JP2983905B2 - Method and apparatus for polishing semiconductor substrate - Google Patents

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、例えばシリコンよ
りなる半導体基板の表面を研磨剤により平坦化処理する
ための化学機械研磨（ＣＭＰ）を行なう半導体基板の研
磨装置及びその方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate polishing apparatus and method for performing chemical mechanical polishing (CMP) for planarizing the surface of a semiconductor substrate made of, for example, silicon with an abrasive.

【０００２】[0002]

【従来の技術】１９９０年以降、シリコン等よりなる半
導体基板に対する化学機械研磨においては、半導体基板
の径が１０ｃｍ以上と大型化し、研磨が枚葉処理化の傾
向にあるため、基板１枚あたりの研磨剤の量が増大して
いる。2. Description of the Related Art Since 1990, in the case of chemical mechanical polishing of a semiconductor substrate made of silicon or the like, the diameter of the semiconductor substrate has been increased to 10 cm or more, and the polishing tends to be performed on a single wafer. The amount of abrasive is increasing.

【０００３】以下、図面を参照しながら、従来の半導体
基板の研磨装置の一例について説明する。Hereinafter, an example of a conventional semiconductor substrate polishing apparatus will be described with reference to the drawings.

【０００４】図２２は従来の研磨装置の概略構成を示し
ており、図２２において、１１は平坦な表面を持つ剛体
よりなる基板保持部１１ａと該基板保持部１１ａの下面
から垂直下方に延びる回転軸１１ｂと該回転軸１１ｂを
回転させる図示しない回転手段とを有する定盤であっ
て、該定盤１１の基板保持部１１ａの表面には研磨布１
２が貼着されている。定盤１１の上方には、半導体基板
１３を保持して回転する基板保持ヘッド１４が設けられ
ており、該基板保持ヘッド１４により半導体基板１３は
回転しながら定盤１１上の研磨布１２に圧接される。ま
た、１５は砥粒（研磨するための微小な粉）を含む液状
の研磨剤であって、該研磨剤１５は、研磨剤供給管１６
から所定量づつ研磨布１２上に供給され、研磨布１２と
半導体基板１３との間に砥粒を供給する。FIG. 22 shows a schematic configuration of a conventional polishing apparatus. In FIG. 22, reference numeral 11 denotes a substrate holding portion 11a made of a rigid body having a flat surface and a rotating member extending vertically downward from the lower surface of the substrate holding portion 11a. A platen having a shaft 11b and rotating means (not shown) for rotating the rotary shaft 11b, and a polishing cloth 1 is provided on the surface of the substrate holding portion 11a of the platen 11;
2 is stuck. A substrate holding head 14 that holds and rotates the semiconductor substrate 13 is provided above the surface plate 11, and the semiconductor substrate 13 is pressed against the polishing cloth 12 on the surface plate 11 while rotating by the substrate holding head 14. Is done. Reference numeral 15 denotes a liquid abrasive containing abrasive grains (fine powder for polishing).
Is supplied onto the polishing cloth 12 by a predetermined amount, and abrasive grains are supplied between the polishing cloth 12 and the semiconductor substrate 13.

【０００５】以上のように構成された研磨装置において
は、定盤１１を回転して研磨剤１５が供給された研磨布
１２を回転させながら、基板保持ヘッド１４により半導
体基板１３を研磨布１２に押しつけることによって、半
導体基板１３の表面を研磨する。In the polishing apparatus configured as described above, the semiconductor substrate 13 is attached to the polishing cloth 12 by the substrate holding head 14 while rotating the platen 11 to rotate the polishing cloth 12 to which the abrasive 15 has been supplied. By pressing, the surface of the semiconductor substrate 13 is polished.

【０００６】このとき、半導体基板１３の表面に凹凸部
があると、半導体基板１３の凸部においては研磨布１２
との接圧が大きいため研磨速度が速くなる一方、半導体
基板１３の凹部においては研磨布１２との接触圧力が小
さいため研磨速度が遅くなる。よって、半導体基板１３
表面の凹凸部が緩和されて半導体基板１３の表面が平坦
になるというものである。この研磨技術は、例えば、
「１９９４年１月号 月刊Ｓｅｍｉｃｏｎｄｕｃｔｏｒ
Ｗｏｒｌｄ」５８〜５９ページや、「Ｓｏｌｉｄ Ｓ
ｔａｔｅ Ｔｅｃｈｎｏｌｏｇｙ」Ｊｕｌｙ．１９９２
／日本語版 ３２〜３７ページなどに紹介されている。At this time, if there are irregularities on the surface of the semiconductor substrate 13, the polishing cloth 12
The contact pressure with the polishing pad 12 is large, so that the polishing rate is high, while the contact pressure with the polishing pad 12 in the concave portion of the semiconductor substrate 13 is small, so that the polishing rate is low. Therefore, the semiconductor substrate 13
The surface irregularities are alleviated, and the surface of the semiconductor substrate 13 becomes flat. This polishing technique, for example,
"January 1994 Monthly Semiconductor"
World "pages 58-59 and" Solid S
state Technology "July. 1992
/ Japanese version 32-37 pages.

【０００７】[0007]

【発明が解決しようとする課題】しかしながら、前記の
研磨装置においては、以下に説明するような問題を有し
ている。However, the above-mentioned polishing apparatus has the following problems.

【０００８】研磨剤の供給量と研磨レートとの関係につ
いて説明すると、研磨レートは、研磨剤１５の供給量の
増加に伴って増大し、或る供給量のところで一定にな
る。そこで、研磨レートが一定になる供給量よりも若干
多い量の研磨剤１５を研磨布１２の上に供給するのが通
常である。The relationship between the supply amount of the abrasive and the polishing rate will be described. The polishing rate increases as the supply amount of the abrasive 15 increases, and becomes constant at a certain supply amount. Therefore, it is usual to supply the abrasive 15 onto the polishing pad 12 in a slightly larger amount than the supply amount at which the polishing rate becomes constant.

【０００９】ところが、前述したように、研磨布１２を
回転させながら研磨剤１５を供給するため、研磨剤１５
は定盤１１の回転に伴う遠心力により、研磨布１２の外
側に流れ出ていく。研磨剤１５の量が所定量よりも少な
くなると、研磨レートは低下する。研磨レートの低下を
補うためには、半導体基板１３を研磨布１２に押しつけ
る圧力を大きくすればよいが、このようにすると、ディ
ッシュイング等の現象が発生し、研磨特性が劣化する等
の問題が発生する。従って、研磨レートが一定になる供
給量よりも若干多い量の研磨剤を常に供給する必要があ
り、研磨を行なうためのコストの大きな部分を研磨剤が
占めることとなる。However, as described above, since the polishing agent 15 is supplied while rotating the polishing pad 12, the polishing agent 15 is supplied.
Flows out of the polishing pad 12 due to the centrifugal force caused by the rotation of the platen 11. When the amount of the polishing agent 15 becomes smaller than the predetermined amount, the polishing rate decreases. In order to compensate for the decrease in the polishing rate, the pressure for pressing the semiconductor substrate 13 against the polishing cloth 12 may be increased. However, in this case, a phenomenon such as dishing occurs and the polishing characteristics are deteriorated. Occur. Therefore, it is necessary to always supply a slightly larger amount of polishing agent than the supply amount at which the polishing rate becomes constant, and the polishing agent occupies a large part of the cost for polishing.

【００１０】そこで、ＵＳＰ４９１０１５５に示される
ように、研磨布の周囲を仕切板により囲むことによって
研磨剤の流出を防ぎ、研磨剤を研磨布上から流れ出ない
ようにする研磨装置及び研磨方法が提案されている。Therefore, as shown in US Pat. No. 4,910,155, there has been proposed a polishing apparatus and a polishing method for preventing the abrasive from flowing out by surrounding the polishing cloth with a partition plate and preventing the abrasive from flowing out of the polishing cloth. ing.

【００１１】しかしながら、この研磨装置及び研磨方法
によると、研磨により発生した研磨布の滓等の不要物が
研磨布上に蓄積される。また、研磨布上で研磨後の半導
体基板の水洗を行なったり、ドレッシング（研磨布表面
のコンディショニング）を行なったりする際に、研磨布
上に水を供給すると、この水も研磨剤と同様に研磨布上
から流れ出ない。これらのため、研磨剤の濃度が変化
し、研磨特性が変化してしまうという新たな問題が発生
する。However, according to the polishing apparatus and the polishing method, unnecessary substances such as polishing cloth residues generated by polishing accumulate on the polishing cloth. Also, when water is supplied onto the polishing cloth when washing the semiconductor substrate after polishing on the polishing cloth or performing dressing (conditioning of the polishing cloth surface), the water is also polished in the same manner as the polishing agent. Does not run off the cloth. For these reasons, there is a new problem that the concentration of the polishing agent changes and the polishing characteristics change.

【００１２】前記に鑑み、本発明は、研磨布上に供給さ
れる洗浄液は研磨布上から排出されるが、研磨布上に供
給される研磨剤は研磨布上に保持されるようにすること
を目的とする。In view of the above, the present invention is directed to a cleaning liquid supplied onto a polishing pad is discharged from the polishing pad, but an abrasive supplied onto the polishing pad is retained on the polishing pad. With the goal.

【００１３】[0013]

【課題を解決するための手段】本発明に係る第１の半導
体基板の研磨装置は、平坦面を有し該平坦面と垂直な軸
を中心に回転する定盤と、該定盤の平坦面上に載置され
た研磨布と、研磨剤を研磨布の上に供給する研磨剤供給
手段と、半導体基板を保持して研磨布に対して押圧する
基板保持手段と、研磨布上に供給され定盤の回転に伴う
遠心力により定盤の外側に流動する研磨剤を定盤の中心
側に押圧する研磨剤押圧手段とを備えている。According to a first aspect of the present invention, there is provided a polishing apparatus for polishing a semiconductor substrate, comprising: a platen having a flat surface and rotating about an axis perpendicular to the flat surface; A polishing cloth placed on the polishing pad, an abrasive supply means for supplying the abrasive onto the polishing cloth, a substrate holding means for holding the semiconductor substrate and pressing against the polishing cloth; And abrasive pressing means for pressing the abrasive flowing to the outside of the surface plate by a centrifugal force accompanying rotation of the surface plate toward the center of the surface plate.

【００１４】第１の半導体基板の研磨装置によると、研
磨剤押圧手段によって、定盤の回転に伴う遠心力により
定盤の外側に流動する研磨剤は、定盤の中心側に押圧さ
れ、半導体基板の研磨に再び利用される。[0014] According to the first semiconductor substrate polishing apparatus, the abrasive flowing to the outside of the platen by the centrifugal force accompanying the rotation of the platen is pressed toward the center side of the platen by the abrasive pressing means. It is used again for polishing the substrate.

【００１５】第１の半導体基板の研磨装置において、研
磨剤押圧手段は、研磨布の上に保持されており、定盤の
回転に伴う遠心力により当接してくる研磨剤を定盤の中
心側に押圧する押圧板であることが好ましい。[0015] In the first semiconductor substrate polishing apparatus, the abrasive pressing means is held on a polishing cloth, and the abrasive coming into contact with centrifugal force accompanying the rotation of the platen is moved to the center side of the platen. It is preferable that the pressure plate is a pressing plate that presses against the surface.

【００１６】研磨剤押圧手段が研磨剤を定盤の中心側に
押圧する押圧板である場合、押圧板は、定盤径方向と交
差し且つ研磨時の定盤回転方向の前方側が後方側よりも
定盤径方向に対して内側に位置するように設けられてい
ることが好ましい。When the abrasive pressing means is a pressing plate for pressing the abrasive toward the center of the platen, the pressing plate intersects the radial direction of the platen and the front side in the rotation direction of the platen during polishing is from the rear side. It is also preferable that the inner plate is also provided so as to be located inside with respect to the radial direction of the platen.

【００１７】このようにすると、押圧板における研磨時
の定盤回転方向の前方側が後方側よりも定盤径方向の内
側に位置しているため、定盤の回転に伴って回転しなが
ら外側に流動する研磨剤は、押圧板により流動する方向
を変えられ、回転しながら定盤の中心側に流動する。In this case, the front side of the pressing plate in the direction of rotation of the surface plate during polishing is located on the inner side in the radial direction of the surface plate than the rear side. The flowing abrasive is changed in the flowing direction by the pressing plate, and flows toward the center of the platen while rotating.

【００１８】この場合、研磨剤の流動方向は、研磨剤の
押圧板に対する相対速度、及び研磨剤が押圧板に衝突し
たときの運動エネルギーの変化に伴う速度ベクトルの変
化から考えることができ、押圧板の形状、位置及び方向
を定盤の回転速度、研磨剤の粘性及び研磨布の表面粗さ
等を考慮して最適化すると、研磨剤を定盤の中心側に押
圧する効果を確実に得ることができる。In this case, the flow direction of the abrasive can be considered from the relative velocity of the abrasive to the pressing plate and the change in the velocity vector due to the change in kinetic energy when the abrasive collides with the pressing plate. When the shape, position, and direction of the plate are optimized in consideration of the rotation speed of the platen, the viscosity of the polishing agent, the surface roughness of the polishing pad, and the like, the effect of pressing the polishing agent toward the center of the platen is reliably obtained. be able to.

【００１９】押圧板が、定盤径方向と交差し且つ研磨時
の定盤回転方向の前方側が後方側よりも定盤径方向に対
して内側に位置するように設けられている場合には、該
押圧板は、研磨時の定盤回転方向と逆方向に回転可能に
設けられていることが好ましい。In the case where the pressing plate is provided so as to intersect the radial direction of the surface plate and be positioned so that the front side in the direction of rotation of the surface plate at the time of polishing is located more inside than the rear side in the radial direction of the surface plate. The pressing plate is preferably provided so as to be rotatable in a direction opposite to the direction of rotation of the platen during polishing.

【００２０】研磨剤押圧手段が研磨剤を定盤の中心側に
押圧する押圧板である場合、押圧板は、該押圧板の下面
と研磨布の上面との間に、研磨布上に供給された研磨剤
の層の厚さ以下の間隔を持つように設けられていること
が好ましい。When the abrasive pressing means is a pressing plate for pressing the abrasive toward the center of the platen, the pressing plate is supplied onto the polishing cloth between the lower surface of the pressing plate and the upper surface of the polishing cloth. It is preferable that the gap is provided so as to have an interval equal to or less than the thickness of the abrasive layer.

【００２１】研磨剤押圧手段が研磨剤を定盤の中心側に
押圧する押圧板である場合、押圧板は、柔軟性を持つ材
料よりなり、該押圧板の下面が研磨布の上面に接するよ
うに設けられていることが好ましい。When the abrasive pressing means is a pressing plate for pressing the abrasive toward the center of the platen, the pressing plate is made of a flexible material such that the lower surface of the pressing plate contacts the upper surface of the polishing cloth. Is preferably provided.

【００２２】研磨剤押圧手段が研磨剤を定盤の中心側に
押圧する押圧板である場合、押圧板は、定盤の周縁部に
沿って互いに隙間をおいて複数個設けられていることが
好ましい。When the abrasive pressing means is a pressing plate for pressing the abrasive toward the center of the surface plate, a plurality of the pressure plates may be provided along the periphery of the surface plate with a gap therebetween. preferable.

【００２３】第１の半導体基板の研磨装置において、研
磨剤押圧手段は、研磨布上の研磨剤を定盤の中心側に押
圧する気体を噴出する気体噴出手段であることが好まし
い。In the first semiconductor substrate polishing apparatus, the abrasive pressing means is preferably gas blowing means for blowing a gas for pressing the abrasive on the polishing cloth toward the center of the platen.

【００２４】研磨剤押圧手段が気体噴出手段である場
合、気体噴出手段は、定盤の周縁部に沿って複数箇所設
けられていることが好ましい。When the abrasive pressing means is a gas ejecting means, it is preferable that the gas ejecting means is provided at a plurality of positions along the peripheral portion of the surface plate.

【００２５】第１の半導体基板の研磨装置において、研
磨剤押圧手段は、研磨布の上に該研磨布と接する状態又
は僅かな隙間をおいた状態で設けられ定盤と逆方向に回
転する回転部材であることが好ましい。In the first semiconductor substrate polishing apparatus, the abrasive pressing means is provided on the polishing cloth in a state of being in contact with the polishing cloth or with a slight gap therebetween, and is rotated in a direction opposite to the surface plate. Preferably, it is a member.

【００２６】研磨剤押圧手段が回転部材である場合、該
回転部材の外周面には凸部が設けられていることが好ま
しい。When the abrasive pressing means is a rotating member, it is preferable that a convex portion is provided on the outer peripheral surface of the rotating member.

【００２７】本発明に係る第２の半導体基板の研磨装置
は、平坦面を有し該平坦面と垂直な軸を中心に回転する
定盤と、該定盤の平坦面上に載置された研磨布と、研磨
剤を研磨布の上に供給する研磨剤供給手段と、半導体基
板を保持して研磨布に対して押圧する基板保持手段と、
定盤の周縁部に、研磨時の定盤回転方向の前方側が後方
側よりも定盤径方向の内側に位置するように固定され、
研磨布上に供給され定盤の回転に伴う遠心力により定盤
の外側に流動する研磨剤を研磨布上に保持する研磨剤保
持部材とを備えている。A polishing apparatus for a second semiconductor substrate according to the present invention has a flat surface and rotates on an axis perpendicular to the flat surface, and is mounted on the flat surface of the flat surface. Abrasive cloth, abrasive supply means for supplying the abrasive onto the polishing cloth, substrate holding means for holding the semiconductor substrate and pressing against the polishing cloth,
Fixed to the periphery of the surface plate, so that the front side in the direction of rotation of the surface plate during polishing is located on the inner side in the diameter direction of the surface plate more than the rear side,
An abrasive holding member for holding the abrasive on the polishing cloth, the abrasive being supplied onto the polishing cloth and flowing to the outside of the surface plate by centrifugal force caused by the rotation of the surface plate.

【００２８】第２の半導体基板の研磨装置によると、定
盤の回転に伴って回転しながら外側に流動する研磨剤
は、研磨剤保持部材により流動する方向を変えられ、研
磨布上に保持される。According to the second semiconductor substrate polishing apparatus, the abrasive flowing outward while rotating with the rotation of the surface plate is changed in direction by the abrasive holding member and held on the polishing cloth. You.

【００２９】第２の半導体基板の研磨装置において、研
磨剤保持部材は、定盤の周縁部に互いに隙間をおいて複
数個設けられていることが好ましい。In the second apparatus for polishing a semiconductor substrate, it is preferable that a plurality of abrasive holding members are provided at the periphery of the surface plate with a gap therebetween.

【００３０】研磨剤保持部材が複数個設けられている場
合、該複数個の研磨剤保持部材のうち隣り合う研磨剤保
持部材は、定盤径方向から見て互いに重なっていること
が好ましい。When a plurality of abrasive holding members are provided, it is preferable that adjacent abrasive holding members among the plurality of abrasive holding members overlap each other when viewed from the radial direction of the platen.

【００３１】第２の半導体基板の研磨装置において、研
磨剤保持部材は、研磨布に対して上方、下方又は外方に
移動可能に設けられており、基板保持部材は半導体基板
を保持した状態で研磨布と平行な平面内で移動可能に設
けられていることが好ましい。In the second semiconductor substrate polishing apparatus, the abrasive holding member is provided so as to be movable upward, downward, or outward with respect to the polishing cloth, and the substrate holding member holds the semiconductor substrate in a state of holding the semiconductor substrate. It is preferable to be provided so as to be movable in a plane parallel to the polishing cloth.

【００３２】本発明に係る第１の半導体基板の研磨方法
は、平坦面を有し該平坦面と垂直な軸を中心に回転する
定盤の平坦面上に載置された研磨布の上に研磨剤を供給
すると共に、半導体基板を研磨布に対して押圧しなが
ら、半導体基板を研磨する半導体基板の研磨方法を対象
とし、研磨布上に供給され定盤の回転に伴う遠心力によ
り定盤の外側に流動する研磨剤を定盤の中心側に押圧す
る研磨剤押圧工程を備えている。The first method of polishing a semiconductor substrate according to the present invention is a method of polishing a semiconductor substrate on a polishing cloth placed on a flat surface of a platen having a flat surface and rotating about an axis perpendicular to the flat surface. A method for polishing a semiconductor substrate, in which an abrasive is supplied and a semiconductor substrate is polished while pressing the semiconductor substrate against a polishing cloth, the surface plate being supplied on the polishing cloth and being subjected to centrifugal force accompanying rotation of the surface plate. And an abrasive pressing step of pressing the abrasive flowing outside to the center of the platen.

【００３３】第１の半導体基板の研磨方法において、研
磨剤押圧工程は、研磨布の上に保持された押圧板によ
り、研磨布上の研磨剤を定盤の中心側に押圧する工程を
含むことが好ましい。In the first method for polishing a semiconductor substrate, the abrasive pressing step includes a step of pressing the abrasive on the polishing cloth toward the center of the platen by a pressing plate held on the polishing cloth. Is preferred.

【００３４】研磨剤押圧工程が押圧板により研磨剤を定
盤の中心側に押圧する工程を含む場合、研磨剤押圧工程
は、定盤径方向と交差し且つ研磨時の定盤回転方向の前
方側が後方側よりも定盤径方向の内側に位置するように
設けられた押圧板により、研磨布上の研磨剤を定盤の中
心側に押圧する工程を含むことが好ましい。When the abrasive pressing step includes a step of pressing the abrasive toward the center of the platen by the pressing plate, the abrasive pressing step intersects the platen radial direction and is forward in the rotational direction of the platen during polishing. It is preferable to include a step of pressing the abrasive on the polishing cloth to the center side of the platen by a pressing plate provided so that the side is located on the inner side in the platen diameter direction from the rear side.

【００３５】研磨剤押圧工程が押圧板により研磨剤を定
盤の中心側に押圧する工程を含む場合、研磨剤押圧工程
は、研磨布の上面との間に研磨布上に供給された研磨剤
の層の厚さ以下の間隔を持つように設けられた押圧板に
より、研磨布上の研磨剤を定盤の中心側に押圧する工程
を含むことが好ましい。In the case where the abrasive pressing step includes the step of pressing the abrasive toward the center of the surface plate by the pressing plate, the abrasive pressing step includes the step of pressing the abrasive supplied on the polishing cloth between the polishing pad and the upper surface of the polishing cloth. It is preferable to include a step of pressing the abrasive on the polishing cloth toward the center of the platen by a pressing plate provided so as to have an interval equal to or less than the thickness of the layer.

【００３６】研磨剤押圧工程が押圧板により研磨剤を定
盤の中心側に押圧する工程を含む場合、研磨剤押圧工程
は、柔軟性を持つ材料よりなり、下面が研磨布の上面に
接するように設けられた押圧板により、研磨布上の研磨
剤を定盤の中心側に押圧する工程を含むことが好まし
い。When the abrasive pressing step includes a step of pressing the abrasive toward the center of the platen by the pressing plate, the abrasive pressing step is made of a flexible material so that the lower surface is in contact with the upper surface of the polishing cloth. It is preferable to include a step of pressing the abrasive on the polishing cloth toward the center of the platen by the pressing plate provided on the base plate.

【００３７】第１の半導体基板の研磨方法は、研磨剤押
圧工程が押圧板により研磨剤を定盤の中心側に押圧する
工程を含む場合、定盤を研磨時の定盤回転方向と逆方向
に回転することにより、研磨布の上に供給された洗浄液
を排出する洗浄液排出工程をさらに備えていることが好
ましい。In the first method for polishing a semiconductor substrate, when the abrasive pressing step includes a step of pressing the abrasive toward the center of the platen by a pressing plate, the polishing plate is rotated in a direction opposite to the direction of rotation of the platen during polishing. Preferably, the method further includes a cleaning liquid discharging step of discharging the cleaning liquid supplied onto the polishing cloth by rotating the cleaning liquid.

【００３８】第１の半導体基板の研磨方法において、研
磨剤押圧工程は、気体を定盤の中心側に向かって噴出し
て、研磨布上の研磨剤を定盤の中心側に押圧する工程を
含むことが好ましい。In the first method for polishing a semiconductor substrate, the abrasive pressing step includes a step of blowing gas toward the center of the platen to press the abrasive on the polishing cloth toward the center of the platen. It is preferred to include.

【００３９】第１の半導体基板の研磨方法において、研
磨剤押圧工程は、研磨布の上に該研磨布と接する状態又
は僅かな隙間をおいた状態で設けられ定盤と逆方向に回
転する回転部材により、研磨布上の研磨剤を定盤の中心
側に押圧する工程を含むことが好ましい。In the first method for polishing a semiconductor substrate, the step of pressing the abrasive is carried out in such a way that the polishing pad is provided on the polishing cloth in a state of being in contact with the polishing cloth or with a slight gap therebetween and rotating in the opposite direction to the surface plate. It is preferable to include a step of pressing the abrasive on the polishing cloth toward the center of the platen with a member.

【００４０】本発明に係る第２の半導体基板の研磨方法
は、平坦面を有し該平坦面と垂直な軸を中心として回転
する定盤の平坦面上に載置された研磨布の上に研磨剤を
供給すると共に、半導体基板を研磨布に対して押圧しな
がら、半導体基板を研磨する半導体基板の研磨方法を対
象とし、定盤の周縁部に、研磨時の定盤回転方向の前方
側が後方側よりも定盤径方向の内側に位置するように固
定された研磨剤保持部材により、研磨布上に供給され定
盤の回転に伴う遠心力により定盤の外側に流動する研磨
剤を研磨布上に保持する研磨剤保持工程を備えている。A second method for polishing a semiconductor substrate according to the present invention is a method for polishing a semiconductor substrate on a polishing cloth placed on a flat surface of a platen having a flat surface and rotating about an axis perpendicular to the flat surface. Abrasive is supplied, and the semiconductor substrate is polished while pressing the semiconductor substrate against the polishing cloth. The method is for polishing a semiconductor substrate. Polishing agent that is supplied on the polishing cloth and flows to the outside of the surface plate by centrifugal force caused by the rotation of the surface plate by the abrasive holding member fixed so as to be located inside the surface plate radial direction from the rear side An abrasive holding step for holding on a cloth is provided.

【００４１】第２の半導体基板の研磨方法によると、定
盤の回転に伴って回転しながら外側に流動する研磨剤
は、研磨剤保持部材により流動する方向を変えられ、回
転しながら定盤の中心側に流動するため、研磨剤は確実
に研磨布上に保持される。According to the second method for polishing a semiconductor substrate, the abrasive flowing outward while rotating with the rotation of the surface plate can be changed in direction of flow by the abrasive holding member. Since the fluid flows toward the center, the abrasive is reliably held on the polishing cloth.

【００４２】第２の半導体基板の研磨方法において、研
磨剤保持工程は、定盤の周縁部に互いに隙間をおいて設
けられた複数個の研磨剤保持部材により、研磨布上の研
磨剤を研磨布上に保持する工程を含むことが好ましい。In the second method for polishing a semiconductor substrate, the polishing agent holding step includes polishing the polishing agent on the polishing cloth by a plurality of polishing agent holding members provided at the periphery of the surface plate with a gap therebetween. It is preferable that the method includes a step of holding on a cloth.

【００４３】第２の半導体基板の研磨方法において、研
磨剤保持工程が複数個の研磨剤保持部材により研磨剤を
研磨布上に保持する工程を含む場合、複数個の研磨剤保
持部材のうち互いに隣り合う研磨剤保持部材は定盤径方
向から見て互いに重なっている複数個の研磨剤保持部材
により、研磨剤を研磨布上に保持する工程を含むことが
好ましい。In the second method for polishing a semiconductor substrate, when the polishing agent holding step includes a step of holding the polishing agent on the polishing pad by a plurality of polishing agent holding members, the polishing agent holding member includes a plurality of polishing agent holding members. It is preferable that adjacent abrasive holding members include a step of holding the abrasive on the polishing pad by a plurality of abrasive holding members overlapping each other when viewed from the platen diameter direction.

【００４４】第２の半導体基板の研磨方法は、定盤を研
磨時の定盤回転方向と逆方向に回転することにより、研
磨布の上に供給された洗浄液を排出する洗浄液排出工程
をさらに備えていることが好ましい。The second method for polishing a semiconductor substrate further comprises a cleaning liquid discharging step of discharging the cleaning liquid supplied on the polishing pad by rotating the surface plate in a direction opposite to the rotation direction of the surface plate during polishing. Is preferred.

【００４５】第２の半導体基板の研磨方法は、研磨剤保
持部材を研磨布に対して上方、下方又は外方に移動する
研磨剤保持部材移動工程と、半導体基板を研磨布と平行
な平面内で移動させることにより、半導体基板の少なく
とも一部分を研磨布から突出させる基板移動工程とをさ
らに備えていることが好ましい。The second method for polishing a semiconductor substrate includes a step of moving the abrasive holding member upward, downward or outward with respect to the polishing cloth, and a step of moving the semiconductor substrate in a plane parallel to the polishing cloth. It is preferable that the method further includes a substrate moving step of causing at least a part of the semiconductor substrate to protrude from the polishing pad by moving the semiconductor substrate.

【００４６】[0046]

【発明の実施の形態】以下、本発明の実施形態に係る研
磨装置及び研磨方法について図面を参照しながら説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a polishing apparatus and a polishing method according to an embodiment of the present invention will be described with reference to the drawings.

【００４７】（第１の実施形態） 図１は、本発明の第１の実施形態に係る研磨装置の概略
斜視図である。(First Embodiment) FIG. 1 is a schematic perspective view of a polishing apparatus according to a first embodiment of the present invention.

【００４８】図１において、１１は定盤であって、該定
盤１１は、平坦な表面を持つ剛体よりなる研磨布保持部
１１ａと、該研磨布保持部１１ａの下面から垂直方向下
方に延びる回転軸１１ｂと、該回転軸１１ｂを回転させ
る図示しない回転手段とを有しており、研磨布保持部１
１ａの上には例えば発泡ポリウレタンよりなる研磨布１
２が貼着されている。定盤１１の上方には、半導体基板
１３を保持して回転する基板保持ヘッド１４が設けられ
ており、該基板保持ヘッド１４により半導体基板１３は
回転しながら定盤１１上の研磨布１２に圧接される。ま
た、１５は砥粒を含む研磨剤であって、該研磨剤１５
は、研磨剤供給管１６から所定量づつ研磨布１２上に供
給され、定盤１１及び基板保持ヘッド１４を回転させる
ことにより、研磨布１２と半導体基板１３との間に供給
される。In FIG. 1, reference numeral 11 denotes a surface plate. The surface plate 11 is a polishing cloth holding portion 11a made of a rigid body having a flat surface, and extends vertically downward from the lower surface of the polishing cloth holding portion 11a. The polishing pad has a rotating shaft 11b and rotating means (not shown) for rotating the rotating shaft 11b.
A polishing cloth 1 made of, for example, foamed polyurethane is placed on 1a.
2 is stuck. A substrate holding head 14 that holds and rotates the semiconductor substrate 13 is provided above the surface plate 11, and the semiconductor substrate 13 is pressed against the polishing cloth 12 on the surface plate 11 while rotating by the substrate holding head 14. Is done. Reference numeral 15 denotes an abrasive containing abrasive grains.
Is supplied onto the polishing cloth 12 by a predetermined amount from the polishing agent supply pipe 16, and is supplied between the polishing cloth 12 and the semiconductor substrate 13 by rotating the platen 11 and the substrate holding head 14.

【００４９】第１の実施形態の特徴として、研磨布１２
の周縁部の上には、該研磨布１２の上に圧縮空気を噴出
させる研磨剤押圧手段としての圧縮空気供給管１７が設
けられており、該圧縮空気供給管１７の噴出口１７ａは
定盤１１の回転中心に向かって開口している。噴出口１
７ａの口径は例えば約３ｍｍであり、該噴出口１７ａか
ら噴射される圧縮空気の流速は約５ｍ／秒に設定されて
いる。これにより、圧縮空気供給管１７の噴出口１７ａ
から噴射された圧縮空気は、研磨剤供給管１６から研磨
布１２上に供給され、定盤１１の回転に伴う遠心力によ
り外方に向かう研磨剤１５を定盤１１の中心部側に押し
戻すことができ、研磨剤１５は、定盤１１の中心部側と
周縁部側との間を往復しつつ砥粒を均一に半導体基板１
３に供給する。As a feature of the first embodiment, the polishing cloth 12
A compressed air supply pipe 17 as an abrasive pressing means for ejecting compressed air onto the polishing pad 12 is provided on the peripheral edge of the polishing pad 12. A jet port 17a of the compressed air supply pipe 17 has a platen. 11 is open toward the center of rotation. Spout 1
The diameter of 7a is, for example, about 3 mm, and the flow velocity of the compressed air injected from the injection port 17a is set to about 5 m / sec. Thereby, the ejection port 17a of the compressed air supply pipe 17
Compressed air is supplied from the abrasive supply pipe 16 onto the polishing pad 12, and pushes the abrasive 15 outward toward the center of the platen 11 by centrifugal force accompanying the rotation of the platen 11. Abrasive 15 is used for uniformly polishing the abrasive grains while reciprocating between the central portion and the peripheral portion of the surface plate 11.
Supply 3

【００５０】尚、噴出口１５ａの口径及び圧縮空気の流
速は、前記のものに限られず、研磨布１２上の研磨剤１
５を定盤１１の中心部側に押し戻すようなものを適宜選
択することができる。圧縮空気供給管１７の噴出口１７
ａは定盤１１の回転中心に向かって開口していたが、噴
出口１７ａより噴出された気体が研磨布１２上の研磨剤
１５を定盤１１の回転中心側に流動させることができる
方向ならばどの様な方向でもよい。The diameter of the jet port 15a and the flow rate of the compressed air are not limited to those described above.
One that pushes back the center 5 of the platen 11 to the center can be appropriately selected. Jet port 17 of compressed air supply pipe 17
Although a is open toward the rotation center of the surface plate 11, if the gas ejected from the ejection port 17a allows the abrasive 15 on the polishing cloth 12 to flow toward the rotation center of the surface plate 11, Any direction may be used.

【００５１】また、圧縮空気供給管１７の噴出口１７ａ
の数は特に限定されないが、複数個例えば５、６か所設
けられていることが好ましい。The jet port 17a of the compressed air supply pipe 17
The number is not particularly limited, but it is preferable that a plurality of, for example, five or six are provided.

【００５２】また、噴出させる気体は圧縮空気とした
が、他のどのような気体を用いても本実施形態の効果は
得られる。もっとも、研磨剤の種類によっては、研磨剤
に対して化学的に安定な不活性ガス例えば窒素ガスを噴
出することが好ましい。Although the gas to be jetted is compressed air, the effect of the present embodiment can be obtained by using any other gas. However, depending on the type of the abrasive, it is preferable to eject an inert gas chemically stable to the abrasive, for example, a nitrogen gas.

【００５３】また、前記第１の実施形態においては、研
磨剤１５は砥粒を含んでいたが、砥粒を含まない液体で
もよい共に、流動性を有するものを広く用いることがで
きる。このことは、以下に説明する各実施形態において
も同様である。In the first embodiment, the abrasive 15 contains abrasive grains. However, the abrasive 15 may be a liquid containing no abrasive grains, and a fluid having a fluidity can be widely used. This is the same in the embodiments described below.

【００５４】（第２の実施形態） 図２及び図３は、本発明の第２の実施形態に係る研磨装
置の概略構造を示し、図２は斜視図であり、図３は平面
図である。(Second Embodiment) FIGS. 2 and 3 show a schematic structure of a polishing apparatus according to a second embodiment of the present invention, FIG. 2 is a perspective view, and FIG. 3 is a plan view. .

【００５５】第２の実施形態においては、第１の実施形
態と同様の定盤１１、研磨布１２、基板保持ヘッド１４
及び研磨剤供給管１６を備えており、半導体基板１３は
回転しながら定盤１１上の研磨布１２に圧接され、研磨
剤１５は研磨剤供給管１６から所定量づつ研磨布１２上
に供給される。In the second embodiment, the same surface plate 11, polishing cloth 12, and substrate holding head 14 as those in the first embodiment are used.
And a polishing agent supply pipe 16. The semiconductor substrate 13 is pressed against the polishing cloth 12 on the surface plate 11 while rotating, and the polishing agent 15 is supplied from the polishing agent supply pipe 16 onto the polishing cloth 12 by a predetermined amount. You.

【００５６】第２の実施形態の特徴として、研磨布１２
の上には、例えば発泡ポリウレタンよりなり研磨剤１５
を定盤１１の中心部側に押圧する研磨剤押圧手段として
の帯板状の研磨剤押圧部材１８が研磨布１２と摺接する
ように設けられている。図３に示すように、研磨剤押圧
部材１８は、径方向の内側部分１８ａが定盤１１の半径
に対して研磨時の回転方向前方側に位置し且つ径方向の
外側部分１８ｂが定盤１１の半径に対して研磨時の回転
方向後方側に位置するように固定されており、具体的に
は、定盤１１の回転中心を中心とする円Ｓと研磨剤押圧
部材１８との交点における円Ｓの接線Ｌと研磨剤押圧部
材１８とが１２０°の角度で交差するように固定されて
いる。As a feature of the second embodiment, the polishing cloth 12
On the top, for example, an abrasive 15 made of foamed polyurethane is used.
A belt-shaped abrasive pressing member 18 as abrasive pressing means for pressing the polishing pad toward the center of the platen 11 is provided so as to be in sliding contact with the polishing cloth 12. As shown in FIG. 3, in the abrasive pressing member 18, the radial inner portion 18 a is located on the front side in the rotational direction during polishing with respect to the radius of the surface plate 11, and the radial outer portion 18 b is Is fixed so as to be located on the rear side in the rotation direction at the time of polishing with respect to the radius of the platen. Specifically, the circle at the intersection of the circle S centered on the rotation center of the surface plate 11 and the abrasive pressing member 18 The tangent L of S and the abrasive pressing member 18 are fixed so as to intersect at an angle of 120 °.

【００５７】これにより、研磨剤供給管１６から研磨布
１２上に供給され定盤１１の回転に伴う遠心力により定
盤１１の外側に向かう研磨剤１５は、研磨剤押圧部材１
８の表面によって定盤１１の中心部側に押し戻され、研
磨布１２の上に萬遍なく広がった状態で半導体基板１３
に供給される。また、研磨布１２上の水等の洗浄液を排
出する場合には、定盤１１を研磨時の回転方向と反対方
向に回転すると、洗浄液が研磨剤押圧部材１８の裏面に
当接して排出が促進される。As a result, the abrasive 15 supplied from the abrasive supply pipe 16 onto the polishing pad 12 toward the outside of the platen 11 due to the centrifugal force caused by the rotation of the platen 11 is pressed by the abrasive pressing member 1.
The semiconductor substrate 13 is pushed back toward the center of the platen 11 by the surface of the base plate 8 and spreads all over the polishing pad 12.
Supplied to When the cleaning liquid such as water on the polishing pad 12 is discharged, when the platen 11 is rotated in a direction opposite to the rotation direction at the time of polishing, the cleaning liquid comes into contact with the back surface of the abrasive pressing member 18 to accelerate the discharge. Is done.

【００５８】尚、研磨剤押圧部材１８の長さ及び角度
は、研磨布１２上の研磨剤１５を定盤１１の中心部側に
押し戻すようなものを適宜選択することができる。The length and angle of the abrasive pressing member 18 can be appropriately selected so that the abrasive 15 on the polishing pad 12 is pushed back toward the center of the platen 11.

【００５９】また、第２の実施形態においては、研磨剤
押圧部材１８の角度は不変であったが、これに代えて、
研磨剤１５の粘度や定盤１１の回転速度に応じて、研磨
剤１５を定盤１１の中心部側に効率良く押し戻すことが
できるように、研磨剤押圧部材１８の定盤１１の半径に
対する角度が可変に設けられていてもよい。In the second embodiment, the angle of the abrasive pressing member 18 is not changed.
The angle of the abrasive pressing member 18 with respect to the radius of the platen 11 so that the abrasive 15 can be efficiently pushed back to the center of the platen 11 in accordance with the viscosity of the abrasive 15 and the rotation speed of the platen 11. May be variably provided.

【００６０】また、研磨剤押圧部材１８は、固定されて
いたが、これに代えて、定盤１１の研磨時の回転方向に
対して相対的に負の方向に回転するように設けられてい
てもよい。この場合には、研磨剤押圧部材１８が基板保
持ヘッド１４に衝突しない長さ及び位置に設ける必要が
ある。このようにすると、研磨布１２の上に供給される
洗浄液を研磨剤押圧部材１８に裏面により効率良く排出
することができる。The abrasive pressing member 18 is fixed, but is instead provided so as to rotate in a negative direction relative to the rotational direction of the platen 11 during polishing. Is also good. In this case, it is necessary to provide the abrasive pressing member 18 at a length and a position where the abrasive pressing member 18 does not collide with the substrate holding head 14. In this way, the cleaning liquid supplied on the polishing cloth 12 can be efficiently discharged to the abrasive pressing member 18 from the back surface.

【００６１】また、研磨剤押圧部材１８の材質として
は、発泡ポリウレタンに限られず、他のどのようなもの
でもよいが、軟質材料、例えば、ポリエチレン、ポリプ
ロピレン、ポリスチレン、ポリ塩化ビニル、テフロン系
材料又はブタジエンゴム類等のゴム類を使用すると、図
４に示すように、研磨剤押圧部材１８が変形して研磨布
１２の表面に追従するので好ましい。The material of the abrasive pressing member 18 is not limited to polyurethane foam, but may be any other material. For example, a soft material such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, Teflon-based material or It is preferable to use rubbers such as butadiene rubber because the abrasive pressing member 18 is deformed and follows the surface of the polishing cloth 12 as shown in FIG.

【００６２】さらに、研磨剤押圧部材１８は、研磨布１
２と摺接することなく、研磨剤１５を定盤１１の中心部
側に押し戻すことができる程度の大きさの隙間（研磨剤
１５の層の厚さ以下の隙間）を研磨布１２との間に持っ
ていてもよい。このようにすると、研磨剤押圧部材１８
と研磨布１２との摺接に伴う滓が発生しないので好まし
い。Further, the polishing agent pressing member 18 is
A gap (a gap less than the thickness of the layer of the abrasive 15) is large enough to push the abrasive 15 back to the center of the surface plate 11 without sliding contact with the polishing pad 12. You may have one. By doing so, the abrasive pressing member 18
It is preferable because no slag is generated due to the sliding contact between the polishing pad 12 and the polishing pad 12.

【００６３】図５（ａ）〜（ｄ）及び図６（ａ）〜
（ｄ）は研磨剤押圧部材１８の形状及び数の変形例を示
しており、図５（ａ）〜（ｄ）及び図６（ａ）〜（ｄ）
に示すように、研磨剤押圧部材１８の形状及び数は限定
されず、研磨剤１５の粘度や定盤１１の回転速度に応じ
て、適宜変更することができる。研磨剤押圧部材１８の
径方向の外側部分が研磨剤１５を捕集する機能を有し、
研磨剤押圧部材１８の径方向の内側部分が捕集された研
磨剤１５を基板保持ヘッド１４側に押圧する機能を有す
るように、図５（ｂ）又は（ｃ）に示すように、研磨剤
押圧部材１８をくの字状又は凹状に屈曲させてもよい。FIGS. 5A to 5D and FIGS.
(D) shows a modification of the shape and the number of the abrasive pressing members 18, and FIGS. 5 (a) to (d) and FIGS. 6 (a) to (d).
As shown in (1), the shape and number of the abrasive pressing members 18 are not limited, and can be appropriately changed according to the viscosity of the abrasive 15 and the rotation speed of the platen 11. A radially outer portion of the abrasive pressing member 18 has a function of collecting the abrasive 15,
As shown in FIG. 5B or FIG. 5C, the abrasive 15 has a function of pressing the abrasive 15 collected on the radially inner portion of the abrasive pressing member 18 toward the substrate holding head 14. The pressing member 18 may be bent in a U-shape or a concave shape.

【００６４】以下、第２の実施形態に係る研磨装置を用
いて行なう研磨方法について図７を参照しながらを説明
する。Hereinafter, a polishing method performed by using the polishing apparatus according to the second embodiment will be described with reference to FIG.

【００６５】まず、図７（ａ）に示すように、半導体基
板１３を研磨面を下側にして基板保持ヘッド１４に装着
して研磨布１２上に圧接する。First, as shown in FIG. 7A, the semiconductor substrate 13 is mounted on the substrate holding head 14 with the polishing surface facing down, and pressed against the polishing cloth 12.

【００６６】次に、図７（ｂ）に示すように、研磨剤供
給管１６から研磨剤１５を研磨布１２の上における定盤
１１の中心部付近に供給すると共に、定盤１１及び基板
保持ヘッド１４を反時計回り（ＣＣＷ）にそれぞれ回転
させる。このようにすると、定盤１１の回転に伴う遠心
力のために研磨剤１５は研磨布１２の外側に向かって流
動し、半導体基板１３と研磨布１２の界面に供給され
る。Next, as shown in FIG. 7B, an abrasive 15 is supplied from the abrasive supply pipe 16 to the vicinity of the center of the platen 11 on the polishing pad 12, and the platen 11 and the substrate holding member are held. The heads 14 are each rotated counterclockwise (CCW). Thus, the abrasive 15 flows toward the outside of the polishing pad 12 due to the centrifugal force accompanying the rotation of the platen 11, and is supplied to the interface between the semiconductor substrate 13 and the polishing pad 12.

【００６７】図７（ｃ）に示すように、研磨布１２上の
研磨剤１５は、定盤１１の回転に伴う遠心力のために研
磨布１２の外側に流れようとするが、定盤１１がほぼ１
回転する間に研磨剤押圧部材１８に当接して、研磨布１
２の中央部側に戻され、半導体基板１３の研磨に再度使
用される。As shown in FIG. 7C, the abrasive 15 on the polishing pad 12 tends to flow outside the polishing pad 12 due to the centrifugal force accompanying the rotation of the platen 11. But almost 1
While rotating, the abrasive cloth pressing member 18 comes into contact with the abrasive pressing member 18 and the polishing cloth 1
2 and is used again for polishing the semiconductor substrate 13.

【００６８】半導体基板１３に対する研磨が終了する
と、半導体基板１３の研磨面の洗浄や研磨布１２上の研
磨剤１５などを洗浄するため、研磨布１２上に水などの
洗浄液を供給する。その後、定盤１１及び研磨布１２上
に残存する洗浄液などを排出するために、定盤１１を時
計回り（ＣＷ）に回転させる。このようにすると、洗浄
液は研磨剤押圧部材１８の裏面によって、研磨布１２の
外方に押し出されるので、研磨剤押圧部材１８が設けら
れていない場合よりも効率良く洗浄液の排出を行なうこ
とができる。When the polishing of the semiconductor substrate 13 is completed, a cleaning liquid such as water is supplied onto the polishing cloth 12 in order to clean the polished surface of the semiconductor substrate 13 and the polishing agent 15 on the polishing cloth 12. Thereafter, the surface plate 11 is rotated clockwise (CW) in order to discharge the cleaning liquid and the like remaining on the surface plate 11 and the polishing cloth 12. With this configuration, the cleaning liquid is pushed out of the polishing pad 12 by the back surface of the abrasive pressing member 18, so that the cleaning liquid can be discharged more efficiently than when the abrasive pressing member 18 is not provided. .

【００６９】尚、前記の研磨方法においては、定盤１１
及び基板保持ヘッド１４を研磨剤１５の供給後に回転さ
せたが、定盤１１の回転時に研磨剤１５が供給されてい
るようにすれば、定盤１１及び基板保持ヘッド１４の回
転タイミングと研磨剤１５の供給のタイミングとは適宜
変更可能である。In the above polishing method, the surface plate 11
And the substrate holding head 14 is rotated after the supply of the polishing agent 15, but if the polishing agent 15 is supplied at the time of rotation of the surface plate 11, the rotation timing of the surface plate 11 and the substrate holding head 14 and the polishing agent The supply timing of 15 can be changed as appropriate.

【００７０】また、定盤１１の回転方向は、研磨時にＣ
ＣＷ、洗浄液の排出時にＣＷとしたが、排水時に定盤１
１の回転方向を変えない場合には、洗浄液の排出効果が
低下するだけであって、研磨剤１５による研磨効果は殆
ど変わらない。The direction of rotation of the surface plate 11 is set to C
CW was set to CW when the cleaning liquid was discharged.
If the rotation direction of 1 is not changed, only the effect of discharging the cleaning liquid is reduced, and the effect of polishing by the abrasive 15 is hardly changed.

【００７１】また、研磨剤１５を供給する位置は、研磨
布１２の上における定盤１１の中心部でなくても、研磨
剤押圧部材１８の外側の端部よりも内側であればよい。The position at which the abrasive 15 is supplied is not limited to the center of the platen 11 on the polishing pad 12, but may be any position inside the outer end of the abrasive pressing member 18.

【００７２】（第３の実施形態） 図８は、本発明の第３の実施形態に係る研磨装置の概略
構造を示す斜視図であって、第３の実施形態において
は、第１の実施形態と同様の定盤１１、研磨布１２、基
板保持ヘッド１４及び研磨剤供給管１６を備えており、
半導体基板１３は回転しながら定盤１１上の研磨布１２
に圧接され、研磨剤１５は研磨剤供給管１６から所定量
づつ研磨布１２上に供給される。(Third Embodiment) FIG. 8 is a perspective view showing a schematic structure of a polishing apparatus according to a third embodiment of the present invention. In the third embodiment, the first embodiment is described. A platen 11, a polishing cloth 12, a substrate holding head 14, and an abrasive supply pipe 16 are provided.
The semiconductor substrate 13 is rotated and the polishing cloth 12 on the surface plate 11 is rotated.
The abrasive 15 is supplied onto the polishing cloth 12 by a predetermined amount from an abrasive supply pipe 16.

【００７３】第３の実施形態の特徴として、研磨布１２
の上における基板保持ヘッド１４の反対側には、研磨布
１２と接する状態又は僅かの隙間をおくように設けられ
た回転可能な研磨剤押圧手段としての円形状の回転部材
２１が設けられている。回転部材２１の直径は基板保持
ヘッド１４の直径よりも大きく設定され、回転部材２１
の一部分は研磨布１２の周縁部から外側に突出してい
る。また、回転部材２１は、研磨時には定盤１１と逆方
向に回転する一方、洗浄液等の排出時には定盤と同方向
に回転する。As a feature of the third embodiment, the polishing cloth 12
On the other side of the substrate holding head 14 on the upper side, there is provided a circular rotating member 21 as a rotatable abrasive pressing means provided in contact with the polishing pad 12 or with a slight gap. . The diameter of the rotating member 21 is set to be larger than the diameter of the substrate holding head 14,
Of the polishing cloth 12 protrudes outward from the peripheral edge of the polishing pad 12. The rotating member 21 rotates in the opposite direction to the surface plate 11 during polishing, and rotates in the same direction as the surface plate when discharging cleaning liquid or the like.

【００７４】これにより、図９に示すように、研磨剤供
給管１６から研磨布１２上に供給され定盤１１の回転に
伴う遠心力により定盤１１の外側に向かう研磨剤１５
は、回転部材２１の外周面に当接した後、定盤１１と逆
方向に回転する回転部材２１の外周面に沿って定盤１１
の中心部側に押し戻され、研磨布１２の上に萬遍なく広
がった状態で半導体基板１３に供給される。尚、図９に
おいて研磨布１２の上の矢印は、研磨時における研磨剤
１５の流動方向を概念的に示している。この場合、研磨
布１２の上における周縁部には研磨剤１５の表面張力に
より研磨剤１５ａが溜まっているが、回転部材２１の一
部分が研磨布１２の周縁部から外側に突出しているの
で、研磨剤１５ａは回転部材２１に当接した後、回転部
材２１の回転に伴って定盤１１の中心部側に押し戻され
る。As a result, as shown in FIG. 9, the polishing slurry 15 supplied onto the polishing pad 12 from the polishing agent supply pipe 16 and moving toward the outside of the platen 11 by centrifugal force accompanying the rotation of the platen 11.
After the abutment on the outer peripheral surface of the rotating member 21, the surface plate 11
And is supplied to the semiconductor substrate 13 in a state of being spread all over the polishing pad 12. In FIG. 9, the arrow above the polishing pad 12 conceptually indicates the flow direction of the polishing agent 15 during polishing. In this case, the polishing agent 15 a is accumulated on the peripheral edge of the polishing pad 12 due to the surface tension of the abrasive 15. However, since a part of the rotating member 21 protrudes outward from the peripheral edge of the polishing pad 12, polishing is performed. After the agent 15 a comes into contact with the rotating member 21, the agent 15 a is pushed back toward the center of the platen 11 as the rotating member 21 rotates.

【００７５】一方、研磨布１２の上の洗浄液を排出する
際には、洗浄液は定盤１１と同方向に回転する回転部材
２１の外周面に沿って定盤１１の外側に流動するので、
洗浄液の排出が促進される。On the other hand, when the cleaning liquid on the polishing pad 12 is discharged, the cleaning liquid flows to the outside of the surface plate 11 along the outer peripheral surface of the rotating member 21 rotating in the same direction as the surface plate 11.
The discharge of the cleaning liquid is promoted.

【００７６】尚、回転部材２１の平面形状は円形に限ら
れないが、図１０に示すように、回転部材２１の外周面
に凸部２１ａを設けると、研磨剤１５が定盤１１と逆方
向に回転する回転部材２１の外周面に沿って定盤１１の
中心部側に押し戻される効果が促進される。また、第３
の実施形態においては、研磨剤押圧手段として専用の回
転部材２１を設けたが、専用の回転部材２１に代えて、
基板保持ヘッド１４と同じ形状の回転部材を設けてもよ
い。Although the plane shape of the rotating member 21 is not limited to a circle, as shown in FIG. 10, when a convex portion 21a is provided on the outer peripheral surface of the rotating member 21, the abrasive 15 The effect of being pushed back to the center portion side of the surface plate 11 along the outer peripheral surface of the rotating member 21 that rotates is promoted. Also, the third
In the embodiment, the dedicated rotating member 21 is provided as the abrasive pressing means, but instead of the dedicated rotating member 21,
A rotating member having the same shape as the substrate holding head 14 may be provided.

【００７７】（第４の実施形態） 図１１及び図１２は、本発明の第４の実施形態に係る研
磨装置の概略構造を示し、図１１は斜視図であり、図１
２は平面図である。(Fourth Embodiment) FIGS. 11 and 12 show a schematic structure of a polishing apparatus according to a fourth embodiment of the present invention. FIG. 11 is a perspective view, and FIG.
2 is a plan view.

【００７８】第４の実施形態においては、第１の実施形
態と同様の定盤１１、研磨布１２、基板保持ヘッド１４
及び研磨剤供給管１６を備えており、半導体基板１３は
回転しながら定盤１１上の研磨布１２に圧接され、研磨
剤１５は研磨剤供給管１６から所定量づつ研磨布１２上
に供給される。In the fourth embodiment, the same surface plate 11, polishing cloth 12, and substrate holding head 14 as those in the first embodiment are used.
And a polishing agent supply pipe 16. The semiconductor substrate 13 is pressed against the polishing cloth 12 on the surface plate 11 while rotating, and the polishing agent 15 is supplied from the polishing agent supply pipe 16 onto the polishing cloth 12 by a predetermined amount. You.

【００７９】第４の実施形態の特徴として、研磨布１２
の径は定盤１１の径よりも小さく、研磨布１２は定盤１
１の中央部に載置されている。また、定盤１１の周縁部
１１ｃの上には、例えばポリ塩化ビニルよりなり研磨剤
１５を研磨布１２の上に保持する研磨剤保持手段として
の複数の帯板状の研磨剤保持部材１９が研磨布１２の外
周面に沿って設けられている。各研磨剤保持部材１９
は、その上部が研磨布１２の表面よりも上になるような
高さを有していると共に、研磨時の回転方向の前方側が
後方側よりも研磨布１２の径方向の内側に位置するよう
に設けられており、具体的には、研磨布１２の外周面の
接線方向に対して約３０度の角度になるように固定され
ている。As a feature of the fourth embodiment, the polishing cloth 12
Is smaller than the diameter of the platen 11, and the polishing cloth 12 is
1 in the center. A plurality of strip-shaped abrasive holding members 19 as abrasive holding means made of, for example, polyvinyl chloride and holding the abrasive 15 on the polishing cloth 12 are provided on the peripheral portion 11c of the platen 11. It is provided along the outer peripheral surface of the polishing cloth 12. Each abrasive holding member 19
Has a height such that the upper part thereof is higher than the surface of the polishing pad 12, and such that the front side in the rotational direction at the time of polishing is positioned radially inward of the polishing pad 12 more than the rear side. Specifically, the polishing pad 12 is fixed at an angle of about 30 degrees with respect to the tangential direction of the outer peripheral surface of the polishing pad 12.

【００８０】第２の実施形態においては、研磨剤押圧部
材１８は研磨布１２と共に回転しないことを原則とし、
これにより、研磨剤１５は定盤１１の中心部側に押し戻
されるのに対して、第４の実施形態においては、研磨剤
保持部材１９は研磨布１２と共に回転することを原則と
し、これにより、研磨剤１５は研磨布１２の上に溜め
る。すなわち、研磨剤供給管１６から研磨布１２上に供
給され定盤１１の回転に伴う遠心力により定盤１１の外
側に向かう研磨剤１５は、研磨剤保持部材１９に当たっ
て流れる方向を変えられ、研磨布１２の上に溜められる
ので、研磨布１２の上に萬遍なく広がった状態で半導体
基板１３の研磨に供給される。In the second embodiment, the abrasive pressing member 18 does not rotate with the polishing cloth 12 in principle.
As a result, while the abrasive 15 is pushed back toward the center of the surface plate 11, in the fourth embodiment, the abrasive holding member 19 rotates with the polishing cloth 12 in principle. The polishing agent 15 is stored on the polishing cloth 12. That is, the abrasive 15 supplied from the abrasive supply pipe 16 onto the polishing pad 12 and directed to the outside of the platen 11 by the centrifugal force caused by the rotation of the platen 11 changes its flowing direction when hitting the abrasive holding member 19, and Since it is stored on the cloth 12, it is supplied to the polishing of the semiconductor substrate 13 in a state of being spread all over the polishing cloth 12.

【００８１】尚、研磨剤保持部材１９の長さ及び角度
は、研磨布１２上の研磨剤１５を研磨布１２の上に保持
できるようなものに適宜選択することができる。また、
隣り合う保持部材１９同士が定盤１１の径方向に重なる
ように設けられていると、研磨剤１５の保持がより確実
になる。The length and angle of the abrasive holding member 19 can be appropriately selected so that the abrasive 15 on the polishing cloth 12 can be held on the polishing cloth 12. Also,
When the adjacent holding members 19 are provided so as to overlap with each other in the radial direction of the surface plate 11, the holding of the abrasive 15 becomes more reliable.

【００８２】また、研磨剤保持部材１９は定盤１１の周
縁部１１ｃの上に設けられずに、研磨布１２の上に設け
られていてもよい。The abrasive holding member 19 may be provided on the polishing cloth 12 instead of on the peripheral edge 11c of the surface plate 11.

【００８３】また、研磨剤保持部材１９の材質は、ポリ
塩化ビニルに限られず、第２の実施形態と同様、他のど
のような材質を用いてもよい。The material of the abrasive holding member 19 is not limited to polyvinyl chloride, but any other material may be used as in the second embodiment.

【００８４】図１３（ａ）〜（ｄ）は研磨剤保持部材１
９の形状、設置角度及び数の変形例を示しており、図１
３（ａ）〜（ｄ）に示すように、研磨剤保持部材１９の
形状、設置角度及び数は限定されず、研磨剤１５の粘度
や定盤１１の回転速度に応じて、適宜変更することがで
きる。すなわち、研磨剤保持部材１９は、くの字状又は
凹状に屈曲していてもよい。FIGS. 13A to 13D show the abrasive holding member 1.
9 shows a modification of the shape, the installation angle and the number of FIG.
As shown in FIGS. 3A to 3D, the shape, the installation angle, and the number of the abrasive holding members 19 are not limited, and may be appropriately changed according to the viscosity of the abrasive 15 and the rotation speed of the platen 11. Can be. That is, the abrasive holding member 19 may be bent in a U-shape or a concave shape.

【００８５】以下、第４の実施形態に係る研磨装置を用
いて行なう研磨方法について図１４（ａ），（ｂ）及び
図１５（ａ），（ｂ）を参照しながらを説明する。Hereinafter, a polishing method using the polishing apparatus according to the fourth embodiment will be described with reference to FIGS. 14 (a) and 14 (b) and FIGS. 15 (a) and 15 (b).

【００８６】まず、図１４（ａ）に示すように、半導体
基板１３を研磨面を下側にして基板保持ヘッド１４に装
着して研磨布１２上に圧接する。First, as shown in FIG. 14A, the semiconductor substrate 13 is mounted on the substrate holding head 14 with the polished surface facing down, and pressed against the polishing cloth 12.

【００８７】次に、図１４（ｂ）に示すように、研磨剤
供給管１６から研磨剤１５を研磨布１２の上における定
盤１１の中心部付近に供給すると共に、定盤１１及び基
板保持ヘッド１４を時計回り（ＣＷ）に回転させる。こ
のようにすると、定盤１１の回転に伴う遠心力のために
研磨剤１５は研磨布１２の外側に向かって流動し、半導
体基板１３と研磨布１２との界面に供給される。Next, as shown in FIG. 14B, the abrasive 15 is supplied from the abrasive supply pipe 16 to the vicinity of the center of the platen 11 on the polishing pad 12, and the platen 11 and the substrate holding member are held. The head 14 is rotated clockwise (CW). By doing so, the abrasive 15 flows toward the outside of the polishing pad 12 due to the centrifugal force accompanying the rotation of the platen 11, and is supplied to the interface between the semiconductor substrate 13 and the polishing pad 12.

【００８８】図１５（ａ）に示すように、研磨布１２上
の研磨剤１５は、定盤１１の回転に伴う遠心力のために
研磨布１２の外側に流れようとするが、研磨剤保持部材
１９の内面に当接し、研磨剤保持部材１９の内面に沿っ
て研磨剤保持部材１９の回転方向前方側（研磨布１２の
径方向外側）から回転方向後方側（研磨布１２の径方向
内側）に流動し、その後、次の研磨剤保持部材１９の回
転方向前方側に移動する。研磨剤１５は前記のような流
動を繰り返すことにより、研磨布１２の上に保持され、
半導体基板１３の研磨に再度使用される。As shown in FIG. 15A, the abrasive 15 on the polishing cloth 12 tends to flow outside the polishing cloth 12 due to the centrifugal force accompanying the rotation of the platen 11, but the abrasive 15 Abuts the inner surface of the member 19, and moves along the inner surface of the abrasive holding member 19 from the front in the rotational direction of the abrasive holding member 19 (radially outside of the polishing cloth 12) to the rear in the rotational direction (radial inside of the polishing cloth 12). ), And then moves forward in the rotational direction of the next abrasive holding member 19. The polishing agent 15 is held on the polishing cloth 12 by repeating the flow as described above,
It is used again for polishing the semiconductor substrate 13.

【００８９】半導体基板１３に対する研磨が終了する
と、半導体基板１３の被研磨面を洗浄したり研磨布１２
上の研磨剤１５を洗い流したりするために、研磨布１２
上に水などの洗浄液を供給する。その後、定盤１１及び
研磨布１２上に残存する洗浄液などを排出するために、
定盤１１を反時計回り（ＣＣＷ）に回転させる。このよ
うにすると、図１５（ｂ）に示すように、洗浄液２０は
前述した研磨剤１５と逆方向の流動をするので、研磨剤
保持部材１９が設けられていない場合よりも効率良く洗
浄液２０の排出を行なうことができる。When the polishing of the semiconductor substrate 13 is completed, the surface to be polished of the semiconductor substrate 13 is cleaned or the polishing pad 12 is polished.
In order to wash away the abrasive 15 above, the polishing cloth 12
Supply a cleaning liquid such as water on the top. After that, in order to discharge the cleaning liquid and the like remaining on the surface plate 11 and the polishing cloth 12,
The platen 11 is rotated counterclockwise (CCW). In this case, as shown in FIG. 15B, the cleaning liquid 20 flows in the opposite direction to the above-mentioned abrasive 15, so that the cleaning liquid 20 is more efficiently used than when the abrasive holding member 19 is not provided. Discharge can be performed.

【００９０】尚、定盤１１の回転方向は、半導体基板１
３の研磨時にＣＷ、洗浄液２０の排出時にＣＣＷとした
が、研磨剤保持部材１９の設置される方向を内外逆にす
る場合には、定盤１１の回転方向も逆にする。The direction of rotation of the platen 11 depends on the semiconductor substrate 1.
Although the CW was used during polishing and the CCW was used when the cleaning liquid 20 was discharged, when the direction in which the abrasive holding member 19 was installed was reversed inside and outside, the rotation direction of the platen 11 was also reversed.

【００９１】（第５の実施形態） 図１６（ａ）は、本発明の第５の実施形態に係る研磨装
置の概略斜視図である。(Fifth Embodiment) FIG. 16A is a schematic perspective view of a polishing apparatus according to a fifth embodiment of the present invention.

【００９２】図１６（ａ）に示すように、第５の実施形
態においても、第１の実施形態と同様の定盤１１、研磨
布１２、基板保持ヘッド１４及び研磨剤供給管１６を備
えており、半導体基板１３は回転しながら定盤１１上の
研磨布１２に圧接され、研磨剤１５は研磨剤供給管１６
から所定量づつ研磨布１２上に供給される。尚、図１６
（ａ）においては、定盤１１の研磨布保持部１１ａは図
示を省略している。As shown in FIG. 16 (a), the fifth embodiment also includes the same surface plate 11, polishing cloth 12, substrate holding head 14, and abrasive supply pipe 16 as those of the first embodiment. The semiconductor substrate 13 is pressed against the polishing pad 12 on the surface plate 11 while rotating, and the polishing agent 15 is supplied to the polishing agent supply pipe 16.
Is supplied onto the polishing cloth 12 by a predetermined amount. Note that FIG.
In (a), the illustration of the polishing cloth holding portion 11a of the surface plate 11 is omitted.

【００９３】第５の実施形態の特徴として、定盤１１の
研磨布保持部１１ａの外側には、定盤１１に対して上下
方向に移動すると共に定盤１１とは別の回転手段により
回転するリング状の上下動部材２２が設けられている。
上下動部材２２の上には、第４の実施形態と同様の形状
を有し、研磨剤１５を研磨布１２の上に保持する研磨剤
保持手段としての複数の帯板状の研磨剤保持部材１９が
研磨布１２の外周面に沿って設けられており、該研磨剤
保持部材１９は上下動部材２２の上下運動に伴って研磨
布１２に対して上下方向に移動する。研磨剤保持部材１
９は、研磨時にはその上部が研磨布１２の表面よりも上
になるように保持される一方、洗浄時にはその上部が研
磨布１２の表面よりも下になるように保持される。As a feature of the fifth embodiment, on the outside of the polishing pad holding portion 11a of the platen 11, the platen moves vertically with respect to the platen 11 and is rotated by a rotating means different from the platen 11. A ring-shaped vertically moving member 22 is provided.
A plurality of strip-shaped abrasive holding members having a shape similar to that of the fourth embodiment and serving as an abrasive holding means for holding the abrasive 15 on the polishing cloth 12 are provided on the vertically moving member 22. 19 is provided along the outer peripheral surface of the polishing pad 12, and the abrasive holding member 19 moves up and down with respect to the polishing pad 12 with the up and down movement of the up and down moving member 22. Abrasive holding member 1
9 is held such that its upper part is higher than the surface of the polishing cloth 12 during polishing, while it is held so that its upper part is lower than the surface of the polishing cloth 12 during cleaning.

【００９４】また、第５の実施形態の特徴として、基板
保持ヘッド１４のアーム１４ａは、研磨布１２の表面に
沿って回転運動するように設けられている。As a feature of the fifth embodiment, the arm 14a of the substrate holding head 14 is provided so as to rotate along the surface of the polishing pad 12.

【００９５】研磨剤保持部材１９の平面的な配置につい
ては、第４の実施形態と同様であって、研磨剤供給管１
６から研磨布１２上に供給され定盤１１の回転に伴う遠
心力により定盤１１の外側に向かう研磨剤１５は、研磨
剤保持部材１９に当たって流れる方向を変えられ、研磨
布１２の上に溜められるので、研磨布１２の上に萬遍な
く広がった状態で半導体基板１３の研磨に供給される。The planar arrangement of the abrasive holding member 19 is the same as that of the fourth embodiment.
The abrasive 15 supplied from 6 to the polishing cloth 12 and directed to the outside of the surface plate 11 by the centrifugal force caused by the rotation of the surface plate 11 changes its flowing direction upon hitting the abrasive holding member 19, and is stored on the polishing cloth 12. Accordingly, the semiconductor substrate 13 is supplied to the polishing of the semiconductor substrate 13 in a state of being spread evenly on the polishing cloth 12.

【００９６】以下、第５の実施形態に係る研磨装置を用
いて行なう研磨方法について、図１６（ａ），（ｂ）及
び図１７（ａ），（ｂ）を参照しながら説明する。Hereinafter, a polishing method performed by using the polishing apparatus according to the fifth embodiment will be described with reference to FIGS. 16 (a) and 16 (b) and FIGS. 17 (a) and 17 (b).

【００９７】まず、第２の実施形態に係る研磨装置を用
いて行なう研磨方法と同様に、半導体基板１３を研磨面
を下側にして基板保持ヘッドに装着して研磨布１２上に
圧接する。First, the semiconductor substrate 13 is mounted on the substrate holding head with the polished surface facing down and pressed against the polishing pad 12 in the same manner as in the polishing method using the polishing apparatus according to the second embodiment.

【００９８】次に、図１６（ａ）に示すように、研磨剤
供給管１６から研磨剤１５を研磨布１２の上における定
盤１１の中心部付近に供給すると共に、定盤１１及び基
板保持ヘッド１４をそれぞれ回転させる。このようにす
ると、定盤１１の回転に伴う遠心力のために研磨剤１５
は研磨布１２の外側に向かって流動し、半導体基板１３
と研磨布１２の界面に供給される。この場合、研磨布１
２上の研磨剤１５は、定盤１１の回転に伴う遠心力のた
めに研磨布１２の外側に流出しようとするが、研磨剤保
持部材１９に当たって流れる方向を変えられ、研磨布１
２の上に溜められ、研磨布１２の上に広がった状態で半
導体基板１３の研磨に供給される。Next, as shown in FIG. 16 (a), an abrasive 15 is supplied from the abrasive supply pipe 16 to the vicinity of the center of the platen 11 on the polishing cloth 12, and the platen 11 and the substrate holding member are held. The heads 14 are respectively rotated. In this way, the abrasive 15
Flows toward the outside of the polishing pad 12, and the semiconductor substrate 13
And the polishing cloth 12. In this case, polishing cloth 1
The abrasive 15 on the surface 2 tends to flow out of the polishing cloth 12 due to the centrifugal force caused by the rotation of the platen 11, but the flow direction of the abrasive 15 against the abrasive holding member 19 is changed, so that the polishing cloth 1
2 and is supplied to the polishing of the semiconductor substrate 13 while being spread on the polishing cloth 12.

【００９９】半導体基板１３に対する研磨が終了する
と、図１６（ｂ）に示すように、上下動部材２２を定盤
１１に対して下方に移動させる。When the polishing of the semiconductor substrate 13 is completed, the vertically moving member 22 is moved downward with respect to the surface plate 11 as shown in FIG.

【０１００】次に、図１７（ａ），（ｂ）に示すよう
に、基板保持ヘッド１４のアーム１４ａを研磨布１２の
表面に沿って回転させて、基板保持ヘッド１４の一部分
ひいては半導体基板１３の一部分を研磨布１２から突出
させる。このようにすると、半導体基板１３と研磨布１
２との密着性が低減するので、半導体基板１３を研磨布
１２の上から容易に離脱させることができる。Next, as shown in FIGS. 17A and 17B, the arm 14a of the substrate holding head 14 is rotated along the surface of the polishing pad 12 so that a part of the substrate holding head 14 and the semiconductor substrate 13 are removed. Is made to protrude from the polishing cloth 12. Thus, the semiconductor substrate 13 and the polishing cloth 1
2, the semiconductor substrate 13 can be easily separated from the polishing pad 12.

【０１０１】図１８（ａ），（ｂ）は、基板保持ヘッド
１４を研磨布１２の表面に沿って移動させる他の構造を
示しており、基板保持ヘッド１４は、研磨布１２の表面
と平行な方向に水平移動する水平移動部材２３に保持さ
れている。FIGS. 18A and 18B show another structure for moving the substrate holding head 14 along the surface of the polishing pad 12, and the substrate holding head 14 is parallel to the surface of the polishing pad 12. FIG. Is held by a horizontal moving member 23 that moves horizontally in various directions.

【０１０２】半導体基板１３に対する研磨が終了する
と、図１６（ｂ）に示すように、上下動部材２２を定盤
１１に対して下方に移動させる後、図１８（ａ），
（ｂ）に示すように、水平移動部材２３を水平方向に移
動させて基板保持ヘッド１４を研磨布１２の表面に沿っ
て移動させる。これにより、基板保持ヘッド１４の一部
分ひいては半導体基板１３の一部分が研磨布１２から外
側に突出するので、半導体基板１３を研磨布１２の上か
ら容易に離脱させることができる。When the polishing of the semiconductor substrate 13 is completed, the vertical moving member 22 is moved downward with respect to the surface plate 11 as shown in FIG.
As shown in (b), the horizontal moving member 23 is moved in the horizontal direction to move the substrate holding head 14 along the surface of the polishing pad 12. As a result, a part of the substrate holding head 14 and a part of the semiconductor substrate 13 project outward from the polishing pad 12, so that the semiconductor substrate 13 can be easily detached from the polishing pad 12.

【０１０３】（第６の実施形態） 図１９は、本発明の第６の実施形態に係る研磨装置の概
略の平面構造を示している。(Sixth Embodiment) FIG. 19 shows a schematic plan structure of a polishing apparatus according to a sixth embodiment of the present invention.

【０１０４】図１９に示すように、第６の実施形態にお
いても、第１の実施形態と同様の定盤１１、研磨布１
２、基板保持ヘッド１４及び研磨剤供給管１６を備えて
おり、半導体基板１３は回転しながら定盤１１上の研磨
布１２に圧接され、研磨剤１５は研磨剤供給管１６から
所定量づつ研磨布１２上に供給される。尚、図１９にお
いては、定盤１１の研磨布保持部１１ａは図示を省略し
ている。As shown in FIG. 19, in the sixth embodiment, the surface plate 11 and the polishing pad 1 are the same as those in the first embodiment.
2, a substrate holding head 14 and an abrasive supply pipe 16 are provided. The semiconductor substrate 13 is pressed against the polishing cloth 12 on the surface plate 11 while rotating, and the abrasive 15 is polished by a predetermined amount from the abrasive supply pipe 16. It is supplied on the cloth 12. In FIG. 19, the polishing cloth holding portion 11a of the surface plate 11 is not shown.

【０１０５】第６の実施形態の特徴として、定盤１１の
研磨布保持部１１ａの外側には、研磨布１２の表面に対
して垂直な平面内で回動すると共に定盤１１とは別の回
転手段により回転するリング状の回動部材２４が設けら
れている。尚、回動部材２４を回動させる機構について
は図示を省略している。また、回動部材２４の上には、
第４の実施形態と同様の形状を有し、研磨剤１５を研磨
布１２の上に保持する研磨剤保持手段としての複数の帯
板状の研磨剤保持部材１９が研磨布１２の外周面に沿っ
て設けられており、該研磨剤保持部材１９は回動部材２
４の回動に伴って研磨布１２に対して回動する。研磨剤
保持部材１９は、研磨時にはその上部が研磨布１２の表
面よりも上になるように保持されている。As a feature of the sixth embodiment, on the outside of the polishing cloth holding portion 11a of the surface plate 11, it rotates in a plane perpendicular to the surface of the polishing A ring-shaped rotating member 24 that is rotated by the rotating means is provided. A mechanism for rotating the rotating member 24 is not shown. Also, on the rotating member 24,
A plurality of strip-shaped abrasive holding members 19 having the same shape as in the fourth embodiment and serving as abrasive holding means for holding the abrasive 15 on the polishing cloth 12 are provided on the outer peripheral surface of the polishing cloth 12. The abrasive holding member 19 is provided along the rotating member 2.
4 rotates with respect to the polishing pad 12. The polishing agent holding member 19 is held so that the upper portion thereof is higher than the surface of the polishing pad 12 during polishing.

【０１０６】また、第５の実施形態と同様に、基板保持
ヘッド１４のアーム１４ａは、研磨布１２の表面に沿っ
て回転運動するように設けられている。Further, similarly to the fifth embodiment, the arm 14 a of the substrate holding head 14 is provided so as to rotate along the surface of the polishing pad 12.

【０１０７】研磨剤保持部材１９の平面的な配置につい
ては、第４の実施形態と同様であって、研磨剤供給管１
６から研磨布１２上に供給され定盤１１の回転に伴う遠
心力により定盤１１の外側に向かう研磨剤１５は、研磨
剤保持部材１９に当たって流れる方向を変えられ、研磨
布１２の上に溜められるので、研磨布１２の上に萬遍な
く広がった状態で半導体基板１３の研磨に供給される。The planar arrangement of the abrasive holding member 19 is the same as that of the fourth embodiment.
The abrasive 15 supplied from 6 to the polishing cloth 12 and directed to the outside of the surface plate 11 by the centrifugal force caused by the rotation of the surface plate 11 changes its flowing direction upon hitting the abrasive holding member 19, and is stored on the polishing cloth 12. Accordingly, the semiconductor substrate 13 is supplied to the polishing of the semiconductor substrate 13 in a state of being spread evenly on the polishing cloth 12.

【０１０８】以下、第６の実施形態に係る研磨装置を用
いて行なう研磨方法について、図１９及び図２０を参照
しながら説明する。Hereinafter, a polishing method performed by using the polishing apparatus according to the sixth embodiment will be described with reference to FIGS. 19 and 20.

【０１０９】まず、半導体基板１３を研磨布１２上に圧
接した状態で、図１９に示すように、研磨剤供給管１６
から研磨剤１５を研磨布１２の上における定盤１１の中
心部付近に供給すると共に、定盤１１及び基板保持ヘッ
ド１４をそれぞれ回転させる。このようにすると、定盤
１１の回転に伴う遠心力のために研磨剤１５は研磨布１
２の外側に向かって流動し、半導体基板１３と研磨布１
２の界面に供給される。この場合、研磨布１２上の研磨
剤１５は、定盤１１の回転に伴う遠心力のために研磨布
１２の外側に流出しようとするが、研磨剤保持部材１９
に当たって流れる方向を変えられ、研磨布１２の上に溜
められ、研磨布１２の上に広がった状態で半導体基板１
３の研磨に供給される。First, with the semiconductor substrate 13 pressed against the polishing pad 12, as shown in FIG.
Is supplied to the vicinity of the center of the platen 11 on the polishing cloth 12, and the platen 11 and the substrate holding head 14 are respectively rotated. In this case, the abrasive 15 is removed from the polishing pad 1
2, the semiconductor substrate 13 and the polishing cloth 1
2 are supplied to the interface. In this case, the abrasive 15 on the polishing cloth 12 tends to flow out of the polishing cloth 12 due to centrifugal force accompanying the rotation of the platen 11, but the abrasive holding member 19
The direction of flow of the semiconductor substrate 1 is changed, and the semiconductor substrate 1 is stored on the polishing cloth 12 and spread on the polishing cloth 12.
3 is supplied to the polishing.

【０１１０】半導体基板１３に対する研磨が終了する
と、図２０に示すように、回動部材２４を研磨布１２の
表面に対して垂直な平面内で回動させた後、第５の実施
形態と同様に、基板保持ヘッド１４のアーム１４ａを研
磨布１２の表面に沿って回転させて、基板保持ヘッド１
４の一部分ひいては半導体基板１３の一部分を研磨布１
２から突出させる。このようにすると、半導体基板１３
と研磨布１２との密着性が低減するので、半導体基板１
３を研磨布１２の上から容易に離脱させることができ
る。When the polishing of the semiconductor substrate 13 is completed, as shown in FIG. 20, the rotating member 24 is rotated in a plane perpendicular to the surface of the polishing pad 12, and then the same as in the fifth embodiment. Next, the arm 14a of the substrate holding head 14 is rotated along the surface of the polishing cloth 12 so that the substrate holding head 1
4 and thus part of the semiconductor substrate 13
Protrude from 2. By doing so, the semiconductor substrate 13
Since the adhesion between the substrate and the polishing pad 12 is reduced, the semiconductor substrate 1
3 can be easily detached from the polishing cloth 12.

【０１１１】尚、第５の実施形態と同様、図１８
（ａ），（ｂ）に示すように、基板保持ヘッド１４を、
研磨布１２の表面と平行な方向に水平移動する水平移動
部材２３に保持させて、基板保持ヘッド１４の一部分ひ
いては半導体基板１３の一部分を研磨布１２から突出さ
せてもよい。As in the fifth embodiment, FIG.
As shown in (a) and (b), the substrate holding head 14 is
A part of the substrate holding head 14 and thus a part of the semiconductor substrate 13 may be made to protrude from the polishing cloth 12 by being held by a horizontal moving member 23 that moves horizontally in a direction parallel to the surface of the polishing cloth 12.

【０１１２】図２１は、本発明の各実施形態に係る研磨
装置を用いて研磨した場合と、従来の研磨装置を用いて
研磨した場合とにおける研磨剤の供給量と研磨レートと
の関係を示しており、従来は十分な研磨レートを維持す
るための研磨剤の供給量はＬ０だけ必要であったが、本
発明を用いることによりＬ０よりも少ないＬ１の供給量
で従来と同様の研磨レートを確保することができる。FIG. 21 shows the relationship between the amount of supplied abrasive and the polishing rate when polishing is performed using the polishing apparatus according to each embodiment of the present invention and when polishing is performed using a conventional polishing apparatus. Conventionally, the supply amount of the abrasive to maintain a sufficient polishing rate required only L0, but by using the present invention, the same polishing rate as the conventional one can be obtained with the supply amount of L1 smaller than L0. Can be secured.

【０１１３】[0113]

【発明の効果】第１の半導体基板の研磨装置によると、
定盤の回転に伴う遠心力により定盤の外側に流動する研
磨剤を研磨剤押圧手段によって定盤の中心側に押圧し
て、基板の研磨に再び利用できるので、研磨剤の消費量
を低減することができる。According to the first semiconductor substrate polishing apparatus,
The abrasive that flows to the outside of the surface plate due to the centrifugal force caused by the rotation of the surface plate is pressed toward the center of the surface plate by the abrasive pressing means and can be reused for polishing the substrate, reducing the consumption of abrasive. can do.

【０１１４】第１の半導体基板の研磨装置において、研
磨剤押圧手段が研磨剤を定盤の中心側に押圧する押圧板
であると、該押圧板によって、定盤の回転に伴う遠心力
により当接してくる研磨剤を定盤の中心側に押圧するこ
とができるので、研磨布上に押圧板を設けるという簡易
で低コストな方法によって、研磨剤の消費量を低減する
ことができる。In the first semiconductor substrate polishing apparatus, when the abrasive pressing means is a pressing plate that presses the abrasive toward the center of the platen, the pressing plate causes the centrifugal force generated by the rotation of the platen to cause the abrasive to contact the polishing plate. Since the contacting abrasive can be pressed toward the center of the platen, the consumption of the abrasive can be reduced by a simple and low-cost method of providing a pressing plate on the polishing cloth.

【０１１５】研磨剤を定盤の中心側に押圧する押圧板
が、定盤径方向と交差し且つ研磨時の定盤回転方向の前
方側が後方側よりも定盤径方向に対して内側に位置する
ように設けられていると、定盤の回転に伴って回転しな
がら外側に流動する研磨剤は、押圧板と共に研磨布に対
して相対回転しながら定盤の中心側に流動させられるた
め、研磨剤をスムーズに定盤の中心側に流動させること
ができるので、研磨剤を効率良く再利用することができ
る。A pressing plate for pressing the abrasive toward the center of the platen is positioned so that the pressure plate intersects the platen diameter direction and the front side in the platen rotation direction during polishing is more inside than the rear side in the platen diameter direction. When provided so that the abrasive flows outward while rotating with the rotation of the platen, because it flows toward the center of the platen while rotating relative to the polishing cloth with the pressing plate, Since the abrasive can flow smoothly toward the center of the platen, the abrasive can be reused efficiently.

【０１１６】この場合、押圧板が研磨時の定盤回転方向
と逆方向に回転可能に設けられていると、該押圧板を研
磨時の定盤回転方向と逆方向に回転すると、研磨布上の
洗浄液は押圧板の裏面によって定盤の外側に押圧される
ので、洗浄液を短時間で研磨布上から排出できる。In this case, if the pressing plate is provided so as to be rotatable in the direction opposite to the direction of rotation of the surface plate during polishing, when the pressing plate is rotated in the direction opposite to the direction of rotation of the surface plate during polishing, the pressing plate is placed on the polishing cloth. Since the cleaning liquid is pressed to the outside of the platen by the back surface of the pressing plate, the cleaning liquid can be discharged from the polishing cloth in a short time.

【０１１７】研磨剤を定盤の中心側に押圧する押圧板
が、該押圧板の下面と研磨布の上面との間に、研磨布上
に供給された研磨剤の層の厚さ以下の間隔を持つように
設けられていると、押圧板は研磨剤と当接して研磨剤を
定盤の中心側に押圧することができると共に、研磨布と
接触しないので、押圧板と研磨布との摩擦に伴う滓が発
生する事態を回避できる。A pressing plate for pressing the abrasive toward the center of the platen is provided with a gap between the lower surface of the pressing plate and the upper surface of the polishing cloth which is equal to or less than the thickness of the abrasive layer supplied on the polishing cloth. When the pressing plate is provided so that the pressing plate can abut against the abrasive and press the abrasive toward the center of the platen, and does not contact the polishing cloth, the friction between the pressing plate and the polishing cloth Can be avoided.

【０１１８】研磨剤を定盤の中心側に押圧する押圧板
が、柔軟性を持つ材料よりなり、該押圧板の下面が研磨
布の上面に接するように設けられていると、押圧板の下
部は研磨布の上面に沿って変形し、押圧板の下面と研磨
布の上面との間には隙間ができないため、研磨剤は効率
良く定盤の中心側に押圧されるので、研磨剤を一層効率
良く再利用することができる。When the pressing plate for pressing the abrasive toward the center of the platen is made of a flexible material and the lower surface of the pressing plate is provided so as to be in contact with the upper surface of the polishing pad, the lower portion of the pressing plate Is deformed along the upper surface of the polishing cloth, and there is no gap between the lower surface of the pressing plate and the upper surface of the polishing cloth.The polishing agent is efficiently pressed toward the center of the platen. It can be reused efficiently.

【０１１９】研磨剤を定盤の中心側に押圧する押圧板
が、定盤の周縁部に沿って互いに隙間をおいて複数個設
けられていると、研磨布上から流れ出る研磨剤の量が一
層低減し、研磨剤を一層効率良く再利用することができ
ると共に、研磨布上の洗浄剤は押圧板同士の間の隙間か
ら排出される。When a plurality of pressing plates for pressing the abrasive toward the center of the surface plate are provided along the peripheral edge of the surface plate with a gap therebetween, the amount of the abrasive flowing out from the polishing cloth is further increased. As a result, the abrasive can be reused more efficiently, and the cleaning agent on the abrasive cloth is discharged from the gap between the pressing plates.

【０１２０】第１の半導体基板の研磨装置において、研
磨剤押圧手段が、研磨剤を定盤の中心側に押圧する気体
を噴出する気体噴出手段であると、気体噴出手段から噴
出する気体の流量や圧力を調節することにより、研磨剤
の量や粘度等の流動特性に応じて適切に研磨剤を定盤の
中心側に押圧することができると共に、気体の噴射を停
止することにより、研磨布上の洗浄液を支障なく排出す
ることができる。In the first semiconductor substrate polishing apparatus, when the abrasive pressing means is a gas blowing means for blowing a gas for pressing the abrasive toward the center of the platen, the flow rate of the gas blown from the gas blowing means is reduced. By adjusting the pressure and the pressure, the polishing agent can be appropriately pressed toward the center of the platen according to the flow characteristics such as the amount and viscosity of the polishing agent, and by stopping the gas injection, the polishing cloth The above cleaning liquid can be discharged without any trouble.

【０１２１】気体噴出手段が、定盤の周縁部に互いに隙
間をおいて複数個設けられていると、研磨布上から流れ
出る研磨剤の量が一層低減し、研磨剤を一層効率良く再
利用することができる。If a plurality of gas jetting means are provided at the periphery of the surface plate with a gap therebetween, the amount of the abrasive flowing out from the polishing pad is further reduced, and the abrasive is reused more efficiently. be able to.

【０１２２】第１の半導体基板の研磨装置において、研
磨剤押圧手段が、研磨布と接する状態又は僅かな隙間を
おいた状態で設けられ定盤と逆方向に回転する回転部材
であると、定盤の回転に伴って回転しながら外側に流動
する研磨剤は、研磨布と接する状態又は僅かな隙間をお
いた状態で定盤と逆方向に回転する回転部材の外周面に
当接すると、該外周面に沿って定盤の中心側に流動させ
られるため、研磨剤をスムーズに定盤の中心側に流動さ
せることができるので、研磨剤を効率良く再利用するこ
とができる。In the first semiconductor substrate polishing apparatus, it is determined that the abrasive pressing means is a rotating member which is provided in contact with the polishing cloth or with a slight gap therebetween and rotates in the opposite direction to the surface plate. The abrasive that flows outward while rotating with the rotation of the plate, when in contact with the polishing cloth or with a slight gap in contact with the outer peripheral surface of a rotating member that rotates in the opposite direction to the platen, Since the abrasive is caused to flow toward the center of the surface plate along the outer peripheral surface, the abrasive can be smoothly flowed to the center of the surface plate, so that the abrasive can be reused efficiently.

【０１２３】回転部材の外周面に凸部が設けられている
と、定盤の回転に伴って外側に流動する研磨剤は回転部
材の外周面に設けられた凸部により定盤の中心側に流動
させられるため、研磨布上から流れ出る研磨剤の量を一
層低減できるので、研磨剤を一層効率良く再利用するこ
とができる。When the convex portion is provided on the outer peripheral surface of the rotating member, the abrasive flowing outward with the rotation of the platen is moved toward the center of the surface plate by the convex portion provided on the outer peripheral surface of the rotating member. Since it is made to flow, the amount of the abrasive flowing out from the polishing pad can be further reduced, and the abrasive can be reused more efficiently.

【０１２４】第２の半導体基板の研磨装置によると、定
盤の回転に伴う遠心力により定盤の外側に流動する研磨
剤を研磨剤保持手段によって研磨布上に保持して、基板
の研磨に再び利用できるため、簡易で低コストな方法に
よって、研磨剤の消費量を低減することができる。According to the second semiconductor substrate polishing apparatus, the abrasive flowing to the outside of the surface plate due to the centrifugal force caused by the rotation of the surface plate is held on the polishing cloth by the abrasive holding means, and the substrate is polished. Since it can be reused, the consumption of the abrasive can be reduced by a simple and low-cost method.

【０１２５】第２の半導体基板の研磨装置において、研
磨剤保持部材が定盤の周縁部に互いに隙間をおいて複数
個設けられていると、研磨布上から流れ出る研磨剤の量
が一層低減し、研磨剤を一層効率良く再利用することが
できると共に、研磨布上の洗浄剤は研磨剤保持部材同士
の間の隙間から排出される。In the second semiconductor substrate polishing apparatus, when a plurality of abrasive holding members are provided at the periphery of the surface plate with a gap therebetween, the amount of the abrasive flowing out from the polishing cloth is further reduced. The abrasive can be reused more efficiently, and the cleaning agent on the polishing pad is discharged from the gap between the abrasive holding members.

【０１２６】複数個の研磨剤保持部材のうち隣り合う研
磨剤保持部材が、定盤径方向から見て互いに重なってい
ると、研磨布上から流れ出る研磨剤の量がより一層低減
し、研磨剤をより一層効率良く再利用することができ
る。When the adjacent abrasive holding members among the plurality of abrasive holding members overlap each other when viewed from the platen diameter direction, the amount of the abrasive flowing out from the polishing cloth is further reduced, and Can be reused more efficiently.

【０１２７】第２の半導体基板の研磨装置において、研
磨剤保持部材が研磨布に対して上方、下方又は外方に移
動可能に設けられ、基板保持部材が半導体基板を保持し
た状態で研磨布と平行な平面内で移動可能に設けられて
いると、研磨剤保持部材を研磨布に対して上方、下方又
は外方に移動した後、基板保持部材を研磨布と平行な平
面内で移動させて半導体基板の少なくとも一部分を研磨
布から突出させると、半導体基板と研磨布との密着力が
低減するので、半導体基板を研磨布の上から容易に離脱
させることができる。In the second semiconductor substrate polishing apparatus, a polishing agent holding member is provided so as to be movable upward, downward or outward with respect to the polishing cloth, and the polishing pad is held in a state where the substrate holding member holds the semiconductor substrate. When provided so as to be movable in a parallel plane, after moving the abrasive holding member upward, downward or outward with respect to the polishing cloth, the substrate holding member is moved in a plane parallel to the polishing cloth. When at least a portion of the semiconductor substrate is projected from the polishing cloth, the adhesive force between the semiconductor substrate and the polishing cloth is reduced, so that the semiconductor substrate can be easily separated from the polishing cloth.

【０１２８】第１の半導体基板の研磨方法によると、定
盤の回転に伴う遠心力により定盤の外側に流動する研磨
剤は、定盤の中心側に押圧され、基板の研磨に再び利用
されるので、研磨剤の消費量を低減することができる。According to the first method for polishing a semiconductor substrate, the abrasive flowing to the outside of the surface plate due to the centrifugal force accompanying the rotation of the surface plate is pressed toward the center of the surface plate and reused for polishing the substrate. Therefore, the consumption of the abrasive can be reduced.

【０１２９】第１の半導体基板の研磨方法において、研
磨剤押圧工程が、研磨布の上に保持された押圧板によ
り、研磨布上の研磨剤を定盤の中心側に押圧する工程を
含むと、定盤の回転に伴う遠心力により定盤の外側に流
動する研磨剤は、定盤の中心側に押圧され、半導体基板
の研磨に再び利用されるので、研磨剤の消費量を低減す
ることができる。In the first method for polishing a semiconductor substrate, the abrasive pressing step may include a step of pressing the abrasive on the polishing cloth toward the center of the platen by a pressing plate held on the polishing cloth. Since the abrasive flowing to the outside of the surface plate due to the centrifugal force caused by the rotation of the surface plate is pressed toward the center of the surface plate and reused for polishing the semiconductor substrate, the consumption of the abrasive can be reduced. Can be.

【０１３０】第１の半導体基板の研磨方法において、研
磨剤押圧工程が、定盤径方向と交差し且つ研磨時の定盤
回転方向の前方側が後方側よりも定盤径方向の内側に位
置するように設けられた押圧板により、研磨布上の研磨
剤を定盤の中心側に押圧する工程を含むと、定盤の回転
に伴って回転しながら外側に流動する研磨剤は、押圧板
により回転しながら定盤の中心側に流動させられ、研磨
剤をスムーズに定盤の中心側に導くことができるので、
研磨剤を効率良く再利用することができる。In the first method for polishing a semiconductor substrate, the abrasive pressing step intersects the surface plate radial direction, and the front side in the direction of rotation of the surface plate during polishing is located inside the rear surface side in the radial direction of the surface plate. Including a step of pressing the abrasive on the polishing cloth to the center side of the platen by the pressing plate provided as described above, the abrasive flowing outward while rotating with the rotation of the platen, the pressing plate It is made to flow toward the center of the surface plate while rotating, and the abrasive can be smoothly guided to the center side of the surface plate,
The abrasive can be efficiently reused.

【０１３１】第１の半導体基板の研磨方法において、研
磨剤押圧工程が、研磨布の上面との間に研磨布上に供給
された研磨剤の層の厚さ以下の間隔を持つように設けら
れた押圧板により、研磨布上の研磨剤を定盤の中心側に
押圧する工程を含むと、押圧板は当接する研磨剤を定盤
の中心側に押圧することができると共に、押圧板と研磨
布とは接触しないので、押圧板と研磨布との摩擦に伴う
滓が発生する事態を回避できる。In the first method for polishing a semiconductor substrate, the abrasive pressing step is provided so as to have a gap between the upper surface of the abrasive cloth and the thickness of the abrasive layer supplied onto the abrasive cloth. The pressing plate includes a step of pressing the abrasive on the polishing cloth toward the center of the platen with the pressing plate, so that the pressing plate can press the abutting abrasive toward the center of the platen, Since there is no contact with the cloth, it is possible to avoid a situation in which slag is generated due to friction between the pressing plate and the polishing cloth.

【０１３２】第１の半導体基板の研磨方法において、研
磨剤押圧工程が、柔軟性を持つ材料よりなり、下面が研
磨布の上面に接するように設けられた押圧板により、研
磨布上の研磨剤を定盤の中心側に押圧する工程を含む
と、押圧板の下部が研磨布の上面に沿って変形し、押圧
板の下面と研磨布の上面との間には隙間ができないた
め、研磨剤は効率良く定盤の中心側に押圧されるので、
研磨剤を一層効率良く再利用することができる。In the first method for polishing a semiconductor substrate, the step of pressing the abrasive is performed by a pressing plate made of a material having flexibility, the lower surface being in contact with the upper surface of the polishing cloth. The step of pressing the pressing plate toward the center of the platen, the lower portion of the pressing plate is deformed along the upper surface of the polishing pad, and there is no gap between the lower surface of the pressing plate and the upper surface of the polishing pad. Is efficiently pressed toward the center of the platen,
The abrasive can be reused more efficiently.

【０１３３】第１の半導体基板の研磨方法において、研
磨研磨剤押圧工程が押圧板により研磨布上の研磨剤を定
盤の中心側に押圧する工程を含み、定盤を研磨時の定盤
回転方向と逆方向に回転することにより、研磨布の上に
供給された洗浄液を排出する洗浄液排出工程を備えてい
ると、定盤を研磨時の定盤回転方向と逆方向に回転する
と、押圧板は定盤と相対的に逆方向に回転するため、研
磨布上の洗浄液は押圧板の裏面によって定盤の外側に押
圧されるので、洗浄液を短時間で研磨布上から排出する
ことができる。In the first method for polishing a semiconductor substrate, the step of pressing the polishing slurry includes the step of pressing the polishing slurry on the polishing cloth toward the center of the platen with a pressing plate, and rotating the platen during polishing. A cleaning liquid discharging step of discharging the cleaning liquid supplied onto the polishing cloth by rotating in the opposite direction to the direction, the platen is rotated in the direction opposite to the rotation direction of the platen during polishing, and the pressing plate is rotated. The cleaning liquid on the polishing cloth is pressed to the outside of the platen by the back surface of the pressing plate since the cleaning liquid rotates in the opposite direction relative to the platen, so that the cleaning liquid can be discharged from the polishing cloth in a short time.

【０１３４】第１の半導体基板の研磨方法において、研
磨剤押圧工程が、気体を定盤の中心側に向かって噴出し
て、研磨布上の研磨剤を定盤の中心側に押圧する工程を
含むと、定盤の中心側に向かって噴出する気体の流量や
圧力を調節することにより、研磨剤の量や粘度等の流動
特性に応じて適切に研磨剤を定盤の中心側に押圧するこ
とができると共に、気体の噴射を停止することにより、
研磨布上の洗浄液を支障なく排出することができる。In the first method for polishing a semiconductor substrate, the abrasive pressing step includes the step of blowing gas toward the center of the platen to press the abrasive on the polishing cloth toward the center of the platen. Including, by adjusting the flow rate and pressure of the gas ejected toward the center of the surface plate, the abrasive is appropriately pressed toward the center of the surface plate according to the flow characteristics such as the amount and viscosity of the abrasive. And by stopping the injection of gas,
The cleaning liquid on the polishing cloth can be discharged without any trouble.

【０１３５】第１の半導体基板の研磨方法において、研
磨剤押圧工程が、研磨布の上に該研磨布と接する状態又
は僅かな隙間をおいた状態で設けられ定盤と逆方向に回
転する回転部材により、研磨布上の研磨剤を定盤の中心
側に押圧する工程を含むと、定盤の回転に伴って回転し
ながら外側に流動する研磨剤は、研磨布と接する状態又
は僅かな隙間をおいた状態で定盤と逆方向に回転する回
転部材の外周面に当接して、該外周面に沿って定盤の中
心側に流動させられるため、研磨剤をスムーズに定盤の
中心側に流動させることができるので、研磨剤を効率良
く再利用することができる。In the first method for polishing a semiconductor substrate, the polishing step of pressing the abrasive is provided such that the polishing step is provided on the polishing pad in a state of contact with the polishing pad or with a slight gap therebetween, and rotates in a direction opposite to the surface plate. By including a step of pressing the abrasive on the polishing cloth toward the center of the platen by the member, the abrasive flowing outward while rotating with the rotation of the platen is in a state of contact with the polishing cloth or a slight gap. Abuts against the outer peripheral surface of the rotating member that rotates in the opposite direction to the surface plate, and flows along the outer peripheral surface toward the center of the surface plate, so that the abrasive can smoothly flow toward the center of the surface plate. The abrasive can be efficiently reused.

【０１３６】第２の半導体基板の研磨方法によると、定
盤の回転に伴って回転しながら外側に流動する研磨剤
は、研磨剤保持部材により研磨布の上に保持されるた
め、研磨剤を効率良く再利用することができるので、簡
易で低コストな方法によって、研磨剤の消費量を低減す
ることができる。According to the second method for polishing a semiconductor substrate, the abrasive flowing outward while rotating with the rotation of the platen is held on the polishing cloth by the abrasive holding member, so that the abrasive is removed. Since it can be efficiently reused, the consumption of the abrasive can be reduced by a simple and low-cost method.

【０１３７】第２の半導体基板の研磨方法において、研
磨剤保持工程が、定盤の周縁部に互いに隙間をおいて設
けられた複数個の研磨剤保持部材により、研磨布上の研
磨剤を研磨布上に保持する工程を含むと、研磨布上から
流れ出る研磨剤の量が一層低減し、研磨剤を一層効率良
く再利用することができると共に、研磨布上の洗浄剤は
研磨剤保持部材同士の間の隙間から排出される。In the polishing method of the second semiconductor substrate, the polishing agent holding step includes polishing the polishing agent on the polishing cloth by a plurality of polishing agent holding members provided at the periphery of the surface plate with a gap therebetween. When the step of holding on the cloth is included, the amount of the abrasive flowing out from the polishing cloth is further reduced, and the abrasive can be reused more efficiently. Is discharged from the gap between

【０１３８】第２の半導体基板の研磨方法において、研
磨剤保持工程が、複数個の研磨剤保持部材のうち互いに
隣り合う研磨剤保持部材が定盤径方向から見て互いに重
なっている複数個の研磨剤保持部材により、研磨布上の
研磨剤を研磨布上に保持する工程を含むと、研磨布上か
ら流れ出る研磨剤の量がより一層低減し、研磨剤をより
一層効率良く再利用することができる。In the second method for polishing a semiconductor substrate, the abrasive holding step includes the step of holding a plurality of abrasive holding members which are adjacent to each other among the plurality of abrasive holding members when viewed from the platen diameter direction. By including the step of holding the abrasive on the polishing cloth on the polishing cloth by the abrasive holding member, the amount of the abrasive flowing out of the polishing cloth is further reduced, and the abrasive can be reused more efficiently. Can be.

【０１３９】第２の半導体基板の研磨方法が、定盤を研
磨時の定盤回転方向と逆方向に回転することにより、研
磨布の上に供給された洗浄液を排出する洗浄液排出工程
を備えていると、定盤を研磨時の定盤回転方向と逆方向
に回転すると、研磨剤保持部材は定盤と相対的に逆方向
に回転するため、研磨布上の洗浄液は研磨剤保持部材の
裏面によって定盤の外側に押圧されるので、洗浄液を短
時間で研磨布上から排出することができる。The second method for polishing a semiconductor substrate includes a cleaning liquid discharging step of discharging the cleaning liquid supplied onto the polishing pad by rotating the platen in a direction opposite to the rotation direction of the platen during polishing. When the surface plate is rotated in the direction opposite to the direction of rotation of the surface plate during polishing, the abrasive holding member rotates in the opposite direction relative to the surface plate. As a result, the cleaning liquid can be discharged from the polishing pad in a short time.

【０１４０】第２の半導体基板の研磨方法が、研磨剤保
持部材を研磨布に対して上方、下方又は外方に移動する
研磨剤保持部材移動工程と、半導体基板を研磨布と平行
な平面内で移動させることにより、半導体基板の少なく
とも一部分を研磨布から突出させる基板移動工程とを備
えていると、研磨剤保持部材を研磨布に対して上方、下
方又は外方に移動した後、半導体基板の少なくとも一部
分を研磨布から突出させるため、半導体基板と研磨布と
の密着力が低減するので、半導体基板を研磨布の上から
容易に離脱させることができる。The second method of polishing a semiconductor substrate includes a step of moving the abrasive holding member upward, downward or outward with respect to the polishing cloth, and a step of moving the semiconductor substrate in a plane parallel to the polishing cloth. Moving the abrasive holding member upward, downward or outward with respect to the polishing cloth, and then moving the semiconductor substrate. Is projected from the polishing cloth, so that the adhesive force between the semiconductor substrate and the polishing cloth is reduced, so that the semiconductor substrate can be easily separated from the polishing cloth.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施形態に係る半導体基板の研
磨装置の斜視図である。FIG. 1 is a perspective view of a semiconductor substrate polishing apparatus according to a first embodiment of the present invention.

【図２】本発明の第２の実施形態に係る半導体基板の研
磨装置の斜視図である。FIG. 2 is a perspective view of a semiconductor substrate polishing apparatus according to a second embodiment of the present invention.

【図３】前記第２の実施形態に係る半導体基板の研磨装
置の平面図である。FIG. 3 is a plan view of a semiconductor substrate polishing apparatus according to the second embodiment.

【図４】前記第２の実施形態に係る半導体基板の研磨装
置における押圧板の変形例を示す平面図である。FIG. 4 is a plan view showing a modification of the pressing plate in the semiconductor substrate polishing apparatus according to the second embodiment.

【図５】（ａ）〜（ｄ）は前記第２の実施形態に係る半
導体基板の研磨装置における押圧板の各変形例を示す平
面図である。FIGS. 5A to 5D are plan views showing modifications of a pressing plate in the semiconductor substrate polishing apparatus according to the second embodiment.

【図６】（ａ）〜（ｄ）は前記第２の実施形態に係る半
導体基板の研磨装置における押圧板の各変形例を示す断
面図である。FIGS. 6A to 6D are cross-sectional views showing modifications of a pressing plate in the semiconductor substrate polishing apparatus according to the second embodiment.

【図７】（ａ）〜（ｃ）は前記第２の実施形態に係る半
導体基板の研磨装置を用いる研磨方法を説明する斜視図
である。FIGS. 7A to 7C are perspective views illustrating a polishing method using a semiconductor substrate polishing apparatus according to the second embodiment.

【図８】本発明の第３の実施形態に係る半導体基板の研
磨装置の斜視図である。FIG. 8 is a perspective view of a semiconductor substrate polishing apparatus according to a third embodiment of the present invention.

【図９】前記第３の実施形態に係る半導体基板の研磨装
置を用いて行なう研磨状態を示す平面図である。FIG. 9 is a plan view showing a polishing state performed by using the semiconductor substrate polishing apparatus according to the third embodiment.

【図１０】前記第３の実施形態に係る半導体基板の研磨
装置における回転部材の変形例を示す平面図である。FIG. 10 is a plan view showing a modification of a rotating member in the semiconductor substrate polishing apparatus according to the third embodiment.

【図１１】本発明の第４の実施形態に係る半導体基板の
研磨装置の斜視図である。FIG. 11 is a perspective view of a semiconductor substrate polishing apparatus according to a fourth embodiment of the present invention.

【図１２】前記第４の実施形態に係る半導体基板の研磨
装置の平面図である。FIG. 12 is a plan view of a semiconductor substrate polishing apparatus according to the fourth embodiment.

【図１３】（ａ）〜（ｄ）は前記第４の実施形態に係る
半導体基板の研磨装置における押圧板の各変形例を示す
平面図である。FIGS. 13A to 13D are plan views showing modifications of the pressing plate in the semiconductor substrate polishing apparatus according to the fourth embodiment.

【図１４】（ａ），（ｂ）は前記第４の実施形態に係る
半導体基板の研磨装置を用いる研磨方法を説明する斜視
図である。FIGS. 14A and 14B are perspective views illustrating a polishing method using a semiconductor substrate polishing apparatus according to the fourth embodiment.

【図１５】（ａ），（ｂ）は前記第４の実施形態に係る
半導体基板の研磨装置を用いる研磨方法を説明する斜視
図である。FIGS. 15A and 15B are perspective views illustrating a polishing method using a semiconductor substrate polishing apparatus according to the fourth embodiment.

【図１６】（ａ）は本発明の第５の実施形態に係る半導
体基板の研磨装置の斜視図であって、（ｂ）は前記第５
の実施形態に係る半導体基板の研磨装置を用いて行なう
研磨方法を示す斜視図である。FIG. 16A is a perspective view of a semiconductor substrate polishing apparatus according to a fifth embodiment of the present invention, and FIG.
FIG. 5 is a perspective view showing a polishing method performed using the semiconductor substrate polishing apparatus according to the embodiment.

【図１７】（ａ），（ｂ）は前記第５の実施形態に係る
半導体基板の研磨装置を用いて行なう研磨方法を示す平
面図である。FIGS. 17A and 17B are plan views showing a polishing method performed by using the semiconductor substrate polishing apparatus according to the fifth embodiment.

【図１８】（ａ），（ｂ）は前記第５の実施形態に係る
半導体基板の研磨装置の変形例を用いて行なう研磨方法
を示す平面図である。FIGS. 18A and 18B are plan views showing a polishing method performed using a modification of the semiconductor substrate polishing apparatus according to the fifth embodiment.

【図１９】本発明の第６の実施形態に係る半導体基板の
研磨装置の斜視図である。FIG. 19 is a perspective view of a semiconductor substrate polishing apparatus according to a sixth embodiment of the present invention.

【図２０】前記第６の実施形態に係る半導体基板の研磨
装置を用いて行なう研磨方法を示す斜視図である。FIG. 20 is a perspective view showing a polishing method performed by using the semiconductor substrate polishing apparatus according to the sixth embodiment.

【図２１】本発明及び従来の半導体基板の研磨装置を用
いて行なう研磨剤の供給量と研磨レートとの関係を示す
図である。FIG. 21 is a diagram showing a relationship between a polishing agent supply amount and a polishing rate performed by using the present invention and a conventional semiconductor substrate polishing apparatus.

【図２２】従来の半導体基板の研磨装置の概略斜視図で
ある。FIG. 22 is a schematic perspective view of a conventional semiconductor substrate polishing apparatus.

【符号の説明】[Explanation of symbols]

１１ 定盤 １１ａ 研磨布保持部 １１ｂ 回転軸 １２ 研磨布 １３ 基板 １４ 基板保持ヘッド １４ａ アーム １５ 研磨剤 １６ 研磨剤供給管 １７ 圧縮空気供給管 １７ａ 噴出口 １８ 研磨剤押圧部材 １９ 研磨剤保持部材 ２０ 洗浄液 ２１ 回転部材 ２１ａ 突出部 ２２ 上下動部材 ２３ 水平移動部材 ２４ 回動部材 DESCRIPTION OF SYMBOLS 11 Surface plate 11a Polishing cloth holding part 11b Rotating shaft 12 Polishing cloth 13 Substrate 14 Substrate holding head 14a Arm 15 Abrasive 16 Abrasive supply pipe 17 Compressed air supply pipe 17a Spout port 18 Abrasive pressing member 19 Abrasive holding member 20 Cleaning liquid DESCRIPTION OF SYMBOLS 21 Rotating member 21a Projecting part 22 Vertical moving member 23 Horizontal moving member 24 Rotating member

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.⁶，ＤＢ名) B24B 37/00 H01L 21/304 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁶ , DB name) B24B 37/00 H01L 21/304

Claims (17)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 平坦面を有し該平坦面と垂直な軸を中心
に回転する定盤と、該定盤の前記平坦面上に載置された
研磨布と、研磨剤を前記研磨布の上に供給する研磨剤供
給手段と、半導体基板を保持して前記研磨布に対して押
圧する基板保持手段と、前記研磨布上に供給され前記定
盤の回転に伴う遠心力により前記定盤の外側に流動する
研磨剤を前記定盤の中心側に押圧する研磨剤押圧手段と
を備え、 前記研磨剤押圧手段は、前記研磨布の上に該研磨布の周
縁部に沿って互いに隙間をおいて設けられており、前記
定盤の回転に伴う遠心力により当接してくる研磨剤を前
記定盤の中心側に押圧する複数の押圧板よりなることを
特徴とする半導体基板の研磨装置。A platen having a flat surface and rotating about an axis perpendicular to the flat surface; a polishing cloth placed on the flat surface of the platen; Abrasive supply means for supplying the polishing pad, substrate holding means for holding a semiconductor substrate and pressing against the polishing cloth, and a centrifugal force supplied on the polishing cloth and rotated by the rotation of the polishing pad. Abrasive pressing means for pressing the abrasive flowing outward to the center of the platen, wherein the abrasive pressing means forms a gap on the polishing cloth along the peripheral edge of the polishing cloth. A semiconductor substrate polishing apparatus, comprising: a plurality of pressing plates for pressing an abrasive, which comes into contact with centrifugal force accompanying rotation of the surface plate, toward the center of the surface plate. 【請求項２】 前記複数の押圧板は、定盤径方向と交差
し且つ研磨時の定盤回転方向の前方側が後方側よりも定
盤径方向に対して内側に位置するように設けられている
ことを特徴とする請求項１に記載の半導体基板の研磨装
置。2. The plurality of pressing plates are provided so as to intersect with the radial direction of the surface plate and that the front side in the direction of rotation of the surface plate at the time of polishing is positioned more inside than the rear side in the radial direction of the surface plate. The polishing apparatus for a semiconductor substrate according to claim 1, wherein: 【請求項３】 平坦面を有し該平坦面と垂直な軸を中心
に回転する定盤と、該定盤の前記平坦面上に載置された
研磨布と、研磨剤を前記研磨布の上に供給する研磨剤供
給手段と、半導体基板を保持して前記研磨布に対して押
圧する基板保持手段と、前記研磨布上に供給され前記定
盤の回転に伴う遠心力により前記定盤の外側に流動する
研磨剤を前記定盤の中心側に押圧する研磨剤押圧手段と
を備え、 前記研磨剤押圧手段は、前記研磨布上の研磨剤を前記定
盤の中心側に押圧する気体を噴出する気体噴出手段より
なることを特徴とする半導体基板の研磨装置。3. A surface plate having a flat surface and rotating about an axis perpendicular to the flat surface, a polishing cloth placed on the flat surface of the surface plate, and a polishing agent for polishing the polishing cloth. Abrasive supply means for supplying the polishing pad, substrate holding means for holding a semiconductor substrate and pressing against the polishing cloth, and a centrifugal force supplied on the polishing cloth and rotated by the rotation of the polishing pad. Abrasive pressing means for pressing the abrasive flowing outward to the center side of the platen, wherein the abrasive pressing means presses the abrasive on the polishing cloth toward the center side of the platen. An apparatus for polishing a semiconductor substrate, comprising a gas blowing means for blowing gas. 【請求項４】 前記気体噴出手段は、前記定盤の周縁部
に沿って複数箇所設けられていることを特徴とする請求
項３に記載の半導体基板の研磨装置。4. The apparatus for polishing a semiconductor substrate according to claim 3, wherein said gas ejection means is provided at a plurality of positions along a peripheral portion of said surface plate. 【請求項５】 平坦面を有し該平坦面と垂直な軸を中心
に回転する定盤と、該定盤の前記平坦面上に載置された
研磨布と、研磨剤を前記研磨布の上に供給する研磨剤供
給手段と、半導体基板を保持して前記研磨布に対して押
圧する基板保持手段と、前記研磨布上に供給され前記定
盤の回転に伴う遠心力により前記定盤の外側に流動する
研磨剤を前記定盤の中心側に押圧する研磨剤押圧手段と
を備え、 前記研磨剤押圧手段は、前記研磨布の上に該研磨布と接
する状態又は僅かな隙間をおいた状態で設けられ、前記
定盤と逆方向に回転する回転部材であることを特徴とす
る半導体基板の研磨装置。5. A surface plate having a flat surface and rotating about an axis perpendicular to the flat surface, a polishing cloth placed on the flat surface of the surface plate, and a polishing agent for polishing the polishing cloth. Abrasive supply means for supplying the polishing pad, substrate holding means for holding a semiconductor substrate and pressing against the polishing cloth, and a centrifugal force supplied on the polishing cloth and rotated by the rotation of the polishing pad. Abrasive pressing means for pressing the abrasive flowing outward to the center side of the platen, wherein the abrasive pressing means is in contact with the polishing cloth or has a slight gap on the polishing cloth. An apparatus for polishing a semiconductor substrate, comprising: a rotating member provided in a state and rotating in a direction opposite to the surface plate. 【請求項６】 前記回転部材の外周面には凸部が設けら
れていることを特徴とする請求項５に記載の半導体基板
の研磨装置。6. The semiconductor substrate polishing apparatus according to claim 5, wherein a convex portion is provided on an outer peripheral surface of said rotating member. 【請求項７】 平坦面を有し該平坦面と垂直な軸を中心
に回転する定盤と、該定盤の前記平坦面上に載置された
研磨布と、研磨剤を前記研磨布の上に供給する研磨剤供
給手段と、半導体基板を保持して前記研磨布に対して押
圧する基板保持手段と、前記定盤の周縁部に、研磨時の
定盤回転方向の前方側が後方側よりも定盤径方向の内側
に位置するように設けられ、前記研磨布上に供給され前
記定盤の回転に伴う遠心力により前記定盤の外側に流動
する研磨剤を前記研磨布上に保持する研磨剤保持部材と
を備えていることを特徴とする半導体基板の研磨装置。7. A surface plate having a flat surface and rotating about an axis perpendicular to the flat surface, a polishing cloth placed on the flat surface of the surface plate, and an abrasive for polishing the polishing cloth. Abrasive supply means to be supplied above, substrate holding means to hold the semiconductor substrate and press against the polishing cloth, and to the periphery of the surface plate, the front side in the direction of rotation of the surface plate during polishing is from the rear side. Is also provided so as to be located on the inner side in the radial direction of the surface plate, and holds on the polishing cloth an abrasive supplied onto the polishing cloth and flowing to the outside of the surface plate by centrifugal force accompanying rotation of the surface plate. An apparatus for polishing a semiconductor substrate, comprising: an abrasive holding member. 【請求項８】 前記研磨剤保持部材は、前記定盤の周縁
部に互いに隙間をおいて複数個設けられていることを特
徴とする請求項７に記載の半導体基板の研磨装置。8. The semiconductor substrate polishing apparatus according to claim 7, wherein a plurality of the abrasive holding members are provided at a peripheral portion of the surface plate with a gap therebetween. 【請求項９】 前記複数個の研磨剤保持部材のうち隣り
合う研磨剤保持部材は、定盤径方向から見て互いに重な
っていることを特徴とする請求項８に記載の半導体基板
の研磨装置。9. The semiconductor substrate polishing apparatus according to claim 8, wherein adjacent abrasive holding members among the plurality of abrasive holding members overlap each other when viewed from a platen diameter direction. . 【請求項１０】 前記研磨剤保持部材は、前記研磨布に
対して上方、下方又は外方に移動可能に設けられてお
り、前記基板保持部材は前記半導体基板を保持した状態
で前記研磨布と平行な平面内で移動可能に設けられてい
ることを特徴とする請求項７に記載の半導体基板の研磨
装置。10. The polishing agent holding member is provided so as to be movable upward, downward, or outward with respect to the polishing cloth, and the substrate holding member holds the semiconductor substrate in contact with the polishing cloth. The polishing apparatus for a semiconductor substrate according to claim 7, wherein the apparatus is movably provided in a parallel plane. 【請求項１１】 平坦面を有し該平坦面と垂直な軸を中
心に回転する定盤の前記平坦面上に載置された研磨布の
上に研磨剤を供給すると共に、半導体基板を前記研磨布
に対して押圧しながら、前記半導体基板を研磨する半導
体基板の研磨方法であって、前記研磨布上に供給され前
記定盤の回転に伴う遠心力により前記定盤の外側に流動
する研磨剤を前記定盤の中心側に押圧する研磨剤押圧工
程を備えており、 前記研磨剤押圧工程は、気体を前記定盤の中心側に向か
って噴出して、前記研磨布上の研磨剤を前記定盤の中心
側に押圧する工程を含むことを特徴とする半導体基板の
研磨方法。11. A polishing agent is supplied onto a polishing cloth placed on the flat surface of a surface plate having a flat surface and rotating about an axis perpendicular to the flat surface, and the semiconductor substrate is removed. A method of polishing a semiconductor substrate, wherein the semiconductor substrate is polished while pressing against a polishing cloth, wherein the polishing is performed on the polishing cloth and flows to the outside of the surface plate by centrifugal force accompanying rotation of the surface plate. An abrasive pressing step of pressing an agent toward the center of the surface plate, wherein the abrasive pressing step ejects a gas toward the center of the surface plate to remove the abrasive on the polishing cloth. A method of polishing a semiconductor substrate, comprising a step of pressing the platen toward the center of the platen. 【請求項１２】 平坦面を有し該平坦面と垂直な軸を中
心に回転する定盤の前記平坦面上に載置された研磨布の
上に研磨剤を供給すると共に、半導体基板を前記研磨布
に対して押圧しながら、前記半導体基板を研磨する半導
体基板の研磨方法であって、前記研磨布上に供給され前
記定盤の回転に伴う遠心力により前記定盤の外側に流動
する研磨剤を前記定盤の中心側に押圧する研磨剤押圧工
程を備えており、 前記研磨剤押圧工程は、前記研磨布の上に該研磨布と接
する状態又は僅かな隙間をおいた状態で設けられ前記定
盤と逆方向に回転する回転部材により、前記研磨布上の
研磨剤を前記定盤の中心側に押圧する工程を含むことを
特徴とする半導体基板の研磨方法。12. An abrasive is supplied onto a polishing cloth placed on the flat surface of a surface plate having a flat surface and rotating about an axis perpendicular to the flat surface, and the semiconductor substrate is removed. A method of polishing a semiconductor substrate, wherein the semiconductor substrate is polished while pressing against a polishing cloth, wherein the polishing is performed on the polishing cloth and flows to the outside of the surface plate by centrifugal force accompanying rotation of the surface plate. An abrasive pressing step of pressing an agent toward the center of the surface plate, wherein the abrasive pressing step is provided on the polishing cloth in a state of being in contact with the polishing cloth or with a slight gap therebetween. A method for polishing a semiconductor substrate, comprising a step of pressing an abrasive on the polishing cloth toward the center of the surface plate by a rotating member that rotates in a direction opposite to the surface plate. 【請求項１３】 平坦面を有し該平坦面と垂直な軸を中
心として回転する定盤の平坦面上に載置された研磨布の
上に研磨剤を供給すると共に、半導体基板を前記研磨布
に対して押圧しながら、前記半導体基板を研磨する半導
体基板の研磨方法であって、前記定盤の周縁部に、研磨
時の定盤回転方向の前方側が後方側よりも定盤径方向の
内側に位置するように固定された研磨剤保持部材によ
り、前記研磨布上に供給され前記定盤の回転に伴う遠心
力により前記定盤の外側に流動する研磨剤を前記研磨布
上に保持する研磨剤保持工程を備えていることを特徴と
する半導体基板の研磨方法。13. A polishing agent is supplied onto a polishing cloth placed on a flat surface of a surface plate having a flat surface and rotating about an axis perpendicular to the flat surface, and polishing the semiconductor substrate. A method of polishing a semiconductor substrate, wherein the semiconductor substrate is polished while pressing against a cloth, wherein a front side in a rotation direction of the surface plate at the time of polishing is closer to a periphery of the surface plate than to a rear side in a diameter direction of the surface plate. An abrasive holding member fixed so as to be positioned inside holds the abrasive supplied on the polishing cloth and flowing to the outside of the platen by centrifugal force accompanying rotation of the platen on the polishing cloth. A method for polishing a semiconductor substrate, comprising a polishing agent holding step. 【請求項１４】 前記研磨剤保持工程は、前記定盤の周
縁部に互いに隙間をおいて設けられた複数個の前記研磨
剤保持部材により、前記研磨布上の研磨剤を前記研磨布
上に保持する工程を含むことを特徴とする請求項１３に
記載の半導体基板の研磨方法。14. The polishing agent holding step, wherein the polishing agent on the polishing pad is placed on the polishing pad by a plurality of the polishing pad holding members provided at the periphery of the platen with a gap therebetween. 14. The method for polishing a semiconductor substrate according to claim 13, further comprising a step of holding. 【請求項１５】 前記研磨剤保持工程は、複数個の前記
研磨剤保持部材のうち互いに隣り合う研磨剤保持部材が
定盤径方向から見て互いに重なっている複数個の前記研
磨剤保持部材により、前記研磨布上の研磨剤を前記研磨
布上に保持する工程を含むことを特徴とする請求項１４
に記載の半導体基板の研磨方法。15. The polishing agent holding step is performed by a plurality of polishing agent holding members in which adjacent polishing agent holding members among the plurality of polishing agent holding members overlap each other when viewed from a platen diameter direction. 15. The method according to claim 14, further comprising the step of holding an abrasive on the polishing cloth on the polishing cloth.
3. The method for polishing a semiconductor substrate according to item 1. 【請求項１６】 前記定盤を研磨時の定盤回転方向と逆
方向に回転することにより、前記研磨布の上に供給され
た洗浄液を排出する洗浄液排出工程をさらに備えている
ことを特徴とする請求項１３に記載の半導体基板の研磨
方法。16. A cleaning liquid discharging step of discharging a cleaning liquid supplied onto the polishing cloth by rotating the surface plate in a direction opposite to a rotation direction of the surface plate during polishing. The method for polishing a semiconductor substrate according to claim 13. 【請求項１７】 前記研磨剤保持部材を前記研磨布に対
して上方、下方又は外方に移動する研磨剤保持部材移動
工程と、 前記半導体基板を前記研磨布と平行な平面内で移動させ
ることにより、前記半導体基板の少なくとも一部分を前
記研磨布から突出させる基板移動工程とをさらに備えて
いることを特徴とする請求項１３に記載の半導体基板の
研磨方法。17. An abrasive holding member moving step of moving the abrasive holding member upward, downward, or outward with respect to the polishing cloth; and moving the semiconductor substrate in a plane parallel to the polishing cloth. The method according to claim 13, further comprising: a substrate moving step of causing at least a portion of the semiconductor substrate to protrude from the polishing cloth.