TW366491B - Semiconductor IC and the microcomputer - Google Patents
Semiconductor IC and the microcomputerInfo
- Publication number
- TW366491B TW366491B TW086119778A TW86119778A TW366491B TW 366491 B TW366491 B TW 366491B TW 086119778 A TW086119778 A TW 086119778A TW 86119778 A TW86119778 A TW 86119778A TW 366491 B TW366491 B TW 366491B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- power supply
- microcomputer
- supply voltage
- vfixb
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Read Only Memory (AREA)
- Microcomputers (AREA)
Abstract
The present invention relates to a semiconductor IC and the microcomputer, a microcomputer with a built-in flash memory, for writing and erasing in a built-in flash memory in a wider external power supply voltage range including low-voltage actions. That is to say, to produce voltage of minimum dependence on power supply voltage (VfixB) by means of basic circuit voltage using the clamping means (44) and within the acceptable range, the voltage level being clamped as a voltage lower than the external single power supply voltage (VCC), thus, by using the surge voltage (writing in and erasing voltage) voltage surge means (45-48) working on clamping voltage (VfixB) without depending on the external power supply voltage (VCC).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01841397A JP3831040B2 (en) | 1997-01-31 | 1997-01-31 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366491B true TW366491B (en) | 1999-08-11 |
Family
ID=11970979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086119778A TW366491B (en) | 1997-01-31 | 1997-12-26 | Semiconductor IC and the microcomputer |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3831040B2 (en) |
KR (2) | KR100528423B1 (en) |
TW (1) | TW366491B (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100338953B1 (en) * | 1999-12-29 | 2002-05-31 | 박종섭 | High voltage generation circuit |
JP2002025272A (en) * | 2000-07-10 | 2002-01-25 | Sharp Corp | Semiconductor storage device and its evaluating method |
JP4043703B2 (en) | 2000-09-04 | 2008-02-06 | 株式会社ルネサステクノロジ | Semiconductor device, microcomputer, and flash memory |
JP2002216498A (en) * | 2001-01-18 | 2002-08-02 | Rohm Co Ltd | Ferroelectric memory device |
JP2002358795A (en) * | 2001-05-31 | 2002-12-13 | Hitachi Ltd | Non-volatile semiconductor storage device and manufacturing method |
WO2003073430A1 (en) * | 2002-02-28 | 2003-09-04 | Renesas Technology Corp. | Nonvolatile semiconductor storage device |
KR100506191B1 (en) * | 2002-07-08 | 2005-08-04 | 주식회사 하이닉스반도체 | Circuit for generating a trim bit signal in a flash memory device |
JP4118623B2 (en) * | 2002-07-23 | 2008-07-16 | 松下電器産業株式会社 | Nonvolatile semiconductor memory device |
JP4257196B2 (en) | 2003-12-25 | 2009-04-22 | 株式会社東芝 | Semiconductor device and driving method of semiconductor device |
JP2005235315A (en) | 2004-02-19 | 2005-09-02 | Elpida Memory Inc | Boosting circuit |
JP4488800B2 (en) * | 2004-06-14 | 2010-06-23 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit device |
DE102005037409A1 (en) * | 2004-08-09 | 2006-03-30 | International Rectifier Corp., El Segundo | Start-up switch to provide a start-up voltage to an application circuit |
JP4994815B2 (en) * | 2006-12-06 | 2012-08-08 | 三星電子株式会社 | Method for setting erase voltage of nonvolatile semiconductor memory device |
JP2009303317A (en) * | 2008-06-11 | 2009-12-24 | Ricoh Co Ltd | Reference voltage generating circuit and dc-dc converter with that reference voltage generating circuit |
JP2009141960A (en) * | 2008-12-03 | 2009-06-25 | Renesas Technology Corp | Semiconductor integrated circuit |
JP5596143B2 (en) | 2010-06-29 | 2014-09-24 | パナソニック株式会社 | Nonvolatile memory system, power supply circuit for memory system, flash memory, flash memory controller, and nonvolatile semiconductor memory device |
JP5385220B2 (en) | 2010-06-30 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | Nonvolatile memory, data processing apparatus, and microcomputer application system |
JP5636860B2 (en) * | 2010-10-14 | 2014-12-10 | 凸版印刷株式会社 | Semiconductor device |
JP2013211974A (en) | 2012-03-30 | 2013-10-10 | Renesas Electronics Corp | Semiconductor device for battery control, and battery pack |
KR102660729B1 (en) * | 2016-10-28 | 2024-04-26 | 삼성전자주식회사 | Nonvolatile memory device detecting power noise and operation method thereof |
CN115202425B (en) * | 2022-09-15 | 2022-11-22 | 成都市易冲半导体有限公司 | IO (input/output) design circuit and method for detecting ultra-low power supply voltage of serial communication bus |
-
1997
- 1997-01-31 JP JP01841397A patent/JP3831040B2/en not_active Expired - Fee Related
- 1997-12-26 TW TW086119778A patent/TW366491B/en not_active IP Right Cessation
-
1998
- 1998-01-22 KR KR1019980001849A patent/KR100528423B1/en not_active IP Right Cessation
-
2003
- 2003-01-17 KR KR1020030003200A patent/KR100515541B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR19980070699A (en) | 1998-10-26 |
JP3831040B2 (en) | 2006-10-11 |
KR100515541B1 (en) | 2005-09-20 |
KR100528423B1 (en) | 2006-06-22 |
JPH10214496A (en) | 1998-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |