TW434661B

TW434661B - Method and apparatus for preventing particles re-attachment in a wafer cleaning process

Info

Publication number: TW434661B
Application number: TW88121620A
Authority: TW
Inventors: Ching-Yu Jang
Original assignee: Macronix Int Co Ltd
Priority date: 1999-12-10
Filing date: 1999-12-10
Publication date: 2001-05-16

Abstract

The present invention provides an apparatus for preventing particles re-attachment in a wafer cleaning process, which at least comprises a vessel containing high pressure water with gas dissolved therein, a cleaning tank for washing wafers using high pressure water, and a pipeline for connecting the vessel and the cleaning tank and conducting the high pressure water of the vessel into the cleaning tank, in order to form a plurality of bubbles on the surface of the particles and the wafers. The present invention also discloses a method for preventing particles re-attachment in a wafer cleaning process, in which at least a vessel, a cleaning tank, and a pipeline for connecting the vessel and the cleaning tank are provided. Subsequently, a high pressure of water with gas dissolved therein provided in the vessel is conducted into the cleaning tank in order to form bubbles on the surface of particles and the wafers in the cleaning tank. The particles near the wafers are pushed away therefrom by these bubbles and the particles far away from the surface of the wafer don't re-attach thereon any more as a result of the repulsion between the bubbles.

Description

434G6 1434G6 1

五、發明說明（1) 5-1發明領域： -種= :潔淨的製程’特別是有關於展程令防止微粒再附著的裝置與方法。 5-2發明背景：V. Description of the invention (1) 5-1 Field of the invention:-Species =: Clean process', especially regarding the device and method for preventing the re-attachment of particles by the extension order. 5-2 Background of the Invention:

在超大型日日體電路（UIST.IM+ τ c J γ , , , . ^ lULbi , Ultra Large ScaledIn the ultra-large heliosphere circuit (UIST.IM + τ c J γ,,,. ^ LULbi, Ultra Large Scaled

Integrated )製卷由白门, , .. 、中’日曰®洗淨的技術及潔淨度（ σ ^ ,丨.+ 、疋影響日日圓廠製程良率（y i e 1 d )、元件素之一。卢盆者制Γ可靠度rellabiHty )最重要的因 ΓΑ匕”田裏程技術精進到深次微米以下的領域時， 7C件密度將達到壑+ # μ # , α .,. 歎千萬到數十億個以上，而製造流程超過數百個步驟。槊你^a ^作故樣精祖複雜的產品時，需要非常潔淨 ' ,，來製作。因此如何清洗晶圓，以及達到超潔淨江时吨’疋目前超大型晶體電路半導體廠製程中最重要且最嚴謹的步驟之—。在晶圓洗淨的過程中，需要用到报多高純度的化學品 ( ^ a丨）末/月洗’以及咼純度的去離子純水（D I w a ΐ e r )、來洗濯（r inse )，最後用高純度的氣體（如氮氣）在高速下脫水旋乾；或是使用高揮發性的有機溶劑（如異丙醇 —IPA)來除濕乾化。晶圓的洗淨技術，從早期利用高純度的濕式化學洗淨（wet chemical clean)的RCA晶圓的洗淨Integrated) The rolls are made by the white door,, .., and the Japanese and Japanese ® cleaning technology and cleanliness (σ ^, 丨. +, 疋 affects the yield rate of the Japanese yen plant (yie 1 d), one of the component elements The most important factor is the reliability of the Lupenzi system (rellabiHty). When the field technology is refined into the sub-micron field, the density of 7C pieces will reach 壑 + # μ #, α.,. Billions or more, and the manufacturing process exceeds hundreds of steps. 槊 You ^ a ^ When you make a sophisticated product like this, you need to be very clean ', to make it. So how to clean wafers and achieve ultra-cleanliness Hour ton '疋 At present, it is one of the most important and rigorous steps in the manufacturing process of very large crystal circuit semiconductor factories. In the process of wafer cleaning, it is necessary to use high-purity chemicals (^ a 丨). Washing and deionized pure water (DI wa ΐ er), rinsing (r inse), and finally using a high purity gas (such as nitrogen) to dehydrate and spin dry at high speed; or use a highly volatile organic solvent (Such as isopropyl alcohol-IPA) to dehumidify and dry. Wafer cleaning technology, from early use RCA wet chemical cleaning of the wafer cleaning purity (wet chemical clean) of

43466 t 五、發明說明（2) 配方’已經沿用超過三十年’並未有太大的改變’只有在化學配方的比例（ratio)上及清潔順序（sequence)上做了些微的些改調整’例如將SCI的比例（νη40Η : H2 02 : D I = 1 : 1:5)更稀釋低濃度到（NH4OH:H2O2:DI = l:1.5:60)。洗淨的目的’主要係藉由化學品來清除晶圓表面的污染（contamination) ’ 如微粒（particie)，有機物（ organic) ’與無機物的金屬離子（metal i〇ns)等雜質（ inipuri ty )，並利用超純水洗濯雜質。在超大型積體電路製程中’閘氧化層（gate oxide)的厚度已低於1〇〇埃以下，尚需考量洗淨之後’晶圓表面的微粗糙程度（ micro-roughness)，及原生氧化物（native oxide)的清除’以達到半導體元件超薄閘極氧化層（u丨t r a_ th i n ga t e oxide)的電性參數及特性（eiectrical parameters and characteristics ) ’並達到元件的品質及可靠度。一般濕式化學洗淨程式，主要仍以RCA為主，而經過改良’以應用在超大型積體電路製程上的需求及爐管擴散前清洗’而開發出多種的洗诤應用程式，如擴散前清洗（ pre-diffusion clean)，閘極氧化層前清洗（pre_gate oxide clean)，化學氣相沉積前清洗（pre_CVD clean) 等。濕式化學洗淨製程技術，目前主要有三種不同形式的洗淨機台，各種洗淨機台有其不同的優缺點及考量範圍，接下來分別介紹各種洗淨機台。43466 t V. Description of the invention (2) The formula 'has been in use for more than thirty years' has not changed much' Only minor changes have been made to the ratio of the chemical formula and the cleaning sequence 'For example, dilute the ratio of SCI (νη40Η: H2 02: DI = 1: 1: 5) to a lower concentration (NH4OH: H2O2: DI = 1: 1.5: 60). The purpose of cleaning 'mainly to remove contamination of the wafer surface by chemicals' such as particles (particie, organic) and impurities such as metal ions (inipuri ty) , And use ultrapure water to wash impurities. In the process of ultra-large integrated circuits, the thickness of the gate oxide has been less than 100 angstroms, and the micro-roughness of the wafer surface after cleaning and the native oxidation need to be considered. (Native oxide) removal to achieve the electrical parameters and characteristics of the ultra-thin gate oxide layer of the semiconductor device (u 丨 tr a_th in ga te oxide) and achieve the quality and reliability of the device . General wet chemical cleaning programs are still mainly RCA, and various cleaning applications have been developed, such as diffusion, based on the improvement of 'application to the needs of ultra-large integrated circuit manufacturing processes and cleaning of furnace tubes before diffusion'. Pre-diffusion clean, pre_gate oxide clean, pre_CVD clean, etc. There are currently three different types of cleaning machines for wet chemical cleaning process technology. Each type of cleaning machine has different advantages, disadvantages and considerations. Next, we will introduce various cleaning machines.

434661434661

濕式洗淨工作台（w e t b e n c h ) ’又稱為浸洗式化學洗淨站（immersion chemical station)。如第一圖所示為一種傳統的濕式洗淨工作台1 〇的示意圖，其具有兩個化學槽（chamber ) 12-1，12-3，兩個超純水洗濯槽（chamber )12-2，12-4 ’其中兩個化學槽分別為氫敦酸槽12-1與gel 槽12-3。每個槽12各有一個管路14通入，比如氫氟酸槽12 -1就經由管路14-1通入氫氟酸。機械手臂（robot )夾住晶圓1放入氫氟酸槽12-1中。這種化學洗淨技術已經完全自動化控制，線上操作人員（operat〇r )只要將需要洗淨的晶圓放置在濕式洗淨工作台的輸入端，依照流程與洗淨程式（r ec i pe )，機器手臂會將晶圓送到濕式洗淨工作台的其中一個酸槽進行潔淨。一般濕式洗淨工作台具有換酸（ chemical change)、控制溫度與酸洗時間、機器手臂操作、控制酸槽濃度、與示警系統等的軟體監控功能。利用濕式洗淨工作台之間不同的酸槽，可達到不同的洗淨程式。喷洗式化學洗淨機（spray chemical cleaning p r o c e s s o r ) ’如第二圖所示為一種傳統的喷洗式化學洗淨機20示意圖。在圖中，化學溶液存放在不同的容器22中，經由洗淨程式的需要，氮氣加壓容器2 2使化學溶液輸入到一流量控制及化學液混合管2 1中，化學溶液再由管路2 3到喷洗柱（spray-post ) 24後均句地喷灑在晶圓1上，其中晶圓1是放在潔淨槽（chamber ) 25中。這種洗淨的方式是晶Wet cleaning station (wet ben c h) 'is also called immersion chemical cleaning station (immersion chemical station). As shown in the first figure, a schematic diagram of a conventional wet cleaning workbench 10 is provided, which has two chemical tanks 12-1, 12-3 and two ultra-pure water cleaning tanks 12- 2,12-4 'two of the chemical tanks are the hydrogen acid tank 12-1 and the gel tank 12-3. Each tank 12 has a pipeline 14 for access, for example, the hydrofluoric acid tank 12-1 is connected to the hydrofluoric acid via the pipeline 14-1. A robot arm grips the wafer 1 and puts it into the hydrofluoric acid tank 12-1. This chemical cleaning technology has been fully automated. As long as the online operator (operat〇r) places the wafer to be cleaned at the input of the wet cleaning workbench, according to the process and cleaning program (r ec i pe ), The robot arm will send the wafer to one of the acid tanks of the wet cleaning table for cleaning. The general wet cleaning workbench has software monitoring functions such as chemical change, temperature and pickling time control, robot arm operation, acid tank concentration control, and alarm system. Different cleaning channels can be achieved by using different acid tanks between wet cleaning stations. A spray chemical cleaning machine (spray chemical cleaning machine) is shown in the second figure, which is a schematic view of a conventional spray chemical cleaning machine 20. In the figure, the chemical solution is stored in different containers 22. Through the needs of the cleaning program, the nitrogen is pressurized to the container 22 to input the chemical solution into a flow control and chemical liquid mixing tube 21, and the chemical solution is then passed through the pipeline. After 2 3 to the spray-post 24, the wafer 1 is sprayed on the wafer 1 in a sentence, wherein the wafer 1 is placed in a clean chamber 25. This way of washing is crystal

第6頁 434661 五、發明說明（4) __ 圓1置於/絜淨槽26内的轉盤)26上。斬蘇淨化學溶液經氮氣加壓，由喷洗柱24均勻喷灑在1 ;先作為化學清洗與超純水洗濯之用丨轉盤26依照洗淨裎上设定的轉逮’依照不同的洗淨循環自動㈣，以 ^，的洗淨，果。♦次洗淨循環喷洗後的化學酸驗會隨即排， ’因此每次清洗時都是新鮮潔淨的化學酸鹼噴洗，不若、晶式洗淨工作台的化學酸槽是8到1 2小時的時間周期換酸/1 次或2 0到3 0次洗過批數的洗批周期換酸一次，因此酸槽内的化學酸驗潔淨度’隨著洗過的晶圓變數增加而髒污，且金屬及有機雜質沉積在槽内而造成污染。此外，噴洗旋轉 —盤上的晶圓’在改換不同的化學溶液時，喷洗柱與潔淨槽是經由超純水洗濯乾淨之後，再喷洗不同的化學溶液而避免父互污染（cross contamination)。單槽式（single bath)洗淨機台，又稱為密閉容器化學洗淨糸統（enclosed-vessel chemical cleaningPage 6 434661 V. Description of the invention (4) __ Circle 1 is placed on the / turntable in the clean tank 26) 26. Cho Sujing chemical solution is pressurized with nitrogen and sprayed evenly from spray column 24; it is used for chemical cleaning and ultrapure water washing first. Rotary plate 26 is set according to the rotation set on the washing plate. The net cycle is automatically washed, washed with ^,, and fruit. ♦ The chemical acid test after spray cleaning will be discharged immediately after washing. 'Therefore, each cleaning is fresh and clean chemical acid and alkali spray cleaning. If not, the chemical acid tank of the crystal cleaning table is 8 to 1. Change the acid in a 2 hour time period / 1 time or 20 to 30 times in the washing cycle. Change the acid once in the washing cycle. Therefore, the chemical acid cleanliness in the acid tank will increase as the number of washed wafers increases. Dirty, and metal and organic impurities are deposited in the tank and cause pollution. In addition, when spray cleaning the wafers on the rotating-disk, when changing different chemical solutions, the spray column and the cleaning tank are cleaned by ultrapure water, and then different chemical solutions are sprayed to avoid cross contamination. ). Single bath washing machine, also known as closed-vessel chemical cleaning system

I system )。如第三圖所示為一種傳統的單槽式洗淨機台30 示意圖。多數個容器31存放不同的化學溶液，經由洗淨程式的控制開啟閥32，使得指定的化學溶液經由管路33流到潔淨槽（chamber ) 34中，其中潔淨槽34是一種密閉單容器 (single enclosed vessel)。另外，在潔淨槽34 上有一個排液裝置（dr a i η ) 3 5。這種化學技術是將晶圓放置在密閉單容器的潔淨槽34内，以一設定的洗淨程式，通入不同的化學溶液到密閉容器内將晶圓洗淨。洗淨前’晶圓放在I system). A schematic diagram of a conventional single-tank washing machine 30 is shown in the third figure. The plurality of containers 31 store different chemical solutions, and the valve 32 is opened by the control of the washing program, so that the specified chemical solution flows into the clean chamber (chamber) 34 through the pipeline 33, wherein the clean tank 34 is a closed single container (single enclosed vessel). In addition, there is a drain device (dr a i η) 3 5 on the clean tank 34. In this chemical technique, a wafer is placed in a clean tank 34 of a closed single container, and a different cleaning solution is used to pass different chemical solutions into the closed container to clean the wafer. Before cleaning ’the wafer is placed

434661434661

有溝槽的容器内，液將晶圓洗淨。同超純水洗濯乾淨之污染。覆蓋密閉之後_，依序樣的，在改換不同的後’再喷洗不同的化通入不同的化學溶化學溶液時，通入學溶液而避免交互由於有些特別的製程，如吸附微粒，因為晶片表面是斥很大’裸矽（bare silicon ) 易吸附微粒。如第四圖所示晶溶液2中，當機械手臂將晶圓1 微粒4會吸附在晶圓的表面。難處理’微粒的數量都會比較通常都要加入第二道的SCI來 ’因而有許多的限制。氫氟酸餘刻後的製程，容易水性的，表面的反應活化能很容易反應，氧化，也很容圓1放在酸槽3中浸置在化學取出時，從微觀的角度來看所以氫氟酸蝕刻後的介面最高。因此，氫氟酸蝕刻之後清除氫氟酸银刻之後的微粒再者’ RCA的功能就是去除微粒與金屬離子，或是银刻氧化矽之類’而在這些過程中大都需要化學品，但是化學品在傳統的洗淨機台與洗淨方式會造成下列缺點。首先，SCl(NH；3/H2〇2/H2〇 )洗淨程式中的化學品會蝕刻氧化石夕，石夕化嫣’造成裸；s夕的粗糙程度（roughness)。再者，sci 洗淨會造成金屬離子的污染’ 一般的解決方式是以SC2在 SCI後面去除。另外，有些圖案不能使用化學品，會融刻些微的光阻層，這在光陴微影後的潔淨是相當不利的。In a grooved container, the wafer is cleaned with liquid. Wash the contamination with ultrapure water. After the cover is sealed, in order, after changing different ones, 'spray and wash different chemicals and enter different chemically-soluble chemical solutions, enter the academic solution to avoid interaction due to some special processes, such as adsorbing particles, because the wafer The surface is repellent, and bare silicon easily adsorbs particles. As shown in the fourth figure, when the robot arm picks up the particles 1 of the wafer 1 on the surface of the wafer in the crystal solution 2. The number of difficult particles to be treated is relatively large. Usually, a second SCI is added, and therefore there are many restrictions. The hydrofluoric acid after-treatment process is easy to be water-based, and the surface activation energy is easy to react, oxidize, and is very tolerant. 1 It is placed in an acid tank 3 and immersed in chemical extraction. The interface after fluoric acid etching is the highest. Therefore, after the hydrofluoric acid etching, the particles after the silver hydrofluoride etching are removed, and the function of the RCA is to remove the particles and metal ions, or the silver etched silicon oxide and the like. In these processes, most of the chemicals are needed, but Products in the traditional washing machine and cleaning methods will cause the following disadvantages. First, the chemicals in the SCl (NH; 3 / H2O2 / H2O) washing process will etch the oxidized stone, which will cause nakedness; the roughness of the six. Furthermore, sci washing will cause metal ion pollution ’. The general solution is to remove SC2 behind SCI. In addition, some patterns cannot use chemicals, and will engrav a slight photoresist layer, which is very unfavorable for cleaning after photolithography.

434661 五、發明說明（6) 5 - 3發明目的及概述：鑒於上述之發明背景中’傳統的晶圓潔淨製程所產生的諸多缺點，本發明提供一種晶圓潔淨的方法’可以防止微粒再附著於晶圓上，同時也不會蚀刻氧化矽’石夕化鎢與光阻。另外，本發明的晶圓潔淨製程不會產生金屬離子與微粒污染。本發明的另一目的在於可應用在喷洗式化學洗淨機，刷洗機（s c r u b b e r )，以及喷射系統（i e ΐ s y s t e m )等各種濕式潔淨設備。本發明的又一目的在於本發明的潔淨方法不需要使用化學品就可以有效控制在氫氟酸蝕刻製程之後高微粒的問題且可避免微粒回沾。本發明的另一目的在於成本低且不需要污水處理.，也沒有化學物殘留。本發明的再一目的在於可以應用在光阻清洗上，因為本發明的潔淨方法不會對光阻產生傷害。，根據以上所述之目的，本發明提供了一種晶圓潔淨製程中防止U粒再附著之裝置，其包含一内含已溶解氣體之434661 V. Description of the invention (6) 5-3 Purpose and summary of the invention: In view of the many shortcomings of the traditional wafer cleaning process in the above background of the invention, the present invention provides a method for wafer cleaning to prevent particles from re-attaching On the wafer, silicon oxide, tungsten oxide and photoresist will not be etched at the same time. In addition, the wafer cleaning process of the present invention does not generate metal ion and particulate pollution. Another object of the present invention is to be applicable to various wet-type cleaning equipment such as a spray-type chemical cleaning machine, a scrubber (s c r u b b e r), and a spray system (i e ΐ s s s t e m). Another object of the present invention is that the cleaning method of the present invention can effectively control the problem of high particles after the hydrofluoric acid etching process without using chemicals, and can prevent the particles from sticking back. Another object of the present invention is that the cost is low, no sewage treatment is needed, and there is no chemical residue. Another object of the present invention is to apply it to photoresist cleaning, because the cleaning method of the present invention does not cause damage to the photoresist. According to the above-mentioned object, the present invention provides a device for preventing U particles from re-adhering in a wafer cleaning process, which includes a device containing a dissolved gas.

43466 1 五、發明說明（7) 高壓水的容器，其中高壓水之壓力大小約為一到五大氣壓。另外，包含一以高壓水洗淨晶圓的潔淨槽，與一位於潔淨槽上的出風口。其次，包含一用以連接容器與潔淨槽，使得容器内的高壓水得以通入潔淨槽之管路，然後在晶圓以及微粒的表面形成多數個氣泡，以及一位於管路上的閥，其中閥係用以控制管路的開關狀態。本發明同時提供一種晶圓潔淨製程中防止微粒再附著之方法，其包含先提供 —容器，一潔淨槽，與一管路，其中管路係用以連接容器與潔淨槽。接著，在容器内提供已溶解氣體之高壓水，以及將容器内之高壓水通入潔淨槽中，使得高壓水在潔淨槽中的晶圓及微粒的表面形成氣泡，其中靠近該晶圓的微粒會被氣泡推離該晶圓的表面，且已經離開該晶圓表面的微粒會因為氣泡間的斥力而不會回沾到該晶圓的表面上。 5 - 4圖式簡單說明：本發明之上述目的與優點，將以下列的實施例以及圖示，做詳細說明如下，其中：第一圖為洗淨機台中傳統的濕式洗淨工作台的示意圖第二圖為洗淨機台中傳統的喷洗式化學洗淨機的示意圖；43466 1 V. Description of the invention (7) High pressure water container, in which the pressure of high pressure water is about one to five atmospheres. In addition, it includes a clean tank that cleans the wafer with high pressure water, and an air outlet on the clean tank. Secondly, it includes a pipeline for connecting the container to the clean tank, so that the high-pressure water in the container can pass into the clean tank, and then a plurality of bubbles are formed on the surface of the wafer and the particles, and a valve on the pipeline, wherein the valve It is used to control the switching state of the pipeline. The invention also provides a method for preventing the re-attachment of particles in the wafer cleaning process, which includes first providing a container, a clean tank, and a pipeline, wherein the pipeline is used to connect the container and the clean tank. Next, high-pressure water with dissolved gas is provided in the container, and the high-pressure water in the container is passed into the clean tank, so that the high-pressure water forms bubbles on the surface of the wafer and particles in the clean tank, and the particles close to the wafer The bubbles will be pushed away from the surface of the wafer, and the particles that have left the surface of the wafer will not return to the surface of the wafer due to the repulsion between the bubbles. Schematic illustrations of 5-4: The above-mentioned objects and advantages of the present invention will be described in detail with the following examples and illustrations, where: The first picture is a conventional wet cleaning workbench in a washing machine Schematic diagram The second diagram is a schematic diagram of a traditional spray-type chemical washing machine in a washing machine;

第10頁 43466 1 五、發明說明（8) 第三圖為洗淨機台中傳統的單槽式洗淨機的示意圖；第四圖為使用傳統的洗淨技術，在濕式洗淨工作台將晶圓取出時微粒附者在晶圓上的不意圖，第五圖為使用本發明的技術，在清洗晶圓時氣泡將微粒晶0表面的不意圖，第六圖為使用本發明的技術，係本發明的一種裝置示意圖；第七圖係根據本發明所揭露之技術，應用在單槽式洗淨機的示意圖；及第八圖係根據本發明所揭露之技術，應用在濕式洗淨工作台的示意圖。主要部分之代表符號： 1 晶圓 2 化學溶液 3 潔淨槽 4 微粒 5 機器手臂Page 10 43466 1 V. Description of the invention (8) The third picture is a schematic diagram of the traditional single-tank washing machine in the washing machine table; the fourth picture is the use of traditional washing technology, The intention of the particles on the wafer when the wafer is taken out. The fifth figure is the intention of using the technology of the present invention to clean the surface of the particles with bubbles when cleaning the wafer. The sixth figure is the use of the technology of the present invention. FIG. 7 is a schematic diagram of a device of the present invention; FIG. 7 is a schematic diagram of a single-tank washing machine applied according to the technology disclosed in the present invention; and FIG. 8 is a diagram of a wet-type cleaning machine according to the disclosed technology. Schematic of the workbench. Representative symbols of main parts: 1 wafer 2 chemical solution 3 clean tank 4 particle 5 robot arm

第11頁 434^61 五、發明說明 (9) 10 濕式洗淨工作台 12 潔淨槽 14 管路. 20 喷洗式化學洗淨機 21 流量控制及化學液混合管 22 容器 23 管路 24 喷洗柱 25 潔淨槽 26 轉盤 30 單槽式洗淨機台 31 容器 32 閥 33 管路 34 潔淨槽 35 排液裝置 100 晶圓 102 高壓水 104 微粒 106 氣泡 107 超音波震盪 110 濕式洗淨工作台 112 潔淨槽 114 管路Page 11 434 ^ 61 V. Description of the invention (9) 10 Wet cleaning workbench 12 Clean tank 14 pipeline. 20 Spray-wash chemical washing machine 21 Flow control and chemical liquid mixing pipe 22 Container 23 Pipe 24 Spray Washing column 25 Clean tank 26 Turntable 30 Single tank washing machine 31 Container 32 Valve 33 Pipe 34 Clean tank 35 Draining device 100 Wafer 102 High-pressure water 104 Particles 106 Bubble 107 Ultrasonic vibration 110 Wet cleaning table 112 Clean tank 114 Pipe

第12頁 4 3 4 6 6 1 五、發明說明（ίο) 130 單轉式洗淨機台 131 容器 132 閥 133 管路 134 潔淨槽. 135 排液裝置 136 容器 137 管路 138 閥 2 0 0 容器 210 管路 215 閥 22 0 潔淨槽 23 0 排液裝置 5 - 5發明詳細說明：本發明的一些實施例詳細描述如下。然而，除了詳細描述外，本發明還可以廣泛地在其他的實施例中施行，且本發明的範圍不受限定，其以之後的專利範圍為準。本發明的方法，是使用高壓水溶液。當高壓水溶液到達低壓的潔淨槽環境時，它的壓力會釋放開來。就像是打開汽水時，氣泡會冒出來，其中汽水溶解的是C02，因為Page 12 4 3 4 6 6 1 V. Description of the invention 130 Single-turn washing machine 131 Container 132 Valve 133 Pipe 134 Clean tank. 135 Drainage device 136 Container 137 Pipe 138 Valve 2 0 0 Container 210 pipeline 215 valve 22 0 clean tank 23 0 liquid discharge device 5-5 Detailed description of the invention: Some embodiments of the present invention are described in detail below. However, in addition to the detailed description, the present invention can be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of subsequent patents. The method of the present invention uses a high-pressure aqueous solution. When the high-pressure aqueous solution reaches a low-pressure clean tank environment, its pressure is released. It ’s like when you open the soda, bubbles will pop out, and the soda will dissolve in C02, because

第13頁 434661 五、發明說明（11) -- C〇2是最容易溶解的氣體。因此，溶解在水中的氣體，在潔淨槽中釋放開來的時候’它馬上會形成氣泡層/'(bubble layer) °氣泡層在這裡有兩個功用，首先，氣泡合長大，微粒會被推開來，如果再輔以超音波（megas〇nic)S震盪的力量，氣泡會具有可塑性與按摩的效果，微粒更容易被去除。再者，氣泡層與氣泡層之間會有斥力而使微粒不再回沾’此種類似氣墊層的斥力’它不會讓微粒回沾。如第五圖所示，為本發明的潔淨製程中，以氣泡防止微粒附著在晶圓表面的過程，其中在本發明裡的氣體可以包含有空氣，〇2，C〇2，或是N2等。氣體依賴製程的要求、與晶圓表面是否易於反應、以及是否易於溶解等因素而選擇。一：k來说，空氣，〇2 , (；〇2 ,與化等通常具有上述的要求，然而其他符合上述要求的氣體也是可以，如惰性氣體等。在水中的高壓氣體不容易在任何地方產生氣泡，但是會在水與其他介面接觸的地方產生，比如氣泡在乾淨的水中^在杯壁上形成’氣泡只會在這裡成型，吸附，以及釋放出來。如第五圖所示’晶圓丨〇〇係在高壓水丨〇2中，而氣泡106通常是在晶圓100以及微粒1〇4的表面形成。靠近晶圓100的微粒104-1會被氣泡1〇6推離晶圓1〇〇的表面，而已經離開晶圓100表面的微粒1〇4_2會因為氣泡1〇6之間的斥力而不會回沾到晶圓i 〇〇的表面上。當然，在這裡也可以提供一些熱能讓氣泡更容易產生。在本發明中，氣泡只會在微粒及晶圓表面形成，並不易在水中單獨形成。另外Page 13 434661 V. Description of the invention (11)-CO2 is the most easily dissolved gas. Therefore, when the gas dissolved in water is released in the clean tank, it will immediately form a bubble layer / (bubble layer) ° The bubble layer has two functions here. First, the bubbles grow together and the particles will be pushed. In addition, if supplemented with the power of megasonic S, the bubbles will have the effect of plasticity and massage, and the particles will be more easily removed. Furthermore, there will be a repulsive force between the bubble layer and the bubble layer so that the particles will not re-attach. This type of repulsion force similar to an air cushion layer will not allow the particles to re-wet. As shown in the fifth figure, in the clean process of the present invention, bubbles are used to prevent particles from adhering to the wafer surface. The gas in the present invention may include air, 〇2, Co2, or N2, etc. . The gas depends on factors such as process requirements, ease of reaction with the wafer surface, and ease of dissolution. 1: In terms of k, air, 〇2, (; 〇2, and chemical, etc.) usually have the above requirements, but other gases that meet the above requirements are also possible, such as inert gases. High-pressure gas in water is not easy to be anywhere Air bubbles are generated, but they will be generated where the water is in contact with other interfaces. For example, air bubbles are formed in clean water. ^ Air bubbles will form, adsorb, and release on the wall of the cup. As shown in the fifth figure, the wafer丨〇〇 is in high pressure water 〇 02, and the bubble 106 is usually formed on the surface of the wafer 100 and the particles 104. The particles 104-1 near the wafer 100 will be pushed away from the wafer 1 by the bubbles 106. 〇〇 the surface, and the particles 1004_2 that have left the surface of the wafer 100 will not return to the surface of the wafer i 〇〇 due to the repulsive force between the bubbles 106. Of course, some can also be provided here Heat can make air bubbles more easily. In the present invention, air bubbles can only form on the surfaces of particles and wafers, and are not easy to form on water alone. In addition,

_Ι^·Ι 第14頁 434661 五、發明說明（12) ’再輔以超音波震盪1 〇 7，微粒1 〇 4更容易離開晶圓1 〇〇，因為超音波震盤主要是震動水分子，由水分子及氣泡所包覆的微粒將更容易被震出來。接下來介紹本發明的裝置。如第六圖所示係本發明的一種裝置示意圖，一容器200内含高壓水，—管路210將容器2 0 0連接到.一潔淨槽2 2 〇中。容器2 〇〇内含高壓水，其壓力約在1到5大氣壓’然而較佳的壓力為丨.5大氣壓。管路 2 1 0上有一閥2 1 5，係用來控制容器20 0内的高壓水是否流向潔淨槽2 2 〇。在潔淨槽2 2 0内，一晶圓1 〇〇浸置在高壓水 102中’此時高壓水1〇2在晶圓1〇〇的表面與潔淨槽22〇的内h 成氣泡106。在潔淨槽220上有一排液裝置23◦可排放潔淨槽2 2 0内的水以保持潔淨槽内的常壓。便，例所示，的裝置 s經由經由管閉單容傳統不與潔淨，並且經由管本發明應用在各種濕式潔淨設備上是相當的簡如一種應用在單槽式洗淨機台的實施例。如第七圖為本，，應用在單槽式洗淨機台1 30的示意圖，它 t:：，多數個容器1 3 1存放不同的化學溶液 =二式二控制開啟閥132，使得指定的化學溶液 :⑶:到潔淨# 134中，#中潔淨槽134是一種密 ^ 2 ^潔淨槽34上有—個排液襞置135。與 =連二增加了一條管咖，將-容_ 上f在容器136内含有高屋氣體水溶液在&路137上加—個間138來控制開目。當化學溶液_Ι ^ · Ι Page 14 434661 V. Description of the invention (12) 'Further supplemented by ultrasonic vibration 1 07, the particles 1 0 4 will leave the wafer 1 00 more easily, because the ultrasonic vibration disk mainly shakes water molecules, The particles covered by water molecules and bubbles will be more easily shaken out. Next, the device of the present invention will be described. As shown in the sixth figure, it is a schematic diagram of a device of the present invention. A container 200 contains high-pressure water. A pipeline 210 connects the container 200 to a clean tank 2 2 0. The container 2000 contains high-pressure water, and its pressure is about 1 to 5 atmospheres', but the preferred pressure is 1.5 atmospheres. There is a valve 2 15 on the pipeline 2 10, which is used to control whether the high-pressure water in the container 200 flows to the clean tank 2 2 0. In the clean tank 220, a wafer 100 is immersed in the high-pressure water 102. At this time, the high-pressure water 102 forms a bubble 106 on the surface of the wafer 100 and the inside of the clean tank 22. There is a drainage device 23 on the clean tank 220, which can discharge the water in the clean tank 220 to maintain the normal pressure in the clean tank. As shown in the example, the device s is traditionally not cleaned through the single-capacity closure via the tube, and the application of the present invention to various wet-type cleansing equipment via the tube is quite simple, such as the implementation of a single-tank cleaning machine example. As shown in the seventh figure, it is a schematic diagram of a single-tank washing machine 1 30, which t ::, a plurality of containers 1 3 1 store different chemical solutions = two-type two-control open valve 132 Chemical solution: ⑶: to clean # 134, # 中 clean tank 134 is a dense ^ 2 ^ clean tank 34-there is a drainage set 135. And = even two added a tube coffee, will-capacity_ on f in the container 136 containing high-water gas aqueous solution on the & Road 137 plus a room 138 to control opening. When a chemical solution

第15頁 434S6 1 五、發明說明（13) ---- 路1 3 0流入潔淨槽1 3 4内並且潔淨晶圓之後，接著將容器 136内的高壓氣體水溶液通入潔淨槽134内洗濯晶圓’然後再讓其他的化學溶液流入。如第八圖所示，係本發明應用在另一種濕式潔淨設備的實鉍例的示意圖，其中濕式潔淨設備是傳統的濕式洗淨工作台。如圖所示，具有兩個化學槽，H2_3，兩個超純水洗濯槽112-2，112-4，其中兩個化學槽分別為氫氟酸槽11 2-1與SCI槽11 2-3。每個槽112各有—個管路114通入’比如氫氟酸槽11 2-1就經由管路1 Hi通入氫氟酸。機械手臂夾住晶圓1 0 0放到超純水洗濯槽11 2 — 2中洗濯。在本實施例中’只需要在超純水洗濯槽1丨2_2，n 2 —4通入高壓超純水’超純水再加上高壓氣體可以達到更好的洗濯效果 ’更少的微粒吸附，且增加移除微粒的能力。本發明除了應用在傳統的濕式洗淨工作台上以及單槽式洗淨機台之外，可以應用在任何的濕式潔淨機台，例如應用在喷洗式化學洗淨機，刷洗機（scrubber )，以及喷射系統（jet system )等各種濕式潔淨設備。因為各種濕式潔淨機台都需要使用超純水洗濯，，以本發明取代傳統的超純水洗濯可以得到更好的效果。此外，本發明很適合用在氫氟酸蝕刻後的製程，因為敷氟酸蝕刻之後會因氧化矽被蝕刻掉而產生許多微粒’並Page 15 434S6 1 V. Description of the invention (13) ---- The circuit 130 flows into the clean tank 134 and cleans the wafer, and then the high-pressure gas solution in the container 136 is passed into the clean tank 134 to wash the crystals. Round 'and then let the other chemical solution flow in. As shown in FIG. 8, it is a schematic diagram of an example of solid bismuth applied to another type of wet cleaning equipment according to the present invention, wherein the wet cleaning equipment is a conventional wet cleaning workbench. As shown in the figure, it has two chemical tanks, H2_3 and two ultra-pure water washing tanks 112-2 and 112-4. The two chemical tanks are hydrofluoric acid tank 11 2-1 and SCI tank 11 2-3. . Each of the tanks 112 has a pipeline 114 for accessing the hydrofluoric acid tank 11 2-1 and the hydrofluoric acid via the pipeline 1 Hi. The robot arm grips the wafer 100 and places it in the ultrapure water washing tank 11 2-2 for washing. In this embodiment, 'only need to wash the tank 1 with ultrapure water 1 丨 2_2, n 2-4 pass high pressure ultrapure water' ultrapure water plus high pressure gas can achieve better cleaning effect 'Fewer particles adsorption And increase the ability to remove particles. The present invention can be applied to any wet-type cleaning machine except the conventional wet-type cleaning workbench and single-tank type cleaning machine, such as spray-type chemical cleaning machine, brushing machine ( scrubber), and various wet cleaning equipment such as jet system. Because various wet-type cleaning machines need to be washed with ultrapure water, replacing the traditional ultrapure water with the present invention can achieve better results. In addition, the present invention is very suitable for use in the process after hydrofluoric acid etching, because after the application of hydrofluoric acid, a lot of particles are generated due to the etching of silicon oxide ’and

第16頁 434661 ^ 五、#明說明（14) 且微粒很容易黏回裸矽。而在氫氟酸蝕刻之後我們施以高壓水形成氣泡層的方式，一方面裸矽表面形成氣泡保護層，一方面微粒被氣泡帶離晶圓表面，然後經由溢流（ overflow )帶走’微粒就沒有機會再黏回去。所以氳氟酸蝕，之後就不用任何的SCI潔淨。這表示在氫氟酸蝕刻後的製程，本發明可以是—種較佳的潔淨製程。 h I ^者’在閘極氧化層前的清洗中，對於潔淨度的要求矣ί =格’原生氧切，微粒，肖金屬離子是不能在晶圓在π二Ϊ ’並且晶圓表面要有極高的平整度。本發明應用前會:刻氧化"化鶴，較估 . +石夕日日圓表面產生粗糙面’平整度子乂猛。另外，由於沒有不會有污染。也因此不需m有金屬離子的產生，也。 +而要巧水處理，也沒有化學物殘留洗滌：：ό i T明可以應用在光阻的清洗。由於本發明的般光Μ岡：水，光阻並不會被蝕刻掉，所以可以用在一又九阻圖案的潔淨。方法;上面所敘述，本發明提供—種晶圓潔淨的裝置與化石夕，石^防止祕粒再附著於晶圓上，同時也不會姓刻氧產生今I=ί，光阻。另外，本發明的晶圓潔淨製程不會 ’微粒污染。再者，本發明可以應用在噴洗 434S61 五、發明說明（15) ;化學t淨機’刷洗機’以及脅射系統等各種濕式潔淨設備。此外，本發明的潔淨方法不需要使用化學品就可以有效的控制氮氣酸钱刻製程之後高微粒的問題以及避免微粒回沾。另外，本發明的成本低，不需要污水處理，也沒有化學物殘留。再者，因為本發明的潔淨方法不會對光阻產生傷害’本發明可以應用在光阻清洗。以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍内。Page 16 434661 ^ V. # 明说明（14） And the particles can easily stick back to the bare silicon. After the hydrofluoric acid etching, we apply high-pressure water to form a bubble layer. On the one hand, a bubble protective layer is formed on the surface of the bare silicon. On the other hand, the particles are taken away from the wafer surface by the bubbles, and then the particles are taken away by the overflow. There is no chance to stick back. So the fluorinated acid is etched, and afterwards it is not cleaned with any SCI. This means that after the hydrofluoric acid etching process, the present invention can be a better clean process. In the cleaning before the gate oxide layer, the requirements for cleanliness are not equal to the 'primary oxygen cutting, particulates, and metal ions cannot be on the wafer at π' and the wafer surface must have Extremely high flatness. Before the application of the present invention, it will be engraved and oxidized " chemical crane, compared with the estimate. + Shi Xi Japanese yen surface produces a rough surface 'flatness. In addition, since there is no pollution, there is no pollution. It is therefore not necessary for m to generate metal ions, either. + While water treatment is required, there is no chemical residue. Washing :: i can be used for photoresist cleaning. Since the general light M of the present invention: water, the photoresist will not be etched away, so it can be used for cleaning in a nine-nine-resistance pattern. Method; As described above, the present invention provides a device for cleaning wafers and fossils. Stones prevent the secret particles from re-attaching to the wafer, and at the same time, they do not have the last name of oxygen. In addition, the wafer cleaning process of the present invention does not cause particulate contamination. Furthermore, the present invention can be applied to various wet cleaning equipment such as spray cleaning 434S61 V. Description of the invention (15); chemical t cleaning machine 'brushing machine' and threatening system. In addition, the cleaning method of the present invention can effectively control the problem of high particles after the nitrogen acid etching process without using chemicals, and avoid the return of particles. In addition, the cost of the present invention is low, no sewage treatment is required, and no chemicals remain. Furthermore, because the cleaning method of the present invention does not cause damage to the photoresist ', the present invention can be applied to photoresist cleaning. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application.

第18頁Page 18

Claims

434661 六'申請專利範圍 1. 一種晶圓潔淨製程中防止微粒再附著之裝置，該裝置至少包含：一容器，其内含已溶解氣體之高壓水；一潔淨槽，係用以洗淨晶圓的地方；及一管路，係用以連接該容器與該潔淨槽，使得該容器内的該高壓水通入該潔淨槽後，在晶圓以及微粒的表面形成多數個氣泡，其中靠近該晶圓的微粒會被氣泡推離該晶圓的表面，而已經離開該晶圓表面的微粒會因為氣泡之間的斥力而不會回沾到該晶圓的表面上。 2. 如申請專利範圍第1項之裝置，其中上述之高壓水的壓力大小約為一到五大氣壓。 3. 如申請專利範圍第1項之裝置，其中上述之溶解氣體係選自於由空氣，02，C02，及N2所組成的族群元素。 4. 如申請專利範圍第1項之裝置，在該管路上更包含一閥，用以控制該管路的開關狀態。 5. 如申請專利範圍第1項之裝置，在該潔淨槽上更包含一（出風口。 6.如申請專利範圍第1項之裝置，更包含以超音波震盪位於該潔淨槽内之該高壓水溶液。434661 Six 'application patent scope 1. A device for preventing the re-attachment of particles in the wafer cleaning process, the device includes at least: a container containing high-pressure water of a dissolved gas; a cleaning tank for cleaning the wafer And a pipeline for connecting the container to the clean tank, so that after the high-pressure water in the container passes through the clean tank, a plurality of bubbles are formed on the surface of the wafer and the particles, which are close to the crystal The round particles will be pushed away from the surface of the wafer by the bubbles, and the particles that have left the surface of the wafer will not stick back to the surface of the wafer due to the repulsive force between the bubbles. 2. For the device in the scope of patent application, the pressure of the high-pressure water is about one to five atmospheres. 3. The device according to item 1 of the patent application range, wherein the above-mentioned dissolved gas system is selected from the group consisting of air, 02, C02, and N2. 4. If the device in the scope of the patent application is the first item, a valve is further included on the pipeline to control the switching state of the pipeline. 5. If the device in the scope of the patent application is applied for, the clean tank includes an air outlet. 6. If the device in the scope of the patent application is applied, the high pressure is located in the clean tank with ultrasonic vibration. Aqueous solution.

第19頁 4 3 4 6 6 1 六、申請專利範圍 7. 如申請專利範圍第1項之裝置，當應用在單槽式洗淨機台上更包含多數個容器用以盛裝不同的化學洗淨溶液。 8. 如申請專利範圍第7項之裝置，更包含多數個管路用以將該多數個容器内之該化學洗淨溶液通入該潔淨槽内。 9. 如申請專利範圍第1項之裝置，當應用在喷洗式化學洗淨機上更包含多數個容器用以盛裝不同的化學洗淨溶液。 1 0.如申請專利範圍第9項之裝置，更包含多數個管路用以將該多數個容器内之該化學洗淨溶液通入該潔淨槽内。 1 1.如申請專利範圍第1項之裝置，當應用在濕式洗淨工作台上更包含多數個潔淨槽用以盛裝不同的化學洗淨溶液。 1 2,如申請專利範圍第1項之裝置，係應用在刷洗機，或喷射系統中的洗濯過程。 13. 一種晶圓潔淨製程中防止微粒再附著之裝置，該裝置至少包含：一容器，其内含已溶解氣體之高壓水，該高壓水之壓力大小約為一到五大氣壓； —潔淨槽，係以該高麼水洗淨晶圓的地方；Page 19 4 3 4 6 6 1 6. Application scope of patent 7. For the device of scope 1 of the patent application, when applied to the single-tank washing machine, it contains a large number of containers for different chemical cleaning. Solution. 8. If the device in the scope of patent application No. 7 further includes a plurality of pipes for passing the chemical cleaning solution in the plurality of containers into the clean tank. 9. As for the device in the scope of patent application, when it is applied to the spray-type chemical cleaning machine, it contains a plurality of containers for containing different chemical cleaning solutions. 10. The device according to item 9 of the scope of patent application, further comprising a plurality of pipes for passing the chemical cleaning solution in the plurality of containers into the clean tank. 1 1. As for the device in the scope of the patent application, when it is applied to a wet cleaning workbench, it contains a plurality of cleaning tanks to hold different chemical cleaning solutions. 1 2. The device of item 1 in the scope of patent application is a washing process applied in a scrubber or spray system. 13. A device for preventing the re-attachment of particles in a wafer cleaning process, the device includes at least: a container containing high-pressure water of a dissolved gas, the pressure of the high-pressure water is about 1 to 5 atm; The place where the wafer is washed with the high water;

第20頁 4 346 6 1 六、申請專利範圍一排液口，係位診該潔淨槽上；一管路，係用以連接該容器與該潔淨槽，使得該容器内的該高壓水通入該潔淨槽後，在晶圓以及微粒的表面形成多數個氣泡，其中靠近該晶圓的微粒會被氣泡推離該晶圓的表面，而已經離開該晶圓表面的微粒會因為氣泡之間的斥力而不會回沾到該晶圓的表面上；及一閥位於該管路上，係用以控制該管路的開關狀態。 14. 如申請專利範圍第1 3項之裝置，其中上述之溶解氣體係選自於由空氣，02，C02，及N2所組成的族群元素。 15. 如申請專利範圍第1 3項之裝置，更包含以超音波震盪位於該潔淨槽内之該高壓水溶液。 16. 如申請專利範圍第1 3項之裝置，當應用在單槽式洗淨機台上更包含多數個容器用以盛裝不同的化學洗淨溶液。 17. 如申請專利範圍第1 6項之裝置，更包含多數個管路用以將該多數個容器内之該化學洗淨溶液通入該潔淨槽内。 18. 如申請專利範圍第1 3項之裝置，當應用在喷洗式化學洗淨機上更包含多數個容器用以盛裝不同的化學洗淨溶液。Page 20 4 346 6 1 6. The scope of patent application: a row of liquid outlets is located on the clean tank; a pipeline is used to connect the container with the clean tank so that the high-pressure water in the container can pass in After the clean tank, a plurality of bubbles are formed on the surface of the wafer and the particles. The particles near the wafer will be pushed away from the surface of the wafer by the bubbles, and the particles that have left the surface of the wafer will be separated by the bubbles. Repulsive force without sticking back to the surface of the wafer; and a valve on the pipeline is used to control the on-off state of the pipeline. 14. The device according to item 13 of the scope of patent application, wherein the above-mentioned dissolved gas is selected from the group consisting of air, 02, C02, and N2. 15. The device according to item 13 of the scope of patent application, further comprising ultrasonically vibrating the high-pressure aqueous solution located in the clean tank. 16. If the device in the scope of patent application No. 13 is applied, when it is applied to a single tank washing machine, it contains a plurality of containers for containing different chemical cleaning solutions. 17. For example, the device under the scope of patent application No. 16 further includes a plurality of pipes for passing the chemical cleaning solution in the plurality of containers into the clean tank. 18. If the device in the scope of patent application No. 13 is applied, when it is applied to a spray-type chemical cleaning machine, it contains a plurality of containers for containing different chemical cleaning solutions.

第21頁 434661 六、申請專利範圍 19. 如申請專利範圍第1 8項之裝置，更包含多數個管路用以將該多數個容器内之該化學洗淨溶液通入該潔淨槽内。 20. 如申請專利範圍第1 3項之裝置，當應用在濕式洗淨工作台上更包含多數個潔淨槽用以盛裝不同的化學洗淨溶液。 21. 如申請專利範圍第1 3項之裝置，係應用在刷洗機，或喷射系統中的洗濯過程。 22. 一種晶圓潔淨製程中防止微粒再附著之方法，該方法至少包含：提供一容器，一潔淨槽，與一管路，其中該管路係用以連接該容器與該潔淨槽；在該容器内提供已溶解氣體之高壓水；及將該容器内之該高壓水通入該潔淨槽，使得該高壓水在該潔淨槽中晶圓以及微粒的表面形成氣泡，其中靠近該晶圓的微粒會被氣泡推離該晶圓的表面，而已經離開該晶圓表面的微粒會因為氣泡之間的斥力而不會回沾到該晶圓的表面上。 2 3.如申請專利範圍第2 2項之方法，其中上述該高壓水之壓力大小約為一到五大氣壓。Page 21 434661 6. Scope of patent application 19. For the device of scope 18 of the patent application, it also includes a plurality of pipes for passing the chemical cleaning solution in the plurality of containers into the clean tank. 20. For the device in the scope of patent application No. 13 when applied to a wet cleaning workbench, it contains a plurality of cleaning tanks to hold different chemical cleaning solutions. 21. The device as claimed in item 13 of the scope of patent application is a washing process applied to a scrubber or spray system. 22. A method for preventing re-attachment of particles in a wafer cleaning process, the method at least comprising: providing a container, a clean tank, and a pipeline, wherein the pipeline is used to connect the container and the clean tank; A high-pressure water of dissolved gas is provided in the container; and the high-pressure water in the container is passed into the clean tank, so that the high-pressure water forms bubbles on the surface of the wafer and particles in the clean tank, and the particles close to the wafer The bubbles will be pushed away from the surface of the wafer, and the particles that have left the surface of the wafer will not return to the surface of the wafer due to the repulsion between the bubbles. 2 3. The method according to item 22 of the scope of patent application, wherein the pressure of the high-pressure water is about one to five atmospheres.

第22頁 434661 六、申請專利範圍 24. 如申請專利範圍第22項之方法，其中上述之溶解氣體係選自於由空氣，02，C02，及N2所組成的族群元素。 25. 如申請專利範圍第22項之方法，在該管路上更包含一閥，用以控制該管路的開關狀態。 26. 如申請專利範圍第22項之方法，在該潔淨槽上更包含一排液口。 27. 如申請專利範圍第22項之方法，更包含以超音波震盪位於該潔淨槽内之該高壓水溶液。 28. 如申請專利範圍第22項之方法，當應用在單槽式洗淨機台上更包含多數個容器用以盛裝不同的化學洗淨溶液。 29. 如申請專利範圍第28項之方法，更包含多數個管路用以將該多數個容器内之該化學洗淨溶液通入該潔淨槽内。 30. 如申請專利範圍第22項之方法，當應用在喷洗式化學 I 洗淨機上更包含多數個容器用以盛裝不同的化學洗淨溶液。 31. 如申請專利範圍第3 0項之方法，更包含多數個管路用Page 22 434661 VI. Application scope of patent 24. For the method of the scope of application for patent No. 22, the above-mentioned dissolved gas is selected from the group consisting of air, 02, C02, and N2. 25. According to the method of claim 22 in the scope of patent application, the pipeline further comprises a valve for controlling the on-off state of the pipeline. 26. If the method according to item 22 of the patent application scope, the cleaning tank further comprises a liquid discharge port. 27. The method according to item 22 of the scope of patent application, further comprising ultrasonically oscillating the high-pressure aqueous solution located in the clean tank. 28. For the method in the scope of patent application No. 22, when applied to a single-tank washing machine, it also contains a plurality of containers for containing different chemical cleaning solutions. 29. The method according to item 28 of the scope of patent application, further comprising a plurality of pipes for passing the chemical cleaning solution in the plurality of containers into the clean tank. 30. If the method in the scope of patent application is No. 22, when it is applied to the spray-washing chemical I washing machine, it contains a plurality of containers for containing different chemical cleaning solutions. 31. If the method in the 30th scope of the patent application is applied, it also includes a majority of pipelines.

第23頁 434661 六、申請專利範圍以將該多數個容器内之該化學洗淨溶液通入該潔淨槽内。 32.如申請專利範圍第22項之方法，當應用在濕式洗淨工作台上更包含多數個潔淨槽用以盛裝不同的化學洗淨溶液 33. 如申請專利範圍第22項之方法，係應用在刷洗機，或喷射系統中的洗濯過程。 3 4.—種氫法係將一晶包含：提供一以連接該容在該容力大小約為氣，〇2，C〇2 將該容在該潔淨槽該晶圓的微晶圓表面的圓的表面上以超音氟酸蝕刻製程之後的晶圓潔圓放在一單槽式洗淨機台上淨方法’，該潔淨方洗淨，該方法至少容器，一器與該潔器内提供 —到五大，及N2所器内之該中該晶圓粒會被氣微粒會因潔淨槽，與淨槽；已溶解氣體氣壓，其中組成的族群高壓水通入以及微粒的泡推離該晶為氣泡之間一管路’其中該管路係用之高壓該溶解元素；該潔淨表面形圓的表的斥力水，該高壓水之壓氣體係選自於由空槽，使得該高壓水成氣泡，其中靠近面，而已經離開該而不會回沾到該晶 ;及波震盪位於該潔淨槽内之該高壓水溶液。Page 23 434661 VI. Scope of patent application To pass the chemical cleaning solution in the plurality of containers into the clean tank. 32. As the method of applying for the scope of patent application No. 22, when applied to a wet cleaning workbench, it contains a plurality of cleaning tanks for containing different chemical cleaning solutions. 33. For the method of applying for the scope of patent application No. 22, Application in scrubbing machine, or spray process in spray system. 3 4.—A hydrogen method system includes a crystal: providing a capacitor for connecting the capacitor to the capacitor with a capacity of approximately 0, 2 and C0 to the capacitor on the microwafer surface of the wafer in the clean tank. The method of cleaning wafers on a round surface after the etching process of supersonic acid is placed on a single-tank cleaning machine. The cleaning method is to clean at least a container, a device, and the cleaner. Provided—to the top five, and the wafer in the N2 vessel will be trapped by gas particles due to the clean tank and the clean tank; the gas pressure of the dissolved gas, where the high-pressure water of the group and the bubble of the particles are pushed away from the The crystal is a pipeline between the bubbles, where the pipeline is used for the high pressure of the dissolved element; the clean surface of the round surface of the repulsive water, and the pressure system of the high pressure water is selected from an empty groove, so that the high pressure water becomes Bubbles, which are close to the surface and have left the crystal without returning to the crystal; and waves oscillate the high pressure aqueous solution in the clean tank.

第24頁 434661 六、申請專利範圍 35. 如申請專利範圍第34項之方法，其中上述之溶解氣體係選自於由空氣，02，C02，及M2所組成的族群元素。 36. 如申請專利範圍第34項之方法，在該管路上更包含一閥，用以控制該管路的開關狀態。 37. 如申請專利範圍第34項之方法，在該潔淨槽上更包含一排液口。Page 24 434661 6. Scope of patent application 35. For the method of applying for the scope of patent No. 34, the above-mentioned dissolved gas is selected from the group consisting of air, 02, C02, and M2. 36. According to the method of claim 34, a valve is further included on the pipeline to control the on-off state of the pipeline. 37. If the method according to the scope of the patent application is No. 34, the cleaning tank further comprises a liquid discharge port.

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