TW325581B - The planarization & etchback improving method for semiconductor material layer - Google Patents
The planarization & etchback improving method for semiconductor material layerInfo
- Publication number
- TW325581B TW325581B TW085101238A TW85101238A TW325581B TW 325581 B TW325581 B TW 325581B TW 085101238 A TW085101238 A TW 085101238A TW 85101238 A TW85101238 A TW 85101238A TW 325581 B TW325581 B TW 325581B
- Authority
- TW
- Taiwan
- Prior art keywords
- planarization
- material layer
- layer
- etchback
- semiconductor material
- Prior art date
Links
Landscapes
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A planarization method for IC with local surface higher than adjacent surface, this method includes: (a) Deposit a smooth insulated layer on that structure; (b) Form dielectric on insulated layer; (c) Form a planarization material layer on insulated and dielectric layer; (d) Proceed local etching to planarization material layer, dielectric layer and insulated layer for planarizating smooth insulated layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085101238A TW325581B (en) | 1996-02-01 | 1996-02-01 | The planarization & etchback improving method for semiconductor material layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085101238A TW325581B (en) | 1996-02-01 | 1996-02-01 | The planarization & etchback improving method for semiconductor material layer |
Publications (1)
Publication Number | Publication Date |
---|---|
TW325581B true TW325581B (en) | 1998-01-21 |
Family
ID=58262184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085101238A TW325581B (en) | 1996-02-01 | 1996-02-01 | The planarization & etchback improving method for semiconductor material layer |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW325581B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023028921A1 (en) * | 2021-09-01 | 2023-03-09 | Yangtze Memory Technologies Co., Ltd. | Methods for forming dielectric layer in forming semiconductor device |
-
1996
- 1996-02-01 TW TW085101238A patent/TW325581B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023028921A1 (en) * | 2021-09-01 | 2023-03-09 | Yangtze Memory Technologies Co., Ltd. | Methods for forming dielectric layer in forming semiconductor device |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |