TW280951B

TW280951B - Solar cell having a thin film silicon multilayer structure

Info

Publication number: TW280951B
Application number: TW084104368A
Authority: TW
Inventors: Willem Saris Frans
Original assignee: Willem Saris Frans
Priority date: 1995-05-01
Filing date: 1995-05-02
Publication date: 1996-07-11
Also published as: EP0826242A1; WO1996035235A1; AU5409496A; NL1000264C2

Abstract

Solar cell, comprising at least three substantially thin film parallel silicon layers, stacked upon each other, and at least two conductors providing an electrical contact with at least two of the layers, the conductors extending in a direction substantially transverse with respect to the layers, in which the thin film layers are provided by amorphous silicon of the p-type (p-Si), intrinsic amorphous silicon (i-Si) and amorphous silicon of the n-type (n-Si) respectively, in the order given by theformula (I): P-Si, (i-Si, n-Si, i-Si, p-Si)x, i-Si, n-Si (I), where preferably O<=X<=5, the amorphous silicon is hydrogenated, one of the conductors provides an electrical contact with each of the p-Si layers and the other of the conductors provides anelectrical contact with each of the n-Si layers. A certain amount of crystalline silicon of the p-type is provided within a p-Si layer, and a certain amount of crystalline silicon of the n-type is provided within an n-Si layer.

