不限於圖3中所示者。 經濟部智慧財產局員工消費合作社印製 (第二實施例） 第二實施例在測量電阻時偵測探 實接觸，其測量狀態係允許探針接觸 圖5爲本發明探針接觸偵測設備 圖5的探針接觸偵測設備有與待測物 連接之探針7 a，7 b，接在探針7 容器3，以及一電阻測量設備2 2。 電阻測量設備2 2的探針2 2 a 片電阻器2 1兩端，電阻測量設備2 直流電壓源4與一電流計5，電阻測 針2 2 a ，2 2 b之間的電容。 赛廣說明餐衡接觸偵測設備之操 7 b a，分別接到待測 二晶片端此下偵測電阻測 2 2 a，2 2 b與對應的晶片端子是 特別言之，電阻測量設備2 2測 b之間的電容，並依據電容大小來偵 b之接觸。在判定探針2 2 a，2 2 觸後，電阻測量設備測量晶片電阻器 由是，第二實施例依據探針2 2 針是否與晶片材料確 晶片電阻器兩端。 第二實施例電路圖， 晶片電阻器2 1兩端 a ，7 b之間的一電 ，2 2 b分別接到晶 2內部設有串連的一 量設備2 2可測量探 作，首先探針7 a， 物晶片電阻器2 1的 量設備2 2的探針 否確實接觸。 量探針22a，22 測探針2 2 a，2 2 b與晶片端子確實接 2 1的電阻。 a ，2 2 b之間的電 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- 475989 A7 B7 五、發明說明（10) 容來判定測量晶片電阻器2 1電阻値的探針2 2 a，2 2 b是否與晶片端子確實接觸。由此可輕易地且精確地偵測 探針2 2 a，2 2 b的接觸。雖然第二實施例特別適用於 測量晶片電阻器的電阻値，其亦可測量低電阻値之晶片電 阻器。 在上述第一和第二實施例中，雖然接到電容器3的探 針7 a，7 b是接到晶片端子，電容器3亦可不用探針而 用夾具等而連接晶片端子。 (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） _ 13 -Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 475989 A7 ___ B7 V. Description of Invention (1) [Related Application] This application is related to Japan H1 -2 2 4 4 7 filed on August 6, 1986 The subject matter of the patent application No. 9 is related. This application claims priority under the Paris Convention and is hereby incorporated by reference. [Background of the Invention] Field of the Invention The present invention relates to a probe contact detection method and a probe contact detection device, which are used to detect the contact of a probe in contact with each chip terminal to measure the insulation resistance between the chip terminals, or Resistance of a wafer of an array wafer covering a plurality of wafer elements. Related Art In terms of saving weight and size, an array chip covers multiple chip components, such as resistors or capacitors in the same package. Since the array wafer covers multiple wafer elements in a narrow space, it is easy to cause problems, such as insulation defects. Therefore, after the array wafer is produced, the insulation resistance between the wafers of the array wafer is measured to check whether there are insulation defects. An insulation resistance measuring device is used to measure the insulation resistance. It has a probe in contact with the object to be measured, such as an array chip, a DC power supply, and an ammeter. The insulation resistance measuring device supplies a voltage to the DUT when the probe contacts the DUT terminal to measure the leakage current flowing through the probe to detect the insulation resistance. If the probe is not in contact with the terminal of the object to be measured, the insulation cannot be accurately measured. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) ----------- ^-· III l · III ^ · 111! 1111 — I1JIIIJ · (Please read the precautions on the back before filling out this page) 475 989989 A7 B7 V. Description of the invention (2) Resistance, so before measuring the insulation resistance, generally Detect contact with the probe. (Please read the precautions on the back before filling out this page.) The following is a practice method (1) and (2). (1) When the object to be measured is a capacitor, the contact between the probes will change the capacitance between the probes. Use the capacitance change of the capacitor to detect the contact. (2) Use the difference in insulation resistance (or current difference) when the probe is in contact and not in contact to detect contact. Since the above method (1) measures the capacitance between the two terminals of each chip element, it is impossible to accurately detect the contact of the chip element with a small capacitance. In the above method (2), when the insulation resistance between the wafers is large, the insulation resistance when the probe is in contact is almost the same as when it is not in contact, so the contact cannot be detected. It is not possible to accurately detect contact. On the other hand, the method shown in Figure 1 can accurately measure resistance. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 1 is an example of measuring the insulation resistance between terminals a and b of an array chip covering four chip resistors. The probes 6 a and 6 b of the insulation resistance measuring device are connected between the terminals a and b, and a contact detection circuit 11 is connected between the other terminal c of the chip resistor having the terminal a and the chip resistor of the chip resistor having the terminal b. Terminal d. The insulation resistance measuring device 2 has a DC power supply 4 and an ammeter 5 connected in series, and the contact detection circuit 11 has a resistor 12 and a change-over switch 13 connected in series. First, the switch 13 is turned on, so a closed loop is formed by the insulation resistance measuring device 2 and the contact detection circuit 11. If the probes 6 a and 6 b are in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) on this paper size ~ 475989 A7 B7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) and terminals a and b are indeed in contact, and the current in correspondence with the DC power source 4 and the resistor 12 is passed through the ammeter 5. On the other hand, if the probes 6 a and 6 b are not in actual contact with the terminals a and b, respectively, a contact resistance is generated in the contact area, and the current measured by the ammeter 5 becomes small. Therefore, the circuit in FIG. 1 can detect contact based on the current 値 measured by the ammeter 5. In the circuit of FIG. 1, when it is determined that the probes 6a and 6b are in good contact, the switch 13 is turned off. Therefore, the contact detection circuit 11 is cut off, and the insulation resistance between the terminals a and b is measured based on the ammeter measured by the ammeter 5 of the insulation resistance measuring device 2. The circuit in Fig. 1 can detect the contact between the probes 6 a and 6 b more than the above method (1) or (2). However, when detecting the contact and measuring the insulation resistance, the switch 13 must be switched, which is inconvenient to control. On the other hand, when measuring the resistance of a wafer resistor, it is not possible to accurately measure the resistance of a wafer resistor even if the probe is incomplete contact with each wafer terminal. [Explanation of the Invention] The object of the present invention is to provide a probe contact detection method and a probe contact detection device, which can use a simplified structure and procedure to detect the probe contact. In order to achieve the above purpose, currents flowing through the first and second probes in contact with wafer terminals of different wafer elements in an array wafer covering a plurality of wafer elements, which are different from each other, are detected, and insulation is detected between the wafer terminals. When the resistance is connected, the first and second probes are detected according to the measured current, and the first and second --- II ---- ί I · III l · --I ^ «— — — — — — I — (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -6-475989 A7 B7 V. Description of the invention (4) Probes and wafers Whether the terminals (insulation resistance to be tested) are in good contact. The probe detection method includes the following steps: (Please read the precautions on the back before filling this page) Make the first and second probes separately from the insulation resistance. The first and second wafer terminals of the test object are in contact, and a capacitor connected between the third and fourth wafer terminals associated with the first and second wafer terminals is used to measure the voltage between the first and second probes. Circuit; and detecting correspondence based on measured capacitance And a second probe if the contact between the wafer and the second terminal of the first well. In addition, the current flowing through the first and second probes in contact with the wafer terminals of the wafer elements different from each other in an array wafer covering a plurality of wafer elements is detected, and when the insulation resistance between the wafer terminals is detected, A probe contact detection device that detects whether the first and second probes are in good contact with the chip terminals (insulation resistance test object) according to the measured current when the first and second probes are connected. Equipment includes ... Economic The Ministry of Intellectual Property Bureau employee consumer cooperative printed a capacitance measuring device with a structure in which the first and second probes are in contact with the first and second chip terminals of the insulation resistance test object, respectively, and a capacitor is connected between the first and second probe terminals. The capacitance between the first and second probes and the contact detection device are measured in a state between the third and fourth chip terminals related to the second chip terminal, and the structure can detect the correspondence according to the measured capacitance. Whether the first and second wafer terminals of the first and second probes are in good contact with each other. According to the present invention, the capacitance between the first and second probes is measured with a capacitor connected between the first and second terminals related to the first and second chip terminals (insulation resistance test object), Therefore, the contact of the detection probe with this paper is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 475989 Α7 _ B7 5. Description of the invention (5). Therefore, it can use the measurement results to accurately detect the contact of the probe without having to refer to the capacitance of the chip component and the like. (Please read the precautions on the back before filling in this page) This & does not need to be removed when measuring the insulation resistance after detecting the probe contact. Therefore, it can omit the switch, etc., and reduce it. Number of components similarly 4 Even when measuring the resistance of the chip resistor, the capacitor is connected across the chip resistor to measure the capacitance between the first and second probes, and the contact is detected based on the measurement result, so it can be accurate Ground detection probe contact. [Brief Description of the Drawing] FIG. 1 is a diagram showing an example of a conventional probe contact detection device. FIG. 2 is a circuit diagram of an embodiment of a probe contact detection device according to the present invention. FIG. 3 is an example of an array chip. Fig. 4 is a diagram showing an example of connecting a probe and a capacitor to the same chip terminal. 〇 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. Fig. 5 is a circuit diagram of the second embodiment of the probe contact detection device of the present invention. Component comparison table 1 Array chip 2 Insulation resistance measurement equipment 3 Capacitor 4 DC power supply 5 Ammeter 6 a Probe This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -8- 475989 Intellectual Property of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau A7 B7 V. Description of the invention (6) 6 b Probe 7 a Probe 7 b Probe 11 Contact detection circuit 12 Resistor 13 Switch 2 1 Chip resistor 2 2 Resistance measuring device 2 2a Probe 2 2b Probe a Wafer terminal b Wafer terminal c Wafer terminal d Wafer terminal. [Explanation of the preferred embodiment] The probe contact detection method and probe contact detection device of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 2 is a circuit diagram of a first embodiment of a probe contact detection device according to the present invention. The probe contact detection device of FIG. 2 is used to measure and cover multiple chip components (such as chip resistors, chip capacitors, and , Ferrous salt wafer). — — — — — J-III1I · III l · III ^ 11-— — — — — I!. (Please read the notes on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) -9- 475989 A7 B7 V. Description of the invention (7) (Please read the precautions on the back before filling out this page) Figure 3 shows an example of an array chip 1. The array chip 1 covers four sub-chips. Iron salt wafer. Next, an example of measuring the insulation resistance between the wafer terminals a and b will be described. The probe contact detection device of FIG. 2 has an insulation resistance measuring device 2 and a capacitor 3. The insulation resistance measuring device 2 has a DC power source 4 and a current meter 5 (current detection device), and the measuring probes 6 a and 6 b are connected to the DC power source 4 and the ammeter 5, respectively. The insulation resistance measuring device 2 detects a current flowing through the ammeter 5 while the probes 6 a and 6 b are in contact with the wafer terminals of the array wafer 1 (the object to be measured), and measures the insulation resistance based on the measured current. The insulation resistance measuring device in Fig. 2 can also measure the capacitance between the probes 6 a and 6 b. The probes 6 a and 6 b of the insulation resistance measuring device contact the wafer terminals a and b of the array wafer 1, and the probe 7 a connected to the capacitor 3 end is in contact with the other terminal c of the component having the wafer terminal I. It is necessary to set the capacitance of 3 to the lowest value (for example, around 2 p F), so that the insulation resistance measurement device 2 can detect the contact between the probes 6 a and 6 b, and can be formed from readily available materials with high insulation properties. Capacitor 3. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Next, the operation of the probe contact detection device in FIG. 2 will be explained. When measuring the insulation resistance between the chip terminals a and b of the array chip 1, the insulation resistance measurement device is first detected. Whether the probes 6 a and 6 b of 2 are indeed in contact. In particular, the probes 6 a and 6 b of the insulation resistance measuring device 2 are in contact with the wafer terminals a and b, and the probes 7 a connected to the capacitor 3 are in contact with the wafer. The chip component of terminal a is connected to the capacitor of another chip terminal -10- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 475989 A7 B7 V. Description of the invention (8) 3 The other end The probe 7 b contacts another wafer terminal d of a wafer element having a wafer terminal b. (Please read the precautions on the back before filling in this page) Therefore, a closed loop is formed between the insulation resistance measuring device 2 and the capacitor 3, and the electric current is charged by the DC power source 4 of the insulation resistance measuring device 2 through the capacitor 3 Capacitor. In this state, the insulation resistance measuring device 2 measures the capacitance between the probes 6a, 6b, and according to the capacitance, the insulation resistance measuring device 2 measures the contact of the probes 6a, 6b. In particular, when the probes 6a, 6b are not in full contact with the wafer terminals a, b, the capacitance measured by the insulation resistance measuring device 2 becomes small. In this way, if the measured capacitance is greater than a predetermined value, the insulation resistance measuring device 2 determines that the contact is good, and if the measured capacitance is less than the predetermined value, it is not good (failure). After determining that the contact is good, calculate the insulation resistance based on the current detected by the ammeter 5. under the same connection state as in Figure 2. The insulation resistance is equal to the voltage of the DC power supply 4 divided by the current measured by the ammeter 5. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In this embodiment, the probes 6 a and 6 b of the insulation resistance measuring device 2 are allowed to come into contact with the chip terminals (object to be tested) and connected to the corresponding object to be tested in capacitor 3. The capacitance between the wafer terminals of the test object is measured in a state between the wafer terminals on the other wafer sides of the wafer terminals. Therefore, the contact between the probes 6 a and 6 b can be accurately determined according to the capacitance. In addition, it is determined that after the probes 6 a and 6 b are in good contact, 'the insulation resistance between the wafer terminals can be measured without removing the capacitor 3'. Therefore, the changeover switch in FIG. 1 is not needed, which can save component costs and simplify the measurement procedure. -11-This paper size is in accordance with China National Standard (CNS) A4 specification (21 × 297 mm) 475989 A7 B7 V. Description of the invention (9) Figure 2 shows the capacitor 3 connected to the chip terminal (the object to be tested) ) As an example of the wafer terminal on the other side, the present invention can be applied to an array wafer 1 of a different type, and the shape of the array wafer is not limited to that shown in FIG. 3. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (Second Embodiment) The second embodiment detects the probe contact when measuring the resistance, and the measurement state is that the probe is allowed to contact. The probe contact detection device of 5 includes probes 7 a and 7 b connected to the object to be measured, a container 3 connected to the probe 7, and a resistance measuring device 2 2. The resistance between the probe 2 2 a of the resistance measuring device 2 2 and the chip 2 at both ends. The resistance between the DC voltage source 4 and an ammeter 5 of the resistance measuring device 2 and the resistance between the resistance probes 2 2 a and 2 2 b. Saiguang explained that the operation of the food balance contact detection device is 7 ba, which is respectively connected to the second chip end to be tested. The resistance measurement 2 2 a, 2 2 b and the corresponding chip terminal are special words. The resistance measurement device 2 2 Measure the capacitance between b and detect b's contact based on the capacitance. After it is determined that the probes 2 2 a and 2 2 are in touch, the resistance measuring device measures the chip resistor. Therefore, the second embodiment is based on whether the probe 2 2 pin is correct with the wafer material at both ends of the chip resistor. The circuit diagram of the second embodiment, a resistor between the two ends a and 7 b of the chip resistor 21, 2 2 b are respectively connected to a quantity device 2 2 which is connected in series in the crystal 2 to measure the probe operation, first a probe 7 a. Check whether the probe of the measuring device 2 2 of the physical chip resistor 21 is actually in contact. The measuring probes 22a, 22 measure the resistance of the probes 2 2 a, 2 2 b and the chip terminals. Electricity between a and 2 2 b (please read the notes on the back before filling in this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -12- 475989 A7 B7 V. Invention Note (10) to determine whether the probes 2 2 a and 2 2 b that measure the resistance of the chip resistor 21 1 are in contact with the chip terminals. This makes it easy and accurate to detect the contact of the probes 2 2 a, 2 2 b. Although the second embodiment is particularly suitable for measuring the resistance of a chip resistor, it can also measure a low-resistance chip resistor. In the first and second embodiments described above, although the probes 7a, 7b connected to the capacitor 3 are connected to the wafer terminal, the capacitor 3 may be connected to the wafer terminal using a jig or the like without a probe. (Please read the precautions on the back before filling out this page} Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy