TW289154B - - Google Patents
Info
- Publication number
- TW289154B TW289154B TW085100607A TW85100607A TW289154B TW 289154 B TW289154 B TW 289154B TW 085100607 A TW085100607 A TW 085100607A TW 85100607 A TW85100607 A TW 85100607A TW 289154 B TW289154 B TW 289154B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- potential
- esd
- coupled
- rails
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95105212A EP0736904B1 (de) | 1995-04-06 | 1995-04-06 | Integrierte Halbleiterschaltung mit einem Schutzmittel |
Publications (1)
Publication Number | Publication Date |
---|---|
TW289154B true TW289154B (zh) | 1996-10-21 |
Family
ID=8219169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085100607A TW289154B (zh) | 1995-04-06 | 1996-01-19 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5821804A (zh) |
EP (1) | EP0736904B1 (zh) |
JP (1) | JPH08321586A (zh) |
KR (1) | KR100399266B1 (zh) |
AT (1) | ATE229230T1 (zh) |
DE (1) | DE59510495D1 (zh) |
TW (1) | TW289154B (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3796034B2 (ja) * | 1997-12-26 | 2006-07-12 | 株式会社ルネサステクノロジ | レベル変換回路および半導体集積回路装置 |
US6157205A (en) * | 1998-11-23 | 2000-12-05 | Cirrus Logic, Inc. | Grounding scheme for a high-speed data channel |
DE19958915A1 (de) * | 1998-12-08 | 2000-06-29 | Littelfuse Inc | Schutz eines integrierten Schaltkreises mit spannungsvariablen Materialien |
JP3611980B2 (ja) * | 1999-02-26 | 2005-01-19 | 日本テキサス・インスツルメンツ株式会社 | インターフェース回路 |
TW473983B (en) * | 1999-07-28 | 2002-01-21 | Rohm Co Ltd | Semiconductor integrated circuit device |
US6353524B1 (en) | 2000-03-17 | 2002-03-05 | International Business Machines Corporation | Input/output circuit having up-shifting circuitry for accommodating different voltage signals |
DE10102354C1 (de) * | 2001-01-19 | 2002-08-08 | Infineon Technologies Ag | Halbleiter-Bauelement mit ESD-Schutz |
US6947273B2 (en) * | 2001-01-29 | 2005-09-20 | Primarion, Inc. | Power, ground, and routing scheme for a microprocessor power regulator |
JP2003031669A (ja) * | 2001-07-13 | 2003-01-31 | Ricoh Co Ltd | 半導体装置 |
JP3908669B2 (ja) * | 2003-01-20 | 2007-04-25 | 株式会社東芝 | 静電気放電保護回路装置 |
US20050180071A1 (en) * | 2004-02-13 | 2005-08-18 | Yi-Hsun Wu | Circuit and method for ESD protection |
JP4942007B2 (ja) * | 2004-10-25 | 2012-05-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP2006237101A (ja) * | 2005-02-23 | 2006-09-07 | Nec Electronics Corp | 半導体集積回路装置 |
CN1996593B (zh) * | 2006-01-04 | 2010-05-12 | 中芯国际集成电路制造(上海)有限公司 | 利用浮动和/或偏置多晶硅区域的静电保护***和方法 |
US7777998B2 (en) * | 2007-09-10 | 2010-08-17 | Freescale Semiconductor, Inc. | Electrostatic discharge circuit and method therefor |
US8000068B2 (en) | 2008-10-27 | 2011-08-16 | Qualcomm Incorporated | ESD protection for field effect transistors of analog input circuits |
EP3640981A1 (en) * | 2018-10-16 | 2020-04-22 | IDT Inc. | Integrated circuit with electrostatic discharge protection |
FR3096516B1 (fr) * | 2019-05-22 | 2021-06-04 | St Microelectronics Rousset | Dispositif intégré de protection contre les décharges électrostatiques |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4870530A (en) * | 1988-06-27 | 1989-09-26 | Advanced Micro Devices, Inc. | Electrostatic discharge protection circuitry for any two external pins of an I.C. package |
JPH065705B2 (ja) * | 1989-08-11 | 1994-01-19 | 株式会社東芝 | 半導体集積回路装置 |
JPH03156965A (ja) * | 1989-11-15 | 1991-07-04 | Fujitsu Ltd | 半導体集積回路装置 |
DE4200884A1 (de) * | 1991-01-16 | 1992-07-23 | Micron Technology Inc | Integrierte halbleiterschaltungsvorrichtung |
JPH05299598A (ja) * | 1992-04-20 | 1993-11-12 | Hitachi Ltd | 半導体装置 |
JPH0669454A (ja) * | 1992-08-20 | 1994-03-11 | Hitachi Ltd | 半導体記憶装置 |
ATE164702T1 (de) * | 1993-05-04 | 1998-04-15 | Siemens Ag | Integrierte halbleiterschaltung mit einem schutzmittel |
JP2972494B2 (ja) * | 1993-06-30 | 1999-11-08 | 日本電気株式会社 | 半導体装置 |
JP2570610B2 (ja) * | 1993-12-24 | 1997-01-08 | 日本電気株式会社 | 半導体装置 |
DE19507313C2 (de) * | 1995-03-02 | 1996-12-19 | Siemens Ag | Halbleiterbauelement mit Schutzstruktur zum Schutz vor elektrostatischer Entladung |
-
1995
- 1995-04-06 AT AT95105212T patent/ATE229230T1/de not_active IP Right Cessation
- 1995-04-06 DE DE59510495T patent/DE59510495D1/de not_active Expired - Lifetime
- 1995-04-06 EP EP95105212A patent/EP0736904B1/de not_active Expired - Lifetime
-
1996
- 1996-01-19 TW TW085100607A patent/TW289154B/zh not_active IP Right Cessation
- 1996-04-05 JP JP8108687A patent/JPH08321586A/ja active Pending
- 1996-04-06 KR KR1019960010880A patent/KR100399266B1/ko not_active IP Right Cessation
- 1996-04-08 US US08/629,184 patent/US5821804A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE229230T1 (de) | 2002-12-15 |
US5821804A (en) | 1998-10-13 |
EP0736904A1 (de) | 1996-10-09 |
JPH08321586A (ja) | 1996-12-03 |
KR100399266B1 (ko) | 2003-12-11 |
DE59510495D1 (de) | 2003-01-16 |
KR960039342A (ko) | 1996-11-25 |
EP0736904B1 (de) | 2002-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |