TW253982B - - Google Patents
Info
- Publication number
- TW253982B TW253982B TW081109875A TW81109875A TW253982B TW 253982 B TW253982 B TW 253982B TW 081109875 A TW081109875 A TW 081109875A TW 81109875 A TW81109875 A TW 81109875A TW 253982 B TW253982 B TW 253982B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/893,178 US5308742A (en) | 1992-06-03 | 1992-06-03 | Method of etching anti-reflection coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW253982B true TW253982B (zh) | 1995-08-11 |
Family
ID=25401148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081109875A TW253982B (zh) | 1992-06-03 | 1992-12-09 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5308742A (zh) |
| EP (1) | EP0573212A2 (zh) |
| JP (1) | JPH0669170A (zh) |
| KR (1) | KR940001293A (zh) |
| TW (1) | TW253982B (zh) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW275705B (en) * | 1994-12-19 | 1996-05-11 | Advanced Micro Devices Inc | Selective i-line barl etch process |
| US5874201A (en) * | 1995-06-05 | 1999-02-23 | International Business Machines Corporation | Dual damascene process having tapered vias |
| US5763327A (en) * | 1995-11-08 | 1998-06-09 | Advanced Micro Devices, Inc. | Integrated arc and polysilicon etching process |
| US5843847A (en) * | 1996-04-29 | 1998-12-01 | Applied Materials, Inc. | Method for etching dielectric layers with high selectivity and low microloading |
| US5814563A (en) * | 1996-04-29 | 1998-09-29 | Applied Materials, Inc. | Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas |
| US5807790A (en) * | 1996-05-07 | 1998-09-15 | Advanced Micro Devices, Inc. | Selective i-line BARL etch process |
| US6010829A (en) * | 1996-05-31 | 2000-01-04 | Texas Instruments Incorporated | Polysilicon linewidth reduction using a BARC-poly etch process |
| US5795829A (en) * | 1996-06-03 | 1998-08-18 | Advanced Micro Devices, Inc. | Method of high density plasma metal etching |
| US6025268A (en) * | 1996-06-26 | 2000-02-15 | Advanced Micro Devices, Inc. | Method of etching conductive lines through an etch resistant photoresist mask |
| US5871886A (en) * | 1996-12-12 | 1999-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sandwiched middle antireflection coating (SMARC) process |
| JP3202649B2 (ja) * | 1997-04-17 | 2001-08-27 | 日本電気株式会社 | 反射防止膜形成用材料およびこれを用いた半導体装置の製造方法 |
| US5962195A (en) * | 1997-09-10 | 1999-10-05 | Vanguard International Semiconductor Corporation | Method for controlling linewidth by etching bottom anti-reflective coating |
| FR2858716B1 (fr) * | 1997-11-20 | 2005-12-09 | Commissariat Energie Atomique | Procede d'obtention de couches localisees sur un circuit hybride |
| JP3003657B2 (ja) * | 1997-12-24 | 2000-01-31 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6391786B1 (en) * | 1997-12-31 | 2002-05-21 | Lam Research Corporation | Etching process for organic anti-reflective coating |
| JP3093720B2 (ja) * | 1998-04-08 | 2000-10-03 | 松下電子工業株式会社 | パターン形成方法 |
| US5986344A (en) | 1998-04-14 | 1999-11-16 | Advanced Micro Devices, Inc. | Anti-reflective coating layer for semiconductor device |
| US6329292B1 (en) * | 1998-07-09 | 2001-12-11 | Applied Materials, Inc. | Integrated self aligned contact etch |
| US6372651B1 (en) * | 1998-07-17 | 2002-04-16 | Advanced Micro Devices, Inc. | Method for trimming a photoresist pattern line for memory gate etching |
| US6228279B1 (en) | 1998-09-17 | 2001-05-08 | International Business Machines Corporation | High-density plasma, organic anti-reflective coating etch system compatible with sensitive photoresist materials |
| DE19852852A1 (de) * | 1998-11-11 | 2000-05-18 | Inst Halbleiterphysik Gmbh | Lithographieverfahren zur Emitterstrukturierung von Bipolartransistoren |
| GB2387026A (en) * | 2002-03-28 | 2003-10-01 | Zarlink Semiconductor Ltd | Method of coating contact holes in MEMS and micro-machining applications |
| US7759261B2 (en) | 2004-10-13 | 2010-07-20 | Commissariat A L'energie Atomique | Method for producing layers located on a hybrid circuit |
| JP2006119203A (ja) * | 2004-10-19 | 2006-05-11 | Nitto Denko Corp | 偏光板および偏光板の製造方法、ならびに、このような偏光板を用いた液晶パネル、液晶テレビおよび液晶表示装置 |
| KR101200938B1 (ko) * | 2005-09-30 | 2012-11-13 | 삼성전자주식회사 | 반도체 장치의 패턴 형성 방법 |
| US7759244B2 (en) * | 2007-05-10 | 2010-07-20 | United Microelectronics Corp. | Method for fabricating an inductor structure or a dual damascene structure |
| US8852693B2 (en) | 2011-05-19 | 2014-10-07 | Liquipel Ip Llc | Coated electronic devices and associated methods |
| CN108109966B (zh) * | 2018-01-30 | 2021-09-17 | 德淮半导体有限公司 | 静态随机存取存储器及其制造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4312732A (en) * | 1976-08-31 | 1982-01-26 | Bell Telephone Laboratories, Incorporated | Method for the optical monitoring of plasma discharge processing operations |
| JPS55140229A (en) * | 1979-04-20 | 1980-11-01 | Hitachi Ltd | Method for formation of fine pattern |
| US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
| JPS61159731A (ja) * | 1985-01-08 | 1986-07-19 | Oki Electric Ind Co Ltd | 微細パタ−ン形成方法 |
| JPS62208635A (ja) * | 1986-03-07 | 1987-09-12 | Matsushita Electric Ind Co Ltd | ドライエツチング終点検出方法 |
| JPS62282435A (ja) * | 1986-05-30 | 1987-12-08 | Matsushita Electric Ind Co Ltd | エツチングの終点検出方法 |
| US4698128A (en) * | 1986-11-17 | 1987-10-06 | Motorola, Inc. | Sloped contact etch process |
| JP3014111B2 (ja) * | 1990-02-01 | 2000-02-28 | 科学技術振興事業団 | 大気圧グロープラズマエッチング方法 |
| US5126289A (en) * | 1990-07-20 | 1992-06-30 | At&T Bell Laboratories | Semiconductor lithography methods using an arc of organic material |
| EP0525942A2 (en) * | 1991-05-31 | 1993-02-03 | AT&T Corp. | Integrated circuit fabrication process using a bilayer resist |
-
1992
- 1992-06-03 US US07/893,178 patent/US5308742A/en not_active Expired - Lifetime
- 1992-12-09 TW TW081109875A patent/TW253982B/zh active
-
1993
- 1993-03-26 KR KR1019930004784A patent/KR940001293A/ko not_active Application Discontinuation
- 1993-05-27 EP EP93304120A patent/EP0573212A2/en not_active Withdrawn
- 1993-06-03 JP JP5156329A patent/JPH0669170A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US5308742A (en) | 1994-05-03 |
| EP0573212A2 (en) | 1993-12-08 |
| KR940001293A (ko) | 1994-01-11 |
| JPH0669170A (ja) | 1994-03-11 |
| EP0573212A3 (zh) | 1994-03-09 |