JPS5735422A - Semiconductor circuit - Google Patents
Semiconductor circuitInfo
- Publication number
- JPS5735422A JPS5735422A JP11091280A JP11091280A JPS5735422A JP S5735422 A JPS5735422 A JP S5735422A JP 11091280 A JP11091280 A JP 11091280A JP 11091280 A JP11091280 A JP 11091280A JP S5735422 A JPS5735422 A JP S5735422A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- signal
- power supply
- diode
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
Landscapes
- Electronic Switches (AREA)
- Read Only Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To achieve a sufficiently high voltage at an output terminal, by using a diode for an element which leads a high voltage given at a signal and power supply terminal to an output terminal. CONSTITUTION:When a signal and power supply terminal (b) is used as a signal terminal, if a signal B is taken as 1, the size of each transistor can be set so that the potential at a terminal (a) can be kept near a power supply voltage Vc independently of 1.0 of a signal A. In this case, almost no current flows via a diode 31 until the diode 31 breaks down to the potential VF+ potential at terminal (a) at the terminal (b), and the terminal (b) can be used as a signal line. On the other hand, when the terminal (b) is used for the power supply, the signal B is taken as 0, a MOSFET4 is cut off, and a current from a high power supply VP to a lower power supply VC does not flow. In this case, a sufficiently higher voltage being VP-VF can be obtained at an output terminal O.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11091280A JPS5735422A (en) | 1980-08-12 | 1980-08-12 | Semiconductor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11091280A JPS5735422A (en) | 1980-08-12 | 1980-08-12 | Semiconductor circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5735422A true JPS5735422A (en) | 1982-02-26 |
JPH0311127B2 JPH0311127B2 (en) | 1991-02-15 |
Family
ID=14547782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11091280A Granted JPS5735422A (en) | 1980-08-12 | 1980-08-12 | Semiconductor circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5735422A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5954100A (en) * | 1982-08-17 | 1984-03-28 | ウエスチングハウス エレクトリック コ−ポレ−ション | Permanent type memory |
JPS6050697A (en) * | 1983-08-30 | 1985-03-20 | Toshiba Corp | Semiconductor integrated circuit |
JPS612050A (en) * | 1984-04-02 | 1986-01-08 | ザ ダウ ケミカル カンパニ− | Combination heat-quantity analyzer and x-ray diffractometer |
JPS6161295A (en) * | 1984-08-31 | 1986-03-29 | Fujitsu Ltd | Semiconductor memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5379365A (en) * | 1976-12-23 | 1978-07-13 | Nec Corp | Capacitive load driving unit |
JPS5423204A (en) * | 1977-07-21 | 1979-02-21 | Sato Yoshio | Fluid pump |
-
1980
- 1980-08-12 JP JP11091280A patent/JPS5735422A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5379365A (en) * | 1976-12-23 | 1978-07-13 | Nec Corp | Capacitive load driving unit |
JPS5423204A (en) * | 1977-07-21 | 1979-02-21 | Sato Yoshio | Fluid pump |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5954100A (en) * | 1982-08-17 | 1984-03-28 | ウエスチングハウス エレクトリック コ−ポレ−ション | Permanent type memory |
JPH0587919B2 (en) * | 1982-08-17 | 1993-12-20 | Westinghouse Electric Corp | |
JPS6050697A (en) * | 1983-08-30 | 1985-03-20 | Toshiba Corp | Semiconductor integrated circuit |
JPH0527195B2 (en) * | 1983-08-30 | 1993-04-20 | Toshiba Kk | |
JPS612050A (en) * | 1984-04-02 | 1986-01-08 | ザ ダウ ケミカル カンパニ− | Combination heat-quantity analyzer and x-ray diffractometer |
JPH0548415B2 (en) * | 1984-04-02 | 1993-07-21 | Dow Chemical Co | |
JPS6161295A (en) * | 1984-08-31 | 1986-03-29 | Fujitsu Ltd | Semiconductor memory |
JPH059880B2 (en) * | 1984-08-31 | 1993-02-08 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPH0311127B2 (en) | 1991-02-15 |
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