TW278218B - High-stable producing process of metal diffusion barrier layer - Google Patents

High-stable producing process of metal diffusion barrier layer

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Publication number
TW278218B
TW278218B TW83103955A TW83103955A TW278218B TW 278218 B TW278218 B TW 278218B TW 83103955 A TW83103955 A TW 83103955A TW 83103955 A TW83103955 A TW 83103955A TW 278218 B TW278218 B TW 278218B
Authority
TW
Taiwan
Prior art keywords
substrate
diffusion barrier
barrier layer
temperature
metal diffusion
Prior art date
Application number
TW83103955A
Other languages
Chinese (zh)
Inventor
Huoo-Tiee Lu
Shyh-Chang Jang
Jiann-Yuan Wu
Der-Yuan Wu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83103955A priority Critical patent/TW278218B/en
Application granted granted Critical
Publication of TW278218B publication Critical patent/TW278218B/en

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Abstract

A high-stable producing process of metal diffusion barrier layer, comprising the steps of: tto process the substrate deposited with Ti layer by rapid thermal process, RTP in an environment of NH3 or N2 at the temperature of 580 deg.C to 630 deg.C in order to form TiN layer; to eliminate the TiOx compound formed between the TiN layer and the substrate by RTP in NH3 or N2 at the temperature of 800 deg.C to 900 deg.C and to form silicide of low-resistance on the surface of Si substrate; and to temper the substrate in NH3 or N2 at the temperature of 600 deg.C to 750 deg.C as to eliminate the system stress caused by earlier thermal processes; whereby the above three processes, the adhesive capability of TiN to the substrate is enhanced and the system stress existed on the contact zone is also decreased so that the yield and the leakage of junction current can be improved as a result.
TW83103955A 1994-05-02 1994-05-02 High-stable producing process of metal diffusion barrier layer TW278218B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83103955A TW278218B (en) 1994-05-02 1994-05-02 High-stable producing process of metal diffusion barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83103955A TW278218B (en) 1994-05-02 1994-05-02 High-stable producing process of metal diffusion barrier layer

Publications (1)

Publication Number Publication Date
TW278218B true TW278218B (en) 1996-06-11

Family

ID=51397446

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83103955A TW278218B (en) 1994-05-02 1994-05-02 High-stable producing process of metal diffusion barrier layer

Country Status (1)

Country Link
TW (1) TW278218B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911857A (en) * 1996-06-27 1999-06-15 Hyundai Electronics Industries Co., Ltd. Method for forming metal wiring of semiconductor devices
CN106756726A (en) * 2016-11-24 2017-05-31 江苏雨燕模业科技有限公司 A kind of automobile die surface Hardening Treatment technique

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911857A (en) * 1996-06-27 1999-06-15 Hyundai Electronics Industries Co., Ltd. Method for forming metal wiring of semiconductor devices
CN106756726A (en) * 2016-11-24 2017-05-31 江苏雨燕模业科技有限公司 A kind of automobile die surface Hardening Treatment technique

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