TW373262B - Method for cleaning metal film stuck inside film treating device - Google Patents

Method for cleaning metal film stuck inside film treating device

Info

Publication number
TW373262B
TW373262B TW087106605A TW87106605A TW373262B TW 373262 B TW373262 B TW 373262B TW 087106605 A TW087106605 A TW 087106605A TW 87106605 A TW87106605 A TW 87106605A TW 373262 B TW373262 B TW 373262B
Authority
TW
Taiwan
Prior art keywords
film
treating device
cleaning
oxidizing
metal film
Prior art date
Application number
TW087106605A
Other languages
English (en)
Inventor
Tomoaki Koide
Akiko Kobayashi
Sang-Tae Ko
Atsushi Sekiguchi
Osamu Okada
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Application granted granted Critical
Publication of TW373262B publication Critical patent/TW373262B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
TW087106605A 1997-11-06 1998-04-29 Method for cleaning metal film stuck inside film treating device TW373262B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32042997A JP4049423B2 (ja) 1997-11-06 1997-11-06 成膜処理装置内の付着金属膜のクリーニング方法

Publications (1)

Publication Number Publication Date
TW373262B true TW373262B (en) 1999-11-01

Family

ID=18121358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087106605A TW373262B (en) 1997-11-06 1998-04-29 Method for cleaning metal film stuck inside film treating device

Country Status (3)

Country Link
JP (1) JP4049423B2 (zh)
KR (1) KR100327282B1 (zh)
TW (1) TW373262B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725194B (zh) * 2016-07-26 2021-04-21 日商中央硝子股份有限公司 蝕刻方法及蝕刻裝置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284052B2 (en) * 1998-08-19 2001-09-04 Sharp Laboratories Of America, Inc. In-situ method of cleaning a metal-organic chemical vapor deposition chamber
JP2000345346A (ja) * 1999-05-31 2000-12-12 Japan Pionics Co Ltd 気化供給装置及び半導体製造装置の洗浄方法
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
JP4663059B2 (ja) 2000-03-10 2011-03-30 東京エレクトロン株式会社 処理装置のクリーニング方法
US6534413B1 (en) * 2000-10-27 2003-03-18 Air Products And Chemicals, Inc. Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch
JP3527231B2 (ja) * 2002-07-05 2004-05-17 東京エレクトロン株式会社 基板処理装置のクリーニング方法
US7383841B2 (en) * 2002-07-05 2008-06-10 Tokyo Electron Limited Method of cleaning substrate-processing device and substrate-processing device
US20040014327A1 (en) * 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP4234135B2 (ja) * 2003-02-13 2009-03-04 東京エレクトロン株式会社 基板処理装置のクリーニング方法
US8298336B2 (en) 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
JP5481547B2 (ja) * 2006-08-24 2014-04-23 富士通セミコンダクター株式会社 金属付着物の除去方法、基板処理装置、および記録媒体
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
JP2011035119A (ja) * 2009-07-31 2011-02-17 Tokyo Electron Ltd 基板洗浄装置及び基板洗浄方法
JP5646190B2 (ja) * 2010-03-12 2014-12-24 東京エレクトロン株式会社 洗浄方法及び処理装置
JP5707144B2 (ja) * 2011-01-18 2015-04-22 東京エレクトロン株式会社 基板処理装置のドライクリーニング方法及び金属膜の除去方法
JP5929386B2 (ja) 2012-03-22 2016-06-08 セントラル硝子株式会社 成膜装置内の金属膜のドライクリーニング方法
JP6142676B2 (ja) 2013-05-31 2017-06-07 セントラル硝子株式会社 ドライエッチング方法、ドライエッチング装置、金属膜及びそれを備えたデバイス
JP6087236B2 (ja) * 2013-07-24 2017-03-01 東京エレクトロン株式会社 成膜方法
JP7379993B2 (ja) * 2019-09-20 2023-11-15 東京エレクトロン株式会社 エッチング装置及びエッチング方法
WO2022080288A1 (ja) * 2020-10-16 2022-04-21 セントラル硝子株式会社 ウェットエッチング方法
CN114618852B (zh) * 2022-05-17 2022-08-16 江苏浦贝智能科技有限公司 一种半导体加工用除胶机及除胶方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725194B (zh) * 2016-07-26 2021-04-21 日商中央硝子股份有限公司 蝕刻方法及蝕刻裝置
US11282714B2 (en) 2016-07-26 2022-03-22 Central Glass Company, Limited Etching method and etching device

Also Published As

Publication number Publication date
KR100327282B1 (ko) 2002-04-17
JPH11140652A (ja) 1999-05-25
JP4049423B2 (ja) 2008-02-20
KR19990044727A (ko) 1999-06-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees