TW401723B - Semiconductor plastic package and process for the production thereof - Google Patents

Semiconductor plastic package and process for the production thereof Download PDF

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Publication number
TW401723B
TW401723B TW87120501A TW87120501A TW401723B TW 401723 B TW401723 B TW 401723B TW 87120501 A TW87120501 A TW 87120501A TW 87120501 A TW87120501 A TW 87120501A TW 401723 B TW401723 B TW 401723B
Authority
TW
Taiwan
Prior art keywords
circuit board
hole
gold
printed circuit
failure
Prior art date
Application number
TW87120501A
Other languages
Chinese (zh)
Inventor
Morio Take
Nobuyuki Ikeguchi
Kozo Yamane
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9340129A external-priority patent/JPH11176973A/en
Priority claimed from JP10000975A external-priority patent/JPH11195745A/en
Priority claimed from JP00398498A external-priority patent/JP3852510B2/en
Priority claimed from JP10004835A external-priority patent/JPH11204685A/en
Priority claimed from JP10004836A external-priority patent/JPH11204686A/en
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Application granted granted Critical
Publication of TW401723B publication Critical patent/TW401723B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A semiconductor plastic package excellent in heat diffusibility and free of moisture absorption, structured by fixing a semiconductor chip on one surface of a printed circuit board, connecting a semiconductor circuit conductor to a signal propagation circuit conductor formed on a printed circuit board surface in the vicinity thereof by wire bonding, at least connecting the signal propagation circuit conductor on the printed circuit board surface to a signal propagation circuit conductor formed on the other surface of the printed circuit board or a connecting conductor pad of a solder ball with a through-hole conductor, and encapsulating the semiconductor chip with a resin, the printed circuit board having a metal sheet of nearly the same size as the printed circuit board nearly in the center in the thickness direction of the printed circuit board, the metal sheet being insulated from front and reverse circuit conductors with a heat-resistant resin composition, the metal plate being provided with a clearance hole having a diameter greater than the diameter of each of at least two through holes, the through holes being provided in the clearance hole, the through-hole or through-holes being insulated from the metal sheet with a resin composition, at least one through-hole being connected to the metal sheet, one surface of the metal sheet being provided with at least one protrusion portion which is of the same size as the semiconductor chip and exposed on a surface, the semiconductor chip being fixed on the protrusion portion.

Description

經濟部中央標準局員工消費合作社印製 401723 A7 B7 五、發明説明（1) 發明領域 本發明係關於圼半導體晶片安裝於小印刷電路板上之新 穎半導體塑膠封裝體，及生產用於封裝體之雙邊鍍銅層合 物之方法。半導體塑膠封裝體特別可用作高瓦特數多終端 高密度半専體塑膠封裝體，如微處理器，微控制器，ASIC 或圓形介面。半導體塑膠封裝體係Μ焊珠安装於母板印刷 電路板上用作電子部件或器件。 發明之先前技術 習知半導體塑膠封裝體如塑膠球柵陣列（P-BGA)及塑膠 陸塊柵陣列（P-LGA)其構造係經由固定一半導體晶片於塑 膠印刷電路板上表面上，藉接線連结半導體晶片至成形於 印刷電路板上表面之導體電路，形成一導體墊用於Μ焊珠 連结至印刷電路板下表面之母板印刷電路板，經由鍍金屬 之通孔連结正及反電路専體，及Μ樹脂包囊半導體晶片。 前述已知構造中，來自上表面之金屬箔用於固定半導體晶 片至下表面的連结用鍍金屬可散熱通孔經形成用於擴散半 等體晶片產生之熱至母板印刷電路板。 可能有風險為水分可經由前述通孔被吸收入用於固定半 導體的含銀粉樹脂黏合劑内部*且可能成交界面脹大*原 因為安裝於母板時加熱，或當半導體部件由母板移開時加 熱而脹大，稱作「燿米花現象」。當發生爆米花現象時， 於大多数例中封裝體無法再用，故迫切需要克服前述現象。 又，達成更高功能半導體及增高其密度暗示產熱1的增 加，恰位於半導體晶片下方僅形成一個通孔用於敗熱不再 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 4 ---- I n I n n II I I T I I I n I I < (請先閲讀背面之注意事項再本頁) 401723 A7 __B7_ 五、發明説明（2) 足夠。 發明概述 本發明之目的係提供一種具有絕佳散熱率之半導體塑膠 封裝體，用於克服經由達成更高功能半導體及增高其密度 造成的熱虽增高問題，及其製法。 本發明之另一目的係提供一種半導體塑膠封装體，其於 半導體晶片下表面不會吸收，故於吸水後之加熱附久性顯 著改良換言之爆米花現象顯著改良，及散熱率顯著改良， 及其製法。 本發明之又另一目的係提供一種半導體塑膠封裝體其可 用於量產且經濟效能改良，及其具有新穎構造，及其製法。 本發明之又另一目的係提供一種半導體塑膠封裝體，其 於壓力鍋内處理後之耐熱性、電絕緣性絕佳及其遷移電阻 絕佳，原因為其使用熱固樹脂組合物含有多官能氟酸酯或 多官能氣酸酯預聚物作為主要成分，及其製法。 經濟部中央標準局貝工消費合作社印製 根據本發明提供一種半導體塑膠封裝體，其構造方式係 經由將一半導體晶片固定於一印刷電路板一面上，藉接線 連结一半導體電路導體至形成於其附近之印刷電路板表面 之信號傳播電路導體，至少Μ—通孔導體連結於印刷電路 板表面上之信號傳播電路導體至成形於印刷電路板另一面 上之信號傳播電路導體或焊珠之連結導體墊，及Κ樹脂包 囊半専體晶Η ， 該印刷電路板具有一金屬片其大小幾乎等於印刷電路板 大小接近位於印刷電路板厚度方向中央，金靥片儀Μ耐熱 5 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家揉準（CNS ) Α4規格（210X297公釐） 401723 A7 B7 五、發明説明（3) 樹脂組合物 隙孔其直徑 餘隙孔内， 孔係連结至 等於半導體 於凸部上。 根據本發 係經由將一 媒連结一半 面之信號傳 板表面上之 上之信號傳 囊半導體晶 該印刷電 大小接近位 樹脂組合物 隙孔其直徑 餘隙孔内， 孔係連結至 等於半導體 於凸部上， 根據本發 邊鍍金屬箔 接近與印刷 與正面及反面電路導體 係大於至少二通孔個別 通孔係Μ樹脂組合物與 金屬片，金靨片一面設 晶片大小且暴露於一面 明也提供一種半専體塑 半導體晶片固定於一印 導體電路導體至形成於 播電路導體，至少Κ通 信號傳播電路導體至成 播電路導體或焊珠之連Η ， 絕緣，金屬板設置一餘 之直徑，通孔係設置於 金饜Η絕緣，至少一通 置至少一凸部，其大小 上，半導體晶片係固定 膠封裝體，其構造方式 刷電路板一面上，藉接 其附近之印刷電路板表 孔導體連结於印刷電路 形於印刷電路板另一面 結導體墊，及Κ樹脂包 小幾乎等於印刷電路板 中央，金 絕緣，金 之直徑 ---- ----β------iT------5 —— (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消费合作社印製 路板具 於印刷 與正面 係大於 通孔係 金羼片 晶Η大 金屬片 明又提 層合物 板電路 有一金屬片其大 厚度方向 電路導體 通孔個別 電路板 及反面 至少二 Μ樹脂 *金屬 羼片係Μ耐熱 靨板設置一餘 通孔係設置於 組合物與金鼷Η絕緣*至少一通 片一面設置至少一 小且暴露於一面 凸部，其大小 體晶片係固定 上，半導 面設置一凸面暴露 生產用於半導體塑 ，該封裝體之構造方式係將一片 板相同大小的金羼片設置於印刷電路板 之另一 供一種 之方法 用於散熱。 膠封裝體之雙 本紙張尺度適用中國國家梂準（CNS ) A4規格（210Χ297公釐） 6 _ β - 401723 A7 A7 B7 五、發明説明（4) 一 於 少片 至晶 之體 小導 大半 等定 相固 片’ 晶上 體面 導一 半板 與路 乎電 幾刷 供印 提於 ’ 部 央凸 中片 向靨 方金 度露 厚暴 路於路 電结電 刷連刷 印體印 之専於 近孔成 附通形 其一至 於Μ體 形少導 成至路 至 ，電 片體播 晶導傳 體路號 導電信 半播之 結傳上 連號面 線信表 接之板 藉上路 , 面 電 上表刷 其板印 樹 及 % 墊 體 導 結 it 逋 珠 焊· 或 體 導 路 電 S3 播 ， 傳片 號晶 信 摄 之導 上半 面囊 一 包 另脂 該 及 或 徑 直 孔 通 於 大 徑 之Ξ 片直 有 罾金員 列Ϊ孔 下Ξ隙 餘二一法,,成 方)Jf形 片 晶 體 導 半 裝 安 於 用 上 面 小 其 鏠 開 孔 通 之 體 導 路 電 反 及 正 導 傳 供 提 於 用 徑 直 孔 通 於 大 係 邊 或 片 物 浸 預 性 39 流 非 或 性 39 流 低 之 孔1 有 含 一 置 設 置邊 ， 位一孔 起 另隙及 凸於餘 ， 於層補上 大脂填邊 略樹夠兩 係或足其 孔片流於 該物脂物 , 浸樹合 上 預及層 邊性量箔 該動含靥 之流脂金 部高樹鍍 凸一有邊 屬 置具單 金設層或 成，該萡 形積或屬 於面片金 層部該置 脂凸，設 樹 之上及 合 整 其 將 而 因 合 集 得 所 形 成 « 層 下 壓 加 及 熱 加 於 (請先閱讀背面之注意事項再填^ί本頁) 訂 線- 經濟部中央標準局員工消費合作社印製 物 合 層 箔 靥 金 鍍 邊 雙 式 入 嵌 片 靥 金1 成 形 且 體 1 為 明 說 單 簡 之 式 圈 驟 步 之 體 装 封 膠 塑 之 明 發 本 產 生 示 顯 意 示 11 圖 靥 金 於 成 形 示 顧 9 圖 面 剖 大 放 之 片 晶 體 導 半 裝 安 為 例 之 小 更 積 面 片 晶 體 導 半 之 明 發 本 比 積 面 咅 凸 之 上 面 圖 一 Η 片 屬 金1 示 画 0 意 示 板 路 電 刷 印 之 片 屬 金 圖該 有 具 1 及 孔 隙 餘 形 0 開 成 形 中 其 本紙張尺度適用中國國家橾準（CNS ) Α4規格（210X297公釐） 7 五、發明説明（5) A7 B7 於 步 一 進 示 顯 意 示 0 步 之 體 裝 封 膠 塑 體 導 半 IfUil 0 生 Μ 圖 至 孔 通 盲 成 形 物 合 層 箔 属 金 鍍 圖邊 雙 驟 步 示 所 導 半 裝 安 。 於 。 部用 部凸中 凸二其 之之， 片片體 靥屬裝 金金封 於於膠 成成塑 形形體 紋紋導 壓壓半 藉藉 一 示示示 畐 頁 頁 羅簾鑼 意意意 示示 示 5 6 7 圖圖圖 肜 係 部 凸 用 熱 散 及 上 面.1 片 靥 金 於 成 形 係 。 部上 凸面 之 一 片另 晶於 體成 晶 體 導 半 裝 安1 中 其 Hwn 裝 封 膠 塑 體 導 半 示 顯 意 示 靥 。 金部 於緣 成周 形之 係板 部路 凸電 及刷 , 印 上於 面應 一 對 之置 片位 靥其 金而 於上 成面 形反 係及 部面 凸正 圖之之 片 片 晶 體 導 半 裝 安1 中 其 體 裝 封 膠 塑 體 導 半 示 顯 意 示 9 圖 屬 金 於 成。 形部 係緣 部周 凸之 及板 ， 路 上電 面刷 一 印 之於 片應 靥對 金置 於位 成其 形而 係上 部面 凸，反 之 之 片 片 晶形 體成 導係 半孔 装通 安用 中熱 散 ’ 而 體’ 装上 封面 膠 一 塑之 體片 導屬 半金 一 於 示成 顯形 意係 示 部 10凸 圖 至 片 (請先閲讀背面之注意事項再填寫本頁) 装. 訂 經濟部中央標準局貝工消費合作社印製 驟驟 步步 之之 1揸 Μοβ HQA 裝裝 封 封 膠 膝 塑塑 體體 導導 半半 產產 生生 1 2 例例 。 較較 Η 比比 靥於於 金示.示 達顯顯 到意意 面示 示 反1112 由圖圖 為 明I 說一 细 詳 之 明 屬 金 之 率 熱 散 佳 絕 有 具 中 體 装 封 膠 塑 體 導 半 之 明 發 本 路孔 電隙 反餘 及之 正片 於屬 用金 。 於 央作 中製 向於 方小 度係 厚 徑 之直 板之 路孔 電通 刷屬 印金 於鍍 置之 設用 係導 片 傳 央 中 旨 fl 樹 之 孔 隙 餘 於 補 填 於 。 形緣 成絕 近片 接屬 孔金 通與 屬孔 金通 鍍保 及確 ’ 可 徑故 直 ， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 8 401783 A7 經濟部中央標準局貝工消費合作社印裝 ____B7_五、發明説明（G) 已知之固定半導體晶片於印刷電路板上表面之方法中’ 該印刷電路板具有一含通孔金靨片作為内層，來自半導體 晶片之熱無可避免地傳入恰位於其下方之散熱通孔，類似 習知P-PG A封裝體般，而無法克服爆米花現象。 使用根據本發明所得雙邊鍍銅層合物製備之半導體塑膠 封裝體用印刷電路板之構造如下。至少一金屬凸部用於使 用導熱黏合劑固定半導體晶片係暴露於板表面上，直徑大 於通孔直徑之餘隙孔係製作於通孔的形成位置，通孔直徑 小於餘隙孔直徑且製作成接近餘隙孔中央*正及反電路以 鍍層連接，及至少一通孔直接連结至作為内層之金靨Η。 因此，經由固定半導體晶片，接線及以樹脂包囊晶片製備 之半導體塑膠封裝體產生之熱由半導體晶片直接安裝至金 靨部分導熱至整體金屬片。因此前述構造中熱係由與緊接 於半導體下方位置不同處所傳熱，熱係透過連接至金屬片 之通孔傳熱至下表面之金羼墊，及擴散入母板印刷電路板。 本發明中，首先至少一具有適當大小可用於固定半導體 晶片之凸部藉已知蝕刻方法、冷機制方法或壓縮軋製變形 法成形於金屬Η上。凸部尺寸接近等於半導體晶片大小° 然後於待形成通孔位置，藉已知蝕刻方法、衝穿方法、鑽 孔方法或雷射方法製作一餘隙孔。餘隙孔允許形成一通孔 用於正反面傳導，其尺寸係大於通孔直徑至某種程度。 半導體產生之熱係由半導體晶Η直接安裝金鼷部分導热 至金靥片整體，因此至少一鍍金靥通孔由緊鄰於半導體晶 片下方位置不同處所透過金靨片形成至下表面之金靥墊’ ^ y - (請先閱讀背面之注意事項再填寫本頁) •雇·Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 401723 A7 B7 V. Description of the Invention (1) Field of the Invention The present invention relates to a novel semiconductor plastic package in which a semiconductor wafer is mounted on a small printed circuit board, and the production of the package used for the package Double-sided copper plating laminate method. Semiconductor plastic packages are particularly useful as high-wattage, multi-terminal, high-density half-body plastic packages such as microprocessors, microcontrollers, ASICs, or circular interfaces. The semiconductor plastic packaging system M solder beads are mounted on a motherboard printed circuit board for use as electronic components or devices. Prior to the invention, conventional semiconductor plastic packages such as plastic ball grid arrays (P-BGA) and plastic land grid arrays (P-LGA) are constructed by fixing a semiconductor chip on the surface of a plastic printed circuit board and using wiring. Connect the semiconductor wafer to the conductor circuit formed on the upper surface of the printed circuit board to form a conductor pad for the mother board printed circuit board where the M bead is connected to the lower surface of the printed circuit board, and the positive and negative electrodes are connected through metal-plated through holes. Anti-circuit carcass, and M resin encapsulated semiconductor wafer. In the aforementioned known structure, the metal foil from the upper surface is used to fix the semiconductor wafer to the lower surface of the metal-plated heat-dissipating through hole for connection, and is formed to diffuse the heat generated by the haloid wafer to the mother board printed circuit board. There may be a risk that moisture can be absorbed into the silver powder-containing resin adhesive used to fix semiconductors through the aforementioned through holes * and the trading interface may swell * due to heating when mounted on the motherboard, or when semiconductor components are removed from the motherboard Sometimes it swells when heated, which is called "Yaomihua phenomenon". When the popcorn phenomenon occurs, the package can no longer be used in most cases, so it is urgent to overcome the aforementioned phenomenon. In addition, achieving higher-function semiconductors and increasing their density implies an increase in heat production1. Just one through hole is formed just below the semiconductor wafer for heat loss. This paper is not applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ) 4 ---- I n I nn II IITIII n II < (Please read the precautions on the back before this page) 401723 A7 __B7_ 5. Description of the invention (2) is sufficient. SUMMARY OF THE INVENTION The object of the present invention is to provide a semiconductor plastic package with excellent heat dissipation rate, which is used to overcome the problem of increased heat caused by achieving higher function semiconductors and increasing its density, and a method for manufacturing the same. Another object of the present invention is to provide a semiconductor plastic package, which does not absorb on the lower surface of the semiconductor wafer, so that the heating durability after water absorption is significantly improved, in other words, the popcorn phenomenon is significantly improved, and the heat dissipation rate is significantly improved, and System of law. Still another object of the present invention is to provide a semiconductor plastic package which can be used for mass production and improved economic performance, has a novel structure, and a manufacturing method thereof. Yet another object of the present invention is to provide a semiconductor plastic package having excellent heat resistance, electrical insulation, and excellent migration resistance after being processed in a pressure cooker. The reason is that the thermosetting resin composition contains polyfunctional fluorine Acid ester or polyfunctional gas acid ester prepolymer as the main component, and its preparation method. Printed by the Shell Standard Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. According to the present invention, a semiconductor plastic package is provided, which is constructed by fixing a semiconductor chip to one side of a printed circuit board, and connecting a semiconductor circuit conductor to a semiconductor circuit by wiring. The signal transmission circuit conductor on the surface of the nearby printed circuit board, at least M-through-hole conductor is connected to the signal transmission circuit conductor on the surface of the printed circuit board to the signal transmission circuit conductor or solder bead formed on the other side of the printed circuit board Conductor pad, and K resin-encapsulated half-body crystal. The printed circuit board has a metal sheet whose size is almost equal to the size of the printed circuit board. It is located near the center of the thickness direction of the printed circuit board. Note on the back, please fill in this page again.) This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 401723 A7 B7 V. Description of the invention (3) Resin composition gap hole in the diameter gap hole, hole It is connected to the semiconductor on the convex portion. According to the present invention, a signal is transmitted through a signal-transmitting semiconductor crystal on the surface of a signal-transmitting board connecting a medium to the half-surface. The printed electrical size is close to the position of the resin composition gap hole in the diameter gap hole, and the hole system is connected to equal to the semiconductor. On the convex part, according to the hairline, the metal foil is close to the printing and the front and back circuit conduction systems are larger than at least two through holes. The individual through holes are M resin compositions and metal sheets. The side of the gold foil is set to the size of the wafer and exposed on the side. Ming also provides a semi-conductor plastic semiconductor wafer fixed on a printed conductor to a conductor formed in a broadcast circuit, at least κ through the signal transmission circuit conductor to the conductor of the broadcast circuit conductor or solder beads, insulated, and a metal plate set more than one Diameter, through-holes are set in the gold insulation, at least one through at least one convex portion, the size of which, the semiconductor wafer is a fixed plastic package, the structure of the method of brushing one side of the circuit board, borrowing a nearby printed circuit board The surface hole conductor is connected to the printed circuit and is formed on the other side of the printed circuit board with a conductive pad, and the small K resin package is almost equal to the center of the printed circuit board. , Gold insulation, gold diameter ---- ---- β ------ iT ------ 5 —— (Please read the notes on the back before filling this page) Central Bureau of Standards, Ministry of Economic Affairs The printed circuit board of Beigong Cooperative Co., Ltd. is printed on the front side and is larger than the through-hole system. The metal plate is a large metal plate and the laminated circuit is a circuit. There is a metal plate with a large thickness. At least two M resins * metal cymbals are M heat-resistant slabs and one through hole is provided. The composition is insulated from the metal slabs. * At least one through slab is provided with at least one small and exposed part on one side. Above, a semiconducting surface is provided with a convex surface exposed for production of semiconductor plastics. The package is constructed by placing a gold chip of the same size on a printed circuit board as another method for heat dissipation. The double paper size of the plastic package is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 6 _ β-401723 A7 A7 B7 V. Description of the invention (4) More than half of the small guide "Phase-phase solid film" crystal decent half guide plate and Luhu brushes for printing and lifting "Central central convex film to the side of the square Jindu Lu thick road to the road electric junction brush with the printed body print The near hole has a through shape, one of which is the M shape, and the other is the less conductive shape. The electric film is used to broadcast the crystal, the body is numbered, and the conductive letter is semi-broadcast. The above table is printed with its printed tree and% pad body guide knot. It is bead welded, or the body guide circuit is broadcasted by S3. The upper half of the bag is transferred by the film number, and the bag is filled with grease. (The film is straight with the gold member row and the gap below the hole, the remaining two methods, and the square), Jf-shaped chip crystal half is installed in the body guide with the upper side of the small hole to open the electrical conduction and positive conduction For use with straight holes through large system edges or sheets Flowing non-orbiting 39 The hole 1 with low flow has a set edge, one hole has another gap and is more than convex, and the layer is filled with large fat to fill the edge, and it can be enough for two lines or the hole piece to flow on the object. Fat, dipped in the tree and closed the layer to predict the edge of the amount of foil, the dynamic flow of the gold resin part of the tall tree plated convex, edged with a single gold layer or formed, the shape of the product or belongs to the gold layer of the sheet This fat convex, set above the tree and assemble it will be formed due to the collection «under the layer pressure and heat on (please read the precautions on the back before filling this page ^) Thread-Central of the Ministry of Economic Affairs Printed by the Bureau of Consumer Standards Co., Ltd. Laminated Foil 靥 Gold Plated Double Insert Sheet 靥 Gold 1 Shaped and Body 1 is a simple, simple, simple, circular body sealant. Shown in Figure 11 is the shape of gold. Figure 9 shows a large piece of crystal with a half of the crystal guide installed as an example. The smaller half of the crystal is more clear than the top of the product. The top is a piece of gold. 1 drawing 0 drawing brush The printed sheet is a gold picture with 1 and pore coform 0. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) during the forming process. 7 V. Description of the invention (5) A7 B7 In step one The display shows the 0 step of the body sealant and plastic body. IfUil 0 Health M map to the hole through the blind formed product composite foil is gold-plated. The double step shows the installation of the guide. On. The two parts are convex and convex, and the body of the piece is filled with gold and sealed in a plastic shape. The pattern pressure is semi-borrowed and borrowed. 5 6 7 Figures Figure 肜 The convex part of the system is dissipated with heat. 1 piece of 靥 gold is applied to the forming system. The convex part of the upper part is crystallized into the crystal to form the crystal guide. The Hwn packaging rubber and plastic guide in the installation guide 1 is shown clearly. The gold plate has a convex shape and a brush on the edge of the system. It is printed on the surface of a pair of tablets, and its gold is formed on the surface. The guide of the body sealant plastic body in the guide half of the installation 1 shows the meaning 9 The picture belongs to Jin Yucheng. The shape part is the convex part of the peripheral part of the edge, and the electric brush on the road should be printed on the sheet. The sheet should be placed against the gold to form its shape and the upper part is convex. Otherwise, the sheet lens is made into a semi-hole for the guide system. Heat dissipating, and body, put on the cover plastic, plastic body guide is half gold, and it is shown in the shape of the display part 10 convex figure to the film (please read the precautions on the back before filling in this page). The Ministry of Central Standards Bureau, Shellfish Consumer Cooperative, printed 1 揸 Μοβ HQA step-by-step procedures to produce 12 cases of half-birth. More than 靥 靥 靥 于 于 in the gold display. Shidaxianxian to the pasta display inverse 1112 from the picture shows the clear I said a detailed understanding of the rate of gold is good heat dissipation must have a plastic body sealant plastic guide The half of Mingfa's hole gap clearance and the positive film are gold. In the central production system, the holes of the straight plate with a thick diameter and small diameter are used to pass through the brushes. The gold-plated design guides are used to pass the central fl tree. The close-up piece is connected with Kong Jintong and Kong Jintong, and it is guaranteed to be straight and straight. This paper size applies to China National Standard (CNS) A4 size (210X297 mm) 8 401783 A7 Shellfish consumption of the Central Standards Bureau of the Ministry of Economic Affairs Cooperative printed ____B7_ V. Description of the invention (G) In the known method of fixing a semiconductor wafer to the surface of a printed circuit board ', the printed circuit board has a gold plate with through holes as an inner layer, and the heat from the semiconductor wafer is impermissible. Avoid passing the heat dissipation through hole just below it, which is similar to the conventional P-PG A package, but it can not overcome the popcorn phenomenon. The structure of a printed circuit board for a semiconductor plastic package prepared using the double-sided copper-plated laminate obtained according to the present invention is as follows. At least one metal protrusion is used for fixing the semiconductor wafer system to the surface of the board by using a thermally conductive adhesive. A clearance hole having a diameter larger than the diameter of the through hole is made at the position where the through hole is formed. Near the center of the clearance hole, the positive and negative circuits are connected by plating, and at least one through hole is directly connected to the gold lining as an inner layer. Therefore, the heat generated by fixing the semiconductor wafer, wiring, and the semiconductor plastic package prepared with the resin-encapsulated wafer is directly mounted from the semiconductor wafer to the metal part to conduct heat to the entire metal sheet. Therefore, in the aforementioned structure, the heat is transferred from a place different from the position immediately below the semiconductor, and the heat is transferred to the gold pad on the lower surface through the through hole connected to the metal sheet, and diffused into the motherboard printed circuit board. In the present invention, at least one convex portion having a suitable size for fixing a semiconductor wafer is first formed on a metal reed by a known etching method, a cold mechanism method, or a compression rolling deformation method. The size of the convex portion is approximately equal to the size of the semiconductor wafer. Then, a clearance hole is made by a known etching method, punching method, drilling method, or laser method at the position where the via hole is to be formed. The clearance hole allows a through hole to be formed for front and back conduction, and its size is larger than the diameter of the through hole to some extent. The heat generated by the semiconductor is directly mounted on the semiconductor wafer by the semiconductor wafer. The gold wafer is partially heat-conducted to the entire gold wafer. Therefore, at least one gold-plated wafer through-hole is formed by the gold wafer on the lower surface through the gold wafer on different places next to the semiconductor wafer. '^ y-(Please read the notes on the back before filling out this page) • Employment ·

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A7 B7 經濟部中央標準局負工消費合作社印製 五、發明説明（ 8) 1 1 含 溶 劑 之 液 體 熱 固 樹 脂 組 合 物 為 佳 9 及 其 事 先 流 入 餘 隙 孔 1 1 内 及 固 化 〇 然 後 樹 脂 藉 網 印 等 施 用 於 表 面 用 於 安 裝 半 導 1 1 體 晶 片 之 暴 露 金 屬 部 分 除 外 及 加 熱 使 樹 脂 變 成 半 固 化 態 /—^ 請 1 先 1 9 然 後 金 屬 萡 置 於 另 — 邊 上 所 得 集 合 於 加 熱 及 加 壓 下 層 閲 讀 1 背 1 叠 成 形 〇 任 一 方 法 中 金 靥 片 之 餘 隙 孔 係 熱 固 樹 脂 組 合 面 之 1 r 物 填 補 〇 金 屬 片 之 側 面 可 於 任 一 種 狀 態 其 可 Μ 熱 固 樹 脂 組 意 事 1 1 合 物 塗 布 或 暴 露 0 再 1 為 了 藉 扣 除 方 法 形 成 通 孔 印 刷 電 路 板 尺 寸 略 大 於 印 刷 本 頁 k- 1 電 路 板 之 金 屬 箔 或 單 邊 鍍 銅 層 合 物 置 於 正 反 面 之 最 外 層 上 1 I 9 所 得 集 合 於 加 熱 及 加 壓 下 層 叠 成 形 藉 此 形 成 一 鍍 金 屬 1 1 萡 多 層 板 其 具 有 正 面 及 反 面 覆 蓋 Μ 金 屬 萡 用 於 形 成 外 層 電 1 1 訂 路 0 1 當層叠成形傅本使用金屬箔作為正面及反面層進行時 電 1 1 路 係 藉 已 知 添 加 方 法 形 成 因 而 形 成 印 刷 電 路 板 〇 1 I 於 藉 前 述 扣 除 法 或 添 加 法 製 備 之 板 上 用 於 正 與 反 電 路 1 線 傳 導 用 通 孔 之 小 直 徑 孔 及 藉 由 連 結 至 金 眉 片 散 熱 之 小 直 徑 1 孔 係 藉 已 知 方 法 使 用 雷 射 電 漿 等 製 作 於 與 半 導 體 固 定 部 1 ί 分 不 同 的 部 分 上 〇 1 1 正 及 反 信 號 電 路 導 引 用 通 孔 用 孔 係 成 形 於 接 近 使 用 樹 脂 1 I 填 補 的 金 靥 片 餘 隙 孔 中 央 因 而 不 會 接 觸 金 靥 片 0 然 後 一 1 1 1 金 靥 層 藉 無 電 鍍 敷 或 電 鍍 形 成 於 通 孔 内 而 形 成 一 鍍 金 膈 通 1 1 孔 〇 全 添 加 法 中 Λ 接 線 端 子 Λ 信 號 電 路 焊 珠 墊 及 導 體 電 1 1 路 係 同 時 形 成 於 正 面 及 反 面 上 0 1 1 半 添 加 方 法 中 9 通 孔 經 鍍 敷 9 同 時 也 鍍 敷 正 面 及 反 面 〇 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _ 1 1 - 401723 Α7 Β7 五、發明説明（9) 經濟部中央標準局貝工消費合作社印製 然後電 使用 ，因定 形成電 屬鍍敷 屬鍍敷 已知熱 視需要 半導 電路板 黏合塾 墊係Μ 焊珠 P-BGA 熱熔化 體，當 於母板 而熔化 雖然 高彈性 較佳使 等之合 本發 用於凸 中面金金有可 刷之合 備 g 装成^有別 η 孔等 板反貴貴具層 印板黏 製iftf 形 Ϊ Μ 0 Ζ -度 路正用 Κ, 塗 述路及 而&*?±墊_ 自。 r 有高 ®於II須後之 前電5|Issh 體isliS ^ Z 具有 刷也接無敷物 於刷接 ^ ^ ^ ^ ^ 佳OUL 又具 。印 ΜΜ,Μ合 {疋印、^以 S 結stiK30C 。佳 ffi W _» ffi τ ^ ffl @ 及 Η 用 連 1 片至P*。"較 表成金表、況，S 0 N Μ,Ι Μ 珠 u 1*30-H0W物 下形之i5f*IIJ樹 著曰SSS « ^ ^ ^ 金度snM20s 及形上線種否固 黏體導 珠 uA(fn，Atl之厚，金至預 面成面接此。.熱 粉導半 焊 ULG時LG明有Fe之30之 表叠表少。蓋性B半少 之J1P-板P-發具與備度脂 上層部至板遮擇 金又至 面 w 備路及 本及銅'製高樹 於由凸後 路罩選 含，及。反 W 製電， 於， ，銅有固 成藉屬然電胆光。或上，囊片^， 刷上 用者銅鍍具熱 形面金。刷敷或上劑面结包晶 U 則印面 ，率氧金佳成 法反之除印鍍物面著表連脂體ftr否板表 制熱含合較形 方正片去成 Μ 合敷黏部法樹導Ifi。母板。限導不由部印 知於晶被完先組鍍 Μ 凸方囊半 W 结於路结殊高，經凸網 已萡體驟此事脂於片屬線包至 W 連装電連特及銅或，藉 藉屬導步藉分樹成晶金接知结 π 於安刷珠無量純，中或 路金半路，部固形體之藉已連 用其印.焊並模用金明部 請 先 閱 讀 背 面 之 注 意 事 項 再|( 本 頁 裝 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） 12 五、發明説明（][〇) A7 B7 於邊 装有 安具 片常 晶通 體’ 導積 半面 使片 夠晶 足體 積導 面半 部於 凸大 。 略 度或 高於 述等 前係 於常 大通 略。 或上 於其 至 5 長 寸 尺 之 熱 知 已 白 選 係 常 通 脂 樹 之 物 合 組 脂 樹 固 熱 之 用 使 明 發 本 »1 ODM 脂 ί Ϊ 樹 樹 氧 環 括 包胺 例亞 特醢 其 二 。 烯 脂丁 樹順 固能 酯 酸 氰 官 多 脂 樹 酯 酸 氰 能 官 多 i tfc 碧 官 多 胺 亞 醢 二 烯 或電 獨之 單後 可水 脂吸 樹、 等阻 此 電 。 移 脂遷 樹、 醚性 基濕 苯耐 伸 、 聚性 之熱 基耐 和於 飽鑑 未。 含 用 及使 脂 合 樹組 物 合 化 酯 酸 。 氰 佳 能 為官 物多 合 之 姐分 脂成 樹脂 酯樹 酸固 氰熱 fct he 链佳 官較 多之 Μ 明 ， 發 等本 性為 特作 力 物1, 合 -化苯 之根 基酸 酸氰 氰4-二1, 少或 至 3 有1, 含括 子包 分例 其特 示其 表 2 2 或 苯 根 ， 酸萘 氰根 三酸 5-氰 3 二 經濟部中央標準局貝工消費合作社印製 1,3,6-三氛酸根萘，4, 4-二氰酸根聯苯，it： (4-二氰酸根 苯基）甲烷，2, 2-貳（4-氰酸根苯基）丙烷* 2,2-贰（3,5-二 溴-4-氰酸根苯基）丙烷，贰（4-氛酸根苯基）醚，1C (4-氟 酸根苯基）硫醚，贰（4 -氰酸根苯基）碾，參（4 -氰酸根苯基 )亞磷酸酯，參（4-氛酸根苯基）磷酸酯及經由甲階酚醛樹 脂與鹵化氰反應所得之氰酸酿類。 除前述化合物外，也可使用日本專利公開案41-1928， 43-1 8468 * 44-479 1 - 45-1 1 72 1，46-4 1 1 1 2 - 47-26853及 5 1 -63 1 49所述多官能鼠酸醱化合物。又也可使用分子量 40 0至6, 000之預聚物及具有三哺環係經由此等多官能氰酸 酯化合物之鎮酸根三聚合形成。預聚物係經由於酸如無機 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -13- -------.----餐------1Τ------線 (請先閱讀背面之注意事項再本頁) 401723 A7 B7 五、發明説明（J 1 ) 酸或路易士酸；鹼如酵酸納或第三胺或鹽如碳酸納作為催 化劑存在下聚合前述多官能氰酸酯單體獲得。預聚物部分 含有未反應單體，係圼單體與預聚物之混合物形式，此種 物料較佳用於本發明。通常前述樹脂係溶解於其可溶的有 機溶劑。 環氧樹脂通常係選自已知環氧樹脂。特例包括液體或固 題雙酚（bisphenoDA型環氧樹脂，雙酚F型環氧樹脂，酚 甲階酚醛樹脂型環氧樹脂，甲酚甲階酚醛樹脂型環氧樹脂 ，環脂族環氧樹脂，經由環氧化丁二烯，成二烯，乙烯基 環己烯或環戊基醚之雙鐽所得之多環氧化合物，及經由多 元醇，f羥基之聚矽氧樹脂及環氧鹵丙烷反應所得之聚縮水 甘油基化合物。此等樹脂可單獨或合併使用。 聚醢亞胺樹脂通常係選自已知之聚藤亞胺樹脂。其實例 包括官能性順丁烯二醸亞胺類與多胺類之反應產物，及Μ 參鐽為端基之聚醢亞胺類，述於JP-B-57-005406。 前述熱固樹脂可單獨使用*但鑑於其各種特性之平衡* 視需要較佳使用其組合。 經濟部中央標準局貝工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 本發明使用之熱固樹脂組合物視需要可含有多種添加劑 ，只要組合物之特有性質未受損即可。添加劑實例包括含 可聚合雙鍵單體如未飽和聚_及其預聚物；低分子量液體 -高分子量彌性體橡膠如聚丁二烯，環氧化丁二烯，順丁 烯二酸化丁二烯，丁二烯-丙烯腈共聚物，聚氛丁二烯， 丁二烯-苯乙烯共聚物，聚異戊間二烯，丁基橡膠，含氟 橡膠及天然橡膠；聚乙烯，聚丙烯，聚丁烯，聚-4-甲基 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） :14- 401723 A7 B7 經濟部中央標準局貝工消費合作社印製 五、發明説明（1 2) 1 1 戊 烯 9 聚 苯 乙 烯 AS樹脂 A B S樹脂 Μ B S樹胞 苯 乙 烯 - 1 1 I 異 物 間 二 烯 橡 膠 聚 乙 烯 -丙烯共聚物 4 -氟乙晞- 6- 氟 乙 1 1 烯 共 聚 物 聚 碳 酸 酯 聚 伸 苯 基 醚 聚 碱 9 聚 酯 及 聚 伸 苯 請 先 1 1 基 硫 化 物 之 分 子 量 預 聚 物 或 寡 聚 物 ； 及 聚 胺 基 甲 酸 乙 酯 0 閲 讀 背 ir 之 注 意 事 項 1 I 此 等 添 加 劑 可 視 需 要 使 用 〇 又 多 種 已 知 添 加 劑 如 無 機 或 有 1 1 L •Mttfe m 填 充 劑 染 料 顔 料 增 稠 劑 潤 滑 劑 除 沫 劑 分 散 1 1 1 劑 均 平 劑 感 光 劑 阻 燃 劑 增 亮 劑 聚 合 抑 制 劑 及 姐 再 填/ 1 變 劑 皆 可 視 需 要 單 xe 卿 或 組 合 使 用 0 固 化 劑 或 催 化 劑 可 視 需 寫（ 本 頁 装 1 要 添 加 至 含 反 應 基 之 化 合 物 0 1 1 本 發 明 之 熱 固 樹 脂 組 合 物 當 加 熱 時 進 行 本 身 之 固 化 0 但 1 1 因 其 固 化 速 率 低 其 經 濟 效 益 不 佳 等 9 故 添 加 已 知 熱 固 催 1 訂 化 劑 於 熱 固 樹 脂 〇 每 百 份 重 量 比 熱 固 樹 脂 之 催 化 劑 量 為 1 | 0 . 005至10份重量比 較佳0 .01至5份重 量 比 0 1 1 已 知 無 機 或 有 機 m 物 或 非 織 物 通 常 用 作 預 浸 物 之 強 化 基 1 1 質 0 強 化 基 質 之 特 例 包 括 已 知玻璃纖維布如E玻璃 S玻璃 1 線 及D玻璃 全芳族聚醢胺纖維布 及液晶缴維布 >此等可 丨 I 為 混 合 物 0 又 可 使 用 經 由 施 用 熱 固 樹 脂 至 薄 膜 如 聚 醚 亞 胺 1 Γ 薄 膜 之 正 反 面 及 藉 加 熱 時 樹 脂 進 入 半 固 化 態 製 備 的 基 質。 1 1 用 作 最 外 層 之 金 屬 箔 通 常 係 選 白 已 知 金 屬 萡 0 較 佳 使 用 1 1 各 e 厚3至100 U m之銅萡 >鋁箔或鎳萡 1 | 餘 隙 孔 或 開 縫 製 作 於 金 羼 片 因 而 其 大 小 略 大 於 正 反 面 傅 1 I 導 用 之 通 孔 直 徑 〇 特 別 通 孔 壁 係 熱 固 樹 脂 組 合 物 絕 緣 9 1 1 | 故 熱 固 樹 脂 組 合 物 產 生 通 孔 壁 與 金 屬 片 餘 隙 孔 或 開 縫 壁 間 1 1 距 至 少 50 U m >雖然並無特殊限制 ，但正反面傳導用之通 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -15- A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（J 3； 1 1 孔 較 佳 具 有 直徑為50至 3 0 0m m < ) 1 1 當 製 備 本 發 明 之 多 層 印 刷 電 路 板 用 預 浸 物 時 基 質 Μ 热 1 1 固 樹 脂 組 合 物 浸 潰 及 熱 固 樹 脂 組 合 物 經 乾 燥 獲 得 半 固 化 y—v 請 先 1 1 態 層 叠 材 料 0 又 可 使 用 Μ 半 固 化 態 製 備 之 不 含 基 質 之 樹 脂 閲 讀 背 1 f | 片 〇 否 則 可 使 用 塗 層 組 合 物 0 此 種 情 況 下 塗 層 組 合 物 依 之 注 1 Γ 據 半 固 化 態 程 度 而 定 轉 成 高 流 動 性 或 非 流 動 性 材 料 0 當 其 意 事 1 項 1 轉 成 非 流 動 性 材 料 時 於 加 熱 及 加 壓 層 叠 成 形 後 樹 脂 流 再 填/ 寫{ 本 頁 1 装 為 100 i l m 或 Μ 下 及 較 佳 50 U m或Μ下 >此例中其主要係黏 1 合 至 銅 片 或 銅 萡 而 未 產 生 任 何 空 隙 〇 層 叠 成 形 之 加 熱 溫 度 1 1 通常為100至180 t： 時間為5至6 0分鐘 溫度及時間可依 1 | 據 預 定 流 動 程 度 適 當 選 擇 〇 1 訂 本 發 明 中 可 使 用 —* 種 構 造 其 中 待 組 成 前 述 印 刷 電 路 板 1 之 内 層 金 羼 片 設 置 有 凸 部 其 直 徑 或 長 度 係 占 半 導 體 晶 片 1 1 單邊之40至90¾ (圖 2 J ) 鍍金屬通孔及電路専體係於印 1 1 刷 電 路 板 之 該 等 部 分 內 /上形成 該等部分係與恰位於半 1 線 導 體 下 方 之 金 屬 凸 部 不 同 通 孔 之 電 路 導 體 及 導 熱 黏 著 劑 1 1 (圖2 k )係Μ可熱 固 化 抗 蝕 劑 或 光 選 擇 性 可 熱 固 化 抗 蝕 劑 1 ί 1 絕 緣 0 此 種 情 況 下 半 導 體 晶 片 係 Μ 含 金 靨 粉 之 導 熱 黏 著 1 1 劑 固 定 於 金 靥 凸 部 表 面 〇 形 成 — 種 構 造 9 其 中 鍍 金 屬 通 孔 1 1 導 體 係 形 成 於 與 半 導 體 晶 Η 下 方 之 金 靥 部 分 不 同 部 分 及 1 | 導 體 係 塗 布 Μ 可 熱 固 化 抗 蝕 劑 或 光 選 擇 性 可 熱 固 化 抗 蝕 劑 1 I 0 導 熱 黏 著 劑 施 用 於 抗 蝕 劑 上 及 黏 著 一 半 導 體 晶 Η 〇 此 1 1 I 種 情 況 下 9 與 可 散 熱 通 孔 恰 位 於 習 知 安 裝 半 導 體 晶 片 之 鍍 1 1 金 部 分 下 方 不 同 9 黏 合 半 導 體 晶 片 與 電 路 或 通 孔 導 體 之 導 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16- 401723 A7 B7 經濟部中央標準局員工消費合作社印箪 五、發明説明（ί 4) 1 1 熱 黏 著 劑 係 Μ 樹 脂 組 合 物 絕 緣 及 半 専 體 晶 片 產 生 之 熱 傳 1 1 熱 至 金 屬 凸 部 及 透 過 直 接 連 接 至 金 牖 Η 之 通 孔 (圖2 i)散 1 1 熱 至 母 板 〇 圖 2 〇 顯 示 鍍 敷 抗 蝕 劑 〇 請 1 先 1 本 發 明 中 9 作 為 餘 隙 孔 > 尺 寸 大 於 通 孔 専 體 之 至 少 一 開 閱 ί 背 1 縫 可 製 作 於 待 組 成 前 述 印 刷 電 路 板 之 内 層 金 羼 片 〇 開 鏠 狀 之 1 注 餘 隙 孔 製 作 於 金 屬 片 故 其 大 小 略 大 於 正 反 面 傳 導 用 通 孔 意 事 1 I 1 直 徑 0 特 別 通 孔 壁 及 金 靥 片 開 縫 壁 較 佳 Μ 熱 固 樹 腊 組 合 物 再 填/ 1 絕 緣 故 熱 固 樹 脂 組 合 物 形 成 通 孔 壁 與 金 鼷 片 開 鏠 壁 間 之 寫ί 本 頁 裝 | 距 雛 至 少 為 50 U m " >雖然並無特殊限制 正面及反面傳導 1 I 用之通孔較佳具有直徑為50至300m m、 >又形成於開縫之至 1 1 I 少 一 通 孔 其 结 構 上 直 接 接 觸 金 靨 故 產 生 之 熱 透 過 此 可 散 1 1 熱 通 孔 擴 散 至 母 板 〇 »*-刖 述 構 造 中 也 不 會 發 生 由 半 導 體 晶 訂 1 片 下 表 面 吸 水 故 可 大 為 改 良 吸 水 後 之 耐 熱 性 換 言 之 可 1 1 克 眼 爆 米 花 現 象 至 極 大 程 度 及 散 熱 率 大 為 改 良 0 1 I 如圖4所示^ 本發明可使用- -種構造 其中- -信號傳播 1 1 後 電 路 導 體 形 成 於 印 刷 電 路 板 正 面 及 形 成 於 印 刷 電 路 板 反 1 面 之 信 號 傳 播 電 路 導 體 或 形 成 供 Η 焊 珠 連 结 至 封 裝 體 外 側 ί 之 電 路 導 體 墊 係 經 由 通 孔 導 體 透 過 至 少 一 盲 通 孔 彼 此 連 结 1 | (圖4 9 q) 0 前 述 構 造 中 9 不 會 發 生 由 半 導 體 晶 片 下 表 面 吸 1 I 收 水 氣 故 吸 水 後 之 耐 熱 性 大 為 改 良 換 言 之 爆 米 花 現 象 1 1 可 克 腋 至 相 當 大 程 度 9 及 散 熱 率 大 為 改 良 〇 1 1 本 發 明 之 金 靥 片 嵌 入 之 半 導 體 塑 膠 封 裝 體 之 製 法 容 後 詳 述。 1 1 本 發 明 係 針 對 一 種 生 產 半 導 體 塑 膠 封 裝 體 用 之 雙 邊 鍍 金 1 | 屬 萡 層 合 物 之 方 法 r 該 半 導 體 塑 膠 封 裝 體 之 構 造 方 式 係 經 1 1 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐）、 1T This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 × 297 mm) 4017 ^ 3 A7 B7 Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (7) 1 1 Thermal diffusion into the mother board printed circuit board 0 1 1 Gold bumps on which convex portions and through holes for fixing semiconductor wafers are formed As required 1 1 Fine surface irregularities can be formed by surface treatment according to known oxidation methods and / > — S Please first 1 1 Form a coating to improve the adhesion and electrical insulation. 0 On the surface of the surface of the gold plate with the convex portion and the back of the reading 1 i The hole 9 The insulating part of the thermosetting resin composition Note 1 \ It is formed on the entire surface instead of the surface of the semiconductor wafer to be fixed. 0 Thermal considerations 1 item 1 The insulation part of the solid resin composition is formed by refilling in a semi-cured state / 1 Write (preparing 1 prepreg containing thermosetting resin composition—. The size of the hole is slightly larger than the convex part of the embossing corresponding to the prepreg on the pre-page. The prepreg is placed on the directly fixed semiconducting 1 1 body wafer. Other prepregs are stacked on the surface of the convex part on the other side of the gold patch. Therefore, the entire surface is covered and laminated under heating and pressure. The order is a set of prepregs. The thickness of the prepreg is configured to be slightly larger than the height of the metal convex part. During the heating and pressurizing steps, the 9 圼 semi-solid thermosetting resin once heated and melted 1 1 flows into the gap holes of the gold cymbal sheet to fill the gap holes and the surface of the non-golden convex portion 1 1 at the same time. The thermosetting resin composition is integrated. The wire and the insulating part can be applied by screen printing or the like by providing a non-soluble or sol-type thermosetting resin composition. Heat the thermosetting resin composition on the entire surface of the metal sheet except for the gold ridges 1 ί part Η to heat it into a semi-solid 1 1 state 9 and place the gold 靥 foil on the outside 9 and add the 埶* \ ν > Laminated under pressure and 1 1 to form the aggregate, thus integrating gold 靥 萡 and gold 靥 Η 0 During lamination, 1 I, the resin flows into the clearance hole 9 and at the same time the resin is thermally cured. When the resin is 1 I beforehand When filling the clearance holes »Resin is applied by screen printing, etc. 9 flows into the remaining 1 under low pressure 1 1 I voids 9 and the solvent or air is removed by heating, so the resin is thermosetting 〇1 1 When solvent is included» Resin tendency Not enough to fill the clearance hole 0. Therefore, the paper size is not applicable to the Chinese National Standard (CNS) A4 (210X297 mm) _ 1 〇- A7 B7 Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Description of the invention (8) 1 1 Solvent-containing liquid thermoset The grease composition is preferably 9 and it flows into the clearance hole 1 1 in advance and is cured. Then the resin is applied to the surface by screen printing and the like to exclude the exposed metal parts of the semiconductor 1 1 body wafer and the heating makes the resin into a semi-cured state. / — ^ Please 1 first 1 9 then the metal cymbals are placed on the other side. The set is heated and pressurized to read the lower layer. 1 Back 1 stacked forming. The gap of the gold cymbal sheet in any method is the thermosetting resin combination surface. 1 r Fill the side of the metal sheet. The side of the metal sheet can be in any state. It can be used in the thermosetting resin group. 1 1 The compound is coated or exposed. 0 Re 1 In order to form a through-hole through the deduction method, the printed circuit board size is slightly larger than the printed page. -1 The metal foil or single-sided copper-clad laminate of the circuit board is placed on the outermost layer of the front and back sides. It can be stacked and formed under heat and pressure to form a metallized 1 1 萡 multilayer board which has front and back sides covered with 萡 metal 萡 for forming the outer layer of electricity 1 1 routing 0 1 when the laminated form uses metal foil as When the front and back layers are in progress, the 1 1 circuit is formed by a known addition method to form a printed circuit board. 0 1 I is used on the board prepared by the aforementioned deduction method or addition method for the positive and negative circuit 1 through-holes for line conduction. The small-diameter hole and the small-diameter 1 hole that is dissipated by connecting to the gold eyebrow are made by a known method using a laser plasma or the like on a different part from the semiconductor fixed portion. 1 1 Positive and negative signal circuit references The through-hole hole system is formed near the center of the gap of the gold chip that is filled with resin 1 I so that it will not contact the gold chip. 0 and then 1 1 1 Electroless plating or electroplating is formed in the through hole to form a gold plated through hole 1 1. In the full addition method Λ terminal Λ signal circuit bead pads and conductors 1 1 circuit system is formed on the front and back 0 1 1 In the semi-additive method, 9 through-holes are plated and 9 are also plated on the front and back sides. 0 1 1 This paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) _ 1 1-401723 Α7 Β7 V. Description of the invention ( 9) Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs and then used for electricity. Due to the formation of electrical plating, plating is known. If necessary, semi-conductive circuit board bonding pads, M beads, P-BGA hot melt, When melted on the mother board, although high elasticity is better, it can be used for convex gold. There is a brushable combination of g. It is packed into ^ different η holes and other plates.形 Ϊ Μ 0--度 路 is using K, Tu Shulu and & *? ± pad_ since. r There is high ® before II after shave 5 | Issh body isliS ^ Z has brush or no dressing for brushing ^ ^ ^ ^ ^ Good OUL and also. Print ΜΜ, Μ 合 {疋 印, ^ S StiK30C. Good ffi W _ »ffi τ ^ ffl @ and Η use 1 piece to P *. " Compared to a gold watch, the situation, S 0 N Μ, 1 Μ beads u 1 * 30-H0W the shape of the i5f * IIJ tree said SSS «^ ^ ^ Jindu snM20s and the shape of the line are not solid guide Bead uA (fn, Atl thickness, gold to the pre-faced surface to connect this .. When the hot powder guide half welding ULG, LG has Fe 30 and the surface stack is less. J1P-board P-hair with half cover With the upper part of Beiduzhi to the board, the gold is also selected. The road and the road are prepared by the convex road cover, and the anti-W system, therefore, copper is solid. Electric gallbladder light. Or, the caplet ^, brush the user with copper plated with hot-shaped gold. Brush or coated with peritectic U then printed on the surface, the rate of oxygen gold is good, otherwise the surface of the printed plate is coated with grease. The body ftr sheet is made by heating. Conformal orthogonal film is used to form the M-bonding adhesive method to guide Ifi. Mother board. The guide is not printed on the part. Yu Jing was plated first. The result is very high, and the matter has been broken through the convex net. The film is wrapped in a metal wire to W, and the electric wire and copper are installed. The borrowed tree is used to borrow the tree into crystal gold. The knot is fine. , Zhong or Lu Jinbanlu, the borrow of the solid body has been used in conjunction with its seal. Please read the precautions on the back of the metal parts for welding and mold first | (The size of this paper is bound to the Chinese National Standard (CNS) A4 specification (2 丨 0X297mm) 12) 5. Description of the invention () [〇] A7 B7 On the side is equipped with a piece of regular crystal through the body's guide half surface so that the film is enough to make the foot volume. The guide half is convex. The degree is slightly higher than the above, and it is tied to the Changda strategy. Or above it to 5 inches. The heat of the Zhizhi has been white selected from the common combination of the fat tree and the combination of the fat tree to fix the heat. The use of Mingfaben »1 ODM Lipid Ϊ Tree tree oxygen includes amines including azetate and the second one. Ester-cyanurate-polyester resin-cyanurate-polyester cyanide-guandol-i-tfc-Biguan polyamine arylene diene or solitary monomer alone can absorb water and lipids to absorb the tree, which can block this electricity. Lipid transfer tree, etheric wet benzene Heat-resistant, stretchable, polymerizable, heat-resistant and non-saturated. Contains the use and the esterification of fatty acids. Cyano-Canon is the best-selling agent of the official compound. It can be divided into fat and resin to form resin esters. There are more Ming officials The nature of the hair is a special force 1, cyanocyanuric acid 4-cyanocyanine 4-di 1, less or as few as 3, 1, including brackets, which are shown in Table 2 2 or benzene, acid Naphthalene cyanotricarboxylic acid 5-cyano 3 Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 1,3,6-triammonium naphthalene, 4, 4-dicyanatobiphenyl, it: (4-dicyanate Phenyl) methane, 2,2-fluorene (4-cyanophenyl) propane * 2,2-fluorene (3,5-dibromo-4-cyanophenyl) propane, fluorene (4-ammoniaphenyl) ) Ether, 1C (4-Fluorophenyl) sulfide, hydrazone (4-Cyanophenyl), ginseng (4-Cyanophenyl) phosphite, ginseng (4-Aminophenyl) phosphate And cyanic acid brewed through the reaction of resole phenolic resin and cyanogen halide. In addition to the foregoing compounds, Japanese Patent Laid-Open Nos. 41-1928, 43-1 8468 * 44-479 1-45-1 1 72 1, 46-4 1 1 1 2-47-26853, and 5 1 -63 1 can also be used. 49. The polyfunctional murine phosphonium compound. It is also possible to use a prepolymer having a molecular weight of 400 to 6,000 and a tricyclic ring system formed by the ballast trimerization of these polyfunctional cyanate compounds. The prepolymer is based on acid such as inorganic. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -13- -------.---- Meal ------ 1T- ----- line (please read the notes on the back before this page) 401723 A7 B7 V. Description of the invention (J 1) Acid or Lewis acid; alkali such as sodium fermentate or tertiary amine or salt such as sodium carbonate It is obtained by polymerizing the aforementioned polyfunctional cyanate monomer in the presence of a catalyst. The prepolymer portion contains unreacted monomer, which is a mixture of fluorene monomer and prepolymer. Such materials are preferably used in the present invention. The resin is usually dissolved in a soluble organic solvent. The epoxy resin is usually selected from known epoxy resins. Specific examples include liquid or solid-state bisphenol (bisphenoDA epoxy resin, bisphenol F epoxy resin, phenol resole phenolic resin epoxy resin, cresol resole phenolic resin epoxy resin, cycloaliphatic epoxy resin Polyepoxides obtained by the epoxidation of butadiene, diene, vinylcyclohexene or cyclopentyl ether, and polyepoxides, and polyhydric alcohols, f-hydroxy silicone resins and epoxyhalopropane reactions The resulting polyglycidyl compounds. These resins can be used alone or in combination. Polyimide resins are generally selected from known polyimide resins. Examples include functional maleimides and polyamines The reaction products, and poly (imines) whose M reference groups are terminal groups are described in JP-B-57-005406. The aforementioned thermosetting resin can be used alone * but in view of the balance of its various characteristics * it can be better used if necessary Printed by Shelley Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the notes on the back before filling this page) The thermosetting resin composition used in the present invention may contain various additives as required, as long as the unique properties of the composition are not affected Damage can be. Examples of additives include polymerizable double bond-containing monomers such as unsaturated poly- and its prepolymers; low-molecular-weight liquid-high-molecular-weight dendrimers such as polybutadiene, epoxidized butadiene, and maleated butadiene Olefin, butadiene-acrylonitrile copolymer, polybutadiene, butadiene-styrene copolymer, polyisoprene, butyl rubber, fluorine-containing rubber and natural rubber; polyethylene, polypropylene, Polybutene, poly-4-methyl This paper is in accordance with China National Standard (CNS) A4 specification (210 × 297 mm): 14- 401723 A7 B7 Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (1 2 ) 1 1 pentene 9 polystyrene AS resin ABS resin M BS dendrimer styrene-1 1 I foreign inter-diene rubber polyethylene-propylene copolymer 4 -fluoroacetam-6-fluoroethylene 1 1 ene copolymer poly Polycarbonate Polyphenylene Ether Polyalkali 9 Polyesters and Polyphenylenes Please first 1 1 molecular weight prepolymer or oligomer of sulfide; and Polyurethane 0 Cautions for reading ir 1 I These additives can be used as needed. There are many known additives such as inorganic or 1 1 L • Mttfe m filler dye pigment thickener lubricant defoamer dispersion 1 1 1 agent leveling agent photosensitizer flame retardant increase Brightener polymerization inhibitor and refilling / 1 change agent can be used as required. Single xe cyanide or combination of 0 curing agent or catalyst can be written as needed. (This page contains 1 To be added to a compound containing a reactive group. 0 1 1 Heat of the present invention The solid resin composition cures itself when heated 0, but 1 1 because of its low curing rate, its economic benefits are not good, etc. 9 So it is known to add a thermosetting resin 1 to the thermosetting resin. Per 100 parts by weight of thermosetting resin The catalyst amount is 1 | 0. 005 to 10 parts by weight is better. 0.01 to 5 parts by weight is 0 1 1 It is known that inorganic or organic materials or non-woven fabrics are usually used as a reinforcing base for prepregs 1 1 quality 0 strengthening Of the matrix Examples include known glass fiber cloths such as E glass S glass 1 line and D glass fully aromatic polyamide fiber cloth and liquid crystal cloth> These can be used as a mixture 0 or can be used by applying a thermosetting resin to the film For example, the front and back sides of the polyetherimine 1 Γ film and the matrix prepared by the resin entering a semi-cured state when heated. 1 1 The metal foil used as the outermost layer is usually selected from white known metals. 0 is preferably used. 1 1 Copper with thickness of 3 to 100 U m each. ≫ Aluminum foil or nickel. 1 | Clearance hole or slit The size of the gold foil is slightly larger than the diameter of the through hole on the front and back sides. The special through hole wall is a thermosetting resin composition insulation 9 1 1 | Therefore, the gap between the through hole wall and the metal sheet is generated by the thermosetting resin composition. The distance between the walls of the holes or slits 1 1 is at least 50 U m > Although there are no special restrictions, the front and back surfaces are used for conduction 1 1 This paper size applies to China National Standard (CNS) A4 (210X297 mm) -15- A7 B7 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (J 3; 1 1 The hole preferably has a diameter of 50 to 300 mm <) 1 1 When the multilayer printed circuit board of the present invention is prepared with Substrate M heat 1 1 impregnation of the solid resin composition during impregnation and drying of the thermosetting resin composition To obtain the semi-cured y-v, please firstly laminate the material in the 1 1 state. 0 can also use the resin without the matrix prepared in the MU semi-cured state. Read the back 1 f | sheet. Otherwise, you can use the coating composition. 0 In this case, the coating composition According to note 1 Γ Depending on the degree of semi-cured state, it will be converted into a highly fluid or non-fluid material. 0 When its meaning 1 item 1 is converted to a non-fluid material, the resin flow is refilled after heating and pressure lamination. / Write {This page 1 is installed at 100 ilm or M and preferably 50 U m or M > In this example, it is mainly bonded to a copper sheet or copper 萡 without any voids. 1 1 Usually 100 to 180 t: Time is 5 to 60 minutes. Temperature and time can be appropriately selected according to the predetermined degree of flow. ○ It can be used in the present invention— * structures in which the aforementioned printed circuit board 1 is to be composed. The inner gold tincture is provided with The diameter or length of the convex portion occupies 40 to 90 ¾ of the single side of the semiconductor wafer. (Figure 2 J) Metal plated through holes and circuits are formed in / on these portions of the printed circuit board. Circuit conductors and thermally conductive adhesives 1 1 (Fig. 2k), which are different from the metal protrusions just below the half-line conductor, are heat-curable resists or light-selective heat-curable resists. 1 1 Insulation 0 In this case, the semiconductor wafer is M. The thermally conductive adhesive containing gold powder 1 is fixed on the surface of the convex portion of the gold powder. 0 is formed—a kind of structure 9 in which the metal plated through hole 1 1 is formed under the semiconductor crystal. Different parts of the gold metal part and 1 | Guide system coated with M heat-curable resist or photoselective heat-curable resist 1 I 0 Thermally conductive adhesive is applied to the resist and a semiconductor crystal is adhered 〇 此 1 1 9 in the right position with the heat sink through hole I Conventional mounting of semiconductor wafer plating 1 1 Different under the gold part 9 Adhesion of semiconductor wafer and circuit or through-hole conductor 1 1 This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -16- 401723 A7 B7 Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs of the People's Republic of China. 5. Description of the Invention (1) 1 1 Thermal adhesive is the heat transfer generated by the M resin composition insulation and semi-corporeal wafer. 1 1 Heat to the metal protrusions and directly connect to The through hole (Fig. 2i) of the gold plate is dissipated 1 1 and heated to the mother board. Fig. 2 〇 shows the plating resist. Please first 1 in the present invention 9 as the clearance hole > At least one opening can be made on the back. One slit can be made in the inner layer of the printed circuit board to be composed of the aforementioned printed circuit board. One of the slits is made in a metal sheet, so its size is slightly larger than The meaning of through-holes for front and back conduction 1 I 1 diameter 0 Special through-hole walls and gold slits with slit walls are preferred. M Thermosetting wax composition refills / 1 Insulation, the thermosetting resin composition forms through-hole walls and gold Written between the walls of the cymbals. This page is installed | At least 50 U m away from the chick " > Although there are no special restrictions on the front and back conduction 1 I The through hole used is preferably 50 to 300 m in diameter, > It is also formed in the opening to 1 1 I. There is one through hole. The structure directly contacts the metal. Therefore, the heat generated by this can be dissipated through the 1 1 thermal through hole and diffused to the mother board. One piece of semiconductor crystal is set to absorb water from the bottom surface, so the heat resistance after water absorption can be greatly improved. In other words, the eye popcorn phenomenon can be improved to a great extent and the heat dissipation rate is greatly improved. 0 1 I As shown in Figure 4 ^ The present invention can be used --Kind of structure where--Signal propagation 1 1 Signal conducting circuit conductors formed on the front side of the printed circuit board and on the reverse side of the printed circuit board, or circuit conductor pads forming Η solder beads to be connected to the outside of the package, are connected to each other through at least one blind through hole through a via conductor. Knot 1 | (Figure 4 9 q) 0 In the aforementioned structure, 9 will not absorb 1 I from the lower surface of the semiconductor wafer. I will collect water, so the heat resistance after water absorption is greatly improved. In other words, the popcorn phenomenon 1 1 can be axillary to a considerable degree 9 and the heat dissipation rate is greatly improved. 0 1 1 The method of manufacturing the semiconductor plastic package embedded with the gold tinsel of the present invention will be described in detail later. 1 1 This invention is directed to a double-sided gold plating for the production of semiconductor plastic packages 1 | A method of plutonium laminate r The structure of this semiconductor plastic package is based on 1 1 This paper is applicable to China National Standards (CNS) A4 Specifications (210X297 mm)

TT A7 B7 經濟部中央橾準局員工消費合作社印製 五、發明説明（15) 1 1 由 設 置 一 大 小 接 近 印 刷 電 路 板 相 同 大 小 之 内 層 金 靥 片 接 近 1 1 於 印 刷 電 路 板 厚 度 方 向 中 央 設 置 至 少 一 暴 露 金 屬 Η 凸 部 1 1 於 印 刷 電 路 板 之 __. 表 面 上 固 定 —. 半 導 體 晶 片 於 其 上 藉 /-s 請 ! 先 1 接 線 連 结 半 導 體 晶 片 至 成 形 於 其 附 近 印 刷 電 路 板 表 面 上 之 閲 1 背 1 一 信 號 傳 播 電 路 導 體 Μ 鍍 金 羼 通 孔 導 體 至 少 連 结 於 印 刷 面 之 1 注 電 路 板 表 面 之 信 號 傳 播 電 路 導 體 至 形 成 於 印 刷 電 路 板 之 另 意 事 1 項 I 一 面 上 之 —· 信 號 傳 播 電 路 導 體 或 m 珠 之 連 結 導 體 墊 及 真 填/ I 樹 脂 包 囊 半 導 體 晶 Η 寫1 本 頁 装 1 該 方 法 包 含 下 列 步 驟 '—· 1 | (1)形成- -凸部於金屬片之- -面上用於安装半導體晶片 1 I 9 及 形 成 — 餘 隙 孔 或 開 鏠 具 有 尺 寸 大 於 通 孔 直 徑 用 於 提 供 1 1 訂 正 及 反 電 路 導 體 傳 導 用 之 通 孔 1 (2)設置- -含有- •'孔之低流動性或非流動性預浸物片或 1 1 樹 脂 層 於 形 成 金 靥 凸 部 之 該 邊 上 該 孔 係 略 大 於 凸 起 位 置 1 | 之 凸 部 面 積 設 置 一 高 流 動 性 預 浸 物 片 或 樹 脂 層 於 另 一 邊 1 Μ 上 > 該 片 或 該 層 具 有 樹 脂 含 量 及 樹 脂 流 足 夠 填 補 餘 隙 孔 9 1 I 及 設 置 金 颺 箔 或 單 邊 鍍 金 羼 箔 層 合 物 於 其 兩 邊 上 及 ί (3)於加熱及加壓下較佳真空層叠成形所得集合使其整 1 1 合 一 體 且 形 成 — 金 屬 芯 插 入 雙 邊 鍍 金 屬 萡 曆 合 物 0 1 I 前 述 雙 邊 鍍 金 屬 萡 層 合 物 用 於 製 備 印 刷 電 路 板 及 半 導 1 I 體 晶 片 Μ 導 熱 黏 著 劑 如 銀 糊 固 定 接 著 接 媒 1 以 樹 脂 包 囊 及 1 1 附 接 焊 珠 0 1 1 前 述 步 m 進 行 如 下 〇 1 1 (4)K鑽頭或雷射於預定位置製造前與後電路傳導用通 1 1 本紙張尺度適用中國國家標準（CNS M4規格（210X297公釐） -18· A7 B7 經濟部中央標準局員工消費合作社印裝 五、發明説明（16) 1 1 孔 9 同 時保持通·孔壁不接觸内層金雇 Η 及 製 成 一 散 熱 通 1 1 孔 而 使 其 接 觸 金 臞 片 〇 通 孔 經 處 理 用 於 去 除 污 潰 接 著 Μ 1 1 金 靥 鍍 敷 〇 電 路 係 藉 已 知 方 法 形 成 於 上 表 面 及 下 表 面 較 請 1 先 1 佳 去 除 金 屬 片 凸 部 之 金 鼷 箔 接 著 Μ 貴 金 鼷 鍍 敷 〇 半 導 體 閲 讀 1 背 1 晶 片 Μ 含 金 靥 粉 導 電 導 熱 黏 合 劑 黏 合 至 内 層 金 靥 片 凸 面 上 面 之 1 注 1 9 接 著 接 線 Μ 樹 脂 包 囊 及 附 接 焊 珠 〇 事 1 | 半 導 體 產 生 之 熱 經 由 半 導 體 直 接 安 装 於 其 上 之 金 靥 部 整 再 1 體 導 熱 至 金 羼 片 故 使 用 一 種 構 造 其 中 至 少 形 成 一 鍍 敷 通 寫f 本 頁 裝 1 孔 因 而 連 结 至 前 述 金 靨 片 及 下 表 面 之 金 靨 墊 f 故 來 自 半 導 '—✓ 1 I 頒 晶 Η 之 熱 散 熱 至 母 板 印 刷 電 路 板 0 1 1 I 本 發 明 中 S 於 金 靥 片 一 表 面 上 之 凸 部 及 餘 隙 孔 也 可 藉 下 1 1 訂 述 方 法 形 成 〇 1 (1)首先 金屬片全表面（圖 1 b)塗布以液態抗蝕劑（圖 1 1 1 a ) 藉加熱去除溶劑 抗蝕劑Μ負膜遮蓋（圖 1 ，C ) 1 I 負 膜 係 製 備 成 留 下 抗 蝕 劑 於 待 安 裝 半 導 體 晶 片 之 凸 部 上 9 1 1 線 抗 蝕 劑 暴 露 於 紫 外 光 及 未 曝 光 部 分 經 溶 解 及 Μ 溶 劑 如 1% 1 碳 酸 納 水 溶 液 去 除 0 J 1 (2)預定厚度之金屬片藉蝕刻溶解 >及然後溶解及去除 1 1 抗 蝕 劑 0 1 I (3)上及下表面再度塗布Μ液體抗蝕劑 ，具有金靨凸部 1 1 I 用 孔 之 負 膜 置 於 上 表 面 上 9 負 膜 儀 製 備 成 可 遮 蔽 餘 隙 孔 部 1 1 之 光 線 9 該 負 膜 置 於 下 表 面 上 9 所 得 集 合 暴 兹 於 紫 外 光 0 1 1 (4)於餘隙孔部分之抗蝕劑經溶解及去除 ，然後二表面 1 1 藉 蝕 刻 方 法 蝕 刻 而 形 成 餘 隙 孔 (圖1， d) 〇 1 1 本紙張尺度適用中國國家榇準（CNS ) A4規格（2丨0X297公釐） -19- 401723 A7 B7 經濟部中央橾準局貝工消費合作社印製 五、發明説明（17) 1 1 本 發 明 中 t 雙 邊 鍍 金 羼 層 合物 也可由 前 逑 具 有 凸 部 及 餘 1 1 | 隙 孔 之 金 臛 Η 藉 下 述 方 法 製 備。 1 1 (5.)至於於形成金靥凸部該邊之預浸物片（圖 1 f) 具 請 先 1 1 有 孔 略 大 於 凸 起 位 置 凸 部 面 積的 低流動 性 或 非 流 動 性 預 浸 閱 讀 背 面 1 1 物 片 9 含 樹 脂 或 樹 脂 層 之 銅 箔設 置於形 成 金 屬 凸 部 該 邊 上 之 1 注 9 具 樹 脂 含 量 及 樹 脂 流 動 性 足夠 填補於 餘 隙 孔 之 高 流 動 性 意 事 1 項 1 預 浸 物 片 (圖1 t g) 含 樹 脂 或樹 脂層之 銅 箔 提 供 於 另 一 邊 再 填/ 1 寫ί— 本 頁 装 1 t 及 視 需 要 具 有 孔 略 大 於 金 屬凸 部之金 靨 箔 (圖1 e) 或 單 邊 鍍 金 羼 箔 層 合 物 係 設 置 於兩 邊上。 1 1 (6)所得集合於加熱及加歷較佳於真空層叠成形而使其 1 I 整 合 一 體 藉 此 形 成 具 有 金 屬凸 部暴露 於 一 面 上 之 金 靥 芯 1 訂 插 入 型 雙 邊 鍍 金 廳 箔 層 合 物 ，其 係用於 半 導 體 塑 膠 封 装 體。 1 本 發 明 中 * 雙 邊 鍍 金 靥 箔 層合 物，其 層 合 物 為 多 層 層 合 1 1 物 者 也 可 藉 下 述 方 法 生 產 〇 1 1 (5)作為於金屬凸部形成- -邊之預浸物片 低流動性或 1 線 非 流 動 性 預 浸 物 (圖5 η薄 片具 有孔略 大 於 凸 部 面 積 於 凸 1 I 起 位 置 樹 脂 片 或 施 用 樹 脂 層設 置於金 屬 凸 部 形 成 該 邊 上 1 丨 I 9 雙 邊 薄 Η (圖5 f r)其具有電路形成於 一 面 及 具 有 一 表 面 1 1 視 需 要 經 化 學 處 理 9 或 多 層 薄片 係設置 於 凸 部 外 側 ♦ 參 一 高 1 1 流 動 性 預 浸 物 片 (圖5 > g)具有樹脂含量及樹脂流動性足夠 1 | 填 補 於 餘 隙 孔 者 9 樹 脂 h 赘 含樹 脂之銅 萡 或 施 加 樹 脂 層 係 1 I 設 置 於 另 一 面 上 及 金 靨 箔 (圖5 ，e)或單邊鍍金屬箔層合 1 1 I 物 設 置 於 其 上 0 1 1 (6)所得集合於加熱及加壓下較佳於真空下層叠成形而 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20 _ 401723 A7 B7 經濟部中央標準局負工消費合作社印製 五、發明説明{18) 1 1 使 其整 合 一 體 1 藉此 形 成 一 具有 金 靥 凸 部 於 一 表 面上之金 1 1 靨 芯嵌 入 型 雙 邊 鍍金 靨 萡 層 合物 其 係 用 於 半 導 體塑膠封 1 1 裝 體。 /-—^ 請 先 1 1 閱 I 前述 金 靥 片 嵌 入型 雙 邊 鍍 銅層 合 物 之 用 途 如 下 0 讀 背 1 ί I (7)尺寸略小於餘隙孔導體直徑之通孔Κ鑽頭 雷射等 之 1 製 作於 刖 述 金 靨 片嵌 入 型 雙 邊鍍 銅 層 合 物 孔 壁 及金屬片 悬 事 1 項 1 係 以樹 脂 組 合 物 絕緣 及 用 作 正及 反 電 路 傳 導 用 通 孔（圖1， 再 填 1 |( 装 h) ，及 至 少 — 通 孔係 連 结 至 金屬 片 用 作 散 熱 用 通 孔且鍍敷 頁 1 Μ 金靥 0 1 1 (8)然後電路形成於正面及反面上 1 I (9)至少除接線墊 焊珠墊及其上將安裝半導體晶片之 1 訂 金 屬塗 布 外 之 部 分塗 布 Μ 鍍 敷阻 罩 及 以 鎳 或 金 鍍敷而製 1 1 備 印刷 電 路 板. 0 半導 體 晶 片 (圖1 j)係使用含金麗粉之専 1 1 電 或導 熱 黏 合 劑 黏合 且 固 定 於印 刷 電 路 板 之 金 鼷 凸部（圖1 1 1 9 k)， 接 著 接 線 (圖1 1) Μ樹 脂 包 囊 (圖1 m)及附接焊 1 線 珠 (圖1 η) 如 此形 成 多 層半 導 體 塑 膠 封 装 體 0 r I 本發 明 中 具 有 盲通 孔 之 半 導體 塑 膠 封 裝 體 也 可 於前述步 1 r 驟 (8)形成正及反電路後藉下列程序生產 3 1 1 (9)僅覆蓋半導體晶片安裝金屬暴露部之孔係使用反鏜 1 1 孔 機製 作 於 非 流 動性 或 低 流 動性 預 浸 物 (圖4 P ) ，及 1 w in 1 1 厚 之電 解 綢 箔 (圖4， e)置於其上 0 1 I (10)所得集合藉層叠成形整合 一 體 〇 1 1 Ι (1 1 )存在於形成通孔 之 表 面部 分 之 铜 箔 藉 蝕 刻 去除，Μ 1 1 二 氧化 碳 雷 射 形 成通 孔 (圖4 ，q ) > 進 行 去 除 污 m 處理，及 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -21- 五、發明説明（19) A7 B7 經濟部中央標準局員工消費合作社印製 敷部後 餘 形中高 片表及 自屬板塗成 ， 鍍凸然 及 刻驟較 屬 一， U 來金母 ，計罩 靨，， 部 蝕步Μ金另部7r因至至 。劑設阻 金上線。凸 藉刻液。之而凸15¾。導部 成蝕膜用 貴面接η)片 ，蝕刻孔言面一ag上傳凸 形抗負熱 行表著，屬 上於蝕隙換表之 Μ 面分屬 上體該散 進部接 Μ 金 分及及餘 。一 b 一部金 面液，之 圖 1C 片 及凸，(i成 部，，及成於 另裝之 兩以上部 0 晶 0)至分珠形 面上上部形起 Μ 部 於安面 片布其凸 ， 合部焊時 表面面凸序凸 ^凸@||成接一 屬塗於面 。Μ 黏片接同. 一 一表成程而g$二 £ 形直另 金面蓋反 敷(B線晶附序 片另成形列因 h 之M可片於 於表覆及 鍍罩接體性程 靨於形時下造 部晶露 法全膜部 坟片安 銅阻藉導擇列 金置部同藉構 W 凸體暴 方片負凸 Μ 敷j)半選下 於劑凸此可部 u^lT-用導過 述屬一之 著鍍，裝及藉 置蝕至藉部凸 熱半通 下金及片 接 MB4安1B)種 劑抗送，凸一KTTU7 散由散 藉之，晶 ， 蓋(1待，一 蝕之吹上片少5iu 圖，係擴 如層劑體 膜覆片之 Μ 供 抗鏠懕面羼至圖Ϊ®如成熱量 例内溶導 薄面晶片ί 提。之開低一金成。 ·，形之熱。可成除^1 Κ 正體屬囊也法部或以另中形痕 中上散故板部構去固 蓋於導金包明方凸孔液至明而凹 明面擴，路凸待熱待 覆2)半層脂發之成隙刻送發紋 一 ^ 發一體體電述先加下 面(1，内樹本孔形餘蝕吹本壓有 S 本片導全刷前首被留 反 後為 Μ 隙 成，壓 經面圖 靥半片印 層可 -------------f------ΐτ------線、. (請先閱讀背面之注意事項再填^(本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 22 A7 B7 經濟部中央揉準局員工消費合作社印製 五、發明説明（20) 1 1 接 著 Μ 紫 外 光 照 射 及 藉 溶 解 去 除 未 曝 光 部 分 0 然 後 蝕 刻 去 1 1 除 預 定 厚 度 之 金 屬 片 t 然 後 抗 蝕 劑 藉 溶 解 去 除 〇 1 1 如圖8所示， 待安裝半導體晶片之凸部係於組成内層之 請 先 1 1 金 屬 片 面 上 形 成 9 凸 部 可 形 成 於 金 屬 Η 之 對 應 於 印 刷 電 閲 讀 背 面 1 1 路 板 緣 部 之 該 部 分 1 故 凸 部 係 暴 露 於 正 面 及 反 面 上 〇 前 述 之 1 注 \ 凸 部 藉 般 意 1 緣 部 之 凸 部 係 用 於 散 熱 〇 刖 述 金 靨 片 之 可 已 知 事 1 項 1 方 法 例 如 冷 加 工 熱 軋 側 錄 (Ρ Γ 0 file )加工形成 而非採 再 重( 1 裝 1 用 前 述 蝕 刻 方 法 〇 又 相 同 或 不 同 品 質 之 金 羼 Η 可 Μ 黏 合 劑 本 頁 如 具 有 絕 佳 導 熱 率 之 銅 糊 黏 合 至 平 坦 光 滑 金 靥 片 上 〇 1 1 如圖9所示 安裝半導體晶片之凸部可形成於待構成内 1 | 層 之 金 靥 片 一 面 上 及 凸 部 可 形 成 金 靥 片 之 對 應 於 印 刷 電 1 訂 路 板 緣 部 之 部 分 上 故 凸 部 暴 露 於 反 面 上 〇 1 圖1 0顯示 一 具 mm 體 例 其 中 安 裝 半 導 體 晶 片 之 凸 部 係 形 成 於 1 1 金 屬 Η 一 面 上 預 浸 物 樹 脂 片 塗 層 及 含 樹 脂 之 金 屬 萡 1 1 中 之 至 少 一 者 係 設 置 於 金 靥 片 之 兩 面 中 之 一 面 上 預 浸 物 1 線 9 樹 脂 片 塗 層 及 含 樹 脂 之 金 臛 萡 中 之 至 少 —· 者 係 設 置 於 1 I 金 屬 片 兩 面 之 另 一 面 上 金 靥 箔 係 設 置 於 不 含 金 屬 萡 之 樹 1 ί 脂 層 上 9 所 得 集 合 於 加 熱 及 加 壓 下 層 叠 成 形 而 製 備 鍍 金 靨 1 1 范 層 合 物 9 及 散 熱 用 通 孔 係 由 反 面 形 成 於 金 靥 片 因 而 到 達 1 1 金 鼷 Η 〇 所 形 成 之 通 孔 係 藉 金 鼷 鍍 敷 而 以 金 靨 填 補 0 1 I 根 據 本 發 明 提 供 一 種 半 導 .體 塑 膠 封 裝 體 其 係 構 造 成 1 1 I 可 經 由 金 屬 片 釋 放 產 生 的 熱 量 該 封 裝 體 之 散 熱 率 絕 佳 且 1 1 1 不 會 由 半 導 體 晶 片 下 方 吸 水 1 因 此 可 顯 著 減 少 爆 米 花 現 象 1 1 的 發 生 9 也 提 供 其 製 法 0 又 根 據 本 發 明 提 供 一 種 適 合 用 於 1 1 本紙張尺度適用中國國家標準（CNS)A4規格（ 210X297公釐） -23 - 五、發明説明（21) 導 半 之 佳 絕 能 效 濟 經 及 產例 量實 說 J 例比 實量 照重 參份 別 Γ 特示 將表 ηκ 發否 本定 規 A7 B7 塑 如 體 明 法 製 其 及 體 裝 封 膠 行 另 除 J 份 厂 中 其 後 經濟部中央標準局貝工消費合作社印製 實例1 900份2,2-贰（4-氛酸根苯基）丙烷及100份贰（4-順丁烯 二藤亞胺苯基）甲烷於150 °C熔化且任其以攪拌反應4小時 而製備預聚物。預聚物溶解於異丁嗣與二甲基甲醢胺之混 合溶劑。於其中加入400份雙酚A型環氧樹脂（商品名：愛 匹口（Epikote)lOOl，Yuka-Shell環氧樹脂公司供給）及 600份甲酴甲階酚醛樹脂型環氧樹脂（商品名：ESC N-2 20F ，住友化學公司供給），此等材料經均勻溶解及混合。又 至於催化劑，0.4份辛酸鋅與此等材料經溶解及混合。所 得混合物内加人5 0 0份無機填充劑（商品名：滑石P - 3，日 本滑石公司供給）及此等材料均質攪拌混合而製備清漆A。 前述清漆用於浸潰l〇〇wm厚玻璃绷物，浸潰妥之玻璃織 物於150T0乾燥而製備厚105w π之半固化低流動性預浸物（ 預浸物B 1 )，其具有膠凝時間於1 70 1C為0秒及樹脂流動性 於170°C於20kgf/cm2經歷5分鐘為60wm。 又該浸潰妥之玻璃孅物於1451C乾燥製備厚107W m之半 固化高流動性預浸物（預浸物Cl)，具有膠凝時間於170 °C 為1 2 0秒及樹脂流動性1 3 in π。 它方面厚 200« in 且含有 Cu: 97 . 3wt« · Fe ： 2.5wt«， P ： O.lwtS：，Zn: 0.07wtiK及Pb: 0.03wtS；之合金設置於内曆金 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） ~ 24 ~ ^^^1- ^^^1 HI· In nn - - 1 m m. I n (請先閱讀背面之注意事項再填 M本頁)TT A7 B7 Printed by the Consumers' Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs. 5. Description of the invention (15) 1 1 By setting an inner gold plate with a size close to the same size as the printed circuit board, close to 1 1 Set at least in the center of the thickness of the printed circuit board. An exposed metal bump 1 1 is fixed on the __. Surface of the printed circuit board —. The semiconductor wafer is borrowed / -s Please! First, connect the semiconductor wafer to the surface of the printed circuit board formed near it. Read 1 Back 1 A signal propagation circuit conductor M Gold-plated 羼 through-hole conductor is connected to at least 1 of the printed surface Note the signal propagation circuit conductor on the surface of the circuit board to the other thing 1 I formed on the printed circuit board-on one side-· Signal Propagating Circuit Conductor or M-Bead Interconnecting Conductor Pad and True Fill / I Resin Encapsulation Conductor wafers 1 Write this page 1 This method includes the following steps' — · 1 | (1) Forming--The convex part is on the--surface of the metal sheet for mounting a semiconductor wafer 1 I 9 and forming-a clearance hole or The slit has a size larger than the diameter of the through-hole for providing 1 1 through-holes for correction and conduction of anti-circuit conductors 1 (2) Setting--Contains-• 'Hole's low flow or non-flow prepreg sheet or 1 1 The resin layer on the side where the gold ridge protrusion is formed, the hole is slightly larger than the protrusion position 1 | The area of the protrusion is provided with a high fluidity prepreg sheet or resin layer on the other side 1 M > The sheet or the The layer has a resin content and a resin flow sufficient to fill the clearance holes 9 1 I, and a gold foil or a single-sided gold-plated 羼 foil laminate is provided on both sides and (3) preferably obtained by vacuum lamination under heating and pressure. Gather to make it 1 1 into one and form — metal core inserted on both sides of gold plating Lithium compound 0 1 I The aforementioned double-sided metal-plated plutonium compound is used to prepare printed circuit boards and semiconductors 1 I body wafers M Thermal adhesives such as silver paste and then bonded to the medium 1 Encapsulated with resin and 1 1 Welding Bead 0 1 1 The foregoing step m is performed as follows: 0 1 1 (4) K drill or laser is used to conduct the circuit before and after manufacturing at a predetermined position. 1 1 This paper size applies to Chinese national standards (CNS M4 specification (210X297 mm)- 18 · A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (16) 1 1 Hole 9 Keep the hole at the same time. The hole wall is not in contact with the inner layer of gold, and a heat sink 1 1 hole is made to make contact. Gold sheet 〇 through hole is processed to remove stains and then M 1 1 gold sheet plating. The circuit is formed on the upper and lower surfaces by known methods. Please remove the gold sheet foil from the convex part of the metal sheet first. Next M plating 〇Semiconductor reading 1 Back 1 Wafer 导电 Contains gold 靥 powder conductive and thermally conductive adhesive adhered to the convex surface of the inner layer of gold 注 1 Note 1 9 Then connect the resin capsule and attach the solder beads ○ thing 1 | The heat generated by the semiconductor passes through the semiconductor The gold cymbal part directly mounted thereon is a body that conducts heat to the gold cymbal sheet, so a structure is used in which at least one plated through f is formed. This page is equipped with 1 hole, and is connected to the aforementioned gold cymbal sheet and the gold cymbal on the lower surface. The pad f therefore comes from the semiconducting '—✓ 1 I awarded the heat of the crystal to the motherboard printed circuit board 0 1 1 I In the present invention, the convex portion and clearance hole of S on the surface of the gold chip can also be borrowed 1 1 Formed by the prescribed method 〇1 (1) First, the entire surface of the metal sheet (Figure 1 b) is coated with a liquid resist (Figure 1 1 a) The solvent resist M is removed by heating to cover Figure 1, C) 1 I negative film is prepared to leave a resist on the convex portion of the semiconductor wafer to be mounted 9 1 1 The line resist is exposed to ultraviolet light and the unexposed part is dissolved and the solvent such as 1% 1 Sodium carbonate solution removes 0 J 1 (2) metal sheet of predetermined thickness is dissolved by etching > and then dissolves and removes 1 1 resist 0 1 I (3) the upper and lower surfaces are coated with M liquid resist again, with gold The convex part 1 1 I is placed on the upper surface with a negative film of a hole 9 The negative film instrument is prepared to shield the light of the clearance hole 1 1 9 The negative film is placed on the lower surface 9 The resulting set is exposed to ultraviolet light 0 1 1 (4) The resist in the clearance hole portion is dissolved and removed, and then the two surfaces 1 1 are etched by an etching method to form clearance holes (Figure 1, d). 〇1 1 This paper size applies to Chinese national standards (CNS) A4 specifications (2 丨 0X297 mm) -19- 401723 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Description of the invention (17) 1 1 The double-sided gold-plated rhenium laminate in the present invention may also be prepared from a gold ridge with a convex portion and a remaining 1 1 | gap in the front ridge by the method described below. 1 1 (5.) As for the prepreg sheet (Fig. 1 f) that forms the edge of the gold ridge convex part, please first 1 1 Low-flow or non-fluid prepreg with holes slightly larger than the area of the convex part at the convex position Read the back 1 1 Object 9 Copper foil with resin or resin layer is placed on the side where the metal protrusions are formed. Note 9 High fluidity intentions with resin content and resin fluidity sufficient to fill the gap holes 1 item 1 Prepreg sheet (Fig. 1 tg) Copper foil with resin or resin layer is provided on the other side for refilling / 1 write — this page is 1 t and gold foil with holes slightly larger than metal protrusions if necessary (Fig. 1 e) Or single-sided gold-plated rhenium foil laminates are provided on both sides. 1 1 (6) The obtained set is better for heating and calendaring than for vacuum lamination to make it 1 I integrated to form a gold core with metal protrusions exposed on one side. 1 Insertion type double-sided gold plating hall foil lamination Materials, which are used in semiconductor plastic packages. 1 In the present invention * a double-sided gold-plated 靥 foil laminate, whose laminate is a multilayer laminate 1 1 can also be produced by the following method 0 1 1 (5) as a pre-impregnation on the formation of metal protrusions--side Object sheet with low fluidity or 1-line non-flowable prepreg (Fig. 5 η sheet has holes slightly larger than the area of the convex portion at the convex 1 I starting position. The resin sheet or the applied resin layer is placed on the metal convex portion to form the edge 1 丨 I 9 Bilateral thin sheet (Fig. 5 fr) which has a circuit formed on one side and has a surface 1 1 Chemically treated as required 9 or multilayer sheets are arranged outside the convex part ♦ See a high 1 1 flowable prepreg sheet (Fig. 5 > g) It has enough resin content and resin fluidity 1 | Those who fill in the gaps 9 Resin h Copper resin containing resin or application of resin layer system 1 I Set on the other side and gold foil (Figure 5, e) or a single-sided metal foil laminated 1 1 I object is placed on it 0 1 1 (6) the resulting set is heated and pressed It is better to laminate and form under vacuum. 1 1 This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) -20 _ 401 723 A7 B7 Printed by the Central Consumers Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. V. Invention Description {18 ) 1 1 Integrate it 1 to form a gold 1 1 core-embedded double-sided gold-plated rhenium laminate with a gold ridge protrusion on a surface, which is used for a semiconductor plastic package 1 1 package. / -— ^ Please read 1 1 first. The purpose of the aforementioned double-sided copper-clad laminate with embedded gold shim is as follows. 0 Read back 1 ί I (7) Through-hole K-bit laser with dimensions slightly smaller than the clearance hole conductor diameter, etc. No. 1 Manufactured from the description of the double-sided copper-plated laminate hole wall and metal sheet suspension of the gold embedded sheet. Item 1 is insulated with a resin composition and used as a through hole for positive and negative circuit conduction (Figure 1, refilled) 1 | (装 h), and at least—the through-holes are connected to the metal sheet for heat-dissipating through-holes and plated with 1 μM gold 靥 0 1 1 (8) Then the circuit is formed on the front and back 1 I (9 ) At least, except for the wiring pads and the bead pads and the metal coating on which the semiconductor wafer will be installed, at least a portion of the M-plated mask and nickel or gold plating are used to prepare a printed circuit board. 0 Semiconductor wafer (Figure 1 j) is based on the use of Jinli powder containing 1 1 electrical or thermal adhesive Close and fix the metal bumps on the printed circuit board (Figure 1 1 9 k), then connect the wires (Figure 1 1) Μ resin capsule (Figure 1 m) and attach the solder 1 wire beads (Figure 1 η) like this Forming a multilayer semiconductor plastic package 0 r I The semiconductor plastic package with blind vias in the present invention can also be produced by the following procedure after forming the positive and negative circuits in the previous step 1 r step (8) 3 1 1 (9) Cover only The holes of the exposed part of the semiconductor wafer mounting metal are made with non-flowing or low-flowing prepreg (Figure 4P) and 1w in 1 1 thick electrolytic silk foil (Figure 4, e ) Placed on it 0 1 I (10) is obtained by stacking forming integration 0 1 1 Ι (1 1) the copper foil existing on the surface part forming the through hole is removed by etching, M 1 1 carbon dioxide laser forms a through hole (Figure 4, q) > Decontamination m treatment, and 1 1 This paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 mm) -21- V. Description of the invention (19) A7 B7 The Ministry of Central Standards Bureau ’s consumer cooperative prints the residual shape of the high-end sheet and its own plate, and the plating is convex and engraved. It ’s one of the master metal, the mask cover, and the etch step. Part 7r is here. Agents set up resistance and go online. Convex by engraving liquid. And convex 15¾. The leading part forms an etched film with a precious surface connected to the η) sheet. The convex surface is etched with a convex anti-negative heat line, which belongs to the upper surface of the etched surface that belongs to the upper body. And more. A b a gold surface liquid, the 1C sheet and convex, (i into the part, and formed on two or more parts 0 crystal 0) to the upper part of the bead-shaped surface from the M part on the surface The convex and convex surfaces of the joints are convex and convex at the time of welding ^ convex @ || Μ sticky sheets are the same. One table is completed and g $ two. The shape is straight and the gold cover is reversely applied (B-line crystal attached sequence film is formed separately. The M of h can be used on the surface and the cover. Cheng Xing's current production of the crystal dew method, the whole film of the grave film, the copper film is used to guide the gold placement of the same structure, and the structure of the W convex body is a negative convex film. u ^ lT-Plate with a book that is described above, install and borrow etched to the borrow part of the heat transfer half-pass gold and the chip to connect MB4A 1B) kinds of agents to resist, convex one KTTU7 scattered by the loan, crystal The cover (1 wait, one etch blows the upper sheet with less 5iu figure, which expands the surface of the film covering layer M to provide the anti-rust surface to the top surface of the thin film wafer as shown in the example of heat generation. Open. Lower one gold. ·, The shape of the heat. Can be divided into ^ 1 Κ The normal body belongs to the sac or the middle part of the shape, and the upper part of the plate is removed to cover the square convex pores of the gold guide to the clear. The concave surface is widened, the road is convex and waiting to be covered. 2) Half of the layer of fat hair is carved with a hairline. ^ The integrated body is described below. (1, the inner tree has a hole-shaped etch, and the pressure is S. The first part of the film guide is brushed, and the front part is left in the back, and the gap is formed into Μ. Print layer can be ------------- f ------ ΐτ ------ line,. (Please read the precautions on the back before filling ^ (this page) This paper Standards are applicable to Chinese National Standards (CNS) A4 specifications (210 × 297 mm) 22 A7 B7 Printed by the Consumers' Cooperative of the Central Bureau of the Ministry of Economic Affairs. 5. Description of the invention (20) 1 1 Then UV exposure and dissolution to remove unexposed parts 0 Then etch away 1 1 Remove the metal sheet t with a predetermined thickness and then remove the resist by dissolving it. 0 1 1 As shown in Figure 8, the convex part of the semiconductor wafer to be mounted is formed on the inner layer. The convex part can be formed on the metal Η corresponding to the printed electronic reading back 1 1 This part of the edge of the circuit board 1 Therefore, the convex part is exposed on the front side and the reverse side. The aforementioned 1 Note \ The convex part borrows the general meaning of the edge part 1 Departments are used to dissipate the heat of the metal. Known things about gold tablets 1 item 1 method examples Cold working hot-rolled side recording (P Γ 0 file) is processed instead of heavy (1 pack 1 using the aforementioned etching method) gold of the same or different quality. Μ Adhesive on this page, such as copper with excellent thermal conductivity The paste is adhered to the flat and smooth gold chip. 01 1 As shown in FIG. 9, the convex part on which the semiconductor wafer is mounted can be formed on the surface of the gold sheet to form the 1 | layer and the convex part can form a gold sheet corresponding to the printed circuit board. 1 The convex part on the edge of the beading board is exposed on the reverse side. Figure 1 0 shows a mm system, in which the convex part on which the semiconductor wafer is mounted is formed on 1 1 metal Η one side of the prepreg resin sheet coating and At least one of the resin-containing metal tin 1 1 is provided on at least one of the two sides of the gold tin plate. The prepreg 1 line 9 is at least one of the resin sheet coating and the resin-containing gold tin --- 1 I The other side of the metal sheet The gold foil is placed on the tree without metal rhenium 1 ί lipid layer 9 and the obtained set is laminated and heated under pressure to prepare gold-plated rhenium 1 1 fan-like laminate 9 and heat dissipation through-holes formed on the reverse side. The gold foil thus reaches 1 1 gold foil. The through hole formed is filled with gold foil 0 1 I by gold foil plating. According to the present invention, a semiconductor is provided. The plastic package is structured as 1 1 I may The heat generated through the metal sheet is excellent in heat dissipation and 1 1 1 does not absorb water under the semiconductor wafer 1 so it can significantly reduce the occurrence of popcorn 1 1 9 also provides its manufacturing method 0 and provides a method according to the present invention Suitable for 1 1 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297mm) -23-V. Description of the invention (21) The best energy efficiency and economic efficiency of the leading half and the actual production amount Participation according to the weight κ Fake this rule A7 B7 Plastics and body sealants are excluded from J copies. In the factory, there are 1,900 copies printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 2,2- 贰 (4- Aromatic phenyl) propane and 100 parts of hydrazone (4-cis butadienephenyl) methane were melted at 150 ° C and allowed to react with stirring for 4 hours to prepare a prepolymer. The prepolymer is dissolved in a mixed solvent of isobutylamidine and dimethylformamide. 400 parts of bisphenol A type epoxy resin (trade name: Epikote 100l, supplied by Yuka-Shell Epoxy Co., Ltd.) and 600 parts of formazan resole phenolic resin type epoxy resin (trade name: ESC N-2 20F, supplied by Sumitomo Chemical Co., Ltd.), these materials are uniformly dissolved and mixed. As for the catalyst, 0.4 part of zinc octoate was dissolved and mixed with these materials. To the resulting mixture, 500 parts of an inorganic filler (trade name: Talc P-3, supplied by Japan Talc Corporation) and these materials were homogenized and mixed to prepare Varnish A. The aforementioned varnish is used for impregnating a 100wm thick glass stretcher, and the impregnated glass fabric is dried at 150T0 to prepare a semi-cured low-flow prepreg (prepreg B 1) with a thickness of 105w π, which has gelation. The time is 0 seconds at 1 70 1C and the fluidity of the resin at 170 ° C and 20 kgf / cm2 for 5 minutes is 60 wm. The impregnated glass frit was dried at 1451C to prepare a semi-cured high-flow prepreg (prepreg Cl) with a thickness of 107 W m. It has a gelation time of 170 ° C for 120 seconds and resin flowability. 3 in π. It has a thickness of 200 «in and contains Cu: 97. 3wt« · Fe: 2.5wt «, P: O.lwtS :, Zn: 0.07wtiK and Pb: 0.03wtS; the alloy is set on the internal calendar gold paper scale applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ~ 24 ~ ^^^ 1- ^^^ 1 HI · In nn--1 m m. I n (Please read the precautions on the back before filling in M page)

、1T 401723 A7 B7 經濟部中央樣準局員工消費合作社印製 五、發明説明 (22) 1 1 屬 片 9 具 有 13 X 13 m m 見 方 尺 寸 及 高 度 1 0 0 ju m 之 凸 部 藉 蝕 刻 1 1 方 法 形 成 而 位 於 50 X 50 mm 見 方 尺 寸 封 裝 體 中 心 〇 I 狀 後 液 體'抗 蝕 劑 施 用 於 前 述 金 靥 片 全 表 面 上 而 形 成 厚 度 請 1 先 1 25 U ffl之塗層， 塗層經乾燥去除溶劑< 具有凸部孔之負膜 閱 讀 1 背 1 置 於 其 上 9 負 膜 置 於 金 靥 片 之 整 個 下 側 〇 餘 隙 孔 Μ 外 部 分 之 1 注 r 暴 露 於 紫 外 光 9 餘 隙 孔 之 抗 蝕 膜 係 1¾ 碳 酸 納 水 溶 液 去 除 意 審 I 項 1 〇 然 後 於 兩 邊 蝕 刻 製 作 直 徑 為 〇. 6 91 ffl之餘隙孔C 再 填/ I 1 金 雇 片 全 表 面 經 處 理 形 成 黒 色 氧 化 铜 前 述 預 浸 物 B具 %( 本 装 頁 1 有 藉 衝 穿 製 作 大 於 凸 部 達 50 U ffl之孔， 預浸物B覆 蓋 於 其 上 '— 1 I 表 面 0 預 浸 物 C覆蓋於其下表面 厚18 A t m 之 電 解 铜 萡 置 於 1 1 1 二 者 上 所 得 集 合 於 2 0 0 t：於 2 0 k g f / C m 2 於30m mH g真空或 1 1 Μ 下 層 叠 成 形 2小時而使其整合為- -體C > 訂 1 於 餘 隙 孔 部 9 於 中 央 雷 射 製 作 直 徑 0 . 25 m m 之 通 孔 ，@而 1 I 不 與 餘 隙 孔 部 之 内 層 金 靨 片 接 觸 0 於 四 角 鑽 孔 直 徑 各 自 為 1 I 0 . 25 坩nt 之 通 孔 因 而 直 接 接 觸 作 為 散 熱 部 之 金 屬 片 0 於 脫 1 1 線 去 污 潰 處 理 後 藉 無 電 鍍 敷 及 電 鍍 進 行 鍍 銅 而 形 成 厚 18 u m 1 鋦 鍍 層 於 孔 0 1 ί 液 體 抗 蝕 劑 施 用 於 其 正 面 及 背 面 及 乾 燥 妖 /、、、 後 正 膜 置 於 1 I 其 上 9 接 著 曝 光 、 顯 像 及 形 成 正 及 反 電 路 〇 同 時 凸 部 上 之 1 1 I 銅 箔 藉 蝕 刻 一 起 去 除 〇 鍍 敷 胆 罩 形 成 於 凸 部 黏 合 墊 部 及 1 1 珠 墊 部 Μ 外 之 其 它 部 分 1 鎳 及 金 進 行 鍍 敷 而 完 成 印 刷 電 1 1 路 板 ύ 1 1 13 X 13 m η 見 方 尺 寸 的 半 導 體 晶 片 銀 糊 黏 合 及 固 定 至 凸 1 I 部 9 然 後 進 行 接 線 9 所 得 集 合 藉 轉 印 模 塑 >λ 含 矽 氧 環 氧 樹 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 401723 A7 B7 經濟部中央標準局貝工消費合作社印製 五、發明説明（23) 1 1 脂 密 封 化 合 物 包 囊 獲 得 半 導 體 封 裝 體 1 及 附 接 焊 珠 0 半 導 1 1 體 封 裝 體 藉 加 熱 熔 化 焊 珠 而 埋 接 至 環 氧 樹 脂 製 成 的 母 板 印 1 1 刷 電 路 板 〇 所 得 半 導 體 塑 膠 封 裝 體 經 評 估 表 1顯示其结 /-—V 請 先 閲 讀 1 | 果 0 1 背 1 實 例 I 2 之 1 注 1 1 提 供 實 例 1之相同預聚物C1， 厚18 t i m 電 解 銅 箔 置 於 其 一 意 睪 項 1 面 上 9 離 形 膜 置 於 另 面 上 所得集合於200 °C於20kgf/ 再 1 裝 1 cm 2 層叠成形2小時而製備單邊鍍銅層合物 > 頁 內 層 之 孽L 製 飼 片 厚 2 0 0 /i m 係 以 實 例 1之相同方式處理形 1 1 成 實 例 1相同大小及相同高度凸部 >又製造直徑0 .6 in in之餘 1 I 隙 孔 9 預 浸 物 Μ 類 u 方 式 置 於 上 及 下 表 面 上 前 述 單 邊 鍍 1 1 訂 m 層 合 物 片 置 於 兩 邊 上 所 得 集 合 係 於 相 同 條 件 下 層 叠 成 1 形 0 1 1 於 餘 隙 孔 部 於 其 中 央 鑽 孔 直 徑 0 . 20 m m 之 通 孔 而 不 接 近 餘 1 1 隙 孔 部 之 金 靥 片 〇 於 四 角 鑽 孔 而 直 接 接 觸 金 羼 片 作 為 散 熱 1 線 部 0 脫 去 污 漬 處 理 後 鍍 銅 係 藉 無 電 鍍 敷 及 電 鍍 進 行 而 形 1 | 成 厚 17 U IB之銅鍍層於孔内 > 1 1 液 體 抗 蝕 劑 施 用 於 正 反 面 上 及 乾 燥 而 去 除 溶 劑 然 後 正 1 1 膜 施 用 於 其 上 9 接 著 曝 光 顧 影 及 形 成 正 及 反 電 路 0 鍍 敷 1 1 阻 罩 形 成 於 凸 部 之 層 合 物 部 分 、 黏 合 墊 部 及 珠 墊 部 以 外 部 1 I 分 9 鎳 及 金 進 行 鍍 敷 > 然 後 於 中 央 銅 片 凸 部 上 之 層 合 物 1 1 I 郤 分 基 材 銑 刀 切 割 去 除 而 完 成 印 刷 電 路 板 〇 1 1 然 後 半 導 體 Μ 實 例 1之相同方式黏合接著以樹脂包囊而 1 1 形 成 半 導 體 塑 膠 封 裝 體 0 所 得 半 導 體 塑 膠 封 裝 體 經 評 估 梦 1 1 本紙張尺度適用中國國家標準（CNS) A4規格（210X297公釐） -26 - A7 B7 經濟部中央樣準局貝工消费合作社印製 五、發明説明 (24) 1 1 表 1顯示其結果c 1 1 比 較 例 1 1 1 使 用 兩 Η 預 浸 物 1 其 係 同 實 例 1之高流動性預浸物Cli > y—v 請 先 1 1 閱 I 電 解 銅 萡 置 於 其 上 下 表 面 上 所 得 集 合 於 1901C 於 20kgf/ 讀 眢 1 f 月 面 \ | C ffl 2 真 空 層 叠 成 形 90分 鐘 獲 得 雙 邊 鍍 銅 層 合 物 〇 直 徑 之 1 注 〇. 25 m m 之 通 孔 鑽 孔 於 預 定 位 置 及 進 行 鍍 銅 〇 思 事 1 項 1 根 據 己 知 方 法 於 前 述 層 合 物 之 上 下 表 面 上 形 成 電 路， 及 再 填 1 f( 装 進 行 鍍 鎳 及 鍍 金 〇 散 埶 用 通 孔 係 形 成 於 待 安 裝 半 導 體晶 片 不 頁 1 部 分 半 導 體 晶 片 Μ 銀 糊 黏 合 於 其 上 及 進 行 接 線 9 接著 1 1 疲 體 密 封 樹 脂 包 囊 (圖1 1) 0 焊 珠 附 接 於 其 上 及 封 裝 體連 接 1 I 於 母 板 〇 所 得 半 専 體 塑 膠 封 裝 體 經 評 估 而 表 1顯示其结果。 1 訂 比 較 例 2 1 比 較 例 1所得印刷電路板於待安裝半導體晶片部分鏜孔 1 1 9 後 厚 20 0 u m 銅 Η Μ 預 浸 物 黏 合 至 其 反 面 上 9 該 預浸 物 1 1 係 經 由 於 加 熱 及 加 壓 下 衝 穿 前 述 非 流 動 性 預 浸 物 製 備， 因 1 線 而 製 備 附 接 有 散 熱 片 的 印 刷 電 路 板 0 Γ I 前 述 印 刷 電 路 板 略 為 啊 變 〇 半 導 體 AS 晶 片 Μ 銀 糊 黏 合至 前 1 1 述 散 埶 片 9 接 著 接 線 及 Μ 液 體 密 封 樹 脂 包 囊 (圖9) >所得 1 1 半 導 體 塑 膠 封 裝 體 經 評 估 而 表 1顯示其结果 > 1 1 實 例 包 括 後 述 實 例 之 測 量 方 法 顯 示 如 後 0 1 | 1) 吸 水 後 之 耐 熱 性 ① JEDE.C標準試驗方法Α1 13- Α層次3 1 I * • 於 301C 於 60¾相對濕度處理預定時間後 |及於3週 期220 1 1 I V 再 流 動 焊 接 後 f 藉 觀 察 剖 面 及 作 電 檢 査 而 評 估 基 材是 否 1 1 故 障 〇 1 1 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公釐） -27 - 401723 A7 B7 五、發明説明（25) 2) 吸水後之耐熱性②：JEDEC標準試驗方法AU3-A層次2 :於85C於60¾相對濕度處理預定時間後（至多168小時）， 及於3週期220 °C再流動性焊接後，藉観察剖面及作電檢査 而評估基材是否故障。 3) 玻璃化溫度：藉DMA方法測量。 4) M壓力媧處理後之絕緣電阻值：樣本於121 °C於二大 氣壓下處理預定時間，然後於2 5 Ό於6 0 3：相對濕度處理2小 時，然後於施加500 V DC歷60秒期間，測量二端子間之絕緣 電阻值（線/空間= 70/im/70Wffl)。 5) 遷移電阻：於8510及85¾相對濕度施加500VDC，測量 端子間之絕緣電阻值。 (請先閱讀背面之注意事項再填寫本頁) .· 、?τ 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家榇準（CNS ) A4規格（210X297公釐） -28 - 401723 A7 B7 五、發明説明（26) 表 經濟部中央標準局貝工消费合作社印笨 實例1 實例2 比較例1 比較例2 吸水後之 附熱性① 尋常狀態 未故陣 未故障 未故障 未故障 48小時 未故陣 未故障 未故陣 未故障 96小時 未故障 未故障 未故障 未故陣 120小時 未故障 未故障 未故障 未故陣 144小時 未故障 未故障 部分剝雛 未故陣 168小時 未故障 未故障 同上 部分剝離 吸水後之 耐熱性② 尋常狀態 未故陣 未故障 未故陣 未故障 24小時 未故障 未故障 部分剝離 未故陣 48小時 未故障 未故障 大剝離 部分剝離 72小時 未故障 未故陣 同上 96小時 未故障 未故陣 斷媒 同上 120小時 未故陣 未故障 - 鰣4 144小時 未故障 未故陣 一 168小時 未故障 部分剝維 - 一 Tg (°C ) 234 - — — 壓力鍋試 驗後之絕 緣電阻 (Ω ) 尋常狀態 5 X 10 14 - - 200小時 3 X 10 12 500小時 4X 1011 700小時 7 X 10 10 1000小時 IX 10 10 遷移電阻 (Ω ) 尋常狀態 6 X 10 13 - - 一 200小時 6X 1011 500小時 3X 1011 700小時 7 X 10 10 1000小時 6 X 10 10 請 先 閲 之 注 C E X .=比較例 Tg =玻璃化溫度、 1T 401723 A7 B7 Printed by the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs V. Description of the invention (22) 1 1 The piece 9 has a 13 X 13 mm square size and a height of 1 0 0 ju m. The convex part is etched 1 1 Method It is formed and located at the center of a 50 X 50 mm square-sized package. A liquid “resist” is applied on the entire surface of the aforementioned gold foil to form a thickness of 1 25 U ffl. The coating is dried to remove the solvent. < Negative film reading with convex holes 1 Back 1 placed on it 9 Negative film placed on the entire lower side of the gold diaphragm 0 Clearance hole M Outer part 1 Note r Exposure to UV light 9 Clearance hole Etching film system 1¾ Sodium carbonate aqueous solution to remove I item 1 〇 and then etch on both sides to make clearance holes C. 6 91 ffl C fill / I 1 The entire surface of the gold film is treated to form ocher copper oxide The aforementioned prepreg B has a% (this page 1 has a hole larger than 50 U ffl by punching through, and the prepreg B covers it'— 1 I surface 0 prepreg C covers its lower surface 18 A tm thick electrolytic copper tin placed on 1 1 1 and collected at 2000 t: laminated at 20 kgf / C m 2 at 30 m mH g vacuum or 1 1 M for 2 hours for integration For--body C > Order 1 to the clearance hole 9 to make a through hole with a diameter of 0.25 mm at the central laser, @ 而 1 I does not contact the inner gold plate of the clearance hole 0 to drill holes at the four corners The diameter of each through hole is 1 I 0. 25 crnt. Therefore, it directly contacts the metal piece as a heat sink. After the 1 1 wire decontamination treatment, copper plating is performed by electroless plating and electroplating to form a thickness of 18 um 1 鋦. In the hole 0 1 ί liquid resist is applied to its front and back and dry demon / ,,, The positive film is placed on 1 I and 9 is then exposed, developed, and the positive and negative circuits are formed. At the same time, the 1 1 I copper foil on the convex portion is removed by etching. The plated bile mask is formed on the convex adhesive pad portion and 1 1 Bead pad part M Other parts 1 Nickel and gold are plated to complete the printed electricity 1 1 Circuit board 1 1 13 X 13 m η A square-sized semiconductor wafer with silver paste is bonded and fixed to the convex part 1 I part 9 and then wired 9 Collected by transfer molding & lambda λ Silicone-containing epoxy resin 1 1 1 This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) 401723 A7 B7 Shellfish Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs Printed 5. Description of the invention (23) 1 1 Encapsulated with a fat-seal compound to obtain a semiconductor package 1 and attached solder beads 0 Semiconducting 1 1 The body package is embedded in a mother made of epoxy resin by heating and melting the solder beads Board printing 1 1 Brush circuit board 〇 Semiconductor plastic package after evaluation Table 1 shows its knot / -— V Please read 1 | Fruit 0 1 Back 1 Example I 2 of 1 Note 1 1 Provide the same prepolymer C1 of Example 1 with a thickness of 18 tim electrolytic copper foil On one side of the item, a 9-piece release film was placed on the other side and assembled at 200 ° C at 20 kgf / 1 cm 2 and laminated for 2 hours to prepare a single-sided copper-clad laminate > inner sheet Sin L Feeding sheet thickness 2 0 0 / im is processed in the same manner as in Example 1 1 into Example 1 convex parts of the same size and the same height > and the remaining diameter of 0.6 in in 1 I gap 9 The prepreg M type u method is placed on the upper and lower surfaces of the aforementioned single-sided plating 1 1 The order m laminated sheet is placed on both sides The obtained set is stacked under the same conditions into a shape of 0 1 1 in the clearance hole at Its central A through hole with a hole diameter of 0.20 mm, not close to the remaining 1 1 gold chip of the gap part 0 drilled in the four corners and directly contact the gold chip to dissipate heat 1 wire part 0 copper plating after removing the stain treatment by electroless plating Coating and plating process 1 | 17 U IB copper plating in the hole > 1 1 liquid resist is applied on the front and back side and dried to remove the solvent and then a positive 1 1 film is applied on it 9 followed by exposure Shadow and formation of positive and negative circuits 0 Plating 1 1 The mask is formed on the laminate part of the convex part, the bonding pad part and the bead pad part are plated with 1 I and 9 nickel and gold, and then on the central copper sheet The laminate 1 1 I on the convex part was cut and removed by the substrate milling cutter to complete the printed circuit board. 0 1 1 Then the semiconductor M was adhered in the same manner as in Example 1 and then encapsulated with resin to form a semiconductor plastic package. 1 Semiconductor plastic package body Evaluation Dream 1 1 This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) -26-A7 B7 Printed by the Bayer Consumer Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs 5. Description of the invention (24) 1 1 Table 1 shows The result c 1 1 Comparative Example 1 1 1 Two maggots of prepreg 1 were used, which is the same as the high fluidity prepreg Cli of Example 1. Cli > y-v Please read 1 1 first. The obtained set was collected at 1901C at 20kgf / read 1 f lunar surface | | C ffl 2 vacuum laminated forming for 90 minutes to obtain bilateral copper-plated laminates 〇1 of diameter Note 0.25 mm through-holes were drilled at predetermined positions and plated Copper 〇Thinking item 1 Item 1 According to a known method, a circuit is formed on the upper and lower surfaces of the aforementioned laminate, and 1 f (filled with nickel and gold plating through holes for dispersing It is formed on the semiconductor wafer to be installed. Page 1 Part of the semiconductor wafer M Silver paste is adhered to it and connected 9 Then 1 1 Tire-sealed resin capsule (Figure 1 1) 0 Solder beads are attached to it and the package is connected 1 I The semi-corporeal plastic package obtained on the motherboard 0 was evaluated and Table 1 shows the results. 1 Order Comparative Example 2 1 The printed circuit board obtained in Comparative Example 1 was bored in the semiconductor wafer portion to be mounted 1 1 9 After the thickness of 20 0 um CuΗM prepreg was adhered to the reverse surface 9 The prepreg 1 1 was passed through Punch through the aforementioned non-flowable prepreg under heating and pressure, and prepare a printed circuit board with a heat sink attached because of 1 wire. 0 Γ I The aforementioned printed circuit board is slightly changed. Semiconductor AS chip M silver paste is bonded to the front. 1 1 Describing the loose sheet 9 Next, wiring and M liquid-sealed resin encapsulation (Fig. 9) > Obtained 1 1 The semiconductor plastic package was evaluated and Table 1 shows the results > 1 1 Examples The measurement methods including the examples described below are shown as After 0 1 | 1) Heat resistance after water absorption ① JEDE.C standard test method Α1 13- Α level 3 1 I * • After 301C and 60¾ relative humidity treatment for a predetermined time | and after 3 cycles of 220 1 1 IV reflow welding After f Check the profile and make an electrical inspection to evaluate whether the substrate is faulty. 1 1 〇 1 1 This paper size is applicable to the Chinese National Standard (CMS) A4 (210X297 mm) -27-401723 A7 B7 V. Description of the invention (25) 2) Water absorption Later heat resistance ②: JEDEC standard test method AU3-A Level 2: After 85C at 60¾ relative humidity for a predetermined time (up to 168 hours), and after 3 cycles of 220 ° C reflow welding, check the profile and make Electrical inspection to assess substrate failure. 3) Glass transition temperature: measured by DMA method. 4) Insulation resistance value after treatment with M pressure: The sample is processed at 121 ° C at 2 atmospheres for a predetermined time, then at 2 5 Ό at 6 0 3: relative humidity for 2 hours, and then applied with 500 V DC for 60 seconds. During this period, measure the insulation resistance between the two terminals (line / space = 70 / im / 70Wffl). 5) Migration resistance: Apply 500VDC at 8510 and 85¾ relative humidity to measure the insulation resistance between the terminals. (Please read the precautions on the back before filling out this page). ·, · Τ Printed by the Central Consumers Bureau of the Ministry of Economic Affairs, Consumer Cooperatives This paper is printed in accordance with China National Standards (CNS) A4 (210X297 mm) -28-401723 A7 B7 V. Description of the invention (26) Table 1 Benben Consumer Cooperative Co., Ltd. of the Central Standards Bureau of the Ministry of Economic Affairs Example 1 Example 2 Comparative Example 1 Comparative Example 2 Heat absorption after water absorption ① Normal state, no failure, no failure, no failure, no failure for 48 hours No failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, 144 hours, no failure, no failure, partial failure Same as above. Partial peeling and heat resistance after absorbing water. ② Normal state, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no damage 96 hours of failure without failure. Interruption of the same. 120 hours of failure without failure. 鲥 4 144 hours without failure. One 168 hours of non-failure partial peeling-One Tg (° C) 234---Insulation resistance (Ω) after pressure cooker test Normal state 5 X 10 14--200 hours 3 X 10 12 500 hours 4X 1011 700 hours 7 X 10 10 1000 hours IX 10 10 Migration resistance (Ω) Normal state 6 X 10 13--One 200 hours 6X 1011 500 hours 3X 1011 700 hours 7 X 10 10 1000 hours 6 X 10 10 Please read the note CEX first. = Comparison Example Tg = glass transition temperature

I 頁 裝 訂 缚 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 29 401723 A7 B7 五、發明説明（27) g施例3 清漆冉係以實例1之相同方式製備。厚lOOwm之玻璃織物 浸漬Μ前述清漆A及於150°C乾燥製備厚105win之半固化低 流動性預浸物（預浸物B2)，具有膠凝時間於170 °C為7秒及 樹脂流動性於1701C於20ksf/cm2歷5分鐘為110«m。又也 製備厚109« in之高流動性預浸物（預浸物C2)具有膠凝時間 11 4秒及樹脂流動性13mm。 經濟部中央標準局貝工消费合作社印製 (請先閲讀背面之注意事項再填寫本頁) 提供厚250wm之飼Η其將構成内層，液體抗蝕劑施用於 金羼Η全表面上而形成厚20«Π之塗層，塗層經乾燥去除 溶劑。然後於表面上留下抗蝕酬*而留下8 X?min見方尺寸 之凸部於50X 50mni見方尺寸之金靥片中心，及於反面抗蝕 劑係留在全表面上*僅銅片之上表面被蝕刻而形成8X8m· 之見方尺寸高l〇〇«m凸部用於安裝半導體晶片。去除抗蝕 劑後，再度施用液體抗蝕劑*形成厚20um之塗層，塗層 經乾燥。具有一孔用於金屬凸部之負膜覆蓋於表面上，無 孔負膜覆蓋於反面上，Μ紫外光照射後，餘隙孔部之抗蝕 劑膜係M 1¾碳酸納水溶液去除。然後藉蝕刻兩面製作直徑 0.6. mu之餘隙孔。 然後金鼷片全表面經處理形成黑色氧化銅，前述預浸物 B具有藉衝穿製作大於凸部達12/im之孔，預浸物B覆蓋於 其上表面。預浸物C覆蓋於其下表面，厚18wm之電解銅萡 置於二者上，所得集合於200 °C於20kgf/cm2於30mniHg真 空或Μ下層叠形成2小時而使其整合為一體。 於餘隙孔部，於中央Μ蕾射製作直徑0.25mm之通孔，因 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -30- 401723 B7 經濟部中央標準局貝工消費合作社印製 五、發明説明（28) 1 1 而 不 與 餘 隙 孔 部 之 内 層 金 靥 片 接 觸 ο 於 四 角 鑽 孔 直 徑 各 1 1 為 0 . 25 a m 之 四 散 熱 通 孔 9 因 而 直 接 接 觸 作 為 散 熱 部 之 金 靥 1 I 片 〇 於 脫 去 污 湏 處 理 後 9 藉 無 電 鍍 敷 及 電 鍍 進 行 鍍 銅 而 形 請 先 1 1 成 厚 17 U m之铜锻層.於孔c 閲 讀 背 面 1 [ 1 | 液 體 抗 蝕 劑 施 用 於 其 正 面 及 背 面 及 乾 燥 妖 後 正 膜 置 於 之 1 注 r 其 上 9 接 著 曝 光 Λ 顯 像 及 形 成 正 及 反 電 路 同 時 凸 部 上 之 意 事 1 項 1 銅 萡 藉 蝕 刻 起 去 除 〇 鍍 敷 胆 罩 形 成 於 凸 部 、 黏 合 墊 部 及 再 f { 本 頁 1 装 1 珠 墊 部 Μ 外 之 其 它 部 分 Μ 鎳 及 金 進 行 鍍 敷 而 完 成 印 刷 電 路 板 〇 13 X 13 m is 見 方 尺 寸 的 半 導 體 晶 片 Κ 銀 糊 黏 合 及 固 定 1 1 至 凸 部 9 然 後 進 行 接 線 所 得 集 合 藉 轉 印 模 塑 Μ 基 於 環 氧 1 I 樹 脂 密 封 化 合 物 包 囊 獲 得 半 導 體 封 裝 體 及 附 接 焊 珠 0 半 1 訂 導 體 封 裝 體 連 接 於 母 板 上 〇 所 得 半 導 麝翁 體 塑 膠 封 裝 體 經 評 估 1 9 表2顯示其结果 > 1 1 實 例 4 1 1 使 用 同 實 例 1預浸物C 1之預浸物片 > 1 8 / 1 Π) 電 解 銅 箔 置 於 1 線 一 表 面 上 9 離 形 膜 置 於 另 一 面 上 所得集合於200 Ρ於 1 I 20kg f / C環 2 於30 m m Hg 或 Μ 下 之 真 空 層 叠 成 形 獲 得 單 邊 鍍 銅 ί 層 合 物 〇 合 金 片 含 有 C u 99 .8 6 w Fe 〇. 11 ««及P 1 1 0 . 03 wU經製備並Μ實例3之相同方式加工而形成具有面積 1 1 5 < 5 m in 見 方 尺 寸 及 高 1 0 0 ju m 之 凸 部 0 Μ 相 同 方 式 製 作 餘 隙 1 | 孔 0 然 後 具 有 一 孔 用 於 金 靥 凸 部 之 前 述 預 浸 物 B置於上表 1 | 面 上 9 前 述預浸物c置於下表面 ，前述單邊鍍飼層合物置 1 1 1 於 其 外 側 9 所 得 集 合 藉 層 叠 成 形 9 然 後 製 備 印 刷 電 路 板 0 1 1 於 餘 隙 孔 部 於 中 心 鑽 孔 直 徑 0 . 2C m σ 之 通 孔 因 而 不 接 觸 餘 隙 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _ 3 1 - 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（⑵） 孔部之金屬片。鑕孔散熱通孔而接觸金靥片。脫去污潰處 理後，藉無電鍍敷及電鍍進行鍍銅而形成厚18 wm之銅鍍 層於孔内。 液體抗蝕劑施於其正反面且乾燥去除溶劑，然後正膜施 用於其上接著曝光及顯像形成正及反電路。鍍敷阻罩形成 於安裝半導體晶片之凸部、黏合塾部及珠墊部Μ外部分， 及Μ鎳及金進行鍍敷。金靥凸部上方基材藉由Μ銑刀切割 去除而完成印刷電路板。半導體晶銀糊黏合於其上， 然後進行接線，所得集合Μ樹脂包囊，及附接焊珠獲得半 導體封裝體。半導體封装體係以實例3之相同方式連接至 母板。所得半導體塑膠封裝體經評估而表2顯示其结果。 比較例3 500份環氧樹脂（商品名：Epikote 1045)，500份環氧樹 脂（商品名ESCN22F)，300份二氰基二胺基及2份2-乙基咪 唑溶解於異丁酮與二甲基甲醢胺之混合溶劑，所得溶液用 於浸潰厚l〇〇w m之玻璃继物，製備於170 °C之膠凝時間為 10秒及樹脂流動性為98 μ m之非流動性預浸物（預浸物D)， 及具有膠凝時間150秒及樹脂流動性18mm之高流動性預浸 物（預浸物E)。使用兩片預浸物E*經由於1701C於20kgf/ cm2於30mmHs真空層叠成形2小時製備單邊锻銅層合物。 随後K比較例1之相同方式製埔印刷電路板。安裝半導體 晶片部分Μ鏜孔櫬鏜孔*厚200/im銅片以類似方式以預浸 物黏合至反面，該預浸物係經由於加熱加壓下衝穿前述非 流動性預浸物D至附接散熱片的印刷電路板製成。略微引 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 32 ------L----裝------訂------線 (請先閱讀背面之注意事項再本頁) A7 B7 五、發明説明（30) 起此板崎變。半導體晶片直接Μ銀糊黏合至前述敗熱片， 接著接線連接及Μ液體環氧樹脂包囊。焊珠附接於金屬附 接面之反面上。所得半導體塑膠封裝體Μ類似方式連接至 母板。評估半導體塑膠封裝體，表2顯示其结果。 請 先 閲 背 A 之 注 意 事 項 再 f( 本 頁 裝 訂 線 經濟部中央標準局貝工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 33 401723 A7 B7 五、發明説明（31) 經濟_中央標準局員工消费合作社印製 表 2 實例3 實例4 比較例1-2 比較例3 吸水後之 尋常狀態 未故陣 未故障 未故障 未故障 耐热性① 24小時 未故障 未故障 未故障 未故障 48小時 未故障 未故障 未故障 未故障 72小時 未故陣 未故障 未故障 未故障 96小時 未故障 未故障 未故障 部分剝離 120小時 未故陣 未故陣 部分剝雛 同上 144小時 未故障 未故障 同上 同上 168小時 未故障 未故障 同上 同上 吸水後之 尋常狀態 未故陣 未故障 未故障 未故障 附熱性② 24小時 未故障 未故障 部分剝離 部分剝離 48小時 未故障 未故障 大為剝雄 大為剝離 72小時 未故陣 未故障 斷線 斷線 96小時 未故陣 未故障 斷線 斷媒 120小時 未故障 未故障 斷線 斷線 144小時 未故障 未故障 - - 168小時 未故障 部分剝離 - — Tg (t：) 234 235 234 145 壓力鍋試 尋常狀態 6X 1014 7 X 1014 4κ ίο 14 6 X 1014 驗後之絕 200小時 6x 1012 4X 1012 5 X 1〇 12 2Χ 108 緣電阻 500小時 4x 1011 2x 1011 1 X 1011 <108 (Ω ) 700小時 4x 1010 4X 1010 3 X 1〇 — 1000小時 2 X 1010 1 X 1010 8X ι〇9 一 遷移電阻 尋常狀態 5X 1〇13 6X 1012 6 X ίο is 1 6Χ 1012 (Ω ) 200小時 5x 1011 5X 1011 5x i〇u 7Χ 108 500小時 4X 1011 3X 1011 2 X ι〇ιι <108 7 00小時 1 X 1011 2 X 1011 1 X 1011 一 1000小時 9 X 1010 8 X 1010 7 X ι〇9 一 散熱率 (V ) 35 .36 57 ύ CEx.=比較例 Ord.state =尋常狀態 Tg =坡瑀化溫度 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） 34 經$中央揉準局貝工消費合作社印製 401723 Δ7 Α7 Β7 五、發明説明（32) s例5 清漆Α係以實例1之相同方式製備。 厚lOOwm之玻璃锄物浸潰Μ清漆A，清漆A於150°C乾燥 獲得厚105 w ίο之半固化預浸物（預浸物B3)，具有膠凝時間 於170Ό為6秒及樹脂流動性於170Ό於20kgf/Cm2歷5分鐘 為110w m。又也製備厚l〇9w m預浸物（預浸物C2)具有膠凝 時間11 4秒及樹脂流動性1 3 m m。 它方面，製備厚250am之銅Η作為内層金臑Η *及藉蝕 刻法形成13x13mm見方尺寸及高lOOwm之凸部，而位於50 X 50mm見方尺寸之封裝體中央。 然後液體抗蝕劑施用於前述金屬片全表面上而形成厚20 wm之塗層。塗層經乾燥去除溶劑。有一孔用於凸部之負 膜置於兩側上。開鏠部Μ外部分暴露於紫外光，開縫部之 抗蝕劑膜係MU碳酸納水溶液去除。然後藉蝕刻於兩邊製 作寛0.6ιβιβ及長lOmra之開缝。 金屬片全表面經處理形成黑色氧化銅，不含BT樹脂溶劑 之填補孔用樹脂（商品名：BT S730，三菱瓦斯化學公司供 給）填補於前述開鏠部，及於1 2 0 1C熱固化40分鐘及於1 6 0 1C熱固化6 0分鐘。 前述預浸物Β有一藉銑刀製作之孔*其大於凸部達50 wn ，預浸物B覆蓋於上表面上。預浸物C覆蓋於下表面上，厚 18ϋΠ1之電解網萡置於二者上，所得集合於200t：於20 kgf/cm2於30minHs或Μ下之真空歷2小時層叠成形使其整 合為一體。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -35 - (請先閲讀背面之注意事項再填寫本頁) -装- 訂 線 401723 A7 B7 五、發明説明（33) 於開鏠部，直徑〇.25mra之通孔鑽孔於其中心，因而不接 觸開縫部金靥。散熱用通孔鑽孔於四角而直接接觸内層金 屬片。除去污潰處理後，藉無電鍍敷及電鍍鍍铜形成厚17 wm之嗣鍍層於孔内。液體抗蝕刻劑施用於其正反面及乾 燥，然後正膜置於其上，接著曝光及顯影而形成正及反電 路。同時凸部之銅箔藉蝕刻一起去除而獲得印刷電路板。 然後以鎳及金進行鍍敷而完成印刷電路板。 具有13X 13mm見方尺寸之半導體晶片Μ銀糊黏合且固定 至其上表面凸部，然後進行接線，半導體晶片、接媒及黏 合墊部Μ含矽氧環氧樹脂密封化合物藉轉印壓塑包囊獲得 半導體封裝體。所得半導體封裝體經評估而表3顯示其结 果。 實例6 使用預浸物其係同實例1之預浸物Cl。18u m電解銅箔置 於一面上，離形膜置於另一面上，所得集合於200 °C於20 kgf/cm 2眉叠成形歷2小時獲得單邊鍍飼層合物。 經^:中央標準局貝工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 含 Cu: 99.8 6wt%，Fe ： O.llwtS；及 P: 0.03wtU 合金片 作為内層，其係M實例5之相同方式處理形成具有l〇x lOmin見方尺寸及高度l〇〇w m之二凸部。 又開鏠係K實例5之相同方式製作。然後開鏠内以樹脂 填補，預浸物B3有一銑刀製孔用於凸部，預浸物B3置於上 表面上，預浸物C2置於下表面，如前獲得之單邊鍍銅層合 片置於兩邊，所得集合Μ相同方式層叠成形。 於開缝部，於中央鑽孔直徑0.20mm之通孔而不接觸開縫 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） A7 B7 五、發明説明（34) 部金鼷。脫去污潰處理後，藉無電鍍敷及電鍍鍍銅形成厚 之銅鍍層於孔内。於層叠片之凸部、接線墊部及珠 墊部K外部分形成鍍敷阻罩，Μ鎳及金進行鍍敷，於中央 銅片凸部之層叠片部之基材藉銑刀切割去除因而完成印刷 電路板。然後Μ類似方式黏合半導體晶片，然後進行接線 接著Μ樹脂包囊獲得半導體封裝體。評估所得半導體封裝 體，表3顯示其結果。 ------------装------訂------淥 (請先閲讀背面之注意事項再填寫本頁) 經碑部中央標準局貝工消费合作社印裝 37 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）Page I Binding Binding This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 29 401723 A7 B7 V. Description of the invention (27) g Example 3 The varnish was prepared in the same manner as in Example 1. 100wm thick glass fabric impregnated with the aforementioned varnish A and dried at 150 ° C to prepare a semi-cured low-flow prepreg (prepreg B2) with a thickness of 105win, with a gel time of 7 seconds at 170 ° C and resin flowability At 1701C, it is 110 «m at 20ksf / cm2 for 5 minutes. A highly fluid prepreg (prepreg C2) with a thickness of 109 «in was also prepared with a gel time of 11 4 seconds and a resin flowability of 13 mm. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative (please read the precautions on the back, and then fill out this page). Provide a feed of 250wm thick. It will form an inner layer. 20 «Π coating, the coating is dried to remove the solvent. Then leave a resist on the surface * and leave 8 X? Min square-sized bumps at the center of the 50 × 50mni square-sized gold wafer, and the resist on the reverse side is left on the entire surface * only on the copper sheet The surface is etched to form a 8 × 8m · square-shaped height 100mm raised portion for mounting a semiconductor wafer. After removing the resist, a liquid resist * was applied again to form a 20um thick coating, and the coating was dried. A negative film with a hole for the metal convex portion is covered on the surface, and a non-porous negative film is covered on the reverse surface. After the ultraviolet light is irradiated, the resist film of the pore portion of the gap is removed by a M 1¾ sodium carbonate aqueous solution. Then, a clearance hole with a diameter of 0.6.mu was made by etching both sides. Then, the entire surface of the gold tincture is treated to form black copper oxide. The prepreg B has a hole larger than a convex portion by 12 / im, and the prepreg B covers the upper surface. The prepreg C was covered on its lower surface, and an electrolytic copper tin with a thickness of 18wm was placed on the two, and the obtained set was stacked at 200 ° C at 20kgf / cm2 at 30mniHg in vacuum or M for 2 hours to integrate them into one body. In the clearance hole section, a through hole with a diameter of 0.25mm is made in the center of the laser beam. Because this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -30- 401723 B7 Shellfish consumption of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the cooperative V. Description of the invention (28) 1 1 Without contacting the inner gold plate of the clearance hole ο Drill holes at four corners with diameters of 1 1 each of 0. 25 am Four heat dissipation through holes 9 Therefore directly contact for heat dissipation 1 piece of gold 〇 after decontamination treatment 9 After copper plating by electroless plating and electroplating, please shape 1 1 into a copper forging layer with a thickness of 17 U m. Read the back of the hole c 1 [1 | The liquid resist is applied to the front and back surfaces and the dry film is placed on the front film 1 Note r on top 9 Next exposure Λ Imaging and formation of positive and negative circuits at the same time on the convex part 1 Item 1 Copper etched by etching 〇Plating gallbladder It is formed on the convex part, the adhesive pad part and the re {{This page 1 is equipped with 1 bead pad part M and other parts M. Nickel and gold are plated to complete the printed circuit board. 13 X 13 m is a square-sized semiconductor wafer K silver Paste bonding and fixing 1 1 to the convex part 9 and then wiring the assembly. By transfer molding M based on epoxy 1 I resin sealing compound encapsulation to obtain the semiconductor package and attached solder beads 0 half 1 custom conductor package connected to the mother The semi-conductive musk body plastic package obtained on the board was evaluated 1 9 Table 2 shows the results > 1 1 Example 4 1 1 The prepreg sheet using the same prepreg C 1 as in Example 1 > 1 8/1 Π ) Electrolytic copper foil is placed on the surface of 1 wire. 9 The release film is placed on the other side. The assembly is collected at 200 PP at 1 I 20kg f / C ring 2 and vacuum laminated at 30 mm Hg or M to obtain single-sided copper plating. ί Laminate 〇Alloy flakes contain C u 99 .8 6 w Fe 〇. 11 «« and P 1 1 0. 03 wU was prepared and processed in the same manner as in Example 3 to form a convex portion having an area 1 1 5 < 5 m in square size and a height of 0 0 0 ju m. 0 Μ Make clearance 1 | hole 0 and then have a hole for the aforementioned prepreg B for the gold ridge projection on the above table 1 | Surface 9 The aforementioned prepreg c is placed on the lower surface, the aforementioned unilateral plating feed The laminate is placed 1 1 1 on its outer side 9 and the obtained set is formed by lamination 9 and then a printed circuit board is prepared. 0 1 1 A through hole with a diameter of 0.2 C m σ is drilled in the center of the clearance hole so that it does not contact the clearance 1 1 Paper size applies Chinese National Standard (CNS) A4 (210X297mm) _ 3 1-Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (⑵) The metal piece of the hole. The countersink hole passes through the heat sink and contacts the gold diaphragm. After the decontamination treatment, copper plating was performed by electroless plating and electroplating to form a copper plating layer with a thickness of 18 wm in the holes. A liquid resist is applied to the front and back sides and the solvent is dried to remove the solvent, and then a positive film is applied thereon followed by exposure and development to form the front and back circuits. The plating mask is formed on the convex portion, the bonding pad portion, and the bead pad portion M of the semiconductor wafer, and M nickel and gold are plated. The substrate above the gold bumps was cut and removed by an M-mill to complete the printed circuit board. A semiconductor crystalline silver paste was adhered thereon, and then wiring was performed, and the resulting aggregate M resin capsule was attached, and solder beads were attached to obtain a semiconductor package. The semiconductor package system was connected to the motherboard in the same manner as in Example 3. The obtained semiconductor plastic package was evaluated and Table 2 shows the results. Comparative Example 3 500 parts of epoxy resin (trade name: Epikote 1045), 500 parts of epoxy resin (trade name ESCN22F), 300 parts of dicyanodiamine group and 2 parts of 2-ethylimidazole were dissolved in isobutanone and two A mixed solvent of methylformamide, the resulting solution is used to impregnate glass relays with a thickness of 100 wm, and prepared at 170 ° C with a gel time of 10 seconds and a resin flow of 98 μm. Prepreg (prepreg D), and highly fluid prepreg (prepreg E) with a gel time of 150 seconds and a resin flow of 18mm. Two pieces of prepreg E * were used to form a unilateral wrought copper laminate by vacuum lamination at 1701C at 20 kgf / cm2 and 30 mmHs for 2 hours. Subsequently, a printed circuit board was manufactured in the same manner as in Comparative Example 1. Mounting the semiconductor wafer part M boring 榇 boring * Thick 200 / im copper sheet is bonded to the reverse side in a similar manner with a prepreg which is punched through the aforementioned non-flowable prepreg D to the attachment under heat and pressure Heat sink made of printed circuit board. Slightly quoted This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 32 ------ L ---- installation ------ order ------ line (please read first Note on the back page) A7 B7 V. Description of the invention (30) From this time, Banzaki changed. The semiconductor wafer is directly bonded to the M-silver paste, and then connected to the M-liquid epoxy resin. The beads are attached to the opposite side of the metal attachment surface. The obtained semiconductor plastic package M is connected to the motherboard in a similar manner. The semiconductor plastic package was evaluated. Table 2 shows the results. Please read the precautions of A before f (This page is printed by the Central Standards Bureau of the Ministry of Economic Affairs of the Central Bureau of Standards, printed by the Paperwork Consumer Cooperative, and the paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 33 401723 A7 B7 V. Invention Explanation (31) Economic_Printed by the Consumer Standards Cooperative of the Central Bureau of Standards 2 Example 3 Example 4 Comparative Example 1-2 Comparative Example 3 The normal state after absorption of water is not faulty, no fault, no fault, heat resistance ① No fault for 24 hours No failure no failure no failure 48 hours no failure no failure no failure no failure 72 hours no failure no failure no failure no failure 96 hours no failure no failure no failure part stripping 120 hours no failure no failure array part of the same as above 144 Hours without failure, no failure, the same as above, 168 hours without failure, no failure, the same as above, the normal state after absorbing water, no failure, no failure, no failure, no failure, and heating characteristics. The stripping male is stripped for 72 hours without failure and without failure. 96 hours of failure, no failure, disconnection, disconnection of media, 120 hours of failure, no failure, disconnection, disconnection, 144 hours of failure, no failure, failure--168 hours of failure, partial failure--Tg (t :) 234 235 234 145 6X 1014 7 X 1014 4κ ίο 14 6 X 1014 Absolute 200 hours after the test 6x 1012 4X 1012 5 X 1〇12 2X 108 Edge resistance 500 hours 4x 1011 2x 1011 1 X 1011 < 108 (Ω) 700 hours 4x 1010 4X 1010 3 X 1〇—1000 hours 2 X 1010 1 X 1010 8X ι〇9 a migration resistance ordinary state 5X 1〇13 6X 1012 6 X ίο is 1 6X 1012 (Ω) 200 hours 5x 1011 5X 1011 5x i〇u 7X 108 500 hours 4X 1011 3X 1011 2 X ιιι < 108 7 00 hours 1 X 1011 2 X 1011 1 X 1011-1000 hours 9 X 1010 8 X 1010 7 X ι09-heat dissipation rate (V) 35.36 57 ύ CEx. = Comparative example Ord.state = ordinary state Tg = slope temperature (please read the notes on the back before filling out this page) This paper size applies Chinese National Standard (CNS) A4 (210 X297 mm) 34 Printed by the Central Government Bureau of Standardization, Shellfish Consumer Cooperative 401723 7 Α7 Β7 V. invention is described in (32) s Example 5 Α-based varnish prepared in the same manner of Example 1. 100mm thick glass dipped into varnish A, varnish A was dried at 150 ° C to obtain a semi-cured prepreg (prepreg B3) with a thickness of 105 w, with a gel time of 170 Ό for 6 seconds and resin flowability It is 110w m at 170 / at 20kgf / Cm2 for 5 minutes. A prepreg (prepreg C2) with a thickness of 109 mm was also prepared, which had a gel time of 114 seconds and a resin flowability of 13 mm. On the other hand, a copper alloy with a thickness of 250am was prepared as an inner layer of gold alloy *, and a 13x13mm square size and a height of 100wm protrusions were formed by etching, and it was located in the center of a package of 50x50mm square size. A liquid resist was then applied to the entire surface of the aforementioned metal sheet to form a 20 wm thick coating. The coating was dried to remove the solvent. There is a hole for the convex film on both sides. The outer part of the opening M is exposed to ultraviolet light, and the resist film of the opening part is a sodium carbonate aqueous solution of MU. Then, a slit of 寛 0.6ιβιβ and a length of 10mra was made on both sides by etching. The entire surface of the metal sheet is treated to form black copper oxide, and a resin for filling holes without a BT resin solvent (trade name: BT S730, supplied by Mitsubishi Gas Chemical Co., Ltd.) is filled in the aforesaid opening section, and heat cured at 1 2 0 1C 40 Minutes and heat curing at 16 0 1C for 60 minutes. The aforementioned prepreg B has a hole made by a milling cutter * which is larger than the convex portion by 50 wn, and the prepreg B covers the upper surface. The prepreg C is covered on the lower surface, and an electrolytic mesh with a thickness of 18ϋΠ1 is placed on the two, and the obtained set is collected at 200t: laminated at 20 kgf / cm2 at 30minHs or M for 2 hours to form a whole. This paper size applies to Chinese National Standard (CNS) A4 specification (210 × 297 mm) -35-(Please read the notes on the back before filling this page)-Binding-Thread 401723 A7 B7 V. Description of the invention (33) Yu Kai In the crotch part, a through-hole with a diameter of 0.25mra is drilled in the center, so it does not touch the slotted part. The through holes for heat dissipation are drilled at the four corners to directly contact the inner metal sheet. After the fouling treatment was removed, a 17 Wm thick hafnium plating layer was formed in the hole by electroless plating and copper plating. The liquid anti-etching agent is applied to the front and back sides and dried, and then the front film is placed thereon, followed by exposure and development to form the front and back circuits. At the same time, the copper foil of the convex portion is removed by etching to obtain a printed circuit board. Then, nickel and gold are plated to complete the printed circuit board. A semiconductor wafer with a size of 13X 13mm square silver paste is adhered and fixed to the upper surface convex portion, and then the wiring is performed. The semiconductor wafer, the medium and the adhesive pad portion M contain a silicone epoxy sealing compound by transfer compression molding. A semiconductor package is obtained. The obtained semiconductor package was evaluated and Table 3 shows the results. Example 6 A prepreg was used which was the same as the prepreg Cl of Example 1. The 18um electrolytic copper foil was placed on one side, and the release film was placed on the other side. The obtained aggregate was formed at 200 ° C at 20 kgf / cm 2 for 2 hours to obtain a unilateral plating feed laminate. ^: Printed by the Central Standards Bureau Shellfisher Consumer Cooperative (please read the notes on the back before filling this page) Contains Cu: 99.8 6wt%, Fe: O.llwtS; and P: 0.03wtU alloy sheet as the inner layer, its system In the same manner as in Example 5, two convex portions having a square size of 10 × 10 min and a height of 100 wm were formed. It was made in the same manner as in Example 5 of Kelvin. Then the inside of the split is filled with resin. The prepreg B3 has a milling hole for the convex part. The prepreg B3 is placed on the upper surface and the prepreg C2 is placed on the lower surface. The single-sided copper plating layer obtained previously The combined sheet is placed on both sides, and the obtained set M is laminated and formed in the same manner. In the slit section, drill a through hole with a diameter of 0.20mm in the center without touching the slit. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) A7 B7 V. Description of the invention (34) Department of gold. After the decontamination treatment, a thick copper plating layer is formed in the hole by electroless plating and copper plating. A plating mask is formed on the convex part of the laminated sheet, the wiring pad part and the outer part of the bead pad part K, and M nickel and gold are plated. Finish the printed circuit board. M then adheres the semiconductor wafer in a similar manner, and then performs wiring. Then M resin is encapsulated to obtain a semiconductor package. The obtained semiconductor packages were evaluated, and Table 3 shows the results. ------------ Install ------ Order ------ 渌 (Please read the notes on the back before filling this page) Printing 37 This paper size applies to China National Standard (CNS) A4 specification (210 × 297 mm)

AA

7 B 五、發明説明（35) 經濟部中央標準局負工消費合作社印製 表 3 實例5 實例6 吸水後之 耐熱性① 尋常狀態 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 1 4 4小時 未故障 · 未故障 168小時 未故障 未故障 吸水後之 耐熱性② 尋常狀態 未故障 未故障 24小時 未故障 未故陣 48小時 未故障 未故障 72小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 144小時 未故障 未故障 168小時 未故障 部分剝離 Tg (°C ) 234 - 壓力鍋試 尋常狀態 6 X 10 14 - 驗後之絕 緣電阻 (2 ) 200小時 5 X 10 12 500小時 4X 1011 700小時 6 X 1010 1000小時 3 X 10 10 遷移電阻 (Ω ) 尋常狀態 4 X 10 13 - 200小時 5 X 1011 500小時 5 X 1011 700小時 8 X 10 10 1000小時 3 X 10 10 散熱率 (t：) 38 39 Ts =玻璃化溫度 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 38 經濟部中央標準局員工消費合作社印製 401733 A7 B7 五、發明説明（3β) 實例7 清漆Α係以實例1之相同方式製備。清漆Α用於製備預浸 物（預浸物B)，其係同實例1之預浸物B。又也製備厚109wm 之預浸物C，其具有膠凝時間114秒及再流流動性13 ram。 厚250；um銅Η提供用於内層金屬片，形成具13x13mm見 方尺寸及高100w m之凸部存在於5〇x 50mm見方尺寸之封裝 體中央。 液體抗蝕劑施用於前述金靨片全表面上而形成厚20 «m 之塗層，直徑0.6miB之餘隙孔係Μ實例1之相同方式製作。 金鼷Η全表面經處理形成黑色氧化銅，預浸物Β，預浸 物C及電解飼箔Μ實例1之相同方式層叠成形及整合一體。 然後通孔係Μ實例1之相同方式製作，及厚17m hi銅鍍層 形成於孔内。 液體抗蝕劑施用於其正反面及乾燥，正膜置於其上，接 著曝光及顯像而形成ί ft反電路。同時凸部上之鋦萡藉蝕刻 一起去除而獲得印刷電路板。然後Μ銑刀製作一孔，其係 比表面暴露金靥部之凸部金靥大100 w 且用於固定半導體 晶片，而製備預浸物Β 1。預浸物Β 1置於前述印刷電路板上 ，放置厚18wi«電解銅箔，所得集合於200 °C於20kgf/cm2 請 先 閱 讀 背 之 注 意 事 項 再 本 頁 裝 訂 線 係 孔例 ’ 實 除 Μ 去 ， 刻後 鈾理 蕗處 箔潰 銅污 之去 分脫 部於 。 孔 ， 形通作 成盲製 «作射 層製雷 空待體 真氣 碳 化 氧 式 方 同 相 之 分 β, 咅 外 Μ 墊 珠 及 。 墊板 合路 黏電 、 刷 部印 凸成 於完 成而 形敷 罩鍍 阻行 敷進 鍍金 ο 及 銅鎳 鍍Μ 行及 進， 本紙張尺度適用中國國家梂準（CNS ) Α4規格（210Χ297公釐） 39 401723 A7 B7 五、發明説明（37) 具有13X 13mm見方尺寸之半導體晶片K銀糊黏合及固定 至前述凸部，進行接線*半導體晶片Μ含矽氧環氧密封液 體樹脂包囊獲得半導體封裝體。評估所得半導體封裝體， 表4顯示其结果。 實例8 使用預浸物C 1 *單邊鍍銅層合物係Μ實例1之相同方式 製備。 厚 25〇wm 且含 Cu: 9 9 . 8 6 w t ^ * F e ： 0. llwt%S. P ·* 0 . 0 3 w t i；之合金其將構成内層，以實例1之相同方式加工形成二凸 部於表面上，大小l〇x lOmm見方及高100w m。 又製作直徑0.6mm之餘隙孔，含有使用銑刀對凸部製作 之孔之預浸物B1M類似方式置於正面上，預浸物C1係置於 反面，兩片如前獲得之單逢鍍銅層合物置於兩邊，所得集 合於相同條件下層叠成形。 (請先閱讀背面之注意事項再填寫本頁) 觸鋦 接鍍 不鍍 而電 因及 ， 敷 孔鍍 鑽電 心無 中藉 於’ 孔後 通理 之 處 mm漬 20污 ο 去 徑脫 直。 部屬 孔金 隙部 餘孔 於隙 餘 層 鍍 銅 之7 B V. Description of the invention (35) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, Table 3 Example 5 Example 6 Heat resistance after water absorption 1 4 4 hours without failure, 168 hours without failure, 168 hours without failure, heat resistance after absorbing water ② normal condition, no failure, no failure, 24 hours, no failure, 48 hours without failure, no failure, 72 hours without failure, no failure, 96 hours without failure 120 hours without failure, 144 hours without failure, 168 hours without failure, 168 hours without failure, partial peeling Tg (° C) 234-pressure cooker test normal state 6 X 10 14-insulation resistance after test (2) 200 hours 5 X 10 12 500 hours 4X 1011 700 hours 6 X 1010 1000 hours 3 X 10 10 Migration resistance (Ω) Normal state 4 X 10 13-200 hours 5 X 1011 500 hours 5 X 1011 700 hours 8 X 10 10 1000 hours 3 X 10 10 Heat dissipation Rate (t :) 38 39 Ts = glass transition temperature The paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 38 Printed by the Employees' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 401733 A7 B7 V. Description of the Invention (3β) Example 7 Varnish A was prepared in the same manner as in Example 1. Varnish A was used to prepare a prepreg (prepreg B), which was the same as prepreg B of Example 1. A 109 wm thick prepreg C was also prepared, which had a gel time of 114 seconds and a reflow flow of 13 ram. The thickness of 250um copper mat is provided for the inner metal sheet to form a convex part with a size of 13x13mm square and a height of 100w m in the center of the package with a size of 50x50mm square. A liquid resist was applied on the entire surface of the aforementioned gold foil to form a coating layer having a thickness of 20 mm, and a clearance hole having a diameter of 0.6 miB was produced in the same manner as in Example 1. The entire surface of the gold tincture was treated to form black copper oxide, prepreg B, prepreg C, and electrolytic feed foil M. Example 1 was laminated and integrated in the same manner. Then, the through hole was made in the same manner as in Example 1 and a copper plating layer with a thickness of 17 m hi was formed in the hole. The liquid resist is applied to its front and back sides and dried, and a front film is placed thereon, followed by exposure and development to form a ft reverse circuit. At the same time, the bumps on the protrusions are removed together by etching to obtain a printed circuit board. Then, the M milling cutter makes a hole, which is 100 w larger than the convex portion of the exposed portion of the surface and is used to fix the semiconductor wafer to prepare a prepreg B1. Prepreg B 1 was placed on the aforementioned printed circuit board, and placed 18wi «electrolytic copper foil, and the obtained set was at 200 ° C at 20kgf / cm2. Please read the precautions on the back first and then the example of the gutter on this page. After the engraving, the copper fouling at the uranium plutonium was removed to remove the copper. The hole is shaped as a blind system «made as a stratospheric mine to make an empty body air carbon oxide type square in phase β, 咅 and Μ cushion beads. The pads are glued together, and the brushes are printed and finished. The cover is covered with gold plating and copper and nickel plating. The size of this paper is applicable to China National Standard (CNS) A4 (210 × 297). 39) 401723 A7 B7 V. Description of the invention (37) A semiconductor wafer with a size of 13X 13mm K silver paste is adhered and fixed to the aforementioned convex part, and the connection is made * The semiconductor wafer M contains a silicon epoxy epoxy sealed liquid resin capsule to obtain a semiconductor Package. The obtained semiconductor package was evaluated, and Table 4 shows the results. Example 8 A prepreg C 1 * single-sided copper-plated laminate was prepared in the same manner as in Example 1. Thickness: 25wm and Cu: 9 9. 8 6 wt ^ * F e: 0.11 wt% S. P · * 0. 0 3 wti; the alloy will form the inner layer, and will be processed into two in the same manner as in Example 1. The convex part is on the surface, the size is 10x10mm square and the height is 100w m. A clearance hole with a diameter of 0.6mm was also made. A prepreg B1M containing a hole made by a milling cutter on the convex part was placed on the front side in a similar manner, and the prepreg C1 was placed on the reverse side. The copper laminate is placed on both sides, and the resulting assembly is laminated and formed under the same conditions. (Please read the precautions on the back before filling in this page) The electroplating due to the contact plating is not plated, and the drill-coated drill core has not borrowed the 'millimeter stain 20 stains after the hole. . Subordinate hole gold

經濟部中央樣準局貝工消費合作社印$L 膜 正 置 安 後 然 劑 溶 除 。 去路 煉電 乾反 及W 面成 "Μ形 17其而 厚於像 成用顯 形施及 內劑光 孔蝕曝 於抗著 而 接 部以 孔部 通墊 作珠 例製及 實式部 Μ方墊 後似合 然類黏 以 、 形 成 叠 層 行 進 ΊΧ Β 物 浸 預 用 使 式 方 同 相 之The Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed the $ L film, and placed the solvent in place. Go to the road to dry electricity and W surface into "M shape 17", but thicker than the image with visible application and internal agent photoporosity exposure to the resistance, but the connection part with the hole through the pad as a bead and solid part After the square pad, it seems that it is similar to sticking together to form a stack.

部央 片中 «於 層 ， 之金 部鍍 凸及 於鎳 成鍍 形行 罩進 阻 ’ 敷，分 鍍部 LT 板包 路脂 電樹 刷 Μ 印及 成線 完接 而著 除接 去 ’ 刀片 銑晶 Μ 體 材導 基半 的合 部黏 片式 合方 層 似 之類 部以 凸後 片然 銅。 40 本紙張尺度適用中國國家揉準（CNS ) A4规格（210X297公釐） A7 B7 五、發明説明（38) 囊獲得半専體封裝體。所得半導體封裝體經評估及表4顯 示其结果。 請 先 閲讀 背 之 注In the central film «Yu layer, the gold part is plated and convex and nickel is plated into the line cover for resistance, and the LT plate is covered with grease, and the electric tree brush M is printed and the wires are removed and removed. ' The blade milling crystal M body guide base half of the joint part of the stick-like compound layer like the part to convex after the copper. 40 This paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) A7 B7 V. Description of the invention (38) The capsule obtained a semi-carcass package. The obtained semiconductor package was evaluated and the results are shown in Table 4. Please read the back note first

