TW202414827A - 半導體結構及系統晶片(SoC)積體電路及其製造方法 - Google Patents
半導體結構及系統晶片(SoC)積體電路及其製造方法 Download PDFInfo
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- TW202414827A TW202414827A TW112145410A TW112145410A TW202414827A TW 202414827 A TW202414827 A TW 202414827A TW 112145410 A TW112145410 A TW 112145410A TW 112145410 A TW112145410 A TW 112145410A TW 202414827 A TW202414827 A TW 202414827A
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Abstract
說明在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置以及在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置的製造方法。舉例而言,半導體結構包含配置在基板上方的第一半導體裝置。第一半導體裝置具有導電率型及包含具有第一功函數的閘極電極。半導體結構也包含配置在基板上方的第二半導體裝置。第二半導體裝置具有導電率型及包含具有第二不同的功函數的閘極電極。
Description
本發明的實施例是半導體裝置及處理的領域,特別是在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置以及在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置的製造方法。
在過去數十年,積體電路的特徵縮小是一直成長的半導體產業背後的推力。縮小至愈來愈小的特徵能夠在半導體晶片的有限基板面上增加功能單元的密度。舉例而言,縮小的電晶體尺寸允許將增加數目的記憶體或邏輯裝置併入於晶片上,導致製造具有增加容量的產品。但是,對於愈來愈多的容量之推動一直是議題。使各裝置的性能最佳化的需求愈來愈重要。
在製造積體電路裝置時,隨著裝置尺寸持續縮小,例如鰭式場效電晶體(鰭式FET)等多閘極電晶體變得愈來
愈重要。在習知的製程中,鰭式FET一般製於塊體矽基板或是絕緣體上矽基板上。在某些情形中,塊體矽基板由於它們較低的成本及與現有高產能塊體矽基板基礎設施的共容性而為較佳的。
但是,將多閘極電晶體縮小並不是沒有後果。隨著微電子電路的這些基本構建塊的尺寸降低以及隨著在給定區域中製造的基本構建塊的絕對數目增加,對用以製造這些構建塊的半導體製程之限制變得令人難以應付。
100B:半導體結構
102B:I/O電晶體
104B:邏輯電晶體
200:半導體結構的未完成部份
202:I/O電晶體
204:邏輯電晶體
300:半導體結構或裝置
400:計算裝置
圖1A顯示具有配置在共同基板上的I/O電晶體及邏輯電晶體之半導體結構的未完成部份之剖面視圖。
圖1B顯示根據本發明的實施例之具有配置在共同基板上的I/O電晶體及邏輯電晶體之半導體結構的未完成部份之剖面視圖。
圖2A-2F顯示根據本發明的實施例之在共同基板上製造I/O電晶體及邏輯電晶體之方法中不同操作之剖面視圖,其中:
圖2A顯示在邏輯電晶體的閘極電極區中具有,但在I/O電晶體的閘極電極區中不具有,硬遮罩形式之未完成的半導體結構。
圖2B顯示在I/O電晶體的閘極電極區部份功函數金屬層被移除之圖2A的結構。
圖2C顯示第二功函數金屬層及第二硬遮罩層形成於
上的圖2B之結構。
圖2D顯示第二硬遮罩層凹陷後圖2C的結構;
圖2E顯示在第二功函數層的曝露部份移除後圖2D的結構;以及
圖2F顯示在硬遮罩層及第二硬遮罩層的餘留部份移除後圖2E的結構。
圖3A顯示根據本發明的實施例之非平面半導體裝置的剖面視圖。
圖3B顯示根據本發明的實施例之沿著圖3A的半導體裝置的a-a’軸取得之平面視圖。
圖4顯示根據本發明的實施之計算裝置。
說明在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置以及在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置的製造方法。在下述說明中,揭示眾多具體細節,例如特定集成及材料系,以助於完整瞭解本發明的實施例。習於此技藝者將瞭解,不用這些特定細節,仍可實施本發明的實施例。在其它情形中,未詳述例如積體電路設計佈局等習知特點,以免不必要地模糊本發明的實施例。此外,須瞭解,圖式中所示的各實施例是說明表示且不一定依比例繪製。
此處所述的一或更多實施例關於用於製於共同基板上不同間距之半導體裝置的多重功函數(WF)的製造方
式。可應用於製造共同基板上由共用製程設計製成的具有I/O電晶體(例如驅動電晶體)和邏輯電晶體(例如計算電晶體)之結構以及金屬氧化物半導體(MOS)。在實例中,I/O電晶體製成比對應的邏輯電晶體具有更大的閘極長度以及不同的功函數。
關於背景說明,目前,系統晶片(SoC)積體電路中的不同裝置之性能是由不同的間距、關鍵尺寸(CD)及佈植修飾所控制。但是,具有相同導電率型(例如N型或P型)的所有裝置典型上具有相同的功函數(WF)。相對地,此處所述的一或更多實施例提供用於不同裝置之不同功函數的圖型化方式,而能夠獨立控制各裝置型式的性能。
更具體而言,一或更多實施例利用具有不同CD之不同結構之間碳硬遮罩(CHM)的蝕刻速率相依性(例如,較寬的CD比較窄的CD具有更快的蝕刻速率)。如此,可以對不同的裝置(例如I/O相對於邏輯裝置)圖型化不同的功函數層(例如金屬閘極層)。然後,一或更多實施例提供機會以達到用於具有例如I/O裝置相對於邏輯裝置等不同功能的類似裝置(例如N型裝置)之不同的真實閘極功函數。藉由使裝置之間的功函數差異化,可以獨立地以各裝置的性能為目標,而不用使用任何增加的遮罩操作。
提供不同的有效閘極功函數給具有例如I/O裝置相對於邏輯裝置等不同功能的類似裝置(例如N型裝置)之先
前的方式涉及使用基板佈植差異化以控制不同裝置的性能。舉例而言,圖1A顯示具有配置在共同基板101A上並以層間介電質區103A分隔的I/O電晶體102A及邏輯電晶體104A之半導體結構100A的未完成部份之剖面視圖。參考圖1A,I/O電晶體102A形成在第一鰭部106A上,以及,邏輯電晶體104A形成於第二鰭部108A上。在所示的特定實例中,I/O電晶體102A具有三個相對較寬的閘極電極區110A、112A及114A(剖面視圖顯示在源極/汲極區之間取的閘極長度111A)。如同所示,下方鰭部106A包含磊晶源極/汲極區116A。同時,邏輯電晶體104A具有三個相對較窄的閘極電極區120A、122A及124A(剖面視圖顯示在源極/汲極區之間取的閘極長度121A)。如同所示,下方鰭部108A也可包含磊晶源極/汲極區126A。
再參考圖1A,在所示的處理點,已執行了置換閘極程序,其中該置換閘極程序,例如在閘極電極區110A、112A、114A、120A、122A、及124A,仿閘極材料由功函數金屬層118A取代。但是,功函數金屬層118A對於I/O電晶體102A及邏輯電晶體104A的閘極電極區都是相同的。因此,為了使I/O電晶體102A及邏輯電晶體104A的有效功函數差異化,使用例如鰭摻雜差異等方式。須瞭解,後續可執行例如閘極填充、接點形成、及線的後端(BEOL)互連製造等其它處理以完成圖1A的裝置。
與圖1A相關地說明的配置相對地,圖1B顯示根據
本發明的實施例之半導體結構100B的未完成部份之剖面視圖,半導體結構100B具有配置在共同基板101B上而由層間介電質區103B分開的I/O電晶體102B及邏輯電晶體104B。參考圖1B,I/O電晶體102B形成在第一鰭部106B上,以及,邏輯電晶體104B形成於第二鰭部108B上。在所示的特定實例中,I/O電晶體102B具有三個相對較寬的閘極電極區110B、112B及114B(剖面視圖顯示閘極長度111B取於源極/汲極區之間)。第一鰭部106B具有兩端,以及該兩端每一者具有一側壁。閘極電極區110B在該兩端其中之一者上且鄰接其側壁。閘極電極區114B在該兩端其中之另一者上且鄰接其側壁。如同所示,下方鰭部106B包含磊晶源極/汲極區116B。同時,邏輯電晶體104B具有三個相對較窄的閘極電極區120B、122B及124B(剖面視圖顯示閘極長度121B取於源極/汲極區之間)。類似地,第二鰭部108B具有兩端,以及該兩端每一者具有一側壁。閘極電極區120B在該兩端其中之一者上且鄰接其側壁。閘極電極區124B在該兩端其中之另一者上且鄰接其側壁。如同所示,下方鰭部108B也包含磊晶源極/汲極區126B。
再參考圖1B,在所示的處理點,已執行了置換閘極程序,其中該置換閘極程序,例如在邏輯電晶體104B的閘極電極區120B、122B、及124B處,仿閘極材料由功函數金屬層118B取代。但是,在實施例中,即使對於相同導電率型裝置(亦即,在I/O電晶體102B及邏輯電晶體
104B都是N型,或是在I/O電晶體102B及邏輯電晶體104B都是P型的情形中),I/O電晶體102B的閘極電極區110B、112B、及114B仍然包含不同的功函數金屬層119。在實施例中,功函數金屬層119具有的真實功函數不同於功函數金屬層118B的真實功函數。在一個這樣的實施例中,功函數金屬層119具有的厚度不同於功函數金屬層118B的厚度(如同所示)。在另一個這樣的實施例中,功函數金屬層119具有的總材料成分不同於功函數金屬層118B的總材料成分。在又另一實施例中,在厚度及總材料成分上,功函數金屬層119都不同於功函數金屬層118B。在特定實施例中,I/O電晶體102B及邏輯電晶體104B都是N型裝置,以及,功函數金屬層119由與功函數金屬層118B實質上相同的材料構成,但是,比功函數金屬層118B更厚;相較於功函數金屬層118B的真實功函數,功函數金屬層119的真實功函數約以50-80電子伏特範圍內的量從N型偏向中間能帶隙。須瞭解,後續可執行例如閘極填充、接點形成、及線的後端(BEOL)互連製造等其它處理以完成圖1B的裝置。也須瞭解,雖然未顯示,但是,閘極介電層可以分別配置在功函數金屬層118B及119之間與鰭部108B及106B之間。
在一態樣中,半導體製造設計涉及製造不同的功函數層用於類似導電率型在功能上不同的裝置。舉例而言,圖2A-2F顯示根據本發明的實施例之在共同基板上製造I/O電晶體及邏輯電晶體之方法中不同操作之剖面視圖。
參考圖2A,半導體結構的未完成部份200包含配置在共同基板201上的I/O電晶體202及邏輯電晶體204。I/O電晶體202形成於第一鰭部206上,以及,邏輯電晶體204形成於第二鰭部208上。在所示的特定實例中,I/O電晶體202具有三個相對較寬的閘極電極區210、212及214(剖面視圖顯示閘極長度211取於源極/汲極區之間)。如同所示,下方鰭部206包含磊晶源極/汲極區216。同時,邏輯電晶體204具有三個相對較窄的閘極電極區220、222及224(剖面視圖顯示閘極長度221取於源極/汲極區之間)。如同所示,下方鰭部208也包含磊晶源極/汲極區226。
再參考圖2A,在所示的處理點,已執行了置換閘極程序,其中該置換閘極程序,例如在閘極電極區210、212、214、220、222、及224,仿閘極材料由第二功函數金屬層218取代。須瞭解,在此階段,第二功函數金屬層218的功函數對於I/O電晶體202及邏輯電晶體204的閘極電極區都是相同的。特別地,對I/O電晶體202及邏輯電晶體204,同時及在相同的處理操作中,形成第二功函數金屬層218。也須瞭解,雖然未顯示,但是,閘極介電層可以配置在第二功函數金屬層218與鰭部208及206B之間。也顯示於圖2A中的是閘極電極間隔器228及層間介電質區229。
再參考圖2A,硬遮罩層230形成於未完成的半導體結構200的部份上。特別地,硬遮罩層230形成於I/O電
晶體202與邏輯電晶體204之間,最重要地,在邏輯電晶體204的閘極電極區220、222及224內。但是,如同所示,硬遮罩層230未形成(或是被移除)於I/O電晶體202的閘極電極區210、212及214中。根據本發明的實施例,首先全區地形成硬遮罩層,亦即,在邏輯電晶體204的閘極電極區220、222、及224之內、以及I/O電晶體202的閘極電極區210、212、及214之內,硬遮罩層230首先形成於I/O電晶體202與邏輯電晶體204之間。然後,移除I/O電晶體202的閘極電極區210、212、及214之內的硬遮罩層230的部份。在一個這樣的實施例中,藉由旋轉塗敷處理,首先全區地形成硬遮罩層230。然後相對於其它本材料及特徵,將旋轉塗敷層選擇性蝕刻,以降低層的高度。在實例中,在不同特徵區的蝕刻速率會變化。如此,在一實施例中,硬遮罩層從較寬特徴210、212及214比從相對較窄的特徴220、222、及224蝕刻更快。因此,如同所示,旋轉塗敷層可以從較寬特徴210、212及214完全地移除,而旋轉塗敷層的一部份固持在較窄特徵220、222、及224中。須瞭解,在蝕刻處理中,在I/O電晶體202與邏輯電晶體204之間的旋轉塗敷層的部份可以被移除而不是被保持。在實施例中,硬遮罩層230實質上由碳構成以及稱為碳硬遮罩(CHM)層。
參考圖2B,移除閘極電極區210、212及214(亦即,在I/O電晶體202)之第二功函數金屬層218的部份。在實施例中,相對於硬遮罩層230,在閘極電極區
210、212及214之第二功函數金屬層218的部份被選擇性地移除。在一個這樣的實施例中,如同所示,在邏輯電晶體204中,未由硬遮罩層230保護的第二功函數金屬層218的上部也被移除。此外,假使閘極介電層存在於鰭部206上時,則其在此時會被移除,或是被保留。在實施例中,第二功函數金屬層218的曝露部份會由例如濕蝕刻處理、乾蝕刻處理、或是其組合等選擇性蝕刻處理移除。
參考圖2C,第一功函數金屬層240形成於圖2B的結構上。更特別地,第一功函數金屬層240形成於I/O電晶體202的閘極電極區210、212及214中。此外,如圖2C中所示,第一功函數金屬層240形成於餘留在邏輯電晶體的閘極電極區220、222及224中的硬遮罩層230及第二功函數金屬層218的曝露部份上。在實施例中,第一功函數金屬層240具有的真實功函數不同於第二功函數金屬層218的真實功函數。在一個這樣的實施例中,第一功函數金屬層240具有的厚度不同於第二功函數金屬層218的厚度(如同所示)。在另一個這樣的實施例中,第一功函數金屬層240具有的總材料成分不同於第二功函數金屬層218的總材料成分。在又另一實施例中,在厚度及總材料成分上,第一功函數金屬層240與第二功函數金屬層218都不同。在特定實施例中,I/O電晶體202及邏輯電晶體204都是N型裝置,以及,第一功函數金屬層240由與第二功函數金屬層218實質上相同的材料構成,但是比第二功函數金屬層218更厚;相較於第二功函數金屬層218的
真實功函數,第一功函數金屬層240的真實功函數以約在50-80電子伏特範圍中的量從N型偏向中間能帶隙。
須瞭解,在閘極介電層從圖2B的I/O電晶體移除的情形中,正好在第一功函數金屬層240形成之前,形成閘極介電層。再參考圖2C,然後,第二硬遮罩層242形成於第一功函數金屬層240上方。在一個這樣的實施例中,第二硬遮罩層242由與硬遮罩層230相同或實質上相同的材料構成。舉例而言,在一個這樣的實施例中,第二硬遮罩層242是碳硬遮罩層。
參考圖2D,蝕刻第二硬遮罩層242以使I/O電晶體202的閘極電極區210、212及214中的部份凹縮。在邏輯電晶體204的情形中,蝕刻將第二硬遮罩層242從邏輯電晶體204的閘極電極區220、222及224移除。此外,第二硬遮罩層242的凹縮使得在I/O電晶體202及邏輯電晶體204之第一功函數金屬層240的部份曝露。在實施例中,藉由例如灰化處理、濕蝕刻處理、乾蝕刻處理、或其組合等選擇性蝕刻處理,使第二硬遮罩層242凹縮。
參考圖2E,從I/O電晶體202及邏輯電晶體204移除在使第二硬遮罩層242凹縮時曝露的第一功函數金屬層240的部份。在實施例中,藉由例如濕蝕刻處理、乾蝕刻處理、或其組合等選擇性蝕刻處理,移除第二功函數金屬層242的曝露部份。
參考圖2F,移除硬遮罩層230及第二硬遮罩層242的其餘部份。移除會使得I/O電晶體202的閘極電極區
210、212、及214中形成的及圖型化的第一功函數金屬層240曝露,以及也使邏輯電晶體204的閘極電極區220、222、及224中形成的及圖型化的第二功函數金屬層218曝露。在實施例中,以例如灰化處理、濕蝕刻處理、乾蝕刻處理、或其組合等選擇性蝕刻處理,移除硬遮罩層230及第二硬遮罩層242的其餘部份。再參考圖2F,介電區230’顯示於電晶體之間。雖然區230’可為被保留的硬遮罩區,此區也被移除且後續由層間介電材料取代。也須瞭解,後續可執行例如閘極填充、接點形成、及線的後端(BEOL)互連製造等其它處理以完成圖2F的裝置。
一般而言,再度參考圖2A-2F,在實施例中,所述的方式可以用於N型(例如NMOS)或是P型(例如PMOS)或二者之裝置製造。須瞭解,可在後續處理操作中以相同或類似的方式,使用例如圖2F的結構等產生自上述舉例說明的處理設計之結構以完成例如PMOS及NMOS裝置製造等裝置製造。作為完成的裝置之實例,圖3A及3B分別顯示根據本發明的實施例之例如完成版本的I/O電晶體202或邏輯電晶體204等非平面半導體裝置的剖面視圖及平面視圖(沿著剖面視圖的a-a’軸取之)。須注意,圖3A的剖面視圖截取成與圖2F的剖面視圖正交,如同沿著閘極電極區210、212、214、220、222或224中任一閘極結構截取般。此外,在圖3A及3B中所示的實例中,閘極結構遮蓋三個不同的半導體鰭部。
參考圖3A,例如完成版本的I/O電晶體202或邏輯
電晶體204等半導體結構或裝置300包含從基板302形成、以及在隔離區306之內的非平面主動區(例如,包含突出的鰭部304和子鰭部區305之鰭結構)。
再參考圖3A,閘極結構308配置於非平面主動區的突出部304上以及隔離區306的一部份上。如同所示,閘極結構308包含閘極電極350及閘極介電層352。在一實施例中,閘極結構308也包含介電蓋層354。從此透視圖也看到閘極接點314、及上方閘極接點通路316、與上方金屬互連360,所有這些都配置在層間介電質堆疊或層370中。從圖3A的透視圖也看到閘極接點314在一實施例中是配置在隔離區306上,但不在非平面主動區上。如同所示,鰭部304由於它們從下方基板302延伸,所以被視為塊體鰭。在其它實施例中,鰭部由矽在絕緣體上(SOI)型基板形成且因而配置在全區絕緣體層上。
參考圖3B,閘極結構308顯示為配置在突出鰭部304上。從此透視圖中可看到突出鰭部304的源極和汲極區304A和304B。在一實施例中,源極和汲極區304A和304B是突出鰭部304的原始材料的摻雜部份。在另一實施例中,藉由例如磊晶沈積,突出鰭部304的材料被移除及由另一半導體材料取代。在任一情形中,在塊體型裝置的情形中,源極和汲極區304A和304B延伸至介電層306的高度之下,亦即,進入子鰭區305。替代地,源極和汲極區304A和304B未延伸至介電層306的高度之下,且是在介電層306的高度之上或是共平面。
在實施例中,半導體結構或裝置300是例如但不限於鰭式FET或三閘極或類似裝置等非平面裝置。在此實施例中,對應的半導體通道區由三維體構成或是形成於三維體中。在一個這樣的實施例中,如圖3A中所示,閘極結構308的閘極電極堆疊圍繞至少上表面以及三維體的成對側壁。
與圖2A-2F及3A分別相關地說明基板201和302可由能承受製程及電荷能遷移的半導體材料構成。在實施例中,基板201或302是由摻雜例如但不限於磷、砷、硼或其組合之電荷載子的矽/鍺、鍺層、或結晶矽構成的塊體基板。在一實施例中,塊基板201或302中的矽原子的濃度大於97%。在另一實施例中,塊體基板201或302是由生長在有區別的結晶基板頂部上的磊晶層構成,例如生長在摻雜硼的塊體矽單晶基板頂部上的矽磊晶層。塊體基板201或302可替代地由III-V族材料構成。在實施例中,塊體基板201或302由例如但不限於氮化鎵、磷化鎵、砷化鎵、磷化銦、銻化銦、銦鎵砷化物、鋁鎵砷化物、銦鎵砷化物、或其結合等III-V族材料構成。在一實施例中,塊體基板201或302由III-V族材料構成,以及,電荷載子摻雜物雜質原子是例如但不限於碳、矽、鍺、氧、硫、硒或碲。替代地,可以使用矽在絕緣體(SOI)基板以取代塊體基板。在此情形中,圖2A-2F中所示的區域201是全區隔離層。
隔離區306由適合最終電隔離或有助於隔離永久閘極
結構的部份與下方塊體基板或隔離形成於下方塊體基板內的主動區(例如隔離鰭主動區)之材料構成。舉例而言,在一實施例中,隔離區306由例如但不限於二氧化矽、氧氮化矽、氮化矽、或碳摻雜的氮化矽等電介材料構成。
閘極結構308可由包含閘極介電層352及閘極電極層350(例如第二功函數金屬層218或第一功函數金屬層240)之閘極電極堆疊構成。在實施例中,閘極電極堆疊的閘極電極由金屬閘極構成及閘極介電層由高K材料構成。舉例而言,在一實施例中,閘極介電層由例如但不限於氧化鉿、氧氮化鉿、矽酸鉿、氧化鑭、氧化鋯、矽酸鋯、氧化鉭、鈦酸鋇鍶、鈦酸鋇、鈦酸鍶、氧化釔、氧化鋁、鉛鈧鉭氧化物、鈮酸鉛鋅、或其組合所構成。此外,一部份的閘極介電層包含由基板302的頂部少數層形成的原生氧化物層。在實施例中,閘極介電層由頂部高k部份及半導體材料的氧化物構成的下部所構成。在一實施例中,閘極介電層由氧化鉿的頂部以及二氧化矽或氧氮化矽的底部構成。
在一實施例中,閘極介電層350(例如第二功函數金屬層218或第一功函數金屬層240)由例如但不限於金屬氮化物、金屬碳化物、金屬矽化物、金屬鋁化物、鉿、鋯、鈦、鉭、鋁、釕、鈀、鉑、鈷、鎳、或導電金屬氧化物等金屬層構成。在特定實施例中,閘極電極由形成於金屬功函數設定層上方的非功函數設定填充材料構成。
與閘極電極堆疊相關連的間隔器(圖2A-2F中以228
顯示)可由適合最終電隔離或有助於永久閘極結構與例如自行對準接點等相鄰導電接點隔離的材料構成。舉例而言,在一實施例中,間隔器可由介電材料構成,例如但不限於二氧化矽、氧氮化矽、氮化矽、或摻雜碳的氮化矽。
閘極接點314及上方閘極接點通路316可以由導電材料構成。在實施例中,一或更多接點或通路由金屬物種構成。金屬物種可為純金屬,例如鎢、鎳、或鈷,或可為例如金屬-金屬合金或是金屬-半導體合金(例如矽化物材料)等合金。
在實施例中,閘極結構308(或是閘極電極區210、212、214、220、222、及224)首先由涉及多微影術之多閘極圖型化形成,以藉由SiN硬遮罩的蝕刻及後續多次地來界定多閘極。在一實施例中,在硬遮罩層上形成遮罩,遮罩是由地形遮罩部及抗反射塗層(ARC)構成。在特別的此實施例中,地形遮罩部是碳硬遮罩(CHM)層及抗反射塗層是矽ARC層。地形遮罩部及ARC層可由傳統的微影術及蝕刻處理技術圖型化。在一實施例中,如同此技藝中所知般,遮罩也包含最上光阻層,以及,可由傳統的微影及顯影處理圖型化。在特定實施例中,在將光阻層顯影時,移除曝露至光源的光阻層之部份。因此,圖型化的光阻層由正光阻材料構成。在特定實施例中,光阻層是由正型光阻材料構成,例如但不限於248nm光阻、193nm光阻、157nm光阻、極紫外光(EUV)光阻、電子束壓印層、或是具有重氮萘醌的酚樹脂基質。在另一特定實施例
中,在將光阻層顯影時,受光源曝照的光阻層的部份會固持。因此,光阻層由負光阻材料構成。在特定實施例中,光阻層由負型光阻材料構成,例如但不限於聚順異戊二烯或聚乙烯基桂皮酸鹽。
此外,如同與圖2A相關地簡述般,閘極堆疊結構308(及閘極電極區210、212、214、220、222及224)可由置換閘極處理製造。在此設計中,其中該置換閘極處,例如多晶矽或氮化矽柱材料可被移除及由永久閘極電極材料替換。在一個這樣的實施例中,與經由較早的處理而執行相反地,也在此處理中形成永久閘極介電層。在實施例中,以乾蝕刻或濕蝕刻處理,移除眾多仿閘極。在一實施例中,眾多仿閘極由多晶矽或非晶矽構成且以包含SF6的乾蝕刻處理移除。在另一實施例中,眾多仿閘極由多晶矽或非晶矽構成且以包括含水NH4OH或氫氧化四鉀銨之濕蝕刻處理移除它。在一實施例中,眾多仿閘極由氮化矽構成且以包括含水磷酸的濕蝕刻移除。
在實施例中,此處所述的一或更多方式基本上思及仿及置換閘極處理結合仿及置換接點處理。在一個這樣的實施例中,在置換閘極處理之後執行置換接點處理,以允許至少部份永久閘極堆疊之高溫退火。舉例而言,在特定的此實施例中,例如在形成閘極介電層之後,在大於約600℃的溫度下,執行至少部份永久閘極結構之退火。
再參考圖3A,半導體結構或裝置300的配置將閘極接點設置於隔離區上。此配置被視為未充份使用佈局空
間。但是,在另一實施例中,半導體裝置具有閘極電極的接點部份形成於主動區上之接點結構。一般而言,在閘極的主動部份上及與溝槽接點通路相同的層中形成閘極接點結構(例如通路)之前(或之外),本發明的一或更多實施例包含首先使用閘極對準溝槽接點處理。此處理可實施成形成用於半導體結構製造的溝槽接點結構,例如用於積體電路製造。在實施例中,溝槽接點圖案形成為與現有的閘極圖案對齊。相對地,習知的方式典型地涉及以微影接點圖型緊密對準現有的閘極圖案並結合選擇性接點蝕刻之額外的微影處理。舉例而言,習知的處理包含具有接點特徵的分別圖型化之多(閘)柵的圖型化。
須瞭解,並非需要實施上述處理的所有態樣才落在本發明的實施例的精神及範圍之內。舉例而言,在一實施例中,在閘極堆疊的主動部份上製造閘極接點之前,絕不需要形成仿閘極。上述閘極堆疊事實上是如同最初形成般的永久閘極堆疊。而且,此處所述的處理可以用以製造一或眾多半導體裝置。半導體裝置可為電晶體或類似裝置。舉例而言,在一實施例中,半導體裝置是用於邏輯或記憶體之金屬氧化物半導體場效電晶體(MOS)、或是雙極電晶體。而且,在實施例中,半導體裝置具有三維架構,例如鰭式FET裝置、三閘極裝置、或是被獨立接取的雙閘極裝置。一或更多實施例對於包含在系統晶片(SoC)產品中的裝置特別有用。此外,須瞭解,與圖2A-2F相關地說明的處理設計也可應用至平面裝置製造。
整體而言,此處所述的實施例提供製造具有用於不同裝置的不同功函數之方式。一或更多實施例增強以各別裝置的性能獨立地為目標,而不會有增加的遮罩操作之額外成本。
圖4顯示根據本發明的一實施之計算裝置400。計算裝置400容納主機板402。主機板402包含多個組件,這些組件包含但不限於處理器404及至少一通訊晶片406。處理器404實體地及電地耦合至主機板402。在某些實施中,至少一通訊晶片406也是實體地及電地耦合主機板402。在另外的實施中,通訊晶片406是處理器404的一部份。
取決於其應用,計算裝置400包含實體地或電地耦合或未耦合至主機板402之其它組件。這些其它組件包含但不限於依電性記憶體(例如,動態隨機存取記憶體(DRAM)、非依電性記憶體(例如,唯讀記憶體(ROM))、快閃記憶體、圖形處理器、數位訊號處理器、密碼處理器、晶片組、天線、顯示器、觸控螢幕顯示器、觸控螢幕控制器、電池、音頻編解碼器、視頻編解碼器、功率放大器、全球定位系統(GPS)裝置、羅盤、加速儀、陀螺儀、揚音器、相機、及大量儲存裝置(例如硬碟機、光碟(CD)、數位多樣式碟片(DVD)、等等)。
通訊晶片406能夠對計算裝置400進行資料傳輸的無線通訊。「無線」一詞及其衍生詞可以用以說明經由使用
經過非固態介質之被調變的電磁輻射來傳輸資料之電路、裝置、系統、方法、技術、通訊通道、等等。此名詞並非意指相關的裝置未含有任何線,但是,在某些實施例中它們未含有任何線。通訊晶片406可以實施多種無線標準或協定,包含但不限於Wi-Fi(IEEE 802.11系列)、WiMAX(IEEE 802.16系列)、IEEE 802.20、長程演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍芽、其衍生、以及任何其它被指定為3G、4G、5G、及之外的無線協定。計算裝置400包含眾多通訊晶片406。舉例而言,第一通訊晶片406專用於例如Wi-Fi及藍芽等較短程無線通訊,而第二通訊晶片406專用於例如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO、等等較長程無線通訊。
計算裝置400的處理器404包含封裝在處理器404之內的積體電路晶粒。在本發明的某些實施中,處理器的積體電路晶粒包含根據本發明的實施建立之例如MOS-FET電晶體等一或更多裝置。「處理器」一詞意指處理來自暫存器及/或記憶體的電子資料以將電子資料轉換成可儲存於暫存器及/或記憶體中的其它電子資料之任何裝置或裝置的一部份。
通訊晶片406也包含封裝在通訊晶片406之內的積體電路晶粒。根據本發明的另一實施,通訊晶片的積體電路晶粒包含根據本發明的實施建立的例如MOS-FET電晶體
等一或更多裝置。
在另外的實施中,裝納於計算裝置400之內的另一組件含有包含根據本發明的實施建立的例如MOS-FET電晶體等一或更多裝置之積體電路晶粒。
在各式各樣的實施中,計算裝置400可以是膝上型電腦、小筆電、筆記型電腦、超薄筆記型電腦、智慧型電話、平板電腦、個人數位助理(PDA)、超薄行動PC、行動電話、桌上型電腦、伺服器、印表機、掃描器、監視器、機上盒、娛樂控制單元、數位相機、可攜式音樂播放器、或是數位攝影機。在又其它實施中,計算裝置400可為處理資料的任何其它電子裝置。
因此,本發明的實施例包含在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置以及在共同基板上具有不同功函數的非平面I/O及邏輯半導體裝置的製造方法。
在實施例中,半導體結構包含配置在基板上方的第一半導體裝置。第一半導體裝置具有導電率型及包含具有第一功函數的閘極電極。半導體結構也包含配置在基板上方的第二半導體裝置。第二半導體裝置具有導電率型及包含具有第二不同的功函數的閘極電極。
在一實施例中,第一半導體裝置是I/O電晶體,第二半導體裝置是邏輯電晶體。
在一實施例中,具有第一功函數的閘極電極包含具有厚度之第一功函數金屬層,具有第二功函數的閘極電極包
含具有厚度之第二功函數金屬層,以及,第一功函數金屬層的厚度不同於第二功函數金屬層的厚度。
在一實施例中,具有第一功函數的閘極電極包含具有總材料成分之第一功函數金屬層,具有第二功函數的閘極電極包含具有總材料成分之第二功函數金屬層,以及,第一功函數金屬層的總材料成分不同於第二功函數金屬層的總材料成分。
在一實施例中,具有第一功函數的閘極電極包含具有總材料成分及厚度之第一功函數金屬層,具有第二功函數的閘極電極包含具有總材料成分及厚度之第二功函數金屬層,以及,第一功函數金屬層的總材料成分及厚度不同於第二功函數金屬層的總材料成分及厚度。
在一實施例中,導電率型是N型。
在一實施例中,具有第一功函數的閘極電極包含具有厚度之第一功函數金屬層,具有第二功函數的閘極電極包含具有厚度之第二功函數金屬層。第一功函數金屬層的厚度大於第二功函數金屬層的厚度,第一功函數以約50-80電子伏特範圍中的量比第二功函數更接近中間能帶隙。
在一實施例中,第一半導體裝置的閘極電極具有的閘極長度不同於第二半導體裝置的閘極電極的閘極長度。
在一實施例中,第一及第二半導體裝置都是鰭式FET或三閘極裝置。
在實施例中,系統晶片(SoC)積體電路包含配置在基板上方的N型I/O電晶體,N型I/O電晶體包含具有第
一功函數及第一閘極長度之閘極電極。N型邏輯電晶體配置在基板上方,N型邏輯電晶體包含具有第二較低的功函數及具有小於第一閘極長度的第二閘極長度之閘極電極。
在一實施例中,具有第一功函數的閘極電極包含具有厚度之第一功函數金屬層,具有第二功函數的閘極電極包含具有厚度之第二功函數金屬層,以及,第一功函數金屬層的厚度大於第二功函數金屬層的厚度。
在一實施例中,具有第一功函數的閘極電極包含具有總材料成分之第一功函數金屬層,具有第二功函數的閘極電極包含具有總材料成分之第二功函數金屬層,以及,第一功函數金屬層的總材料成分不同於第二功函數金屬層的總材料成分。
在一實施例中,具有第一功函數的閘極電極包含具有總材料成分及厚度之第一功函數金屬層,具有第二功函數的閘極電極包含具有總材料成分及厚度之第二功函數金屬層,以及,第一功函數金屬層的總材料成分及厚度不同於第二功函數金屬層的總材料成分及厚度。
在一實施例中,第一功函數以約50-80電子伏特範圍中的量比第二功函數更接近中間能帶隙。
在一實施例中,第一及第二半導體裝置都是鰭式FET或主閘極裝置。
在實施例中,製造半導體結構的方法涉及在基板上方形成第一半導體鰭部及第二半導體鰭部。方法也涉及在第一半導體鰭部上形成具有第一間距的第一眾多閘極結構以
及在第二半導體鰭部上形成具有第二較窄的間距的第二眾多閘極結構,第一及第二眾多閘極結構都包含具有N型或P型的第一功函數金屬層。方法也涉及將第一眾多閘極結構中之具有該N型或P型的該第一功函數金屬層以具有該N型或P型的第二功函數金屬層置換,但不將第二眾多閘極結構中之具有該N型或P型的該第一功函數金屬層置換。
在一實施例中,形成第一眾多閘極結構及第二眾多閘極結構涉及使用置換閘極技術。
在一實施例中,其中該置換閘極技術,例如將具有N型或P型的第一功函數金屬層以具有N型或P型的第二功函數金屬層置換的步驟涉及遮罩第二眾多閘極結構中部份具有N型或P型的第一功函數金屬層,但不遮罩第一眾多閘極結構中部份具有N型或P型的第一功函數金屬層。
在一實施例中,遮罩第二眾多閘極結構中部份具有N型或P型的第一功函數金屬層涉及形成及蝕刻碳硬遮罩。在第二眾多閘極結構中碳硬遮罩的蝕刻速率比第一眾多閘極結構中碳硬遮罩的蝕刻速率更慢。
在一實施例中,將具有N型或P型的第一功函數金屬層以具有N型或P型的第二功函數金屬層置換的步驟涉及蝕刻具有N型或P型的第一功函數金屬層,以及形成厚度比具有N型或P型的第一功函數金屬層的厚度更大的具有N型或P型的第二功函數金屬層。
在一實施例中,方法又涉及以第一半導體鰭部及第一眾多閘極結構形成I/O電晶體。方法也涉及以第二半導體鰭部及第二眾多閘極結構形成邏輯電晶體。
在一實施例中,形成I/O電晶體涉及形成N型I/O電晶體,以及形成邏輯電晶體涉及形成N型邏輯電晶體。
210、212、214:閘極電極區
220、222、224:閘極電極區
240:第二功函數金屬層
218:功函數金屬層
230’:介電區
Claims (7)
- 一種積體電路結構,包含:第一N型鰭式FET裝置,具有第一鰭部,該第一N型鰭式FET裝置包含第一閘極電極,該第一閘極電極具有含有成分的第一功函數金屬層,該第一功函數金屬層具有第一厚度;以及第二N型鰭式FET裝置,具有第二鰭部,該第二N型鰭式FET裝置包含第二閘極電極,該第二閘極電極具有含有成分的第二功函數金屬層,該第二功函數金屬層具有大於該第一厚度之第二厚度,其中,該第二N型鰭式FET裝置之該第二閘極電極具有閘極長度,其大於該第一N型鰭式FET裝置之該第一閘極電極之閘極長度。
- 如請求項1之積體電路結構,其中,該第一N型鰭式FET裝置是邏輯電晶體,以及該第二N型鰭式FET裝置是I/O電晶體。
- 如請求項1之積體電路結構,更包含:介於該第一鰭部與該第一閘極電極之間的第一閘極介電質;以及介於該第二鰭部與該第二閘極電極之間的第二閘極介電質。
- 如請求項3之積體電路結構,其中,該第一閘極介電質及該第二閘極介電質包含鉿及氧。
- 如請求項1之積體電路結構,其中,該第一功函數金屬層及該第二功函數金屬層包含鋁。
- 如請求項1之積體電路結構,其中,該第一功函數金屬層及該第二功函數金屬層包含鈦。
- 如請求項1之積體電路結構,其中,該第一功函數金屬層及該第二功函數金屬層包含金屬碳化物。
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TW110128071A TWI767809B (zh) | 2013-09-27 | 2014-09-25 | 半導體結構及系統晶片(SoC)積體電路及其製造方法 |
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