CN109628993B - 制备砷掺杂剂的方法、应用氧化砷掺杂生长单晶硅的方法和单晶炉以及砷掺杂单晶硅 - Google Patents
制备砷掺杂剂的方法、应用氧化砷掺杂生长单晶硅的方法和单晶炉以及砷掺杂单晶硅 Download PDFInfo
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- CN109628993B CN109628993B CN201811525438.6A CN201811525438A CN109628993B CN 109628993 B CN109628993 B CN 109628993B CN 201811525438 A CN201811525438 A CN 201811525438A CN 109628993 B CN109628993 B CN 109628993B
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- Prior art keywords
- arsenic
- silicon
- oxide particles
- doping
- molten silicon
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- 229910052785 arsenic Inorganic materials 0.000 title claims abstract description 128
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 229960002594 arsenic trioxide Drugs 0.000 title claims abstract description 99
- 229910000413 arsenic oxide Inorganic materials 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 83
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 50
- 239000002019 doping agent Substances 0.000 title claims abstract description 24
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 title claims abstract 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 108
- 239000010703 silicon Substances 0.000 claims abstract description 108
- 239000002245 particle Substances 0.000 claims abstract description 90
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 79
- 230000003647 oxidation Effects 0.000 claims abstract description 73
- 239000013078 crystal Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 106
- 239000010453 quartz Substances 0.000 claims description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 71
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 abstract description 30
- 239000007787 solid Substances 0.000 abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 239000002699 waste material Substances 0.000 abstract description 7
- 239000007789 gas Substances 0.000 abstract description 5
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 89
- 239000007788 liquid Substances 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 14
- 238000005054 agglomeration Methods 0.000 description 8
- 230000002776 aggregation Effects 0.000 description 8
- LULLIKNODDLMDQ-UHFFFAOYSA-N arsenic(3+) Chemical compound [As+3] LULLIKNODDLMDQ-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 2
- ROTPTZPNGBUOLZ-UHFFFAOYSA-N arsenic boron Chemical compound [B].[As] ROTPTZPNGBUOLZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 206010016165 failure to thrive Diseases 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G28/00—Compounds of arsenic
- C01G28/005—Oxides; Hydroxides; Oxyacids
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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CN201811525438.6A CN109628993B (zh) | 2018-12-13 | 2018-12-13 | 制备砷掺杂剂的方法、应用氧化砷掺杂生长单晶硅的方法和单晶炉以及砷掺杂单晶硅 |
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CN201811525438.6A CN109628993B (zh) | 2018-12-13 | 2018-12-13 | 制备砷掺杂剂的方法、应用氧化砷掺杂生长单晶硅的方法和单晶炉以及砷掺杂单晶硅 |
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CN109628993A CN109628993A (zh) | 2019-04-16 |
CN109628993B true CN109628993B (zh) | 2020-07-17 |
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SG49058A1 (en) * | 1993-07-21 | 1998-05-18 | Memc Electronic Materials | Improved method for growing silicon crystal |
JP3670513B2 (ja) * | 1999-04-28 | 2005-07-13 | 東芝セラミックス株式会社 | シリコン単結晶の製造方法 |
JP4442892B2 (ja) * | 2004-03-29 | 2010-03-31 | コバレントマテリアル株式会社 | シリコン単結晶引上げ用砒素ドーパントの製造方法 |
CN101935767B (zh) * | 2010-09-26 | 2012-04-11 | 山西龙港高纯材料有限公司 | 一种高纯砷的制备方法 |
CN103388085B (zh) * | 2013-07-18 | 2014-06-11 | 扬州大学 | 一种高纯砷的制备方法 |
CN104388690B (zh) * | 2014-11-01 | 2016-08-24 | 中南大学 | 一种含砷难处理金矿熔池熔炼富集有价金属的方法 |
TWI575123B (zh) * | 2015-10-12 | 2017-03-21 | 環球晶圓股份有限公司 | 摻雜器、長晶爐以及使用長晶爐的方法 |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230425 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Patentee before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |