TW250575B - - Google Patents

Info

Publication number: TW250575B
Authority: TW; Taiwan

Application number

TW083107679A

Original Assignee

Memc Electronic Materials

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-07-21

Filing date

1994-08-22

Publication date

1995-07-01

1994-08-22 Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials

1995-07-01 Application granted granted Critical

1995-07-01 Publication of TW250575B publication Critical patent/TW250575B/zh

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

TW083107679A 1993-07-21 1994-08-22 TW250575B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US08/095,759 US5408951A (en)	1993-07-21	1993-07-21	Method for growing silicon crystal

Publications (1)

Publication Number	Publication Date
TW250575B true TW250575B (zh)	1995-07-01

Family

ID=22253466

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW083107679A TW250575B (zh)	1993-07-21	1994-08-22

Country Status (9)

Country	Link
US (1)	US5408951A (zh)
EP (1)	EP0635588B1 (zh)
JP (1)	JP2766189B2 (zh)
KR (1)	KR0166999B1 (zh)
CN (1)	CN1048044C (zh)
DE (1)	DE69414652T2 (zh)
MY (1)	MY111279A (zh)
SG (1)	SG49058A1 (zh)
TW (1)	TW250575B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO1997036024A1 (en) *	1996-03-26	1997-10-02	Seh America, Inc.	Methods of doping molten semiconductor in a crystal-growing furnace
JP3223873B2 (ja) *	1997-12-24	2001-10-29	住友金属工業株式会社	シリコンウエーハ及びその製造方法
US6312517B1 (en)	2000-05-11	2001-11-06	Memc Electronic Materials, Inc.	Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
US7132091B2 (en) *	2001-09-28	2006-11-07	Memc Electronic Materials, Inc.	Single crystal silicon ingot having a high arsenic concentration
KR100439712B1 (ko) *	2002-02-25	2004-07-12	네오세미테크 주식회사	비소원료 장입 장치 및 그를 이용한 갈륨-비소 단결정제조방법
KR100486877B1 (ko)	2002-10-15	2005-05-03	주식회사 실트론	저융점 도판트 주입관이 설치된 실리콘 단결정 성장 장치및 저융점 도판트 주입 방법
DE10250822B4 (de) *	2002-10-31	2006-09-28	Siltronic Ag	Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
JP4442892B2 (ja) *	2004-03-29	2010-03-31	コバレントマテリアル株式会社	シリコン単結晶引上げ用砒素ドーパントの製造方法
US7959732B1 (en) *	2005-06-17	2011-06-14	Saint-Gobain Ceramics & Plastics, Inc.	Apparatus and method for monitoring and controlling crystal growth
US7922817B2 (en) *	2008-04-24	2011-04-12	Memc Electronic Materials, Inc.	Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
KR101106006B1 (ko) *	2010-02-04	2012-01-18	주식회사 엘지실트론	도펀트 산화막 측정방법
CN102174706A (zh) *	2011-01-05	2011-09-07	刘文祥	半导序体
EP2815219B1 (en) *	2012-02-15	2021-04-07	Robert Bosch GmbH	Pressure sensor with doped electrode
US10443148B2 (en) *	2015-03-10	2019-10-15	Globalwafers Co., Ltd.	Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt
CN109628993B (zh) *	2018-12-13	2020-07-17	徐州鑫晶半导体科技有限公司	制备砷掺杂剂的方法、应用氧化砷掺杂生长单晶硅的方法和单晶炉以及砷掺杂单晶硅

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2548046C3 (de) *	1975-10-27	1982-12-02	Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen	Verfahren zum Ziehen einkristalliner Siliciumstäbe
US4134785A (en) *	1977-04-13	1979-01-16	Western Electric Company, Inc.	Real-time analysis and control of melt-chemistry in crystal growing operations
US4591409A (en) *	1984-05-03	1986-05-27	Texas Instruments Incorporated	Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
CS252327B1 (cs) *	1986-03-27	1987-08-13	Petr Exnar	Skelni krystalická bezalkalická hmota s vysokým obsahem arsenu
JPH0218377A (ja) *	1988-07-07	1990-01-22	Nkk Corp	ドープ剤供給装置
JPH02229789A (ja) *	1989-03-01	1990-09-12	Furukawa Co Ltd	砒化シリコンの製造方法

1992
- 1992-07-20 SG SG1996005649A patent/SG49058A1/en unknown
1993
- 1993-07-21 US US08/095,759 patent/US5408951A/en not_active Expired - Lifetime
1994
- 1994-07-18 MY MYPI94001869A patent/MY111279A/en unknown
- 1994-07-20 DE DE69414652T patent/DE69414652T2/de not_active Expired - Fee Related
- 1994-07-20 EP EP94111268A patent/EP0635588B1/en not_active Expired - Lifetime
- 1994-07-21 KR KR1019940017703A patent/KR0166999B1/ko not_active IP Right Cessation
- 1994-07-21 JP JP6169322A patent/JP2766189B2/ja not_active Expired - Fee Related
- 1994-07-21 CN CN94108158A patent/CN1048044C/zh not_active Expired - Fee Related
- 1994-08-22 TW TW083107679A patent/TW250575B/zh active

Also Published As

Publication number	Publication date
MY111279A (en)	1999-10-30
KR0166999B1 (ko)	1999-01-15
CN1103115A (zh)	1995-05-31
US5408951A (en)	1995-04-25
SG49058A1 (en)	1998-05-18
EP0635588A1 (en)	1995-01-25
DE69414652D1 (de)	1998-12-24
EP0635588B1 (en)	1998-11-18
CN1048044C (zh)	2000-01-05
DE69414652T2 (de)	1999-04-08
JPH0782085A (ja)	1995-03-28
JP2766189B2 (ja)	1998-06-18
KR950003482A (ko)	1995-02-17

Publication	Publication Date	Title
FR10C0052I2 (zh)	2011-11-25
FR05C0033I1 (zh)	2005-09-30
FR2714514B1 (zh)	1997-02-21
FR2706763B1 (zh)	1995-08-11
FR2706881B1 (zh)	1995-07-28
IN178947B (zh)	1997-07-26
TW250575B (zh)	1995-07-01
IN179010B (zh)	1997-08-09
TW272250B (zh)	1996-03-11
FR2706792B1 (zh)	1995-08-04
FR2706971B1 (zh)	1997-01-17
IN181160B (zh)	1998-04-25
ITCE930002V0 (zh)	1993-03-25
IN178895B (zh)	1997-07-19
IN178899B (zh)	1997-07-19
IN176390B (zh)	1996-05-18
IN176119B (zh)	1996-02-03
GB9306673D0 (zh)	1993-05-26
IN179107B (zh)	1997-08-23
IN179359B (zh)	1997-09-27
IN180033B (zh)	1998-01-10
IN180247B (zh)	1998-01-17
IN181365B (zh)	1998-05-30
IN186098B (zh)	2001-06-16
IN184000B (zh)	2000-06-03