蛾.濟部中夹槔举扃員工消費合作社印製 Α74216Τ6 Β7 發明説明（） 《發明之技術範圍》 本發明是有關一種電感耦合型電漿化學蒸氣沈積裝 置。更詳細的説，是有關一種能防止至少有一部份構成為 反應室的介電屏，所產生不純物污染的電感耦合型電漿化 學蒸氣沈積裝置。 《發明之背景〉〉 曰本專利公開公報（專利申請平7_6〇7〇4)，已公開 揭示可以形成薄膜的電感耦合型電漿化學蒸氣沈積裝置。 俱，該公報記载的傳統電感耦合型電漿化學蒸氣沈積裝 置，係由可加RF電力的環狀天線及連接於該天線而設置的 介電屏，和具有該介電屏，並能維持氣密的空室，與為將 該空室内部的被加工物加熱而設置的放置台，及將上述空 室内部排氣的排氣裝置、以及可定量供應给上述空室，至 少2種水應氣的供給裝置等所構成。 如此的電感耦合型電漿化學蒸氣沈積裝置，其動作如 下：當環狀的天線加高周波時，連接於該天線而設置的石 英介電屏之相對侧，即在空室的内部形成電漿。而在室内 側也設有放置台，將積疊在該放置台上面的被加工物加 熱。又，空室内部係以排氣裝置排氣使呈真空，並在該命 室内以氣ft絲裝置，至少定量健兩_反應氣體广 但是，上述電感耦合型電漿化學蒸氣沈積裝置，其絕 ί 含氧的石英等材質構成，於薄膜蒸氣沈積時'， 會因為電漿而導致石英等介電屏老化。因此，由於石英的 _______ 4 本紙乐又度適用中國國家標準（CNS ) Α4規格（21〇χ297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 4 21676 1 ___B7 五、發明说明（） 介電屏流入氧及不純物，使空室内形成薄膜的品質，很不 好的問題。_ 又，傳統的電感耦合型電漿化學蒸氣沈積裝置，其供 應氣體的氣體加入口，並不設在真空反應室的中央，而設 在侧面，使氣體的加入不能全面均勻，致不能形成高密度 且均勻的電漿。 《發明要解決的課題》 如上述的説明，本發明的目的即在遮斷由電感耦合型 電漿化學蒸氣沈積裝置的絕緣電屏流入氧或不純物，以提 供可製造具有優良薄膜特性的一種電感耦合型電漿化學沈 積裝置。 《解決課題的方法》 . 因此，本發明係為解決上述種種問題而達成者。 本發明的目的係提供一種電感稿合型電漿化學蒸氣沈 積裝置，係至少在形成反應室一部份的絕緣電屏表面，蒸 氣沈積不含氧的‘梦而達成者。 電感耦合型電漿化學蒸氣沈積裝置，係由至少有—部 份被介電屏圍繞著的内部空間做為反應室，在上述介電屏 反應至内側的表面，具有不含氧的矽層，與在反應室的内 部空間，導入工程氣體的設施；和與上述反應室外的上述 介電屏鄰接，設置可施加RF電力的天線；及將上述天線與 RF電源連結的設施；以及，為將上述反應室内部空間的被 加工物加熱，而設置的放置台；以及，祕上述反應室内 部空間的氣體排出的排氣設施等所構成。又，上述不含氡 本紙張尺度適用中國國家標準（CNS) M規格（2丨0 x 297公褒） fel—^ί TILL —LILP ^^^1· —^L - ^ife— ^ ^ 广.-^π (請先閲讀背面之注意事項再填寫本頁jMoth. Printed in the Ministry of Economic Affairs, printed by the employee consumer cooperative. A74216T6 B7 Invention Description () "Technical Scope of the Invention" The present invention relates to an inductively coupled plasma chemical vapor deposition device. More specifically, it relates to an inductively-coupled plasma-chemical vapor deposition apparatus capable of preventing impurities contaminated by a dielectric screen formed at least in part as a reaction chamber. "Background of the Invention"> This Japanese Patent Publication (Patent Application No. Hei 7-6007) has disclosed an inductively-coupled plasma chemical vapor deposition device capable of forming a thin film. In general, the conventional inductively-coupled plasma chemical vapor deposition device described in the publication includes a loop antenna capable of adding RF power and a dielectric screen connected to the antenna, and the dielectric screen is capable of maintaining the same. An airtight empty room, a placement table provided for heating the object to be processed inside the empty room, an exhaust device for exhausting the inside of the empty room, and a quantitative supply to the empty room, at least two kinds of water It consists of a gas supply device. Such an inductively-coupled plasma chemical vapor deposition device operates as follows: When a loop-shaped antenna raises the frequency, the opposite side of the stone dielectric screen provided in connection with the antenna, that is, a plasma is formed inside the hollow chamber. A placing table is also provided on the indoor side to heat the workpieces stacked on the placing table. In addition, the interior of the empty chamber is evacuated by an exhaust device, and a gas ft wire device is used in the life chamber to at least quantify the two. The reaction gas is wide. However, the above-mentioned inductively coupled plasma chemical vapor deposition device ί Made of oxygen-containing quartz and other materials. When the thin film is vapor-deposited, the dielectric screen such as quartz will deteriorate due to the plasma. Therefore, because of the _______ 4 of quartz, the paper music is also applicable to the Chinese National Standard (CNS) Α4 specification (21〇χ297 mm) (Please read the precautions on the back before filling this page) Order the staff consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Printed A7 4 21676 1 ___B7 V. Description of the invention () Dielectric screen flows with oxygen and impurities, which makes the film quality in the empty room very bad. _ In addition, the traditional inductively coupled plasma chemical vapor deposition device has a gas supply port for supplying gas, which is not located in the center of the vacuum reaction chamber, but on the side. Density and uniform plasma. "Problems to be Solved by the Invention" As described above, the object of the present invention is to block the inflow of oxygen or impurities from the insulating screen of an inductively coupled plasma chemical vapor deposition device, so as to provide an inductor capable of manufacturing excellent film characteristics. Coupling type plasma chemical deposition device. "Methods for Solving the Problems". Therefore, the present invention has been made to solve the above problems. The object of the present invention is to provide an inductive type plasma chemical vapor deposition device, which is a ‘dream dreamer’ where vapor is deposited at least on the surface of an insulating screen forming part of a reaction chamber. An inductively coupled plasma chemical vapor deposition device is an internal space surrounded by at least a portion of a dielectric screen as a reaction chamber. The surface of the dielectric screen which reacts to the inside has an oxygen-free silicon layer. A facility for introducing engineering gas into the interior space of the reaction chamber; an antenna capable of applying RF power adjacent to the dielectric screen outside the reaction chamber; and a facility for connecting the antenna to an RF power source; and A placement table provided by heating the object to be processed in the inner space of the reaction chamber; and an exhaust facility for exhausting gas in the inner space of the reaction chamber. In addition, the above-mentioned paper size does not apply to the Chinese National Standard (CNS) M specification (2 丨 0 x 297 cm) fel— ^ ί TILL —LILP ^^^ 1 · — ^ L-^ ife— ^ ^ Wide. -^ π (Please read the notes on the back before filling in this page j
42i67®V A7 B7 五、發明説明（） 的矽層最好是非結晶矽層、氮化矽層、或碳化矽層等，而 上述反應氟體的導入設施，需在上述反應室至少能供應2 種定量的反應氣體。又，為得到1〇11〜1〇12cm.3的電漿密度 而將天線做成螺旋狀。 利用本發明的電感耦合型電漿化學蒸氣沈積裝置，可 獲得光感性、電傳導性、活性化能力、光束間隙（〇ptkal band gap) ’無論電氣及光學特性均優良，且均勻的非結晶 矽層，也可得到如電氣傳導性、破壞電壓、電流密度薄膜 f性均優闕⑽氮化稍，以及可制結晶粒的大小很 微細且均句的矽層。且又，可得到含有電界效果移動性， 臨界電壓等電氣特性皆優良均句的非結晶賴的薄膜電晶 體，以製造高品質的TFT-LCD。 《圖示之簡單説明》 ，，本發明的其他目的與功效，茲參照下列依附圖所作之 説明，即可得到完全的了解： 第1圖係表示本發明的電感耦合型電漿化學蒸氣沈積 裝置的較佳具體實施例的設計圖； 經濟部中央標準局貝工消費合作社印製 (請先閲讀背面之注$項再填寫本頁) 訂 弟2A圖係表示第i圖的電感耦合型電漿化學蒸氣沈積 裝置所使用天線的構造示意圖； … 第2Β圖係表示第工圖的電感鋼合型電漿化學蒸氣沈積 裝置所使用變形的天線構造示意圖； 第3圖絲示以本發明較佳實施例製造的電感揭合型 電漿化學蒸氣沈積裝置所沈積的非結晶秒層⑽尺的特性 liSel * 本紙悚尺度通州T阁阁豕標準（CNS) A4規格（210X297^17 五、發明説明（ A7 B7 421676 第4圖係表示以本發明較佳實施例製造的電感耦合型 電漿化.學蒸氣沈積裝置賴氣沈躺非結砂層之電 導特性圖； 第5圖係表示以本發明較佳實施例製造的電感耦合型 電漿化學蒸氣_裝置賴氣沈積_㈣之 隙特性圖； 第6圖係表示以本發明較佳實施例製造的電感耦合型 電漿化學^氣_裝讀蒸氣沈制微細㈣質獨之結 晶度及拉曼擴散(RamanScattering)的全幅半值卿_对融 at half maximum，FWHM)圖； 第7圖係表示以本發明較佳實施例製造的電感耦合型 電漿化學蒸氣沈積裝置所蒸氣沈積的氮化謂赃丁狀特 性圖； 第8圖係表示以本發明較佳實施例製造的電感稱合型 Ϊ =蒸氣沈積裝置所蒸氣沈積的氮化矽薄膜電流-電 壓特性圖。 《圖式中符號與名稱對照》 10 :電感耦合型電漿化學蒸氣沈積裝置 ------------,JI — c.· (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局貝工消費合作社印製 11 :真空反應室 13 :上侧扳 15Α，15Β : 〇型密封環 17 :天線 19 : RF電源 21 :破璃基板 12 14 16 18 20 22 圓筒形侧板 底板 矽層 配合箱（matching box) 放置台 排氣管 本紙張尺度適财關家縣（CNS) Α4· (2ΐβχ297公楚 421676 A7 B7 經濟部中央標準局員工消費合作社印裝 五、發明説明（ 23 :氣體儲存槽 24,25 :氣體供應管 24B，25B ·_ 噴嘴 24A，25A :環狀部 《較佳具體實施例的詳細描述》 以下參照附圖説明本發明的電感耦合型電漿化學蒸氣 沈積裝置的較佳實施例。 第1圖係表示以本發明較佳實施例製造的電感耦合型 電漿化學蒸氣沈積裝置10。該電感耦合型電漿化學蒸氣沈 積裝置10係包括真空反應室。而真空反應室丨】係由圓筒 形侧扳12，上侧板13，及底板14等構成。因為要將真空反 應室11維持完全密閉，而將圓筒形侧板12與上侧板13，及 圓筒形侧板12與底板14之間，各設有〇型密封環15入、 15B 〇 上侧扳13即當作介電屏，並以石英形成。介電屏13除 石英以^卜，也可使用可通過RF，但不能透過赤外線，如 Ah03等陶資(ceramics)的絕緣材料。 本男施例係在真空反應室〗丨内，選擇薄膜蒸氣沈積 時’為防止因介電屏⑽老化，導致氧或不純減入真空 反應鱼11，故使介電屏13的真空反應室丨丨内侧表面，具有 不含氧⑽層I6。又，不含氧⑽層祕轉結晶梦層形 其厚度約為1000A。除了非結晶梦層以外，也可使用 風化妙層，或魏々層^這綱成為本難實施例的重要 特性。 泰紙張尺度適用 (CNS)42i67®V A7 B7 V. Description of the invention () The silicon layer is preferably an amorphous silicon layer, a silicon nitride layer, or a silicon carbide layer, etc., and the above-mentioned reaction fluorine introduction facilities need to be able to supply at least 2 in the above reaction chamber. A certain amount of reactive gas. In order to obtain a plasma density of 1011 to 1012 cm.3, the antenna was spirally formed. By using the inductively-coupled plasma chemical vapor deposition device of the present invention, it is possible to obtain photosensitivity, electrical conductivity, activation ability, and beam gap (〇ptkal band gap), which is excellent in both electrical and optical characteristics and is uniform amorphous silicon. Layers can also be obtained, such as electrical conductivity, breakdown voltage, current density film f properties are excellent, nitrided slightly, and can be produced with very fine crystal grain size and uniform silicon layer. In addition, an amorphous thin film electro-crystal having excellent electrical properties such as electrical mobility, critical voltage, and the like can be obtained to manufacture a high-quality TFT-LCD. "Simple description of the diagram", other objects and effects of the present invention can be fully understood with reference to the following description made with reference to the drawings: Figure 1 shows the inductively coupled plasma chemical vapor deposition device of the present invention Design drawing of the preferred embodiment; Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the note on the back before filling this page) Order 2A shows the inductively coupled plasma of the i-th figure Schematic diagram of the structure of the antenna used in the chemical vapor deposition device; Figure 2B is a schematic diagram showing the structure of the deformed antenna used in the inductive steel-type plasma chemical vapor deposition device of the first drawing; Figure 3 shows the preferred embodiment of the present invention. Example of the characteristics of the amorphous second-layer ruler deposited by an inductive plasma-type plasma chemical vapor deposition device manufactured by Example: LiSel * This paper is a standard Tongzhou T Pavilion Pavilion Standard (CNS) A4 specification (210X297 ^ 17 V. Description of the invention (A7 B7 421676 Fig. 4 shows the conductivity characteristics of an inductively coupled plasmatization device made by a preferred embodiment of the present invention. The vapor deposition device relies on gas to lay a non-sand layer; Fig. 5 is a table FIG. 6 is a characteristic diagram of the inductively coupled plasma chemical vapor _ device lai gas deposition _ 制造 manufactured by the preferred embodiment of the present invention; FIG. 6 is a diagram showing the inductively coupled plasma chemistry manufactured by the preferred embodiment of the present invention. Gas_Reading the full-scale half-value of Raman Scattering and the crystallinity of Raman Scattering made by steam precipitation at half maximum (FWHM) diagram; Figure 7 shows the manufacturing