TW202347479A - Polishing method and polishing device - Google Patents

Polishing method and polishing device Download PDF

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Publication number
TW202347479A
TW202347479A TW112110326A TW112110326A TW202347479A TW 202347479 A TW202347479 A TW 202347479A TW 112110326 A TW112110326 A TW 112110326A TW 112110326 A TW112110326 A TW 112110326A TW 202347479 A TW202347479 A TW 202347479A
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polishing
grinding
head
substrate
area
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TW112110326A
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Chinese (zh)
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洪國維
山本暁
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日商荏原製作所股份有限公司
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Publication of TW202347479A publication Critical patent/TW202347479A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

The present invention pertains to a polishing method and a polishing device for polishing a peripheral portion of a substrate such as a wafer. The polishing method includes: holding a substrate (W) and rotating the substrate (W) by means of a substrate-holding unit (5); and polishing a second polishing area in a peripheral portion of the substrate (W) by moving or tilting a second polishing head (10B) in a second direction (D2) in a state where a second polishing tape (2B) is pressed against the peripheral portion of the substrate (W) by the second polishing head (10B) while polishing a first polishing area in the peripheral portion of the substrate (W) by moving or tilting a first polishing head (10A) in a first direction (D1) in a state where a first polishing tape (2A) is pressed against the peripheral portion of the substrate (W) by the first polishing head (10A), wherein the first direction (D1) and the second direction (D2) are opposite directions.

Description

研磨方法及研磨裝置Grinding method and grinding device

本發明係關於一種研磨晶圓等基板之周緣部的研磨方法及研磨裝置。The present invention relates to a polishing method and a polishing device for polishing the peripheral edge of a substrate such as a wafer.

從提高製造半導體元件時之合格率的觀點，近年來頗重視基板表面狀態之管理。半導體元件之製造工序係將各種材料膜形成於矽晶圓上。因而，會在基板之周緣部形成不需要的膜及表面粗糙。近年來通常採用僅以手臂保持基板之周緣部來搬送基板的方法。在此種背景下，殘留於周緣部之不需要的膜在經過各種工序期間會剝離，並附著於基板上所形成的元件，而使合格率降低。因此，為了除去形成於基板周緣部之不需要的膜，係使用研磨裝置進行基板周緣部之研磨。From the viewpoint of improving the yield rate when manufacturing semiconductor devices, much attention has been paid to the management of substrate surface conditions in recent years. The manufacturing process of semiconductor devices is to form films of various materials on silicon wafers. Therefore, unnecessary films and surface roughness are formed on the peripheral portion of the substrate. In recent years, a method of transporting the substrate by holding only the peripheral edge portion of the substrate is generally adopted. Against this background, unnecessary films remaining on the peripheral portion may be peeled off during various processes and adhere to elements formed on the substrate, thereby reducing the yield. Therefore, in order to remove unnecessary films formed on the peripheral portion of the substrate, a polishing device is used to polish the peripheral portion of the substrate.

此種研磨裝置習知為使用研磨帶研磨基板周緣部之裝置。藉由一邊在指定方向輸送研磨帶，一邊以研磨頭將研磨帶按壓於旋轉之基板的周緣部來研磨基板之周緣部。過去之研磨裝置習知為具備單一研磨頭者，或是如專利文獻1所示，為了縮短整個研磨處理時間而具備複數個研磨頭者。 ［先前技術文獻］ ［專利文獻］ Such a polishing device is conventionally known as a device that uses a polishing tape to polish the peripheral edge of a substrate. The peripheral edge portion of the substrate is polished by pressing the polishing tape against the peripheral edge portion of the rotating substrate with a polishing head while conveying the polishing tape in a specified direction. Conventional polishing devices are conventionally equipped with a single polishing head, or as shown in Patent Document 1, with a plurality of polishing heads in order to shorten the entire polishing process time. [Prior technical literature] [Patent Document]

[專利文獻1]日本發明專利第5274993號公報[Patent Document 1] Japanese Invention Patent No. 5274993

（發明所欲解決之問題）(Invent the problem you want to solve)

圖24係顯示以2個研磨頭110A, 110B研磨基板W之周緣部的情形圖。藉由在以研磨頭110A將研磨帶102A按壓於基板W之周緣部的同時，以研磨頭110B將研磨帶102B按壓於基板之周緣部來研磨基板W的周緣部。以2個研磨頭研磨基板W時，要比僅以1個研磨頭研磨基板W可縮短整個研磨處理時間。FIG. 24 is a diagram showing the state of polishing the peripheral portion of the substrate W using two polishing heads 110A and 110B. The peripheral edge portion of the substrate W is polished by pressing the polishing tape 102A against the peripheral edge portion of the substrate W using the polishing head 110A and simultaneously pressing the polishing tape 102B against the peripheral edge portion of the substrate W using the polishing head 110B. When the substrate W is polished with two polishing heads, the entire polishing processing time can be shortened compared with polishing the substrate W with only one polishing head.

但是，如圖24所示，將2個研磨頭110A, 110B引起之按壓力F賦予基板W的周緣部時，與以1個研磨頭研磨時比較，會在基板W之周緣部施加過大的負荷，而造成基板W翹曲。因為此種基板W之變形，導致研磨頭110A, 110B引起之按壓力無法均勻地賦予基板W的周緣部，結果無法均勻地研磨基板W的周緣部。However, as shown in FIG. 24 , when the pressing force F caused by two polishing heads 110A and 110B is applied to the peripheral portion of the substrate W, an excessive load will be applied to the peripheral portion of the substrate W compared to when polishing with one polishing head. , causing the substrate W to warp. Due to such deformation of the substrate W, the pressing force caused by the polishing heads 110A and 110B cannot be uniformly applied to the peripheral portion of the substrate W. As a result, the peripheral portion of the substrate W cannot be uniformly polished.

因此，本發明提供一種藉由使用複數個研磨頭研磨基板之周緣部，可縮短整個研磨處理時間，並抑制基板翹曲之研磨方法及研磨裝置。 （解決問題之手段） Therefore, the present invention provides a polishing method and a polishing device that can shorten the entire polishing process time and suppress warpage of the substrate by using a plurality of polishing heads to polish the peripheral portion of the substrate. (a means of solving problems)

一個樣態提供一種研磨方法，係基板之周緣部之研磨方法，且包含：藉由基板保持部保持前述基板，並使前述基板旋轉；及在以第一研磨頭將第一研磨帶按壓於前述周緣部之狀態下，使前述第一研磨頭在第一方向移動或傾斜移動，來研磨前述周緣部之第一研磨區域，與此動作同時進行，在以第二研磨頭將第二研磨帶按壓於前述周緣部之狀態下，使前述第二研磨頭在第二方向移動或傾斜移動，來研磨前述周緣部之第二研磨區域；前述第一方向與前述第二方向係相反的方向。 一個樣態係前述第一研磨區域係前述周緣部之頂邊緣部及底邊緣部中的其中一方，前述第二研磨區域係前述周緣部之頂邊緣部及底邊緣部中的另一方，前述第一方向係在前述基板之半徑方向中，接近前述基板中心之方向及從前述基板中心離開的方向中之其中一方，前述第二方向係在前述基板之半徑方向中，接近前述基板中心之方向及從前述基板中心離開的方向中之另一方。 One aspect provides a polishing method, which is a polishing method for a peripheral portion of a substrate, and includes: holding the substrate by a substrate holding portion and rotating the substrate; and pressing a first polishing tape against the substrate with a first polishing head. In the state of the peripheral portion, the first polishing head is moved in the first direction or tilted to polish the first polishing area of the peripheral portion. This movement is performed simultaneously, and the second polishing head is used to press the second polishing belt. In the state of the peripheral portion, the second grinding head is moved or tilted in a second direction to grind the second grinding area of the peripheral portion; the first direction and the second direction are opposite directions. In one aspect, the first polishing area is one of the top edge and the bottom edge of the peripheral portion, the second polishing area is the other of the top and bottom edges of the peripheral portion, and the second polishing area is the other of the top and bottom edges of the peripheral portion. One direction is one of a direction approaching the center of the substrate and a direction away from the center of the substrate in the radial direction of the substrate, the second direction is a direction approaching the center of the substrate in the radial direction of the substrate and The other direction away from the center of the substrate.

一個樣態係前述第一研磨頭之移動速度與前述第二研磨頭之移動速度相等。 一個樣態係前述第一研磨區域及前述第二研磨區域係前述周緣部之斜角部，前述第一方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側方向中的其中一方，前述第二方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側方向中的另一方。 一個樣態係前述第一研磨頭之傾斜移動速度與前述第二研磨頭之傾斜移動速度相等。 One aspect is that the moving speed of the first grinding head is equal to the moving speed of the second grinding head. In one aspect, the first polishing area and the second polishing area are bevel portions of the peripheral portion, and the first direction is a direction from an upper side of the bevel portion to a lower side and from a lower side of the bevel portion. The second direction is a direction from an upper side of the bevel portion toward a lower side and a direction from a lower side of the bevel portion toward the other of the upper directions. In one aspect, the tilting speed of the first polishing head is equal to the tilting speed of the second polishing head.

一個樣態係連結前述第一研磨頭與前述基板中心之線，與連結前述第二研磨頭與前述基板中心之線形成的角度在0度至90度之範圍內。 一個樣態係研磨前述第一研磨區域時，使前述第一研磨頭在前述第一方向移動或傾斜移動後，使前述第一研磨頭進一步在前述第二方向移動或傾斜移動而至少往返1次研磨前述第一研磨區域，研磨前述第二研磨區域時，使前述第二研磨頭在前述第二方向移動或傾斜移動後，使前述第二研磨頭進一步在前述第一方向移動或傾斜移動而至少往返1次研磨前述第二研磨區域。 One aspect is that the angle formed by the line connecting the first polishing head and the center of the substrate and the line connecting the second polishing head and the center of the substrate is in the range of 0 degrees to 90 degrees. One aspect is that when polishing the first polishing area, after the first polishing head is moved or tilted in the first direction, the first polishing head is further moved or tilted in the second direction and reciprocated at least once. When grinding the first grinding area and grinding the second grinding area, after the second grinding head is moved or tilted in the second direction, the second grinding head is further moved or tilted in the first direction to at least Grind the second grinding area in one round trip.

一個樣態提供一種研磨裝置，係基板之周緣部的研磨裝置，且具備：基板保持部，其係保持前述基板，並使前述基板以指定之旋轉軸心為中心而旋轉；第一研磨頭，其係將第一研磨帶按壓於前述周緣部；第二研磨頭，其係將第二研磨帶按壓於前述周緣部；第一研磨頭活動機構，其係使前述第一研磨頭移動或傾斜移動；第二研磨頭活動機構，其係使前述第二研磨頭移動或傾斜移動；及動作控制部，其係控制前述研磨裝置之動作；前述動作控制部係以一邊在以前述第一研磨頭將前述第一研磨帶按壓於前述周緣部之狀態下，藉由前述第一研磨頭活動機構使前述第一研磨頭在第一方向移動或傾斜移動，來研磨前述周緣部之第一研磨區域，一邊在以前述第二研磨頭將前述第二研磨帶按壓於前述周緣部之狀態下，藉由前述第二研磨頭活動機構使前述第二研磨頭在第二方向移動或傾斜移動，來研磨前述周緣部之第二研磨區域的方式而構成，前述第一方向與前述第二方向係相反的方向。One aspect provides a polishing device, which is a polishing device for a peripheral portion of a substrate and includes: a substrate holding portion that holds the substrate and rotates the substrate around a designated rotation axis; and a first polishing head, It presses the first grinding belt against the aforementioned peripheral portion; the second grinding head presses the second grinding belt against the aforementioned peripheral portion; and the first grinding head movable mechanism moves or tilts the first grinding head. ; The second grinding head movable mechanism makes the second grinding head move or tilt; and the action control part controls the action of the grinding device; the action control part moves the first grinding head with one side on one side; In a state where the first polishing belt is pressed against the peripheral portion, the first polishing head movable mechanism moves the first polishing head in a first direction or tilts to polish the first polishing area of the peripheral portion. In a state where the second polishing head presses the second polishing tape against the peripheral edge, the second polishing head movable mechanism moves the second polishing head in the second direction or tilts to polish the peripheral edge. The first direction and the second direction are opposite directions.

一個樣態係前述第一研磨頭活動機構係使前述第一研磨頭平移移動之第一研磨頭平移移動機構，前述第二研磨頭活動機構係使前述第二研磨頭平移移動之第二研磨頭平移移動機構，前述第一研磨區域係前述周緣部之頂邊緣部及底邊緣部中的其中一方，前述第二研磨區域係前述周緣部之頂邊緣部及底邊緣部中的另一方，前述第一方向係接近前述指定之旋轉軸心的方向及從前述指定之旋轉軸心離開的方向中之其中一方，前述第二方向係接近前述指定之旋轉軸心的方向及從前述指定之旋轉軸心離開的方向中之另一方。One aspect is that the first grinding head movable mechanism is a first grinding head translation moving mechanism that moves the first grinding head in translation, and the second grinding head moving mechanism is a second grinding head that moves the second grinding head in translation. In the translational movement mechanism, the first polishing area is one of the top edge and the bottom edge of the peripheral portion, the second polishing area is the other of the top and bottom edges of the peripheral portion, and the third grinding area is the other of the top and bottom edges of the peripheral portion. One direction is one of the direction approaching the aforementioned designated rotation axis and the direction away from the aforementioned designated rotation axis. The aforementioned second direction is the direction approaching the aforementioned designated rotation axis and the direction away from the aforementioned designated rotation axis. The other party in the direction of departure.

一個樣態係前述第一研磨頭之移動速度與前述第二研磨頭之移動速度相等。 一個樣態係前述第一研磨頭活動機構係使前述第一研磨頭傾斜移動之第一研磨頭傾斜移動機構，前述第二研磨頭活動機構係使前述第二研磨頭傾斜移動之第二研磨頭傾斜移動機構，前述第一研磨區域及前述第二研磨區域係前述周緣部之斜角部，前述第一方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側的方向中之其中一方，前述第二方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側的方向中之另一方。 一個樣態係前述第一研磨頭之傾斜移動速度與前述第二研磨頭之傾斜移動速度相等。 One aspect is that the moving speed of the first grinding head is equal to the moving speed of the second grinding head. In one aspect, the first grinding head movable mechanism is a first grinding head tilt moving mechanism that tilts the first grinding head, and the second grinding head moving mechanism is a second grinding head that tilts the second grinding head. In the tilt movement mechanism, the first polishing area and the second polishing area are bevel portions of the peripheral portion, and the first direction is a direction from the upper side of the bevel portion to the lower side and from the lower side of the bevel portion. One of the directions toward the upper side, the second direction is the other one of the direction from the upper side of the bevel portion to the lower side and the direction from the lower side of the bevel portion to the upper side. In one aspect, the tilting speed of the first polishing head is equal to the tilting speed of the second polishing head.

一個樣態係連結前述第一研磨頭與前述基板中心之線，與連結前述第二研磨頭與前述基板中心之線形成的角度在0度至90度之範圍內。 一個樣態係前述動作控制部係以對前述第一研磨頭活動機構發出指令，使前述第一研磨頭在前述第一方向移動或傾斜移動後，使前述第一研磨頭進一步在前述第二方向移動或傾斜移動，而至少往返1次研磨前述第一研磨區域，並且對前述第二研磨頭活動機構發出指令，使前述第二研磨頭在前述第二方向移動或傾斜移動後，使前述第二研磨頭進一步在前述第一方向移動或傾斜移動，而至少往返1次研磨前述第二研磨區域之方式而構成。 （發明之效果） One aspect is that the angle formed by the line connecting the first polishing head and the center of the substrate and the line connecting the second polishing head and the center of the substrate is in the range of 0 degrees to 90 degrees. One aspect is that the action control unit issues an instruction to the first polishing head movable mechanism to move or tilt the first polishing head in the first direction, and then further moves the first polishing head in the second direction. Move or tilt to grind the first grinding area back and forth at least once, and issue a command to the second grinding head movable mechanism to move or tilt the second grinding head in the second direction, and then make the second grinding head move or tilt in the second direction. The polishing head is further moved or tilted in the first direction to polish the second polishing area in at least one round trip. (The effect of invention)

採用本發明時，藉由一邊使第一研磨頭在第一方向移動或傾斜移動來研磨基板周緣部之第一研磨區域，一邊使第二研磨頭在與第一方向相反之第二方向移動或傾斜移動來研磨基板周緣部的第二研磨區域，從而可縮短整個研磨處理時間，並抑制基板之翹曲。 再者，採用本發明時，因為第一研磨頭與第二研磨頭係一邊在作為相反方向之第一方向及第二方向移動，一邊研磨基板，所以可防止在使第一研磨頭與第二研磨頭從基板之頂邊緣部側與底邊緣部側的兩側按壓而移動時，基板與第一研磨頭及第二研磨頭一起移動，對基板保持部基板位置偏移。 When the present invention is adopted, the first polishing area of the peripheral portion of the substrate is polished by moving or tilting the first polishing head in the first direction, while the second polishing head is moved in the second direction opposite to the first direction or The second polishing area on the peripheral edge of the substrate is polished by tilting movement, thereby shortening the entire polishing process time and suppressing warpage of the substrate. Furthermore, when the present invention is adopted, since the first polishing head and the second polishing head polish the substrate while moving in the first direction and the second direction, which are opposite directions, it is possible to prevent the first polishing head and the second polishing head from interfering with each other while polishing the substrate. When the polishing head is pressed and moved from both sides of the top edge side and the bottom edge side of the substrate, the substrate moves together with the first polishing head and the second polishing head, thereby shifting the position of the substrate in the substrate holding part.

以下，參照圖式說明本發明之實施形態。 圖1A及圖1B係顯示基板W之周緣部的放大剖面圖。更詳細而言，圖1A係所謂直(straight)型基板之剖面圖，圖1B係所謂圓角(round)型基板之剖面圖。斜角部B具有倒角之形狀或帶圓的形狀。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1A and 1B are enlarged cross-sectional views showing the peripheral portion of the substrate W. As shown in FIG. More specifically, FIG. 1A is a cross-sectional view of a so-called straight type substrate, and FIG. 1B is a cross-sectional view of a so-called round type substrate. The bevel portion B has a chamfered shape or a rounded shape.

圖1A之基板W中，斜角(bevel)部B係由上側傾斜面（上側斜角部）B1、下側傾斜面（下側斜角部）B2、及側部（頂點）B3構成之基板W的最外周面。圖1B之基板W中，斜角部B係構成基板W之最外周面的具有彎曲剖面之部分。頂邊緣部E1係位於斜角部B之半徑方向內側的環狀平坦部。底邊緣部E2位於與頂邊緣部E1相反側，且係位於斜角部B之半徑方向內側的環狀平坦部。頂邊緣部E1亦包含形成有元件之區域。本說明書中，基板W之周緣部顯示包含頂邊緣部E1、斜角部B、及底邊緣部E2中之任何一個的區域。In the substrate W in FIG. 1A , the bevel portion B is a substrate composed of an upper inclined surface (upper bevel portion) B1, a lower inclined surface (lower bevel portion) B2, and a side portion (vertex) B3. The outermost surface of W. In the substrate W of FIG. 1B , the bevel portion B is a portion having a curved cross section constituting the outermost peripheral surface of the substrate W. The top edge portion E1 is an annular flat portion located inside the bevel portion B in the radial direction. The bottom edge portion E2 is located on the opposite side to the top edge portion E1 and is an annular flat portion located on the inside of the bevel portion B in the radial direction. The top edge portion E1 also includes a region where components are formed. In this specification, the peripheral portion of the substrate W indicates a region including any one of the top edge portion E1, the bevel portion B, and the bottom edge portion E2.

圖2係顯示研磨裝置之一種實施形態的俯視圖。圖3係從圖2之箭頭A指示的方向觀看之側視圖。圖4係從圖2之箭頭B指示的方向觀看之側視圖。研磨裝置係用於研磨半導體晶圓等之基板W的周緣部之裝置。研磨裝置具備：基板保持部5、第一研磨頭10A、第二研磨頭10B、第一研磨帶供給機構20A、第二研磨帶供給機構20B、下側供給噴嘴31、及上側供給噴嘴32。FIG. 2 is a top view showing an embodiment of the grinding device. FIG. 3 is a side view viewed from the direction indicated by arrow A in FIG. 2 . FIG. 4 is a side view viewed from the direction indicated by arrow B in FIG. 2 . The polishing device is a device for polishing the peripheral portion of a substrate W such as a semiconductor wafer. The polishing device includes the substrate holder 5 , the first polishing head 10A, the second polishing head 10B, the first polishing tape supply mechanism 20A, the second polishing tape supply mechanism 20B, the lower supply nozzle 31 , and the upper supply nozzle 32 .

基板保持部5具備：藉由真空吸附而保持基板W之保持載台(holding stage)7；連結於保持載台7之中央部的軸桿8；及使保持載台7旋轉且上下移動之保持載台驅動機構9。保持載台驅動機構9係使保持載台7以指定之旋轉軸心Cr為中心而旋轉，並可沿著指定之旋轉軸心Cr而在上下方向移動地構成。通過基板W之中心O1的軸心與指定之旋轉軸心Cr實質地一致。The substrate holding part 5 is provided with: a holding stage 7 that holds the substrate W by vacuum suction; a shaft 8 connected to the center of the holding stage 7; and a holding stage that rotates and moves the holding stage 7 up and down. Stage driving mechanism 9. The holding stage drive mechanism 9 is configured to rotate the holding stage 7 around a designated rotation axis Cr and to be movable in the up and down direction along the designated rotation axis Cr. The axis passing through the center O1 of the substrate W substantially coincides with the designated rotation axis Cr.

第一研磨頭10A係以將第一研磨帶2A按壓於基板W之周緣部，來研磨基板W之周緣部的方式而構成。第二研磨頭10B係以將第二研磨帶2B按壓於基板W之周緣部，來研磨基板W之周緣部的方式而構成。因為第一研磨頭10A及第二研磨頭10B基本上具有相同構成，所以，以下說明第一研磨頭10A。The first polishing head 10A is configured to polish the peripheral edge of the substrate W by pressing the first polishing tape 2A against the peripheral edge of the substrate W. The second polishing head 10B is configured to polish the peripheral edge of the substrate W by pressing the second polishing tape 2B against the peripheral edge of the substrate W. Since the first polishing head 10A and the second polishing head 10B basically have the same structure, the first polishing head 10A will be described below.

第一研磨頭10A具備：對基板W之周緣部按壓第一研磨帶2A的研磨面之按壓構件12；及使按壓構件12朝向基板W之周緣部移動的空氣汽缸（驅動機構）15。藉由控制向空氣汽缸15供給之空氣壓，來調整第一研磨帶2A對基板W之按壓力。按壓構件12配置於第一研磨帶2A之背面側（具有磨粒之研磨面的背面）。按壓構件12藉由空氣汽缸15而朝向基板W移動時，按壓構件12將第一研磨帶2A從其背面對基板W之周緣部按壓。藉此，第一研磨頭10A研磨基板W之周緣部。The first polishing head 10A includes a pressing member 12 that presses the polishing surface of the first polishing belt 2A against the peripheral edge of the substrate W; and an air cylinder (driving mechanism) 15 that moves the pressing member 12 toward the peripheral edge of the substrate W. By controlling the air pressure supplied to the air cylinder 15, the pressing force of the first polishing belt 2A on the substrate W is adjusted. The pressing member 12 is arranged on the back side of the first polishing belt 2A (the back side having the polishing surface of the abrasive grains). When the pressing member 12 moves toward the substrate W by the air cylinder 15, the pressing member 12 presses the first polishing tape 2A from its back surface toward the peripheral edge of the substrate W. Thereby, the first polishing head 10A polishes the peripheral portion of the substrate W.

如圖2所示，連結第一研磨頭10A與基板W之中心O1的線L1、與連結第二研磨頭10B與基板W之中心O1的線L2形成之角度α1在0度至90度的範圍內。角度α1只須為比180度小之角度即可，例如亦可為130度、50度、或0度（亦即，第一研磨頭10A與第二研磨頭10B上下重疊之位置）。As shown in FIG. 2 , the angle α1 formed by the line L1 connecting the first polishing head 10A and the center O1 of the substrate W and the line L2 connecting the second polishing head 10B and the center O1 of the substrate W is in the range of 0 to 90 degrees. within. The angle α1 only needs to be an angle smaller than 180 degrees, for example, it can also be 130 degrees, 50 degrees, or 0 degrees (that is, the position where the first grinding head 10A and the second grinding head 10B overlap vertically).

第一研磨帶供給機構20A係以將第一研磨帶2A供給至第一研磨頭10A，且從第一研磨頭10A回收之方式而構成。第二研磨帶供給機構20B係以將第二研磨帶2B供給至第二研磨頭10B，且從第二研磨頭10B回收之方式而構成。因為第一研磨帶供給機構20A及第二研磨帶供給機構20B基本上具有相同構成，所以，以下說明第一研磨帶供給機構20A。The first polishing tape supply mechanism 20A is configured to supply the first polishing tape 2A to the first polishing head 10A and collect it from the first polishing head 10A. The second polishing tape supply mechanism 20B is configured to supply the second polishing tape 2B to the second polishing head 10B and collect it from the second polishing head 10B. Since the first polishing tape supply mechanism 20A and the second polishing tape supply mechanism 20B basically have the same structure, the first polishing tape supply mechanism 20A will be described below.

第一研磨帶供給機構20A具備：帶捲出捲軸21、帶捲收捲軸22、及複數個導輥24, 25, 26, 27。帶捲出捲軸21、帶捲收捲軸22及複數個導輥24, 25, 26, 27固定於捲軸座(reel base)28。第一研磨帶2A係以第一研磨帶2A之研磨面朝向基板W的周緣部之方式供給至第一研磨頭10A。第一研磨帶2A之行進方向藉由導輥24, 25, 26, 27引導。The first polishing tape supply mechanism 20A includes a tape unwinding reel 21, a tape winding up reel 22, and a plurality of guide rollers 24, 25, 26, and 27. The tape unwinding reel 21 , the tape winding up reel 22 and a plurality of guide rollers 24 , 25 , 26 , 27 are fixed to a reel base 28 . The first polishing tape 2A is supplied to the first polishing head 10A such that the polishing surface of the first polishing tape 2A faces the peripheral edge of the substrate W. The traveling direction of the first polishing belt 2A is guided by guide rollers 24, 25, 26, and 27.

帶捲出捲軸21及帶捲收捲軸22分別連結有無圖示之張力馬達。帶捲出捲軸21及帶捲收捲軸22經由張力馬達而固定於捲軸座28。各個張力馬達係以對帶捲出捲軸21及帶捲收捲軸22賦予指定之轉矩，可對第一研磨帶2A施加指定張力之方式而構成。The tape take-up reel 21 and the tape take-up reel 22 are respectively connected to tension motors (not shown). The tape take-up reel 21 and the tape take-up reel 22 are fixed to the reel seat 28 via a tension motor. Each tension motor is configured to apply a prescribed torque to the tape unwinding spool 21 and the tape taking-up spool 22 so as to apply a prescribed tension to the first polishing tape 2A.

下側供給噴嘴31係以在基板W之下面供給液體的方式而構成。上側供給噴嘴32係以在基板W之上面供給液體的方式而構成。供給至基板W之液體的一例可舉出純水。基板W研磨中，從下側供給噴嘴31供給液體至基板W之下面，並從上側供給噴嘴32供給液體至基板W的上面。The lower supply nozzle 31 is configured to supply liquid below the substrate W. The upper supply nozzle 32 is configured to supply liquid on the upper surface of the substrate W. An example of the liquid supplied to the substrate W is pure water. During polishing of the substrate W, liquid is supplied from the lower supply nozzle 31 to the lower surface of the substrate W, and liquid is supplied from the upper supply nozzle 32 to the upper surface of the substrate W.

研磨裝置進一步具備：作為第一研磨頭活動機構之第一研磨頭平移移動機構40A；及作為第二研磨頭活動機構之第二研磨頭平移移動機構40B。第一研磨頭平移移動機構40A係以使第一研磨頭10A沿著基板W之半徑方向平移移動的方式而構成。第二研磨頭平移移動機構40B係以使第二研磨頭10B沿著基板W之半徑方向平移移動的方式而構成。因為第一研磨頭平移移動機構40A及第二研磨頭平移移動機構40B基本上具有相同構成，所以，以下就第一研磨頭平移移動機構40A作說明。The grinding device further includes: a first grinding head translational movement mechanism 40A as the first grinding head movable mechanism; and a second grinding head translation movement mechanism 40B as the second grinding head movable mechanism. The first polishing head translational movement mechanism 40A is configured to translately move the first polishing head 10A along the radial direction of the substrate W. The second polishing head translational movement mechanism 40B is configured to translately move the second polishing head 10B along the radial direction of the substrate W. Since the first grinding head translational movement mechanism 40A and the second grinding head translation movement mechanism 40B basically have the same structure, the first grinding head translation movement mechanism 40A will be described below.

第一研磨頭平移移動機構40A具備：連結構件43、導軌44、連結軸桿46、及空氣汽缸（驅動機構）47。第一研磨頭平移移動機構40A經由活動板41而連結於第一研磨頭10A及第一研磨帶供給機構20A。更具體而言，連結於第一研磨頭10A之研磨頭支撐構件18及第一研磨帶供給機構20A的捲軸座28連結於活動板41之上面，第一研磨頭平移移動機構40A連結於活動板41之下面。整個第一研磨頭10A及第一研磨帶供給機構20A可與活動板41一體地移動。The first grinding head translational movement mechanism 40A includes a connecting member 43 , a guide rail 44 , a connecting shaft 46 , and an air cylinder (driving mechanism) 47 . The first polishing head translational movement mechanism 40A is connected to the first polishing head 10A and the first polishing tape supply mechanism 20A via the movable plate 41 . More specifically, the grinding head support member 18 of the first grinding head 10A and the reel seat 28 of the first grinding tape supply mechanism 20A are connected above the movable plate 41, and the first grinding head translational movement mechanism 40A is connected to the movable plate. Below 41. The entire first polishing head 10A and the first polishing tape supply mechanism 20A can move integrally with the movable plate 41 .

導軌44在與連結保持載台7上之指定的旋轉軸心Cr（亦即，基板W之中心O1）與第一研磨頭10A之線的相同方向延伸，並固定於底板48。空氣汽缸47經由連結構件43及連結軸桿46而連結於活動板41，並固定於底板48。第一研磨頭平移移動機構40A藉由驅動空氣汽缸47並沿著導軌44使活動板41以指定之移動速度移動，可使第一研磨頭10A及第一研磨帶供給機構20A以指定之移動速度在接近基板W之指定旋轉軸心Cr（亦即，基板W之中心O1）的方向及從指定之旋轉軸心Cr（亦即，基板W之中心O1）離開的方向移動。The guide rail 44 extends in the same direction as the line connecting the designated rotation axis Cr on the holding stage 7 (that is, the center O1 of the substrate W) and the first polishing head 10A, and is fixed to the base plate 48 . The air cylinder 47 is connected to the movable plate 41 via the connecting member 43 and the connecting shaft 46, and is fixed to the bottom plate 48. The first grinding head translation moving mechanism 40A drives the air cylinder 47 and moves the movable plate 41 along the guide rail 44 at a designated moving speed, so that the first grinding head 10A and the first grinding tape supply mechanism 20A can move at a designated moving speed. It moves in a direction approaching the designated rotation axis Cr of the substrate W (that is, the center O1 of the substrate W) and in a direction away from the designated rotation axis Cr (that is, the center O1 of the substrate W).

另外，只要可使第一研磨頭10A在接近基板W之指定旋轉軸心Cr（亦即，基板W之中心O1）的方向及從指定之旋轉軸心Cr（亦即，基板W之中心O1）離開的方向移動，則第一研磨頭平移移動機構40A之具體的構成不限於本實施形態。In addition, as long as the first polishing head 10A can be moved in a direction close to the designated rotation axis Cr of the substrate W (that is, the center O1 of the substrate W) and from the designated rotation axis Cr (that is, the center O1 of the substrate W) When moving in the away direction, the specific structure of the first polishing head translational movement mechanism 40A is not limited to this embodiment.

研磨裝置進一步具備：作為第一研磨頭活動機構之第一研磨頭傾斜移動機構50A；及作為第二研磨頭活動機構之第二研磨頭傾斜移動機構50B。第一研磨頭傾斜移動機構50A連結於第一研磨頭10A，第二研磨頭傾斜移動機構50B連結於第二研磨頭10B。第一研磨頭傾斜移動機構50A係以使第一研磨頭10A對保持載台7之基板保持面傾斜移動的方式而構成。第二研磨頭傾斜移動機構50B係以使第二研磨頭10B對保持載台7之基板保持面傾斜移動的方式而構成。因為第一研磨頭傾斜移動機構50A及第二研磨頭傾斜移動機構50B基本上具有相同構成，所以，以下就第一研磨頭傾斜移動機構50A作說明。The grinding device further includes: a first grinding head tilt movement mechanism 50A as a first grinding head movable mechanism; and a second grinding head tilt movement mechanism 50B as a second grinding head movement mechanism. The first polishing head tilt movement mechanism 50A is connected to the first polishing head 10A, and the second polishing head tilt movement mechanism 50B is connected to the second polishing head 10B. The first polishing head tilt movement mechanism 50A is configured to tilt the first polishing head 10A with respect to the substrate holding surface of the holding stage 7 . The second polishing head tilt movement mechanism 50B is configured to tilt the second polishing head 10B with respect to the substrate holding surface of the holding stage 7 . Since the first polishing head tilt movement mechanism 50A and the second polishing head tilt movement mechanism 50B basically have the same structure, the first polishing head tilt movement mechanism 50A will be described below.

第一研磨頭傾斜移動機構50A具備：連結於第一研磨頭10A之曲柄臂52；及使曲柄臂52旋轉之臂旋轉裝置53。曲柄臂52之一端位於與保持載台7之基板保持面實質地相同高度，並連結於臂旋轉裝置53。曲柄臂52之另一端連結於第一研磨頭10A。臂旋轉裝置53配置於研磨頭支撐構件18之內部，曲柄臂52貫穿研磨頭支撐構件18而延伸。The first polishing head tilt movement mechanism 50A includes: a crank arm 52 connected to the first polishing head 10A; and an arm rotation device 53 for rotating the crank arm 52. One end of the crank arm 52 is located at substantially the same height as the substrate holding surface of the holding stage 7 and is connected to the arm rotating device 53 . The other end of the crank arm 52 is connected to the first grinding head 10A. The arm rotating device 53 is disposed inside the polishing head support member 18 , and the crank arm 52 extends through the polishing head support member 18 .

第一研磨頭傾斜移動機構50A在臂旋轉裝置53使曲柄臂52旋轉時，可使整個第一研磨頭10A對保持載台7之基板保持面上的基板W以指定之傾斜移動速度而傾斜移動。再者，第一研磨頭傾斜移動機構50A係以可將第一研磨頭10A維持在指定之傾斜角度的方式而構成。另外，只要可使第一研磨頭10A對保持載台7之基板保持面及基板W傾斜移動，則第一研磨頭傾斜移動機構50A之具體構成不限於本實施形態。When the arm rotation device 53 rotates the crank arm 52 of the first polishing head tilting mechanism 50A, the entire first polishing head 10A can tilt the substrate W on the substrate holding surface of the holding stage 7 at a designated tilting speed. . Furthermore, the first polishing head tilt movement mechanism 50A is configured to maintain the first polishing head 10A at a predetermined tilt angle. In addition, as long as the first polishing head 10A can be tilted relative to the substrate holding surface of the holding stage 7 and the substrate W, the specific structure of the first polishing head tilt movement mechanism 50A is not limited to this embodiment.

圖3所示之第一研磨頭10A係藉由第一研磨頭傾斜移動機構50A可研磨基板W之頂邊緣部E1（參照圖1A及圖1B）的方式而傾斜之狀態。圖4所示之第二研磨頭10B係藉由第二研磨頭傾斜移動機構50B可研磨基板W之底邊緣部E2（參照圖1A及圖1B）的方式而傾斜之狀態。The first polishing head 10A shown in FIG. 3 is tilted by the first polishing head tilt movement mechanism 50A so as to polish the top edge E1 of the substrate W (refer to FIGS. 1A and 1B ). The second polishing head 10B shown in FIG. 4 is tilted by the second polishing head tilt movement mechanism 50B to polish the bottom edge E2 of the substrate W (refer to FIGS. 1A and 1B ).

圖5係顯示藉由第一研磨頭10A研磨基板W之斜角部B（參照圖1A及圖1B）的情形圖。第一研磨頭傾斜移動機構50A使第一研磨頭10A之傾斜角度連續變化，即可研磨基板W之斜角部B。如此，第一研磨頭10A及第二研磨頭10B藉由第一研磨頭傾斜移動機構50A及第二研磨頭傾斜移動機構50B傾斜移動，可研磨基板W之周緣部的頂邊緣部E1、底邊緣部E2、及斜角部B。FIG. 5 is a diagram showing how the bevel portion B of the substrate W is polished by the first polishing head 10A (refer to FIGS. 1A and 1B ). The first polishing head tilt moving mechanism 50A continuously changes the tilt angle of the first polishing head 10A, so that the bevel portion B of the substrate W can be polished. In this way, the first polishing head 10A and the second polishing head 10B are tilted by the first polishing head tilt movement mechanism 50A and the second polishing head tilt movement mechanism 50B to polish the top edge E1 and the bottom edge of the peripheral portion of the substrate W. Part E2, and bevel part B.

本實施形態之研磨裝置備有第一研磨頭平移移動機構40A及第一研磨頭傾斜移動機構50A作為第一研磨頭活動機構，並具備第二研磨頭平移移動機構40B及第二研磨頭傾斜移動機構50B作為第二研磨頭活動機構，不過，一種實施形態係研磨裝置亦可係以僅備有第一研磨頭平移移動機構40A作為第一研磨頭活動機構，僅備有第二研磨頭平移移動機構40B作為第二研磨頭活動機構，並在基板W之周緣部中僅研磨頂邊緣部E1或底邊緣部E2的方式而構成。The grinding device of this embodiment is equipped with a first grinding head translational movement mechanism 40A and a first grinding head tilt movement mechanism 50A as the first grinding head movable mechanism, and is equipped with a second grinding head translation movement mechanism 40B and a second grinding head tilt movement. The mechanism 50B serves as the second grinding head movable mechanism. However, in one embodiment, the grinding device can also be equipped with only the first grinding head translational movement mechanism 40A as the first grinding head movable mechanism, and only with the second grinding head translational movement. The mechanism 40B serves as a second polishing head movable mechanism and is configured to polish only the top edge portion E1 or the bottom edge portion E2 of the peripheral edge portion of the substrate W.

研磨裝置進一步具備控制研磨裝置之動作的動作控制部80。基板保持部5、第一研磨頭10A、第二研磨頭10B、第一研磨帶供給機構20A、第二研磨帶供給機構20B、下側供給噴嘴31、上側供給噴嘴32、第一研磨頭平移移動機構40A、第二研磨頭平移移動機構40B、第一研磨頭傾斜移動機構50A、及第二研磨頭傾斜移動機構50B電性連接於動作控制部80。基板保持部5、第一研磨頭10A、第二研磨頭10B、第一研磨帶供給機構20A、第二研磨帶供給機構20B、下側供給噴嘴31、上側供給噴嘴32、第一研磨頭平移移動機構40A、第二研磨頭平移移動機構40B、第一研磨頭傾斜移動機構50A、及第二研磨頭傾斜移動機構50B之動作藉由動作控制部80來控制。The polishing device further includes an operation control unit 80 that controls the operation of the polishing device. The substrate holding part 5, the first polishing head 10A, the second polishing head 10B, the first polishing tape supply mechanism 20A, the second polishing tape supply mechanism 20B, the lower supply nozzle 31, the upper supply nozzle 32, and the first polishing head translate. The mechanism 40A, the second grinding head translation movement mechanism 40B, the first grinding head tilt movement mechanism 50A, and the second grinding head tilt movement mechanism 50B are electrically connected to the action control unit 80 . The substrate holding part 5, the first polishing head 10A, the second polishing head 10B, the first polishing tape supply mechanism 20A, the second polishing tape supply mechanism 20B, the lower supply nozzle 31, the upper supply nozzle 32, and the first polishing head translate. The operations of the mechanism 40A, the second polishing head translational movement mechanism 40B, the first polishing head tilt movement mechanism 50A, and the second polishing head tilt movement mechanism 50B are controlled by the action control unit 80 .

動作控制部80具備至少1台電腦。動作控制部80具備：儲存程式之記憶裝置80a；及按照程式執行演算之演算裝置80b。記憶裝置80a具備：演算裝置80b可存取之主記憶裝置（例如隨機存取記憶體）；與儲存程式之輔助記憶裝置（例如，硬碟機或固態硬碟）。演算裝置80b包含按照儲存於記憶裝置80a之程式中包含的命令進行演算之CPU（中央處理裝置）或GPU（圖形處理模組）等。不過，動作控制部80之具體構成不限定於此等之例。The operation control unit 80 includes at least one computer. The action control unit 80 includes: a memory device 80a that stores a program; and a calculation device 80b that executes calculations according to the program. The memory device 80a includes: a main memory device (such as a random access memory) that can be accessed by the computing device 80b; and an auxiliary memory device (such as a hard disk or a solid state drive) for storing programs. The computing device 80b includes a CPU (Central Processing Unit) or a GPU (Graphics Processing Module) that performs computing according to commands included in the program stored in the memory device 80a. However, the specific structure of the operation control unit 80 is not limited to these examples.

本實施形態之研磨裝置使第一研磨頭10A與第二研磨頭10B同時驅動，來同時研磨基板W之周緣部。基板W之周緣部的研磨進行如下。將基板W搬送至研磨裝置時，動作控制部80對基板保持部5之保持載台驅動機構9發出指令使保持載台7上升。基板W被放置於保持載台7之基板保持面，並藉由真空吸附而保持。動作控制部80對基板保持部5之保持載台驅動機構9發出指令，使基板W下降至研磨位置，並使保持載台7及基板W旋轉。再者，動作控制部80對下側供給噴嘴31及上側供給噴嘴32發出指令，從而從下側供給噴嘴31及上側供給噴嘴32供給液體。The polishing device of this embodiment drives the first polishing head 10A and the second polishing head 10B simultaneously to polish the peripheral edge of the substrate W simultaneously. The peripheral edge portion of the substrate W is polished as follows. When the substrate W is transported to the polishing device, the operation control unit 80 instructs the holding stage driving mechanism 9 of the substrate holding unit 5 to raise the holding stage 7 . The substrate W is placed on the substrate holding surface of the holding stage 7 and held by vacuum suction. The operation control unit 80 issues a command to the holding stage driving mechanism 9 of the substrate holding unit 5 to lower the substrate W to the polishing position and rotate the holding stage 7 and the substrate W. Furthermore, the operation control unit 80 issues instructions to the lower supply nozzle 31 and the upper supply nozzle 32 to supply liquid from the lower supply nozzle 31 and the upper supply nozzle 32 .

其次，動作控制部80對第一研磨帶供給機構20A發出指令，從而開始對第一研磨頭10A供給第一研磨帶2A，並對第二研磨帶供給機構20B發出指令，從而開始對第二研磨頭10B供給第二研磨帶2B。然後，動作控制部80對第一研磨頭10A之空氣汽缸15發出指令，從而以第一研磨頭10A之按壓構件12將第一研磨帶2A按壓於基板W的周緣部，並且對第二研磨頭10B之空氣汽缸15發出指令，從而以第二研磨頭10B之按壓構件12將第二研磨帶2B按壓於基板W的周緣部。Next, the operation control unit 80 issues an instruction to the first polishing tape supply mechanism 20A to start supplying the first polishing tape 2A to the first polishing head 10A, and issues an instruction to the second polishing tape supply mechanism 20B to start supplying the second polishing tape 2A. The head 10B supplies the second polishing tape 2B. Then, the operation control unit 80 issues a command to the air cylinder 15 of the first polishing head 10A, thereby pressing the first polishing tape 2A against the peripheral edge of the substrate W with the pressing member 12 of the first polishing head 10A, and pressing the second polishing head 10A. The air cylinder 15 of 10B issues a command to press the second polishing tape 2B against the peripheral edge of the substrate W using the pressing member 12 of the second polishing head 10B.

研磨基板W之頂邊緣部E1及底邊緣部E2時，動作控制部80一邊對第一研磨頭平移移動機構40A發出指令，從而在以第一研磨頭10A將第一研磨帶2A按壓於基板W之頂邊緣部E1及底邊緣部E2中的其中一方之狀態下，使第一研磨頭10A移動，一邊對第二研磨頭平移移動機構40B發出指令，從而在以第二研磨頭10B將第二研磨帶2B按壓於基板W之頂邊緣部E1及底邊緣部E2中的另一方之狀態下，使第二研磨頭10B移動。When polishing the top edge E1 and the bottom edge E2 of the substrate W, the action control unit 80 issues a command to the first polishing head translation movement mechanism 40A, thereby pressing the first polishing tape 2A against the substrate W with the first polishing head 10A. In the state of one of the top edge portion E1 and the bottom edge portion E2, the first polishing head 10A is moved and a command is issued to the second polishing head translation movement mechanism 40B, so that the second polishing head 10B is used to move the second polishing head 10A. The second polishing head 10B is moved while the polishing tape 2B is pressed against the other one of the top edge E1 and the bottom edge E2 of the substrate W.

研磨基板W之斜角部B時，動作控制部80一邊對第一研磨頭傾斜移動機構50A發出指令，從而在以第一研磨頭10A將第一研磨帶2A按壓於基板W之斜角部B的狀態下，使第一研磨頭10A傾斜移動，一邊對第二研磨頭傾斜移動機構50B發出指令，從而在以第二研磨頭10B將第二研磨帶2B按壓於基板W之斜角部B的狀態下，使第二研磨頭10B傾斜移動。When polishing the bevel portion B of the substrate W, the operation control unit 80 issues a command to the first polishing head tilt movement mechanism 50A, thereby pressing the first polishing belt 2A against the bevel portion B of the substrate W with the first polishing head 10A. In the state, the first polishing head 10A is tilted while issuing a command to the second polishing head tilting movement mechanism 50B, so that the second polishing tape 2B is pressed against the bevel portion B of the substrate W with the second polishing head 10B. state, the second polishing head 10B is tilted and moved.

動作控制部80按照指定之研磨處理配方(recipe)研磨基板W的周緣部後，對研磨裝置發出指令使基板W之研磨結束。具體而言，動作控制部80係使第一研磨頭平移移動機構40A與第二研磨頭平移移動機構40B、或第一研磨頭傾斜移動機構50A與第二研磨頭傾斜移動機構50B之動作停止，並使第一研磨頭10A之空氣汽缸15及第二研磨頭10B之空氣汽缸15的驅動停止，從而使第一研磨頭10A之按壓構件12及第二研磨頭10B之按壓構件12從基板W離開。然後，動作控制部80使基板保持部5、第一研磨帶供給機構20A、第二研磨帶供給機構20B、下側供給噴嘴31、及上側供給噴嘴32的動作停止，從而結束基板W之研磨。After polishing the peripheral edge of the substrate W according to a designated polishing recipe, the operation control unit 80 issues a command to the polishing device to complete polishing of the substrate W. Specifically, the operation control unit 80 stops the operation of the first polishing head translational movement mechanism 40A and the second polishing head translational movement mechanism 40B, or the first polishing head tilt movement mechanism 50A and the second polishing head tilt movement mechanism 50B, The driving of the air cylinder 15 of the first polishing head 10A and the air cylinder 15 of the second polishing head 10B is stopped, so that the pressing member 12 of the first polishing head 10A and the pressing member 12 of the second polishing head 10B are separated from the substrate W. . Then, the operation control unit 80 stops the operations of the substrate holding unit 5, the first polishing tape supply mechanism 20A, the second polishing tape supply mechanism 20B, the lower supply nozzle 31, and the upper supply nozzle 32, thereby completing polishing of the substrate W.

圖6A係顯示第一研磨頭10A之研磨動作的一種實施形態圖，圖6B係顯示第二研磨頭10B之研磨動作的一種實施形態圖。本實施形態之研磨裝置係一邊以第一研磨頭10A研磨基板W之頂邊緣部E1，一邊以第二研磨頭10B研磨基板W之底邊緣部E2。圖6A及圖6B係基板W之頂邊緣部E1與第一研磨帶2A、底邊緣部E2與第二研磨帶2B之接觸部的放大模式圖。FIG. 6A is a diagram showing an embodiment of the grinding action of the first polishing head 10A, and FIG. 6B is a diagram showing an embodiment of the grinding action of the second polishing head 10B. The polishing device of this embodiment uses the first polishing head 10A to polish the top edge portion E1 of the substrate W, while using the second polishing head 10B to polish the bottom edge portion E2 of the substrate W. 6A and 6B are enlarged schematic views of the contact portions between the top edge portion E1 of the substrate W and the first polishing tape 2A, and the bottom edge portion E2 and the second polishing tape 2B.

藉由第一研磨頭10A研磨之第一研磨區域係基板W之頂邊緣部E1內的第一研磨點P1與第二研磨點P2之間的區域。第一研磨點P1在比第二研磨點P2接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第二研磨頭10B研磨之第二研磨區域係基板W之底邊緣部E2內的第三研磨點P3與第四研磨點P4之間的區域。第三研磨點P3位於比第四研磨點P4遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。The first polishing area polished by the first polishing head 10A is the area between the first polishing point P1 and the second polishing point P2 in the top edge E1 of the substrate W. The first polishing point P1 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the second polishing point P2. The second polishing area polished by the second polishing head 10B is the area between the third polishing point P3 and the fourth polishing point P4 in the bottom edge E2 of the substrate W. The third polishing point P3 is located farther from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the fourth polishing point P4.

本實施形態之第一研磨區域與第二研磨區域位於相反側。亦即，第一研磨區域兩端之第一研磨點P1、第二研磨點P2，與第二研磨區域兩端之第三研磨點P3、第四研磨點P4位於相反側。第一研磨點P1與基板W之中心O1（亦即指定之旋轉軸心Cr）的距離、與第四研磨點P4與基板W之中心O1（亦即，指定之旋轉軸心Cr）的距離相等。第二研磨點P2與基板W之中心O1（亦即，指定之旋轉軸心Cr）的距離、與第三研磨點P3與基板W之中心O1（亦即，指定之旋轉軸心Cr）的距離相等。亦即，第一研磨區域與第二研磨區域在基板W之半徑方向的長度相等。In this embodiment, the first polishing area and the second polishing area are located on opposite sides. That is, the first grinding point P1 and the second grinding point P2 at both ends of the first grinding area are located on the opposite side to the third grinding point P3 and fourth grinding point P4 at both ends of the second grinding area. The distance between the first grinding point P1 and the center O1 of the substrate W (that is, the designated rotation axis Cr) is equal to the distance between the fourth grinding point P4 and the center O1 of the substrate W (that is, the designated rotation axis Cr). . The distance between the second grinding point P2 and the center O1 of the substrate W (that is, the designated rotation axis Cr), and the distance between the third grinding point P3 and the center O1 of the substrate W (that is, the designated rotation axis Cr) equal. That is, the lengths of the first polishing area and the second polishing area in the radial direction of the substrate W are equal.

如圖6A所示，第一研磨頭10A將第一研磨帶2A按壓於第一研磨點P1開始研磨第一研磨區域。其次，在以第一研磨頭10A將第一研磨帶2A按壓於基板W的狀態下，藉由第一研磨頭平移移動機構40A使第一研磨頭10A在第一方向D1移動至第二研磨點P2。第一方向D1在基板W之半徑方向係從基板W之中心O1離開的方向，亦即，係從指定之旋轉軸心Cr離開的方向。As shown in FIG. 6A , the first polishing head 10A presses the first polishing belt 2A to the first polishing point P1 to start polishing the first polishing area. Next, with the first polishing head 10A pressing the first polishing tape 2A against the substrate W, the first polishing head 10A is moved to the second polishing point in the first direction D1 by the first polishing head translational movement mechanism 40A. P2. The first direction D1 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, it is a direction away from the designated rotation axis Cr.

再者，在以第一研磨頭10A將第一研磨帶2A按壓於基板W的狀態下，藉由第一研磨頭平移移動機構40A使第一研磨頭10A在第二方向D2移動至第一研磨點P1。第二方向D2在基板W之半徑方向係接近基板W之中心O1的方向，亦即，係接近指定之旋轉軸心Cr的方向。第一方向D1與第二方向D2係相反方向。藉此，第一研磨頭10A往返1次研磨第一研磨區域。一種實施形態亦可進一步使第一研磨頭10A在第一方向D1移動，反覆進行圖6A所示之研磨動作，而往返複數次研磨第一研磨區域。或是，亦可不使第一研磨頭10A在第二方向D2移動，而單程部分研磨第一研磨區域。Furthermore, in a state where the first polishing head 10A presses the first polishing tape 2A against the substrate W, the first polishing head 10A is moved to the first polishing position in the second direction D2 by the first polishing head translational movement mechanism 40A. Click P1. The second direction D2 is a direction close to the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction close to the designated rotation axis Cr. The first direction D1 and the second direction D2 are opposite directions. Thereby, the first polishing head 10A polishes the first polishing area in one round trip. In one embodiment, the first polishing head 10A can be further moved in the first direction D1, and the polishing action shown in FIG. 6A can be repeatedly performed, and the first polishing area can be polished back and forth several times. Alternatively, the first polishing head 10A may not be moved in the second direction D2 and the first polishing area may be partially polished in a single pass.

如圖6B所示，第二研磨頭10B將第二研磨帶2B按壓於第三研磨點P3而開始研磨第二研磨區域。其次，在以第二研磨頭10B將第二研磨帶2B按壓於基板W的狀態下，藉由第二研磨頭平移移動機構40B使第二研磨頭10B在第二方向D2移動至第四研磨點P4。第二方向D2與參照圖6A所說明之第二方向D2相同。As shown in FIG. 6B , the second polishing head 10B presses the second polishing belt 2B against the third polishing point P3 to start polishing the second polishing area. Next, with the second polishing head 10B pressing the second polishing tape 2B against the substrate W, the second polishing head 10B is moved to the fourth polishing point in the second direction D2 by the second polishing head translational movement mechanism 40B. P4. The second direction D2 is the same as the second direction D2 described with reference to FIG. 6A .

再者，在以第二研磨頭10B將第二研磨帶2B按壓於基板W的狀態下，藉由第二研磨頭平移移動機構40B使第二研磨頭10B在第一方向D1移動至第三研磨點P3。第一方向D1係與參照圖6A所說明之第一方向D1相同。藉此，第二研磨頭10B往返1次研磨第二研磨區域。一種實施形態亦可進一步使第二研磨頭10B在第二方向D2移動，反覆進行圖6B所示之研磨動作，來往返複數次研磨第二研磨區域。或是亦可不使第二研磨頭10B在第一方向D1移動，而單程部分研磨第二研磨區域。Furthermore, in a state where the second polishing head 10B presses the second polishing tape 2B against the substrate W, the second polishing head translation movement mechanism 40B moves the second polishing head 10B in the first direction D1 to the third polishing position. Click P3. The first direction D1 is the same as the first direction D1 explained with reference to FIG. 6A . Thereby, the second polishing head 10B polishes the second polishing area in one round trip. In one embodiment, the second polishing head 10B can be further moved in the second direction D2, and the polishing action shown in FIG. 6B can be repeatedly performed, and the second polishing area can be polished back and forth several times. Alternatively, the second polishing head 10B may not be moved in the first direction D1 and the second polishing area may be partially polished in a single pass.

第一研磨頭10A與第二研磨頭10B同時研磨頂邊緣部E1之第一研磨區域與底邊緣部E2之第二研磨區域。亦可第一研磨頭10A將第一研磨帶2A按壓於第一研磨點P1而開始研磨第一研磨區域的時機、與第二研磨頭10B將第二研磨帶2B按壓於第三研磨點P3而開始研磨第二研磨區域的時機同時。亦可第一研磨頭10A與第二研磨頭10B之移動速度相等，而第一研磨頭10A到達第二研磨點P2之時機、與第二研磨頭10B到達第四研磨點P4之時機同時。再者，亦可第一研磨頭10A與第二研磨頭10B折回，而第一研磨頭10A返回第一研磨點P1之時機、與第二研磨頭10B返回第三研磨點P3之時機同時。再者，研磨結束時，亦可使第一研磨頭10A之按壓構件12從基板W離開的時機、與使第二研磨頭10B之按壓構件12從基板W離開的時機同時。The first grinding head 10A and the second grinding head 10B simultaneously grind the first grinding area of the top edge part E1 and the second grinding area of the bottom edge part E2. It is also possible that the first polishing head 10A presses the first polishing belt 2A to the first polishing point P1 to start polishing the first polishing area at the same time as the second polishing head 10B presses the second polishing belt 2B to the third polishing point P3. The timing to start grinding the second grinding area is the same. Alternatively, the moving speeds of the first grinding head 10A and the second grinding head 10B may be equal, and the timing when the first grinding head 10A reaches the second grinding point P2 and the timing when the second grinding head 10B reaches the fourth grinding point P4 are simultaneous. Furthermore, the first grinding head 10A and the second grinding head 10B can also be folded back, and the timing of the first grinding head 10A returning to the first grinding point P1 is the same as the timing of the second grinding head 10B returning to the third grinding point P3. Furthermore, when polishing is completed, the timing at which the pressing member 12 of the first polishing head 10A is separated from the substrate W may be synchronized with the timing at which the pressing member 12 of the second polishing head 10B is separated from the substrate W.

採用本實施形態時，因為第一研磨頭10A與第二研磨頭10B同時研磨頂邊緣部E1之第一研磨區域與底邊緣部E2之第二研磨區域，所以與以1個研磨頭研磨頂邊緣部E1與底邊緣部E2時比較，可縮短整體之研磨處理時間。When this embodiment is adopted, since the first polishing head 10A and the second polishing head 10B polish the first polishing area of the top edge E1 and the second polishing area of the bottom edge E2 at the same time, the top edge is polished with one polishing head. Compared with the bottom edge portion E1 and the bottom edge portion E2, the overall grinding processing time can be shortened.

此外，第一研磨區域與第二研磨區域位於相反側，因為第一研磨頭10A與第二研磨頭10B一邊在作為相反方向之第一方向D1及第二方向D2移動，一邊研磨基板W，所以第一研磨頭10A引起之按壓力與第二研磨頭10B引起之按壓力係賦予相反方向。因此，如參照圖24之說明，第一研磨頭10A與第二研磨頭10B引起之按壓力不致過大賦予基板W的周緣部，可抑制基板W翹曲。In addition, the first polishing area and the second polishing area are located on opposite sides, because the first polishing head 10A and the second polishing head 10B polish the substrate W while moving in the first direction D1 and the second direction D2 which are opposite directions, so The pressing force caused by the first polishing head 10A and the pressing force caused by the second polishing head 10B are given in opposite directions. Therefore, as explained with reference to FIG. 24 , the pressing force caused by the first polishing head 10A and the second polishing head 10B is not excessively applied to the peripheral portion of the substrate W, and warpage of the substrate W can be suppressed.

再者，採用本實施形態時，因為第一研磨頭10A與第二研磨頭10B係一邊在作為相反方向之第一方向D1及第二方向D2移動，一邊研磨基板W，所以可防止在使第一研磨頭10A與第二研磨頭10B從基板W之頂邊緣部側與底邊緣部側的兩側按壓而移動時，基板W與第一研磨頭10A及第二研磨頭10B一起移動，對基板保持部5基板位置偏移。Furthermore, in this embodiment, since the first polishing head 10A and the second polishing head 10B polish the substrate W while moving in the first direction D1 and the second direction D2 which are opposite directions, it is possible to prevent the first polishing head 10A and the second polishing head 10B from polishing the substrate W. When the first polishing head 10A and the second polishing head 10B are pressed and moved from both sides of the top edge side and the bottom edge side of the substrate W, the substrate W moves together with the first polishing head 10A and the second polishing head 10B to polish the substrate. The position of the substrate of the holding part 5 is shifted.

圖7A至圖9B係顯示第一研磨頭10A及第二研磨頭10B之研磨動作的其他實施形態圖。由於不特別說明之此等實施形態的構成及動作與參照圖6A及圖6B所說明之實施形態相同，因此省略其重複之說明。7A to 9B are diagrams showing other embodiments of polishing operations of the first polishing head 10A and the second polishing head 10B. Since the structures and operations of these embodiments that are not particularly described are the same as those of the embodiments described with reference to FIGS. 6A and 6B , repeated descriptions thereof are omitted.

參照圖6A及圖6B所說明之實施形態，第一研磨區域係基板W之周緣部的頂邊緣部E1，第二研磨區域係基板W之周緣部的底邊緣部E2，不過如圖7A至圖9B所示，第一研磨區域可為頂邊緣部E1及底邊緣部E2中之其中一方，而第二研磨區域為頂邊緣部E1及底邊緣部E2中之另一方。Referring to the embodiment illustrated in FIGS. 6A and 6B , the first polishing area is the top edge E1 of the peripheral portion of the substrate W, and the second polishing area is the bottom edge E2 of the peripheral portion of the substrate W. However, as shown in FIG. 7A to FIG. As shown in 9B, the first polishing area may be one of the top edge part E1 and the bottom edge part E2, and the second polishing area may be the other one of the top edge part E1 and the bottom edge part E2.

此外，參照圖6A及圖6B所說明之實施形態，第一方向D1在基板W之半徑方向係從基板W之中心O1（亦即，指定之旋轉軸心Cr）離開的方向，第二方向D2在基板W之半徑方向係接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的方向，不過如圖7A至圖9B所示，第一方向D1在基板W之半徑方向可為接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的方向及從基板W之中心O1（亦即，指定之旋轉軸心Cr）離開的方向中之其中一方，第二方向D2在基板W之半徑方向可為接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的方向及從基板W之中心O1（亦即，指定之旋轉軸心Cr）離開的方向中之另一方。In addition, referring to the embodiment illustrated in FIGS. 6A and 6B , the first direction D1 is a direction away from the center O1 (that is, the designated rotation axis Cr) of the substrate W in the radial direction of the substrate W, and the second direction D2 The radial direction of the substrate W is a direction close to the center O1 of the substrate W (that is, the designated rotation axis Cr). However, as shown in FIGS. 7A to 9B , the first direction D1 may be close to the radial direction of the substrate W. One of the direction of the center O1 of the substrate W (that is, the designated rotation axis Cr) and the direction away from the center O1 of the substrate W (that is, the designated rotation axis Cr), the second direction D2 is on the substrate The radial direction of W may be the other of a direction approaching the center O1 of the substrate W (that is, the designated rotation axis Cr) and a direction away from the center O1 of the substrate W (that is, the designated rotation axis Cr). .

圖7A及圖7B所示之實施形態，藉由第一研磨頭10A研磨之第一研磨區域係頂邊緣部E1，而第一研磨點P1及第二研磨點P2在頂邊緣部E1內。第一研磨點P1在比第二研磨點P2遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第二研磨頭10B研磨之第二研磨區域係底邊緣部E2，而第三研磨點P3及第四研磨點P4在底邊緣部E2內。第三研磨點P3在比第四研磨點P4接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。第一方向D1在基板W之半徑方向係接近基板W之中心O1的方向，亦即係接近指定之旋轉軸心Cr的方向。第二方向D2在基板W之半徑方向係從基板W之中心O1離開的方向，亦即從指定之旋轉軸心Cr離開的方向。In the embodiment shown in FIGS. 7A and 7B , the first polishing area polished by the first polishing head 10A is the top edge E1, and the first polishing point P1 and the second polishing point P2 are within the top edge E1. The first polishing point P1 is located farther from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the second polishing point P2. The second grinding area polished by the second grinding head 10B is the bottom edge portion E2, and the third grinding point P3 and the fourth grinding point P4 are within the bottom edge portion E2. The third polishing point P3 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the fourth polishing point P4. The first direction D1 is a direction close to the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction close to the designated rotation axis Cr. The second direction D2 is the direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, the direction away from the designated rotation axis Cr.

圖8A及圖8B所示之實施形態，藉由第一研磨頭10A研磨之第一研磨區域係底邊緣部E2，而第一研磨點P1及第二研磨點P2在底邊緣部E2內。第一研磨點P1在比第二研磨點P2遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第二研磨頭10B研磨之第二研磨區域係頂邊緣部E1，而第三研磨點P3及第四研磨點P4在頂邊緣部E1內。第三研磨點P3在比第四研磨點P4接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。第一方向D1在基板W之半徑方向係接近基板W之中心O1的方向，亦即係接近指定之旋轉軸心Cr的方向。第二方向D2在基板W之半徑方向係從基板W之中心O1離開的方向，亦即係從指定之旋轉軸心Cr離開的方向。In the embodiment shown in FIGS. 8A and 8B , the first polishing area polished by the first polishing head 10A is the bottom edge E2, and the first polishing point P1 and the second polishing point P2 are within the bottom edge E2. The first polishing point P1 is located farther from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the second polishing point P2. The second grinding area polished by the second grinding head 10B is the top edge portion E1, and the third grinding point P3 and the fourth grinding point P4 are within the top edge portion E1. The third polishing point P3 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the fourth polishing point P4. The first direction D1 is a direction close to the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction close to the designated rotation axis Cr. The second direction D2 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, it is a direction away from the designated rotation axis Cr.

圖9A及圖9B所示之實施形態，藉由第一研磨頭10A研磨之第一研磨區域係底邊緣部E2，而第一研磨點P1及第二研磨點P2在底邊緣部E2內。第一研磨點P1在比第二研磨點P2接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第二研磨頭10B研磨之第二研磨區域係頂邊緣部E1，而第三研磨點P3及第四研磨點P4在頂邊緣部E1內。第三研磨點P3在比第四研磨點P4遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。第一方向D1在基板W之半徑方向係從基板W之中心O1離開的方向，亦即係從指定之旋轉軸心Cr離開的方向。第二方向D2在基板W之半徑方向係接近基板W之中心O1的方向，亦即係接近指定之旋轉軸心Cr的方向。In the embodiment shown in FIGS. 9A and 9B , the first polishing area polished by the first polishing head 10A is the bottom edge E2, and the first polishing point P1 and the second polishing point P2 are within the bottom edge E2. The first polishing point P1 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the second polishing point P2. The second grinding area polished by the second grinding head 10B is the top edge portion E1, and the third grinding point P3 and the fourth grinding point P4 are within the top edge portion E1. The third polishing point P3 is located farther from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the fourth polishing point P4. The first direction D1 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, it is a direction away from the designated rotation axis Cr. The second direction D2 is a direction close to the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction close to the designated rotation axis Cr.

其次，說明研磨基板W之斜角部B時的第一研磨頭10A及第二研磨頭10B之研磨動作。圖10A係顯示研磨基板W之斜角部B時的第一研磨頭10A之研磨動作的一種實施形態圖。圖10B係顯示研磨基板W之斜角部B時的第二研磨頭10B之研磨動作的一種實施形態圖。由於不特別說明之本實施形態的構成及動作與參照圖6A及圖6B所說明之實施形態相同，因此省略其重複之說明。Next, the polishing operation of the first polishing head 10A and the second polishing head 10B when polishing the bevel portion B of the substrate W will be described. FIG. 10A is a diagram showing an embodiment of the polishing operation of the first polishing head 10A when polishing the bevel portion B of the substrate W. As shown in FIG. FIG. 10B is a diagram showing an embodiment of the polishing operation of the second polishing head 10B when polishing the bevel portion B of the substrate W. As shown in FIG. Since the structure and operation of this embodiment which are not particularly described are the same as those of the embodiment described with reference to FIGS. 6A and 6B , repeated descriptions thereof are omitted.

藉由第一研磨頭10A研磨之第一研磨區域係基板W之斜角部B內的第一研磨點P1與第二研磨點P2之間的區域。第一研磨點P1比第二研磨點P2在斜角部B中位於上側。藉由第二研磨頭10B研磨之第二研磨區域係基板W之斜角部B內的第三研磨點P3與第四研磨點P4之間的區域。第三研磨點P3比第四研磨點P4在斜角部B中位於下側。The first polishing area polished by the first polishing head 10A is the area between the first polishing point P1 and the second polishing point P2 in the bevel portion B of the substrate W. The first polishing point P1 is located above the second polishing point P2 in the bevel portion B. The second polishing area polished by the second polishing head 10B is the area between the third polishing point P3 and the fourth polishing point P4 in the bevel portion B of the substrate W. The third polishing point P3 is located lower than the fourth polishing point P4 in the bevel portion B.

本實施形態係藉由第一研磨頭10A開始研磨之第一研磨區域兩端中的一端之第一研磨點P1、與藉由第二研磨頭10B開始研磨之第二研磨區域兩端中的一端之第三研磨點P3在斜角部B中位於相反側。此外，第一研磨區域兩端中之另一端的第二研磨點P2、與第二研磨區域兩端中之另一端的第四研磨點P4在斜角部B中位於相反側。藉由第一研磨頭10A研磨之第一研磨區域、與藉由第二研磨頭10B研磨之第二研磨區域實質地一致。亦即，第一研磨點P1與第四研磨點P4實質地一致，而第二研磨點P2與第三研磨點P3實質地一致。In this embodiment, the first grinding point P1 at one end of the first grinding area where grinding is started by the first grinding head 10A, and one of the two ends of the second grinding area where grinding is started by the second grinding head 10B The third grinding point P3 is located on the opposite side of the bevel portion B. In addition, the second polishing point P2 at the other end of the first polishing area and the fourth polishing point P4 at the other end of the second polishing area are located on opposite sides of the bevel portion B. The first polishing area polished by the first polishing head 10A is substantially consistent with the second polishing area polished by the second polishing head 10B. That is, the first grinding point P1 and the fourth grinding point P4 are substantially consistent, and the second grinding point P2 and the third grinding point P3 are substantially consistent.

如圖10A所示，第一研磨頭10A將第一研磨帶2A按壓於第一研磨點P1開始研磨第一研磨區域。其次，在以第一研磨頭10A將第一研磨帶2A按壓於基板W的狀態下，藉由第一研磨頭傾斜移動機構50A使第一研磨頭10A在第一方向D1傾斜移動至第二研磨點P2。第一方向D1係從斜角部B之上側朝向下側的方向。As shown in FIG. 10A , the first polishing head 10A presses the first polishing belt 2A to the first polishing point P1 to start polishing the first polishing area. Next, with the first polishing head 10A pressing the first polishing tape 2A against the substrate W, the first polishing head tilt movement mechanism 50A tilts the first polishing head 10A in the first direction D1 to the second polishing position. Click P2. The first direction D1 is a direction from the upper side of the bevel portion B toward the lower side.

再者，在以第一研磨頭10A將第一研磨帶2A按壓於基板W的狀態下，藉由第一研磨頭傾斜移動機構50A使第一研磨頭10A在第二方向D2傾斜移動至第一研磨點P1。第二方向D2係從斜角部B之下側朝向上側的方向。第一方向D1與第二方向D2係相反方向。藉此，第一研磨頭10A往返1次研磨第一研磨區域。一種實施形態亦可進一步使第一研磨頭10A在第一方向D1傾斜移動，反覆進行圖10A所示之研磨動作，而複數次往返研磨第一研磨區域。或是，亦可不使第一研磨頭10A在第二方向D2傾斜移動而單程部分研磨第一研磨區域。Furthermore, in a state where the first polishing head 10A presses the first polishing tape 2A against the substrate W, the first polishing head tilt moving mechanism 50A tilts the first polishing head 10A in the second direction D2 to the first position. Grinding point P1. The second direction D2 is a direction from the lower side of the bevel portion B toward the upper side. The first direction D1 and the second direction D2 are opposite directions. Thereby, the first polishing head 10A polishes the first polishing area in one round trip. In one embodiment, the first grinding head 10A can be further tilted in the first direction D1 to repeatedly perform the grinding action shown in FIG. 10A to grind the first grinding area back and forth a plurality of times. Alternatively, the first polishing head 10A may be partially polished in a single pass without tilting the first polishing head 10A in the second direction D2.

如圖10B所示，第二研磨頭10B將第二研磨帶2B按壓於第三研磨點P3開始研磨第二研磨區域。其次，在以第二研磨頭10B將第二研磨帶2B按壓於基板W的狀態下，藉由第二研磨頭傾斜移動機構50B使第二研磨頭10B在第二方向D2傾斜移動至第四研磨點P4。第二方向D2與參照圖10A所說明之第二方向D2相同。As shown in FIG. 10B , the second polishing head 10B presses the second polishing belt 2B to the third polishing point P3 to start polishing the second polishing area. Next, with the second polishing head 10B pressing the second polishing tape 2B against the substrate W, the second polishing head tilt movement mechanism 50B tilts the second polishing head 10B in the second direction D2 to the fourth polishing position. Click P4. The second direction D2 is the same as the second direction D2 described with reference to FIG. 10A .

再者，在以第二研磨頭10B將第二研磨帶2B按壓於基板W的狀態下，藉由第二研磨頭傾斜移動機構50B使第二研磨頭10B在第一方向D1傾斜移動至第三研磨點P3。第一方向D1與參照圖10A所說明之第一方向D1相同。藉此，第二研磨頭10B往返1次研磨第二研磨區域。一種實施形態係亦可進一步使第二研磨頭10B在第二方向D2傾斜移動，反覆進行圖10B所示之研磨動作，而往返複數次研磨第二研磨區域。或是，亦可不使第二研磨頭10B在第一方向D1傾斜移動，而單程部分研磨第二研磨區域。Furthermore, in a state where the second polishing head 10B presses the second polishing tape 2B against the substrate W, the second polishing head tilt movement mechanism 50B tilts the second polishing head 10B in the first direction D1 to the third position. Grinding point P3. The first direction D1 is the same as the first direction D1 described with reference to FIG. 10A . Thereby, the second polishing head 10B polishes the second polishing area in one round trip. In one embodiment, the second grinding head 10B can be further tilted in the second direction D2 to repeatedly perform the grinding action shown in FIG. 10B to grind the second grinding area back and forth several times. Alternatively, the second polishing head 10B may not be tilted in the first direction D1, but the second polishing area may be partially polished in a single pass.

第一研磨頭10A與第二研磨頭10B同時研磨斜角部B之第一研磨區域與第二研磨區域。亦可第一研磨頭10A將第一研磨帶2A按壓於第一研磨點P1而開始研磨第一研磨區域的時機、與第二研磨頭10B將第二研磨帶2B按壓於第三研磨點P3而開始研磨第二研磨區域的時機同時。亦可第一研磨頭10A與第二研磨頭10B之傾斜移動速度相等，而第一研磨頭10A到達第二研磨點P2之時機、與第二研磨頭10B到達第四研磨點P4之時機同時。再者，亦可第一研磨頭10A與第二研磨頭10B折回，而第一研磨頭10A返回第一研磨點P1的時機、與第二研磨頭10B返回第三研磨點P3之時機同時。再者，研磨結束時，亦可使第一研磨頭10A之按壓構件12從基板W離開的時機、與使第二研磨頭10B之按壓構件12從基板W離開的時機同時。The first grinding head 10A and the second grinding head 10B grind the first grinding area and the second grinding area of the bevel portion B simultaneously. It is also possible that the first polishing head 10A presses the first polishing belt 2A to the first polishing point P1 to start polishing the first polishing area at the same time as the second polishing head 10B presses the second polishing belt 2B to the third polishing point P3. The timing to start grinding the second grinding area is the same. Alternatively, the tilting speeds of the first grinding head 10A and the second grinding head 10B may be equal, and the timing when the first grinding head 10A reaches the second grinding point P2 and the timing when the second grinding head 10B reaches the fourth grinding point P4 are simultaneous. Furthermore, the first grinding head 10A and the second grinding head 10B can also be folded back, and the timing of the first grinding head 10A returning to the first grinding point P1 is the same as the timing of the second grinding head 10B returning to the third grinding point P3. Furthermore, when polishing is completed, the timing of separating the pressing member 12 of the first polishing head 10A from the substrate W may be the same as the timing of separating the pressing member 12 of the second polishing head 10B from the substrate W.

採用本實施形態時，因為以第一研磨頭10A與第二研磨頭10B同時研磨斜角部B，所以與以1個研磨頭研磨斜角部B時比較，可縮短整體之研磨處理時間。In this embodiment, since the bevel portion B is ground simultaneously with the first polishing head 10A and the second polishing head 10B, the overall polishing processing time can be shortened compared with the case where one polishing head is used to polish the bevel portion B.

此外，藉由第一研磨頭10A開始研磨之第一研磨點P1與藉由第二研磨頭10B開始研磨之第三研磨點P3在斜角部B中位於相反側，因為第一研磨頭10A與第二研磨頭10B一邊在作為相反方向之第一方向D1及第二方向D2傾斜移動，一邊研磨基板W，所以第一研磨頭10A引起之按壓力與第二研磨頭10B引起之按壓力對斜角部B賦予相反方向。因此，如參照圖24之說明，第一研磨頭10A與第二研磨頭10B引起之按壓力不致過大賦予基板W的周緣部，可抑制基板W翹曲。In addition, the first grinding point P1 where grinding is started by the first grinding head 10A and the third grinding point P3 where grinding is started by the second grinding head 10B are located on opposite sides in the bevel part B because the first grinding head 10A and The second polishing head 10B polishes the substrate W while tilting in the first direction D1 and the second direction D2 which are opposite directions. Therefore, the pressing force caused by the first polishing head 10A and the pressing force caused by the second polishing head 10B are oblique. Corner B gives the opposite direction. Therefore, as explained with reference to FIG. 24 , the pressing force caused by the first polishing head 10A and the second polishing head 10B is not excessively applied to the peripheral portion of the substrate W, and warpage of the substrate W can be suppressed.

圖11A至圖13B係顯示第一研磨頭10A及第二研磨頭10B之研磨動作的其他實施形態圖。由於不特別說明之此等實施形態的構成及動作與參照圖10A及圖10A所說明之實施形態相同，因此省略其重複之說明。11A to 13B are diagrams showing other embodiments of polishing operations of the first polishing head 10A and the second polishing head 10B. Since the structures and operations of these embodiments that are not particularly described are the same as those of the embodiments described with reference to FIGS. 10A and 10A , repeated descriptions thereof are omitted.

參照圖10A及圖10B所說明之實施形態，第一方向D1係從斜角部B之上側朝向下側的方向，第二方向D2係從斜角部B之下側朝向上側的方向，不過，如圖11A至圖13B所示，第一方向D1可為從斜角部B之上側朝向下側的方向及從斜角部B之下側朝向上側的方向中之其中一方，第二方向D2可為從斜角部B之上側朝向下側的方向及從斜角部B之下側朝向上側的方向中之另一方。Referring to the embodiment illustrated in FIGS. 10A and 10B , the first direction D1 is a direction from the upper side of the bevel portion B to the lower side, and the second direction D2 is a direction from the lower side of the bevel portion B to the upper side. However, As shown in FIGS. 11A to 13B , the first direction D1 may be one of a direction from the upper side of the bevel portion B toward the lower side and a direction from the lower side of the bevel portion B toward the upper side. The second direction D2 may be It is the other one of the direction from the upper side of the bevel portion B toward the lower side and the direction from the lower side of the bevel portion B toward the upper side.

圖11A及圖11B所示之實施形態，藉由第一研磨頭10A研磨之第一研磨區域係斜角部B，而第一研磨點P1及第二研磨點P2在斜角部B內。第一研磨點P1比第二研磨點P2在斜角部B中位於下側。藉由第二研磨頭10B研磨之第二研磨區域係斜角部B，而第三研磨點P3及第四研磨點P4在斜角部B內。第三研磨點P3比第四研磨點P4在斜角部B中位於上側。第一方向D1係從斜角部B之下側朝向上側的方向。第二方向D2係從斜角部B之上側朝向下側的方向。In the embodiment shown in FIGS. 11A and 11B , the first polishing area polished by the first polishing head 10A is the bevel part B, and the first polishing point P1 and the second polishing point P2 are within the bevel part B. The first polishing point P1 is located lower than the second polishing point P2 in the bevel portion B. The second grinding area polished by the second grinding head 10B is the bevel portion B, and the third grinding point P3 and the fourth grinding point P4 are within the bevel portion B. The third polishing point P3 is located above the fourth polishing point P4 in the bevel portion B. The first direction D1 is a direction from the lower side of the bevel portion B toward the upper side. The second direction D2 is a direction from the upper side of the bevel portion B toward the lower side.

圖12A及圖12B所示之實施形態，藉由第一研磨頭10A研磨之第一研磨區域係斜角部B中的上側區域，第一研磨點P1及第二研磨點P2在斜角部B內。第一研磨點P1比第二研磨點P2在斜角部B中位於上側，而第二研磨點P2位於斜角部B之中央。藉由第二研磨頭10B研磨之第二研磨區域係斜角部B中之下側區域，而第三研磨點P3及第四研磨點P4在斜角部B內。第三研磨點P3比第四研磨點P4在斜角部B中位於下側，而第四研磨點P4位於斜角部B之中央。第一方向D1係從斜角部B之上側朝向下側的方向。第二方向D2係從斜角部B之下側朝向上側的方向。如此，第一研磨頭10A及第二研磨頭10B亦可研磨斜角部B內之不同區域。In the embodiment shown in FIGS. 12A and 12B , the first polishing area polished by the first polishing head 10A is the upper area in the bevel portion B, and the first polishing point P1 and the second polishing point P2 are in the bevel portion B. within. The first polishing point P1 is located above the second polishing point P2 in the bevel portion B, and the second polishing point P2 is located in the center of the bevel portion B. The second grinding area polished by the second grinding head 10B is the lower area in the bevel portion B, and the third grinding point P3 and the fourth grinding point P4 are in the bevel portion B. The third grinding point P3 is located lower than the fourth grinding point P4 in the bevel portion B, and the fourth grinding point P4 is located in the center of the bevel portion B. The first direction D1 is a direction from the upper side of the bevel portion B toward the lower side. The second direction D2 is a direction from the lower side of the bevel portion B toward the upper side. In this way, the first grinding head 10A and the second grinding head 10B can also grind different areas in the bevel portion B.

圖13A及圖13B所示之實施形態，藉由第一研磨頭10A研磨之第一研磨區域係斜角部B中的下側區域，第一研磨點P1及第二研磨點P2在斜角部B內。第一研磨點P1比第二研磨點P2在斜角部B中位於下側，而第二研磨點P2位於斜角部B之中央。藉由第二研磨頭10B研磨之第二研磨區域係斜角部B中之上側區域，而第三研磨點P3及第四研磨點P4在斜角部B內。第三研磨點P3比第四研磨點P4在斜角部B中位於上側，而第四研磨點P4位於斜角部B之中央。第一方向D1係從斜角部B之下側朝向上側的方向。第二方向D2係從斜角部B之上側朝向下側的方向。如此，第一研磨頭10A及第二研磨頭10B亦可研磨斜角部B內之不同區域。In the embodiment shown in FIGS. 13A and 13B , the first polishing area polished by the first polishing head 10A is the lower area in the bevel portion B, and the first polishing point P1 and the second polishing point P2 are in the bevel portion B. Within B. The first grinding point P1 is located lower than the second grinding point P2 in the bevel portion B, and the second grinding point P2 is located in the center of the bevel portion B. The second grinding area polished by the second grinding head 10B is the upper area in the bevel portion B, and the third grinding point P3 and the fourth grinding point P4 are in the bevel portion B. The third grinding point P3 is located above the fourth grinding point P4 in the bevel portion B, and the fourth grinding point P4 is located in the center of the bevel portion B. The first direction D1 is a direction from the lower side of the bevel portion B toward the upper side. The second direction D2 is a direction from the upper side of the bevel portion B toward the lower side. In this way, the first grinding head 10A and the second grinding head 10B can also grind different areas in the bevel portion B.

圖14係顯示研磨裝置之其他實施形態的俯視圖。本實施形態之研磨裝置除了第一研磨頭10A、第二研磨頭10B之外，還具備第三研磨頭10C、及第四研磨頭10D。由於不特別說明之本實施形態的研磨裝置之構成與參照圖2至圖5所說明之研磨裝置的構成相同，因此省略其重複之說明。FIG. 14 is a top view showing another embodiment of the polishing device. The polishing device of this embodiment is equipped with a third polishing head 10C and a fourth polishing head 10D in addition to the first polishing head 10A and the second polishing head 10B. Since the structure of the polishing device of this embodiment which is not particularly described is the same as the structure of the polishing device described with reference to FIGS. 2 to 5 , repeated description thereof will be omitted.

本實施形態之研磨裝置進一步具備：將第三研磨帶2C供給至第三研磨頭10C，且從第三研磨頭10C回收之第三研磨帶供給機構（無圖示）；將第四研磨帶2D供給至第四研磨頭10D，且從第四研磨頭10D回收之第四研磨帶供給機構（無圖示）；作為第三研磨頭活動機構之第三研磨頭平移移動機構（無圖示）與第三研磨頭傾斜移動機構（無圖示）；及作為第四研磨頭活動機構之第四研磨頭平移移動機構（無圖示）與第四研磨頭傾斜移動機構（無圖示）。The polishing device of this embodiment further includes: a third polishing tape supply mechanism (not shown) that supplies the third polishing tape 2C to the third polishing head 10C and recovers it from the third polishing head 10C; and the fourth polishing tape 2D. A fourth polishing tape supply mechanism (not shown) that is supplied to and recovered from the fourth polishing head 10D; a third polishing head translation moving mechanism (not shown) as the third polishing head movable mechanism; and The third grinding head tilt movement mechanism (not shown); and the fourth grinding head translation movement mechanism (not shown) and the fourth grinding head tilt movement mechanism (not shown) as the fourth grinding head movable mechanism.

第三研磨頭平移移動機構係以使第三研磨頭10C沿著基板W之半徑方向平移移動的方式而構成。第四研磨頭平移移動機構係以使第四研磨頭10D沿著基板W之半徑方向平移移動的方式而構成。第三研磨頭傾斜移動機構係以使第三研磨頭10C對保持載台7之基板保持面傾斜移動的方式而構成。第四研磨頭傾斜移動機構係以使第四研磨頭10D對保持載台7之基板保持面傾斜移動的方式而構成。The third polishing head translational movement mechanism is configured to translately move the third polishing head 10C along the radial direction of the substrate W. The fourth polishing head translational movement mechanism is configured to translately move the fourth polishing head 10D along the radial direction of the substrate W. The third polishing head tilt movement mechanism is configured to tilt the third polishing head 10C with respect to the substrate holding surface of the holding stage 7 . The fourth polishing head tilt movement mechanism is configured to tilt the fourth polishing head 10D with respect to the substrate holding surface of the holding stage 7 .

第三研磨頭10C及第四研磨頭10D具有與第一研磨頭10A基本上相同之構成。第三研磨帶供給機構及第四研磨帶供給機構具有與第一研磨帶供給機構20A基本上相同之構成。第三研磨頭平移移動機構及第四研磨頭平移移動機構具有與第一研磨頭平移移動機構40A基本上相同之構成。第三研磨頭傾斜移動機構及第四研磨頭傾斜移動機構具有與第一研磨頭傾斜移動機構50A基本上相同之構成。因此，省略此等之重複說明。The third polishing head 10C and the fourth polishing head 10D have basically the same structure as the first polishing head 10A. The third polishing tape supply mechanism and the fourth polishing tape supply mechanism have basically the same structure as the first polishing tape supply mechanism 20A. The third grinding head translation movement mechanism and the fourth grinding head translation movement mechanism have basically the same structure as the first grinding head translation movement mechanism 40A. The third grinding head tilt movement mechanism and the fourth grinding head tilt movement mechanism have basically the same structure as the first grinding head tilt movement mechanism 50A. Therefore, repeated explanations are omitted.

如圖14所示，連結第一研磨頭10A與基板W之中心O1的線L1、與連結第二研磨頭10B與基板W之中心O1的線L2形成之角度α1在0度至90度的範圍內。連結第三研磨頭10C與基板W之中心O1的線L3、與連結第四研磨頭10D與基板W之中心O1的線L4形成之角度α2在0度至90度的範圍內。As shown in FIG. 14 , the angle α1 formed by the line L1 connecting the first polishing head 10A and the center O1 of the substrate W and the line L2 connecting the second polishing head 10B and the center O1 of the substrate W is in the range of 0 to 90 degrees. within. The angle α2 formed by the line L3 connecting the third polishing head 10C and the center O1 of the substrate W and the line L4 connecting the fourth polishing head 10D and the center O1 of the substrate W is in the range of 0 to 90 degrees.

第一研磨頭10A與第四研磨頭10D通過基板W之中心O1，且就與指定之旋轉軸心Cr正交的線Lc對稱配置。第二研磨頭10B與第三研磨頭10C通過基板W之中心O1，且就與指定之旋轉軸心Cr正交的線Lc對稱配置。不過，第一研磨頭10A、第二研磨頭10B、第三研磨頭10C、及第四研磨頭10D之位置關係不限於本實施形態，只要是角度α1及角度α2在0度至90度的範圍內。The first polishing head 10A and the fourth polishing head 10D pass through the center O1 of the substrate W and are symmetrically arranged with respect to the line Lc orthogonal to the designated rotation axis Cr. The second polishing head 10B and the third polishing head 10C pass through the center O1 of the substrate W and are symmetrically arranged with respect to the line Lc orthogonal to the designated rotation axis Cr. However, the positional relationship between the first polishing head 10A, the second polishing head 10B, the third polishing head 10C, and the fourth polishing head 10D is not limited to this embodiment, as long as the angle α1 and the angle α2 are in the range of 0 degrees to 90 degrees. within.

圖15A至圖15D係顯示第一研磨頭10A～第四研磨頭10D之研磨動作的一種實施形態圖。本實施形態係一邊以第一研磨頭10A及第四研磨頭10D研磨基板W之頂邊緣部E1，一邊以第二研磨頭10B及第三研磨頭10C研磨基板W之底邊緣部E2。15A to 15D are diagrams showing an embodiment of the grinding operation of the first to fourth grinding heads 10A to 10D. In this embodiment, the top edge E1 of the substrate W is polished with the first polishing head 10A and the fourth polishing head 10D, while the bottom edge E2 of the substrate W is polished with the second polishing head 10B and the third polishing head 10C.

由於圖15A及圖15B所示之第一研磨頭10A及第二研磨頭10B的研磨動作，與參照圖6A及圖6B所說明之第一研磨頭10A及第二研磨頭10B的研磨動作相同，因此省略其重複之說明。Since the grinding operations of the first grinding head 10A and the second grinding head 10B shown in FIGS. 15A and 15B are the same as the grinding operations of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 6A and 6B, Therefore, repeated explanations are omitted.

藉由第三研磨頭10C研磨之第三研磨區域係基板W之底邊緣部E2內的第五研磨點P5與第六研磨點P6之間的區域。第五研磨點P5在比第六研磨點P6遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第四研磨頭10D研磨之第四研磨區域係基板W之頂邊緣部E1內的第七研磨點P7與第八研磨點P8之間的區域。第七研磨點P7在比第八研磨點P8接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。The third polishing area polished by the third polishing head 10C is the area between the fifth polishing point P5 and the sixth polishing point P6 in the bottom edge E2 of the substrate W. The fifth polishing point P5 is located farther from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the sixth polishing point P6. The fourth polishing area polished by the fourth polishing head 10D is the area between the seventh polishing point P7 and the eighth polishing point P8 in the top edge E1 of the substrate W. The seventh polishing point P7 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the eighth polishing point P8.

本實施形態藉由第三研磨頭10C研磨之第三研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域位於相反側。亦即，第三研磨區域兩端之第五研磨點P5、第六研磨點P6；與第四研磨區域兩端之第七研磨點P7、第八研磨點P8位於相反側。第五研磨點P5從基板W之中心O1（亦即，指定之旋轉軸心Cr）的距離與第八研磨點P8從基板W之中心O1（亦即，指定之旋轉軸心Cr）的距離相等。第六研磨點P6從基板W之中心O1（亦即，指定之旋轉軸心Cr）的距離、與第七研磨點P7從基板W之中心O1（亦即，指定之旋轉軸心Cr）的距離相等。亦即，第三研磨區域與第四研磨區域在基板W之半徑方向的長度相等。In this embodiment, the third polishing area polished by the third polishing head 10C and the fourth polishing area polished by the fourth polishing head 10D are located on the opposite side. That is, the fifth grinding point P5 and the sixth grinding point P6 at both ends of the third grinding area are on the opposite side to the seventh grinding point P7 and eighth grinding point P8 at both ends of the fourth grinding area. The distance of the fifth grinding point P5 from the center O1 of the substrate W (that is, the designated rotation axis Cr) is equal to the distance of the eighth grinding point P8 from the center O1 of the substrate W (that is, the designated rotation axis Cr). . The distance of the sixth polishing point P6 from the center O1 of the substrate W (that is, the designated rotation axis Cr), and the distance of the seventh polishing point P7 from the center O1 of the substrate W (that is, the designated rotation axis Cr) equal. That is, the lengths of the third polishing area and the fourth polishing area in the radial direction of the substrate W are equal.

如圖15C所示，第三研磨頭10C將第三研磨帶2C按壓於第五研磨點P5而開始研磨第三研磨區域。其次，在以第三研磨頭10C將第三研磨帶2C按壓於基板W的狀態下，藉由第三研磨頭平移移動機構使第三研磨頭10C在第三方向D3移動至第六研磨點P6。第三方向D3在基板W之半徑方向係接近基板W之中心O1的方向，亦即係指定之旋轉軸心Cr的方向。As shown in FIG. 15C , the third polishing head 10C presses the third polishing belt 2C against the fifth polishing point P5 to start polishing the third polishing area. Next, with the third polishing head 10C pressing the third polishing tape 2C against the substrate W, the third polishing head translational movement mechanism moves the third polishing head 10C in the third direction D3 to the sixth polishing point P6 . The third direction D3 is a direction close to the center O1 of the substrate W in the radial direction of the substrate W, that is, the direction of the designated rotation axis Cr.

再者，在以第三研磨頭10C將第三研磨帶2C按壓於基板W的狀態下，藉由第三研磨頭平移移動機構使第三研磨頭10C在第四方向D4移動至第五研磨點P5。第四方向D4係在基板W之半徑方向中，從基板W之中心O1離開的方向。亦即，係從指定之旋轉軸心Cr離開的方向。第三方向D3與第四方向D4係相反方向。藉此，第三研磨頭10C往返1次研磨第三研磨區域。一種實施形態亦可進一步使第三研磨頭10C在第三方向D3移動，反覆進行圖15C所示之研磨動作，而複數次往返研磨第三研磨區域。或是，亦可不使第三研磨頭10C在第四方向D4移動，而單程部分研磨第三研磨區域。Furthermore, in a state where the third polishing head 10C presses the third polishing tape 2C against the substrate W, the third polishing head translation movement mechanism moves the third polishing head 10C to the fifth polishing point in the fourth direction D4. P5. The fourth direction D4 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W. That is, it is the direction away from the designated rotation axis Cr. The third direction D3 and the fourth direction D4 are opposite directions. Thereby, the third polishing head 10C polishes the third polishing area in one round trip. In one embodiment, the third grinding head 10C can be further moved in the third direction D3 to repeatedly perform the grinding action shown in FIG. 15C to grind the third grinding area back and forth a plurality of times. Alternatively, the third polishing area may be partially polished in a single pass without moving the third polishing head 10C in the fourth direction D4.

如圖15D所示，第四研磨頭10D將第四研磨帶2D按壓於第七研磨點P7開始研磨第四研磨區域。其次，在以第四研磨頭10D將第四研磨帶2D按壓於基板W的狀態下，藉由第四研磨頭平移移動機構使第四研磨頭10D在第四方向D4移動至第八研磨點P8。第四方向D4與參照圖15C所說明之第四方向D4相同。As shown in FIG. 15D , the fourth polishing head 10D presses the fourth polishing belt 2D to the seventh polishing point P7 to start polishing the fourth polishing area. Next, with the fourth polishing head 10D pressing the fourth polishing tape 2D against the substrate W, the fourth polishing head translation movement mechanism moves the fourth polishing head 10D in the fourth direction D4 to the eighth polishing point P8 . The fourth direction D4 is the same as the fourth direction D4 described with reference to FIG. 15C .

再者，在以第四研磨頭10D將第四研磨帶2D按壓於基板W的狀態下，藉由第四研磨頭平移移動機構使第四研磨頭10D在第三方向D3移動至第七研磨點P7。第三方向D3與參照圖15C所說明之第三方向D3相同。藉此，第四研磨頭10D往返1次研磨第四研磨區域。一種實施形態亦可進一步使第四研磨頭10D在第四方向D4移動，反覆進行圖15D所示之研磨動作，而往返複數次研磨第四研磨區域。或是，亦可不使第四研磨頭10D在第三方向D3移動，而單程部分研磨第四研磨區域。Furthermore, in a state where the fourth polishing belt 2D is pressed against the substrate W by the fourth polishing head 10D, the fourth polishing head 10D is moved to the seventh polishing point in the third direction D3 by the fourth polishing head translation movement mechanism. P7. The third direction D3 is the same as the third direction D3 described with reference to FIG. 15C . Thereby, the fourth polishing head 10D polishes the fourth polishing area in one round trip. In one embodiment, the fourth polishing head 10D can be further moved in the fourth direction D4 to repeatedly perform the polishing action shown in FIG. 15D to polish the fourth polishing area back and forth several times. Alternatively, it is also possible to partially grind the fourth grinding area in a single pass without moving the fourth grinding head 10D in the third direction D3.

藉由第一研磨頭10A研磨之第一研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致，藉由第二研磨頭10B研磨之第二研磨區域、與藉由第三研磨頭10C研磨之第三研磨區域實質地一致。此外，第一方向D1與第四方向D4實質地一致，第二方向D2與第三方向D3實質地一致。The first polishing area polished by the first polishing head 10A is substantially consistent with the fourth polishing area polished by the fourth polishing head 10D, and the second polishing area polished by the second polishing head 10B is substantially the same as the fourth polishing area polished by the fourth polishing head 10D. The third grinding areas of the three grinding heads 10C are substantially the same. In addition, the first direction D1 and the fourth direction D4 are substantially consistent, and the second direction D2 and the third direction D3 are substantially consistent.

第一研磨頭10A～第四研磨頭10D同時研磨頂邊緣部E1之第一研磨區域、第四研磨區域；與底邊緣部E2之第二研磨區域、第三研磨區域。第一研磨頭10A將第一研磨帶2A按壓於第一研磨點P1開始研磨第一研磨區域之時機；與第二研磨頭10B將第二研磨帶2B按壓於第三研磨點P3開始研磨第二研磨區域之時機；第三研磨頭10C將第三研磨帶2C按壓於第五研磨點P5開始研磨第三研磨區域之時機；與第四研磨頭10D將第四研磨帶2D按壓於第七研磨點P7開始研磨第四研磨區域的時機亦可同時。The first grinding head 10A to the fourth grinding head 10D simultaneously grind the first grinding area and the fourth grinding area of the top edge E1 and the second grinding area and the third grinding area of the bottom edge E2. The first grinding head 10A presses the first grinding belt 2A to the first grinding point P1 to start grinding the first grinding area; and the second grinding head 10B presses the second grinding belt 2B to the third grinding point P3 to start grinding the second grinding area. The timing of the grinding area; the third grinding head 10C presses the third grinding belt 2C to the fifth grinding point P5 and starts grinding the third grinding area; and the fourth grinding head 10D presses the fourth grinding belt 2D to the seventh grinding point. The timing of P7 starting to grind the fourth grinding area can also be at the same time.

第一研磨頭10A、第二研磨頭10B、第三研磨頭10C、及第四研磨頭10D之移動速度相等，第一研磨頭10A到達第二研磨點P2之時機、第二研磨頭10B到達第四研磨點P4之時機、第三研磨頭10C到達第六研磨點P6之時機、與第四研磨頭10D到達第八研磨點P8之時機亦可同時。再者，第一研磨頭10A、第二研磨頭10B、第三研磨頭10C、及第四研磨頭10D折回，而第一研磨頭10A返回第一研磨點P1之時機、第二研磨頭10B返回第三研磨點P3之時機、第三研磨頭10C返回第五研磨點P5之時機、與第四研磨頭10D返回第七研磨點P7之時機亦可同時。再者，研磨結束時，使第一研磨頭10A之按壓構件12從基板W離開的時機、使第二研磨頭10B之按壓構件12從基板W離開的時機、使第三研磨頭10C之按壓構件12從基板W離開的時機、與使第四研磨頭10D之按壓構件12從基板W離開的時機亦可同時。The moving speeds of the first grinding head 10A, the second grinding head 10B, the third grinding head 10C, and the fourth grinding head 10D are equal. When the first grinding head 10A reaches the second grinding point P2, the second grinding head 10B reaches the second grinding point P2. The timing of the fourth grinding point P4, the timing of the third grinding head 10C reaching the sixth grinding point P6, and the timing of the fourth grinding head 10D reaching the eighth grinding point P8 can also be simultaneous. Furthermore, the first grinding head 10A, the second grinding head 10B, the third grinding head 10C, and the fourth grinding head 10D are turned back, and when the first grinding head 10A returns to the first grinding point P1, the second grinding head 10B returns. The timing of the third grinding point P3, the timing of the third grinding head 10C returning to the fifth grinding point P5, and the timing of the fourth grinding head 10D returning to the seventh grinding point P7 can also be simultaneous. Furthermore, when polishing is completed, the timing of causing the pressing member 12 of the first polishing head 10A to separate from the substrate W, the timing of causing the pressing member 12 of the second polishing head 10B to separate from the substrate W, and the timing of causing the pressing member 12 of the third polishing head 10C to separate. The timing of separating the pressing member 12 of the fourth polishing head 10D from the substrate W may be the same as the timing of separating the pressing member 12 of the fourth polishing head 10D from the substrate W.

採用本實施形態時，因為係以第一研磨頭10A與第四研磨頭10D同時研磨頂邊緣部E1，並以第二研磨頭10B與第三研磨頭10C同時研磨底邊緣部E2，所以，與參照圖6A至圖9B所說明之以第一研磨頭10A與第二研磨頭10B之2個研磨頭研磨頂邊緣部E1與底邊緣部E2時比較，可進一步縮短整體研磨處理時間。When this embodiment is adopted, the top edge portion E1 is polished simultaneously with the first polishing head 10A and the fourth polishing head 10D, and the bottom edge portion E2 is polished simultaneously with the second polishing head 10B and the third polishing head 10C. Therefore, Compared with the case where the top edge E1 and the bottom edge E2 are polished with two polishing heads of the first polishing head 10A and the second polishing head 10B as described with reference to FIGS. 6A to 9B , the overall polishing processing time can be further shortened.

此外，因為第三研磨區域與第四研磨區域位於相反側，第三研磨頭10C與第四研磨頭10D係一邊在作為相反方向之第三方向D3及第四方向D4移動，一邊研磨基板W，所以第三研磨頭10C引起之按壓力與第四研磨頭10D引起之按壓力係賦予相反方向。因此，與第一研磨頭10A與第二研磨頭10B引起之按壓力同樣地，第三研磨頭10C與第四研磨頭10D引起之按壓力不致過大賦予基板W的周緣部，可抑制基板W翹曲。In addition, because the third polishing area and the fourth polishing area are located on opposite sides, the third polishing head 10C and the fourth polishing head 10D polish the substrate W while moving in the third direction D3 and the fourth direction D4, which are opposite directions. Therefore, the pressing force caused by the third polishing head 10C and the pressing force caused by the fourth polishing head 10D are given in opposite directions. Therefore, like the pressing force exerted by the first polishing head 10A and the second polishing head 10B, the pressing force exerted by the third polishing head 10C and the fourth polishing head 10D is not excessively applied to the peripheral portion of the substrate W, and warpage of the substrate W can be suppressed. song.

再者，採用本實施形態時，與第一研磨頭10A與第二研磨頭10B同樣地，因為第三研磨頭10C與第四研磨頭10D係一邊在作為相反方向之第三方向D3及第四方向D4移動，一邊研磨基板W，所以可防止在使第三研磨頭10C與第四研磨頭10D從基板W之頂邊緣部側與底邊緣部側的兩側按壓而移動時，基板W係與第三研磨頭10C及第四研磨頭10D一起移動，對基板保持部5基板位置偏移。Furthermore, when this embodiment is adopted, like the first polishing head 10A and the second polishing head 10B, the third polishing head 10C and the fourth polishing head 10D are in the third direction D3 and the fourth direction D3 which are opposite directions. The substrate W is polished while moving in the direction D4. Therefore, when the third polishing head 10C and the fourth polishing head 10D are pressed and moved from both sides of the top edge side and the bottom edge side of the substrate W, the substrate W is prevented from being in contact with the substrate W. The third polishing head 10C and the fourth polishing head 10D move together to shift the substrate position of the substrate holding part 5 .

以第一研磨頭10A～第四研磨頭10D之4個研磨頭同時研磨基板W之頂邊緣部E1及底邊緣部E2時，鄰接之第一研磨頭10A與第二研磨頭10B的研磨動作，可適用參照圖6A至圖9B所說明之第一研磨頭10A與第二研磨頭10B的4個類型之研磨動作。此外，鄰接之第三研磨頭10C與第四研磨頭10D之研磨動作可適用參照圖6A至圖9B所說明之第一研磨頭10A與第二研磨頭10B的4個類型之研磨動作。When the top edge E1 and the bottom edge E2 of the substrate W are simultaneously polished by four polishing heads from the first polishing head 10A to the fourth polishing head 10D, the polishing actions of the adjacent first polishing head 10A and the second polishing head 10B, Four types of grinding operations of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 6A to 9B are applicable. In addition, the grinding operations of the adjacent third grinding head 10C and the fourth grinding head 10D can be applied to the four types of grinding operations of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 6A to 9B .

圖16A至圖18D係顯示此種第一研磨頭10A～第四研磨頭10D之研磨動作的其他實施形態之一例圖。由於不特別說明之此等實施形態的構成及動作與參照圖15A至圖15D所說明之實施形態相同，因此省略其重複之說明。由於圖16A、圖17A、及圖18A所示之第一研磨頭10A的研磨動作與圖6A所示之第一研磨頭10A的研磨動作相同，圖16B、圖17B、及圖18B所示之第二研磨頭10B的研磨動作與圖6B所示之第二研磨頭10B的研磨動作相同，因此省略其重複之說明。FIGS. 16A to 18D are diagrams showing examples of other embodiments of the grinding operations of the first to fourth grinding heads 10A to 10D. Since the structures and operations of these embodiments that are not particularly described are the same as those of the embodiments described with reference to FIGS. 15A to 15D , repeated descriptions thereof are omitted. Since the grinding action of the first grinding head 10A shown in FIG. 16A, FIG. 17A, and FIG. 18A is the same as the grinding action of the first grinding head 10A shown in FIG. 6A, the first grinding head 10A shown in FIG. 16B, FIG. 17B, and FIG. 18B The grinding action of the second polishing head 10B is the same as the polishing action of the second polishing head 10B shown in FIG. 6B , so the repeated description is omitted.

圖16A至圖16D所示之實施形態，藉由第三研磨頭10C研磨之第三研磨區域係底邊緣部E2，而第五研磨點P5及第六研磨點P6在底邊緣部E2內。第五研磨點P5在比第六研磨點P6接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第四研磨頭10D研磨之第四研磨區域係頂邊緣部E1，而第七研磨點P7及第八研磨點P8在頂邊緣部E1內。第七研磨點P7在比第八研磨點P8遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。第三方向D3在基板W之半徑方向，係從基板W之中心O1離開的方向，亦即從指定之旋轉軸心Cr離開的方向。第四方向D4在基板W之半徑方向，係接近基板W之中心O1的方向，亦即係接近指定之旋轉軸心Cr的方向。In the embodiment shown in FIGS. 16A to 16D , the third polishing area polished by the third polishing head 10C is the bottom edge E2, and the fifth polishing point P5 and the sixth polishing point P6 are within the bottom edge E2. The fifth polishing point P5 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the sixth polishing point P6. The fourth grinding area polished by the fourth grinding head 10D is the top edge portion E1, and the seventh grinding point P7 and the eighth grinding point P8 are within the top edge portion E1. The seventh polishing point P7 is located further away from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the eighth polishing point P8. The third direction D3 is in the radial direction of the substrate W and is the direction away from the center O1 of the substrate W, that is, the direction away from the designated rotation axis Cr. The fourth direction D4 is in the radial direction of the substrate W, and is a direction close to the center O1 of the substrate W, that is, a direction close to the designated rotation axis Cr.

藉由第一研磨頭10A研磨之第一研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致，藉由第二研磨頭10B研磨之第二研磨區域、與藉由第三研磨頭10C研磨之第三研磨區域實質地一致。此外，第一方向D1與第三方向D3實質地一致，第二方向D2與第四方向D4實質地一致。The first polishing area polished by the first polishing head 10A is substantially consistent with the fourth polishing area polished by the fourth polishing head 10D, and the second polishing area polished by the second polishing head 10B is substantially the same as the fourth polishing area polished by the fourth polishing head 10D. The third grinding areas of the three grinding heads 10C are substantially the same. In addition, the first direction D1 and the third direction D3 are substantially consistent, and the second direction D2 and the fourth direction D4 are substantially consistent.

圖17A至圖17D所示之實施形態，藉由第三研磨頭10C研磨之第三研磨區域係頂邊緣部E1，而第五研磨點P5及第六研磨點P6在頂邊緣部E1內。第五研磨點P5在比第六研磨點P6接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第四研磨頭10D研磨之第四研磨區域係底邊緣部E2，而第七研磨點P7及第八研磨點P8在底邊緣部E2內。第七研磨點P7在比第八研磨點P8遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。第三方向D3在基板W之半徑方向，係從基板W之中心O1離開的方向，亦即係從指定之旋轉軸心Cr離開的方向。第四方向D4在基板W之半徑方向，係接近基板W之中心O1的方向，亦即係接近指定之旋轉軸心Cr的方向。In the embodiment shown in FIGS. 17A to 17D , the third polishing area polished by the third polishing head 10C is the top edge E1, and the fifth polishing point P5 and the sixth polishing point P6 are within the top edge E1. The fifth polishing point P5 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the sixth polishing point P6. The fourth grinding area grinded by the fourth grinding head 10D is the bottom edge portion E2, and the seventh grinding point P7 and the eighth grinding point P8 are within the bottom edge portion E2. The seventh polishing point P7 is located further away from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the eighth polishing point P8. The third direction D3 is in the radial direction of the substrate W, and is the direction away from the center O1 of the substrate W, that is, the direction away from the designated rotation axis Cr. The fourth direction D4 is in the radial direction of the substrate W, and is a direction close to the center O1 of the substrate W, that is, a direction close to the designated rotation axis Cr.

藉由第一研磨頭10A研磨之第一研磨區域、與藉由第三研磨頭10C研磨之第三研磨區域實質地一致，藉由第二研磨頭10B研磨之第二研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致。此外，第一方向D1與第三方向D3實質地一致，第二方向D2與第四方向D4實質地一致。The first polishing area polished by the first polishing head 10A is substantially consistent with the third polishing area polished by the third polishing head 10C, and the second polishing area polished by the second polishing head 10B is substantially the same as the third polishing area polished by the third polishing head 10C. The fourth grinding areas of the four grinding heads 10D are substantially the same. In addition, the first direction D1 and the third direction D3 are substantially consistent, and the second direction D2 and the fourth direction D4 are substantially consistent.

圖18A至圖18D所示之實施形態，藉由第三研磨頭10C研磨之第三研磨區域係頂邊緣部E1，而第五研磨點P5及第六研磨點P6在頂邊緣部E1內。第五研磨點P5在比第六研磨點P6遠離基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。藉由第四研磨頭10D研磨之第四研磨區域係底邊緣部E2，而第七研磨點P7及第八研磨點P8在底邊緣部E2內。第七研磨點P7在比第八研磨點P8接近基板W之中心O1（亦即，指定之旋轉軸心Cr）的位置。第三方向D3在基板W之半徑方向，係接近基板W之中心O1的方向，亦即係接近指定之旋轉軸心Cr的方向。第四方向D4在基板W之半徑方向，係從基板W之中心O1離開的方向，亦即係從指定之旋轉軸心Cr離開的方向。In the embodiment shown in FIGS. 18A to 18D , the third polishing area polished by the third polishing head 10C is the top edge E1, and the fifth polishing point P5 and the sixth polishing point P6 are within the top edge E1. The fifth polishing point P5 is located farther from the center O1 of the substrate W (that is, the designated rotation axis Cr) than the sixth polishing point P6. The fourth grinding area grinded by the fourth grinding head 10D is the bottom edge portion E2, and the seventh grinding point P7 and the eighth grinding point P8 are within the bottom edge portion E2. The seventh polishing point P7 is located closer to the center O1 of the substrate W (that is, the designated rotation axis Cr) than the eighth polishing point P8. The third direction D3 is in the radial direction of the substrate W and is a direction close to the center O1 of the substrate W, that is, a direction close to the designated rotation axis Cr. The fourth direction D4 is in the radial direction of the substrate W, and is the direction away from the center O1 of the substrate W, that is, the direction away from the designated rotation axis Cr.

藉由第一研磨頭10A研磨之第一研磨區域、與藉由第三研磨頭10C研磨之第三研磨區域實質地一致，藉由第二研磨頭10B研磨之第二研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致。此外，第一方向D1與第四方向D4實質地一致，第二方向D2與第三方向D3實質地一致。The first polishing area polished by the first polishing head 10A is substantially consistent with the third polishing area polished by the third polishing head 10C, and the second polishing area polished by the second polishing head 10B is substantially the same as the third polishing area polished by the third polishing head 10C. The fourth grinding areas of the four grinding heads 10D are substantially the same. In addition, the first direction D1 and the fourth direction D4 are substantially consistent, and the second direction D2 and the third direction D3 are substantially consistent.

其次，說明使用第一研磨頭10A～第四研磨頭10D之4個研磨頭同時研磨基板W之斜角部B時的第一研磨頭10A～第四研磨頭10D之研磨動作。圖19A至圖19D係顯示研磨基板W之斜角部B時第一研磨頭10A～第四研磨頭10D之研磨動作的一種實施形態圖。本實施形態係以第一研磨頭10A～第四研磨頭10D同時研磨基板W之斜角部B。由於圖19A及圖19B所示之第一研磨頭10A及第二研磨頭10B的研磨動作，與參照圖10A及圖10B所說明之第一研磨頭10A及第二研磨頭10B的研磨動作相同，因此省略其重複之說明。Next, the polishing operation of the first polishing head 10A to the fourth polishing head 10D when the bevel portion B of the substrate W is simultaneously polished using four polishing heads 10A to 10D will be described. 19A to 19D are diagrams illustrating an embodiment of the polishing operation of the first polishing head 10A to the fourth polishing head 10D when polishing the bevel portion B of the substrate W. In this embodiment, the first to fourth polishing heads 10A to 10D simultaneously polish the bevel portion B of the substrate W. Since the grinding operations of the first grinding head 10A and the second grinding head 10B shown in FIGS. 19A and 19B are the same as the grinding operations of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 10A and 10B, Therefore, repeated explanations are omitted.

藉由第三研磨頭10C研磨之第三研磨區域係在基板W之斜角部B內的第五研磨點P5與第六研磨點P6之間的區域。而第五研磨點P5比第六研磨點P6在斜角部B中位於下側。藉由第四研磨頭10D研磨之第四研磨區域係基板W之斜角部B內的第七研磨點P7與第八研磨點P8之間的區域。第七研磨點P7比第八研磨點P8在斜角部B內位於上側。The third polishing area polished by the third polishing head 10C is the area between the fifth polishing point P5 and the sixth polishing point P6 in the bevel portion B of the substrate W. The fifth polishing point P5 is located lower than the sixth polishing point P6 in the bevel portion B. The fourth polishing area polished by the fourth polishing head 10D is the area between the seventh polishing point P7 and the eighth polishing point P8 in the bevel portion B of the substrate W. The seventh polishing point P7 is located above the eighth polishing point P8 in the bevel portion B.

本實施形態係藉由第三研磨頭10C研磨之第三研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致。亦即，第五研磨點P5與第八研磨點P8實質地一致，第六研磨點P6與第七研磨點P7實質地一致。藉由第三研磨頭10C開始研磨之第三研磨區域兩端中的一端之第五研磨點P5、與藉由第四研磨頭10D開始研磨之第四研磨區域兩端中的一端之第七研磨點P7在斜角部B中位於相反側。此外，第三研磨區域兩端中之另一端的第六研磨點P6、與第四研磨區域兩端中之另一端的第八研磨點P8在斜角部B中位於相反側。In this embodiment, the third polishing area polished by the third polishing head 10C and the fourth polishing area polished by the fourth polishing head 10D are substantially the same. That is, the fifth polishing point P5 substantially coincides with the eighth polishing point P8, and the sixth polishing point P6 substantially coincides with the seventh polishing point P7. The fifth grinding point P5 at one end of the third grinding area where grinding is started by the third grinding head 10C, and the seventh grinding point P5 at one of the two ends of the fourth grinding area where grinding is started by the fourth grinding head 10D Point P7 is located on the opposite side of the bevel portion B. In addition, the sixth polishing point P6 at the other end of the third polishing area and the eighth polishing point P8 at the other end of the fourth polishing area are located on opposite sides of the bevel portion B.

如圖19C所示，第三研磨頭10C將第三研磨帶2C按壓於第五研磨點P5開始研磨第三研磨區域。其次，在以第三研磨頭10C將第三研磨帶2C按壓於基板W的狀態下，藉由第三研磨頭傾斜移動機構使第三研磨頭10C在第三方向D3傾斜移動至第六研磨點P6。第三方向D3係從斜角部B之下側朝向上側的方向。As shown in FIG. 19C , the third polishing head 10C presses the third polishing belt 2C to the fifth polishing point P5 to start polishing the third polishing area. Next, with the third polishing head 10C pressing the third polishing tape 2C against the substrate W, the third polishing head tilt movement mechanism causes the third polishing head 10C to tilt in the third direction D3 to the sixth polishing point. P6. The third direction D3 is a direction from the lower side of the bevel portion B toward the upper side.

再者，在以第三研磨頭10C將第三研磨帶2C按壓於基板W的狀態下，藉由第三研磨頭傾斜移動機構使第三研磨頭10C在第四方向D4移動至第五研磨點P5。第四方向D4係從斜角部B之上側朝向下側的方向。第三方向D3與第四方向D4係相反方向。藉此，第三研磨頭10C往返1次研磨第三研磨區域。一種實施形態亦可進一步使第三研磨頭10C在第三方向D3傾斜移動，反覆進行圖19C所示之研磨動作，而複數次往返研磨第三研磨區域。或是，亦可不使第三研磨頭10C在第四方向D4傾斜移動，而單程部分研磨第三研磨區域。Furthermore, while the third polishing head 10C presses the third polishing tape 2C against the substrate W, the third polishing head 10C is moved to the fifth polishing point in the fourth direction D4 by the third polishing head tilt movement mechanism. P5. The fourth direction D4 is a direction from the upper side of the bevel portion B toward the lower side. The third direction D3 and the fourth direction D4 are opposite directions. Thereby, the third polishing head 10C polishes the third polishing area in one round trip. In one embodiment, the third grinding head 10C can be further tilted in the third direction D3 to repeatedly perform the grinding action shown in FIG. 19C to grind the third grinding area back and forth a plurality of times. Alternatively, the third polishing head 10C may not be tilted in the fourth direction D4, but the third polishing area may be partially polished in a single pass.

如圖19D所示，第四研磨頭10D將第四研磨帶2D按壓於第七研磨點P7開始研磨第四研磨區域。其次，在以第四研磨頭10D將第四研磨帶2D按壓於基板W的狀態下，藉由第四研磨頭傾斜移動機構使第四研磨頭10D在第四方向D4傾斜移動至第八研磨點P8。第四方向D4與參照圖19C所說明之第四方向D4相同。As shown in FIG. 19D , the fourth polishing head 10D presses the fourth polishing belt 2D to the seventh polishing point P7 to start polishing the fourth polishing area. Next, with the fourth polishing head 10D pressing the fourth polishing tape 2D against the substrate W, the fourth polishing head tilt movement mechanism causes the fourth polishing head 10D to tilt in the fourth direction D4 to the eighth polishing point. P8. The fourth direction D4 is the same as the fourth direction D4 described with reference to FIG. 19C .

再者，在以第四研磨頭10D將第四研磨帶2D按壓於基板W的狀態下，藉由第四研磨頭傾斜移動機構使第四研磨頭10D在第三方向D3傾斜移動至第七研磨點P7。第三方向D3與參照圖19C所說明之第三方向D3相同。藉此，第四研磨頭10D往返1次研磨第四研磨區域。一種實施形態亦可進一步使第四研磨頭10D在第四方向D4傾斜移動，反覆進行圖19D所示之研磨動作，而複數次往返研磨第四研磨區域。或是，亦可不使第四研磨頭10D在第三方向D3傾斜移動，而單程部分研磨第四研磨區域。Furthermore, in a state where the fourth polishing belt 2D is pressed against the substrate W by the fourth polishing head 10D, the fourth polishing head 10D is tilted in the third direction D3 to the seventh polishing position by the fourth polishing head tilt movement mechanism. Click P7. The third direction D3 is the same as the third direction D3 described with reference to FIG. 19C . Thereby, the fourth polishing head 10D polishes the fourth polishing area in one round trip. In one embodiment, the fourth grinding head 10D can be further tilted in the fourth direction D4 to repeatedly perform the grinding action shown in FIG. 19D to grind the fourth grinding area back and forth a plurality of times. Alternatively, the fourth grinding head 10D may not be tilted in the third direction D3, but the fourth grinding area may be partially ground in a single pass.

藉由第一研磨頭10A研磨之第一研磨區域、藉由第二研磨頭10B研磨之第二研磨區域、藉由第三研磨頭10C研磨之第三研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致。此外，第一方向D1與第四方向D4實質地一致，第二方向D2與第三方向D3實質地一致。The first polishing area polished by the first polishing head 10A, the second polishing area polished by the second polishing head 10B, the third polishing area polished by the third polishing head 10C, and the fourth polishing head 10D The fourth grinding area of grinding is substantially the same. In addition, the first direction D1 and the fourth direction D4 are substantially consistent, and the second direction D2 and the third direction D3 are substantially consistent.

第一研磨頭10A～第四研磨頭10D同時研磨斜角部B之第一研磨區域～第四研磨區域。第一研磨頭10A將第一研磨帶2A按壓於第一研磨點P1開始研磨第一研磨區域之時機；第二研磨頭10B將第二研磨帶2B按壓於第三研磨點P3開始研磨第二研磨區域之時機；第三研磨頭10C將第三研磨帶2C按壓於第五研磨點P5開始研磨第三研磨區域之時機；與第四研磨頭10D將第四研磨帶2D按壓於第七研磨點P7開始研磨第四研磨區域之時機亦可同時。The first to fourth polishing heads 10A to 10D simultaneously polish the first to fourth polishing areas of the bevel portion B. The first grinding head 10A presses the first grinding belt 2A to the first grinding point P1 to start grinding the first grinding area; the second grinding head 10B presses the second grinding belt 2B to the third grinding point P3 to start grinding the second grinding area. The timing of the area; the third grinding head 10C presses the third grinding belt 2C to the fifth grinding point P5 and starts grinding the third grinding area; and the fourth grinding head 10D presses the fourth grinding belt 2D to the seventh grinding point P7 The timing of starting to grind the fourth grinding area can also be at the same time.

第一研磨頭10A、第二研磨頭10B、第三研磨頭10C、及第四研磨頭10D之傾斜移動速度相等，第一研磨頭10A到達第二研磨點P2之時機、第二研磨頭10B到達第四研磨點P4之時機、第三研磨頭10C到達第六研磨點P6之時機、與第四研磨頭10D到達第八研磨點P8的時機亦可同時。再者，第一研磨頭10A、第二研磨頭10B、第三研磨頭10C、及第四研磨頭10D折回，第一研磨頭10A返回第一研磨點P1之時機、第二研磨頭10B返回第三研磨點P3之時機、第三研磨頭10C返回第五研磨點P5之時機、與第四研磨頭10D返回第七研磨點P7之時機亦可同時。再者，研磨結束時，使第一研磨頭10A之按壓構件12從基板W離開的時機、使第二研磨頭10B之按壓構件12從基板W離開的時機、使第三研磨頭10C之按壓構件12從基板W離開的時機、與使第四研磨頭10D之按壓構件12從基板W離開的時機亦可同時。The tilting speeds of the first grinding head 10A, the second grinding head 10B, the third grinding head 10C, and the fourth grinding head 10D are equal. When the first grinding head 10A reaches the second grinding point P2, the second grinding head 10B arrives. The timing of the fourth grinding point P4, the timing of the third grinding head 10C reaching the sixth grinding point P6, and the timing of the fourth grinding head 10D reaching the eighth grinding point P8 may also be at the same time. Furthermore, the first grinding head 10A, the second grinding head 10B, the third grinding head 10C, and the fourth grinding head 10D are turned back. When the first grinding head 10A returns to the first grinding point P1, the second grinding head 10B returns to the first grinding point P1. The timing of the third grinding point P3, the timing of the third grinding head 10C returning to the fifth grinding point P5, and the timing of the fourth grinding head 10D returning to the seventh grinding point P7 can also be simultaneous. Furthermore, when polishing is completed, the timing of causing the pressing member 12 of the first polishing head 10A to separate from the substrate W, the timing of causing the pressing member 12 of the second polishing head 10B to separate from the substrate W, and the timing of causing the pressing member 12 of the third polishing head 10C to separate. The timing of separating 12 from the substrate W may be the same as the timing of separating the pressing member 12 of the fourth polishing head 10D from the substrate W.

採用本實施形態時，因為以第一研磨頭10A～第四研磨頭10D同時研磨斜角部B，所以與參照圖10A至圖11B所說明之以第一研磨頭10A與第二研磨頭10B之2個研磨頭研磨斜角部B時比較，可進一步縮短整體研磨處理時間。In this embodiment, since the bevel portion B is ground simultaneously with the first polishing head 10A to the fourth polishing head 10D, it is different from the first polishing head 10A and the second polishing head 10B described with reference to FIGS. 10A to 11B . When comparing the two grinding heads for grinding the bevel part B, the overall grinding processing time can be further shortened.

此外，藉由第三研磨頭10C開始研磨之第五研磨點P5與藉由第四研磨頭10D開始研磨之第七研磨點P7在斜角部B中位於相反側，因為第三研磨頭10C與第四研磨頭10D一邊在作為相反方向之第三方向D3及第四方向D4傾斜移動，一邊研磨基板W，所以第三研磨頭10C引起之按壓力與第四研磨頭10D引起之按壓力對斜角部B賦予相反方向。因此，與第一研磨頭10A與第二研磨頭10B引起之按壓力同樣地，第三研磨頭10C與第四研磨頭10D引起之按壓力不致過大賦予基板W的周緣部，可抑制基板W翹曲。In addition, the fifth grinding point P5 where grinding is started by the third grinding head 10C and the seventh grinding point P7 where grinding is started by the fourth grinding head 10D are located on opposite sides in the bevel portion B because the third grinding head 10C and The fourth polishing head 10D polishes the substrate W while tilting in the third direction D3 and the fourth direction D4, which are opposite directions. Therefore, the pressing force exerted by the third polishing head 10C and the pressing force exerted by the fourth polishing head 10D are oblique. Corner B gives the opposite direction. Therefore, like the pressing force exerted by the first polishing head 10A and the second polishing head 10B, the pressing force exerted by the third polishing head 10C and the fourth polishing head 10D is not excessively applied to the peripheral portion of the substrate W, and warpage of the substrate W can be suppressed. song.

以第一研磨頭10A～第四研磨頭10D之4個研磨頭同時研磨基板W的斜角部B時，鄰接之第一研磨頭10A與第二研磨頭10B的研磨動作，可適用參照圖10A至圖13B所說明之第一研磨頭10A與第二研磨頭10B的4個類型之研磨動作。此外，鄰接之第三研磨頭10C與第四研磨頭10D之研磨動作，可適用參照圖10A至圖13B所說明之第一研磨頭10A與第二研磨頭10B的4個類型之研磨動作。When the four polishing heads of the first polishing head 10A to the fourth polishing head 10D are used to simultaneously polish the bevel portion B of the substrate W, the polishing action of the adjacent first polishing head 10A and the second polishing head 10B can be applied. Refer to FIG. 10A The four types of grinding actions of the first grinding head 10A and the second grinding head 10B are explained in FIG. 13B . In addition, the grinding operations of the adjacent third grinding head 10C and the fourth grinding head 10D can be applied to the four types of grinding operations of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 10A to 13B .

圖20A至圖22D係顯示此種第一研磨頭10A～第四研磨頭10D之研磨動作的其他實施形態之一例圖。由於不特別說明之此等實施形態的構成及動作與參照圖19A至圖19D所說明之實施形態相同，因此省略其重複之說明。20A to 22D are diagrams showing examples of other embodiments of the grinding operations of the first to fourth grinding heads 10A to 10D. Since the structures and operations of these embodiments that are not particularly described are the same as those of the embodiments described with reference to FIGS. 19A to 19D , repeated descriptions thereof are omitted.

由於圖20A及圖20B所示之第一研磨頭10A及第二研磨頭10B的研磨動作，與參照圖10A及圖10B所說明之第一研磨頭10A及第二研磨頭10B的研磨動作相同，因此省略其重複之說明。圖20A至圖20D所示之實施形態，藉由第三研磨頭10C研磨之第三研磨區域係斜角部B，而第五研磨點P5及第六研磨點P6在斜角部B內。第五研磨點P5比第六研磨點P6在斜角部B中位於上側。藉由第四研磨頭10D研磨之第四研磨區域係斜角部B，而第七研磨點P7及第八研磨點P8在斜角部B內。第七研磨點P7比第八研磨點P8在斜角部B中位於下側。第三方向D3係從斜角部B之上側朝向下側的方向。第四方向D4係從斜角部B之下側朝向上側的方向。Since the grinding operations of the first grinding head 10A and the second grinding head 10B shown in FIGS. 20A and 20B are the same as the grinding operations of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 10A and 10B , Therefore, repeated explanations are omitted. In the embodiment shown in FIGS. 20A to 20D , the third polishing area polished by the third polishing head 10C is the bevel portion B, and the fifth polishing point P5 and the sixth polishing point P6 are within the bevel portion B. The fifth polishing point P5 is located above the sixth polishing point P6 in the bevel portion B. The fourth grinding area polished by the fourth grinding head 10D is the bevel portion B, and the seventh grinding point P7 and the eighth grinding point P8 are within the bevel portion B. The seventh polishing point P7 is located lower than the eighth polishing point P8 in the bevel portion B. The third direction D3 is a direction from the upper side of the bevel portion B toward the lower side. The fourth direction D4 is a direction from the lower side of the bevel portion B toward the upper side.

藉由第一研磨頭10A研磨之第一研磨區域、藉由第二研磨頭10B研磨之第二研磨區域、藉由第三研磨頭10C研磨之第三研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致。此外，第一方向D1與第三方向D3實質地一致，第二方向D2與第四方向D4實質地一致。The first polishing area polished by the first polishing head 10A, the second polishing area polished by the second polishing head 10B, the third polishing area polished by the third polishing head 10C, and the fourth polishing head 10D The fourth grinding area of grinding is substantially the same. In addition, the first direction D1 and the third direction D3 are substantially consistent, and the second direction D2 and the fourth direction D4 are substantially consistent.

由於圖21A及圖22A所示之第一研磨頭10A的研磨動作、及圖21B及圖22B所示之第二研磨頭10B的研磨動作，與參照圖12A所說明之第一研磨頭10A的研磨動作、及參照圖12B所說明之第二研磨頭10B的研磨動作相同，因此省略其重複之說明。Because the grinding action of the first grinding head 10A shown in FIGS. 21A and 22A and the grinding action of the second grinding head 10B shown in FIGS. 21B and 22B are different from the grinding action of the first grinding head 10A described with reference to FIG. 12A The operation is the same as the grinding operation of the second polishing head 10B described with reference to FIG. 12B , and therefore a repeated description thereof is omitted.

圖21A至圖21D所示之實施形態，藉由第三研磨頭10C研磨之第三研磨區域係斜角部B中的下側區域，而第五研磨點P5及第六研磨點P6在斜角部B內。第五研磨點P5比第六研磨點P6在斜角部B中位於下側，第六研磨點P6位於斜角部B之中央。藉由第四研磨頭10D研磨之第四研磨區域係斜角部B中的上側區域，而第七研磨點P7及第八研磨點P8在斜角部B內。第七研磨點P7比第八研磨點P8在斜角部B中位於上側，第八研磨點P8位於斜角部B之中央。第三方向D3係從斜角部B之下側朝向上側的方向。第四方向D4係從斜角部B之上側朝向下側的方向。In the embodiment shown in FIGS. 21A to 21D , the third polishing area polished by the third polishing head 10C is the lower area in the bevel part B, and the fifth polishing point P5 and the sixth polishing point P6 are in the bevel part B. In Part B. The fifth polishing point P5 is located lower than the sixth polishing point P6 in the bevel portion B, and the sixth polishing point P6 is located in the center of the bevel portion B. The fourth grinding area polished by the fourth grinding head 10D is the upper area in the bevel portion B, and the seventh grinding point P7 and the eighth grinding point P8 are in the bevel portion B. The seventh polishing point P7 is located above the eighth polishing point P8 in the bevel portion B, and the eighth polishing point P8 is located in the center of the bevel portion B. The third direction D3 is a direction from the lower side of the bevel portion B toward the upper side. The fourth direction D4 is a direction from the upper side of the bevel portion B toward the lower side.

藉由第一研磨頭10A研磨之第一研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致；藉由第二研磨頭10B研磨之第二研磨區域、與藉由第三研磨頭10C研磨之第三研磨區域實質地一致。此外，第一方向D1與第四方向D4實質地一致，第二方向D2與第三方向D3實質地一致。The first polishing area polished by the first polishing head 10A is substantially consistent with the fourth polishing area polished by the fourth polishing head 10D; the second polishing area polished by the second polishing head 10B is substantially the same as the fourth polishing area polished by the fourth polishing head 10D. The third grinding areas of the three grinding heads 10C are substantially the same. In addition, the first direction D1 and the fourth direction D4 are substantially consistent, and the second direction D2 and the third direction D3 are substantially consistent.

圖22A至圖22D所示之實施形態，藉由第三研磨頭10C研磨之第三研磨區域係斜角部B中之上側區域，而第五研磨點P5及第六研磨點P6在斜角部B內。第五研磨點P5比第六研磨點P6在斜角部B中位於上側，第六研磨點P6位於斜角部B之中央。藉由第四研磨頭10D研磨之第四研磨區域係斜角部B中之下側區域，而第七研磨點P7及第八研磨點P8在斜角部B內。第七研磨點P7比第八研磨點P8在斜角部B中位於下側，第八研磨點P8位於斜角部B之中央。第三方向D3係從斜角部B之上側朝向下側的方向。第四方向D4係從斜角部B之下側朝向上側的方向。In the embodiment shown in FIGS. 22A to 22D , the third polishing area polished by the third polishing head 10C is the upper area in the bevel part B, and the fifth polishing point P5 and the sixth polishing point P6 are in the bevel part B. Within B. The fifth polishing point P5 is located above the sixth polishing point P6 in the bevel portion B, and the sixth polishing point P6 is located in the center of the bevel portion B. The fourth grinding area polished by the fourth grinding head 10D is the lower area in the bevel portion B, and the seventh grinding point P7 and the eighth grinding point P8 are in the bevel portion B. The seventh polishing point P7 is located lower than the eighth polishing point P8 in the bevel portion B, and the eighth polishing point P8 is located in the center of the bevel portion B. The third direction D3 is a direction from the upper side of the bevel portion B toward the lower side. The fourth direction D4 is a direction from the lower side of the bevel portion B toward the upper side.

藉由第一研磨頭10A研磨之第一研磨區域、與藉由第三研磨頭10C研磨之第三研磨區域實質地一致，藉由第二研磨頭10B研磨之第二研磨區域、與藉由第四研磨頭10D研磨之第四研磨區域實質地一致。此外，第一方向D1與第三方向D3實質地一致，第二方向D2與第四方向D4實質地一致。The first polishing area polished by the first polishing head 10A is substantially consistent with the third polishing area polished by the third polishing head 10C, and the second polishing area polished by the second polishing head 10B is substantially the same as the third polishing area polished by the third polishing head 10C. The fourth grinding areas of the four grinding heads 10D are substantially the same. In addition, the first direction D1 and the third direction D3 are substantially consistent, and the second direction D2 and the fourth direction D4 are substantially consistent.

參照圖15A至圖22D所說明之第一研磨頭10A～第四研磨頭10D的研磨動作係一例，一種實施形態係亦可第一研磨頭10A與第二研磨頭10B適用參照圖6A至圖9B所說明之第一研磨頭10A與第二研磨頭10B的研磨動作，而同時研磨基板W之頂邊緣部E1及底邊緣部E2，與此動作同時進行，第三研磨頭10C與第四研磨頭10D適用參照圖10A至圖13B所說明之第一研磨頭10A與第二研磨頭10B的研磨動作，而同時研磨基板W之斜角部B。如此，第一研磨頭10A～第四研磨頭10D可組合圖6A至圖13B所示之研磨動作來實施。The polishing operations of the first polishing head 10A to the fourth polishing head 10D described with reference to FIGS. 15A to 22D are an example. An embodiment is also applicable to the first polishing head 10A and the second polishing head 10B. Refer to FIGS. 6A to 9B The described polishing action of the first polishing head 10A and the second polishing head 10B simultaneously polishes the top edge E1 and the bottom edge E2 of the substrate W. Simultaneously with this action, the third polishing head 10C and the fourth polishing head 10C simultaneously polish the top edge E1 and the bottom edge E2 of the substrate W. 10D applies the polishing action of the first polishing head 10A and the second polishing head 10B described with reference to FIGS. 10A to 13B to simultaneously polish the bevel portion B of the substrate W. In this way, the first grinding head 10A to the fourth grinding head 10D can be implemented in combination with the grinding actions shown in FIGS. 6A to 13B .

圖23A及圖23B係用於說明以4個研磨頭研磨基板W之周緣部的又其他實施形態圖。由於不特別說明之本實施形態的研磨裝置之構成與參照圖14所說明的研磨裝置之構成相同，因此省略其重複之說明。本實施形態在第一研磨頭10A～第四研磨頭10D中，係以第一研磨頭10A及第二研磨頭10B同時研磨基板W之周緣部後，再以其他之第三研磨頭10C及第四研磨頭10D同時研磨基板W之周緣部。23A and 23B are diagrams illustrating yet another embodiment of polishing the peripheral portion of the substrate W using four polishing heads. Since the configuration of the polishing device of this embodiment is the same as that of the polishing device described with reference to FIG. 14 , a repeated description thereof will be omitted. In this embodiment, among the first to fourth polishing heads 10A to 10D, after the first polishing head 10A and the second polishing head 10B simultaneously polish the peripheral portion of the substrate W, the third polishing head 10C and the third polishing head 10B are then used. The four polishing heads 10D polish the peripheral edge of the substrate W simultaneously.

圖23A顯示藉由第一研磨頭10A及第二研磨頭10B研磨基板W之周緣部的情形。第一研磨頭10A配置於可研磨基板W之頂邊緣部E1的位置，第二研磨頭10B配置於可研磨基板W之底邊緣部E2的位置。第三研磨頭10C及第四研磨頭10D則配置於基板W之半徑方向外側的非研磨位置。FIG. 23A shows how the peripheral edge of the substrate W is polished by the first polishing head 10A and the second polishing head 10B. The first polishing head 10A is disposed at a position capable of polishing the top edge E1 of the substrate W, and the second polishing head 10B is disposed at a position capable of polishing the bottom edge E2 of the substrate W. The third polishing head 10C and the fourth polishing head 10D are arranged at a non-polishing position outside the substrate W in the radial direction.

供給至第一研磨頭10A之第一研磨帶2A、及供給至第二研磨頭10B之第二研磨帶2B在研磨面上具有粗的磨粒。第一研磨頭10A及第二研磨頭10B分別同時粗研磨基板W之頂邊緣部E1內的第一研磨區域及基板W之底邊緣部E2內的第二研磨區域。由於第一研磨頭10A及第二研磨頭10B之研磨動作，與參照圖6A及圖6B所說明之第一研磨頭10A及第二研磨頭10B的研磨動作相同，因此省略其重複之說明。The first polishing tape 2A supplied to the first polishing head 10A and the second polishing tape 2B supplied to the second polishing head 10B have coarse abrasive grains on the polishing surface. The first polishing head 10A and the second polishing head 10B roughly polish the first polishing area in the top edge E1 of the substrate W and the second polishing area in the bottom edge E2 of the substrate W simultaneously. Since the grinding operations of the first grinding head 10A and the second grinding head 10B are the same as those of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 6A and 6B , repeated descriptions thereof are omitted.

然後，如圖23B所示，第一研磨頭10A及第二研磨頭10B配置於基板W之半徑方向外側的非研磨位置。第三研磨頭10C配置於可研磨基板W之底邊緣部E2的位置，第四研磨頭10D配置於可研磨基板W之頂邊緣部E1的位置。供給至第三研磨頭10C之第三研磨帶2C、及供給至第四研磨頭10D之第四研磨帶2D在研磨面具有細的磨粒。Then, as shown in FIG. 23B , the first polishing head 10A and the second polishing head 10B are arranged at non-polishing positions on the outside of the substrate W in the radial direction. The third polishing head 10C is disposed at a position where the bottom edge E2 of the substrate W can be polished, and the fourth polishing head 10D is disposed at a position where the top edge E1 of the substrate W can be polished. The third polishing tape 2C supplied to the third polishing head 10C and the fourth polishing tape 2D supplied to the fourth polishing head 10D have fine abrasive grains on the polishing surface.

第三研磨頭10C及第四研磨頭10D分別同時加工研磨基板W之底邊緣部E2內的第三研磨區域及基板W之頂邊緣部E1內的第四研磨區域。由於第三研磨頭10C及第四研磨頭10D之研磨動作，與參照圖8A及圖8B所說明之第一研磨頭10A及第二研磨頭10B的研磨動作相同，因此省略其重複之說明。第三研磨頭10C研磨已經被第二研磨頭10B研磨過之第二研磨區域。亦即，第三研磨區域與第二研磨區域係相同區域。第四研磨頭10D研磨已經被第一研磨頭10A研磨過之第一研磨區域。亦即，第四研磨區域與第一研磨區域係相同區域。The third polishing head 10C and the fourth polishing head 10D simultaneously process the third polishing area in the bottom edge E2 of the polishing substrate W and the fourth polishing area in the top edge E1 of the substrate W respectively. Since the grinding operations of the third grinding head 10C and the fourth grinding head 10D are the same as the grinding operations of the first grinding head 10A and the second grinding head 10B described with reference to FIGS. 8A and 8B , repeated descriptions thereof are omitted. The third grinding head 10C grinds the second grinding area that has been grinded by the second grinding head 10B. That is, the third polishing area and the second polishing area are the same area. The fourth grinding head 10D grinds the first grinding area that has been grinded by the first grinding head 10A. That is, the fourth polishing area and the first polishing area are the same area.

採用本實施形態時，藉由第一研磨頭10A與第二研磨頭10B之2個研磨頭粗研磨頂邊緣部E1之第一研磨區域與底邊緣部E2的第二研磨區域後，立刻藉由第三研磨頭10C與第四研磨頭10D之2個研磨頭加工研磨頂邊緣部E1之第一研磨區域（第四研磨區域）與底邊緣部E2之第二研磨區域（第三研磨區域）。因此，與以1個研磨頭研磨頂邊緣部E1及底邊緣部E2時比較，可縮短整體研磨處理時間。再者，因為不需要從具有用於粗研磨之粗的磨粒之研磨帶更換成具有用於加工研磨之細的磨粒之研磨帶，所以可縮短整體研磨處理時間。When this embodiment is adopted, after the first polishing area of the top edge part E1 and the second polishing area of the bottom edge part E2 are roughly polished by the two polishing heads of the first polishing head 10A and the second polishing head 10B, The two grinding heads of the third grinding head 10C and the fourth grinding head 10D process and grind the first grinding area (the fourth grinding area) of the top edge part E1 and the second grinding area (the third grinding area) of the bottom edge part E2. Therefore, compared with the case where one polishing head is used to polish the top edge portion E1 and the bottom edge portion E2, the overall polishing processing time can be shortened. Furthermore, since there is no need to change the polishing belt having coarse abrasive grains for rough grinding to a polishing belt having fine abrasive grains for process grinding, the overall grinding process time can be shortened.

此外，第一研磨區域與第二研磨區域位於相反側，因為第一研磨頭10A與第二研磨頭10B一邊在作為相反方向之第一方向D1及第二方向D2移動，一邊研磨基板W，從而在相反方向賦予第一研磨頭10A引起之按壓力與第二研磨頭10B引起之按壓力。因此，如參照圖24之說明，第一研磨頭10A與第二研磨頭10B引起之按壓力不致過大賦予基板W的周緣部，可抑制基板W之翹曲。即使關於第三研磨頭10C與第四研磨頭10D對第三研磨區域與第四研磨區域之研磨仍可獲得同樣效果。In addition, the first polishing area and the second polishing area are located on opposite sides, because the first polishing head 10A and the second polishing head 10B polish the substrate W while moving in the first direction D1 and the second direction D2 which are opposite directions, so that The pressing force caused by the first polishing head 10A and the pressing force caused by the second polishing head 10B are applied in opposite directions. Therefore, as explained with reference to FIG. 24 , the pressing force caused by the first polishing head 10A and the second polishing head 10B is not excessively applied to the peripheral portion of the substrate W, and warpage of the substrate W can be suppressed. Even if the third grinding head 10C and the fourth grinding head 10D grind the third grinding area and the fourth grinding area, the same effect can still be obtained.

再者，採用本實施形態時，因為第一研磨頭10A與第二研磨頭10B一邊在作為相反方向之第一方向D1及第二方向D2移動，一邊研磨基板W，所以可防止在使第一研磨頭10A與第二研磨頭10B從基板W之頂邊緣部側與底邊緣部側的兩側按壓而移動時，基板W與第一研磨頭10A及第二研磨頭10B一起移動，對基板保持部5基板位置偏移。即使關於第三研磨頭10C與第四研磨頭10D對第三研磨區域與第四研磨區域之研磨仍可獲得同樣效果。Furthermore, in this embodiment, since the first polishing head 10A and the second polishing head 10B polish the substrate W while moving in the first direction D1 and the second direction D2 which are opposite directions, it is possible to prevent the first polishing head 10A and the second polishing head 10B from polishing the substrate W. When the polishing head 10A and the second polishing head 10B are pressed and moved from both sides of the top edge side and the bottom edge side of the substrate W, the substrate W moves together with the first polishing head 10A and the second polishing head 10B to hold the substrate W. Part 5 substrate position deviation. Even if the third grinding head 10C and the fourth grinding head 10D grind the third grinding area and the fourth grinding area, the same effect can still be obtained.

第一研磨頭10A與第二研磨頭10B之研磨動作、及第三研磨頭10C與第四研磨頭10D之研磨動作不限於本實施形態，亦可係參照圖6A至圖9B所說明之頂邊緣部E1及底邊緣部E2的研磨動作之任何一種類型。其他實施形態係第一研磨頭10A與第二研磨頭10B之研磨動作、及第三研磨頭10C與第四研磨頭10D之研磨動作亦可適用於研磨基板W之斜角部B的情況。例如，第一研磨頭10A與第二研磨頭10B之研磨動作、及第三研磨頭10C與第四研磨頭10D之研磨動作亦可係參照圖10A及圖10B所說明之斜角部B的研磨動作。The grinding action of the first grinding head 10A and the second grinding head 10B, and the grinding action of the third grinding head 10C and the fourth grinding head 10D are not limited to this embodiment, and may also be based on the top edge explained with reference to FIGS. 6A to 9B Any type of grinding action of the part E1 and the bottom edge part E2. In other embodiments, the polishing action of the first polishing head 10A and the second polishing head 10B, and the polishing action of the third polishing head 10C and the fourth polishing head 10D can also be applied to polishing the bevel portion B of the substrate W. For example, the grinding operations of the first grinding head 10A and the second grinding head 10B, and the grinding operations of the third grinding head 10C and the fourth grinding head 10D can also be based on the grinding of the bevel portion B illustrated in FIGS. 10A and 10B action.

上述實施形態之研磨裝置亦可具備除了第一研磨頭10A～第四研磨頭10D之外，還進一步具備2個以上之研磨頭的6個以上的研磨頭。The polishing device of the above embodiment may further include six or more polishing heads including two or more polishing heads in addition to the first polishing head 10A to the fourth polishing head 10D.

上述實施形態係以本發明所屬之技術領域中的具有通常知識者可實施本發明為目的而記載者。本發明所屬之技術領域中的具有通常知識者當然可形成上述實施形態之各種變化例，本發明之技術性思想亦可適用於其他實施形態。因此，本發明不限定於記載之實施形態，而係在按照藉由申請專利範圍所定義之技術性思想而定的最廣範圍作解釋者。 ［產業上之可利用性］ The above-mentioned embodiments are described so that a person having ordinary knowledge in the technical field to which the present invention belongs can implement the present invention. Of course, those with ordinary knowledge in the technical field to which the present invention belongs can form various variations of the above-described embodiments, and the technical ideas of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is to be interpreted in the broadest scope according to the technical ideas defined by the patent claims. [Industrial availability]

本發明可利用於研磨晶圓等基板之周緣部的研磨方法及研磨裝置。The present invention can be used in a polishing method and polishing device for polishing the peripheral edge of a substrate such as a wafer.

