TW289154B - - Google Patents

Info

Publication number
TW289154B
TW289154B TW085100607A TW85100607A TW289154B TW 289154 B TW289154 B TW 289154B TW 085100607 A TW085100607 A TW 085100607A TW 85100607 A TW85100607 A TW 85100607A TW 289154 B TW289154 B TW 289154B
Authority
TW
Taiwan
Prior art keywords
circuit
potential
esd
coupled
rails
Prior art date
Application number
TW085100607A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=8219169&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW289154(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW289154B publication Critical patent/TW289154B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
TW085100607A 1995-04-06 1996-01-19 TW289154B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95105212A EP0736904B1 (de) 1995-04-06 1995-04-06 Integrierte Halbleiterschaltung mit einem Schutzmittel

Publications (1)

Publication Number Publication Date
TW289154B true TW289154B (zh) 1996-10-21

Family

ID=8219169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100607A TW289154B (zh) 1995-04-06 1996-01-19

Country Status (7)

Country Link
US (1) US5821804A (zh)
EP (1) EP0736904B1 (zh)
JP (1) JPH08321586A (zh)
KR (1) KR100399266B1 (zh)
AT (1) ATE229230T1 (zh)
DE (1) DE59510495D1 (zh)
TW (1) TW289154B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796034B2 (ja) * 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
US6157205A (en) * 1998-11-23 2000-12-05 Cirrus Logic, Inc. Grounding scheme for a high-speed data channel
DE19958915A1 (de) * 1998-12-08 2000-06-29 Littelfuse Inc Schutz eines integrierten Schaltkreises mit spannungsvariablen Materialien
JP3611980B2 (ja) * 1999-02-26 2005-01-19 日本テキサス・インスツルメンツ株式会社 インターフェース回路
TW473983B (en) * 1999-07-28 2002-01-21 Rohm Co Ltd Semiconductor integrated circuit device
US6353524B1 (en) 2000-03-17 2002-03-05 International Business Machines Corporation Input/output circuit having up-shifting circuitry for accommodating different voltage signals
DE10102354C1 (de) * 2001-01-19 2002-08-08 Infineon Technologies Ag Halbleiter-Bauelement mit ESD-Schutz
US6947273B2 (en) * 2001-01-29 2005-09-20 Primarion, Inc. Power, ground, and routing scheme for a microprocessor power regulator
JP2003031669A (ja) * 2001-07-13 2003-01-31 Ricoh Co Ltd 半導体装置
JP3908669B2 (ja) * 2003-01-20 2007-04-25 株式会社東芝 静電気放電保護回路装置
US20050180071A1 (en) * 2004-02-13 2005-08-18 Yi-Hsun Wu Circuit and method for ESD protection
JP4942007B2 (ja) * 2004-10-25 2012-05-30 ルネサスエレクトロニクス株式会社 半導体集積回路
JP2006237101A (ja) * 2005-02-23 2006-09-07 Nec Electronics Corp 半導体集積回路装置
CN1996593B (zh) * 2006-01-04 2010-05-12 中芯国际集成电路制造(上海)有限公司 利用浮动和/或偏置多晶硅区域的静电保护***和方法
US7777998B2 (en) * 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US8000068B2 (en) 2008-10-27 2011-08-16 Qualcomm Incorporated ESD protection for field effect transistors of analog input circuits
EP3640981A1 (en) * 2018-10-16 2020-04-22 IDT Inc. Integrated circuit with electrostatic discharge protection
FR3096516B1 (fr) * 2019-05-22 2021-06-04 St Microelectronics Rousset Dispositif intégré de protection contre les décharges électrostatiques

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870530A (en) * 1988-06-27 1989-09-26 Advanced Micro Devices, Inc. Electrostatic discharge protection circuitry for any two external pins of an I.C. package
JPH065705B2 (ja) * 1989-08-11 1994-01-19 株式会社東芝 半導体集積回路装置
JPH03156965A (ja) * 1989-11-15 1991-07-04 Fujitsu Ltd 半導体集積回路装置
DE4200884A1 (de) * 1991-01-16 1992-07-23 Micron Technology Inc Integrierte halbleiterschaltungsvorrichtung
JPH05299598A (ja) * 1992-04-20 1993-11-12 Hitachi Ltd 半導体装置
JPH0669454A (ja) * 1992-08-20 1994-03-11 Hitachi Ltd 半導体記憶装置
ATE164702T1 (de) * 1993-05-04 1998-04-15 Siemens Ag Integrierte halbleiterschaltung mit einem schutzmittel
JP2972494B2 (ja) * 1993-06-30 1999-11-08 日本電気株式会社 半導体装置
JP2570610B2 (ja) * 1993-12-24 1997-01-08 日本電気株式会社 半導体装置
DE19507313C2 (de) * 1995-03-02 1996-12-19 Siemens Ag Halbleiterbauelement mit Schutzstruktur zum Schutz vor elektrostatischer Entladung

Also Published As

Publication number Publication date
ATE229230T1 (de) 2002-12-15
US5821804A (en) 1998-10-13
EP0736904A1 (de) 1996-10-09
JPH08321586A (ja) 1996-12-03
KR100399266B1 (ko) 2003-12-11
DE59510495D1 (de) 2003-01-16
KR960039342A (ko) 1996-11-25
EP0736904B1 (de) 2002-12-04

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Legal Events

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