TW278230B - Inhibition method of boron spiking effect in P polysilicon implanted by BF2 - Google Patents
Inhibition method of boron spiking effect in P polysilicon implanted by BF2Info
- Publication number
- TW278230B TW278230B TW84109665A TW84109665A TW278230B TW 278230 B TW278230 B TW 278230B TW 84109665 A TW84109665 A TW 84109665A TW 84109665 A TW84109665 A TW 84109665A TW 278230 B TW278230 B TW 278230B
- Authority
- TW
- Taiwan
- Prior art keywords
- chip
- boron
- polysilicon
- sending
- oxide
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
An inhibition method of boron spiking effect in P polysilicon implanted by boron fluoride by inductively coupled nitrogen plasma comprises the steps of: from chip to oxide growth of next step with the same steps as double gate CMOS's; after cleaning silicon chip sending it into furnace, then growing 50-120 A oxide by feeding O2 under 900-1000 Celsius; sending chip into ICP system, then feeding N2 with 100-300W power and 1-30 min. period; overlapping one or more polysilicon layer with 1000-3000 A; performing ion implantation BF2 with energy 30-70Kev and implantation quantum 1x10 15 - 1x10 16 atom/cm2; cleaning the chip one more time; sending chip into furnace with feeded N2 or O2, then annealing 10-30 min. under 800-1000 Celsius; the remaining step same as double gate CMOS's; By the above method generating one nitride layer between oxide and polysilicon to form barrier that is not easy to punchthrough by boron ion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84109665A TW278230B (en) | 1995-09-15 | 1995-09-15 | Inhibition method of boron spiking effect in P polysilicon implanted by BF2 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84109665A TW278230B (en) | 1995-09-15 | 1995-09-15 | Inhibition method of boron spiking effect in P polysilicon implanted by BF2 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW278230B true TW278230B (en) | 1996-06-11 |
Family
ID=51397450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW84109665A TW278230B (en) | 1995-09-15 | 1995-09-15 | Inhibition method of boron spiking effect in P polysilicon implanted by BF2 |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW278230B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0847079A2 (en) * | 1996-12-05 | 1998-06-10 | Texas Instruments Incorporated | Method of manufacturing an MIS electrode |
EP0824268A3 (en) * | 1996-08-12 | 1999-05-26 | Texas Instruments Inc. | Method of fabricating a gate oxide layer |
EP0926710A2 (en) * | 1997-12-18 | 1999-06-30 | Texas Instruments Incorporated | Method of manufacturing a gate electrode |
-
1995
- 1995-09-15 TW TW84109665A patent/TW278230B/en not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0824268A3 (en) * | 1996-08-12 | 1999-05-26 | Texas Instruments Inc. | Method of fabricating a gate oxide layer |
EP0847079A2 (en) * | 1996-12-05 | 1998-06-10 | Texas Instruments Incorporated | Method of manufacturing an MIS electrode |
EP0847079A3 (en) * | 1996-12-05 | 1999-11-03 | Texas Instruments Incorporated | Method of manufacturing an MIS electrode |
EP0926710A2 (en) * | 1997-12-18 | 1999-06-30 | Texas Instruments Incorporated | Method of manufacturing a gate electrode |
EP0926710A3 (en) * | 1997-12-18 | 1999-11-03 | Texas Instruments Incorporated | Method of manufacturing a gate electrode |
US6399445B1 (en) | 1997-12-18 | 2002-06-04 | Texas Instruments Incorporated | Fabrication technique for controlled incorporation of nitrogen in gate dielectric |
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