2A:第一研磨帶 2B:第二研磨帶 2C:第三研磨帶 2D:第四研磨帶 5:基板保持部 7:保持載台 8:軸桿 9:保持載台驅動機構 10A:第一研磨頭 10B:第二研磨頭 10C:第三研磨頭 10D:第四研磨頭 12:按壓構件 15:空氣汽缸（驅動機構） 18:研磨頭支撐構件 20A:第一研磨帶供給機構 20B:第二研磨帶供給機構 21:帶捲出捲軸 22:帶捲收捲軸 24,25,26,27:導輥 28:捲軸座(reel base) 31:下側供給噴嘴 32:上側供給噴嘴 40A:第一研磨頭平移移動機構 40B:第二研磨頭平移移動機構 41:活動板 43:連結構件 44:導軌 46:連結軸桿 47:空氣汽缸（驅動機構） 48:底板 50A:第一研磨頭傾斜移動機構 50B:第二研磨頭傾斜移動機構 52:曲柄臂 53:臂旋轉裝置 80:動作控制部 80a:記憶裝置 80b:演算裝置 102A,102B:研磨帶 110A,110B:研磨頭 B:斜角部 B1:上側傾斜面 B2:下側傾斜面 B3:側部 Cr:旋轉軸心 D1:第一方向 D2:第二方向 D3:第三方向 D4:第四方向 E1:頂邊緣部 E2:底邊緣部 L1,L2:線 O1:中心 P1～P8:第一～第八研磨點 W:基板 α1,α2:角度 2A: First grinding belt 2B: Second grinding belt 2C: The third grinding belt 2D: The fourth grinding belt 5:Substrate holding part 7: Keep the stage 8: Shaft 9: Keep the stage driving mechanism 10A: First grinding head 10B: Second grinding head 10C: The third grinding head 10D: The fourth grinding head 12: Press component 15:Air cylinder (driving mechanism) 18:Grinding head support component 20A: First grinding tape supply mechanism 20B: Second grinding belt supply mechanism 21: Take out the reel 22: With winding reel 24,25,26,27: Guide roller 28:reel base 31: Lower side supply nozzle 32: Upper supply nozzle 40A: First grinding head translation moving mechanism 40B: Second grinding head translation moving mechanism 41:movable board 43:Connecting components 44: Guide rail 46:Connecting shaft 47:Air cylinder (driving mechanism) 48:Base plate 50A: First grinding head tilt movement mechanism 50B: Second grinding head tilt movement mechanism 52:Crank arm 53:Arm rotation device 80:Motion Control Department 80a: Memory device 80b: Calculation device 102A, 102B: Grinding belt 110A, 110B: Grinding head B:Bevel part B1: Upper inclined surface B2: Lower inclined surface B3: Side Cr: rotation axis D1: first direction D2: second direction D3: Third direction D4: The fourth direction E1: top edge E2: Bottom edge L1, L2: Line O1: Center P1～P8: The first to eighth grinding points W: substrate α1, α2: angle

圖1A係顯示基板之周緣部的放大剖面圖。 圖1B係顯示基板之周緣部的放大剖面圖。 圖2係顯示研磨裝置之一種實施形態的俯視圖。 圖3係從圖2之箭頭A指示的方向觀看之側視圖。 圖4係從圖2之箭頭B指示的方向觀看之側視圖。 圖5係顯示藉由第一研磨頭研磨基板之斜角部的情形圖。 圖6A係顯示第一研磨頭之研磨動作的一種實施形態圖。 圖6B係顯示第二研磨頭之研磨動作的一種實施形態圖。 圖7A係顯示第一研磨頭及第二研磨頭之研磨動作的其他實施形態圖。 圖7B係顯示第一研磨頭及第二研磨頭之研磨動作的其他實施形態圖。 圖8A係顯示第一研磨頭及第二研磨頭之研磨動作的其他實施形態圖。 圖8B係顯示第一研磨頭及第二研磨頭之研磨動作的其他實施形態圖。 圖9A係顯示第一研磨頭及第二研磨頭之研磨動作的其他實施形態圖。 圖9B係顯示第一研磨頭及第二研磨頭之研磨動作的其他實施形態圖。 圖10A係顯示研磨基板之斜角部時的第一研磨頭之研磨動作的一種實施形態圖。 圖10B係顯示研磨基板之斜角部時的第二研磨頭之研磨動作的一種實施形態圖。 圖11A係說明其他實施形態之第一研磨頭及第二研磨頭的研磨動作之圖。 圖11B係說明其他實施形態之第一研磨頭及第二研磨頭的研磨動作之圖。 圖12A係說明其他實施形態之第一研磨頭及第二研磨頭的研磨動作之圖。 圖12B係說明其他實施形態之第一研磨頭及第二研磨頭的研磨動作之圖。 圖13A係說明其他實施形態之第一研磨頭及第二研磨頭的研磨動作之圖。 圖13B係說明其他實施形態之第一研磨頭及第二研磨頭的研磨動作之圖。 圖14係顯示研磨裝置之其他實施形態的俯視圖。 圖15A係顯示第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖15B係顯示第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖15C係顯示第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖15D係顯示第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖16A係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖16B係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖16C係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖16D係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖17A係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖17B係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖17C係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖17D係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖18A係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖18B係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖18C係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖18D係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖19A係顯示研磨基板之斜角部時的第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖19B係顯示研磨基板之斜角部時的第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖19C係顯示研磨基板之斜角部時的第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖19D係顯示研磨基板之斜角部時的第一研磨頭～第四研磨頭之研磨動作的一種實施形態圖。 圖20A係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖20B係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖20C係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖20D係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖21A係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖21B係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖21C係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖21D係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖22A係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖22B係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖22C係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖22D係顯示第一研磨頭～第四研磨頭之研磨動作的其他實施形態之一例圖。 圖23A係用於說明以4個研磨頭研磨基板之周緣部的又其他實施形態圖。 圖23B係用於說明以4個研磨頭研磨基板之周緣部的又其他實施形態圖。 圖24係顯示以2個研磨頭研磨基板之周緣部的情形圖。 FIG. 1A is an enlarged cross-sectional view showing the peripheral portion of the substrate. FIG. 1B is an enlarged cross-sectional view showing the peripheral portion of the substrate. FIG. 2 is a top view showing an embodiment of the grinding device. FIG. 3 is a side view viewed from the direction indicated by arrow A in FIG. 2 . FIG. 4 is a side view viewed from the direction indicated by arrow B in FIG. 2 . FIG. 5 is a diagram showing the state of polishing the bevel portion of the substrate using the first polishing head. FIG. 6A is a diagram showing an embodiment of the grinding action of the first grinding head. FIG. 6B is a diagram showing an embodiment of the grinding action of the second grinding head. FIG. 7A is a diagram showing another embodiment of the grinding operation of the first grinding head and the second grinding head. FIG. 7B is a diagram showing another embodiment of the grinding operation of the first grinding head and the second grinding head. FIG. 8A is a diagram showing another embodiment of the grinding operation of the first grinding head and the second grinding head. FIG. 8B is a diagram showing another embodiment of the grinding operation of the first grinding head and the second grinding head. FIG. 9A is a diagram showing another embodiment of the grinding operation of the first grinding head and the second grinding head. FIG. 9B is a diagram showing another embodiment of the grinding operation of the first grinding head and the second grinding head. FIG. 10A is a diagram showing an embodiment of the polishing action of the first polishing head when polishing the bevel portion of the substrate. FIG. 10B is a diagram showing an embodiment of the polishing action of the second polishing head when polishing the bevel portion of the substrate. FIG. 11A is a diagram explaining the polishing operation of the first polishing head and the second polishing head according to another embodiment. FIG. 11B is a diagram explaining the polishing operation of the first polishing head and the second polishing head according to another embodiment. FIG. 12A is a diagram illustrating the polishing operation of the first polishing head and the second polishing head according to another embodiment. FIG. 12B is a diagram explaining the polishing operation of the first polishing head and the second polishing head according to another embodiment. FIG. 13A is a diagram illustrating the polishing operation of the first polishing head and the second polishing head according to another embodiment. FIG. 13B is a diagram explaining the polishing operation of the first polishing head and the second polishing head according to another embodiment. FIG. 14 is a top view showing another embodiment of the polishing device. FIG. 15A is an embodiment diagram showing the grinding operations of the first to fourth grinding heads. FIG. 15B is an embodiment diagram showing the grinding operations of the first to fourth grinding heads. FIG. 15C is an embodiment diagram showing the grinding operations of the first to fourth grinding heads. FIG. 15D is an embodiment diagram showing the grinding operations of the first to fourth grinding heads. FIG. 16A is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 16B is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 16C is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 16D is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 17A is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 17B is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 17C is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 17D is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 18A is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 18B is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 18C is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 18D is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 19A is an embodiment diagram showing the polishing operations of the first to fourth polishing heads when polishing the bevel portion of the substrate. FIG. 19B is an embodiment diagram showing the polishing operations of the first to fourth polishing heads when polishing the bevel portion of the substrate. 19C is an embodiment diagram showing the polishing operations of the first to fourth polishing heads when polishing the bevel portion of the substrate. 19D is a diagram showing an embodiment of the polishing operations of the first to fourth polishing heads when polishing the bevel portion of the substrate. FIG. 20A is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 20B is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 20C is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 20D is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 21A is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 21B is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 21C is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 21D is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 22A is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 22B is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 22C is an example diagram showing another embodiment of the grinding operation of the first to fourth grinding heads. FIG. 22D is an example diagram showing another embodiment of the grinding operations of the first to fourth grinding heads. FIG. 23A is a diagram illustrating yet another embodiment in which four polishing heads are used to polish the peripheral edge of the substrate. FIG. 23B is a diagram illustrating yet another embodiment in which four polishing heads are used to polish the peripheral edge of the substrate. FIG. 24 is a diagram showing the state of polishing the peripheral portion of the substrate using two polishing heads.

2A:第一研磨帶 2A: First grinding belt

10A:第一研磨頭 10A: First grinding head

12:按壓構件 12: Press component

Cr:旋轉軸心 Cr: rotation axis

D1:第一方向 D1: first direction

D2:第二方向 D2: second direction

E1:頂邊緣部 E1: top edge

O1:中心 O1: Center

P1,P2:第一~第二研磨點 P1, P2: first to second grinding points

W:基板 W: substrate

Claims (14)

一種研磨方法，係基板之周緣部之研磨方法，且包含： 藉由基板保持部保持前述基板，並使前述基板旋轉；及 一邊在以第一研磨頭將第一研磨帶按壓於前述周緣部之狀態下，使前述第一研磨頭在第一方向移動或傾斜移動，來研磨前述周緣部之第一研磨區域，一邊在以第二研磨頭將第二研磨帶按壓於前述周緣部之狀態下，使前述第二研磨頭在第二方向移動或傾斜移動，來研磨前述周緣部之第二研磨區域； 前述第一方向與前述第二方向係相反的方向。 A grinding method is a grinding method for the peripheral portion of a substrate, and includes: The substrate is held by a substrate holding portion and rotated; and While using the first polishing head to press the first polishing tape against the aforementioned peripheral portion, the first polishing head is moved or tilted in the first direction to polish the first polishing area of the aforementioned peripheral portion. The second polishing head presses the second polishing belt against the peripheral portion and moves the second polishing head in the second direction or tilts to polish the second polishing area of the peripheral portion; The aforementioned first direction and the aforementioned second direction are opposite directions. 如請求項1之研磨方法，其中前述第一研磨區域係前述周緣部之頂邊緣部及底邊緣部中的其中一方， 前述第二研磨區域係前述周緣部之頂邊緣部及底邊緣部中的另一方， 前述第一方向係在前述基板之半徑方向中，接近前述基板中心之方向及從前述基板中心離開的方向中之其中一方， 前述第二方向係在前述基板之半徑方向中，接近前述基板中心之方向及從前述基板中心離開的方向中之另一方。 The grinding method of claim 1, wherein the first grinding area is one of the top edge part and the bottom edge part of the peripheral edge part, The aforementioned second polishing area is the other one of the top edge portion and the bottom edge portion of the aforementioned peripheral portion, The first direction is one of a direction approaching the center of the substrate and a direction away from the center of the substrate in the radial direction of the substrate, The second direction is the other one of the radial direction of the substrate, a direction approaching the center of the substrate, and a direction away from the center of the substrate. 如請求項2之研磨方法，其中前述第一研磨頭之移動速度與前述第二研磨頭之移動速度相等。The grinding method of claim 2, wherein the moving speed of the first grinding head is equal to the moving speed of the second grinding head. 如請求項1之研磨方法，其中前述第一研磨區域及前述第二研磨區域係前述周緣部之斜角部， 前述第一方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側方向中的其中一方， 前述第二方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側方向中的另一方。 The grinding method of claim 1, wherein the first grinding area and the second grinding area are bevel portions of the peripheral portion, The first direction is one of a direction from the upper side of the bevel portion toward the lower side and a direction from the lower side of the bevel portion toward the upper side, The second direction is the other one of a direction from the upper side of the bevel portion toward the lower side and a direction from the lower side of the bevel portion toward the upper side. 如請求項4之研磨方法，其中前述第一研磨頭之傾斜移動速度與前述第二研磨頭之傾斜移動速度相等。The grinding method of claim 4, wherein the tilting speed of the first grinding head is equal to the tilting speed of the second grinding head. 如請求項1至5中任一項之研磨方法，其中連結前述第一研磨頭與前述基板中心之線，與連結前述第二研磨頭與前述基板中心之線形成的角度在0度至90度之範圍內。The polishing method according to any one of claims 1 to 5, wherein the angle formed by the line connecting the first polishing head and the center of the substrate and the line connecting the second polishing head and the center of the substrate is between 0 degrees and 90 degrees. within the range. 如請求項1至5中任一項之研磨方法，其中研磨前述第一研磨區域時，使前述第一研磨頭在前述第一方向移動或傾斜移動後，使前述第一研磨頭進一步在前述第二方向移動或傾斜移動而至少往返1次研磨前述第一研磨區域， 研磨前述第二研磨區域時，使前述第二研磨頭在前述第二方向移動或傾斜移動後，使前述第二研磨頭進一步在前述第一方向移動或傾斜移動而至少往返1次研磨前述第二研磨區域。 The grinding method according to any one of claims 1 to 5, wherein when grinding the first grinding area, the first grinding head is moved or tilted in the first direction, and then the first grinding head is further moved in the first direction. Move in two directions or tilt to grind the first grinding area back and forth at least once, When grinding the second grinding area, after the second grinding head is moved or tilted in the second direction, the second grinding head is further moved or tilted in the first direction to grind the second grinding head back and forth at least once. Grinding area. 一種研磨裝置，係基板之周緣部的研磨裝置，且具備： 基板保持部，其係保持前述基板，並使前述基板以指定之旋轉軸心為中心而旋轉； 第一研磨頭，其係將第一研磨帶按壓於前述周緣部； 第二研磨頭，其係將第二研磨帶按壓於前述周緣部； 第一研磨頭活動機構，其係使前述第一研磨頭移動或傾斜移動； 第二研磨頭活動機構，其係使前述第二研磨頭移動或傾斜移動；及 動作控制部，其係控制前述研磨裝置之動作； 前述動作控制部係以一邊在以前述第一研磨頭將前述第一研磨帶按壓於前述周緣部之狀態下，藉由前述第一研磨頭活動機構使前述第一研磨頭在第一方向移動或傾斜移動，來研磨前述周緣部之第一研磨區域，一邊在以前述第二研磨頭將前述第二研磨帶按壓於前述周緣部之狀態下，藉由前述第二研磨頭活動機構使前述第二研磨頭在第二方向移動或傾斜移動，來研磨前述周緣部之第二研磨區域的方式而構成， 前述第一方向與前述第二方向係相反的方向。 A grinding device is a grinding device for the peripheral edge of a substrate, and is provided with: a substrate holding portion that holds the substrate and allows the substrate to rotate around a designated rotation axis; a first grinding head that presses the first grinding belt against the aforementioned peripheral portion; a second polishing head that presses the second polishing belt against the aforementioned peripheral portion; The first grinding head movable mechanism is used to move or tilt the aforementioned first grinding head; The second grinding head movable mechanism is used to move or tilt the aforementioned second grinding head; and An action control part, which controls the action of the aforementioned grinding device; The operation control part is configured to move the first polishing head in the first direction through the first polishing head movable mechanism while the first polishing head presses the first polishing tape against the peripheral portion, or Tilt the movement to grind the first polishing area of the peripheral portion, and while pressing the second polishing tape against the peripheral portion with the second grinding head, the second grinding head movable mechanism makes the second grinding belt The grinding head is configured to move or tilt in the second direction to grind the second grinding area of the peripheral portion, The aforementioned first direction and the aforementioned second direction are opposite directions. 如請求項8之研磨裝置，其中前述第一研磨頭活動機構係使前述第一研磨頭平移移動之第一研磨頭平移移動機構， 前述第二研磨頭活動機構係使前述第二研磨頭平移移動之第二研磨頭平移移動機構， 前述第一研磨區域係前述周緣部之頂邊緣部及底邊緣部中的其中一方， 前述第二研磨區域係前述周緣部之頂邊緣部及底邊緣部中的另一方， 前述第一方向係接近前述指定之旋轉軸心的方向及從前述指定之旋轉軸心離開的方向中之其中一方， 前述第二方向係接近前述指定之旋轉軸心的方向及從前述指定之旋轉軸心離開的方向中之另一方。 The grinding device of claim 8, wherein the first grinding head movable mechanism is a first grinding head translation moving mechanism that moves the first grinding head in translation, The aforementioned second grinding head movable mechanism is a second grinding head translation moving mechanism that moves the aforementioned second grinding head in translation, The first polishing area is one of the top edge part and the bottom edge part of the peripheral edge part, The aforementioned second polishing area is the other one of the top edge portion and the bottom edge portion of the aforementioned peripheral portion, The aforementioned first direction is one of a direction approaching the aforementioned designated rotation axis and a direction away from the aforementioned designated rotation axis, The aforementioned second direction is the other of a direction approaching the aforementioned designated rotation axis and a direction away from the aforementioned designated rotation axis. 如請求項9之研磨裝置，其中前述第一研磨頭之移動速度與前述第二研磨頭之移動速度相等。The grinding device of claim 9, wherein the moving speed of the first grinding head is equal to the moving speed of the second grinding head. 如請求項8之研磨裝置，其中前述第一研磨頭活動機構係使前述第一研磨頭傾斜移動之第一研磨頭傾斜移動機構， 前述第二研磨頭活動機構係使前述第二研磨頭傾斜移動之第二研磨頭傾斜移動機構， 前述第一研磨區域及前述第二研磨區域係前述周緣部之斜角部， 前述第一方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側的方向中之其中一方， 前述第二方向係從前述斜角部之上側朝向下側的方向及從前述斜角部之下側朝向上側的方向中之另一方。 The grinding device of claim 8, wherein the first grinding head movable mechanism is a first grinding head tilting moving mechanism that tilts the first grinding head, The aforementioned second grinding head movable mechanism is a second grinding head tilt moving mechanism that tilts the aforementioned second grinding head, The aforementioned first polishing area and the aforementioned second polishing area are bevel portions of the aforementioned peripheral portion, The first direction is one of a direction from the upper side of the bevel portion to the lower side and a direction from the lower side of the bevel portion to the upper side, The second direction is the other one of a direction from the upper side of the bevel portion toward the lower side and a direction from the lower side of the bevel portion toward the upper side. 如請求項11之研磨裝置，其中前述第一研磨頭之傾斜移動速度與前述第二研磨頭之傾斜移動速度相等。The grinding device of claim 11, wherein the tilting speed of the first grinding head is equal to the tilting speed of the second grinding head. 如請求項8至12中任一項之研磨裝置，其中連結前述第一研磨頭與前述基板中心之線，與連結前述第二研磨頭與前述基板中心之線形成的角度在0度至90度之範圍內。The polishing device of any one of claims 8 to 12, wherein the angle formed by the line connecting the first polishing head and the center of the substrate and the line connecting the second polishing head and the center of the substrate is between 0 degrees and 90 degrees. within the range. 如請求項8至12中任一項之研磨裝置，其中前述動作控制部係以對前述第一研磨頭活動機構發出指令，使前述第一研磨頭在前述第一方向移動或傾斜移動後，使前述第一研磨頭進一步在前述第二方向移動或傾斜移動，而至少往返1次研磨前述第一研磨區域，並且對前述第二研磨頭活動機構發出指令，使前述第二研磨頭在前述第二方向移動或傾斜移動後，使前述第二研磨頭進一步在前述第一方向移動或傾斜移動，而至少往返1次研磨前述第二研磨區域之方式而構成。The grinding device as claimed in any one of claims 8 to 12, wherein the action control unit is configured to issue an instruction to the first grinding head movable mechanism to move the first grinding head in the first direction or to tilt the movement. The first grinding head further moves or tilts in the second direction to grind the first grinding area back and forth at least once, and issues a command to the second grinding head movable mechanism to cause the second grinding head to move in the second direction. After the directional movement or tilting movement, the second polishing head is further moved in the first direction or tilted to polish the second polishing area back and forth at least once.
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