TW202323475A - Adhesive film and adhesive film with dicing tape - Google Patents

Adhesive film and adhesive film with dicing tape Download PDF

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TW202323475A
TW202323475A TW112105913A TW112105913A TW202323475A TW 202323475 A TW202323475 A TW 202323475A TW 112105913 A TW112105913 A TW 112105913A TW 112105913 A TW112105913 A TW 112105913A TW 202323475 A TW202323475 A TW 202323475A
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adhesive film
adhesive
dicing tape
film
adhesive layer
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TW112105913A
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Chinese (zh)
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宍戶雄一郎
高本尚英
大西謙司
木村雄大
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日商日東電工股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2467/00—Presence of polyester
    • C09J2467/005—Presence of polyester in the release coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention provides an adhesive film suitable for suppressing generation of cracks caused by thermal stress in a formed adhesive layer, and an adhesive film with a dicing tape that has the aforementioned adhesive film. The adhesive film 10 of the present invention has a fracture resistance of 10 MPa or more and/or a breaking elongation rate of 60% or more in a tensile test performed on a cured adhesive film test piece having a width of 5 mm under conditions of an initial chuck distance of 10 mm, a temperature of 125 DEG C, and a tensile speed of 1 mm/sec. The adhesive film with a dicing tape X in accordance with the present invention includes the aforementioned adhesive film 10 and a dicing tape 20. The dicing tape 20 has a laminated structure including a substrate 21 and an adhesive layer 22. The adhesive film 10 is detachably adhered to the adhesive layer 22 of the dicing tape 20.

Description

接著膜及附有切晶帶之接著膜Adhesive film and adhesive film with dicing tape

本發明係關於一種可於半導體裝置之製造過程中使用之接著膜及附有切晶帶之接著膜。The present invention relates to an adhesive film and an adhesive film with a dicing tape that can be used in the manufacturing process of semiconductor devices.

於半導體裝置之製造過程中，於獲得伴隨有相當於黏晶用晶片之尺寸之接著膜之半導體晶片、即附有接著膜之半導體晶片時，有使用附有切晶帶之接著膜之情形。附有切晶帶之接著膜具有與作為加工對象之半導體晶圓對應之尺寸，例如具有：切晶帶，其包含基材及黏著劑層；及接著膜，其係與該黏著劑層側可剝離地密接。In the manufacturing process of semiconductor devices, when obtaining a semiconductor wafer with an adhesive film having a size equivalent to that of a die-bonding wafer, that is, a semiconductor wafer with an adhesive film, an adhesive film with a dicing tape may be used. The adhesive film with the dicing tape has a size corresponding to the semiconductor wafer as the processing object, for example, it has: a dicing tape, which includes a base material and an adhesive layer; and an adhesive film, which can be attached to the adhesive layer side. Peel off tightly.

作為使用附有切晶帶之接著膜獲得附有接著膜之半導體晶片之一種方法，已知有一種經過用以擴張附有切晶帶之接著膜中之切晶帶而割斷接著膜之步驟的方法。於該方法中，首先，於附有切晶帶之接著膜之接著膜上貼合作為工件之半導體晶圓。該半導體晶圓例如為以其後可與接著膜之割斷一起割斷而單片化為複數個半導體晶片之方式進行加工而成者。其次，為了以各者與半導體晶片密接之複數個接著膜小片自切晶帶上之接著膜產生之方式割斷該接著膜，保持半導體晶圓之附有切晶帶之接著膜之切晶帶向晶圓徑向擴張(割斷用擴張步驟)。於該擴張步驟中，於接著膜上之與半導體晶圓中之接著膜割斷部位對應之部位亦產生割斷，於附有切晶帶之接著膜或切晶帶上，半導體晶圓單片化為複數個半導體晶片。其次，例如經過清洗步驟後，各半導體晶片係和與其密接之相當於晶片之尺寸之接著膜一起，自切晶帶之下側由拾取機構之銷構件頂起後，自切晶帶上拾取。如此，獲得附有接著膜之半導體晶片。該附有接著膜之半導體晶片係經由該接著膜，藉由黏晶而固著於安裝基板等被附體。例如關於與以如上方式使用之附有切晶帶之接著膜及其所包含之接著膜相關的技術，例如記載於下述專利文獻1～3中。 [先前技術文獻] [專利文獻] As a method of obtaining a semiconductor wafer with an adhesive film using an adhesive film with a dicing tape, there is known a method of cutting the adhesive film through a step of expanding the dicing tape in the adhesive film with a dicing tape. method. In this method, first, a semiconductor wafer as a workpiece is bonded on the adhesive film with the dicing tape attached. The semiconductor wafer is, for example, processed so that it can be divided into a plurality of semiconductor wafers by cutting together with the cutting of the adhesive film thereafter. Secondly, in order to cut off the bonding film in such a way that a plurality of small pieces of the bonding film which are each in close contact with the semiconductor wafer are produced from the bonding film on the dicing tape, the orientation of the dicing tape of the bonding film with the dicing tape on the semiconductor wafer is kept. Radial expansion of the wafer (expansion step for dicing). In this expansion step, a part of the bonding film corresponding to the cutting part of the bonding film in the semiconductor wafer is also cut, and the semiconductor wafer is singulated on the bonding film or the dicing tape with the dicing tape attached. A plurality of semiconductor wafers. Secondly, for example, after the cleaning step, each semiconductor wafer is picked up from the crystal cutting belt after being lifted up by the pin member of the pick-up mechanism from the lower side of the crystal cutting belt, together with the adhesive film of the size equivalent to the wafer that is closely connected with it. In this way, a semiconductor wafer with an adhesive film was obtained. The semiconductor chip with the adhesive film is fixed to an attached body such as a mounting substrate by die bonding through the adhesive film. For example, the techniques related to the adhesive film with a dicing tape used as above and the adhesive film contained therein are described in, for example, Patent Documents 1 to 3 below. [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利特開2007-2173號公報 [專利文獻2]日本專利特開2010-177401號公報 [專利文獻3]日本專利特開2012-23161號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Document 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Document 3] Japanese Patent Laid-Open No. 2012-23161

[發明所欲解決之問題][Problem to be solved by the invention]

有對半導體晶片之黏晶用接著膜要求於由其形成之接著層中不易產生由熱應力所引起之龜裂，例如即便於經過特定之溫度循環試驗之情形時亦不易產生龜裂的情形。又，有接著膜越厚，則於由其形成之接著層中，越容易產生由熱應力所引起之龜裂之傾向。介於安裝基板與半導體晶片之間而將該等接合之接著層產生龜裂係於與該接著層接觸之安裝基板表面上之配線中可能會引起損傷、斷線，從而不佳。There is a requirement for the adhesive film for semiconductor wafers that cracks caused by thermal stress are not likely to occur in the adhesive layer formed from it, for example, cracks are not easy to occur even after passing a specific temperature cycle test. Also, the thicker the adhesive film is, the easier it is to generate cracks due to thermal stress in the adhesive layer formed therefrom. Cracks in the bonding layer interposed between the mounting substrate and the semiconductor chip to bond these may cause damage and disconnection in the wiring on the surface of the mounting substrate in contact with the bonding layer, which may be unfavorable.

本發明係基於如上所述之情況所想出者，其目的在於提供一種適於抑制所形成之接著層中由熱應力所引起之龜裂之產生的接著膜，及具備此種接著膜之附有切晶帶之接著膜。 [解決問題之技術手段] The present invention is conceived based on the above circumstances, and its object is to provide an adhesive film suitable for suppressing the generation of cracks caused by thermal stress in the formed adhesive layer, and an adhesive film with such an adhesive film. Adhesive film with cut crystal tape. [Technical means to solve the problem]

根據本發明之第1態樣，提供一種接著膜。該接著膜於在初始夾頭間距離10 mm、125℃及拉伸速度1 mm/秒之條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中，具有破斷強度10 MPa以上及/或破斷伸長率60%以上之耐破斷性。本接著膜於在上述條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中表現的破斷強度較佳為13 MPa以上，更佳為16 MPa以上，更佳為19 MPa以上，更佳為22 MPa以上。本接著膜於在上述條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中表現的破斷伸長率較佳為65%以上，更佳為70%以上，更佳為75%以上。此種構成之接著膜可用作黏晶用接著膜。又，此種構成之接著膜係於與切晶帶之黏著劑層側密接之形態中，可用於在半導體裝置之製造過程中獲得附有接著膜之半導體晶片。According to a first aspect of the present invention, an adhesive film is provided. The adhesive film has a breaking strength of 10 in the tensile test of a hardened adhesive film test piece with a width of 5 mm under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/sec. Breaking resistance above MPa and/or breaking elongation above 60%. The breaking strength of this adhesive film in a tensile test performed on a hardened adhesive film test piece with a width of 5 mm under the above conditions is preferably at least 13 MPa, more preferably at least 16 MPa, more preferably at least 19 MPa above, more preferably above 22 MPa. The elongation at break of the adhesive film in the tensile test performed on a hardened adhesive film test piece with a width of 5 mm under the above conditions is preferably 65% or more, more preferably 70% or more, and more preferably 75% %above. The adhesive film with such a structure can be used as an adhesive film for die bonding. In addition, the adhesive film of such a configuration is in a form of being in close contact with the adhesive layer side of the dicing tape, and can be used to obtain a semiconductor wafer with an adhesive film in the manufacturing process of a semiconductor device.

本發明者等人發現：於採用黏晶用接著膜，於初始夾頭間距離10 mm、125℃及拉伸速度1 mm/秒之條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中具有破斷強度10 MPa以上及/或破斷伸長率60%以上之耐破斷性的上述構成即便於該接著膜相對較厚之情形時，亦適於抑制由其形成之接著層中由熱應力所引起之龜裂之產生。例如如以下述實施例及比較例所示。The inventors of the present invention found that: using an adhesive film for die-bonding, under the conditions of an initial chuck distance of 10 mm, a temperature of 125°C, and a tensile speed of 1 mm/s, a hardened adhesive film test piece with a width of 5 mm was tested. In the tensile test, the above structure having a breaking strength of 10 MPa or more and/or a breaking elongation of 60% or more is suitable for suppressing the formation of the adhesive film even when the adhesive film is relatively thick. This is followed by the generation of cracks in the layer caused by thermal stress. For example, as shown in the following Examples and Comparative Examples.

認為本接著膜中之對寬度5 mm之硬化後之接著膜試片進行之上述拉伸試驗中之破斷強度為10 MPa以上、較佳為13 MPa以上、更佳為16 MPa以上、更佳為19 MPa以上、更佳為22 MPa以上的構成適於抵抗於硬化後之接著膜、即接著層中因熱應力之作用而產生、累積於內部之應變而抑制龜裂之形成。It is considered that the breaking strength of this adhesive film in the above-mentioned tensile test performed on a hardened adhesive film test piece with a width of 5 mm is 10 MPa or more, preferably 13 MPa or more, more preferably 16 MPa or more, and more preferably 16 MPa or more. The composition of 19 MPa or more, more preferably 22 MPa or more is suitable for suppressing the formation of cracks by resisting the internal strain generated by thermal stress in the adhesive film after hardening, that is, the adhesive layer.

認為本接著膜中之對寬度5 mm之硬化後之接著膜試片進行之上述拉伸試驗中之破斷伸長率為60%以上、較佳為65%以上、更佳為70%以上、更佳為75%以上的構成適於抑制硬化後之接著膜、即接著層中由熱應力之作用所引起之內部應變。於接著層中，內部應變量越少，則越不易產生龜裂。It is considered that the elongation at break of the above-mentioned tensile test performed on the adhesive film test piece with a width of 5 mm after hardening in this adhesive film is 60% or more, preferably 65% or more, more preferably 70% or more, and more preferably 60% or more. A composition of more than 75% is suitable for suppressing the internal strain caused by the action of thermal stress in the adhesive film after hardening, that is, the adhesive layer. In the adhesive layer, the smaller the amount of internal strain, the less prone to cracks.

如上所述，本發明之第1態樣之接著膜適於抑制由其形成之接著層中由熱應力所引起之龜裂之產生。As described above, the adhesive film of the first aspect of the present invention is suitable for suppressing the generation of cracks caused by thermal stress in the adhesive layer formed therefrom.

本接著膜於初始夾頭間距離22.5 mm、頻率1 Hz、動態應變±0.5 μm及升溫速度10℃/分鐘之條件下對寬度5 mm之硬化後之接著膜試片進行測定所獲得之125℃下之拉伸儲存彈性模數較佳為40 MPa以上，更佳為50 MPa以上，更佳為60 MPa以上。此種構成係就抑制所形成之接著層中由熱應力所引起之龜裂之產生的方面而言較佳。The 125°C temperature of the adhesive film measured on a hardened adhesive film test piece with a width of 5 mm under the conditions of the initial chuck distance of 22.5 mm, frequency of 1 Hz, dynamic strain ±0.5 μm, and heating rate of 10°C/min. The lower tensile storage elastic modulus is preferably at least 40 MPa, more preferably at least 50 MPa, more preferably at least 60 MPa. Such a constitution is preferable in terms of suppressing the generation of cracks caused by thermal stress in the formed adhesive layer.

本接著膜之厚度較佳為40 μm以上，更佳為60 μm以上，更佳為80 μm以上。此種構成係就使用本發明之接著膜作為將打線接合安裝於安裝基板之第1半導體晶片與連接於該第1半導體晶片之接合線之整體或一部分一起包埋，並且於安裝基板接合第2半導體晶片之接著層形成用接著膜(半導體晶片包埋用較厚之接著膜)的方面而言較佳。或者與接著膜之厚度相關之該構成係就使用本發明之接著膜作為包埋覆晶安裝於安裝基板之第1半導體晶片，並且於安裝基板接合第2半導體晶片之接著層形成用接著膜(半導體晶片包埋用較厚之接著膜)的方面而言較佳。The thickness of the adhesive film is preferably above 40 μm, more preferably above 60 μm, more preferably above 80 μm. This kind of structure is to use the adhesive film of the present invention as the first semiconductor chip mounted on the mounting substrate by wire bonding and the whole or part of the bonding wire connected to the first semiconductor chip to be embedded together, and the second semiconductor chip is bonded to the mounting substrate. It is preferable in terms of an adhesive film for forming an adhesive layer of a semiconductor wafer (thicker adhesive film for semiconductor wafer embedding). Or the composition related to the thickness of the adhesive film is to use the adhesive film of the present invention as an adhesive film for the formation of an adhesive layer that embeds the first semiconductor chip that is flip-chip mounted on the mounting substrate, and bonds the second semiconductor chip to the mounting substrate ( It is better in terms of thicker adhesive film for semiconductor chip embedding).

本接著膜之厚度較佳為150 μm以下，更佳為140 μm以下，更佳為130 μm以下。此種構成係就於以本接著膜與切晶帶之黏著劑層側密接之形態供於如上所述之割斷用擴張步驟之情形時實現該接著膜之良好之割斷的方面而言較佳。The thickness of the adhesive film is preferably less than 150 μm, more preferably less than 140 μm, more preferably less than 130 μm. Such a configuration is preferable in terms of achieving good cutting of the adhesive film when the present adhesive film and the adhesive layer side of the dicing tape are in close contact with each other in the above-mentioned expanding step for cutting.

本接著膜於未硬化狀態下之120℃下之黏度較佳為300 Pa・s以上，更佳為700 Pa・s以上，更佳為1000 Pa・s以上。本接著膜於未硬化狀態下之120℃下之黏度較佳為5000 Pa・s以下，更佳為4500 Pa・s以下，更佳為4000 Pa・s以下。與接著膜之黏度相關之該等構成係就使用本接著膜作為用以形成伴隨有半導體晶片或接合線之包埋之接著層之上述各種較厚之接著膜的方面而言較佳。The viscosity of the adhesive film at 120°C in an uncured state is preferably at least 300 Pa·s, more preferably at least 700 Pa·s, more preferably at least 1000 Pa·s. The viscosity of the adhesive film at 120°C in an uncured state is preferably not more than 5000 Pa·s, more preferably not more than 4500 Pa·s, more preferably not more than 4000 Pa·s. These configurations related to the viscosity of the adhesive film are preferable in terms of using the present adhesive film as the various thicker adhesive films described above for forming an adhesive layer accompanying embedding of semiconductor chips or bonding wires.

本接著膜可以能夠形成將打線接合安裝於安裝基板之第1半導體晶片與連接於該第1半導體晶片之接合線之整體或一部分一起包埋、並且於安裝基板接合第2半導體晶片之接著層的方式構成。本接著膜亦可以能夠形成包埋覆晶安裝於安裝基板之第1半導體晶片、並且於安裝基板接合第2半導體晶片之接著層的方式構成。This adhesive film can form an adhesive layer that embeds the first semiconductor chip mounted on the mounting substrate by wire bonding together with the whole or a part of the bonding wire connected to the first semiconductor chip, and bonds the second semiconductor chip to the mounting substrate. way constituted. This adhesive film can also be configured to form an adhesive layer that embeds the first semiconductor chip that is flip-chip mounted on the mounting substrate and bonds the second semiconductor chip to the mounting substrate.

根據本發明之第2態樣，提供一種附有切晶帶之接著膜。該附有切晶帶之接著膜具備切晶帶、及本發明之第1態樣之上述接著膜。切晶帶具有包含基材及黏著劑層之積層構造。接著膜係與切晶帶之黏著劑層可剝離地密接。具備本發明之第1態樣之接著膜之此種附有切晶帶之接著膜適於例如以晶圓尺寸提供適於抑制所形成之接著層中由熱應力所引起之龜裂之產生的接著膜。According to a second aspect of the present invention, an adhesive film with a dicing tape is provided. This adhesive film with a dicing tape includes the dicing tape and the above-mentioned adhesive film according to the first aspect of the present invention. The dicing tape has a laminated structure including a base material and an adhesive layer. Then, the film system is closely attached to the adhesive layer of the dicing tape in a detachable manner. Such an adhesive film with a dicing tape provided with the adhesive film of the first aspect of the present invention is suitable for providing, for example, a wafer-sized adhesive film suitable for suppressing the generation of cracks caused by thermal stress in the formed adhesive layer. Then the film.

圖1係本發明之一實施形態之附有切晶帶之接著膜X的剖面模式圖。附有切晶帶之接著膜X具有包含本發明之一實施形態之接著膜10及切晶帶20的積層構造。切晶帶20具有包含基材21及黏著劑層22之積層構造。黏著劑層22係於接著膜10側具有黏著面22a。接著膜10係與切晶帶20之黏著劑層22或其黏著面22a可剝離地密接。附有切晶帶之接著膜X可用於在製造半導體裝置時獲得附有接著膜之半導體晶片之過程中的例如如下所述之刀片切割(blade dicing)步驟或擴張步驟。又，附有切晶帶之接著膜X具有與作為半導體裝置之製造過程中之工件之半導體晶圓對應之尺寸的圓盤形狀，其直徑例如處於300～390 mm之範圍內(12英吋晶圓對應型)、200～280 mm之範圍內(8英吋晶圓對應型)、450～530 mm之範圍內(18英吋晶圓對應型)、或150～230 mm之範圍內(6英吋晶圓對應型)。Fig. 1 is a schematic cross-sectional view of an adhesive film X with a dicing tape according to an embodiment of the present invention. The adhesive film X with a dicing tape has a laminated structure including an adhesive film 10 and a dicing tape 20 according to an embodiment of the present invention. The crystal cutting tape 20 has a laminated structure including a base material 21 and an adhesive layer 22 . The adhesive layer 22 has an adhesive surface 22 a on the side of the adhesive film 10 . Next, the film 10 is closely attached to the adhesive layer 22 or the adhesive surface 22a of the crystal cutting tape 20 in a detachable manner. The adhesive film X with a dicing tape can be used in, for example, a blade dicing step or an expanding step as described below in the process of obtaining a semiconductor wafer with an adhesive film when manufacturing a semiconductor device. Also, the adhesive film X with the dicing tape has a disc shape having a size corresponding to a semiconductor wafer as a workpiece in the manufacturing process of a semiconductor device, and its diameter is, for example, in the range of 300 to 390 mm (for a 12-inch wafer). round), within the range of 200-280 mm (for 8-inch wafers), within the range of 450-530 mm (for 18-inch wafers), or within the range of 150-230 mm (for 6-inch wafers) inch wafer type).

附有切晶帶之接著膜X中之接著膜10具有能夠作為表現出熱硬化性之黏晶用接著劑發揮作用的構成。接著膜10可具有包含熱硬化性樹脂及熱塑性樹脂作為樹脂成分之組成，亦可具有包含含有能夠與硬化劑反應而產生鍵之熱硬化性官能基之熱塑性樹脂作為樹脂成分之組成。於接著膜10具有包含含有熱硬化性官能基之熱塑性樹脂之組成之情形時，該接著膜10無須進而包含熱硬化性樹脂。此種接著膜10可具有單層構造，亦可具有於鄰接層間組成不同之多層構造。The adhesive film 10 in the adhesive film X with a dicing tape has a structure capable of functioning as a thermosetting adhesive for die bonding. The adhesive film 10 may have a composition including a thermosetting resin and a thermoplastic resin as a resin component, or may have a composition including a thermoplastic resin including a thermosetting functional group capable of reacting with a curing agent to form a bond as a resin component. When the adhesive film 10 has a composition including a thermoplastic resin containing a thermosetting functional group, the adhesive film 10 does not need to further include a thermosetting resin. Such an adhesive film 10 may have a single-layer structure, or may have a multi-layer structure with different compositions between adjacent layers.

作為接著膜10具有包含熱硬化性樹脂及熱塑性樹脂之組成之情形時之該熱硬化性樹脂，例如可列舉：環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂及熱硬化性聚醯亞胺樹脂。接著膜10可包含一種熱硬化性樹脂，亦可包含兩種以上之熱硬化性樹脂。環氧樹脂由於有可能會引起作為黏晶對象之半導體晶片之腐蝕之離子性雜質等之含量較少的傾向，故而作為接著膜10中之熱硬化性樹脂較佳。又，作為用以使環氧樹脂表現熱硬化性之硬化劑，較佳為酚樹脂。As the thermosetting resin when the adhesive film 10 has a composition including a thermosetting resin and a thermoplastic resin, for example, epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, etc. Ester resin, silicone resin and thermosetting polyimide resin. The adhesive film 10 may contain one kind of thermosetting resin, or may contain two or more kinds of thermosetting resins. Epoxy resin is preferable as the thermosetting resin in the adhesive film 10 because it tends to contain less ionic impurities and the like that may cause corrosion of the semiconductor wafer to be bonded. Moreover, as a hardening|curing agent for expressing thermosetting property to an epoxy resin, a phenol resin is preferable.

作為上述環氧樹脂，例如可列舉：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型、乙內醯脲型、異氰尿酸三縮水甘油酯型及縮水甘油胺型環氧樹脂。苯酚酚醛清漆型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型環氧樹脂及四酚基乙烷型環氧樹脂由於富有與作為硬化劑之酚樹脂之反應性且耐熱性優異，故而作為接著膜10中之環氧樹脂較佳。Examples of the epoxy resins include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, Permeil type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoylurea type, triglycidyl isocyanurate type and glycidylamine type epoxy resin. Phenol novolak type epoxy resin, o-cresol novolac type epoxy resin, biphenyl type epoxy resin, trihydroxyphenylmethane type epoxy resin and tetraphenol ethane type epoxy resin are rich in and act as hardeners The phenolic resin has excellent reactivity and heat resistance, so it is preferable as the epoxy resin in the adhesive film 10 .

