TW266307B - - Google Patents

Info

Publication number
TW266307B
TW266307B TW083110384A TW83110384A TW266307B TW 266307 B TW266307 B TW 266307B TW 083110384 A TW083110384 A TW 083110384A TW 83110384 A TW83110384 A TW 83110384A TW 266307 B TW266307 B TW 266307B
Authority
TW
Taiwan
Application number
TW083110384A
Inventor
Hideki Kihara
Original Assignee
Hitachi Seisakusyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Seisakusyo Kk filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW266307B publication Critical patent/TW266307B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
TW083110384A 1993-11-12 1994-11-09 TW266307B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5283028A JPH07142444A (ja) 1993-11-12 1993-11-12 マイクロ波プラズマ処理装置および処理方法

Publications (1)

Publication Number Publication Date
TW266307B true TW266307B (zh) 1995-12-21

Family

ID=17660290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110384A TW266307B (zh) 1993-11-12 1994-11-09

Country Status (6)

Country Link
US (1) US5861601A (zh)
EP (1) EP0653775B1 (zh)
JP (1) JPH07142444A (zh)
KR (1) KR100388584B1 (zh)
DE (1) DE69416489T2 (zh)
TW (1) TW266307B (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263187A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
US5885353A (en) 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
DE19713352A1 (de) * 1997-03-29 1998-10-01 Deutsch Zentr Luft & Raumfahrt Plasmabrennersystem
EP0880164B1 (en) * 1997-05-22 2002-08-07 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
JP2000124195A (ja) * 1998-10-14 2000-04-28 Tokyo Electron Ltd 表面処理方法及びその装置
JP3352418B2 (ja) 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
JP3310957B2 (ja) * 1999-08-31 2002-08-05 東京エレクトロン株式会社 プラズマ処理装置
JP2001203099A (ja) 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
JP4504511B2 (ja) 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP3574401B2 (ja) * 2000-12-13 2004-10-06 シャープ株式会社 プラズマプロセス装置
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20040221800A1 (en) * 2001-02-27 2004-11-11 Tokyo Electron Limited Method and apparatus for plasma processing
EP1300876A4 (en) 2001-03-28 2005-12-07 Tadahiro Ohmi PLASMA TREATMENT DEVICE
JP3870909B2 (ja) * 2003-01-31 2007-01-24 株式会社島津製作所 プラズマ処理装置
JP4213482B2 (ja) * 2003-02-07 2009-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5312411B2 (ja) * 2003-02-14 2013-10-09 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
US20060137613A1 (en) * 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
WO2005081302A1 (ja) * 2004-02-19 2005-09-01 Tokyo Electron Limited 基板処理装置における処理室のクリーニング方法およびクリーニングの終点検出方法
JP2006294422A (ja) * 2005-04-11 2006-10-26 Tokyo Electron Ltd プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components
JP4793662B2 (ja) * 2008-03-28 2011-10-12 独立行政法人産業技術総合研究所 マイクロ波プラズマ処理装置
US9890457B2 (en) * 2008-06-16 2018-02-13 Board Of Trustees Of Michigan State University Microwave plasma reactors
JP2011124295A (ja) * 2009-12-09 2011-06-23 Hitachi High-Technologies Corp プラズマ処理装置
JP5657953B2 (ja) * 2010-08-27 2015-01-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20160314939A1 (en) * 2015-04-24 2016-10-27 Surmet Corporation Plasma-resistant Aluminum Oxynitride Based Reactor Components for Semi-Conductor Manufacturing and Processing Equipment
JP6509049B2 (ja) * 2015-06-05 2019-05-08 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
CN107680915B (zh) * 2016-08-02 2020-11-10 北京北方华创微电子装备有限公司 等离子体源的冷却机构及半导体加工设备
JP6698560B2 (ja) * 2017-02-01 2020-05-27 東京エレクトロン株式会社 マイクロ波プラズマ源、マイクロ波プラズマ処理装置、およびプラズマ処理方法
WO2020017015A1 (ja) * 2018-07-20 2020-01-23 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
US4870245A (en) * 1985-04-01 1989-09-26 Motorola, Inc. Plasma enhanced thermal treatment apparatus
JPS6376434A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd プラズマ処理装置及びプラズマクリーニング方法
US4776918A (en) * 1986-10-20 1988-10-11 Hitachi, Ltd. Plasma processing apparatus
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
JPH029115A (ja) * 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JP2680065B2 (ja) * 1988-09-22 1997-11-19 株式会社日立製作所 プラズマクリーニング方法
EP0406690B1 (en) * 1989-06-28 1997-03-12 Canon Kabushiki Kaisha Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate
US5367139A (en) * 1989-10-23 1994-11-22 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing
EP0478283B1 (en) * 1990-09-26 1996-12-27 Hitachi, Ltd. Microwave plasma processing method and apparatus
EP0502269A1 (en) * 1991-03-06 1992-09-09 Hitachi, Ltd. Method of and system for microwave plasma treatments
EP0510340B1 (de) * 1991-04-23 1995-05-10 Balzers Aktiengesellschaft Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer
US5198725A (en) * 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
DE69320963T2 (de) * 1992-06-22 1999-05-12 Lam Res Corp Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
US5410122A (en) * 1993-03-15 1995-04-25 Applied Materials, Inc. Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers
US5454903A (en) * 1993-10-29 1995-10-03 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization
US5507874A (en) * 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors

Also Published As

Publication number Publication date
DE69416489D1 (de) 1999-03-25
KR950015620A (ko) 1995-06-17
DE69416489T2 (de) 1999-09-30
EP0653775B1 (en) 1999-02-10
US5861601A (en) 1999-01-19
EP0653775A1 (en) 1995-05-17
KR100388584B1 (ko) 2003-09-19
JPH07142444A (ja) 1995-06-02

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