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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A method for preventing PMOS from boron punch-through effect with nitrified polysilicon gate comprises the steps of: growing one gate oxide on one silicon substrate; forming at least one first polysilicon on the gate oxide; nitrifying the at least one first polysilicon; forming the second polysilicon on the at least one first polysilicon; implanting BF2+ ion to the polysilicon to complete one PMOS FET structure, in which the nitrifying process could prevent boron ion punching through the silicon substrate.
TW84102311A1995-03-101995-03-10Method for preventing PMOS from boron punch-through effect
TW273640B
(en)