作為能夠作為環氧樹脂之硬化劑發揮作用之酚樹脂，例如可列舉：酚醛清漆型酚樹脂、可溶酚醛型酚樹脂及聚對羥基苯乙烯等聚羥基苯乙烯。作為酚醛清漆型酚樹脂，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂及壬基苯酚酚醛清漆樹脂。接著膜10可包含一種酚樹脂或兩種以上之酚樹脂作為環氧樹脂之硬化劑。苯酚酚醛清漆樹脂或苯酚芳烷基樹脂由於有在用作作為黏晶用接著劑之環氧樹脂之硬化劑之情形時提昇該接著劑之連接可靠性的傾向，故而作為接著膜10中之環氧樹脂用硬化劑較佳。As a phenol resin which can function as a hardening|curing agent of an epoxy resin, a novolak type phenol resin, a resole type phenol resin, and polyhydroxystyrenes, such as polyparahydroxystyrene, are mentioned, for example. Examples of the novolak-type phenol resin include phenol novolak resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolak resins, and nonylphenol novolac resins. The following film 10 may contain one kind of phenolic resin or two or more kinds of phenolic resins as the hardener of the epoxy resin. Phenol novolac resin or phenol aralkyl resin is used as the ring in the adhesive film 10 because it tends to improve the connection reliability of the adhesive when used as a hardener of the epoxy resin of the adhesive for die bonding. Hardeners for epoxy resins are preferred.

於接著膜10含有環氧樹脂、及作為其硬化劑之酚樹脂之情形時，以相對於環氧樹脂中之環氧基1當量，酚樹脂中之羥基較佳為0.5～2.0當量、更佳為0.8～1.2當量之比率調配兩樹脂。此種構成係就於接著膜10之硬化時充分地進行該環氧樹脂及酚樹脂之硬化反應之方面而言較佳。When the adhesive film 10 contains an epoxy resin and a phenol resin as its hardener, the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents relative to the epoxy group in the epoxy resin, and more preferably Prepare the two resins at a ratio of 0.8 to 1.2 equivalents. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin sufficiently proceeds when the adhesive film 10 is cured.

就於接著膜10中適當地表現作為熱硬化型接著劑之功能之觀點而言，接著膜10中之熱硬化性樹脂之含有比率較佳為5～60質量%，更佳為10～50質量%。From the viewpoint of appropriately expressing the function as a thermosetting adhesive in the adhesive film 10, the content ratio of the thermosetting resin in the adhesive film 10 is preferably 5 to 60% by mass, more preferably 10 to 50% by mass %.

接著膜10中之熱塑性樹脂例如負責黏合劑功能，作為接著膜10具有包含熱硬化性樹脂及熱塑性樹脂之組成之情形時之該熱塑性樹脂，例如可列舉：丙烯酸系樹脂、天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、聚對苯二甲酸乙二酯或聚對苯二甲酸丁二酯等飽和聚酯樹脂、聚醯胺醯亞胺樹脂及氟樹脂。接著膜10可包含一種熱塑性樹脂，亦可包含兩種以上之熱塑性樹脂。丙烯酸系樹脂由於離子性雜質較少且耐熱性較高，故而作為接著膜10中之熱塑性樹脂較佳。The thermoplastic resin in the adhesive film 10 functions as an adhesive, for example. As the thermoplastic resin in the case where the adhesive film 10 has a composition including a thermosetting resin and a thermoplastic resin, examples include: acrylic resin, natural rubber, and butyl rubber. , isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide Resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, saturated polyester resin such as polyethylene terephthalate or polybutylene terephthalate, polyamide imide Amine resin and fluororesin. The adhesive film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferable as the thermoplastic resin in the adhesive film 10 because it has less ionic impurities and has higher heat resistance.

形成接著膜10含有丙烯酸系樹脂作為熱塑性樹脂之情形時之該丙烯酸系樹脂之丙烯酸系聚合物較佳為以質量比率計包含最多之源自(甲基)丙烯酸酯之單體單元。「(甲基)丙烯酸」意指「丙烯酸」及/或「甲基丙烯酸」。When forming the adhesive film 10 containing an acrylic resin as a thermoplastic resin, the acrylic polymer of the acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. "(Meth)acrylic acid" means "acrylic acid" and/or "methacrylic acid".

作為用以形成上述丙烯酸系聚合物之單體單元之(甲基)丙烯酸酯、即作為丙烯酸系聚合物之構成單體之(甲基)丙烯酸酯，例如可列舉：(甲基)丙烯酸烷基酯、(甲基)丙烯酸環烷基酯及(甲基)丙烯酸芳酯。作為(甲基)丙烯酸烷基酯，例如可列舉：(甲基)丙烯酸之甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯(即月桂酯)、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯及二十烷基酯。作為(甲基)丙烯酸環烷基酯，例如可列舉(甲基)丙烯酸之環戊酯及環己酯。作為(甲基)丙烯酸芳酯，例如可列舉(甲基)丙烯酸苯酯及(甲基)丙烯酸苄酯。作為丙烯酸系聚合物之構成單體，可使用一種(甲基)丙烯酸酯，亦可使用兩種以上之(甲基)丙烯酸酯。又，用以形成丙烯酸系樹脂之丙烯酸系聚合物可使用以形成丙烯酸系聚合物之原料單體進行聚合而獲得。作為聚合方法，例如可列舉：溶液聚合、乳化聚合、塊狀聚合及懸浮聚合。Examples of the (meth)acrylate used as a monomer unit for forming the above-mentioned acrylic polymer, that is, the (meth)acrylate used as a constituent monomer of the acrylic polymer include: (meth)acrylic acid alkyl esters, cycloalkyl (meth)acrylates and aryl (meth)acrylates. Examples of the alkyl (meth)acrylate include: methyl (meth)acrylate, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, third butyl ester, Amyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (ie lauryl ester), tridecyl ester, myristyl ester, cetyl ester, stearyl ester and eicosyl ester. As cycloalkyl (meth)acrylate, cyclopentyl and cyclohexyl (meth)acrylic acid are mentioned, for example. As aryl (meth)acrylate, phenyl (meth)acrylate and benzyl (meth)acrylate are mentioned, for example. As a monomer constituting the acrylic polymer, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. Moreover, the acrylic polymer for forming an acrylic resin can be obtained by polymerizing using the raw material monomer for forming an acrylic polymer. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example.

上述丙烯酸系聚合物例如為了其凝聚力或耐熱性之改質，可包含能夠與(甲基)丙烯酸酯進行共聚合之一種或兩種以上之其他單體作為構成單體。作為此種單體，例如可列舉：含羧基單體、酸酐單體、含羥基單體、含環氧基單體、含磺酸基單體、含磷酸基單體、丙烯醯胺及丙烯腈。作為含羧基單體，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸及丁烯酸。作為酸酐單體，例如可列舉順丁烯二酸酐及伊康酸酐。作為含羥基單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯及(甲基)丙烯酸(4-羥基甲基環己基)甲酯。作為含環氧基單體，例如可列舉(甲基)丙烯酸縮水甘油酯及(甲基)丙烯酸甲基縮水甘油酯。作為含磺酸基單體，例如可列舉：苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基單體，例如可列舉2-羥基乙基丙烯醯基磷酸酯。The above-mentioned acrylic polymer may contain one or two or more other monomers that can be copolymerized with (meth)acrylate as constituent monomers, for example, in order to improve its cohesive force or heat resistance. Examples of such monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile . Examples of carboxyl group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. As an acid anhydride monomer, maleic anhydride and itaconic anhydride are mentioned, for example. Examples of hydroxyl-containing monomers include: 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxy (meth)acrylate Hydroxyhexyl, 8-Hydroxyoctyl (meth)acrylate, 10-Hydroxydecyl (meth)acrylate, 12-Hydroxylauryl (meth)acrylate and (4-Hydroxymethylcyclohexyl (meth)acrylate) ) methyl ester. Examples of epoxy group-containing monomers include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of sulfonic acid group-containing monomers include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid acid and (meth)acryloxynaphthalenesulfonic acid. As a phosphoric acid group-containing monomer, 2-hydroxyethyl acryloyl phosphate is mentioned, for example.

就於接著膜10中實現較高之凝聚力之觀點而言，作為丙烯酸系樹脂包含於接著膜10之丙烯酸系聚合物例如為丙烯酸丁酯、丙烯酸乙酯及丙烯腈之共聚物。The acrylic polymer contained in the adhesive film 10 as an acrylic resin is, for example, a copolymer of butyl acrylate, ethyl acrylate, and acrylonitrile from the viewpoint of realizing a high cohesive force in the adhesive film 10 .

於接著膜10具有包含含有熱硬化性官能基之熱塑性樹脂之組成之情形時，作為該熱塑性樹脂，例如可使用含熱硬化性官能基丙烯酸系樹脂。用以形成該含熱硬化性官能基丙烯酸系樹脂之丙烯酸系樹脂較佳為以質量比率計包含最多之源自(甲基)丙烯酸酯之單體單元。作為此種(甲基)丙烯酸酯，例如可使用作為形成接著膜10中所包含之丙烯酸系樹脂之丙烯酸系聚合物之構成單體於上文敍述的(甲基)丙烯酸酯。另一方面，作為用以形成含熱硬化性官能基丙烯酸系樹脂之熱硬化性官能基，例如可列舉：縮水甘油基、羧基、羥基及異氰酸基。於該等中，可較佳地使用縮水甘油基及羧基。即，作為含熱硬化性官能基丙烯酸系樹脂，可較佳地使用含縮水甘油基丙烯酸系樹脂或含羧基丙烯酸系樹脂。又，根據含熱硬化性官能基丙烯酸系樹脂中之熱硬化性官能基之種類，選擇可與其產生反應之硬化劑。於含熱硬化性官能基丙烯酸系樹脂之熱硬化性官能基為縮水甘油基之情形時，作為硬化劑，可使用作為環氧樹脂用硬化劑於上文敍述之酚樹脂。When the adhesive film 10 has a composition containing a thermoplastic resin containing a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the most monomer units derived from (meth)acrylate in terms of mass ratio. As such (meth)acrylate, the (meth)acrylate mentioned above as a constituent monomer of the acrylic polymer which forms the acrylic resin contained in the adhesive film 10 can be used, for example. On the other hand, as a thermosetting functional group for forming a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, a glycidyl group and a carboxyl group can be preferably used. That is, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used as the thermosetting functional group-containing acrylic resin. Also, according to the type of thermosetting functional group in the thermosetting functional group-containing acrylic resin, a curing agent capable of reacting with it is selected. When the thermosetting functional group of the thermosetting functional group-containing acrylic resin is a glycidyl group, as the curing agent, the phenol resin described above as the curing agent for epoxy resin can be used.

為了對為了進行黏晶而硬化之前之接著膜10實現某一程度之交聯度，例如較佳為將可與接著膜10中所包含之上述樹脂成分之分子鏈末端之官能基等反應而產生鍵之多官能性化合物調配於接著膜形成用樹脂組合物中作為交聯劑。此種構成係就對接著膜10提昇高溫下之接著特性之方面而言，又，就謀求耐熱性之改善之方面而言較佳。作為此種交聯劑，例如可列舉多異氰酸酯化合物。作為多異氰酸酯化合物，例如可列舉：甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、及多元醇與二異氰酸酯之加成物。關於接著膜形成用樹脂組合物中之交聯劑含量，相對於具有可與該交聯劑反應而產生鍵之上述官能基之樹脂100質量份，就提昇所形成之接著膜10之凝聚力之觀點而言，較佳為0.05質量份以上，就提昇所形成之接著膜10之接著力之觀點而言，較佳為7質量份以下。又，作為接著膜10中之交聯劑，亦可將環氧樹脂等其他多官能性化合物與多異氰酸酯化合物併用。In order to achieve a certain degree of crosslinking of the adhesive film 10 before hardening for die bonding, for example, it is preferable to react with a functional group at the end of the molecular chain of the above-mentioned resin component contained in the adhesive film 10. The bonded polyfunctional compound is formulated in the adhesive film forming resin composition as a crosslinking agent. Such a configuration is preferable in terms of improving the adhesive properties at high temperature for the adhesive film 10 and in terms of improving heat resistance. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate. Regarding the content of the crosslinking agent in the resin composition for adhesive film formation, it is from the viewpoint of improving the cohesive force of the formed adhesive film 10 with respect to 100 parts by mass of the resin having the above-mentioned functional group that can react with the crosslinking agent to form a bond. Specifically, it is preferably 0.05 parts by mass or more, and it is preferably 7 parts by mass or less from the viewpoint of improving the adhesive force of the formed adhesive film 10 . In addition, as a crosslinking agent in the adhesive film 10, other polyfunctional compounds such as epoxy resins and polyisocyanate compounds may be used in combination.

調配於接著膜10之上述丙烯酸系樹脂及上述含熱硬化性官能基丙烯酸系樹脂之玻璃轉移溫度較佳為-40～10℃。關於聚合物之玻璃轉移溫度，可使用基於下述Fox之式求出之玻璃轉移溫度(理論值)。Fox之式係聚合物之玻璃轉移溫度Tg與該聚合物中之每一構成單體之均聚物之玻璃轉移溫度Tgi的關係式。於下述Fox之式中，Tg表示聚合物之玻璃轉移溫度(℃)，Wi表示構成該聚合物之單體i之重量分率，Tgi表示單體i之均聚物之玻璃轉移溫度(℃)。關於均聚物之玻璃轉移溫度，可使用文獻值。例如於「新高分子文庫7 塗料用合成樹脂入門」(北岡協三著，高分子學會出版，1995年)或「丙烯酸酯目錄(1997年度版)」(三菱麗陽股份有限公司)中列舉各種均聚物之玻璃轉移溫度。又，關於單體之均聚物之玻璃轉移溫度，亦可藉由日本專利特開2007-51271號公報中具體記載之方法求出。The glass transition temperature of the above-mentioned acrylic resin and the above-mentioned thermosetting functional group-containing acrylic resin prepared in the adhesive film 10 is preferably -40-10°C. Regarding the glass transition temperature of the polymer, the glass transition temperature (theoretical value) obtained based on the following Fox's formula can be used. Fox's formula is the relationship between the glass transition temperature Tg of the polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following formula of Fox, Tg represents the glass transition temperature (°C) of the polymer, Wi represents the weight fraction of monomer i constituting the polymer, and Tgi represents the glass transition temperature (°C) of the homopolymer of monomer i ). For the glass transition temperature of the homopolymers, literature values can be used. For example, in "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (Kyoko Kitaoka, Published by the Polymer Society, 1995) or "Acrylic Ester Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.) The glass transition temperature of the polymer. Moreover, the glass transition temperature of the homopolymer of a monomer can also be calculated|required by the method specifically described in Unexamined-Japanese-Patent No. 2007-51271.

Fox之式   1/(273＋Tg)＝Σ[Wi/(273＋Tgi)]Fox's formula 1/(273+Tg)=Σ[Wi/(273+Tgi)]

接著膜10亦可含有填料。於接著膜10中調配填料係就調整接著膜10之破斷強度、破斷伸長率或彈性模數等物性之方面而言較佳。作為填料，可列舉無機填料及有機填料。填料可具有球狀、針狀、片狀等各種形狀。又，接著膜10可含有一種填料，亦可含有兩種以上之填料。The film 10 may then also contain fillers. It is preferable to mix fillers in the adhesive film 10 in terms of adjusting the physical properties of the adhesive film 10 such as breaking strength, elongation at break, or modulus of elasticity. As a filler, an inorganic filler and an organic filler are mentioned. The filler can have various shapes such as spherical shape, needle shape, and flake shape. In addition, the adhesive film 10 may contain one kind of filler, or may contain two or more kinds of fillers.

作為上述無機填料之構成材料，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶質二氧化矽及非晶質二氧化矽。作為無機填料之構成材料，亦可列舉：鋁、金、銀、銅、鎳等單質金屬、或合金、非晶形碳、石墨等。接著膜10含有無機填料之情形時之該無機填料之含量較佳為10質量%以上，更佳為20質量%以上，更佳為30質量%以上。又，該含量較佳為50質量%以下，更佳為45質量%以下，更佳為40質量%以下。Examples of the constituent materials of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate crystals. whiskers, boron nitride, crystalline silicon dioxide and amorphous silicon dioxide. Examples of constituent materials of the inorganic filler include simple metals such as aluminum, gold, silver, copper, and nickel, alloys, amorphous carbon, and graphite. Next, when the film 10 contains an inorganic filler, the content of the inorganic filler is preferably at least 10% by mass, more preferably at least 20% by mass, and more preferably at least 30% by mass. Also, the content is preferably at most 50% by mass, more preferably at most 45% by mass, even more preferably at most 40% by mass.

作為上述有機填料之構成材料，例如可列舉：聚甲基丙烯酸甲酯(PMMA)、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚醯亞胺及聚酯醯亞胺。接著膜10含有有機填料之情形時之該有機填料之含量較佳為2質量%以上，更佳為5質量%以上，更佳為8質量%以上。又，該含量較佳為20質量%以下，更佳為17質量%以下，更佳為15質量%以下。Examples of constituent materials of the above-mentioned organic filler include polymethyl methacrylate (PMMA), polyimide, polyamide imide, polyether ether ketone, polyether imide, and polyester imide. . Next, when the film 10 contains an organic filler, the content of the organic filler is preferably at least 2% by mass, more preferably at least 5% by mass, and more preferably at least 8% by mass. Also, the content is preferably at most 20% by mass, more preferably at most 17% by mass, more preferably at most 15% by mass.

接著膜10含有填料之情形時之該填料之平均粒徑較佳為0.005～10 μm，更佳為0.05～1 μm。該填料之平均粒徑為0.005 μm以上之構成係就於接著膜10中實現對半導體晶圓等被附體之較高之潤濕性或接著性的方面而言較佳。該填料之平均粒徑為10 μm以下之構成係就於接著膜10中獲得充分之填料添加效果，並且確保耐熱性的方面而言較佳。填料之平均粒徑例如可使用亮度式粒度分佈計(商品名「LA-910」，堀場製作所股份有限公司製造)求出。Next, when the film 10 contains a filler, the average particle diameter of the filler is preferably 0.005-10 μm, more preferably 0.05-1 μm. The configuration in which the average particle diameter of the filler is 0.005 μm or more is preferable in terms of achieving high wettability or adhesiveness to an attached body such as a semiconductor wafer in the adhesive film 10 . The configuration in which the average particle diameter of the filler is 10 μm or less is preferable in terms of obtaining a sufficient filler addition effect in the adhesive film 10 and ensuring heat resistance. The average particle diameter of the filler can be determined, for example, using a brightness type particle size distribution meter (trade name "LA-910", manufactured by Horiba Seisakusho Co., Ltd.).

接著膜10亦可含有熱硬化觸媒。於接著膜10中調配熱硬化觸媒係就於接著膜10之硬化時充分地進行樹脂成分之硬化反應，或者提高硬化反應速度之方面而言較佳。作為此種熱硬化觸媒，例如可列舉：咪唑系化合物、三苯基膦系化合物、胺系化合物及三鹵代硼烷系化合物。作為咪唑系化合物，例如可列舉：2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三𠯤、2,4-二胺基-6-[2'-十一烷基咪唑基-(1')]-乙基-均三𠯤、2,4-二胺基-6-[2'-乙基-4'-甲基咪唑基-(1')]-乙基-均三𠯤、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三𠯤異三聚氰酸加成物、2-苯基-4,5-二羥基甲基咪唑及2-苯基-4-甲基-5-羥基甲基咪唑。作為三苯基膦系化合物，例如可列舉：三苯基膦、三(丁基苯基)膦、三(對甲基苯基)膦、三(壬基苯基)膦、二苯基甲苯基膦、四苯基溴化鏻、甲基三苯基溴化鏻、甲基三苯基氯化鏻、甲氧基甲基三苯基氯化鏻及苄基三苯基氯化鏻。三苯基膦系化合物亦包含同時具有三苯基膦結構及三苯基硼烷結構之化合物。作為此種化合物，例如可列舉：四苯基鏻四苯基硼酸鹽、四苯基鏻四-對甲苯基硼酸鹽、苄基三苯基鏻四苯基硼酸鹽及三苯基膦三苯基硼烷。作為胺系化合物，例如可列舉：單乙醇胺三氟硼酸鹽及雙氰胺。作為三鹵代硼烷系化合物，例如可列舉三氯硼烷。接著膜10可含有一種熱硬化觸媒，亦可含有兩種以上之熱硬化觸媒。Then the film 10 may also contain a thermosetting catalyst. It is preferable to blend a thermosetting catalyst in the adhesive film 10 in order to sufficiently advance the curing reaction of the resin component during the curing of the adhesive film 10 or to increase the speed of the curing reaction. Examples of such thermosetting catalysts include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogenated borane-based compounds. Examples of imidazole compounds include: 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2' -Methylimidazolyl-(1')]-Ethyl-Mesyrone Trisammonium, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-trisanthinyl, 2,4-diamino-6 -[2'-Methylimidazolyl-(1')]-Ethyl-S-tri-isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl -4-methyl-5-hydroxymethylimidazole. Examples of triphenylphosphine compounds include: triphenylphosphine, tri(butylphenyl)phosphine, tris(p-methylphenyl)phosphine, tris(nonylphenyl)phosphine, diphenyltolyl Phosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine compound also includes compounds having both a triphenylphosphine structure and a triphenylborane structure. Such compounds include, for example, tetraphenylphosphonium tetraphenyl borate, tetraphenylphosphonium tetra-p-tolyl borate, benzyltriphenylphosphonium tetraphenyl borate, and triphenylphosphine triphenyl borate. borane. As an amine compound, monoethanolamine trifluoroborate and dicyandiamide are mentioned, for example. As a trihalogenated borane compound, trichloroborane is mentioned, for example. Next, the film 10 may contain one thermosetting catalyst, or may contain two or more thermosetting catalysts.

接著膜10亦可視需要含有一種或兩種以上之其他成分。作為該其他成分，例如可列舉：阻燃劑、矽烷偶合劑及離子捕捉劑。作為阻燃劑，例如可列舉：三氧化二銻、五氧化二銻及溴化環氧樹脂。作為矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷及γ-縮水甘油氧基丙基甲基二乙氧基矽烷。作為離子捕捉劑，例如可列舉：鋁碳酸鎂類、氫氧化鉍、水合氧化銻(例如東亞合成股份有限公司製造之「IXE-300」)、特定結構之磷酸鋯(例如東亞合成股份有限公司製造之「IXE-100」)、矽酸鎂(例如協和化學工業股份有限公司製造之「Kyowaad 600」)及矽酸鋁(例如協和化學工業股份有限公司製造之「Kyowaad 700」)。可於與金屬離子之間形成錯合物之化合物亦可用作離子捕捉劑。作為此種化合物，例如可列舉：***系化合物、四唑系化合物及聯吡啶系化合物。於該等中，就於與金屬離子之間形成之錯合物之穩定性的觀點而言，較佳為***系化合物。作為此種***系化合物，例如可列舉：1,2,3-苯并***、1-{N,N-雙(2-乙基己基)胺基甲基}苯并***、羧基苯并***、2-(2-羥基-5-甲基苯基)苯并***、2-(2-羥基-3,5-二-第三丁基苯基)-5-氯苯并***、2-(2-羥基-3-第三丁基-5-甲基苯基)-5-氯苯并***、2-(2-羥基-3,5-二-第三戊基苯基)苯并***、2-(2-羥基-5-第三辛基苯基)苯并***、6-(2-苯并***基)-4-第三辛基-6'-第三丁基-4'-甲基-2,2'-亞甲基雙酚、1-(2,3-二羥基丙基)苯并***、1-(1,2-二羧基二乙基)苯并***、1-(2-乙基己基胺基甲基)苯并***、2,4-二-第三戊基-6-{(H-苯并***-1-基)甲基}苯酚、2-(2-羥基-5-第三丁基苯基)-2H-苯并***、辛基-3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并***-2-基)苯基]丙酸酯、2-乙基己基-3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并***-2-基)苯基]丙酸酯、2-(2H-苯并***-2-基)-6-(1-甲基-1-苯基乙基)-4-(1,1,3,3-四甲基丁基)苯酚、2-(2H-苯并***-2-基)-4-第三丁基苯酚、2-(2-羥基-5-甲基苯基)苯并***、2-(2-羥基-5-第三辛基苯基)-苯并***、2-(3-第三丁基-2-羥基-5-甲基苯基)-5-氯苯并***、2-(2-羥基-3,5-二-第三戊基苯基)苯并***、2-(2-羥基-3,5-二-第三丁基苯基)-5-氯苯并***、2-[2-羥基-3,5-二(1,1-二甲基苄基)苯基]-2H-苯并***、2,2'-亞甲基雙[6-(2H-苯并***-2-基)-4-(1,1,3,3-四甲基丁基)苯酚]、2-[2-羥基-3,5-雙(α,α-二甲基苄基)苯基]-2H-苯并***及甲基-3-[3-(2H-苯并***-2-基)-5-第三丁基-4-羥基苯基]丙酸酯。又，對苯二酚化合物、羥基蒽醌化合物或多酚化合物等特定之含羥基化合物亦可用作離子捕捉劑。作為此種含羥基化合物，具體而言，可列舉：1,2-苯二酚、茜素、蒽絳酚、單寧、沒食子酸、沒食子酸甲酯及鄰苯三酚。Next, the film 10 may also contain one or two or more other components as required. As this other component, a flame retardant, a silane coupling agent, and an ion scavenger are mentioned, for example. As a flame retardant, antimony trioxide, antimony pentoxide, and a brominated epoxy resin are mentioned, for example. Examples of silane coupling agents include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethylsilane Diethoxysilane. Examples of ion-scavenging agents include aluminum magnesium carbonates, bismuth hydroxide, antimony oxide hydrate (such as "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate of a specific structure (such as Toagosei Co., Ltd. "IXE-100" from Kyowa Chemical Industry Co., Ltd.), magnesium silicate (such as "Kyowaad 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (such as "Kyowaad 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion traps. As such a compound, a triazole type compound, a tetrazole type compound, and a bipyridine type compound are mentioned, for example. Among these, triazole-based compounds are preferred from the viewpoint of stability of complexes formed with metal ions. Examples of such triazole compounds include 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl}benzotriazole, carboxybenzene Triazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tert-butylphenyl)-5-chlorobenzotriazole Azole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylbenzene Base) benzotriazole, 2-(2-hydroxy-5-tertoctylphenyl) benzotriazole, 6-(2-benzotriazolyl)-4-tertoctyl-6'- tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2,3-dihydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl Base) benzotriazole, 1-(2-ethylhexylaminomethyl) benzotriazole, 2,4-di-tertiary pentyl-6-{(H-benzotriazol-1-yl ) methyl} phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, octyl-3-[3-tert-butyl-4-hydroxy-5-( 5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-tert-butyl-4-hydroxy-5-(5-chloro-2H -Benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4- (1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2-(2-hydroxy-5-methyl phenyl) benzotriazole, 2-(2-hydroxy-5-tertoctylphenyl)-benzotriazole, 2-(3-tert-butyl-2-hydroxy-5-methylbenzene base)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di- Tributylphenyl)-5-chlorobenzotriazole, 2-[2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H-benzotriazole, 2 ,2'-Methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy -3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole and methyl-3-[3-(2H-benzotriazol-2-yl)-5 -tert-butyl-4-hydroxyphenyl]propionate. In addition, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, or polyphenol compounds can also be used as ion traps. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthracene, tannin, gallic acid, methyl gallate, and pyrogallol.

接著膜10之厚度較佳為40 μm以上，更佳為60 μm以上，更佳為80 μm以上。又，接著膜10之厚度較佳為150 μm以下，更佳為140 μm以下，更佳為130 μm以下。The thickness of the subsequent film 10 is preferably greater than 40 μm, more preferably greater than 60 μm, more preferably greater than 80 μm. Also, the thickness of the adhesive film 10 is preferably not more than 150 μm, more preferably not more than 140 μm, and more preferably not more than 130 μm.

接著膜10於未硬化狀態下之120℃下之黏度較佳為300 Pa・s以上，更佳為700 Pa・s以上，更佳為1000 Pa・s以上。又，接著膜10於未硬化狀態下之120℃下之黏度較佳為5000 Pa・s以下，更佳為4500 Pa・s以下，更佳為4000 Pa・s以下。The viscosity of the next film 10 at 120° C. in an uncured state is preferably 300 Pa·s or higher, more preferably 700 Pa·s or higher, more preferably 1000 Pa·s or higher. In addition, the viscosity of the adhesive film 10 at 120° C. in an uncured state is preferably 5000 Pa·s or less, more preferably 4500 Pa·s or less, more preferably 4000 Pa·s or less.

接著膜10係於在初始夾頭間距離10 mm、125℃及拉伸速度1 mm/秒之條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中，具有破斷強度10 MPa以上及/或破斷伸長率60%以上之耐破斷性。供於拉伸試驗之接著膜10或接著膜試片係藉由150℃下之1小時之加熱、及其後之175℃下之1小時之加熱而硬化者。又，接著膜10於在上述條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中表現的破斷強度較佳為13 MPa以上，更佳為16 MPa以上，更佳為19 MPa以上，更佳為22 MPa以上。接著膜10於在上述條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中表現的破斷伸長率較佳為65%以上，更佳為70%以上，更佳為75%以上。關於該等破斷強度及破斷伸長率，例如可使用動態黏彈性測定裝置(商品名「RSA-III」，TA Instruments製造)進行測定。又，接著膜10中之破斷強度及破斷伸長率之調整可藉由接著膜10中之無機填料及/或有機填料之調配量之控制、或接著膜10中之上述丙烯酸系樹脂之玻璃轉移溫度之控制等而進行。Adhesive film 10 has a breaking strength in the tensile test of a hardened adhesive film test piece with a width of 5 mm under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/s Breaking resistance above 10 MPa and/or breaking elongation above 60%. The adhesive film 10 or the adhesive film test piece used for the tensile test was cured by heating at 150°C for 1 hour and then heating at 175°C for 1 hour. In addition, the breaking strength of the adhesive film 10 in the tensile test performed on the adhesive film test piece after hardening with a width of 5 mm under the above conditions is preferably 13 MPa or more, more preferably 16 MPa or more, and more preferably 16 MPa or more. Above 19 MPa, more preferably above 22 MPa. The elongation at break of the adhesive film 10 in the tensile test performed on the adhesive film test piece with a width of 5 mm under the above conditions is preferably 65% or more, more preferably 70% or more, and more preferably 75% %above. The breaking strength and elongation at break can be measured, for example, using a dynamic viscoelasticity measuring device (trade name "RSA-III", manufactured by TA Instruments). In addition, the breaking strength and elongation at break in the adhesive film 10 can be adjusted by controlling the amount of inorganic filler and/or organic filler in the adhesive film 10, or the glass of the above-mentioned acrylic resin in the adhesive film 10. The control of transfer temperature etc. is carried out.

接著膜10於初始夾頭間距離22.5 mm、頻率1 Hz、動態應變±0.5 μm及升溫速度10℃/分鐘之條件下對寬度5 mm之硬化後之接著膜試片進行測定所獲得之125℃下之拉伸儲存彈性模數較佳為40 MPa以上，更佳為50 MPa以上，更佳為60 MPa以上。供於本測定之接著膜10或接著膜試片係藉由150℃下之1小時之加熱、及其後之175℃下之1小時之加熱而硬化者。關於拉伸儲存彈性模數，例如可使用動態黏彈性測定裝置(商品名「RSA-III」，TA Instruments製造)進行測定。又，接著膜10中之拉伸儲存彈性模數之調整可藉由接著膜10中之填料之調配量之控制等而進行。Adhesive film 10 is 125°C obtained by measuring a hardened adhesive film test piece with a width of 5 mm under the conditions of an initial distance between chucks of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ±0.5 μm, and a heating rate of 10°C/min. The lower tensile storage elastic modulus is preferably at least 40 MPa, more preferably at least 50 MPa, more preferably at least 60 MPa. The adhesive film 10 or the adhesive film test piece used in this measurement is hardened by heating at 150°C for 1 hour, and then heating at 175°C for 1 hour. The tensile storage modulus can be measured, for example, using a dynamic viscoelasticity measuring device (trade name "RSA-III", manufactured by TA Instruments). In addition, the adjustment of the tensile storage elastic modulus in the adhesive film 10 can be performed by controlling the compounding amount of the filler in the adhesive film 10 or the like.

接著膜10係於溫度23℃、剝離角度180°及拉伸速度300 mm/分鐘之條件下之剝離試驗中，對SUS平面例如表現出0.3～20 N/10 mm之180°剝離黏著力。此種構成係就確保藉由附有切晶帶之接著膜X或其接著膜10保持工件之方面而言較佳。Next, the film 10 exhibits a 180° peel adhesion of 0.3 to 20 N/10 mm on a SUS plane in a peel test under the conditions of a temperature of 23° C., a peel angle of 180°, and a tensile speed of 300 mm/min. Such a configuration is preferable in terms of ensuring that the workpiece is held by the adhesive film X or the adhesive film 10 with the dicing tape attached thereto.

附有切晶帶之接著膜X中之切晶帶20之基材21係於切晶帶20或附有切晶帶之接著膜X中作為支持體發揮作用的元件。基材21例如為塑膠基材，作為該塑膠基材，可較佳地使用塑膠膜。作為塑膠基材之構成材料，例如可列舉：聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚氯乙烯、聚偏二氯乙烯、聚苯基硫醚、芳香族聚醯胺、氟樹脂、纖維素系樹脂及聚矽氧樹脂。作為聚烯烴，例如可列舉：低密度聚乙烯、直鏈狀低密度聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-丁烯共聚物及乙烯-己烯共聚物。作為聚酯，例如可列舉：聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯及聚對苯二甲酸丁二酯。基材21可包含一種材料，亦可包含兩種以上之材料。基材21可具有單層構造，亦可具有多層構造。於基材21上之黏著劑層22具有紫外線硬化性之情形時，較佳為基材21具有紫外線透過性。又，於基材21包含塑膠膜之情形時，可為無延伸膜，可為單軸延伸膜，亦可為雙軸延伸膜。The substrate 21 of the dicing tape 20 in the adhesive film X with dicing tape is an element that functions as a support in the dicing tape 20 or the adhesive film X with dicing tape. The substrate 21 is, for example, a plastic substrate, and a plastic film can be preferably used as the plastic substrate. As the constituent material of the plastic base material, for example, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, polyamide, etc. Aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose resin and silicone resin. Examples of polyolefins include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, and block copolymerized polypropylene. , homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene -Butene copolymers and ethylene-hexene copolymers. As polyester, polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate are mentioned, for example. The base material 21 may contain one material, or two or more materials. The base material 21 may have a single-layer structure or may have a multi-layer structure. When the adhesive layer 22 on the base material 21 has ultraviolet curability, it is preferable that the base material 21 has ultraviolet transmittance. Also, when the base material 21 includes a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a biaxially stretched film.

於在使用附有切晶帶之接著膜X時例如藉由局部加熱使切晶帶20或基材21收縮之情形時，較佳為基材21具有熱收縮性。又，於基材21包含塑膠膜之情形時，於對切晶帶20或基材21實現各向同性之熱收縮性時，較佳為基材21為雙軸延伸膜。切晶帶20或基材21藉由在加熱溫度100℃及加熱處理時間60秒之條件下進行之加熱處理試驗所獲得之熱收縮率較佳為2～30%，更佳為2～25%，更佳為3～20%，更佳為5～20%。該熱收縮率係指所謂MD(machine direction，機械方向)方向之熱收縮率及所謂TD(transverse direction，橫向方向)方向之熱收縮率中之至少一熱收縮率。When using the adhesive film X with a dicing tape, for example, when the dicing tape 20 or the substrate 21 is shrunk by local heating, it is preferable that the substrate 21 has heat shrinkability. In addition, when the base material 21 includes a plastic film, it is preferable that the base material 21 is a biaxially stretched film when isotropic heat shrinkability is realized for the dicing tape 20 or the base material 21 . The heat shrinkage rate of the dicing tape 20 or the base material 21 obtained through a heat treatment test conducted under the conditions of a heating temperature of 100°C and a heat treatment time of 60 seconds is preferably 2-30%, more preferably 2-25% , more preferably 3-20%, more preferably 5-20%. The heat shrinkage rate refers to at least one of the heat shrinkage rate in the so-called MD (machine direction, machine direction) direction and the heat shrinkage rate in the so-called TD (transverse direction, transverse direction) direction.

基材21中之黏著劑層22側之表面可實施用以提高與黏著劑層22之密接性之物理處理、化學處理或底塗處理。作為物理處理，例如可列舉：電暈處理、電漿處理、磨砂消光加工處理、臭氧暴露處理、火焰暴露處理、高壓電擊暴露處理及離子化放射線處理。作為化學處理，例如可列舉鉻酸處理。The surface of the substrate 21 on the side of the adhesive layer 22 may be subjected to physical treatment, chemical treatment or primer treatment for improving the adhesion with the adhesive layer 22 . Examples of the physical treatment include corona treatment, plasma treatment, matte finish treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. As chemical treatment, chromic acid treatment is mentioned, for example.

就確保用以使基材21作為切晶帶20或附有切晶帶之接著膜X中之支持體發揮作用之強度的觀點而言，基材21之厚度較佳為40 μm以上，較佳為50 μm以上，更佳為55 μm以上，更佳為60 μm以上。又，就於切晶帶20或附有切晶帶之接著膜X中實現適度之可撓性之觀點而言，基材21之厚度較佳為200 μm以下，更佳為180 μm以下，更佳為150 μm以下。From the viewpoint of securing the strength for the substrate 21 to function as a support in the dicing tape 20 or the adhesive film X with the dicing tape, the thickness of the substrate 21 is preferably 40 μm or more, preferably It is 50 μm or more, more preferably 55 μm or more, more preferably 60 μm or more. Also, from the viewpoint of realizing moderate flexibility in the dicing tape 20 or the adhesive film X with the dicing tape, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 200 μm or less. Preferably, it is 150 μm or less.

切晶帶20之黏著劑層22含有黏著劑。該黏著劑可為能夠於附有切晶帶之接著膜X之使用過程中藉由來自外部之作用刻意地降低黏著力的黏著劑(黏著力降低型黏著劑)，亦可為於附有切晶帶之接著膜X之使用過程中藉由來自外部之作用，黏著力幾乎或完全不降低之黏著劑(黏著力非降低型黏著劑)。關於使用黏著力降低型黏著劑或者使用黏著力非降低型黏著劑作為黏著劑層22中之黏著劑，可根據使用附有切晶帶之接著膜X進行單片化之半導體晶片之單片化之方法或條件等、附有切晶帶之接著膜X之使用態樣適當地選擇。The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive can be an adhesive that can deliberately reduce the adhesive force (adhesion-reducing adhesive) through the action from the outside during the use of the adhesive film X with the dicing tape attached, or it can Adhesive with little or no reduction in adhesive force due to external effects during use of the adhesive film X of the crystal tape (adhesive with non-adhesive force reduction). With regard to the use of an adhesion-reducing adhesive or a non-adhesion-reducing adhesive as the adhesive in the adhesive layer 22, it can be singulated according to the use of the adhesive film X with a dicing tape attached to the semiconductor wafer for singulation. The method or conditions, etc., and the use of the adhesive film X with the dicing tape are appropriately selected.

於使用黏著力降低型黏著劑作為黏著劑層22中之黏著劑之情形時，於附有切晶帶之接著膜X之使用過程中，可將黏著劑層22表現出相對較高之黏著力之狀態與表現出相對較低之黏著力之狀態分開使用。例如於附有切晶帶之接著膜X用於下述擴張步驟時，為了抑制、防止接著膜10自黏著劑層22之***或剝離，利用黏著劑層22之高黏著力狀態，另一方面，其後，於用以自附有切晶帶之接著膜X之切晶帶20拾取附有接著膜之半導體晶片的下述拾取步驟中，為了容易自黏著劑層22拾取附有接著膜之半導體晶片，可利用黏著劑層22之低黏著力狀態。In the case of using an adhesive force-reducing adhesive as the adhesive in the adhesive layer 22, the adhesive layer 22 can exhibit a relatively high adhesive force during use of the adhesive film X with the dicing tape The state of α was used separately from the state showing relatively low adhesion. For example, when the adhesive film X with a dicing tape is used in the following expansion step, in order to suppress and prevent the adhesive film 10 from lifting or peeling off from the adhesive layer 22, the high adhesive force state of the adhesive layer 22 is used. On the other hand, , thereafter, in the following pick-up step for picking up the semiconductor wafer with the adhesive film from the dicing tape 20 of the adhesive film X with the dicing tape, in order to pick up the semiconductor wafer with the adhesive film from the adhesive layer 22 easily The semiconductor wafer can utilize the low adhesive force state of the adhesive layer 22 .

作為此種黏著力降低型黏著劑，例如可列舉於附有切晶帶之接著膜X之使用過程中可藉由放射線照射使之硬化之黏著劑(放射線硬化性黏著劑)或加熱發泡型黏著劑等。於本實施形態之黏著劑層22中，可使用一種黏著力降低型黏著劑，亦可使用兩種以上之黏著力降低型黏著劑。又，可黏著劑層22之整體由黏著力降低型黏著劑形成，亦可黏著劑層22之一部分由黏著力降低型黏著劑形成。例如於黏著劑層22具有單層構造之情形時，可黏著劑層22之整體由黏著力降低型黏著劑形成，亦可黏著劑層22中之特定之部位由黏著力降低型黏著劑形成，其他部位(例如環狀框之貼合對象區域，其處於中央區域之外側)由黏著力非降低型黏著劑形成。又，於黏著劑層22具有多層構造之情形時，可形成多層構造之所有層均由黏著力降低型黏著劑形成，亦可多層構造中之一部分層由黏著力降低型黏著劑形成。Examples of such adhesive force-reducing adhesives include adhesives that can be hardened by irradiation with radiation during use of the adhesive film X with dicing tape (radiation-curing adhesives) or heat-foaming adhesives. Adhesives etc. In the adhesive layer 22 of the present embodiment, one type of adhesive force reducing adhesive may be used, or two or more types of adhesive force reducing adhesive may be used. Moreover, the whole adhesive agent layer 22 may be formed with the adhesive force reduction type adhesive agent, and a part of the adhesive agent layer 22 may be formed with the adhesive force reduction type adhesive agent. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of an adhesive force-reducing adhesive, or a specific part of the adhesive layer 22 may be formed of an adhesive force-reducing adhesive. Other parts (for example, the bonding target area of the ring frame, which is outside the central area) are formed with non-adhesive force-reducing adhesives. Also, when the adhesive layer 22 has a multilayer structure, all the layers forming the multilayer structure may be formed of an adhesive force-reducing adhesive, or a part of the layers in the multi-layer structure may be formed of an adhesive force reducing type.

作為用於黏著劑層22之放射線硬化性黏著劑，例如可列舉藉由電子束、紫外線、α射線、β射線、γ射線或X射線之照射而硬化之類型之黏著劑，可尤佳地使用藉由紫外線照射而硬化之類型之黏著劑(紫外線硬化性黏著劑)。As the radiation-curable adhesive used for the adhesive layer 22, for example, an adhesive of the type hardened by irradiation of electron beams, ultraviolet rays, alpha rays, beta rays, gamma rays, or X-rays can be used particularly preferably. Adhesives of the type that harden by ultraviolet radiation (ultraviolet curable adhesives).

作為用於黏著劑層22之放射線硬化性黏著劑，例如可列舉添加型放射線硬化性黏著劑，其含有：作為丙烯酸系黏著劑之丙烯酸系聚合物等基質聚合物；及具有放射線聚合性之碳-碳雙鍵等官能基之放射線聚合性之單體成分或低聚物成分。As the radiation-curable adhesive used for the adhesive layer 22, for example, an additive-type radiation-curable adhesive containing: a matrix polymer such as an acrylic polymer as an acrylic adhesive; and radiation-polymerizable carbon - Radiation-polymerizable monomer components or oligomer components of functional groups such as carbon double bonds.

作為放射線硬化性黏著劑之基質聚合物之丙烯酸系聚合物較佳為以質量比率計包含最多之源自(甲基)丙烯酸酯之單體單元。作為用以形成丙烯酸系聚合物之單體單元之(甲基)丙烯酸酯、即作為丙烯酸系聚合物之構成單體之(甲基)丙烯酸酯，例如可列舉：(甲基)丙烯酸烷基酯、(甲基)丙烯酸環烷基酯及(甲基)丙烯酸芳酯。作為該(甲基)丙烯酸酯，更具體而言，可列舉作為用以形成接著膜10用丙烯酸系樹脂之丙烯酸系聚合物之構成單體於上文敍述之(甲基)丙烯酸酯。作為丙烯酸系聚合物之構成單體，可使用一種(甲基)丙烯酸酯，亦可使用兩種以上之(甲基)丙烯酸酯。作為丙烯酸系聚合物之構成單體，較佳為可列舉丙烯酸2-乙基己酯及丙烯酸月桂酯。又，於以黏著劑層22適當地表現由(甲基)丙烯酸酯所帶來之黏著性等基本特性時，丙烯酸系聚合物之構成單體整體中之(甲基)丙烯酸酯之比率較佳為40質量%以上，更佳為60質量%以上。The acrylic polymer as the matrix polymer of the radiation-curable adhesive preferably contains the most (meth)acrylate-derived monomer units in terms of mass ratio. Examples of (meth)acrylates used as monomer units for forming acrylic polymers, that is, (meth)acrylates used as monomers constituting acrylic polymers, include, for example, alkyl (meth)acrylates , Cycloalkyl (meth)acrylate and aryl (meth)acrylate. As this (meth)acrylate, the (meth)acrylate mentioned above as a constituent monomer of the acrylic polymer for forming the acrylic resin for adhesive film 10 is mentioned more specifically. As a monomer constituting the acrylic polymer, one type of (meth)acrylate may be used, or two or more types of (meth)acrylate may be used. As a monomer constituting the acrylic polymer, preferably, 2-ethylhexyl acrylate and lauryl acrylate are mentioned. In addition, when using the adhesive layer 22 to appropriately express basic characteristics such as adhesiveness brought about by (meth)acrylate, the ratio of (meth)acrylate in the entire monomer constituting the acrylic polymer is preferable. 40% by mass or more, more preferably 60% by mass or more.

例如為了其凝聚力或耐熱性之改質，丙烯酸系聚合物可於構成單體中包含能夠與(甲基)丙烯酸酯進行共聚合之一種或兩種以上之其他單體。作為此種其他單體，例如可列舉：含羧基單體、酸酐單體、含羥基單體、含環氧基單體、含磺酸基單體、含磷酸基單體、丙烯醯胺及丙烯腈。作為該其他單體，更具體而言，可列舉作為用以形成接著膜10用丙烯酸系樹脂之丙烯酸系聚合物之構成單體於上文敍述之共聚合性之其他單體。For example, in order to modify its cohesion or heat resistance, the acrylic polymer may contain one or two or more other monomers that can be copolymerized with (meth)acrylate in the constituent monomers. Examples of such other monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamides, and acrylamides. Nitrile. As this other monomer, more specifically, the copolymerizable other monomer mentioned above as a constituent monomer of the acrylic polymer for forming the acrylic resin for adhesive film 10 is mentioned.

丙烯酸系聚合物為了於其聚合物骨架中形成交聯結構，可包含源自能夠與(甲基)丙烯酸酯等單體成分進行共聚合之多官能性單體之單體單元。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、聚(甲基)丙烯酸縮水甘油酯、聚酯(甲基)丙烯酸酯及(甲基)丙烯酸胺基甲酸酯。「(甲基)丙烯酸酯」意指「丙烯酸酯」及/或「甲基丙烯酸酯」。作為丙烯酸系聚合物之構成單體，可使用一種多官能性單體，亦可使用兩種以上之多官能性單體。於以黏著劑層22適當地表現由(甲基)丙烯酸酯所帶來之黏著性等基本特性時，丙烯酸系聚合物之構成單體整體中之多官能性單體之比率較佳為40質量%以下，且較佳為30質量%以下。The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth)acrylate in order to form a crosslinked structure in the polymer skeleton. Examples of such polyfunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Acrylates, polyglycidyl(meth)acrylates, polyester(meth)acrylates and urethane(meth)acrylates. "(Meth)acrylate" means "acrylate" and/or "methacrylate". As a monomer constituting the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomer may be used. When using the adhesive layer 22 to properly express the basic properties such as the adhesiveness brought by (meth)acrylate, the ratio of the polyfunctional monomer in the monomers constituting the acrylic polymer is preferably 40% by mass. % or less, and preferably less than 30% by mass.

丙烯酸系聚合物可使用以形成其之原料單體進行聚合而獲得。作為聚合方法，例如可列舉：溶液聚合、乳化聚合、塊狀聚合及懸浮聚合。就使用切晶帶20或附有切晶帶之接著膜X之半導體裝置製造方法中之高程度之潔淨性的觀點而言，較佳為切晶帶20或附有切晶帶之接著膜X中之黏著劑層22中之低分子量成分較少，丙烯酸系聚合物之數量平均分子量較佳為10萬以上，更佳為20萬～300萬。Acrylic polymers can be obtained by polymerization using the raw material monomers used to form them. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization are mentioned, for example. From the viewpoint of high degree of cleanliness in the semiconductor device manufacturing method using the dicing tape 20 or the adhesive film X with the dicing tape, the dicing tape 20 or the adhesive film X with the dicing tape is preferable The low molecular weight components in the adhesive layer 22 are less, and the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million.

黏著劑層22或用以形成其之黏著劑為了提高丙烯酸系聚合物等基質聚合物之數量平均分子量，例如可含有外部交聯劑。作為用以與丙烯酸系聚合物等基質聚合物反應而形成交聯結構之外部交聯劑，可列舉：多異氰酸酯化合物、環氧化合物、多元醇化合物、氮丙啶化合物及三聚氰胺系交聯劑。黏著劑層22或用以形成其之黏著劑中之外部交聯劑之含量相對於基質聚合物100質量份，較佳為5質量份以下，更佳為0.1～5質量份。The adhesive layer 22 or the adhesive used to form it may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of a matrix polymer such as an acrylic polymer. Examples of the external crosslinking agent for forming a crosslinked structure by reacting with a matrix polymer such as an acrylic polymer include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive used to form it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass relative to 100 parts by mass of the matrix polymer.

作為用以形成放射線硬化性黏著劑之上述放射線聚合性單體成分，例如可列舉：三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯及1,4-丁二醇二(甲基)丙烯酸酯。作為用以形成放射線硬化性黏著劑之上述放射線聚合性低聚物成分，例如可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，分子量100～30000左右者較適當。放射線硬化性黏著劑中之放射線聚合性之單體成分或低聚物成分之總含量係於可適當地降低所形成之黏著劑層22之黏著力的範圍內確定，相對於丙烯酸系聚合物等基質聚合物100質量份，較佳為5～500質量份，更佳為40～150質量份。又，作為添加型放射線硬化性黏著劑，例如可使用日本專利特開昭60-196956號公報中所揭示者。Examples of the radiation-polymerizable monomer component used to form a radiation-curable adhesive include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(methyl) Acrylates, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate and 1,4-butanediol di(meth)acrylate. Examples of the radiation-polymerizable oligomer component used to form a radiation-curable adhesive include various types such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. For oligomers, those with a molecular weight of about 100 to 30,000 are more suitable. The total content of radiation-polymerizable monomer components or oligomer components in the radiation-curable adhesive is determined within the range that can appropriately reduce the adhesive force of the formed adhesive layer 22. Compared with acrylic polymers, etc. 100 parts by mass of the matrix polymer, preferably 5-500 parts by mass, more preferably 40-150 parts by mass. In addition, as an additive type radiation curable adhesive, for example, those disclosed in JP-A-60-196956 can be used.

作為用於黏著劑層22之放射線硬化性黏著劑，例如亦可列舉含有於聚合物側鏈、聚合物主鏈中或聚合物主鏈末端具有放射線聚合性之碳-碳雙鍵等官能基之基質聚合物之內在型放射線硬化性黏著劑。此種內在型放射線硬化性黏著劑係就抑制由所形成之黏著劑層22內之低分子量成分之轉移所引起之黏著特性之無意之經時變化的方面而言較佳。As the radiation-curable adhesive used for the adhesive layer 22, for example, one containing a functional group such as a radiation-polymerizable carbon-carbon double bond in the polymer side chain, in the polymer main chain, or at the end of the polymer main chain can be cited. Radiation curable adhesives intrinsic to the matrix polymer. Such an intrinsic radiation-curable adhesive is preferable in terms of suppressing an unintentional temporal change in adhesive properties caused by transfer of low-molecular-weight components in the formed adhesive layer 22 .

作為內在型放射線硬化性黏著劑中所含有之基質聚合物，較佳為以丙烯酸系聚合物作為基本骨架者。作為形成此種基本骨架之丙烯酸系聚合物，可採用作為添加型放射線硬化性黏著劑中所含有之基質聚合物於上文敍述之丙烯酸系聚合物。作為對丙烯酸系聚合物導入放射線聚合性之碳-碳雙鍵之方法，例如可列舉如下方法：於使包含具有特定之官能基(第1官能基)之單體之原料單體進行共聚合而獲得丙烯酸系聚合物後，於維持碳-碳雙鍵之放射線聚合性之狀態下，使具有可於與第1官能基之間產生反應而進行鍵結之特定之官能基(第2官能基)、及放射線聚合性碳-碳雙鍵之化合物與丙烯酸系聚合物進行縮合反應或加成反應。As the matrix polymer contained in the intrinsic radiation-curable adhesive, one having an acrylic polymer as the basic skeleton is preferable. As the acrylic polymer forming such a basic skeleton, the acrylic polymer described above as the matrix polymer contained in the additive type radiation-curable adhesive can be used. As a method of introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer, for example, a method of copolymerizing raw material monomers containing a monomer having a specific functional group (first functional group) After the acrylic polymer is obtained, in the state of maintaining the radiation polymerizability of the carbon-carbon double bond, it has a specific functional group (second functional group) that can react with the first functional group to bond , and radiation-polymerizable carbon-carbon double bond compounds undergo condensation or addition reactions with acrylic polymers.

作為第1官能基與第2官能基之組合，例如可列舉：羧基與環氧基、環氧基與羧基、羧基與氮丙啶基、氮丙啶基與羧基、羥基與異氰酸基、異氰酸基與羥基。於該等組合中，就容易進行反應追蹤之觀點而言，較佳為羥基與異氰酸基之組合、或異氰酸基與羥基之組合。又，製作具有反應性較高之異氰酸基之聚合物由於技術難易度較高，故而就容易製作或獲取丙烯酸系聚合物之觀點而言，更佳為丙烯酸系聚合物側之上述第1官能基為羥基且上述第2官能基為異氰酸基之情形。作為同時具有放射線聚合性碳-碳雙鍵及作為第2官能基之異氰酸基之異氰酸酯化合物、即含有放射線聚合性之不飽和官能基之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯(MOI)及間異丙烯基-α,α-二甲基苄基異氰酸酯。Examples of combinations of the first functional group and the second functional group include carboxyl and epoxy, epoxy and carboxyl, carboxyl and aziridinyl, aziridinyl and carboxyl, hydroxyl and isocyanate, Isocyanate and hydroxyl groups. Among these combinations, a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group is preferable from the viewpoint of easy reaction tracing. In addition, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, the above-mentioned first method on the side of the acrylic polymer is more preferable from the viewpoint of easy production or acquisition of the acrylic polymer. When the functional group is a hydroxyl group and the second functional group is an isocyanate group. As an isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation-polymerizable unsaturated functional group, for example: methacryl isocyanate , 2-methacryloxyethyl isocyanate (MOI) and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

用於黏著劑層22之放射線硬化性黏著劑較佳為含有光聚合起始劑。作為光聚合起始劑，例如可列舉：α-酮醇系化合物、苯乙酮系化合物、安息香醚系化合物、縮酮系化合物、芳香族磺醯氯系化合物、光活性肟系化合物、二苯甲酮系化合物、9-氧硫𠮿

Figure 112105913-001
系化合物、樟腦醌、鹵代酮、醯基膦氧化物及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基苯乙酮及2-甲基-1-[4-(甲硫基)-苯基]-2-𠰌啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香***、安息香異丙醚及大茴香偶姻甲醚。作為縮酮系化合物，例如可列舉苄基二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯。作為光活性肟系化合物，例如可列舉1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯苯甲酸及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫
Figure 112105913-001
系化合物，例如可列舉：9-氧硫
Figure 112105913-001
、2-氯9-氧硫𠮿
Figure 112105913-001
、2-甲基9-氧硫𠮿
Figure 112105913-001
、2,4-二甲基9-氧硫𠮿
Figure 112105913-001
、異丙基9-氧硫𠮿
Figure 112105913-001
、2,4-二氯9-氧硫𠮿
Figure 112105913-001
、2,4-二乙基9-氧硫𠮿
Figure 112105913-001
及2,4-二異丙基9-氧硫𠮿
Figure 112105913-001
。黏著劑層22中之放射線硬化性黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基質聚合物100質量份，例如為0.05～20質量份。The radiation curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include α-ketol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, diphenyl Methyl ketone series compounds, 9-oxosulfur 𠮿
Figure 112105913-001
Compounds, camphorquinones, halogenated ketones, acyl phosphine oxides and acyl phosphates. Examples of α-ketol compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylphenethyl Ketones, 2-methyl-2-hydroxypropiophenone and 1-hydroxycyclohexyl phenylketone. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, 2,2-diethoxybenzene Ethyl ketone and 2-methyl-1-[4-(methylthio)-phenyl]-2-metholinylpropane-1. Examples of the benzoin ether-based compound include benzoin diethyl ether, benzoin isopropyl ether, and anisoin methyl ether. As a ketal type compound, benzyl dimethyl ketal is mentioned, for example. As an aromatic sulfonyl chloride type compound, 2-naphthalenesulfonyl chloride is mentioned, for example. Examples of photoactive oxime compounds include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of the benzophenone-based compound include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. as 9-oxosulfur
Figure 112105913-001
series compounds, such as: 9-oxosulfur
Figure 112105913-001
, 2-Chloro9-oxosulfur 𠮿
Figure 112105913-001
, 2-methyl 9-oxosulfur 𠮿
Figure 112105913-001
, 2,4-Dimethyl 9-oxosulfur 𠮿
Figure 112105913-001
, Isopropyl 9-oxosulfur
Figure 112105913-001
, 2,4-dichloro-9-oxosulfur 𠮿
Figure 112105913-001
, 2,4-Diethyl 9-oxosulfur 𠮿
Figure 112105913-001
and 2,4-diisopropyl 9-oxosulfur
Figure 112105913-001
. The content of the photopolymerization initiator in the radiation curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of a matrix polymer such as an acrylic polymer.

黏著劑層22中之上述加熱發泡型黏著劑係含有藉由加熱而發泡或膨脹之成分之黏著劑。作為藉由加熱而發泡或膨脹之成分，例如可列舉發泡劑及熱膨脹性微球。The heat-foamable adhesive in the adhesive layer 22 is an adhesive containing a component that foams or expands by heating. As a component which foams or expands by heating, a foaming agent and heat-expandable microspheres are mentioned, for example.

作為加熱發泡型黏著劑用發泡劑，可列舉各種無機系發泡劑及有機系發泡劑。作為無機系發泡劑，例如可列舉：碳酸銨、碳酸氫銨、碳酸氫鈉、亞硝酸銨、硼氫化鈉及疊氮類。作為有機系發泡劑，例如可列舉：三氯單氟甲烷或二氯單氟甲烷等氯氟化烷烴；偶氮二異丁腈、偶氮二甲醯胺或偶氮二羧酸鋇等偶氮系化合物；對甲苯磺醯肼、二苯基碸-3,3'-二磺醯肼、4,4'-氧基雙(苯磺醯肼)或烯丙基雙(磺醯肼)等肼系化合物；ρ-1,2-二苯乙烯磺醯半卡肼或4,4'-氧基雙(苯磺醯半卡肼)等半卡肼系化合物；5-𠰌啉基-1,2,3,4-噻***等***系化合物；以及N,N'-二亞硝基五亞甲基四胺或N,N'-二甲基-N,N'-二亞硝基對苯二甲醯胺等N-亞硝基系化合物。Examples of the foaming agent for heat-foaming adhesives include various inorganic foaming agents and organic foaming agents. Examples of inorganic foaming agents include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of organic blowing agents include: chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodiformamide, or barium azodicarboxylate; Nitrogen compounds; p-toluenesulfonylhydrazine, diphenylsulfonyl-3,3'-disulfonylhydrazine, 4,4'-oxybis(benzenesulfonylhydrazine) or allylbis(sulfonylhydrazine), etc. Hydrazine compounds; ρ-1,2-stilbenesulfonyl semicarbazide or 4,4'-oxybis(benzenesulfonyl semicarbazide) and other semicarbazide compounds; 5-𠰌linyl-1, Triazole compounds such as 2,3,4-thiatriazole; and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N'-dinitroso N-nitroso compounds such as terephthalamide.

作為加熱發泡型黏著劑用熱膨脹性微球，例如可列舉將藉由加熱容易氣體化而膨脹之物質封入至殼內之構成之微球。作為藉由加熱容易氣體化而膨脹之物質，例如可列舉：異丁烷、丙烷及戊烷。利用凝聚法或界面聚合法等將藉由加熱容易氣體化而膨脹之物質封入至殼形成物質內，藉此可製作熱膨脹性微球。作為殼形成物質，可使用表現出熱熔融性之物質、或可藉由封入物質之熱膨脹之作用而破裂之物質。作為此種物質，例如可列舉：偏二氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯醇縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏二氯乙烯及聚碸。Examples of heat-expandable microspheres for heat-expandable adhesives include microspheres having a structure in which a substance that is easily vaporized and expanded by heating is enclosed in a shell. Examples of substances that are easily vaporized and expanded by heating include isobutane, propane, and pentane. Heat-expandable microspheres can be produced by enclosing a substance that is easily gasified and expandable by heating in a shell-forming substance by the coacervation method or the interfacial polymerization method. As the shell-forming substance, a substance exhibiting heat-fusibility, or a substance that can be broken by the action of thermal expansion of an enclosing substance can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymers, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyvinyl chloride.

作為黏著劑層22中之上述黏著力非降低型黏著劑，例如可列舉感壓性黏著劑。作為該感壓性黏著劑，例如可使用以丙烯酸系聚合物作為基質聚合物之丙烯酸系黏著劑或橡膠系黏著劑。於黏著劑層22含有丙烯酸系黏著劑作為感壓性黏著劑之情形時，作為該丙烯酸系黏著劑之基質聚合物之丙烯酸系聚合物較佳為包含源自(甲基)丙烯酸酯之單體單元作為以質量比率計最多之單體單元。作為此種丙烯酸系聚合物，例如可列舉關於放射線硬化性黏著劑於上文敍述之丙烯酸系聚合物。As the above-mentioned adhesive force non-decreasing type adhesive in the adhesive layer 22 , for example, a pressure-sensitive adhesive is exemplified. As the pressure-sensitive adhesive, for example, an acrylic adhesive or a rubber adhesive using an acrylic polymer as a matrix polymer can be used. In the case where the adhesive layer 22 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer as the matrix polymer of the acrylic adhesive preferably contains a monomer derived from (meth)acrylate The unit is regarded as the most monomer unit in terms of mass ratio. As such an acrylic polymer, the acrylic polymer mentioned above about a radiation curable adhesive agent is mentioned, for example.

作為黏著劑層22中之感壓性黏著劑，可利用關於黏著力降低型黏著劑於上文敍述之藉由放射線照射使放射線硬化性黏著劑硬化之形態之黏著劑。此種硬化過之放射線硬化類型之黏著劑即便因放射線照射而黏著力降低，根據聚合物成分之含量，亦可表現出由該聚合物成分所帶來之黏著性，可發揮能夠用於在特定之使用態樣中將被附體黏著保持之黏著力。As the pressure-sensitive adhesive in the adhesive layer 22 , an adhesive in a form in which the radiation-curable adhesive is hardened by radiation irradiation described above about the adhesive force-reducing adhesive can be used. Even if the adhesive force of this hardened radiation hardening type adhesive is reduced due to radiation exposure, it can also show the adhesiveness brought by the polymer component according to the content of the polymer component, and can be used in a specific Adhesive force that will be adhered to and maintained by the attached body in the state of use.

於本實施形態之黏著劑層22中，可使用一種黏著力非降低型黏著劑，亦可使用兩種以上之黏著力非降低型黏著劑。又，可黏著劑層22之整體由黏著力非降低型黏著劑形成，亦可黏著劑層22之一部分由黏著力非降低型黏著劑形成。例如於黏著劑層22具有單層構造之情形時，可黏著劑層22之整體由黏著力非降低型黏著劑形成，亦可黏著劑層22中之特定之部位由黏著力非降低型黏著劑形成，其他部位由黏著力降低型黏著劑形成。又，於黏著劑層22具有積層構造之情形時，可形成積層構造之所有層均由黏著力非降低型黏著劑形成，亦可積層構造中之一部分層由黏著力非降低型黏著劑形成。In the adhesive layer 22 of the present embodiment, one type of non-adhesive force-reducing adhesive may be used, or two or more types of non-adhesive force-reducing adhesives may be used. In addition, the entire adhesive layer 22 may be formed with a non-adhesive force-reducing adhesive, and a part of the adhesive layer 22 may be formed with a non-adhesive force-reducing adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entire adhesive layer 22 may be formed of a non-adhesive adhesive, or a specific part of the adhesive layer 22 may be formed of an adhesive non-decreasing. Formed, other parts are formed by adhesion-reducing adhesives. Also, when the adhesive layer 22 has a laminated structure, all the layers forming the laminated structure may be formed of non-adhesive adhesives, or some of the layers in the laminated structure may be formed of non-adhesive adhesives.

黏著劑層22或用以形成其之黏著劑除上述各成分以外，亦可含有交聯促進劑、黏著賦予劑、防老化劑或著色劑等。作為著色劑，可列舉顏料及染料。又，著色劑亦可為受到放射線照射而著色之化合物。作為此種化合物，例如可列舉隱色染料。The adhesive layer 22 or the adhesive used to form it may contain a crosslinking accelerator, an adhesion imparting agent, an anti-aging agent, a coloring agent, etc. in addition to the above-mentioned components. As a coloring agent, a pigment and a dye are mentioned. In addition, the coloring agent may be a compound that is colored by irradiation with radiation. As such a compound, a leuco dye is mentioned, for example.

黏著劑層22之厚度較佳為1～50 μm，更佳為2～30 μm，更佳為5～25 μm。此種構成例如就於黏著劑層22包含放射線硬化性黏著劑之情形時，保持該黏著劑層22對放射線硬化前後之接著膜10之接著力之平衡的方面而言較佳。The thickness of the adhesive layer 22 is preferably 1-50 μm, more preferably 2-30 μm, more preferably 5-25 μm. For example, when the adhesive layer 22 contains a radiation curable adhesive, it is preferable in terms of maintaining the balance of the adhesive force of the adhesive layer 22 to the adhesive film 10 before and after radiation curing.

具有如上所述之構成之附有切晶帶之接著膜X例如可以如下方式製造。The adhesive film X with a dicing tape having the above-mentioned structure can be produced, for example, as follows.

於附有切晶帶之接著膜X之接著膜10之製作中，首先，於製備接著膜10形成用接著劑組合物後，於特定之隔離膜上塗佈該組合物而形成接著劑組合物層。作為隔離膜，例如可列舉：聚對苯二甲酸乙二酯(PET)膜、聚乙烯膜、聚丙烯膜、以及藉由氟系剝離劑或長鏈烷基丙烯酸酯系剝離劑等剝離劑進行表面塗覆之塑膠膜或紙類等。作為接著劑組合物之塗佈方法，例如可列舉：輥式塗敷、網版塗敷及凹版塗敷。其次，對該接著劑組合物層，藉由加熱，視需要使之乾燥或視需要使之產生交聯反應。加熱溫度例如為70～160℃，加熱時間例如為1～5分鐘。以如上方式，可於伴隨有隔離膜之形態下製作上述接著膜10。In the production of the adhesive film 10 of the adhesive film X with the dicing tape, first, after preparing the adhesive composition for forming the adhesive film 10, the composition is coated on a specific separator to form the adhesive composition layer. Examples of the separator include: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film, and release agents such as fluorine-based release agents and long-chain alkyl acrylate release agents. Surface-coated plastic film or paper, etc. As a coating method of an adhesive composition, roll coating, screen coating, and gravure coating are mentioned, for example. Next, the adhesive composition layer is dried or cross-linked as necessary by heating. The heating temperature is, for example, 70 to 160° C., and the heating time is, for example, 1 to 5 minutes. In the above manner, the above-mentioned adhesive film 10 can be produced in a form accompanied by a separator.

關於附有切晶帶之接著膜X之切晶帶20，可藉由在所準備之基材21上設置黏著劑層22而製作。例如樹脂製基材21可藉由壓延製膜法、有機溶劑中之澆鑄法、或密閉系統中之吹脹擠出法、T型模頭擠出法、共擠壓法、乾式層壓法等製膜方法而製作。視需要對製膜後之膜或基材21實施特定之表面處理。於黏著劑層22之形成中，例如於製備黏著劑層形成用黏著劑組合物後，首先，將該組合物塗佈於基材21上或特定之隔離膜上而形成黏著劑組合物層。作為黏著劑組合物之塗佈方法，例如可列舉：輥式塗敷、網版塗敷及凹版塗敷。其次，對於該黏著劑組合物層，藉由加熱，視需要使之乾燥或視需要使之產生交聯反應。加熱溫度例如為80～150℃，加熱時間例如為0.5～5分鐘。於黏著劑層22形成於隔離膜上之情形時，將伴隨有該隔離膜之黏著劑層22貼合於基材21，其後，自黏著劑層22剝離隔離膜。藉此，製作具有基材21與黏著劑層22之積層構造之上述切晶帶20。The dicing tape 20 with the adhesive film X attached to the dicing tape can be produced by disposing the adhesive layer 22 on the prepared substrate 21 . For example, the resin substrate 21 can be formed by calendering, casting in an organic solvent, inflation extrusion in a closed system, T-die extrusion, co-extrusion, dry lamination, etc. Produced by film-making method. Specific surface treatment is performed on the film after film formation or the substrate 21 as needed. In forming the adhesive layer 22 , for example, after preparing an adhesive composition for forming an adhesive layer, first, the composition is applied on the substrate 21 or on a specific separator to form an adhesive composition layer. As a coating method of an adhesive composition, roll coating, screen coating, and gravure coating are mentioned, for example. Next, the adhesive composition layer is dried or cross-linked if necessary by heating. The heating temperature is, for example, 80 to 150° C., and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the separator, the adhesive layer 22 accompanied by the separator is bonded to the substrate 21 , and thereafter, the separator is peeled off from the adhesive layer 22 . Thereby, the above-mentioned dicing tape 20 having a laminated structure of the base material 21 and the adhesive layer 22 was produced.

於附有切晶帶之接著膜X之製作中，其次，於切晶帶20之黏著劑層22側例如壓接而貼合接著膜10。貼合溫度例如為30～50℃，較佳為35～45℃。貼合壓力(線壓)例如為0.1～20 kgf/cm，較佳為1～10 kgf/cm。於黏著劑層22包含如上所述之放射線硬化性黏著劑之情形時，可於該貼合之前對黏著劑層22照射紫外線等放射線，亦可於該貼合後自基材21之側對黏著劑層22照射紫外線等放射線。或者可不於附有切晶帶之接著膜X之製造過程中進行此種放射線照射(於此情形時，可於附有切晶帶之接著膜X之使用過程中使黏著劑層22放射線硬化)。於黏著劑層22具有紫外線硬化性之情形時，用以使黏著劑層22硬化之紫外線照射量例如為50～500 mJ/cm 2，較佳為100～300 mJ/cm 2。如圖1所示，附有切晶帶之接著膜X中進行作為黏著劑層22之黏著力降低措施之照射的區域(照射區域R)例如為黏著劑層22中之接著膜貼合區域內之除其周緣部以外之區域。 In the production of the adhesive film X with the dicing tape, next, the adhesive film 10 is attached to the adhesive layer 22 side of the dicing tape 20 by, for example, crimping. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the adhesive layer 22 contains the radiation-curable adhesive as described above, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or may be bonded from the side of the substrate 21 after the bonding. The agent layer 22 is irradiated with radiation such as ultraviolet rays. Alternatively, such radiation irradiation may not be performed during the manufacturing process of the adhesive film X with dicing tape (in this case, the adhesive layer 22 may be hardened by radiation during the use of the adhesive film X with dicing tape). . When the adhesive layer 22 has ultraviolet curability, the amount of ultraviolet radiation for curing the adhesive layer 22 is, for example, 50-500 mJ/cm 2 , preferably 100-300 mJ/cm 2 . As shown in FIG. 1 , the area (irradiation area R) where irradiation is performed as a measure for reducing the adhesion of the adhesive layer 22 in the adhesive film X with a dicing tape is, for example, in the area where the adhesive film is pasted in the adhesive layer 22 The area other than its peripheral part.

藉由如上方式可製作附有切晶帶之接著膜X。可於附有切晶帶之接著膜X中之接著膜10側，以至少被覆接著膜10之形態設置隔離膜(省略圖示)。於接著膜10之尺寸小於切晶帶20之黏著劑層22而於黏著劑層22中存在未與接著膜10貼合之區域之情形時，例如可以至少被覆接著膜10及黏著劑層22之形態設置隔離膜。隔離膜係用以保護接著膜10或黏著劑層22避免其露出之元件，於使用附有切晶帶之接著膜X時自該膜剝離。The adhesive film X with the dicing tape can be produced in the above manner. A spacer film (not shown) may be provided on the side of the adhesive film 10 in the adhesive film X with dicing tape so as to cover at least the adhesive film 10 . When the size of the adhesive film 10 is smaller than the adhesive layer 22 of the dicing tape 20 and there is a region in the adhesive layer 22 that is not bonded to the adhesive film 10, for example, at least the adhesive film 10 and the adhesive layer 22 can be covered. Morphology sets the isolation membrane. The isolation film is used to protect the adhesive film 10 or the adhesive layer 22 from being exposed, and is peeled off from the film when using the adhesive film X with a dicing tape.

圖2至圖4係表示使用附有切晶帶之接著膜X進行之一半導體裝置製造方法。2 to 4 show a method of manufacturing a semiconductor device using an adhesive film X with a dicing tape.

於本方法中，首先，如圖2(a)所示，於附有切晶帶之接著膜X之接著膜10上貼合半導體晶圓30。於半導體晶圓30之單面側已製作有各種半導體元件(省略圖示)，且該半導體元件所需之配線構造等(省略圖示)已形成於該單面上。於本步驟中，藉由壓接輥等將半導體晶圓30按壓於附有切晶帶之接著膜X，而使半導體晶圓30之例如背面側貼附於附有切晶帶之接著膜X之接著膜10。In this method, first, as shown in FIG. 2( a ), a semiconductor wafer 30 is bonded on the adhesive film 10 with the adhesive film X of the dicing tape. Various semiconductor elements (not shown) are formed on one side of the semiconductor wafer 30, and wiring structures and the like (not shown) necessary for the semiconductor elements are formed on the one side. In this step, the semiconductor wafer 30 is pressed against the adhesive film X with a dicing tape by a pressure roller or the like, so that, for example, the back side of the semiconductor wafer 30 is attached to the adhesive film X with a dicing tape. Then the film 10 is attached.

其次，如圖2(b)所示，對半導體晶圓30進行切晶(刀片切割步驟)。具體而言，於將半導體晶圓30保持於附有切晶帶之接著膜X之狀態下，使用切晶裝置等之旋轉刀片切削半導體晶圓30及接著膜10而單片化為半導體晶片單元(於圖中模式性地以粗實線表示切斷部位)。藉此，形成伴隨有晶片尺寸之接著膜11之半導體晶片31。Next, as shown in FIG. 2( b ), the semiconductor wafer 30 is diced (blade dicing step). Specifically, the semiconductor wafer 30 and the adhesive film 10 are cut into semiconductor wafer units by using a rotary blade such as a dicing device while the semiconductor wafer 30 is held on the adhesive film X with a dicing tape. (Cutting sites are schematically indicated by thick solid lines in the figure). Thereby, the semiconductor wafer 31 with the adhesive film 11 of a wafer size is formed.

於附有切晶帶之接著膜X中之黏著劑層22為放射線硬化性黏著劑層之情形時，可於刀片切割步驟之前或之後，自基材21之側對黏著劑層22進行作為黏著力降低措施之紫外線照射等放射線照射，以代替附有切晶帶之接著膜X之製造過程中之上述放射線照射。於放射線照射為紫外線照射之情形時，其照射量例如為50～500 mJ/cm 2，較佳為100～300 mJ/cm 2。附有切晶帶之接著膜X中進行作為黏著劑層22之黏著力降低措施之放射線照射的區域(於圖1中表示為照射區域R)例如為黏著劑層22中之接著膜貼合區域內之除其周緣部以外之區域。 In the case where the adhesive layer 22 in the adhesive film X with the dicing tape is a radiation-curable adhesive layer, the adhesive layer 22 can be adhered from the side of the substrate 21 before or after the blade cutting step. Radiation irradiation such as ultraviolet irradiation as a force reduction measure is to replace the above-mentioned radiation irradiation in the production process of the adhesive film X with dicing tape. When the radiation irradiation is ultraviolet irradiation, the irradiation dose is, for example, 50-500 mJ/cm 2 , preferably 100-300 mJ/cm 2 . The area of the adhesive film X with the dicing tape that is irradiated with radiation as a measure for reducing the adhesive force of the adhesive layer 22 (shown as the irradiated area R in FIG. 1 ) is, for example, the adhesive film bonding area in the adhesive layer 22 The inner area except its peripheral part.

進而，視需要經過使用水等清洗液清洗伴隨有附有接著膜之半導體晶片31的切晶帶20之清潔步驟後，自切晶帶20拾取附有接著膜之半導體晶片31(拾取步驟)。例如，使位於切晶帶20之圖中下側之拾取機構之銷構件(省略圖示)上升，而隔著切晶帶20將拾取對象之附有接著膜之半導體晶片31頂起後，利用吸附治具(省略圖示)進行吸附保持。Further, after cleaning the dicing tape 20 with the semiconductor wafer 31 with the adhesive film using a cleaning solution such as water as necessary, the semiconductor wafer with the adhesive film 31 is picked up from the dicing tape 20 (pick-up step). For example, the pin member (not shown) of the pick-up mechanism located on the lower side of the figure of the crystal cutting belt 20 is raised, and after the semiconductor wafer 31 with the adhesive film 31 of the pick-up object is lifted through the crystal cutting belt 20, use The adsorption jig (illustration omitted) performs adsorption and holding.

其次，如圖3(a)及圖3(b)所示，進行附有接著膜之半導體晶片31於安裝基板51上之預固著(預固著步驟)。該預固著係以安裝基板51上之半導體晶片C等嵌入至伴隨於半導體晶片31之接著膜11之方式進行。作為安裝基板51，例如可列舉：引線框架、TAB(Tape Automated Bonding，捲帶式自動接合)膜及配線基板。半導體晶片C係經由接著層52固定於安裝基板51之例如控制器晶片，配置於半導體晶片C上之半導體晶片31例如為各種記憶體晶片。半導體晶片C之電極墊(省略圖示)與安裝基板51所具有之端子部(省略圖示)經由接合線53而電性連接。作為接合線53，例如可使用金線、鋁線或銅線。於本步驟中，如此打線接合安裝之半導體晶片C及與其連接之接合線53之整體係嵌入至伴隨於半導體晶片31之接著膜11內。又，於本步驟中，為了設為半導體晶片C及接合線53容易推入至接著膜11內之狀態，可加熱接著膜11使之軟化。加熱溫度係接著膜11不會成為完全之熱硬化狀態之溫度，例如為80～140℃。Next, as shown in FIG. 3( a ) and FIG. 3( b ), preliminary fixation of the semiconductor wafer 31 with the adhesive film on the mounting substrate 51 is performed (preliminary fixation step). This pre-fixing is performed so that the semiconductor chip C etc. on the mounting substrate 51 is embedded in the adhesive film 11 accompanying the semiconductor chip 31 . Examples of the mounting substrate 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring board. The semiconductor chip C is, for example, a controller chip fixed to the mounting substrate 51 via the adhesive layer 52 , and the semiconductor chip 31 disposed on the semiconductor chip C is, for example, various memory chips. Electrode pads (not shown) of the semiconductor chip C are electrically connected to terminal portions (not shown) of the mounting substrate 51 via bonding wires 53 . As the bonding wire 53, for example, a gold wire, an aluminum wire, or a copper wire can be used. In this step, the whole of the semiconductor chip C thus mounted by wire bonding and the bonding wire 53 connected thereto is embedded in the adhesive film 11 accompanying the semiconductor chip 31 . In addition, in this step, the adhesive film 11 may be heated and softened in order to make the semiconductor chip C and the bonding wire 53 easily pushed into the adhesive film 11 . The heating temperature is a temperature at which the adhesive film 11 does not become a complete thermosetting state, and is, for example, 80 to 140°C.

其次，如圖3(c)所示，藉由加熱使接著膜11硬化(熱硬化步驟)。於本步驟中，加熱溫度例如為100～200℃，加熱時間例如為0.5～10小時。藉由經過本步驟，形成由接著膜11熱硬化而成之接著層。該接著層係將打線接合安裝於安裝基板51之半導體晶片C(第1半導體晶片)和與其連接之接合線53之整體一起包埋，並且於安裝基板51接合半導體晶片31(第2半導體晶片)者。Next, as shown in FIG. 3( c ), the adhesive film 11 is hardened by heating (thermal hardening step). In this step, the heating temperature is, for example, 100-200° C., and the heating time is, for example, 0.5-10 hours. Through this step, an adhesive layer formed by thermosetting the adhesive film 11 is formed. The adhesive layer embeds the semiconductor chip C (first semiconductor chip) mounted on the mounting substrate 51 by wire bonding and the bonding wire 53 connected thereto, and bonds the semiconductor chip 31 (second semiconductor chip) to the mounting substrate 51. By.

其次，如圖4(a)所示，半導體晶片31之電極墊(省略圖示)與安裝基板51所具有之端子部(省略圖示)經由接合線53而電性連接(打線接合步驟)。半導體晶片31之電極墊與接合線53之接線、及安裝基板51之端子部與接合線53之接線係藉由伴隨有加熱之超音波焊接而實現。打線接合中之導線加熱溫度例如為80～250℃，其加熱時間例如為數秒～數分鐘。此種打線接合步驟可於上述熱硬化步驟之前進行。Next, as shown in FIG. 4( a ), electrode pads (not shown) of the semiconductor chip 31 and terminal portions (not shown) of the mounting substrate 51 are electrically connected via bonding wires 53 (wire bonding step). The connection between the electrode pads of the semiconductor chip 31 and the bonding wire 53 , and the connection between the terminal part of the mounting substrate 51 and the bonding wire 53 are realized by ultrasonic welding accompanied by heating. The wire heating temperature in wire bonding is, for example, 80 to 250° C., and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed prior to the thermal hardening step described above.

其次，如圖4(b)所示，形成用以密封安裝基板51上之半導體晶片31等之密封樹脂54(密封步驟)。於本步驟中，例如藉由使用模具進行之轉移成形技術形成密封樹脂54。作為密封樹脂54之構成材料，例如可列舉環氧系樹脂。於本步驟中，用以形成密封樹脂54之加熱溫度例如為165～185℃，加熱時間例如為60秒～數分鐘。於在本步驟中未充分地進行密封樹脂54之硬化之情形時，於本步驟後進行用以藉由進一步之加熱處理使密封樹脂54完全硬化之後硬化步驟。於後硬化步驟中，加熱溫度例如為165～185℃，加熱時間例如為0.5～8小時。即便於在上文參照圖3(c)所敍述之步驟中接著膜11未完全熱硬化之情形時，亦可於密封步驟或後硬化步驟中，與密封樹脂54一起對接著膜11實現完全之熱硬化。Next, as shown in FIG. 4(b), a sealing resin 54 for sealing the semiconductor chip 31 and the like on the mounting substrate 51 is formed (sealing step). In this step, the sealing resin 54 is formed, for example, by a transfer molding technique using a mold. As a constituent material of the sealing resin 54, epoxy-type resin is mentioned, for example. In this step, the heating temperature for forming the sealing resin 54 is, for example, 165-185° C., and the heating time is, for example, 60 seconds to several minutes. In the case where hardening of the sealing resin 54 is not sufficiently performed in this step, a post-curing step for completely hardening the sealing resin 54 by further heat treatment is performed after this step. In the post-hardening step, the heating temperature is, for example, 165-185° C., and the heating time is, for example, 0.5-8 hours. Even when the adhesive film 11 is not completely thermally cured in the step described above with reference to FIG. heat hardening.

以如上方式，可製造多段安裝有複數個半導體晶片之半導體裝置。In the above manner, a semiconductor device mounted with a plurality of semiconductor chips in multiple stages can be manufactured.

於使用附有切晶帶之接著膜X獲得附有接著膜之半導體晶片時，可經過包括圖5至圖9所示之步驟之過程。具體而言，如下所述。When using the adhesive film X with the dicing tape to obtain the semiconductor wafer with the adhesive film, a process including the steps shown in FIGS. 5 to 9 can be passed. Specifically, as follows.

首先，如圖5(a)及圖5(b)所示，於半導體晶圓W形成分割槽30a(分割槽形成步驟)。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa之側已製作各種半導體元件(省略圖示)，且該半導體元件所需之配線構造等(省略圖示)已形成於第1面Wa上。於本步驟中，於具有黏著面T1a之晶圓加工用膠帶T1貼合於半導體晶圓W之第2面Wb側後，於半導體晶圓W保持於晶圓加工用膠帶T1之狀態下，於半導體晶圓W之第1面Wa側使用切晶裝置等之旋轉刀片形成特定深度之分割槽30a。分割槽30a係用以使半導體晶圓W分離為半導體晶片單元之空隙(於圖5至圖7中，模式性地以粗實線表示分割槽30a)。First, as shown in FIG. 5( a ) and FIG. 5( b ), dividing grooves 30 a are formed on the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are fabricated on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T1, and the On the side of the first surface Wa of the semiconductor wafer W, the dividing grooves 30 a of a predetermined depth are formed using a rotary blade such as a crystal cutting device. The dividing groove 30 a is a gap for separating the semiconductor wafer W into semiconductor wafer units (in FIGS. 5 to 7 , the dividing groove 30 a is schematically indicated by a thick solid line).

其次，如圖5(c)所示，進行具有黏著面T2a之晶圓加工用膠帶T2於半導體晶圓W之第1面Wa側之貼合、及晶圓加工用膠帶T1自半導體晶圓W之剝離。Next, as shown in FIG. 5(c), the wafer processing tape T2 having the adhesive surface T2a is attached to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is attached to the semiconductor wafer W. stripping.

其次，如圖5(d)所示，於半導體晶圓W保持於晶圓加工用膠帶T2之狀態下，將半導體晶圓W藉由自第2面Wb之研削加工進行薄化直至成為特定之厚度為止(晶圓薄化步驟)。研削加工可使用具備研削磨石之研削加工裝置進行。藉由該晶圓薄化步驟，於本實施形態中，形成可單片化為複數個半導體晶片31之半導體晶圓30A。具體而言，半導體晶圓30A具有於第2面Wb側將於該晶圓中單片化為複數個半導體晶片31之部位連結之部位(連結部)。半導體晶圓30A中之連結部之厚度、即半導體晶圓30A之第2面Wb與分割槽30a之第2面Wb側前端之間的距離例如為1～30 μm，較佳為3～20 μm。Next, as shown in FIG. 5( d ), in the state where the semiconductor wafer W is held on the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it becomes a specified thickness. thickness (wafer thinning step). Grinding can be performed using a grinding device equipped with a grinding stone. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connection portion) that connects portions of the wafer that are singulated into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end on the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, preferably 3 to 20 μm. .

其次，如圖6(a)所示，將保持於晶圓加工用膠帶T2之半導體晶圓30A貼合於附有切晶帶之接著膜X之接著膜10。其後，如圖6(b)所示，自半導體晶圓30A剝離晶圓加工用膠帶T2。於附有切晶帶之接著膜X中之黏著劑層22為放射線硬化性黏著劑層之情形時，可於半導體晶圓30A貼合於接著膜10後，自基材21之側對黏著劑層22進行作為黏著力降低措施之紫外線照射等放射線照射，以代替附有切晶帶之接著膜X之製造過程中之上述放射線照射。於放射線照射為紫外線照射之情形時，其照射量例如為50～500 mJ/cm 2，較佳為100～300 mJ/cm 2。附有切晶帶之接著膜X中進行作為黏著劑層22之黏著力降低措施之照射的區域(圖1所示之照射區域R)例如為黏著劑層22中之接著膜10貼合區域內之除其周緣部以外之區域。 Next, as shown in FIG. 6( a ), the semiconductor wafer 30A held by the tape T2 for wafer processing is bonded to the adhesive film 10 with the adhesive film X of the dicing tape. Thereafter, as shown in FIG. 6( b ), the tape T2 for wafer processing is peeled off from the semiconductor wafer 30A. In the case where the adhesive layer 22 in the adhesive film X with a dicing tape is a radiation-curable adhesive layer, after the semiconductor wafer 30A is bonded to the adhesive film 10, the adhesive can be applied from the side of the substrate 21 The layer 22 is irradiated with radiation such as ultraviolet ray irradiation as an adhesive force reducing measure instead of the above-mentioned radiation irradiation in the production process of the adhesive film X with dicing tape. When the radiation irradiation is ultraviolet irradiation, the irradiation dose is, for example, 50-500 mJ/cm 2 , preferably 100-300 mJ/cm 2 . The area (irradiation area R shown in FIG. 1 ) that is irradiated as a measure for reducing the adhesive force of the adhesive layer 22 in the adhesive film X with a dicing tape is, for example, within the bonding area of the adhesive film 10 in the adhesive layer 22 The area other than its peripheral part.

其次，於附有切晶帶之接著膜X中之接著膜10上貼附環狀框41後，如圖7(a)所示，將伴隨有半導體晶圓30A之該附有切晶帶之接著膜X固定於擴張裝置之保持器42。Next, after attaching the annular frame 41 on the adhesive film 10 in the adhesive film X with the dicing tape, as shown in FIG. Then the membrane X is fixed to the holder 42 of the expansion device.

其次，如圖7(b)所示般進行相對低溫之條件下之第1擴張步驟(冷擴張步驟)，半導體晶圓30A單片化為複數個半導體晶片31，並且附有切晶帶之接著膜X之接著膜10割斷為小片之接著膜11，獲得附有接著膜之半導體晶片31。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43係於附有切晶帶之接著膜X之圖中下側抵接於切晶帶20並上升，而將貼合有半導體晶圓30A之附有切晶帶之接著膜X之切晶帶20以使之沿包含半導體晶圓30A之徑向及圓周方向之二維方向伸展的方式進行擴張。該擴張係於使切晶帶20中例如產生15～32 MPa之拉伸應力之條件下進行。冷擴張步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，更佳為-15℃。冷擴張步驟中之擴張速度(頂起構件43上升之速度)例如為0.1～100 mm/秒。又，冷擴張步驟中之擴張量例如為3～16 mm。Next, as shown in FIG. 7(b), the first expansion step (cold expansion step) is carried out under relatively low temperature conditions, and the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the bonding of the dicing tape is attached. The adhesive film 10 of film X is cut into small pieces of adhesive film 11 to obtain a semiconductor wafer 31 with the adhesive film attached. In this step, the hollow cylinder-shaped jacking member 43 of the expansion device abuts against the crystal cutting tape 20 on the lower side of the adhesive film X attached with the crystal cutting tape in the figure and rises up, so that the semiconductor bonded The dicing tape 20 with the dicing tape adhesive film X of the wafer 30A is expanded so as to extend in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is carried out under the condition that a tensile stress of, for example, 15 to 32 MPa is generated in the dicing tape 20 . The temperature condition in the cold expansion step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed (speed at which the lifting member 43 rises) in the cold expansion step is, for example, 0.1 to 100 mm/sec. In addition, the expansion amount in the cold expansion step is, for example, 3 to 16 mm.

於本步驟中，於半導體晶圓30A中於因薄壁容易破裂之部位產生割斷而引起向半導體晶片31之單片化。與此同時，於本步驟中，於被與擴張之切晶帶20之黏著劑層22密接之接著膜10中在各半導體晶片31所密接之各區域抑制變形，另一方面，於不產生此種變形抑制作用之狀態下，切晶帶20產生之拉伸應力作用於與半導體晶片31間之分割槽對向之部位。其結果為於接著膜10中與半導體晶片31間之分割槽對向之部位被割斷。於本步驟後，如圖7(c)所示，頂起構件43下降，解除切晶帶20中之擴張狀態。In this step, the semiconductor wafer 31 is separated into pieces by cutting at a portion that is easily broken due to the thin wall in the semiconductor wafer 30A. At the same time, in this step, in the adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each area where the semiconductor wafers 31 are in close contact. In this state of deformation suppression, the tensile stress generated by the dicing tape 20 acts on the portion facing the dividing groove between the semiconductor wafers 31 . As a result, the portion of the adhesive film 10 facing the dividing groove between the semiconductor wafers 31 is cut. After this step, as shown in FIG. 7( c ), the jacking member 43 descends to release the expanded state in the crystal cutting tape 20 .

其次，如圖8(a)所示般進行相對高溫之條件下之第2擴張步驟，擴大附有接著膜之半導體晶片31間之距離(間隔距離)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43再次上升，擴張附有切晶帶之接著膜X之切晶帶20。第2擴張步驟中之溫度條件例如為10℃以上，較佳為15～30℃。第2擴張步驟中之擴張速度(頂起構件43上升之速度)例如為0.1～10 mm/秒。又，第2擴張步驟中之擴張量例如為3～16 mm。以於下述拾取步驟中可自切晶帶20適當地拾取附有接著膜之半導體晶片31之程度，於本步驟中擴大附有接著膜之半導體晶片31之間隔距離。於本步驟後，如圖8(b)所示，頂起構件43下降，解除切晶帶20中之擴張狀態。於抑制於擴張狀態解除後切晶帶20上之附有接著膜之半導體晶片31之間隔距離變窄時，較佳為於解除擴張狀態之前，對切晶帶20中之較半導體晶片31保持區域更外側之部分進行加熱使之收縮。Next, as shown in FIG. 8( a ), the second expansion step is carried out under relatively high temperature conditions to increase the distance (separation distance) between the semiconductor wafers 31 with the adhesive film. In this step, the hollow cylindrical jacking member 43 included in the expanding device rises again to expand the dicing tape 20 with the adhesive film X attached thereto. The temperature condition in the second expansion step is, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed (speed at which the jacking member 43 rises) in the second expansion step is, for example, 0.1 to 10 mm/sec. Also, the amount of expansion in the second expansion step is, for example, 3 to 16 mm. In this step, the separation distance between the semiconductor wafers 31 with the adhesive film is increased to such an extent that the semiconductor wafers 31 with the adhesive film can be properly picked up from the dicing tape 20 in the pick-up step described below. After this step, as shown in FIG. 8( b ), the jacking member 43 descends to release the expanded state in the crystal cutting tape 20 . When suppressing the distance between the semiconductor wafers 31 attached with the adhesive film on the dicing tape 20 after the expansion state is released, it is preferable to hold the area of the semiconductor wafer 31 in the dicing tape 20 before releasing the expanded state. The outer part is heated to shrink it.

其次，視需要經過使用水等清洗液清洗伴隨有附有接著膜之半導體晶片31的切晶帶20之清潔步驟後，如圖9所示，自切晶帶20拾取附有接著膜之半導體晶片31(拾取步驟)。例如，使位於切晶帶20之圖中下側之拾取機構之銷構件44上升，而隔著切晶帶20將拾取對象之附有接著膜之半導體晶片31頂起後，利用吸附治具45進行吸附保持。於拾取步驟中，銷構件44之頂起速度例如為1～100 mm/秒，銷構件44之頂起量例如為50～3000 μm。如此拾取之附有接著膜之半導體晶片31係供於半導體裝置製造過程中之安裝步驟。Next, if necessary, after cleaning the dicing belt 20 accompanied by the semiconductor wafer 31 with the adhesive film by using a cleaning solution such as water, as shown in FIG. 9 , pick up the semiconductor wafer with the adhesive film from the dicing belt 20. 31 (pickup step). For example, the pin member 44 of the pick-up mechanism located on the lower side of the drawing of the crystal cutting belt 20 is raised, and after the semiconductor wafer 31 with the adhesive film to be picked up is lifted through the crystal cutting belt 20, the suction jig 45 is used Hold by adsorption. In the pick-up step, the jacking speed of the pin member 44 is, for example, 1-100 mm/sec, and the jacking amount of the pin member 44 is, for example, 50-3000 μm. The semiconductor wafer 31 with the adhesive film thus picked up is used for the mounting step in the semiconductor device manufacturing process.

於使用附有切晶帶之接著膜X進行之半導體裝置製造方法中，可進行圖10所示之晶圓薄化步驟，以代替上文參照圖5(d)所敍述之晶圓薄化步驟。於經過上文參照圖5(c)所敍述之過程後，於圖10所示之晶圓薄化步驟中，於半導體晶圓W保持於晶圓加工用膠帶T2之狀態下，將該晶圓藉由自第2面Wb之研削加工進行薄化直至成為特定之厚度為止，形成包含複數個半導體晶片31且保持於晶圓加工用膠帶T2之半導體晶圓分割體30B。於本步驟中，可採用研削晶圓直至分割槽30a其本身露出於第2面Wb側為止之方法(第1方法)，亦可採用於自第2面Wb側到達至分割槽30a之前研削晶圓，其後，藉由自旋轉磨石向晶圓之按壓力之作用，於分割槽30a與第2面Wb之間產生裂痕而形成半導體晶圓分割體30B的方法(第2方法)。根據採用之方法，適當地確定如上文參照圖5(a)及圖5(b)所敍述般形成之分割槽30a距第1面Wa之深度。於圖10中，對經過第1方法之分割槽30a、或經過第2方法之分割槽30a及與其連接之裂痕，模式性地以粗實線表示。於獲得附有接著膜之半導體晶片31時，可將如此製作之半導體晶圓分割體30B貼合於附有切晶帶之接著膜X代替半導體晶圓30A後，參照圖7至圖9進行上述各步驟。In the semiconductor device manufacturing method using the adhesive film X with a dicing tape, the wafer thinning step shown in FIG. 10 can be performed instead of the wafer thinning step described above with reference to FIG. 5(d) . After the process described above with reference to FIG. 5(c), in the wafer thinning step shown in FIG. The semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held by the tape T2 for wafer processing is formed by thinning by grinding from the second surface Wb to a predetermined thickness. In this step, the method (first method) of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side may be adopted, or the wafer may be ground before reaching the dividing groove 30a from the second surface Wb side. Afterwards, a method of forming a semiconductor wafer divided body 30B by forming a crack between the dividing groove 30a and the second surface Wb by the action of the pressing force of the rotating grindstone on the wafer (the second method). Depending on the method adopted, the depth of the dividing groove 30a formed as described above with reference to FIG. 5(a) and FIG. 5(b) from the first surface Wa is appropriately determined. In FIG. 10, the dividing groove 30a passed through the first method, or the dividing groove 30a passed through the second method and the cracks connected thereto are schematically shown by thick solid lines. When obtaining the semiconductor wafer 31 with an adhesive film, the semiconductor wafer split body 30B produced in this way can be attached to the adhesive film X with a dicing tape instead of the semiconductor wafer 30A, and the above can be carried out with reference to FIGS. 7 to 9 each step.

圖11(a)及圖11(b)具體地表示將半導體晶圓分割體30B貼合於附有切晶帶之接著膜X後進行之第1擴張步驟(冷擴張步驟)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43係於附有切晶帶之接著膜X之圖中下側與切晶帶20抵接並上升，而將貼合有半導體晶圓分割體30B之附有切晶帶之接著膜X之切晶帶20以使之沿包含半導體晶圓分割體30B之徑向及圓周方向之二維方向伸展的方式進行擴張。該擴張係於使切晶帶20中例如產生1～100 MPa之拉伸應力之條件下進行。本步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，更佳為-15℃。本步驟中之擴張速度(頂起構件43上升之速度)例如為1～500 mm/秒。又，本步驟中之擴張量例如為50～200 mm。藉由此種冷擴張步驟，附有切晶帶之接著膜X之接著膜10被割斷為小片之接著膜11而獲得附有接著膜之半導體晶片31。具體而言，於本步驟中，於與被擴張之切晶帶20之黏著劑層22密接之接著膜10中，在半導體晶圓分割體30B之各半導體晶片31所密接之各區域抑制變形，另一方面，於不產生此種變形抑制作用之狀態下，切晶帶20產生之拉伸應力作用於與半導體晶片31間之分割槽30a對向之部位。其結果為於接著膜10中與半導體晶片31間之分割槽30a對向之部位被割斷。如此獲得之附有接著膜之半導體晶片31係於經過上文參照圖9所敍述之拾取步驟後，供於半導體裝置製造過程中之安裝步驟。11( a ) and FIG. 11( b ) specifically show the first expanding step (cold expanding step) performed after bonding the semiconductor wafer divided body 30B to the adhesive film X with a dicing tape. In this step, the hollow cylinder-shaped jacking member 43 of the expansion device contacts and lifts up the cutting tape 20 on the lower side of the adhesive film X with the cutting tape attached thereto, and the semiconductor tape attached thereto will be bonded. The dicing tape 20 with the adhesive film X of the dicing tape 30B of the divided wafer 30B is expanded so as to extend in the two-dimensional direction including the radial direction and the circumferential direction of the divided semiconductor wafer 30B. The expansion is carried out under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20 . The temperature condition in this step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed in this step (the speed at which the jacking member 43 rises) is, for example, 1 to 500 mm/sec. Also, the expansion amount in this step is, for example, 50 to 200 mm. Through this cold expansion step, the adhesive film 10 with the adhesive film X attached with the dicing tape is cut into small pieces of the adhesive film 11 to obtain the semiconductor wafer 31 with the adhesive film. Specifically, in this step, in the adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region where the semiconductor wafers 31 of the semiconductor wafer split body 30B are in close contact, On the other hand, the tensile stress generated by the dicing tape 20 acts on the portion facing the dividing groove 30 a between the semiconductor wafers 31 in a state where such a deformation suppressing effect does not occur. As a result, the portion of the adhesive film 10 facing the dividing groove 30 a between the semiconductor wafers 31 is cut. The thus obtained semiconductor wafer 31 with an adhesive film is used for the mounting step in the semiconductor device manufacturing process after the picking-up step described above with reference to FIG. 9 .

於使用附有切晶帶之接著膜X進行之半導體裝置製造方法中，可將以如下方式製作之半導體晶圓30C貼合於附有切晶帶之接著膜X以代替半導體晶圓30、半導體晶圓30A或半導體晶圓分割體30B。In the method of manufacturing a semiconductor device using the adhesive film X with a dicing tape, the semiconductor wafer 30C produced in the following manner can be bonded to the adhesive film X with a dicing tape instead of the semiconductor wafer 30, the semiconductor Wafer 30A or semiconductor wafer split body 30B.

於半導體晶圓30C之製作中，首先，如圖12(a)及圖12(b)所示，於半導體晶圓W形成改質區域30b。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa之側已製作有各種半導體元件(省略圖示)，且該半導體元件所需之配線構造等(省略圖示)已形成於第1面Wa上。於本步驟中，將具有黏著面T3a之晶圓加工用膠帶T3貼合於半導體晶圓W之第1面Wa側後，於半導體晶圓W保持於晶圓加工用膠帶T3之狀態下，自與晶圓加工用膠帶T3相反之側對半導體晶圓W沿其分割預定線照射使聚光點對準晶圓內部之雷射光，利用由多光子吸收所引起之剝蝕而於半導體晶圓W內形成改質區域30b。改質區域30b係用以將半導體晶圓W分離為半導體晶片單元之脆化區域。關於在半導體晶圓中藉由雷射光照射於分割預定線上形成改質區域30b之方法，例如於日本專利特開2002-192370號公報中有詳細敍述。於該方法中，本實施形態中之雷射光照射條件例如於以下之條件之範圍內適當地調整。In manufacturing the semiconductor wafer 30C, first, as shown in FIG. 12( a ) and FIG. 12( b ), a modified region 30 b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are fabricated on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) necessary for the semiconductor elements are formed on the first surface Wa. In this step, after affixing the wafer processing tape T3 having the adhesive surface T3a to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held on the wafer processing tape T3, and then automatically The side opposite to the tape T3 for wafer processing irradiates the semiconductor wafer W along its planned dividing line with laser light that aligns the focused point with the inside of the wafer, and utilizes the ablation caused by multi-photon absorption to destroy the inside of the semiconductor wafer W. A modified region 30b is formed. The modified region 30b is an embrittled region used to separate the semiconductor wafer W into semiconductor wafer units. The method of forming the modified region 30b on the semiconductor wafer by irradiating laser light on the planned dividing line is described in detail in Japanese Patent Application Laid-Open No. 2002-192370, for example. In this method, the laser light irradiation conditions in this embodiment are adjusted appropriately within the range of the following conditions, for example.

雷射光照射條件 (A)雷射光 雷射光源                半導體雷射激發Nd：YAG(Neodymium-doped Yttrium Aluminium Garnet，摻釹釔鋁石榴石)雷射 波長                      1064 nm 雷射光點截面面積   3.14×10 -8cm 2振盪形態               Q開關脈衝 重複頻率               100 kHz以下 脈衝寬度               1 μs以下 輸出                      1 mJ以下 雷射光品質            TEM00 偏光特性               直線偏光 (B)聚光用透鏡 倍率                                                    100倍以下 NA(Numerical Aperture，數值孔徑)        0.55 對雷射光波長之透過率                           100%以下 (C)載置半導體基板之載置台之移動速度   280 mm/秒以下 Laser light irradiation conditions (A) Laser light Laser light source Semiconductor laser excitation Nd:YAG (Neodymium-doped Yttrium Aluminum Garnet, neodymium-doped Yttrium Aluminum Garnet) laser wavelength 1064 nm laser spot cross-sectional area 3.14×10 -8 cm 2 Oscillation form Q-switching pulse repetition frequency 100 kHz or less Pulse width 1 μs or less Output 1 mJ or less Laser light quality TEM00 Polarization characteristics The transmittance of the emitted light wavelength is 100% or less (C) The moving speed of the stage on which the semiconductor substrate is placed is 280 mm/s or less

其次，於半導體晶圓W保持於晶圓加工用膠帶T3之狀態下，將半導體晶圓W藉由自第2面Wb之研削加工進行薄化直至成為特定之厚度為止，如圖12(c)所示，形成能夠單片化為複數個半導體晶片31之半導體晶圓30C(晶圓薄化步驟)。於獲得附有接著膜之半導體晶片31時，可將以如上方式製作之半導體晶圓30C貼合於附有切晶帶之接著膜X代替半導體晶圓30A後，參照圖7至圖9進行上述各步驟。Next, in the state where the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it becomes a specific thickness, as shown in FIG. 12(c) As shown, a semiconductor wafer 30C capable of being singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step). When obtaining the semiconductor wafer 31 with an adhesive film, the semiconductor wafer 30C produced in the above manner can be bonded to the adhesive film X with a dicing tape instead of the semiconductor wafer 30A, and the above-mentioned process can be carried out with reference to FIGS. 7 to 9 each step.

圖13(a)及圖13(b)具體地表示將半導體晶圓30C貼合於附有切晶帶之接著膜X後進行之第1擴張步驟(冷擴張步驟)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43係於附有切晶帶之接著膜X之圖中下側與切晶帶20抵接並上升，而將貼合有半導體晶圓30C之附有切晶帶之接著膜X之切晶帶20以使之沿包含半導體晶圓30C之徑向及圓周方向之二維方向伸展的方式進行擴張。該擴張係於使切晶帶20中例如產生1～100 MPa之拉伸應力之條件下進行。本步驟中之溫度條件例如為0℃以下，較佳為-20～-5℃，更佳為-15～-5℃，更佳為-15℃。本步驟中之擴張速度(頂起構件43上升之速度)例如為1～500 mm/秒。又，本步驟中之擴張量例如為50～200 mm。藉由此種冷擴張步驟，附有切晶帶之接著膜X之接著膜10被割斷為小片之接著膜11而獲得附有接著膜之半導體晶片31。具體而言，於本步驟中，於半導體晶圓30C中在脆性之改質區域30b形成裂痕而引起向半導體晶片31之單片化。與此同時，於本步驟中，於與被擴張之切晶帶20之黏著劑層22密接之接著膜10中，在半導體晶圓30C之各半導體晶片31所密接之各區域抑制變形，另一方面，於不產生此種變形抑制作用之狀態下，切晶帶20產生之拉伸應力作用於與晶圓之裂痕形成部位對向之部位。其結果為於接著膜10中與半導體晶片31間之裂痕形成部位對向之部位被割斷。如此獲得之附有接著膜之半導體晶片31於經過上文參照圖9所敍述之拾取步驟後，供於半導體裝置製造過程中之安裝步驟。13(a) and 13(b) specifically show the first expansion step (cold expansion step) performed after bonding the semiconductor wafer 30C to the adhesive film X with a dicing tape. In this step, the hollow cylinder-shaped jacking member 43 of the expansion device contacts and lifts up the cutting tape 20 on the lower side of the adhesive film X with the cutting tape attached thereto, and the semiconductor tape attached thereto will be bonded. The dicing tape 20 with the dicing tape-attached adhesive film X of the wafer 30C is expanded so as to extend in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30C. The expansion is carried out under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20 . The temperature condition in this step is, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C, more preferably -15°C. The expansion speed in this step (the speed at which the jacking member 43 rises) is, for example, 1 to 500 mm/sec. Also, the expansion amount in this step is, for example, 50 to 200 mm. Through this cold expansion step, the adhesive film 10 with the adhesive film X attached with the dicing tape is cut into small pieces of the adhesive film 11 to obtain the semiconductor wafer 31 with the adhesive film. Specifically, in this step, cracks are formed in the brittle modified region 30 b in the semiconductor wafer 30C, thereby causing the semiconductor wafer 31 to be separated into pieces. At the same time, in this step, in the adhesive film 10 that is in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each area where the semiconductor wafers 31 of the semiconductor wafer 30C are in close contact, and the other On the other hand, in the state where such a deformation suppressing effect does not occur, the tensile stress generated by the dicing tape 20 acts on the portion facing the crack formation portion of the wafer. As a result, the portion of the adhesive film 10 facing the crack formation portion between the semiconductor wafers 31 is cut. The semiconductor wafer 31 with the adhesive film obtained in this way is used for the mounting step in the semiconductor device manufacturing process after the picking-up step described above with reference to FIG. 9 .

於圖4(b)所示之上述半導體裝置中，半導體晶片C和與其連接之接合線53之整體嵌入至由接著膜11硬化而成之接著層內。相對於此，亦可使半導體晶片C和與其連接之接合線53中之半導體晶片C側之一部分嵌入至由接著膜11硬化而成之接著層內。於製造此種構成之半導體裝置時，亦可使用附有切晶帶之接著膜X。In the above-mentioned semiconductor device shown in FIG. 4( b ), the entirety of the semiconductor chip C and the bonding wire 53 connected thereto is embedded in the adhesive layer formed by hardening the adhesive film 11 . On the other hand, part of the semiconductor wafer C side among the semiconductor wafer C and the bonding wire 53 connected thereto may be embedded in the adhesive layer formed by hardening the adhesive film 11 . When manufacturing a semiconductor device with such a configuration, the adhesive film X with a dicing tape can also be used.

於製造目標之半導體裝置中，如圖14所示，例如可採用覆晶安裝之半導體晶片C代替打線接合安裝之半導體晶片C。圖14所示之半導體晶片C經由凸塊55而與安裝基板51電性連接，於該半導體晶片C與安裝基板51之間填充底部填充劑56進行熱硬化。於圖14所示之半導體裝置中，由接著膜11熱硬化而成之接著層包埋覆晶安裝於安裝基板51之半導體晶片C(第1半導體晶片)，並且於安裝基板51接合半導體晶片31(第2半導體晶片)。於製造此種構成之半導體裝置時，亦可使用附有切晶帶之接著膜X。In the semiconductor device to be manufactured, as shown in FIG. 14 , for example, a flip chip mounted semiconductor chip C may be used instead of a wire bond mounted semiconductor chip C. The semiconductor chip C shown in FIG. 14 is electrically connected to the mounting substrate 51 through bumps 55 , and an underfill 56 is filled between the semiconductor chip C and the mounting substrate 51 to be thermally cured. In the semiconductor device shown in FIG. 14 , the adhesive layer formed by thermosetting the adhesive film 11 embeds the semiconductor chip C (first semiconductor chip) flip-chip mounted on the mounting substrate 51 , and bonds the semiconductor chip 31 to the mounting substrate 51 (Second semiconductor wafer). When manufacturing a semiconductor device with such a configuration, the adhesive film X with a dicing tape can also be used.

於上述半導體裝置製造方法中，可於上文參照圖3(a)及圖3(b)所敍述之預固著步驟、或上文參照圖3(c)所敍述之熱硬化步驟後，將特定之數量之附有接著層之半導體晶片依序黏晶並積層於半導體晶片31上，將包含半導體晶片31之各半導體晶片之電極墊與安裝基板51所具有之端子部之間打線接合，其後，進行用以將安裝基板51上之所有半導體晶片等進行樹脂密封之密封步驟。將經過此種過程製造之半導體裝置之一例示於圖15。In the above semiconductor device manufacturing method, after the pre-fixing step described above with reference to FIG. 3(a) and FIG. 3(b), or the thermal hardening step described above with reference to FIG. 3(c), the A specific number of semiconductor chips with an adhesive layer are bonded and stacked on the semiconductor chip 31 in sequence, and the electrode pads of each semiconductor chip including the semiconductor chip 31 are bonded to the terminal portion of the mounting substrate 51 by wire bonding. Thereafter, a sealing step for resin-sealing all the semiconductor chips and the like on the mounting substrate 51 is performed. An example of a semiconductor device manufactured through such a process is shown in FIG. 15 .

