TW373233B - Furnace sidewall temperature control system - Google Patents
Furnace sidewall temperature control systemInfo
- Publication number
- TW373233B TW373233B TW087109341A TW87109341A TW373233B TW 373233 B TW373233 B TW 373233B TW 087109341 A TW087109341 A TW 087109341A TW 87109341 A TW87109341 A TW 87109341A TW 373233 B TW373233 B TW 373233B
- Authority
- TW
- Taiwan
- Prior art keywords
- heating elements
- chamber
- temperature control
- longitudinal axis
- vertical
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Control Of Temperature (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/873,351 US5900177A (en) | 1997-06-11 | 1997-06-11 | Furnace sidewall temperature control system |
Publications (1)
Publication Number | Publication Date |
---|---|
TW373233B true TW373233B (en) | 1999-11-01 |
Family
ID=25361468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087109341A TW373233B (en) | 1997-06-11 | 1998-06-11 | Furnace sidewall temperature control system |
Country Status (7)
Country | Link |
---|---|
US (1) | US5900177A (zh) |
EP (1) | EP0884406B1 (zh) |
JP (1) | JPH1115537A (zh) |
KR (1) | KR100424056B1 (zh) |
CN (1) | CN1135905C (zh) |
DE (1) | DE69816913T2 (zh) |
TW (1) | TW373233B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI746938B (zh) * | 2018-03-08 | 2021-11-21 | 美商瓦特洛威電子製造公司 | 用以控制加熱器之控制系統 |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121579A (en) * | 1996-02-28 | 2000-09-19 | Tokyo Electron Limited | Heating apparatus, and processing apparatus |
JP2002515648A (ja) * | 1998-05-11 | 2002-05-28 | セミトゥール・インコーポレイテッド | 加熱反応炉の温度制御システム |
US6005230A (en) * | 1998-09-28 | 1999-12-21 | White, Jr.; R. Thomas | Radiant heater for analytical laboratory use with precision energy control, non contamination exterior and uniform radiation footprint |
US6242720B1 (en) * | 1998-12-23 | 2001-06-05 | Carrier Corporation | Control for electric water heater |
US6114671A (en) * | 1999-07-22 | 2000-09-05 | Trw Inc. | System for and method of controlling the temperature of an object using temperature control elements spaced from the object |
JP3450240B2 (ja) * | 1999-11-25 | 2003-09-22 | Necエレクトロニクス株式会社 | ランプアニール装置とランプアニール装置の処理温度制御方法 |
US6452196B1 (en) | 1999-12-20 | 2002-09-17 | Axcelis Technologies, Inc. | Power supply hardening for ion beam systems |
US6492625B1 (en) * | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
US6610968B1 (en) * | 2000-09-27 | 2003-08-26 | Axcelis Technologies | System and method for controlling movement of a workpiece in a thermal processing system |
US6435866B1 (en) * | 2001-02-16 | 2002-08-20 | Delphi Technologies, Inc. | Radiation furnace with independently controlled heating elements |
US6753506B2 (en) * | 2001-08-23 | 2004-06-22 | Axcelis Technologies | System and method of fast ambient switching for rapid thermal processing |
JP2003074468A (ja) * | 2001-08-31 | 2003-03-12 | Toshiba Corp | 真空排気システム及びその監視・制御方法 |
WO2003038384A1 (fr) * | 2001-10-30 | 2003-05-08 | Matsushita Electric Industrial Co., Ltd. | Procede de mesure de temperature, procede de traitement thermique et procede de fabrication de dispositif a semi-conducteur |
EP1522090A4 (en) * | 2002-07-15 | 2006-04-05 | Aviza Tech Inc | THERMAL PROCESSING SYSTEM AND CONFIGURABLE VERTICAL CHAMBER |
US20060083495A1 (en) * | 2002-07-15 | 2006-04-20 | Qiu Taiquing | Variable heater element for low to high temperature ranges |
US6695886B1 (en) * | 2002-08-22 | 2004-02-24 | Axcelis Technologies, Inc. | Optical path improvement, focus length change compensation, and stray light reduction for temperature measurement system of RTP tool |
US6768084B2 (en) | 2002-09-30 | 2004-07-27 | Axcelis Technologies, Inc. | Advanced rapid thermal processing (RTP) using a linearly-moving heating assembly with an axisymmetric and radially-tunable thermal radiation profile |
US20050110292A1 (en) * | 2002-11-26 | 2005-05-26 | Axcelis Technologies, Inc. | Ceramic end effector for micro circuit manufacturing |
US7070661B2 (en) * | 2003-08-22 | 2006-07-04 | Axcelis Technologies, Inc. | Uniform gas cushion wafer support |
US7026581B2 (en) * | 2003-08-22 | 2006-04-11 | Axcelis Technologies, Inc. | Apparatus for positioning an elevator tube |
US6855916B1 (en) * | 2003-12-10 | 2005-02-15 | Axcelis Technologies, Inc. | Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling |
US7100759B2 (en) * | 2004-08-09 | 2006-09-05 | Axcelis Technologies, Inc. | Magnetic support structure for an elevator tube of a vertical rapid thermal processing unit |
JP2006113724A (ja) * | 2004-10-13 | 2006-04-27 | Omron Corp | 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体 |
US7205231B2 (en) * | 2004-10-29 | 2007-04-17 | Axcelis Technologies, Inc. | Method for in-situ uniformity optimization in a rapid thermal processing system |
CN100458631C (zh) * | 2005-03-25 | 2009-02-04 | 深圳斯贝克动力电子有限公司 | 发热元件的温度控制方法和装置 |
US20070039938A1 (en) * | 2005-08-19 | 2007-02-22 | Peck Kevin B | Fault tolerant element and combination with fault tolerant circuit |
US7976634B2 (en) * | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
US20090197424A1 (en) * | 2008-01-31 | 2009-08-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
RU2454699C1 (ru) * | 2011-02-28 | 2012-06-27 | Общество с ограниченной ответственностью "Научно-производственная фирма "Мета-хром" | Термостат |
JP5766647B2 (ja) * | 2012-03-28 | 2015-08-19 | 東京エレクトロン株式会社 | 熱処理システム、熱処理方法、及び、プログラム |
US10541183B2 (en) * | 2012-07-19 | 2020-01-21 | Texas Instruments Incorporated | Spectral reflectometry window heater |
CN103851912B (zh) | 2012-12-05 | 2017-09-08 | 弗卢克公司 | 具有可重新配置的加热器电路的高温炉 |
CN104419910B (zh) * | 2013-09-05 | 2017-01-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室及等离子体加工设备 |
EP3222332A1 (en) * | 2016-03-24 | 2017-09-27 | Hocoma AG | Suspension device for balancing a weight |
CN107868942B (zh) * | 2016-09-27 | 2019-11-29 | 北京北方华创微电子装备有限公司 | 一种去气腔室及其去气方法和半导体处理设备 |
US10741426B2 (en) * | 2017-09-27 | 2020-08-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling temperature of furnace in semiconductor fabrication process |
US10998205B2 (en) * | 2018-09-14 | 2021-05-04 | Kokusai Electric Corporation | Substrate processing apparatus and manufacturing method of semiconductor device |
CN111997595A (zh) * | 2020-08-06 | 2020-11-27 | 中国科学院广州能源研究所 | 一种天然气水合物地质分层装置和方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2266002A (en) * | 1940-06-10 | 1941-12-16 | Clarkiron Inc | Electric furnace |
