TW253994B - - Google Patents
Info
- Publication number
- TW253994B TW253994B TW083102109A TW83102109A TW253994B TW 253994 B TW253994 B TW 253994B TW 083102109 A TW083102109 A TW 083102109A TW 83102109 A TW83102109 A TW 83102109A TW 253994 B TW253994 B TW 253994B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4308375A DE4308375C2 (de) | 1993-03-16 | 1993-03-16 | Störspannungskompensierte Halleffekt-Einrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
TW253994B true TW253994B (de) | 1995-08-11 |
Family
ID=6482965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083102109A TW253994B (de) | 1993-03-16 | 1994-03-11 |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE4308375C2 (de) |
TW (1) | TW253994B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0704710B1 (de) * | 1994-09-29 | 2003-02-05 | Ramesh, G. Mani, Dr. | Verfahren zur Kompensation der piezoresistiver Offsetspannung in doppelverbundenen siliziumbasierenden Hall Effekt Elementen |
DE10240404A1 (de) * | 2002-09-02 | 2004-03-18 | Austriamicrosystems Ag | Hall-Sensor und Verfahren zu dessen Betrieb |
-
1993
- 1993-03-16 DE DE4308375A patent/DE4308375C2/de not_active Expired - Fee Related
-
1994
- 1994-03-11 TW TW083102109A patent/TW253994B/zh active
Also Published As
Publication number | Publication date |
---|---|
DE4308375C2 (de) | 1998-07-23 |
DE4308375A1 (de) | 1994-09-22 |