! f 4 2 6 9 ο 5 五、發明說明（i) 5 -1發明領域： 種半導體晶片的晶邊清洗方式。特別 液的過程時1用其竹刃疋在塗佈光阻 。 j用再未凡全鉍乾之狀態’而進行晶邊清洗 5 - 2發明背景 #日是半導體晶圓廠中常使用到的技術之-。- 光阻液塗佈後，並完全旋乾以成光阻膜。之 在=須以溶劑強力沖?先，藉以除去光阻膜》並 而僂 可以繼續處理晶片，如黃光及蝕刻製程。 平台進行':如是定式喷頭配合旋轉 晶片；再來如第- Β圖，以約26秒長時^ 紅=〇得至15:液完全乾燥而形成光阻膜。接著如第：C圖 間共觸秒至旋乾晶片；此過程之總時 =主㈣。洗出之晶邊約2 5至3.5随。 。造成盔η:方法所清洗的面積及部位有-定的限制 率=ΐϊί=!清洗的範31，於是會降低產品的良 。&审#秘〇寬或改變清洗的範圍，則只好更新機台 〇χ 台設備須耗資較大且須花時間進行，且增f 4 2 6 9 ο 5 5. Description of the invention (i) 5 -1 Field of invention: A method for cleaning crystal edges of semiconductor wafers. In the special liquid process, use its bamboo blade to coat the photoresist. j Crystalline edge cleaning in a state of being completely dry with no bismuth ’5-2 Background of the Invention #Day is one of the techniques often used in semiconductor wafer fabs. -After the photoresist is applied, it is completely spin-dried to form a photoresist film. The first step is to use a strong solvent to remove the photoresist film first, and then the wafer can continue to be processed, such as yellow light and etching processes. The platform is carried out: if the fixed nozzle is used with the rotating wafer; as shown in Figure -B, it takes about 26 seconds ^ red = 0 to get 15: the liquid is completely dried to form a photoresist film. Then, as shown in the figure: C, a total of two seconds are touched to spin the wafer; the total time of this process = master. The washed crystal edge is about 25 to 3.5. . Causes the helmet η: The area and parts cleaned by the method have a fixed limit rate = ΐϊί =! Cleaning range 31, so the quality of the product will be reduced. & audit # wide range or change the scope of cleaning, then had to update the machine 〇χ equipment must be costly and time-consuming, and increase
第4頁 42s9〇5 五、發明說明（2) 加製造成本。因此 以改善上述之問題 亟待一新製程方法及其結構之提出， 並改善元件品質及其製造效率。 5-3發明目的及概述： 鑒於 多缺點。 方法。 上述之發明背景中，傳統的晶邊清洗所產生的諸 本發明提供了 一種使用於半導體晶月之晶邊清洗 本發明第一實施例 液於晶片表面；接著將 置；準確以第一時間之 ’以清洗晶片，在同一 清洗 時間 其中 而第 著將 裝置之平台 之第一速度 的第一速度 二實施例之 晶片裝置於 ，以清 旋轉晶 大於第二速度 步驟： 晶邊清 之步驟至少包 晶片裝置於晶 第一速度旋轉 平台上，再以 洗晶片；在同 邊清洗裝置之 間之第一速度旋轉晶邊 同一 以清 轉晶 行第 於第 平台上，再 洗晶片；在 邊清洗裝置 以一第 (5J —— 之平台 速度之清洗及第 速度且第一時間 首先塗 洗裝置 清洗裝 二速度 台上， ，以清 一速度 小於第 且第一 佈一光 之平台 置之平 旋轉晶 再以第 洗晶片 之清洗 二時間 括：首 邊清洗 晶邊清 一第二 '— 台 平台， 時間小 ί1且液於 裝置； 台，以 邊清洗 二時間 »同時 。其中 裝置之 洗裝置 速度旋 上，再 以清洗 於第二 晶片表 準確以 清洗晶 裝置之 之第一 更包含 的第一 轉晶 以第 晶片 時間 面； 片；Page 4 42s905. V. Description of the invention (2) Add manufacturing cost. Therefore, in order to improve the above problems, it is urgent to propose a new process method and structure, and improve the quality of components and their manufacturing efficiency. 5-3 Purpose and summary of the invention: In view of many shortcomings. method. In the above background of the invention, the inventions produced by conventional crystal edge cleaning provide a method for cleaning crystal edges of semiconductor wafers according to the first embodiment of the present invention on the surface of the wafer; 'To clean the wafer, at the same cleaning time, the first device of the first speed of the first speed of the platform of the device is the second embodiment of the wafer device, and the rotation of the crystal is larger than the second speed. The wafer device rotates the platform on the first speed of the crystal, and then the wafer is washed; the crystal is rotated at the first speed between the same-side cleaning devices, and the wafer is rotated on the second platform to clean the wafer; The first speed (5J —— the platform speed of the cleaning and the first speed and the first time the first cleaning and cleaning device is installed on the two speed stage, to clear a speed lower than the first and the first light-plated platform placed flat rotating crystal Then, the second cleaning time of the first washed wafer is included: the first side is cleaned, the crystal side is cleaned, and the second is a platform, the time is less than 1 and the liquid is in the device; Wash two times »while washing apparatus wherein the rotating speed of the device on the wafer and then to the second table to the first rotation accuracy of the crystal grain cleaning means further comprises first to the second surface of the wafer cleaned in time; The sheet;
第5頁 1 4 2 6 9 ο 5 五、發明說明（3) 本發明之一目的可得到比一般傳統晶邊清洗法較為更 寬的寬度，比起傳統晶邊清洗的方法，約加寬為〇 . 7至j 0 mm。而本發明的另一目的是在不移動機台的清洗喷頭條 件下，進行晶邊清洗。 ^ 為讓本發明之上述說明與其他目的，特徵和優點更能 明顯易懂’下文特列出較佳實施例並配合所附圖式，作詳 細說明。 5-4圖式簡單說明： 第一圖式習知之晶邊清洗流程；及 第二圖式本發明之晶邊清洗流程。 5 - 5發明詳細說明： 以下是本發明的描述。本發明的描述會先配合以一示 範結構做參考。一些變動和本發明的優點會在之後描述。 製造的較佳方法會於隨後討論。另一不對稱的實施例會隨 著在製造此實施例的製程流程的變動而做描述。 再者’雖然本發明以數個實施例來說明，但這些描述 不會限制本發明的範圍或應用。而且，雖然這些例子使用 晶邊清洗裝置’應該明瞭的是主要的部份可能以相關的部Page 5 1 4 2 6 9 ο 5 V. Description of the invention (3) An object of the present invention is to obtain a wider width than the conventional traditional crystal edge cleaning method. Compared with the traditional crystal edge cleaning method, the width is about 0.7 to j 0 mm. Yet another object of the present invention is to perform crystal edge cleaning without moving the cleaning nozzle of the machine. ^ In order to make the above description and other objects, features and advantages of the present invention more comprehensible ', the preferred embodiments are described in detail below in conjunction with the accompanying drawings. 5-4 is a brief description of the first diagram of the conventional crystal edge cleaning process; and the second diagram of the crystal edge cleaning process of the present invention. 5-5 Detailed Description of the Invention: The following is a description of the invention. The description of the present invention will first be made with reference to an exemplary structure. Some variations and advantages of the invention will be described later. The preferred method of manufacture will be discussed later. Another asymmetric embodiment will be described as the process flow of manufacturing this embodiment changes. Furthermore, although the present invention is illustrated by several embodiments, these descriptions do not limit the scope or application of the present invention. And, although these examples use the crystal edge cleaning device ’it should be clear that the main part may be related parts
426905 五、發明說明（4) 份取代β因此，本發明的裝置不會限制結構的說明。這些 裝置包括證明本發明和呈現的較佳實施例之實用性和應g 性。 本發明第厂實施例的晶邊清洗是藉設備之固定式喷頭 ，配合晶邊清洗裝置之旋轉平台進行，如第二圖所式。先 如第二A圖，以光阻液塗佈晶片表面，趁其未完全乾成光 阻膜時，繼續:厂步驟；再來如第二B圖，以約5至8秒短 時間，4000轉高速度旋轉使得光阻液完全乾燥而形成光阻 膜。接著如第二C圖，以60G至1 500轉之低速旋轉，清洗晶 邊；最後如第二D圓再以約大於8秒的3〇〇〇轉之高速清洗並 旋乾晶片，此過程之總時間共約6 0秒至7 〇秒。洗出之晶邊 較習傳統洗出之晶邊多約〇. 7至1. 0mm之寬度。 而本發明第二實施例：先如第二A圖，以光阻液塗佈 晶片表面，趁其未完全乾成光阻膜時，繼續下一步驟；再 來如第二B圖，以約5至8秒短時間，4〇〇〇轉高速度旋轉使 得光阻液完全乾燥而形成光阻膜。接著如第二c圖，以6〇〇 至1 500轉之低速旋轉，清洗晶邊；最後如第二D圖再以約 大於8秒的3000轉之高速清洗。且第二c圖之低速旋轉可與 第二D圖之高速旋轉結合，藉重覆數次， 可以達最好的晶邊清洗效果。 兩人以上 本發明是在塗佈光阻液的過程時，利用其未完全旋乾 之狀態，而進行部份旋乾再進行晶邊清洗。故可得到比一 般傳統晶邊清洗法較為更寬的寬纟，約加寬為〇 7至1〇龍 ’且並不影響光阻膜的厚薄程度。因其利用光阻膜較㈣426905 V. Description of the invention (4) Substitute β Therefore, the device of the present invention does not limit the description of the structure. These devices include proof of the practicality and applicability of the present invention and the preferred embodiments presented. The crystal edge cleaning in the embodiment of the present invention is carried out by the fixed nozzle of the equipment and the rotating platform of the crystal edge cleaning device, as shown in the second figure. First, as shown in Figure A, coat the surface of the wafer with a photoresist solution, while it is not completely dried to form a photoresist film, continue: factory steps; then like Figure B, use a short time of about 5 to 8 seconds, 4000 Turn it at a high speed to make the photoresist liquid completely dry to form a photoresist film. Then, as shown in the second figure C, rotate at a low speed of 60G to 1,500 revolutions to clean the crystal edges; finally, as in the second D circle, clean and spin dry the wafer at a high speed of about 3000 revolutions greater than about 8 seconds. The total time is about 60 seconds to 70 seconds. The width of the crystal edge washed out is about 0.7 to 1.0 mm more than the conventional crystal edge washed out. The second embodiment of the present invention: firstly coat the surface of the wafer with a photoresist liquid as shown in FIG. 2A, and continue to the next step while it is not completely dried into a photoresist film; In a short time of 5 to 8 seconds, the high-speed rotation at 4,000 turns makes the photoresist liquid completely dry to form a photoresist film. Then, as shown in the second figure c, rotate at a low speed of 600 to 1,500 rpm to clean the crystal edges; finally, according to the second figure D, clean at a high speed of 3000 rpm for about 8 seconds. In addition, the low-speed rotation of the second c diagram can be combined with the high-speed rotation of the second D diagram. By repeating it several times, the best crystal edge cleaning effect can be achieved. Two or more people In the process of applying the photoresist liquid, the present invention uses the state of incomplete spin-drying to partially spin-dry and then crystal edge cleaning. Therefore, a wider width than that of the conventional crystal edge cleaning method can be obtained, and the widening is about 7 to 10 dragon's without affecting the thickness of the photoresist film. Because it uses a photoresist film
U D 五、發明說明（5) '---- 時，其光阻膜之膨潤（Sweinng)效果較大，所使用之清洗 溶劑較易滲入，產生較好的效果β而洗出較寬的晶邊。 、本發明的另一好處是在不移動機台的喷頭條件下， 進行a曰邊清洗。同時亦適用於各式光阻液，如PGMEA、 PGME溶液形成的光阻膜之晶邊清洗。 以上所述僅為本發明之較佳實施例而已，並非用以限 定本發明之申請專利範圍；凡其它未脫離本發明所揭示之 精神下所完成之等效改變或修飾，均應包含在下述之申請 專利範圍内。UD V. Description of the invention (5) '----, the Sweinng effect of the photoresist film is greater, the cleaning solvent used is more easily penetrated, produces a better effect β, and a wider crystal is washed out side. 2. Another advantage of the present invention is that side cleaning is performed under the condition that the nozzle of the machine is not moved. At the same time, it is also suitable for crystal edge cleaning of photoresist films formed by various photoresist solutions, such as PGMEA and PGME solutions. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application.