TW375838B - Bipolar transistor with high energy implanted collector and its production method - Google Patents

Bipolar transistor with high energy implanted collector and its production method

Info

Publication number
TW375838B
TW375838B TW086103280A TW86103280A TW375838B TW 375838 B TW375838 B TW 375838B TW 086103280 A TW086103280 A TW 086103280A TW 86103280 A TW86103280 A TW 86103280A TW 375838 B TW375838 B TW 375838B
Authority
TW
Taiwan
Prior art keywords
high energy
bipolar transistor
production method
collector
energy implanted
Prior art date
Application number
TW086103280A
Other languages
Chinese (zh)
Inventor
Budolf Lachner
Martin Kerber
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW375838B publication Critical patent/TW375838B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The collector of a bipolar transistor is preferably produced after the production of an isolation-region on the surface of a semiconductor substrate by means of a high energy implantation, which provides a retrograde doping profile, and said collector basically has a constant distance from the upper-edge of the semiconductor substrate or the isolation-region. An epitaxial layer is unnecessary. The production method is compatible with a conventional CMOS-method.
TW086103280A 1996-03-25 1997-03-17 Bipolar transistor with high energy implanted collector and its production method TW375838B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1996111692 DE19611692C2 (en) 1996-03-25 1996-03-25 Bipolar transistor with high-energy implanted collector and manufacturing process

Publications (1)

Publication Number Publication Date
TW375838B true TW375838B (en) 1999-12-01

Family

ID=7789317

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103280A TW375838B (en) 1996-03-25 1997-03-17 Bipolar transistor with high energy implanted collector and its production method

Country Status (3)

Country Link
DE (1) DE19611692C2 (en)
TW (1) TW375838B (en)
WO (1) WO1997036328A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858828A (en) * 1997-02-18 1999-01-12 Symbios, Inc. Use of MEV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor
DE19842106A1 (en) 1998-09-08 2000-03-09 Inst Halbleiterphysik Gmbh Vertical bipolar transistor and method for its manufacture
DE19957113A1 (en) * 1999-11-26 2001-06-07 Infineon Technologies Ag Process for producing an active transistor region
DE10160509A1 (en) 2001-11-30 2003-06-12 Ihp Gmbh Semiconductor device and method for its manufacture
DE10239868B4 (en) * 2002-08-29 2005-12-29 Infineon Technologies Ag Method for producing deep doped column structures in semiconductor wafers and trench transistor arrangement produced thereby
DE10306597B4 (en) * 2003-02-17 2005-11-17 Infineon Technologies Ag A method of fabricating a semiconductor structure with increased breakdown voltage by underlying subcollector section

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4195307A (en) * 1977-07-25 1980-03-25 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
DE3174397D1 (en) * 1981-08-08 1986-05-22 Itt Ind Gmbh Deutsche Method of producing a monolithic integrated solid-state circuit with at a least one bipolar planar transistor
JPS6120367A (en) * 1984-07-07 1986-01-29 Sony Corp Manufacture of semiconductor device
FR2626406B1 (en) * 1988-01-22 1992-01-24 France Etat BIPOLAR TRANSISTOR COMPATIBLE WITH MOS TECHNOLOGY
NL8900319A (en) * 1989-02-09 1990-09-03 Imec Inter Uni Micro Electr BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THAT.
DE69033619T2 (en) * 1990-01-08 2001-04-26 Harris Corp Method for using a semiconductor arrangement with a substrate having a dielectrically insulated semiconductor island

Also Published As

Publication number Publication date
WO1997036328A1 (en) 1997-10-02
DE19611692A1 (en) 1997-10-02
DE19611692C2 (en) 2002-07-18

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