TW246720B - - Google Patents

Info

Publication number
TW246720B
TW246720B TW082101415A TW82101415A TW246720B TW 246720 B TW246720 B TW 246720B TW 082101415 A TW082101415 A TW 082101415A TW 82101415 A TW82101415 A TW 82101415A TW 246720 B TW246720 B TW 246720B
Authority
TW
Taiwan
Application number
TW082101415A
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW246720B publication Critical patent/TW246720B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW082101415A 1992-06-05 1993-02-26 TW246720B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14535292A JP3245959B2 (ja) 1992-06-05 1992-06-05 液晶画像表示装置の製造方法

Publications (1)

Publication Number Publication Date
TW246720B true TW246720B (zh) 1995-05-01

Family

ID=15383211

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082101415A TW246720B (zh) 1992-06-05 1993-02-26

Country Status (6)

Country Link
US (1) US5418636A (zh)
EP (1) EP0573258B1 (zh)
JP (1) JP3245959B2 (zh)
KR (1) KR100187598B1 (zh)
DE (1) DE69323650T2 (zh)
TW (1) TW246720B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7081938B1 (en) * 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5600459A (en) * 1993-12-20 1997-02-04 Roy; Howard S. Multiple-shutter flat-panel display having individually controlled pixels and method for making same
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
JPH08306926A (ja) * 1995-05-07 1996-11-22 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
US6586325B2 (en) * 2001-06-26 2003-07-01 Cosmos Vacuum Technology Corporation Process for making an electronic device having a multilevel structure
TW594156B (en) * 2002-01-04 2004-06-21 Fujitsu Display Tech Substrate for display device and display device equipped therewith
JP5397219B2 (ja) * 2006-04-19 2014-01-22 イグニス・イノベーション・インコーポレイテッド アクティブマトリックス表示装置用の安定な駆動スキーム
JP2014199899A (ja) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5995514A (ja) * 1982-11-25 1984-06-01 Sharp Corp 液晶表示装置の製造方法
US4889411A (en) * 1985-08-02 1989-12-26 General Electric Company Process and structure for thin film transistor with aluminum contacts and nonaluminum metallization in liquid crystal displays
US4778258A (en) * 1987-10-05 1988-10-18 General Electric Company Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays
JPH0816756B2 (ja) * 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
JPH02171726A (ja) * 1988-12-26 1990-07-03 Toshiba Corp 液晶表示装置用非線形抵抗素子の製造方法
JP2600929B2 (ja) * 1989-01-27 1997-04-16 松下電器産業株式会社 液晶画像表示装置およびその製造方法
JPH0816758B2 (ja) * 1989-02-17 1996-02-21 松下電器産業株式会社 液晶画像表示装置およびその製造方法
JPH02240636A (ja) * 1989-03-15 1990-09-25 Hitachi Ltd アクティブマトリクス基板とこれを用いた液晶表示素子
US5162901A (en) * 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
JPH03240027A (ja) * 1990-02-19 1991-10-25 Mitsubishi Electric Corp 表示装置
JPH0443328A (ja) * 1990-06-11 1992-02-13 Hitachi Ltd 液晶表示パネルの製造方法
JP3226223B2 (ja) * 1990-07-12 2001-11-05 株式会社東芝 薄膜トランジスタアレイ装置および液晶表示装置

Also Published As

Publication number Publication date
KR940005986A (ko) 1994-03-22
KR100187598B1 (ko) 1999-06-01
JP3245959B2 (ja) 2002-01-15
US5418636A (en) 1995-05-23
JPH05341314A (ja) 1993-12-24
DE69323650D1 (de) 1999-04-08
EP0573258B1 (en) 1999-03-03
EP0573258A1 (en) 1993-12-08
DE69323650T2 (de) 1999-06-24

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