Description

280951 A7 B7 經濟部中央標準局貞工消費合作社印聚五、發明説明（ / ) 1 1 本發明偽關於一太陽電池 • 包含實質上至少三傾薄膜 1 1 矽之平行層 • 相互堆 « » 及至少二傭導體 » 其提供至少 1 1 二 m 上述矽層給霄接觸點 * 上述導黼於一方向延伸 > ^—S 請 1 先 1 並在實霣上與上述矽層橫切〇閱讀 1 上述型態之太陽電池已於 W0 93/ 1 2543 中發表 * 它説背 1 I 之明了一種薄膜矽由熔化金羼或其他已知技術中的溶液中意 1 事 1 沈成澱於支持玻璃上層〇逭些技術暗示了結晶矽薄膜之形項再填 1 〇寫本已知太 m 池的缺點是 t 為了提供足夠大之鼷租以Ml· 頁 1 I 收光線 • 它的厚度相當大〇此外形成已知太陽霣池之 1 1 矽層的材料機械力量十分弱 » 使得需要額外之建造和設 1 1 計 9 伴随而來的是額外費用增加〇 1 訂本發明之巨的傜提供上述類型的太隈霣池 » 但克服了 1 已知薄膜矽太陽電池的上述及其他缺點〇 1 I 本百的由上述型態之太陽電池達成 9 其中薄膜層包含 1 I 了非結晶態矽 (a -Si ) 〇 1 1 本發明之太陽電池包括許多較前人發明之結晶矽太陽 β 霣池佳之優黏 9 因為它以薄膜 tt 费製 * 使得其他事物 1 1 在低材料消耗率下有一宽廣範國 9 在低溫下進行 $ 在沈 1 1 澱遇程中有 P * η摻雜及合金控制，在不同種類及形狀的 1 I 廉價底質上沈澱 » 整合製造簡單及低價大置生産〇 1 1 據本發明 • 一非結晶態矽薄膜太陽霣池之厚度 t % 一 1 1 大小序列攀較一有相同動力效率 « 但使用結晶矽之已知 1 I 裝置之厚度小〇此外 » 本 3 發明之太 m 電池的機械力較已 1 1 1 1 1 1 本紙張尺度適用中國國家標準（C:NS ) A4規格（210X 297公釐） A 7 B7 五、發明説明（> ) 知太陽霣池的機械力強。據本發明中一太陽電池之實例，薄膜層傺由P型非結晶態矽（P-Si),原非結晶態矽（i-Si)及η型非結晶態矽所提供，以公式（I)所給之顒序： p-Si,(i-Si,n-Si,i-Si,p-Si)x =, i-Si,n-SI (I) 其中x是數字0或一自然數，最好是〇上述導饈之一提供毎個上述P-Si靥給一霣接觸點，而S —傭上述導饉刖提供每傾上述n-Si靥給一霣接觸點。如果X不等於0，此實例的架構由多重***平行層所組成於是大大提升了由光之口趿收衍生之載體的收集力。如果適當S擇各層接合處的空間，所有衍生載龌的收集力會趨於一致。在另一實例中，各a-Si層之厚度較上述各層的載鼸擴散長度少。在此實例中，在層間注入載醱將肋於層間電流共用，正如同n-Si及p-Si之多重插人層提供了接觸點間霣流傳導的平行通路，於是降低了霣阻損失。經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 為了更加強接觴點間平行通路的傳導力，會提供定量的P型結晶矽於一 P-Si靥中，且/或提供定量之η型結晶矽於n-S i餍中。 P型且/或η型結晶矽之量曾如_好用以提供包含微結晶矽之有限次元的小匾域那麽少，或如提供相對非結晶態矽之結晶矽的中介層那麽多。較佳的是，在根據本發明之一太皤電池中，a-Si與氫 -4 - 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 經濟部中央標準局員工消費合作社印袋 280951 A7 B7 五、發明説明（$ ) 化合。（與氫化的之a-Si以下表示為a-Si:H)。加入簠&-Si中，例如在％下相對Si為1的濃度，曾造成SiH-鍵之形成，於是替代了不活潑a-Si中不連結的鐽。於是，a-Si的光譜反應較許多其他太隈霄池材料佳，其中多數輿少數的載體生命被發現至少有l〇ns。於是，一多層a-Si太隈霉池與前人發明之太陽霄池有較高的效率，而沒有額外的光閛。此外，a-Si可與鍺（Ge),硪（C)及上述材料之混合等蘧出之材料摻雜。 a-Si層可為本霣的，或與霉力或光學上活躍的雜質摻雜，且加以選擇使霉池對太陽光譜之反應成為最好。據此發明之一太陽電池實例，包含了例如用於薄膜矽靥之底質及上靥，和相對地一覆蓋的頂層或底層。底質或上層及頂層或底層相對地會以自身已知的方法提供，因此至少底質或上層.或相對地頂層或底靥是透明的，或因此相對地底質及頂層或上層及底層皆是透明的。藉由製造一 η型匯流排給一與一用於相鄰罨池之p型匯流抹凹槽之霉池，在金鼷化過程中有2傾匾域可以連結。逭提供了相鄰a-Si電池之自動連纗相互連結，消除相互連結，繼而焊接除了輸出鉛的部分。二相鄰凹槽可能際上重叠，形成一較宽凹槽，有相對摻雜的邊壁。在此例中，將凹槽再次自動充滿金屬可提供串聯連結。現在本發明將參考所附圖示來說明：圖1顯示根據本發明之a-Si:H多層太陽霉池之第一實本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------------IT------f — (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（4·〉例的槪要切面部分，圖2顯示根據本發明之a-Si:H多靥太陽霄池之第二實例的概要切面部分。園1顯示多重太陽®池1.包含原氳化非結晶態矽（i_ Si)之***平行層2,3,4,為氫化非結晶η型矽（n-Si)之靥5,6所包圍之上述各層2,3,4,及氫化非結晶態P型矽（P-Si)之層7,8。對於層2 -凹槽面之横切已形成，它的壁10,12及9.11已被摻雜，以形成相對的非結晶態 π - Si 15和非結晶態P-Si。在凹漕中•金颺接觸點13, 14己由相對輿非結晶態n - Si 15及P-S 16之直接接觸所提供。由本質靥2-3之偶發光線衍生之載體向n-Si層5,6或 P-Si層7,8相對地擴散，其取決於倍號，且藉由相對的層5-8間金臑接觸點13,14傅送，該金靥接觸點因此可提供一光電流給一相連罨路（未顯示）。太陽電池1已以重覆型態在層的方向延伸，如此用以提供一多重太陽電池於單一底質（未顯示）上•此太限霣池之接觸點為串聯。太陽笛池/可以重覆四値連鑛相互交叠之非結晶態矽層之順序，在輿各層横切之方向輕易地延伸。圈2顯示根據本發明之另一多重太陽電池21之簧施例。此電池21大致上有與圖1中顯示的太陽霣池1相同的結構。相對應的部分已用相對應的參考符號標示。圖2 顯示的太陽電池21之結構的優點是於輸送相對應橄晶矽 25,26小層之非結晶態！1-5丨與9-5丨層5,6及7,8之電流中形成.於是大大地減少了逭些層的電阻。更進一步的減少電池21之電阻已藉相對地摻入撤晶η型矽35及p型矽 36於凹槽壁10,12及9,11中來達成。本紙張尺度適用中國國家標準（C:NS ) Α4規格（210Χ297公釐） (請先閱讀背面之注意事項再填寫本頁)280951 A7 B7 Zhengong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs, Printed and Printed V. Description of Invention (/) 1 1 The present invention is about a solar cell • Contains at least three tilted thin films 1 1 Parallel layers of silicon • Mutual stacking «» and At least two conductors »It provides at least 1 1 2 m above the silicon layer to the contact point of the sky * The above guide wire extends in one direction > ^ —S Please 1 first 1 and cross the above silicon layer on the real eye. Read 1 The above type of solar cell has been published in W0 93/1 2543 * It says that 1 I knows that a thin film silicon is formed by melting gold knives or other known technologies in solution. 1 event 1 is deposited on the upper layer of the supporting glass. The technology implies that the shape of the crystalline silicon thin film is filled with another 10. The shortcomings of the known m-pool are t in order to provide The large enough rent is Ml. Page 1 I Collect the light • Its thickness is quite large. In addition, the material of the silicon layer forming the known solar pond 1 1 The mechanical strength of the silicon layer is very weak »making additional construction and designing 1 1 count 9 accompanied Here comes the additional cost. 