TW356553B - Monocrystal producing device by using cz method and liquid's liquidic surface control process - Google Patents

Monocrystal producing device by using cz method and liquid's liquidic surface control process

Info

Publication number
TW356553B
TW356553B TW084109547A TW84109547A TW356553B TW 356553 B TW356553 B TW 356553B TW 084109547 A TW084109547 A TW 084109547A TW 84109547 A TW84109547 A TW 84109547A TW 356553 B TW356553 B TW 356553B
Authority
TW
Taiwan
Prior art keywords
monocrystal
producing device
liquidic
liquid
control process
Prior art date
Application number
TW084109547A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuo Ota
Original Assignee
Komatsu Electric Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electric Metals Co Ltd filed Critical Komatsu Electric Metals Co Ltd
Application granted granted Critical
Publication of TW356553B publication Critical patent/TW356553B/zh

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
TW084109547A 1994-03-31 1995-09-12 Monocrystal producing device by using cz method and liquid's liquidic surface control process TW356553B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8602894A JPH07277879A (ja) 1994-03-31 1994-03-31 Ｃｚ法による単結晶製造装置および融液レベル制御方法

Publications (1)

Publication Number Publication Date
TW356553B true TW356553B (en) 1999-04-21

Family

ID=13875208

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084109547A TW356553B (en) 1994-03-31 1995-09-12 Monocrystal producing device by using cz method and liquid's liquidic surface control process

Country Status (2)

Country Link
JP (1) JPH07277879A (ja)
TW (1) TW356553B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4815766B2 (ja) * 2004-08-03 2011-11-16 株式会社Ｓｕｍｃｏ シリコン単結晶製造装置及び製造方法
JP5167651B2 (ja) * 2007-02-08 2013-03-21 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法
JP6365674B2 (ja) * 2014-09-12 2018-08-01 信越半導体株式会社 単結晶の製造方法
CN110273178A (zh) * 2018-03-14 2019-09-24 胜高股份有限公司 单晶硅的提拉方法
CN111020701A (zh) * 2019-12-27 2020-04-17 内蒙古中环光伏材料有限公司 一种快速确定稳温埚位的方法
CN116288662A (zh) * 2023-05-18 2023-06-23 内蒙古中环领先半导体材料有限公司 一种控制直拉单晶液面距的方法

Also Published As

Publication number Publication date
JPH07277879A (ja) 1995-10-24

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