TW278230B - Inhibition method of boron spiking effect in P polysilicon implanted by BF2 - Google Patents

Inhibition method of boron spiking effect in P polysilicon implanted by BF2

Info

Publication number
TW278230B
TW278230B TW84109665A TW84109665A TW278230B TW 278230 B TW278230 B TW 278230B TW 84109665 A TW84109665 A TW 84109665A TW 84109665 A TW84109665 A TW 84109665A TW 278230 B TW278230 B TW 278230B
Authority
TW
Taiwan
Prior art keywords
chip
boron
polysilicon
sending
oxide
Prior art date
Application number
TW84109665A
Other languages
Chinese (zh)
Inventor
Tian-Sheng Jaw
Jyh-Shiun Ju
Original Assignee
Nat Science Council
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Science Council filed Critical Nat Science Council
Priority to TW84109665A priority Critical patent/TW278230B/en
Application granted granted Critical
Publication of TW278230B publication Critical patent/TW278230B/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

An inhibition method of boron spiking effect in P polysilicon implanted by boron fluoride by inductively coupled nitrogen plasma comprises the steps of: from chip to oxide growth of next step with the same steps as double gate CMOS's; after cleaning silicon chip sending it into furnace, then growing 50-120 A oxide by feeding O2 under 900-1000 Celsius; sending chip into ICP system, then feeding N2 with 100-300W power and 1-30 min. period; overlapping one or more polysilicon layer with 1000-3000 A; performing ion implantation BF2 with energy 30-70Kev and implantation quantum 1x10 15 - 1x10 16 atom/cm2; cleaning the chip one more time; sending chip into furnace with feeded N2 or O2, then annealing 10-30 min. under 800-1000 Celsius; the remaining step same as double gate CMOS's; By the above method generating one nitride layer between oxide and polysilicon to form barrier that is not easy to punchthrough by boron ion.
TW84109665A 1995-09-15 1995-09-15 Inhibition method of boron spiking effect in P polysilicon implanted by BF2 TW278230B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84109665A TW278230B (en) 1995-09-15 1995-09-15 Inhibition method of boron spiking effect in P polysilicon implanted by BF2

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84109665A TW278230B (en) 1995-09-15 1995-09-15 Inhibition method of boron spiking effect in P polysilicon implanted by BF2

Publications (1)

Publication Number Publication Date
TW278230B true TW278230B (en) 1996-06-11

Family

ID=51397450

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84109665A TW278230B (en) 1995-09-15 1995-09-15 Inhibition method of boron spiking effect in P polysilicon implanted by BF2

Country Status (1)

Country Link
TW (1) TW278230B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0847079A2 (en) * 1996-12-05 1998-06-10 Texas Instruments Incorporated Method of manufacturing an MIS electrode
EP0824268A3 (en) * 1996-08-12 1999-05-26 Texas Instruments Inc. Method of fabricating a gate oxide layer
EP0926710A2 (en) * 1997-12-18 1999-06-30 Texas Instruments Incorporated Method of manufacturing a gate electrode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0824268A3 (en) * 1996-08-12 1999-05-26 Texas Instruments Inc. Method of fabricating a gate oxide layer
EP0847079A2 (en) * 1996-12-05 1998-06-10 Texas Instruments Incorporated Method of manufacturing an MIS electrode
EP0847079A3 (en) * 1996-12-05 1999-11-03 Texas Instruments Incorporated Method of manufacturing an MIS electrode
EP0926710A2 (en) * 1997-12-18 1999-06-30 Texas Instruments Incorporated Method of manufacturing a gate electrode
EP0926710A3 (en) * 1997-12-18 1999-11-03 Texas Instruments Incorporated Method of manufacturing a gate electrode
US6399445B1 (en) 1997-12-18 2002-06-04 Texas Instruments Incorporated Fabrication technique for controlled incorporation of nitrogen in gate dielectric

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