TW325581B - The planarization & etchback improving method for semiconductor material layer - Google Patents

The planarization & etchback improving method for semiconductor material layer

Info

Publication number
TW325581B
TW325581B TW085101238A TW85101238A TW325581B TW 325581 B TW325581 B TW 325581B TW 085101238 A TW085101238 A TW 085101238A TW 85101238 A TW85101238 A TW 85101238A TW 325581 B TW325581 B TW 325581B
Authority
TW
Taiwan
Prior art keywords
planarization
material layer
layer
etchback
semiconductor material
Prior art date
Application number
TW085101238A
Other languages
Chinese (zh)
Inventor
Yuan-Chang Hwang
Jiin-Kuen Wang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW085101238A priority Critical patent/TW325581B/en
Application granted granted Critical
Publication of TW325581B publication Critical patent/TW325581B/en

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  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A planarization method for IC with local surface higher than adjacent surface, this method includes: (a) Deposit a smooth insulated layer on that structure; (b) Form dielectric on insulated layer; (c) Form a planarization material layer on insulated and dielectric layer; (d) Proceed local etching to planarization material layer, dielectric layer and insulated layer for planarizating smooth insulated layer.
TW085101238A 1996-02-01 1996-02-01 The planarization & etchback improving method for semiconductor material layer TW325581B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085101238A TW325581B (en) 1996-02-01 1996-02-01 The planarization & etchback improving method for semiconductor material layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085101238A TW325581B (en) 1996-02-01 1996-02-01 The planarization & etchback improving method for semiconductor material layer

Publications (1)

Publication Number Publication Date
TW325581B true TW325581B (en) 1998-01-21

Family

ID=58262184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085101238A TW325581B (en) 1996-02-01 1996-02-01 The planarization & etchback improving method for semiconductor material layer

Country Status (1)

Country Link
TW (1) TW325581B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023028921A1 (en) * 2021-09-01 2023-03-09 Yangtze Memory Technologies Co., Ltd. Methods for forming dielectric layer in forming semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023028921A1 (en) * 2021-09-01 2023-03-09 Yangtze Memory Technologies Co., Ltd. Methods for forming dielectric layer in forming semiconductor device

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