TW454259B - Polishing method of semiconductor substrate and device therefor - Google Patents

Abstract

The purpose of the present invention is to discharge rinse liquid on a polishing cloth from above the polishing cloth, and keep an abrasive solution, supplied on the polishing cloth, on the polishing cloth. A polishing cloth 12 is attached on a flat polishing cloth hold section 11a of a surface plate 11. A substrate hold head 14 which holds a substrate 13 and rotates is provided above the surface plate 11, and the substrate 13 is held in pressure contact with the polishing cloth 12 on the surface plate 11 while it rotates. An abrasive 15 is supplied on the polishing cloth 12 by a fixed amount of the abrasive from an abrasive supply pipe 16. An abrasive pressing member 18 like a belt plate which presses the abrasive 15 on a central part of the surface plate 11 is provided on the polishing cloth 12 and comes into slide contact with the polishing cloth 12. The abrasive pressing member 18 is fixed at inner part 18a in the radial direction, and is positioned forward in the direction of rotation at the time of polishing relative to the radius of the surface plate 11. And its outer part 18b in the radial direction is positioned backward in the direction of rotation at the time of polishing relative to the radius of the surface plate 11.

Description

5 4 48 5 9 η Α7 ^ ___Β7___ 五、發明説明（1 ) 〔發明所屬之技術領域〕 本發明係關於一種實行藉由研磨劑用於平坦化處理例 如矽所成之半導體基板表面所用之化學機械研磨（CM P )的半導體基板之研磨裝置及其方法。 〔以往之技術〕 1 9 9 0年以後，在對於矽等所成半導體基板之化學 機械研磨，因半導體基板之直徑大型化至1 0 cm以上， 而研磨成爲一枚一枚地處理之趨勢，因此基板每一枚之研 磨劑之量會增加》 以下，一面參照圖式一面說明以往之半導體基板的研 磨裝置之一例子。 第22圖係表示以往之研磨裝置的概略構成*在第 2 2圖，1 1係具有平坦之表面之剛體所成的基板保持部 1 1 a，及從該基板保持部11 a之下面向垂直下方延伸 的旋轉軸1 1 b，及旋轉該旋轉軸11 b之未予圖示的旋 轉手段的定盤，在該定盤1 1之基板保持部1 1 a之表面 密貼有研磨布1 2。在定盤11之上方設有保持半導體基 板1 3並施以旋轉之基板保持頭1 4，藉該基板保持頭 14，半導體基板1 3係一面旋轉一面壓接向定盤1 1上 之研磨布1 2。又，1 5係含有砥粒（用於研磨所用之微 小粉）的液狀研磨劑，該研磨劑1 5係從研磨劑供應管 1 6每次所定量地供應至研磨布1 2上，而在研磨布1 2 與半導體基板1 3之間供應砥粒· 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公釐) " " "" _ 4 -5 4 48 5 9 η Α7 ^ ___ Β7 ___ V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a chemical machine for performing a planarization process on a semiconductor substrate surface made of silicon, for example, by using an abrasive. Device and method for polishing (CM P) semiconductor substrate. [Previous technology] After 1900, in the chemical mechanical polishing of semiconductor substrates made of silicon and the like, the diameter of semiconductor substrates has increased to more than 10 cm, and polishing has become a trend of processing one by one. Therefore, the amount of the abrasive per substrate will increase. Hereinafter, an example of a conventional polishing device for a semiconductor substrate will be described with reference to the drawings. Fig. 22 shows a schematic configuration of a conventional polishing apparatus. In Fig. 22, 11 is a substrate holding portion 1 1 a formed of a rigid body having a flat surface, and faces vertically from below the substrate holding portion 11 a. A rotating shaft 1 1 b extending downward and a fixed plate for rotating means (not shown) that rotates the rotating shaft 11 b. Abrasive cloth 1 2 is adhered to the surface of the substrate holding portion 1 1 a of the fixed plate 1 1. . Above the fixed plate 11 is provided a substrate holding head 14 for holding and rotating the semiconductor substrate 13. With the substrate holding head 14, the semiconductor substrate 1 3 is a polishing cloth which is rotated while being pressed against the fixed plate 11 1 2. In addition, 15 is a liquid abrasive containing particles (fine powder used for grinding), and the abrasive 15 is supplied from the abrasive supply pipe 16 to the abrasive cloth 12 in a fixed amount each time, and Supply grains between abrasive cloth 1 2 and semiconductor substrate 1 3 · This paper size adopts China National Standard (CNS) A4 specification (210X297 mm) " " " " _ 4-

I-------------丨裝丨-------訂—^------線 (請先閲讀背面之注意事項ff·本頁) ..(V 經濟部中央標準局負工消費合作社印製 4 5 4系 5 9 A7 B7 .1/ 五、發明説明（2 ) 在以上所構成之研磨裝置，係一面旋轉定盤1 1並旋 轉研磨劑1 5所供應之研磨布1 2，一面藉由依基板保持 頭1 4將半導體基板1.3推向研磨布1 2，俾研磨半導體 基板1 3之表面。 此時，在半導體基板1 3之表面有凹凸部時，則在半 導體基板1 3之凸部，因與研磨布1 2之接壓變大而使研 磨速度變快，一方面，在半導體基板1 3之凹部，因與研 磨布1 2之接觸壓力變小而使研磨速度變慢。因此，半導 體基板1 3表面之凹凸部被緩和而使半導體基板1 3之表 面成爲平坦者。該研磨技術係例如介紹在「1 9 9 4年1 .月號，月刊 Semiconductor World」_5_8 〜5 9 頁，:_或「/ 、So 1. id State Technology」_Guly，1992/ 日.本語版 3 2 〜3 7頁等。 〔發明欲解決之課題〕 然而，在上述之研磨裝置，係具有如下所述之問題。 經濟部中央標準局貝工消費合作社印製. 對於研磨劑之供應量與研磨率之間加以說明；研磨率 係隨著硏磨劑15之供應量的增加而增大，而在某一供應 量處成爲一定。因此，一般將比研磨率成爲一定之供應量 稍多量之研磨劑15供應於研磨布12之上面。 然而，如上所述，因一面旋轉研磨布1 2 —面供應研 磨劑1 5，因此，研磨劑1 5係因隨著定盤1 1之旋轉的 離心力，流向研磨布1 2之外側。當研磨劑1 5之量比所 定量少時*則降低研磨率*爲了補足研磨率之降低，增大 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐）~~~~ ~~ 4 5 4^59 A7 B7 .經濟部中央標準局員工消費合作社印製 五、發明説明（3 ) 將半導體基板1 3推向研磨布1 2之壓力即可以，惟發生 研磨特性劣化等問題》因此，必須經常供應比研磨率成爲 一定之供應量稍多量的研磨劑，成爲研磨劑佔有實行研磨 所用費用之大部分。 如此，如表示於美國專利第4 9 1 0 1 5 5號，提案 一種藉隔間板圍繞研磨布之周圍來防止研磨劑之流出，成 爲不會從研磨布上流出研磨劑的研磨裝置及研磨方法。 然而，依該研磨裝置及研磨方法，則藉研磨所發生之 研磨布之滓等不要物會儲存在研磨布上。又，在研磨布上 實行研磨後之半導體基板之水洗，或實行修整（研磨布表 面之調節）時，若在研磨布上供應水，則該水也與研磨劑 同樣地不會從研磨布上流出。由於這些，研磨劑之濃度變 化，而發生研磨特性變化之新問題。 鑑於如上所述，本發明之目的係在於供應之研磨布上 之洗淨液係從研磨布上被排出，惟供應於研磨布上之研磨 劑係保持在研磨布上。 ..... . 〔解決課題所用之手段〕 爲了達成上述目的，申請專利範圍第1項之發明所採 用之解決手段係將半導體基板之研磨裝置，其特徵爲：具 備 具有平坦面且將與該平坦面垂直之軸爲中心旋轉的定 盤，及載置於該定盤之上述平坦面上的研磨布，及將研磨 劑供應於上述研磨布之上面的研磨劑供應手段，及保持半 ------—!—丨裝-------訂------線 ··. (請先閲讀背面之注意事^_填寫本頁) 本紙張尺度適用中國國家橾準（CNS > A4規格（210X297公釐） 1/ 1/ 5 4 4^5 9 at Β7 五、發明説明（4 ) 導體基板並對於研磨布施以推壓的基板保持手段，及將供 應於上述研磨布上藉隨著上述定盤之旋轉之離心力而流動 於上述定盤之外側的研磨劑推壓向上述定盤之中心側的研 磨劑推壓手段所構成者。 由於申請專利範圍第1項之構成，藉由研磨劑推壓手 段，隨著定盤之旋轉之離心力流動於定盤之外側的研磨劑 ，係推向定盤之中心側，可再利於半導體基板之研磨。 申請專利範圍第2項之發明，係在申請專利範圍第1 項之構成上，附加上述研磨劑推壓手段，係保持在上述研 磨布上，將隨著上述定盤之旋轉的離心力擋接的研磨劑推 壓向上述定盤之中心側的推壓板之構成者。 申請專利範圍第3項之發明，係在申請專利範圍第2 項之構成上，附加上述推壓板，係與定盤徑方向交叉且研 磨時之定盤旋轉方向之前方側設成比後方側對於定盤徑方 向位於內側之構成者。 依照申請專利範圍第3項之構成，因推壓板之研磨時 之定盤旋轉方向之前方側比後方側位於定盤徑方向之內側 ，因此，隨著定盤之旋轉一面旋轉一面向外側流動之研磨 劑，係依推壓板而變更流動方向，成爲一面旋轉一面向定 盤之中心側流動。 此時，研磨劑之流動方向係可由研磨劑對於推壓板之 相對速度，及隨著研磨劑相撞於推壓板時之運動能的速度 向量之變化來考量，將推壓板之形狀，位置及方向考慮定 _盤之旋轉速度，研磨劑之黏性及研磨布之表面粗細等成爲 本紙張尺度適用中國國家標準( CNS ) A4規格（2丨Ο X 297公釐） 丨^----I---^丨裝-----丨訂------線 (請先閲讀背面之注意事項寫本頁) (. 經濟部中央標準局貝工消費合作杜印製 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（5 ) 最適當時，可確實地得到申請專利範圔第2項發明之效果 〇 申請專利範圍第4項之發明係在申請專利範圍第3項 之構成上，附加上述推壓板，係設成與研磨時之定盤旋轉 方向相反方向可旋轉之構成者。 申請專利範圍第5項之發明，係在申請專利範圍第2 項或第3項之構成上，附加上述推壓板，係在該推壓板之 下面與上述研磨布之上面之間，設置具有供應於上述研磨 布上之研磨劑之層厚度以下的間隔之構成者。 申請專利範圍第6項之發明，係在申請專利範圍第2 項或第3項之構成上。附加上述推壓板係具有柔軟性之材 料所構成*設成該推壓板之下面接觸於上述研磨布之上面 之構成者。 申請專利範圍第7項之發明，係在申請專利範圍第2 項或第3項之構成上，附加上述推壓板係具有：設於研磨 時之定盤旋轉方向之後方側並補集研磨劑的研磨劑捕集部 ，及設於研磨時之定盤旋轉方向之前方側並將上述研磨捕 集部所補集之研磨劑向上述定盤之中心側推壓的研磨劑推 壓部之構成者。 申請專利範圍第8項之發明，係在申請專利範圍第2 項或第3項之構成上，附加上述推壓板，係沿著上述定盤 之周緣部互相隔著間隙設置多數個之構成者。 申請專利範圍第9項之發明*係在申請專利範圍第1 項之構成上，附加上述研磨劑推壓手段，係將上述研磨布 本紙張尺度通用中國國家標準（CNS ) A4規格（210X297公釐） ~I ------------- 丨 installation 丨 ------- order-^ ------ line (please read the precautions on the back ff · this page) .. ( V Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperatives 4 5 4 Series 5 9 A7 B7 .1 / V. Description of the invention (2) The grinding device constituted above is a rotating plate 1 1 and a grinding agent 1 5, the polishing cloth 12 supplied, while pushing the semiconductor substrate 1.3 toward the polishing cloth 12 by the substrate holding head 14, rub the surface of the semiconductor substrate 13 at this time. At this time, there are uneven portions on the surface of the semiconductor substrate 13 At this time, in the convex portion of the semiconductor substrate 13, the polishing speed is increased due to the larger contact pressure with the polishing cloth 12. On the one hand, in the concave portion of the semiconductor substrate 13, the contact pressure with the polishing cloth 12 is increased. It becomes smaller and the polishing speed becomes slower. Therefore, the uneven portion on the surface of the semiconductor substrate 13 is relaxed and the surface of the semiconductor substrate 13 is made flat. This polishing technique is introduced, for example, in "January 1984 January" "Semiconductor World" _5_8 to 5 9 pages, _ or "/, So 1. id State Technology" _Guly, 1992 / Japan. Local version 3 2 to 37 pages, etc. Problems to be solved] However, the above-mentioned grinding device has the following problems. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Shelley Consumers' Cooperative. The supply of abrasives and the grinding rate are explained; As the supply of honing agent 15 increases, it becomes constant at a certain supply amount. Therefore, generally, an amount of abrasive 15 that is slightly larger than the supply rate with a certain polishing rate is supplied on the polishing cloth 12 However, as described above, since the abrasive cloth 15 is rotated on one side and the abrasive agent 15 is supplied on one side, the abrasive agent 15 flows to the outside of the abrasive cloth 12 due to the centrifugal force following the rotation of the platen 11. When the amount of Abrasive 1 5 is less than the specified amount *, the grinding rate will be reduced * In order to make up for the reduction of the grinding rate, the paper size will be increased by applying the Chinese National Standard (CNS) A4 specification (210X297 mm) 5 4 ^ 59 A7 B7. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) The pressure to push the semiconductor substrate 13 to the polishing cloth 12 is fine, but problems such as deterioration of the polishing characteristics occur. Therefore, Must be supplied often A slightly larger amount of abrasives than a certain rate of supply becomes a certain amount of abrasives, and the abrasives account for most of the cost of grinding. Thus, as shown in U.S. Patent No. 4,910,155, it is proposed to use a partition board to surround The surrounding of the polishing cloth prevents the abrasive from flowing out, and becomes a polishing device and a polishing method that do not flow out of the abrasive from the polishing cloth. However, according to the polishing device and the polishing method, it is not necessary to wait for the polishing cloth to occur. Objects are stored on the abrasive cloth. In addition, when washing the polished semiconductor substrate on a polishing cloth or trimming (adjusting the surface of the polishing cloth), if water is supplied to the polishing cloth, the water will not be removed from the polishing cloth like the abrasive. Outflow. Due to these, a new problem arises in that the concentration of the abrasive changes, and the polishing characteristics change. In view of the above, the object of the present invention is that the cleaning liquid on the abrasive cloth supplied is discharged from the abrasive cloth, but the abrasive supplied to the abrasive cloth is held on the abrasive cloth. ..... [Methods used to solve the problem] In order to achieve the above-mentioned purpose, the solution adopted by the invention in the first scope of the patent application is a polishing device for semiconductor substrates, which is characterized by having a flat surface and A fixed plate rotating around the vertical axis of the flat surface as a center, a polishing cloth placed on the flat surface of the fixed plate, and a abrasive supply means for supplying an abrasive on the above-mentioned polishing cloth, and maintaining a half- -----—! — 丨 Installation ------- Order ------ Line ··. (Please read the note on the back first ^ _Fill in this page) This paper size is applicable to Chinese standards (CNS > A4 specification (210X297 mm) 1/1/5 4 4 ^ 5 9 at Β7 V. Description of the invention (4) The substrate holding means for the conductor substrate and the polishing cloth is pressed, and will be supplied to the above polishing The cloth is constituted by the abrasive pressing means that presses the abrasive flowing on the outside of the fixed plate with the centrifugal force of the rotation of the fixed plate to the center side of the fixed plate. Constitute the centrifugation with the rotation of the fixed plate by means of abrasive pressing The abrasive flowing on the outside of the fixed plate is pushed toward the center side of the fixed plate, which can further facilitate the polishing of semiconductor substrates. The invention in the scope of patent application No. 2 is added to the structure of the scope of patent application No. 1 in addition to the above The abrasive pressing means is a component that is held on the abrasive cloth and presses the abrasive that is blocked by the centrifugal force of the rotation of the fixed plate toward the pressing plate on the center side of the fixed plate. Patent Application Range 3 The invention of item 1 is added to the structure of item 2 of the scope of patent application, the above-mentioned pressing plate is added, and the front side of the fixed plate rotation direction which intersects the fixed plate diameter direction and is set at the position of the fixed plate diameter direction is greater than the rear side. The structure of the inner side. According to the structure of the scope of patent application No. 3, the front side of the fixed plate rotation direction during the grinding of the pressing plate is located inside the fixed plate diameter direction than the rear side. Therefore, one side rotates as the fixed plate rotates. The abrasive flowing toward the outside changes the flow direction according to the pressing plate, so that it rotates while facing the center side of the fixed plate. At this time, the abrasive flow direction can be determined by The relative speed of the abrasive to the pressing plate and the change in the velocity vector of the kinetic energy when the abrasive collides with the pressing plate are taken into consideration. The shape, position and direction of the pressing plate are taken into account the rotation speed of the fixed disk. The tackiness and the surface thickness of the abrasive cloth become the paper standard applicable to the Chinese National Standard (CNS) A4 specification (2 丨 〇 X 297 mm) 丨 ^ ---- I --- ^ 丨 Packing -----丨 Order ------ line (please read the notes on the back to write this page) (. Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperation, Du printed by the Ministry of Economic Affairs, printed by the Consumer Standards Cooperative of Central Standards Bureau, A7 B7, V. Inventions Explanation (5) When it is most appropriate, the effect of the second invention of the patent application scope can be reliably obtained. The invention of the fourth scope of the patent application is based on the structure of the third scope of the patent application. A component that can rotate in the opposite direction to the rotation direction of the fixed plate during grinding. The invention in the scope of the patent application No. 5 is the constitution of the scope of the patent application in the second or third scope, with the above-mentioned pressing plate attached between the lower surface of the pressing plate and the upper surface of the abrasive cloth, and is provided with The structure of the interval below the thickness of the layer of the abrasive on the polishing cloth. The invention in the sixth scope of the patent application is based on the composition of the second or third scope of the patent application. The above-mentioned pressing plate is made of a flexible material. * The lower surface of the pressing plate is in contact with the upper surface of the polishing cloth. The invention claimed in item 7 of the scope of patent application is based on the structure of item 2 or 3 of the scope of patent application, in addition to the above-mentioned pressing plate, which is provided on the side behind the rotation direction of the fixed plate during grinding and which collects the abrasive An abrasive-capturing section and a polishing-pressing section that is provided on the front side of the direction of rotation of the fixed plate during polishing and pushes the abrasive replenished by the polishing-collecting section toward the center side of the fixed plate. . The invention in the eighth scope of the patent application is the structure in which the second or third scope of the patent application is added, and the above-mentioned pressing plate is added, and a plurality of structures are provided along the periphery of the fixed plate with a gap between each other. The invention of item 9 of the scope of patent application * is based on the structure of item 1 of the scope of patent application, and the above-mentioned abrasive pressing means is added to the paper size of the above-mentioned abrasive cloth. The general Chinese National Standard (CNS) A4 specification (210X297 mm) ) ~

丨：一-^--：---1--— 裝 —-----訂------線 (請先閲讀背面之注意事項#.'L為本頁) V 4 5 4^59 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（6 ) 上之研磨劑噴出向上述定盤之中心側推壓的氣體的氣體噴 出手段之構成者。 申請專.利範圍第1 0項之發明，係在申請專利範圍第 9項之構成上，附加上述氣體噴出手段’係沿著上述定盤 之周緣部設置多數部位之構成者。 申請專利範圍第1 1項之發明，係在申請專利範圍第 1項之構成上，附加上述研磨劑推壓手段，係設在上述研 磨布之上面成爲與該研磨布接觸之狀態或隔些微間隔之狀 態而與上述定盤相反方向旋轉的旋轉構件之構成者。 申請專利範圍第1 2項之發明，係在申請_利範圍第 1 Γ項之構成上，附加在上述旋轉構件之外周面設有凸部 之構成者。 申請專利範圍第1 3項之發明所採用之解決手段，係 將半導體基板之研磨裝置，其特徵爲：具備具有平坦面且 將與該平坦面垂直之軸爲中心旋轉的定盤，及載置於該定 盤之上述平坦面上的研磨布，及將研磨劑供應於上述研磨 布之上面的研磨劑供應手段，及保持半導體基板並對於研 磨布施以推壓的基板保持手段，及在上述定盤之周緣部， 藉固定成研磨時之定盤旋轉方向之前方側比後方側位於定 盤徑方向之內側，並將供應於上述研磨布上藉隨著上述定 盤之旋轉之離心力而流動於上述定盤之外側的研磨劑保持 在上述研磨布上的研磨劑保持構件之構成者。 依照申請專利範圍第1 3項之構成，一面隨著定盤之 旋轉而旋轉一面向外側流動之研磨劑，係依研磨劑保持構 (請先閱讀背面之注意事項本頁) 裝. 訂 線 本紙張尺度適用中國國家榇準（CNS ) A4規格（210X297公釐） -9 4 5 4 戌 5 9 1/ Α7 Β7 經濟部中央標準局員工.消費合作社印製 五、發明説明（7 ) 件變更流動之方向，被保持在研磨布上β 申請專利範圍第1 4項之發明，係在申請專利範圍第 1 3項之構成上，附加上述研磨劑保持構件，係在上述定 盤之周緣部互相隔著間隙設罝複數個之構成者。 申請專利範圍第1 5項之發明，係在申請專利範圍第 1 4項之構成上，附加上述複數個之研磨劑保持構件中相 鄰接的研磨劑保持構件，係從定盤方向觀看互相重疊之構 成者9 申請專利範圍第1 6項之發明，係在申請專利範圍第 1 3項之構成上，附加上述研磨劑保持構件，係設成對於 上述研磨布可向上方，下方或外方移動，上述基板保持構 件係在保持上述半導體基板之狀態，設成在與上述研磨布 平行之平面內移動之構成者。 申請專利範圍第1 7項之發明所採用之解決手段，係 將半導體基板之研磨方法，在具有平坦面且載置在與該平 坦面垂直之軸爲中心施以旋轉的定盤之平坦面上的研磨布 之上面供應研磨劑，而且一面將半導體基板向上述研磨布 推壓，一面研磨上述半導體基板的半導體基板之研磨方法 ，其特徵爲：具備將供應於上述研磨布上藉隨著上述定盤 之旋轉之離心力而流動於上述定盤之外側的研磨劑推壓向 上述定盤之中心側的研磨劑推壓工程所構成者。 ' 申請專利範圍第1 8項之發明，係在申請專利範圍第 1 7項之構成上，附加上述研磨推壓工程，係包括藉由保 持於上述研磨布上之推壓板，將上述研磨布上之研磨劑推 (請先閲讀背面之注意事項再本頁) 裝. 訂 铼 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） _ 10 A7 B7 4 5 4^5>9 五、發明説明（8 ) 壓向上述定盤之中心側的工程之構成者。 申請專利範圍第1 9項之發明，係在申請專利範圍第 1 8項之構成上，附加上述研磨劑推壓工程，係包括藉由 設成與定盤徑方向徑方向交叉且研磨時之定盤旋轉方向的 前方側比後方側位於定盤徑方向之內側的推壓板，將上述 研磨布上之研磨劑推壓向上述定盤之中心側的工程之構成 者。 申請專利範圍第2 0項之發明，係在申請專利範圍第 1 8項或第1 9項之構成上，附加上述研磨劑推壓工程， 係包括藉由設於與上述研磨布之上面之間具有比供應於上 述研磨布上之研磨劑之層厚以下之間隔的推壓板，將上述 研磨布上之研磨劑推壓向上述定盤之中心側的工程之構成 者。 申請專利範圍第2 1項之發明，係在申請專利範圍第 1 8項或第1 9項之構成上，附加上述研磨劑推壓工程， 係包括藉由具有柔軟性之材料所構成，設成下面接觸於上 述研磨布之上面，將上述研磨布上之研磨劑推壓向上述定 盤之中心側的工程之構成者。 申請專利範圍第2 2項之發明，係在申請專利範圍第 1 8項或第1 9項之構成上，附加又具備藉將上述定盤向 與研磨時之旋轉方向相反方向旋轉，排出供應於上述研磨’ 布上之洗淨液的洗淨液排出工程之構成者。 ... .. . 申請專利範圍第2 3項之發明，係在申請專利範圍第 1 7項之構成上，附加上述研磨劑推壓工程，係包括將氣 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I'1. .. 裝 ^ 訂 一. 線 (請先閱讀背面之注意事項長k本頁· ) 經濟部中央標準局員工消費合作社印製 454^59 A7 B7 經濟部中央標隼局員工消費合作社印製 五、發明説明（9 ) 體向上述定盤之中心側噴出，並將上述研磨布上之研磨劑 推壓向上述定盤之中心側的工程之構成者。 申請專利範圍第2 4項之發明，係在申請專利範圍第 1 7項之構成上，附加上述研磨劑推壓工程，係包括藉由 設在上述研磨布之上面成爲與該研磨布接觸之狀態或隔稍 微間隔之狀態而與上述定盤相反方向旋轉的旋轉構件，將 上述研磨布上之研磨劑推壓向上述定盤之中心側的工程之 構成者。 申請專利範圍第2 5項之發明所採用之解決手段，係 將半導體基板之研磨方法，在具有平坦面且載置在與該平 坦面垂直之軸爲中心施以旋轉的定盤之平坦面上的研磨布 之上面供應研磨劑，而且一面將半導體基板向上述研磨布 推壓，一面研磨上述半導體基板的半導體基板之研磨方法 ，其特徵爲：具備在上述定盤之周緣部，藉固定成研磨時 之定盤旋轉方向之前方側比後方側位於定盤徑方向之內側 的研磨劑保持構件，將供應於上述研磨布上藉隨著上述定 盤之旋轉之離心力而流動於上述定盤之外側的研磨劑保持 在上述研磨布上的研磨劑保持工程之構成者。 依照申請專利範圍第2 5項之構成*因一面隨著定盤 之旋轉而旋轉一面向外側流勛的研磨劑，係藉研磨劑保持 構件改變流動之方向，一面旋轉一面向定盤之中心側流動 ，故研磨劑係確實地被保持在研磨布上。 申請專利範圍第2 6項之發明，係在申請專利範圍第 2 5項之構成上，附加上述研磨劑保持工程，係包括藉在 本紙張尺度適用中國國家梯準（CNS ) A4規格(210X297公釐） ' _ -12 - (請先閲讀會面之注意事項一^^本頁) -裝. 訂 線 經濟部中央標準局貝工消費合作社印製 454^5 9 ，〆 A7 B7 五、發明説明（10) 上述定盤之周緣部互相隔著間隙所設置的複數個之上述研 磨劑保持構件，將上述研磨布上之研磨劑保持在上述研磨 布上的工程之構成者。 申請專利範圍第2 7項之發明，係在申請專利範圍第 2 6項之構成上，附加上述研磨劑保持工程，係包括複數 個之上述研磨劑保持構件中互相相鄰接之研磨劑保持構件 藉從定盤徑方向觀看互相重疊的複數個之上述研磨劑保持 構件，將上述研磨布上之研磨劑保持在上述研磨布上的工 程之構成者。 申請專利範圍第2 8項之發明*係在申請專利範圍第 2 5項之構成上，附加又具備藉將上述定盤向與研磨時之 旋轉方向旋轉，排出供應於上述研磨布之洗淨液的洗淨液 的洗淨液排出工程之構成者* 申請專利範圍第2 9項之發明，係在申請專利範圍第 2 5項之構成上，又具備將上述研磨劑保持構件對於上述 研磨布可向上方，下方或外方移動的研磨劑保持構件移動 工程，及藉將上述半導體基板移動在與上述研磨布平行之 平面內移動，從上述研磨布突出上述半導體基板之至少一 部分的基板移動工程之構成者。 (發明之實施形態） 以下，一面參照圖式一面說明本發明之實施形態的研 磨裝置及研磨方法。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）_ 13 _ I.- | ; 裝 -I 訂 線 (請先閱讀肾面之注意事項rk本頁) V, 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（11) (第1實施形態） 第1圖係表示本發明之第1實施形態之研磨裝置的概 略斜視圖。 在第1圖，1 1係定盤，該定盤1 1係具有：具平坦 之表面而由剛體所成的研磨布保持部11a ，及從該研磨 布保持部1 1 a之下面向垂直方向延伸的旋轉軸1 1 b， 及旋轉該旋轉軸1 1 b的未予圖示的旋轉手段，在研磨布 保持部1 1 a之上面密貼有例如發泡聚胺酯所成的研磨布 12。又，1 5係包括砥粒之研磨劑，該研磨劑1 5係從 研磨劑供應管1 6每次所定量供應於研磨布1 2上，藉旋 轉定盤1 1及基板保持頭1 4，供應於研磨布1 2與半導 體基板1 3之間。 作爲第1實施形態之特徵，在研磨布1 2之周緣部之 上，設有作爲在骸研磨布1 2上之噴出壓縮空氣之研磨劑 推壓手段的壓縮空氣供應管1 7，該壓艙空氣供應管17 之噴出口 1 7 a係向定盤1 1之旋轉中心開口。噴出口 1 7 a之口徑係例如約3 m m，從該噴出口 1 7 a所噴射 之壓縮空氣的流速係設定在約5 m/秒。由此，從壓縮空 氣供應管1 7之噴出口 1 7 a所噴射的壓縮空氣，係從研 磨劑供應管1 6供應於研磨布1 2上，藉隨著定盤11之 旋轉的離心力可將向外方之研磨劑1 5推回向定盤1 1之-中心部側，研磨劑1 5係往復在定盤1 1之中心部側與周 緣部側之間下將砥粒均勻地供應於半導體基板13。 又，噴出口 1 5 a之口徑及壓縮空氣之流速，係並不 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） —... ； 裝. HH ~~ 線 (請先閲讀背面之注意事項|^寫本頁).： '丨 5 4 4 ^ 5> 9, A7 >_;_51____ 五、發明説明（12) 被限定於上述者，可將研磨布1 2!上之研磨劑1 5適當地 選擇成推回至定盤1 1之中心部側者。壓縮空氣供應管 1 7之噴出口 1 7係開口向定盤1 1之旋轉中心，惟由噴 出口 1 7所噴出之氣體可將研磨布1 2上之研磨劑1 5向 定盤11之旋轉中心側流動之方向者任何方向均可以。 壓縮空氣供應管1 7之噴出口 17 a之數係並不特別 加以限定，惟例如設置5，6個之複數個較理想。 所噴出之氣體係作爲壓縮空氣，惟使用其他之任何氣 體也能得到本實施形態之效果。尤其是，藉由研磨劑之種 類，對於研磨劑噴出在化學上安定之惰性氣體例如氮氣體 較理想。 在上述第1實施形態，研磨劑1 5係包括砥粒，惟不 包括砥粒之液體也可以，而且可廣泛地使用具有流動性者 。此乃在以下所述之各貧施形態也同樣。 (第2實施形態） 第2圖及第3圖係表示本發明之第2實施形態之研磨 裝置的概略構造，第2圖係斜視圖，而第3圖係平面圖 在第2實施形態中，具備與第1實施形態同樣之定盤 11，研磨布12,基板保持頭1 4及研磨劑供應管1 6 ，半導體基板1 3係一面迴轉一面壓接於定盤1 1上之研 磨布1 2，研磨劑1 5係從研磨劑供應管1 6每次所定量 地供應於研磨布1 2上。 作爲第2實施形態之特徵，在研磨布1 2之上，設有 i錄尺度適用中國國家標準（CNS)爾（臟2_ ) - 15 _ — ~ I---- ：---II1^------tr------ — 線· (請先閲讀背面之注意事^^寫本頁) 經濟部中央標準局員工消費合作社印製 Λ5 4^ 5 9y a? B7 經濟部中央標準局員工消費合作社印製 五、發明説明（) 將例如發泡聚胺酯所成之研磨劑1 5作爲向定盤1 Y之中 心部側推壓之研磨劑推壓手段的帶板狀研磨劑推壓構件 1 8成爲與研磨布1 2滑接之狀態。如第3圖所示，研磨 劑推壓構伴1 8係固定成徑方向之內側部分1 8 a對於定 盤1 1之半徑位於研磨時之旋轉方向前方側且徑方向之外 側部分1 8 b對於定盤1 1之半徑位於研磨時之旋轉方向 後方側，具體而言，固定成以定盤1 1之旋轉中心爲中心 之圓S與研磨劑推壓構件1 8之交點的圓S之切線L與研 磨劑推壓構件1 8以1 2 0°之角度交叉。 由此，從研磨劑供應管1 6供應於研磨布1 2上，藉 隨著定盤1 1之旋轉的離心力向定盤11之外側的研磨劑 1 5，係藉研磨劑推壓構件1 8之表面推回向定盤1 1之 中心部側，以普遍地研磨布1 2上之狀態下供應於半導體 基板1 3。又，在排出研磨布1 2上之水等之冼淨液時’ 當向研磨時之旋轉方向相反方向旋轉時，則洗淨液擋接於 研磨劑推壓構件1 8之背面而促進排出、 又，研磨劑推壓構件1 8之長度及角度係可適當地選 擇將研磨布1 2上之研磨劑15推回定盤1 1之中心部側 〇 在第2實施形態中，研磨劑推壓構件1 8之角度係不 變，惟代替此，隨著研磨劑1 5之黏度或定盤1 1之旋鹌Γ 速度，可將研磨劑Γ 5有效率地推回向定盤1 1之中心部 側，將研磨劑推壓構件18對定盤1 1之半徑的角度設成 可變也可以。 請 先 閱 背. 面 之 注 項 本衣 頁 訂 線 本紙張尺度適用中國國家標準（CNS > A4規格（2丨OX 297公釐）_ 16 4 5 4859 A7 B7 經濟部中央標準局員工消費合作社印装 五、發明説明（14 ) 又，固定劑推壓構件1 8係被固定’惟代替此’定盤 11之研磨時對於旋轉方向設成相對地負之方向旋轉也可 以。在此時，須將研磨劑推壓構件1 8設成不會與基板保 持頭1 4相撞之長度與位置。如此，則可將供應於研磨布 12上之洗淨液由背面有效率地排出至研磨劑推壓構件 18。 作爲研磨劑推壓構件1 8之材質’並不被限定於發泡 聚胺酯，其他任何物品均可以’惟使甩軟質材料’例如聚 乙嫌，聚丙烯，聚苯乙烯，聚氯乙嫌，特氟綸系材料或丁 二烯橡膠類等之橡膠時，如第4圖所示’研磨劑推壓構件 1 8變形而追隨於研磨布1 2之表面較理想。 又，研磨劑推壓構件1 8係不會與研磨布1 2滑接， 在與研磨布1 2之間具有可將研磨劑1 5向定盤1 1之中 心部側推回之程度的大小之間隙（研磨劑1 5之層厚以下 之間隙）也可以。如此，不會產生隨著研磨劑推壓構件 1 8與研磨布1 2之間的滑接的滓，故較理想。 第5 ( a )〜（d )圖及第6 ( a )〜（d )圖係分 別表示研磨劑推壓構件1 8之形狀及數的變形例。如第5 (a )〜（d )圖及第6 (a)〜（d)圖所示，研磨劑 推壓構件1 8之形狀及數係並不被限定’隨著研磨劑1 5 之黏度或定盤1 1之旋轉速度，可適當地變更。研磨劑推 壓構件1 8之徑方向之外側部分具有補集研磨劑1 5之功 能，而研磨劑推壓構件1 8之徑方向之內側部分具有將補 集之研磨劑1 5向基板保持頭14側推壓之功能，如第5 丨-^---r------裝丨-----訂----------線 (請先聞讀背面之注意事項本頁) /ί 卜紙張尺度適用中國國家標準^阳^^規格”⑴^们公釐） -17 - Ύ A7 B7 經濟部中央標準局員工消費合作杜印製 五、發明説明（15 ) (b )圖或第5 ( c )圖所示，也可將研磨劑推壓構件 18折彎成<形或凹狀。 以下，一面參照第7圖一面說明使用第2實施形態之 研磨裝置所實行的研磨方法。 首先，如第7 ( a )圖所示，將半導體基板1 3以研 磨面作爲下方裝設在基板保持頭1 4之後壓接於研磨布 12 上。 、 然後，如第7(b)圖所示，從研磨劑供應管16將 研磨劑1 5供應於研磨布1 2上的定盤1 1之中心部附近 ，而且分別將定盤1 1及基板保持頭1 4向反時鐘方向旋 轉9如此，因隨著定盤1 1之旋轉的離心力，研磨劑1 5 係向研磨布12之外側流動，因而供應於半導體基板1 3 與研磨布12之界面。 如第7 ( c )圖所示，研磨布1 2上之研磨劑1 5係 因隨著定盤1 1之旋轉的離心力而流向研磨布1 2之外側 ，惟定盤Γ1在約旋轉一次之期間擋接於研磨劑推壓構件 1 8，回流到研磨布1 2之中心部側，而再使用於半導體 基板1 3之研磨。 完成對於半導體基板1 3之研磨時，爲了半導體基板 1 3之研磨面的洗淨或洗淨研磨布12上之研磨劑1 5等 ，在研磨布1 2上供應水等之洗淨液。然後，爲了排出殘^ 留在定盤1 1及研磨布1 2上之洗淨液等，將定盤1 1向 順時鐘方向（C W )旋轉。如此，洗淨液係藉由研磨劑推 壓構件1 8之背面，因向研磨布1 2之外方推出，因此， ：---_----^---#11 (請先閱讀背面之注意事項fiKk本頁) 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） —18 - 4 經濟部中央標準局員工消費合作社印製 5 4^5 9，〆 A7 B7 五、發明説明（16) 比未設有研磨劑推壓構件18時可有效率地實行洗淨液之 排出。 又，在上述之研磨方法，係在供應研磨劑1 5之後旋 轉定盤1 1及基板保持頭1 4，惟若在定盤1 1之旋轉時 供應有研磨劑1 5，則可適當地變更定盤1 1及基板保持 頭1 4之旋轉時刻與研磨劑1 5之供應時刻。 又，定盤11之旋轉方向係在研磨時作爲C CW，而 在洗淨液之排出時作爲C W，惟在排水時未變更定盤1 1 之旋轉方向時，僅降低洗淨液之排出效果，而完全不會變 更依研磨劑1 5所產生的研磨效果。 供應研磨劑1 5之位置，係即使不是在研磨布1 2上 的定盤1 1之中心部，而位於比研磨劑推壓構件1 8之外 側端部在內側也可以》 (第3之實施形態） 第8圖係表示本發明之第3實施形態之研磨裝置之概 略構造的斜視圖，在第3實施形態，係具備：與第1實施 形態同樣之定盤1 1，研磨布12，基板保持頭1 4及研 磨劑供應管1 6，半導體基板1 3係一面旋轉一面壓接於 定盤1 1上之研磨布1 2，而研磨劑1 5係從研磨劑供應 管1 6每次所定量地供應於研磨布1 2上。' 作爲第3實施形態之特徵，係在研磨布1 2上之基板 保持頭1 4的相反側，設有與研磨布1 2相接觸之狀態或 隔著些微間隙所設置之作爲可旋轉之研磨劑推壓手段的圓 本紙張尺度適用中國國家標準（CNS ) A4規格（210.X297公釐） _ -19 - I-1^ ^ ^ 裝 訂 線 (請先閱讀背面之注意事項本頁) 4 經濟部中央標準局員工消費合作社印製 4^5 9 1/ A7 ______B7___ 五、發明説明（17 ) 形之旋轉構件2 1。旋轉構件2 1之直徑係設成比基板保 持頭1 4之直徑大，旋轉構件21之一部分係從研磨布 1 2之周緣部向外方突出。又，旋轉構件2 1係在研磨時 向與定盤11相反方向旋轉，而在排出洗淨液等時則向與 定盤相同方向旋轉。 由此，如第9圖所示，從研磨劑供應管16供應於研 磨布1 2上且藉隨著定盤1 1之旋轉的離心力向定盤1 1 之外側的研磨劑1 5，係擋接於旋轉構件21之外周面後 ，沿著與定盤11相反方向旋轉之旋轉構件2 1之外周面 向定盤1 1的中心部側推回，在廣泛普及於研磨布1 2上 之狀態下，供應於半導體基板1 3 β又，在第9圖，研磨 布1 2上之箭號，係概念地表承研磨時之研磨劑1 5之流 動方向。此時，在研磨布12上的周緣，因藉研磨劑15 之表面張力而儲存研磨劑1 5 a，惟因旋轉構件2 1之一 部分從研磨布12之周緣部向外方突出，因此研磨劑 1 5 a係擋接於旋轉構件2 1之後，藏著旋轉構件2 1之 旋轉推回向定盤Γ1之中心部側。 一方面，在排出研磨布1 2上之洗淨液時’因洗淨液 係沿著向與定盤1 1相同方向旋轉之旋轉構件2 1之外周 面流動向定盤1 1之外側，因此，促進洗淨液之排出。 又，旋轉構件2 1之平面形狀係並不被限定於圓形’’ 惟如第1 0圖所示，若在旋轉構件2 1之外周面設置凸部 2 1 a時，則研磨劑1 5沿著向與定盤11相反方向旋轉 之旋轉構件2 1之外周面推回向定盤Γ 1之中心部側的效 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先聞讀背面之注意事項寫本頁) -20 - 經濟部中央標準局員工消費合作社印製 4 5 4乂 5 9 A7 y \ B7 五、發明説明（18) '果被促進。又’在第3實施形態，係作爲研磨劑推壓手段 設置專用之旋轉構件2 1，惟代替專用之旋轉構件2 1 ， 設置與基板保持頭1. 4相同形狀之旋轉構件也可以》 (第4之實施形態） 第1 1圖及第1 2圖係表示本發明之第4實施形態之 研磨裝置的概略構造，第1 1圖係斜視圖，而第1 2圖係 平面圖。 在第4之實施形態，係具備，與第1實施形態同樣之 定盤1 1 ，研磨布1 2，基板保持頭1 4及研磨劑供應管 1 6，半導體基板1 3係一面旋轉一面壓接於定盤1 1上 之研磨布1 2，而研磨材1 5係從研磨劑供應管1 6每次 所定量地供應於研磨布12上。 作爲第4實施形態之特徵，研磨布1 2之徑係比定盤 1 1之徑小，而研磨布1 2係載置於定盤1 1之中央部。 又，在定盤1 1之周緣部1 1 c之上，沿著研磨布1 2之 外周面設有將例如聚氯乙烯所成之研磨劑1 5作爲保持在 研磨布12上之研磨劑保授手段的多數帶板狀的研磨劑保 持構件1 9 »各硏磨劑保持構件1 9.係具有其上部成爲比 研磨布1 2之表面較高之高度，而且設成研磨時之旋轉.方 向的前方側比後方側位於研磨布1 2之徑方向的內側，具' 體而言，研磨布1 .2對於外面之切線方向固定成約3 0度 之角度。 •在第2實施形態，研磨劑推壓構件1 8係不會與研磨 本紙張尺度適用中國國家標準（ CNS ) A4規格（210X297公釐） 1 ^ 裝 一訂 .線 (請先閱讀會面之注意事項再^k本頁) -21 - 4丨: one-^-: --- 1 ---- install ------- order ------ line (please read the note on the back #. 'L for this page) V 4 5 4 ^ 59 A7 B7 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. The description of the invention (6). The abrasive ejection means is a gas ejection means that ejects the gas that is pushed toward the center side of the plate. The invention claimed in item 10 of the patent application scope is the structure in item 9 of the patent application scope, and the above-mentioned gas ejection means is a structure in which a plurality of parts are provided along the periphery of the fixed plate. The invention of item 11 in the scope of patent application is based on the structure of item 1 in the scope of patent application, and the above-mentioned abrasive pressing means is added to the above-mentioned abrasive cloth in a state in contact with the abrasive cloth or at a slight interval. The component of the rotating member that rotates in the opposite direction to the fixed plate in the state. The invention in the 12th scope of the patent application is a structure in which a convex portion is provided on the outer peripheral surface of the rotating member in addition to the structure in the first Γ of the application scope. The solution adopted by the invention in item 13 of the scope of patent application is a polishing device for a semiconductor substrate, which is characterized by having a fixed plate having a flat surface and rotating an axis perpendicular to the flat surface as a center, and a mounting device. A polishing cloth on the flat surface of the fixing plate, a polishing material supply means for supplying an abrasive on the polishing cloth, and a substrate holding means for holding and pressing the semiconductor substrate on the polishing cloth, and The peripheral edge of the disk is fixed to the front side of the disk rotation direction inside the disk diameter direction than the rear side during grinding, and will be supplied to the polishing cloth by the centrifugal force following the rotation of the disk. A constituent of an abrasive holding member that holds the abrasive on the outside of the platen on the polishing cloth. According to the composition of item 13 of the scope of the patent application, one side of the abrasive that flows outward with the rotation of the fixed plate is based on the abrasive holding structure (please read the precautions on the back page). Binding book Paper size applies to China National Standards (CNS) A4 (210X297 mm) -9 4 5 4 戌 5 9 1 / Α7 Β7 Employees of the Central Standards Bureau of the Ministry of Economic Affairs. Printed by Consumer Cooperatives 5. Invention Changes (7) The direction of the invention is held on the abrasive cloth. The invention in item 14 of the scope of patent application is based on the structure in the scope of item 13 of the patent application. The above-mentioned abrasive holding member is added and separated from each other on the peripheral edge of the fixed plate. A plurality of constituents are set along the gap. The invention of item 15 of the scope of patent application is based on the structure of item 14 of the scope of patent application, and the adjacent abrasive holding members of the plurality of abrasive holding members are added to each other when viewed from the direction of the fixed disk. The constituent 9 of the invention in the 16th scope of the patent application is based on the structure in the 13th scope of the patent application, and the above-mentioned abrasive holding member is added so that the above-mentioned polishing cloth can be moved upward, downward or outside. The substrate holding member is configured to move in a plane parallel to the polishing cloth while holding the semiconductor substrate. The solution adopted by the invention in item 17 of the scope of patent application is a method of polishing a semiconductor substrate on a flat surface having a flat surface and placed on a flat plate that rotates around an axis perpendicular to the flat surface. A polishing method for supplying a polishing agent on the polishing cloth and pressing the semiconductor substrate against the polishing cloth and polishing the semiconductor substrate of the semiconductor substrate while grinding the semiconductor substrate is characterized by comprising: The centrifugal force caused by the rotation of the disk pushes the abrasive flowing on the outside of the fixed plate to the abrasive pressing process of the center of the fixed plate. '' The invention in the 18th scope of the patent application is based on the constitution in the 17th scope of the patent application, and the above-mentioned grinding and pressing process is added, which includes the above-mentioned grinding cloth by a pressing plate held on the above-mentioned grinding cloth. Abrasive push (please read the precautions on the back first and then this page). The size of this paper is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) _ 10 A7 B7 4 5 4 ^ 5 > 9 V. Description of the invention (8) The constituent of the process pressed toward the center side of the above-mentioned fixed plate. The invention of item 19 in the scope of patent application is based on the structure of item 18 in the scope of patent application, and the above-mentioned abrasive pressing process is added, which includes the determination when grinding is set to intersect with the diameter of the fixed disk in the radial direction. A construction member that works by pressing the pressing plate on the polishing cloth toward the center side of the fixed plate with the pressing plate located on the inner side of the fixed plate diameter direction than the rear side in the rotating direction of the plate. The invention of the scope of patent application No. 20 is the constitution of the scope of the patent application No. 18 or No. 19, and the above-mentioned abrasive pressing process is added. A component of a process in which a pressing plate having an interval smaller than the layer thickness of the abrasive supplied on the polishing cloth pushes the abrasive on the polishing cloth toward the center side of the platen. The invention in the 21st scope of the patent application is based on the structure of the 18th or 19th scope of the patent application, and the above-mentioned abrasive pressing process is added. The invention consists of a flexible material and is set to The person who is in contact with the upper surface of the polishing cloth and presses the abrasive on the polishing cloth toward the center side of the fixed plate. The invention of item 22 of the scope of patent application is based on the structure of item 18 or item 19 of the scope of patent application, in addition to having the above-mentioned fixed plate rotated in the direction opposite to the direction of rotation during grinding, and discharged and supplied to Constructor of the cleaning liquid discharge process of the cleaning liquid on the above-mentioned polishing cloth. ..... The invention in the 23rd scope of the patent application is based on the composition in the 17th scope of the patent application, and the above-mentioned abrasive pressing process is added, which includes the application of the Chinese paper standard (CNS) ) A4 size (210X297mm) I'1... ^ Order one. (Please read the note on the back first long page on this page ·) Printed by the Central Consumers Bureau of the Ministry of Economic Affairs Consumer Cooperative 454 ^ 59 A7 B7 Economy Printed by the Ministry of Standards and Technology Bureau's Consumer Cooperatives V. Invention Description (9) Projector who sprays the body toward the center side of the plate and pushes the abrasive on the cloth to the center side of the plate . The invention in item 24 of the scope of patent application is based on the structure in item 17 of the scope of patent application, and the above-mentioned abrasive pressing process is added to the state in which the abrasive cloth is placed in contact with the abrasive cloth. Or a structured member that presses the abrasive on the polishing cloth toward the center side of the fixed plate of a rotating member that rotates in a direction opposite to the fixed plate at a slightly spaced state. The solution adopted by the invention in the 25th aspect of the patent application is a method for polishing a semiconductor substrate on a flat surface having a flat surface and placed on a flat surface that rotates around an axis perpendicular to the flat surface. A polishing method for supplying a polishing agent on a polishing cloth and pressing the semiconductor substrate against the polishing cloth while polishing the semiconductor substrate of the semiconductor substrate while polishing the semiconductor substrate is characterized in that the polishing method is provided on the peripheral edge portion of the fixed plate and fixed for polishing. The abrasive holding member, which is located on the inner side of the diameter direction of the fixed plate than the rear side of the fixed plate in the direction of rotation of the time, will be supplied to the abrasive cloth by the centrifugal force following the rotation of the fixed plate to flow outside the fixed plate. The constituent of the abrasive holding process for holding the abrasive on the polishing cloth. The composition according to item 25 of the scope of patent application * Because the one side rotates with the rotation of the fixed plate, the abrasive facing the outside flow, the abrasive holding member changes the flow direction, and the other side rotates and faces the center side of the fixed plate Since it flows, the abrasive is reliably held on the polishing cloth. The invention in the 26th scope of the patent application is based on the composition of the 25th scope of the patent application, and the above-mentioned abrasive retention engineering is added, which includes the application of the Chinese National Standard (CNS) A4 specification (210X297) ()) _ -12-(Please read the notes for the meeting first ^^ this page)-Binding. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed 454 ^ 5 9, 〆A7 B7 V. Description of the invention ( 10) A constituent of a process in which a plurality of the abrasive holding members provided on the peripheral edge portion of the fixed plate with a gap therebetween to hold the abrasive on the abrasive cloth on the abrasive cloth. The invention in item 27 of the scope of patent application is based on the composition in item 26 of the scope of patent application, in addition to the above-mentioned abrasive holding process, and includes a plurality of abrasive holding members adjacent to each other among the above-mentioned abrasive holding members. A constituent of a process for holding the abrasive on the abrasive cloth on the abrasive cloth by viewing the plurality of abrasive holding members overlapping each other from the direction of the fixed plate diameter. The invention of item 28 in the scope of patent application * is based on the structure in item 25 of the scope of patent application, and additionally has the ability to rotate the above-mentioned fixed plate in the rotation direction during grinding and discharge the cleaning liquid supplied to the above-mentioned abrasive cloth. The constituents of the cleaning solution discharge process of the cleaning solution * The invention of claim 29 in the scope of patent application is based on the structure of claim 25 in the scope of patent application, and is provided with the above-mentioned abrasive holding member for the above-mentioned polishing cloth. A process of moving an abrasive holding member moving upward, downward, or outside, and a substrate moving process of moving at least a part of the semiconductor substrate from the polishing cloth by moving the semiconductor substrate in a plane parallel to the polishing cloth Constructor. (Embodiment of the invention) Hereinafter, a grinding apparatus and a grinding method according to an embodiment of the present invention will be described with reference to the drawings. This paper size is applicable to Chinese National Standard (CNS) A4 (210X297mm) _ 13 _ I.- |; Packing-I Thread (Please read the precautions on the kidney side first rk page) V, Central Bureau of Standards, Ministry of Economic Affairs Printed by employee consumer cooperative A7 B7 V. Description of the invention (11) (First embodiment) The first figure is a schematic perspective view showing a grinding apparatus according to a first embodiment of the present invention. In FIG. 1, a 11-series fixed plate includes an abrasive cloth holding portion 11 a made of a rigid body having a flat surface, and a vertical direction from below the abrasive cloth holding portion 1 1 a. The extended rotating shaft 1 1 b and a rotating means (not shown) that rotates the rotating shaft 1 1 b are closely adhered to the upper surface of the abrasive cloth holding portion 1 1 a with, for example, an abrasive cloth 12 made of foamed polyurethane. In addition, 15 is an abrasive including particles, and the abrasive 15 is supplied from the abrasive supply pipe 16 to the abrasive cloth 12 in a fixed amount each time. By rotating the fixed plate 11 and the substrate holding head 14, It is supplied between the polishing cloth 12 and the semiconductor substrate 13. As a feature of the first embodiment, a compressed air supply pipe 17 is provided above the peripheral edge portion of the polishing cloth 12 as a pressing means for the abrasive agent that sprays compressed air on the abrasive polishing cloth 12. The air outlet 17 a of the air supply pipe 17 is opened to the center of rotation of the fixed plate 11. The diameter of the ejection port 17a is, for example, about 3 mm, and the flow velocity of the compressed air sprayed from the ejection port 17a is set to about 5 m / sec. As a result, the compressed air sprayed from the outlet 17 a of the compressed air supply pipe 17 is supplied from the abrasive supply pipe 16 to the polishing cloth 12. The centrifugal force following the rotation of the fixed plate 11 can be used to The outer abrasive 15 is pushed back toward the center portion side of the fixed plate 11 and the abrasive 15 is reciprocated between the central portion side and the peripheral portion side of the fixed plate 11 to uniformly supply the granules to Semiconductor substrate 13. In addition, the diameter of the ejection port 15 a and the flow velocity of the compressed air are not applicable to the Chinese national standard (CNS) A4 specification (210X 297 mm) for this paper size —...; installed. HH ~~ line (please first Read the notes on the back | ^ write this page) .: '丨 5 4 4 ^ 5 > 9, A7 >_; _ 51____ 5. The description of the invention (12) is limited to the above, and the abrasive cloth 1 2! The abrasive 15 is appropriately selected to be pushed back to the center portion side of the fixed plate 11. The outlet 17 of the compressed air supply pipe 17 is opened to the center of rotation of the fixed plate 11; however, the gas sprayed from the outlet 17 can rotate the abrasive 15 on the abrasive cloth 12 to the fixed plate 11 The direction of flow on the center side can be any direction. The number of the ejection ports 17a of the compressed air supply pipe 17 is not particularly limited, but it is desirable to provide a plurality of 5, 6 for example. The ejected gas system is used as compressed air, but any other gas can be used to obtain the effect of this embodiment. In particular, it is preferable for the abrasive to emit a chemically stable inert gas such as a nitrogen gas by means of the abrasive. In the first embodiment described above, the abrasives 15 and 15 include particles, but liquids not including particles can be used, and those having fluidity can be widely used. This is the same for each of the poor application forms described below. (Second Embodiment) Figs. 2 and 3 show a schematic structure of a polishing apparatus according to a second embodiment of the present invention. Fig. 2 is a perspective view. Fig. 3 is a plan view of the second embodiment. The same fixed plate 11 as the first embodiment, the polishing cloth 12, the substrate holding head 14 and the abrasive supply pipe 16, and the semiconductor substrate 1 3 are the polishing cloth 12 which is crimped to the fixed plate 11 while rotating, The abrasive 15 is supplied from the abrasive supply pipe 16 to the abrasive cloth 12 in a predetermined amount. As a feature of the second embodiment, there are i-recording standards on the abrasive cloth 12 which are applicable to the Chinese National Standard (CNS), (dirty 2_)-15 _ — ~ I ----: --- II1 ^- ----- tr ------ — Line · (Please read the note on the back ^^ write this page first) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Λ5 4 ^ 5 9y a? B7 Central of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Standards Bureau. 5. Description of the invention () Using abrasives 15 made of foamed polyurethane as abrasive pressing means for pressing the central part of the fixed plate 1 Y with a plate-like abrasive. The pressing member 18 is brought into sliding contact with the polishing cloth 12. As shown in FIG. 3, the abrasive pressing member 18 is fixed to the inner portion 1 8 of the radial direction. The radius of the fixed plate 11 is located on the front side of the rotating direction and the outer portion 1 8 b of the radial direction during grinding. The radius of the fixed plate 11 is located on the rear side of the rotation direction during grinding. Specifically, the tangent of the circle S fixed at the intersection of the circle S centered on the rotation center of the fixed plate 11 and the abrasive pressing member 18 is specified. L intersects the abrasive pressing member 18 at an angle of 120 °. Thereby, the abrasive cloth is supplied from the abrasive supply pipe 16 to the abrasive cloth 12, and the centrifugal force following the rotation of the platen 11 is moved to the outside of the platen 15 by the centrifugal force to press the member 1 8 by the abrasive. The surface is pushed back toward the center portion side of the fixed plate 11 and is supplied to the semiconductor substrate 13 in a state of being generally polished on the cloth 12. In addition, when cleaning liquid such as water on the polishing cloth 12 is discharged ', when rotating in the opposite direction to the rotation direction during polishing, the cleaning liquid is blocked on the back surface of the abrasive pressing member 18 to promote drainage, In addition, the length and angle of the abrasive pressing member 18 can be appropriately selected to push the abrasive 15 on the abrasive cloth 12 back to the center portion side of the platen 11. In the second embodiment, the abrasive is pressed The angle of the component 18 is unchanged, but instead of this, the abrasive Γ 5 can be efficiently pushed back to the center of the fixed plate 11 with the viscosity of the abrasive 15 or the rotating speed Γ of the fixed plate 11 Alternatively, the angle of the radius of the abrasive pressing member 18 with respect to the fixed plate 11 may be changed. Please read the back first. The note above is for this page. The page size and the paper size are applicable to the Chinese national standard (CNS > A4 size (2 丨 OX 297 mm) _ 16 4 5 4859 A7 B7. Employee Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs Imprint 5. Description of the invention (14) In addition, the fixing agent pressing member 18 is fixed, but instead of this, the grinding of the fixed plate 11 can be rotated in a relatively negative direction when the rotation direction is set. At this time, The abrasive pressing member 18 must be set to a length and position that will not collide with the substrate holding head 14. In this way, the cleaning liquid supplied on the abrasive cloth 12 can be efficiently discharged from the back to the abrasive Pressing member 18. The material of the pressing member 18 as an abrasive is not limited to foamed polyurethane, and any other items can be 'only soft materials' such as polyethylene, polypropylene, polystyrene, poly In the case of vinyl chloride, Teflon-based materials, butadiene-based rubbers, as shown in Fig. 4, it is desirable that the abrasive pressing member 18 deforms and follows the surface of the polishing cloth 12. Also, polishing Agent pushing member 1 8 series will not slide with abrasive cloth 1 2 There may be a gap (a gap below the thickness of the layer of the abrasive 15) of a size sufficient to push the abrasive 15 back toward the center portion side of the platen 11 between the abrasive cloth 12 and the polishing cloth. The sliding contact between the pressing member 18 and the polishing cloth 12 due to the abrasive is generated, which is ideal. Figures 5 (a) to (d) and 6 (a) to (d) Modification examples of the shape and number of the abrasive pressing member 18 are shown in Figs. 5 (a) to (d) and Figs. 6 (a) to (d). The shape and the number system are not limited. The viscosity can be changed as appropriate with the viscosity of the abrasive 15 or the rotation speed of the fixed plate 11. The abrasive pressing member 18 has a supplementary abrasive 1 at the outer side in the radial direction. 5 function, and the inner part of the abrasive pressing member 18 in the radial direction has the function of pressing the collected abrasive 15 to the substrate holding head 14 side, such as the fifth 丨-^ --- r-- ---- Installation 丨 ----- Order ---------- line (please read and read the notes on the back page first) / ί The paper size is applicable to the Chinese national standard ^ 阳 ^^ Specifications "们 ^ mm) -17-Ύ A7 B7 Central Ministry of Economic Affairs Printed by Du Bureau staff for consumer cooperation. V. Invention Description (15) (b) or Figure 5 (c), the abrasive pressing member 18 can also be bent into a < or concave shape. Below, The polishing method performed using the polishing apparatus of the second embodiment will be described with reference to Fig. 7. First, as shown in Fig. 7 (a), the semiconductor substrate 13 is mounted on the substrate holding head 1 with the polishing surface as the lower side. 4 is then crimped to the polishing cloth 12. Then, as shown in FIG. 7 (b), the abrasive 15 is supplied from the abrasive supply pipe 16 to the vicinity of the center portion of the platen 11 on the polishing cloth 12 In addition, the fixed plate 11 and the substrate holding head 14 are rotated 9 in the counterclockwise direction. As the centrifugal force of the fixed plate 11 rotates, the abrasive 1 5 flows to the outside of the polishing cloth 12, so it is supplied to The interface between the semiconductor substrate 1 3 and the polishing cloth 12. As shown in FIG. 7 (c), the abrasive 15 on the polishing cloth 12 flows to the outside of the polishing cloth 12 due to the centrifugal force following the rotation of the fixed plate 11, but the fixed plate Γ1 is rotated about once. During this period, it is blocked by the abrasive pressing member 18, reflows to the center portion side of the polishing cloth 12, and is used for polishing the semiconductor substrate 13 again. When the polishing of the semiconductor substrate 13 is completed, in order to clean the polishing surface of the semiconductor substrate 13 or the abrasive 15 on the polishing cloth 12, the cleaning liquid such as water is supplied to the polishing cloth 12. Then, in order to discharge the cleaning liquid and the like remaining on the platen 11 and the polishing cloth 12, the platen 11 is rotated in a clockwise direction (C W). In this way, the cleaning liquid is pushed against the back surface of the member 18 by the abrasive, and is pushed out of the polishing cloth 12, so: ---_---- ^ --- # 11 (Please read first Note on the back of this page (fiKk page) The size of the paper used for this edition applies to Chinese National Standard (CNS) A4 (210X297 mm) — 18-4 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5 4 ^ 5 9, 〆A7 B7 5 Explanation of the invention (16) The cleaning liquid can be discharged more efficiently than when no abrasive pressing member 18 is provided. In the above-mentioned polishing method, the fixed plate 11 and the substrate holding head 14 are rotated after the abrasive 15 is supplied. However, if the abrasive 15 is supplied when the fixed plate 11 is rotated, it can be appropriately changed. The timing of rotation of the fixed plate 11 and the substrate holding head 14 and the timing of supply of the abrasive 15. In addition, the rotation direction of the platen 11 is C CW during polishing, and CW when the cleaning liquid is discharged. However, when the rotation direction of the platen 1 1 is not changed during drainage, only the discharge effect of the cleaning liquid is reduced. Without changing the polishing effect produced by the abrasive 15 at all. The position where the abrasive 15 is supplied is not limited to the center portion of the fixed plate 11 on the abrasive cloth 12, but the end portion on the outside of the abrasive pressing member 18 may be inward. (The third implementation (Form) Fig. 8 is a perspective view showing a schematic structure of a polishing apparatus according to a third embodiment of the present invention. In the third embodiment, it is provided with the same plate 11 as the first embodiment, a polishing cloth 12, and a substrate. The holding head 14 and the abrasive supply pipe 16, the semiconductor substrate 13 is a polishing cloth 12 which is crimped on the fixed plate 11 while rotating, and the abrasive 15 is removed from the abrasive supply pipe 16 each time. It is supplied quantitatively on the polishing cloth 12. 'As a characteristic of the third embodiment, the substrate holding head 14 on the polishing cloth 12 is provided on the opposite side to the polishing cloth 12 in a state of being in contact with the polishing cloth 12 or provided with a slight gap as a rotatable polishing. The size of the round paper of the agent pressing method is applicable to the Chinese National Standard (CNS) A4 specification (210.X297 mm) _ -19-I-1 ^ ^ ^ Gutter (please read the precautions on the back page first) 4 Economy Printed by the Consumer Standards Cooperative of the Ministry of Standards of the People's Republic of China 4 ^ 5 9 1 / A7 ______B7___ V. Description of the invention (17) Rotating member 2 1 in shape. The diameter of the rotating member 21 is set to be larger than the diameter of the substrate holding head 14 and a part of the rotating member 21 protrudes outward from the peripheral edge portion of the polishing cloth 12. The rotating member 21 is rotated in the direction opposite to the platen 11 during polishing, and is rotated in the same direction as the platen when the cleaning liquid is discharged. Thereby, as shown in FIG. 9, the abrasive cloth 15 is supplied from the abrasive supply pipe 16 to the abrasive cloth 12 and is stopped by the centrifugal force following the rotation of the stationary plate 11 to the abrasive 15 on the outside of the stationary plate 11. After being connected to the outer peripheral surface of the rotating member 21, the outer peripheral surface of the rotating member 21 rotating in the direction opposite to the fixed plate 11 is pushed back toward the center portion side of the fixed plate 11 and is widely spread on the polishing cloth 12 The arrow on the polishing cloth 12 is supplied to the semiconductor substrate 1 3 β. In FIG. 9, the flow direction of the abrasive 15 during conceptual ground surface polishing. At this time, the abrasive 15 a is stored on the peripheral edge of the abrasive cloth 12 due to the surface tension of the abrasive 15. However, since a part of the rotating member 21 protrudes outward from the peripheral edge of the abrasive cloth 12, the abrasive After the 15 a series is connected to the rotating member 21, the rotation of the rotating member 21 is hidden and pushed back to the center of the fixed plate Γ1. On the other hand, when the cleaning liquid on the polishing cloth 12 is discharged, 'the cleaning liquid flows along the outer peripheral surface of the rotating member 2 1 rotating in the same direction as that of the fixed plate 11 to the outside of the fixed plate 11. To promote the drainage of the washing liquid. The planar shape of the rotating member 21 is not limited to a circular shape. However, as shown in FIG. 10, if a convex portion 2 1 a is provided on the outer peripheral surface of the rotating member 21, the abrasive 1 5 The outer peripheral surface of the rotating member 2 1 rotating in the direction opposite to the fixed plate 11 is pushed back to the center portion side of the fixed plate Γ 1. The effective paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please First read the notes on the back to write this page) -20-Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 4 5 4 乂 5 9 A7 y \ B7 V. Invention Description (18) 'The fruit was promoted. Also in the third embodiment, a dedicated rotating member 21 is provided as an abrasive pressing means, but instead of the dedicated rotating member 2 1, a rotating member having the same shape as the substrate holding head 1.4 may be provided. Embodiment 4) Figures 11 and 12 show the schematic structure of a polishing apparatus according to a fourth embodiment of the present invention. Figure 11 is a perspective view and Figure 12 is a plan view. In the fourth embodiment, the same plate 1 1, polishing cloth 12, substrate holding head 14 and abrasive supply pipe 16 as in the first embodiment are provided, and the semiconductor substrate 1 3 is crimped while rotating. The abrasive cloth 12 on the fixed plate 11 and the abrasive material 15 are supplied to the abrasive cloth 12 quantitatively from the abrasive supply pipe 16 at a time. As a feature of the fourth embodiment, the diameter of the polishing cloth 12 is smaller than that of the fixed plate 11, and the polishing cloth 12 is placed on the central portion of the fixed plate 11. In addition, on the peripheral edge portion 1 1 c of the fixed plate 11, along the outer peripheral surface of the polishing cloth 12, there are provided abrasives 15 made of, for example, polyvinyl chloride as abrasives held on the polishing cloth 12. Most of the plate-like abrasive holding members 1 9 »each honing agent holding member 1 9. has an upper portion that is higher than the surface of the polishing cloth 12 and is set to rotate during grinding. Direction The front side of the polishing cloth is located on the inner side in the radial direction of the polishing cloth 12 than the rear side. As a matter of fact, the polishing cloth 1.2 is fixed at an angle of about 30 degrees to the outer tangential direction. • In the second embodiment, the abrasive pressing member 1 8 series will not be ground with the paper size. The Chinese National Standard (CNS) A4 specification (210X297 mm) is applied. 1 ^ One binding. Thread (Please read the meeting notice first Matters ^ k this page) -21-4

>4^59 V> 4 ^ 59 V

經濟部中央標準局員工消費合作社印裝 五、發明説明（ 布1 2 —起旋轉作爲原則，由此，研磨劑1 5係被推回至 定盤1 1之中心部側’反觀’在第4實施形態，研磨劑保 持構件1 9係與研磨布1 2 —起旋轉作爲原則，由此，研 磨劑1 5係儲存在研磨布1 2之上。亦即，從研磨劑供應 管16供應於研磨布12上且藉隨著定盤之旋轉之離 心力向定盤1 1之外側的研磨劑1 5，係碰到研磨劑保持 構件1 9而被變更流動之方向，被儲存在研磨布1 2上， 因此，以普及於研磨布12上之狀態下，被供應於半導體 基板1 3之研磨。 研磨劑保持構件1 9之長度及角度，係可適當地選擇 可將研磨布1 2上之研磨劑1 5保持在研磨布1 2上。又 ，若相鄰接之保持構件1 9彼此間設成重疊在定盤1 1之 徑方向時，則成爲更確實地保持研磨劑1 5。 研磨劑保持構件l· 9係不設置於定盤1 1之周緣部 1 1 c上，而設於研磨布1 2之上也可以。 研磨劑保持構件1 9之材質係並不被限定於聚氯乙烯 ，使用與第2實施形態周樣，或其他之任何材質也可以。 第1 3 ( a )〜（d )圖係表示研磨劑保持構件19 之形狀，設置角度及數的變形例，如第1 3 ( a )〜（d )圖所示，研磨劑保持構件1 9之形狀，設置角度及數係 並不被限定，隨著研磨劑15之黏度或定盤11之旋轉速 度，可適當地變更。亦即，研磨劑保持構件1 9係折彎成 <形或凹形也可以。 以下，一面參照第1 4 ( a ) (b )圖及第1 ； 裝 I 訂 —II 線 (請先閱讀r面之注意事項^:,4.寫本頁) 本紙張尺度適用中國國家橾準（cns ) A4規格（2ΐοχ297公釐） -22 - 4 5 4^5 9 Α7 Β7 7/ 五、發明説明（2G) a) ，（： b)圖一面說明使用第4實施形態之研磨裝置所 實行的研磨方法。 首先，如第1 4 ( a )圖所示，將半導體基板1 3以 研磨面作爲下方裝設於基板保持頭14而壓接於研磨布 1 2上。 然後，如第1 4 ( b )圖所示，從研磨劑供應管1 6 將研磨劑1 5供應於研磨布1 2上的定盤1 1之中心部附 近，而且分別將定盤1 1及基板保持頭1 4向順時鐘方向 (C' W )旋轉。如此，因隨著定盤1 1之旋轉的離心力， 研磨劑1 5係向研磨布1 2之外側流動，因而供應於半導 體基板13與研磨布12之界面。 經濟部中央標準局員工消費合作社印製 如第1 4 ( c )圖所示，研磨布1 2上之硏磨劑1 5 係因隨著定盤1 1之旋轉的離心力而流向研磨布1 2之外 側，惟擋接於研磨劑保持構件Γ 9之內面，沿著研磨劑保 持構件1 9之內面從研磨劑保持構件1 9之旋轉方向前方 側（研磨布1 2之徑方向外側）流動向旋轉方向後方側（ 研磨布12之徑方向內側），然後，移動至下一研磨劑保 持構件1 9之旋轉方向前方側。研磨劑1 5係因重複如上 述之流動，因此被保持在研磨布1 2上，而再被使用於半 導體基板1 3之研磨。 完成對於半導體基板1 3之研磨時，爲了洗淨半導體 基板1 3之被研磨面或洗掉研磨布1 2上之研磨劑1 5 ， 在研磨布1 2上供應水等之洗淨液。然後，爲了排出殘留 在定盤1 1及研磨布1 2上之洗淨液等，將定盤1 1向反 本紙張尺度適用中國國家標準（CNS ) A4規格（·210Χ297公釐> -23 - 5 4 4^5 9 Τ Α7 _£7_ 五、發明説明（21) 時鐘方向（CCW)旋轉。如此，如第1 5 (b)圖所示 ，洗淨液2 0係施行與上述之硏磨劑1 5之相反方向之流 動，因此，比未設有研磨劑保持構件1 9時可有效率地實 行洗淨液2 0之排出。 又，定盤1 1之旋轉方向係在半導體基板1 3之研磨 時作爲C W，而在洗淨液2 0之排出時作爲C C W，惟在 將研磨劑保持構件1 9所設置之方向成爲內外相反時，則 定盤11之旋轉方向也成爲相反。 (第5之實施形態） 第1 6 ( a )圖係表示本發明之第5實施形態之研磨 裝置的概略斜視圖》 如第1 6 ( a )圖所示，在第5實施形態，也具備與 第1賓施形態同樣之定盤1 1，研磨布1 2，基板保持頭 1 4及研磨劑供應管1 6，半導體基板1 3係一面旋轉一 面壓接於定盤1 1上之研磨布12，而研磨劑15係從研 磨劑供應管1 6每次所定量地供應於研磨布1 2上。又， 在第16 (a)圖中，定盤11之研磨布保持部1 1 a係 省略圖示。 作爲第5實施形態之特徵，係在定盤1 1之研磨布保 持部1 1 a之外側，設有對於定盤1 1向上下方向移動而' 且藉與定盤1 1不相同之旋轉手段旋轉之環狀的上下移動 構件2 2 »在上下移動構件2 2上，沿著研磨布1 2之外 周面設有具備與第4實施形態同樣之形狀，將研磨劑15 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~" -24 - · .. I裝 訂 線 (請先閱讀背面之注意事項\^寫本頁) 經濟部中央標準局貝工消費合作社印製 5 4 5 9 ^ A7 ____B7_______ 五、發明説明（22) 作爲保持在研磨布1 2上之研磨劑保持手段的多數帶板狀 之研磨劑保持構件1 9 ，該研磨劑保持構件1 9係隨著上 下移動構件22之上下運動對於研磨布1 2向上下方向移 動。研磨劑保持構件1 9係在研磨時其上部被保持成比研 磨布1 2之表面更上方，一方面，在洗淨時其上部被保持 成比研磨布12之表面更下方。 又，作爲第5實施形態之特徵，基板保持頭14之臂 部1 4 a，係設成沿著研磨布1 2之表面施行旋轉運動。 對於研磨劑保持構件1 9之平面式配置，係與第4實 施形態同樣，從研磨劑供應管1 6供應於研磨布1 2上且 藉隨著定盤1 1之旋轉的離心力向定盤1 1之外側的研磨 劑1 5，係因碰到研磨劑保持構件1 9而變更流動之方向 ，被儲存在研磨布12上，故以普遍地擴張至研磨布12 上之狀態下被供應於半導體基板13之研磨。 以下，一面參照第1 6 ( a ) ( b )圖及第1 7 ( a )(b )圖一面說明使用第5實施形態之研磨裝置所實行 的研磨方法。 首先，與使用第2實施形態之研磨裝置所實行的研磨 方法同樣地，將半導體基板1 3以研磨面作爲下方而裝設 於基板保持頭被壓接於研磨布12上。 之後，如第1 6 ( a )圖所示，從研磨劑供應管1 6 將研磨劑1 5供應於研磨布1 2上的定盤1 1之中心部附 近，而且分別旋轉定盤1 1及基板保持頭14。如此，爲 了隨著定盤11之旋轉的遠心力，研磨劑15係间研磨布 本紙張尺度適用中國國家橾準（CNS > A4規格（21〇Χ297公釐） ~~ ~ I.. IMIH ^ 裝 . 訂 I 線 (請先閲讀背面之注意事項寫本頁) ί 經濟部中央標準局貝工消費合作社印氧 25 經濟部中央標準局負.工消費合作杜印製 454^5 9 V A7 B7 五、發明説明（23 ) 1 2之外側流動，供應於半導體基板1 3與研磨布1 2之 界面。此時，研磨布12上之研磨劑15，係爲了隨著定 盤1 1之旋轉的離心力而流向研磨布1 2之外側’惟碰到 研磨劑保持構件19被變更流動方向’被儲存在研磨布 1 2上，以擴散在研磨布1 2上之狀態下被供應於半導體 基板1 3之研磨。 當完成對於半導體基板1 3之研磨時’如第1 6 ( b )圖所示，對於定盤1 1向下方移動上下移動構件2 2。 之後，如第1 7 ( a ) ，（ b )圖所示，沿著研磨布 1 2之表面旋轉基板保持頭14之臂部1 4 a，俾從研磨 布1 2突出基板保持頭1 4之一部分或半導體基板1 3之 一部分。如此，因半導體基板1 3與研磨布1 2之間的密 接性會減低，因此可從研磨布1 2上容易地脫離半導體基 板1 3。 第1 8 ( a ) ，（ b )圖係表示將基板保持頭1 4沿 著研磨布1 2表面移動的其他構造，基板保持頭1 4係保 持在與研磨布12表面平行之方向水平移動的水平移動構 件2 3。 當完成對於半導體基板1 3之研磨時，如第1 6 ( b )圖所示，將上下移動構件2 2對於定盤11向下方移動 之後，如第1 8 ( a ) ，（ b )圖所示，將水平移動構件 2 3向水平方向移動而沿著研磨布1 2表面移動基板保持 頭1 4。藉此，因從研磨布1 2向外側突出基板保持頭 1 4之一部分或半導體基板13之一部分，因此，可從研 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） I.---_----1---1-- (請先閲讀背面之注意事項本頁) 訂 線 Α7 Β7 4 5 4)^ 5 9 v 五、發明説明（24 ) 磨布12上容易地脫離半導體基板13。 (第6之實施形態） 第1 9圖係表示本發明之第6實施形態之研磨裝置的 概略平面構造。 如第19圖所示，在第6實施形態，也具備與第1實 施形態同樣之定盤1 1，研磨布1 2，基板保持頭1 4及 研磨劑供應管16,半導體基板13係一面旋轉一面壓接 於定盤1 1上之研磨布1 2，而研磨劑1 5係從研磨劑供 應管1 6每次所定量地供應於研磨布1 2上。又，在第 1 9圖，省略圖示定盤1 1之研磨布保持部1 1 a。 作爲第6實施形態之特徵，在定盤1 1之研磨布保持 部11 a之外側，設有對於研磨布1 2之表面呈垂直之平 面內轉動，而且藉與定盤1 1不相同之旋轉手段施以旋轉 的環狀轉軌構件2 4。又，對於將轉動構件2 4施以轉動 之機構省略圖示。又，在轉動構件2 4上，沿著研磨布 1 2之外周面設有具備與第4實施形態同樣之形狀，將研 磨劑15作爲保持在研磨布12上之研磨劑保持手段的多 數帶板狀之研磨劑保持構件1 9，該研磨劑保持構件1 9 係隨著轉動構件2 4之轉動而對於研磨布1 2轉動。研磨 劑保持搆件1 9係在研磨時其上部被保持成比研磨布1 2 之表面更上方· 又，與第5實施形態同樣地*基板保持頭1 4之臂部 1 4 a，係設成沿著研磨布1 2之表面施行旋轉運動。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ " -Ζ ί - 1 — I —; ; 裝 訂 線 (誇先閲讀絷面之注意事項本頁) 經濟部中央標準局員工消費合作社印製 A7 B7 454^5 9 ty 五、發明説明（ 25) 對於研磨劑保持構件1 9之平面式配置，係與第4實 施形態同樣，從研磨劑供應管1 6供應於研磨布1 2上且 藉隨著定盤1 1之旋轉的離心力向定盤1 1之外側的研磨 劑15，係因碰到研磨劑保持構件19而變更流動之方向 ，被儲存在研磨布1 2上，故以普遍地擴張至研磨布1 2 上之狀態下被供應於半導體基板1 3之研磨· 以下，一面參照第1 9圖及第2 0圖一面說明使用第 6實施形態之研磨裝置所實行的研磨方法。 首先，將半導體基板1 3壓接於研磨布1 2上之狀態 下，如第1 9圖所示，從研磨劑供應管1 6將研磨劑1 5 供應於研磨布1 2上的定盤1 1之中心部附近，而且分別 旋轉定盤1 1及基板保持頭1 4、如此*爲了隨著定盤 1 1之旋轉的遠心力，研磨劑1 5係向研磨布1 2之外側 流動，供應於半導體基板1 3與研磨布1 2之界面。此時 ，研磨布1 2上之研磨劑1 5，係爲了隨著定盤1 1之旋 轉的離心力而流向研磨布1 2之外側，惟碰到研磨劑保持 構件1 9被變更流動方向，被儲存在研磨布1 2上，以擴 散在研磨布12上之狀態下被供應於半導體基板13之硏 磨。 當完成對於半導體基板13之研磨時，如第2 0圖所 示，將轉動構件2 4對於研磨布1 2之表面以垂直之平面' 內轉動之後，與第5實施形態同樣地，沿著研磨布1 2之 表面旋轉基板保持頭1 4之臂部1 4 a ’俾從研磨布1 2 突出基板保持頭14之一部分或半導體基板1 3之一部分 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）_ _ I.\~ n -； ^ 裝 . 訂 — 線 (請先閲讀背面之注意事項本頁) 經濟部中央標準局貝工消費合作社印製 A7 B7 4 5 4^5 9Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (cloth 1 2-Rotation is the principle. As a result, the abrasive 15 is pushed back to the center of the fixed plate 1 1. In the embodiment, as a rule, the abrasive holding member 19 is rotated together with the abrasive cloth 12, and thus the abrasive 15 is stored on the abrasive cloth 12. That is, the abrasive is supplied from the abrasive supply pipe 16 to the abrasive. The abrasive on the cloth 12 and the centrifugal force following the rotation of the platen toward the outside of the platen 1 1 15 are moved against the abrasive holding member 19 to change the flow direction, and are stored on the cloth 12 Therefore, in a state of being spread on the polishing cloth 12, the polishing is supplied to the semiconductor substrate 13. The length and angle of the abrasive holding member 19 are appropriately selected from the polishing agents that can be used on the polishing cloth 12 1 5 is held on the polishing cloth 12. If the holding members 19 adjacent to each other are overlapped with each other in the radial direction of the fixed plate 11, the abrasive 15 is held more reliably. Abrasive holding The component l · 9 is not provided on the peripheral edge portion 1 1 c of the fixed plate 11 and is provided on It may be on the abrasive cloth 12. The material of the abrasive holding member 19 is not limited to polyvinyl chloride, and it may be the same as that of the second embodiment or any other material. Section 1 3 (a) ~ (D) is a modified example of the shape, setting angle, and number of the abrasive holding member 19. As shown in Figures 13 (a) to (d), the shape, angle, and setting of the abrasive holding member 19 The number system is not limited, and it can be appropriately changed in accordance with the viscosity of the abrasive 15 or the rotation speed of the fixed plate 11. That is, the abrasive holding member 19 may be bent into a < shape or a concave shape. , Refer to Figure 14 (a) (b) and Figure 1 on the one hand; Binding I-II line (please read the precautions on the r side first ^ :, 4. Write this page) This paper standard is applicable to Chinese national standards ( cns) A4 specification (2ΐοχ297 mm) -22-4 5 4 ^ 5 9 Α7 Β7 7 / V. Description of the invention (2G) a), (: b) The figure on the side illustrates the implementation using the grinding device of the fourth embodiment Grinding method. First, as shown in Fig. 14 (a), the semiconductor substrate 13 is mounted on the substrate holding head 14 with the polishing surface as the lower side, and is crimped onto the polishing cloth 12. Then, as shown in FIG. 14 (b), the abrasive 15 is supplied from the abrasive supply pipe 16 to the vicinity of the center portion of the platen 1 on the polishing cloth 12, and the platen 11 and The substrate holding head 14 is rotated in a clockwise direction (C'W). In this way, the centrifugal force caused by the rotation of the platen 11 causes the abrasive 15 to flow outside the polishing cloth 12 and is thus supplied to the interface between the semiconductor substrate 13 and the polishing cloth 12. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs, as shown in Figure 14 (c), the honing agent 1 5 on the abrasive cloth 12 flows to the abrasive cloth 1 2 due to the centrifugal force following the rotation of the plate 11 On the outer side, the inner surface of the abrasive holding member Γ 9 is blocked, and along the inner surface of the abrasive holding member 19, from the front side of the abrasive holding member 19 in the rotation direction (outside of the radial direction of the polishing cloth 12). The flow moves to the rear side in the rotation direction (inside of the radial direction of the polishing cloth 12), and then moves to the front side in the rotation direction of the next abrasive holding member 19. Since the abrasive 15 is repeatedly flowed as described above, it is held on the abrasive cloth 12 and used for polishing the semiconductor substrate 13 again. When the polishing of the semiconductor substrate 13 is completed, in order to wash the polished surface of the semiconductor substrate 13 or to remove the abrasive 15 on the polishing cloth 12, a cleaning liquid such as water is supplied to the polishing cloth 12. Then, in order to discharge the cleaning liquid and the like remaining on the platen 11 and the abrasive cloth 12, the platen 11 is applied in accordance with the Chinese National Standard (CNS) A4 specification (· 210 × 297 mm > -23) to the paper size. -5 4 4 ^ 5 9 Τ Α7 _ £ 7_ V. Description of the invention (21) Clock direction rotation (CCW). Thus, as shown in Figure 1 5 (b), the cleaning solution 20 is implemented in the same way as above. Since the abrasive 15 flows in the opposite direction, the cleaning liquid 20 can be discharged more efficiently than when the abrasive holding member 19 is not provided. In addition, the rotation direction of the plate 11 is on the semiconductor substrate 1 3 is CW during polishing, and CCW when cleaning solution 20 is discharged. However, when the direction in which the abrasive holding member 19 is set is reversed from the inside to the outside, the rotation direction of the platen 11 is also reversed. Embodiment 5) FIG. 16 (a) is a schematic perspective view showing a polishing apparatus according to a fifth embodiment of the present invention. As shown in FIG. 16 (a), the fifth embodiment is also provided with the first embodiment. 1Binsch fixed plate 1 1, polishing cloth 12, substrate holding head 1 4 and abrasive supply tube 16, semiconductor substrate 1 3 series The abrasive cloth 12 is crimped to the fixed plate 11 while rotating, and the abrasive 15 is supplied from the abrasive supply pipe 16 to the abrasive cloth 12 at a certain amount. Also, as shown in FIG. 16 (a), The abrasive cloth holding portion 1 1 a of the fixed plate 11 is omitted. As a feature of the fifth embodiment, the abrasive cloth holding portion 1 1 a of the fixed plate 11 is provided on the outside of the abrasive cloth holding portion 1 1 a. A ring-shaped up-and-down moving member 2 2 that moves up and down and is rotated by a rotation means different from that of the fixed plate 1 1 »On the up-and-down moving member 2 2 is provided along the outer peripheral surface of the polishing cloth 12 The shape of the fourth embodiment is the same, and the abrasive paper size of 15 papers applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ " -24-· .. I binding line (Please read the precautions on the back first \ ^ Write this page) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5 4 5 9 ^ A7 ____B7_______ V. Description of the Invention (22) Most of the plate-like grinding methods used as the means for retaining the abrasives held on the abrasive cloth 12 The agent holding member 19 is mounted on the member 22 as the abrasive holding member 19 moves up and down. The movement of the polishing cloth 12 moves up and down. The abrasive holding member 19 is held above the surface of the polishing cloth 12 during polishing, on the one hand, its upper portion is maintained at a specific polishing rate during washing. The surface of the cloth 12 is further below. As a feature of the fifth embodiment, the arm portion 14 a of the substrate holding head 14 is provided to perform a rotational movement along the surface of the polishing cloth 12. The planar arrangement of the abrasive holding member 19 is the same as in the fourth embodiment. The abrasive holding member 19 is supplied from the abrasive supply pipe 16 to the polishing cloth 12 and is applied to the fixed plate 1 by the centrifugal force following the rotation of the fixed plate 11. The abrasives 1 and 5 on the outer side are stored on the abrasive cloth 12 because they change the flow direction when they touch the abrasive holding member 19, so they are supplied to the semiconductor in a state where they are generally spread on the abrasive cloth 12. Polishing of the substrate 13. Hereinafter, the polishing method performed using the polishing apparatus according to the fifth embodiment will be described with reference to Figs. 16 (a) (b) and 17 (a) (b). First, in the same manner as the polishing method performed using the polishing apparatus of the second embodiment, the semiconductor substrate 13 is mounted on the substrate holding head with the polishing surface as the lower side, and is pressed against the polishing cloth 12. Thereafter, as shown in FIG. 16 (a), the abrasive 15 is supplied from the abrasive supply pipe 16 to the vicinity of the center portion of the plate 11 on the polishing cloth 12, and the plate 11 and the plate are rotated respectively. Substrate holding head 14. In this way, in order to follow the telecentric force of the rotation of the fixed plate 11, the paper size of the abrasive 15 series abrasive paper is adapted to the Chinese National Standard (CNS > A4 specification (21〇 × 297 mm) ~~ ~ I .. IMIH ^ Install. Order I line (please read the notes on the back to write this page) ί The Central Standards Bureau of the Ministry of Economic Affairs prints oxygen to the cooperating society 25 The Central Standards Bureau of the Ministry of Economic Affairs is responsible for printing 454 ^ 5 9 V A7 B7 V. Description of the invention (23) 1 2 flows outside and is supplied to the interface between the semiconductor substrate 13 and the polishing cloth 12. At this time, the abrasive 15 on the polishing cloth 12 is for the rotation of the fixed plate 11 The centrifugal force flows to the outside of the polishing cloth 1 2 'but the abrasive holding member 19 is changed in the flow direction' is stored on the polishing cloth 12 and is supplied to the semiconductor substrate 1 3 while being spread on the polishing cloth 12 When the polishing of the semiconductor substrate 13 is completed, as shown in FIG. 16 (b), the up and down moving member 2 2 is moved downward for the fixed plate 11. Then, as shown in FIG. 17 (a), ( b) As shown in the figure, the arms 1 4 of the substrate holding head 14 are rotated along the surface of the polishing cloth 12 a, 突出 protrudes from a part of the substrate holding head 14 or a part of the semiconductor substrate 13 from the polishing cloth 12. In this way, since the adhesion between the semiconductor substrate 13 and the polishing cloth 12 is reduced, the polishing cloth 1 can be removed from the polishing cloth 1 2 is easily detached from the semiconductor substrate 1 3. The eighteenth (a) and (b) diagrams show other structures in which the substrate holding head 14 is moved along the surface of the polishing cloth 12 and the substrate holding head 1 4 is held in contact with The horizontally moving member 2 3 that moves horizontally in a direction parallel to the surface of the polishing cloth 12. When the semiconductor substrate 13 is polished, as shown in FIG. 16 (b), the vertical moving member 2 2 is lowered toward the fixed plate 11 After the movement, as shown in Figs. 18 (a) and (b), the horizontal moving member 23 is moved horizontally and the substrate holding head 14 is moved along the surface of the polishing cloth 12. As a result, since the 1 2 A part of the substrate holding head 1 4 or a part of the semiconductor substrate 13 is protruded to the outside. Therefore, the Chinese national standard (CNS) A4 specification (210 X297 mm) can be applied from the paper size. I .