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Priority to TW84100138ApriorityCriticalpatent/TW259897B/en
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Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions
(AREA)
Abstract
A process of porous Si photo sensor includes: (1) plating the first conductive metal layer on one side of Si substrate; (2) making the Si substrate hardened in dull gas for a period of time; (3) coating one layer of anti-corrosive on the conductive metal layer; (4) anode oxidization etching the Si substrate to get porous structure on another side of Si substrate; (5) removing the anti-corrosive and plating the second conductive metal layer on the porous Si to get one porous Si photo sensor; By different distribution of each line diameter and heterojunction formed between the porous Si, the porous Si photo sensor can sense light with wide wavelength.
TW84100138A1995-01-091995-01-09Process of porous Si photo sensor
TW259897B
(en)