TW202411750A - Electrode structure with hollow micro-patterns and device including the same - Google Patents

Abstract

The present invention relates to an electrode structure with hollow micro-patterns and a manufacturing method thereof. The electrode structure has a transparent electrode layer formed with hollow micro-patterns. The hollow micro-patterns includes a plurality of cross patterns, and the cross patterns are composed of a first hollow section and a second hollow section, and neither the first hollow section nor the second hollow section is a straight section. A device comprising the above electrode structure.

Description

具有鏤空圖案之電極結構及其裝置Electrode structure with hollow pattern and device thereof

本發明係有關於一種具有鏤空圖案之電極結構及其裝置，特別是關於一種肉眼不可見之電極結構及其裝置。The present invention relates to an electrode structure with a hollow pattern and a device thereof, and in particular to an electrode structure invisible to the naked eye and a device thereof.

近年來，透明導電膜應用於如平面顯示器、電子紙顯示器、OLED顯示器、觸控顯示器、太陽能電池板等光電產品中，因此透明導電膜已成為光電產品架構裡的關鍵零組件。其中，具有可撓性、高光源穿透效果、高導電度透明導電膜應用多元，也能為新穎電子產品創造更多賣點。In recent years, transparent conductive films have been used in optoelectronic products such as flat panel displays, electronic paper displays, OLED displays, touch displays, and solar panels. Therefore, transparent conductive films have become key components in the architecture of optoelectronic products. Among them, transparent conductive films with flexibility, high light source penetration, and high conductivity have multiple applications and can also create more selling points for new electronic products.

現有技術中，透明導電膜通常需要進行電極圖案化處理，以形成觸控電極。圖案化處理的方式可為雷射(即乾式蝕刻)或化學濕蝕刻，而藉由上述蝕刻步驟所移除的部分即稱為非電極區或蝕刻區，由於蝕刻區的光學性質，例如霧度、穿透率、色度等與電極區不同，造成人眼可明顯識別的蝕刻痕，也就是當兩個區域的光學性質差異過大，使用者就容易觀察到兩區域之間的界線(即蝕刻線/蝕刻痕，故也可以稱作蝕刻線/蝕刻痕的可視性問題)，從而影響觸控式螢幕視覺效果。因此亟需降低上述光學差異，減少被使用者看到的風險。In the prior art, transparent conductive films usually need to be patterned to form touch electrodes. The patterning process can be laser (i.e. dry etching) or chemical wet etching, and the portion removed by the above etching step is called the non-electrode area or the etched area. Since the optical properties of the etched area, such as haze, transmittance, chromaticity, etc., are different from those of the electrode area, the human eye can clearly see the etched marks. That is, when the optical properties of the two areas are too different, users can easily observe the boundary between the two areas (i.e. etched lines/etched marks, so it can also be called the visibility problem of etched lines/etched marks), thereby affecting the visual effect of the touch screen. Therefore, it is urgent to reduce the above optical differences and reduce the risk of being seen by users.

台灣專利公開號TW201211866(以下簡稱TW866)公開一種在具有鏤空部的觸控電極，以提升整體透光率。TW866所公開的鏤空部是重複設置完全相同的挖空圖樣在電極上，如其圖1、圖6、圖8等等，然而對人眼來說，重複性的圖案可能會形成光學的干涉效果，例如摩爾紋(Moire)等，故TW866所公開的鏤空觸控電極雖然可以提高光線的穿透度，但也可能會造成使用者在觀看螢幕時的品質受到影響。Taiwan Patent Publication No. TW201211866 (hereinafter referred to as TW866) discloses a touch electrode with a hollow portion to improve the overall light transmittance. The hollow portion disclosed in TW866 is to repeatedly set the same hollow pattern on the electrode, such as Figure 1, Figure 6, Figure 8, etc. However, for the human eye, the repetitive pattern may form an optical interference effect, such as Moire, etc. Therefore, although the hollow touch electrode disclosed in TW866 can improve the transmittance of light, it may also affect the quality of the user's viewing of the screen.

因此，鑒於上述缺失，遂有本發明之產生。Therefore, in view of the above-mentioned deficiencies, the present invention is produced.

本發明的目的係提供一種具有鏤空圖案之電極結構，其中，電極結構據有鏤空圖案，其可以達到本發明之電極結構具有導電度和透明度的優異平衡，在不影響電性的情況下，可降低蝕刻痕之可視性。The object of the present invention is to provide an electrode structure with a hollow pattern, wherein the electrode structure with the hollow pattern can achieve an excellent balance between conductivity and transparency of the electrode structure of the present invention, and can reduce the visibility of etching marks without affecting the electrical properties.

本發明又一目的係提供一種具有鏤空圖案之電極結構，電極結構的鏤空圖案由第一鏤空段以及第二鏤空段所組成，第一鏤空段以及第二鏤空段均具有一曲率半徑，可避免直線型鏤空圖案可能產生的光學干涉現象Another object of the present invention is to provide an electrode structure with a hollow pattern. The hollow pattern of the electrode structure is composed of a first hollow segment and a second hollow segment. The first hollow segment and the second hollow segment both have a curvature radius, which can avoid the optical interference phenomenon that may be generated by the straight hollow pattern.

本發明之具有鏤空圖案之電極結構，包括：基板；以及透明電極層，設置於基板上，透明電極層形成有鏤空圖案；其中，鏤空圖案包含有複數交叉圖案，每一交叉圖案由一曲率不等於零的第一鏤空段以及一曲率不等於零的第二鏤空段組成，在相鄰的交叉圖案中，第一鏤空段以及第二鏤空段的其中之一實質相同，而第一鏤空段以及第二鏤空段的其中另一實質不相同。The electrode structure with a hollow pattern of the present invention includes: a substrate; and a transparent electrode layer, which is arranged on the substrate, and the transparent electrode layer forms a hollow pattern; wherein the hollow pattern includes a plurality of cross patterns, each cross pattern is composed of a first hollow segment with a curvature not equal to zero and a second hollow segment with a curvature not equal to zero, and in adjacent cross patterns, one of the first hollow segment and the second hollow segment is substantially the same, and the other of the first hollow segment and the second hollow segment is substantially different.

較佳地，根據本發明之電極結構，其中，第一鏤空段以及第二鏤空段分別朝第一方向以及第二方向延伸，第一交叉圖案與第二交叉圖案沿第一方向相鄰，第一交叉圖案的第二鏤空段與第二交叉圖案該第二鏤空段具有實質相同的寬度、曲率半徑及曲率中心相對位置；第一交叉圖案的第一鏤空段與第二交叉圖案的第一鏤空段具有實質相同的寬度及曲率半徑，第一交叉圖案的第一鏤空段與第二交叉圖案的第一鏤空段的曲率中心相對位置不同。Preferably, according to the electrode structure of the present invention, the first hollow segment and the second hollow segment extend in the first direction and the second direction respectively, the first cross pattern and the second cross pattern are adjacent to each other along the first direction, the second hollow segment of the first cross pattern and the second hollow segment of the second cross pattern have substantially the same width, radius of curvature and relative position of the center of curvature; the first hollow segment of the first cross pattern and the first hollow segment of the second cross pattern have substantially the same width and radius of curvature, and the first hollow segment of the first cross pattern and the first hollow segment of the second cross pattern have different relative positions of the centers of curvature.

較佳地，根據本發明之電極結構，其中，第一鏤空段以及第二鏤空段分別朝第一方向以及第二方向延伸，第一交叉圖案與第三交叉圖案沿第二方向相鄰，第一交叉圖案的第一鏤空段與第三交叉圖案的第一鏤空段具有實質相同的寬度、曲率半徑及曲率中心相對位置；第一交叉圖案的第二鏤空段與第三交叉圖案的第二鏤空段具有實質相同的寬度及曲率半徑，第一交叉圖案的第二鏤空段與第三交叉圖案的第二鏤空段的曲率中心相對位置不同。Preferably, according to the electrode structure of the present invention, the first hollow segment and the second hollow segment extend in the first direction and the second direction respectively, the first cross pattern and the third cross pattern are adjacent to each other along the second direction, the first hollow segment of the first cross pattern and the first hollow segment of the third cross pattern have substantially the same width, radius of curvature and relative position of the center of curvature; the second hollow segment of the first cross pattern and the second hollow segment of the third cross pattern have substantially the same width and radius of curvature, and the second hollow segment of the first cross pattern and the second hollow segment of the third cross pattern have different relative positions of the centers of curvature.

較佳地，根據本發明之電極結構，其中，第一鏤空段的曲率半徑約為0.41mm，第二鏤空段的曲率半徑約為0.42mm。Preferably, according to the electrode structure of the present invention, the radius of curvature of the first hollow section is approximately 0.41 mm, and the radius of curvature of the second hollow section is approximately 0.42 mm.

較佳地，根據本發明之電極結構，其中，透明電極層至少包含一奈米銀線層，鏤空圖案佔該透明電極層的面積比例約為2%-5%之間。Preferably, according to the electrode structure of the present invention, the transparent electrode layer at least includes a nanosilver wire layer, and the hollow pattern occupies an area ratio of about 2%-5% of the transparent electrode layer.

較佳地，根據本發明之電極結構，其中，該透明電極層至少包含一奈米銀線層，該鏤空圖案佔該透明電極層的面積比例約小於7%。Preferably, according to the electrode structure of the present invention, the transparent electrode layer at least includes a nanosilver wire layer, and the hollow pattern accounts for less than 7% of the area of the transparent electrode layer.

較佳地，根據本發明之電極結構，其中，電極結構具有虛擬電極，虛擬電極形成有鏤空圖案，虛擬電極區上的鏤空圖案之複數第一鏤空段以及複數第二鏤空段的曲率皆不等於零。Preferably, according to the electrode structure of the present invention, the electrode structure has a virtual electrode, the virtual electrode is formed with a hollow pattern, and the curvatures of the plurality of first hollow segments and the plurality of second hollow segments of the hollow pattern on the virtual electrode region are not equal to zero.

又，本發明進一步提供一種裝置，如一種顯示裝置，其係包含有如上所述之電極結構。Moreover, the present invention further provides a device, such as a display device, which includes the electrode structure as described above.

綜上所述，本發明所提供之電極結構，電極結構具有交叉圖案，其實質上由非直線的第一鏤空段以及非直線的第二鏤空段所組成，且相鄰的交叉圖案中所對應的鏤空段在寬度、曲率半徑及曲率中心相對位置等的三個條件中至少有一個實質不同，也就是說，相鄰的交叉圖案不是實質上相同的圖案可避免重複排列的鏤空圖案可能產生的光學干涉現象，例如相鄰的交叉圖案的第一鏤空段的寬度不同；或者相鄰的交叉圖案的第一鏤空段的曲率半徑不同；或者相鄰的交叉圖案的第一鏤空段的曲率中心相對位置。又或者相鄰的交叉圖案的第一鏤空段的寬度與曲率中心相對位置均不同等的實施方法。據此，本發明可以達到解決或降低蝕刻線/蝕刻痕的可視性問題。In summary, the electrode structure provided by the present invention has a cross pattern, which is essentially composed of a non-straight first hollow segment and a non-straight second hollow segment, and the corresponding hollow segments in adjacent cross patterns are essentially different in at least one of the three conditions of width, radius of curvature and relative position of the center of curvature. In other words, the adjacent cross patterns are not essentially the same pattern to avoid optical interference phenomena that may be caused by repeated arrangement of hollow patterns, such as the widths of the first hollow segments of adjacent cross patterns are different; or the curvature radii of the first hollow segments of adjacent cross patterns are different; or the relative positions of the curvature centers of the first hollow segments of adjacent cross patterns are different. Alternatively, the width of the first hollowing segments of adjacent cross patterns and the relative positions of the curvature centers are different. Accordingly, the present invention can solve or reduce the visibility problem of etching lines/etching marks.

為使熟悉所屬技術領域中具有通常知識者瞭解本發明之目的、特徵及功效，茲藉由下述具體實施例，並配合所附圖式，對本發明詳加說明。In order to enable those skilled in the art to understand the purpose, features and effects of the present invention, the present invention is described in detail through the following specific embodiments in conjunction with the attached drawings.

以下將參照所附圖式，更詳細地闡述依據本發明的示例性實施例，本發明的優點、特徵及其達成方法將顯而易見。然而，應注意的是，本發明並非僅限於以下示例性實施例，而是可以各種形式來實施。The following will be described in more detail with reference to the attached drawings according to exemplary embodiments of the present invention, and the advantages, features and methods of achieving the present invention will be apparent. However, it should be noted that the present invention is not limited to the following exemplary embodiments, but can be implemented in various forms.

本文所用術語僅用於闡述特定實施例，並非旨在限制本發明。除非上下文中清楚地另外指明，否則本文所用的單數形式的用語「一」及「該」亦包括複數形式。The terms used herein are only used to describe specific embodiments and are not intended to limit the present invention. Unless the context clearly indicates otherwise, the singular forms of the terms "a", "an" and "the" used herein also include plural forms.

此外，應理解的是，當稱一個元件位於另一元件「上」時，所述元件可直接位於所述另一元件上，或可存在中間元件。另外，文中若無明確說明，所提及的數值，例如厚度、寬度、曲率半徑等並非絕對而可視為近似值，即具有如「約」、「大約」或「大致」所表示的誤差或範圍，本領域通常知識者可理解所指的數值，例如厚度、寬度、曲率半徑等可能包含製作公差、量測誤差等，本文所指數值的誤差或範圍可介於正負20%以內，或是介於正負10%以內，或是介於正負5%以內。In addition, it should be understood that when an element is said to be "on" another element, the element may be directly on the other element, or there may be an intermediate element. In addition, if not explicitly stated in the text, the numerical values mentioned, such as thickness, width, radius of curvature, etc., are not absolute but may be regarded as approximate values, that is, they have errors or ranges as represented by "about", "approximately" or "roughly". A person of ordinary skill in the art may understand that the numerical values referred to, such as thickness, width, radius of curvature, etc., may include manufacturing tolerances, measurement errors, etc. The errors or ranges of the numerical values referred to herein may be within plus or minus 20%, or within plus or minus 10%, or within plus or minus 5%.

亦應理解，儘管本文中可能使用用語「第一」、「第二」等來闡述各種元件，然而，該些元件不應受限於該些用語。該些用語僅用於區分各個元件。因此，某些實施例中的第一元件可在其他實施例中被稱為第二元件，並不背離本發明的教示內容。在本說明書中，相同的參考編號表示相同的元件。It should also be understood that although the terms "first", "second", etc. may be used herein to describe various components, these components should not be limited to these terms. These terms are only used to distinguish between various components. Therefore, the first component in some embodiments may be referred to as the second component in other embodiments without departing from the teachings of the present invention. In this specification, the same reference numerals represent the same components.

請參照圖1至圖3所示，圖1為根據本發明之電極結構例示性的示意圖，其為一種感應觸控的電極結構；圖2為根據本發明之透明電極層的鏤空圖案的示意圖；以及圖3為圖2中的鏤空圖案的放大示意圖。具有鏤空圖案之電極結構100包括基板11以及透明電極層12，具體的透明電極層12將於後文詳述。透明電極層12係設置於該基板11上，透明電極層12形成有如圖2所繪的鏤空圖案13，也就是說，透明電極層12的材料會依照鏤空圖案13被清除，藉以調整透明電極層12的非蝕刻區(即電極) 與蝕刻區(即電極與電極之間的區域)的光學特性差異，降低前述的使用者可視的問題。Please refer to FIG. 1 to FIG. 3 , FIG. 1 is an exemplary schematic diagram of an electrode structure according to the present invention, which is an inductive touch electrode structure; FIG. 2 is a schematic diagram of a hollow pattern of a transparent electrode layer according to the present invention; and FIG. 3 is an enlarged schematic diagram of the hollow pattern in FIG. 2 . The electrode structure 100 with a hollow pattern includes a substrate 11 and a transparent electrode layer 12, and the specific transparent electrode layer 12 will be described in detail later. The transparent electrode layer 12 is disposed on the substrate 11. The transparent electrode layer 12 forms a hollow pattern 13 as shown in FIG. 2 . That is, the material of the transparent electrode layer 12 is removed according to the hollow pattern 13 to adjust the difference in optical properties between the non-etched area (i.e., the electrode) and the etched area (i.e., the area between the electrodes) of the transparent electrode layer 12, thereby reducing the aforementioned user visibility problem.

具體地，在一些實施例中，基板11可以但不限於為玻璃基板、聚對苯二甲酸乙二酯(PET)基板、環烯烴聚合物(COP)基板、透明聚醯亞胺(CPI)基板、聚萘二甲酸乙二酯(PEN)基板、聚碳酸脂(PC)基板、聚醚碸(PES)基板等等；另外，基板11可具有乘載電極的功能，也可以額外提供光學功能，例如基板11可以是相位差膜或偏光膜等。Specifically, in some embodiments, the substrate 11 may be, but is not limited to, a glass substrate, a polyethylene terephthalate (PET) substrate, a cycloolefin polymer (COP) substrate, a transparent polyimide (CPI) substrate, a polyethylene naphthalate (PEN) substrate, a polycarbonate (PC) substrate, a polyether sulfide (PES) substrate, etc.; in addition, the substrate 11 may have the function of carrying electrodes, and may also provide additional optical functions, for example, the substrate 11 may be a phase difference film or a polarizing film, etc.

具體地，請參照圖1所示，透明電極層12設置在基板11上。在一些實施例中，透明電極層12包括一觸控電極層，設置在基板11上。舉例來說，可以形成如圖1所示的架橋式的電極結構，其亦或稱作單層電極結構，觸控電極層包括複數個第一軸向觸控電極121及複數個第二軸向觸控電極124，第一軸向與第二軸向觸控電極121,124之間具有藉由蝕刻步驟所形成的非電極區，而第一軸向或第二軸向觸控電極121,124上會形成圖2所示的鏤空圖案13，藉以調整非蝕刻區(即第一軸向與第二軸向觸控電極121,124)與蝕刻區的光學特性差異。在圖1中，蝕刻區會填入絕緣層122，架橋結構123可以設置在絕緣層122上以連接第一軸向觸控電極121。本發明也可以使用其他適合的觸控感測結構，不應被解釋為僅限於此。根據一些實施例，觸控感測結構可以包括選自金屬氧化物，如氧化銦錫(ITO)，或是金屬網格(metal mesh)、奈米銀線(silver nanowire, SNW)、奈米碳管(carbon nanotube,  CNT)、石墨烯(graphene)、或導電高分子如聚3,4-乙烯二氧噻吩(poly(3,4-ethylenedioxythiophene) , PEDOT)等的材料，特別是觸控電極層可以使用這些材料中的一或更多者來形成。觸控感測結構及其觸控電極層可以使用其他適合的材料。根據一些實施例，絕緣層122的材料可為絕緣（非導電）的樹脂或其他有機材料。舉例而言，絕緣層122可包括聚乙烯、聚丙烯、聚乙烯醉缩丁醛、聚碳酸酯、丙烯腈-丁烯-苯乙烯共聚物、聚（苯乙烯磺酸）、陶瓷或上述任意之組合。Specifically, referring to FIG1 , the transparent electrode layer 12 is disposed on the substrate 11. In some embodiments, the transparent electrode layer 12 includes a touch electrode layer disposed on the substrate 11. For example, a bridge-type electrode structure as shown in FIG. 1 can be formed, which is also called a single-layer electrode structure. The touch electrode layer includes a plurality of first-axial touch electrodes 121 and a plurality of second-axial touch electrodes 124. A non-electrode region formed by an etching step is provided between the first-axial and second-axial touch electrodes 121, 124, and a hollow pattern 13 as shown in FIG. 2 is formed on the first-axial or second-axial touch electrodes 121, 124 to adjust the difference in optical properties between the non-etched region (i.e., the first-axial and second-axial touch electrodes 121, 124) and the etched region. In FIG. 1 , the etched area is filled with an insulating layer 122, and a bridge structure 123 can be disposed on the insulating layer 122 to connect the first axial touch electrode 121. The present invention can also use other suitable touch sensing structures and should not be construed as being limited thereto. According to some embodiments, the touch sensing structure can include a material selected from metal oxides, such as indium tin oxide (ITO), or metal mesh, silver nanowire (SNW), carbon nanotube (CNT), graphene, or conductive polymers such as poly (3,4-ethylenedioxythiophene) (PEDOT), and in particular, the touch electrode layer can be formed using one or more of these materials. The touch sensing structure and its touch electrode layer may use other suitable materials. According to some embodiments, the material of the insulating layer 122 may be an insulating (non-conductive) resin or other organic material. For example, the insulating layer 122 may include polyethylene, polypropylene, polyvinyl butyral, polycarbonate, acrylonitrile-butylene-styrene copolymer, poly(styrene sulfonic acid), ceramic, or any combination thereof.

更具體而言，在一實施例中，透明電極層12是由奈米銀線所製作，所使用的方法可以是將含奈米銀線的分散液塗佈在基板11上，例如將奈米銀線混入溶劑，例如：水、醇、酮、醚、烴或芳族溶劑(苯、甲苯、二甲苯等)形成塗料/漿料；上述塗料/漿料亦可包含添加劑、介面活性劑或黏合劑，例如：羧甲基纖維素(carboxymethyl cellulose, CMC)、2-羥乙基纖維素(hydroxyethyl Cellulose,  HEC)、羥基丙基甲基纖維素(hydroxypropyl methylcellulose, HPMC)、磺酸酯、硫酸酯、二磺酸鹽、磺基琥珀酸酯、磷酸酯或含氟界面活性劑等。塗佈完成後，再通過固化步驟形成奈米銀線層，此奈米銀線層即可再利用本領域人員公知的圖案化方法(例如利用光阻的黃光微影製程搭配蝕刻製程等等)形成所述的透明電極層12。More specifically, in one embodiment, the transparent electrode layer 12 is made of silver nanowires. The method used may be to coat a dispersion containing silver nanowires on the substrate 11, for example, mixing the silver nanowires into a solvent, such as water, alcohol, ketone, ether, hydrocarbon or aromatic solvent (benzene, toluene, xylene, etc.) to form a coating/slurry; the coating/slurry may also include additives, surfactants or binders, such as carboxymethyl cellulose (CMC), 2-hydroxyethyl cellulose (HEC), hydroxypropyl methylcellulose (HPMC), sulfonates, sulfates, disulfonates, sulfosuccinates, phosphates or fluorine-containing surfactants. After coating, a curing step is performed to form a nanosilver wire layer, and the nanosilver wire layer can be further patterned to form the transparent electrode layer 12 using a patterning method known to those skilled in the art (such as a photolithography process using photoresist combined with an etching process, etc.).

較佳地，在一實施例中，可進一步設置高分子層，使高分子層覆蓋於奈米銀線層上。在具體實施例中，將適當的高分子/聚合物塗布于奈米銀線層上，具有流動狀態/性質的聚合物可以滲入奈米銀線之間而形成填充物，奈米銀線會嵌入高分子/聚合物中，待高分子固化後即形成複合結構。也就是說，在此步驟中，塗布高分子/聚合物以外加高分子層於奈米銀線層上，而奈米銀線會內嵌於高分子層而形成複合結構。于本發明的部分實施方式中，高分子層由絕緣材料所形成。舉例而言，高分子層的材料可以是非導電的樹脂或其他有機材料，諸如聚丙烯酸酯、環氧樹脂、聚胺基甲酸酯、聚矽烷、聚矽氧、聚(矽-丙烯酸)、聚乙烯(polyethylene；PE)、聚丙烯(Polypropylene；PP)、聚乙烯醇縮丁醛（Polyvinyl butyral；PVB)、聚碳酸酯(polycarbonate；PC)、丙烯腈-丁二烯-苯乙烯共聚物(Acrylonitrile butadiene styrene；ABS)等等。于本發明的部分實施方式中，可以藉由旋塗、噴塗、印刷等方式形成高分子層。於部分實施方式中，高分子層的厚度大約為20nm至10mm、或50nm至200nm、或30nm至100nm，舉例而言，高分子層的厚度大約可為90nm或100nm。以上所述具體作法可參照並全文引入US20190227650A、CN101292362等文獻，而奈米銀線漿料與高分子塗布物均由供應商Cambrios提供。Preferably, in one embodiment, a polymer layer can be further provided so that the polymer layer covers the nanosilver wire layer. In a specific embodiment, a suitable polymer/polymer is coated on the nanosilver wire layer, and the polymer with a flowing state/property can penetrate between the nanosilver wires to form a filler, and the nanosilver wires will be embedded in the polymer/polymer, and a composite structure will be formed after the polymer is solidified. That is to say, in this step, a polymer/polymer is coated on the nanosilver wire layer, and the nanosilver wires will be embedded in the polymer layer to form a composite structure. In some embodiments of the present invention, the polymer layer is formed of an insulating material. For example, the material of the polymer layer can be a non-conductive resin or other organic material, such as polyacrylate, epoxy resin, polyurethane, polysilane, polysiloxane, poly(silicon-acrylic acid), polyethylene (PE), polypropylene (PP), polyvinyl butyral (PVB), polycarbonate (PC), acrylonitrile-butadiene-styrene (ABS), etc. In some embodiments of the present invention, the polymer layer can be formed by spin coating, spray coating, printing, etc. In some embodiments, the thickness of the polymer layer is about 20nm to 10mm, or 50nm to 200nm, or 30nm to 100nm. For example, the thickness of the polymer layer can be about 90nm or 100nm. The specific methods described above can be referred to and fully incorporated in documents such as US20190227650A and CN101292362, and the nanosilver wire slurry and polymer coating are provided by the supplier Cambrios.

具體地，根據一些實施例，電極結構100可以更包括一隔離層，隔離層設置為電極結構100的最上層。在本發明中，用詞「隔離」涵蓋電性隔離及物理隔離二個方面。隔離層可以為無機封裝材料的單層、無機封裝材料的多層堆疊、或成對的無機封裝材料與有機封裝材料的堆疊。所使用的無機封裝材料例如但不限於為氮化矽(SiN _x)、氧化矽(SiO _x)、氮氧化矽(SiON _x)、氧化鋁(AlO _x)、或氧化鈦(TiO _x)。 Specifically, according to some embodiments, the electrode structure 100 may further include an isolation layer, which is disposed as the top layer of the electrode structure 100. In the present invention, the term "isolation" covers both electrical isolation and physical isolation. The isolation layer may be a single layer of an inorganic encapsulation material, a stack of multiple layers of an inorganic encapsulation material, or a stack of a pair of an inorganic encapsulation material and an organic encapsulation material. The inorganic encapsulation material used is, for example but not limited to, silicon nitride ( _SiNx ), silicon oxide ( _SiOx ), silicon oxynitride ( _SiONx ), aluminum oxide ( _AlOx ), or titanium oxide ( _TiOx ).

本發明鏤空圖案13包含有成型於透明電極層12的複數交叉圖案，每一交叉圖案實質由兩個鏤空段相交所組成，且相交的兩鏤空段的曲率均不為零(也可以定義成曲率半徑不等於無窮大，即非直線)，且在本發明的圖案，相鄰的交叉圖案中，所述兩個鏤空段的其中之一會實質相同，而其中另一則實質不相同。透明電極層12可以採用前述奈米銀線層及高分子層，並利用圖案化製程將鏤空圖案13製作於其上；或者透明電極層12可以採用複合形式的材料，如奈米銀線層與高分子層組合搭配上金屬氧化物(如ITO)，並同樣利用圖案化製程將鏤空圖案13製作於其上。值得說明的是，由於本發明實施例的圖案是非直線的線段，為了更容易理解，下文均會以線段的曲率半徑進行說明，例如”線段的曲率半徑不等於無窮大”可理解成”線段的曲率半徑小於無窮大”，也可以理解成所述線段並非直線。The hollow pattern 13 of the present invention includes a plurality of cross patterns formed on the transparent electrode layer 12, each cross pattern is substantially composed of two hollow segments intersecting, and the curvature of the two intersecting hollow segments is not zero (it can also be defined as the radius of curvature is not equal to infinity, that is, it is not a straight line), and in the pattern of the present invention, in adjacent cross patterns, one of the two hollow segments will be substantially the same, while the other will be substantially different. The transparent electrode layer 12 may be made of the aforementioned nanosilver wire layer and polymer layer, and a hollow pattern 13 may be formed thereon by a patterning process; or the transparent electrode layer 12 may be made of a composite material, such as a nanosilver wire layer and a polymer layer combined with a metal oxide (such as ITO), and a hollow pattern 13 may be formed thereon by a patterning process. It is worth noting that, since the pattern of the embodiment of the present invention is a non-straight line segment, for easier understanding, the following description will be made in terms of the curvature radius of the line segment, for example, "the curvature radius of the line segment is not equal to infinity" can be understood as "the curvature radius of the line segment is less than infinity", and can also be understood as the line segment is not a straight line.

具體地，請參閱圖2與圖3，根據圖2，本發明鏤空圖案13可包含重複設置的鏤空圖案組，例如第一鏤空圖案組130A與第二鏤空圖案組130B是實質相同的圖案設計，也就是說，鏤空圖案13是根據鏤空圖案組重複排列而成。後文主要以第一鏤空圖案組130A進行說明，其他重複的圖案組就依此進行製作。Specifically, please refer to FIG. 2 and FIG. 3. According to FIG. 2, the hollow pattern 13 of the present invention may include a hollow pattern group that is repeatedly arranged. For example, the first hollow pattern group 130A and the second hollow pattern group 130B are substantially the same pattern design, that is, the hollow pattern 13 is formed by repeatedly arranging the hollow pattern group. The following text mainly describes the first hollow pattern group 130A, and other repeated pattern groups are made accordingly.

如圖3所示，第一鏤空圖案組130A至少有4個交叉圖案，包括第一交叉圖案131、第二交叉圖案132、第三交叉圖案133及第四交叉圖案134。具體而言，第一交叉圖案131由具有第一預定曲率半徑(即曲率半徑不等於無窮大)的第一鏤空段1311以及具有第二預定曲率半徑(即曲率半徑不等於無窮大)的第二鏤空段1312組成。第一鏤空段1311實質上沿第一方向(如圖2、圖3所示的X軸)延伸，值得說明的是，由於第一鏤空段1311不是曲率為零的直線，故前文所述” 第一鏤空段1311實質上沿第一方向延伸”意指為雖然第一鏤空段1311不與第一方向(即X軸)完全平行，但從整體圖案觀之，可以認定第一鏤空段1311大致上是沿著第一方向(即X軸)延伸成型；類同的，第二鏤空段1312實質上沿第二方向(如圖2、圖3所示的Y軸)延伸，而第一方向與第二方向可以相互垂直(如本實施例的X軸與Y軸)，但本發明不以此為限。另外，與第一交叉圖案131相似，第二交叉圖案132由具有預定曲率半徑(即曲率半徑不等於無窮大)的第一鏤空段1321以及具有預定曲率半徑(即曲率半徑不等於無窮大)的第二鏤空段1322組成；第三交叉圖案133由具有預定曲率半徑(即曲率半徑不等於無窮大)的第一鏤空段1331以及具有預定曲率半徑(即曲率半徑不等於無窮大)的第二鏤空段1332組成；而第四交叉圖案134由具有預定曲率半徑(即曲率半徑不等於無窮大)的第一鏤空段1341以及具有預定曲率半徑(即曲率半徑不等於無窮大)的第二鏤空段1342組成。As shown in FIG3 , the first hollow pattern group 130A has at least four cross patterns, including a first cross pattern 131, a second cross pattern 132, a third cross pattern 133, and a fourth cross pattern 134. Specifically, the first cross pattern 131 is composed of a first hollow segment 1311 having a first predetermined radius of curvature (i.e., the radius of curvature is not equal to infinity) and a second hollow segment 1312 having a second predetermined radius of curvature (i.e., the radius of curvature is not equal to infinity). The first hollow section 1311 substantially extends along the first direction (such as the X-axis shown in Figures 2 and 3). It is worth noting that since the first hollow section 1311 is not a straight line with zero curvature, the above-mentioned "the first hollow section 1311 substantially extends along the first direction" means that although the first hollow section 1311 is not completely parallel to the first direction (i.e., the X-axis), from the overall pattern, it can be determined that the first hollow section 1311 is generally extended along the first direction (i.e., the X-axis); similarly, the second hollow section 1312 substantially extends along the second direction (such as the Y-axis shown in Figures 2 and 3), and the first direction and the second direction can be perpendicular to each other (such as the X-axis and the Y-axis in this embodiment), but the present invention is not limited to this. In addition, similar to the first cross pattern 131, the second cross pattern 132 is composed of a first hollow section 1321 having a predetermined radius of curvature (i.e., the radius of curvature is not equal to infinity) and a second hollow section 1322 having a predetermined radius of curvature (i.e., the radius of curvature is not equal to infinity); the third cross pattern 133 is composed of a first hollow section 1321 having a predetermined radius of curvature (i.e., the radius of curvature is not equal to infinity) and a second hollow section 1322 having a predetermined radius of curvature (i.e., the radius of curvature is not equal to infinity). The fourth cross pattern 134 is composed of a first hollow segment 1341 with a predetermined curvature radius (i.e., the curvature radius is not equal to infinity) and a second hollow segment 1342 with a predetermined curvature radius (i.e., the curvature radius is not equal to infinity).

接著，以下說明兩個相鄰的交叉圖案的關係。本文中所指的”相鄰”係指在第一方向(如圖2、圖3所示的X軸)上或第二方向(如圖2、圖3所示的Y軸)上處於隔壁的位置關係，例如圖3，第一交叉圖案131與第二交叉圖案132即為在X軸上的相鄰位置，第二交叉圖案132及第四交叉圖案134即為在Y軸上的相鄰位置。但是，第一交叉圖案131與第四交叉圖案134並不在同一個X軸上或同一個Y軸上，故第一交叉圖案131與第四交叉圖案134就不是本文所指的相鄰的交叉圖案。另外，不同的鏤空圖案組的交叉圖案只要在X軸上或Y軸上有相鄰位置關係，也屬於本文指的相鄰的交叉圖案，如圖2所示，第一鏤空圖案組130A的第二交叉圖案132與第二鏤空圖案組130B的第一交叉圖案131也屬於本文指的相鄰的交叉圖案。Next, the relationship between two adjacent cross patterns is described below. The term "adjacent" as used herein refers to a positional relationship that is adjacent to each other in a first direction (such as the X-axis shown in FIG. 2 and FIG. 3 ) or in a second direction (such as the Y-axis shown in FIG. 2 and FIG. 3 ). For example, in FIG. 3 , the first cross pattern 131 and the second cross pattern 132 are adjacent positions on the X-axis, and the second cross pattern 132 and the fourth cross pattern 134 are adjacent positions on the Y-axis. However, the first cross pattern 131 and the fourth cross pattern 134 are not on the same X-axis or the same Y-axis, so the first cross pattern 131 and the fourth cross pattern 134 are not adjacent cross patterns as used herein. In addition, as long as the cross patterns of different hollow pattern groups have adjacent positions on the X-axis or the Y-axis, they also belong to the adjacent cross patterns referred to in this article. As shown in Figure 2, the second cross pattern 132 of the first hollow pattern group 130A and the first cross pattern 131 of the second hollow pattern group 130B also belong to the adjacent cross patterns referred to in this article.

在本發明的圖案設計裡，相鄰的交叉圖案中，兩個相交的鏤空段的其中之一實質相同，而其中另一則實質不相同。請參考圖3，相鄰的第一交叉圖案131與第二交叉圖案132中，第一交叉圖案131的第二鏤空段1312與第二交叉圖案132的第二鏤空段1322是實質相同的，此處所謂的”實質相同”係指第二鏤空段1312、1322兩者的寬度、曲率半徑、曲率中心(即所述鏤空段的曲率圓的圓心)相對於該鏤空段的位置(下文簡稱曲率中心相對位置)等等都是相同或相似的，而曲率中心相對於該鏤空段的位置可從圖3所示的空間來說明，但不以此為限，如圖3，第一交叉圖案131的第二鏤空段1312的曲率中心是位於第二鏤空段1312的左側，也就是說，第一交叉圖案131的第二鏤空段1312是類似反C型的開口向左的弧線；同樣的，第二交叉圖案132的第二鏤空段1322的曲率中心也是位於第二鏤空段1322的左側，故同樣為類似反C型的開口向左的弧線。據此，本實施例至少藉由鏤空段的寬度、曲率半徑、曲率中心相對於該鏤空段的位置定義出：相鄰的交叉圖案中，沿Y軸延伸的第二鏤空段1312、1322是實質相同的。In the pattern design of the present invention, in adjacent cross patterns, one of the two intersecting hollow segments is substantially the same, while the other is substantially different. Please refer to FIG3 , in the adjacent first cross pattern 131 and second cross pattern 132, the second hollow segment 1312 of the first cross pattern 131 and the second hollow segment 1322 of the second cross pattern 132 are substantially the same, and the so-called "substantially the same" here means that the width, radius of curvature, position of the center of curvature (i.e., the center of the curvature circle of the hollow segment) relative to the hollow segment (hereinafter referred to as the relative position of the center of curvature), etc. of the second hollow segments 1312 and 1322 are the same or similar, and the relative position of the center of curvature is the same as or similar to the width, radius of curvature, and position of the center of curvature (i.e., the center of the curvature circle of the hollow segment) relative to the hollow segment. The position of the hollow section can be explained from the space shown in FIG. 3 , but it is not limited thereto. As shown in FIG. 3 , the center of curvature of the second hollow section 1312 of the first cross pattern 131 is located on the left side of the second hollow section 1312, that is, the second hollow section 1312 of the first cross pattern 131 is an arc similar to an inverted C-shaped opening to the left; similarly, the center of curvature of the second hollow section 1322 of the second cross pattern 132 is also located on the left side of the second hollow section 1322, so it is also an arc similar to an inverted C-shaped opening to the left. Accordingly, this embodiment is defined at least by the width, radius of curvature, and the position of the center of curvature of the hollow section relative to the hollow section: in adjacent cross patterns, the second hollow sections 1312 and 1322 extending along the Y axis are substantially the same.

而相鄰的第一交叉圖案131與第二交叉圖案132中，第一交叉圖案131的第一鏤空段1311與第二交叉圖案132的第一鏤空段1321是實質不相同的，此處所謂的”實質不相同”係指第一鏤空段1311、1321兩者的寬度、曲率半徑、曲率中心相對位置等等至少有一個條件不同，在本實施例中，第一鏤空段1311、1321的曲率中心相對位置是不同的，如圖3所示，第一交叉圖案131的第一鏤空段1311的曲率中心是位於其上方，也就是說，第一交叉圖案131的第一鏤空段1311是類似U型的開口向上的弧線；而第二交叉圖案132的第一鏤空段1321的曲率中心是位於其下方，也就是說，第二交叉圖案132的第一鏤空段1321是類似倒U型的開口向下的弧線。據此，本實施例至少藉由曲率中心相對於該鏤空段的位置不同來定義出：相鄰的交叉圖案中，沿X軸延伸的第一鏤空段1311、1321是實質不相同的。在另一實施例，可藉由鏤空段1311、1321兩者的寬度不同來達到前述的實質不相同；在另一實施例，可藉由鏤空段1311、1321兩者的曲率半徑不同來達到前述的實質不相同。又在另一實施例中，可選擇鏤空段1311、1321兩者的寬度不同和曲率中心相對位置不同來達到前述的實質不相同。In the adjacent first cross pattern 131 and the second cross pattern 132, the first hollow segment 1311 of the first cross pattern 131 and the first hollow segment 1321 of the second cross pattern 132 are substantially different. The so-called "substantially different" here means that at least one of the conditions of the width, radius of curvature, relative position of the center of curvature, etc. of the first hollow segments 1311 and 1321 is different. In this embodiment, the curvature of the first hollow segments 1311 and 1321 is The relative positions of the centers of curvature of the first hollow segment 1311 of the first cross pattern 131 are different. As shown in FIG3 , the center of curvature of the first hollow segment 1311 of the first cross pattern 131 is located above it, that is, the first hollow segment 1311 of the first cross pattern 131 is an arc similar to a U-shaped opening upward; and the center of curvature of the first hollow segment 1321 of the second cross pattern 132 is located below it, that is, the first hollow segment 1321 of the second cross pattern 132 is an arc similar to an inverted U-shaped opening downward. Accordingly, this embodiment is defined at least by the different positions of the center of curvature relative to the hollow segment: in adjacent cross patterns, the first hollow segments 1311 and 1321 extending along the X-axis are substantially different. In another embodiment, the aforementioned substantial difference can be achieved by different widths of the hollow sections 1311 and 1321; in another embodiment, the aforementioned substantial difference can be achieved by different curvature radii of the hollow sections 1311 and 1321. In another embodiment, the aforementioned substantial difference can be achieved by different widths of the hollow sections 1311 and 1321 and different relative positions of the curvature centers.

再舉相鄰的第二交叉圖案132及第四交叉圖案134為例。如圖3，第一鏤空段1321、1341為實質相同，而第二鏤空段1322、1342是實質不相同的。根據前文的說明，第一鏤空段1321、1341兩者的寬度、曲率半徑、曲率中心相對位置等等都是相同或相似的，例如兩者均為類似倒U型的開口向下弧線(即曲率中心是位於該鏤空段的下方)；而第二鏤空段1322、1342至少具有曲率中心相對位置不同的差異，故兩者實質不同，更具體的說，第二鏤空段1322是類似反C型的開口向左的弧線(即曲率中心是位於該鏤空段的左側)，而第二鏤空段1342是類似C型的開口向右的弧線(即曲率中心是位於該鏤空段的右側)。Take the adjacent second cross pattern 132 and fourth cross pattern 134 as an example. As shown in FIG3 , the first hollow sections 1321 and 1341 are substantially the same, while the second hollow sections 1322 and 1342 are substantially different. According to the previous description, the width, radius of curvature, relative position of the center of curvature, etc. of the first hollow sections 1321 and 1341 are the same or similar. For example, both are downward arcs similar to an inverted U-shape opening (that is, the center of curvature is located below the hollow section); and the second hollow sections 1322 and 1342 have at least a difference in the relative position of the center of curvature, so the two are essentially different. More specifically, the second hollow section 1322 is an arc similar to an inverted C-shape opening to the left (that is, the center of curvature is located on the left side of the hollow section), and the second hollow section 1342 is an arc similar to a C-shape opening to the right (that is, the center of curvature is located on the right side of the hollow section).

因此，本發明利用相鄰的交叉圖案中，兩個相交的鏤空段的其中之一實質相同，而其中另一則實質不相同來減少或避免相同的重複性圖案所造成的光學干擾，而本發明交叉圖案的設置，可以降低圖1中的非蝕刻區(如第一軸向與第二軸向觸控電極121,124)與蝕刻區的光學特性差異，以減少或避免前述的蝕刻痕可視性的問題。Therefore, the present invention utilizes the fact that one of the two intersecting hollow segments in adjacent cross patterns is substantially the same, while the other is substantially different to reduce or avoid optical interference caused by the same repetitive pattern. The setting of the cross pattern of the present invention can reduce the difference in optical properties between the non-etched area (such as the first axial and second axial touch electrodes 121, 124) and the etched area in Figure 1, so as to reduce or avoid the aforementioned problem of visibility of the etching marks.

請參閱圖4A-4B，圖4A-4B為本發明交叉圖案之設計步驟，其至少包含下列步驟：Please refer to FIG. 4A-4B , which are the design steps of the cross pattern of the present invention, which at least include the following steps:

第一設置步驟S1，設置在Y軸方向上間隔排列的第一波浪圖案2311，第一波浪圖案2311沿第一方向X延伸，其大致為多個波峰與波谷相連接。在本具體實施例中，波峰與波谷實質為相同曲率半徑(例如曲率半徑R2)的圓弧相接，且波峰與波谷相接於反折點R，相鄰的第一波浪圖案2311之間距離為第一間距d1。具體而言，曲率半徑R2大於0mm且小於等於0.5mm，第一間距d1介於150μm - 300μm之間。值得說明的是，波浪圖案2311、2312實質具有一寬度(例如介於5μm - 20μm之間)，但為求圖示的簡潔，圖4A-4B中並未繪製出波浪圖案2311、2312的寬度，僅以單線表示。值得說明的是，由於此步驟中的曲率半徑R2即為圖3中的鏤空段1311、1321等的曲率半徑，故需詳加說明，由於在數學上曲率半徑為零，表示一個點(並非線段)，故此處須界定曲率半徑R2大於0mm；另外，本發明實施例原則上只要鏤空段1311、1321的曲率半徑不是無限大即可，但若過大的曲率半徑(例如接近無限大)，鏤空段1311、1321在實際產品上(尤其對人眼而言)就可能會近似於直線，故本發明實施例認為在小尺寸產品(例如手機等)，鏤空段1311、1321等曲率半徑R2優選小於等於約0.5mm或小於等於約1mm；而在中大尺寸產品(例如平板電腦、筆記型電腦等)， 鏤空段1311、1321等曲率半徑R2優選小於等於約5mm或小於等於約10mm；而在大、超大尺寸產品(例如電視、教育白板等) ，鏤空段1311、1321等曲率半徑R2優選小於等於約50mm或小於等於約100mm。換言之，隨著電子裝置的尺寸變大，鏤空段1311、1321等的曲率半徑就可以相應變大，而不會被人眼視為直線或近似於直線。The first setting step S1 sets the first wave pattern 2311 arranged at intervals in the Y-axis direction. The first wave pattern 2311 extends along the first direction X, and is generally a plurality of wave crests connected to wave troughs. In this specific embodiment, the wave crests and wave troughs are substantially connected by arcs of the same curvature radius (e.g., curvature radius R2), and the wave crests and wave troughs are connected at the inflection point R. The distance between adjacent first wave patterns 2311 is the first spacing d1. Specifically, the curvature radius R2 is greater than 0 mm and less than or equal to 0.5 mm, and the first spacing d1 is between 150 μm and 300 μm. It is worth noting that the wave patterns 2311 and 2312 actually have a width (e.g., between 5μm and 20μm), but for the sake of simplicity, the width of the wave patterns 2311 and 2312 is not drawn in FIG. 4A-4B, and is only represented by a single line. It is worth noting that since the radius of curvature R2 in this step is the radius of curvature of the hollow segments 1311, 1321, etc. in FIG. 3, it is necessary to explain it in detail. Since the radius of curvature is zero in mathematics, it represents a point (not a line segment), so the radius of curvature R2 must be defined as greater than 0mm here; in addition, in principle, the embodiment of the present invention only needs the radius of curvature of the hollow segments 1311 and 1321 to be not infinite, but if it is too large, The radius of curvature (for example, close to infinity), the hollow sections 1311, 1321 may be close to straight lines in actual products (especially to the human eye). Therefore, the embodiment of the present invention believes that in small-sized products (such as mobile phones, etc.), the radius of curvature R2 of the hollow sections 1311, 1321, etc. is preferably less than or equal to about 0.5 mm or less than or equal to about 1 mm; and in medium and large-sized products (such as tablet computers, laptops, etc.), the radius of curvature R2 of the hollow sections 1311, 1321, etc. is preferably less than or equal to about 5 mm or less than or equal to about 10 mm; and in large and extra-large-sized products (such as televisions, educational whiteboards, etc.), the radius of curvature R2 of the hollow sections 1311, 1321, etc. is preferably less than or equal to about 50 mm or less than or equal to about 100 mm. In other words, as the size of the electronic device increases, the radius of curvature of the hollow sections 1311, 1321, etc. can be correspondingly increased, and will not be viewed as a straight line or a line close to a straight line by the human eye.

第二設置步驟S2，設置在X軸方向上間隔排列的第二波浪圖案2312，每一第二波浪圖案2312沿第二方向Y延伸，其同於第一波浪圖案2311而大致為多個具有實質相同曲率半徑(例如曲率半徑R1，可參考圖2)的波峰與波谷相連接，且波峰與波谷相接於反折點，且相鄰的第二波浪圖案2312之間距離為第二間距d2。在此步驟中，第二波浪圖案2312會與第一波浪圖案2311形成多個交叉點。第二波浪圖案2312較佳會位於第一波浪圖案2311的波谷或波峰位置，例如圖4A的S2步驟中，圖面最左側的第二波浪圖案2312會位於第一波浪圖案2311的波峰，而相鄰於圖面最左側第二波浪圖案2312的第二波浪圖案2312則位於第一波浪圖案2311的波谷，但不以此為限。具體而言，曲率半徑R1大於0mm且小於0.5mm，第二間距d2介於150μm - 300μm之間。而除了本文有提及第一波浪圖案2311與第二波浪圖案2312的相異處，否則兩者在圖案的設計上的原則是大致相同的。此處曲率半徑R1的說明可參考前段內容。The second setting step S2 is to set second wave patterns 2312 arranged at intervals in the X-axis direction, each second wave pattern 2312 extends along the second direction Y, and is similar to the first wave pattern 2311 and is roughly a plurality of crests and troughs having substantially the same curvature radius (e.g., curvature radius R1, see FIG. 2 ) connected, and the crests and troughs are connected at the inflection point, and the distance between adjacent second wave patterns 2312 is a second spacing d2. In this step, the second wave pattern 2312 will form a plurality of intersections with the first wave pattern 2311. The second wave pattern 2312 is preferably located at the trough or crest of the first wave pattern 2311. For example, in step S2 of FIG. 4A , the second wave pattern 2312 on the far left of the drawing is located at the crest of the first wave pattern 2311, and the second wave pattern 2312 adjacent to the second wave pattern 2312 on the far left of the drawing is located at the trough of the first wave pattern 2311, but not limited thereto. Specifically, the radius of curvature R1 is greater than 0 mm and less than 0.5 mm, and the second spacing d2 is between 150 μm and 300 μm. In addition to the differences between the first wave pattern 2311 and the second wave pattern 2312 mentioned in this article, the principles of the design of the two patterns are roughly the same. The description of the radius of curvature R1 here can refer to the previous content.

第一裁切區定義步驟S3，設置虛擬第二波浪圖案2312'在每兩相鄰的第二波浪圖案2312的中間位置(也就是前述反折點R的位置)，也就是說在第一方向X上，虛擬第二波浪圖案2312'的中軸位置與圖面最左側第二波浪圖案2312之間的距離L1為第二間距d2的一半(即0.5ⅹd2)，而虛擬第二波浪圖案2312'與第二波浪圖案2312的圖案大致相同，但虛擬第二波浪圖案2312'的寬度a1比第二波浪圖案2312為大，而虛擬第二波浪圖案2312'與第一波浪圖案2311的交叉點就定義出裁切點C1、C2，而裁切點C1、C2之間就形成第一裁切區2313。藉由第一裁切區2313將第一波浪圖案2311形成一段一段的實質上沿X軸延伸的鏤空段(例如圖3的鏤空段1311、1321、1331等等…)，鏤空段1311、1321是由同一個第一波浪圖案2311裁切而成，故具有大致相同的半徑，兩者的曲率半徑也大致相同(由於第一波浪圖案2311的波峰與波谷具有大致相同的曲率半徑)，藉此達成前文所述鏤空段1311、1321具有大致相同的寬度、曲率半徑，但曲率中心相對位置不同的規則。虛擬第二波浪圖案2312'的寬度a1約介於50μm - 200μm之間，也就是說第一波浪圖案2311在X方向上被截斷的寬度(即第一裁切區2313的寬度)約介於50μm - 200μm之間。值得說明的是，由於第一波浪圖案2311上相鄰波峰與波谷之間的反折點R恰好落在第一裁切區2313而被裁切，故留下的線段就會有大致相同的曲率半徑。在另一實施態樣中，虛擬第二波浪圖案2312'的中軸位置不一定位於第二間距d2的中央位置，例如位於第二間距d2的40%的位置處，也就是說虛擬第二波浪圖案2312'的中軸位置與左側的第二波浪圖案2312距離為0.4ⅹd2。而此圖也繪製出裁切點C1’、C2’，其具體的方法可參照前文，就不再重複說明。In the first cropping area definition step S3, the virtual second wave pattern 2312' is set at the middle position between every two adjacent second wave patterns 2312 (that is, the position of the aforementioned inflection point R). That is to say, in the first direction X, the distance L1 between the middle axis position of the virtual second wave pattern 2312' and the leftmost second wave pattern 2312 of the drawing is half of the second spacing d2 (that is, 0.5 x d2 ), and the virtual second wave pattern 2312' is substantially the same as the second wave pattern 2312, but the width a1 of the virtual second wave pattern 2312' is larger than that of the second wave pattern 2312, and the intersection of the virtual second wave pattern 2312' and the first wave pattern 2311 defines the cutting points C1 and C2, and the first cutting area 2313 is formed between the cutting points C1 and C2. The first wave pattern 2311 is formed into sections of hollow segments substantially extending along the X-axis by the first cutting area 2313 (for example, the hollow segments 1311, 1321, 1331, etc. in FIG. 3 ). The hollow segments 1311 and 1321 are cut from the same first wave pattern 2311, and therefore have approximately the same radius, and the curvature radii of the two are also approximately the same (since the crests and troughs of the first wave pattern 2311 have approximately the same curvature radii), thereby achieving the aforementioned rule that the hollow segments 1311 and 1321 have approximately the same width and curvature radius, but different relative positions of the centers of curvature. The width a1 of the virtual second wave pattern 2312' is approximately between 50μm and 200μm, which means that the width of the first wave pattern 2311 cut off in the X direction (i.e., the width of the first cutting area 2313) is approximately between 50μm and 200μm. It is worth noting that since the inflection point R between the adjacent crests and troughs on the first wave pattern 2311 happens to fall in the first cutting area 2313 and is cut, the remaining line segments will have approximately the same curvature radius. In another embodiment, the center axis position of the virtual second wave pattern 2312' is not necessarily located at the center position of the second spacing d2, for example, it is located at 40% of the second spacing d2, that is, the center axis position of the virtual second wave pattern 2312' is 0.4 x d2 away from the left second wave pattern 2312. This figure also draws the cutting points C1' and C2', and the specific method can be referred to the previous text, so it will not be repeated.

第二裁切區定義步驟S4，類同於步驟S3。具體而言，設置虛擬第一波浪圖案2311'在每兩相鄰的第一波浪圖案2311的中間位置(也就是前述反折點R的位置)，也就是說在第二方向Y上，虛擬第一波浪圖案2311'與第一波浪圖案2311之間的距離L2為第一間距d1的一半(即0.5ⅹd1)，而虛擬第一波浪圖案2311'與第一波浪圖案2311的圖案大致相同，但虛擬第一波浪圖案2311'的寬度比第一波浪圖案2311為大，虛擬第一波浪圖案2311'與第二波浪圖案2312的交叉點就定義出裁切點C3、C4，而裁切點C3、C4之間就形成第二裁切區2314。藉由第二裁切區2314將第二波浪圖案2312形成一段一段的實質上沿Y軸延伸的鏤空段(例如圖3的鏤空段1312、1322、1332等等…) ，鏤空段1312、1322是由相同圖案的第二波浪圖案2312裁切而成，故具有大致相同的半徑，兩者的曲率半徑也大致相同(由於第二波浪圖案2312的波峰與波谷具有大致相同的曲率半徑)，藉此達成前文所述鏤空段1312、1322具有大致相同的寬度、曲率半徑，且曲率中心相對位置也相同的規則。虛擬第一波浪圖案2311'的寬度a2約介於50μm - 200μm之間，也就是說第二波浪圖案2312在Y方向上被截斷的寬度(即第二裁切區2314的寬度)約介於50μm - 200μm之間。在另一實施態樣中，虛擬第一波浪圖案2311'的中軸位置不一定位於第一間距d1的中央位置，可參考前文。The second cutting area definition step S4 is similar to step S3. Specifically, the virtual first wave pattern 2311' is set at the middle position of every two adjacent first wave patterns 2311 (that is, the position of the aforementioned inflection point R), that is, in the second direction Y, the distance L2 between the virtual first wave pattern 2311' and the first wave pattern 2311 is half of the first spacing d1 (that is, 0.5ⅹd1), and the virtual first wave pattern 2311' and the first wave pattern 2311 are roughly the same, but the width of the virtual first wave pattern 2311' is larger than that of the first wave pattern 2311, and the intersection of the virtual first wave pattern 2311' and the second wave pattern 2312 defines the cutting points C3 and C4, and the second cutting area 2314 is formed between the cutting points C3 and C4. The second wave pattern 2312 is formed into sections of hollow segments substantially extending along the Y-axis by the second cutting area 2314 (for example, the hollow segments 1312, 1322, 1332, etc. in FIG. 3). The hollow segments 1312 and 1322 are cut from the second wave pattern 2312 of the same pattern, and therefore have approximately the same radius, and the curvature radii of the two are also approximately the same (because the crests and troughs of the second wave pattern 2312 have approximately the same curvature radii), thereby achieving the aforementioned rule that the hollow segments 1312 and 1322 have approximately the same width, curvature radius, and the relative positions of the centers of curvature are also the same. The width a2 of the virtual first wave pattern 2311' is approximately between 50μm and 200μm, that is, the width of the second wave pattern 2312 cut off in the Y direction (i.e., the width of the second cutting area 2314) is approximately between 50μm and 200μm. In another embodiment, the center axis position of the virtual first wave pattern 2311' is not necessarily located at the center position of the first spacing d1, which can be referred to above.

裁切步驟S5，根據第一裁切區2313與第二裁切區2314將兩軸向的波浪圖案裁切，就可以得到本實施例的交叉圖案。可將裁切步驟S5所製作的圖案與圖2相比，兩圖中的鏤空圖案組130B是相同的，不同之處僅是步驟S5用單線繪製。也就是說，根據上述S1~S5的步驟，本實施例得到一種由兩個鏤空段相交所組成交叉圖案，且相交的兩鏤空段的曲率半徑均不為無窮大(即非直線)，且在相鄰的交叉圖案中，所述兩個鏤空段的其中之一會實質相同，而其中另一則實質不相同，而後續即可利用圖案化步驟(例如黃光微影、蝕刻等)將本實施例的圖案成形於電極上，藉以調整透明電極層12的非蝕刻區(即電極) 與蝕刻區(即電極與電極之間的區域)的光學特性差異，降低前述的使用者可視的問題。In the cutting step S5, the wave patterns in both axes are cut according to the first cutting area 2313 and the second cutting area 2314, so as to obtain the cross pattern of the present embodiment. The pattern produced in the cutting step S5 can be compared with FIG. 2 , and the hollow pattern set 130B in the two figures is the same, and the only difference is that the step S5 is drawn with a single line. That is to say, according to the above steps S1 to S5, the present embodiment obtains a cross pattern composed of two intersecting hollow segments, and the curvature radius of the two intersecting hollow segments is not infinite (i.e., not a straight line), and in adjacent cross patterns, one of the two hollow segments is substantially the same, while the other is substantially different. Subsequently, a patterning step (such as photolithography, etching, etc.) can be used to form the pattern of the present embodiment on the electrode, so as to adjust the difference in optical properties between the non-etched area (i.e., the electrode) and the etched area (i.e., the area between the electrodes) of the transparent electrode layer 12, thereby reducing the aforementioned user visibility problem.

請參閱圖5並配合圖1，圖5為根據本發明第一實施例之電極結構的俯視圖。如圖5所示，根據本發明實施例的觸控電極，例如第一軸向觸控電極121上形成有鏤空圖案13，其包括多個鏤空圖案組，如鏤空圖案組130A、130C，其中，第一軸向觸控電極121為金屬氧化物層與奈米銀線層組成的複合式透明導電材料所製成。具體而言，本發明實施例先在基板11(由達邁公司所提供的厚度13um的CPI基板)設置金屬氧化物層(由SOLAR APPLIED MATERIALS TECHOLOGY所提供的IXO透明導電膜)，並利用黃光、蝕刻等方法將蝕刻線31與本實施例的鏤空圖案13製作於其上以形成具有特定圖案的電極(例如圖5所示的第一軸向觸控電極121)，之後再將奈米銀線層(由Cambrios提供的奈米銀線漿料與高分子塗布物)覆蓋於前述圖案化後的IXO透明導電膜以形成觸控電極。Please refer to FIG. 5 and FIG. 1 , which is a top view of the electrode structure according to the first embodiment of the present invention. As shown in FIG. 5 , a touch electrode according to the embodiment of the present invention, such as a first axial touch electrode 121, is formed with a hollow pattern 13, which includes a plurality of hollow pattern groups, such as hollow pattern groups 130A and 130C, wherein the first axial touch electrode 121 is made of a composite transparent conductive material composed of a metal oxide layer and a nano silver wire layer. Specifically, the embodiment of the present invention first sets a metal oxide layer (IXO transparent conductive film provided by SOLAR APPLIED MATERIALS TECHOLOGY) on the substrate 11 (CPI substrate with a thickness of 13um provided by Damian), and uses yellow light, etching and other methods to make etching lines 31 and the hollow pattern 13 of this embodiment thereon to form an electrode with a specific pattern (such as the first axial touch electrode 121 shown in Figure 5), and then covers the above-mentioned patterned IXO transparent conductive film with a nanosilver wire layer (nanosilver wire slurry and polymer coating provided by Cambrios) to form a touch electrode.

另外請參閱圖5並配合圖2及圖3，本實施例中，鏤空圖案組中實質沿Y軸延伸的鏤空段，例如第二鏤空段1312、1322、1332、1342的寬度均約為10um，而其曲率半徑R1均約為0.41mm，且沿Y軸相鄰的交叉圖案，如第一交叉圖案131與第三交叉圖案133的之間的距離為約100um(此寬度即為前述裁切區的寬度a2)；實質沿X軸延伸的鏤空段，例如第一鏤空段1311、1321、1331、1341的寬度均約為10um，而其曲率半徑R2均約為0.42mm，且沿X軸相鄰的交叉圖案，如第一交叉圖案131與第二交叉圖案132的之間的間距d為約100um(此寬度即為前述裁切區的寬度a1)。關於本實施例交叉圖案的相關說明可參照前文，在此不再贅述。In addition, please refer to FIG. 5 in conjunction with FIG. 2 and FIG. 3. In this embodiment, the width of the hollow segments substantially extending along the Y axis in the hollow pattern group, such as the second hollow segments 1312, 1322, 1332, and 1342, is about 10 um, and the radius of curvature R1 thereof is about 0.41 mm, and the distance between the adjacent cross patterns along the Y axis, such as the first cross pattern 131 and the third cross pattern 133, is about 100 um (this width is about 100 um). The width of the hollow segments substantially extending along the X-axis, such as the first hollow segments 1311, 1321, 1331, and 1341, is about 10 um, and the radius of curvature R2 thereof is about 0.42 mm, and the spacing d between the adjacent cross patterns along the X-axis, such as the first cross pattern 131 and the second cross pattern 132, is about 100 um (this width is the width a1 of the cutting area). The relevant description of the cross pattern of this embodiment can be referred to the above text, and will not be repeated here.

藉此，本實施例將上述觸控電極在光學顯微鏡下觀察，並不會產生光學干涉現象，例如摩爾紋，故可滿足光學顯示的要求。Thus, when the touch electrode is observed under an optical microscope, optical interference phenomena such as moiré will not occur in this embodiment, thus meeting the requirements of optical display.

另外，本發明實施例在D65光源下的CIELAB色彩空間(CIELAB color space)表現可以說明電極與蝕刻區的光學特性可趨近一致，使人眼不易觀察到蝕刻痕。CIELAB色彩空間包含有 L*、a*、b*值，在本發明實施例以D65光源進行測試，其指色溫6500K且入射角10度的人工日光源，「L*」代表感知的亮度、「a*」和「b*」代表人類視覺的四種獨特顏色：紅色、綠色、藍色和黃色。由於CIELAB色彩空間的運算為本技術領域的通常知識，故在此不再贅述。In addition, the CIELAB color space performance of the embodiment of the present invention under D65 light source can illustrate that the optical characteristics of the electrode and the etched area can be close to each other, making it difficult for the human eye to observe the etch marks. The CIELAB color space includes L*, a*, and b* values. In the embodiment of the present invention, the D65 light source is used for testing, which refers to an artificial daylight source with a color temperature of 6500K and an incident angle of 10 degrees. "L*" represents the perceived brightness, and "a*" and "b*" represent the four unique colors of human vision: red, green, blue, and yellow. Since the operation of the CIELAB color space is common knowledge in the art, it will not be elaborated here.

根據本發明實施例，其在不具有鏤空圖案時的穿透率為84.3%且在D65光源下的b*值為0.83，並且在鏤空圖案13與透明電極層12之面積比例為2%時的穿透率為84.7%且在D65光源下的b*值為0.8。而蝕刻區的光學特性基本上可視為基板的特性，故以前述13um的CPI基板而言，其穿透率為90.8%且在b*值為0.71，顯見本發明實施例的鏤空圖案可以降低電極與蝕刻區的光學特性可趨近一致，使人眼不易觀察到蝕刻痕。據此，本實施例可以達到消除蝕刻痕(對人眼而言)，又不會產生光學干涉的副作用。According to the embodiment of the present invention, when there is no hollow pattern, the transmittance is 84.3% and the b* value under D65 light source is 0.83, and when the area ratio of the hollow pattern 13 to the transparent electrode layer 12 is 2%, the transmittance is 84.7% and the b* value under D65 light source is 0.8. The optical properties of the etched area can basically be regarded as the properties of the substrate. Therefore, for the aforementioned 13um CPI substrate, its transmittance is 90.8% and the b* value is 0.71. It is obvious that the hollow pattern of the embodiment of the present invention can reduce the optical properties of the electrode and the etched area to be close to the same, making it difficult for the human eye to observe the etch marks. Accordingly, this embodiment can eliminate the etch marks (for the human eye) without producing the side effect of optical interference.

另外，本發明第二實施例在基板11(由達邁公司所提供的厚度13um的CPI基板)設置奈米銀線層(由Cambrios提供的奈米銀線漿料與高分子塗布物)，並利用黃光、蝕刻等方法將蝕刻線31與前述第一實施例的鏤空圖案13製作於其上以形成具有特定圖案的電極(例如圖5所示的第一軸向觸控電極121)，以形成觸控電極。根據本發明之電極結構100在形成有鏤空圖案和不具有鏤空圖案之穿透率以及b*值，當鏤空圖案13佔透明電極層12的面積比例愈高時，電極結構100之穿透率愈高且b*值愈低，就透明度以及消影效果而言，本發明之電極結構100由於具有鏤空圖案13，在可見光範圍內具有極佳的透明度且具備消影的效果(如表1)且不會產生光學干涉。另一方面，本發明實施例認為鏤空圖案13之面積佔透明電極層12的面積之比例不是越高越好，雖然鏤空面積之比例越高可以有較高的穿透率，但實際上，當鏤空圖案13之面積佔透明電極層12的面積之比例大於5%後，人眼可以觀察到的變化甚微，也就是說，鏤空面積超過透明電極層12的面積之比例大於5%對使用者來說意義不大，反而有可能影響電極結構100之電特性，因為本發明實施例採用的奈米銀線材料是靠銀線與銀線之間的連接達到導電效果，當挖空的比例過高(例如超過5%)，可能導致銀線與銀線之間的連接點數量不足，使得阻抗過大，不利於觸控感應，如本實施例中鏤空面積占比為7%時，觸控電極的阻抗值就會超出某些特定供應商所提供的控制晶片的驅動能力。從而，本發明之電極結構100上的鏤空圖案13之面積佔透明電極層12的面積之比例可為大於0%，小於7%；較佳為大於0%，小於等於5%；更佳為2%~5%，在此範圍內，除了達到前述蝕刻痕不可視，更可以兼顧電極結構100具有良好導電度和光學性質的平衡。再者，前述實施例的電極結構100可以應用在可撓、可彎折、可拉伸(即可變形的)的產品上，當產品處於變形狀態下(例如拉伸狀態)，鏤空圖案13的占比面積過大時，也可能導致銀線與銀線之間的連接點數量不足而造成阻抗變大的問題，故本發明實施例選擇上述佔比面積。In addition, the second embodiment of the present invention sets a nanosilver wire layer (nanosilver wire slurry and polymer coating provided by Cambrios) on the substrate 11 (CPI substrate with a thickness of 13um provided by Damian Corporation), and uses yellow light, etching and other methods to make etching lines 31 and the hollow pattern 13 of the first embodiment thereon to form an electrode with a specific pattern (for example, the first axial touch electrode 121 shown in Figure 5) to form a touch electrode. According to the transmittance and b* value of the electrode structure 100 of the present invention when a hollow pattern is formed and when a hollow pattern is not formed, when the hollow pattern 13 occupies a higher area ratio of the transparent electrode layer 12, the transmittance of the electrode structure 100 is higher and the b* value is lower. In terms of transparency and shadow elimination effect, the electrode structure 100 of the present invention has excellent transparency and shadow elimination effect in the visible light range (as shown in Table 1) and does not produce optical interference due to the hollow pattern 13. On the other hand, the present invention believes that the ratio of the area of the hollow pattern 13 to the area of the transparent electrode layer 12 is not as high as possible. Although the higher the ratio of the hollow area, the higher the transmittance, in reality, when the ratio of the area of the hollow pattern 13 to the area of the transparent electrode layer 12 is greater than 5%, the change that can be observed by the human eye is very small. In other words, the ratio of the hollow area exceeding the area of the transparent electrode layer 12 by more than 5% is of little significance to the user, but has the opposite effect. The electrical properties of the electrode structure 100 may be affected because the nano silver wire material used in the embodiment of the present invention achieves a conductive effect by connecting the silver wires to each other. When the hollowing ratio is too high (for example, more than 5%), the number of connection points between the silver wires may be insufficient, resulting in excessive impedance, which is not conducive to touch sensing. For example, when the hollowing area accounts for 7% in this embodiment, the impedance value of the touch electrode will exceed the driving capability of the control chip provided by certain specific suppliers. Therefore, the ratio of the area of the hollow pattern 13 on the electrode structure 100 of the present invention to the area of the transparent electrode layer 12 can be greater than 0% and less than 7%; preferably greater than 0% and less than or equal to 5%; and more preferably 2% to 5%. Within this range, in addition to achieving the aforementioned invisible etching marks, the electrode structure 100 can also have a good balance between conductivity and optical properties. Furthermore, the electrode structure 100 of the aforementioned embodiment can be applied to flexible, bendable, and stretchable (i.e., deformable) products. When the product is in a deformed state (e.g., stretched state), if the hollow pattern 13 occupies too large an area, it may also lead to insufficient number of connection points between the silver wires, resulting in increased impedance. Therefore, the embodiment of the present invention selects the above-mentioned area.

表1 　 b* T(%) 無鏤空(0%) 0.83 87.8 鏤空占比1% 0.81 87.97 鏤空占比2% 0.80 88.02 鏤空占比3% 0.80 88.07 鏤空占比5% 0.79 88.2 鏤空占比7% 0.78 88.3 Table 1 b* T(%) No hollowing (0%) 0.83 87.8 Hollowing accounts for 1% 0.81 87.97 Hollowing accounts for 2% 0.80 88.02 Hollowing accounts for 3% 0.80 88.07 Hollowing accounts for 5% 0.79 88.2 Hollowing accounts for 7% 0.78 88.3

綜合上述兩個實施例，本發明實施例藉由非直線的鏤空段所組成的交叉圖案，並提出相鄰的該等交叉圖案中，該第一鏤空段以及該第二鏤空段的其中之一實質相同，而相鄰的該等交叉圖案中，該第一鏤空段以及該第二鏤空段的其中另一實質不相同的避免光學干涉的圖案設計，達到消除蝕刻痕(對人眼而言)，且不產生光學干涉的效果；再者，本發明實施例更提出鏤空圖案13之面積佔奈米銀線透明電極層12的面積之比例控制，同時達到光學及電性的要求。然而，本領域技術人員可以理解透過調整鏤空圖案13之間的距離、調整鏤空段的寬度、第一鏤空段1311以及第二鏤空段1312的曲率半徑、或者調整鏤空圖案13之交叉圖案131的數量等，以控制鏤空圖案13之面積佔透明電極層12的面積之比例，在此不予贅述。Combining the above two embodiments, the embodiment of the present invention adopts a cross pattern composed of non-straight hollow segments, and proposes a pattern design to avoid optical interference in which one of the first hollow segment and the second hollow segment in the adjacent cross patterns is substantially the same, while the other of the first hollow segment and the second hollow segment in the adjacent cross patterns is substantially different, thereby achieving the effect of eliminating etching marks (for the human eye) and not generating optical interference; furthermore, the embodiment of the present invention further proposes controlling the ratio of the area of the hollow pattern 13 to the area of the nanosilver wire transparent electrode layer 12, thereby achieving both optical and electrical requirements. However, those skilled in the art can understand that the ratio of the area of the hollow pattern 13 to the area of the transparent electrode layer 12 can be controlled by adjusting the distance between the hollow patterns 13, adjusting the width of the hollow segment, the radius of curvature of the first hollow segment 1311 and the second hollow segment 1312, or adjusting the number of cross patterns 131 of the hollow pattern 13, which will not be elaborated here.

請參閱圖6，其為根據本發明第三實施例之電極結構的俯視圖。如圖6所示，其與圖5實施例的差異至少在於：透明電極層12形成有蝕刻線31並包含有不提供電性功能的虛擬電極區32A，虛擬電極區32A至少形成在相鄰的電極之間。在本實施例中，虛擬電極區32A亦可以形成有鏤空圖案13A'，鏤空圖案13A'的圖案規則可參考前文的說明，但由於虛擬電極區32A不需考慮導電性，故鏤空圖案13A'佔虛擬電極區32A之面積比例可較佳為大於等於0%，小於等於15%；更佳為2%-12%之間；在本實施例中，鏤空圖案13之面積佔透明電極層12的面積之比例為4%，而鏤空圖案13A'佔虛擬電極區32A之面積比例為12%。可以理解的是，由於虛擬電極區32A屬於不提供電性功能的電極，故其鏤空的占比面積可以較透明電極層12的鏤空占比面積為高。鏤空圖案13A'可為前述實施例中鏤空圖案13A以等比例縮小的方式達成，例如以50%~30%的比例縮小。另外，鏤空圖案13A'與鏤空圖案13A的軸向可以相同或不同，以圖6而言，鏤空圖案13A'係以X軸旋轉45度為其交叉圖案的軸向。藉此，本發明第一實施例之電極結構100係藉由在虛擬電極區32A上形成有鏤空圖案13A'，以避免光學干涉，且進一步減少蝕刻區與虛擬電極區32A之間的蝕刻線31可視的問題。Please refer to FIG6, which is a top view of the electrode structure according to the third embodiment of the present invention. As shown in FIG6, the difference from the embodiment of FIG5 is at least that the transparent electrode layer 12 is formed with an etched line 31 and includes a dummy electrode region 32A that does not provide electrical function, and the dummy electrode region 32A is at least formed between adjacent electrodes. In the present embodiment, the virtual electrode region 32A may also be formed with a hollow pattern 13A'. The pattern rule of the hollow pattern 13A' may refer to the previous description. However, since the virtual electrode region 32A does not need to consider conductivity, the hollow pattern 13A' may preferably account for a ratio of greater than or equal to 0% and less than or equal to 15% of the area of the virtual electrode region 32A; more preferably, it may be between 2% and 12%. In the present embodiment, the area of the hollow pattern 13 accounts for 4% of the area of the transparent electrode layer 12, and the hollow pattern 13A' accounts for 12% of the area of the virtual electrode region 32A. It is understandable that, since the virtual electrode region 32A is an electrode that does not provide electrical functions, the hollow area of the virtual electrode region 32A can be higher than the hollow area of the transparent electrode layer 12. The hollow pattern 13A' can be obtained by scaling down the hollow pattern 13A in the aforementioned embodiment in equal proportion, for example, by scaling down by 50% to 30%. In addition, the axial directions of the hollow pattern 13A' and the hollow pattern 13A can be the same or different. For example, in FIG. 6 , the hollow pattern 13A' is rotated 45 degrees about the X axis as the axial direction of the cross pattern. Thus, the electrode structure 100 of the first embodiment of the present invention avoids optical interference by forming the hollow pattern 13A′ on the dummy electrode region 32A, and further reduces the visibility problem of the etched line 31 between the etched region and the dummy electrode region 32A.

在另一實施例中，請參閱圖7，其為根據本發明又一實施例之電極結構的俯視圖。交叉圖案可為類T形，其與前述實施例不同之處僅是兩軸向的鏤空段並不是全交叉，例如第二鏤空段1312與第一鏤空段1311的交點恰好是第二鏤空段1312的一末端。在另一實施例中，交叉圖案可為橫置的類T形(即圖7的圖案轉90度)。其餘內容可參考前文，於此不再贅述。在另一實施例中，第二鏤空段1312與第一鏤空段1311等可以是包含多個曲率半徑的線段，只要符合相鄰的交叉圖案中，一組對應的鏤空段實質相同，而另一組對應的鏤空段實質不相同的特徵即可。In another embodiment, please refer to FIG. 7, which is a top view of an electrode structure according to another embodiment of the present invention. The cross pattern may be a quasi-T shape, which is different from the aforementioned embodiment only in that the hollow sections in the two axes are not completely crossed, for example, the intersection of the second hollow section 1312 and the first hollow section 1311 is exactly one end of the second hollow section 1312. In another embodiment, the cross pattern may be a horizontal quasi-T shape (i.e., the pattern of FIG. 7 is rotated 90 degrees). The rest of the content can be referred to the above, and will not be repeated here. In another embodiment, the second hollow segment 1312 and the first hollow segment 1311 may be line segments including multiple curvature radii, as long as the characteristics of one set of corresponding hollow segments being substantially the same and another set of corresponding hollow segments being substantially different in adjacent cross patterns are met.

可以理解的是，使用者可視其需求，選擇不同的觸控感測結構作為透明電極層，包含是否設置虛擬電極區，觸控感測結構的材料亦可以根據使用者需求進行調整，並且本發明所屬技術領域中具有通常知識者能夠基於上述示例再作出各種變化和修飾，在此不再一一列舉。It is understandable that users can choose different touch sensing structures as transparent electrode layers according to their needs, including whether to set up virtual electrode areas. The materials of the touch sensing structures can also be adjusted according to user needs. In addition, those with ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications based on the above examples, which will not be listed one by one here.

最後，將本發明的技術特徵及其可達成之技術功效彙整如下：Finally, the technical features of the present invention and the technical effects that can be achieved are summarized as follows:

一、根據本發明之電極結構，其透明電極層具有鏤空圖案，其可以解決或降低蝕刻線可視的問題，又不會產生光學干涉的副作用。1. According to the electrode structure of the present invention, the transparent electrode layer has a hollow pattern, which can solve or reduce the problem of visible etching lines without generating the side effect of optical interference.

二、根據本發明的鏤空圖案可以確保奈米銀線電極結構具有導電度和光學特性的平衡，在不影響電性的情況下，可解決或降低蝕刻痕之可視性問題。Second, the hollow pattern of the present invention can ensure that the nanosilver wire electrode structure has a balance between conductivity and optical properties, and can solve or reduce the visibility problem of etching marks without affecting electrical properties.

以上藉由特定的具體實施例說明本發明之實施方式，所屬技術領域具有通常知識者可由本說明書所揭示之內容輕易地瞭解本發明之技術特徵、優點、以及功效。The above describes the implementation of the present invention by using specific embodiments. A person having ordinary knowledge in the relevant technical field can easily understand the technical features, advantages, and effects of the present invention from the contents disclosed in this specification.

以上所述僅為本發明之較佳實施例，並非用以限定本發明之範圍。凡其它未脫離本發明所揭示之精神下所完成的等效改變或修飾，均應包含在下述之申請專利範圍內。The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Any other equivalent changes or modifications that are completed without departing from the spirit disclosed by the present invention should be included in the scope of the following patent application.

100:電極結構 11:基板 12:透明電極層 121,124:觸控電極 122:絕緣層 123:架橋結構 13:鏤空圖案 13A,13A':鏤空圖案 130A,130C:第一鏤空圖案組 130B:第二鏤空圖案組 131:第一交叉圖案 1311,1321,1331,1341:第一鏤空段 1312,1322,1332,1342:第二鏤空段 132:第二交叉圖案 133:第三交叉圖案 134:第四交叉圖案 2311:第一波浪圖案 2311':虛擬第一波浪圖案 2312:第二波浪圖案 2312':虛擬第二波浪圖案 31:蝕刻線 32A:虛擬電極區 a1,a2:寬度 C1,C1’,C2,C2’:裁切點 d:間距 d1:第一間距 d2:第二間距 R:反折點 R1,R2:曲率半徑 S1:第一設置步驟 S2:第二設置步驟 S3:第一裁切區定義步驟 S4:第二裁切區定義步驟 S5:裁切步驟 X:第一方向 Y:第二方向 100: electrode structure 11: substrate 12: transparent electrode layer 121,124: touch electrode 122: insulating layer 123: bridge structure 13: hollow pattern 13A,13A': hollow pattern 130A,130C: first hollow pattern group 130B: second hollow pattern group 131: first cross pattern 1311,1321,1331,1341: first hollow segment 1312,1322,1332,1342: second hollow segment 132: second cross pattern 133: third cross pattern 134: fourth cross pattern 2311: first wave pattern 2311': Virtual first wave pattern 2312: Second wave pattern 2312': Virtual second wave pattern 31: Etching line 32A: Virtual electrode area a1, a2: Width C1, C1', C2, C2': Cutting point d: Spacing d1: First spacing d2: Second spacing R: Inflection point R1, R2: Curvature radius S1: First setup step S2: Second setup step S3: First cutting area definition step S4: Second cutting area definition step S5: Cutting step X: First direction Y: Second direction

圖1為根據本發明之電極結構例示性的示意圖 圖2為根據本發明之透明電極層的鏤空圖案的示意圖； 圖3為圖2中的鏤空圖案的放大示意圖； 圖4A-4B為說明本發明交叉圖案之設計步驟示意圖； 圖5為根據本發明第一實施例之電極結構的俯視圖； 圖6為根據本發明第二實施例之電極結構的俯視圖；以及 圖7為根據本發明又一實施例之電極結構的俯視圖。 FIG1 is a schematic diagram of an exemplary electrode structure according to the present invention. FIG2 is a schematic diagram of a hollow pattern of a transparent electrode layer according to the present invention; FIG3 is an enlarged schematic diagram of the hollow pattern in FIG2; FIG4A-4B are schematic diagrams illustrating the design steps of the cross pattern of the present invention; FIG5 is a top view of an electrode structure according to a first embodiment of the present invention; FIG6 is a top view of an electrode structure according to a second embodiment of the present invention; and FIG7 is a top view of an electrode structure according to another embodiment of the present invention.

13:鏤空圖案 13: Openwork pattern

130A:第一鏤空圖案組 130A: The first hollow pattern group

130B:第二鏤空圖案組 130B: The second hollow pattern group

131:第一交叉圖案 131: The first cross pattern

1311:第一鏤空段 1311: The first hollowing section

1312:第二鏤空段 1312: The second hollowing section

132:第二交叉圖案 132: Second cross pattern

d:間距 d: Spacing

R1,R2:曲率半徑 R1, R2: radius of curvature

X:第一方向 X: First direction

Y:第二方向 Y: Second direction

Claims (8)

一種具有鏤空圖案之電極結構，包括： 一基板；以及 一透明電極層，設置於該基板上，該透明電極層形成有該鏤空圖案； 其中，該鏤空圖案包含有複數交叉圖案，每一該等交叉圖案由一曲率不等於零的第一鏤空段以及一曲率不等於零的第二鏤空段組成，其中相鄰的該等交叉圖案中，該第一鏤空段以及該第二鏤空段的其中之一實質相同，而相鄰的該等交叉圖案中，該第一鏤空段以及該第二鏤空段的其中另一實質不相同。 An electrode structure with a hollow pattern, comprising: a substrate; and a transparent electrode layer disposed on the substrate, the transparent electrode layer forming the hollow pattern; wherein the hollow pattern comprises a plurality of cross patterns, each of the cross patterns being composed of a first hollow segment with a curvature not equal to zero and a second hollow segment with a curvature not equal to zero, wherein in the adjacent cross patterns, one of the first hollow segment and the second hollow segment is substantially the same, and in the adjacent cross patterns, the other of the first hollow segment and the second hollow segment is substantially different. 如請求項1所述之電極結構，其中，該第一鏤空段以及該第二鏤空段分別朝一第一方向以及一第二方向延伸，一第一交叉圖案與一第二交叉圖案沿該第一方向相鄰，該第一交叉圖案的該第二鏤空段與該第二交叉圖案的該第二鏤空段具有實質相同的寬度、曲率半徑及曲率中心相對位置；該第一交叉圖案的該第一鏤空段與該第二交叉圖案的該第一鏤空段具有實質相同的寬度及曲率半徑，該第一交叉圖案的該第一鏤空段與該第二交叉圖案的該第一鏤空段的曲率中心相對位置不同。An electrode structure as described in claim 1, wherein the first hollow segment and the second hollow segment extend in a first direction and a second direction respectively, a first cross pattern and a second cross pattern are adjacent to each other along the first direction, the second hollow segment of the first cross pattern and the second hollow segment of the second cross pattern have substantially the same width, radius of curvature and relative position of the center of curvature; the first hollow segment of the first cross pattern and the first hollow segment of the second cross pattern have substantially the same width and radius of curvature, and the first hollow segment of the first cross pattern and the first hollow segment of the second cross pattern have different relative positions of the centers of curvature. 如請求項2所述之電極結構，其中，該第一鏤空段以及該第二鏤空段分別朝一第一方向以及一第二方向延伸，該第一交叉圖案與一第三交叉圖案沿該第二方向相鄰，該第一交叉圖案的該第一鏤空段與該第三交叉圖案的該第一鏤空段具有實質相同的寬度、曲率半徑及曲率中心相對位置；該第一交叉圖案的該第二鏤空段與該第三交叉圖案的該第二鏤空段具有實質相同的寬度及曲率半徑，該第一交叉圖案的該第二鏤空段與該第三交叉圖案的該第二鏤空段的曲率中心相對位置不同。An electrode structure as described in claim 2, wherein the first hollow segment and the second hollow segment extend in a first direction and a second direction respectively, the first cross pattern and a third cross pattern are adjacent to each other along the second direction, the first hollow segment of the first cross pattern and the first hollow segment of the third cross pattern have substantially the same width, radius of curvature and relative position of the center of curvature; the second hollow segment of the first cross pattern and the second hollow segment of the third cross pattern have substantially the same width and radius of curvature, and the second hollow segment of the first cross pattern and the second hollow segment of the third cross pattern have different relative positions of the center of curvature. 如請求項1所述之電極結構，其中，該第一鏤空段的曲率半徑約為0.41mm，該第二鏤空段的曲率半徑約為0.42mm；該第一鏤空段與該第二鏤空段的寬度約為10um；相鄰的該等交叉圖案之間的間距約為100um。The electrode structure as described in claim 1, wherein the curvature radius of the first hollow section is approximately 0.41 mm, and the curvature radius of the second hollow section is approximately 0.42 mm; the width of the first hollow section and the second hollow section is approximately 10 um; and the spacing between adjacent cross patterns is approximately 100 um. 如請求項1所述之電極結構，其中，該透明電極層至少包含一奈米銀線層，該鏤空圖案佔該透明電極層的面積比例約為2%-5%之間。The electrode structure as described in claim 1, wherein the transparent electrode layer comprises at least a nanosilver wire layer, and the hollow pattern occupies an area ratio of about 2%-5% of the transparent electrode layer. 如請求項1所述之電極結構，其中，該透明電極層至少包含一奈米銀線層，該鏤空圖案佔該透明電極層的面積比例約小於7%。The electrode structure as described in claim 1, wherein the transparent electrode layer comprises at least a nanosilver wire layer, and the hollow pattern accounts for less than 7% of the area of the transparent electrode layer. 如請求項1所述之電極結構，其中，該電極結構有至少一虛擬電極，該虛擬電極形成有鏤空圖案，該虛擬電極區上的該鏤空圖案之複數第一鏤空段以及複數第二鏤空段的曲率皆不等於零。The electrode structure as described in claim 1, wherein the electrode structure has at least one virtual electrode, the virtual electrode is formed with a hollow pattern, and the curvatures of the plurality of first hollow segments and the plurality of second hollow segments of the hollow pattern on the virtual electrode region are not equal to zero. 一種包含如請求項1所述之電極結構的裝置。A device comprising the electrode structure as described in claim 1.

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