TW275705B - Selective i-line barl etch process - Google Patents

Selective i-line barl etch process

Info

Publication number
TW275705B
TW275705B TW84107884A TW84107884A TW275705B TW 275705 B TW275705 B TW 275705B TW 84107884 A TW84107884 A TW 84107884A TW 84107884 A TW84107884 A TW 84107884A TW 275705 B TW275705 B TW 275705B
Authority
TW
Taiwan
Prior art keywords
barl
organic
selective
line
etch process
Prior art date
Application number
TW84107884A
Other languages
Chinese (zh)
Inventor
Gupta Subhash
F Lyons Chris
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW275705B publication Critical patent/TW275705B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Abstract

A photolithographic substrate mask patterning method which enables the reduction of changes in critical dimensions which occur in prior art etching of organic photoresist and the underlying organic i-line bottom anti-reflection layer (BARL) on a non-planar substrate. Based on the minor difference in the total carbon and oxygen content between the organic photoresist and the organic BARL, a differential in polarization is achieved using a pure N2 plasma for ion etching at certain selected conditions and a selectivity is achieved between the etch rate of the organic photoresist as compared to the etch rate of the organic BARL.
TW84107884A 1994-12-19 1995-07-29 Selective i-line barl etch process TW275705B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35923294A 1994-12-19 1994-12-19

Publications (1)

Publication Number Publication Date
TW275705B true TW275705B (en) 1996-05-11

Family

ID=23412914

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84107884A TW275705B (en) 1994-12-19 1995-07-29 Selective i-line barl etch process

Country Status (2)

Country Link
TW (1) TW275705B (en)
WO (1) WO1996019753A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980064754A (en) * 1996-12-23 1998-10-07 윌리엄비.켐플러 Process for Plasma Etching of Antireflective Coating

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163826A (en) * 1983-03-08 1984-09-14 Toshiba Corp Dry etching method
JPS6452142A (en) * 1987-08-24 1989-02-28 Nippon Telegraph & Telephone Pattern forming process and silylating apparatus
US5308742A (en) * 1992-06-03 1994-05-03 At&T Bell Laboratories Method of etching anti-reflection coating
DE69313132T2 (en) * 1992-11-25 1997-12-11 Hoechst Celanese Corp METALION REDUCTION IN ANTI-REFLECTIVE UNDERLAYERS FOR PHOTORESIST

Also Published As

Publication number Publication date
WO1996019753A1 (en) 1996-06-27

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Legal Events

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