TW335459B - Optical system and apparatus for ultraviolet lithography - Google Patents
Optical system and apparatus for ultraviolet lithographyInfo
- Publication number
- TW335459B TW335459B TW086102193A TW86102193A TW335459B TW 335459 B TW335459 B TW 335459B TW 086102193 A TW086102193 A TW 086102193A TW 86102193 A TW86102193 A TW 86102193A TW 335459 B TW335459 B TW 335459B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- wavelength
- ultraviolet lithography
- correction
- reflective surface
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 2
- 238000000233 ultraviolet lithography Methods 0.000 title abstract 2
- 230000002285 radioactive effect Effects 0.000 abstract 2
- 230000035515 penetration Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96200619 | 1996-03-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW335459B true TW335459B (en) | 1998-07-01 |
Family
ID=8223752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086102193A TW335459B (en) | 1996-03-07 | 1997-02-24 | Optical system and apparatus for ultraviolet lithography |
Country Status (6)
Country | Link |
---|---|
US (1) | US5757017A (zh) |
EP (1) | EP0824721B1 (zh) |
JP (1) | JPH11506876A (zh) |
DE (1) | DE69702641T2 (zh) |
TW (1) | TW335459B (zh) |
WO (1) | WO1997033203A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW519574B (en) * | 2000-10-20 | 2003-02-01 | Nikon Corp | Multilayer mirror and method for making the same, and EUV optical system comprising the same, and EUV microlithography system comprising the same |
JP4524976B2 (ja) * | 2001-09-13 | 2010-08-18 | 株式会社ニコン | 多層膜反射鏡の製造方法 |
US20030081722A1 (en) * | 2001-08-27 | 2003-05-01 | Nikon Corporation | Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations |
WO2004057378A1 (de) * | 2002-12-19 | 2004-07-08 | Carl Zeiss Smt Ag | Beschichtetes optisches element mit korrekturwirkung durch erzeugung einer schichtdickenvariation oder brechzahlvariation in der beschichtung |
DE10309084A1 (de) | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
DE10319005A1 (de) | 2003-04-25 | 2004-11-25 | Carl Zeiss Smt Ag | Reflektives optisches Element, optisches System und EUV-Lithographievorrichtung |
JP2005012006A (ja) * | 2003-06-19 | 2005-01-13 | Canon Inc | 表面形状補正方法 |
US7297960B2 (en) | 2003-11-17 | 2007-11-20 | Micromass Uk Limited | Mass spectrometer |
DE10360414A1 (de) * | 2003-12-19 | 2005-07-21 | Carl Zeiss Smt Ag | EUV-Projektionsobjektiv sowie Verfahren zu dessen Herstellung |
US7277231B2 (en) | 2004-04-02 | 2007-10-02 | Carl Zeiss Smt Ag | Projection objective of a microlithographic exposure apparatus |
US8064041B2 (en) | 2004-06-10 | 2011-11-22 | Carl Zeiss Smt Gmbh | Projection objective for a microlithographic projection exposure apparatus |
US7224430B2 (en) * | 2004-10-29 | 2007-05-29 | Asml Netherlands B.V. | Optical component, optical system including such an optical component, lithographic apparatus, method of correcting apodization in an optical system, device manufacturing method, and device manufactured thereby |
EP1746463A2 (de) * | 2005-07-01 | 2007-01-24 | Carl Zeiss SMT AG | Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv |
US7948675B2 (en) * | 2005-10-11 | 2011-05-24 | Nikon Corporation | Surface-corrected multilayer-film mirrors with protected reflective surfaces, exposure systems comprising same, and associated methods |
US7599112B2 (en) * | 2005-10-11 | 2009-10-06 | Nikon Corporation | Multilayer-film mirrors, lithography systems comprising same, and methods for manufacturing same |
CN101479667B (zh) | 2006-07-03 | 2011-12-07 | 卡尔蔡司Smt有限责任公司 | 修正/修复光刻投影物镜的方法 |
EP2097789B1 (en) | 2006-12-01 | 2012-08-01 | Carl Zeiss SMT GmbH | Optical system with an exchangeable, manipulable correction arrangement for reducing image aberrations |
US8163632B2 (en) | 2006-12-04 | 2012-04-24 | Carl Zeiss Smt Gmbh | Irradiation with high energy ions for surface structuring and treatment of surface proximal sections of optical elements |
DE102007009867A1 (de) * | 2007-02-28 | 2008-09-11 | Carl Zeiss Smt Ag | Abbildungsvorrichtung mit auswechselbaren Blenden sowie Verfahren hierzu |
US20090097004A1 (en) * | 2007-10-16 | 2009-04-16 | Qimonda Ag | Lithography Apparatus, Masks for Non-Telecentric Exposure and Methods of Manufacturing Integrated Circuits |
DE102013212462A1 (de) | 2013-06-27 | 2015-01-15 | Carl Zeiss Smt Gmbh | Oberflächenkorrektur von Spiegeln mit Entkopplungsbeschichtung |
DE102015213249A1 (de) | 2015-07-15 | 2017-01-19 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines Spiegels, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
DE102015224238A1 (de) | 2015-12-03 | 2016-12-15 | Carl Zeiss Smt Gmbh | Optisches Element, Projektionssystem und EUV-Lithographiesystem damit und Verfahren zur Korrektur einer Oberflächenform |
DE102021201193A1 (de) * | 2021-02-09 | 2022-08-11 | Carl Zeiss Smt Gmbh | Verfahren zur Justage eines optischen Systems, insbesondere für die Mikrolithographie |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6038681B2 (ja) * | 1978-09-27 | 1985-09-02 | キヤノン株式会社 | 紫外用多層膜 |
JPS60181704A (ja) * | 1984-02-29 | 1985-09-17 | Canon Inc | 真空紫外用反射ミラー |
US4846552A (en) * | 1986-04-16 | 1989-07-11 | The United States Of America As Represented By The Secretary Of The Air Force | Method of fabricating high efficiency binary planar optical elements |
DE3856054T2 (de) * | 1987-02-18 | 1998-03-19 | Canon K.K., Tokio/Tokyo | Reflexionsmaske |
JP3036081B2 (ja) * | 1990-12-01 | 2000-04-24 | 株式会社日立製作所 | 電子線描画装置及び方法、及びその試料面高さ測定装置 |
JP3259373B2 (ja) * | 1992-11-27 | 2002-02-25 | 株式会社日立製作所 | 露光方法及び露光装置 |
US5510230A (en) * | 1994-10-20 | 1996-04-23 | At&T Corp. | Device fabrication using DUV/EUV pattern delineation |
-
1997
- 1997-02-13 DE DE69702641T patent/DE69702641T2/de not_active Expired - Fee Related
- 1997-02-13 JP JP9531600A patent/JPH11506876A/ja not_active Ceased
- 1997-02-13 WO PCT/IB1997/000121 patent/WO1997033203A1/en active IP Right Grant
- 1997-02-13 EP EP97901740A patent/EP0824721B1/en not_active Expired - Lifetime
- 1997-02-21 US US08/803,737 patent/US5757017A/en not_active Expired - Fee Related
- 1997-02-24 TW TW086102193A patent/TW335459B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1997033203A1 (en) | 1997-09-12 |
DE69702641D1 (de) | 2000-08-31 |
JPH11506876A (ja) | 1999-06-15 |
US5757017A (en) | 1998-05-26 |
EP0824721A1 (en) | 1998-02-25 |
EP0824721B1 (en) | 2000-07-26 |
DE69702641T2 (de) | 2001-04-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |