TW448587B - Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials - Google Patents

Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials

Info

Publication number
TW448587B
TW448587B TW088113055A TW88113055A TW448587B TW 448587 B TW448587 B TW 448587B TW 088113055 A TW088113055 A TW 088113055A TW 88113055 A TW88113055 A TW 88113055A TW 448587 B TW448587 B TW 448587B
Authority
TW
Taiwan
Prior art keywords
materials
semiconductor devices
content
aluminum content
devices fabricated
Prior art date
Application number
TW088113055A
Other languages
English (en)
Inventor
Reena Khare
Fred A Kish
Original Assignee
Lumileds Lighting Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds Lighting Llc filed Critical Lumileds Lighting Llc
Application granted granted Critical
Publication of TW448587B publication Critical patent/TW448587B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW088113055A 1999-01-14 1999-07-30 Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials TW448587B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/231,411 US6201264B1 (en) 1999-01-14 1999-01-14 Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials

Publications (1)

Publication Number Publication Date
TW448587B true TW448587B (en) 2001-08-01

Family

ID=22869138

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088113055A TW448587B (en) 1999-01-14 1999-07-30 Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials

Country Status (6)

Country Link
US (2) US6201264B1 (zh)
JP (1) JP2000208811A (zh)
KR (1) KR20000053477A (zh)
DE (1) DE19944020A1 (zh)
GB (1) GB2345792A (zh)
TW (1) TW448587B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6314118B1 (en) * 1998-11-05 2001-11-06 Gore Enterprise Holdings, Inc. Semiconductor device with aligned oxide apertures and contact to an intervening layer
TW502458B (en) * 1999-06-09 2002-09-11 Toshiba Corp Bonding type semiconductor substrate, semiconductor light emission element and manufacturing method thereof
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
US6674777B1 (en) * 2000-08-31 2004-01-06 Honeywell International Inc. Protective side wall passivation for VCSEL chips
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
DE10056476B4 (de) * 2000-11-15 2012-05-03 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Verfahren zu dessen Herstellung
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) * 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6891202B2 (en) * 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
US7858403B2 (en) 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
CN1729600B (zh) * 2002-12-20 2010-05-26 克里公司 具有自对准半导体平台和接触层的半导体器件和相关器件的制造方法
TWI266435B (en) * 2004-07-08 2006-11-11 Sharp Kk Nitride-based compound semiconductor light emitting device and fabricating method thereof
JP4371956B2 (ja) * 2004-09-02 2009-11-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP4767035B2 (ja) * 2005-04-12 2011-09-07 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP4892940B2 (ja) 2005-11-29 2012-03-07 富士ゼロックス株式会社 面発光型半導体レーザ装置およびその製造方法
JP4945167B2 (ja) * 2006-05-12 2012-06-06 スタンレー電気株式会社 半導体発光素子の製造方法及び該製造方法により製造された半導体発光素子の実装方法
JP2008091862A (ja) * 2006-09-08 2008-04-17 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2008117824A (ja) * 2006-11-01 2008-05-22 Sharp Corp 窒化物系半導体素子の製造方法
US7955875B2 (en) * 2008-09-26 2011-06-07 Cree, Inc. Forming light emitting devices including custom wavelength conversion structures
JP5754624B2 (ja) 2010-05-25 2015-07-29 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
JP5721055B2 (ja) * 2010-06-11 2015-05-20 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法
DE102010026518A1 (de) 2010-07-08 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
JP5612407B2 (ja) * 2010-09-13 2014-10-22 浜松ホトニクス株式会社 半導体受光素子及び半導体受光素子の製造方法
RU2560804C1 (ru) * 2014-06-26 2015-08-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" (СибГАУ) Способ изготовления волноводов миллиметрового диапазона
US10749070B2 (en) * 2016-05-20 2020-08-18 Lumileds Llc Method of forming a P-type layer for a light emitting device
KR102125313B1 (ko) * 2018-12-20 2020-06-22 한국광기술원 산화막이 형성된 마이크로 led 및 그의 제조방법
KR20220107309A (ko) * 2021-07-27 2022-08-02 충칭 콘카 포토일렉트릭 테크놀로지 리서치 인스티튜트 컴퍼니 리미티드 Led 에피택셜 구조 및 이의 제조 방법, led 장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268174A (ja) * 1988-04-20 1989-10-25 Hitachi Cable Ltd 発光素子の製造方法
JP2559536B2 (ja) * 1990-12-17 1996-12-04 信越半導体株式会社 発光素子の製造方法
US5262360A (en) 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
JP3152474B2 (ja) * 1991-01-29 2001-04-03 三洋電機株式会社 発光ダイオ−ド
US5214306A (en) 1991-01-29 1993-05-25 Sanyo Electric Co., Ltd. Light emitting diode
US5327448A (en) * 1992-03-30 1994-07-05 The Board Of Trustees Of The University Of Illinois Semiconductor devices and techniques for controlled optical confinement
JP2817590B2 (ja) * 1993-09-24 1998-10-30 信越半導体株式会社 発光素子の製造方法
US5400354A (en) * 1994-02-08 1995-03-21 Ludowise; Michael Laminated upper cladding structure for a light-emitting device
US5550081A (en) * 1994-04-08 1996-08-27 Board Of Trustees Of The University Of Illinois Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
US5517039A (en) 1994-11-14 1996-05-14 Hewlett-Packard Company Semiconductor devices fabricated with passivated high aluminum-content III-V material
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
JP3182346B2 (ja) * 1995-08-31 2001-07-03 株式会社東芝 青色発光素子及びその製造方法
JPH0983061A (ja) * 1995-09-08 1997-03-28 Sharp Corp 半導体レーザ素子の製造方法および半導体レーザ素子製造装置
US5888370A (en) * 1996-02-23 1999-03-30 Board Of Regents, The University Of Texas System Method and apparatus for fractionation using generalized dielectrophoresis and field flow fractionation
JP3207773B2 (ja) * 1996-12-09 2001-09-10 株式会社東芝 化合物半導体発光素子及びその製造方法
JP3710573B2 (ja) * 1996-09-30 2005-10-26 シャープ株式会社 窒化ガリウム系化合物半導体発光素子の電極構造
JP2967743B2 (ja) * 1997-01-14 1999-10-25 日本電気株式会社 ｎ型窒化ガリウム系半導体のコンタクト電極及びその形成方法
JPH10242507A (ja) * 1997-02-21 1998-09-11 Oki Electric Ind Co Ltd 発光ダイオードおよびその製造方法
US5886370A (en) * 1997-05-29 1999-03-23 Xerox Corporation Edge-emitting semiconductor lasers

Also Published As

Publication number Publication date
GB2345792A (en) 2000-07-19
US6048748A (en) 2000-04-11
US6201264B1 (en) 2001-03-13
GB0000106D0 (en) 2000-02-23
JP2000208811A (ja) 2000-07-28
KR20000053477A (ko) 2000-08-25
DE19944020A1 (de) 2000-07-27

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