TW350093B - Method for manufacturing fine structures - Google Patents
Method for manufacturing fine structuresInfo
- Publication number
- TW350093B TW350093B TW086109797A TW86109797A TW350093B TW 350093 B TW350093 B TW 350093B TW 086109797 A TW086109797 A TW 086109797A TW 86109797 A TW86109797 A TW 86109797A TW 350093 B TW350093 B TW 350093B
- Authority
- TW
- Taiwan
- Prior art keywords
- fine structures
- manufacturing fine
- nuclei
- manufacturing
- geh4
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052986 germanium hydride Inorganic materials 0.000 abstract 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 238000003860 storage Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Non-Volatile Memory (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19632834A DE19632834C2 (de) | 1996-08-14 | 1996-08-14 | Verfahren zur Herstellung feiner Strukturen und dessen Verwendung zur Herstellung einer Maske und eines MOS-Transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
TW350093B true TW350093B (en) | 1999-01-11 |
Family
ID=7802658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086109797A TW350093B (en) | 1996-08-14 | 1997-07-11 | Method for manufacturing fine structures |
Country Status (6)
Country | Link |
---|---|
US (1) | US5943571A (zh) |
EP (1) | EP0825638B1 (zh) |
JP (1) | JPH10112440A (zh) |
KR (1) | KR19980018652A (zh) |
DE (2) | DE19632834C2 (zh) |
TW (1) | TW350093B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4538693B2 (ja) * | 1998-01-26 | 2010-09-08 | ソニー株式会社 | メモリ素子およびその製造方法 |
KR100271211B1 (ko) * | 1998-07-15 | 2000-12-01 | 윤덕용 | 나노결정을 이용한 비휘발성 기억소자 형성방법 |
JP2000106401A (ja) * | 1998-09-29 | 2000-04-11 | Sony Corp | メモリ素子およびその製造方法ならびに集積回路 |
JP3368225B2 (ja) | 1999-03-11 | 2003-01-20 | キヤノン株式会社 | 回折光学素子の製造方法 |
TW429607B (en) * | 1999-04-13 | 2001-04-11 | United Microelectronics Corp | Structure of dynamic random access memory capacitor and its fabricating method |
DE10034005A1 (de) * | 2000-07-07 | 2002-01-24 | Infineon Technologies Ag | Verfahren zum Erzeugen von Mikro-Rauhigkeiten auf einer Oberfläche |
US6455372B1 (en) | 2000-08-14 | 2002-09-24 | Micron Technology, Inc. | Nucleation for improved flash erase characteristics |
KR100425934B1 (ko) * | 2000-12-29 | 2004-04-03 | 주식회사 하이닉스반도체 | 실리콘-게르마늄막 형성 방법 |
US7136441B2 (en) * | 2001-01-24 | 2006-11-14 | Matsushita Electric Industrial Co., Ltd. | Clock recovery circuit |
US6656792B2 (en) * | 2001-10-19 | 2003-12-02 | Chartered Semiconductor Manufacturing Ltd | Nanocrystal flash memory device and manufacturing method therefor |
KR100526463B1 (ko) * | 2003-05-07 | 2005-11-08 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
US7170666B2 (en) * | 2004-07-27 | 2007-01-30 | Hewlett-Packard Development Company, L.P. | Nanostructure antireflection surfaces |
US7160775B2 (en) * | 2004-08-06 | 2007-01-09 | Freescale Semiconductor, Inc. | Method of discharging a semiconductor device |
JP4739729B2 (ja) * | 2004-11-08 | 2011-08-03 | パナソニック株式会社 | 反射防止構造体を備えた部材の製造方法 |
US7186616B2 (en) * | 2005-03-16 | 2007-03-06 | Freescale Semiconductor, Inc. | Method of removing nanoclusters in a semiconductor device |
US8067803B2 (en) | 2008-10-16 | 2011-11-29 | Micron Technology, Inc. | Memory devices, transistor devices and related methods |
US9773889B2 (en) * | 2014-07-18 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company Limited | Method of semiconductor arrangement formation |
CN111293118B (zh) * | 2018-12-10 | 2023-07-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4698316A (en) * | 1985-01-23 | 1987-10-06 | Rca Corporation | Method of depositing uniformly thick selective epitaxial silicon |
KR930009583B1 (ko) * | 1990-11-29 | 1993-10-07 | 삼성전자 주식회사 | 융모모양의 커패시터구조를 가진 반도체 메모리장치의 제조방법 |
JPH0521798A (ja) * | 1991-02-18 | 1993-01-29 | Alps Electric Co Ltd | 薄膜トランジスタ |
US5259918A (en) * | 1991-06-12 | 1993-11-09 | International Business Machines Corporation | Heteroepitaxial growth of germanium on silicon by UHV/CVD |
EP0541033A3 (en) * | 1991-11-08 | 1993-06-30 | Siemens Aktiengesellschaft | Process of fabrication of thin-film polycristalline silicon solar cells |
JPH0620958A (ja) * | 1992-04-10 | 1994-01-28 | Internatl Business Mach Corp <Ibm> | 粗いシリコン表面の形成およびその応用 |
US5254503A (en) * | 1992-06-02 | 1993-10-19 | International Business Machines Corporation | Process of making and using micro mask |
KR960001336B1 (ko) * | 1992-06-30 | 1996-01-26 | 현대전자산업주식회사 | 고집적 반도체소자의 제조방법 |
JPH06232042A (ja) * | 1993-01-29 | 1994-08-19 | Oki Electric Ind Co Ltd | Si−Ge薄膜の形成方法 |
EP0655788B1 (en) * | 1993-11-29 | 1998-01-21 | STMicroelectronics S.A. | A volatile memory cell |
JPH07321053A (ja) * | 1994-05-27 | 1995-12-08 | Sanyo Electric Co Ltd | 非晶質水素化シリコンゲルマニウム合金およびその製造方法 |
-
1996
- 1996-08-14 DE DE19632834A patent/DE19632834C2/de not_active Expired - Fee Related
-
1997
- 1997-06-24 EP EP97110326A patent/EP0825638B1/de not_active Expired - Lifetime
- 1997-06-24 DE DE59704768T patent/DE59704768D1/de not_active Expired - Fee Related
- 1997-06-26 US US08/883,571 patent/US5943571A/en not_active Expired - Fee Related
- 1997-07-11 TW TW086109797A patent/TW350093B/zh active
- 1997-08-13 JP JP9230485A patent/JPH10112440A/ja active Pending
- 1997-08-13 KR KR1019970038625A patent/KR19980018652A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0825638A3 (de) | 1998-12-23 |
DE19632834C2 (de) | 1998-11-05 |
EP0825638B1 (de) | 2001-10-04 |
DE59704768D1 (de) | 2001-11-08 |
EP0825638A2 (de) | 1998-02-25 |
KR19980018652A (ko) | 1998-06-05 |
US5943571A (en) | 1999-08-24 |
DE19632834A1 (de) | 1998-02-19 |
JPH10112440A (ja) | 1998-04-28 |
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