I 旁 訂 線- 經濟部中央標準局員工消費合作社印褽 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨Ο X 2们公釐） 41 401783 五、發明説明（39) A7 B7 表 經濟部中央標準局貝工消费合作社印策 實例7 實例8 吸水後之 耐熱性① 尋常狀態 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 14 4小時 未故障 . 未故障 168小時 未故障 未故障 吸水後之 耐熱性② 尋常狀態 未故障 未故障 24小時 未故障 未故障 48小時 未故障 未故障 72小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 144小時 未故障 郐力条1鳆 168小時 未故障 部分剝離 Tg (°C ) 234 - 壓力鍋試 驗後之絕 緣電胆 (Ω ) 尋常狀態 4 X 10 14 - 200小時 6 X 10 12 500小時 6 X 1011 700小時 5 X 1010 1000小時 2 X 1010 遷移電阻 (Ω ) 尋常狀態 5 X 10 13 - 200小時 6x 1011 500小時 5 X 1011 7 00小時 9X 10 10 1000小時 6 X 10 10 散熱率 (V ) 37 38 Tg =玻璃化溫度 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 42 經济部中央樣準局負工消費合作社印製 A7 B7 五、發明説明（4〇) 實例9 清漆A係以實例1之相同方式製作。清漆A用於浸潰厚100 w in玻璃織物及於150°C乾燥獲得厚105w m之半固化低流動 性預浸物（預浸物B 2 )，具有膠凝時間於1 7 0 "C為7秒及樹脂 流動性於1701C於20kgf/cm2歷5分鐘為110«b。又該浸漬 妥之玻璃織物於1451C乾燥獲得厚107« m之高流動性預浸 物（預浸物C 1 )，具有膠凝時間於1 7 0 °C為1 2 0秒及樹脂流動 性為 1 31) in。 製備同實例1之金屬片，藉蝕刻法形成凸部，尺寸為13 X 13mm見方尺寸及高100« m因而位於5〇X 50mra見方尺寸之 封裝體中央。然後以實例1之相同方式製作直徑0.6mm之餘 隙孔。金屬片全表面經處理而形成黑色氧化铜，前述具有 孔大於凸部達50a m之預浸物B2像於對應於凸部位置藉衝 穿製成，預浸物B覆蓋於其上表面。預浸物C1覆蓋於下表 面，厚12μιπ之電解銅箔置於兩面，所得集合於20〇υ於 20kgf/cm2於30mmHg或以下之真空歷2小時層叠成形而整 合一體，藉此獲得雙邊鍍銅層合物。於餘隙孔部*於中央 K雷射製作直徑0.25mm之通孔因而不接觸餘隙孔部之金屬 片。於四角Μ雷射製作直徑0.25mm之四個散熱通孔而直接 接觸金羼片。脫去污漬處理後，藉無電鍍敷及電鍍鍍飼形 成厚18// m之铜鍵層於孔内。 液體抗蝕劑施用於其正面及背面及乾燥，然後正膜置於 其上，接著曝光、顯像及形成iEli反電路。同時抗蝕膜及凸 部上之銅箔藉蝕刻一起去除。鍍敷阻罩形成於凸部、黏合 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） _ 43 - ----.--U----β------IT------d (請先閲讀背面之注意事項再填寫本頁) 經$中央標準局貝工消費合作社印製 A7 B7 五、發明説明U l) 墊部及珠墊部Μ外之其它部分，以鎳及金進行鍍敷而完成 印刷電路板。 13Χ 13mm見方尺寸的半導體晶片以銀糊黏合及固定至凸 部，然後進行接嬢，所得集合藉轉印模塑Μ含矽氧環氧樹 脂密封化合物包囊獲得半等體封裝體，及附接焊珠。半導 體封裝體藉加熱熔化媒珠而連接至環氧樹脂製成的母板印 刷電路板。所得半導體塑膠封裝體經評估，表5顯示其结 果。 實例10 提供如實例1之預浸物C1，厚12/iin之電解銅箔置於預浸 物之一面上，離形膜置於另一面上，所得集合於2 00 Ό於 20kgf/cni2層叠成形2小時而製備單邊鍍銅層合物。厚200 « m待構成内層之軋製銅片係Μ實例1之相同方式加工而形 成具簧例1相同大小及高度之凸部。又製作直徑0.6mm之餘 隙孔，同實例1之清漆A藉網印施用於正反面上而無樹脂黏 著於金靨凸部，形成的塗層經乾燥。前述施用及乾燥交替 重複三次形成厚105 w m之樹脂層。正面樹脂層調整為低流 動態，具有膠凝時間於17010為5至10秒，反面之樹脂層調 整為高流動態及具有膠凝時間60至7 0秒。如上所得單邊鍍 銅層合片置於兩側上，及所得集合於相同條件下層*成形 而獲得雙邊鍍銅層合物。於餘隙孔部*於中央鑽孔直徑 0.2 0mm之通孔而不接觸餘隙孔部之金屬片。通孔以類似方 式於四角鑕孔而直接接觸金靥片作為散熱部。脫去污漬處 理後，藉無電鍍敷及電鍍進行鍍銅而於孔内形成厚17Um 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) -44 - ------*----^------1T------ii (請先閲讀背面之注意事項再本頁) 401723 A7 B7 五、發明説明U2) 之銅鍍層。液體抗蝕劑施用於正反面上及乾燥去除溶劑， 然後正膜置於其上接著曝光及顯像形成正及反電路。鍍敷 阻罩形成於層合物之凸部、黏合墊及珠墊以外部分，Μ鎳 及金進行鍍敷，然後Μ銑刀切割去除於中央銅片凸部之層 合部基材因而完成印刷電路板。發現流入銑刀切割去除之 金靨凸部頂部的樹脂為2 0 y m或Κ下。又發現餘隙孔之剖 面不含空隙。 然後Μ類似方式黏合半導體接著以樹脂包囊而形成半導 體塑膠封裝體。半導體封裝體Μ類似方式連接至環氧樹脂 母板印刷電路板。半導體塑膠封裝體經評估，表5顯示其 結果。 比較例4 經濟部中央標準局貝工消费合作社印製 製備如比較例3之相同預浸物D及Ε。使用兩片預浸物Ε， 雙邊鍍銅層合物係經由於170°C於20kgf/cin2於30nimHg真 空下歷2小時層叠成形製備。然後印刷電路板係Μ比較例1 之相同方式製備，待安裝半導體晶片部分經鏜孔，厚20 0 wm之铜片Μ預浸物黏合至反面，預浸物係於加熱加壓下 衝穿前述預浸物D製備，而獲得附接敗熱片之印刷電路板 。板引起崎變至某種程度。半導體晶Η Κ銀糊直接鈷合至 前述散熱片*接著藉接線連接及Μ液體環氧樹脂包囊。焊 珠附接於金屬附接面之反面。.所得半導體封裝體Μ類似方 式連接至母板。評估半導體塑膠封裝體，表5顯示其結果。 45 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS〉Α4規格（210X 297公釐） B7 五、發明説明（43) 經濟部中央橾準局貝工消費合作社印製 表 5 實例9 實例10 比較例4 ~ 吸水後之 耐熱性① 尋常狀態 未故障 未故障 未故障 24小時 未故障 未故障 未故障 48小時 未故障 未故障 未故障 72小時 未故障 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 1¾上 144小時 未故障 未故障 同上 168小時 未故障 未故障 同上 吸水後之 附熱性② 尋常狀態 未故障 未故陣 未故障 24小時 未故障 未故障 部分剝離 48小時 未故障 未故障 大為剝離 72小時 未故障 未故障 斷線 96小時 未故障 未故障 斷線 120小時 未故障 未故障 斷線 144小時 未故障 未故障 - 168小時 未故障 部分剝離 - Tg (t：) 234 235 145 壓力鍋試 驗後之絕 緣電阻 (Ω ) 尋常狀態 5 X 1014 6 X 1014 6 X 1014 200小時 5X 1012 5 X 1012 2x 108 500小時 4X 1011 7X 1011 <108 700小時 6 X 1010 IX 1010 - 1000小時 1 X 1010 8x 109 - 遷移電阻 (Ω ) 尋常狀態 5 X 1013 6 X 1012 6X 1012 200小時 5X 1011 5X 1011 7X 108 500小時 4X 1011 3X 1011 <108 700小時 1 X 1011 2X 1011 - 1000小時 9 X 1010 8 X 10 10 - 散熱率 (°C ) 36 .37 48 CEx.=比較例 Ord.state =尋常狀態 /Tg =玻璃化溫度 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度逍用中國國家揉準（CNS ) A4规格（210X 297公釐） 46 經濟部中央標準局員工消費合作社印製 40Π23 A? _B7 五、發明説明（4·4 ) 實例1 1 清漆A係K實例Ί之相同方式製備。清漆A用於浸潰1 0 0 w η 厚玻璃继物及於150°C乾燥獲得厚150um之半固化低流動 性預浸物（預浸物B4)，其具有膠凝時間於170t：為7秒及樹 脂流動性於170°C於20kgf/cn2歷5分鐘為110ϋ/ιπ。又該浸 漬妥之玻璃織物於145°C乾燥獲得厚170W m之高流動性預 浸物（預浸物C1)，其具有膠凝時間於170 °C為120秒及樹脂 流動性為13mm。 它方面，厚 200ίζιπ 且含 Cu:97.3wt!K，Fe.’Z.SwtiK’.F^O.l wU，Zn:0.07wt!l；及Pb:0.033；之合金提供作為内層金屬片 ，藉蝕刻法形成13Xl3nm見方尺寸及高100/im之凸部，而 其位於5〇x5〇mra見方尺寸之封裝體中央。 然後黑色氧化銅處理係Μ實例1之相同方式進行，並層 叠預浸物及電解銅箔，所得集合於實例1之相同條件下層 叠成形而整合一體，藉此獲得雙邊鍍鋦層合物。 印刷電路板係以實例1之相同方式完成，但於餘隙孔部 鑽孔一通孔。 13xl3mm見方尺寸的半導體晶片Κ銅糊黏合及固定於凸 部，然後接線及所得集合K含矽氧環氧密封化合物藉轉移 壓塑包囊*附接焊珠獲得半導體封裝體。半導體封裝體藉 熔化焊珠連接至瑁氧樹脂母板印刷電路板上。半導體塑膠 封裝體經評估而表6顳示其結果。 實例1 2 提供實例1之相同預浸物C1，厚12/im之電解铜箔置於預 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） -4 7 - HI— ! - h !! Lr m n - l_ --- - in 1:1 m m T 1^1 n------ _ n (請先閲讀背面之注意事項再填寫本頁) 4017S3 at B7 五、發明説明（45) . 浸物之一面上，離形膜置於另一面上，所得集合於20〇υ 於20kgf/Cnt2歷2小時層叠成形獲得單邊鍍銅層合物。 厚300 將構成内層之軋製銅片，Μ實例1之相同方式 加工而形成凸部，具有lOxlOmm見方尺寸及高15〇win。又 製作直徑0.6mm之餘隙孔，如實例1清漆A藉網印施用於正 反面上，而無樹脂黏著於金屬凸部，形成的塗層經乾燥而 形成樹脂層於正反面上，反面之樹脂層為高流動性樹脂層 ，具有厚度45win及膠凝時間於170C為125秒；及於正面 之樹脂層為低流動性樹脂層，具有厚度40 及膠凝時間 於170Ό為10至20秒。 經濟部中央標準局貝工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 單邊鍍鋦層合物係由如前獲得之單邊鍍飼層合物製備， 其係於對應金靥凸部位置製作比凸部大40«!«之孔製成， 該層合物置於前述金屬片之正面，如上所得單邊鍍銅層合 物置於反面，所得集合於相同條件下層叠成形而製備雙邊 鍍銅層合物。於餘隙孔部，於中央鑽孔直徑0.20mm之通孔 因而不接觸餘隙孔部之金靥片。通孔Μ類似方式於四角鑽 孔而直接接觸金屬片作為散熱部。脫去污潰處理後，藉無 電鍍敷及電鍍進行鍍銅形成厚17Wm之銅鍍層於孔内。液 體抗蝕劑施用於其正反面上及乾燥去除溶劑，然後正膜施 用於其上|接著暘光及顯像而形成正及反電路。鍍敷姐罩 形成於凸部之層叠物部，黏合墊及珠墊Μ外部分，以鎳及 金進行鍍敷而完成印刷電路板。 然後半導體晶片以類似方式黏合接著Κ樹脂包囊及附接 焊珠而形成半導體塑膠封裝體。半導體封裝體Μ類似方式 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X2S»7公釐） _ 48 - 經濟却中央標準局貝工消費合作社印製 A7 B7 五、發明説明（46 ) 連接至環氧樹脂母板印刷電路板。半導體塑膠封裝體經評 估而表6顯示其结果。 實例13 清漆A係Μ實例1之相同方式製備。低流動性預浸物（預 浸物Β1)及高流動性預浸物（預浸物C1)係Μ實例11之相同 方式製備。 它方面，含 Cu:97.54vt%，Fe:2.4wt%，卩：0.03\#七％及 Zn:0.12Wt!«之合金提供作為内層金靥片，及藉蝕刻法形成 具^見方尺寸及高22〇win之凸部，因而位於扣乂扣_見 方尺寸之封裝體中央。 然後Μ實例1之方式製作直徑0.6mm之餘隙孔。 金羼片全表面經處理而形成黑色銅氧化物，前述預浸物 B1有一孔其比凸部大110« m，係藉於對應凸部位置衡孔製 作，預浸物B1覆蓋於其上表面。預浸物C覆蓋於下表面。 又厚12wm之電解鋦箔置於兩面上，所得集合經層叠成形 製備雙邊鍍鋦層合物*電路形成於層合物一面上，略大孔 係於待安装半導體晶片部分藉衝孔製成，進行黑色氧化銅 處理，所得層合物置於表面上而形成電路之面向下。厚12 wm之銅萡置於預浸物反面上，所得集合於200 10於 20kgf/cm2於30mmHg或Μ下真空歷2小時層叠成形而整合 —體，如此獲得具有金靨凸部暴露於表面上之雙邊鍍銅層 合物。 於餘隙孔部鑽孔一通孔，直徑0.2 mm之通孔Μ類似方式 鑽孔於四角而直接接觸金雇片作為散熱部。脫去污漬處理 本紙張尺度適用中國國家梂準（CNS ) Α4規格（210Χ297公釐） -49 - (請先閱讀背面之注意事項再填寫本頁)I Sideline-Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. The paper size is applicable to the Chinese National Standard (CNS) A4 (2 丨 〇 X 2mm) 41 401783 V. Description of the invention (39) A7 B7 Table Economy Case 7: Case 8: Heat resistance after water absorption ① Normal condition without failure 96 hours without failure 120 hours without failure 14 without failure 14 hours without failure 168 hours without failure Heat resistance after absorbing water without failure ② Normal condition without failure 24 hours without failure 48 hours without failure 72 hours without failure 96 hours without failure 120 hours without failure 144 hours without failure Strip Tg (° C) for 1 to 168 hours without failure. 234-Insulated electric bulb (Ω) after pressure cooker test. Normal state 4 X 10 14-200 hours 6 X 10 12 500 hours 6 X 1011 700 hours 5 X 1010 1000 Hour 2 X 1010 Migration resistance (Ω) Normal state 5 X 10 13-200 hours 6x 1011 500 hours 5 X 1011 7 00 hours 9X 10 10 1000 hours 6 X 10 10 Heat dissipation rate (V) 37 38 Tg = glass transition temperature (please read the precautions on the back before filling this page) This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 42) 42 A7 B7 printed by the Central Procurement Bureau of the Ministry of Economic Affairs, Consumer Cooperative V. Description of the invention (40) Example 9 Varnish A was produced in the same manner as in Example 1. Varnish A is used for impregnating glass fabrics with a thickness of 100 w in and drying at 150 ° C to obtain a semi-cured, low-flow prepreg (prepreg B 2) with a thickness of 105 w m, with a gelation time of 1 7 0 " C It is 7 seconds and the resin fluidity is 170 «b at 1701C at 20kgf / cm2 for 5 minutes. The impregnated glass fabric was dried at 1451C to obtain a highly fluid prepreg (prepreg C 1) with a thickness of 107 «m, with a gelation time of 170 ° C for 120 seconds and a resin flowability of 1 31) in. A metal sheet similar to that of Example 1 was prepared, and a convex portion was formed by an etching method. The size was 13 × 13mm square and the height was 100 «m. Therefore, it was located in the center of the package with a size of 50X50mra square. Then, a clearance hole having a diameter of 0.6 mm was made in the same manner as in Example 1. The entire surface of the metal sheet is treated to form black copper oxide. The aforementioned prepreg B2 having holes larger than the protrusions by 50a m is made by punching corresponding to the position of the protrusions, and the prepreg B covers the upper surface. The prepreg C1 covers the lower surface, and the electrolytic copper foil with a thickness of 12 μm is placed on both sides, and the obtained set is stacked and integrated in a vacuum for 2 hours at 20 kgf / 20 kgf / cm2 or 30 mmHg to obtain bilateral copper plating Laminate. A through hole with a diameter of 0.25 mm is made in the clearance hole portion * at the center K laser so that it does not contact the metal piece of the clearance hole portion. Four heat dissipation through holes with a diameter of 0.25 mm were made on the four-corner M lasers to directly contact the gold foil. After removing the stain, a copper bond layer with a thickness of 18 // m was formed in the hole by electroless plating and electroplating. A liquid resist was applied to its front and back sides and dried, and then a positive film was placed on it, followed by exposure, development, and formation of an iEli anti-circuit. At the same time, the resist film and the copper foil on the bumps are removed together by etching. The plating mask is formed on the convex part and bonded to this paper. The size of the paper is applicable to China National Standard (CNS) A4 (210X297 mm) _ 43-----.-- U ---- β ------ IT ------ d (Please read the notes on the back before filling in this page) Printed by the Central Standards Bureau Shellfish Consumer Cooperative A7 B7 V. Description of the invention U l) Outside of the pad and bead pads The other parts are plated with nickel and gold to complete the printed circuit board. 13 × 13mm square-sized semiconductor wafers are bonded and fixed to the convex portion with silver paste, and then connected. The resulting assembly is encapsulated by transfer molding and containing a silicon epoxy resin sealing compound to obtain a semi-isomeric package, and attached Welding beads. The semiconductor package is connected to a mother printed circuit board made of epoxy resin by heating and melting the media beads. The obtained semiconductor plastic package was evaluated, and Table 5 shows the results. Example 10 Provide the prepreg C1 as in Example 1. An electrolytic copper foil with a thickness of 12 / iin is placed on one side of the prepreg, and a release film is placed on the other side. The resulting set is laminated at 200 Ό at 20kgf / cni2 A two-sided copper-plated laminate was prepared in 2 hours. The rolled copper sheet having a thickness of 200 «m to be the inner layer was processed in the same manner as in Example 1 to form a convex portion having the same size and height as that of Spring Example 1. A clearance hole with a diameter of 0.6 mm was also produced. The varnish A of Example 1 was applied to the front and back surfaces by screen printing without resin sticking to the convex part of the gold, and the coating formed was dried. The foregoing application and drying were repeated three times alternately to form a resin layer having a thickness of 105 wm. The resin layer on the front side is adjusted to low flow dynamics, with a gel time of 170 to 5 to 10 seconds, and the resin layer on the reverse side is adjusted to high flow dynamics and a gel time of 60 to 70 seconds. The single-sided copper-plated laminated sheet obtained as above was placed on both sides, and the obtained set was formed into a layer * under the same conditions to obtain a double-sided copper-plated laminate. In the clearance hole part *, drill a through hole with a diameter of 0.20mm in the center without touching the metal piece in the clearance hole part. The through holes are similarly formed in the four corner countersinks and directly contact the gold chip as a heat sink. After removing the stain, the thickness of the hole is 17Um by electroless copper plating and electroplating for copper plating. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -44------- *- --- ^ ------ 1T ------ ii (Please read the precautions on the back before this page) 401723 A7 B7 V. Description of Invention U2) Copper plating. The liquid resist is applied to the front and back surfaces and dried to remove the solvent, and then the front film is placed thereon and then exposed and developed to form the front and back circuits. The plating mask is formed on the laminate except for the convex part, the adhesive pad, and the bead pad. The M nickel and gold are plated, and then the M substrate is cut to remove the substrate of the laminated part on the convex part of the central copper sheet, thereby completing printing. Circuit board. It was found that the resin flowing into the top of the gold ridge protrusion removed by the milling cutter was 20 μm or κ. It was also found that the cross section of the clearance hole does not contain voids. Then M similarly bonds the semiconductor and then encapsulates it with resin to form a semiconductor plastic package. The semiconductor package M is connected to an epoxy motherboard printed circuit board in a similar manner. The semiconductor plastic package was evaluated, and Table 5 shows the results. Comparative Example 4 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The same prepregs D and E as in Comparative Example 3 were prepared. Using two pieces of prepreg E, the double-sided copper-plated laminate was prepared by stacking and forming at 170 ° C at 20 kgf / cin2 and 30 nmHg for 2 hours. Then, the printed circuit board was prepared in the same manner as in Comparative Example 1. The semiconductor wafer to be mounted was bored, and a 200 mm thick copper sheet M prepreg was bonded to the reverse side. The prepreg was punched through under heat and pressure. Prepreg D was prepared to obtain a printed circuit board with a heat-resistant sheet attached. The plate caused the saki to some extent. The semiconductor crystal Κ silver paste is directly cobalt bonded to the aforementioned heat sink *, and then connected by wiring and M liquid epoxy resin encapsulation. The bead is attached to the opposite side of the metal attachment surface. The obtained semiconductor package M is connected to the motherboard in a similar manner. The semiconductor plastic package was evaluated, and Table 5 shows the results. 45 (Please read the notes on the back before filling out this page) This paper size applies to Chinese national standards (CNS> Α4 size (210X 297 mm)) B7 V. Description of invention (43) Shellfish Consumer Cooperative, Central Procurement Bureau, Ministry of Economic Affairs Printed Table 5 Example 9 Example 10 Comparative Example 4 ~ Heat resistance after absorption of water ① Normal condition No failure No failure No failure 24 hours No failure No failure No failure 48 hours No failure No failure No failure 72 hours No failure No failure No failure 96 hours without failure 120 hours without failure 1¾ 144 hours without failure Same as 168 hours without failure Same as above with heat absorption after water absorption ② Normal state without failure No failure without failure 24 hours without failure without failure 48 hours peeled without failure, no failure, 72 hours without failure, no failure, disconnection, 96 hours without failure, no failure, disconnected, 120 hours without failure, no disconnected, 144 hours without failure, no failure-168 hours without failure, partial peeling-Tg ( t :) 234 235 145 Insulation resistance (Ω) after pressure cooker test 5 X 1014 6 X 1014 6 X 1014 200 hours 5X 1012 5 X 1012 2x 108 500 hours 4X 1011 7X 1011 < 108 700 hours 6 X 1010 IX 1010-1000 hours 1 X 1010 8x 109-Migration resistance (Ω) Normal state 5 X 1013 6 X 1012 6X 1012 200 hours 5X 1011 5X 1011 7X 108 500 hours 4X 1011 3X 1011 < 108 700 hours 1 X 1011 2X 1011-1000 hours 9 X 1010 8 X 10 10-Heat dissipation rate (° C) 36 .37 48 CEx. = Comparative example Ord.state = ordinary state / Tg = glass transition temperature (please read the precautions on the back before filling out this page) This paper size is in accordance with China National Standard (CNS) A4 (210X 297 (Mm) 46 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 40Π23 A? _B7 V. Description of the Invention (4 · 4) Example 1 1 Varnish A is prepared in the same manner as Example K. Varnish A is used for dipping 1 0 0 w η Thick glass relay and dried at 150 ° C to obtain a semi-cured low-flow prepreg (prepreg B4) with a thickness of 150um, which has a gel time of 170t: 7 seconds and resin flowability at 170 ° C It is 110ϋ / ιπ for 5 minutes at 20kgf / cn2. The impregnated glass fabric was dried at 145 ° C to obtain a highly fluid prepreg (prepreg C1) with a thickness of 170 W m, which had a gel time of 120 seconds at 170 ° C and a resin flowability of 13 mm. In terms of it, the thickness is 200 ίζιπ and contains Cu: 97.3wt! K, Fe.'Z.SwtiK'.F ^ Ol wU, Zn: 0.07wt! L; and Pb: 0.033; the alloy is provided as an inner metal sheet by etching method A convex portion with a size of 13 × 13 nm square and a height of 100 / im is formed, and it is located in the center of the package with a size of 50 × 50 mra square. The black copper oxide treatment was then performed in the same manner as in Example 1 and the prepreg and electrolytic copper foil were laminated, and the obtained set was laminated and integrated under the same conditions as in Example 1, thereby obtaining a double-sided hafnium-plated laminate. The printed circuit board was completed in the same manner as in Example 1, but a through hole was drilled in the clearance hole portion. A 13xl3mm square-sized semiconductor wafer K copper paste is bonded and fixed to the convex portion, and then the wiring and the obtained set K silicon-containing epoxy sealing compound is transferred by compression molding, and a solder ball is attached to obtain a semiconductor package. The semiconductor package is connected to the epoxy resin mother board printed circuit board by melting the bead. The semiconductor plastic package was evaluated and Table 6 shows the results temporarily. Example 1 2 Provide the same prepreg C1 as in Example 1, and electrolytic copper foil with a thickness of 12 / im is placed on the pre-printed paper. Applicable to China National Standard (CNS) A4 (210X297 mm) -4 7-HI—!-H !! Lr mn-l_ ----in 1: 1 mm T 1 ^ 1 n ------ _ n (Please read the notes on the back before filling out this page) 4017S3 at B7 V. Description of the invention (45 ). One side of the immersion, the release film was placed on the other side, and the obtained set was laminated at 20 kgf at 20 kgf / Cnt2 for 2 hours to obtain a single-sided copper-plated laminate. A thickness of 300 will form a rolled copper sheet of the inner layer, processed in the same manner as in Example 1 to form a convex portion, having a square size of 10x10mm and a height of 15win. A clearance hole with a diameter of 0.6mm is also produced. As in Example 1, varnish A is applied to the front and back by screen printing, without resin sticking to the metal convex part. The formed coating is dried to form a resin layer on the front and back. The resin layer is a highly fluid resin layer with a thickness of 45 win and a gelation time of 125 seconds at 170C; and a resin layer on the front side is a low fluidity resin layer with a thickness of 40 and a gelation time of 170 to 10 to 20 seconds. Printed by the Shell Standard Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). The unilateral plated laminate is prepared from the unilateral plated feed laminate obtained previously. The position of the convex part of the gold ridge is made by 40 «!« Larger than the convex part. The laminate is placed on the front side of the aforementioned metal sheet. The single-sided copper-plated laminate obtained above is placed on the reverse side. A double-sided copper-plated laminate was prepared. A hole with a diameter of 0.20 mm was drilled in the center hole so that it did not touch the gold tab of the hole. The through-hole M is drilled in a similar manner in the four corners and directly contacts the metal sheet as a heat sink. After the decontamination treatment, copper plating was performed by electroless plating and electroplating to form a copper plating layer with a thickness of 17 Wm in the holes. A liquid resist is applied to its front and back sides and dried to remove the solvent, and then a positive film is applied to it | followed by calendering and development to form the front and back circuits. The plating cover is formed on the laminated part of the convex part, and the outer part of the adhesive pad and the bead pad M is plated with nickel and gold to complete a printed circuit board. The semiconductor wafer is then bonded in a similar manner, followed by K resin encapsulation and solder beads attached to form a semiconductor plastic package. Semiconductor package M similar method This paper size applies the Chinese National Standard (CNS) A4 specification (210X2S »7mm) _ 48-Printed by the Central Bureau of Economics and Standards Bureau Shellfish Consumer Cooperative A7 B7 V. Description of the invention (46) Connect to Epoxy motherboard printed circuit board. The semiconductor plastic package was evaluated and Table 6 shows the results. Example 13 Varnish A was prepared in the same manner as in Example 1. A low-flow prepreg (prepreg B1) and a high-flow prepreg (prepreg C1) were prepared in the same manner as in Example 11. In terms of it, alloys containing Cu: 97.54vt%, Fe: 2.4wt%, 卩: 0.03 \ # 7%, and Zn: 0.12Wt! «Are provided as inner gold slabs, and formed by etching to have a square size and high The convex part of 22〇win is therefore located in the center of the package of the size of the buckle. Then, a clearance hole having a diameter of 0.6 mm was made in the manner of Example 1. The entire surface of the gold tin sheet is processed to form a black copper oxide. The aforementioned prepreg B1 has a hole that is 110 «m larger than the convex portion. It is made by a counter hole corresponding to the position of the convex portion, and the prepreg B1 covers the upper surface. . The prepreg C covers the lower surface. A 12wm thick electrolytic tin foil is placed on both sides, and the obtained set is laminated to prepare a double-sided tin-plated laminate. The circuit is formed on one side of the laminate, and a slightly larger hole is made by punching a part of the semiconductor wafer to be installed. A black copper oxide treatment is performed, and the resulting laminate is placed on the surface to form the circuit facing down. A copper wad with a thickness of 12 wm was placed on the reverse side of the prepreg, and the obtained set was laminated at 200 kg at 20 kgf / cm2 at 30 mmHg or M for 2 hours to form and integrate the body, so as to obtain a gold bump protrusion exposed on the surface. Double-sided copper plating laminate. A through hole was drilled in the clearance hole portion, and a through hole M with a diameter of 0.2 mm was similarly drilled at the four corners and directly contacted the gold chip as a heat sink. Remove stains The paper size is applicable to China National Standard (CNS) Α4 size (210 × 297 mm) -49-(Please read the precautions on the back before filling this page)

*1T 4017S3 A7 B7五、發明説明（47 ) 於 層 鍍 銅 之 0 U 8 11 厚 成 形 銅 锻 行 進 锻 電 及 敷 锻 電 無 藉。 , 内 後孔 路 電 面 反 及 正 成 形例 實 同 式 方 之 用 採 等 金 鍍 及 鎳 鍍 行 進 板 路 電 刷 印 成完 而* 1T 4017S3 A7 B7 V. Description of the invention (47) 0 U 8 11 thick copper-formed copper forging and forging electricity and applied electricity are not borrowed. The inner and rear holes of the electric circuit are reversed and the shape is exactly the same. The same pattern is used. Gold plating and nickel plating are used.

X 晶 體 導 半 之 寸 尺 方 見 K 焊 合接 集附 得及 所 ， ， 囊 線包 接塑 行壓 進移 後轉 然藉 ， 物 部合 凸化 於封 定密 固脂 及樹 合氧 黏環 糊之 銀氧 Μ 矽 片含 環 6 至 表 接而 連估 珠評 焊經 化體 熔裝 0 封 3#. Η3 體膠 裝塑 封體 體導 導半 半 〇 。 板 體路 装電 封刷 體印 。 導板果 半母结 得脂其 獲樹示 珠氧顯 (請先閱讀背面之注意事項再填寫本I) •装. 訂 經濟却中央標準局貝工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 50 B7 五、發明説明（48 ) 經濟部中央標準局貝工消費合作社印製 表 實例11 實例12 實例13 實例14 吸水後之 耐熱性① 尋常狀態 未故障 未故障 未故障 未故障 72小時 未故障 未故障 未故障 未故障 9 6小時 未故障 未故障 未故障 未故障 120小時 未故障 未故障 未故障 未故障 144小時 未故障 未故嚀 未故障 未故障 168小時 未故障 未故障 未故障 未故障 吸水後之 耐熱性② 尋常狀態 未故障 未故障 未故障 未故障 24小時 未故障 未故障 未故障 未故障 48小時 未故障 未故障 未故障 未故障 72小時 未故障 未故障 未故障 未故障 96小時 未故障 未故障 未故障 未故障 120小時 未故障 未故障 未故障 未故障 144小時 未故障 未故障 未故障 未故障 16 8小時 未故障 部分剝離 未故障 未故障 Tg (°C ) 233 235 234 234 壓力鍋試 驗後之絕 緣電阻 (Ω ) 尋常狀態 5X 1014 6 X 10 14 6 X 1014 4X 1014 200小時 6 X 1012 6 X 1012 6 X 1012 6X 1012 5 00小時 3X 1011 5x 1011 5X 1011 5X 1011 700小時 7 X 1010 1 X 1010 6 X 1010 8 X 1010 1000小時 1 X 1010 9X 109 2 X 1010 6 X 1010 遷移電阻 (Ω ) 尋常狀態 7X 1013 8 X 1012 6 X 1013 5X 1013 200小時 5X 1011 4X 1011 4X 1011 6X 1011 500小時 4X 1011 3X 1011 3X 1011 5X 1011 700小時 2X 1011 2X 1011 2 X 1011 9 X 1010 1000小時 9X 1010 8 X 1010 9X 1010 6 X 1010 散熱率 (V ) 36 36 36 37 Tg=玻璃化溫度 請 先 閲 讀 背 ί) 之 注 意 事 項 再fi 本 頁 裝 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 51 401783 A7 B7 五、發明説明（49) g例14 清漆A係K實例1之相同方式製備。清漆A用於浸请1 0 0 W m 厚玻璃織物及於150 °C乾燥獲得厚107wm之半固化低流動 性預浸物（預浸物B5)，具有膠凝時間於1701C為7秒及樹脂 流動性於1701C於20kgf/cm2歷5分鐘為llOwni。又該浸潰 妥之玻璃織物經乾燥獲得厚109/i m之高流動性預浸物C2* 具有膠凝時間114秒及樹脂流動性13mm。 它方面，提供厚200/ira之銅片構成内層，及液體抗蝕劑 施用於全表而形成厚20win之塗層。塗層經乾煉然後Μ紫 外光照射塗覆妥之銅片，凸部之抗蝕劑留於正面上，餘隙 孔部之抗蝕劑於反面去除，接著MU碳酸納水溶疲顯像。 然後同時於兩面進行蝕刻，正面為l.〇kgf/cm2及背面為 2.5kgf/cm2形成具13X 13mn見方尺寸及高100w m之凸部 ，而位於5〇x50mm見方尺寸之封裝體中央，及餘隙孔直徑 為 於 徑 直 孔 隙 餘 等 相 近 接 面 表 下 -----------裝------訂------後 (請先閲讀背面之注意事項再本頁) 厚 置 安 物 浸 預 置 放 後 理 處 銅 化 氧 色 黑 受 接 片 IMP 8 金 於 行 進 及 萡 銅 解 電 之 式 方 用 採 體1 合 整 供 形 成 經濟部中央標準局貝工消費合作社印製 例 實 同 例 實Μ 係 例層 實鍍 以銅 之 孔 通。 作内 製孔 物於 合 成 層形 片式 靨方 金同 於相 式之 方I 同 相 之 敷 鍍 行 進 金 及 線3ΙΠ Μ I 並 路 電 面 反 及 正 成 形 路 電 刷 印 成 完 而The size of the X crystal guide is shown in the K-welding connection set. The sac line is covered with plastic and then pushed forward. Then the material is convex and sealed in the sealed solid fat and the tree oxygen bonding. Cylindrical silver oxygen M silicon wafers with rings 6 to the surface and successively evaluated bead welding warfare welding 0 seal 3 #. Η3 body plastic package body guide half. Board body road with electric seal brush body printing. The semi-mother fruit of the guide plate is fat-stained, and it is shown by the bead oxygen display (please read the notes on the back before filling in this I) • Packing. Ordered economically but printed by the Central Standards Bureau Shellfish Consumer Cooperatives. (CNS) Α4 specification (210 × 297 mm) 50 B7 V. Description of the invention (48) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. Example 11 Example 12 Example 13 Example 14 Heat resistance after water absorption ① Normal condition without failure No fault no fault no fault 72 hours no fault no fault no fault 9 6 hours no fault no fault no fault 120 hours no fault no fault no fault 144 hours no fault no fault 咛 no fault 168 hours No failure, no failure, no failure, no heat failure after water absorption ② Normal state, no failure, no failure, no failure, no failure, no failure, no failure, no failure, no failure for 48 hours, no failure, no failure, no failure, no failure for 72 hours, no failure, no failure No fault, no fault, no fault, no fault, no fault, no fault No fault, no fault, no fault, 144 hours no fault, no fault, no fault, no fault, 16 8 hours no fault, partial peeling, no fault, no fault, Tg (° C) 233 235 234 234 Insulation resistance (Ω) after pressure cooker test Normal state 5X 1014 6 X 10 14 6 X 1014 4X 1014 200 hours 6 X 1012 6 X 1012 6 X 1012 6X 1012 5 00 hours 3X 1011 5x 1011 5X 1011 5X 1011 700 hours 7 X 1010 1 X 1010 6 X 1010 8 X 1010 1000 hours 1 X 1010 9X 109 2 X 1010 6 X 1010 Migration resistance (Ω) Normal state 7X 1013 8 X 1012 6 X 1013 5X 1013 200 hours 5X 1011 4X 1011 4X 1011 6X 1011 500 hours 4X 1011 3X 1011 3X 1011 5X 1011 700 hours 2X 1011 2X 1011 2 X 1011 9 X 1010 1000 hours 9X 1010 8 X 1010 9X 1010 6 X 1010 Heat dissipation rate (V) 36 36 36 37 Tg = Glass transition temperature Please read the back first) Note fi Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 51 401783 A7 B7 V. Description of the invention (49) g Example 14 Varnish A is prepared in the same manner as in Example K of Example 1. Varnish A is used to soak a 100 W m thick glass fabric and dry it at 150 ° C to obtain a semi-cured low-flow prepreg (prepreg B5) with a thickness of 107 wm. It has a gel time of 7 seconds at 1701C and resin The fluidity is 170W at 1701C at 20kgf / cm2 for 5 minutes. The impregnated glass fabric was dried to obtain a high fluidity prepreg C2 * with a thickness of 109 / im, with a gel time of 114 seconds and a resin fluidity of 13 mm. On the other hand, a copper sheet with a thickness of 200 / ira is used to form the inner layer, and a liquid resist is applied to the entire surface to form a 20win thick coating. The coating is dried and then the coated copper sheet is exposed to UV light. The resist on the convex part is left on the front side, and the resist on the clearance hole part is removed on the reverse side. Etching is then performed on both sides at the same time. The front side is 1.0 kgf / cm2 and the back side is 2.5 kgf / cm2 to form a convex part with a 13X 13mn square size and a height of 100w m, and it is located in the center of the package with a 50x50mm square size. The diameter of the gap is under the surface of the adjacent interface such as straight pores and other similar surfaces. Page) After the thick immersion and immersion pre-setting, the copper oxide black black receiving piece IMP 8 gold is used in the process and the copper is electrolyzed. The square mining body 1 is integrated for the formation of the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The printed example is the same as the example M. The example is plated with copper holes. The internal hole-making material is formed into a layered sheet, the square gold is the same as the phase I, the same phase is plated, and the gold plate and the wire 3III are parallel to the circuit surface of the parallel circuit.

