TW471036B - Method of forming gate electrode of semiconductor device - Google Patents

Method of forming gate electrode of semiconductor device Download PDF

Info

Publication number: TW471036B
Authority: TW; Taiwan
Prior art keywords: gate electrode; forming; silicide film; film; titanium silicide
Prior art date: 1998-12-28

Application number

TW088121365A

Other languages

English (en)

Chinese (zh)

Inventor

Se-Aug Jang

Tae-Kyun Kim

In-Seok Yeo

You-Seok Suh

Dae-Gyu Park

Original Assignee

Hyundai Electronics Ind

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-12-28

Filing date

1999-12-07

Publication date

2002-01-01

1999-12-07 Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind

2002-01-01 Application granted granted Critical

2002-01-01 Publication of TW471036B publication Critical patent/TW471036B/zh

Links

238000000034 method Methods 0.000 title claims abstract description 31
239000004065 semiconductor Substances 0.000 title claims abstract description 12
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 17
229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 16
229910021332 silicide Inorganic materials 0.000 claims abstract description 15
238000000151 deposition Methods 0.000 claims abstract description 12
239000000758 substrate Substances 0.000 claims abstract description 6
229910021341 titanium silicide Inorganic materials 0.000 claims abstract 16
238000000059 patterning Methods 0.000 claims abstract 2
239000010408 film Substances 0.000 claims description 65
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
229910052719 titanium Inorganic materials 0.000 claims description 8
239000010936 titanium Substances 0.000 claims description 8
238000002425 crystallisation Methods 0.000 claims description 7
230000008025 crystallization Effects 0.000 claims description 7
238000004151 rapid thermal annealing Methods 0.000 claims description 7
239000010409 thin film Substances 0.000 claims description 7
238000000280 densification Methods 0.000 claims description 5
239000004575 stone Substances 0.000 claims description 4
150000001875 compounds Chemical class 0.000 claims description 3
230000008021 deposition Effects 0.000 claims description 3
238000000137 annealing Methods 0.000 claims 3
238000010438 heat treatment Methods 0.000 claims 3
238000005240 physical vapour deposition Methods 0.000 claims 3
230000000977 initiatory effect Effects 0.000 claims 1
230000015572 biosynthetic process Effects 0.000 abstract description 5
229920005591 polysilicon Polymers 0.000 abstract 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
229910052710 silicon Inorganic materials 0.000 description 11
239000010703 silicon Substances 0.000 description 11
229910021419 crystalline silicon Inorganic materials 0.000 description 7
UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 3
229910021417 amorphous silicon Inorganic materials 0.000 description 3
239000011800 void material Substances 0.000 description 3
241000287828 Gallus gallus Species 0.000 description 1
PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
241001282135 Poromitra oscitans Species 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
229910008484 TiSi Inorganic materials 0.000 description 1
229910008479 TiSi2 Inorganic materials 0.000 description 1
229910008486 TiSix Inorganic materials 0.000 description 1
206010048232 Yawning Diseases 0.000 description 1
150000001412 amines Chemical class 0.000 description 1
230000003667 anti-reflective effect Effects 0.000 description 1
DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000012535 impurity Substances 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000000344 soap Substances 0.000 description 1
229910052723 transition metal Inorganic materials 0.000 description 1
150000003624 transition metals Chemical class 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Manufacturing & Machinery (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Ceramic Engineering (AREA)
Electrodes Of Semiconductors (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)

TW088121365A 1998-12-28 1999-12-07 Method of forming gate electrode of semiconductor device TW471036B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR10-1998-0059138A KR100447992B1 (ko)	1998-12-28	1998-12-28	반도체소자의게이트전극형성방법

Publications (1)

Publication Number	Publication Date
TW471036B true TW471036B (en)	2002-01-01

Family

ID=19566099

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW088121365A TW471036B (en)	1998-12-28	1999-12-07	Method of forming gate electrode of semiconductor device

Country Status (3)

Country	Link
JP (1)	JP2000196085A (ko)
KR (1)	KR100447992B1 (ko)
TW (1)	TW471036B (ko)

1998
- 1998-12-28 KR KR10-1998-0059138A patent/KR100447992B1/ko not_active IP Right Cessation
1999
- 1999-12-07 TW TW088121365A patent/TW471036B/zh not_active IP Right Cessation
- 1999-12-13 JP JP11352704A patent/JP2000196085A/ja active Pending

Also Published As

Publication number	Publication date
KR20000042846A (ko)	2000-07-15
KR100447992B1 (ko)	2004-11-16
JP2000196085A (ja)	2000-07-14

Legal Events

Date	Code	Title	Description
2002-04-23	GD4A	Issue of patent certificate for granted invention patent
2010-10-11	MM4A	Annulment or lapse of patent due to non-payment of fees

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