TW329030B - Resist patterns - Google Patents
Resist patternsInfo
- Publication number
- TW329030B TW329030B TW086102729A TW86102729A TW329030B TW 329030 B TW329030 B TW 329030B TW 086102729 A TW086102729 A TW 086102729A TW 86102729 A TW86102729 A TW 86102729A TW 329030 B TW329030 B TW 329030B
- Authority
- TW
- Taiwan
- Prior art keywords
- resist
- resist patterns
- patterns
- organci
- achemically
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04994696A JP3707856B2 (ja) | 1996-03-07 | 1996-03-07 | レジストパターンの形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW329030B true TW329030B (en) | 1998-04-01 |
Family
ID=12845199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086102729A TW329030B (en) | 1996-03-07 | 1997-03-06 | Resist patterns |
Country Status (4)
Country | Link |
---|---|
US (1) | US6699645B2 (zh) |
JP (1) | JP3707856B2 (zh) |
KR (1) | KR100235209B1 (zh) |
TW (1) | TW329030B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6280911B1 (en) * | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
JP3904795B2 (ja) * | 2000-03-15 | 2007-04-11 | 株式会社東芝 | 基板処理方法及び基板処理装置 |
JP2002169299A (ja) * | 2000-09-21 | 2002-06-14 | Tokuyama Corp | フォトレジスト現像液 |
DE10153496B4 (de) * | 2001-10-31 | 2007-01-04 | Infineon Technologies Ag | Verfahren zur Aromatisierung und Cycloaliphatisierung von Fotoresists im UV-Bereich |
JP4045180B2 (ja) * | 2002-12-03 | 2008-02-13 | Azエレクトロニックマテリアルズ株式会社 | リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法 |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
KR20070034519A (ko) * | 2004-05-27 | 2007-03-28 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광감성 중합체 보호층용 현상제 |
US7776758B2 (en) * | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
JP5000510B2 (ja) | 2004-06-08 | 2012-08-15 | ナノシス・インク. | ナノ構造単層の形成方法および形成デバイスならびにかかる単層を含むデバイス |
US7968273B2 (en) * | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
KR20060017170A (ko) * | 2004-08-20 | 2006-02-23 | 동부아남반도체 주식회사 | 감광막 패턴 형성 방법 |
JP4797725B2 (ja) * | 2006-03-17 | 2011-10-19 | 凸版印刷株式会社 | レジスト用現像液組成物 |
US8317984B2 (en) * | 2009-04-16 | 2012-11-27 | Northrop Grumman Systems Corporation | Graphene oxide deoxygenation |
JP5537859B2 (ja) * | 2009-07-31 | 2014-07-02 | 富士フイルム株式会社 | 化学増幅型レジスト組成物によるパターン形成用の処理液及びそれを用いたレジストパターン形成方法 |
JP5850607B2 (ja) * | 2010-09-28 | 2016-02-03 | 富士フイルム株式会社 | パターン形成方法、化学増幅型レジスト組成物及びレジスト膜 |
JP5618924B2 (ja) * | 2011-06-30 | 2014-11-05 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、該組成物を用いたレジスト膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス |
RU2015104902A (ru) * | 2012-07-16 | 2016-09-10 | Басф Се | Композиция, используемая в изготовлении интегральных схем, оптических устройств, микромашин и механических прецизионных устройств |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3891439A (en) * | 1972-11-02 | 1975-06-24 | Polychrome Corp | Aqueous developing composition for lithographic diazo printing plates |
JPH063549B2 (ja) * | 1984-12-25 | 1994-01-12 | 株式会社東芝 | ポジ型フォトレジスト現像液組成物 |
JPH0638159B2 (ja) * | 1986-07-18 | 1994-05-18 | 東京応化工業株式会社 | ポジ型ホトレジスト用現像液 |
US5094934A (en) * | 1987-04-06 | 1992-03-10 | Morton International, Inc. | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine |
JP2626992B2 (ja) * | 1988-05-10 | 1997-07-02 | 富士写真フイルム株式会社 | 感光性平版印刷版用現像液組成物及び現像方法 |
JPH02275956A (ja) * | 1988-12-23 | 1990-11-09 | Oki Electric Ind Co Ltd | フォトレジスト組成物 |
US5252436A (en) * | 1989-12-15 | 1993-10-12 | Basf Aktiengesellschaft | Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds |
JP2881969B2 (ja) | 1990-06-05 | 1999-04-12 | 富士通株式会社 | 放射線感光レジストとパターン形成方法 |
US5326674A (en) * | 1991-04-30 | 1994-07-05 | Fuji Photo Film Co., Ltd. | Method for processing photosensitive copying materials |
JP2898143B2 (ja) | 1991-06-12 | 1999-05-31 | 三井化学株式会社 | 感光液組成物、感光性フィルム及び積層板 |
JP3221909B2 (ja) * | 1992-03-12 | 2001-10-22 | 富士通株式会社 | フォトレジスト材料およびそれを用いるパターン形成方法 |
JPH05257285A (ja) | 1992-03-12 | 1993-10-08 | Fujitsu Ltd | 放射線感光材料およびそれを用いるパターン形成方法 |
JPH05265212A (ja) * | 1992-03-17 | 1993-10-15 | Fujitsu Ltd | レジスト材料およびそれを用いるパターン形成方法 |
JP3568599B2 (ja) * | 1993-12-28 | 2004-09-22 | 富士通株式会社 | 放射線感光材料及びパターン形成方法 |
JP2715881B2 (ja) * | 1993-12-28 | 1998-02-18 | 日本電気株式会社 | 感光性樹脂組成物およびパターン形成方法 |
US5683856A (en) * | 1994-10-18 | 1997-11-04 | Fuji Photo Film Co., Ltd. | Positive-working photosensitive composition |
-
1996
- 1996-03-07 JP JP04994696A patent/JP3707856B2/ja not_active Expired - Lifetime
-
1997
- 1997-02-28 KR KR1019970006601A patent/KR100235209B1/ko active IP Right Grant
- 1997-03-05 US US08/810,773 patent/US6699645B2/en not_active Expired - Lifetime
- 1997-03-06 TW TW086102729A patent/TW329030B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970067574A (ko) | 1997-10-13 |
US20010001703A1 (en) | 2001-05-24 |
US6699645B2 (en) | 2004-03-02 |
JP3707856B2 (ja) | 2005-10-19 |
JPH09244261A (ja) | 1997-09-19 |
KR100235209B1 (ko) | 1999-12-15 |
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Legal Events
Date | Code | Title | Description |
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MK4A | Expiration of patent term of an invention patent |