----- --1 --- 1-- (Please read the caution page on the back first) 7 Β7 4 5 4) ^ 5 9 v V. Description of the Invention (24) 12 on the grinding cloth of the semiconductor substrate 13 is easily disengaged. (Sixth Embodiment) Fig. 19 is a schematic plan view showing a polishing apparatus according to a sixth embodiment of the present invention. As shown in FIG. 19, in the sixth embodiment, the same plate 11, polishing cloth 12, substrate holding head 14 and abrasive supply pipe 16, and semiconductor substrate 13 as the first embodiment are also rotated in the same manner as in the first embodiment. One side is crimped to the polishing cloth 12 on the fixed plate 11 and the abrasive 15 is supplied from the abrasive supply pipe 16 to the polishing cloth 12 at a fixed amount each time. In Fig. 19, the polishing cloth holding portion 1a of the fixed plate 11 is not shown. As a feature of the sixth embodiment, an outer surface of the polishing cloth holding portion 11 a of the fixed plate 11 is provided to rotate in a plane perpendicular to the surface of the polishing cloth 12, and the rotation is different from that of the fixed plate 11. Means cast a rotating ring-shaped turning member 2 4. The mechanism for rotating the rotating member 24 is not shown. In addition, the rotating member 24 is provided with a plurality of strips along the outer peripheral surface of the polishing cloth 12 and having the same shape as that of the fourth embodiment, and the abrasive 15 is a means for retaining the abrasive held on the polishing cloth 12. The abrasive-retaining member 19 is shaped like this, and the abrasive-retaining member 19 is rotated with respect to the polishing cloth 12 as the rotating member 24 is rotated. The abrasive holding member 19 is held above the surface of the polishing cloth 12 during polishing. Also, as in the fifth embodiment, the arm holding member 14 of the substrate holding head 14 is provided. A rotary motion is performed along the surface of the abrasive cloth 12. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ " -Z ί-1 — I —;; Gutter (read the precautions on this page first) Staff of the Central Bureau of Standards, Ministry of Economic Affairs Printed by the consumer cooperative A7 B7 454 ^ 5 9 ty V. Description of the invention (25) The planar arrangement of the abrasive holding member 19 is the same as in the fourth embodiment, and is supplied from the abrasive supply pipe 16 to the polishing cloth 1 The abrasive 15 on the outside of the fixed plate 11 is moved to the outside of the fixed plate 11 by the centrifugal force following the rotation of the fixed plate 11 and stored on the abrasive cloth 12 due to the change in the direction of flow due to the abrasive holding member 19. Therefore, the polishing that is supplied to the semiconductor substrate 13 in a state where it is generally extended to the polishing cloth 12 is explained below. The operation performed using the polishing apparatus of the sixth embodiment will be described with reference to FIGS. 19 and 20. Grinding method. First, in a state where the semiconductor substrate 13 is pressure-bonded to the polishing cloth 12, as shown in FIG. 19, the abrasive 1 5 is supplied from the abrasive supply pipe 16 to the fixing plate 1 on the polishing cloth 12. Near the center of 1, and rotate the fixed plate 1 1 and the substrate holding head 1 respectively 4. In this way, in order to follow the telecentric force of the rotating of the fixed plate 11, the abrasive 1 5 flows to the outside of the polishing cloth 12 and supplies At the interface between the semiconductor substrate 13 and the polishing cloth 12. At this time, the abrasive 15 on the abrasive cloth 12 flows to the outside of the abrasive cloth 12 in accordance with the centrifugal force of the rotation of the fixed plate 11, but the abrasive holding member 19 is changed in the flow direction and is moved by the centrifugal force. It is stored on the polishing cloth 12 and is supplied to the honing of the semiconductor substrate 13 in a state of being spread on the polishing cloth 12. When the polishing of the semiconductor substrate 13 is completed, as shown in FIG. 20, the rotating member 24 is rotated in a plane perpendicular to the surface of the polishing cloth 12, and then the polishing is performed in the same manner as in the fifth embodiment. The surface of the cloth 1 2 rotates the substrate holding head 1 4 The arm portion 1 4 a '俾 protrudes from the abrasive cloth 1 2 part of the substrate holding head 14 or part of the semiconductor substrate 1 3 This paper size applies to Chinese National Standard (CNS) A4 specifications (210X297mm) _ _ I. \ ~ n-; ^ Binding. Order-thread (please read the note on the back page first) Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 4 5 4 ^ 5 9

V 五、發明説明（26) 。如此，因半導體基板1 3與研磨布1 2之間的密接性會 減低，因此可從研磨布1 2上容易地脫離半導體基板1 3 〇 又，與第5實施形態同樣地，如第1 8 ( a )，（ b )圖所示，將基板保持頭1 4保持在水平移動向與研磨布 1 2之表面平行之方向的水平移動構件2 3，而從研磨布 12突出基板保持頭14之一部分或是半導體基板13之 —部分也可以。 第2 1圖係表示使用本發明之各實施形態的研磨裝置 施以研磨時，及使用以往之研磨裝置施以研磨時的研磨劑 之供應量與研磨比率之關係，以往係爲了維持充分之研磨 比率之研磨劑之供應量僅需L 〇，惟因使用本發明，以比 L 〇更少之L 1之供應量即可確保與以往同樣之研磨比率 ' ·. ： 〇 〔發明之效果〕 依照申請專利範圍第1項之發明的半導體基板之研磨 裝置時，因依隨著定盤之旋轉的離心力將向定盤之外側流 動之研磨劑藉由研磨劑推壓手段推壓向定盤之中心側，可 再利用於基板之研磨，故可減低研磨劑之消耗量。 依照申請專利範圍第2項之發明的半導體基板之研磨' . . 裝置，因依保持在研磨布上之推壓板，可將依隨著定盤之 旋轉之離心力擋接的研磨劑推壓向定盤之中心側，故以研 磨布上設置推壓板之簡化又低成本之方法，可減低研磨劑 本紙張尺度適用中國國家標準_( CNS > A4規格（210X297公釐）on -iv I,--:---111¾----------#------^ (請先閲讀背面之注意事項寫本頁) ,f' 經濟部中央標準局貝工消費合作社印製 經濟部中央榡準局員工消費合作社印製 454式59 A7 Ί/ B7 五、發明説明（27) 之消耗量。 依照申請專利範圍第3項之發明的半導體基板之研磨 裝置時，因隨著定盤之旋轉一面旋轉一面向外側流動的研 磨劑，係與推壓板一起對於研磨布一面相對旋轉一面向定 盤之中心側流動，而可將研磨劑順利地向定盤之中心側流 動，故可有效率地再利用研磨劑。 依照申請專利範圍第4項之發明的半導體基板之研磨 裝置時，因將拼磨時之定盤旋轉方向的前方側比後方側位 於定盤徑方向之內側的推壓板向與研磨時之定盤旋轉方向 相反方向旋轉，則研磨布上之洗淨液係藉由推壓板之背面 向定盤之外側推壓，故可將洗淨液在短時間內從研磨布上 排出》 依照申請專利範圍第5項之發明的半導體基板之研磨 裝置時，因推壓板係與研磨劑擋接而可將研磨劑向定盤中 心側推壓，而且與研磨布未接觸，故可避免隨著推壓板與 研磨布之摩擦所產生之滓的情事。 依照申請專利範圍第6項之發明的半導體基板之研磨 裝置時，因推壓板之下部係沿著研磨布之上面而變形，而 . ； · . 在推壓板之下面與研磨布之上面之間不會產生間隙，研磨 劑係有效率地向中心侧推壓，故可更有效率地再利用研磨 劑。 依照申請專利範圍第7項之發明的半導體基板之研磨 裝置時，因藉研磨劑捕集部確實地捕集向外側流出的研磨 劑’而藉由研磨劑推壓部可將研磨劑捕集部所捕集之研磨 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） —r---^------丨裝·—-1----訂-------線 (請先閱讀背面之注意事項vV寫本頁) ，1' -30 - A7 B7 454^59V. Description of the invention (26). In this way, since the adhesiveness between the semiconductor substrate 13 and the polishing cloth 12 is reduced, the semiconductor substrate 1 3 can be easily separated from the polishing cloth 12 and the same as the fifth embodiment, as in the eighth embodiment. (a), (b) As shown in the figure, the substrate holding head 14 is horizontally moved to a horizontal moving member 23 in a direction parallel to the surface of the polishing cloth 12, and the substrate holding head 14 is protruded from the polishing cloth 12. A part or part of the semiconductor substrate 13 may be used. Figure 21 shows the relationship between the amount of abrasive supplied and the polishing ratio when polishing is performed using the polishing device of each embodiment of the present invention, and when the conventional polishing device is used for polishing, in order to maintain sufficient polishing. The supply rate of abrasives with a ratio of only L0 is required, but the use of the present invention can ensure the same grinding ratio as in the past with a supply of L1 less than L0 '..: 〇 [Effect of the invention] According to When applying the invention for the polishing device of the semiconductor substrate according to the first item of the patent scope, the abrasive flowing to the outside of the fixed plate is pushed toward the center of the fixed plate by the abrasive pressing means because of the centrifugal force following the rotation of the fixed plate On the other hand, it can be reused for polishing the substrate, so the consumption of abrasive can be reduced. The polishing of semiconductor substrates according to the invention in accordance with the scope of patent application No. 2... The device, because of the pressing plate held on the polishing cloth, can press the abrasive that is blocked by the centrifugal force following the rotation of the fixed plate to the fixed direction. The center side of the plate, so the simplified and low-cost method of setting a pressing plate on the abrasive cloth can reduce the abrasive. The paper size applies the Chinese national standard _ (CNS > A4 size (210X297 mm) on -iv I,- -: --- 111¾ ---------- # ------ ^ (Please read the notes on the back to write this page first), f 'Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The 454 Type 59 A7 Ί / B7 printed by the Consumer Cooperative of the Central Government Prospective Bureau of the Ministry of Economic Affairs 5. Consumption of the invention description (27). When the semiconductor substrate polishing device of the invention in accordance with the scope of the patent application is No. 3, The abrasive that flows while the disc rotates and rotates outwards, together with the pressing plate, rotates with respect to the abrasive cloth side and flows toward the center side of the fixed plate, so that the abrasive can smoothly flow to the center side of the fixed plate, so it can Efficient reuse of abrasives. In the polishing device for a semiconductor substrate according to the fourth aspect of the present invention, the pressing plate, which is located inward of the diameter direction of the fixed plate during the grinding process, is rotated in a direction opposite to the direction of the fixed plate rotation during the grinding process. , The cleaning liquid on the abrasive cloth is pushed to the outside of the fixed plate by the back of the pressing plate, so the cleaning liquid can be discharged from the abrasive cloth in a short period of time. In the polishing device of semiconductor substrate, because the pressing plate is in contact with the abrasive, the abrasive can be pressed toward the center of the fixed plate, and it is not in contact with the polishing cloth, so it can be avoided due to the friction between the pressing plate and the polishing cloth. In the case of a polishing device for a semiconductor substrate according to the invention claimed in item 6 of the scope of patent application, the lower part of the pressing plate is deformed along the upper surface of the polishing cloth, and; There is no gap between the upper and lower surfaces, and the abrasive is efficiently pushed toward the center side, so the abrasive can be reused more efficiently. When the grinding device is used, the abrasive captured by the abrasive capturing section reliably captures the abrasive flowing out to the outside, and the abrasive pressed by the abrasive pressing section can be used to grind the abrasive captured by the abrasive capturing section. CNS) A4 specification (210X297 mm) —r --- ^ ------ 丨 installed · —-1 ---- subscribed ------- line (please read the precautions on the back first to write vV (This page), 1 '-30-A7 B7 454 ^ 59

'V 五、發明説明（ 28) 劑向定盤之中心側推壓，可更減低從研磨布上流出的研磨 劑之量，故可更有效率地再利用研磨劑。 依照申請專利範圍第8項之發明的半導體基板之研磨 裝置時，可更減低從研磨布上所流出的研磨劑之量，更有 效率地再利用研磨劑，而且研磨布上之洗淨劑係從推壓板 彼此間的間隙被排出。 依照申請專利範圍第9項之發明的半導體基板之研磨 裝置時，藉調整從氣體噴出手段所噴出之氣體的流量或壓 力，可隨著研磨劑之量或黏度等之流動特性將研磨劑適當 地向定盤之中心側推壓，而且藉停止氣體之噴射，毫無妨 礙地可排出研磨布上之洗淨液。 依照申請專利範圍第1〇項之發明的半導體基板之研 磨裝置時，可更減低從研磨布上所流出的研磨劑之量，可 更有效率地再利用研磨劑。」 依照申請專利範圍第1 1項之發明的半導體基板之研 磨裝置時，隨著定盤之旋轉一面向外側流動的研磨劑，係 在與研磨布接觸之狀態或隔著些微之間隙的狀態下擋接於 與定盤相反方向旋轉的旋轉構件之外周面時，因沿著該外 周面向定盤之中心側流動，因可將研磨劑順利地向定盤之 中心側流動，故可有效率地再利用研磨劑。. 依照申請專利範圍第1 2項之發明的半導體基板之研 磨裝置時，因隨著定盤之旋轉向外側流動的研磨劑係藉設 於旋轉構件之外周面的凸部向定盤之中心側流動，可更減 低從研磨布上所流出的研磨劑之量，故可更有效率地再利 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公釐） ),.---^------批衣I-. (請先閲讀背面之注意事項ϋ本頁) 訂'V V. Description of the invention (28) Pressing the agent toward the center side of the platen can further reduce the amount of the abrasive flowing out of the abrasive cloth, so the abrasive can be reused more efficiently. When the semiconductor substrate polishing device according to the eighth aspect of the patent application is applied, the amount of the abrasive flowing from the polishing cloth can be further reduced, the abrasive can be reused more efficiently, and the cleaning agent on the polishing cloth is It is discharged from the gap between the pressing plates. When the semiconductor substrate polishing device according to the invention of claim 9 is applied, by adjusting the flow rate or pressure of the gas ejected from the gas ejection means, the abrasive can be appropriately adjusted with the flow characteristics of the amount or viscosity of the abrasive. It can be pushed toward the center side of the fixed plate, and by stopping the gas injection, the cleaning liquid on the abrasive cloth can be discharged without hindrance. When the semiconductor substrate grinding device according to the invention of claim 10 is applied, the amount of the abrasive flowing from the polishing cloth can be further reduced, and the abrasive can be reused more efficiently. '' When applying the polishing device for a semiconductor substrate according to the 11th scope of the patent application, the abrasive that flows outward with the rotation of the platen is in a state of contact with the polishing cloth or a state with a slight gap. When the outer peripheral surface of the rotating member rotating in the direction opposite to the fixed plate is blocked, the center side of the fixed plate flows along the outer peripheral surface. Since the abrasive can smoothly flow to the center side of the fixed plate, it can be efficiently moved. Reuse abrasives. When the semiconductor substrate polishing device according to the invention in claim 12 is applied, the abrasive that flows outward with the rotation of the fixed plate is raised toward the center of the fixed plate by the convex portion provided on the outer peripheral surface of the rotating member. The flow can reduce the amount of abrasive flowing out of the abrasive cloth, so it can more efficiently re-use the paper size (using the Chinese National Standard (CNS) A4 specification (210X297 mm)). --- ^ ------ Batch clothing I-. (Please read the precautions on the back ϋ this page) Order

經濟部中央標準局員工消費合作社印$L ~ 31 - 4 5 4(5 9 五、發明説明（ 29) 用研磨劑。 依照申請專利範圍第13項之發明的半導體基板之研 磨裝置時，因依隨著定盤之旋轉的離心力向定盤之外側流 動的研磨劑藉由研磨劑保持手段保持在研磨布上，可再利 用於基板之研磨，因此，藉由簡單又低成本之方法，可減 低研磨劑之消耗量。 依照申請專利範圍第1 4項之發明的半導體基板之研 磨裝置時，可更減低從研磨布上所流出的研磨劑之量，可 更有效率地再利用研磨劑，而且研磨布上之洗淨劑係從研 磨劑保持構件彼此間之間的間隙被排出。 依照申請專利範圍第1 5項之發明的半導體基板之研 磨裝置時，可更減低從研磨布上所流出的研磨劑之量，可 更有效率地再利用研磨劑。 經濟部中央標準局貝工消費合作社印製 (請先聞讀背面之注意事項#':ί寫本頁) 依照申請專利範圍第1 6項之發明的半導體基板之研 磨裝置時，將研磨劑保持構件對於研磨布向上方，下方或 外方移動之後，將基板保持構件在與研磨布平行之平面內 移動而從半導體基板之至少一部分從研磨布突出時，因減 低半導體基板與研磨布之間的密接力，因此從研磨布上可 容易地脫離半導體基板。 依照申請專利範圍第1 7項之發明的半導體基板之研 磨方法時，因依隨著定盤之旋轉的離心力向定盤之外側流 動的研磨劑，係向定盤之中心側推壓，可再利用於基板之 研磨，因此可減低研磨劑之消耗量。 依照申請專利範圍第1 8項之發明的半導體基板之研 本紙張尺度適用中國國家梯準（CNS > A4規格（210X297公釐） 32 v A7 B7 五、發明説明（30) (請先閲讀背面之注意事項产本頁) 磨方法時，因依隨著定盤之旋轉的離心力向定盤之外側流 動的研磨劑，係向定盤之中心側推壓，可再利用於半導體 基板之研磨，因此可減低研磨劑之消耗量。 依照申請專利範圍第1 9項之發明的半導體基板之研 磨方法時，因隨著定盤之旋轉一面旋轉一面向外側流動的 研磨劑，係藉推壓板一面旋轉一面向定盤之.中心側流動， 可將研磨劑順利地向定盤之中心側引導，因此可有效率地 再利用研磨劑。 依照申請專利範圍第20項之發明的半導體基板之研 磨方法時，因推壓板係可將擋接之研磨劑向定盤之中心側 推壓，而且推壓板與研磨布未接觸，因此，可避免隨著推 壓板與研磨布之摩擦所產生之滓的情事》 依照申請專利範圍第2 1項之發明的半導體基板之研 蘑方法時，因推壓板之下部沿著研磨布之上面而變形，而 在推壓板下面與研磨布上面之間未形成間隙，研磨劑係有 效率地向定盤之中心側推壓，因此可更有效率地再利甩研 磨劑。 經濟部中央標準局員工消費合作社印裝 依照申請專利範圍第2 2項之發明的半導體基板之研 磨方法時，因將定盤向與研磨時之定盤旋轉方向相反方向 旋轉，則推壓板係向與定盤相對地相反方向旋轉，而研磨 布上之洗淨液係藉由推壓板之背面向定盤之外側推壓，因 此，在短時間內從研磨布上可排出洗淨液。 依照申請專利範圍苐2 3項之發明的半導體基板之研 磨方法時，因調整向定盤之中心側噴出之氣體的流量或壓 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公釐> ~~ -33 -, 5 經濟部中央標準局負工消費合作社印製 4 溪5 9 ly A7 B7 _ 五、發明説明（） 力，隨著研磨劑之量或黏度等之流動特性而可將研磨劑向 定盤之中心側適當地推壓，而且因停止氣體之噴射，因此 ，無妨礙地可排出研磨布上之洗淨液。 依照申請專利範圍第2 4項之發明的半導體基板之研 磨方法時，因隨著定盤之旋轉一面旋轉一面向外側流動的 研磨劑，係在興研磨布接觸之狀態或隔著些微之間隙之狀 態下擋接於與定盤相反方向旋轉的旋轉構件之外周面，沿 著該外周面向定盤之中心側流動，而可將研磨劑順利地向 定盤之中心側流動，因此可有效率地再利用研磨劑。 依照申請專利範圍第25項之發明的半導體基板之研 磨方法時，因隨著定盤之旋轉一面旋轉一面向外側流動的 研磨劑，係藉研磨劑保持構件保持在研磨布上，而可有效 率地再利用研磨劑，因此，藉由簡單又低成本之方法，可 減低研磨劑之消耗量。 依照申請專利範圍第2 6項之發明的半導體基板之研 磨方法時，可更減低從研磨布上所流出的研磨劑之量，可 更有效率地再利用研磨劑，而且研磨布上之洗淨劑係可從 研磨劑保持構件彼此間之間的間隙被排出。 依照申請專利範圍第2 7項之發明的半導體基板之研 磨方法時，可更減低從研磨布上所流出的研磨劑之量，可 更有效率地再利甩研磨劑。 依照申請專利範圍第2 8項之發明的半導體基板之研 磨方法時，因將定盤向與研磨時之定盤旋轉方向相反方向 旋轉，則研磨劑保持構件係向與定盤相對地相反方向旋轉 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~~ -34 - I---'Ί.------裝------訂I-II----線 (請先聞讀背面之注意事吸广填寫本頁) ί 5 4 4.9 A7 厶 _._B7_'__ 五、發明説明（32) ，而研磨布上之洗淨液係藉由研磨劑保持構件之背面向定 盤之外側推.壓，因此，在短時間內從研磨布上可排出洗淨 液。 依照申請專利範圍第2 9項之發明的半導體基板之研 磨方法時，將研磨劑保持構件對於研磨布向上方，下方或 外方移動之後，從研磨布突出半導體基板之至少一部分， 而減低半導體基板與研磨布之間的密接力，因此從研磨布 上可容易地脫離半導體基板。 〔圖式之簡單說明〕 第1圖係表示本發明之第1實施形態之半導體基板之 .研磨裝置的斜視圖。_ 第2圖係表示本發明之第2實施形態之半導體基板之 研磨裝置的斜視圖》 第3圖係表示上述第2實施形態之半導體基板之研磨 裝置的平面圖。 第4圖係表示上述第2實施形態半導體基板之研磨裝 置的推壓板之變形例的平面圖。 第5 ( a )〜（d )圖係表示上述第2實施形態之半 導體基板之研磨裝置的推壓板之各變形例的平面圖。 ' .· 第6 ( a )〜（d )圖係表示上述第2實施形態之半' 導體基板之研磨裝置的推壓板之各變形例的剖面圖。 第7 ( a )〜（c )圖係表示說明使用上述第2實施 形態之半導體基板之研磨裝置之研磨方法的斜視圖。 本紙張尺度適用中國國家梯準（CNS ) A4说格（210X297公釐） ~ ~ -35 - ； .~~. n 裝 ϋ n I I n 11 n I ^ (請先閱讀背面之注意事項本頁) Λ,. 經濟部中央標準局員工消費合作社印製 A7 B7 454^59 yThe consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs prints $ L ~ 31-4 5 4 (5 9 V. Description of the invention (29) using abrasives. When a semiconductor substrate polishing device for an invention according to item 13 of the patent application scope, As the centrifugal force that rotates with the platen rotates, the abrasive flowing outside the platen is held on the abrasive cloth by the abrasive holding means and can be reused for polishing the substrate. Therefore, it can be reduced by a simple and low-cost method. Consumption of abrasives. When the semiconductor substrate polishing device according to the invention of claim 14 is applied, the amount of abrasives flowing from the polishing cloth can be reduced, and the abrasives can be reused more efficiently. The cleaning agent on the polishing cloth is discharged from the gap between the abrasive holding members. When the semiconductor substrate polishing device according to the invention of claim 15 is applied, the outflow from the polishing cloth can be further reduced. The amount of abrasive can be reused more efficiently. Printed by the Sheller Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the notice on the back first # ': ί write this page) According to the application In the semiconductor substrate polishing device of the invention described in the 16th aspect of the patent, the abrasive holding member is moved upward, downward or outward with respect to the polishing cloth, and then the substrate holding member is moved in a plane parallel to the polishing cloth from the semiconductor. When at least a part of the substrate protrudes from the polishing cloth, since the adhesion between the semiconductor substrate and the polishing cloth is reduced, the semiconductor substrate can be easily detached from the polishing cloth. Polishing the semiconductor substrate according to the invention claimed in item 17 of the scope of patent application In the method, the abrasive flowing to the outside of the fixed plate according to the centrifugal force following the rotation of the fixed plate is pushed toward the center side of the fixed plate and can be reused for polishing the substrate, so the consumption of the abrasive can be reduced. According to the invention of the semiconductor substrate in accordance with the 18th scope of the patent application, the paper size is applicable to the Chinese national standard (CNS > A4 size (210X297 mm) 32 v A7 B7 V. Description of the invention (30) (please read the back first) (Note on this page) In the grinding method, the abrasive that flows outside the platen due to the centrifugal force following the rotation of the platen is moved into the platen It can be reused for polishing semiconductor substrates by pressing on the heart side, so it can reduce the consumption of abrasives. According to the method for polishing semiconductor substrates in accordance with the invention in item 19 of the patent application, it rotates along with the rotation of the fixed plate. The abrasive that flows outwards is rotated by the push plate and that faces the fixed plate. The central side flows, and the abrasive can be smoothly guided to the center of the fixed plate, so the abrasive can be reused efficiently. According to the application In the method for polishing a semiconductor substrate according to the invention in the 20th aspect of the patent, the pressing plate can push the blocking abrasive to the center side of the fixed plate, and the pressing plate is not in contact with the polishing cloth. When the friction between the pressing plate and the abrasive cloth is caused by the rubbing method of the semiconductor substrate according to the 21st invention, the lower part of the pressing plate is deformed along the upper surface of the abrasive cloth. No gap is formed between the lower surface of the platen and the upper surface of the polishing cloth, and the abrasive is efficiently pushed toward the center side of the platen, so the abrasive can be more efficiently shaken. When the consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs prints a method for polishing a semiconductor substrate in accordance with the 22nd invention of the patent application, since the fixed plate is rotated in a direction opposite to that of the fixed plate during grinding, the pressing plate is oriented It rotates in the opposite direction to the fixed plate, and the cleaning liquid on the polishing cloth is pushed to the outside of the fixed plate by the back of the pressing plate. Therefore, the cleaning liquid can be discharged from the polishing cloth in a short time. According to the method for polishing semiconductor substrates in accordance with the scope of patent application 苐 23, because the flow rate of the gas ejected toward the center side of the fixed plate or the paper size is adjusted, the Chinese National Standard (CNS) A4 specification (210X297 mm) is used. > ~~ -33-, 5 Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 4 Stream 5 9 ly A7 B7 _ V. Description of the invention () The force can be changed with the flow characteristics of the amount of abrasive or viscosity, etc. The abrasive is appropriately pressed toward the center side of the platen, and the gas spray is stopped, so the cleaning liquid on the abrasive cloth can be discharged without hindrance. According to the invention of the semiconductor substrate according to the 24th aspect of the patent application, In the grinding method, the abrasive that flows on one side and rotates outward with the rotation of the platen is blocked by a rotating member that rotates in the opposite direction to the platen when the polishing cloth is in contact or with a slight gap. The outer peripheral surface flows along the center side of the fixed plate along the outer peripheral surface, and the abrasive can smoothly flow to the center side of the fixed plate, so the abrasive can be reused efficiently. According to the scope of patent application In the method for polishing a semiconductor substrate according to the invention of claim 25, since the abrasive that flows outward while rotating along with the rotation of the fixed plate is held on the polishing cloth by the abrasive holding member, the abrasive can be reused efficiently. Therefore, the consumption of the abrasive can be reduced by a simple and low-cost method. According to the method for polishing a semiconductor substrate in accordance with the 26th aspect of the application for a patent, the abrasive flowing out from the abrasive cloth can be further reduced In this way, the abrasive can be reused more efficiently, and the cleaning agent on the abrasive cloth can be discharged from the gap between the abrasive holding members. The semiconductor substrate according to the invention of claim 27 In the polishing method, the amount of the abrasive flowing out from the polishing cloth can be further reduced, and the abrasive can be removed more efficiently. According to the method for polishing a semiconductor substrate according to the 28th invention patent application, Rotate the platen in the direction opposite to the rotation direction of the platen during grinding. The abrasive holding member rotates in the opposite direction to the platen. National Standard (CNS) A4 specification (210X297 mm) ~~ -34-I --- 'Ί .------ installation ----- order I-II ---- line (please listen first Read the notes on the back and fill in this page) ί 5 4 4.9 A7 厶 _._ B7 _'__ V. Description of the invention (32), and the cleaning solution on the abrasive cloth is held by the back of the abrasive holding member to the fixing plate The outer side is pushed and pressed, so that the cleaning liquid can be discharged from the polishing cloth in a short time. When the semiconductor substrate polishing method according to the invention claimed in item 29 of the invention is applied, the abrasive holding member faces the polishing cloth upward. After the bottom or the outside is moved, at least a part of the semiconductor substrate protrudes from the polishing cloth, and the adhesion between the semiconductor substrate and the polishing cloth is reduced. Therefore, the semiconductor substrate can be easily separated from the polishing cloth. [Brief Description of the Drawings] Fig. 1 is a perspective view showing a polishing apparatus for a semiconductor substrate according to a first embodiment of the present invention. _ Figure 2 is a perspective view showing a polishing apparatus for a semiconductor substrate according to a second embodiment of the present invention. Figure 3 is a plan view showing a polishing apparatus for a semiconductor substrate according to the second embodiment. Fig. 4 is a plan view showing a modification of the pressing plate of the polishing device for a semiconductor substrate according to the second embodiment. Figures 5 (a) to (d) are plan views showing modifications of the pressing plate of the polishing device for a semiconductor substrate of the second embodiment described above. '.. (6) (a) to (d) are cross-sectional views showing various modification examples of the pressing plate of the polishing device for a conductive substrate according to the half of the second embodiment described above. Figures 7 (a) to (c) are perspective views illustrating a polishing method using a polishing apparatus for a semiconductor substrate according to the second embodiment. This paper size is applicable to the Chinese National Standard (CNS) A4 scale (210X297 mm) ~ ~ -35-;. ~~. N Decoration n II n 11 n I ^ (Please read the precautions on the back page first) Λ ,. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 454 ^ 59 y

QQ 五、發明説明（） 第8圖係表示本發明之第3實施形態之半導體基板之 研磨裝置的斜視圖。 第9圖係表示使用上述第3實施形態之半導體基板之 研磨裝置所實行之研磨狀態的平面圖。 第1 0圖係表示上述第3實施形態之半導體基板之研 磨裝置之旋轉構件之變形例的平面圖》 第1 1圖係表示本發明之第4實施形態之半導體基板 之研磨裝置的斜視圖。 第1 2圖係表示上述第4實施形態之半導體基板之研 磨裝置的.平面圖。 第1 3 ( a )〜（d )圖係表示上述第4實施形態之 半導體基板之研磨裝置的推壓板之各變形例的平面圖。 第1 4 ( a )〜（b )圖係表示說明使用上述第4實 施形態之半導體基板之研磨裝置之研磨方法的斜視圖。 V . 第1 5 ( a )〜（上）圖係表示說明使用上述第4實 施形態之半導體基板之研磨裝置之研磨方法的斜視圖。 第1 6 ( a )涵係表示本發明之第5實施形態之半導 體基板之研磨裝置的斜視圖。 第1 6 ( b )圖係表示使用上述第5實施形態之半導 體基板之研磨裝置所實行之研磨方法的斜視圖》 第1 7 ( a )〜（b )圖係表示使用上述第5實施形 態之半導體基板之硏磨裝置所實行之研磨方法的平面圖。 第1 8 ( a )〜（b)圖係表示使用上述第5實施形 態的半導體基板之研磨裝置之變形例所實行之研磨方法的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） — 1---II丨裝--11- —丨訂--.— — I丨線 (請先閲讀背面之注意事項C寫本頁) 經濟部t央標準局員工消费合作社印製 -36 - 5 4 A7 B7 4^5 9 > 五、發明説明（34) 平面圖。 第19圖係表示本發明之第6實施形態之半導體基板 之研磨裝置的斜視圖。 第2 0圖係表示使用上述第6實施形態之半導體基板 之研磨裝置所使用之研磨方法的斜視圖。 第2 1圖係表示使用本發明及以往之半導體基板之研 磨裝置所使用的研磨劑之供應量與研磨比率之關係的圖式 〇 第2 2圖係表示以往之半導體基板之研磨裝置的概略 斜視圖。 - 〔記號之說明〕 1 1 :定盤， 1 1 a :研磨布保持部’ 1 1 b : 旋轉軸， 1 2 :研磨布， 1 3 :基板， 1 4 :臂部 ， 1 5 :研磨劑， 1 6 :研磨劑供應管’ 1 7 :壓 縮空氣供應管， 1 7 a :噴出口， 1 8 :研磨劑推壓 構件， 1 9 :研磨劑保持構件， 2 0 :洗淨液， 2 1 :旋轉構件， 2 1 a :突出部， 2 2 :上下移動 構件， 2 3 : 平移動構件， 2 4 :旋轉構件》 本紙張尺度適用中國國家系準(CNS > A4胁（210X297公釐） I； 裝 ~； 訂 11 n 1· ^ (請先閲讀背面之注意事項C寫本頁) 經濟部中央標準局貝工消費合作社印装QQ 5. Description of the invention () Figure 8 is a perspective view showing a polishing apparatus for a semiconductor substrate according to a third embodiment of the present invention. Fig. 9 is a plan view showing a polishing state performed by the polishing apparatus using the semiconductor substrate of the third embodiment. Fig. 10 is a plan view showing a modified example of a rotating member of a grinding device for a semiconductor substrate of the third embodiment; Fig. 11 is a perspective view showing a grinding device for a semiconductor substrate of the fourth embodiment of the present invention. Fig. 12 is a plan view showing a semiconductor substrate grinding apparatus according to the fourth embodiment. Figs. 13 (a) to (d) are plan views showing various modified examples of the pressing plate of the semiconductor substrate polishing apparatus of the fourth embodiment. Figures 14 (a) to (b) are perspective views illustrating a polishing method using a polishing apparatus for a semiconductor substrate according to the fourth embodiment. V. Figures 15 (a) to (top) are perspective views illustrating a polishing method using a polishing apparatus for a semiconductor substrate according to the fourth embodiment. The 16th (a) culvert is a perspective view showing a semiconductor substrate polishing apparatus according to a fifth embodiment of the present invention. Figure 16 (b) is a perspective view showing a polishing method performed by a polishing device for a semiconductor substrate using the fifth embodiment described above. Figures 17 (a) to (b) are views showing the use of the fifth embodiment described above. A plan view of a polishing method performed by a honing apparatus for a semiconductor substrate. The eighteenth (a) to (b) diagrams show the polishing method implemented by the modified example of the semiconductor substrate polishing device of the fifth embodiment described above. This paper size applies the Chinese National Standard (CNS) A4 specification (210X29? Li) — 1 --- II 丨 install--11- — 丨 order --.— — I 丨 line (please read the note on the back first to write this page) Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs- 36-5 4 A7 B7 4 ^ 5 9 > V. Description of the invention (34) Plan view. Fig. 19 is a perspective view showing a polishing apparatus for a semiconductor substrate according to a sixth embodiment of the present invention. Fig. 20 is a perspective view showing a polishing method used in a polishing apparatus using a semiconductor substrate according to the sixth embodiment. FIG. 21 is a diagram showing a relationship between a supply amount of an abrasive and a polishing ratio used in a polishing device using the present invention and a conventional semiconductor substrate. FIG. 22 is a schematic perspective view showing a conventional polishing device for a semiconductor substrate. Illustration. -[Description of Symbols] 1 1: Fixed plate, 1 1 a: Abrasive cloth holding portion '1 1 b: Rotary shaft, 1 2: Abrasive cloth, 1 3: Substrate, 1 4: Arm, 1 5: Abrasive 1 6: Abrasive supply pipe 1 7: Compressed air supply pipe, 1 7 a: Ejection port, 1 8: Abrasive pressing member, 19: Abrasive holding member, 2 0: Cleaning liquid, 2 1 : Rotating member, 2 1 a: Protrusion, 2 2: Up and down moving member, 2 3: Flat moving member, 2 4: Rotating member》 This paper size applies to China National Standards (CNS > A4waki (210X297 mm) I; Install ~; Order 11 n 1 · ^ (Please read the notes on the back C to write this page) Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs

Claims (1)

454^53 A8 B8 C8 D8454 ^ 53 A8 B8 C8 D8 六、申請專利範圍 第85 1 0 93.15號專利申請案 中文申請專利範圍修正本 民國86年11月修正 1.—種半導體基板之研磨裝置，其特徵爲；具備 具有平坦面且將與該平坦面垂直之軸爲中心旋轉的定 盤，及載置於該定盤之上述平坦面上的研磨布，及將研磨 劑供應於上述研磨布之上面的研磨劑供應手段，及保持半 導體基板並對於上述研磨布施以推壓的基板保持手段，及 將供應於上述研磨布上藉隨著上述定盤之旋轉之離心力而 流動於上述定盤之外側的研磨劑推壓向上述定盤之中心側 ，容許上述研磨劑之來自上述研磨布上之流出下，將上述 研磨劑保持在上述研磨布上的研磨劑推壓手段。 2 .如申請專利範圍第1項所述的半導體基板之研磨 裝置，其中，上述研磨劑推壓手段，係保持在上述研磨布 上，將隨著上述定盤之旋轉的離心力擋接的研磨劑推壓向 上述定盤之中心側的推壓板者。 3. 如申請專利範圍第2項所述的半導體基板之研磨 \ 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 裝置，其中，上述推壓板，係與定盤徑方向交叉且研磨時 之定盤旋轉方向之前方側設成比後方側對於定盤徑方向位 於內側者》 4. 如申請專利範圍第3項所述的半導體基板之研磨 裝置，其中，上述推壓板，係設成與研磨時之定盤旋轉方 向相反方向可旋轉者。 5 .如申請專利範圍第2項或第3項所述的半導體基 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 46. Patent Application No. 85 1 0 93.15 Patent Application Chinese Patent Application Amendment November, 1986 Amendment 1. A polishing device for semiconductor substrates, which is characterized by having a flat surface that will be connected to the flat surface The vertical axis is a fixed plate that rotates around the center, the polishing cloth placed on the flat surface of the fixed plate, and the abrasive supply means for supplying abrasive on the polishing cloth, and holding the semiconductor substrate and The polishing cloth is provided with a pressing substrate holding means, and the abrasive supplied to the polishing cloth by the centrifugal force following the rotation of the platen is pushed to the center side of the platen, and is allowed to be pressed. The abrasive pressing means for holding the abrasive on the abrasive cloth while flowing out of the abrasive on the abrasive cloth. 2. The polishing device for a semiconductor substrate according to item 1 of the scope of the patent application, wherein the abrasive pressing means is held on the abrasive cloth, and the abrasive is blocked by the centrifugal force following the rotation of the fixed plate. A person who presses the pressing plate toward the center side of the fixed plate. 3. Device for grinding semiconductor substrates as described in item 2 of the scope of application \ printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). The fixed plate diameter direction intersects and the front side of the fixed plate rotation direction at the time of polishing is set to be inward of the fixed plate diameter direction than the rear side "4. The polishing device for a semiconductor substrate according to item 3 of the scope of patent application, wherein, The pressing plate is provided to be rotatable in a direction opposite to the rotation direction of the fixed plate during grinding. 5. The basic paper size of the semiconductor as described in item 2 or item 3 of the scope of patent application is applicable to China National Standard (CNS) A4 (210X297 mm) 4 A8 B8 C8 D8 六、申請專利範圍 ' 板之研磨裝置，其中，上述推壓板，係在該推壓板之下面 與上述研磨布之上面之間，設置具有供應於上述研磨布上 之研磨劑之層厚度以下的間隔者。 6. 如申請專利範圍第2項或第3項所述的半導體基 板之硏磨裝置，其中，上述推壓板係具有柔軟性之材料所 構成，設成該推壓板之下面接觸於上述研磨布之上面者。 7. 如申請專利範圍第2項或第3項所述的半導體基 板之研磨裝置，其中，上述推壓板係研磨時之定盤旋轉方 向之後方側並捕集研磨劑的研磨劑捕集部，而研磨時之定 盤旋轉方向之前方側具有在向上述定盤之中心側推壓的研 磨劑推壓部者。 8. 如申請專利範圍第2項或第3項所述的半導體基 板之研磨裝置，其中，上述推壓板，係沿著上述定盤之周 緣部互相隔著間隙設置多數個。 9. 如申請專利範圍第1項所述的半導體基板之研磨 裝置》其中，上述研磨劑推壓手段，係將上述研磨布上之 4 研磨劑噴出向上述定盤之中心側推壓的氣體的氣體噴出手 \ 段者》 1 0 ·如申請專利範圍第9項所述的半導體基板之研 磨裝置，其中，上述氣體噴出手段，係沿著上述定盤之周 緣部設置多數部位者。 11.如申請專利範圍第1項所述的半導體基板之研 磨赛置，其中，上述研磨劑推壓手段，係設在上述研磨布 之上面成爲與該研磨布接觸之狀態或隔些微間隔之狀態而 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） I-------,/k 裝 11 - - (請先閲讀背面之注意事項再填寫本頁) 訂- 經濟部中央標準局員工消費合作社印製 -2 - 454A8 B8 C8 D8 6. The patent application scope of the grinding device of the plate, wherein the above-mentioned pressing plate is arranged between the lower surface of the pressing plate and the upper surface of the above-mentioned polishing cloth, and a layer having an abrasive supplied to the above-mentioned polishing cloth is provided. Spacer below thickness. 6. The honing device for a semiconductor substrate according to item 2 or item 3 of the scope of patent application, wherein the pressing plate is made of a flexible material, and the lower surface of the pressing plate is in contact with the polishing cloth. The upper one. 7. The polishing device for a semiconductor substrate according to item 2 or 3 of the scope of the patent application, wherein the above-mentioned pressing plate is an abrasive-capturing part that collects the abrasive on the rear side of the rotation direction of the fixed disk during polishing, On the other hand, there is an abrasive pressing portion that is pressed toward the center side of the above-mentioned fixed plate on the front side of the rotating direction of the fixed plate during polishing. 8. The polishing device for a semiconductor substrate according to item 2 or item 3 of the scope of patent application, wherein the pressing plates are provided with a plurality of gaps along the peripheral edge portion of the fixed plate. 9. The polishing device for a semiconductor substrate as described in item 1 of the scope of the patent application, wherein the abrasive pressing means is a gas that ejects 4 abrasives on the abrasive cloth toward the center side of the fixed plate. Gas ejection hand \ segmenter "10 · The semiconductor substrate polishing device according to item 9 of the scope of patent application, wherein the gas ejection means is provided with a plurality of parts along the peripheral edge portion of the fixed plate. 11. The polishing method for a semiconductor substrate according to item 1 of the scope of the patent application, wherein the abrasive pressing means is provided on the polishing cloth in a state in contact with the polishing cloth or in a state of being slightly spaced apart. And this paper size is applicable to China National Standard (CNS) A4 (210X297mm) I -------, / k Pack 11--(Please read the precautions on the back before filling this page) Order-Economy Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Education-2-454 9 A8 B8 C8 D8 六、申請專利範圍 與上述定盤相反方向旋轉的旋轉構件者。 1 2.如申請專利範圍第1 1項所述的半導體基板之 研谮裝置，其中，上述旋轉構件之外周面設有凸部者。 1 3 . —種半導體基板之研磨方法，在具有平坦面且載 置在與該平坦面垂直之軸爲中心施以旋轉的定盤之平坦面 上的研磨布之上面供應研磨劑，而且一面將半導體基板向 上述研磨布推壓，一面研磨上述半導體基板的半導體基板 之研磨方法*其待徵爲：具備將供應於上述研磨布上藉隨 著上述定盤之旋轉之離心力而流動於上述定盤之外側的研 磨劑推壓向上述定盤之中心側，容許上述研磨劑之來自上 述研磨布之流出下，將上述研磨劑保持在上述研磨布上的 研磨劑推壓工程。 1 4 .如申請專利範圍第1 3項所述的半導體基板之 研磨方法，其中，上述研磨劑推壓工程，係包括藉由保持 於上述研磨布上之推壓板，將上述研磨布上之研磨劑推壓 向上述定盤之中心側的工程。 * 1 5 .如申請專利範圍第1 4項所述的半導體基板之 ' 研磨方法，其中，上述研磨劑推壓工程，係包括藉由設成 與定盤徑方向徑方向交叉且研磨時之定盤旋轉方向的前方 側比後方側位於定盤徑方向之內側的推壓板，將上述研磨 布上之研磨劑推壓向上述定盤之中心側的工程。 1 6 .如申請專利範圍第1 4項或第1 5項所述的半 導體基板之研磨方法，其中，上述研磨劑推壓工程，係包 括藉由設於與上述研磨布之上面之間具有比供應於上述研 本紙張尺度適用中國國家標準（CNS)A4規格（210X297公釐） ------^---裝-----丨訂-------C (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 經濟部中央標準局員工消费合作社印製 4 5 4.笨 5 a. A8 B8 C8 D8 六、申請專利範圍 磨布上之研磨劑之層厚以下之間隔的推壓板，將上述研磨 布上之研磨劑推壓向上述定盤之中心側的工程。 1 7 .如申請專利範圍第14項·或第1 5項所述的半 導體基板之研磨方法，其中，上述研磨劑推壓工程，係包 括藉由具有柔軟性之材料所構成，設成下面接觸於上述研 磨布之上面，將上述研磨布上之研磨劑推壓向上述定盤之 中心側的工程。 1 8 .如申請專利範圍第1 4項或第1 5項所述的半 導體基板之研磨方法，其中，又具備藉將上述定盤向與研 磨時之旋轉方向相反方向旋轉，排出供應於上述研磨布上 之洗淨液的洗淨液排出工程。 1 9 .如申請專利範圍第1 3項所述的半導體基板之 研磨方法，其中，上述研磨劑推壓工程，係包括將氣體向 上述定盤之中心側噴出，並將上述研磨布上之研磨劑推壓 向上述定盤之中心側的工程。 2 0 .如申請專利範圍第1 3項所述的半導體基板之 研磨方法，其中，上述研磨劑推壓工程，係包括藉由設在 、 上述研磨布之上面成爲與該研磨布接觸之狀態或隔稍微間 隔之狀態而與上述定盤相反方向旋轉的旋轉構件，將上述 研磨布上之研磨劑推壓向上述定盤之中心側的工程。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ----------裝-- - ~ (請先閲讀背面之注意事項再填寫本頁) 訂_ -4 -9 A8 B8 C8 D8 6. Scope of patent application Rotating member rotating in the opposite direction to the fixed plate. 1 2. The device for researching a semiconductor substrate according to item 11 of the scope of patent application, wherein a convex portion is provided on an outer peripheral surface of the rotating member. 1 3. — A method for polishing a semiconductor substrate. A polishing agent is provided on a polishing cloth having a flat surface and placed on a flat surface of a fixed plate that rotates on an axis perpendicular to the flat surface. The semiconductor substrate is pressed against the polishing cloth, and the method of polishing the semiconductor substrate while polishing the semiconductor substrate * is to be levied: it is provided with a flow of the centrifugal force supplied to the polishing cloth with the rotation of the fixed plate to the fixed plate. The abrasive on the outer side is pressed toward the center side of the platen, and the abrasive pressing process of holding the abrasive on the abrasive cloth while allowing the abrasive to flow out from the abrasive cloth is allowed. 14. The method for polishing a semiconductor substrate according to item 13 of the scope of patent application, wherein the above-mentioned abrasive pressing process includes grinding the polishing cloth on the polishing cloth by a pressing plate held on the polishing cloth. A process in which the agent is pushed toward the center side of the fixed plate. * 1 5. The method of polishing a semiconductor substrate as described in item 14 of the scope of the patent application, wherein the above-mentioned abrasive pressing process includes a method for setting the polishing method to intersect with the diameter of the fixed disk in the radial direction. A process in which the pressing plate on the front side of the disk rotation direction is located on the inner side of the fixed disk diameter direction than the rear side and presses the abrasive on the polishing cloth toward the center side of the fixed disk. 16. The method for polishing a semiconductor substrate according to item 14 or item 15 in the scope of the patent application, wherein the above-mentioned abrasive pressing process includes a step of disposing the abrasive substrate with the upper surface of the abrasive cloth. The paper sizes supplied to the above research papers are applicable to Chinese National Standard (CNS) A4 specifications (210X297 mm) ------ ^ --- installation ----- 丨 order ----- C (please first Read the notes on the back and fill out this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 4 5 4.Stupid 5 a. A8 B8 C8 D8 The process of pressing the abrasive plates on the polishing cloth toward the center side of the fixed plate by pressing the plates at intervals below the layer thickness of the abrasive. 17. The method for polishing a semiconductor substrate according to item 14 or item 15 of the scope of the patent application, wherein the above-mentioned abrasive pressing process includes a material made of a flexible material and is provided in contact with the bottom surface. A process of pressing the abrasive on the polishing cloth toward the center side of the fixed plate on the polishing cloth. 18. The method for polishing a semiconductor substrate according to item 14 or item 15 of the scope of patent application, further comprising: rotating the above-mentioned fixed plate in a direction opposite to the rotation direction during polishing, and discharging and supplying the polishing The cleaning liquid discharge process of the cleaning liquid on the cloth. 19. The method for polishing a semiconductor substrate according to item 13 of the scope of patent application, wherein the above-mentioned abrasive pressing process includes ejecting a gas toward the center side of the fixed plate, and polishing the polishing cloth. A process in which the agent is pushed toward the center side of the fixed plate. 20. The method for polishing a semiconductor substrate according to item 13 of the scope of the patent application, wherein the above-mentioned abrasive pressing process includes setting the upper surface of the abrasive cloth in contact with the abrasive cloth, or The rotating member that rotates in a direction opposite to the fixed plate at a slightly spaced state pushes the abrasive on the polishing cloth toward the center side of the fixed plate. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) ---------- Package--~ (Please read the precautions on the back before filling this page) Order _ -4-