〇1 The giant giant of the present invention provides the above-mentioned type Taikyu Pond »but overcomes the above-mentioned and other shortcomings of 1 known thin-film silicon solar cells. The solar cell achieves 9 where the thin film layer contains 1 I of amorphous silicon (a-Si). 〇1 1 The solar cell of the present invention includes many more crystalline silicon solar β 霣池佳优优粘 9 invented because of its thin film tt fee system * makes other things 1 1 have a wide range of countries at low material consumption rate 9 at low temperature $ in Shen 1 1 P * η doping and alloy control during the deposition process, in different types And shape of 1 I precipitation on cheap substrate »Integrated manufacturing is simple and low-cost large-scale production 〇1 1 According to the present invention • The thickness of an amorphous silicon thin film solar pond t% 1 1 1 The size sequence has the same power Efficiency «But the thickness of the known 1 I device using crystalline silicon is small. In addition» The mechanical force of the 3 invention of the Tai-m battery is better than 1 1 1 1 1 1 This paper size is applicable to the Chinese National Standard (C: NS) A4 specification (210X 297mm) A 7 B7 V. Description of the invention (>) It is known that the solar power is strong. According to an example of a solar cell in the present invention, the thin-film layer is provided by P-type amorphous silicon (P-Si), original amorphous silicon (i-Si) and n-type amorphous silicon, using the formula (I ) The given sequence: p-Si, (i-Si, n-Si, i-Si, p-Si) x =, i-Si, n-SI (I) where x is the number 0 or a natural number Preferably, one of the guides provides each of the P-Si alloys to a contact point, and the S-servant guide provides the n-Si alloys per tilt to a contact point. If X is not equal to 0, the architecture of this example is composed of multiple interleaved parallel layers, which greatly enhances the collection power of the vector derived from the mouth of light. If the space at the junction of each layer is properly selected, the collection forces of all derived loads will tend to be the same. In another example, the thickness of each a-Si layer is less than the diffusion length of the above-mentioned layers. In this example, implanting a carrier between the layers will share the current between the layers. Just as multiple intervening layers with n-Si and p-Si provide parallel paths for the conduction of contact current between contacts, it reduces the resistance loss. Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling in this page) In order to further enhance the conductivity of the parallel path between the connection points, a quantitative amount of P-type crystalline silicon in a P-Si alloy , And / or provide quantitative n-type crystalline silicon in nSi. The amount of p-type and / or n-type crystalline silicon used to be as small as the number of small plaque domains used to provide finite dimensions of microcrystalline silicon, or as many interposers as crystalline silicon that provides relatively non-crystalline silicon. Preferably, in one of the batteries according to the present invention, a-Si and hydrogen-4-this paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Bag 280951 A7 B7 V. Description of the invention ($) Compound. (The a-Si with hydrogenation is hereinafter expressed as a-Si: H). Adding 簠 & -Si, for example, the concentration of Si relative to 1 at%, has caused the formation of SiH-bonds, thus replacing the unconnected ions in the inactive a-Si. Therefore, the spectral response of a-Si is better than that of many other Okuma materials, and most of the carrier life is found to have at least 10ns. Therefore, a multi-layer a-Si Okuma mold pond and the solar pond invented by predecessors have a higher efficiency, and there is no extra light. In addition, a-Si can be doped with materials such as germanium (Ge), He (C), and mixtures of these materials. The a-Si layer can be native or mixed with moldy or optically active impurities, and is selected so that the response of the mold pool to the solar spectrum becomes the best. An example of a solar cell according to this invention includes, for example, a substrate and an upper substrate for thin film silicon, and a relatively covered top or bottom layer. The bottom layer or top layer and top layer or bottom layer will be provided in a relatively known way, so at least the bottom layer or top layer. Or the top layer or bottom layer is transparent, or therefore the bottom layer and top layer or top layer and bottom layer are both transparent. By fabricating an n-type bus bar to a mold pool with a p-type bus bar groove for the adjacent pool, there are 2 tilted plaque fields that can be connected during the process of metallization. We provide automatic interconnection of adjacent a-Si batteries to eliminate interconnection, and then solder the part except the output lead. Two adjacent grooves may overlap, forming a wider groove with relatively doped side walls. In this example, automatically filling the groove with metal again provides a series connection. The present invention will now be explained with reference to the attached drawings: Figure 1 shows the first real paper size of the a-Si: H multi-layer solar mold pool according to the present invention is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm)- ------------- IT ------ f — (Please read the precautions on the back before filling in this page) A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Inventions Description (4 ·> Example of the main cut surface section, Figure 2 shows the outline cut section of the second example of the a-Si: H multi-solar solar pond according to the present invention. Park 1 shows the multiple solar® pool 1. Contains the original 氲化The parallel layers 2, 3, 4 of amorphous silicon (i_Si) are inserted into the above layers 2, 3, 4, and hydrogenated amorphous, surrounded by the hydrogenated amorphous n-type silicon (n-Si) 5,6 State P-type silicon (P-Si) layers 7, 8. For layer 2-the cross section of the groove surface has been formed, and its walls 10, 12 and 9.11 have been doped to form the relative amorphous state π- Si 15 and non-crystalline P-Si. In the recess, Jinyang contact points 13, 14 have been provided by direct contact with non-crystalline n-Si 15 and PS 16. Relative to the incidental nature of 2-3 Light-derived carrier to n-Si layer 5 , 6 or P-Si layers 7, 8 are relatively diffused, depending on the fold number, and are sent by the gold contact points 13, 14 between the opposite layers 5-8, the gold contact point can thus provide a light The current is given to a connected path (not shown). The solar cell 1 has been extended in the direction of the layer in a repeating pattern, so as to provide a multiple solar cell on a single substrate (not shown). This is too limited. The contact points are connected in series. The solar flute / can repeat the sequence of the non-crystalline silicon layers that overlap with each other, and extend easily in the cross direction of each layer. Circle 2 shows another multiple according to the invention A spring embodiment of a solar cell 21. This battery 21 has roughly the same structure as the solar cell 1 shown in FIG. 1. The corresponding parts have been marked with corresponding reference symbols. The structure of the solar cell 21 shown in FIG. 2 The advantage is that the non-crystalline state corresponding to the 25,26 small layers of olive silicon is transported! 1-5 丨 and 9-5 丨 layers 5,6 and 7,8 are formed in the current. So greatly reduce these layers The resistance of the battery 21 has been further reduced by relatively doping n-type silicon 35 and p-type silicon 36 into the groove walls 10, 12 It is reached by 9 and 11. This paper scale is applicable to the Chinese National Standard (C: NS) Α4 specification (210Χ297mm) (please read the precautions on the back before filling this page)

Claims

經濟部中央梂準局WC工消費合作社印裂 280951 bI C8 D8 六、申請專利範圍 1. 一種太陽電池，包括至少3値實質的薄睽平行矽層，相互堆叠，及至少二個導體與至少該2個層作電接觸，該導體於實質上由該層横切之方向延伸，其特擻在於薄膜靥包含非結晶態矽（a-Si)。 2. 如申請專利範圍第1項之太陽霣池.其中薄膜層由p 型非結晶態矽（P-Si),原非結晶態矽（i-Si)及η型非結晶態矽（n-Si>相對地提供，以公式（I)所給的顒序： p-Si,(i-Si,n-Si,i-Si,p-Si)x =, i-Si,n~SI (I) 其中x是數字0或自然數，各該導體之一提供各該 P-Si層給一霉接觸點，S —導腰刖提供各n-Si層給一電接觸點。 3. 如申請專利範圍第2項之太賜轚池，其中0忘xS5。 4. 如申請專利範圍第2或第3項之太陽電池，其中每個薄膜層之厚度較各該層中介質擴散長度小。 5. 如申請專利範圍第2或3項之太陽電池，其中定量之 P型結晶矽提供於一 P-Si層之内。 6. 如申請專利範困第2或3項之太陽電池，其中定量之 η型結晶矽提供於一 n-Si層之内。 7. 如申請専利範圍第1或2項之太陽霣池，其中a - Si為與氫化合。 8. 如申讅專利範圍第7項之太陽霣池，其中a-Si中氫（H) 之濃度對Si而言約為1%。 9. 如申請專利範圍第1或2項之太陽電池，其中a -Si摻有由鍺 (Ge),碩（C)和前述材料組合中選出的一材料。 10. 如申謓專利範圔第1或2項之太陽電池，其中a - Si摻有光學上活潑的雜質。本紙張尺度適用中國國家標準（CNS ) A4規私· (7210_X297公釐） ---------Ά------1T------^ I (請先閱讀背面之注意事項再填寫本頁)Printed by the WC Industrial and Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs 280951 bI C8 D8 6. Patent application 1. A solar cell, including at least 3 thin parallel silicon layers, stacked on top of each other, and at least two conductors and at least the The two layers are in electrical contact, and the conductor extends substantially in the direction transverse to the layer. Its special feature is that the film contains amorphous silicon (a-Si). 2. Such as the solar pond in the first patent application. The thin film layer consists of p-type amorphous silicon (P-Si), original amorphous silicon (i-Si) and η-type amorphous silicon (n- Si> provided relatively, in the order given by formula (I): p-Si, (i-Si, n-Si, i-Si, p-Si) x =, i-Si, n ~ SI (I ) Where x is a number 0 or a natural number, one of the conductors provides each P-Si layer to a mold contact point, and S-guide waist provides each n-Si layer to an electrical contact point. 3. If applying for a patent Scope of the second item of the Tai Chi pond, where 0 forgot xS5. 4. For the solar cell of the second or third item of the patent application, the thickness of each thin film layer is smaller than the diffusion length of the medium in each layer. 5. For example, the solar cell of patent application item 2 or 3, in which a certain amount of P-type crystalline silicon is provided in a P-Si layer. 6. For the solar cell of patent application item 2 or 3, the quantitative η Type crystalline silicon is provided in an n-Si layer. 7. If applying for the solar pond of item 1 or 2 of the scope of interest, where a-Si is combined with hydrogenation. 8. If applying for the solar item of patent item 7霣池, in which the concentration of hydrogen (H) in a-Si is about 1%. 9. The solar cell as claimed in item 1 or 2 of the patent application, in which a-Si is doped with a material selected from the group consisting of germanium (Ge), master (C) and the aforementioned materials. 10. Such as the patent application The solar cell of Fanyi Item 1 or 2, in which a-Si is doped with optically active impurities. This paper scale is applicable to China National Standard (CNS) A4 regulation private (7210_X297mm) -------- -Ά ------ 1T ------ ^ I (Please read the notes on the back before filling this page)