using the preferred embodiment of the present invention Figure 8 shows the nitriding characteristics of the vapor deposition nitrided by the inductively coupled plasma chemical vapor deposition device. Figure 8 shows the inductance type manufactured by the preferred embodiment of the present invention. Current-voltage characteristics of a silicon nitride film. "Comparison of Symbols and Names in the Drawings" 10: Inductively Coupled Plasma Chemical Vapor Deposition Device ------------, JI — c. · (Please (Read the precautions on the back before filling this page.) Ordered by the Central Standards Bureau of the Ministry of Economic Affairs, printed by Shelley Consumer Cooperatives 11: Vacuum reaction chamber 13: Top 15A, 15B: 〇 Seal ring 17: Antenna 19: RF power supply 21: Broken glass substrate 12 14 16 18 20 22 Cylindrical side plate base plate Matching box (placement box) Place the exhaust pipe of this paper. Standards are suitable for Guanjia County (CNS) Α4 · (2ΐβχ297 公 楚 421676 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (23: Gas Storage tanks 24, 25: Gas supply pipes 24B, 25B · Nozzles 24A, 25A: Ring section "Detailed description of preferred embodiments" The following describes the inductively coupled plasma chemical vapor deposition apparatus of the present invention with reference to the drawings The preferred embodiment. FIG. 1 shows an inductively coupled plasma chemical vapor deposition apparatus 10 manufactured according to a preferred embodiment of the present invention. The inductively coupled plasma chemical vapor deposition apparatus 10 includes a vacuum reaction chamber. The vacuum reaction chamber is composed of a cylindrical side plate 12, an upper plate 13, a bottom plate 14, and the like. Because the vacuum reaction chamber 11 is to be kept completely sealed, the cylindrical side plate 12 and the upper side plate 13 and the cylindrical side plate 12 and the bottom plate 14 are each provided with O-ring seals 15 and 15B. The upper side 13 acts as a dielectric screen and is formed of quartz. In addition to quartz, the dielectric screen 13 can also be made of insulating materials that can pass RF but can't pass red wires, such as ceramics such as Ah03. This man's example is in the vacuum reaction chamber. When the thin film vapor deposition is selected, 'to prevent the oxygen or impurities from being reduced into the vacuum reaction fish 11 due to the aging of the dielectric screen, the vacuum reaction chamber of the dielectric screen 13 is used.丨 The inside surface has an oxygen-free rhenium layer I6. In addition, the thickness of the mysterious layer of the non-oxygen-containing layer is about 1000A. In addition to the non-crystalline dream layer, a weathering layer or a Wei layer can also be used. This class becomes an important feature of this difficult embodiment. Thai paper size applicable (CNS)
In.—t n - - - - n - n I--~~ 訂 (請先閲讀背面之注意事項再填寫本頁) A7 B7 42^β7β 五、發明説明（） 在介電屏13的上面，設有可施加RF電力的天線17，該 .天線17最好選用容易適用於大面積，RF電力分佈均勻，形 狀簡單的螺旋狀。 天線的較佳實施例係如第2A圖及第2B圖所示，為要獲 得1011〜l〇i2cm-3的電漿密度，而使用二種螺旋狀形天線的 任一種形狀。圖中17a及17a' ’係接受加Rjp電力端子，17b 為線圈。 天線Π係與配合箱18(matchingbox)耦接，而配合箱 18係與RF電源19耦接。 底板14之中央部份設有k置台·2〇。在該放置台20的上 面，放置被加工物，例如破璃基板21。底板14的一端設有 排氣管22。而放置台20與底板14應具有電氣絕緣。放置台 20應具有因為要將電漿蒸氣沈積而必備的冷卻及加熱機 能。 又，反應氣體（reactant gas)係由真空反應室11内， 由一個以上的氣體供應管供氣。本較佳實施例係在圖面上 有二個氣體供應管24,25。又，為要供給兩種以上的反應氣 體，而將多數氣體儲存槽23與供應管24,25連結。 氣體供應管2七25為使反應氣體能大面積且均勻供應起 見，須包括在真空反應室11的中央位置，形成的環狀部 24A，25A。而，環狀部24A，25A的周圍：即設有一定間隔 的多數喷嘴24B,25B。 當蒸氣沈積時，RF電力係加在螺旋狀天線，由預先選 擇的反應氣體儲存槽23供應氣體至供應管24,25。供應至氣 本紙張又度適用中國國家標準（CNS > A4規格（210X297公釐） (請先閔讀背面之注$項再填寫本頁) 經濟部中央標準局負工消費合作社印裂In.—tn----n-n I-- ~~ Order (please read the precautions on the back before filling this page) A7 B7 42 ^ β7β 5. Description of the invention () On the top of the dielectric screen 13, set There is an antenna 17 capable of applying RF power. The antenna 17 is preferably a spiral shape that is easily applicable to a large area, has a uniform RF power distribution, and has a simple shape. The preferred embodiment of the antenna is as shown in Figures 2A and 2B. In order to obtain a plasma density of 1011 to 10 cm-2, either shape of two spiral antennas is used. In the figure, 17a and 17a '′ are Rjp power terminals, and 17b is a coil. The antenna Π is coupled to a matching box 18, and the matching box 18 is coupled to an RF power source 19. The central portion of the bottom plate 14 is provided with a k-mounting platform · 20. An object to be processed, such as a broken glass substrate 21, is placed on the placing table 20. An exhaust pipe 22 is provided at one end of the bottom plate 14. The placing table 20 and the bottom plate 14 should have electrical insulation. The placing table 20 should have cooling and heating functions necessary for plasma vapor deposition. The reactive gas is supplied from the vacuum reaction chamber 11 through one or more gas supply pipes. The preferred embodiment has two gas supply pipes 24, 25 on the drawing. In order to supply two or more kinds of reaction gases, a plurality of gas storage tanks 23 are connected to the supply pipes 24 and 25. The gas supply pipe 2-7 25 must be provided in the center of the vacuum reaction chamber 11 to form a ring-shaped portion 24A, 25A so that the reaction gas can be supplied in a large area and uniformly. In addition, around the annular portions 24A and 25A: that is, a plurality of nozzles 24B and 25B are provided at regular intervals. When the vapor is deposited, RF power is applied to the helical antenna, and a gas is supplied from a preselected reaction gas storage tank 23 to the supply pipes 24,25. This paper is also suitable for China National Standards (CNS > A4 size (210X297 mm)) (please read the minus note on the back before filling this page).
A7 B7 421676 五、發明説明（ m. n —^ϋ 1. ___ --1^------ ,Γ.' {請先閑锖背面之注意事項再填寫本頁} 體供應管的氣體，係通過形成在環形狀部24A，25A的多數 ^^24Β，25Β供應至反應室内，使供應的氣體能均勻且高 密度地形成10"〜l〇i2cnr3的高離子密度(Peak i〇n denshy) 之電感轉合型電蒙。 本較佳實施例為要使電感耦合型電漿形成非結晶形矽 層，而使用SiH4、ShH6、Si^Ch等矽氣體，為要形成矽 氮化莫而使用 SiHVN2、SiHVNH3、SiH2Ch/NH3/H2等氮 化矽氣體。 以下，係以本較佳實施例的電感耦合型電漿化學蒸氣 沈積裝置所製造的各種薄膜的薄特性説明。 —、 第3圖係表示以本較佳實施例製造的非結晶形矽薄膜 FT-IR特性圖（Fourier transform infrared)。此係在單結晶 梦基體上蒸氣沈積非結晶妙薄膜，以BomEN 1〇〇fr〇ir 光譜儀，測定在赤外線範園的透過性。在赤外線範圍的分 光結果，可顯示出波數2000Cm-i之Si-H鍵(bond)的延展模 (stretch mode)，及在波數6i〇cm-4Si_H鍵的彎曲模（bend mode)。因此，以本較佳實施例製造的非結晶形薄膜，尚 沒發現Si-H2鍵，而由Si-H鍵計算薄膜内的氫含量時，^ 14at. % 〇 經濟部中央標準局員工消費合作社印製 第4圖係表示以本較佳實施例的電感耦合型電漿化學 蒸氣沈積衣置，所製造的非結晶形秒薄膜之電氣傳導特 性。 ' 其中，康寧(Corning)7〇59破璃係使用為蒸氣沈積薄膜 的基板，在此基板上，以上述方法形成非結晶形矽薄膜， 私紙張又度適用中國國家標準（CNS ) A4規格（210X297公釐} 經濟部中央標準局負工消費合作社印製 421676 A7 B7 - . ....... 丨, .. ------- — 五、發明説明（） 在非結晶形矽薄膜上面，以熱蒸氣沈積方法，製成共平面 構造的鋁電極薄膜。然後，基板被放置於附著於電感轉合 型電漿化學蒸氣沈積裝置的放置台20，復使用凱史來靜電 計（Keithley electrometer)617及凱史來萬用計（Keithley multimeter)197，以測定其不同溫度的電氣傳導性。由測 定結果計算之常溫無照電氣傳導性（dark conductivity)為 4·3 X 10-12 Ω “cm-1並以測定結果計算之AM·1條件（光在 100mw/cm2以下照射樣品）的光電氣傳導性為 cm-1，而活性化電能為i.〇5ev。因此，以本較佳實施例蒸 氣沈積的非結晶形歹薄膜的光感度為3 xl〇6，就知道該非 結晶形矽材料有很優良的物性。 弟5圖係表示以本較佳實施例的電感耦合型電漿化學 蒸氣沈積裝置所製造的非結晶矽薄膜的光束間隙。將康寧 (C〇ming)7059破璃基板上蒸氣沈積的薄膜，以紫外線 視光線分光光度計(UV/VIS Spectrophotometer)測定光吸 收係收(d)，又以該測定的光吸收係數，得到如下式的光束 間隙。 (a h v )1/2 = b(e —Egopt) 式中B :光束傾向常數 hu :入射光的光子能 α :光吸收係數 Eg〇pt :光束間隙 如第5圖所示，光束間隙為178eV。從這數據就可知 道，本較佳實施例的非結晶矽薄膜，係典型的非結晶矽薄 膜0 11 本紙張尺度通用T囤國豕標準（CNS ) A4規格（210X297公釐） f請先閲讀背面之注$項再填寫本頁) .訂. 經濟部中央標準局貝工消費合作社印裝 421676 五、發明説明（） —第6圖，係表示在本較佳實施例的電感合型電漿化學 蒸氣沈積沈置，依照HVSiH4的比例，由蒸氣沈積的微小結 晶形珍薄膜的拉曼舰(Raman seattei<ing)，得到的結晶度 (Degree of cryStallization)及全幅半值圖（FuU Wedth 紂 half Maximum，FWHM)。在康寧（Corning)7〇59的破璃基 板上，蒸氣沈積的微結結晶形成梦薄膜，以拉曼光譜學 (Raman Spectroscopy, H. Kakinuma et. al., Jpn J. Appl. Phys.70,7374, 1991)，求出結晶度與全幅半值。 . 又，再以注射電子顯微鏡（SEM)測定微細結晶的大小 時，其結果為微細結晶的大小為2〇〇A〜400A，結晶度則 如第6圖所示，為70%〜73%。此數值如與典型的微細矽 結晶粒的大小30A〜200A，結晶度為2%〜70%之範圍 時，就知道本較實施例的微細結晶粒矽薄膜係一種很優良 的薄膜。 弟7圖係表示以本較佳實施例製造的非結晶形梦薄膜 之FT-IR特性圖（Fourier transform infrared)。此係在電氣 傳導性較大的單結晶秒基板上，蒸氣沈積氮化秒薄膜，以 B0MEN公司所製造之FT_IR光譜儀，測定紫外線範圍的透 過性。其測定結果，可得到波數3340cm-1時N-H鍵的延展 模（Strech mode)及波數llSOcnr1時N-H鍵的彎曲模（bend mode)，以及波數MOcnr1時Si-N键的擺動模（wagging moed)。（請參考CRC所印行J‘ Mort與F. Jansen所著之 Plasma Deposited Thin Films，第35 頁）。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本買}A7 B7 421676 V. Description of the invention (m. N — ^ ϋ 1. ___ --1 ^ ------, Γ. '{Please pay attention to the precautions on the reverse side of this page before filling this page} Gas in the body supply pipe The majority of the ^^ 24B and 25B formed in the ring-shaped portions 24A and 25A are supplied to the reaction chamber, so that the supplied gas can form a high ion density of 10 " ~ 10i2cnr3 uniformly (Peak i〇n denshy) ) Inductive transfer type electric mask. This preferred embodiment is to make the inductive coupling type plasma form an amorphous silicon layer, and use silicon gas such as SiH4, ShH6, Si ^ Ch, etc. The use of silicon nitride gas such as SiHVN2, SiHVNH3, SiH2Ch / NH3 / H2, etc. The following is a description of the thin characteristics of various thin films manufactured by the inductively coupled plasma chemical vapor deposition apparatus of the preferred embodiment. —, FIG. 3 Shows the FT-IR characteristic diagram (Fourier transform infrared) of the amorphous silicon thin film manufactured by this preferred embodiment. This is a vapor-deposited amorphous thin film on a single crystalline dream substrate, using a BomEN 100Frir spectrometer ， Measure the transmittance of the Fanyuan Park. The spectroscopic results in the range It can display the stretch mode of the Si-H bond (bond) with a wave number of 2000 Cm-i and the bend mode at a wave number of 60 cm-4 Si_H bond. Therefore, this preferred implementation The amorphous film produced by the example has not yet found the Si-H2 bond, but when the hydrogen content in the film is calculated from the Si-H bond, ^ 14at.% 〇 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Using the inductively-coupled plasma chemical vapor deposition clothing of the preferred embodiment, the electrical conductivity characteristics of the amorphous second film manufactured. 'Among them, Corning 7059 glass-breaking system is used as a vapor-deposited film. A substrate on which an amorphous silicon film is formed by the above method, and the private paper is again applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 421676 A7 B7- ....... 丨, .. ------- — V. Description of the invention () On the amorphous silicon film, a coplanar structure aluminum electrode film is made by a thermal vapor deposition method. Then, the substrate is placed in an inductive plasma plasma vapor deposition device. The placement table 20 is composed of a Keithley electrometer 617 and a Keithley multimeter 197 in order to measure the electrical conductivity at different temperatures. The normal temperature unilluminated electrical conductivity calculated from the measurement results ( Dark conductivity) is 4 · 3 X 10-12 Ω "cm-1 and the AM · 1 condition calculated from the measurement results (light irradiates the sample below 100mw / cm2) is cm-1, and the activated electric energy is I.〇5ev. Therefore, if the photosensitivity of the amorphous samarium thin film deposited by the vapor deposition of this preferred embodiment is 3 x 106, it is known that the amorphous silicon material has excellent physical properties. Figure 5 shows the beam gap of an amorphous silicon thin film manufactured by an inductively coupled plasma chemical vapor deposition apparatus of the preferred embodiment. The vapor-deposited thin film on the Coming 7059 glass substrate was measured by a UV / VIS Spectrophotometer (d), and the measured light absorption coefficient was used to obtain the following: Beam gap. (a h v) 1/2 = b (e —Egopt) where B: beam constant constant hu: photon energy of incident light α: light absorption coefficient Eg〇pt: beam gap As shown in Fig. 5, the beam gap is 178eV. From this data, it can be known that the amorphous silicon film of the preferred embodiment is a typical amorphous silicon film. 0 11 This paper is a universal T-store national standard (CNS) A4 specification (210X297 mm) f Please read first Note on the back (please fill in this page before filling in this page). Order. Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and printed by the Shellfish Consumer Cooperative 421676 5. Description of the invention ()-Figure 6 shows the inductor-type plasma in the preferred embodiment Chemical vapor deposition, according to the ratio of HVSiH4, the crystallinity (Degree of cryStallization) and the full-value half-value diagram (FuU Wedth 纣 half) obtained from the Raman seattei < ing of the thin crystalline thin film deposited by vapor deposition Maximum, FWHM). On the glass-breaking substrate of Corning 7059, vapor-deposited micro-junction crystals formed a dream film, and Raman Spectroscopy, H. Kakinuma et. Al., Jpn J. Appl. Phys. 70, 7374, 1991), to find the crystallinity and half-value of full width. When the size of the fine crystals was measured with an injection electron microscope (SEM), the size of the fine crystals was 200 A to 400 A, and the crystallinity was 70% to 73% as shown in Fig. 6. When this value is similar to that of a typical fine silicon crystal particle having a size of 30A to 200A and a crystallinity in the range of 2% to 70%, it is known that the fine crystal silicon film of this comparative example is an excellent film. Figure 7 is a FT-IR characteristic diagram (Fourier transform infrared) of the amorphous dream film manufactured in this preferred embodiment. This is a vapor-deposited nitrided second film on a single-crystal second substrate with large electrical conductivity. The FT_IR spectrometer manufactured by B0MEN was used to measure the transmission in the ultraviolet range. As a result of the measurement, the extension mode (strech mode) of the NH bond at a wave number of 3340 cm-1, the bend mode of the NH bond at a wave number of llSOcnr1, and the swing mode of the Si-N bond at a wave number of MOcnr1 (wagging moed). (See Plasma Deposited Thin Films by J ’Mort and F. Jansen, CRC, p. 35). This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling in this purchase}
五、發明説明（ 經濟部中央榡準局男工消費合作社印製 A7 B7 由此，就可知以本較佳實施例形成的氮化矽薄膜，係 一種典型的氮化梦薄膜。（請參考p. pa(juschek等所著之 Thin solid Films, 110, 291, 1983)。 第8圖係表示以本較佳實施例的電感耦合型電漿化學 蒸氣沈積裝置所製造的氮化矽薄膜電流—電壓特性。 此係將電阻為10〜15 Ωαη的P型單結晶梦基板上，蒸 氣沈積厚度約為1000Α的氮化矽薄膜後，以熱蒸氣沈積方 法，由真空中形成直徑1腿的铭層，通過上述程序，製成具 有MIS構造之用來測試電流一電壓特性之試片。並以凱史 來(Kehhley)靜電計6!7測定該構造體的電流電壓特性。測 定結果如第8圖所示，可知其破壞電壓為7]^乂，而電流密 度在lMV/cm時約為 ι〇·Η»Α/αιτ2。 《發明的效果》 如上述，依本發明的電感耦合型電漿化學蒸氣沈積裝 在介電屏絲面，賴不含氧_層，而連結在氣 骷供應万法的環狀部，需設於室的中央位置，且 _ 周圍，以一定間隔形成多數的氣體注入口，目彳 _ :到高密度的均句《。因此，依本發明除; 俨里活性化能力、光束間隙等薄膜特性均很 t而且很均⑽非結晶形雜，以及破壞電壓 穷 度寺縛膜特性優良均⑽氮化矽膜外， = ，勾的雄。更可得到含有場效應:至上= 3的電氣特性優良均糾非結㈣膜 製 造更高品質的TFT-LCD。 W以製 13 本紙張尺度逋用中賴家縣（CNS ) A4規格（21G X 297公釐 (請先閲讀背面之注意事項再填寫本頁}V. Description of the Invention (A7 B7 printed by the Male Workers Consumer Cooperative of the Central Bureau of Standards, the Ministry of Economic Affairs) From this, it can be known that the silicon nitride film formed in this preferred embodiment is a typical dream nitride film. (Please refer to p pa (Juschek et al. Thin solid Films, 110, 291, 1983). Figure 8 shows the current-voltage of a silicon nitride film manufactured by an inductively-coupled plasma chemical vapor deposition apparatus of the preferred embodiment. Characteristics: This is a P-type single crystal dream substrate with a resistance of 10 ~ 15 Ωαη, and a silicon nitride film with a thickness of about 1000 A is vapor-deposited, and then a thermally vapor-deposited method is used to form a one-leg diameter layer in a vacuum. Through the above procedure, a test piece with a MIS structure for testing the current-voltage characteristics was produced. The Kehhley electrometer 6! 7 was used to measure the current-voltage characteristics of the structure. The measurement results are shown in Figure 8 It can be seen that the destruction voltage is 7] ^ 乂, and the current density is about ι〇 · Η »Α / αιτ2 at 1 MV / cm. [Effects of the Invention] As described above, the inductively coupled plasma chemical vapor deposition according to the present invention Installed on the surface of the dielectric screen _ Layer, and the ring part connected to the gas supply method must be located in the center of the room, and around the _, a large number of gas injection ports are formed at a certain interval. Objective: To high-density uniform sentences. Therefore, in accordance with the present invention, in addition to thin film activation properties, beam gaps, and other thin film characteristics are very t and are very amorphous, and the breakdown voltage is poor, the film characteristics are excellent, silicon nitride film, =, It can also be obtained with field effects: supreme electrical properties = 3 and excellent non-junction film to produce higher quality TFT-LCD. W is used to produce 13 paper sizes and is used in Zhonglaijia County (CNS) A4 Specifications (21G X 297mm (Please read the precautions on the back before filling in this page)
A7 經濟部中央標準局員工消費合作杜印製 4P |67g B7 五、發明説明（） 需陳明者，對於熟悉本發明的電感耦合型化學蒸氣沈 積的人士而言，本發明可作許多改變而不脱離本發明所涵 蓋之精神或範圍，因此，本發明之申請專利範圍應包含等 效功能的改變與修正。 (請先閲讀背面之注意事項再填寫本頁)A7 Consumption cooperation by employees of the Central Standards Bureau of the Ministry of Economic Affairs 4P | 67g B7 V. Description of the invention () For those who are familiar with the inductively coupled chemical vapor deposition of the present invention, the present invention can make many changes and Without departing from the spirit or scope covered by the present invention, the scope of patent application of the present invention should include changes and amendments to equivalent functions. (Please read the notes on the back before filling this page)
本紙張尺度適用中國國家標準（CNS ) A4規格（2】Ο X 297公釐）This paper size applies to Chinese National Standard (CNS) A4 specifications (2) 〇 X 297 mm