US2462202A (en) * | 1944-01-29 | 1949-02-22 | Selas Corp Of America | Heat treating |
US2668701A (en) * | 1951-02-03 | 1954-02-09 | Selas Corp Of America | Heating control system |
FR1520640A (fr) * | 1967-02-28 | 1968-04-12 | Onera (Off Nat Aerospatiale) | Procédé et appareil pour la fabrication de poudre de chrome |
US4195820A (en) * | 1978-04-10 | 1980-04-01 | Pyreflex Corporation | Precise thermal processing apparatus |
US4711989A (en) * | 1986-05-19 | 1987-12-08 | Thermco Systems, Inc. | Diffusion furnace multizone temperature control |
EP0306967B1 (en) * | 1987-09-11 | 1997-04-16 | Hitachi, Ltd. | Apparatus for performing heat treatment on semiconductor wafers |
KR890008922A (ko) * | 1987-11-21 | 1989-07-13 | 후세 노보루 | 열처리 장치 |
US4857689A (en) * | 1988-03-23 | 1989-08-15 | High Temperature Engineering Corporation | Rapid thermal furnace for semiconductor processing |
JPH01252886A (ja) * | 1988-03-31 | 1989-10-09 | Central Glass Co Ltd | 熱加工炉並びにそれによる熱処理方法 |
JP2947604B2 (ja) * | 1990-09-28 | 1999-09-13 | 東京エレクトロン株式会社 | 熱処理炉 |
JPH0690126B2 (ja) * | 1990-10-30 | 1994-11-14 | 株式会社島津製作所 | キャピラリレオメータおよび温度検査棒 |
US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
US5387557A (en) * | 1991-10-23 | 1995-02-07 | F. T. L. Co., Ltd. | Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones |
JP3174379B2 (ja) * | 1992-02-03 | 2001-06-11 | 東京エレクトロン株式会社 | 加熱装置 |
JP3230836B2 (ja) * | 1992-04-09 | 2001-11-19 | 東京エレクトロン株式会社 | 熱処理装置 |
JP3121915B2 (ja) * | 1992-06-01 | 2001-01-09 | 東京エレクトロン株式会社 | 封止装置 |
US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
US5616264A (en) * | 1993-06-15 | 1997-04-01 | Tokyo Electron Limited | Method and apparatus for controlling temperature in rapid heat treatment system |
KR950001953A (ko) * | 1993-06-30 | 1995-01-04 | 이노우에 아키라 | 웨이퍼의 열처리방법 |
US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
GB2298314A (en) * | 1994-08-12 | 1996-08-28 | Samsung Electronics Co Ltd | Apparatus for rapid thermal processing |
-
1997
- 1997-06-11 US US08/873,351 patent/US5900177A/en not_active Expired - Lifetime
-
1998
- 1998-06-02 DE DE69816913T patent/DE69816913T2/de not_active Expired - Fee Related
- 1998-06-02 EP EP98304348A patent/EP0884406B1/en not_active Expired - Lifetime
- 1998-06-04 JP JP10155789A patent/JPH1115537A/ja active Pending
- 1998-06-08 KR KR10-1998-0021093A patent/KR100424056B1/ko not_active IP Right Cessation
- 1998-06-11 TW TW087109341A patent/TW373233B/zh not_active IP Right Cessation
- 1998-06-11 CN CNB981027881A patent/CN1135905C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI746938B (zh) * | 2018-03-08 | 2021-11-21 | 美商瓦特洛威電子製造公司 | 用以控制加熱器之控制系統 |
US11558933B2 (en) | 2018-03-08 | 2023-01-17 | Watlow Electric Manufacturing Company | Control system for controlling a heater |
Also Published As
Publication number | Publication date |
---|---|
DE69816913T2 (de) | 2004-07-15 |
CN1204938A (zh) | 1999-01-13 |
CN1135905C (zh) | 2004-01-21 |
KR100424056B1 (ko) | 2004-06-23 |
JPH1115537A (ja) | 1999-01-22 |
EP0884406B1 (en) | 2003-08-06 |
US5900177A (en) | 1999-05-04 |
EP0884406A1 (en) | 1998-12-16 |
DE69816913D1 (de) | 2003-09-11 |
KR19990006758A (ko) | 1999-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |