TW335558B - High temperature superconductivity in strained SiSiGe - Google Patents

High temperature superconductivity in strained SiSiGe

Info

Publication number
TW335558B
TW335558B TW086107799A TW86107799A TW335558B TW 335558 B TW335558 B TW 335558B TW 086107799 A TW086107799 A TW 086107799A TW 86107799 A TW86107799 A TW 86107799A TW 335558 B TW335558 B TW 335558B
Authority
TW
Taiwan
Prior art keywords
holes
sisige
strained
high temperature
electrons
Prior art date
Application number
TW086107799A
Other languages
English (en)
Inventor
Oon Chu Jack
Ezzeldin Ismail Khalid
Yang Lee Kim
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW335558B publication Critical patent/TW335558B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Ceramic Products (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
TW086107799A 1996-09-03 1997-06-06 High temperature superconductivity in strained SiSiGe TW335558B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70734896A 1996-09-03 1996-09-03

Publications (1)

Publication Number Publication Date
TW335558B true TW335558B (en) 1998-07-01

Family

ID=24841342

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107799A TW335558B (en) 1996-09-03 1997-06-06 High temperature superconductivity in strained SiSiGe

Country Status (7)

Country Link
EP (1) EP0828296B1 (zh)
JP (1) JP3272276B2 (zh)
KR (1) KR100293400B1 (zh)
AT (1) ATE297055T1 (zh)
DE (1) DE69733389T2 (zh)
IL (1) IL121535A0 (zh)
TW (1) TW335558B (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6689211B1 (en) 1999-04-09 2004-02-10 Massachusetts Institute Of Technology Etch stop layer system
WO1999053539A1 (en) 1998-04-10 1999-10-21 Massachusetts Institute Of Technology Silicon-germanium etch stop layer system
US6750130B1 (en) 2000-01-20 2004-06-15 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
WO2001099169A2 (en) * 2000-06-22 2001-12-27 Massachusetts Institute Of Technology Etch stop layer system for sige devices
DE60125952T2 (de) 2000-08-16 2007-08-02 Massachusetts Institute Of Technology, Cambridge Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
US6649480B2 (en) 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US7301180B2 (en) 2001-06-18 2007-11-27 Massachusetts Institute Of Technology Structure and method for a high-speed semiconductor device having a Ge channel layer
US6974735B2 (en) 2001-08-09 2005-12-13 Amberwave Systems Corporation Dual layer Semiconductor Devices
AU2002349881A1 (en) 2001-09-21 2003-04-01 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
WO2003028106A2 (en) 2001-09-24 2003-04-03 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
WO2003105204A2 (en) * 2002-06-07 2003-12-18 Amberwave Systems Corporation Semiconductor devices having strained dual channel layers
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US20030227057A1 (en) 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
EP2267762A3 (en) 2002-08-23 2012-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor heterostructures having reduced dislocation pile-ups and related methods
US6900502B2 (en) 2003-04-03 2005-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel on insulator device
US6882025B2 (en) 2003-04-25 2005-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Strained-channel transistor and methods of manufacture
US7078742B2 (en) 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
US6936881B2 (en) 2003-07-25 2005-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor that includes high permittivity capacitor dielectric
US7101742B2 (en) 2003-08-12 2006-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel complementary field-effect transistors and methods of manufacture
US7112495B2 (en) 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
US7071052B2 (en) 2003-08-18 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Resistor with reduced leakage
US7888201B2 (en) 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
US7247534B2 (en) 2003-11-19 2007-07-24 International Business Machines Corporation Silicon device on Si:C-OI and SGOI and method of manufacture
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US8558278B2 (en) 2007-01-16 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Strained transistor with optimized drive current and method of forming
US7943961B2 (en) 2008-03-13 2011-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Strain bars in stressed layers of MOS devices
US7808051B2 (en) 2008-09-29 2010-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Standard cell without OD space effect in Y-direction

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770705B2 (ja) * 1986-06-19 1995-07-31 富士通株式会社 高速半導体装置
JPH0770706B2 (ja) * 1986-06-30 1995-07-31 富士通株式会社 高速半導体装置
JPH0691249B2 (ja) * 1991-01-10 1994-11-14 インターナショナル・ビジネス・マシーンズ・コーポレイション 変調ドープ形ｍｉｓｆｅｔ及びその製造方法
JPH0831625B2 (ja) * 1992-10-30 1996-03-27 株式会社日立製作所 超電導三端子素子
JPH0730160A (ja) * 1993-07-13 1995-01-31 Nec Corp 超伝導トランジスタ
US5534713A (en) * 1994-05-20 1996-07-09 International Business Machines Corporation Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers

Also Published As

Publication number Publication date
KR100293400B1 (ko) 2001-07-12
DE69733389D1 (de) 2005-07-07
JP3272276B2 (ja) 2002-04-08
IL121535A0 (en) 1998-02-08
DE69733389T2 (de) 2006-04-27
KR19980024235A (ko) 1998-07-06
EP0828296A3 (en) 1998-03-18
EP0828296A2 (en) 1998-03-11
JPH1093151A (ja) 1998-04-10
EP0828296B1 (en) 2005-06-01
ATE297055T1 (de) 2005-06-15

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees