TW202414071A - Reflective member for euv lithography - Google Patents
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Abstract
Description
本發明係關於一種反射部件、一種包括反射部件之微影設備、一種製造裝置之包括使用反射部件的方法、一種EUV遮罩、一種包括EUV遮罩之微影設備及一種製造裝置之包括使用EUV遮罩的方法。The present invention relates to a reflective component, a lithography device including the reflective component, a method for manufacturing a device including the use of the reflective component, an EUV mask, a lithography device including the EUV mask, and a method for manufacturing a device including the use of the EUV mask.
微影設備為將所要圖案塗佈至基板上，通常塗佈至基板之目標部分上之機器。微影設備可用於例如積體電路(IC)之製造中。在彼情況下，圖案化裝置(其替代地稱為遮罩或倍縮光罩)可用於產生待形成於IC之個別層上的電路圖案。此圖案可轉印至基板(例如，矽晶圓)上之目標部分(例如，包含晶粒之部分、一個晶粒或數個晶粒)上。通常經由成像至提供於基板上之輻射敏感材料(抗蝕劑)層上來進行圖案之轉印。一般而言，單一基板將含有經順次地圖案化之鄰近目標部分之網路。A lithographic apparatus is a machine that applies a desired pattern onto a substrate, typically onto a target portion of the substrate. Lithographic apparatus may be used, for example, in the manufacture of integrated circuits (ICs). In that case, a patterning device (which is alternatively referred to as a mask or reticle) may be used to produce a circuit pattern to be formed on individual layers of the IC. This pattern may be transferred onto a target portion (e.g., a portion comprising a die, a die, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically performed by imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of sequentially patterned adjacent target portions.
微影被廣泛地認為是在IC及其他裝置及/或結構之製造中之關鍵步驟中之一者。然而，隨著使用微影所製得之特徵的尺寸變得愈來愈小，微影正變為用於使得能夠製造小型IC或其他裝置及/或結構之更具決定性的因素。Lithography is widely recognized as one of the key steps in the fabrication of ICs and other devices and/or structures. However, as the size of features produced using lithography becomes smaller and smaller, lithography is becoming a more decisive factor in enabling the fabrication of small ICs or other devices and/or structures.
圖案印刷極限之理論估計可藉由瑞立(Rayleigh)解析度準則給出，如等式(1)中所展示： 其中λ為所使用輻射之波長，NA為用於印刷圖案之投影系統的數值孔徑，k1為程序相依調整因數(亦稱為瑞立常數)，且CD為經印刷特徵之特徵大小(或關鍵尺寸)。自等式(1)可見，可以三種方式來獲得特徵之最小可印刷大小之縮減：藉由縮短曝光波長λ、藉由增加數值孔徑NA，或藉由減小k1之值。 Theoretical estimates of the pattern printing limit can be given by the Rayleigh resolution criterion, as shown in equation (1): where λ is the wavelength of the radiation used, NA is the numerical aperture of the projection system used to print the pattern, k1 is a process-dependent adjustment factor (also called the Rayleigh constant), and CD is the feature size (or critical dimension) of the printed feature. From equation (1), it can be seen that a reduction in the minimum printable size of a feature can be obtained in three ways: by shortening the exposure wavelength λ, by increasing the numerical aperture NA, or by reducing the value of k1.
為了縮短曝光波長且因此減小最小可印刷大小，已提議使用極紫外線(EUV)輻射源。EUV輻射為具有在10 nm至20 nm範圍內(例如，在13 nm至14 nm範圍內)之波長之電磁輻射。已進一步提議可使用具有小於10 nm (例如，在5 nm至10 nm範圍內，諸如6.7 nm或6.8 nm)之波長之EUV輻射。此輻射被稱為極紫外線輻射或軟x射線輻射。舉例而言，可能之源包括雷射產生電漿源、放電電漿源，或基於由電子儲存環提供之同步加速器輻射之源。In order to shorten the exposure wavelength and thus reduce the minimum printable size, it has been proposed to use an extreme ultraviolet (EUV) radiation source. EUV radiation is electromagnetic radiation having a wavelength in the range of 10 nm to 20 nm, for example in the range of 13 nm to 14 nm. It has further been proposed to use EUV radiation having a wavelength less than 10 nm, for example in the range of 5 nm to 10 nm, such as 6.7 nm or 6.8 nm. This radiation is called extreme ultraviolet radiation or soft x-ray radiation. Possible sources include, for example, laser-generated plasma sources, discharge plasma sources, or sources based on synchrotron radiation provided by electron storage rings.
難以將EUV輻射收集成光束、將其引導至遮罩上及將經圖案化光束投影至基板上，此係因為製造用於EUV輻射之折射光學元件係不可能的。因此，此等功能必須使用反射器(亦即，鏡面)來執行。通常使用多層反射器(亦稱為分佈式布拉格反射器)，其包含成對地配置之數個層(亦稱為週期)。各對包含相對高折射率層及相對低折射率層。在層之間的各界面處，反射行進通過多層反射器之輻射之一部分。各對之厚度經組態使得在各界面處反射之輻射之間存在相長干擾。用於反射EUV輻射之多層反射器之反射率通常為大約70%。在微影設備中，可能存在於EUV源與基板之間串聯使用之許多多層反射器。因此，到達基板之輻射量可為所產生EUV輻射之小百分比。It is difficult to collect EUV radiation into a beam, direct it onto a mask, and project the patterned beam onto a substrate because it is impossible to manufacture refractive optical elements for EUV radiation. Therefore, these functions must be performed using reflectors (i.e., mirrors). Multilayer reflectors (also called distributed Bragg reflectors) are commonly used, which include several layers (also called periods) arranged in pairs. Each pair includes a relatively high refractive index layer and a relatively low refractive index layer. At each interface between the layers, a portion of the radiation traveling through the multilayer reflector is reflected. The thickness of each pair is configured so that there is constructive interference between the radiation reflected at each interface. The reflectivity of multilayer reflectors used to reflect EUV radiation is typically about 70%. In a lithography apparatus, there may be many layers of reflectors used in series between the EUV source and the substrate. Therefore, the amount of radiation reaching the substrate may be a small percentage of the EUV radiation generated.
多層反射器可用於遮罩中，除多層堆疊以外，該等遮罩亦包含多層堆疊之頂部表面上的吸收體層。此吸收體層運用待投影至基板上之影像進行圖案化。吸收體層具有一定厚度，因此當輻射以大於零之入射角入射於遮罩上時，如反射遮罩所必要的，發生3D效應，諸如入射輻射至遮罩上之陰影。此導致微影程序中之誤差，諸如圖案置放誤差及線寬誤差。Multi-layer reflectors may be used in masks that, in addition to the multi-layer stack, also include an absorber layer on the top surface of the multi-layer stack. This absorber layer is patterned with an image to be projected onto a substrate. The absorber layer has a certain thickness so that when radiation is incident on the mask at an angle of incidence greater than zero, 3D effects occur, such as shadows of the incident radiation onto the mask, as necessary for reflecting the mask. This leads to errors in the lithography process, such as pattern placement errors and line width errors.
在多層反射器中，有效反射平面可定義為在多層反射器之表面下方於表示多層反射器內之反射之平均深度的深度處之平面。當有效反射平面在多層反射器之表面下方更深時，3D效應(陰影)變得更顯著。In a multi-layer reflector, the effective reflection plane can be defined as a plane below the surface of the multi-layer reflector at a depth representing the average depth of reflections within the multi-layer reflector. As the effective reflection plane is deeper below the surface of the multi-layer reflector, the 3D effect (shadow) becomes more pronounced.
在當前多層反射器中，相對高折射率層通常包含矽(Si)，且相對低折射率層通常包含鉬(Mo)。已提議多層反射器之替代組態，其中相對高折射率層包含Si，且相對低折射率層包含釕(Ru)。Ru-Si多層反射器展現比Mo-Si多層反射器更淺之有效反射平面，因此當其用於遮罩中時，其中展現之3D效應(陰影)小於Mo-Si多層反射器。然而，Ru-Si多層反射器之反射率低於Mo-Si多層反射器之反射率。In current multilayer reflectors, the relatively high refractive index layers typically include silicon (Si), and the relatively low refractive index layers typically include molybdenum (Mo). Alternative configurations of multilayer reflectors have been proposed in which the relatively high refractive index layers include Si and the relatively low refractive index layers include ruthenium (Ru). Ru-Si multilayer reflectors exhibit a shallower effective reflection plane than Mo-Si multilayer reflectors, and therefore exhibit less 3D effects (shadows) than Mo-Si multilayer reflectors when used in masks. However, the reflectivity of Ru-Si multilayer reflectors is lower than that of Mo-Si multilayer reflectors.
本發明之目標為提供一種具有優於當前可用之反射部件之屬性(在當用於EUV遮罩中時之反射率及3D效應方面)的反射部件。An object of the present invention is to provide a reflective component having properties superior to currently available reflective components in terms of reflectivity and 3D effects when used in EUV masks.
在本發明中，提供一種用於一EUV微影設備中之反射部件，該反射部件包含一多層堆疊，該多層堆疊包含成對地配置之複數個層，其中：各對包含一第一層及一第二層；該第一層由包含Si之一材料形成；且該第二層由包含Ru、Nb及Mo中之至少兩者的一材料形成，且其中該第二層經組態以對於具有大約13.5 nm之一波長的光具有小於或等於0.92之一折射率及小於或等於0.015之一吸收係數。In the present invention, a reflective component for use in an EUV lithography device is provided, the reflective component comprising a multi-layer stack, the multi-layer stack comprising a plurality of layers arranged in pairs, wherein: each pair comprises a first layer and a second layer; the first layer is formed of a material comprising Si; and the second layer is formed of a material comprising at least two of Ru, Nb and Mo, and wherein the second layer is configured to have a refractive index less than or equal to 0.92 and an absorption coefficient less than or equal to 0.015 for light having a wavelength of approximately 13.5 nm.
在本發明中，亦提供一種包括一反射部件之微影設備。The present invention also provides a lithography apparatus including a reflective component.
在本發明中，亦提供一種製造一裝置之包括使用一反射部件的方法。In the present invention, a method of manufacturing a device including using a reflective component is also provided.
在本發明中，亦提供一種EUV光罩，其包含： 一基板；一多層堆疊，其包含成對地配置之複數個層；及一封蓋層，其由包含Ru、Nb及Mo中之至少兩者的一材料形成，且其中該封蓋層經組態以對於具有大約13.5 nm之一波長的光具有小於0.92之一折射率及小於0.015之一吸收係數。 In the present invention, an EUV mask is also provided, which includes: a substrate; a multi-layer stack including a plurality of layers arranged in pairs; and a capping layer formed of a material including at least two of Ru, Nb and Mo, and wherein the capping layer is configured to have a refractive index less than 0.92 and an absorption coefficient less than 0.015 for light having a wavelength of about 13.5 nm.
在本發明中，亦提供一種包括一EUV光罩之微影設備。The present invention also provides a lithography apparatus including an EUV mask.
在本發明中，亦提供一種製造裝置之包括使用一EUV光罩的方法。The present invention also provides a method of manufacturing a device including using an EUV mask.
圖1示意性地描繪根據本發明之一實施例的包括源收集器模組SO之微影設備100。設備100包含： - 照明系統(或照明器) IL，其經組態以調節輻射光束B (例如，EUV輻射)； - 支撐結構(例如，遮罩台) MT，其經建構以支撐圖案化裝置(例如，遮罩或倍縮光罩) MA，且連接至經組態以準確地定位圖案化裝置之第一***PM； - 基板台(例如，晶圓台) WT，其經建構以固持基板(例如，經抗蝕劑塗佈晶圓) W，且連接至經組態以準確地定位基板之第二***PW；及 - 投影系統(例如，反射投影系統) PS，其經組態以將由圖案化裝置MA賦予至輻射光束B之圖案投影至基板W之目標部分C (例如，包含一或多個晶粒)上。 FIG. 1 schematically illustrates a lithography apparatus 100 including a source collector module SO according to one embodiment of the present invention. The apparatus 100 comprises: - an illumination system (or illuminator) IL configured to condition a radiation beam B (e.g., EUV radiation); - a support structure (e.g., a mask stage) MT constructed to support a patterning device (e.g., a mask or a reticle) MA and connected to a first positioner PM configured to accurately position the patterning device; - a substrate stage (e.g., a wafer stage) WT constructed to hold a substrate (e.g., an anti-etchant coated wafer) W and connected to a second positioner PW configured to accurately position the substrate; and - a projection system (e.g., a reflective projection system) PS configured to project a pattern imparted to the radiation beam B by the patterning device MA onto a target portion C of the substrate W. (e.g., comprising one or more dies).
照明系統IL可包括用於引導、塑形或控制輻射的各種類型之光學組件，諸如折射、反射、磁性、電磁、靜電或其他類型之光學組件，或其任何組合。The illumination system IL may include various types of optical components for directing, shaping or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof.
支撐結構MT以取決於圖案化裝置MA之定向、微影設備之設計及其他條件(諸如，該圖案化裝置是否被固持於真空環境中)的方式來固持該圖案化裝置。支撐結構MT可使用機械、真空、靜電或其他夾持技術來固持圖案化裝置MA。支撐結構MT可為例如框架或台，其可視需要而固定或可移動。支撐結構MT可確保圖案化裝置MA例如相對於投影系統PS處於所要位置。The support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device MA, the design of the lithography apparatus, and other conditions, such as whether the patterning device is held in a vacuum environment. The support structure MT may use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA. The support structure MT may be, for example, a frame or a table, which may be fixed or movable as desired. The support structure MT may ensure that the patterning device MA is in a desired position, for example relative to the projection system PS.
術語「圖案化裝置」應廣泛地解譯為指可用於在輻射光束B之橫截面中向輻射光束B賦予圖案以便在基板W之目標部分C中產生圖案的任何裝置。被賦予至輻射光束B之圖案可對應於目標部分C中所產生之裝置(諸如，積體電路)中的特定功能層。The term "patterning device" should be broadly interpreted as referring to any device that can be used to impart a pattern to a radiation beam B in its cross-section so as to produce a pattern in a target portion C of a substrate W. The pattern imparted to the radiation beam B may correspond to a particular functional layer in a device (e.g., an integrated circuit) produced in the target portion C.
圖案化裝置之實例包括遮罩、可程式化鏡面陣列及可程式化液晶顯示器(LCD)面板。遮罩在微影中為吾人所熟知，且包括諸如二元、交變相移及衰減相移之遮罩類型，以及各種混合遮罩類型。可程式化鏡面陣列之一實例使用小鏡面之矩陣配置，該等小鏡面中之各者可個別地傾斜，以便使入射輻射光束在不同方向上反射。傾斜鏡面在由鏡面矩陣反射之輻射光束中賦予圖案。Examples of patterning devices include masks, programmable mirror arrays, and programmable liquid crystal display (LCD) panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. One example of a programmable mirror array uses a matrix arrangement of mirror facets, each of which can be individually tilted so as to reflect an incident radiation beam in different directions. The tilted mirrors impart a pattern in the radiation beam that is reflected by the mirror array.
類似於照明系統IL，投影系統PS可包括適於所使用曝光輻射或適於諸如真空之使用之其他因素的各種類型之光學組件，諸如折射、反射、磁性、電磁、靜電或其他類型之光學組件，或其任何組合。可能需要將真空用於EUV輻射，此係由於其他氣體可能吸收過多輻射。因此，可藉助於真空壁及真空泵將真空環境提供至整個光束路徑。Similar to the illumination system IL, the projection system PS may include various types of optical components appropriate to the exposure radiation used or to other factors such as the use of a vacuum, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof. A vacuum may be required for EUV radiation since other gases may absorb too much radiation. Therefore, a vacuum environment may be provided to the entire beam path with the aid of vacuum walls and a vacuum pump.
如此處所描繪，微影設備100屬於反射類型(例如，採用反射遮罩)。As depicted herein, lithography apparatus 100 is of a reflective type (eg, employing a reflective mask).
微影設備100可屬於具有兩個(雙載物台)或更多個基板台WT (及/或兩個或更多個支撐結構MT)之類型。在此「多載物台」微影設備中，可並行地使用額外基板台WT (及/或額外支撐結構MT)，或可在一或多個基板台WT (及/或一或多個支撐結構MT)上進行預備步驟，同時將一或多個其他基板台WT (及/或一或多個其他支撐結構MT)用於曝光。The lithography apparatus 100 may be of a type having two (dual-stage) or more substrate tables WT (and/or two or more supporting structures MT). In such a "multi-stage" lithography apparatus, additional substrate tables WT (and/or additional supporting structures MT) may be used in parallel, or preparatory steps may be performed on one or more substrate tables WT (and/or one or more supporting structures MT) while one or more other substrate tables WT (and/or one or more other supporting structures MT) are being used for exposure.
參考圖1，照明系統IL自源收集器模組SO接收極紫外線輻射光束。用以產生EUV光之方法包括但未必限於運用在EUV範圍內之一或多個發射線而將具有至少一種元素(例如，氙、鋰或錫)之材料轉換成電漿狀態。在一種此方法(常常稱為雷射產生電漿「LPP」)中，可藉由運用雷射光束來輻照燃料(諸如，具有所需線發射元素之材料的小滴、串流或叢集)而產生所需電漿。源收集器模組SO可為包括雷射(圖1中未展示)之EUV輻射系統之部件，該雷射用於提供激發燃料之雷射光束。所得電漿發射輸出輻射(例如，EUV輻射)，該輸出輻射係使用安置於源收集器模組中之輻射收集器予以收集。舉例而言，當使用CO 2雷射來提供用於燃料激發之雷射光束時，雷射及源收集器模組SO可為分離實體。 Referring to FIG. 1 , an illumination system IL receives an extreme ultraviolet radiation beam from a source collector module SO. Methods for generating EUV light include, but are not necessarily limited to, converting a material having at least one element (e.g., xenon, lithium, or tin) into a plasma state using one or more emission lines in the EUV range. In one such method (often referred to as laser produced plasma "LPP"), the desired plasma may be generated by irradiating a fuel (e.g., a droplet, stream, or cluster of material having the desired line emitting element) using a laser beam. The source collector module SO may be a component of an EUV radiation system including a laser (not shown in FIG. 1 ) for providing a laser beam that excites the fuel. The resulting plasma emits output radiation (e.g., EUV radiation) which is collected using a radiation collector disposed in a source collector module. For example, when a CO2 laser is used to provide the laser beam for fuel excitation, the laser and source collector module SO may be separate entities.
在此類情況下，不認為雷射形成微影設備100之部分，且輻射光束B係藉助於包含例如合適引導鏡面及/或擴束器之光束遞送系統而自雷射傳遞至源收集器模組SO。在其他情況下，例如當源為放電產生電漿EUV產生器(常常稱為DPP源)時，該源可為源收集器模組SO之整體部分。In such cases, the laser is not considered to form part of the lithography apparatus 100, and the radiation beam B is delivered from the laser to the source collector module SO by means of a beam delivery system comprising, for example, suitable steering mirrors and/or beam expanders. In other cases, such as when the source is a discharge produced plasma EUV generator (often referred to as a DPP source), the source may be an integral part of the source collector module SO.
照明系統IL可包含用於調整輻射光束之角強度分佈的調整器。通常，可調整照明系統IL之光瞳平面中的強度分佈之至少外部徑向範圍及/或內部徑向範圍(通常分別稱為σ外部及σ內部)。另外，照明系統IL可包含各種其他組件，諸如琢面化場鏡面裝置及琢面化光瞳鏡面裝置。照明系統IL可用於調節輻射光束B，以在其橫截面中具有所要均一性及強度分佈。The illumination system IL may include an adjuster for adjusting the angular intensity distribution of the radiation beam. Typically, at least the outer radial extent and/or the inner radial extent (typically referred to as σ outer and σ inner , respectively) of the intensity distribution in a pupil plane of the illumination system IL may be adjusted. Additionally, the illumination system IL may include various other components, such as a faceted field mirror device and a faceted pupil mirror device. The illumination system IL may be used to adjust the radiation beam B to have a desired uniformity and intensity distribution in its cross-section.
輻射光束B入射於被固持於支撐結構(例如，遮罩台) MT上之圖案化裝置(例如，遮罩) MA上，且藉由圖案化裝置MA進行圖案化。在自圖案化裝置(例如，遮罩) MA反射之後，輻射光束B傳遞通過投影系統PS，該投影系統PS將輻射光束B聚焦至基板W之目標部分C上。藉助於第二***PW及位置感測器PS2 (例如，干涉量測裝置、線性編碼器或電容式感測器)，可準確地移動基板台WT，例如，以便在輻射光束B之路徑中定位不同目標部分C。類似地，第一***PM及另一位置感測器PS1可用於相對於輻射光束B之路徑而準確地定位圖案化裝置(例如，遮罩) MA。可使用遮罩對準標記M1、M2及基板對準標記P1、P2來對準圖案化裝置(例如，遮罩) MA及基板W。A radiation beam B is incident on a patterning device (e.g., mask) MA held on a support structure (e.g., mask table) MT and is patterned by the patterning device MA. After reflection from the patterning device (e.g., mask) MA, the radiation beam B passes through a projection system PS which focuses the radiation beam B onto a target portion C of a substrate W. With the aid of a second positioner PW and a position sensor PS2 (e.g., an interferometric measurement device, a linear encoder or a capacitive sensor), the substrate table WT can be accurately moved, for example, in order to position different target portions C in the path of the radiation beam B. Similarly, a first positioner PM and a further position sensor PS1 can be used to accurately position the patterning device (e.g., mask) MA relative to the path of the radiation beam B. The patterning device (eg, mask) MA and the substrate W may be aligned using the mask alignment marks M1, M2 and the substrate alignment marks P1, P2.
控制器500控制微影設備100之總操作，且尤其執行下文進一步所描述之操作程序。控制器500可體現為經合適程式化之通用電腦，其包含中央處理單元、揮發性儲存構件及非揮發性儲存構件、一或多個輸入及輸出裝置(諸如，鍵盤及螢幕)、一或多個網路連接件，及至微影設備100之各種部分之一或多個介面。應瞭解，控制電腦與微影設備100之間的一對一關係係不必要的。在本發明之一實施例中，一個電腦可控制多個微影設備100。在本發明之一實施例中，多個網路化電腦可用於控制一個微影設備100。控制器500亦可經組態以控制微影單元或叢集中之一或多個關聯程序裝置及基板處置裝置，微影設備100形成微影單元或叢集之一部分。控制器500亦可經組態為從屬於微影單元或叢集之監督控制系統及/或工廠(fab)之總控制系統。The controller 500 controls the overall operation of the lithography apparatus 100, and in particular executes the operating procedures further described below. The controller 500 can be embodied as a suitably programmed general-purpose computer, which includes a central processing unit, volatile storage components and non-volatile storage components, one or more input and output devices (such as a keyboard and a screen), one or more network connections, and one or more interfaces to various parts of the lithography apparatus 100. It should be understood that a one-to-one relationship between the control computer and the lithography apparatus 100 is not necessary. In one embodiment of the present invention, one computer can control multiple lithography apparatuses 100. In one embodiment of the present invention, multiple networked computers can be used to control one lithography apparatus 100. The controller 500 may also be configured to control one or more associated process devices and substrate handling devices in a lithography unit or cluster of which the lithography apparatus 100 forms a part. The controller 500 may also be configured as a supervisory control system subordinate to the lithography unit or cluster and/or the overall control system of a fab.
圖2更詳細地展示微影設備100，其包括源收集器模組SO、照明系統IL及投影系統PS。EUV輻射發射電漿210可由電漿源形成。可藉由氣體或蒸氣(例如，Xe氣體、Li蒸氣或Sn蒸氣)而產生EUV輻射，其中產生輻射發射電漿210以發射在電磁光譜之EUV範圍內之輻射。在一實施例中，提供經激發錫(Sn)電漿以產生EUV輻射。FIG2 shows the lithography apparatus 100 in more detail, which includes a source collector module SO, an illumination system IL, and a projection system PS. An EUV radiation emitting plasma 210 may be formed by a plasma source. EUV radiation may be generated by a gas or vapor (e.g., Xe gas, Li vapor, or Sn vapor), wherein the radiation emitting plasma 210 is generated to emit radiation in the EUV range of the electromagnetic spectrum. In one embodiment, an excited tin (Sn) plasma is provided to generate EUV radiation.
由輻射發射電漿210發射之輻射自源腔室211傳遞至收集器腔室212中。Radiation emitted by radiation emitting plasma 210 is transmitted from source chamber 211 to collector chamber 212.
收集器腔室212可包括輻射收集器CO。橫穿輻射收集器CO之輻射可聚焦於虛擬源點IF中。虛擬源點IF通常稱為中間焦點，且源收集器模組SO經配置以使得虛擬源點IF位於圍封結構220中之開口221處或附近。虛擬源點IF為輻射發射電漿210之影像。The collector chamber 212 may include a radiation collector CO. Radiation traversing the radiation collector CO may be focused into a virtual source point IF. The virtual source point IF is often referred to as an intermediate focus, and the source collector module SO is configured such that the virtual source point IF is located at or near an opening 221 in the enclosure 220. The virtual source point IF is an image of the radiation emitting plasma 210.
隨後，輻射橫穿照明系統IL，該照明系統IL可包括琢面化場鏡面裝置22及琢面化光瞳鏡面裝置24，該琢面化場鏡面裝置22及該琢面化光瞳鏡面裝置24經配置以提供在圖案化裝置MA處未經圖案化光束21之所要角度分佈，以及在圖案化裝置MA處輻射強度之所要均一性。在由支撐結構MT固持之圖案化裝置MA處的未經圖案化光束21之反射後，形成經圖案化光束26，且由投影系統PS經由反射元件28、30將經圖案化光束26成像至由基板台WT固持之基板W上。The radiation then traverses the illumination system IL which may include a faceted field mirror device 22 and a faceted pupil mirror device 24 which are configured to provide a desired angular distribution of the unpatterned light beam 21 at the patterning device MA, and a desired uniformity of the radiation intensity at the patterning device MA. After reflection of the unpatterned light beam 21 at the patterning device MA held by the support structure MT, a patterned light beam 26 is formed and is imaged by the projection system PS via reflective elements 28, 30 onto a substrate W held by a substrate table WT.
比所展示元件更多之元件可通常存在於照明系統IL及投影系統PS中。此外，可存在比諸圖中所展示之鏡面更多的鏡面，例如，在投影系統PS中可存在比圖2中所展示之反射元件多1至6個的額外反射元件。More elements than those shown may typically be present in the illumination system IL and the projection system PS. Furthermore, there may be more mirrors than shown in the figures, for example, there may be 1 to 6 additional reflective elements in the projection system PS than those shown in FIG. 2 .
替代地，源收集器模組SO可為LPP輻射系統之部分。Alternatively, the source collector module SO may be part of an LPP radiation system.
如圖1中所描繪，在一實施例中，微影設備100包含照明系統IL及投影系統PS。照明系統IL經組態以發射輻射光束B。投影系統PS藉由介入空間而與基板台WT分離。投影系統PS經組態以將賦予至輻射光束B之圖案投影至基板W上。該圖案係用於輻射光束B之EUV輻射。As depicted in FIG1 , in one embodiment, a lithography apparatus 100 includes an illumination system IL and a projection system PS. The illumination system IL is configured to emit a radiation beam B. The projection system PS is separated from a substrate table WT by an intervening space. The projection system PS is configured to project a pattern imparted to the radiation beam B onto a substrate W. The pattern is for EUV radiation of the radiation beam B.
可至少部分地抽空介入於投影系統PS與基板台WT之間的空間。可在投影系統PS之位置處由固體表面定界介入空間，所採用輻射係自該固體表面朝向基板台WT引導。The space intervening between the projection system PS and the substrate table WT may be at least partially evacuated. The intervening space may be delimited at the location of the projection system PS by a solid surface from which the employed radiation is directed towards the substrate table WT.
圖3描繪在EUV微影設備內可用於將所需圖案賦予至輻射光束之遮罩300。遮罩300為本發明之反射部件之一個實例。3 depicts a mask 300 that can be used to impart a desired pattern to a radiation beam in an EUV lithography apparatus. Mask 300 is an example of a reflective component of the present invention.
圖3中所展示之遮罩300包括基板310、多層堆疊320、封蓋層330及吸收體層340。基板310為提供用於製造多層堆疊320之起點的組件。本文中所揭示之反射部件可與已知適合於熟習此項技術者的基板310之任何組成物一起採用。舉例而言，基板310可由氧化矽及氧化鈦(SiO2-TiO2)形成。一般而言，基板310由多層堆疊320之材料所黏附之材料形成。基板310之表面可經研磨以形成光滑平坦表面，從而改良多層堆疊320之材料對基板310之黏附性。The mask 300 shown in FIG. 3 includes a substrate 310, a multi-layer stack 320, a capping layer 330, and an absorber layer 340. The substrate 310 is a component that provides a starting point for manufacturing the multi-layer stack 320. The reflective components disclosed herein may be employed with any composition of substrate 310 known to those skilled in the art. For example, the substrate 310 may be formed of silicon oxide and titanium oxide (SiO2-TiO2). Generally, the substrate 310 is formed of a material to which the material of the multi-layer stack 320 adheres. The surface of the substrate 310 may be polished to form a smooth, flat surface to improve the adhesion of the material of the multi-layer stack 320 to the substrate 310.
多層堆疊320由成對321配置之複數個層322、323形成。各對包含相對高折射率層322及相對低折射率層323。亦即，在垂直於多層堆疊之上部表面的方向上移動通過多層堆疊320，材料自相對高折射率層322之材料改變為相對低折射率323之材料。在層之間的各界面處(亦即，在多層堆疊中EUV輻射自相對低折射率層323移動至相對高折射率層322或自相對高折射率層322移動至相對低折射率層323之點處)，反射輻射之一部分。多層堆疊320中之各層322、323之厚度經組態以使得當光在多層堆疊320中之不同層322、323之間的界面中之各者處反射時，經反射光束為同相的。此意謂來自界面中之各者之反射建設性地彼此干擾以形成經反射光束。The multilayer stack 320 is formed of a plurality of layers 322, 323 arranged in pairs 321. Each pair includes a relatively high refractive index layer 322 and a relatively low refractive index layer 323. That is, moving through the multilayer stack 320 in a direction perpendicular to the upper surface of the multilayer stack, the material changes from the material of the relatively high refractive index layer 322 to the material of the relatively low refractive index 323. At each interface between the layers (that is, at a point in the multilayer stack where EUV radiation moves from a relatively low refractive index layer 323 to a relatively high refractive index layer 322 or from a relatively high refractive index layer 322 to a relatively low refractive index layer 323), a portion of the radiation is reflected. The thickness of each layer 322, 323 in the multilayer stack 320 is configured so that when light reflects at each of the interfaces between different layers 322, 323 in the multilayer stack 320, the reflected light beams are in phase. This means that the reflections from each of the interfaces constructively interfere with each other to form the reflected light beams.
在當前多層堆疊320中，多層堆疊320中之對之數目可在40與50之間。層322、323中之各者可藉由中間薄膜(未展示)分離以防止互混及矽化物形成。中間層可例如由碳化硼(B 4C)形成。如上文所陳述，各層之厚度係根據在各界面處反射之光束建設性地干擾之條件而判定，其取決於輻射之波長，如熟習此項技術者將已知的。作為一實例，相對高折射率層322可具有3 nm與5 nm之間的厚度，且相對低折射率層323可具有2 nm與4 nm之間的厚度。 In the present multilayer stack 320, the number of pairs in the multilayer stack 320 may be between 40 and 50. Each of the layers 322, 323 may be separated by an intermediate film (not shown) to prevent intermixing and silicide formation. The intermediate layer may be formed, for example, of boron carbide ( B4C ). As stated above, the thickness of each layer is determined according to the conditions under which the light beams reflected at each interface interfere constructively, which depends on the wavelength of the radiation, as will be known to those skilled in the art. As an example, the relatively high refractive index layer 322 may have a thickness between 3 nm and 5 nm, and the relatively low refractive index layer 323 may have a thickness between 2 nm and 4 nm.
封蓋層330可位於多層堆疊320之上部表面上。封蓋層330經提供以改良多層堆疊320之耐久性及化學穩定性。本文中所揭示之反射部件可與已知適合於熟習此項技術者之任何封蓋層330一起採用。作為一實例，封蓋層之材料可與相對高折射率層322之材料或相對低折射率層323之材料相同。The capping layer 330 may be located on the upper surface of the multi-layer stack 320. The capping layer 330 is provided to improve the durability and chemical stability of the multi-layer stack 320. The reflective components disclosed herein may be used with any capping layer 330 known to those skilled in the art. As an example, the material of the capping layer may be the same as the material of the relatively high refractive index layer 322 or the material of the relatively low refractive index layer 323.
吸收體層340可位於封蓋層330之上部表面上。吸收體層340可包含單一材料層或多個材料層。吸收體層340經組態以吸收入射輻射。因此，在經組態用於EUV微影設備中之遮罩中，吸收體層340之材料為吸收EUV輻射之材料。本文中所揭示之反射部件可與已知為適合於熟習此項技術者之任何組成物之吸收體層340一起採用。舉例而言，吸收體340之材料可由包含氮化鉭(TaN)或氮化鉭硼(Ta-B-N)之材料形成，且吸收體層340之總厚度可在50 nm與70 nm之間。替代地，吸收體層340可由包含鎳(Ni)之材料形成，且吸收體層340之總厚度可在25 nm與35 nm之間。The absorber layer 340 may be located on the upper surface of the capping layer 330. The absorber layer 340 may include a single material layer or multiple material layers. The absorber layer 340 is configured to absorb incident radiation. Therefore, in a mask configured for use in an EUV lithography apparatus, the material of the absorber layer 340 is a material that absorbs EUV radiation. The reflective components disclosed herein may be employed with an absorber layer 340 of any composition known to be suitable for one skilled in the art. For example, the material of the absorber 340 may be formed of a material including tantalum nitride (TaN) or tantalum boron nitride (Ta-B-N), and the total thickness of the absorber layer 340 may be between 50 nm and 70 nm. Alternatively, the absorber layer 340 may be formed of a material including nickel (Ni), and the total thickness of the absorber layer 340 may be between 25 nm and 35 nm.
吸收體層340可以使得其含有待投影至基板之感光性薄膜上之影像的方式進行圖案化。亦即，吸收體層340可覆蓋封蓋層330之表面上的一些區，但不覆蓋其他區。換言之，可暴露封蓋層330之一些區，但不暴露其他區。在操作中，EUV輻射係在不存在吸收體層340之區處藉由遮罩300反射，且在存在吸收體層340之區中被吸收。吸收體層340可最初形成於封蓋層330上，使得其覆蓋封蓋層330之全部。可接著使用諸如電子束微影及任何已知蝕刻製程之技術來在吸收體層340中形成圖案。The absorber layer 340 can be patterned in such a way that it contains an image to be projected onto the photosensitive film of the substrate. That is, the absorber layer 340 can cover some areas on the surface of the capping layer 330, but not other areas. In other words, some areas of the capping layer 330 can be exposed, but not other areas. In operation, EUV radiation is reflected by the mask 300 in areas where the absorber layer 340 is not present, and is absorbed in areas where the absorber layer 340 is present. The absorber layer 340 can be initially formed on the capping layer 330 so that it covers all of the capping layer 330. Techniques such as electron beam lithography and any known etching process can then be used to form a pattern in the absorber layer 340.
經組態用於EUV微影設備中之遮罩(諸如，遮罩300)可藉由諸如物理氣相沈積(PVD)、電子束沈積(EBD)或化學氣相沈積(CVD)之製程逐層地形成。A mask configured for use in an EUV lithography apparatus (eg, mask 300 ) may be formed layer by layer by processes such as physical vapor deposition (PVD), electron beam deposition (EBD), or chemical vapor deposition (CVD).
入射於遮罩(諸如，遮罩300)上之EUV輻射通常自大於零之入射角(入射光束與垂直於入射點處之表面之線之間的角度)接近遮罩300。此使得經反射光束沿著與入射光束不同之路徑行進。在微影設備中，入射於遮罩300上之EUV輻射光束之入射角可與法線介於1˚與10˚之間。舉例而言，入射角可為6˚。由於吸收體層340在封蓋層330上方之高度及入射角大於零，因此出現遮罩300之經曝光區之非所要陰影。此陰影係在藉由吸收體層340阻擋入射EUV輻射到達遮罩300之上部表面的經曝光區之情況下，或在藉由吸收體層340防止經反射輻射自遮罩300向外行進時出現。此陰影可引起顯著誤差，諸如圖案置放誤差及線寬誤差。隨著遮罩300上之入射角之增加及吸收體層340之厚度之增加，由陰影引起之誤差變得更顯著。當有效反射平面(多層反射器之表面下方的表示多層反射器內之反射之平均深度的平面)變得更深時，由陰影引起之誤差亦變得更顯著。圖4繪示兩個有效反射平面431、432。有效反射平面在多層堆疊320中之深度取決於相對高折射率層322及相對低折射率層323之材料。具體地，有效反射平面之深度取決於相對高折射率層322及相對低折射率層323之折射率。有效反射平面432比有效反射平面431更深。當入射EUV輻射光束410自較淺有效反射平面431反射時，經反射光束421未受到吸收體層340阻礙且能夠行進遠離遮罩300。然而，當入射光束410在較深有效反射平面432處反射時，經反射光束422受到吸收體層340阻礙，且經反射光束無法行進遠離遮罩300。EUV radiation incident on a mask (e.g., mask 300) typically approaches mask 300 from an angle of incidence (the angle between the incident beam and a line perpendicular to the surface at the point of incidence) greater than zero. This causes the reflected beam to travel along a different path than the incident beam. In a lithography apparatus, the angle of incidence of the EUV radiation beam incident on mask 300 can be between 1° and 10° from the normal. For example, the angle of incidence can be 6°. Due to the height of the absorber layer 340 above the capping layer 330 and the angle of incidence being greater than zero, undesirable shadowing of the exposed areas of mask 300 occurs. This shading occurs when incident EUV radiation is blocked from reaching exposed areas of the upper surface of the mask 300 by the absorber layer 340, or when reflected radiation is prevented from traveling outward from the mask 300 by the absorber layer 340. This shading can cause significant errors, such as pattern placement errors and line width errors. Errors caused by shading become more significant as the angle of incidence on the mask 300 increases and the thickness of the absorber layer 340 increases. Errors caused by shading also become more significant as the effective reflection plane (the plane below the surface of the multi-layer reflector that represents the average depth of reflections within the multi-layer reflector) becomes deeper. Figure 4 shows two effective reflection planes 431, 432. The depth of the effective reflection plane in the multi-layer stack 320 depends on the materials of the relatively high refractive index layer 322 and the relatively low refractive index layer 323. Specifically, the depth of the effective reflection plane depends on the refractive index of the relatively high refractive index layer 322 and the relatively low refractive index layer 323. The effective reflection plane 432 is deeper than the effective reflection plane 431. When the incident EUV radiation beam 410 is reflected from the shallower effective reflection plane 431, the reflected beam 421 is not blocked by the absorber layer 340 and can travel far away from the shield 300. However, when the incident beam 410 is reflected at the deeper effective reflection plane 432, the reflected beam 422 is blocked by the absorber layer 340, and the reflected beam cannot travel far away from the shield 300.
在典型多層堆疊320中，相對高折射率層可由包含矽(Si)之材料形成，且相對低折射率層可由包含鉬(Mo)之材料形成。近年來，已提議相對低折射率層可替代地由包含釕(Ru)之材料形成。Ru-Si多層堆疊可展現深度小於Mo-Si多層堆疊之有效反射平面的有效反射平面。舉例而言，在圖4中，有效反射平面431可為Ru-Si多層堆疊300之有效反射平面，且有效反射平面432可為Mo-Si多層堆疊之有效反射平面。對於Ru-Si多層堆疊320，有效反射平面431可在多層堆疊320之表面下方大約33 nm。對於Mo-Si多層堆疊320，有效反射平面432可在多層堆疊320之表面下方大約45 nm。Ru-Si多層堆疊320之較淺有效反射平面431意謂由陰影引起之誤差不太顯著。然而，Ru-Si多層堆疊320之總反射率可比Mo-Si多層堆疊320之反射率小大約5%。反射率被定義為在界面處反射之能量分率(等式(2))。反射率之此減小對應於產出量損失。 R =反射率；E i=入射光束之能量；E r=經反射光束之能量 In a typical multilayer stack 320, the relatively high refractive index layers may be formed of a material comprising silicon (Si), and the relatively low refractive index layers may be formed of a material comprising molybdenum (Mo). In recent years, it has been proposed that the relatively low refractive index layers may alternatively be formed of a material comprising ruthenium (Ru). A Ru-Si multilayer stack may exhibit an effective reflection plane that is less deep than the effective reflection plane of a Mo-Si multilayer stack. For example, in FIG. 4, effective reflection plane 431 may be the effective reflection plane of the Ru-Si multilayer stack 300, and effective reflection plane 432 may be the effective reflection plane of the Mo-Si multilayer stack. For the Ru-Si multilayer stack 320, the effective reflection plane 431 may be approximately 33 nm below the surface of the multilayer stack 320. For the Mo-Si multilayer stack 320, the effective reflection plane 432 may be approximately 45 nm below the surface of the multilayer stack 320. The shallower effective reflection plane 431 of the Ru-Si multilayer stack 320 means that the error caused by shading is less significant. However, the total reflectivity of the Ru-Si multilayer stack 320 may be approximately 5% less than the reflectivity of the Mo-Si multilayer stack 320. Reflectivity is defined as the fraction of energy reflected at the interface (Equation (2)). This reduction in reflectivity corresponds to a loss in throughput. R = reflectivity; E i = energy of incident beam; Er = energy of reflected beam
在整個以下描述中，參考折射率(n)及吸收係數(k)之值。量測給定材料之此類值的方法不受特別限制。折射率(n)及吸收係數(k)之值可根據反射率及入射角之經量測值來判定。具體地，折射率(n)及吸收係數(k)之值可藉由擬合曲線與反射率及入射角之經量測值的曲線來判定。反射率及角度之量測可利用塗佈有材料之基板進行，折射率(n)及吸收係數(k)之值將針對該材料判定。基板可為矽晶圓或遮罩板。材料塗層之厚度可在30 nm與50 nm之間。Throughout the following description, reference is made to values of the refractive index (n) and the absorption coefficient (k). The method of measuring such values for a given material is not particularly limited. The values of the refractive index (n) and the absorption coefficient (k) can be determined based on measured values of the reflectivity and the angle of incidence. Specifically, the values of the refractive index (n) and the absorption coefficient (k) can be determined by fitting a curve to a curve of measured values of the reflectivity and the angle of incidence. The measurement of the reflectivity and angle can be performed using a substrate coated with the material for which the values of the refractive index (n) and the absorption coefficient (k) will be determined. The substrate can be a silicon wafer or a mask plate. The thickness of the material coating can be between 30 nm and 50 nm.
替代地，折射率(n)及吸收係數(k)之值可根據使用干涉儀進行之量測來判定。作為一實例，折射率(n)及吸收係數(k)之值可使用振幅分割透射干涉儀來量測。此可涉及判定干涉圖之相移(φ)及可見度(V)。量測折射率(n)及吸收係數(k)之方法在以下公開案中給出： CHANG, Chang; ANDERSON, Erik; NAULLEAU, Patrick. Direct index of refraction measurement at extreme ultraviolet wavelength region with a novel interferometer. Optical Letters, 2001, 27(12)。 Alternatively, the values of the refractive index (n) and the absorption coefficient (k) can be determined based on measurements performed using an interferometer. As an example, the values of the refractive index (n) and the absorption coefficient (k) can be measured using an amplitude division transmission interferometer. This can involve determining the phase shift (φ) and visibility (V) of the interference pattern. Methods for measuring the refractive index (n) and the absorption coefficient (k) are given in the following publications: CHANG, Chang; ANDERSON, Erik; NAULLEAU, Patrick. Direct index of refraction measurement at extreme ultraviolet wavelength region with a novel interferometer . Optical Letters, 2001, 27(12).
此方法可用於量測本發明中所定義之折射率(n)及吸收係數(k)。在該方法中使用之設備可包含：輻射源；小直徑孔，其用以提供空間相干輻射；繞射光柵，其用於自針孔有效地產生多個虛擬源；區域板，其使形成於繞射光柵處之虛擬源成像至遮罩所在之平面；遮罩，其包含允許零階及一階光點通過之兩個開口；及敏感CCD攝影機。在該方法中，將測試材料移入及移出遮罩中之開口中之一者，且CCD攝影機記錄所得干涉圖。This method can be used to measure the refractive index (n) and absorption coefficient (k) defined in the present invention. The apparatus used in the method may include: a radiation source; a small diameter hole, which is used to provide spatially coherent radiation; a diffraction grating, which is used to effectively generate multiple virtual sources from the pinhole; an area plate, which images the virtual sources formed at the diffraction grating to the plane where the mask is located; a mask, which includes two openings that allow zero-order and first-order light spots to pass through; and a sensitive CCD camera. In the method, the test material is moved into and out of one of the openings in the mask, and the CCD camera records the resulting interference pattern.
當測試材料存在於開口中之一者中時，干涉圖之條紋根據測試材料之折射屬性而移位。相移(φ)為干涉圖之兩個獨立重建構之相位映圖之間的差。折射率(n)可接著使用等式(3)計算，其中λ為波長且t為樣本之厚度。 When a test material is present in one of the openings, the fringes of the interference pattern shift according to the refractive properties of the test material. The phase shift (φ) is the difference between the phase maps of two independent reconstructions of the interference pattern. The refractive index (n) can then be calculated using equation (3), where λ is the wavelength and t is the thickness of the sample.
經由樣本傳播之後的相對光學強度(α)藉由等式(4)與干涉圖之所觀察可見度(V)相關。 The relative optical intensity (α) after propagation through the sample is related to the observed visibility (V) of the interference pattern by equation (4).
根據相對光學強度(α)，吸收係數(k)可使用等式(5)計算。 Based on the relative optical intensity (α), the absorption coefficient (k) can be calculated using equation (5).
表1給出元素Ru、Mo、鈮(Nb)及含有彼等三種元素之數個合金在大約13.5 nm之波長內的折射率(n)及吸收係數(k)。
表 1
多層堆疊320之反射率取決於形成層322、323之材料的吸收係數。Ru具有比Mo (k=0.0064)更高之吸收係數(k=0.0171)，此解釋了Mo-Si多層堆疊320之反射率為何大於Ru-Si多層堆疊320之反射率。有效反射平面之深度(z eff)取決於相對高折射率層322與相對低折射率層323之間的折射率(n)之差。此係因為相對高折射率層322與相對低折射率層323之間的折射率(n)之較大差導致多層堆疊320之較寬反射率帶(反射率相對較高之波長範圍)。較寬反射率帶導致較低群延遲(τ)。有效反射平面之近似深度(z eff)與群延遲(τ)成比例，如等式(6)中所展示。因此，較寬反射率帶導致有效反射平面之較淺深度。 The reflectivity of the multilayer stack 320 depends on the absorption coefficient of the materials forming the layers 322, 323. Ru has a higher absorption coefficient (k=0.0171) than Mo (k=0.0064), which explains why the reflectivity of the Mo-Si multilayer stack 320 is greater than the reflectivity of the Ru-Si multilayer stack 320. The depth of the effective reflection plane (z eff ) depends on the difference in refractive index (n) between the relatively high refractive index layer 322 and the relatively low refractive index layer 323. This is because the larger difference in refractive index (n) between the relatively high refractive index layer 322 and the relatively low refractive index layer 323 results in a wider reflectivity band (wavelength range where the reflectivity is relatively high) of the multilayer stack 320. A wider reflectivity band results in a lower group delay (τ). The approximate depth of the effective reflection plane (z eff ) is proportional to the group delay (τ) as shown in equation (6). Therefore, a wider reflectivity band results in a shallower depth of the effective reflection plane.
相對低折射率層323之折射率(n)愈低，則相對高折射率層323與相對低折射率層322之間的折射率(n)之差愈大。Ru具有比Mo (n=0.9237)更低之折射率(n=0.887)，此解釋了Ru-Si多層堆疊320之有效反射平面431為何沒有Mo-Si多層堆疊320之有效反射平面432深。The lower the refractive index (n) of the relatively low refractive index layer 323, the greater the difference in refractive index (n) between the relatively high refractive index layer 323 and the relatively low refractive index layer 322. Ru has a lower refractive index (n=0.887) than Mo (n=0.9237), which explains why the effective reflection plane 431 of the Ru-Si multilayer stack 320 is not as deep as the effective reflection plane 432 of the Mo-Si multilayer stack 320.
圖5展示Mo-Si多層堆疊320及Ru-Si多層堆疊320之反射率如何隨著多層堆疊320中之對321的數目而變化。曲線圖係基於波長為大約13.5 nm及入射角為6˚之入射輻射。對於Mo-Si及Ru-Si多層堆疊320，儘管多層堆疊320中之對321的數目相對較低，但反射率隨著多層堆疊320中之對431之數目的增加而快速增加。隨著多層堆疊320中之對321之數目的增加，反射率相對於對321之數目之增加的改變速率減小，且反射率趨向於穩定值。對於Ru-Si多層堆疊320，在對之數目較大之情況下的反射率值(大約0.75)低於Mo-Si多層堆疊320之在對之數目較大之情況下的反射率值(大約0.71)。Ru-Si多層堆疊320在比Mo-Si多層堆疊320 (大約40)更少之對數目(大約30)下大致到達穩定反射率值。FIG. 5 shows how the reflectivity of the Mo—Si multilayer stack 320 and the Ru—Si multilayer stack 320 varies with the number of pairs 321 in the multilayer stack 320. The graphs are based on incident radiation having a wavelength of approximately 13.5 nm and an incident angle of 6°. For the Mo—Si and Ru—Si multilayer stacks 320, the reflectivity increases rapidly with an increase in the number of pairs 321 in the multilayer stack 320, despite the relatively low number of pairs 321 in the multilayer stack 320. As the number of pairs 321 in the multilayer stack 320 increases, the rate of change of the reflectivity relative to the increase in the number of pairs 321 decreases, and the reflectivity tends toward a stable value. For the Ru-Si multilayer stack 320, the reflectivity value (about 0.75) at a larger number of pairs is lower than the reflectivity value (about 0.71) at a larger number of pairs for the Mo-Si multilayer stack 320. The Ru-Si multilayer stack 320 reaches a substantially stable reflectivity value at a smaller number of pairs (about 30) than the Mo-Si multilayer stack 320 (about 40).
本發明係關於一種當用於相對低折射率層323中時可提供多層堆疊320之材料，該多層堆疊320組合由Mo-Si多層堆疊320展現之有利反射屬性與由Ru-Si多層堆疊320展現之有利有效反射平面屬性。具體地，材料為包含Mo、Ru及鈮(Nb)中之至少兩者的合金。如表1中所展示，Nb具有高於Mo及Ru兩者之折射率的折射率(n=0.9337)及低於Mo及Ru兩者之吸收係數的吸收係數(n=0.9337)。因此，Nb-Si多層堆疊可具有優於Mo-Si及Ru-Si多層堆疊320之反射，但具有更深有效反射平面(z eff)。對於具有大約13.5 nm之波長的光，合金經構成以使得折射率小於或等於0.92且吸收係數小於或等於0.015。對於具有大約13.5奈米之波長的光，合金可較佳地展現小於0.91且進一步較佳地小於0.9之折射率。對於具有大約13.5 nm之波長的光，合金可具有較佳地具有小於0.014、較佳地小於0.013且進一步較佳地小於0.012之吸收係數(k)。 The present invention relates to a material that, when used in a relatively low refractive index layer 323, can provide a multilayer stack 320 that combines the favorable reflection properties exhibited by a Mo-Si multilayer stack 320 with the favorable effective reflection plane properties exhibited by a Ru-Si multilayer stack 320. Specifically, the material is an alloy comprising at least two of Mo, Ru, and Niobium (Nb). As shown in Table 1, Nb has a refractive index (n=0.9337) that is higher than both Mo and Ru and an absorption coefficient (n=0.9337) that is lower than both Mo and Ru. Thus, a Nb-Si multilayer stack can have a better reflection than Mo-Si and Ru-Si multilayer stacks 320, but with a deeper effective reflection plane (z eff ). For light having a wavelength of about 13.5 nm, the alloy is configured such that the refractive index is less than or equal to 0.92 and the absorption coefficient is less than or equal to 0.015. For light having a wavelength of about 13.5 nanometers, the alloy may preferably exhibit a refractive index less than 0.91 and more preferably less than 0.9. For light having a wavelength of about 13.5 nm, the alloy may have an absorption coefficient (k) preferably less than 0.014, more preferably less than 0.013 and more preferably less than 0.012.
除了Ru、Nb及Mo中之至少兩者以外，合金亦可包含常見雜質，諸如磷、硫及氧。合金內此類雜質之比例可使得其並不對合金之折射率或吸收係數具有顯著影響。合金內雜質之質量百分比可小於5%、較佳地小於1%且進一步較佳地小於0.1%。亦即，合金基本上由Ru、Nb及Mo中之至少兩者組成。In addition to at least two of Ru, Nb and Mo, the alloy may also contain common impurities such as phosphorus, sulfur and oxygen. The proportion of such impurities in the alloy may be such that they do not have a significant effect on the refractive index or absorption coefficient of the alloy. The mass percentage of impurities in the alloy may be less than 5%, preferably less than 1% and further preferably less than 0.1%. That is, the alloy is essentially composed of at least two of Ru, Nb and Mo.
合金可包含Nb。合金可以使得其無法被視為痕量元素之量含有Nb。亦即，合金中Nb之質量百分比可大於5%。合金中Nb之質量百分比可較佳地大於20%、較佳地大於40%且進一步較佳地大於60%。合金中Nb之質量百分比可小於70%、較佳地小於50%且進一步較佳地小於45%。The alloy may contain Nb. The alloy may contain Nb in an amount that cannot be regarded as a trace element. That is, the mass percentage of Nb in the alloy may be greater than 5%. The mass percentage of Nb in the alloy may be preferably greater than 20%, preferably greater than 40%, and more preferably greater than 60%. The mass percentage of Nb in the alloy may be less than 70%, preferably less than 50%, and more preferably less than 45%.
合金可包含Ru。合金可以使得其無法被視為痕量元素之量含有Ru。亦即，合金中釕之質量百分比可大於5%。較佳地，合金中釕之質量百分比可大於30%、進一步較佳地大於35%且進一步較佳地大於55%。合金中Ru之質量百分比可小於85%、較佳地小於75%且進一步較佳地小於70%。The alloy may contain Ru. The alloy may contain Ru in an amount that cannot be regarded as a trace element. That is, the mass percentage of ruthenium in the alloy may be greater than 5%. Preferably, the mass percentage of ruthenium in the alloy may be greater than 30%, more preferably greater than 35%, and more preferably greater than 55%. The mass percentage of Ru in the alloy may be less than 85%, more preferably less than 75%, and more preferably less than 70%.
合金可包含Mo。合金可以使得其無法被視為痕量元素之量含有Mo。合金中Mo之質量百分比可大於或等於0%、較佳地大於10%且進一步較佳地大於5%。第二層之材料中Mo之質量百分比可小於70%、較佳地小於50%且進一步較佳地小於25%。The alloy may contain Mo. The alloy may contain Mo in an amount that cannot be regarded as a trace element. The mass percentage of Mo in the alloy may be greater than or equal to 0%, preferably greater than 10%, and more preferably greater than 5%. The mass percentage of Mo in the material of the second layer may be less than 70%, preferably less than 50%, and more preferably less than 25%.
折射率(n)及吸收係數(k)之屬性可藉由合金之組分之折射率及吸收係數的加權平均值來近似。因此，可形成使合金之組成物與折射率(n)及吸收係數(k)之值近似相關的表達式。為了促進此情形，以下給出合金之通式： 此等合金中之下標數字意欲表示合金中各元素之莫耳比。數字並不表明合金由特定晶格結構形成，在該晶格結構中，各種組分保持於規則陣列中，使得比率為固定整數。由於合金可能含有雜質，因此合金之通式可為： 其中I表示合金中之雜質。I可表示單一雜質或複數個雜質。 The properties of refractive index (n) and absorption coefficient (k) can be approximated by a weighted average of the refractive index and absorption coefficient of the components of the alloy. Therefore, an expression can be formed that approximately relates the composition of the alloy to the values of refractive index (n) and absorption coefficient (k). To facilitate this, the general formula for the alloy is given below: The subscript numbers in these alloys are intended to indicate the molar ratios of the elements in the alloy. The numbers do not indicate that the alloy is formed from a specific lattice structure in which the various components are held in a regular array so that the ratios are fixed integers. Since the alloy may contain impurities, the general formula for the alloy may be: Where I represents the impurities in the alloy. I can represent a single impurity or multiple impurities.
合金之折射率(n)及吸收係數(k)之加權平均表達式如下，其中n Ru、n Nb、n Mo、k Ru、k Nb及n Mo之值在表1中給出。 The weighted average expressions of the refractive index (n) and absorption coefficient (k) of the alloy are as follows, where the values of n Ru , n Nb , n Mo , k Ru , k Nb and n Mo are given in Table 1.
應注意，加權平均方法僅提供近似值。實際上，合金可展現折射率(n)及吸收係數(k)之值，其小於(亦即，優於)自加權平均計算所預期之值。舉例而言，對於實例合金RuNb 2，來自組分之彼等值之加權平均值的近似折射率(n)及吸收係數(k)分別為0.903及0.131，但實際折射率(n)及吸收係數(k)分別為0.898及0.0109。 It should be noted that the weighted average method only provides approximate values. In practice, alloys may exhibit values of refractive index (n) and absorption coefficient (k) that are less than (i.e., better than) the values expected from the weighted average calculation. For example, for the example alloy RuNb2 , the approximate refractive index (n) and absorption coefficient (k) from the weighted average of those values for the components are 0.903 and 0.131, respectively, but the actual refractive index (n) and absorption coefficient (k) are 0.898 and 0.0109, respectively.
加權平均表達式可用於獲得獲得預定折射率(n max)或預定吸收係數(k max)所需之合金組成物之條件的估計。 The weighted average expression can be used to obtain an estimate of the conditions of the alloy composition required to obtain a predetermined refractive index (n max ) or a predetermined absorption coefficient (k max ).
預定折射率(n max)可為0.92、較佳地為0.91且進一步較佳地小於0.9。預定吸收係數(kmax)可為0.015、較佳地小於0.014、進一步較佳地小於0.013且進一步較佳地小於0.012。在一個實例合金中，Ru之質量百分比可大於50%、較佳地大於55%、進一步較佳地大於59%、小於70%、較佳地小於65%且進一步較佳地小於61%；Mo之質量百分比可大於10%、較佳地大於15%、較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%；且Nb之質量百分比可大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%。舉例而言，合金可為Ru 6Mo 2Nb 2。 The predetermined refractive index (n max ) may be 0.92, preferably 0.91, and more preferably less than 0.9. The predetermined absorption coefficient (kmax) may be 0.015, preferably less than 0.014, more preferably less than 0.013, and more preferably less than 0.012. In an example alloy, the mass percentage of Ru may be greater than 50%, preferably greater than 55%, more preferably greater than 59%, less than 70%, preferably less than 65%, and more preferably less than 61%; the mass percentage of Mo may be greater than 10%, preferably greater than 15%, preferably greater than 19%, less than 30%, preferably less than 25%, and more preferably less than 21%; and the mass percentage of Nb may be greater than 10%, preferably greater than 15%, more preferably greater than 19%, less than 30%, preferably less than 25%, and more preferably less than 21%. For example, the alloy may be Ru 6 Mo 2 Nb 2 .
在另一實例合金中，Ru之質量百分比可大於30%、較佳地大於30%、進一步較佳地大於39%、小於50%、較佳地小於45%且進一步較佳地小於41%；Mo之質量百分比可大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%；且Nb之質量百分比可大於30%、較佳地大於35%、進一步較佳地大於31%、小於50%、較佳地小於45%且進一步較佳地小於41%。舉例而言，合金可為Ru 4Mo 2Nb 4。此等合金僅作為可滿足本發明之需求的合金之實例提供。 In another example alloy, the mass percentage of Ru may be greater than 30%, preferably greater than 30%, more preferably greater than 39%, less than 50%, preferably less than 45%, and more preferably less than 41%; the mass percentage of Mo may be greater than 10%, preferably greater than 15%, more preferably greater than 19%, less than 30%, preferably less than 25%, and more preferably less than 21%; and the mass percentage of Nb may be greater than 30%, preferably greater than 35%, more preferably greater than 31%, less than 50%, preferably less than 45%, and more preferably less than 41%. For example, the alloy may be Ru 4 Mo 2 Nb 4 . These alloys are provided only as examples of alloys that can meet the requirements of the present invention.
合金可包含Ru及Nb，但不包含Mo。亦即，合金可由Ru、Nb及常見雜質組成。Ru之質量百分比可大於20%、較佳地大於30%、進一步較佳地大於32%、小於40%、較佳地小於35%且較佳地小於34%；且Nb之質量百分比可大於50%、較佳地大於60%、進一步較佳地大於66%、小於80%、較佳地小於70%且進一步較佳地小於67%。舉例而言，合金可為RuNb 2。 The alloy may contain Ru and Nb, but not Mo. That is, the alloy may be composed of Ru, Nb and common impurities. The mass percentage of Ru may be greater than 20%, preferably greater than 30%, more preferably greater than 32%, less than 40%, preferably less than 35% and preferably less than 34%; and the mass percentage of Nb may be greater than 50%, preferably greater than 60%, more preferably greater than 66%, less than 80%, preferably less than 70% and more preferably less than 67%. For example, the alloy may be RuNb 2 .
合金可包含Ru及Mo，但不包含Nb。亦即，合金可由Ru、Nb及常見雜質組成。在一實例中，Ru之質量百分比可大於20%、較佳地大於30%、進一步較佳地大於32%、小於50%、較佳地小於40%且進一步較佳地小於35%；且Mo之質量百分比可大於50%、較佳地大於60%、進一步較佳地大於65%、小於80%、較佳地小於70%且進一步較佳地小於68%。舉例而言，合金可為RuMo 2。在另一實例中，Ru之質量百分比可大於30%、較佳地大於40%、進一步較佳地大於45%、小於70%、較佳地小於60%且進一步較佳地小於55%；且Mo之質量百分比可大於30%、較佳地大於40%、進一步較佳地大於45%、小於70%、較佳地小於60%且進一步較佳地小於55%。舉例而言，合金可為RuMo。 The alloy may contain Ru and Mo, but not Nb. That is, the alloy may be composed of Ru, Nb and common impurities. In one example, the mass percentage of Ru may be greater than 20%, preferably greater than 30%, more preferably greater than 32%, less than 50%, preferably less than 40%, and more preferably less than 35%; and the mass percentage of Mo may be greater than 50%, preferably greater than 60%, more preferably greater than 65%, less than 80%, preferably less than 70%, and more preferably less than 68%. For example, the alloy may be RuMo 2 . In another example, the mass percentage of Ru may be greater than 30%, preferably greater than 40%, more preferably greater than 45%, less than 70%, preferably less than 60%, and more preferably less than 55%; and the mass percentage of Mo may be greater than 30%, preferably greater than 40%, more preferably greater than 45%, less than 70%, preferably less than 60%, and more preferably less than 55%. For example, the alloy may be RuMo.
折射率(n)及吸收係數(k)之值繪製於圖6中所描繪之曲線圖上，其中吸收係數(k)在豎直軸線上且折射率(n)在水平軸線上，且該等值係針對大約13.5 nm之波長。圖6中之曲線圖上亦展示元素Mo、Ru及Nb之折射率(n)及吸收係數(k)的值。對於三個實例合金中之各者，折射率(n)及吸收係數(k)之值處於Mo與Ru之彼等值之間。此意謂若實例合金中之任一者實施為多層堆疊320中之相對低折射率層323，則多層堆疊320將展現優於Ru-Si多層堆疊320之反射率及比Mo-Si多層堆疊更淺之有效反射平面。此外，折射率(n)及吸收係數之值取決於合金之組成物而變化。因此，藉由定製用於相對低折射率層323、多層堆疊320中之包含Mo、Ru及Nb之合金的組成物，可針對情境要求最佳化多層堆疊320之屬性。The values of the refractive index (n) and the absorption coefficient (k) are plotted on the graph depicted in FIG6 , where the absorption coefficient (k) is on the vertical axis and the refractive index (n) is on the horizontal axis, and the values are for a wavelength of approximately 13.5 nm. The values of the refractive index (n) and the absorption coefficient (k) for the elements Mo, Ru, and Nb are also shown on the graph in FIG6 . For each of the three example alloys, the values of the refractive index (n) and the absorption coefficient (k) are between those values for Mo and Ru. This means that if any of the example alloys is implemented as a relatively low refractive index layer 323 in a multilayer stack 320, the multilayer stack 320 will exhibit a reflectivity that is superior to that of a Ru—Si multilayer stack 320 and an effective reflection plane that is shallower than that of a Mo—Si multilayer stack. Additionally, the values of the refractive index (n) and the absorption coefficient vary depending on the composition of the alloy. Thus, by tailoring the composition of the alloy comprising Mo, Ru, and Nb used in the multilayer stack 320 for the relatively low refractive index layer 323, the properties of the multilayer stack 320 can be optimized for the scenario requirements.
圖7描繪豎直軸線上之反射率及水平軸線上之多層對之數目的曲線圖。曲線圖係基於波長為大約13.5 nm及入射角為6˚之入射輻射。如在圖5中，繪製Mo-Si多層堆疊320及Ru-Si多層堆疊320之值，但圖7亦包括RuNb 2-Si多層堆疊320及Ru 4Mo 2Nb 4-Si 320多層堆疊320之值。RuNb 2-Si多層堆疊320之效能優於其他其他多層堆疊320之效能。具體地，隨著對321之數目的增加，RuNb 2-Si多層堆疊320傾向於比其他多層堆疊320 (包括Mo-Si多層堆疊320)更高之反射率。此外，儘管對之數目相對較低(15至25)，但RuNb 2-Si多層堆疊之反射率隨對321之數目之增加的增加速率高於Mo-Si多層堆疊320之增加速率。此意謂RuNb 2-Si多層堆疊320在比Mo-Si多層堆疊320更少之對321的數目下大致到達反射率之穩定狀態值。因此，具有40對之RuNb 2-Si多層堆疊的反射率高於具有40對之Mo-Si多層堆疊的反射率。為了展現與具有40對之Mo-Si多層堆疊相同的反射率，RuNb 2多層堆疊320需要更少對(大約30至34)。 FIG. 7 plots reflectivity on the vertical axis and the number of multilayer pairs on the horizontal axis. The plot is based on incident radiation having a wavelength of approximately 13.5 nm and an angle of incidence of 6°. As in FIG. 5 , the values for the Mo-Si multilayer stack 320 and the Ru-Si multilayer stack 320 are plotted, but FIG. 7 also includes values for the RuNb 2 -Si multilayer stack 320 and the Ru 4 Mo 2 Nb 4 -Si 320 multilayer stack 320. The performance of the RuNb 2 -Si multilayer stack 320 is superior to the performance of the other multilayer stacks 320. Specifically, as the number of pairs 321 increases, the RuNb 2 -Si multilayer stack 320 tends to have a higher reflectivity than other multilayer stacks 320 (including the Mo-Si multilayer stack 320). In addition, despite the relatively low number of pairs (15 to 25), the reflectivity of the RuNb 2 -Si multilayer stack increases at a higher rate than that of the Mo-Si multilayer stack 320 as the number of pairs 321 increases. This means that the RuNb 2 -Si multilayer stack 320 approximately reaches a steady-state value of reflectivity at a lower number of pairs 321 than the Mo-Si multilayer stack 320. Therefore, the reflectivity of the RuNb2 -Si multilayer stack with 40 pairs is higher than the reflectivity of the Mo-Si multilayer stack with 40 pairs. To exhibit the same reflectivity as the Mo-Si multilayer stack with 40 pairs, the RuNb2 multilayer stack 320 requires fewer pairs (about 30 to 34).
圖8描繪豎直軸線上之反射率及水平軸線上以nm為單位之波長的曲線圖。曲線圖係基於具有40對431之多層堆疊320及入射角為6˚之輻射。波長為多層堆疊320之入射輻射的波長。曲線圖包括Mo-Si多層堆疊320、Ru-Si多層堆疊320、RuNb 2-Si多層堆疊320及Ru 4Mo 2Nb 4-Si多層堆疊320。對於所有曲線，反射率閥在大約13.5 nm之波長處到達峰值。如自前述曲線圖所預期，RuNb 2-Si多層堆疊320之峰值反射率最高，其值略微大於Mo-Si多層堆疊320之峰值反射率。Ru-Si多層堆疊320之峰值反射率最低。Ru-Si多層堆疊320具有最寬反射率帶，且Mo-Si多層堆疊320具有最窄反射率帶。RuNb 2-Si多層堆疊320之反射率帶比Mo-Si多層堆疊320之反射率帶更寬，因此RuNb 2-Si多層堆疊320之有效反射平面的深度將小於Mo-Si多層堆疊320之有效反射平面的深度。 FIG8 depicts a graph of reflectivity on the vertical axis and wavelength in nm on the horizontal axis. The graph is based on a multilayer stack 320 having 40 to 431 and radiation at an incident angle of 6°. The wavelength is the wavelength of the incident radiation on the multilayer stack 320. The graph includes a Mo-Si multilayer stack 320, a Ru-Si multilayer stack 320, a RuNb 2 -Si multilayer stack 320, and a Ru 4 Mo 2 Nb 4 -Si multilayer stack 320. For all graphs, the reflectivity threshold peaks at a wavelength of approximately 13.5 nm. As expected from the aforementioned graphs, the peak reflectivity of the RuNb 2 -Si multilayer stack 320 is the highest, and its value is slightly greater than the peak reflectivity of the Mo-Si multilayer stack 320. The peak reflectivity of the Ru-Si multilayer stack 320 is the lowest. The Ru-Si multilayer stack 320 has the widest reflectivity band, and the Mo-Si multilayer stack 320 has the narrowest reflectivity band. The reflectivity band of the RuNb 2 -Si multilayer stack 320 is wider than the reflectivity band of the Mo-Si multilayer stack 320, so the depth of the effective reflection plane of the RuNb 2 -Si multilayer stack 320 will be less than the depth of the effective reflection plane of the Mo-Si multilayer stack 320.
因此，除了展現較高反射率以外，RuNb 2-Si多層堆疊320將展現比Mo-Si多層堆疊320更不顯著的陰影(M3D)效應。將RuNb 2-Si多層堆疊320與Ru-Si多層堆疊進行比較，顯而易見，RuNb 2-Si多層堆疊320展現高得多之反射率，且其如此不會導致有效反射平面之深度的顯著增加(相比於例如若反射率藉由替代地使用Mo-Si多層堆疊而增加，則有效反射平面之深度增加)。可針對Ru 4Mo 2Nb 4-Si多層堆疊320進行類似觀察。觀察結果亦將適用於包含Mo、Ru及Nb中之至少兩者且具有小於或等於0.92之折射率及小於或等於0.015之吸收係數的其他合金。 Thus, in addition to exhibiting higher reflectivity, the RuNb2 -Si multilayer stack 320 will exhibit a less pronounced shading (M3D) effect than the Mo-Si multilayer stack 320. Comparing the RuNb2 -Si multilayer stack 320 to the Ru-Si multilayer stack, it is apparent that the RuNb2 -Si multilayer stack 320 exhibits a much higher reflectivity, and does so without resulting in a significant increase in the depth of the effective reflection plane (compared to, for example, if the reflectivity were increased by using a Mo -Si multilayer stack instead). Similar observations can be made for the Ru4Mo2Nb4 -Si multilayer stack 320. The observations will also apply to other alloys comprising at least two of Mo, Ru, and Nb and having a refractive index less than or equal to 0.92 and an absorption coefficient less than or equal to 0.015.
圖9描繪豎直軸線上之反射率及水平軸線上以度為單位之入射角的曲線圖。曲線圖係基於具有40對之多層堆疊320及波長為大約13.5 nm之輻射。曲線圖中展示Mo-Si多層堆疊320、Ru-Si多層堆疊320、RuNb 2-Si多層堆疊320及Ru 4Mo 2Nb 4-Si多層堆疊320。通常，在9度以下，反射率隨入射角增加之變化並不顯著。事實上，反射率實際上自0度之入射角至約7.5度之入射角略微地增加。當入射角超過9度時，反射率快速減小。如可預期，Ru-Si多層堆疊320在入射角範圍內之反射率比Mo-Si多層堆疊320低得多。RuNb 2-Si多層堆疊320之效能優良，在整個入射角範圍內展現較高反射率。 FIG. 9 depicts a graph of reflectivity on the vertical axis and angle of incidence in degrees on the horizontal axis. The graph is based on a multilayer stack 320 having 40 pairs and radiation having a wavelength of approximately 13.5 nm. The graph shows a Mo-Si multilayer stack 320, a Ru-Si multilayer stack 320, a RuNb 2 -Si multilayer stack 320, and a Ru 4 Mo 2 Nb 4 -Si multilayer stack 320. Generally, below 9 degrees, the change in reflectivity with increasing angle of incidence is not significant. In fact, the reflectivity actually increases slightly from an angle of incidence of 0 degrees to an angle of incidence of approximately 7.5 degrees. When the angle of incidence exceeds 9 degrees, the reflectivity decreases rapidly. As expected, the reflectivity of the Ru-Si multilayer stack 320 is much lower over the range of incident angles than the Mo-Si multilayer stack 320. The RuNb2 -Si multilayer stack 320 performs well, exhibiting higher reflectivity over the entire range of incident angles.
考慮到上述內容，根據本發明之反射部件可較佳地在多層堆疊320中包含小於或等於40對321、進一步較佳地小於35對321且進一步較佳地小於35對321。多層堆疊320中之對321之數目可較佳地大於20。此外，根據本發明之反射部件之有效反射平面可在多層堆疊320之最上部表面下方小於45 nm、在多層堆疊320之最上部表面下方較佳地小於40 nm且在該多層堆疊之該表面下方進一步較佳地小於35 nm。反射部件之反射率(對於波長為13.5 nm及入射角為6˚之輻射)可較佳地大於0.73、進一步較佳地大於0.74且進一步較佳地大於0.75。In view of the above, the reflective component according to the present invention may preferably include less than or equal to 40 pairs 321, further preferably less than 35 pairs 321, and further preferably less than 35 pairs 321 in the multilayer stack 320. The number of pairs 321 in the multilayer stack 320 may preferably be greater than 20. In addition, the effective reflection plane of the reflective component according to the present invention may be less than 45 nm below the uppermost surface of the multilayer stack 320, preferably less than 40 nm below the uppermost surface of the multilayer stack 320, and further preferably less than 35 nm below the surface of the multilayer stack. The reflectivity of the reflective component (for radiation having a wavelength of 13.5 nm and an incident angle of 6°) may be preferably greater than 0.73, more preferably greater than 0.74, and even more preferably greater than 0.75.
儘管以上描述主要參考遮罩300，但本發明不限於此實施，且多層堆疊320可實施於任何反射部件中。舉例而言，反射部件可用於位於微影設備內之其他組件中，諸如EUV掃描儀鏡面中。Although the above description mainly refers to the mask 300, the present invention is not limited to this implementation, and the multi-layer stack 320 can be implemented in any reflective component. For example, the reflective component can be used in other components located in the lithography equipment, such as in the EUV scanner mirror.
當封蓋層330存在於多層堆疊320之上部表面上時，封蓋層320可由與相對低折射率層323相同之材料(亦即，上文詳細描述之合金)形成。即使當相對較低折射層323自身並不由合金構成時，此亦可為有利的。亦即，當相對低折射率層323由諸如鉬之另一材料形成時，封蓋層330可由本申請案中所揭示之合金形成。When capping layer 330 is present on the upper surface of multi-layer stack 320, capping layer 320 can be formed of the same material as relatively low refractive index layer 323 (i.e., the alloy described in detail above). This can be advantageous even when relatively low refractive index layer 323 itself is not composed of an alloy. That is, when relatively low refractive index layer 323 is formed of another material such as molybdenum, capping layer 330 can be formed of an alloy disclosed in the present application.
儘管可在本文中特定地參考微影設備在IC製造中之使用，但應理解，本文中所描述之微影設備可具有其他應用。可能之其他應用包括製造整合式光學系統、用於磁疇記憶體之引導及偵測圖案、平板顯示器、液晶顯示器(LCD)、薄膜磁頭等。Although specific reference may be made herein to the use of lithography equipment in IC manufacturing, it should be understood that the lithography equipment described herein may have other applications. Possible other applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic resonance memory, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, etc.
在上下文允許之情況下，本發明之實施例可以硬體、韌體、軟體或其任何組合實施。本發明之實施例亦可由儲存於機器可讀媒體上之指令實施，該等指令可由一或多個處理器讀取及執行。機器可讀媒體可包括用於儲存或傳輸呈可由機器(例如，計算裝置)讀取之形式之資訊的任何機構。舉例而言，機器可讀媒體可包括唯讀記憶體(ROM)；隨機存取記憶體(RAM)；磁性儲存媒體；光學儲存媒體；快閃記憶體裝置；電、光學、聲學或其他形式之傳播信號(例如，載波、紅外線信號、數位信號等)；及其他者。此外，韌體、軟體、常式、指令可在本文中被描述為執行某些動作。然而，應瞭解，此類描述僅出於方便起見，且此類動作事實上起因於計算裝置、處理器、控制器或執行韌體、軟體、常式、指令等且在執行此操作時可使得致動器或其他裝置與實體世界交互之其他裝置。Where the context permits, embodiments of the present invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the present invention may also be implemented by instructions stored on a machine-readable medium that may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.); and others. In addition, firmware, software, routines, instructions, etc. may be described herein as performing certain actions. However, it should be understood that such descriptions are for convenience only and that such actions actually result from a computing device, processor, controller, or other device executing the firmware, software, routines, instructions, etc. and, when performing such operations, may cause an actuator or other device to interact with the real world.
儘管可在本文中特定地參考在微影設備之上下文中的本發明之實施例，但本發明之實施例可用於其他設備中。本發明之實施例可形成遮罩檢測設備、度量衡設備或量測或處理諸如晶圓(或另一基板)或遮罩(或另一圖案化裝置)之物件的任何設備之部分。此等設備可通常稱為微影工具。Although specific reference may be made herein to embodiments of the invention in the context of lithography apparatus, embodiments of the invention may be used in other apparatus. Embodiments of the invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or another substrate) or a mask (or another patterning device). Such apparatus may generally be referred to as a lithography tool.
儘管可能在上文已特定地參考在光學微影之上下文中的本發明之實施例之使用，但應瞭解，本發明在上下文允許之情況下不限於光學微影。Although specific reference may have been made above to the use of embodiments of the present invention in the context of photolithography, it will be appreciated that the present invention is not limited to photolithography where the context permits.
雖然上文已描述本發明之特定實施例，但應瞭解，可以與所描述方式不同之其他方式來實踐本發明。以上描述意欲為說明性，而非限制性的。因此，對於熟習此項技術者將顯而易見，可在不脫離下文所闡明之申請專利範圍及條項之範疇的情況下對如所描述之本發明進行修改。 1. 一種用於EUV微影設備中之反射部件，該反射部件包含多層堆疊，該多層堆疊包含成對地配置之複數個層，其中： 各對包含第一層及第二層； 該第一層由包含Si之材料形成；且 該第二層由包含Ru、Nb及Mo中之至少兩者的材料形成，且其中該第二層經組態以對於具有大約13.5 nm之波長的光具有小於或等於0.92之折射率及小於或等於0.015之吸收係數。 2. 如條項1之反射部件，其中該第二層之該材料經組態以對於具有大約13.5 nm之波長的光具有小於0.91且較佳地小於0.9之折射率。 3. 如條項1或2之反射部件，其中該第二層之該材料經組態以對於具有大約13.5 nm之波長的光具有小於0.014、較佳地小於0.013且進一步較佳地小於0.012之吸收係數。 4. 如前述條項中任一項之反射部件，其中該第二層之該材料包含Nb。 5. 如前述條項中任一項之反射部件，其中該第二層之該材料包含Ru。 6. 如前述條項中任一項之反射部件，其中該第二層之該材料包含Mo。 7. 如前述條項中任一項之反射部件，其中該等第二層之該材料由Ru、Nb、Mo及常見雜質中之至少兩者組成。 8. 如前述條項中任一項之反射部件，其中該第二層之該材料中Nb之質量百分比大於5%、較佳地大於20%、較佳地大於40%且進一步較佳地大於60%。 9. 如前述條項中任一項之反射部件，其中該第二層之該材料中Ru之質量百分比大於30%、較佳地大於35%且進一步較佳地大於55%。 10. 如前述條項中任一項之反射部件，其中該第二層之該材料中Mo之質量百分比大於或等於0%、較佳地大於10%且進一步較佳地大於5%。 11. 如前述條項中任一項之反射部件，其中該第二層之該材料中Nb之該質量百分比小於70%、較佳地小於50%且進一步較佳地小於45%。 12. 如前述條項中任一項之反射部件，其中該第二層之該材料中Ru之該質量百分比小於85%、較佳地小於75%且進一步較佳地小於70%。 13. 如前述條項中任一項之反射部件，其中該第二層之該材料中Mo之該質量百分比小於70%、較佳地小於50%且進一步較佳地小於25%。 14. 如前述條項中任一項之反射部件，其中該第二層之該材料具有形式Ru xNb yMo zImp a，且其中： Imp表示至少一種雜質； x+y+z+a=1；且 該材料之組成物使得0.887x+0.9337y+0.9237z小於0.92、較佳地小於0.91且進一步較佳地小於0.9。 15. 如前述條項中任一項之反射部件，其中該第二層之該材料具有形式Ru xNb yMo zImp a，且其中： Imp表示至少一種雜質； x+y+z+a=1；且 該材料之該組成物使得0.0171x+0.0052y+0.0064z小於0.015、較佳地小於0.014、進一步較佳地小於0.013且進一步較佳地小於0.012。 16. 如條項1至7中任一項之反射部件，其中Ru之該質量百分比大於20%、較佳地大於30%、進一步較佳地大於32%、小於40%、較佳地小於35%且較佳地小於34%，且Nb之該質量百分比大於50%、較佳地大於60%且進一步較佳地大於66%、小於80%、較佳地小於70%且進一步較佳地小於67%。 17. 如條項1至7中任一項之反射部件，其中：Ru之該質量百分比大於50%、較佳地大於55%、進一步較佳地大於59%、小於70%、較佳地小於65%且進一步較佳地小於61%；Mo之該質量百分比大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%；且Nb之該質量百分比大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%。 18. 如條項1至7中任一項之反射部件，其中：Ru之該質量百分比大於30%、較佳地大於35%、進一步較佳地大於39%、小於50%、較佳地小於45%且進一步較佳地小於41%；Mo之該質量百分比大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%；且Nb之該質量百分比大於30%、較佳地大於35%、進一步較佳地大於39%、小於50%、較佳地小於45%且進一步較佳地小於41%。 19. 如前述條項中任一項之反射部件，其中該反射部件具有在該多層堆疊之最上部表面下方小於45 nm、在該多層堆疊之該最上部表面下方較佳地小於40 nm且在該多層堆疊之該最上部表面下方進一步較佳地小於35 nm的有效反射平面。 20. 如前述條項中任一項之反射部件，其中該反射部件經組態以供用作EUV掃描儀鏡面。 21. 如條項1至19中任一項之反射部件，其中該反射部件經組態以供用作EUV光罩，且該反射部件進一步包含上面形成有該多層堆疊之基板及定位於該多層堆疊之該最上部表面上之封蓋層。 22. 如條項21之反射部件，其中該封蓋層由與各第二層相同之材料形成。 23. 如條項21或22之反射部件，其中該反射部件進一步包含定位於該封蓋層之最上部表面上的吸收體層。 24. 一種微影設備，其包括如前述條項中任一項之反射部件。 25. 一種製造裝置之方法，其包括使用如條項1至23中任一項之反射部件。 26. 一種EUV光罩，其包含： 基板； 多層堆疊，其包含成對地配置之複數個層；及 封蓋層，其由包含Ru、Nb及Mo中之至少兩者的材料形成，且其中該封蓋層經組態以對於具有大約13.5 nm之波長的光具有小於0.92之折射率及小於0.0015之吸收係數。 27. 如條項26之EUV光罩，其中該封蓋層之該材料經組態以對於具有大約13.5 nm之波長的光具有小於0.91且較佳地小於0.9之折射率。 28. 如條項26或27之EUV光罩，其中該封蓋層之該材料經組態以對於具有大約13.5 nm之波長的光具有小於0.014、較佳地小於0.013且進一步較佳地小於0.012之吸收係數。 29. 如條項26至28之EUV光罩，其中該封蓋層之該材料包含Nb。 30. 如條項26至29中任一項之EUV光罩，其中該封蓋層之該材料包含Ru。 31. 如條項26至30中任一項之EUV光罩，其中該封蓋層之該材料包含Mo。 32. 如條項26至31中任一項之EUV光罩，其中該封蓋層之該材料由Ru、Nb、Mo及常見雜質中之至少兩者組成。 33. 如條項26至32中任一項之EUV光罩，其中該封蓋層之該材料中Nb之質量百分比大於5%、較佳地大於20%、較佳地大於40%且進一步較佳地大於60%。 34. 如條項26至33中任一項之EUV光罩，其中該封蓋層之該材料中Ru之質量百分比大於30%、較佳地大於35%且進一步較佳地大於55%。 35. 如條項26至34中任一項之EUV光罩，其中該封蓋層之該材料中Mo之質量百分比大於或等於0%、較佳地大於5%且進一步較佳地大於10%。 36. 如條項26至35中任一項之EUV光罩，其中該封蓋層之該材料中Nb之該質量百分比小於70%、較佳地小於50%且進一步較佳地小於45%。 37. 如條項26至36中任一項之EUV光罩，其中該封蓋層之該材料中Ru之該質量百分比小於85%、較佳地小於75%且進一步較佳地小於70%。 38. 如條項26至37中任一項之EUV光罩，其中該封蓋層之該材料中Mo之該質量百分比小於70%、較佳地小於50%且進一步較佳地小於25%。 39. 如條項26至38中任一項之EUV光罩，其中該第二層之該材料具有形式Ru xNb yMo zI a，其中I表示至少一種雜質，且該材料之組成物使得0.887x+0.9337y+0.9237z小於0.92、較佳地小於0.91且進一步較佳地小於0.9。 40. 如條項26至39中任一項之EUV光罩，其中該封蓋層之該材料具有形式Ru xNb yMo zI a，其中I表示至少一種雜質，且該材料之該組成物使得0.0171x+0.0052y+0.0064z小於0.015、較佳地小於0.014、進一步較佳地小於0.013且進一步較佳地小於0.012。 41. 如條項26至32中任一項之EUV光罩，其中Ru之該質量百分比大於20%、較佳地大於30%、進一步較佳地大於32%、小於40%、較佳地小於35%且較佳地小於34%，且Nb之該質量百分比大於50%、較佳地大於60%且進一步較佳地大於66%並且小於80%、較佳地小於70%且進一步較佳地小於67%。 42. 如條項26至32中任一項之EUV光罩，其中：Ru之該質量百分比大於50%、較佳地大於55%、進一步較佳地大於59%、小於70%、較佳地小於65%且進一步較佳地小於61%；Mo之該質量百分比大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%；且Nb之該質量百分比大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%。 43. 如條項26至32中任一項之EUV光罩，其中：Ru之該質量百分比大於30%、較佳地大於35%、進一步較佳地大於39%、小於50%、較佳地小於45%且進一步較佳地小於41%；Mo之該質量百分比大於10%、較佳地大於15%、進一步較佳地大於19%、小於30%、較佳地小於25%且進一步較佳地小於21%；且Nb之該質量百分比大於30%、較佳地大於35%、進一步較佳地大於39%、小於50%、較佳地小於45%且進一步較佳地小於41%。 44. 一種微影設備，其包括如條項26至43中任一項之EUV光罩。 45. 一種製造裝置之方法，其包括使用如條項26至43中任一項之EUV光罩。 Although specific embodiments of the present invention have been described above, it should be understood that the present invention may be practiced in other ways than those described. The above description is intended to be illustrative rather than restrictive. Therefore, it will be apparent to those skilled in the art that modifications may be made to the present invention as described without departing from the scope of the claims and provisions set forth below. 1. A reflective component for use in an EUV lithography apparatus, the reflective component comprising a multilayer stack, the multilayer stack comprising a plurality of layers arranged in pairs, wherein: each pair comprises a first layer and a second layer; the first layer is formed of a material comprising Si; and the second layer is formed of a material comprising at least two of Ru, Nb, and Mo, and wherein the second layer is configured to have a refractive index less than or equal to 0.92 and an absorption coefficient less than or equal to 0.015 for light having a wavelength of approximately 13.5 nm. 2. The reflective component of clause 1, wherein the material of the second layer is configured to have a refractive index less than 0.91 and preferably less than 0.9 for light having a wavelength of approximately 13.5 nm. 3. A reflective component as in clause 1 or 2, wherein the material of the second layer is configured to have an absorption coefficient of less than 0.014, preferably less than 0.013 and further preferably less than 0.012 for light having a wavelength of about 13.5 nm. 4. A reflective component as in any of the preceding clauses, wherein the material of the second layer comprises Nb. 5. A reflective component as in any of the preceding clauses, wherein the material of the second layer comprises Ru. 6. A reflective component as in any of the preceding clauses, wherein the material of the second layer comprises Mo. 7. A reflective component as in any of the preceding clauses, wherein the material of the second layers consists of at least two of Ru, Nb, Mo and common impurities. 8. A reflective component as in any of the preceding clauses, wherein the mass percentage of Nb in the material of the second layer is greater than 5%, preferably greater than 20%, preferably greater than 40%, and further preferably greater than 60%. 9. A reflective component as in any of the preceding clauses, wherein the mass percentage of Ru in the material of the second layer is greater than 30%, preferably greater than 35%, and further preferably greater than 55%. 10. A reflective component as in any of the preceding clauses, wherein the mass percentage of Mo in the material of the second layer is greater than or equal to 0%, preferably greater than 10%, and further preferably greater than 5%. 11. A reflective component as in any of the preceding clauses, wherein the mass percentage of Nb in the material of the second layer is less than 70%, preferably less than 50%, and further preferably less than 45%. 12. A reflective component as in any of the preceding clauses, wherein the mass percentage of Ru in the material of the second layer is less than 85%, preferably less than 75% and further preferably less than 70%. 13. A reflective component as in any of the preceding clauses, wherein the mass percentage of Mo in the material of the second layer is less than 70%, preferably less than 50% and further preferably less than 25%. 14. A reflective component as in any of the preceding clauses, wherein the material of the second layer has the form Ru x Nb y Mo z Imp a , and wherein: Imp represents at least one impurity; x+y+z+a=1; and the composition of the material is such that 0.887x+0.9337y+0.9237z is less than 0.92, preferably less than 0.91 and further preferably less than 0.9. 15. The reflective component of any of the preceding clauses, wherein the material of the second layer has the form Ru x Nb y Mo z Imp a , and wherein: Imp represents at least one impurity; x+y+z+a=1; and the composition of the material is such that 0.0171x+0.0052y+0.0064z is less than 0.015, preferably less than 0.014, further preferably less than 0.013 and further preferably less than 0.012. 16. The reflective component of any one of clauses 1 to 7, wherein the mass percentage of Ru is greater than 20%, preferably greater than 30%, further preferably greater than 32%, less than 40%, preferably less than 35% and preferably less than 34%, and the mass percentage of Nb is greater than 50%, preferably greater than 60% and further preferably greater than 66%, less than 80%, preferably less than 70% and further preferably less than 67%. 17. The reflective component of any one of clauses 1 to 7, wherein: the mass percentage of Ru is greater than 50%, preferably greater than 55%, further preferably greater than 59%, less than 70%, preferably less than 65% and further preferably less than 61%; the mass percentage of Mo is greater than 10%, preferably greater than 15%, further preferably greater than 19%, less than 30%, preferably less than 25% and further preferably less than 21%; and the mass percentage of Nb is greater than 10%, preferably greater than 15%, further preferably greater than 19%, less than 30%, preferably less than 25% and further preferably less than 21%. 18. The reflective component of any one of clauses 1 to 7, wherein: the mass percentage of Ru is greater than 30%, preferably greater than 35%, further preferably greater than 39%, less than 50%, preferably less than 45% and further preferably less than 41%; the mass percentage of Mo is greater than 10%, preferably greater than 15%, further preferably greater than 19%, less than 30%, preferably less than 25% and further preferably less than 21%; and the mass percentage of Nb is greater than 30%, preferably greater than 35%, further preferably greater than 39%, less than 50%, preferably less than 45% and further preferably less than 41%. 19. A reflective component as in any of the preceding clauses, wherein the reflective component has an effective reflective plane less than 45 nm below the uppermost surface of the multilayer stack, preferably less than 40 nm below the uppermost surface of the multilayer stack, and further preferably less than 35 nm below the uppermost surface of the multilayer stack. 20. A reflective component as in any of the preceding clauses, wherein the reflective component is configured for use as an EUV scanner mirror. 21. A reflective component as in any of clauses 1 to 19, wherein the reflective component is configured for use as an EUV mask, and the reflective component further comprises a substrate on which the multilayer stack is formed and a capping layer positioned on the uppermost surface of the multilayer stack. 22. A reflective component as in clause 21, wherein the capping layer is formed of the same material as each second layer. 23. A reflective component as in clause 21 or 22, wherein the reflective component further comprises an absorber layer positioned on the uppermost surface of the capping layer. 24. A lithography apparatus comprising a reflective component as in any of the preceding clauses. 25. A method of manufacturing a device comprising using a reflective component as in any of clauses 1 to 23. 26. An EUV mask comprising: a substrate; a multilayer stack comprising a plurality of layers arranged in pairs; and a capping layer formed of a material comprising at least two of Ru, Nb and Mo, and wherein the capping layer is configured to have a refractive index less than 0.92 and an absorption coefficient less than 0.0015 for light having a wavelength of about 13.5 nm. 27. The EUV mask of clause 26, wherein the material of the capping layer is configured to have a refractive index less than 0.91 and preferably less than 0.9 for light having a wavelength of about 13.5 nm. 28. The EUV mask of clause 26 or 27, wherein the material of the capping layer is configured to have an absorption coefficient of less than 0.014, preferably less than 0.013 and further preferably less than 0.012 for light having a wavelength of about 13.5 nm. 29. The EUV mask of clauses 26 to 28, wherein the material of the capping layer comprises Nb. 30. The EUV mask of any one of clauses 26 to 29, wherein the material of the capping layer comprises Ru. 31. The EUV mask of any one of clauses 26 to 30, wherein the material of the capping layer comprises Mo. 32. The EUV mask of any one of clauses 26 to 31, wherein the material of the capping layer consists of at least two of Ru, Nb, Mo and common impurities. 33. The EUV mask of any one of clauses 26 to 32, wherein the mass percentage of Nb in the material of the capping layer is greater than 5%, preferably greater than 20%, preferably greater than 40%, and more preferably greater than 60%. 34. The EUV mask of any one of clauses 26 to 33, wherein the mass percentage of Ru in the material of the capping layer is greater than 30%, preferably greater than 35%, and more preferably greater than 55%. 35. The EUV mask of any one of clauses 26 to 34, wherein the mass percentage of Mo in the material of the capping layer is greater than or equal to 0%, preferably greater than 5%, and more preferably greater than 10%. 36. The EUV mask of any one of clauses 26 to 35, wherein the mass percentage of Nb in the material of the capping layer is less than 70%, preferably less than 50%, and more preferably less than 45%. 37. The EUV mask of any one of clauses 26 to 36, wherein the mass percentage of Ru in the material of the capping layer is less than 85%, preferably less than 75%, and more preferably less than 70%. 38. The EUV mask of any one of clauses 26 to 37, wherein the mass percentage of Mo in the material of the capping layer is less than 70%, preferably less than 50%, and more preferably less than 25%. 39. The EUV mask of any one of clauses 26 to 38, wherein the material of the second layer has the form Ru x Nb y Mo z I a , wherein I represents at least one impurity, and the composition of the material is such that 0.887x+0.9337y+0.9237z is less than 0.92, preferably less than 0.91 and further preferably less than 0.9. 40. An EUV mask according to any one of clauses 26 to 39, wherein the material of the capping layer has the form Ru x Nb y Mo z I a , wherein I represents at least one impurity, and the composition of the material is such that 0.0171x+0.0052y+0.0064z is less than 0.015, preferably less than 0.014, further preferably less than 0.013 and further preferably less than 0.012. 41. The EUV mask of any one of clauses 26 to 32, wherein the mass percentage of Ru is greater than 20%, preferably greater than 30%, further preferably greater than 32%, less than 40%, preferably less than 35% and preferably less than 34%, and the mass percentage of Nb is greater than 50%, preferably greater than 60% and further preferably greater than 66% and less than 80%, preferably less than 70% and further preferably less than 67%. 42. The EUV mask of any one of clauses 26 to 32, wherein: the mass percentage of Ru is greater than 50%, preferably greater than 55%, further preferably greater than 59%, less than 70%, preferably less than 65% and further preferably less than 61%; the mass percentage of Mo is greater than 10%, preferably greater than 15%, further preferably greater than 19%, less than 30%, preferably less than 25% and further preferably less than 21%; and the mass percentage of Nb is greater than 10%, preferably greater than 15%, further preferably greater than 19%, less than 30%, preferably less than 25% and further preferably less than 21%. 43. The EUV mask of any one of clauses 26 to 32, wherein: the mass percentage of Ru is greater than 30%, preferably greater than 35%, more preferably greater than 39%, less than 50%, preferably less than 45%, and more preferably less than 41%; the mass percentage of Mo is greater than 10%, preferably greater than 15%, more preferably greater than 19%, less than 30%, preferably less than 25%, and more preferably less than 21%; and the mass percentage of Nb is greater than 30%, preferably greater than 35%, more preferably greater than 39%, less than 50%, preferably less than 45%, and more preferably less than 41%. 44. A lithography apparatus comprising the EUV mask of any one of clauses 26 to 43. 45. A method of manufacturing a device comprising using an EUV mask as described in any one of clauses 26 to 43.
21:未經圖案化光束 22:琢面化場鏡面裝置 24:琢面化光瞳鏡面裝置 26:經圖案化光束 28:反射元件 30:反射元件 100:微影設備 210:EUV輻射發射電漿 211:源腔室 212:收集器腔室 220:圍封結構 221:開口 300:遮罩 310:基板 320:多層堆疊 321:對 322:相對高折射率層 323:相對低折射率層 330:封蓋層 340:吸收體層 410:入射EUV輻射光束 421:經反射光束 422:經反射光束 431:有效反射平面 432:有效反射平面 500:控制器 B:輻射光束 C:目標部分 CO:輻射收集器 IF:虛擬源點 IL:照明系統 M1:遮罩對準標記 M2:遮罩對準標記 MA:圖案化裝置 MT:支撐結構 P1:基板對準標記 P2:基板對準標記 PM:第一*** PS:投影系統 PS1:位置感測器 PS2:位置感測器 PW:第二*** SO:源收集器模組 W:基板 WT:基板台 21: unpatterned beam 22: faceted field mirror device 24: faceted pupil mirror device 26: patterned beam 28: reflective element 30: reflective element 100: lithography apparatus 210: EUV radiation emitting plasma 211: source chamber 212: collector chamber 220: enclosure 221: opening 300: mask 310: substrate 320: multi-layer stack 321: pair 322: relatively high refractive index layer 323: relatively low refractive index layer 330: capping layer 340: absorber layer 410: incident EUV radiation beam 421: reflected beam 422: Reflected beam 431: Effective reflection plane 432: Effective reflection plane 500: Controller B: Radiation beam C: Target part CO: Radiation collector IF: Virtual source point IL: Illumination system M1: Mask alignment mark M2: Mask alignment mark MA: Patterning device MT: Support structure P1: Substrate alignment mark P2: Substrate alignment mark PM: First positioner PS: Projection system PS1: Position sensor PS2: Position sensor PW: Second positioner SO: Source collector module W: Substrate WT: Substrate stage
現將參考隨附示意性圖式而僅藉助於實例來描述本發明之實施例，在該等圖式中，對應參考符號指示對應部件。Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference characters indicate corresponding parts.
圖1示意性地描繪微影設備。FIG1 schematically depicts a lithography apparatus.
圖2描繪微影設備之更詳細視圖。FIG2 depicts a more detailed view of the lithography equipment.
圖3以橫截面描繪EUV遮罩之實例。FIG3 depicts an example of an EUV mask in cross section.
圖4以橫截面描繪展示兩個經反射光束之EUV遮罩。FIG. 4 is a cross-sectional depiction of an EUV mask showing two reflected beams.
圖5描繪Mo-Si多層堆疊及Ru-Si多層堆疊之豎直軸線上之反射率及水平軸線上之多層對之數目的曲線圖。FIG. 5 plots the reflectivity on the vertical axis and the number of multilayer pairs on the horizontal axis for a Mo-Si multilayer stack and a Ru-Si multilayer stack.
圖6描繪數個元素及合金之豎直軸線上之吸收係數及水平軸線上之折射率的曲線圖。FIG. 6 plots the absorption coefficient on the vertical axis and the refractive index on the horizontal axis for several elements and alloys.
圖7描繪數個多層堆疊組態之豎直軸線上之反射率及水平軸線上之多層對之數目的曲線圖。FIG. 7 plots reflectivity on the vertical axis and the number of multilayer pairs on the horizontal axis for several multilayer stacking configurations.
圖8描繪數個多層堆疊組態之豎直軸線上之反射率及水平軸線上之波長的曲線圖。FIG8 plots reflectivity on the vertical axis and wavelength on the horizontal axis for several multi-layer stack configurations.
圖9描繪數個多層堆疊組態之豎直軸線上之反射率及水平軸線上之入射角的曲線圖。FIG. 9 plots reflectivity on the vertical axis versus incident angle on the horizontal axis for several multi-layer stack configurations.
320:多層堆疊 320:Multi-layer stacking
321:對 321: Yes
322:相對高折射率層 322: Relatively high refractive index layer
323:相對低折射率層 323: Relatively low refractive index layer
330:封蓋層 330: Sealing layer
340:吸收體層 340: Absorbent layer
410:入射EUV輻射光束 410: Incident EUV radiation beam
421:經反射光束 421: Reflected beam
422:經反射光束 422: Reflected beam
431:有效反射平面 431:Effective reflection plane
432:有效反射平面 432: Effective reflection plane
Claims (20)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63/393,874 | 2022-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202414071A true TW202414071A (en) | 2024-04-01 |
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