CN209658196U - The mono- polycrystalline N-type TOPCON battery of MWT with transparency conducting layer - Google Patents
The mono- polycrystalline N-type TOPCON battery of MWT with transparency conducting layer Download PDFInfo
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- CN209658196U CN209658196U CN201920486987.0U CN201920486987U CN209658196U CN 209658196 U CN209658196 U CN 209658196U CN 201920486987 U CN201920486987 U CN 201920486987U CN 209658196 U CN209658196 U CN 209658196U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The utility model discloses a kind of mono- polycrystalline N-type TOPCON batteries of MWT with transparency conducting layer, it include: N-type substrate, the front of the N-type substrate is provided with p type diffused layer upwards in turn, SiO2 layers, passivation layer, transparency conducting layer and positive metal electrode, the back side of the N-type substrate is successively vertically provided with ultra-thin tunnel SiO2 layers, phosphorus doping N-type silicon thin layer, the phosphorus doping N-type silicon thin layer is externally provided with back electric field layer and back metal electrode, the transparency conducting layer is equipped with multiple through-holes for being through to phosphorus doping N-type silicon thin layer, the grout metal electrode for connecting positive metal electrode is filled in the through-hole, extend to positive metal electrode outside phosphorus doping N-type silicon thin layer.By increasing transparency conducting layer, the light receiving rate that cell piece can be made to receive sunlight improves the utility model, while because of its conductive characteristic, can reduce series resistance, improve the short circuit current and fill factor of solar battery.
Description
Technical field
The utility model relates to technical field of solar batteries, mono- more particularly to a kind of MWT with transparency conducting layer
Polycrystalline N-type TOPCON battery.
Background technique
Since first piece of solar battery is since AT&T Labs is born, silicon solar cell has obtained extensive research
Development and practical application, especially crystal silicon solar energy battery, with the continuous development of science and technology, crystal silicon solar electricity
The photoelectric conversion efficiency in pond is constantly promoted, and production cost is also continuing to decline.Currently, crystal silicon solar energy battery accounts for solar-electricity
80 or more the percent of pond overall global market, the producing line photoelectric conversion efficiency of crystal silicon solar cell sheet has also been dashed forward at present
Broken 22%, it is also constantly being reduced with the cost difference of traditional thermal power generation, is being expected to maintain an equal level with the cost of thermal power generation in the coming years.
Crystal silicon solar energy battery as a kind of cleanliness without any pollution energy restructure the use of energy, reduce environmental pollution, realize it is sustainable
The important function of development etc. increasingly shows.It is different by the doping type of substrate, crystal silicon solar energy battery can be divided into N
How type crystal silicon solar and P-type crystal silicon solar battery, change the structure of crystal silicon solar energy battery, further to mention
The problem of its high photoelectric conversion efficiency, this is industry extensive concern.
Utility model content
The utility model proposes a kind of with transparency conducting layer to solve above-mentioned the technical problems existing in the prior art
The mono- polycrystalline N-type TOPCON battery of MWT.
The technical solution adopted in the utility model is:
The utility model proposes a kind of mono- polycrystalline N-type TOPCON batteries of MWT with transparency conducting layer, comprising: N-type lining
The front at bottom, the N-type substrate is provided with p type diffused layer, SiO2 layers, passivation layer, transparency conducting layer and positive metal upwards in turn
Electrode, the back side of the N-type substrate are successively vertically provided with ultra-thin tunnel SiO2 layers, phosphorus doping N-type silicon thin layer, the phosphorus doping
N-type silicon thin layer is externally provided with back electric field layer and back metal electrode, and the transparency conducting layer is through to phosphorus doping N-type silicon equipped with multiple
The through-hole of thin layer is filled with the grout metal electrode for connecting positive metal electrode in the through-hole, so that positive metal electrode is extended to phosphorus and mix
Outside miscellaneous N-type silicon thin layer.
Preferably, the N-type substrate is N-type list polysilicon chip, and the thickness of the N-type list polysilicon chip is micro- in 150-300
Between rice.
Preferably, the flannelette of the N-type substrate surface wool manufacturing is between 1-15 microns, the reflectivity of the flannelette 5% ~
Between 25%.
Preferably, the square resistance of the N-type substrate is between 50 to 100 ohm/.
Preferably, described ultra-thin tunnel SiO2 layers with a thickness of between 1 ~ 30 nanometer.
Preferably, SiO2 layers of the thickness is between 1 to 20 nanometers.
Preferably, the transparency conducting layer is ITO layer or IWO layers.
Preferably, the material of the passivation layer is alumina layer and/or silicon oxynitride layer.
Compared with the prior art, utility model has the advantages that cell piece can be made to connect by increasing transparency conducting layer
The light receiving rate for receiving sunlight improves, while because of its conductive characteristic, can reduce series resistance, improve the short circuit current of solar battery
And fill factor.And by the specific size and material of each section in optimization solar battery, so that the utility model is too
The photoelectric conversion efficiency of positive energy battery is optimal.Manufacturing method is simple and easy and compatible with existing preparation process simultaneously, just
In industrialized production.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model.
Specific embodiment
With reference to the accompanying drawing and the principles of the present invention and structure are described in detail in embodiment.
The utility model proposes a kind of mono- polycrystalline N-type TOPCON batteries of MWT with transparency conducting layer, for convenience of describing
Concept that is upper and lower, just carrying on the back is introduced, to illustrate the relative positional relationship at each position, the vocabulary up and down, just carried on the back is not used in restriction technology
Content.
As shown in Figure 1, specifically including: N-type substrate 1, N-type substrate 1 front be stacked with upwards in turn p type diffused layer 11,
SiO2 layer 12, transparency conducting layer 13 and positive metal electrode 14, the back side of N-type substrate 1 is successively vertically provided with ultra-thin tunnel SiO2
Layer 21, phosphorus doping N-type silicon thin layer 22, phosphorus doping N-type silicon thin layer 22 are externally provided with back electric field layer 23 and back metal electrode 24, wherein
Carrying on the back electric field layer, there are multiple gaps, carry on the back metal electrode and are located at gap.Transparency conducting layer 13 is through to phosphorus doping N equipped with multiple
The through-hole of type silicon thin layer 22 is filled with the grout metal electrode 15 for connecting positive metal electrode 14 in through-hole, keeps positive metal electrode 14 logical
It crosses grout metal electrode 15 to extend to outside phosphorus doping N-type silicon thin layer 22, and is located at the gap of back electric field layer 23, with back metal electricity
Pole 24 is spaced.When light is irradiated in pn-junction by transparency conducting layer, spread by photovoltaic effect in N-type substrate and p-type
Electromotive force is generated on layer, positive metal electrode connects external load with back metal electrode, to power to external load.Pass through setting
Transparency conducting layer, the light receiving rate that cell piece can be made to receive sunlight improves, while its conductive characteristic, can also reduce series electrical
Resistance, and then improve the short circuit current and fill factor of the solar battery of the utility model.
In the utility model, transparency conducting layer 13 is Indium-tin Oxide Transparent Conductive Film (ITO) or tungsten oxide tin electrically conducting transparent
Film (IWO).Both materials have high light transmittance and preferable electric conductivity.
Cell piece is placed in reacting furnace when preparing cell piece, the back side of cell piece be exposed in reacting furnace when
It waits, front is similarly exposed in reacting furnace if being not processed.For simplified processing step, production cost is reduced, so
Covering treatment is not done in the front of cell piece, generates one layer of passivation layer in the front of cell piece.Passivation layer uses alumina layer or nitrogen
Silicon oxide layer or the simultaneous doped layer of aluminium oxide and silicon oxynitride.
The specific manufacturing method process of the utility model: it is opened on the surface of N-type substrate (N-type list polysilicon chip) using laser
Hole forms the through-hole passed through for grout metal electrode, then carries out making herbs into wool processing to its surface, and surface carries out on it after making herbs into wool
Phosphorus diffusion, to the silicon wafer wet etching after phosphorus diffusion, wet etching can remove the back side phosphorus diffusion region and positive phosphorus silicon glass
Glass part；Tunnel oxide preparation is carried out at the back side of N-type list polysilicon chip and phosphorous doped silicon thin layer prepares to form ultra-thin tunnel
SiO2 layers and phosphorus doping N-type silicon thin layer；Upper surface carries out oxidation processes and grows to form SiO2 layers, later again in front plating passivation
Layer；Then it prepares positive positive metal electrode and is formed simultaneously grout metal electrode, then prepare the back metal electrode at the back side and carry out
Sintering finally plates transparency conducting layer in front.The utility model have manufacturing method it is simple and easy, and with existing preparation process
It is compatible, it is convenient for industrialized production.
The specific size and material of the utility model are as follows: N-type substrate 1 is N-type list polysilicon chip, N-type list polysilicon chip
Thickness is between 150-300 microns；The flannelette of its surface wool manufacturing between 1-15 microns, the reflectivity of flannelette 5% ~ 25% it
Between；N-type list polysilicon chip is in the square resistance after phosphorus diffusion between 50 to 100 ohm/；Ultra-thin tunnel SiO2 layers with a thickness of
Between 1 ~ 30 nanometer；SiO2 layers of thickness is between 1 to 20 nanometers.By optimizing the specific size of each section, keep this practical
Novel photoelectric conversion efficiency is optimal.
In the utility model, the preparation method of metal electrode may include printing, silver wire, plating etc..
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the utility model within the spirit and principle of utility model
Protection scope within.
Claims (8)
1. a kind of mono- polycrystalline N-type TOPCON battery of MWT with transparency conducting layer, comprising: N-type substrate (1), which is characterized in that
The front of the N-type substrate (1) be provided with upwards in turn p type diffused layer (11), SiO2 layers (12), passivation layer (16), transparent lead
Electric layer (13) and positive metal electrode (14), the back side of the N-type substrate are successively vertically provided with ultra-thin tunnel SiO2 layers of (21), phosphorus
Doped N-type silicon thin layer (22), the phosphorus doping N-type silicon thin layer (22) are externally provided with back electric field layer (23) and back metal electrode (24),
The transparency conducting layer (13) is equipped with multiple through-holes for being through to phosphorus doping N-type silicon thin layer (22), the company of being filled in the through-hole
The grout metal electrode (15) for connecing positive metal electrode (14), makes positive metal electrode (14) extend to phosphorus doping N-type silicon thin layer (22)
Outside.
2. as described in claim 1 with the mono- polycrystalline N-type TOPCON battery of MWT of transparency conducting layer, which is characterized in that described
N-type substrate (1) is N-type list polysilicon chip, and the thickness of the N-type list polysilicon chip is between 150-300 microns.
3. as described in claim 1 with the mono- polycrystalline N-type TOPCON battery of MWT of transparency conducting layer, which is characterized in that described
The flannelette of N-type substrate (1) surface wool manufacturing is between 1-15 microns, and the reflectivity of the flannelette is between 5% ~ 25%.
4. as described in claim 1 with the mono- polycrystalline N-type TOPCON battery of MWT of transparency conducting layer, which is characterized in that described
The square resistance of N-type substrate (1) is between 50 to 100 ohm/.
5. as described in claim 1 with the mono- polycrystalline N-type TOPCON battery of MWT of transparency conducting layer, which is characterized in that described
Ultra-thin tunnel SiO2 layers (21) are with a thickness of between 1 ~ 30 nanometer.
6. as described in claim 1 with the mono- polycrystalline N-type TOPCON battery of MWT of transparency conducting layer, which is characterized in that described
The thickness of SiO2 layers (12) is between 1 to 20 nanometers.
7. as described in claim 1 with the mono- polycrystalline N-type TOPCON battery of MWT of transparency conducting layer, which is characterized in that described
Transparency conducting layer (13) is ITO layer or IWO layers.
8. as described in claim 1 with the mono- polycrystalline N-type TOPCON battery of MWT of transparency conducting layer, which is characterized in that described
The material of passivation layer (16) is alumina layer and/or silicon oxynitride layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920486987.0U CN209658196U (en) | 2019-04-11 | 2019-04-11 | The mono- polycrystalline N-type TOPCON battery of MWT with transparency conducting layer |
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| CN201920486987.0U CN209658196U (en) | 2019-04-11 | 2019-04-11 | The mono- polycrystalline N-type TOPCON battery of MWT with transparency conducting layer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446331A (en) * | 2020-04-09 | 2020-07-24 | 浙江晶科能源有限公司 | Method for removing plating and method for preparing passivated contact solar cell |
-
2019
- 2019-04-11 CN CN201920486987.0U patent/CN209658196U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111446331A (en) * | 2020-04-09 | 2020-07-24 | 浙江晶科能源有限公司 | Method for removing plating and method for preparing passivated contact solar cell |
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