X 之 寸 尺 方 見 厚 η 例 實 同 式 方 其 合 黏 片 晶 體 導 半 而 示 11顯 例 7 簧表 同及 式估 方評 行經 進體 ’ 裝 R 封 包膠 脂塑 樹體 Μ 導 及半 線。 接體 及裝 , 封 部體 凸導 面半 表備 至製 52 本紙張尺度適用中國國家橾準（CNS ) Α4規格（210Χ297公釐） A7 B7 經濟部中央標準局貝工消費合作社印製 五、發明説明 (50) 其 結 果 0 比 較 例 5 實 例 14之 相同 内 層金 靥 片 於 兩 面 於 2k g f /cm2 壓力下蝕 刻 0 所 得 金 屬片 具 有餘 隙 孔 9 其 正 面 直 徑 為0 · 3 in Π及其反 面 直 徑 為 0 . 6mm， 如此形成非均勻之餘隙孔。當製作直徑 0 . 25 m η 之 孔 時， 以 數目 計 9 67¾通孔係接觸内層金屬片。 實 例 15 清 漆 A係以實例1 之相 同 方 式 製 備 〇 清 漆 Α用於浸潰100w m 厚 玻 璃 織 物 及於 15010乾燥獲得厚105 U m之半固化低流動 性 預 浸 物 (預浸物Β2)， 具 有 膠 凝 時 間 於 170 1C為7秒及樹脂 流 動 性 於 1701 於 20kgf/c ffl 2 歷5分 鐘 為 1 1 0 ju ffl 〇 又該浸漬 妥 之 玻 璃 嫌 物經 乾 燥獲 得 厚 109 ί l m 之 高 流 動性 預 浸物C2， 具 有 膠 凝 時 間114秒及樹脂流動性為13m m、 ) 它 方 面 提供 厚 2 5 0 μ m 之 銅 Η 構 成 内 層 ，及 液 體抗蝕劑 施 用 於 全 表 面而 形 成厚 20 U ffl之塗層、 >塗層經乾燥去除溶 劑 及 放 置 負 膜而 留 下餘 隙 孔 部 m 後 Μ 紫 外光 昭 射。餘隙 孔 部 之 光 阻 膜Μ U碳酸 納 水 溶 液 去 除 〇 m 後於 兩 面進行蝕 刻 而 製 成 直 徑0 · 6 IR m之餘隙孔 >然後對下表面施加壓力進 行 壓 紋 而 形 成具 13 X 13 in m 見 方 尺 寸 及 高 1 0 0 ti πι 之 凸部，而 其 位 於 具 50 X 50 in m 見方 尺 寸 之 封 裝 體 中 央 。銅 片 之構造為 下 表 面 有 凹 痕。 於 金 屬 片 接受 黑 色氧 化 銅 處 理 後 放 置 預浸 物 ，安置厚 8 1 ΠΙ 之 電 解 飼萡 及 進行 層 叠 成 形 供 整 合 一 體， 探 用方式同 實 例 1 > Μ實例1 之 相同 方 式 於 金 屬 片 層 合 物製 作 通孔*厚 請 先 閱 讀 背 之 注 項 再 |( 本 頁 訂 本紙張尺度適用中國國家梂準（CNS ) Α4規格（2丨ΟΧ297公釐） -53 - 裝 線 經濟部中央標準局貝工消费合作社印製 A7 B7 五、發明説明（51 ) 17wni之銅鍍層係形成於孔内。 形成正及反面電路並K鎳及金進行鍍敷，其方式同實例 1而完成印刷電路。13X 13mm見方尺寸之半導體晶片黏合 至表面凸部，及接線及Μ樹脂包囊，進行方式同簧例1而 製備半導體封裝體。又附接焊珠，半導體封裝體藉加熱熔 化焊珠而黏合於環氧樹脂母板印刷電路板上。半導體塑膠 封裝體經評估及表7顯示其結果。 實例16 厚 250« m含有 Cu:99.86wU，Pe:0.11vitS!及 P:0.03wtS!將 構成內層之合金提供及K實例1之相同方式加工製作餘隙 孔，四個凸部具4X4mm見方尺寸及高lOOwffl各自形成於表 面上。反面加凹痕。又直徑0.6mm之餘隙孔係Μ實例1之相 同方式製作。預浸物置於金屬片上，厚12Wm之電解銅箔 置於兩面上，其方式如同實例1，所得集合係Μ實例1之相 同條件層叠成形。直徑0.20min之通孔鑽孔於中央而不接觸 餘隙孔部金靥。至於散熱部，鑽孔相同直徑之通孔而接觸 金靥片。於脫去污潰處理後，藉無電鍍鍍敷及電鍍鍍銅而 於孔內形成厚17；uin之飼鍍層。形成正及反面電路，Μ鎳 及金以簧例1之相同方式進行鍍敷而完成印刷電路板。半 導體晶片黏合其上並進行接線及Μ樹脂包囊，其採用方式 如實例1而形成半導體封裝體。半導體封裝體Μ類似方式 黏合於母板。半導體塑膠封裝體經評估及表7顯示其結果。 本紙張尺度逋用中國國家梯準（CNS ) Α4規格（210X297公釐） -^4 ~ ------------款------，訂------ii (請先閱讀背面之注意事項再本頁) 經濟部中央標準局貝工消費合作社印裝 401723 A7 ___B7 五、發明説明（52 ) 表 7 簧例15 實例16 吸水後之 耐熱性① 尋常狀態 未故障 未故陣 24小時 未故障 未故障 48小時 未故障 未故障 7 2小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 144小時 未故障 未故障 168小時 未故障 未故障 吸水後之 耐熱性② 尋常狀態 未故障 未故障 24小時 未故障 未故障 48小時 未故障 未故障 72小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 144小時 未故障 未故障 168小時 未故障 未故障 ^ Tg CC ) 235 234 .壓力鍋試 驗後之絕 緣電阻 (Ω ) 尋常狀態 5 X 10 14 6 X 1014 200小時 5X 10 12 7 X 10 12 5 00小時 3X 1011 2X 1011 700小時 3X 10 10 5 X 10 10 1000小時 2 X 10 10 IX 10 10 遷移電阻 (Ω ) 尋常狀態 4X 10 13 5X 1012 200小時 4X 1011 5 X 1011 500小時 6X 1011 3X 1011 700小時 9 X 10 10 1 X 1011 1000小時 8 X 10 10 8 X 10 10 散热率 (V ) 36 37 0「d. state=尋常狀態 Tg =玻璃化溫度 --------„----Λ------IT------線- (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家梂準（CNS ) A4規格（210X 297公釐） -55- 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明戶3 ) 實例17 清漆A係Μ實例1之相同方式製備。 清漆Α用於浸潰厚1 0 0 w m玻璃織物，浸清妥之織物於1 5 0 乾燥獲得105« in厚半固化預浸物（預浸物B6)，具有膠凝 時間於170°C為10秒，及樹脂流動性於170°C於20kgf/cm2 歷5分鐘為85w m。 提供250wm厚銅片，其待構成内層金屬片。具有13X13 mm見方尺寸及高lOOttm之凸部形成於一表面上*及具有13 X 13mm見方尺寸及高lOOwm乏凸部形成於另一面上*形成 方式採用蝕刻方法而位於具有50Χ50ιηιπ見方尺寸之封裝體 中央。 然後液體抗蝕劑施用於全表面上形成厚25wm之塗層， 塗層經乾燥去除溶劑。具有孔供凸部使用之負膜置於兩側 上，餘隙孔部Μ外部分暴露於紫外光，餘隙孔部之抗蝕膜 係Κ1 ：!；碳酸納水溶疲去除。然後於兩邊藉蝕刻製作直徑 0.6mni之餘隙孔。 金靥片全表面經處理形成黒色氧化銅，前述預浸物B薄 片其具有一孔比凸部大50 wm係藉銑刀製作於對應凸部部 分，該片覆蓋於兩面上，厚18/im之電解鋦萡置於兩側上 ，所得集合於200 °C於20kgf/cni2於3〇mmHs真空或W下歷2 小時層叠成形而整合一體。 於餘隙孔部，Μ雷射於中央製作直徑0.25mra之通孔因而 不接觸餘隙孔部金牖片。脫去污潰處理後，藉無電鍍敷及 電鍍進行鍍铜而形成厚17w m之銅鍍層於孔内。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) -56 - ----U---:----装------訂------綠 (請先閱讀背面之注意事項再填寫本頁) 401783 B7 經濟部中央標準局貝工消費合作社印裝 五、發明説明（54) 1 1 液 體 抗 蝕 劑 施 用 於 正 反 面 上 及 乾 燥 9 放 置 正 膜 9 接 著 曝 1 1 光 及 顯 像 而 形 成 正 及 反 面 電 路 〇 凸 部 上 之 銅 萡 也 同 時 藉 蝕 1 1 刻 去 除 0 /—\ 請 先 1 1 鍍 敷 阻 罩 形 成 於 凸 部 Λ 黏 合 墊 及 珠 墊 以 外 部 分 上 及 VX 閱 讀 背 1 Γ 鎳 及 金 鍍 敷 而 完 成 印 刷 電 路 板 〇 面 之 1 注 然 後 具 13 X 13 mm 見 方 尺 寸 之 半 導 體 晶 片 銀 糊 黏 合 及 固 意 事 1 項 1 定 於 上 表 面 凸 部 9 進 行 接 線 m 後 所 得 集 合 藉 轉 移 壓 塑 Μ 再 填， 1 寫鐵 装 1 含 矽 氧 rm 壞 氧 樹 脂 密 封 化 合 物 包 囊 焊 珠 附 接 於 獲 得 半 導 體 本 頁 封 裝 體 (圖 7) l >半導體封裝體藉熔化焊珠連接至環氧樹脂 1 1 母 板 印 刷 電 路 板 0 半 導 體 塑 膠 封 裝 體 經 評 估 表8顯示其 1 I 結 果 0 1 訂 實 例 18 1 使 用 如 實 例 17所得 之相同預浸物Β6薄 片 厚 18 U m之電 1 1 解 銅 箔 置 於 一 面 上 離 形 膜 置 於 另 一 面 上 所 得 集 合 於 1 1 20013 於 20kgf/c m 2 歷2小 時 層 叠 成 形 而 製 備 單 邊 鍍 銅 層 合 1 線 物 〇 含 C U : 9 9 . 86wt% F e ^ 0 . 11 wt!S及 P ：0 .0 3 w u用於構成 内 1 I 層之250 < 1 m 厚 合 金 薄 片 係 Μ 實 例 17之 相 同 方 式 提 供 及 加 工 ί 而 形 成 具 有 實 例 17之 相 同 尺 寸 及 高 度 之 凸 部 0 又 製 作 直 徑 1 1 0 . 6 π m之餘隙孔 ，預浸物B6 Μ類似方式置於上邊及下邊 1 1 如 上 述 得 之 單 邊 鍍 銅 層 合 片 層 於 兩 邊 及 所 得 集 合 於 相 同 1 1 條 件 下 層 叠 成 形 〇 於 餘 隙 孔 部. t 直 徑 0 . 20 m m 之 通 孔 鑽 孔 於 1 ί I 中 央 因 而 未 接 觸 餘 隙 孔 部 金 屬 0 於 脫 去 污 濱 處 理 後 * 藉 無 1 1 電 鍍 敷 及 電 鍍 進 行 鍍 銅 而 形 成 厚 17 u m之銅鍍層於孔内 1 1 液 體 抗 蝕 劑 施 用 於 正 反 面 上 及 乾 煉 而 去 除 溶 劑 f 安 置 正 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -57 - 401723 λ7 Β7五、發明説明（55) 分 Β· 咅 外 以 墊 珠 及 。 墊 路合 電黏 0 反部 及凸 正於 成 Η 形叠 像 層 顯於 及成 光形 曝罩 著阻 接敷 ， 鍍 膜 部 晶 片體 合導 層半 之後 上然 部 。 凸板 片路 金 電 合 刷 銅印 央成 中完 於而 . 除 敷去 鍍割 行缺 進刀 金銑 及 Μ 鎳材 以基 ， 分 而同 珠相 焊之 接17 附例 及實 囊以 包 係 脂體 樹裝 Μ封 著體 接導 ， 半 定 。 固體 及裝 合封 黏 嘐 3¾¾ nflfl 式塑 方體 似導 類半 M得 Η 獲 表 及 估 評 經 體 裝 封 膠 塑 嫿 -HS 導 半 Ο 板 路 電 刷 印 板 母 接 2 式 方 I 结 其 示 顯 8 (請先閲讀背面之注意事項再填寫本頁) -装. ，1Τ 經濟部中央標準局貝工消费合作社印製 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） 58 五、發明説明) A7 B7 經濟部中央標準局員工消費合作社印製 表 實例17 實 例 18 吸 水 後 之 尋常狀態 未故障 未 故 障 耐 熱 性 ① 120小時 未故障 未 故 障 144小時 未故障 未 故 障 168小時 未故障 未 故 障 吸 水 後 之 尋常狀態 未故障 未 故 障 附 熱 性 ② 24小時 未故障 未 故障 48小時 未故障 未 故 障 72小時 未故障 未 故 障 96小時 未故障 未 故障 120小時 未故障 未 故障 144小時 未故障 未 故 障 168小時 未故障 部 分 剝離 Tg (V ) 235 - 壓 力 鍋 試 尋常狀態 4 X 10 14 - 驗 後 之 絕 200小時 4X 10 12 緣 電 阻 500小時 5X 1011 (Ω ) 700小時 8 X 10 10 1000小時 2 X 10 10 遷 移 電 阻 尋常狀態 5 X 10 13 (Ω ) 200小時 5 X 1011 500小時 3 X 1011 700小時 1 X 1011 1000小時 8 X 10 10 散 熱 率 (V ) 32 35X-inch ruler sees thickness η. Example is the same formula. The crystal of the adhesive sheet is shown in half. Example 11 is shown. 7 The spring table is equivalent to the formula. The evaluation is conducted through the body. line. Fittings and fittings, half of the convex guide surface of the sealing body to the system 52 This paper size is applicable to China National Standards (CNS) A4 specifications (210 × 297 mm) A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Explanation (50) The result is 0 Comparative Example 5 The same inner-layer gold foil of Example 14 is etched on both sides under a pressure of 2k gf / cm2. The obtained metal sheet has clearance holes 9 with a front diameter of 0 · 3 in Π and its back diameter. It is 0.6 mm, thus forming a non-uniform clearance hole. When making holes with a diameter of 0.25 m η, the number of 9 67¾ through holes is in contact with the inner metal sheet. Example 15 Varnish A was prepared in the same manner as in Example 1. Varnish A was used to impregnate a 100w m thick glass fabric and dried at 15010 to obtain a semi-cured low-flow prepreg (prepreg B2) with a thickness of 105 U m. Gel time at 170 1C for 7 seconds and resin fluidity at 1701 at 20kgf / c ffl 2 for 5 minutes is 1 1 0 ju ffl 〇 The impregnated glass suspect is dried to obtain a high fluidity of 109 lm Prepreg C2, with a gel time of 114 seconds and a resin fluidity of 13 mm, it provides copper Η with a thickness of 250 μm to form the inner layer, and a liquid resist is applied to the entire surface to form a thickness of 20 U ffl The coating, > The coating was dried to remove the solvent, and the negative film was left to leave a clearance hole m after the UV light was projected. The photoresist film MU U of the sodium carbonate solution in the clearance hole portion was removed and etched on both sides to form clearance holes with a diameter of 0.6 IR m. Then, pressure was applied to the lower surface to form 13 X. 13 in m square dimensions and a bump with a height of 100 ti πm, which is located in the center of the package with a 50 X 50 in m square size. The copper sheet is structured with dents on the lower surface. After the metal sheet was treated with black copper oxide, a prepreg was placed, an electrolytic feeder with a thickness of 8 1 Π 1 was placed, and the lamination was formed for integration. The detection method was the same as that of Example 1 > Μ Example 1 and laminated on the metal sheet. Material production through hole * thickness, please read the note on the back first | (The page size of this page applies to China National Standards (CNS) Α4 size (2 丨 〇 × 297 mm) -53-Assembly Bureau Central Standards Bureau Printed by the Industrial and Consumer Cooperatives A7 B7 V. Description of the invention (51) The 17wni copper plating layer is formed in the hole. The front and back circuits are formed and K nickel and gold are plated. The method is the same as in Example 1 to complete the printed circuit. 13X 13mm Square-shaped semiconductor wafers are bonded to the surface protrusions, wiring and M resin encapsulation, and the semiconductor package is prepared in the same manner as in Spring Example 1. Solder beads are also attached, and the semiconductor package is bonded to epoxy by heating and melting the beads Resin mother board printed circuit board. The semiconductor plastic package was evaluated and the results are shown in Table 7. Example 16 250 «m thick Cu: 99.86wU, Pe: 0.1 1vitS! And P: 0.03wtS! Will provide the alloy forming the inner layer and process the clearance hole in the same way as in Example 1. Four convex parts with a 4X4mm square size and a height of 100wffl will be formed on the surface. Dimples are added on the reverse side. A clearance hole with a diameter of 0.6 mm was made in the same manner as in Example 1. The prepreg was placed on a metal sheet, and an electrolytic copper foil with a thickness of 12 Wm was placed on both sides, in the same manner as in Example 1. The obtained set was the same as that in Example 1. Laminated forming. A through hole with a diameter of 0.20min is drilled in the center without contacting the gold hole in the clearance hole. As for the heat dissipation part, a through hole of the same diameter is drilled to contact the gold ring. After decontamination treatment, Electroplating and copper plating to form a thickness of 17 in the hole; Uin feed plate. Forms the front and back circuits. M nickel and gold are plated in the same way as in Example 1 to complete the printed circuit board. The semiconductor wafer is bonded to it Wiring and M resin encapsulation are used to form a semiconductor package in the same manner as in Example 1. The semiconductor package M is bonded to the mother board in a similar manner. The semiconductor plastic package is evaluated and the results are shown in Table 7. This paper scale 逋Use China National Ladder Standard (CNS) Α4 specification (210X297 mm)-^ 4 ~ ------------ section ------, order ------ ii (please first (Please read the notes on the back page) (Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, 401723 A7 ___B7 V. Description of the invention (52) Table 7 Spring example 15 Example 16 Heat resistance after water absorption ① Normal condition without failure 24 hours without failure 48 hours without failure 7 2 hours without failure 96 hours without failure 120 hours without failure 144 hours without failure 144 hours without failure 168 hours without failure Heat resistance after water absorption ② Normal Status No Failure No Failure 24 hours No Failure No Failure 48 Hour No Failure No Failure 72 Hour No Failure No Failure 96 Hour No Failure No Failure 120 Hour No Failure No Failure 144 Hour No Failure No Failure 168 Hour No Failure No Failure ^ Tg CC ) 235 234 .Insulation resistance after pressure cooker test (Ω) Normal state 5 X 10 14 6 X 1014 200 hours 5X 10 12 7 X 10 12 5 00 hours 3X 1011 2X 1011 700 hours 3X 10 10 5 X 10 10 1 000 hours 2 X 10 10 IX 10 10 Migration resistance (Ω) Normal state 4X 10 13 5X 1012 200 hours 4X 1011 5 X 1011 500 hours 6X 1011 3X 1011 700 hours 9 X 10 10 1 X 1011 1000 hours 8 X 10 10 8 X 10 10 Heat dissipation rate (V) 36 37 0 「d. State = normal state Tg = glass transition temperature --------„ ---- Λ ------ IT ------ Line-(Please read the notes on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) -55- Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 5 3) Example 17 Varnish A was prepared in the same manner as in Example 1. Varnish A is used for impregnating glass fabrics with a thickness of 100 wm. Dry the impregnated fabrics at 150 to obtain 105 «in thick semi-cured prepregs (prepreg B6) with a gel time of 170 ° C. 10 seconds, and the resin fluidity at 170 ° C at 20kgf / cm2 for 5 minutes was 85w m. A 250 wm thick copper sheet is provided, which is to be formed into an inner metal sheet. A convex portion with a size of 13 × 13 mm square and a height of 100 ttm is formed on one surface * and a lack of convex portion with a size of 13 X 13 mm square and a height of 100 wm is formed on the other side. central. A liquid resist is then applied to the entire surface to form a coating with a thickness of 25 wm. The coating is dried to remove the solvent. The negative film with holes for the convex portion is placed on both sides, the outer part of the gap hole portion M is exposed to ultraviolet light, and the anti-corrosion film of the gap hole portion is K1:!; Then, a clearance hole with a diameter of 0.6mni was formed on both sides by etching. The entire surface of the gold tincture sheet is processed to form ocher copper oxide. The prepreg B sheet has a hole larger than the convex part by 50 wm. It is made by a milling cutter on the corresponding convex part. The electrolytic plutonium was placed on both sides, and the obtained set was laminated and integrated at 200 ° C at 20 kgf / cni2 under 30 mmHs vacuum or W for 2 hours. In the clearance hole portion, the M laser is used to make a through hole with a diameter of 0.25 mra in the center so that it does not contact the gold diaphragm of the clearance hole portion. After the decontamination treatment, copper plating was performed by electroless plating and electroplating to form a copper plating layer with a thickness of 17 wm in the holes. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) -56----- U ---: ---- installation ------ order ------ green (please Read the precautions on the back before filling this page) 401783 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (54) 1 1 Liquid resist applied to the front and back sides and dried 9 Place the front film 9 Next Expose 1 1 light and display to form the front and back circuits. The copper 萡 on the convex part is also removed by etching 1 1 at the same time. 0 / — \ Please first 1 1 The plating mask is formed on the convex part Λ adhesive pad and bead pad The outer part and the VX reading back 1 Γ Nickel and gold plating finishes the printed circuit board. 1 of the side. Note then a semiconductor wafer with a size of 13 X 13 mm square. Silver paste adhesion and fixation. 1 item 1 is defined on the upper surface. Part 9 performs wiring m and fills it by transfer compression molding M, 1 Wrought iron package 1 Silicon-containing rm bad oxygen resin sealing compound encapsulated solder ball attached to the obtained semiconductor package on this page (Figure 7) l > The semiconductor package is connected to the epoxy resin by melting the solder beads 1 1 Motherboard printing Circuit board 0 The semiconductor plastic package was evaluated. Table 8 shows 1 I. Result 0 1 Order Example 18 1 Use the same prepreg B6 as in Example 17. Thin sheet 18 U m. 1 1 Dissolve the copper foil on one side and separate it. The film was placed on the other side, and the set was collected on 1 1 20013 at 20 kgf / cm 2 over 2 hours to form a single-sided copper-plated laminated wire 1 containing CU: 9 9. 86 wt% F e ^ 0. 11 wt ! S and P: 0. 0 3 wu 250 < 1 m thick alloy flakes used to form the inner 1 I layer are provided and processed in the same manner as in Example 17 to form protrusions having the same size and height as in Example 17. 0 make diameter 1 1 0. 6 Clearance holes of π m, prepreg B6 M placed on the upper and lower sides in a similar manner 1 1 The single-sided copper-clad laminated sheet obtained as described above was laminated on both sides and the resulting set was formed under the same 1 1 condition. 0 In the clearance Hole section. T. 0. 20 mm diameter through hole drilled in the center of 1 ί I so that it does not contact the clearance hole section metal 0 after decontamination treatment * By 1 1 electroplating and copper plating to form a thick 17 um copper plating in the hole 1 1 Liquid resist applied on the front and back side and dried to remove the solvent f Placement of positive 1 1 This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) -57- 401723 λ7 B7 V. Description of the invention (55) Sub-B. The back part of the pad is electrically and negatively convex and is formed on the 于 -shaped superimposed layer. The exposed part of the coating layer is exposed and the light-shielding layer is applied. Convex sheet metal alloy brushes copper seals are finished in the middle. In addition to the plating and cutting lines, the metal cutter and the nickel material are used as the basis, and the welds are connected with the beads. The liposome-encapsulated liposomes are encapsulated with M sealers, semi-fixed. Solid and assembled sealing adhesive 3¾¾ nflfl-type plastic cube-like semi-M to obtain the table and evaluation Warp body sealing plastic plastic-HS guide half 〇 Board circuit brush printing plate female connection 2 square I knot Its display 8 (Please read the precautions on the back before filling out this page)-Packing., 1T Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative, this paper is printed in accordance with China National Standards (CNS) A4 (210X297 mm) ) 58 V. Description of the invention) A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Example 17 Example 18 The normal state after water absorption is not faulty and not faulty Heat resistance ① 120 hours without faults and 144 hours without faults and 168 hours without faults Normal status after water absorption without failure No failure without failure Heat attached ② 24 hours without failure 48 hours without failure 72 hours without failure 96 hours without failure 120 hours without failure 144 hours without failure 168 hours without failure (V) 235-Pressure cooker test normal state 4 X 10 14-Absolute 200 hours after test 4X 10 12 Edge resistance 500 hours 5X 1011 (Ω) 700 hours 8 X 10 10 1000 hours 2 X 10 10 Migration resistance normal state 5 X 10 13 (Ω) 200 hours 5 X 1011 500 hours 3 X 1011 700 hours 1 X 1011 1000 hours 8 X 10 10 Heat dissipation (V) 32 35

Tg =坡璃化溫度 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 59 -------U----装------訂------淥 (請先閲讀背面之注意事項再h本頁) A7 B7 經濟部中央標準局貝工消費合作杜印製 五、發明説明 (57) 實 例 19 清 漆A係Μ實例1 之相 同 方 式 製 備 0 清 漆 A用於浸漬厚1 0 0 U m玻瑀織物， 浸潰妥之織物於1 50 °c 乾 燥 獲得1 0 5 W ΠΙ厚半 固 化 預浸 物 (預浸物Β2) 9 具 有 膠 凝 時 間 於 1 7 0 υ為7秒，及 樹 脂 流動 性 於 1 7 0。。於 2 0 k g f / C HI 2 歷5分 鐘 為110/i ia。又製 備 厚 109 l t m 之 預 浸 物C2 9 其 具 有 膠 凝 時 間 11 4秒及樹脂流 動 性 1 3 ffl m ο 提 供 250 t t m 厚 銅 片， 其 待 構 成 内 層 金 屬 片。具有13 X 13 mm 見方 尺 寸 及 高 100 a t m 之 凸 部 形 成 於 一 表面上因而位於 50 X 5 0mm 見 方 尺 寸 之封 裝 體 中 央 及 寬 5 m m高IOOju m之凸 部 係 形成 於 正 面 及 反面 緣 部 〇 及 直 徑 0 . 6 m m之餘隙孔係K 實 例 17之 相 同 方 式 製作 但 蝕 刻 阻 罩 改 成 20 /U m。金靥片之 全 表 面經 處 理 而 形 成黑 色 氧 化 銅 前 述 低 流動性預浸物B 具 有 孔大 於 凸 部 達 5 0 /i m 係藉銑刀製作於對應於凸部部 分 預浸 物 B覆蓋於正面 及高流動性預浸物c覆蓋於背面 9 預 浸物 C具有孔大於散熱凸部達100 U m， 厚18w m之電解 銅 萡 置於 兩 側 上 所得 集 合 於 2 0 0 t：於 2 0 k g f / c m 2 於 30 m πι Hg真 空 或 Μ 下 歷2小時層叠成形而整合一體。於餘隙 孔 部 ，以 雷 射 於 中 央製 作 直 徑 0 . 25 m m 之 通 孔因而不接觸餘 孔 部 金屬 Η 0 脫 去 污潰 處 理 後 藉 無 電 鍍 敷及電鍍進行鍍 铜 而 形成 厚 17 U m之銅鍍層於孔内 =液體抗蝕劑施用於正 反 面 上及 乾 煉 9 放 置正 膜 9 接 著 暍 光 及 顯 像而形成正及反 面 電 路。 凸 部 之 銅 萡也 同 時 藉 蝕 刻 去 除 而 獲得印刷電路板 〇 鍍 敷阻 罩 形 成 於 凸部 Λ 黏 合 墊 及 珠 墊 以 外部分上及K鎳 頁 本紙張尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐） -60 - 請 先 閱 讀 背 之 注 意 事 項 再 訂 A7 B7 經濟部中央標準局貝工消费合作社印裝 五、發明説明（58) 1 1 及 金 鍍 敷 而 完 成 印 刷 電 路 板 0 1 然 後 具 13 X 13 m το 見 方 尺 寸 之 半導體晶 片 以 銀 糊 黏 合 及固 1 定 於 上 表 面 凸 部 進 行 接 線 然後所得 集 合 藉 轉 移 壓 塑Μ ✓—v 請 先 1 1 含 矽 氧 環 氧 樹 脂 密 封 化 合 物 包 囊，焊珠 附 接 於 珠 墊 獲 得半 閱 讀 背 1 { 1 I 導 體 封 裝 體 (圖 9)、 半導體封裝體係藉加熱熔化焊珠而連 之 1 注 f 1 接 意 至 母 板 印 刷 電 路 板 〇 半 導 體 塑膠封裝 體 經 評 估 表9顯 事 1 項 1 示 其 結 果 0 再 填/ 1 實 例 20 頁 裝 1 使 用 如 實 例 19所得 之 相同預浸物B 2薄 片 厚 19 U m之電 1 1 解 銅 箔 置 於 一 面 上 9 離 形 膜 置 於另一面 上 * 所 得 集 合 於 1 I 200 1C 於 20k g f / C m 2 歷2小時層叠成形而 製 備 單 邊 鍍 銅 層合 1 訂 物 0 1 | 含 C u :99. 86 W t ^ 1 F e * 0 . 11 wtS：及 P:0.03w U用於構成内層 1 1 之 250 a / m 厚 合 金 薄 片 係 Μ 實 例 19之相同 方 式 提 供 及 加 工而 1 1 形 成 具 有 實 例 19之 相 同 尺 寸 及 高度之二 凸 部 及 具 有 寬 5mm 1 眯 及高l〇(W / m 之 凸 部 於 正 面 及 反 面緣部。 又 製 作 直 徑 0 . 6 mis Γ I 之 餘 隙 孔 具 有 凸 部 用 孔 之 預 浸物B置於上表面 及具有 1 1 一 孔 位 於 對 應 散 熱 凸 部位置之預浸物C置於反面 如上述 1 1 得 之 單 邊 鍍 銅 層 合 片 置 於 兩 邊 ，及所得 集 合 於 相 同 條 件下 1 1 層 叠 成 形 〇 於 餘 隙 孔 部 直 徑 0 · 2 0 m in 之 通 孔 鑽 孔 於 中 央因 1 | 而 未 接 觸 餘 隙 孔 部 金 屬 〇 於 脫. 去污潰處 理 後 藉 無 電 鍍敷 1 I 及 電 鍍 進 行 鍍 銅 而 形 成 厚 17 U m之銅鍍層於孔内 >疲體抗 1 1 1 蝕 劑 施 用 於 正 反 面 上 及 乾 煉 而 去除溶劑 安 置 正 膜 接著 1 1 曝 光 及 顧 像 形 成 正 及 反 面 電 路 。鍍敷阻 罩 形 成 於 黏 合 墊及 1 1 本紙張尺度適用中國國家標準（CNS〉A4規格（210X297公釐） 401723 A7 B7 五、發明説明（59) 珠墊以外部分，以鎳及金進行鍍敷，於中央銅合金片凸部 上之層合片部分基材Μ銑刀缺割去除而完成印刷電路板。 然後半導體晶片Μ類似方式黏合及固定，接著Μ樹脂包囊 及附接焊珠而獲得半導體塑膠封裝體。半導體封裝體係Μ 實例19之相同方式連接母板印刷電路板。半導體塑膠封裝 體經評估及表9顯示其结果。 (請先閲讀背面之注意事項再填寫本頁) •装. 訂 經濟部中央標準局貝工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） _ 6 2 _Tg = slope glass temperature This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 59 ------- U ---- installation ------ order ------渌 (Please read the precautions on the back first, then this page) A7 B7 Printed by the Central Bureau of Standards of the Ministry of Economic Affairs of the Department of Shellfish Consumer Cooperation 5. Printed on the Invention (57) Example 19 Varnish A is prepared in the same manner as Example M. 0 Varnish A It is used to impregnate 100 μm thick glass fiber fabric. The impregnated fabric is dried at 1 50 ° c to obtain 1 0 5 W Π1 thick semi-cured prepreg (pre-preg B2) 9 with gel time at 1 7 0 υ is 7 seconds, and the resin fluidity is 1 7 0. . It is 110 / i ia for 5 minutes at 20 k g f / C HI 2. A prepreg C2 9 with a thickness of 109 l t m was prepared, which had a gel time of 11 4 seconds and fluidity of the resin 1 3 ffl m ο A 250 t tm thick copper sheet was provided, which was to be formed into an inner metal sheet. A convex portion having a size of 13 X 13 mm square and a height of 100 atm is formed on a surface, so that it is located at the center of the package having a size of 50 X 50 mm square and a convex portion having a width of 5 mm and a height of 100 mm is formed on the front and back edge portions. A clearance hole with a diameter of 0.6 mm was made in the same manner as in Example 17 except that the etching mask was changed to 20 / U m. The entire surface of the gold tincture is treated to form black copper oxide. The aforementioned low-flow prepreg B has holes larger than the convex portion by 50 / im. The prepreg B corresponding to the convex portion is made by a milling cutter and covered on the front surface. High fluidity prepreg c covers the back surface 9 Prepreg C has holes larger than the heat-dissipating protrusions up to 100 U m, and a thickness of 18w m of electrolytic copper tin is placed on both sides and is collected at 200 t: at 20 kgf / cm 2 is laminated and integrated under a vacuum of 30 m π Hg or M for 2 hours. In the clearance hole part, a through hole with a diameter of 0.25 mm is made by a laser in the center so that it does not contact the metal part of the clearance hole. 0 After decontamination treatment, copper plating is performed by electroless plating and electroplating to form a thickness of 17 U m The copper plating layer in the hole = the liquid resist is applied to the front and back surfaces and the dry surface 9 is placed. The front film 9 is then calendered and developed to form the front and back circuits. The copper bumps on the bumps are also removed by etching to obtain a printed circuit board. The plating mask is formed on the bumps and other parts other than the adhesive pads and bead pads, and the K nickel sheet. 210 X 297 mm) -60-Please read the precautions before ordering A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, Ltd. 5. Description of the invention (58) 1 1 and gold plating to complete the printed circuit board 0 1 Then a semiconductor wafer with a size of 13 X 13 m το is bonded and fixed with a silver paste. 1 It is fixed on the upper surface of the convex part for wiring. Then the obtained assembly is transferred by compression molding. ✓-v Please first 1 1 Silicone epoxy resin sealing compound Encapsulation, solder beads attached to the bead pad to obtain a half-reading back 1 {1 I conductor package (Figure 9), semiconductor packaging system connected by heating and melting the solder beads 1 Note f 1 intended to be printed on the motherboard printed circuit board. The conductive plastic package was evaluated in Table 9 and showed 1 item 1 and the result is shown. 0 Refill / 1 Example 20 Page 1 1 Use the same prepreg B obtained in Example 19 2 Sheet thickness 19 U m. Electricity 1 1 Copper foil Placed on one side 9 Release film on the other side * The resulting set was collected in 1 I 200 1C at 20k gf / C m 2 over 2 hours to form a single-sided copper-clad laminate 1 Order 0 1 | Contains Cu : 99. 86 W t ^ 1 F e * 0.11 wtS: and P: 0.03w U 250 a / m thick alloy flakes used to form the inner layer 1 1 are provided and processed in the same manner as in Example 19 and 1 1 is formed The two convex portions having the same size and height of Example 19 and the convex portions having a width of 5 mm 1 mm and a height of 10 (W / m) are on the front and back edge portions. A prepreg B with a clearance hole diameter of 0.6 mis Γ I and a hole for a convex portion is placed on the upper surface and a prepreg C with a hole located at a position corresponding to the heat dissipation convex portion C is placed on the reverse side as described above 1 The obtained single-sided copper-plated laminated sheet was placed on both sides, and the obtained set was formed under the same conditions. 1 1 Laminated and formed. 0 The through hole with a hole diameter of 0 · 2 0 mm in the hole was drilled in the center because of 1 | The metal in the hole of the contact gap is removed. After the decontamination treatment, copper plating is performed by electroless plating 1 I and electroplating to form a copper plating layer with a thickness of 17 U m in the hole.> Fatigue resistance 1 1 1 Etchant applied The front and back surfaces and the dry side are removed to remove the solvent, and the front and rear films are arranged, followed by 1 1 exposure and image formation to form front and back circuits. The plating mask is formed on the adhesive pad and 1 1 This paper size applies to Chinese national standards (CNS> A4 specification (210X297 mm) 401723 A7 B7 V. Description of the invention (59) The parts other than the bead pad are plated with nickel and gold Then, a part of the substrate M of the laminated sheet on the convex part of the central copper alloy sheet is cut and removed to complete the printed circuit board. Then the semiconductor wafer M is adhered and fixed in a similar manner, and then M resin is encapsulated and solder beads are attached to obtain Semiconductor plastic package. Semiconductor package system M Example 19 is connected to the mother board printed circuit board. The semiconductor plastic package is evaluated and the results are shown in Table 9. (Please read the precautions on the back before filling out this page) • Installation. The paper standard printed by the Central Bureau of Standards of the Ministry of Economic Affairs of the Bayong Consumer Cooperative is applicable to the Chinese National Standard (CNS) Α4 specification (210X297 mm) _ 6 2 _

A B 五、發明説明（60) 經濟部中央標準局員工消费合作社印製 表 9 實例1 9 實例20 吸水後之 附熱性① 尋常狀態 未故障 未故障 24小時 未故障 未故障 48小時 未故障 未故障 72小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 144小時 未故障 未故障 168小時 未故障 未故障 吸水後之 耐熱性② 尋常狀態 未故障 未汝障 24小時 未故障 未故障 48小時 未故障 未故障 72小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 144小時 未故障 未故障 168小時 未故障 未故障 Tg (υ) 234 - 壓力鍋試 驗後之絕 緣電阻 (Ω ) 尋常狀態 3 X 10 14 - 200小時 5 X 10 12 500小時 5X 1011 700小時 8 X 10 10 1000小時 4 X 10 10 遷移電阻 (Ώ ) 尋常狀態 5 X 10 13 200小時 4Χ 1011 500小時 5X 1011 700小時 9 X 10 10 1000小時 8 X 10 10 散熱率 溫度週期 測試 (1C ) 30 31 100週期 未故陣 未故陣 300週期 未故陣 未故陣 500週期 未故陣 部分剝離 Tg =玻璃化溫度 本紙張尺度適用中國國家梂準（CNS ) A4規格（210X297公釐） 63 經濟部中央標準局貝工消費合作社印装 A7 B7 五、發明説明（61) 實例21 清漆A係以實例1之相同方式製備。清漆A用於浸漬厚1 0 0 ϋΐη玻璃織物，浸漬妥之織物於150 °C乾燥獲得厚105« m之 半固化預浸物（預浸物B2)，具有膠凝時間於17〇υ為7秒及 樹脂流動性於170C於20kgf/cm2歷5分鐘為llOwm。又也 製備厚1 09 w m之預浸物C2，其具有膠凝時間11 4秒及樹脂 流動性13mm。 提供250/iB厚銅片，其待構成内層金屬片，及具有13X 13mm見方尺寸及高100« m之凸部形成於一面，因而位於50 X 50mm見方尺寸之封裝體中央*具有寬5m id及高ΙΟΟϋ 凸部形成於下表面緣部。然後Μ實例19之相同方式製備半 導體封裝體。焊珠係附接於封装體珠墊，半導體封裝體藉 加熱熔化焊珠而連接至環氧樹脂母板印刷電路板。半導體 塑膠封装體經評估，表10顯示其結果。 實例22 使用如實例2 1所得之相同預浸物Β 2薄片，厚1 8 w m之電 解銅箔置於一面上，離形膜置於另一面上，所得集合於 200 °C於20kgf/cm2歷2小時層叠成形而製備單邊鍍銅層合 物〇 含 Cu:99.86wt%，Fe:0. llwta：及 P:0.03wtS：用於構成内層 之250wm厚合金薄片係Μ實例.21之相同方式提供及加工而 形成具有實例19之相同尺寸及高度之二凸部及具有寬5 mm 及高100« π之凸部於下表面緣部。 製作一餘隙孔*製造通孔，以銅鍍敷通孔*及形成正及 本紙張尺度適用中國國家標準（CNS ) Α4规格（210X297公釐） -64 - I------1----------.-IT------線· (請先閱讀背面之注意事項再本頁) 4017S3 A7 B7 五、發明説明（62) 反面電路皆係Μ實例20之相同方式進行。 鍍敷阻罩係形成於基材之待安裝半導體晶片部分、黏合 墊部、珠墊部及下表面（反面）之散熱金靥暴露部Μ外部分 ，鍍敷係Κ鎳及金進行，銅片凸部上之層合片部基材以銑 刀缺割去除因而完成印刷電路板。然後黏合半導體晶片， 進行接線，所得集合Μ樹脂包囊形成半導體封裝體。半導 體封裝體係Μ實例21之相同方式Κ焊珠連接至母板印刷電 路板。半導體塑膠封裝體經評估及表10顯示其结果。 ml- mu nn -vl^—· ^n· HI ml ml nn (請先閱讀背面之注意事項再本頁) 、βτ 經濟部中央橾準局貝工消費合作社印製 本紙張尺度適用中國國家梯準（CNS ) Α4规格（210X297公釐） -65 _AB V. Description of the invention (60) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 9 Example 1 9 Example 20 Heat absorption after water absorption Hours without failure 96 hours without failure 120 hours without failure 144 hours without failure 168 hours without failure 168 hours without failure Heat resistance after water absorption ② Normal status without failure 24 hours without failure 48 hours No fault no fault 72 hours no fault 96 hours no fault 120 hours no fault 144 hours no fault 168 hours no fault Tg (υ) 234-Insulation resistance (Ω) after pressure cooker test State 3 X 10 14-200 hours 5 X 10 12 500 hours 5X 1011 700 hours 8 X 10 10 1000 hours 4 X 10 10 Migration resistance (Ώ) Normal state 5 X 10 13 200 hours 4X 1011 500 hours 5X 1011 700 hours 9 X 10 10 1000 hours 8 X 10 10 Thermal cycle temperature test (1C) 30 31 100 cycles of unreasonable array 300 cycles of unreasonable array 300 cycles of unreasonable array 500 cycles of unreasonable array Partial stripping Tg = glass transition temperature This paper size applies to China National Standards (CNS) A4 (210X297 mm) 63 Central Ministry of Economic Affairs Printed by the Bureau of Standards, Shellfisher Consumer Cooperative A7, B7 V. Description of Invention (61) Example 21 Varnish A was prepared in the same manner as in Example 1. Varnish A is used to impregnate glass fabrics with a thickness of 100 0 ϋΐη. The impregnated fabric is dried at 150 ° C to obtain a semi-cured prepreg (prepreg B2) with a thickness of 105 «m. The second and resin fluidity were 170Wm at 170C and 20kgf / cm2 for 5 minutes. A prepreg C2 having a thickness of 1 09 w m was also prepared, which had a gel time of 114 seconds and a resin flowability of 13 mm. Provide 250 / iB thick copper sheet, which is to be an inner layer metal sheet, and a convex part with a size of 13X 13mm square and a height of 100 «m is formed on one side, so it is located in the center of a package of 50 X 50mm square size * with a width of 5m A high 100 ° convex portion is formed on the lower surface edge portion. A semiconductor package was then prepared in the same manner as in Example 19. The solder beads are attached to the package bead pad, and the semiconductor package is connected to the epoxy mother board printed circuit board by heating and melting the solder beads. The semiconductor plastic package was evaluated, and Table 10 shows the results. Example 22 Using the same prepreg B 2 sheet obtained in Example 21, an electrolytic copper foil with a thickness of 18 wm was placed on one side, and a release film was placed on the other side. The obtained assembly was at 200 ° C at 20 kgf / cm2. 2 hours of lamination forming to prepare a single-sided copper-plated laminate 0 containing Cu: 99.86 wt%, Fe: 0.11 wta: and P: 0.03 wtS: a 250 wm thick alloy sheet used to form the inner layer is an example M. 21 Provided and processed to form two convex portions having the same size and height as in Example 19, and a convex portion having a width of 5 mm and a height of 100 «π on the lower surface edge portion. Make a clearance hole * Make a through hole, copper plated through hole * and form the original paper size Applicable to China National Standard (CNS) A4 specification (210X297 mm) -64-I ------ 1- ---------.- IT ------ Line · (Please read the precautions on the back first and then this page) 4017S3 A7 B7 V. Description of the invention (62) The reverse circuits are all examples of M20 Proceed in the same way. The plating mask is formed on the substrate to be mounted with the semiconductor wafer portion, the adhesive pad portion, the bead pad portion, and the outer surface of the lower surface (reverse side) of the heat sink. The plating portion is made of nickel and gold, and the copper plate is used. The substrate of the laminated sheet part on the convex part is removed by a milling cutter to complete the printed circuit board. Then, the semiconductor wafer is adhered and connected, and the obtained aggregate M resin is encapsulated to form a semiconductor package. In the same manner as in Example 21 of the semiconductor package system M, K beads were connected to a motherboard printed circuit board. The semiconductor plastic package was evaluated and Table 10 shows the results. ml- mu nn -vl ^ — · ^ n · HI ml ml nn (Please read the precautions on the back before this page), βτ Printed by the Central Laboratories of the Ministry of Economy (CNS) Α4 specifications (210X297 mm) -65 _

7 B 五、發明説明（S3) 經濟部中央標準局貝工消費合作社印製 表 10 實例2] 實例22 吸水後之 耐熱性① 尋常狀態 未故障 未故障 24小時 未故障 未故障 48小時 未故障 未故障 72小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 144小時 未故障 未故障 168小時 未故障 未故障 吸水後之 耐熱性② 尋常狀態 未故障 未故障 24小時 未故障 未故障 48小時 未故陣 未故障 72小時 未故障 未故障 96小時 未故障 未故障 120小時 未故障 未故障 14 4小時 未故障 部分剝離 168小時 未故障 部分剝離 Tg (t：) 234 - 壓力鍋試 驗後之絕‘ 緣電阻 (Ω ) 尋常狀態 3 X 10 14 - 200小時 5 X 10 12 500小時 5 X 1011 700小時 8 X 10 10 10 0 0小時 4 X 10 10 遷移電阻 (Ω ) 尋常狀態 5 X 10 13 200小時 4X 1011 500小時 5X 1011 700小時 9 X 10 10 1000小時 8 X 10 10 散熱率 (V ) 30 31 溫度週期 100週期 未故障 未故障 測試 300週期 未故障 未故障 500遇期 未故障 部分剝離 Tg =玻璃化溫度 本紙張尺度逋用中國國家梂準（CNS ) Μ規格（210X297公釐） 66 五、發明説明（64) 實 例23 清漆 Α係Μ實较 _ 1之相 同方式製備。清 漆A用if >浸漬厚100 U m坡璃織物， 及浸湏妥之織物乾燥獲得厚140 w ffl之半固 化 預浸 物 (預浸物B7) * 具有膠凝時間於 1 7 0 1C 各5 0秒及樹 脂 流動 性 於 1 7 0 Ό 於 2 0 k gf/cm2歷5分鐘 為1 0和in 。又也製備 厚 126 t ID 之 預 浸 物C3， 其具有膠凝時間 7秒及樹脂流動性 為 9 6 w m 0 提供 10 0 u m 厚 合金片 ，含 Cu:99.9wU » F e ： 0 .07wtS!及 P : 〇. 03 wtS；其構成内層，液體抗蝕劑施用於合金片之上及下 表 面而 形 成 厚 25 之塗層，及乾燥塗層。然後於反面留 下 13 X 13 am 見 方 尺寸之 抗蝕劑而其位於 具50 X 5 0 ia π見方尺 寸 之封 装 體 中 央 ;及於 反面，抗蝕劑係 留於餘 隙孔部Μ外 之 全表 面 上 0 具 有13 X 13mm見方尺寸及 高1 2 0 /』 t 1Η之餘隙孔 藉 蝕刻 兩 邊 形 成 於表面 中央。金靥片全 表面經 處理而形成 黑 色氧 化 铜 製 備妥之 C3具有一孔略大 於金屬 凸部，此孔 係 藉衝 孔 製 成 9 預浸物 C3置於正面上， 前述預 浸物B7置於 反 面上 厚 12 U B之電解銅箔置於外側 所得集合於200.°C 於 20kg f / c m 2 歷 2小時層叠成形而填補餘隙孔部之樹脂而 使 其整 合 一 體 0 於通 孔 部 於 中央鑽 孔直徑0.25mm之 通孔， 使其不接觸 金 靥芯 * 及 又 於 反面使 用二氧化碳雷射 製作直 徑1 2 0 w m之 6 2 5個孔使孔達到金靨芯。進行電漿表面處理及脫去污潰 處 理， 然 後 進 行 鍍銅， 通孔部鍍銅。又 反面之 全部通孔也 經 鍍Μ 銅 填 補 〇 然後電 路形成於正反面 上，鍍 敷阻罩覆蓋 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -67 - 401723 A7 B7 五、發明説明（65) 於半導體晶片安裝部及表面黏合墊部及反面珠墊部Μ外部 分，此等部分鍍鎳及金而獲得印刷電路板。具13Χ 13m®見 方尺寸之半導體晶片以銀糊黏合及固定至正面之金屬凸部 ，進行接線，然後所得集合藉轉移壓塑以含矽氧環氧樹脂 密封化合物包囊，焊珠附接於獲得半専體封裝體（圖10)。 半導體封裝體藉熔化焊珠連接至環氧樹脂母板印刷電路板 。半導體塑膠封裝體經評估，表11顯示其结果。 (請先閲讀背面之注意事項再填寫本頁) - 、言 經濟部中央標準局貝工消費合作社印裝 68 本紙張尺度通用中國國家標準（CNS ) A4規格（210X 297公釐） 五、發明説明（66) A7 B7 經濟却中央標準局員工消費合作社印製 表1 1 實 例 23 吸 水 後 之 尋常狀態 未 故 障 耐 熱 性 ① 2 4小時 未 故 障 4 8小時 未 故 障 72小時 未 故 障 96小時 未 故 障 120小時 未 故 障 144小時 未 故 障 168小時 未 故 障 吸 水 後 之 尋常狀態 未 故 障 耐 熱 性 ② 24小時 未 故 障 48小時 未 故 障 72小時 未 故 障 96小時 未 故 障 120小時 未 故 障 144小時 未 故 障 168小時 部 分 剝離 Tg (V ) 234 散 熱 率 (V ) 32 Tg:玻璃化溫度 ----^--^----j------訂------嚷. ys% (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） 697 B V. Description of the invention (S3) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. Table 10 Example 2] Example 22 Heat resistance after water absorption 72 hours without failure, 96 hours without failure, 120 hours without failure, 144 hours without failure, 168 hours without failure, 168 hours without failure, heat resistance after water absorption, ② normal condition, without failure, 24 hours without failure, 48 Hours without failure 72 hours without failure 96 hours without failure 96 hours without failure 120 hours without failure 14 4 hours without failure 168 hours without failure Tg (t :) 234-absolutely after the pressure cooker test ' Edge resistance (Ω) Normal state 3 X 10 14-200 hours 5 X 10 12 500 hours 5 X 1011 700 hours 8 X 10 10 10 0 0 hours 4 X 10 10 Migration resistance (Ω) Normal state 5 X 10 13 200 hours 4X 1011 500 hours 5X 1011 700 hours 9 X 10 10 1000 hours 8 X 10 10 Heat dissipation (V) 30 31 Temperature 100 cycles without failure, no failure test, 300 cycles without failure, no failure, 500 times without failure, partial peeling, Tg = glass transition temperature, paper size, using China National Standards (CNS), M specifications (210X297 mm), 66. Description of the invention (64) Example 23 Varnish A was prepared in the same manner as -1. For varnish A, impregnate 100 U m slope glass fabric and dry the impregnated fabric to obtain a semi-cured prepreg (prepreg B7) with a thickness of 140 w ffl * with gel time at 1 7 0 1C each 50 seconds and the resin fluidity at 1 70 Ό at 20 k gf / cm2 for 5 minutes were 10 and in. A prepreg C3 with a thickness of 126 t ID was also prepared, which had a gel time of 7 seconds and a resin flowability of 9 6 wm 0 and a 10 0 um thick alloy sheet, containing Cu: 99.9wU »F e: 0.07wtS! And P: 0.03 wtS; it constitutes an inner layer, a liquid resist is applied to the upper and lower surfaces of the alloy sheet to form a coating with a thickness of 25, and a dry coating. Then leave a resist of 13 X 13 am square size on the reverse side and it is located in the center of the package with a size of 50 X 50 0 ia π square; and on the reverse side, the resist is left on the entire surface of the clearance hole M The upper 0 has a 13 × 13mm square size and a clearance hole of 1 2 0 / ′ t 1 』is formed at the center of the surface by etching both sides. The entire surface of the gold tincture is treated to form black copper oxide. The prepared C3 has a hole slightly larger than the metal protrusion. This hole is made by punching. 9 Prepreg C3 is placed on the front, and the aforementioned prepreg B7 is placed. The electrolytic copper foil with a thickness of 12 UB on the reverse side is collected outside at 200. ° C at 20 kg f / cm 2 and laminated for 2 hours to fill the gap of the resin in the gap and integrate it. 0 At the center of the through hole Drill a through hole with a diameter of 0.25mm so that it does not touch the gold core * and use carbon dioxide laser on the reverse side to make 6 2 5 holes with a diameter of 120 wm to make the hole reach the gold core. Plasma surface treatment and decontamination treatment are performed, and then copper plating is performed, and the through-hole portion is copper-plated. All the through holes on the reverse side are also filled with Μ copper plating, and then the circuit is formed on the front and back sides, and the plating is covered by a mask (please read the precautions on the back before filling this page). The paper size applies to Chinese National Standard (CNS) A4 Specifications (210X297 mm) -67-401723 A7 B7 V. Description of the invention (65) The semiconductor wafer mounting part, the surface bonding pad part and the back bead pad part M, these parts are plated with nickel and gold to obtain a printed circuit board . A semiconductor wafer with a size of 13 × 13m® is bonded with silver paste and fixed to the front metal bumps for wiring. The resulting assembly is then encapsulated by transfer compression molding with a silicone-containing epoxy resin sealing compound. Half-carcass package (Figure 10). The semiconductor package is connected to the epoxy mother board printed circuit board by melting solder beads. The semiconductor plastic package was evaluated, and Table 11 shows the results. (Please read the precautions on the back before filling out this page)-， Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Bayer Consumer Cooperatives 68 This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X 297 mm) 5. Description of the invention (66) A7 B7 Economical but printed by the Central Standards Bureau's Consumer Cooperatives 1 1 Example 23 Normal state after water absorption without failure Heat resistance ① 2 4 hours without failure 4 8 hours without failure 72 hours without failure 96 hours without failure 120 hours 144 hours without failure, 168 hours without failure, normal condition after absorbing water without failure, heat resistance ② 24 hours without failure, 48 hours without failure, 72 hours without failure, 96 hours without failure, 120 hours without failure, 144 hours without failure, 168 hours, partial peeling Tg ( V) 234 Heat dissipation rate (V) 32 Tg: Glass transition temperature ---- ^-^ ---- j ------ Order ------ 嚷. Ys% (Please read the Please fill in this page for the matters needing attention) This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) 6 9

Claims (1)

401723 C8 D8 經濟部中央標準局貝工消費合作社印製 六、申請專利範圍 1 1 . 一 種 半 導 體 塑 膠 封 裝 體 其 構 造 方 式 係 經 由 將 一 半 専 1 I 體 晶 Η 固 定 於 一 印 刷 電 路 板 — 面 上 藉 接 線 連 結 — 半 導 體 1 1 電 路 導 體 至 形 成 於 其 附 近 之 印 刷 電 路 板 表 面 之 信 號 傳 播 電 S 請 先 1 1 路 導 體 至 少 Μ 一 通 孔 導 體 連 结 於 印 刷 電 路 板 表 面 上 之 信 閲 S 背 之 Ί 號 傳 播 電 路 導 體 至 成 形 於 印 刷 電 路 板 另 一 面 上 之 信 號 傳 播 »! 注 1 電 路 導 髖 或 焊 珠 之 連 结 導 體 墊 9 及 樹 脂 包 囊 半 等 體 晶 Η 拳 1 項 I > 再 ϊ 該 印 刷 電 路 板 具 有 一 金 屬 片 其 大 小 幾 乎 等 於 印 刷 電 路 板 本 頁 裝 1 大 小 接 近 位 於 印 刷 電 路 板 厚 度 方 向 中 央 金 羼 片 係 Μ 耐 熱 1 1 樹 脂 組 合 物 與 正 面 及 反 面 電 路 導 體 絕 緣 金 騸 片 設 置 一 餘 1 1 隙 孔 其 直 徑 係 大 於 至 少 二 通 孔 個 別 之 直 徑 通 孔 係 設 置 於 1 訂 餘 隙 孔 内 通 孔 係 Μ 樹 脂 組 合 物 與 金 屬 片 絕 緣 至 少 —· 通 1 孔 係 連 结 至 金 羼 片 金 羼 片 一 面 設 置 至 少 一 凸 部 其 大 小 1 1 等 於 半 導 體 晶 片 大 小 且 暴 露 於 一 面 上 半 導 體 晶 片 係 固 定 1 1 於 凸 部 上 0 1 浓 2 . 如 甲 請專利範圍第1項之半導體塑膠封裝體 >其中該 1 y} 凸 部 具 有 直 徑 或 邊 長 係 大 於 半 導 體 晶 片 直徑達40至90¾ 1 3 . 如 申 請專利範圍第2項之半等體塑膠封裝體 >其中位 1 1 於 半 導 體 晶 片 下 方 之 一 通 孔 導 體 係 Μ 可 熱 固 化 抗 蝕 劑 或 光 1 1 選 擇 性 熱 固 抗 蝕 劑 與 黏 合 半 導 體 晶 片 之 導 熱 黏 合 劑 隔 開 0 1 I 4. 如 甲 請 專 利 範 圍 第 1項之半導體塑膠封裝體 |其中該 Ί | 餘 隙 孔 具 有 開 m 形 式 9 其 寬 度 係 大 於 通 孔 直 徑 〇 1 5 . 如 請 專 利 範 圃 第 1項之半導體塑膠封裝體 ，其中於 1 1 印 刷 電 路 板 表 面 之 信 號 傳 播 電 路 専 體 係 Μ 通 孔 導 體 經 由 成 1 1 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） -1 - 經濟部中央標準局属工消费合作社印製 A8 B8 C8 D8 六、申請專利範圍 形於印刷電路板表面該側之専電盲通孔而連接至另一面之 信號傳播電路導體或焊珠之連接導體墊。 6. 如申請專利範圍第5項之半導體塑膠封裝體，其中該 信號傳播電路導體至少具有三種。 7. 如申請專利範圍第1項之半導體塑膠封裝體，其中該 金屬Η及電路之金靥為具有銅含量至少95¾之合金或純銅。 8. 如申請專利範圍第1項之半導體塑膠封装體，其中該 耐熱樹脂組合物為含多官能氰酸酷之熱固樹脂組合物或K 氰酸酯作為主要成分之預聚物。 9. 一種半導體塑膠封裝體，其構造方式係經由將一半導 體晶片固定於一印刷電路板一面上》藉接線連结一半導體 電路専體至形成於其附近之印刷電路板表面之信號傳播電 路導體，至少Μ —通孔導體連結於印刷電路板表面上之信 號傳播電路導體至成形於印刷電路板另一面上之信號傳播 電路専體或焊珠之連结導體墊，及以樹脂包囊半導體晶片 9 該印刷電路板具有一金屬片其大小幾乎等於印刷電路板 大小接近位於印刷電路板厚度方向中央，金羼Η係Μ耐熱 樹脂組合物與正面及反面電路導體絕緣，金屬板設置一餘 隙孔其直徑係大於至少二通孔個別之直徑，通孔係設置於 餘隙孔内，通孔係Μ樹脂組合物與金鼷片絕緣，至少一通 孔係連结至金靥片，金羼片一面設置至少一凸部，其大小 等於半導體晶片大小且暴露於一面上，半導體晶片係固定 於凸部上，金屬Η之另一面設置一凸面暴露用於散熱。 本紙張尺度逍用中國國家揉準（CN*S ) Α4規格（210Χ297公釐） 2 (請先閱讀背面之注意事項再填寫本頁) .袭_ 訂 六、申請專利範圍 10. 如申請專利範圍第9項之半導體塑膠封裝體，其中該 凸部具有直徑或邊長係大於半導體晶片直徑達40至90¾。 11. 如申請專利範圍第10項之半導體塑膠封裝體，其中 該信號傳播電路導體至少有三層。 12. 如申請專利範圍第9項之半導體塑膠封装體，其中該 金屬片具有一部分係對應於印刷電路板緣部之部分或全體 ，且係暴露於印刷電路板表面及另一面上或位於另一面上。 13. 如申請專利範圍第9項之半導體塑膠封裝體，其中該 餘隙孔具有開鏠形式，該開鏠之寬度係大於通孔直徑。 14. 一種生產用於半導體塑膠封裝體之雙邊鍍金靥箔層 合物之方法，該封装體之構造方式係將一片接近與印刷板 電路板相同大小的金靥片設置於印刷電路板厚度方向中央 經濟部中央標準局属工消费合作社印製 (請先閱讀背面之注意事項再填寫本頁) ，提供幾乎與半導體晶片相等大小之至少一暴露金靥片凸 部於印刷電路板一面上，固定半導體晶片於其上，藉接線 連结半導體晶片至成形於其附近之印刷電路板表面上之信 號傳播電路導體，至少Μ —通孔導體連結於印刷電路板表 面上之信號傳播電路導體至形成於印刷電路另一面上之信 號傳播電路導體或焊珠連结導體墊，及以樹脂包囊半導體 晶片， 該方法包含下列步驟 (1) 形成一凸部於金屬片之一面上用於安裝半導體晶片 ，及形成一餘隙孔其具有直徑大於通孔直徑或一開鏠其小 邊係大於通孔直徑用於提供傳導正及反電路導體之通孔， (2) 設置一含有一孔之低流動性或非流動性預浸物片或 本紙張尺度逋用中國國家梂準（CNS ) Α4規格（210X297公釐） -3 -401723 C8 D8 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 6. Scope of patent application 1 1. A semiconductor plastic package is constructed by fixing half of the I1 I body crystalΗ on a printed circuit board—borrowed on the surface Wiring connection—Semiconductor 1 1 The signal transmission signal S from the circuit conductor to the surface of the printed circuit board formed in the vicinity. Please connect at least 1 1 conductor at least one through-hole conductor to the letter S on the surface of the printed circuit board. Signal propagation from the conductor of the circuit to the other side of the printed circuit board »! Note 1 Connection conductor pads for circuit leads or solder beads 9 and resin-encapsulated semi-isomeric crystals Η Boxing 1 I > reϊ ϊ The circuit board has a metal sheet whose size is almost equal to the printed circuit board. The central gold plate in the thickness direction of the circuit board is M. Heat-resistant 1 1 The resin composition is provided with the front and back circuit conductor insulating gold plates. The gap is larger than at least two through holes. The individual diameter of the through holes is set at 1. The through-holes in the clearance gap M resin composition is at least insulated from the metal sheet. The through-holes are connected to the gold chip. The gold chip has at least one convex portion on one side, the size of which is 1 1 equal to the size of the semiconductor wafer and exposed on one side. The upper semiconductor wafer is fixed 1 1 on the convex portion 0 1 thick 2. As described in the patent application, the semiconductor plastic package of item 1 of the patent > wherein the 1 y} convex portion has a diameter or a side length greater than the semiconductor wafer diameter by 40 To 90¾ 1 3. For example, the semi-isomeric plastic package of the second item of the patent application > the bit position 1 1 is a through-hole guide system under the semiconductor wafer M heat-curable resist or light 1 1 select The thermosetting resist is separated from the thermally conductive adhesive that bonds the semiconductor wafer. 0 1 I 4. The semiconductor plastic package as described in the first item of the patent scope | wherein Ί | The clearance hole has an open m form 9 and its width is greater than The diameter of the through hole is 0 1 5. For example, please refer to the patented semiconductor plastic package No. 1 in which the signal propagation circuit on the surface of the 1 1 printed circuit board 専 system M through hole conductors are made into 1 1 Standard (CNS) A4 (210X297 mm) -1-Printed by the Industrial and Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of the patent application is formed by a blind electrical through hole on the side of the surface of the printed circuit board. To the other side of the signal transmission circuit conductor or solder ball connection conductor pad. 6. For the semiconductor plastic package of claim 5, the signal transmission circuit conductor has at least three kinds of conductors. 7. For example, the semiconductor plastic package of the scope of the patent application, wherein the metal Η and the gold 电路 of the circuit are alloys or pure copper with a copper content of at least 95¾. 8. The semiconductor plastic package according to item 1 of the patent application scope, wherein the heat-resistant resin composition is a thermosetting resin composition containing a polyfunctional cyanocyanide or a prepolymer containing K cyanate as a main component. 9. A semiconductor plastic package structured by fixing a semiconductor chip on one side of a printed circuit board by a wire connecting a semiconductor circuit body to a signal propagation circuit conductor formed on the surface of a printed circuit board near the semiconductor circuit body. , At least M — a signal transmission circuit conductor connected to the surface of the printed circuit board by a through-hole conductor to a connection conductor pad of a signal transmission circuit body or solder bead formed on the other side of the printed circuit board, and the semiconductor wafer is encapsulated with a resin 9 The printed circuit board has a metal sheet whose size is almost equal to the size of the printed circuit board. It is located near the center of the thickness of the printed circuit board. The gold-based M heat-resistant resin composition is insulated from the front and back circuit conductors. The metal plate is provided with a clearance hole. Its diameter is larger than the diameter of at least two through-holes. The through-holes are arranged in the clearance holes. The through-holes M resin composition is insulated from the gold diaphragm. At least one through-hole is connected to the gold diaphragm. One side of the gold diaphragm At least one convex portion is provided, the size of which is equal to the size of the semiconductor wafer and is exposed on one side, the semiconductor wafer is fixed on the convex portion, Another genus of the surface provided with a convex surface Η exposed for heat dissipation. The size of this paper is in accordance with China's National Standard (CN * S) Α4 size (210 × 297 mm) 2 (Please read the precautions on the back before filling this page). Attack _ Order VI. Patent Application Scope 10. If patent application scope The semiconductor plastic package according to item 9, wherein the convex portion has a diameter or a side length larger than that of the semiconductor wafer by 40 to 90¾. 11. The semiconductor plastic package of claim 10, wherein the signal propagation circuit conductor has at least three layers. 12. For the semiconductor plastic package of claim 9 in which the metal sheet has a part or whole corresponding to the edge of the printed circuit board, and is exposed on the surface of the printed circuit board and on the other side or on the other side on. 13. For the semiconductor plastic package according to item 9 of the patent application, wherein the clearance hole has a slit, and the width of the slit is larger than the diameter of the through hole. 14. A method for producing a double-sided gold-plated rhenium foil laminate for a semiconductor plastic package. The package is constructed by placing a gold iris sheet approximately the same size as a printed circuit board in the center of the thickness of the printed circuit board. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, which is an industrial and consumer cooperative (please read the precautions on the back before filling out this page), and provide at least one exposed gold ridge protrusion of approximately the same size as the semiconductor wafer on the side of the printed circuit board to fix the semiconductor The wafer is connected to the signal transmission circuit conductor on the surface of the printed circuit board formed by the semiconductor wafer by wiring, and at least M—the through-hole conductor is connected to the signal transmission circuit conductor on the surface of the printed circuit board to be formed on the printed circuit board. A signal transmission circuit conductor or solder bead connecting conductor pad on the other side of the circuit, and encapsulating the semiconductor wafer with a resin, the method includes the following steps (1) forming a convex portion on one side of the metal sheet for mounting the semiconductor wafer, and Form a clearance hole with a diameter larger than the diameter of the through hole or an opening whose small side is larger than the diameter of the through hole To provide through holes for conducting positive and negative circuit conductors, (2) Set a low-flow or non-flowable prepreg sheet containing a hole or this paper size, using China National Standard (CNS) A4 size (210X297) Centimeters) -3-
TW87120501A 1997-12-10 1998-12-10 Semiconductor plastic package and process for the production thereof TW401723B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP9340129A JPH11176973A (en) 1997-12-10 1997-12-10 Semiconductor plastic package
JP10000975A JPH11195745A (en) 1998-01-06 1998-01-06 Multi-chip plastic package
JP00398498A JP3852510B2 (en) 1998-01-12 1998-01-12 Semiconductor plastic package
JP10004835A JPH11204685A (en) 1998-01-13 1998-01-13 Semiconductor plastic package
JP10004836A JPH11204686A (en) 1998-01-13 1998-01-13 Semiconductor plastic package

Publications (1)

Publication Number Publication Date
TW401723B true TW401723B (en) 2000-08-11

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TW87120501A TW401723B (en) 1997-12-10 1998-12-10 Semiconductor plastic package and process for the production thereof

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TW (1) TW401723B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692846B (en) * 2019-03-21 2020-05-01 旭德科技股份有限公司 Heat dissipation substrate and fabricating method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692846B (en) * 2019-03-21 2020-05-01 旭德科技股份有限公司 Heat dissipation substrate and fabricating method thereof
US10957614B2 (en) 2019-03-21 2021-03-23 Subtron Technology Co., Ltd. Heat dissipation substrate and fabricating method thereof

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