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Application filed by Hyundai Eletronics Ind Co LtdfiledCriticalHyundai Eletronics Ind Co Ltd
Priority to TW085104294ApriorityCriticalpatent/TW324107B/en
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A field isolation method to make semiconductor devices. The processes include: a) forming an antioxidation film on a wafers, b) etching some areas of antioxidation film to form active areas, c) implanting dopant ion to active areas to form channel-stop areas, d) forming field oxidation film on those areas, e) removing antioxidation film, f) forming high concentration dopant area at both ends of channel-stop areas.
TW085104294A1996-04-111996-04-11A field isolation method in semiconductor devices
TW324107B
(en)