於圖15所示之半導體裝置中，半導體晶片C包埋於介於安裝基板51與半導體晶片31之間之由接著膜11硬化而成之接著層內，另一方面，於半導體晶片31上多段積層複數個半導體晶片31'。半導體晶片31、31'之電極墊(省略圖示)與安裝基板51所具有之端子部(省略圖示)經由接合線53而電性連接。密封樹脂54係密封安裝基板51上之半導體晶片31、31'等。於製造此種構成之半導體裝置時，亦可使用附有切晶帶之接著膜X。In the semiconductor device shown in FIG. 15 , the semiconductor chip C is embedded in the adhesive layer formed by hardening the adhesive film 11 between the mounting substrate 51 and the semiconductor chip 31 . A plurality of semiconductor wafers 31' are stacked. Electrode pads (not shown) of the semiconductor chips 31 and 31 ′ are electrically connected to terminal portions (not shown) of the mounting substrate 51 via bonding wires 53 . The sealing resin 54 seals the semiconductor chips 31 , 31 ′ and the like on the mounting substrate 51 . When manufacturing a semiconductor device with such a configuration, the adhesive film X with a dicing tape can also be used.

於圖15所示之半導體裝置中，例如如圖16所示，可採用覆晶安裝之半導體晶片C代替打線接合安裝之半導體晶片C。於製造此種構成之半導體裝置時，亦可使用附有切晶帶之接著膜X。In the semiconductor device shown in FIG. 15, for example, as shown in FIG. 16, a flip-chip mounted semiconductor chip C may be used instead of a wire bonding mounted semiconductor chip C. When manufacturing a semiconductor device with such a configuration, the adhesive film X with a dicing tape can also be used.

本發明者等人發現：例如採用可於製造如上所述之半導體裝置時使用之附有切晶帶之接著膜X中之接著膜10，於在初始夾頭間距離10 mm、125℃及拉伸速度1 mm/秒之條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中具有破斷強度10 MPa以上及/或破斷伸長率60%以上之耐破斷性的上述構成即便於接著膜10相對較厚之情形時，亦適於抑制由其形成之接著層中由熱應力所引起之龜裂之產生。例如如以下述實施例及比較例所示。The inventors of the present invention have found that, for example, using the adhesive film 10 in the adhesive film X with a dicing tape that can be used in the manufacture of the above-mentioned semiconductor device, the distance between the initial chucks is 10 mm, 125 ° C and pulled. Under the condition of elongation speed of 1 mm/s, it has a breaking strength of 10 MPa or more and/or a breaking elongation of 60% or more in the tensile test of a hardened adhesive film test piece with a width of 5 mm The above configuration is suitable for suppressing the generation of cracks caused by thermal stress in the adhesive layer formed therefrom even when the adhesive film 10 is relatively thick. For example, as shown in the following Examples and Comparative Examples.

認為接著膜10中之對寬度5 mm之硬化後之接著膜試片進行之上述拉伸試驗中之破斷強度為10 MPa以上、較佳為13 MPa以上、更佳為16 MPa以上、更佳為19 MPa以上、更佳為22 MPa以上的上述構成適於抵抗於硬化後之接著膜10、即接著層中因熱應力之作用而產生、累積於內部之應變而抑制龜裂之形成。It is considered that the breaking strength of the adhesive film 10 in the above-mentioned tensile test performed on the adhesive film test piece after curing with a width of 5 mm is 10 MPa or more, preferably 13 MPa or more, more preferably 16 MPa or more, and more preferably 16 MPa or more. The above structure of 19 MPa or more, more preferably 22 MPa or more is suitable for suppressing the formation of cracks against the internal strain generated by thermal stress in the adhesive film 10 after hardening, that is, the adhesive layer.

認為接著膜10中之對寬度5 mm之硬化後之接著膜試片進行之上述拉伸試驗中之破斷伸長率為60%以上、較佳為65%以上、更佳為70%以上、更佳為75%以上的上述構成適於抑制硬化後之接著膜10、即接著層中由熱應力之作用所引起之內部應變。於接著層中，內部應變量越少，則越不易產生龜裂。It is considered that the elongation at break of the adhesive film 10 in the above-mentioned tensile test performed on the adhesive film test piece with a width of 5 mm after hardening is 60% or more, preferably 65% or more, more preferably 70% or more, and more preferably 60% or more. Preferably, the above composition of 75% or more is suitable for suppressing the internal strain caused by the action of thermal stress in the adhesive film 10 after hardening, that is, the adhesive layer. In the adhesive layer, the smaller the amount of internal strain, the less prone to cracks.

如上所述，附有切晶帶之接著膜X中之接著膜10適於抑制由其形成之接著層中由熱應力所引起之龜裂之產生。As described above, the adhesive film 10 in the adhesive film X with dicing tape is suitable for suppressing the generation of cracks caused by thermal stress in the adhesive layer formed therefrom.

接著膜10於初始夾頭間距離22.5 mm、頻率1 Hz、動態應變±0.5 μm及升溫速度10℃/分鐘之條件下對寬度5 mm之硬化後之接著膜試片進行測定所獲得之125℃下之拉伸儲存彈性模數係如上所述，較佳為40 MPa以上，更佳為50 MPa以上，更佳為60 MPa以上。此種構成係就抑制由接著膜10形成之接著層中由熱應力所引起之龜裂之產生的方面而言較佳。Adhesive film 10 is 125°C obtained by measuring a hardened adhesive film test piece with a width of 5 mm under the conditions of an initial distance between chucks of 22.5 mm, a frequency of 1 Hz, a dynamic strain of ±0.5 μm, and a heating rate of 10°C/min. The tensile storage elastic modulus below is as described above, and is preferably at least 40 MPa, more preferably at least 50 MPa, more preferably at least 60 MPa. Such a configuration is preferable in terms of suppressing the generation of cracks caused by thermal stress in the adhesive layer formed from the adhesive film 10 .

接著膜10之厚度係如上所述，較佳為40 μm以上，更佳為60 μm以上，更佳為80 μm以上。此種構成係就使用接著膜10作為半導體晶片包埋用接著膜之方面而言較佳。The thickness of the subsequent film 10 is as described above, preferably not less than 40 μm, more preferably not less than 60 μm, more preferably not less than 80 μm. Such a configuration is preferable in terms of using the adhesive film 10 as an adhesive film for semiconductor wafer embedding.

接著膜10之厚度係如上所述，較佳為150 μm以下，更佳為140 μm以下，更佳為130 μm以下。此種構成係就於以接著膜10與切晶帶20之黏著劑層22側密接之形態供於如上所述之割斷用擴張步驟之情形時實現該接著膜10之良好之割斷的方面而言較佳。The thickness of the subsequent film 10 is as described above, preferably not more than 150 μm, more preferably not more than 140 μm, more preferably not more than 130 μm. Such a configuration is in terms of achieving good cutting of the adhesive film 10 when the adhesive film 10 is in close contact with the adhesive layer 22 side of the dicing tape 20 in the above-mentioned expanding step for cutting. better.

接著膜10於未硬化狀態下之120℃下之黏度係如上所述，較佳為300 Pa・s以上，更佳為700 Pa・s以上，更佳為1000 Pa・s以上。接著膜10於未硬化狀態下之120℃下之黏度較佳為5000 Pa・s以下，更佳為4500 Pa・s以下，更佳為4000 Pa・s以下。與接著膜10於未硬化狀態下之黏度或軟質度相關之該等構成係就使用接著膜10作為半導體晶片包埋用接著膜之方面而言較佳。 [實施例] The viscosity of the subsequent film 10 at 120° C. in an uncured state is as described above, preferably 300 Pa·s or higher, more preferably 700 Pa·s or higher, more preferably 1000 Pa·s or higher. The viscosity of the next film 10 at 120° C. in an uncured state is preferably not more than 5000 Pa·s, more preferably not more than 4500 Pa·s, more preferably not more than 4000 Pa·s. These configurations related to the viscosity and softness of the adhesive film 10 in an uncured state are preferable in terms of using the adhesive film 10 as an adhesive film for semiconductor wafer embedding. [Example]

[實施例1] ＜接著膜之製作＞ 將丙烯酸系樹脂A 1(商品名「Teisanresin SG-708-6」，重量平均分子量為70萬，玻璃轉移溫度Tg為4℃，長瀨化成股份有限公司製造)100質量份、環氧樹脂E 1(商品名「EPPN 501HY」，日本化藥股份有限公司製造)144質量份、酚樹脂F 1(商品名「LVR8210-DL」，群榮化學工業股份有限公司製造)89質量份、無機填料(商品名「SE-2050MCV」，二氧化矽粒子，平均粒徑為0.5 μm，Admatechs股份有限公司製造)222質量份、矽烷偶合劑(商品名「KBM-303」，信越化學股份有限公司製造)1.4質量份及硬化觸媒(商品名「TPP-K」，北興化學股份有限公司製造)0.25質量份加入至甲基乙基酮中加以混合，獲得接著劑組合物。其次，於具有經實施聚矽氧脫模處理之面之PET隔離膜(厚度38 μm)之聚矽氧脫模處理面上使用敷料器塗佈接著劑組合物而形成接著劑組合物層。其次，對該組合物層於130℃下進行2分鐘之加熱乾燥，於PET隔離膜上製作厚度40 μm之接著膜。進而，使用覆膜機貼合如此製作之3片接著膜，製作實施例1之接著膜(厚度120 μm)。於該貼合中，將貼合速度設為10 mm/秒，將溫度條件設為60℃，將壓力條件設為0.15 MPa。將實施例1以及下述各實施例及各比較例中之接著膜之組成揭示於表1(於表1中，表示接著膜之組成之各數值之單位為該組成內之相對之「質量份」)。 [Example 1] <Preparation of Adhesive Film> Acrylic resin A 1 (trade name "Teisanresin SG-708-6", with a weight average molecular weight of 700,000 and a glass transition temperature Tg of 4°C was produced by Nagase Chemical Co., Ltd. Manufactured) 100 parts by mass, epoxy resin E 1 (trade name "EPPN 501HY", manufactured by Nippon Kayaku Co., Ltd.) 144 parts by mass, phenol resin F 1 (trade name "LVR8210-DL", Qunyei Chemical Industry Co., Ltd. manufactured by the company) 89 parts by mass, inorganic filler (trade name "SE-2050MCV", silica particles, average particle size 0.5 μm, manufactured by Admatechs Co., Ltd.) 222 parts by mass, silane coupling agent (trade name "KBM-303 ", manufactured by Shin-Etsu Chemical Co., Ltd.) and 0.25 parts by mass of hardening catalyst (trade name "TPP-K", manufactured by Hokko Chemical Co., Ltd.) were added to methyl ethyl ketone and mixed to obtain an adhesive combination thing. Next, the adhesive composition was applied on the silicone release-treated surface of the PET release film (thickness 38 μm) having the silicone release-treated surface with an applicator to form an adhesive composition layer. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and an adhesive film with a thickness of 40 μm was formed on the PET separator. Furthermore, the three adhesive films produced in this way were bonded together using a laminator, and the adhesive film (thickness 120 micrometers) of Example 1 was produced. In this bonding, the bonding speed was set to 10 mm/sec, the temperature conditions were set to 60° C., and the pressure conditions were set to 0.15 MPa. The composition of the adhesive film in Example 1 and the following examples and comparative examples is disclosed in Table 1 (in Table 1, the unit of each numerical value representing the composition of the adhesive film is the relative "parts by mass" in the composition ").

＜切晶帶之製作＞ 於具備冷卻管、氮氣導入管、溫度計及攪拌裝置之反應容器內，將包含丙烯酸2-乙基己酯86.4質量份、丙烯酸2-羥基乙酯13.6質量份、作為聚合起始劑之過氧化苯甲醯0.2質量份、及作為聚合溶劑之甲苯65質量份之混合物於61℃下於氮氣氛圍下攪拌6小時(聚合反應)。藉此，獲得含有丙烯酸系聚合物P 1之聚合物溶液。其次，將包含該含有丙烯酸系聚合物P 1之聚合物溶液、異氰酸2-甲基丙烯醯氧基乙酯(MOI)、及作為加成反應觸媒之二丁基二月桂酸錫之混合物於50℃下於空氣氛圍下攪拌48小時(加成反應)。於該反應溶液中，MOI之調配量相對於上述丙烯酸系聚合物P 1100質量份為14.6質量份，二丁基二月桂酸錫之調配量相對於丙烯酸系聚合物P 1100質量份為0.5質量份。藉由該加成反應，獲得含有側鏈具有甲基丙烯酸基之丙烯酸系聚合物P 2之聚合物溶液。其次，於該聚合物溶液中，相對於丙烯酸系聚合物P 2100質量份加入2質量份之多異氰酸酯化合物(商品名「Coronate L」，東曹股份有限公司製造)及5質量份之光聚合起始劑(商品名「Irgacure 651」，BASF公司製造)加以混合，獲得黏著劑組合物。其次，於具有經實施聚矽氧脫模處理之面之PET隔離膜(厚度38 μm)之聚矽氧脫模處理面上使用敷料器塗佈黏著劑組合物而形成黏著劑組合物層。其次，對該組合物層於120℃下進行2分鐘之加熱乾燥，於PET隔離膜上形成厚度10 μm之黏著劑層。其次，使用貼合機，於室溫下於該黏著劑層之露出面貼合乙烯-乙酸乙烯酯共聚物(EVA)制基材(商品名「Funcrare NRB#115」，厚度115 μm，Gunze股份有限公司製造)。以如上方式製作切晶帶。 <Preparation of dicing tape> In a reaction vessel equipped with a cooling pipe, a nitrogen gas introduction pipe, a thermometer and a stirring device, 86.4 parts by mass of 2-ethylhexyl acrylate and 13.6 parts by mass of 2-hydroxyethyl acrylate were prepared as a polymer A mixture of 0.2 parts by mass of benzoyl peroxide as an initiator and 65 parts by mass of toluene as a polymerization solvent was stirred at 61° C. under a nitrogen atmosphere for 6 hours (polymerization reaction). Thereby, a polymer solution containing the acrylic polymer P1 was obtained. Next, the polymer solution containing the acrylic polymer P1 , 2-methacryloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst The mixture was stirred at 50°C under air atmosphere for 48 hours (addition reaction). In this reaction solution, the compounded amount of MOI was 14.6 parts by mass relative to 100 parts by mass of the above-mentioned acrylic polymer P1 , and the compounded amount of dibutyltin dilaurate was 0.5 parts by mass relative to 100 parts by mass of the acrylic polymer P1 . parts by mass. By this addition reaction, the polymer solution containing the acrylic polymer P2 which has a methacrylic group in a side chain was obtained. Next, to this polymer solution, 2 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Corporation) and 5 parts by mass of photopolymerizable An initiator (trade name "Irgacure 651", manufactured by BASF Corporation) was mixed to obtain an adhesive composition. Next, an adhesive composition layer was formed by applying an adhesive composition on the silicone release-treated surface of a PET release film (thickness 38 μm) having a silicone release-treated surface using an applicator. Next, the composition layer was heated and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm on the PET separator. Next, use a laminating machine to bond an ethylene-vinyl acetate copolymer (EVA) substrate (trade name "Funcrare NRB#115", thickness 115 μm, Gunze Co., Ltd. on the exposed surface of the adhesive layer at room temperature Ltd.). Crystal cutting tapes were produced in the above manner.

＜附有切晶帶之接著膜之製作＞ 將伴隨有PET隔離膜之實施例1之上述接著膜沖切加工為直徑330 mm之圓盤形狀。其次，自該接著膜剝離PET隔離膜，且自上述切晶帶剝離PET隔離膜後，使用覆膜機貼合該切晶帶中露出之黏著劑層與接著膜中因PET隔離膜之剝離而露出之面。於該貼合中，將貼合速度設為10 mm/秒，將溫度條件設為40℃，將壓力條件設為0.15 MPa。其次，以切晶帶之中心與接著膜之中心一致之方式，將如此與接著膜貼合之切晶帶沖切加工為直徑390 mm之圓盤形狀。其次，自EVA基材之側對切晶帶中之黏著劑層照射紫外線。於紫外線照射中，使用高壓水銀燈，將照射累計光量設為400 mJ/cm 2。以如上方式，製作具有包含切晶帶及接著膜之積層構造之實施例1之附有切晶帶之接著膜。 <Fabrication of Adhesive Film with Cutting Tape> The above-mentioned adhesive film of Example 1 with a PET separator was die-cut into a disc shape with a diameter of 330 mm. Next, after peeling off the PET separator from the bonding film, and peeling off the PET separator from the above-mentioned dicing tape, use a laminating machine to bond the adhesive layer exposed in the dicing tape to the bonded layer in the bonding film due to the peeling of the PET separator. exposed face. In this bonding, the bonding speed was set to 10 mm/sec, the temperature conditions were set to 40° C., and the pressure conditions were set to 0.15 MPa. Next, in such a way that the center of the dicing tape is consistent with the center of the adhesive film, the dicing tape bonded to the adhesive film is die-cut into a disc shape with a diameter of 390 mm. Next, irradiate ultraviolet rays to the adhesive layer in the dicing tape from the side of the EVA substrate. In ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative light intensity of irradiation was set to 400 mJ/cm 2 . In the above manner, the adhesive film with a dicing tape of Example 1 having a laminated structure including a dicing tape and an adhesive film was fabricated.

[實施例2] 使用環氧樹脂E 2(商品名「KI-3000-4」，新日鐵住金化學股份有限公司製造)59質量份及環氧樹脂E 3(商品名「YL-980」，三菱化學股份有限公司製造)54質量份代替環氧樹脂E 1144質量份，使用酚樹脂F 2(商品名「MEH-7851SS」，明和化成股份有限公司製造)121質量份代替酚樹脂F 189質量份，且將硬化觸媒(商品名「TPP-K」，北興化學股份有限公司製造)之調配量設為0.5質量份代替0.25質量份，除此以外，以與實施例1之接著膜相同之方式，製作實施例2之接著膜(厚度120 μm)。又，使用該實施例2之接著膜代替實施例1之上述接著膜，除此以外，以與實施例1之附有切晶帶之接著膜相同之方式，製作實施例2之附有切晶帶之接著膜。 [Example 2] 59 parts by mass of epoxy resin E 2 (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd.) and epoxy resin E 3 (trade name "YL-980") were used, Mitsubishi Chemical Co., Ltd.) 54 parts by mass instead of epoxy resin E 1 144 parts by mass, 121 parts by mass of phenol resin F 2 (trade name "MEH-7851SS", manufactured by Meiwa Chemical Co., Ltd.) instead of phenol resin F 1 89 parts by mass, and the blending amount of the hardening catalyst (trade name "TPP-K", manufactured by Beixing Chemical Co., Ltd.) is set to 0.5 parts by mass instead of 0.25 parts by mass. In addition, it is the same as the adhesive film of Example 1 In the same manner, the adhesive film of Example 2 (thickness 120 μm) was produced. Also, the adhesive film of Example 2 was used instead of the above-mentioned adhesive film of Example 1, and in the same manner as the adhesive film with a dicing tape of Example 1, the dicing tape of Example 2 was produced. With adhesive film.

[實施例3] 使用丙烯酸系樹脂A 2(商品名「Teisanresin SG-P3」，重量平均分子量為85萬，玻璃轉移溫度Tg為12℃，長瀨化成股份有限公司製造)100質量份代替丙烯酸系樹脂A 1100質量份，除此以外，以與實施例1之接著膜相同之方式，製作實施例3之接著膜(厚度120 μm)。又，使用該實施例3之接著膜代替實施例1之上述接著膜，除此以外，以與實施例1之附有切晶帶之接著膜相同之方式，製作實施例3之附有切晶帶之接著膜。 [Example 3] 100 parts by mass of acrylic resin A2 (trade name "Teisanresin SG-P3", weight average molecular weight of 850,000, glass transition temperature Tg of 12°C, manufactured by Nagase Chemical Co., Ltd.) was used instead of acrylic resin The adhesive film of Example 3 (thickness 120 micrometers) was produced in the same manner as the adhesive film of Example 1 except that resin A1 was 100 mass parts. In addition, the adhesive film of Example 3 was used instead of the above-mentioned adhesive film of Example 1, and in the same manner as the adhesive film with a dicing tape of Example 1, the dicing tape of Example 3 was produced. With adhesive film.

[比較例1] 將丙烯酸系樹脂A 3(商品名「Teisanresin SG-70L」，重量平均分子量為90萬，玻璃轉移溫度Tg為-13℃，長瀨化成股份有限公司製造)100質量份、環氧樹脂E 2(商品名「KI-3000-4」，新日鐵住金化學股份有限公司製造)102質量份、環氧樹脂E 3(商品名「YL-980」，三菱化學股份有限公司製造)13質量份、酚樹脂F 2(商品名「MEH-7851SS」，明和化成股份有限公司製造)119質量份、無機填料(商品名「SE-2050MCV」，二氧化矽粒子，平均粒徑為0.5 μm、Admatechs股份有限公司製造)222質量份、矽烷偶合劑(商品名「KBM-303」，信越化學股份有限公司製造)1.4質量份及硬化觸媒(商品名「TPP-K」，北興化學股份有限公司製造)0.67質量份加入至甲基乙基酮中加以混合，獲得接著劑組合物。其次，於具有經實施聚矽氧脫模處理之面之PET隔離膜(厚度38 μm)之聚矽氧脫模處理面上使用敷料器塗佈接著劑組合物而形成接著劑組合物層。其次，對該組合物層於130℃下進行2分鐘之加熱乾燥，於PET隔離膜上製作厚度40 μm之接著膜。進而，使用覆膜機貼合如此製作之3片接著膜，製作比較例1之接著膜(厚度120 μm)。於該貼合中，將貼合速度設為10 mm/秒，將溫度條件設為60℃，將壓力條件設為0.15 MPa。又，使用該比較例1之接著膜代替實施例1之上述接著膜，除此以外，以與實施例1之附有切晶帶之接著膜相同之方式，製作比較例1之附有切晶帶之接著膜。 [Comparative Example 1] 100 parts by mass of acrylic resin A3 (trade name "Teisanresin SG-70L", weight average molecular weight of 900,000, glass transition temperature Tg of -13°C, manufactured by Nagase Chemical Co., Ltd.) 102 parts by mass of epoxy resin E 2 (trade name "KI-3000-4", manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.), epoxy resin E 3 (trade name "YL-980", manufactured by Mitsubishi Chemical Corporation) 13 parts by mass, phenol resin F 2 (trade name "MEH-7851SS", manufactured by Meiwa Chemical Co., Ltd.), 119 parts by mass, inorganic filler (trade name "SE-2050MCV", silica particles, average particle diameter 0.5 μm , Admatechs Co., Ltd.) 222 parts by mass, silane coupling agent (trade name "KBM-303", manufactured by Shin-Etsu Chemical Co., Ltd.) 1.4 parts by mass, and hardening catalyst (trade name "TPP-K", Beixing Chemical Co., Ltd. Company product) 0.67 parts by mass were added to methyl ethyl ketone and mixed to obtain an adhesive composition. Next, the adhesive composition was applied on the silicone release-treated surface of the PET release film (thickness 38 μm) having the silicone release-treated surface with an applicator to form an adhesive composition layer. Next, the composition layer was heated and dried at 130° C. for 2 minutes, and an adhesive film with a thickness of 40 μm was formed on the PET separator. Furthermore, the three adhesive films produced in this way were bonded together using a laminator, and the adhesive film (120 micrometers in thickness) of the comparative example 1 was produced. In this bonding, the bonding speed was set to 10 mm/sec, the temperature conditions were set to 60° C., and the pressure conditions were set to 0.15 MPa. In addition, the adhesive film of Comparative Example 1 was used instead of the above-mentioned adhesive film of Example 1, and in the same manner as the adhesive film with dicing tape of Example 1, the dicing tape of Comparative Example 1 was produced. With adhesive film.

