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Priority to TW086110123ApriorityCriticalpatent/TW348287B/en
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Publication of TW348287BpublicationCriticalpatent/TW348287B/en
A process for producing a gate oxide layer, which comprises: (a) providing a silicon substrate; (b) forming a first stop layer on the silicon substrate; (c) forming a first oxide layer on the interface between the silicon substrate and the first stop layer; (d) forming a second stop layer on the interface between the silicon substrate and the first oxide layer; and (e) forming a second oxide layer on the interface between the silicon substrate and the second stop layer.
TW086110123A1997-07-171997-07-17Process for producing gate oxide layer
TW348287B
(en)