TW280000B - - Google Patents
Info
- Publication number
- TW280000B TW280000B TW082101302A TW82101302A TW280000B TW 280000 B TW280000 B TW 280000B TW 082101302 A TW082101302 A TW 082101302A TW 82101302 A TW82101302 A TW 82101302A TW 280000 B TW280000 B TW 280000B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/812,241 US5395798A (en) | 1991-12-19 | 1991-12-19 | Refractory metal silicide deposition process |
Publications (1)
Publication Number | Publication Date |
---|---|
TW280000B true TW280000B (zh) | 1996-07-01 |
Family
ID=25208975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW082101302A TW280000B (zh) | 1991-12-19 | 1993-02-24 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5395798A (zh) |
EP (1) | EP0547600A1 (zh) |
JP (1) | JPH065545A (zh) |
KR (1) | KR100328905B1 (zh) |
TW (1) | TW280000B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739046A (en) * | 1994-09-30 | 1998-04-14 | United Microelectronics Corporation | Method of making a reliable barrier layer |
US6200910B1 (en) * | 1996-06-25 | 2001-03-13 | Texas Instruments Incorporated | Selective titanium nitride strip |
US5949114A (en) * | 1996-11-07 | 1999-09-07 | Micron Technology, Inc. | Semiconductor device having increased breakdown voltage and method of fabricating same |
US6022801A (en) * | 1998-02-18 | 2000-02-08 | International Business Machines Corporation | Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film |
US6281102B1 (en) | 2000-01-13 | 2001-08-28 | Integrated Device Technology, Inc. | Cobalt silicide structure for improving gate oxide integrity and method for fabricating same |
US6535413B1 (en) * | 2000-08-31 | 2003-03-18 | Micron Technology, Inc. | Method of selectively forming local interconnects using design rules |
US6365496B1 (en) * | 2000-11-16 | 2002-04-02 | Stmicroelectronics, Inc. | Elimination of junction spiking using soft sputter etch and two step tin film during the contact barrier deposition process |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4690730A (en) * | 1986-03-07 | 1987-09-01 | Texas Instruments Incorporated | Oxide-capped titanium silicide formation |
JPS63280417A (ja) * | 1987-05-12 | 1988-11-17 | Fujitsu Ltd | 半導体装置の製造方法 |
US4784973A (en) * | 1987-08-24 | 1988-11-15 | Inmos Corporation | Semiconductor contact silicide/nitride process with control for silicide thickness |
JPH03136326A (ja) * | 1989-10-23 | 1991-06-11 | Mitsubishi Electric Corp | 半導体装置の製造方法およびその製造装置 |
US5043300A (en) * | 1990-04-16 | 1991-08-27 | Applied Materials, Inc. | Single anneal step process for forming titanium silicide on semiconductor wafer |
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1991
- 1991-12-19 US US07/812,241 patent/US5395798A/en not_active Expired - Lifetime
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1992
- 1992-12-17 EP EP92121487A patent/EP0547600A1/en not_active Withdrawn
- 1992-12-17 KR KR1019920024607A patent/KR100328905B1/ko not_active IP Right Cessation
- 1992-12-21 JP JP4340773A patent/JPH065545A/ja active Pending
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1993
- 1993-02-24 TW TW082101302A patent/TW280000B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH065545A (ja) | 1994-01-14 |
EP0547600A1 (en) | 1993-06-23 |
KR100328905B1 (ko) | 2002-08-17 |
US5395798A (en) | 1995-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |