TW202403863A - Method for producing ground wafer and method for producing wafer - Google Patents
Method for producing ground wafer and method for producing wafer Download PDFInfo
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- TW202403863A TW202403863A TW112118077A TW112118077A TW202403863A TW 202403863 A TW202403863 A TW 202403863A TW 112118077 A TW112118077 A TW 112118077A TW 112118077 A TW112118077 A TW 112118077A TW 202403863 A TW202403863 A TW 202403863A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 60
- 239000011347 resin Substances 0.000 claims abstract description 255
- 229920005989 resin Polymers 0.000 claims abstract description 255
- 238000012545 processing Methods 0.000 claims description 84
- 239000002994 raw material Substances 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 25
- 239000007858 starting material Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 149
- 230000000052 comparative effect Effects 0.000 description 19
- 238000009826 distribution Methods 0.000 description 16
- 238000005498 polishing Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
本發明關於一種研削晶圓的製造方法及一種晶圓的製造方法。The invention relates to a manufacturing method of grinding a wafer and a manufacturing method of the wafer.
以往，半導體晶圓為了藉由照相製版來製作微細的圖案，要求有晶圓表面的平坦化。特別是，提案有一種技術，其藉由降低被稱為奈米形貌的表面起伏來用以使半導體晶圓的平坦度提升。Conventionally, in order to produce fine patterns on semiconductor wafers by photolithography, the flattening of the wafer surface was required. In particular, a technology is proposed to improve the flatness of semiconductor wafers by reducing surface undulations called nanotopography.
作為這樣的晶圓的平坦化加工方法，例如專利文獻1中揭示了一種加工製程，其包含如下步驟：樹脂塗佈步驟，其以樹脂覆蓋由晶棒切片而成的晶圓的第一面的整面；及，研削步驟，其保持晶圓的第一面來將晶圓的第二面進行研削之後，保持晶圓的第二面來將晶圓的第一面進行研削(參照第2圖)。As a method of flattening such a wafer, for example, Patent Document 1 discloses a processing process that includes the following steps: a resin coating step of covering the first surface of a wafer sliced from a wafer with resin. The whole surface; and, the grinding step, which holds the first surface of the wafer to grind the second surface of the wafer, and then holds the second surface of the wafer to grind the first surface of the wafer (refer to Figure 2 ).
此外，例如專利文獻2中揭示了一種加工製程，其包含如下步驟：一次研削步驟，其保持由晶棒切片而成的晶圓的第一面來將晶圓的第二面進行研削之後，保持晶圓的第二面來將晶圓的第一面進行研削；樹脂塗佈步驟，其接續一次研削步驟，以樹脂覆蓋晶圓的第二面的整面；及，研削步驟，其接續該樹脂塗佈步驟，以晶圓的第二面為基準面進行保持，將晶圓的第一面進行研削，並且在去除樹脂後以晶圓的第一面為基準面地將晶圓的第二面進行研削。 [先前技術文獻] (專利文獻) In addition, for example, Patent Document 2 discloses a processing process that includes the following steps: a grinding step in which the first surface of a wafer sliced from a crystal ingot is held to grind the second surface of the wafer, and then the second surface of the wafer is grinded. The second side of the wafer is used to grind the first side of the wafer; a resin coating step is continued with a grinding step to cover the entire second side of the wafer with resin; and a grinding step is continued with the resin In the coating step, the second surface of the wafer is held as a reference surface, the first surface of the wafer is ground, and after the resin is removed, the second surface of the wafer is used as a reference surface. Carry out grinding. [Prior technical literature] (patent document)
專利文獻1：日本特開平08-066850號公報。 專利文獻2：日本特開2011-249652號公報。 專利文獻3：日本特開2009-148866號公報。 專利文獻4：國際公開第2019/163017號。 Patent document 1: Japanese Patent Application Publication No. 08-066850. Patent Document 2: Japanese Patent Application Publication No. 2011-249652. Patent Document 3: Japanese Patent Application Publication No. 2009-148866. Patent Document 4: International Publication No. 2019/163017.
[發明所欲解決的問題] 當在切片步驟中，發生於切斷後的晶圓表面的起伏較大時，會有奈米形貌惡化的問題。 [Problem to be solved by the invention] When large undulations occur on the surface of the cut wafer during the slicing step, there will be a problem of deterioration of the nanomorphology.
作為對策，提案有一種如記載於專利文獻3的改善技術，其利用樹脂包覆於晶圓的其中一面來進行研削的加工方法，重複兩次依序為樹脂貼合、研削的步驟，藉此進行改善。As a countermeasure, an improvement technology such as that described in Patent Document 3 has been proposed, which utilizes a processing method in which one side of the wafer is coated with resin and ground, and the steps of resin bonding and grinding are repeated twice. Make improvements.
在專利文獻1所示的以往的方法中，當樹脂貼合條件(樹脂種類和樹脂滴下量、加壓負重、加壓速度、加壓負重分布等)不適當時，會有樹脂厚度分布會變得不均勻並且研削加工後的晶圓的翹曲(Warp)惡化的問題(請參照第3圖)。In the conventional method shown in Patent Document 1, when the resin bonding conditions (resin type, resin dripping amount, press load, press speed, press load distribution, etc.) are inappropriate, the resin thickness distribution may become The problem of uneven and worsened warp of the wafer after grinding (please refer to Figure 3).
特別是，在專利文獻3的技術中會在相同面上實行樹脂貼合，因此當樹脂厚度分布不均勻時，會造成使翹曲惡化這樣的問題(請參照第4圖)。In particular, in the technology of Patent Document 3, the resin is bonded on the same surface. Therefore, if the resin thickness distribution is uneven, there will be a problem of worsening warpage (see Figure 4).
此外，還有一種技術，其藉由重複連續2次上述樹脂貼合研削，來製作進一步起伏較少的晶圓(例如專利文獻4)。該文獻中，依序進行樹脂貼合、正面研削、樹脂貼合、反面研削、正面研削。但是可知：在第一次的樹脂貼合研削後，會起因於加工破壞的正反差異而使得晶圓大幅地翹曲，所以樹脂貼合第2次的樹脂厚度分布會容易變得不均勻，因此在最終性的研削後會造成翹曲惡化(請參照第5圖)。In addition, there is a technology that repeats the above-mentioned resin bonding and grinding twice in succession to produce a wafer with further less waviness (for example, Patent Document 4). In this document, resin bonding, front grinding, resin bonding, back grinding, and front grinding are performed in this order. However, it is known that after the first resin bonding grinding, the wafer will warp significantly due to the positive and negative differences in processing damage, so the resin thickness distribution of the second resin bonding will easily become uneven. Therefore, warpage will worsen after final grinding (please refer to Figure 5).
