JP2023172169A - Method for manufacturing grinding wafer, and method for manufacturing wafer - Google Patents
Method for manufacturing grinding wafer, and method for manufacturing wafer Download PDFInfo
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- 238000000227 grinding Methods 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 108
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 62
- 239000011347 resin Substances 0.000 claims abstract description 247
- 229920005989 resin Polymers 0.000 claims abstract description 247
- 239000002994 raw material Substances 0.000 claims abstract description 35
- 238000012545 processing Methods 0.000 claims description 68
- 238000012876 topography Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 152
- 238000009826 distribution Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 15
- 238000000576 coating method Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 238000001723 curing Methods 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
Description
本発明は、研削ウェーハの製造方法及びウェーハの製造方法に関する。 The present invention relates to a method for manufacturing a ground wafer and a method for manufacturing a wafer.
従来、半導体ウェーハは、微細なパターンを写真製版により作製するために、ウェーハの表面の平坦化が求められていた。特にナノトポグラフィーと呼ばれる表面うねりを低減することで半導体ウェーハの平坦度を向上させるための技術が提案されている。 Conventionally, semiconductor wafers have been required to have a flat surface in order to produce fine patterns by photolithography. In particular, a technique called nanotopography has been proposed for improving the flatness of semiconductor wafers by reducing surface waviness.
このようなウェーハの平坦化加工方法として、例えば特許文献１には、インゴットからスライスされたウェーハの一の面の面全面を樹脂で覆う樹脂塗布工程と、ウェーハの一の面を保持し、ウェーハの二の面を研削した後、ウェーハの二の面を保持し、ウェーハの一の面を研削する工程とを含む加工プロセス（図２参照）が開示されている。
As a planarization processing method for such a wafer, for example,
また、例えば特許文献２には、インゴットからスライスされたウェーハの一の面を保持し、ウェーハの二の面を研削した後、ウェーハの二の面を保持し、ウェーハの一の面を研削する一次研削工程と、一次研削工程に続いてウェーハの二の面全面を樹脂で覆う樹脂塗布工程と、この樹脂塗布工程に続いてウェーハの二の面を基準面として保持し、ウェーハの一の面を研削し、樹脂を取り除いた後にウェーハの一の面を基準面としてウェーハの二の面を研削する工程とを含む加工プロセスが開示されている。
Further, for example,
スライス工程において、切断後のウェーハ表面に発生するうねりが大きい場合、ナノトポグラフィーが悪化する問題があった。 In the slicing process, if large undulations occur on the wafer surface after cutting, there is a problem that nanotopography deteriorates.
対策として、特許文献３にあるように、ウェーハの片面に樹脂を被覆して研削する加工方法で、樹脂貼り→研削を２回繰り返すことで改善する技術が提案されている。
As a countermeasure, as disclosed in
特許文献１に示される従来方法では、樹脂貼り条件（樹脂種類や樹脂滴下量、プレス荷重、プレス速度、プレス荷重分布等）が適切でない場合、樹脂厚さ分布が不均一になり、研削加工後のウェーハの反り（Ｗａｒｐ）が悪化する問題があった（図３参照）。
In the conventional method shown in
特に、特許文献３の技術では、同じ面に樹脂貼りを行っているため、樹脂厚さ分布が不均一である場合、Ｗａｒｐを悪化させてしまうという問題があった（図４参照）。
In particular, in the technique of
また、上記樹脂貼り研削を２回連続で繰り返すことで、さらにうねりの少ないウェーハを作製する技術（例えば特許文献４）もある。この文献では、樹脂貼り→表面研削→樹脂貼り→裏面研削→表面研削が示されている。しかし、１回目の樹脂貼り研削後は加工ダメージの表裏差に起因してウェーハが大きく反るため、樹脂貼り２回目の樹脂厚さ分布は不均一となりやすく、このため、最終的な研削後Ｗａｒｐは悪化してしまうことが分かった（図５参照）。 There is also a technique (for example, Patent Document 4) in which a wafer with even less waviness is produced by repeating the resin bonding and grinding twice in succession. This document describes the following steps: resin pasting → surface grinding → resin pasting → back surface grinding → surface grinding. However, after the first resin bonding and grinding, the wafer is significantly warped due to the difference in processing damage between the front and back sides, so the resin thickness distribution in the second resin bonding tends to be uneven, and for this reason, after the final grinding, the wafer is warped significantly. It was found that the condition worsened (see Figure 5).
研削ウェーハや鏡面研磨ウェーハは、ナノトポグラフィーが良好であることだけでなく、Ｗａｒｐに代表される長波長のうねりも良好であることが好ましい。 It is preferable that ground wafers and mirror-polished wafers not only have good nanotopography but also good long-wavelength waviness as represented by Warp.
本発明は、上記問題を解決するためになされたものであり、半導体ウェーハの加工プロセス、特に、原料ウェーハの表面を高平坦化する加工プロセスに関し、ナノトポグラフィー及びＷａｒｐレベルを同時に良好にするための研削ウェーハの製造方法、並びに、平坦度等の品質に優れたウェーハを製造することが可能なウェーハの製造方法を提供することを目的とする。 The present invention was made in order to solve the above problems, and relates to a processing process for semiconductor wafers, particularly a processing process for highly flattening the surface of a raw material wafer, in order to simultaneously improve nanotopography and warp level. An object of the present invention is to provide a method for manufacturing a ground wafer, and a method for manufacturing a wafer that can manufacture a wafer with excellent quality such as flatness.
本発明は、上記目的を達成するためになされたものであり、第１主面と第２主面とを有する原料ウェーハを研削して研削ウェーハを製造する研削ウェーハの製造方法であって、前記原料ウェーハの前記第１主面に樹脂貼りを行い、前記第１主面に第１樹脂層を形成する第１樹脂貼り工程と、前記第１樹脂層の無い前記第２主面を片面研削する工程と、前記第１樹脂層を剥離する第１樹脂層除去工程と、前記第１主面を片面研削する工程と、前記第２主面に樹脂貼りを行い、前記第２主面に第２樹脂層を形成する第２樹脂貼り工程と、前記第２樹脂層の無い前記第１主面を片面研削する工程と、前記第２樹脂層を剥離する第２樹脂層除去工程と、前記第２主面を片面研削する工程とを含む研削ウェーハの製造方法を提供する。 The present invention has been made to achieve the above object, and is a method for manufacturing a ground wafer, which comprises manufacturing a ground wafer by grinding a raw material wafer having a first main surface and a second main surface. A first resin bonding step of applying resin to the first main surface of the raw material wafer and forming a first resin layer on the first main surface, and single-sided grinding of the second main surface without the first resin layer. a first resin layer removing step of peeling off the first resin layer; a step of single-sided grinding the first main surface; applying a resin to the second main surface; and applying a second resin layer to the second main surface. a second resin pasting step of forming a resin layer; a step of single-sided grinding of the first principal surface without the second resin layer; a second resin layer removing step of peeling off the second resin layer; Provided is a method for manufacturing a ground wafer, which includes a step of single-sided grinding the main surface.
このような研削ウェーハの製造方法によれば、ナノトポグラフィー及びＷａｒｐレベルを同時に良好にすることができる。 According to such a method of manufacturing a ground wafer, it is possible to improve the nanotopography and the warp level at the same time.
このとき、前記原料ウェーハとしてインゴットをスライスした後のウェーハを用いる研削ウェーハの製造方法とすることができる。 At this time, the method for producing a ground wafer may use a wafer obtained by slicing an ingot as the raw material wafer.
本発明に係る研削ウェーハの製造方法は、特にこのような原料ウェーハを用いる場合に好適である。 The method for manufacturing a ground wafer according to the present invention is particularly suitable when such a raw material wafer is used.
このとき、前記第１樹脂貼り工程及び前記第２樹脂貼り工程を行う際には、前記第１主面及び前記第２主面の面状態が、同一の加工工程後の状態で行う研削ウェーハの製造方法とすることができる。 At this time, when performing the first resin bonding step and the second resin bonding step, the surface states of the first main surface and the second main surface are the same as those of the ground wafer after the processing step. It can be a manufacturing method.
これにより、より効果的にナノトポグラフィー及びＷａｒｐレベルを同時に良好にすることができる。 Thereby, it is possible to more effectively improve the nanotopography and the warp level at the same time.
本発明は、また、第１主面と第２主面とを有する原料ウェーハに対して同じ加工工程を複数回実施するウェーハの製造方法において、前記加工工程を行う際の前記第１主面及び前記第２主面の面状態を同一の加工工程後の状態とし、奇数回目の前記加工工程と、偶数回目の前記加工工程で、前記原料ウェーハの前記第１主面と前記第２主面とを入れ替えて加工を行うウェーハの製造方法を提供する。 The present invention also provides a wafer manufacturing method in which the same processing step is performed multiple times on a raw material wafer having a first main surface and a second main surface. The surface state of the second main surface is the same state after the processing process, and the first main surface and the second main surface of the raw material wafer are changed in the odd-numbered processing steps and the even-numbered processing steps. Provided is a method for manufacturing a wafer in which processing is performed by exchanging the wafers.
このようなウェーハの製造方法によれば、平坦度等の品質に優れたウェーハを製造することができる。 According to such a wafer manufacturing method, a wafer with excellent quality such as flatness can be manufactured.
このとき、前記加工工程が、前記原料ウェーハの前記第１主面に樹脂貼りを行い、前記第２主面を片面研削し、その後樹脂を剥離し、前記第１主面を片面研削する工程であるウェーハの製造方法とすることができる。 At this time, the processing step is a step of applying a resin to the first main surface of the raw material wafer, grinding the second main surface on one side, then peeling off the resin, and grinding the first main surface on one side. A certain wafer manufacturing method can be used.
これにより、ナノトポグラフィー及びＷａｒｐレベルを同時に良好にすることができる。 This makes it possible to improve nanotopography and warp level at the same time.
以上のように、本発明の研削ウェーハの製造方法によれば、ナノトポグラフィー及びＷａｒｐレベルを同時に良好にすることが可能となる。また、本発明のウェーハの製造方法によれば、平坦度等の品質に優れたウェーハを製造することが可能となる。 As described above, according to the method for manufacturing a ground wafer of the present invention, it is possible to improve the nanotopography and the warp level at the same time. Furthermore, according to the wafer manufacturing method of the present invention, it is possible to manufacture wafers with excellent quality such as flatness.
以下、本発明を詳細に説明するが、本発明はこれらに限定されるものではない。 Hereinafter, the present invention will be explained in detail, but the present invention is not limited thereto.
上述のように、ナノトポグラフィー及びＷａｒｐレベルを同時に良好にするための研削ウェーハの製造方法、並びに、平坦度等の品質に優れたウェーハを製造することが可能なウェーハの製造方法が求められていた。 As mentioned above, there is a need for a method for manufacturing ground wafers that simultaneously improves nanotopography and warp level, and a method for manufacturing wafers that can manufacture wafers with excellent quality such as flatness. Ta.
本発明者らは、上記課題について鋭意検討を重ねた結果、第１主面と第２主面とを有する原料ウェーハを研削して研削ウェーハを製造する研削ウェーハの製造方法であって、前記原料ウェーハの前記第１主面に樹脂貼りを行い、前記第１主面に第１樹脂層を形成する第１樹脂貼り工程と、前記第１樹脂層の無い前記第２主面を片面研削する工程と、前記第１樹脂層を剥離する第１樹脂層除去工程と、前記第１主面を片面研削する工程と、前記第２主面に樹脂貼りを行い、前記第２主面に第２樹脂層を形成する第２樹脂貼り工程と、前記第２樹脂層の無い前記第１主面を片面研削する工程と、前記第２樹脂層を剥離する第２樹脂層除去工程と、前記第２主面を片面研削する工程とを含む研削ウェーハの製造方法により、ナノトポグラフィー及びＷａｒｐレベルを同時に良好にすることができることを見出し、本発明を完成した。 As a result of intensive studies on the above-mentioned problems, the present inventors have discovered a method for manufacturing a ground wafer, which manufactures a ground wafer by grinding a raw material wafer having a first main surface and a second main surface, the method comprising: A first resin applying step of applying resin to the first main surface of the wafer and forming a first resin layer on the first main surface, and a step of single-side grinding the second main surface without the first resin layer. a first resin layer removing step of peeling off the first resin layer; a step of single-sided grinding of the first main surface; applying a resin to the second main surface; and applying a second resin to the second main surface. a step of applying a second resin to form a layer; a step of single-sided grinding the first main surface without the second resin layer; a second resin layer removing step of peeling off the second resin layer; and a step of removing the second resin layer. The present invention has been completed based on the discovery that nanotopography and warp level can be improved at the same time by a method for manufacturing a ground wafer that includes a step of single-sided grinding.
本発明者らは、また、第１主面と第２主面とを有する原料ウェーハに対して同じ加工工程を複数回実施するウェーハの製造方法において、前記加工工程を行う際の前記第１主面及び前記第２主面の面状態を同一の加工工程後の状態とし、奇数回目の前記加工工程と、偶数回目の前記加工工程で、前記原料ウェーハの前記第１主面と前記第２主面とを入れ替えて加工を行うウェーハの製造方法により、平坦度等の品質に優れたウェーハを製造することができることを見出し、本発明を完成した。 The present inventors have also provided a method for manufacturing a wafer in which the same processing step is performed multiple times on a raw material wafer having a first main surface and a second main surface. The surface state of the surface and the second main surface are the same after the processing process, and the first main surface and the second main surface of the raw material wafer are changed in the odd-numbered processing steps and the even-numbered processing steps. The inventors have discovered that a wafer with excellent quality such as flatness can be manufactured by a wafer manufacturing method in which processing is performed by exchanging the surfaces, and the present invention has been completed.
以下、図面を参照して説明する。 This will be explained below with reference to the drawings.
本発明では、同じ加工工程を複数回（偶数回）実施するウェーハの製造方法において、奇数回目の加工工程では一方の面を主面として扱い加工し、偶数回目の加工工程では、他方の面を主面として扱い加工することで加工による反りの作り込みをキャンセルできることを見出した。すなわち、本発明に係るウェーハの製造方法は、第１主面と第２主面とを有する原料ウェーハに対して同じ加工工程を複数回実施するウェーハの製造方法において、加工工程を行う際の前記第１主面及び前記第２主面の面状態を同一の加工工程後の状態とし、奇数回目の加工工程と、偶数回目の加工工程で、原料ウェーハの第１主面と第２主面とを入れ替えて加工を行うウェーハの製造方法である。これにより、平坦度等の品質に優れたウェーハを製造することが可能となる。この加工工程は、例えば、研削工程、ラッピング工程、ＤＳＰ（両面研磨）工程、研磨工程などで、同じ工程を複数回繰り返す場合に効果的である。 In the present invention, in a wafer manufacturing method in which the same processing step is performed multiple times (an even number of times), one surface is treated as the main surface in the odd numbered processing steps, and the other surface is processed in the even numbered processing steps. It has been found that by processing it as a main surface, it is possible to cancel the warpage caused by processing. That is, the wafer manufacturing method according to the present invention is a wafer manufacturing method in which the same processing step is performed multiple times on a raw material wafer having a first main surface and a second main surface. The surface states of the first main surface and the second main surface are the same after the processing process, and the first main surface and the second main surface of the raw material wafer are This is a wafer manufacturing method in which processing is performed by exchanging the wafers. This makes it possible to manufacture wafers with excellent quality such as flatness. This processing process is effective when repeating the same process multiple times, such as a grinding process, a lapping process, a DSP (double-sided polishing) process, and a polishing process.
特に本発明に係るウェーハの製造方法では、上記加工工程が、原料ウェーハの第１主面に樹脂貼りを行い、第２主面を片面研削し、その後樹脂を剥離し、第１主面を片面研削する工程であることが好ましい。 In particular, in the wafer manufacturing method according to the present invention, the processing steps include applying a resin to the first main surface of the raw material wafer, grinding the second main surface on one side, and then peeling off the resin. Preferably, the step is grinding.
より具体的には、本発明は、第１主面と第２主面とを有する原料ウェーハを研削して研削ウェーハを製造する研削ウェーハの製造方法であって、原料ウェーハの第１主面に樹脂貼りを行い、第１主面に第１樹脂層を形成する第１樹脂貼り工程と、第１樹脂層の無い第２主面を片面研削する工程と、第１樹脂層を剥離する第１樹脂層除去工程と、第１主面を片面研削する工程と、第２主面に樹脂貼りを行い、第２主面に第２樹脂層を形成する第２樹脂貼り工程と、第２樹脂層の無い第１主面を片面研削する工程と、第２樹脂層を剥離する第２樹脂層除去工程と、第２主面を片面研削する工程とを含む研削ウェーハの製造方法を提供する。 More specifically, the present invention provides a method for manufacturing a ground wafer, which manufactures a ground wafer by grinding a raw material wafer having a first main surface and a second main surface, the method comprising: A first resin applying step of applying resin and forming a first resin layer on the first main surface, a step of single-sided grinding of the second main surface without the first resin layer, and a first step of peeling off the first resin layer. A resin layer removing step, a step of single-sided grinding the first main surface, a second resin applying step of applying resin to the second main surface and forming a second resin layer on the second main surface, and a second resin layer. Provided is a method for manufacturing a ground wafer, which includes the steps of single-side grinding a first main surface free of grains, a second resin layer removal step of peeling off a second resin layer, and one-side grinding of a second main surface.
例えば、「表面樹脂貼り→裏面研削→表面研削の加工」を２回繰り返す場合、「表面樹脂貼り→裏面研削→表面研削の加工後に、ウェーハを反転させて、裏面樹脂貼り→表面研削→裏面研削の加工」を行う。これにより、樹脂貼り加工による反りの作り込みをキャンセルできることを見出した。 For example, if you want to repeat the process of "Front surface resin pasting → back surface grinding → front surface grinding" twice, after the "front surface resin pasting → back surface grinding → front surface grinding process," turn the wafer over and perform the back surface resin pasting → front surface grinding → back surface grinding. Processing. It has been found that this makes it possible to cancel the warpage caused by the resin bonding process.
なお、表面、裏面の表記は単に面の違いを示しており、第１主面、第２主面という表現で区別することができる。上記工程が、「裏面樹脂貼り→表面研削→裏面研削の加工後に、ウェーハを反転させて、表面樹脂貼り→裏面研削→表面研削」の加工でも同様である。どちらの面にデバイスを形成するか及びその後の工程でウェーハ反転などを行うかにより、加工初めの面（樹脂貼する面）を設定すれば良い。 Note that the expressions "front surface" and "back surface" simply indicate the difference in surface, and they can be distinguished by the expressions "first principal surface" and "second principal surface." The above process is the same even if the process is ``resin bonding on the back surface→surface grinding→back surface grinding, then the wafer is reversed, and the process is ``resin bonding on the front surface→back surface grinding→surface grinding''. The surface to start processing (the surface to which resin is applied) may be set depending on which surface the device will be formed on and whether the wafer will be reversed in the subsequent process.
本発明では、例えば、ウェーハの表面を第１主面、ウェーハの裏面を第２主面とした場合に、奇数回目の加工では、第１主面又は第２主面を主面として扱い加工し、偶数回目の加工では、奇数回目とは反対の面（第２主面又は第１主面）を主面として扱い加工することで、加工方法による反りやうねりの作り込みを打ち消すことができる。 In the present invention, for example, when the front surface of the wafer is the first principal surface and the back surface of the wafer is the second principal surface, in the odd-numbered processing, the first principal surface or the second principal surface is treated as the principal surface. In the even-numbered machining, the surface opposite to the odd-numbered machining (the second principal surface or the first principal surface) is treated as the principal surface, thereby canceling out warpage and undulation caused by the machining method.
より具体的には図１に示すように、原料ウェーハＷの第１主面Ｓ１に第１樹脂層を形成する第１樹脂貼り工程→樹脂の無い第２主面Ｓ２を片面研削する工程→第１樹脂層を除去（剥離）する第１樹脂層除去工程→樹脂（第１樹脂層）が貼ってあった第１主面Ｓ１を片面研削する工程の後、１回目とは異なる面である第２主面Ｓ２に樹脂貼りをする第２樹脂貼り工程→樹脂の無い第１主面Ｓ１を片面研削する工程→第２樹脂層を除去（剥離）する第２樹脂層除去工程→樹脂（第２樹脂層）が貼ってあった第２主面Ｓ２を片面研削する工程を行えば、樹脂貼りなどによる加工のばらつきが相殺され、ナノトポグラフィーが良好であることだけでなく、Ｗａｒｐに代表される長波長のうねりも良好なウェーハが加工可能となる。 More specifically, as shown in FIG. 1, a first resin bonding step of forming a first resin layer on the first main surface S1 of the raw material wafer W→a step of single-sided grinding of the second main surface S2 without resin→a first step. 1st resin layer removal step of removing (peeling off) one resin layer → After the step of single-sided grinding of the first main surface S1 on which the resin (first resin layer) was attached, the first resin layer is removed, which is a different surface from the first one. A second resin application step of applying resin to the second main surface S2 → a step of single-sided grinding of the first main surface S1 without resin → a second resin layer removal step of removing (peeling) the second resin layer → a resin (second By carrying out the process of single-sided grinding of the second main surface S2 to which the resin layer (resin layer) was attached, the variations in processing due to resin attachment etc. are offset, and not only the nanotopography is good but also Wafers with good long-wavelength waviness can be processed.
このように「樹脂貼り→樹脂の無い面を片面研削→樹脂を除去（剥離）後、樹脂が貼ってあった面を片面研削」する一連の工程を２回実施する際に、２回目（偶数回目）は１回目（奇数回目）とは異なる面に樹脂貼りをすることで、樹脂貼り条件（樹脂種類や樹脂滴下量、プレス荷重、プレス速度、プレス荷重分布等）がばらつき、樹脂厚さ分布が不均一になった場合でも、研削加工後のウェーハの反り（Ｗａｒｐ）が安定することが分かった。このように同じ加工プロセスを繰り返す場合に効果がある。 In this way, when carrying out the series of processes twice, such as "resin application → single-sided grinding of the surface without resin → after removing (peeling off) the resin, single-side grinding of the surface on which resin was applied", the second (even-numbered) By applying resin on a different surface than the first time (odd-numbered time), the resin application conditions (resin type, amount of resin dripped, press load, press speed, press load distribution, etc.) will vary, resulting in resin thickness distribution. It was found that even when the wafer becomes non-uniform, the warp of the wafer after grinding is stable. It is effective when repeating the same processing process in this way.
特に、樹脂貼りする際には、第１主面Ｓ１及び第２主面Ｓ２の面状態を揃えておくことが好ましい。例えば、１回目は樹脂貼りする際に、第１主面及び第２主面ともスライス面、２回目は、樹脂貼りする際に、第１主面及び第２主面とも研削面などにする。表裏のダメージ差などをなくした状態で樹脂貼りすることが好ましい。 In particular, when applying resin, it is preferable to align the surface conditions of the first principal surface S1 and the second principal surface S2. For example, the first main surface and the second main surface are both sliced surfaces when applying the resin the first time, and the first main surface and the second main surface are both ground surfaces when the resin is applied the second time. It is preferable to apply the resin with no difference in damage between the front and back surfaces.
つまり、スライス後のウェーハを加工する場合、１回目の「両面スライス面状態での樹脂貼り→樹脂の無い面を片面研削→樹脂を剥離後、樹脂が貼ってあった面を片面研削」することにより両面とも研削面にしておくことで、２回目は「両面研削面状態での樹脂貼り→樹脂の無い面を片面研削→樹脂を剥離後、樹脂が貼ってあった面を片面研削」する。これにより「両面スライス面状態での樹脂貼り→表面研削→一方がスライス面、他方が研削面の面状態での樹脂貼り→裏面研削→表面研削」と２回連続で樹脂貼りを行った時に生じる面状態の違いによる加工ダメージの表裏差に起因したウェーハの反りが発生することなく、樹脂貼り２回目の樹脂厚さ分布も安定しやすく最終的な研削後Ｗａｒｐは良好となる。 In other words, when processing a wafer after slicing, the first step is to "stick resin on both sides of the sliced surface → grind one side of the side without resin → after peeling off the resin, grind one side of the side where resin was pasted". By making both sides a ground surface, the second time is ``applying resin with both sides ground, grinding one side of the surface without resin, and then grinding one side of the surface with resin after peeling off the resin.'' This occurs when resin is applied twice in a row: ``Resin application with both sliced surfaces → surface grinding → resin application with one side as the sliced surface and the other as the ground surface → back surface grinding → surface grinding'' Warpage of the wafer due to differences in processing damage on the front and back surfaces due to differences in surface condition does not occur, and the resin thickness distribution in the second resin bonding process is easily stabilized, resulting in good warp after final grinding.
樹脂貼り方法及び条件としては、特に限定するものではないが、例えば、下記のようなステップで実施される。 The method and conditions for applying the resin are not particularly limited, but, for example, the following steps are performed.
（樹脂貼り工程）
図１を参照しながら説明する。初めに平坦な面を有する下定盤１を準備する。この下定盤１上に、例えば紫外光に透明な光透過性フィルム２を敷く。次いで、光透過性フィルム２上に、樹脂層（平坦化樹脂層ともいう）の前駆体である、可塑状態、例えば液状の樹脂を供給し、塗布する。樹脂としてＵＶ硬化性樹脂を用いている。ただし、樹脂の材料は特に限定されない。
(Resin pasting process)
This will be explained with reference to FIG. First, a
次に、原料ウェーハＷの第２主面Ｓ２を上定盤（不図示）に吸着保持させる。そして、この状態の原料ウェーハＷを、第１主面Ｓ１が樹脂に接するようにこの樹脂上に載せる。これにより、ウェーハの第１主面Ｓ１上に、樹脂層の前駆体である樹脂が塗布される。 Next, the second main surface S2 of the raw material wafer W is held by suction on an upper surface plate (not shown). Then, the raw material wafer W in this state is placed on the resin so that the first principal surface S1 is in contact with the resin. As a result, resin, which is a precursor of the resin layer, is applied onto the first main surface S1 of the wafer.
次いで、樹脂の面が平坦となるように上定盤を用いて、所定荷重で押圧する。この際の押圧を調整することにより、樹脂の厚さのばらつきを調整することができる。適切な押圧をすることにより、樹脂を適切に押し広げることができ、適切な樹脂厚さ分布を有する樹脂層を得ることができる。 Next, the resin is pressed with a predetermined load using an upper surface plate so that the surface of the resin becomes flat. By adjusting the pressing force at this time, variations in resin thickness can be adjusted. By applying appropriate pressure, the resin can be appropriately spread and a resin layer having an appropriate resin thickness distribution can be obtained.
次に、樹脂を硬化させる。硬化させる方法は特に限定されないが、例えば、図１に示されるように光を透過可能な下定盤側からＵＶ光を照射し、樹脂を硬化させることができる。また、上定盤及び下定盤から、樹脂層及び光透過性フィルム２が取り付けられたウェーハを取り外し、取り外したウェーハに対し、光透過性フィルム側からＵＶ光を照射し、樹脂を硬化させることができる。なお、樹脂の硬化処理は、樹脂の材料に応じて変更する。光硬化処理を行わない場合は、光透過性フィルムの敷設を省略することができる。この硬化処理により、樹脂層３付きのウェーハが得られる。
Next, the resin is cured. Although the method of curing is not particularly limited, for example, as shown in FIG. 1, the resin can be cured by irradiating UV light from the lower surface plate side through which light can pass. Furthermore, the wafer to which the resin layer and the light-transmitting
（片面研削工程）
次に、表裏面加工が実施される。つまり、以上のようにして得られた樹脂層３付きウェーハを、樹脂層３の平坦面を基準面として、研削装置のチャックテーブル５に吸着保持させる。このチャックテーブル５は、例えば多孔質セラミック製であり、ウェーハを真空吸着して保持することができる。また、チャックテーブル５は、研削手段に対するウェーハの軸角度を調整する機能が備わっている。ただし、本発明において、ウェーハ を吸着保持する手段は、特に限定されない。
(Single-sided grinding process)
Next, front and back surface processing is performed. That is, the wafer with the
なお、光透過性フィルムがチャックテーブル５に接しているが、光透過性フィルムは、ウェーハ及び樹脂層の厚さに比べて小さな厚さを有しており、吸着保持を阻害することはない。 Note that although the light-transmitting film is in contact with the chuck table 5, the light-transmitting film has a smaller thickness than the thickness of the wafer and the resin layer, and does not interfere with suction and holding.
次に、吸着保持された状態のウェーハの第２主面Ｓ２を、第一加工として、研削する。研削ホイール４を用いて研削する例を示すが、研削する手段は特に限定されない。
Next, the second main surface S2 of the wafer, which is held by suction, is ground as a first process. Although an example of grinding using the
（樹脂層除去工程）
次に、第一加工したウェーハＷをチャックテーブル５から解放する。次いで、ウェーハから、樹脂層３及び光透過性フィルム２を除去する。これにより、片面が加工されたウェーハが得られる。得られたウェーハは、第一加工した第２主面Ｓ２、及び第２主面と反対側の第１主面Ｓ１を有する。
(Resin layer removal process)
Next, the first processed wafer W is released from the chuck table 5. Next, the
（片面研削工程）
次に、先に得られたウェーハを、第１主面Ｓ１が上向きになるように反転させ、第一加工した第２主面Ｓ２をチャックテーブル５に吸着保持させる。この吸着で、ウェーハは弾性変形する。この際、第一加工した第２主面Ｓ２も、弾性変形して、チャックテーブル５の表面に追随した第２主面Ｓ２となる。一方、第１主面Ｓ１は、弾性変形して下方に変位し、第１主面Ｓ１となる。
(Single-sided grinding process)
Next, the previously obtained wafer is turned over so that the first main surface S1 faces upward, and the second main surface S2, which has undergone the first processing, is held by suction on the chuck table 5. This adsorption causes the wafer to be elastically deformed. At this time, the first processed second main surface S2 is also elastically deformed to become a second main surface S2 that follows the surface of the chuck table 5. On the other hand, the first main surface S1 is elastically deformed and displaced downward to become the first main surface S1.
次に、このようにして吸着保持した状態のウェーハの第１主面Ｓ１を、第二加工として、研削する。研削手段として研削ホイール４を用いて、第１主面Ｓ１を研削する。
Next, the first main surface S1 of the wafer, which has been suctioned and held in this manner, is ground as a second process. The first principal surface S1 is ground using the
以上、樹脂貼り工程から研削工程までを一連の加工プロセスとし、本発明ではこの加工プロセスを複数回（偶数回）実施する。その際、奇数回目の加工プロセスと偶数回目の加工プロセスでは、主面とする面を異なる面とする。 As described above, the process from the resin pasting process to the grinding process is a series of processing processes, and in the present invention, this processing process is performed multiple times (an even number of times). In this case, the main surface is different in the odd-numbered machining process and the even-numbered machining process.