[比較例2] 將環氧樹脂E 2之調配量設為105質量份代替102質量份，將環氧樹脂E 3之調配量設為41質量份代替13質量份，將酚樹脂F 2之調配量設為154質量份代替119質量份，且將硬化觸媒(商品名「TPP-K」，北興化學股份有限公司製造)之調配量設為0.8質量份代替0.67質量份，除此以外，以與比較例1之接著膜相同之方式，製作比較例2之接著膜(厚度120 μm)。又，使用該比較例2之接著膜代替實施例1之上述接著膜，除此以外，以與實施例1之附有切晶帶之接著膜相同之方式，製作比較例2之附有切晶帶之接著膜。 [Comparative Example 2] The compounding amount of epoxy resin E2 was set as 105 parts by mass instead of 102 parts by mass, the compounding amount of epoxy resin E3 was set as 41 parts by mass instead of 13 parts by mass, and the compounding amount of phenolic resin F2 was The amount was set at 154 parts by mass instead of 119 parts by mass, and the blending amount of the hardening catalyst (trade name "TPP-K", manufactured by Beixing Chemical Co., Ltd.) was set at 0.8 parts by mass instead of 0.67 parts by mass. In the same manner as the adhesive film of Comparative Example 1, the adhesive film of Comparative Example 2 (thickness: 120 μm) was produced. In addition, the adhesive film of Comparative Example 2 was used instead of the above-mentioned adhesive film of Example 1, and in the same manner as the adhesive film with dicing tape of Example 1, the dicing tape of Comparative Example 2 was produced. With adhesive film.

[比較例3] 使用丙烯酸系樹脂A 3(商品名「Teisanresin SG-70L」，長瀨化成股份有限公司製造)100質量份代替丙烯酸系樹脂A 1100質量份，且將硬化觸媒(商品名「TPP-K」，北興化學股份有限公司製造)之調配量設為0.1質量份代替0.25質量份，除此以外，以與實施例1之接著膜相同之方式，製作比較例3之接著膜(厚度120 μm)。又，使用該比較例3之接著膜代替實施例1之上述接著膜，除此以外，以與實施例1之附有切晶帶之接著膜相同之方式，製作比較例3之附有切晶帶之接著膜。 [Comparative Example 3] 100 parts by mass of acrylic resin A 3 (trade name "Teisanresin SG-70L", manufactured by Nagase Chemical Co., Ltd.) was used instead of 100 parts by mass of acrylic resin A 1 , and a hardening catalyst (trade name "TPP-K", manufactured by Beixing Chemical Co., Ltd.) was set at 0.1 parts by mass instead of 0.25 parts by mass. In addition, the adhesive film of Comparative Example 3 was produced in the same manner as the adhesive film of Example 1 ( Thickness 120 μm). Also, the adhesive film of Comparative Example 3 was used instead of the above-mentioned adhesive film of Example 1, and in the same manner as the adhesive film with a dicing tape of Example 1, the dicing tape of Comparative Example 3 was produced. With adhesive film.

＜硬化後之破斷強度及破斷伸長率＞ 對實施例1～3及比較例1～3之各接著膜，藉由150℃下之1小時之加熱、及其後之175℃下之1小時之加熱使之硬化。進而，對自硬化後之接著膜切割出之各接著膜試片(長度40 mm、寬度5 mm、厚度120 μm)，使用動態黏彈性測定裝置(商品名「RSA-III」，TA Instruments製造)進行拉伸試驗，測定破斷強度及破斷伸長率。於該拉伸試驗中，測定模式為拉伸模式，初始夾頭間距離為10 mm，溫度條件為125℃，拉伸速度為1 mm/秒。將測得之破斷強度(MPa)及破斷伸長率(%)之各值揭示於表1。 <Break strength and elongation at break after hardening> Each adhesive film of Examples 1-3 and Comparative Examples 1-3 was hardened by heating at 150 degreeC for 1 hour, and then heating at 175 degreeC for 1 hour. Furthermore, a dynamic viscoelasticity measurement device (trade name "RSA-III", manufactured by TA Instruments) was used for each adhesive film test piece (length 40 mm, width 5 mm, thickness 120 μm) cut out from the adhesive film after curing. A tensile test was performed to measure the breaking strength and breaking elongation. In this tensile test, the measurement mode was the tensile mode, the initial distance between chucks was 10 mm, the temperature condition was 125° C., and the tensile speed was 1 mm/sec. Table 1 shows the values of the measured breaking strength (MPa) and breaking elongation (%).

＜硬化後之拉伸儲存彈性模數＞ 對實施例1～3及比較例1～3之各接著膜，藉由150℃下之1小時之加熱、及其後之175℃下之1小時之加熱使之硬化。進而，對自硬化後之接著膜切割出之各接著膜試片(長度40 mm、寬度5 mm、厚度120 μm)，使用動態黏彈性測定裝置(商品名「RSA-III」，TA Instruments製造)進行拉伸試驗，測定拉伸儲存彈性模數。於該拉伸試驗中，測定模式為拉伸模式，初始夾頭間距離為22.5 mm，測定溫度範圍為0℃至150℃，升溫速度為10℃/分鐘，動態應變為±0.5 μm，頻率為1 Hz。將求出之125℃下之拉伸儲存彈性模數(MPa)揭示於表1。 ＜Tensile storage modulus after hardening＞ Each adhesive film of Examples 1-3 and Comparative Examples 1-3 was hardened by heating at 150 degreeC for 1 hour, and then heating at 175 degreeC for 1 hour. Furthermore, a dynamic viscoelasticity measurement device (trade name "RSA-III", manufactured by TA Instruments) was used for each adhesive film test piece (length 40 mm, width 5 mm, thickness 120 μm) cut out from the adhesive film after curing. A tensile test was performed to measure the tensile storage elastic modulus. In this tensile test, the measurement mode is tensile mode, the initial distance between chucks is 22.5 mm, the measurement temperature range is 0°C to 150°C, the heating rate is 10°C/min, the dynamic strain is ±0.5 μm, and the frequency is 1 Hz. Table 1 shows the tensile storage elastic modulus (MPa) at 125°C obtained.

＜硬化前之黏度＞ 對實施例1～3及比較例1～3之上述各接著膜測定未硬化狀態下之120℃下之黏度。具體而言，將自接著膜採集之0.1 g之試樣添加至作為測定板之平行板(直徑20 mm)，使用流變儀(商品名「MARS3」，HAAKE公司製造)，藉由平行板法測定該試樣之熔融黏度(Pa・s)。於本測定中，平行板間之間隙為0.1 mm，應變速度為5/秒，升溫速度為10℃/分鐘，測定溫度範圍為90～150℃。將測定結果揭示於表1。 ＜Viscosity before hardening＞ The viscosity at 120° C. in an uncured state was measured for each of the above adhesive films of Examples 1 to 3 and Comparative Examples 1 to 3. Specifically, 0.1 g of a sample collected from the adhesive film was added to a parallel plate (20 mm in diameter) as a measurement plate, and a rheometer (trade name "MARS3", manufactured by HAAKE Co., Ltd.) was used to measure Measure the melt viscosity (Pa·s) of the sample. In this measurement, the gap between parallel plates is 0.1 mm, the strain rate is 5/sec, the heating rate is 10°C/min, and the measurement temperature range is 90-150°C. The measurement results are shown in Table 1.

[溫度循環試驗] 使用實施例1～3及比較例1～3之各附有切晶帶之接著膜而獲得附有接著膜之半導體晶片後，對將該半導體晶片黏晶於基板所獲得之接合體樣本進行溫度循環試驗。 [Temperature cycle test] After using the adhesive films with dicing tapes of Examples 1-3 and Comparative Examples 1-3 to obtain semiconductor wafers with adhesive films, the temperature of the bonded body samples obtained by bonding the semiconductor wafers to the substrate Cycle test.

供於溫度循環試驗之各樣本係以如下方式製作。首先，於附有切晶帶之接著膜之接著膜(厚度120 μm)側貼合矽晶圓(直徑12英吋，厚度60 μm)。其次，藉由使用切晶裝置(商品名「DFD6260」，DISCO股份有限公司製造)進行之刀片切割，將附有切晶帶之接著膜上之矽晶圓與接著膜一起切削，單片化為附有接著膜之晶片(10 mm見方)。其次，對有機基板黏晶該附有接著膜之半導體晶片。具體而言，將附有接著膜之晶片於其接著膜側預固著於有機基板後，使介於有機基板與晶片之間之接著膜硬化而形成接著層。於預固著中，加熱溫度設為120℃，壓接負載設為1 kg，壓接時間設為1秒。於使接著膜硬化時，加壓力設為7 kg/cm 2，加熱溫度設為150℃，加熱時間設為1小時。其次，藉由密封樹脂將半導體晶片密封於有機基板上。具體而言，以將半導體晶片包埋於有機基板上之方式供給密封樹脂(商品名「GE-100」，日立化成股份有限公司製造)後，對該密封樹脂於175℃下加熱90秒，繼而，於175℃下加熱5小時。以如上方式，使用各附有切晶帶之接著膜製作溫度循環試驗用接合體樣本。 Each sample for the temperature cycle test was prepared in the following manner. First, attach a silicon wafer (12 inches in diameter, 60 μm in thickness) to the side of the adhesive film (thickness 120 μm) of the adhesive film with dicing tape. Next, the silicon wafer on the adhesive film with the dicing tape is cut together with the adhesive film by blade dicing using a crystal cutting device (trade name "DFD6260", manufactured by DISCO Co., Ltd.) Wafer with adhesive film (10 mm square). Secondly, bonding the semiconductor wafer with the adhesive film on the organic substrate. Specifically, after pre-fixing the wafer with the adhesive film on the adhesive film side to the organic substrate, the adhesive film interposed between the organic substrate and the wafer is cured to form an adhesive layer. In the pre-fixation, the heating temperature was set to 120° C., the crimping load was set to 1 kg, and the crimping time was set to 1 second. When hardening the adhesive film, the applied pressure was set to 7 kg/cm 2 , the heating temperature was set to 150° C., and the heating time was set to 1 hour. Secondly, the semiconductor chip is sealed on the organic substrate by sealing resin. Specifically, after supplying a sealing resin (trade name "GE-100", manufactured by Hitachi Chemical Co., Ltd.) so as to embed a semiconductor chip on an organic substrate, the sealing resin was heated at 175° C. for 90 seconds, and then , heated at 175°C for 5 hours. In the above manner, the bonding body samples for the temperature cycle test were produced using the adhesive films with the dicing tapes attached.

溫度循環試驗係使用溫度循環試驗機(商品名「TSA-103ES」，ESPEC股份有限公司製造)進行，對各樣本，賦予700個循環之-55℃～125℃之範圍內之溫度變化。1個循環之溫度分佈包含-55℃下之5分鐘之保持時間及125℃下之5分鐘之保持時間。The temperature cycle test was performed using a temperature cycle tester (trade name "TSA-103ES", manufactured by ESPEC Co., Ltd.), and a temperature change in the range of -55°C to 125°C was given to each sample for 700 cycles. The temperature profile for 1 cycle included a hold time of 5 minutes at -55°C and a hold time of 5 minutes at 125°C.

於溫度循環試驗後，藉由機械研磨，對接合體樣本自基板側進行水平研磨，使接合體樣本中之接著層之基板側表面露出。進而，觀察所露出之接著層表面。於該觀察中，將於接著層完全不產生龜裂之情形評價為優，將於接著層產生龜裂之情形評價為不佳。將其評價結果揭示於表1。After the temperature cycle test, the bonded body sample was horizontally ground from the substrate side by mechanical grinding, so that the surface of the substrate side of the adhesive layer in the bonded body sample was exposed. Furthermore, the exposed surface of the adhesive layer was observed. In this observation, the case where no cracks occurred in the adhesive layer was evaluated as excellent, and the case where cracks occurred in the adhesive layer was evaluated as poor. The evaluation results are shown in Table 1.

使用實施例1～3之附有切晶帶之接著膜所製作之接合體樣本係於經過上述溫度循環試驗後，於其接著層未產生龜裂。另一方面，使用比較例1～3之附有切晶帶之接著膜所製作之接合體樣本係於經過上述溫度循環試驗後，於其接著層產生龜裂。The joint samples produced by using the adhesive film with the dicing tape in Examples 1-3 were subjected to the above-mentioned temperature cycle test, and no cracks occurred in the adhesive layer. On the other hand, the bonded samples produced using the adhesive film with dicing tapes of Comparative Examples 1-3 had cracks in the adhesive layer after the above temperature cycle test.

[表1] 實施例1 實施例2 實施例3 比較例1 比較例2 比較例3 丙烯酸系樹脂A 1(Teisanresin SG-708-6) 100 100 - - - - 丙烯酸系樹脂A 2(Teisanresin SG-P3) - - 100 - - - 丙烯酸系樹脂A 3(Teisanresin SG-70L) - - - 100 100 100 環氧樹脂E 1(EPPN 501HY) 144 - 144 - - 144 環氧樹脂E 2(KI-3000-4) - 59 - 102 105 - 環氧樹脂E 3(YL-980) - 54 - 13 41 - 酚樹脂F 1(LVR8210-DL) 89 - 89 - - 89 酚樹脂F 2(MEH-7851SS) - 121 - 119 154 - 無機填料(SE-2050MCV，二氧化矽粒子) 222 222 222 222 222 222 矽烷偶合劑(KBM-303) 1.4 1.4 1.4 1.4 1.4 1.4 硬化觸媒(TPP-K) 0.25 0.5 0.25 0.67 0.8 0.1 破斷強度(MPa) 18 6 23 6 8 9 破斷伸長率(%) 13 75 17 31 19 20 硬化後之125℃下之拉伸儲存彈性模數(MPa) 612 54 773 459 334 466 120℃下之黏度(Pa・s) 3400 3200 4500 2600 2300 2800 溫度循環試驗中之評價 優 優 優 不佳 不佳 不佳 [Table 1] Example 1 Example 2 Example 3 Comparative example 1 Comparative example 2 Comparative example 3 Acrylic resin A 1 (Teisanresin SG-708-6) 100 100 - - - - Acrylic resin A 2 (Teisanresin SG-P3) - - 100 - - - Acrylic resin A 3 (Teisanresin SG-70L) - - - 100 100 100 Epoxy resin E 1 (EPPN 501HY) 144 - 144 - - 144 Epoxy resin E 2 (KI-3000-4) - 59 - 102 105 - Epoxy resin E 3 (YL-980) - 54 - 13 41 - Phenolic resin F 1 (LVR8210-DL) 89 - 89 - - 89 Phenolic resin F 2 (MEH-7851SS) - 121 - 119 154 - Inorganic filler (SE-2050MCV, silica particles) 222 222 222 222 222 222 Silane coupling agent (KBM-303) 1.4 1.4 1.4 1.4 1.4 1.4 Hardening catalyst (TPP-K) 0.25 0.5 0.25 0.67 0.8 0.1 Breaking strength (MPa) 18 6 twenty three 6 8 9 Elongation at break (%) 13 75 17 31 19 20 Tensile storage elastic modulus at 125°C after hardening (MPa) 612 54 773 459 334 466 Viscosity at 120°C (Pa・s) 3400 3200 4500 2600 2300 2800 Evaluation in temperature cycle test excellent excellent excellent bad bad bad

10:接著膜 11:接著膜 20:切晶帶 21:基材 22:黏著劑層 22a:黏著面 30:半導體晶圓 30A:半導體晶圓 30B:半導體晶圓分割體 30C:半導體晶圓 30a:分割槽 30b:改質區域 31:半導體晶片 31':半導體晶片 41:環狀框 42:保持器 43:頂起構件 44:銷構件 45:吸附治具 51:安裝基板 52:接著層 53:接合線 54:密封樹脂 55:凸塊 56:底部填充劑 C:半導體晶片 R:照射區域 T1:晶圓加工用膠帶 T1a:黏著面 T2:晶圓加工用膠帶 T2a:黏著面 T3:晶圓加工用膠帶 T3a:黏著面 W:半導體晶圓 Wa:第1面 Wb:第2面 X:附有切晶帶之接著膜 10: Then film 11: Then film 20: Cut crystal belt 21: Substrate 22: Adhesive layer 22a: Adhesive surface 30: Semiconductor wafer 30A: Semiconductor wafer 30B:Semiconductor Wafer Divider 30C: Semiconductor wafer 30a: split groove 30b: modified area 31: Semiconductor wafer 31': semiconductor wafer 41: ring frame 42: Retainer 43: jacking up components 44: Pin member 45: Adsorption fixture 51:Installing the substrate 52: Next layer 53: Bonding wire 54: sealing resin 55: Bump 56: Underfill C: semiconductor wafer R: irradiation area T1: Tape for wafer processing T1a: Adhesive surface T2: Tape for wafer processing T2a: Adhesive surface T3: Tape for wafer processing T3a: Adhesive surface W: semiconductor wafer Wa: side 1 Wb: side 2 X: Adhesive film with dicing tape

圖1係本發明之一實施形態之附有切晶帶之接著膜的剖面模式圖。 圖2(a)、(b)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖3(a)～(c)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖4(a)、(b)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖5(a)～(d)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖6(a)、(b)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖7(a)～(c)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖8(a)、(b)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖9係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖10係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖11(a)、(b)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖12(a)～(c)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖13(a)、(b)係表示使用圖1所示之附有切晶帶之接著膜之半導體裝置製造方法中的一部分步驟。 圖14係表示使用圖1所示之附有切晶帶之接著膜所製造之半導體裝置的一例。 圖15係表示使用圖1所示之附有切晶帶之接著膜所製造之半導體裝置的一例。 圖16係表示使用圖1所示之附有切晶帶之接著膜所製造之半導體裝置的一例。 Fig. 1 is a schematic cross-sectional view of an adhesive film with a dicing tape according to an embodiment of the present invention. 2(a) and (b) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 3( a ) to ( c ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 4( a ), ( b ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 5( a ) to ( d ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 6( a ), ( b ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 7( a ) to ( c ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 8( a ), ( b ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . FIG. 9 shows some steps in the method of manufacturing a semiconductor device using the adhesive film with dicing tape shown in FIG. 1 . FIG. 10 shows some steps in the method of manufacturing a semiconductor device using the adhesive film with dicing tape shown in FIG. 1 . 11( a ) and ( b ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 12( a ) to ( c ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . 13( a ), ( b ) show some steps in the semiconductor device manufacturing method using the adhesive film with dicing tape shown in FIG. 1 . FIG. 14 shows an example of a semiconductor device manufactured using the adhesive film with dicing tape shown in FIG. 1 . FIG. 15 shows an example of a semiconductor device manufactured using the adhesive film with dicing tape shown in FIG. 1 . FIG. 16 shows an example of a semiconductor device manufactured using the adhesive film with dicing tape shown in FIG. 1 .

10:接著膜 10: Then film

20:切晶帶 20: Cut crystal belt

21:基材 21: Substrate

22:黏著劑層 22: Adhesive layer

22a:黏著面 22a: Adhesive surface

R:照射區域 R: irradiation area

X:附有切晶帶之接著膜 X: Adhesive film with dicing tape

Claims (10)

一種黏晶用接著膜，其於在初始夾頭間距離10 mm、125℃及拉伸速度1 mm/秒之條件下對寬度5 mm之硬化後之接著膜試片進行之拉伸試驗中，具有破斷強度10 MPa以上及/或破斷伸長率60%以上之耐破斷性。An adhesive film for die bonding, in the tensile test of a hardened adhesive film test piece with a width of 5 mm under the conditions of an initial chuck distance of 10 mm, 125°C and a tensile speed of 1 mm/s, It has a breaking strength of more than 10 MPa and/or a breaking elongation of more than 60%. 如請求項1之黏晶用接著膜，其中於初始夾頭間距離22.5 mm、頻率1 Hz、動態應變±0.5 μm及升溫速度10℃/分鐘之條件下對寬度5 mm之硬化後之接著膜試片進行測定所獲得之125℃下之拉伸儲存彈性模數為40 MPa以上。Such as the adhesive film for die bonding in claim 1, wherein the adhesive film with a width of 5 mm is hardened under the conditions of the initial distance between the chucks of 22.5 mm, the frequency of 1 Hz, the dynamic strain of ±0.5 μm, and the heating rate of 10°C/min. The tensile storage elastic modulus obtained by measuring the test piece at 125°C is above 40 MPa. 如請求項1之黏晶用接著膜，其具有40～150 μm之厚度。The adhesive film for die bonding according to claim 1, which has a thickness of 40-150 μm. 如請求項2之黏晶用接著膜，其具有40～150 μm之厚度。The adhesive film for die bonding according to claim 2, which has a thickness of 40-150 μm. 如請求項1之黏晶用接著膜，其於120℃下之黏度為300～5000 Pa・s。For example, the adhesive film for die bonding in claim 1 has a viscosity of 300-5000 Pa·s at 120°C. 如請求項2之黏晶用接著膜，其於120℃下之黏度為300～5000 Pa・s。For example, the adhesive film for die bonding in claim 2 has a viscosity of 300-5000 Pa·s at 120°C. 如請求項3之黏晶用接著膜，其於120℃下之黏度為300～5000 Pa・s。For example, the adhesive film for die bonding in claim 3 has a viscosity of 300-5000 Pa·s at 120°C. 如請求項1至7中任一項之黏晶用接著膜，其能夠形成將打線接合安裝於安裝基板之第1半導體晶片與連接於該第1半導體晶片之接合線之整體或一部分一起包埋、並且於上述安裝基板接合第2半導體晶片之接著層。The adhesive film for die bonding according to any one of claims 1 to 7, which can form a first semiconductor chip mounted on a mounting substrate by wire bonding and embed the whole or part of the bonding wire connected to the first semiconductor chip together , and bond the adhesive layer of the second semiconductor chip to the above-mentioned mounting substrate. 如請求項1至7中任一項之黏晶用接著膜，其能夠形成包埋覆晶安裝於安裝基板之第1半導體晶片、並且於上述安裝基板接合第2半導體晶片之接著層。The adhesive film for die bonding according to any one of claims 1 to 7, which can form an adhesive layer that embeds a first semiconductor chip that is flip-chip mounted on a mounting substrate and bonds a second semiconductor chip to the mounting substrate. 一種附有切晶帶之黏晶用接著膜，其具備：切晶帶，其具有包含基材及黏著劑層之積層構造；及 如請求項1至9中任一項之黏晶用接著膜，其係與上述切晶帶中之上述黏著劑層可剝離地密接。 An adhesive film for die bonding with a dicing tape, comprising: a dicing tape having a laminated structure including a base material and an adhesive layer; and The adhesive film for die bonding according to any one of Claims 1 to 9, which is closely bonded to the above-mentioned adhesive layer in the above-mentioned dicing tape in a detachable manner.
TW112105913A 2017-12-14 2018-12-14 Adhesive film and adhesive film with dicing tape TW202323475A (en)

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