研削晶圓和鏡面研磨晶圓較佳是：不僅奈米形貌良好，並且以翹曲為代表的長波長的起伏也良好。Grinding wafers and mirror-polished wafers are preferred if they not only have good nanomorphology, but also have good long-wavelength fluctuations represented by warpage.
本發明是用以解決上述問題而成者，目的在於提供一種研削晶圓的製造方法以及一種晶圓的製造方法，該研削晶圓的製造方法關於一種半導體晶圓的加工製程、特別是對原料晶圓的表面進行高平坦化的加工製程，而能夠使奈米形貌及翹曲等級同時變得良好，該晶圓的製造方法能夠製造平坦度等品質優異的晶圓。 [解決問題的技術手段] The present invention is made to solve the above problems, and aims to provide a manufacturing method of grinding wafers and a manufacturing method of wafers. The manufacturing method of grinding wafers is related to a processing process of semiconductor wafers, especially raw materials. The surface of the wafer is subjected to a highly planarized processing process, which can improve the nanomorphology and warpage level at the same time. This wafer manufacturing method can manufacture wafers with excellent flatness and other qualities. [Technical means to solve problems]
本發明是用以達成上述目的而成者，提供一種研削晶圓的製造方法，其是將具有第一主面與第二主面之原料晶圓進行研削，來製造研削晶圓，該製造方法包含如下步驟：第一樹脂貼合步驟，其對前述原料晶圓的前述第一主面實行樹脂貼合，來將第一樹脂層形成於前述第一主面；對不具前述第一樹脂層之前述第二主面進行單面研削的步驟；第一樹脂層去除步驟，其將前述第一樹脂層剝離；對前述第一主面進行單面研削的步驟；第二樹脂貼合步驟，其對前述第二主面實行樹脂貼合，來將第二樹脂層形成於前述第二主面；對不具前述第二樹脂層之前述第一主面進行單面研削的步驟；第二樹脂層去除步驟，其將前述第二樹脂層剝離；及，對前述第二主面進行單面研削的步驟。The present invention is achieved to achieve the above object, and provides a manufacturing method of a ground wafer, which grinds a raw material wafer having a first main surface and a second main surface to produce a ground wafer. The manufacturing method It includes the following steps: a first resin bonding step, which performs resin bonding on the first main surface of the raw material wafer to form a first resin layer on the first main surface; The step of performing single-sided grinding on the aforementioned second main surface; the step of removing the first resin layer, which peels off the aforementioned first resin layer; the step of performing single-sided grinding on the aforementioned first principal surface; and the step of second resin bonding, which involves peeling off the first resin layer. The step of performing resin bonding on the aforementioned second main surface to form a second resin layer on the aforementioned second main surface; the step of single-sided grinding of the aforementioned first main surface without the aforementioned second resin layer; the step of removing the second resin layer , which peels off the aforementioned second resin layer; and, the step of performing single-sided grinding on the aforementioned second main surface.
根據如此的研削晶圓的製造方法，能夠使奈米形貌及翹曲等級同時變得良好。According to such a grinding wafer manufacturing method, both the nanomorphology and the warpage level can be improved.
此時，能夠設為如下的研削晶圓的製造方法，其使用將晶棒進行切片後的晶圓作為前述原料晶圓。In this case, a method of manufacturing a ground wafer can be adopted, which uses a wafer obtained by slicing a crystal ingot as the raw material wafer.
本發明的研削晶圓的製造方法，特別適於使用這樣的原料晶圓的情況。The method of manufacturing a ground wafer of the present invention is particularly suitable when such a raw material wafer is used.
此時，能夠設為如下的研削晶圓的製造方法，當要實行前述第一樹脂貼合步驟及前述第二樹脂貼合步驟時，是在前述第一主面及前述第二主面的面狀態呈相同的加工步驟後的狀態下實行。At this time, the manufacturing method of the ground wafer can be as follows. When the first resin bonding step and the second resin bonding step are to be carried out, the surface of the first main surface and the second main surface are It is executed in the same state as after the same processing step.
藉此，能夠更有效地使奈米形貌及翹曲等級同時變得良好。In this way, the nanomorphology and warpage level can be improved more effectively at the same time.
本發明提供一種晶圓的製造方法，其在對具有第一主面與第二主面之原料晶圓實施複數次相同的加工步驟的晶圓的製造方法中，將要實行前述加工步驟時的前述第一主面及前述第二主面的面狀態作成相同的加工步驟後的狀態，然後在第奇數次的前述加工步驟與第偶數次的前述加工步驟中，替換前述原料晶圓的前述第一主面與前述第二主面來實行加工。The present invention provides a method for manufacturing a wafer, in which a raw material wafer having a first main surface and a second main surface is subjected to a plurality of identical processing steps. The surface states of the first main surface and the second main surface are made into the same state after the processing steps, and then in the odd-numbered processing steps and the even-numbered processing steps, the first surface of the raw material wafer is replaced. The main surface is processed with the aforementioned second main surface.
根據這樣的晶圓的製造方法，能夠製造一種平坦度等品質優異的晶圓。According to such a wafer manufacturing method, a wafer having excellent qualities such as flatness can be manufactured.
此時，能夠設為如下的晶圓的製造方法，前述加工步驟是如下步驟：對前述原料晶圓的前述第一主面實行樹脂貼合，對前述第二主面進行單面研削後，將樹脂剝離來對前述第一主面進行單面研削。In this case, the wafer manufacturing method can be as follows. The processing step is as follows: performing resin bonding on the first main surface of the raw material wafer, performing single-sided grinding on the second main surface, and then grinding the second main surface with resin. The resin is peeled off to grind the first main surface on one side.
藉此，能夠使奈米形貌及翹曲等級同時變得良好。 [發明的效果] In this way, the nanomorphology and warpage level can be improved at the same time. [Effects of the invention]
如同以上，根據本發明的研削晶圓的製造方法，變得能夠使奈米形貌及翹曲等級同時變得良好。此外，根據本發明的晶圓的製造方法，變得能夠製造平坦度等品質優異的晶圓。As described above, according to the manufacturing method of the ground wafer of the present invention, it is possible to improve both the nanomorphology and the warpage level. Furthermore, according to the wafer manufacturing method of the present invention, it becomes possible to manufacture a wafer having excellent qualities such as flatness.
以下，詳細地說明本發明，但是本發明不限於以下的說明。The present invention will be described in detail below, but the present invention is not limited to the following description.
如同上述，仍謀求一種研削晶圓的製造方法以及一種晶圓的製造方法，該研削晶圓的製造方法用以使奈米形貌及翹曲等級同時變得良好，該晶圓的製造方法能夠製造平坦度等品質優異的晶圓。As mentioned above, there is still a need for a manufacturing method of a ground wafer that can simultaneously improve the nanomorphology and warpage level, and a manufacturing method of a wafer that can Manufacture wafers with excellent quality such as flatness.
發明人致力於反覆研究上述技術問題，結果發現藉由一種研削晶圓的製造方法，能夠使奈米形貌及翹曲等級同時變得良好，進而完成本發明，該研削晶圓的製造方法是將具有第一主面與第二主面之原料晶圓進行研削，來製造研削晶圓，該製造方法包含如下步驟：第一樹脂貼合步驟，其對前述原料晶圓的前述第一主面實行樹脂貼合，來將第一樹脂層形成於前述第一主面；對不具前述第一樹脂層之前述第二主面進行單面研削的步驟；第一樹脂層去除步驟，其將前述第一樹脂層剝離；對前述第一主面進行單面研削的步驟；第二樹脂貼合步驟，其對前述第二主面實行樹脂貼合，來將第二樹脂層形成於前述第二主面；對不具前述第二樹脂層之前述第一主面進行單面研削的步驟；第二樹脂層去除步驟，其將前述第二樹脂層剝離；及，對前述第二主面進行單面研削的步驟。The inventor devoted himself to repeatedly studying the above technical problems, and found that through a manufacturing method of grinding wafers, the nanomorphology and warpage level can be improved at the same time, and then completed the present invention. The manufacturing method of grinding wafers is A raw material wafer having a first main surface and a second main surface is ground to produce a ground wafer. The manufacturing method includes the following steps: a first resin bonding step, which performs a first resin bonding step on the first main surface of the raw material wafer. Performing resin bonding to form a first resin layer on the first main surface; a step of single-sided grinding of the second main surface without the first resin layer; and a first resin layer removal step, which removes the first resin layer from the first main surface. A resin layer peeling off; a step of single-sided grinding of the first main surface; a second resin bonding step of performing resin bonding on the second main surface to form a second resin layer on the second main surface ; The step of single-sided grinding of the aforementioned first main surface without the aforementioned second resin layer; the step of removing the second resin layer, which peels off the aforementioned second resin layer; and, the step of single-sided grinding of the aforementioned second main surface steps.
發明人還發現藉由一種晶圓的製造方法，能夠製造平坦度等品質優異的晶圓，進而完成本發明，該晶圓的製造方法是在對具有第一主面與第二主面之原料晶圓實施複數次相同的加工步驟的晶圓的製造方法中，將要實行前述加工步驟時的前述第一主面及前述第二主面的面狀態作成相同的加工步驟後的狀態，然後在第奇數次的前述加工步驟與第偶數次的前述加工步驟中，替換前述原料晶圓的前述第一主面與前述第二主面來實行加工。The inventor also found that a wafer with excellent qualities such as flatness can be manufactured through a wafer manufacturing method. The wafer manufacturing method is based on the raw material having a first main surface and a second main surface. In a wafer manufacturing method in which a wafer is subjected to a plurality of identical processing steps, the surface conditions of the first main surface and the second main surface when the aforementioned processing step is to be performed are changed to the state after the same processing step, and then the surface conditions are changed to the state after the same processing step. In the odd-numbered processing steps and the even-numbered processing steps, processing is performed by replacing the first main surface and the second main surface of the raw material wafer.
以下，參照圖式來進行說明。Hereinafter, description will be given with reference to the drawings.
本發明中發現，在實施複數次(偶數次)相同的加工步驟的晶圓的製造方法中，在第奇數次的加工步驟中將其中一面視為主面來進行加工，在第偶數次的加工步驟中，將另一面視為主面來進行加工，藉此能夠抵銷由於加工所造成的翹曲的做工。亦即，本發明的晶圓的製造方法，是如下晶圓的製造方法，其在對具有第一主面與第二主面之原料晶圓實施複數次相同的加工步驟的晶圓的製造方法中，將實行加工步驟時的前述第一主面及前述第二主面的面狀態作成相同的加工步驟後的狀態，然後在第奇數次的加工步驟與第偶數次的加工步驟中，替換原料晶圓的前述第一主面與前述第二主面來實行加工。藉此，能夠製造平坦度等品質優異的晶圓。該加工步驟例如利用研削步驟、拋光步驟、DSP(雙面研磨)步驟、研磨步驟等重複複數次相同的步驟時是有效的。The present invention found that in a method for manufacturing a wafer in which the same processing steps are performed multiple times (an even number of times), one side is treated as the main surface in the odd-numbered processing steps. In this step, the other side is regarded as the main surface for processing, which can offset the workmanship of warpage caused by processing. That is, the wafer manufacturing method of the present invention is a wafer manufacturing method in which the same processing steps are performed a plurality of times on a raw wafer having a first main surface and a second main surface. , the surface conditions of the first main surface and the second main surface when performing the processing steps are made into the same state after the processing steps, and then the raw materials are replaced in the odd-numbered processing steps and the even-numbered processing steps. Processing is performed on the first main surface and the second main surface of the wafer. This enables manufacturing of wafers with excellent qualities such as flatness. This processing step is effective when the same step is repeated a plurality of times using, for example, a grinding step, a polishing step, a DSP (double-side polishing) step, and a polishing step.
特別是，本發明的晶圓的製造方法較佳是：上述加工步驟是如下步驟：對原料晶圓的第一主面實行樹脂貼合，對第二主面進行單面研削後，將樹脂剝離來對第一主面進行單面研削。In particular, the wafer manufacturing method of the present invention is preferably such that the above-mentioned processing steps are as follows: performing resin bonding on the first main surface of the raw material wafer, performing single-sided grinding on the second main surface, and then peeling off the resin. To perform single-sided grinding on the first main surface.
更具體而言，本發明提供一種研削晶圓的製造方法，其是將具有第一主面與第二主面之原料晶圓進行研削，來製造研削晶圓，該製造方法包含如下步驟：第一樹脂貼合步驟，對原料晶圓的第一主面實行樹脂貼合，來將第一樹脂層形成於第一主面；對不具第一樹脂層之第二主面進行單面研削的步驟；第一樹脂層去除步驟，其將第一樹脂層剝離；對第一主面進行單面研削的步驟；第二樹脂貼合步驟，其對第二主面實行樹脂貼合，來將第二樹脂層形成於第二主面；對不具第二樹脂層之第一主面進行單面研削的步驟；第二樹脂層去除步驟，其將第二樹脂層剝離；及，對第二主面進行單面研削的步驟。More specifically, the present invention provides a method for manufacturing a ground wafer, which grinds a raw material wafer having a first main surface and a second main surface to produce a ground wafer. The manufacturing method includes the following steps: A resin bonding step, which involves resin bonding the first main surface of the raw wafer to form a first resin layer on the first main surface; a step of single-sided grinding of the second main surface without the first resin layer ; The first resin layer removal step, which peels off the first resin layer; the step of single-sided grinding of the first main surface; the second resin bonding step, which performs resin bonding on the second main surface to make the second The resin layer is formed on the second main surface; the step of performing single-sided grinding on the first main surface without the second resin layer; the second resin layer removal step, which peels off the second resin layer; and, performing a single-sided grinding step on the second main surface. Single side grinding steps.
例如，當重複2次的「依序為正面樹脂貼合、反面研削、正面研削的加工」時，實行「在依序為正面樹脂貼合、反面研削、正面研削的加工後，翻轉晶圓然後實行依序為反面樹脂貼合、正面研削、反面研削的加工」。發現能藉此抵銷由於樹脂貼合加工所造成的翹曲的做工。For example, when "resin bonding the front surface, grinding the back surface, and grinding the front surface in this order" is repeated twice, perform "resin bonding the front surface, grinding the back surface, and grinding the front surface in this order, then flip the wafer and then The processing of back-side resin bonding, front-side grinding, and back-side grinding is carried out in this order." Discovered a workmanship that can offset warpage caused by resin lamination processing.
再者，正面、反面的標示僅表示面的不同，而能夠與第一主面、第二主面這樣的用語進行區別。上述步驟亦同於「在依序為反面樹脂貼合、正面研削、反面研削的加工後，翻轉晶圓然後實行依序為正面樹脂貼合、反面研削、正面研削」的加工。只要基於在任一面形成裝置或在之後的步驟中實行晶圓翻轉，來設定開始加工的面(貼有樹脂之面)即可。Furthermore, the indications of front and back only indicate the difference between the surfaces, and can be distinguished from terms such as first main surface and second main surface. The above-mentioned steps are also the same as the processing of "after the back-side resin bonding, front-side grinding, and back-side grinding are performed in sequence, the wafer is turned over, and then the front-side resin bonding, back side grinding, and front side grinding are performed in sequence." Just set the surface to start processing (the surface on which the resin is attached) based on whether the wafer is turned over in any surface forming device or in a subsequent step.
本發明中，例如在將晶圓的正面設為第一主面並將晶圓的反面設為第二主面時，在第奇數次的加工，將第一主面或第二主面視為主面進行加工，在第偶數次的加工，將與第奇數次為相反的面(第二主面或第一主面)視為主面進行加工，藉此能夠抵銷由於加工方法所造成的翹曲的做工。In the present invention, for example, when the front surface of the wafer is the first main surface and the back surface of the wafer is the second main surface, in the odd-numbered processing, the first main surface or the second main surface is regarded as The main surface is processed. In the even-numbered processing, the opposite surface (the second main surface or the first main surface) to the odd-numbered processing is regarded as the main surface for processing. This can offset the processing method. Warped workmanship.
更具體而言，如第1圖所示，依序實行下述步驟能夠抵銷由於進行樹脂貼合等加工所造成的偏差，會使得晶圓變得能夠加工，該晶圓不僅奈米形貌良好，並且以翹曲為代表的長波長的起伏也良好，該等步驟是：第一樹脂貼合步驟，將第一樹脂層形成於原料晶圓W的第一主面S1；對不具樹脂之第二主面S2進行單面研削的步驟；第一樹脂層去除步驟，其將第一樹脂層去除(剝離)；第二樹脂貼合步驟，其在對曾貼有樹脂(第一樹脂層)之第一主面S1進行單面研削的步驟後，對與第一次不同的面也就是第二主面S2實行樹脂貼合；對不具樹脂之第一主面S1進行單面研削的步驟；第二樹脂層去除步驟，其將第二樹脂層去除(剝離)；及，對曾貼有樹脂(第二樹脂層)之第二主面S2進行單面研削的步驟。More specifically, as shown in Figure 1, performing the following steps in sequence can offset the deviation caused by resin bonding and other processing, making the wafer processable. The wafer not only has nanometer morphology It is good, and the fluctuation of long wavelength represented by warpage is also good. These steps are: the first resin bonding step, forming the first resin layer on the first main surface S1 of the raw material wafer W; A step of single-sided grinding of the second main surface S2; a first resin layer removal step of removing (peeling off) the first resin layer; a second resin bonding step of having resin (first resin layer) attached to the opposite side After the step of single-sided grinding of the first main surface S1, the second main surface S2, which is different from the first surface, is resin bonded; and the step of single-sided grinding of the first main surface S1 without resin; The second resin layer removal step is to remove (peele off) the second resin layer; and the step of single-sided grinding of the second main surface S2 on which the resin (second resin layer) has been attached.
可知在這樣地實施2次「依序為樹脂貼合、對不具樹脂之面的單面研削、去除(剝離)樹脂後對曾貼有樹脂之面的單面研削」這樣一連串的步驟時，藉由第二次(第偶數次)在與第一次(第奇數次)不同的面上進行樹脂貼合，即便在樹脂貼合條件(樹脂種類和樹脂滴下量、加壓負重、加壓速度、加壓負重分布等)偏差而樹脂厚度分佈不均勻時，仍會使研削加工後的晶圓的翹曲(Warp)穩定。當如此地重複相同的加工製程時會是有效的。It can be seen that when a series of steps such as "resin bonding, grinding of one side of the surface without resin, removal (peeling) of the resin and then grinding of the single side of the surface with resin" are performed twice, From the second time (even-numbered time), the resin bonding is performed on a different surface from the first time (odd-numbered time). Even if the resin bonding conditions (resin type and resin dripping amount, pressurization load, pressurization speed, If the resin thickness distribution is uneven (pressure load distribution, etc.), the warp of the ground wafer will still be stable. This is effective when the same machining process is repeated in this manner.
特別較佳是，當要貼合樹脂時，預先使第一主面S1及第二主面S2的面狀態一致。例如能夠設為如下：第一次當要貼合樹脂時，第一主面及第二主面皆為切片面，第二次當要貼合樹脂時，第一主面及第二主面皆為研削面等。較佳是在去除正反的破壞差等的狀態下進行樹脂貼合。It is particularly preferable to make the surface states of the first main surface S1 and the second main surface S2 consistent before bonding the resin. For example, it can be set as follows: when the resin is to be bonded for the first time, the first main surface and the second main surface are both sliced surfaces; when the resin is to be bonded for the second time, the first main surface and the second main surface are both For grinding surfaces, etc. It is preferable to perform resin bonding in a state where damage differences between the front and back sides are removed.
也就是說，當在切片後將晶圓進行加工時，藉由進行第一次的「依序為雙面在切片面的狀態下的樹脂貼合、對不具樹脂之面的單面研削、剝離樹脂後對曾貼有樹脂之面的單面研削」，能使雙面預先成為研削面，藉此第二次進行「依序為雙面在研削面的狀態下的樹脂貼合、對不具樹脂之面的單面研削、剝離樹脂後對曾貼有樹脂之面的單面研削」。藉此，不會發生起因於加工破壞的正反差的晶圓的翹曲，樹脂貼合第二次的樹脂厚度分佈也容易穩定而最終性的研削後翹曲會呈良好，該加工破壞是由於「依序為雙面在切片面的狀態下的樹脂貼合、正面研削、在一面為切片面且另一面為研削面的面狀態下的樹脂貼合、反面研削、正面研削」與實行連續2次的樹脂貼合時所產生的面狀態的差異所造成者。That is to say, when the wafer is processed after slicing, by performing the first "resin bonding of both sides in the state of the slicing surface, single-sided grinding of the side without resin, and peeling in this order" "One-sided grinding of the surface that has been pasted with resin after resin" can make both sides become grinding surfaces in advance, thereby performing the second "resin bonding of both sides in the state of grinding the surfaces, and then grinding the surfaces without resin" One-sided grinding of the surface, peeling off the resin, and single-sided grinding of the surface where the resin was attached." This prevents warping of the wafer due to contrast due to processing damage, and the resin thickness distribution in the second resin bonding process is easily stabilized, resulting in good warpage after final grinding. "Sequentially, resin bonding with both sides sliced, front grinding, resin bonding with one side sliced and the other grinding, back grinding, front grinding" and execution of Continuous 2 It is caused by the difference in surface condition caused by the resin lamination.
作為樹脂貼合方法及條件，並無特別限定，例如可實施下述的步驟。The resin bonding method and conditions are not particularly limited. For example, the following steps can be implemented.
(樹脂貼合步驟) 參照第1圖進行說明。最初準備具有平坦面的下平台1。在該下平台1上，例如鋪上對紫外光呈透明的光穿透性膜2。接下來，在光穿透性膜2上供給並塗佈樹脂層(也可稱為平坦化樹脂層)的前驅體，也就是可塑化狀態例如液狀的樹脂。作為樹脂使用UV硬化性樹脂。但是，樹脂的材料並無特別限定。 (Resin bonding step) This will be explained with reference to Figure 1. Initially prepare the lower platform 1 with a flat surface. For example, a light-transmitting film 2 that is transparent to ultraviolet light is laid on the lower platform 1 . Next, the precursor of the resin layer (which may also be called a planarizing resin layer), that is, the resin in a plasticized state, such as a liquid state, is supplied and coated on the light-transmitting film 2 . As the resin, UV curable resin is used. However, the material of the resin is not particularly limited.
繼而，使原料晶圓W的第二主面S2吸附保持於上平台(未圖示)。然後，以第一主面S1與樹脂相接的方式，使該狀態的原料晶圓W承載於該樹脂上。藉此，樹脂層的前驅體也就是樹脂會被塗佈於晶圓的第一主面S1上。Then, the second main surface S2 of the raw material wafer W is adsorbed and held on the upper platform (not shown). Then, the raw material wafer W in this state is placed on the resin such that the first main surface S1 is in contact with the resin. Thereby, the precursor of the resin layer, that is, the resin, is coated on the first main surface S1 of the wafer.
接下來，以使樹脂的面呈平坦的方式，使用上平台來以特定的負重進行按壓。藉由調整此時的按壓，能夠調整樹脂的厚度的偏差。藉由進行適當的按壓，能夠將樹脂適當地按開，而能夠獲得具有適當的樹脂厚度分布之樹脂層。Next, the upper platform is used to press with a specific load so that the surface of the resin becomes flat. By adjusting the pressing force at this time, the variation in the thickness of the resin can be adjusted. By performing appropriate pressing, the resin can be appropriately pushed open, and a resin layer having an appropriate resin thickness distribution can be obtained.
繼而，使樹脂硬化。進行硬化的方法並無特別限定，如第1圖所示，例如能夠自能夠透光的下平台側照射UV光，來使樹脂硬化。此外，自上平台及下平台取下已組裝有樹脂層及光穿透性膜2之晶圓，然後自光穿透性膜側對已取下的晶圓照射UV光，即能夠使樹脂硬化。再者，樹脂的硬化處理可依據樹脂的材料來變更。當不進行光硬化處理時，能夠省略光穿透性膜的舖設。藉由該硬化處理，可獲得附有樹脂層3之晶圓。Then, the resin is hardened. The method of curing is not particularly limited. As shown in FIG. 1 , for example, the resin can be cured by irradiating UV light from the light-transmissive lower platform side. In addition, the resin layer can be hardened by removing the wafer with the resin layer and the light-transmitting film 2 assembled from the upper platform and the lower platform, and then irradiating the removed wafer with UV light from the light-transmitting film side. . Furthermore, the hardening process of the resin can be changed according to the material of the resin. When the photohardening treatment is not performed, the laying of the light-transmitting film can be omitted. Through this hardening process, a wafer with the resin layer 3 can be obtained.
(單面研削步驟) 繼而，實施正反面加工。也就是說，以樹脂層3的平坦面為基準面，使附有如以上操作所獲得的樹脂層3之晶圓吸附保持於研削裝置的夾頭座5。該夾頭座5例如是多孔質陶瓷製，能夠真空吸附晶圓來進行保持。此外，夾頭座5具備可調整晶圓相對於研削手段的軸角度的功能。但是，在本發明中，吸附保持晶圓的手段並無特別限定。 (Single side grinding step) Then, the front and back sides are processed. That is, using the flat surface of the resin layer 3 as a reference surface, the wafer with the resin layer 3 obtained in the above operation is adsorbed and held on the chuck seat 5 of the grinding device. The chuck holder 5 is made of, for example, porous ceramics, and can vacuum-suck and hold the wafer. In addition, the chuck holder 5 has a function of adjusting the axial angle of the wafer relative to the grinding means. However, in the present invention, the means for adsorbing and holding the wafer is not particularly limited.
再者，光穿透性膜與夾頭座5相接，但是光穿透性膜具有小於晶圓及樹脂層的厚度這樣的厚度，所以不會阻礙吸附保持。Furthermore, the light-transmitting film is in contact with the chuck base 5, but the light-transmitting film has a thickness smaller than the thickness of the wafer and the resin layer, so it does not hinder adsorption and holding.
繼而，對在被吸附保持的狀態的晶圓的第二主面S2進行研削來作為第一加工。顯示了使用研削砂輪4進行研削的示例，但是進行研削的手段並無特別限定。Next, the second main surface S2 of the wafer in the adsorbed and held state is ground as the first process. An example of grinding using the grinding wheel 4 is shown, but the means for grinding is not particularly limited.
(樹脂層去除步驟) 繼而，自夾頭座5釋放經第一加工的晶圓W。接下來，自晶圓去除樹脂層3及光穿透性膜2。藉此，獲得單面經加工的晶圓。所獲得的晶圓具有經第一加工的第二主面S2及與第二主面為相反側的第一主面S1。 (Resin layer removal step) Then, the first processed wafer W is released from the chuck holder 5 . Next, the resin layer 3 and the light-transmitting film 2 are removed from the wafer. Thereby, a single-sided processed wafer is obtained. The obtained wafer has the second main surface S2 that has undergone the first processing and the first main surface S1 that is opposite to the second main surface.
(單面研削步驟) 繼而，以使第一主面S1朝上的方式翻轉先前獲得的晶圓，然後使經第一加工的第二主面S2吸附保持於夾頭座5。晶圓會由於該吸附造成彈性變形。此時，經第一加工的第二主面S2也會彈性變形，而成為追隨夾頭座5的表面的第二主面S2。另一方面，第一主面S1會彈性變形而成為移位至下方的第一主面S1。 (Single side grinding step) Then, the previously obtained wafer is turned over so that the first main surface S1 faces upward, and then the first processed second main surface S2 is adsorbed and held on the chuck holder 5 . The wafer will elastically deform due to this adsorption. At this time, the second main surface S2 that has undergone the first processing will also elastically deform and become the second main surface S2 that follows the surface of the chuck base 5 . On the other hand, the first main surface S1 is elastically deformed and becomes the first main surface S1 displaced downward.
繼而，對這樣操作而在被吸附保持的狀態的晶圓的第一主面S1進行研削來作為第二加工。作為研削手段，使用研削砂輪4來對第一主面S1進行研削。Next, the first main surface S1 of the wafer held by adsorption in this manner is ground as a second process. As a grinding means, the grinding wheel 4 is used to grind the first main surface S1.
以上，將自樹脂貼合步驟起至研削步驟為止設為一連串的加工製程，在本發明中會實施複數次(偶數次)的該加工製程。此時，在第奇數次的加工製程與第偶數次的加工製程中，將成為主面的面設為不同的面。In the above, it is assumed that the resin bonding step to the grinding step is a series of processing steps. In the present invention, this processing step is executed a plurality of times (an even number). At this time, in the odd-numbered processing steps and the even-numbered processing steps, the main surface is set to be a different surface.
也就是說，上述樹脂貼合是對第一主面S1實施，但是當最初(第奇數次)的加工製程是已對第一主面S1實施樹脂貼合時，在第二次(第偶數次)的加工製程中會對第二主面S2實施樹脂貼合。在如此地重複相同的製程時將要處理的面設為相反，藉此能夠抵銷由於加工製程所造成的翹曲的做工。 [實施例] That is to say, the above-mentioned resin bonding is performed on the first main surface S1, but when the first (odd-numbered) processing process is to perform resin bonding on the first main surface S1, in the second (even-numbered) process ), resin bonding will be performed on the second main surface S2. When the same process is repeated in this way, the surface to be processed is set to the opposite side, thereby counteracting the workmanship of warpage caused by the machining process. [Example]
以下，列舉實施例來具體地說明本發明，但是本發明不受該等實施例限定。Hereinafter, although an Example is given and this invention is demonstrated concretely, this invention is not limited to these Examples.
[實驗內容] (樹脂貼合加工條件) 作為原料晶圓，使用在切片後經倒角加工且直徑300 mm的P型Si單晶晶圓。作為覆蓋物使用UV硬化性樹脂，作為上述膜使用PET膜。將PET膜鋪在平坦的玻璃平台(下平台)，然後在該PET膜上滴下10 ml的UV硬化性樹脂。 [Experimental content] (Resin bonding processing conditions) As the raw material wafer, a P-type Si single crystal wafer with a diameter of 300 mm that was chamfered after slicing was used. A UV curable resin is used as the cover, and a PET film is used as the film. Spread the PET film on a flat glass platform (lower platform), and then drop 10 ml of UV curable resin on the PET film.
使晶圓吸附保持於陶瓷平台(上平台)，然後對上述樹脂進行擠壓來進行黏著。按壓控制是使保持陶瓷平台的伺服馬達驅動，然後加壓直到檢測出特定的負重為止。作為樹脂硬化用的光源使用了波長365 nm的UV-LED。The wafer is adsorbed and held on the ceramic platform (upper platform), and then the resin is squeezed to adhere. Pressure control drives the servo motor that holds the ceramic platform, and then pressurizes it until a specific load is detected. As a light source for resin hardening, a UV-LED with a wavelength of 365 nm is used.
(研削加工條件) 在研削加工中，使用了已黏合有金剛石磨粒者作為研削砂輪。對覆蓋物側進行真空吸附來實行研削加工。藉由調整夾頭座的軸角度，以使晶圓厚度偏差成為1 μm以下的方式實行調整。 (Grinding processing conditions) In the grinding process, diamond abrasive grains bonded to the grinding wheel are used. Vacuum the cover side to perform grinding. By adjusting the axis angle of the chuck holder, adjustments are made so that the wafer thickness deviation becomes 1 μm or less.
比較例1是未貼合樹脂地實施反面研削及正面研削。研削加工，如同上述加工條件。In Comparative Example 1, back surface grinding and front surface grinding were performed without laminating resin. Grinding processing is the same as the above processing conditions.
比較例2如第3圖所示，設為「依序為正面樹脂貼合、反面研削、正面研削」，僅實施1次樹脂貼合研削。再者，在研削反面後，將樹脂剝離後實施正面研削。樹脂貼合加工及研削加工，如同上述加工條件。In Comparative Example 2, as shown in Figure 3, "resin bonding of the front surface, grinding of the back surface, grinding of the front surface in this order" was performed, and resin bonding and grinding was performed only once. Furthermore, after grinding the back surface, the resin is peeled off and then the front surface is ground. Resin bonding processing and grinding processing are the same as the above processing conditions.
比較例3如第4圖所示，設為「依序為正面樹脂貼合、反面研削、正面研削、正面樹脂貼合、反面研削、正面研削」，實施重複2次的相同步驟。再者，2次皆在研削反面後，將樹脂剝離後實施正面研削(對相同面實施樹脂貼合)。樹脂貼合加工及研削加工，如同上述加工條件。In Comparative Example 3, as shown in Figure 4, the same steps were repeated twice as "resin bonding of the front surface, grinding of the back surface, grinding of the front surface, resin bonding of the front surface, grinding of the back surface, and grinding of the front surface in this order". Furthermore, in both cases, after grinding the back surface, the resin was peeled off and then the front surface was ground (resin bonding was performed on the same surface). Resin bonding processing and grinding processing are the same as the above processing conditions.
比較例4如第5圖所示，首先使晶圓翻轉後(此時，最終研削面的反面會成為上表面(反面為上))，設為「依序為正面樹脂貼合、反面研削、反面樹脂貼合、正面研削、反面研削」，連續地實施樹脂貼合研削。也就是說，反面研削後，將樹脂剝離後實行反面樹脂貼合。此外，正面研削後，將樹脂剝離後實施反面研削。樹脂貼合加工及研削加工，如同上述加工條件。Comparative Example 4 As shown in Figure 5, after the wafer is first turned over (at this time, the reverse side of the final grinding surface will become the upper surface (the reverse side is upper)), it is set to "resin bonding of the front side, grinding of the back side, and grinding of the back side in sequence. "Back-side resin bonding, front-side grinding, back-side grinding", resin bonding and grinding are performed continuously. In other words, after the back side is ground, the resin is peeled off and then the back side is resin bonded. In addition, after front-side grinding, the resin is peeled off and back-side grinding is performed. Resin bonding processing and grinding processing are the same as the above processing conditions.
實施例1如第1圖所示，首先使晶圓翻轉後(此時，最終研削面的反面會成為上表面(反面為上))，設為「依序為正面樹脂貼合、反面研削、正面研削後翻轉晶圓然後依序為反面樹脂貼合、正面研削、反面研削」，重複2次的相同步驟，但是第二次是對與第一次不同的面進行樹脂貼合。樹脂貼合加工及研削加工，如同上述加工條件。Embodiment 1 As shown in Figure 1, after the wafer is first turned over (at this time, the reverse side of the final grinding surface will become the upper surface (the reverse side is upper)), the sequence is set to "resin bonding of the front side, grinding of the back side, After front-side grinding, flip the wafer and then resin-bond the back-side, front-side grinding, and back-side grinding in sequence. Repeat the same steps twice, but the second time is resin bonding on a different surface from the first time. Resin bonding processing and grinding processing are the same as the above processing conditions.
再者，各比較例、實施例皆實行之後的評價，因此針對所獲得的晶圓利用相同條件實行雙面研磨及將上表面進行單面研磨的鏡面研磨加工。該等鏡面研磨是以一般性實施的條件來實施。In addition, since subsequent evaluations were performed for each of the comparative examples and examples, the obtained wafers were subjected to mirror polishing processes of double-side polishing and single-side polishing of the upper surface under the same conditions. The mirror polishing is carried out under general implementation conditions.
(測定及結果) 針對翹曲及奈米形貌的測定，使用了光學干涉式的平坦度及奈米形貌測定裝置(KLA公司製造：WaferSight2+)。作為奈米形貌的指標，使用SQMM 10 mm×10 mm。在表1中顯示在實施例及比較例中實施的步驟與評價結果。 (Measurement and results) For the measurement of warpage and nanomorphology, an optical interference type flatness and nanomorphology measuring device (WaferSight2+ manufactured by KLA Corporation) was used. As an indicator of nanomorphology, SQMM 10 mm × 10 mm was used. Table 1 shows the procedures performed in the Examples and Comparative Examples and the evaluation results.
[表1]
比較例1中，翹曲達到目標值，但是是未貼合樹脂地實施研削，因此奈米形貌呈不良。In Comparative Example 1, the warpage reached the target value, but grinding was performed without resin bonding, so the nanomorphology was defective.
比較例2中，藉由樹脂貼合研削而改善了奈米形貌，但是翹曲惡化。這是因為樹脂厚度分布不均勻，所以會由於樹脂貼合研削造成翹曲的做工所致。In Comparative Example 2, the nanomorphology was improved by resin bonding grinding, but the warpage worsened. This is because the resin thickness is unevenly distributed, so the workmanship causes warping due to resin bonding and grinding.
相較於比較例2，比較例3的奈米形貌更為改善，但是翹曲惡化。翹曲進一步惡化的原因，認為是因為在樹脂厚度分布不均勻的狀態下重複2次樹脂貼合研削，因而進而對翹曲進行做工所致。Compared with Comparative Example 2, the nanomorphology of Comparative Example 3 is more improved, but the warpage is worsened. The reason why the warpage worsened is thought to be because the resin bonding and grinding was repeated twice in a state where the resin thickness distribution was uneven, and the warpage was further processed.
相較於比較例2，比較例4的奈米形貌更為改善，但是翹曲惡化。Compared with Comparative Example 2, the nanomorphology of Comparative Example 4 is more improved, but the warpage is worsened.
第一次的樹脂貼合研削(依序為正面樹脂貼合、反面研削)後的晶圓的正面為切片面，反面為研削面，而正反面的加工破壞不同。因此，會起因於加工破壞的正反面差異，晶圓會呈大幅地翹曲的狀態。After the first resin bonding and grinding (resin bonding on the front and grinding on the back in sequence), the front of the wafer is the slicing surface and the back is the grinding surface, and the processing damage on the front and back is different. Therefore, the wafer will be greatly warped due to the difference between the front and back sides due to processing damage.
若以該正面為切片面且反面為研削面，對於大幅地翹曲的晶圓實行第二次的樹脂貼合加工，會成為與第一次的樹脂厚度分布顯著地不同的樹脂厚度分布。因此，第二次的樹脂貼合研削(依序為反面樹脂貼合、正面研削、反面研削)後的翹曲會惡化(惡化為原料晶圓翹曲的10倍以上)。If the front surface is used as the slicing surface and the back surface is used as the grinding surface, and a second resin bonding process is performed on a greatly warped wafer, the resin thickness distribution will be significantly different from the first resin thickness distribution. Therefore, the warpage after the second resin bonding grinding (reverse resin bonding, front surface grinding, and back surface grinding) will worsen (to more than 10 times the warpage of the raw wafer).
實施例中，翹曲、奈米形貌皆達到目標值。特別是，第一次加工製程中晶圓雙面都已加工為研削面，因此不會有起因於破壞的晶圓的翹曲，此外第二次藉由對與第一次不同的面進行樹脂貼合，而能夠抵銷由於樹脂貼合研削所造成的做工翹曲。In the embodiment, both warpage and nanomorphology reached the target values. In particular, in the first processing process, both sides of the wafer have been processed into grinding surfaces, so there will be no warpage of the wafer caused by damage. In addition, in the second processing process, resin is applied to a different surface from the first processing. It can offset the warpage of workmanship caused by resin bonding and grinding.
如同以上，可知根據本發明的實施例，當實施兩次「依序為樹脂貼合、對不具樹脂之面的單面研削、剝離樹脂、對曾貼有樹脂之面的單面研削」的步驟時，第二次對與第一次不同的面進行樹脂貼合，藉此即便在樹脂貼合條件(樹脂種類和樹脂滴下量、加壓負重、加壓速度、加壓負重分布等)偏差而樹脂厚度分布不均勻時，研削加工後的晶圓的翹曲(Warp)仍穩定。如此，能夠製作一種晶圓，其翹曲良好且奈米形貌(NT)也良好。As mentioned above, it can be seen that according to the embodiment of the present invention, when the steps of "resin bonding, single-sided grinding of the surface without resin, peeling off the resin, and single-sided grinding of the surface once attached with resin" are performed twice, By performing resin bonding on a different surface from the first time for the second time, even if the resin bonding conditions (resin type and resin dripping amount, pressurization load, pressurization speed, pressurization load distribution, etc.) vary, When the resin thickness distribution is uneven, the warp of the ground wafer remains stable. In this way, a wafer can be produced with good warpage and good nanotopography (NT).
本說明書包含以下的態樣。 [1] 一種研削晶圓的製造方法，其特徵在於，是將具有第一主面與第二主面之原料晶圓進行研削，來製造研削晶圓，該製造方法包含如下步驟： 第一樹脂貼合步驟，其對前述原料晶圓的前述第一主面實行樹脂貼合，來將第一樹脂層形成於前述第一主面； 對不具前述第一樹脂層之前述第二主面進行單面研削的步驟； 第一樹脂層去除步驟，其將前述第一樹脂層剝離； 對前述第一主面進行單面研削的步驟； 第二樹脂貼合步驟，其對前述第二主面實行樹脂貼合，來將第二樹脂層形成於前述第二主面； 對不具前述第二樹脂層之前述第一主面進行單面研削的步驟； 第二樹脂層去除步驟，其將前述第二樹脂層剝離；及， 對前述第二主面進行單面研削的步驟。 [2] 如上述[1]所述之研削晶圓的製造方法，其中，使用將晶棒進行切片後的晶圓作為前述原料晶圓。 [3] 如上述[1]或上述[2]所述之研削晶圓的製造方法，其中，當要實行前述第一樹脂貼合步驟及前述第二樹脂貼合步驟時，是在前述第一主面及前述第二主面的面狀態呈相同的加工步驟後的狀態下實行。 [4] 一種晶圓的製造方法，其特徵在於，在對具有第一主面與第二主面之原料晶圓實施複數次相同的加工步驟的晶圓的製造方法中，將要實行前述加工步驟時的前述第一主面及前述第二主面的面狀態作成相同的加工步驟後的狀態，然後在第奇數次的前述加工步驟與第偶數次的前述加工步驟中，替換前述原料晶圓的前述第一主面與前述第二主面來實行加工。 [5] 如上述[4]所述之晶圓的製造方法，其中，前述加工步驟是如下步驟：對前述原料晶圓的前述第一主面實行樹脂貼合，對前述第二主面進行單面研削後，將樹脂剝離來對前述第一主面進行單面研削。 This manual contains the following aspects. [1] A method of manufacturing a ground wafer, characterized in that a raw material wafer having a first main surface and a second main surface is ground to produce a ground wafer. The manufacturing method includes the following steps: A first resin bonding step, which performs resin bonding on the first main surface of the raw material wafer to form a first resin layer on the first main surface; The step of performing single-sided grinding on the second main surface without the first resin layer; A first resin layer removal step, which peels off the aforementioned first resin layer; The step of performing single-sided grinding on the aforementioned first main surface; a second resin bonding step, which performs resin bonding on the second main surface to form a second resin layer on the second main surface; The step of performing single-sided grinding on the first main surface without the aforementioned second resin layer; A second resin layer removal step, which peels off the aforementioned second resin layer; and, The step of performing single-sided grinding on the aforementioned second main surface. [2] The method of manufacturing a ground wafer according to the above [1], wherein a wafer obtained by slicing a crystal rod is used as the raw material wafer. [3] The manufacturing method of grinding wafers as described in the above [1] or the above [2], wherein when the above-mentioned first resin bonding step and the above-mentioned second resin bonding step are to be carried out, it is during the above-mentioned first resin bonding step. The main surface and the second main surface are in the same surface condition after the same processing step. [4] A method of manufacturing a wafer, characterized in that in the method of manufacturing a wafer in which a raw material wafer having a first main surface and a second main surface is subjected to a plurality of identical processing steps, the aforementioned processing steps are performed The surface conditions of the first main surface and the second main surface are made into the same state after the processing steps, and then in the odd-numbered processing steps and the even-numbered processing steps, the surface conditions of the raw material wafer are replaced. Processing is performed on the aforementioned first principal surface and the aforementioned second principal surface. [5] The wafer manufacturing method according to the above [4], wherein the processing step is the following step: performing resin bonding on the first main surface of the raw material wafer, and performing a single step on the second main surface. After the surface grinding, the resin is peeled off and the first main surface is ground single-sided.
再者，本發明並未限定於上述實施形態。上述實施形態為例示，具有與本發明的申請專利範圍所記載的技術思想實質地相同的構成而能發揮相同的作用效果者，全部都包含在本發明的技術範圍內。In addition, the present invention is not limited to the above-mentioned embodiment. The above-mentioned embodiments are only examples, and all those having substantially the same structure as the technical ideas described in the claimed scope of the present invention and producing the same functions and effects are included in the technical scope of the present invention.
1:下平台 2:光穿透性膜 3:樹脂層 4:研削砂輪 5:夾頭座 S1:第一主面 S2:第二主面 W:原料晶圓 1: Get off the platform 2:Light-transmissive film 3: Resin layer 4: Grinding wheel 5:Chuck seat S1: First main surface S2: Second main surface W: Raw wafer
第1圖是顯示本發明的研削晶圓的製造方法的一例。 第2圖顯示專利文獻1所記載的以往例的研削晶圓的製造方法並且是說明利用樹脂貼合形成的樹脂層的厚度分布呈均勻的情況的圖式。 第3圖顯示專利文獻1所記載的以往例及比較例2的研削晶圓的製造方法並且是說明利用樹脂貼合形成的樹脂層的厚度分布呈不均勻的情況的圖式。 第4圖顯示專利文獻3所記載的以往例及比較例3的研削晶圓的製造方法並且是說明利用樹脂貼合形成的樹脂層的厚度分布呈不均勻的情況的圖式。 第5圖顯示專利文獻4所記載的以往例及比較例4的研削晶圓的製造方法。 FIG. 1 shows an example of the manufacturing method of the ground wafer of the present invention. FIG. 2 shows a conventional example of a ground wafer manufacturing method described in Patent Document 1, and is a diagram illustrating a case where the thickness distribution of the resin layer formed by resin bonding is uniform. FIG. 3 shows the manufacturing method of the ground wafer of the conventional example and the comparative example 2 described in patent document 1, and is a figure explaining the case where the thickness distribution of the resin layer formed by resin bonding becomes non-uniform. FIG. 4 shows the manufacturing method of the ground wafer of the conventional example and the comparative example 3 described in Patent Document 3, and is a diagram explaining the case where the thickness distribution of the resin layer formed by resin bonding becomes uneven. FIG. 5 shows the manufacturing method of the ground wafer according to the conventional example and Comparative Example 4 described in Patent Document 4.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without
1:下平台 1: Get off the platform
2:光穿透性膜 2:Light-transmissive film
3:樹脂層 3: Resin layer
4:研削砂輪 4: Grinding wheel
5:夾頭座 5:Chuck seat
S1:第一主面 S1: First main surface
S2:第二主面 S2: Second main surface
W:原料晶圓 W: Raw wafer
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