つまり、上記の樹脂貼りは第１主面Ｓ１に対して実施しているが、初め（奇数回目）の加工プロセスで第１主面Ｓ１に樹脂貼りを実施した場合、２回目（偶数回目）の加工プロセスでは第２主面Ｓ２に樹脂貼りを実施する。このように同じプロセスを繰り返す場合に扱う面を逆にすることで加工プロセスによる反りの作り込みをキャンセルできる。 In other words, the above resin application is performed on the first main surface S1, but if resin application is performed on the first main surface S1 in the first (odd numbered) processing process, then the second (even numbered) processing process In the processing process, resin is applied to the second main surface S2. In this way, when repeating the same process, by reversing the surfaces to be treated, it is possible to cancel the warpage caused by the processing process.
以下、実施例を挙げて本発明について具体的に説明するが、これは本発明を限定するものではない。 EXAMPLES Hereinafter, the present invention will be specifically explained with reference to examples, but the present invention is not limited thereto.
［実験内容］
（樹脂貼り加工条件）
原料ウェーハとしては、スライス後に面取り加工した直径３００ｍｍのＰ型Ｓｉ単結晶ウェーハを用いた。被覆物としてＵＶ硬化性樹脂、上記フィルムとしてＰＥＴフィルムを用いた。平坦なガラス定盤（下定盤）にＰＥＴフィルムを敷き、そのＰＥＴフィルム上にＵＶ硬化性樹脂を１０ｍｌ滴下した。
[Experiment details]
(Resin pasting processing conditions)
As the raw material wafer, a P-type Si single crystal wafer with a diameter of 300 mm that was chamfered after slicing was used. A UV curable resin was used as the coating, and a PET film was used as the film. A PET film was placed on a flat glass surface plate (lower surface plate), and 10 ml of UV curable resin was dropped onto the PET film.
ウェーハをセラミック定盤（上定盤）に吸着保持し、上記樹脂に押し当てて接着した。押圧制御は、セラミック定盤を保持するサーボモータで駆動させ、所定荷重を検出するまで加圧した。樹脂硬化用の光源としては波長３６５ｎｍのＵＶ－ＬＥＤを用いた。 The wafer was held by suction on a ceramic surface plate (upper surface plate), and was pressed against and bonded to the resin. Pressure control was performed by driving a servo motor that held the ceramic surface plate, and applying pressure until a predetermined load was detected. A UV-LED with a wavelength of 365 nm was used as a light source for curing the resin.
（研削加工条件）
研削加工には、研削ホイールとしてダイヤ砥粒が結合されたものを用いた。被覆物側を真空吸着し、研削加工を行った。チャックテーブルの軸角度を調整することで、ウェーハ厚さばらつきが１μｍ以下となるように調整を行った。
(Grinding processing conditions)
For the grinding process, a grinding wheel combined with diamond abrasive grains was used. The coated material side was vacuum-adsorbed and ground. The wafer thickness variation was adjusted to 1 μm or less by adjusting the axis angle of the chuck table.
比較例１は、樹脂貼りなしで、裏面研削及び表面研削を実施した。研削加工は、上記加工条件の通りである。 In Comparative Example 1, back surface grinding and surface grinding were performed without applying resin. The grinding process was performed under the above processing conditions.
比較例２は図３に示すように、「表面樹脂貼り→裏面研削→表面研削」として樹脂貼り研削を１回のみ実施した。なお、裏面研削後に樹脂を剥離した後、表面研削を実施した。樹脂貼り加工及び研削加工は、上記加工条件の通りである。 In Comparative Example 2, as shown in FIG. 3, resin bonding and grinding was performed only once as "front surface resin bonding→back surface grinding→surface grinding". Note that after the resin was peeled off after back grinding, surface grinding was performed. The resin pasting process and the grinding process were performed under the above processing conditions.
比較例３は図４に示すように、「表面樹脂貼り→裏面研削→表面研削→表面樹脂貼り→裏面研削→表面研削」として、同じ工程を２回繰り返し実施した。なお、２回とも裏面研削後は樹脂を剥離した後、表面研削を行った（同じ面に樹脂貼りを実施）。樹脂貼り加工及び研削加工は、上記加工条件の通りである。 In Comparative Example 3, as shown in FIG. 4, the same process was repeated twice as follows: "Resin application on the front surface → Grinding on the back surface → Grinding on the surface → Resin application on the surface → Grinding on the back surface → Surface grinding." In both cases, after back grinding, the resin was peeled off, and then surface grinding was performed (resin was pasted on the same side). The resin pasting process and the grinding process were performed under the above processing conditions.
比較例４は図５に示すように、まずウェーハを反転させた後（この場合、最終研削面の裏面が上面（裏上）となる）、「表面樹脂貼り→裏面研削→裏面樹脂貼り→表面研削→裏面研削」として、樹脂貼り研削を連続して実施した。つまり、裏面研削後は樹脂を剥離した後、裏面樹脂貼りを行った。また、表面研削後は樹脂を剥離した後、裏面研削を実施した。樹脂貼り加工及び研削加工は、上記加工条件の通りである。 In Comparative Example 4, as shown in FIG. Grinding → backside grinding was performed continuously. That is, after grinding the back surface, the resin was peeled off and then the resin was pasted on the back surface. In addition, after surface grinding, the resin was peeled off, and then back surface grinding was performed. The resin pasting process and the grinding process were performed under the above processing conditions.
実施例は図１に示すように行った。まずウェーハを反転させた後（この場合、最終研削面の裏面が上面（裏上）となる）、「表面樹脂貼り→裏面研削→表面研削後、ウェーハを反転し裏面樹脂貼り→表面研削→裏面研削」として、同じ工程を２回繰り返しているが、２回目は１回目と異なる面に樹脂貼りした。樹脂貼り加工及び研削加工は、上記加工条件の通りである。 Examples were carried out as shown in FIG. First, after flipping the wafer (in this case, the back side of the final ground surface becomes the top surface (upper back side)), "Surface resin pasting → back side grinding → After front surface grinding, flip the wafer, back side resin pasting → front surface grinding → back side The same process was repeated twice as "grinding", but the second time the resin was applied to a different surface than the first time. The resin pasting process and the grinding process were performed under the above processing conditions.
なお、各比較例、実施例とも、その後の評価を行うため、得られたウェーハについて同条件にて両面研磨及び上面を片面研磨し鏡面研磨加工を行った。これらの鏡面研磨は一般的に行われる条件で実施した。 In both Comparative Examples and Examples, in order to perform subsequent evaluation, the obtained wafers were subjected to double-sided polishing and single-sided polishing of the upper surface to perform mirror polishing under the same conditions. These mirror polishings were performed under commonly used conditions.
（測定及び結果）
Ｗａｒｐ及びナノトポグラフィーの測定には、光学干渉式の平坦度・ナノトポグラフィー測定装置（ＫＬＡ社製：ＷａｆｅｒＳｉｇｈｔ２＋）を用いた。ナノトポグラフィーの指標としては、ＳＱＭＭ１０ｍｍ×１０ｍｍを使用した。実施例及び比較例で実施した工程と、評価結果を表１に示す。
(Measurement and results)
For the measurement of warp and nanotopography, an optical interference type flatness/nanotopography measurement device (WaferSight2+, manufactured by KLA) was used. As an index of nanotopography, SQMM 10 mm x 10 mm was used. Table 1 shows the steps carried out in Examples and Comparative Examples and the evaluation results.
比較例１では、Ｗａｒｐは目標値に達したが、樹脂貼りなしで研削を実施したため、ナノトポグラフィーが不良となった。 In Comparative Example 1, the Warp reached the target value, but the nanotopography was poor because the grinding was performed without applying the resin.
比較例２では、樹脂貼り研削によりナノトポグラフィーが改善したが、Ｗａｒｐが悪化した。これは、樹脂厚さ分布が不均一であったため、樹脂貼り研削により反りを作りこんだためである。 In Comparative Example 2, nanotopography improved by resin bonding and grinding, but Warp deteriorated. This is because the resin thickness distribution was non-uniform and warpage was created by resin bonding and grinding.
比較例３では、比較例２よりもナノトポグラフィーがより改善したが、Ｗａｒｐは悪化した。Ｗａｒｐがさらに悪化した原因は、樹脂厚さ分布が不均一な状態で、樹脂貼り研削を２回繰り返したことで、反りをさらに作りこんだためである。 In Comparative Example 3, the nanotopography was more improved than in Comparative Example 2, but the Warp was worse. The cause of the further deterioration of the warp is that the resin bonding and grinding was repeated twice with the resin thickness distribution being non-uniform, thereby creating further warp.
比較例４では、比較例２よりもナノトポグラフィーがより改善したが、Ｗａｒｐは悪化した。 In Comparative Example 4, the nanotopography was more improved than in Comparative Example 2, but the Warp was worse.
１回目の樹脂貼り研削（表面樹脂貼り→裏面研削）後のウェーハの表面はスライス面、裏面は研削面であり、表裏面の加工ダメージが異なっている。このため、加工ダメージの表裏差起因で、ウェーハが大きく反った状態となる。 After the first resin bonding and grinding (front surface resin bonding → back surface grinding), the front surface of the wafer is a sliced surface, and the back surface is a ground surface, and the processing damage on the front and back surfaces is different. For this reason, the wafer becomes greatly warped due to the difference in processing damage between the front and back sides.
この表面がスライス面、裏面が研削面で、大きく反ったウェーハに対し２回目の樹脂貼り加工を行うと、１回目の樹脂厚さ分布とは著しく異なった樹脂厚さ分布となる。このため、２回目の樹脂貼り研削（裏面樹脂貼り→表面研削→裏面研削）後のＷａｒｐが悪化した（原料ウェーハのＷａｒｐの１０倍以上に悪化することがあった）。 When a second resin bonding process is performed on a highly warped wafer with the front surface being a sliced surface and the back surface being a ground surface, the resin thickness distribution will be significantly different from the resin thickness distribution of the first time. For this reason, the Warp after the second resin bonding and grinding (resin bonding on the back surface→surface grinding→back surface grinding) deteriorated (the Warp was sometimes 10 times or more worse than that of the raw material wafer).
実施例では、Ｗａｒｐ、ナノトポグラフィーともに目標値に達した。特に１回目の加工プロセスで、ウェーハ両面とも研削面に加工しているため、ダメージ起因のウェーハのソリはなく、また２回目は１回目とは異なる面に樹脂貼りをすることで、樹脂貼り研削によって作りこむ反りをキャンセルすることができた。 In the example, both Warp and nanotopography reached the target values. In particular, in the first processing process, both sides of the wafer are processed into ground surfaces, so there is no warping of the wafer due to damage, and in the second processing, resin is applied to a different surface than the first, so resin-based grinding is possible. I was able to cancel the warpage created by this.
以上のとおり、本発明の実施例によれば、「樹脂貼り→樹脂の無い面を片面研削→樹脂を剥離→樹脂が貼ってあった面を片面研削」する工程を２回実施する際に、２回目は１回目とは異なる面に樹脂貼りをすることで、樹脂貼り条件（樹脂種類や樹脂滴下量、プレス荷重、プレス速度、プレス荷重分布等）がばらつき樹脂厚さ分布が不均一になった場合でも、研削加工後のウェーハの反り（Ｗａｒｐ）が安定することが分かった。このように、Ｗａｒｐが良好でかつナノトポグラフィー（ＮＴ）も良好なウェーハを作製できる。 As described above, according to the embodiment of the present invention, when performing the process twice of "resin application → single-sided grinding of the surface without resin → peeling off the resin → single-sided grinding of the surface to which resin was applied", By applying the resin the second time on a different surface than the first time, the resin application conditions (resin type, amount of resin dripped, press load, press speed, press load distribution, etc.) will vary and the resin thickness distribution will become uneven. It was found that the warp of the wafer after grinding is stable even when the grinding process is performed. In this way, a wafer with good warp and good nanotopography (NT) can be manufactured.
本明細書は、以下の態様を包含する。
［１］： 第１主面と第２主面とを有する原料ウェーハを研削して研削ウェーハを製造する研削ウェーハの製造方法であって、
前記原料ウェーハの前記第１主面に樹脂貼りを行い、前記第１主面に第１樹脂層を形成する第１樹脂貼り工程と、
前記第１樹脂層の無い前記第２主面を片面研削する工程と、
前記第１樹脂層を剥離する第１樹脂層除去工程と、
前記第１主面を片面研削する工程と、
前記第２主面に樹脂貼りを行い、前記第２主面に第２樹脂層を形成する第２樹脂貼り工程と、
前記第２樹脂層の無い前記第１主面を片面研削する工程と、
前記第２樹脂層を剥離する第２樹脂層除去工程と、
前記第２主面を片面研削する工程とを含むことを特徴とする研削ウェーハの製造方法。
［２］：前記原料ウェーハとしてインゴットをスライスした後のウェーハを用いることを特徴とする上記［１］の研削ウェーハの製造方法。
［３］：前記第１樹脂貼り工程及び前記第２樹脂貼り工程を行う際には、前記第１主面及び前記第２主面の面状態が、同一の加工工程後の状態で行うことを特徴とする上記［１］又は上記［２］の研削ウェーハの製造方法。
［４］： 第１主面と第２主面とを有する原料ウェーハに対して同じ加工工程を複数回実施するウェーハの製造方法において、前記加工工程を行う際の前記第１主面及び前記第２主面の面状態を同一の加工工程後の状態とし、奇数回目の前記加工工程と、偶数回目の前記加工工程で、前記原料ウェーハの前記第１主面と前記第２主面とを入れ替えて加工を行うことを特徴とするウェーハの製造方法。
［５］：前記加工工程が、前記原料ウェーハの前記第１主面に樹脂貼りを行い、前記第２主面を片面研削し、その後樹脂を剥離し、前記第１主面を片面研削する工程であることを特徴とする上記［４］のウェーハの製造方法。
The specification includes the following aspects.
[1]: A method for manufacturing a ground wafer, which manufactures a ground wafer by grinding a raw material wafer having a first main surface and a second main surface,
A first resin pasting step of applying resin to the first main surface of the raw material wafer and forming a first resin layer on the first main surface;
a step of single-sided grinding the second main surface without the first resin layer;
a first resin layer removing step of peeling off the first resin layer;
a step of single-sided grinding the first main surface;
A second resin applying step of applying resin to the second main surface and forming a second resin layer on the second main surface;
a step of single-sided grinding the first main surface without the second resin layer;
a second resin layer removal step of peeling off the second resin layer;
A method for manufacturing a ground wafer, comprising the step of single-sided grinding the second main surface.
[2]: The method for manufacturing a ground wafer according to [1] above, characterized in that a wafer obtained by slicing an ingot is used as the raw material wafer.
[3]: When performing the first resin pasting step and the second resin pasting step, ensure that the first principal surface and the second principal surface are in the same state after the processing step. The method for manufacturing a ground wafer as described in [1] or [2] above.
[4]: In a wafer manufacturing method in which the same processing step is performed multiple times on a raw material wafer having a first main surface and a second main surface, the first main surface and the second main surface are The surface states of the two main surfaces are in the same state after the processing process, and the first main surface and the second main surface of the raw material wafer are exchanged in the odd-numbered processing steps and the even-numbered processing steps. A method for manufacturing a wafer, characterized in that processing is performed using a wafer.
[5]: The processing step is a step of applying a resin to the first main surface of the raw material wafer, grinding the second main surface on one side, then peeling off the resin, and grinding the first main surface on one side. The wafer manufacturing method according to [4] above, characterized in that:
なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 Note that the present invention is not limited to the above embodiments. The above-mentioned embodiments are illustrative, and any embodiment that has substantially the same configuration as the technical idea stated in the claims of the present invention and has similar effects is the present invention. covered within the technical scope of.
１…下定盤、 ２…光透過性フィルム、 ３…樹脂層（平坦化樹脂層）、
４…研削ホイール、 ５…チャックテーブル。
Ｓ１…第１主面、 Ｓ２…第２主面、Ｗ…ウェーハ（原料ウェーハ）。
1...Lower surface plate, 2...Light-transparent film, 3...Resin layer (flattened resin layer),
4...Grinding wheel, 5...Chuck table.
S1...first main surface, S2...second main surface, W...wafer (raw material wafer).
Claims (6)
前記原料ウェーハの前記第１主面に樹脂貼りを行い、前記第１主面に第１樹脂層を形成する第１樹脂貼り工程と、
前記第１樹脂層の無い前記第２主面を片面研削する工程と、
前記第１樹脂層を剥離する第１樹脂層除去工程と、
前記第１主面を片面研削する工程と、
前記第２主面に樹脂貼りを行い、前記第２主面に第２樹脂層を形成する第２樹脂貼り工程と、
前記第２樹脂層の無い前記第１主面を片面研削する工程と、
前記第２樹脂層を剥離する第２樹脂層除去工程と、
前記第２主面を片面研削する工程とを含むことを特徴とする研削ウェーハの製造方法。 A method for manufacturing a ground wafer, the method comprising: manufacturing a ground wafer by grinding a raw material wafer having a first main surface and a second main surface,
A first resin pasting step of applying resin to the first main surface of the raw material wafer and forming a first resin layer on the first main surface;
a step of single-sided grinding the second main surface without the first resin layer;
a first resin layer removing step of peeling off the first resin layer;
a step of single-sided grinding the first main surface;
A second resin applying step of applying resin to the second main surface and forming a second resin layer on the second main surface;
a step of single-sided grinding the first main surface without the second resin layer;
a second resin layer removal step of peeling off the second resin layer;
A method for manufacturing a ground wafer, comprising the step of single-sided grinding the second main surface.
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| PCT/JP2023/017977 WO2023228787A1 (en) | 2022-05-23 | 2023-05-12 | Method for producing ground wafer and method for producing wafer |
| TW112118077A TW202403863A (en) | 2022-05-23 | 2023-05-16 | Method for producing ground wafer and method for producing wafer |
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| JP3348429B2 (en) * | 1996-12-26 | 2002-11-20 | 信越半導体株式会社 | Thin work surface grinding method |
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